Semiconductor processing apparatus and temperature control method for a dielectric window

Abstract

The application discloses a temperature control method for a semiconductor process equipment and a dielectric window. The semiconductor process equipment comprises a reaction chamber, a dielectric window, a nozzle and a control system. The dielectric window is arranged at the top of the reaction chamber, and the nozzle penetrates through the dielectric window. The dielectric window comprises a first temperature control layer and a second temperature control layer which are arranged in a stack from top to bottom. The first temperature control layer comprises a heat exchange flow channel arranged in the first temperature control layer. The heat exchange flow channel is provided with heat exchange medium. The control system is configured to adjust the temperature of the heat exchange medium to control the temperature of the first temperature control layer. The second temperature control layer comprises a plurality of ring belt areas which are arranged along the radial direction and surround the nozzle. Each ring belt area is provided with a temperature measuring device and a heater. The temperature measuring device is used to detect the temperature of the corresponding ring belt area. The control system is configured to adjust the temperature of the heater according to the detection data of the temperature measuring device to control the temperature of the corresponding ring belt area. The above scheme can realize uniform temperature control of the dielectric window.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a method for temperature control of semiconductor process equipment and dielectric window. Background Technology

[0002] In semiconductor manufacturing, plasma etching is a process that requires the application of plasma etching technology. Plasma etching refers to the technology of forming plasma containing various active particles through glow discharge. The surface of the wafer to be etched comes into contact with the active particles and reacts to form volatile gaseous products that are then removed, thereby completing the pattern transfer.

[0003] During the manufacturing process, process byproduct particles easily adhere to the bottom of the dielectric window in the reaction chamber. This affects wafer quality and shortens the lifespan of the dielectric window. Particle control within the dielectric window is closely related to its temperature uniformity; therefore, uniform temperature control of the dielectric window is necessary to reduce particle adhesion. However, current semiconductor process equipment can only detect localized temperatures (e.g., edge temperatures) of the dielectric window, and temperature control at different locations within the window varies, making it difficult to achieve uniform temperature control. Summary of the Invention

[0004] This application discloses a method for temperature control of semiconductor process equipment and dielectric window, so as to achieve uniform temperature control of dielectric window.

[0005] To solve the above problems, this application adopts the following technical solution:

[0006] In a first aspect, this application provides a semiconductor process apparatus, including a reaction chamber, a dielectric window, a nozzle, and a control system, wherein:

[0007] The medium window is located at the top of the reaction chamber, and the nozzle passes through the medium window; the medium window includes a first temperature control layer and a second temperature control layer stacked from top to bottom;

[0008] The first temperature control layer includes a heat exchange channel disposed therein, and a heat exchange medium is disposed therein. The control system is configured to regulate the temperature of the first temperature control layer by adjusting the temperature of the heat exchange medium.

[0009] The second temperature control layer includes multiple annular zones surrounding the nozzle and arranged radially. Each annular zone is provided with a temperature measuring device and a heater. The temperature measuring device is used to detect the temperature of the corresponding annular zone. The control system is configured to regulate the temperature of the corresponding annular zone by adjusting the temperature of the heater based on the detection data of the temperature measuring device.

[0010] Secondly, this application provides a method for controlling the temperature of a dielectric window, applied to the semiconductor process equipment described in the first aspect of this application; the temperature control method includes:

[0011] The first temperature control layer is controlled to heat the second temperature control layer;

[0012] Temperatures were collected from multiple of the aforementioned annular regions;

[0013] Determine whether the temperature of each of the annular zones is within a preset temperature range;

[0014] When the temperature of each annular zone is within the preset temperature range, the output power of the heater corresponding to the annular zone is controlled so that the temperature of the annular zone tends to the target temperature.

[0015] The technical solution adopted in this application can achieve the following beneficial effects:

[0016] In the semiconductor process equipment and temperature control method for dielectric window disclosed in this application, the dielectric window includes a first temperature control layer and a second temperature control layer stacked from top to bottom. The first temperature control layer includes a heat exchange channel disposed therein. The temperature of the first temperature control layer can be adjusted by the temperature of the heat exchange medium in the heat exchange channel, thereby providing auxiliary temperature control for the dielectric window.

[0017] Meanwhile, each annular zone of the second temperature control layer is equipped with a heater and a temperature measuring device. The temperature of each annular zone can be accurately collected by the temperature measuring device, and the temperature of the corresponding annular zone can be adjusted to approach the target temperature by the heater. It is precisely because the heater and the temperature measuring device are embedded in the second temperature control layer that the medium window can be precisely and uniformly controlled. Attached Figure Description

[0018] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0019] Figure 1 This is a schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiments of this application;

[0020] Figure 2 This is a schematic diagram illustrating the cooperation relationship between the medium window and the nozzle as disclosed in an embodiment of this application;

[0021] Figure 3 This is a schematic diagram of the structure of the first temperature control layer disclosed in the embodiments of this application;

[0022] Figure 4 This is a schematic diagram of the structure of the second type of first temperature control layer disclosed in the embodiments of this application;

[0023] Figure 5 This is a schematic diagram of the structure of the second temperature control layer disclosed in an embodiment of this application;

[0024] Figure 6 This is a schematic diagram of the flow uniform plate disclosed in the embodiments of this application;

[0025] Figure 7 This is a flowchart of a method for controlling the temperature of a medium window disclosed in an embodiment of this application;

[0026] Figure 8 This is a graph showing the relationship between the output power duty cycle and time of the temperature controller under different ignition power levels disclosed in the embodiments of this application.

[0027] Explanation of reference numerals in the attached figures:

[0028] 100 - Reaction chamber, 110 - Process space, 120 - Electrostatic chuck

[0029] 200 - Medium window, 210 - First temperature control layer, 211 - Heat exchange channel, 211a - Arc segment, 211b - Connecting section, 212 - Through hole, 220 - Second temperature control layer, 221 - Heater, 222 - Temperature sensing device

[0030] 300 - Nozzle, 310 - Internal air passage, 320 - External air passage

[0031] 400 - Control System, 410 - Filter, 420 - Solid State Relay, 430 - Signal Moderator, 440 - Temperature Controller, 450 - Industrial PC

[0032] 500 - Upper electrode system, 510 - Induction coil, 520 - Upper matching unit, 530 - Upper RF power supply.

[0033] 600 - Flow equalizer, 610 - Flow equalizer channel, 620 - Air outlet. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0035] The technical solutions disclosed in the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0036] To address the technical problem of achieving uniform temperature control of the dielectric window in semiconductor process equipment in related technologies, embodiments of this application provide a semiconductor process apparatus. This application does not limit the specific type of this semiconductor process apparatus; it can specifically be an etching apparatus, a plasma immersion ion implantation apparatus, etc.

[0037] Please see Figures 1-6 The semiconductor process equipment disclosed in this application includes a reaction chamber 100, a dielectric window 200, a nozzle 300, and a control system 400.

[0038] The reaction chamber 100 includes a process space 110, within which semiconductor processes are performed. A dielectric window 200 is located at the top of the reaction chamber 100, forming a closed process space 110 with the chamber wall, and enabling radio frequency coupling into the process space 110 to excite process gases to form plasma. A nozzle 300, which penetrates the dielectric window 200, delivers process gases into the process space 110. A control system 400 regulates the temperature of the dielectric window 200.

[0039] To improve the uniform temperature control performance of the medium window 200, the present application proposes improvements to the medium window 200.

[0040] In this embodiment, the medium window 200 includes a first temperature control layer 210 and a second temperature control layer 220 stacked from top to bottom, that is, the second temperature control layer 220 is disposed closer to the process space 110.

[0041] The first temperature control layer 210 includes a heat exchange channel 211 disposed therein, and a heat exchange medium is disposed therein. The control system 400 is configured to regulate the temperature of the first temperature control layer 210 by adjusting the temperature of the heat exchange medium.

[0042] In this structural layout, the first temperature control layer 210 can provide a base temperature for the medium window 200. Specifically, before the process begins, the temperature of the heat exchange medium can be adjusted by the control system 400 to preheat the heat exchange medium to a certain temperature, and then radiated by the first temperature control layer 210 to the entire medium window 200, so that the medium window 200 has a base temperature before the process. Therefore, the first temperature control layer 210 can provide auxiliary temperature control for the medium window 200.

[0043] The heat exchange medium can be a liquid medium, a gaseous medium, etc., specifically, such as cooling water, cooling airflow, etc. Of course, the embodiments of this application do not limit the specific type of heat exchange medium.

[0044] The second temperature control layer 220 includes multiple annular zones surrounding the nozzle 300 and arranged radially. Each annular zone is provided with a temperature measuring device 222 and a heater 221. The temperature measuring device 222 is used to detect the temperature of the corresponding annular zone. The control system 400 is configured to regulate the temperature of the corresponding annular zone by adjusting the temperature of the heater 221 based on the detection data of the temperature measuring device 222.

[0045] In this structural layout, the second temperature control layer 220 of this embodiment is divided into multiple annular zones (see details). Figure 2 and Figure 3 The area between the midpoints of the line is provided, and each annular area is provided with a temperature measuring device 222 and a heater 221, which is equivalent to embedding a temperature measuring device 222 and a heater 221 in multiple annular areas along the radial direction within the medium window 200.

[0046] Both the temperature sensing device 222 and the heater 221 are communicatively connected to the control system 400, thereby enabling information exchange. The temperature sensing device 222 can accurately acquire the real-time temperature of the corresponding annular zone and transmit the detected data to the control system 400, thus realizing the acquisition of the temperature of each annular zone.

[0047] Next, the control system 400 compares the temperature detection data of each annular zone with the target temperature and controls the heater 221 to adjust the temperature of each annular zone until the temperature of each annular zone approaches the target temperature.

[0048] Compared to related technologies that control temperature by means of the edge or outer surface of the medium window 200, the medium window 200 in this embodiment is equipped with multiple annular regions along the radial direction, in which temperature measuring devices 222 and heaters 221 are embedded. In other words, the temperature measuring devices 222 and heaters 221 are roughly evenly distributed on the medium window 200, which undoubtedly improves the temperature control uniformity of the medium window 200 and makes the temperature measurement and control effects more accurate.

[0049] In the embodiments of this application, the arrangement of the heater 221 in the annular region can be varied.

[0050] like Figure 3 As shown, in one embodiment, there is one heater 221 within the annular zone, and the heater 221 is an annular heater 221. Since the shape of the annular heater 221 matches that of the annular zone, the temperature of the entire annular zone can be easily controlled by adjusting the temperature of the annular heater 221.

[0051] Or, such as Figure 4As shown, in another embodiment, multiple heaters 221 are arranged circumferentially within the annular zone. In this structural layout, because multiple heaters 221 are evenly arranged circumferentially within the annular zone, each heater 221 can regulate a portion of the annular zone. Overall, the circumferential ring of heaters 221 achieves temperature regulation of the entire annular zone. Since each heater 221 can be individually temperature-controlled, the temperature control accuracy and temperature adjustability of the corresponding annular zone are improved.

[0052] Of course, in multiple annular zones, the heaters 221 in some annular zones can be set as ring heaters 221, while multiple heaters 221 are uniformly arranged circumferentially in other annular zones. In other words, the structural layouts of the two heaters 221 mentioned above are combined.

[0053] The semiconductor process equipment also includes an upper electrode system 500, which includes an induction coil 510, an upper matching unit 520, and an upper RF power supply 530. The upper matching unit and the upper RF power supply 530 are used to transmit RF signals to the induction coil 510 to apply an ignition electric field to the process space 110. The induction coil 510 dissipates a significant amount of heat during operation, causing substantial temperature fluctuations in its area. These temperature fluctuations increase the difficulty of temperature control in the area corresponding to the dielectric window 200.

[0054] Based on this, such as Figure 4 The semiconductor process equipment also includes an induction coil 510. Along the height direction of the semiconductor process equipment, the induction coil 510 is correspondingly arranged with an annular zone. In the annular zone corresponding to the induction coil 510, there can be multiple temperature measuring devices 222, and the temperature measuring devices 222 are evenly arranged in the annular zone along the circumference.

[0055] With this structural layout, because multiple temperature measuring devices 222 are set, multiple temperature measuring devices 222 can simultaneously collect multiple temperature detection data. Compared with the scheme of collecting only one temperature detection data, there is obviously a more comprehensive control over the temperature condition of the annular zone. This also enables more precise temperature control of the annular zone corresponding to the induction coil 510, thereby offsetting the temperature fluctuations caused by the induction coil 510.

[0056] In one embodiment where multiple heaters 221 and multiple temperature measuring devices 222 are provided in the annular zone, the number of temperature measuring devices 222 can be the same as the number of heaters 221, and they are set in a one-to-one correspondence. In this case, the temperature of the area where the temperature measuring device 222 is located can be individually adjusted by the corresponding heater 221 based on the temperature detection data collected by the temperature measuring device 222.

[0057] In an embodiment where multiple temperature measuring devices 222 and an annular heater 221 are provided in the annular zone, the average value of multiple temperature detection data collected by the temperature measuring devices 222 can be calculated first, and then the annular heater 221 can control the temperature based on the average value.

[0058] At the same time, multiple temperature measuring devices 222 can be evenly arranged in the annular zone along the circumference, thereby improving the temperature measuring accuracy.

[0059] Optionally, the induction coil 510 is arranged to correspond to the middle ring zone among multiple ring zones. This facilitates the structural layout of the induction coil 510, and the length of the induction coil 510 under this layout is more suitable, which can provide more suitable up-frequency energy.

[0060] It should be noted that the number of annular zones is related to the outer diameter of the induction coil 510. When the outer diameter of the induction coil 510 is large, the number of annular zones can be increased.

[0061] In one specific implementation, such as Figure 4 As shown, there are three annular zones, from the inside out: an inner annular zone, a middle annular zone, and an outer annular zone. The induction coil 510 is positioned corresponding to the middle annular zone. Multiple heaters 221 are arranged within the middle annular zone, and each heater 221 corresponds to a specific temperature sensing device 222. Based on this feature of one-to-one correspondence between multiple heaters 221 and multiple temperature sensing devices 222, this embodiment can improve the accuracy of temperature measurement and control, which will not be elaborated further here.

[0062] It should be noted that, considering the space occupied by the nozzle 300 and the creepage distance, there are certain limitations to the setting of the annular zone. To ensure successful setting of the annular zone, the innermost annular zone's inner diameter should be greater than or equal to 14 cm. In this case, the inner diameter of the induction coil 510 can also be set to greater than or equal to 14 cm, ensuring that the induction coil 510 can at least correspond to the innermost annular zone, thereby reducing the temperature fluctuations caused by the induction coil 510.

[0063] Of course, the specific value of the inner diameter of the induction coil 510 is not limited, and it can be 15cm, 17cm, 20cm, etc.

[0064] Among the optional solutions, such as Figure 5 As shown, the heat exchange channel 211 may include multiple arc segments 211a and multiple connecting segments 211b. The multiple arc segments 211a are arranged concentrically with the nozzle 300 as the center. Two adjacent arc segments 211a are connected by connecting segments 211b, and the flow directions of the heat exchange medium in two adjacent arc segments 211a are opposite.

[0065] This structural layout extends the reach of the heat exchange channels 211, thereby increasing the temperature control area of ​​the heat exchange channels 211 and enhancing the temperature control capability of the medium window 200. Simultaneously, the arc segment 211a configuration makes the distribution of the heat exchange channels 211 more regular and uniform, which also improves the temperature control uniformity of the first temperature control layer 210.

[0066] Furthermore, the arc segments 211a are connected by a connecting segment 211b to form a bent structure, allowing the heat exchange medium to reflux at the bend. Figure 5 As shown, the heat exchange medium switches between clockwise and counterclockwise flow directions at the bend. In this case, the additional induced electric fields generated by the metallic impurities inside the heat exchange medium will cancel each other out, thereby reducing the coupling effect and thus reducing interference to the lower electrode system.

[0067] In this embodiment of the application, the specific shape of the connecting segment 211b is not limited, and it can be a straight strip, an arc bend, etc.

[0068] Among the optional solutions, such as Figure 2 and Figure 6 As shown, the nozzle 300 includes an inner air passage 310 and an outer air passage 320 arranged circumferentially along the inner air passage 310. The inner air passage 310 is connected to the process space 110 of the reaction chamber 100. The semiconductor process equipment also includes a flow equalizer 600, which is stacked with the dielectric window 200, and the flow equalizer 600 is located on the side of the dielectric window 200 closer to the process space 110. The flow equalizer 600 includes a plurality of flow equalizers 610 and an outlet 620 corresponding to each flow equalizer 610. The plurality of flow equalizers 610 are all connected to the outer air passage 320 and are arranged radially along the flow equalizer 600. The end of the flow equalizer 610 away from the outer air passage 320 is connected to the process space 110 through the outlet 620.

[0069] In this structural layout, process gas can be delivered to the center of the process space 110 through the inner gas channel 310, and process gas can be delivered to the circumferential area within the process gas through the outer gas channel 320. This can improve the uniformity of the distribution of process gas within the process space 110, which is conducive to the formation of a uniform plasma.

[0070] Meanwhile, the process gas transported by the external gas duct 320 follows a transport path through the external gas duct 320, the uniform flow duct 610, the outlet 620, and the process space 110. This undoubtedly extends the transport path of the process gas, which can prolong the heating time and thermal contact area of ​​the process gas, thereby improving the temperature uniformity of the process gas and enabling rapid heating. Simultaneously, the medium window 200 can also achieve a certain degree of uniform temperature control of the plasma within the process space 110 through the uniform flow plate 600.

[0071] The uniform flow channel 610 can be located on the upper surface of the uniform flow plate 600. This structural layout is easy to process. Of course, the uniform flow channel 610 can also be located inside the uniform flow plate 600. This application embodiment does not limit it.

[0072] Optionally, the outlet 620 can be located at the edge of the flow equalizer 600 so that the process gas from the outer gas duct 320 can be delivered to the edge region of the process space 110, thereby improving the uniformity of process gas distribution inside the process space 110. The gas flow rate of the outer gas duct 320 can be greater than the gas flow rate of the inner gas duct 310.

[0073] Among the optional solutions, such as Figure 5 As shown, the first temperature control layer 210 is provided with multiple wire-passing holes 212, which communicate with the second temperature control layer 220. The heater 221 and the temperature measuring device 222 can be routed through the wire-passing holes 212. With this configuration, the wiring inside the medium window 200 passes through the wire-passing holes 212 of the first temperature control layer 210, which simplifies the structural layout and improves the structural compactness of the medium window 200.

[0074] The wire hole 212 can be located on the outer periphery of the edge portion of the heat exchange channel 211, which not only facilitates the opening of the wire hole 212, but also enables the wiring layout and prevents the wiring from interfering with the heat exchange channel 212.

[0075] Of course, in the case where the specific wiring inside the medium window 200 is not limited in the embodiments of this application, for example, the wiring of the heater 221 and the temperature measuring device 222 can also be directly passed out from the side of the second temperature control layer 220.

[0076] like Figure 1 As shown, an electrostatic chuck 120 is provided inside the reaction chamber 100. The electrostatic chuck 120 is used to adsorb and fix the wafer to be processed.

[0077] The control system 400 may include a filter 410, a solid-state relay 420, a signal conditioner 430, a temperature controller 440, and an industrial computer 450. The filter 410 filters out interference signals, preventing radio frequency interference between devices. The solid-state relay 420 controls the output power of the heater 221 by adjusting its on / off duty cycle signal. The signal conditioner 430 converts the temperature signal into a voltage or current signal. The temperature controller 440 and the industrial computer 450 are used to regulate the temperature of the heater 221.

[0078] Please see Figures 1 to 8 This application embodiment also provides a temperature control method for a dielectric window 200, which is applied to semiconductor process equipment of any of the aforementioned schemes;

[0079] The temperature control method in this application includes:

[0080] S100, control the first temperature control layer 210 to heat the second temperature control layer 220;

[0081] S200, collects the temperature of multiple annular zones respectively;

[0082] S300: Determine whether the temperature of each annular zone is within the preset temperature range;

[0083] S400: When the temperature of each annular zone is within the preset temperature range, control the output power of the heater 221 corresponding to the annular zone so that the temperature of the annular zone tends to the target temperature.

[0084] The control method of this application embodiment is implemented based on the dielectric window 200 of the semiconductor process equipment of this application embodiment. For the specific structure of the semiconductor process equipment and the dielectric window 200, please refer to the corresponding content above.

[0085] In step S100, the first temperature control layer 210 provides a base temperature for the medium window 200. Specifically, before the process begins, the temperature of the heat exchange medium can be adjusted by the control system 400 to preheat the heat exchange medium to a certain temperature. Heat is then conducted from the first temperature control layer 210 to the second temperature control layer 220 and radiated to the entire medium window 200, ensuring that the medium window 200 has a base temperature before the process. Therefore, the first temperature control layer 210 can provide auxiliary temperature control for the medium window 200.

[0086] Let T represent the target temperature, which is the temperature that the medium window 200 needs to reach during the process. The base temperature provided by the first temperature control layer 210 to the medium window 200 can be T-5℃. Of course, this embodiment does not limit the specific value of the base temperature, and it can be any value between 2℃ and 10℃ different from the target temperature. It can be adaptively adjusted according to T and specific operating conditions. For example, the base temperature can also be T-2℃ or T-10℃. Where T can be set to 100℃, the base temperature can be set to 95℃.

[0087] In step S200, temperature measuring devices 222 are provided in multiple annular zones of the second temperature control layer 220. The temperature measuring devices 222 are used to detect the temperature of the corresponding annular zone. At the same time, the temperature measuring devices 222 can transmit the detected data to the control system 400, thereby realizing the acquisition of temperature of each annular zone.

[0088] Here, Ti represents the detection temperature of the temperature measuring device 222, which is the real-time temperature of the annular zone.

[0089] In step S300, the control system 400 compares the temperature detection data of each annular zone with the preset temperature range to determine whether the temperature of each annular zone is within the preset temperature range.

[0090] The preset temperature range can be set to T±5℃. For example, when T is set to 100℃, the preset temperature range is 95~105℃.

[0091] In step S400, if the temperature of each annular zone is within a preset temperature range, precise temperature control of the medium window 200 can be achieved. Specifically, since each annular zone is equipped with a heater 221, when there is a temperature difference between the detected temperature and the target temperature, the control system 400 can control the heater 221 to adjust the temperature of each annular zone until the temperature of each annular zone approaches the target temperature. Simultaneously, since the temperature sensing device 222 and the heater 221 are uniformly distributed within the medium window 200, uniform temperature control of the medium window 200 can undoubtedly be achieved.

[0092] Compared to related technologies that control temperature at the edge or outer surface of the medium window 200, the control method in this application embodiment uses both the first temperature control layer 210 for auxiliary temperature control and the second temperature control layer 220 for precise and uniform temperature control, which undoubtedly improves the temperature uniformity of the medium window 200.

[0093] Optionally, such as Figure 7 As shown, controlling the output power of the heater 221 corresponding to the annular zone in step S400 may include:

[0094] When the semiconductor process equipment is idle, the output power of heater 221 is controlled according to the difference between the temperature of the annular zone and the target temperature, and according to the PID algorithm.

[0095] When the semiconductor process equipment is in the process state, the output power duty cycle D of the control system 400 is determined according to the output power fitting function, and the output power of the heater 221 is controlled according to the output power duty cycle D.

[0096] The output power fitting function is used to characterize the mapping relationship between the ignition time and the output power duty cycle D under a specific ignition power.

[0097] It should be noted that when semiconductor process equipment is in the process state, the upper electrode system 500 and other components will generate heat, which will cause changes in the temperature control environment of the dielectric window 200. Therefore, precise temperature control is required depending on the situation.

[0098] When the semiconductor process equipment is idle, the temperature control environment of the dielectric window 200 is not easily fluctuated. Therefore, the temperature controller 440 of the control system 400 can directly use a PID algorithm to compare the temperature difference between the annular zone and the target temperature, transmit the temperature difference signal to the industrial computer 450, and then adjust the on / off duty cycle of the solid-state relay 420 to regulate the output power of the heater 221 to achieve uniform temperature control. In this case, the temperature of each annular zone can be adjusted to T±1℃, for example, 100±1℃.

[0099] When the semiconductor process equipment is in the process state, the temperature control environment of the dielectric window 200 fluctuates due to the influence of the induction coil 510. It is difficult to eliminate the above fluctuation effect by simply comparing the difference between the temperature of the ring zone and the target temperature by the control system 400. Therefore, it is necessary to combine the output power fitting function of the temperature controller 440.

[0100] Specifically, based on the output power fitting function, the output power duty cycle D of the control system 400 at that time node can be calculated according to the ignition time. Then, the output power of the heater 221 can be smoothly controlled by the output power duty cycle D, thereby adjusting the heater 221 to a suitable output power to ultimately achieve uniform temperature control. In this case, the temperature of each annular zone can be adjusted to T±0.5℃, for example, 100±0.5℃, to enhance the control accuracy and further improve the temperature uniformity of the medium window 200.

[0101] In this context, the output power duty cycle D of the control system 400 refers to the output power duty cycle D of the temperature controller 440.

[0102] Furthermore, determining the output power duty cycle D of the control system 400 based on the output power fitting function may include:

[0103] Obtain the ignition power corresponding to the process;

[0104] Based on the current ignition time and the output power fitting function that matches the ignition power, the output power duty cycle D of the control system 400 is determined.

[0105] In the control method of this application embodiment, the control system 400 can read the ignition power of the RF power supply 530, thereby determining the specific value of the ignition power and the corresponding output power fitting function.

[0106] Next, the derivation process of the output power fitting function of the thermostat 440 will be explained through an example.

[0107] Data on the change of the duty cycle D of the output power of the temperature controller 440 over time at different ignition powers can be obtained as follows: Figure 8The curves in the diagram show the relationship between the output power duty cycle D of the thermostat 440 and time, where S1 is the minimum ignition power P1 and S2 is the maximum ignition power P2 and S2. By changing the ignition power, the relationship between the output power duty cycle D of the thermostat 440 and time in region A can be obtained. It should be noted that... Figure 8 In the context of radio frequency power, "lighting power" is synonymous with "lighting power".

[0108] The output power duty cycle D of the thermostat 440 changes with time under different ignition powers. Through experiments, data sets of the output power duty cycle D of the thermostat 440 at different times under different ignition powers can be collected (see Table 1 below). Then, the data is fitted using relevant data analysis software (such as MATLAB, Python, etc.) to obtain a set of fitting functions for the output power, i.e., the output power fitting function.

[0109]

[0110] Table 1

[0111] The following set of fitting functions for the output power was obtained based on a large amount of experimental data:

[0112] D1=-0.0138t4+0.3438t3-2.4587t2+1.6636t+93.338(P=1500W)

[0113] D2=-0.0006t4+0.0497t3-0.3988t2-4.627t+97.56(P=2000W)

[0114] D3=0.0075t4-0.1997t3+2.1246t2-15.01t+106.11(P=2500W)

[0115] Where t is the process time, which can range from 0 to 20 min, but this embodiment does not impose a specific limitation on it; D1, D2 and D3 are the output power duty cycles D of the temperature controller 440 at different ignition power, which range from 0 to 100%.

[0116] Optionally, such as Figure 7 As shown, step S100, controlling the first temperature control layer 210 to heat the second temperature control layer 220, may include:

[0117] When the temperature in the annular zone is less than the first temperature threshold, the temperature of the heat exchange medium is controlled to rise to the first temperature threshold; wherein, the first temperature threshold is the lower limit of the preset temperature range.

[0118] It should be understood that controlling the temperature of the heat exchange medium provides a base temperature for the medium window 200, thereby providing auxiliary temperature control for the medium window 200. This step of providing auxiliary temperature control for the medium window 200 is actually a closed-loop control process. The temperature of the heat exchange medium can be adjusted based on the detection data collected by the temperature measuring device 222, avoiding control errors caused by the temperature of the heat exchange medium not matching the lower limit of the preset temperature range.

[0119] Optionally, such as Figure 7 As shown, temperature control methods may also include:

[0120] If the temperature in the annular zone exceeds the second temperature threshold, the heat exchange medium is cooled to reduce the temperature in the annular zone to within a preset temperature range; wherein, the second temperature threshold is the upper limit of the preset temperature range.

[0121] It should be understood that if the temperature in the annular zone exceeds the preset temperature range, the temperature of the medium window 200 needs to be reduced due to the excessively high temperature. By cooling the heat exchange medium, the overall temperature of the first temperature control layer 210 is reduced, thereby changing the temperature of the second temperature control layer 220 and ultimately reducing the temperature of the annular zone to the preset range.

[0122] Furthermore, such as Figure 7 As shown, the step of cooling the heat exchange medium may include:

[0123] The heat exchange medium is cooled according to a preset gradient value until the temperature in the annular zone drops to within a preset temperature range; the preset gradient value is used to characterize the temperature reduction of the heat exchange medium each time.

[0124] It should be understood that since the temperature of the annular zone is changed by the heat exchange medium within the first temperature control layer 210, and then by heat conduction between the first temperature control layer 210 and the second temperature control layer 220, there will be temperature fluctuations between the two. In this step, the temperature control method of this embodiment adopts a preset gradient value decreasing cooling method, which can avoid large temperature fluctuations in the annular zone, thereby achieving better regulation stability.

[0125] Here, j represents the preset gradient value, which can be 1℃, or 0.5℃, 1.5℃, etc.

[0126] Furthermore, such as Figure 7 As shown, after cooling the heat exchange medium according to a preset gradient value, the temperature control method may further include:

[0127] Record the number of cooling processes. If the number of cooling processes exceeds the preset threshold, perform at least one of the following operations: cut off the output of heater 221, output an abnormal alarm message, and control the heat exchange medium to cool down to room temperature.

[0128] Based on the above steps, it can be determined whether there is an abnormality in the temperature control process of the medium window 200. If the number of cooling processes exceeds the preset threshold, it indicates that there is an abnormality in the cooling process of the medium window 200, and an abnormality handling operation can be performed. The abnormality handling operation may be to cut off the output of the heater 221, output an abnormal alarm message, and control the heat exchange medium to cool down to part or all of the room temperature.

[0129] When the heat exchange medium is cooled to room temperature, particle condensation on the surface of the medium window 200 can be avoided. The room temperature can be 25°C.

[0130] If the number of cooling processes is less than or equal to the preset threshold, the temperature of the medium window 200 can be adjusted to the preset temperature range again through the cooling process.

[0131] The preset threshold number of times can be 5 times, or it can be 4 times, 6 times, 7 times, etc.

[0132] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0133] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A semiconductor process apparatus, characterized in that, Includes a reaction chamber, a media window, nozzles, and a control system, wherein: The medium window is located at the top of the reaction chamber, and the nozzle passes through the medium window; the medium window includes a first temperature control layer and a second temperature control layer stacked from top to bottom; The first temperature control layer includes a heat exchange channel disposed therein, and a heat exchange medium is disposed therein. The control system is configured to regulate the temperature of the first temperature control layer by adjusting the temperature of the heat exchange medium, and to enable the medium window to have a base temperature by preheating the heat exchange medium. The second temperature control layer includes multiple annular zones surrounding the nozzle and arranged radially. Each annular zone is provided with a temperature measuring device and a heater. The temperature measuring device is used to detect the temperature of the corresponding annular zone. The control system is configured to regulate the temperature of the corresponding annular zone by adjusting the temperature of the heater based on the detection data of the temperature measuring device.

2. The semiconductor process equipment according to claim 1, characterized in that, Within the annular zone, there is one heater, and the heater is an annular heater; Alternatively, within the annular zone, there may be multiple heaters, which are evenly arranged circumferentially within the annular zone.

3. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment also includes an induction coil. Along the height direction of the semiconductor process equipment, the induction coil is correspondingly arranged with one of the annular zones. In the annular zone corresponding to the induction coil, there are multiple temperature measuring devices, and the temperature measuring devices are evenly arranged circumferentially in the annular zone.

4. The semiconductor process equipment according to claim 3, characterized in that, The number of the ring zones is three, which are, from the inside out, the inner ring zone, the middle ring zone, and the outer ring zone. The induction coil is arranged corresponding to the middle ring zone. Multiple heaters are arranged in the middle ring zone, and multiple heaters are arranged corresponding to multiple temperature measuring devices.

5. The semiconductor process equipment according to claim 1, characterized in that, The heat exchange channel includes multiple arc segments and multiple connecting segments. The multiple arc segments are arranged concentrically with the nozzle as the center. Adjacent arc segments are connected by the connecting segments, and the flow direction of the heat exchange medium in adjacent arc segments is opposite.

6. The semiconductor process equipment according to claim 1, characterized in that, The nozzle includes an inner air channel and an outer air channel arranged circumferentially along the inner air channel. The inner air channel is connected to the process space of the reaction chamber. The semiconductor process equipment also includes a flow equalizer, which is stacked with the dielectric window and located on the side of the dielectric window closer to the process space. The flow equalizer includes multiple flow equalizer channels and air outlets corresponding to each flow equalizer channel. The multiple flow equalizer channels are all connected to the external air channel and are arranged radially along the flow equalizer. The end of each flow equalizer channel facing away from the external air channel is connected to the process space through the air outlet.

7. A method for controlling the temperature of a medium window, characterized in that, The method is applied to the semiconductor process equipment according to any one of claims 1 to 6; the temperature control method includes: The first temperature control layer is controlled to heat the second temperature control layer; Temperatures were collected from multiple of the aforementioned annular regions; Determine whether the temperature of each of the annular zones is within a preset temperature range; When the temperature of each annular zone is within the preset temperature range, the output power of the heater corresponding to the annular zone is controlled so that the temperature of the annular zone tends to the target temperature.

8. The temperature control method according to claim 7, characterized in that, The control of the output power of the heater corresponding to the annular zone includes: When the semiconductor process equipment is idle, the output power of the heater is controlled according to the difference between the temperature of the annular zone and the target temperature, and according to the PID algorithm. When the semiconductor process equipment is in process mode, the output power duty cycle of the control system is determined according to the output power fitting function, and the output power of the heater is controlled according to the output power duty cycle. The output power fitting function is used to characterize the mapping relationship between the ignition time and the output power duty cycle under a specific ignition power.

9. The temperature control method according to claim 8, characterized in that, Determining the output power duty cycle of the control system based on the output power fitting function includes: Obtain the ignition power corresponding to the process; Based on the current ignition time and the output power fitting function that matches the ignition power, the output power duty cycle of the control system is determined.

10. The temperature control method according to claim 7, characterized in that, The step of controlling the first temperature control layer to heat the second temperature control layer includes: When the temperature in the annular zone is less than a first temperature threshold, the temperature of the heat exchange medium is controlled to rise to the first temperature threshold; wherein, the first temperature threshold is the lower limit of the preset temperature range.

11. The temperature control method according to claim 7, characterized in that, The temperature control method also includes: If the temperature in the annular zone is greater than the second temperature threshold, the heat exchange medium is cooled to reduce the temperature in the annular zone to within the preset temperature range; wherein the second temperature threshold is the upper limit of the preset temperature range.

12. The temperature control method according to claim 11, characterized in that, The cooling process for the heat exchange medium includes: The heat exchange medium is cooled according to a preset gradient value until the temperature of the annular zone is reduced to within the preset temperature range; the preset gradient value is used to characterize the temperature reduction of the heat exchange medium each time.

13. The temperature control method according to claim 12, characterized in that, After cooling the heat exchange medium according to a preset gradient value, the temperature control method further includes: The number of cooling processes is recorded. If the number of cooling processes exceeds a preset threshold, at least one of the following operations is performed: the heater output is cut off, an abnormal alarm message is output, and the heat exchange medium is controlled to cool down to room temperature.

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