Exhaust system, exhaust method, and semiconductor apparatus

Abstract

The application relates to a tail gas exhaust system, an exhaust method and a semiconductor device, and belongs to the technical field of semiconductor manufacturing. The application solves the problem of low production efficiency caused by the way of preventing by-products from flying onto wafers by replacing end execution arms in the prior art. The tail gas exhaust system comprises a plurality of micropores arranged on the surface of an end execution arm, a multi-branch mixing cavity, a control valve and an exhaust pipeline. The exhaust pipeline comprises a first exhaust pipeline located in the end execution arm and a second exhaust pipeline located outside the end execution arm. The multi-branch mixing cavity is provided with an air outlet and a plurality of air inlets. The number of the air inlets is the same as that of the micropores. The micropores and the air inlets are connected through the first exhaust pipeline. The gas of the plurality of micropores is gathered in the multi-branch mixing cavity. The air outlet and the control valve are connected through the second exhaust pipeline. The application fundamentally prevents the generation of by-products.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to an exhaust gas removal system, removal method, and semiconductor equipment. Background Technology

[0002] In semiconductor manufacturing, toxic gases such as Cl2, HBr, and BCl3 are used in the reaction chamber. After the process is completed, when the end effector of the atmospheric transport module robot picks up the wafer from the pre-vacuum chamber (Airlock) and moves from the buffer station to the front-opening wafer cassette (FOUP), the exhaust gas on the wafer surface is directly exposed to the atmosphere. After reacting with moisture in the atmosphere, it forms byproducts. As the atmospheric transport module robot moves rapidly, the byproducts are randomly scattered, causing defects on the wafer and causing quality problems. At the same time, the byproducts will contaminate the end effector. Currently, semiconductor manufacturing equipment does not have an exhaust gas prevention system or an exhaust gas treatment system.

[0003] The prior art solves the above-mentioned technical problems in the following two ways:

[0004] The first method: Set up a buffer station in the front-end module (EFEM) to temporarily store the chip;

[0005] The second method involves replacing the end effector arm when it generates byproduct contamination. After replacement, the end effector arm needs to be recalibrated, and the entire repair process takes more than 12 hours. Furthermore, since a system consists of multiple process chambers, the other process chambers cannot be used during the replacement and calibration of the end effector arm. Therefore, this method results in low production efficiency. Summary of the Invention

[0006] Based on the above analysis, the present invention aims to provide an exhaust gas removal system, removal method, and semiconductor device to solve the problem of low production efficiency caused by the prior art method of preventing by-products from flying onto the wafer by replacing the end effector arm.

[0007] The objective of this invention is mainly achieved through the following technical solutions:

[0008] On one hand, the present invention provides an exhaust gas removal system, including a plurality of micropores disposed on the surface of an end effector arm and an exhaust gas suction system communicating with the micropores. The exhaust gas suction system includes a multi-branch mixing chamber, a control valve for controlling the opening and closing of the exhaust gas removal system, and an exhaust pipeline. The exhaust pipeline includes a first exhaust pipeline located inside the end effector arm and a second exhaust pipeline located outside the end effector arm. The first exhaust pipeline communicates with the micropores. One side of the multi-branch mixing chamber is connected to the first exhaust pipeline, and the other side of the multi-branch mixing chamber is connected to the second exhaust pipeline.

[0009] The multi-branch mixing chamber is provided with an air outlet and multiple air inlets. The number of air inlets is the same as the number of the first discharge pipeline. The micropores and the air inlets are connected through the first discharge pipeline. The gas drawn in through the multiple micropores is collected in the multi-branch mixing chamber. The air outlet and the control valve are connected through the second discharge pipeline.

[0010] Based on the above solution, the present invention has made the following improvements:

[0011] Based on the further improvement of the exhaust gas removal system described above, the diameter of the micropores is less than 0.5 mm.

[0012] Based on the further improvement of the exhaust gas removal system described above, the spacing of the micropores is 0.5-1.5cm.

[0013] Based on the further improvement of the exhaust gas removal system, the area with micropores on the end effector arm is the boundary surface of the end effector arm that is closest to the edge of the wafer.

[0014] Based on the further improvements to the exhaust gas removal system described above, the diameter of the first exhaust pipeline is 1-5 mm.

[0015] Based on a further improvement to the aforementioned exhaust gas removal system, the end effector arm is provided with a step to form an exhaust channel. A further improvement to the aforementioned exhaust gas removal system also includes a speed controller for adjusting the suction speed, the speed controller being located between the exhaust port of the multi-branch mixing chamber and the control valve.

[0016] On the other hand, the present invention also provides a method for exhaust gas removal, comprising:

[0017] When the exhaust gas exhaust system is activated, the exhaust gas is drawn in through multiple micro-holes on the surface of the end effector arm, mixed in the multi-branch mixing chamber, and then enters the atmospheric transmission module through the exhaust pipeline.

[0018] The wafer in the wafer cassette with the front opening on the end effector arm picks up the wafer and places it on the aligner.

[0019] After aligning the structure, the end effector arm places the wafer in the pre-vacuum chamber;

[0020] The end effector arm picks up the wafer from the pre-vacuum chamber and places it in the reaction chamber;

[0021] After the process in the reaction chamber is completed, the end effector arm places the wafer into the pre-vacuum chamber through the vacuum transfer module;

[0022] Open the exhaust system to expel exhaust gases;

[0023] The end effector arm places the wafer in the pre-vacuum chamber into the empty slot of the buffer position;

[0024] The end effector picks up the wafer and places it into the original front-opening wafer cassette.

[0025] Based on the further improvement of the above exhaust gas removal method, the exhaust gas removal system is turned on when the semiconductor equipment is idle.

[0026] Based on the further improvement of the above exhaust gas removal method, the opening and closing of the exhaust gas removal system is controlled by a control valve.

[0027] Further improvements to the above exhaust gas removal method include activating the exhaust gas removal system when the end effector arm senses the presence of a wafer.

[0028] In addition, the present invention also provides a semiconductor device including the exhaust gas removal system described above.

[0029] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

[0030] (1) This invention does not solve the problem of byproducts flying onto the wafer and causing wafer defects by replacing the end effector after byproducts are generated. Instead, it improves the structure (i.e., sets micropores on the surface of the end effector) to discharge exhaust gas and prevent byproducts from being generated, thus fundamentally solving the problem of byproducts flying onto the wafer and causing wafer defects.

[0031] (2) The exhaust gas removal system of the present invention has a simple structure and good exhaust gas removal effect, and the product yield is improved after using the exhaust gas removal system.

[0032] (3) By controlling the diameter of the micropore to below 0.5 mm, the present invention can satisfy the requirement of a certain suction rate for exhaust gas without significantly affecting the strength of the end effector.

[0033] (4) By setting micropores in specific locations (i.e., the surface of the end effector arm), the present invention can quickly and effectively remove residual gas adsorbed on the wafer surface, thereby effectively preventing by-products from flying onto the wafer and further improving product yield.

[0034] (5) The exhaust gas removal method of the present invention can improve product yield by controlling the start time of the exhaust gas removal system (i.e. when the semiconductor equipment is idle or when the end effector senses that a wafer is placed) without affecting the normal processing of the wafer and without adding extra exhaust gas removal time.

[0035] In this invention, the above-described technical solutions can be combined with each other to achieve more preferred combinations. Other features and advantages of this invention will be set forth in the following description, and some advantages will become apparent from the description or may be learned by practicing the invention. Attached Figure Description

[0036] The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Throughout the drawings, the same reference numerals denote the same parts.

[0037] Figure 1 This is a schematic diagram of the exhaust gas removal system according to an embodiment of the present invention;

[0038] Figure 2 This is a schematic diagram of the upper boundary surface of the end effector arm in an embodiment of the present invention;

[0039] Figure 3 This is a top view of the multi-branch mixing cavity according to an embodiment of the present invention;

[0040] Figure 4 This is a bottom view of the multi-branch hybrid cavity according to an embodiment of the present invention.

[0041] Figure label:

[0042] 1-Micropore; 2-Multi-branch mixing chamber; 3-Solenoid valve; 4-Pneumatic valve; 5-First discharge line; 6-Second discharge line; 7-Outlet; 8-Inlet; 9-Speed ​​controller; 10-Wafer; 11-Boundary surface. Detailed Implementation

[0043] Embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0044] The accompanying drawings illustrate various structural schematics according to embodiments of the present disclosure. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.

[0045] In the context of this disclosure, when a layer / element is referred to as being "above" another layer / element, the layer / element may be directly above the other layer / element, or there may be an intermediate layer / element between them. Additionally, if a layer / element is "above" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element.

[0046] Example 1

[0047] One specific embodiment of the present invention discloses an exhaust gas removal system for removing exhaust gases remaining on the wafer surface during the process. For example... Figure 1 As shown, the exhaust gas removal system includes multiple micro-holes 1 on the surface of the end effector arm and an exhaust gas suction system communicating with the micro-holes on the surface of the end effector arm. The exhaust gas suction system includes a multi-split mixing chamber 2, a solenoid valve 3, a pneumatic valve 4, an exhaust pipeline and an air extraction device (not shown in the figure).

[0048] It should be noted that since the purpose of setting microvias is to remove residual gas adsorbed on the wafer surface, the microvias need to be located close to the wafer. Therefore, a preferred implementation is to place the microvias on the surface of the end effector arm.

[0049] In one possible implementation, the region with the micro-hole on the end effector arm is the boundary surface 11 of the effector arm closest to the wafer 10, such as... Figure 2 As shown. For example, the diameter of the micropores is less than 0.5 mm, and the spacing between the micropores is 0.5-1.5 cm. The arrangement of multiple micropores is as follows... Figure 1 As shown. Furthermore, the cross-section of the micropores can be square, rhomboid, or other shapes in addition to being circular.

[0050] It should be noted that the boundary surface refers to the region along the length of the end effector arm, at a certain distance from the edge of the wafer. This certain distance varies depending on the size of the wafer and the length of the end effector arm.

[0051] For example, in one possible implementation, the boundary surface is the region 0-10 cm away from the edge of the wafer closest to the end of the end-effector along the length of the end-effector.

[0052] The discharge lines include a first discharge line 5 located inside the end effector arm and a second discharge line 6 located outside the end effector arm. The first discharge line 5 communicates with micropores on the surface of the end effector arm, and the second discharge line 6 is connected to a vacuum device. One side of the multi-branch mixing chamber 2 is connected to the first discharge line 5, and the other side of the multi-branch mixing chamber 2 is connected to the second discharge line 6. Both the first discharge line 5 and the second discharge line 6 are vacuum discharge lines. For example, the diameter of the first discharge line 5 is 1-5 mm.

[0053] The number of first discharge pipelines 5 is one or more. The multi-split mixing chamber 2 is used to mix the exhaust gas drawn into the first discharge pipeline from multiple micropores in order to create internal steps and form an discharge channel, thereby improving the exhaust gas extraction efficiency.

[0054] In this embodiment, the step difference refers to the fact that after the exhaust gas is sucked into the end effector, the space inside the end effector is not of equal diameter. The change in diameter forms a structure that facilitates the suction of exhaust gas, thereby forming a smooth discharge channel and preventing the retention of the sucked exhaust gas.

[0055] It is understandable that the step difference can be set not only within the space inside the end effector arm, but also at any stage of the exhaust gas extraction and emission process in the exhaust gas removal system. For example, micropores can be set with step differences, such as the micropore diameter gradually increasing along the exhaust gas flow direction; the internal cavity of the multi-branch mixing chamber 2 can be set with step differences, such as the diameter of the internal cavity gradually increasing along the exhaust gas flow direction, or designed into a streamlined shape to facilitate the extraction and emission of exhaust gas based on fluid dynamics principles.

[0056] In another possible implementation, refer to Figure 3 and Figure 4 The structure of the multi-split mixing chamber 2 can include an internal cavity (not shown in the figure), an outlet 7, and multiple inlets 8, all of which are connected to the internal cavity. The number of inlets is the same as the number of first discharge lines 5. The micropores and inlets are connected by the first discharge lines. The gas from the multiple first discharge lines 5 is mixed in the internal cavity of the multi-split mixing chamber 2, and then enters the atmospheric transport module (ATM) through the outlet of the multi-split mixing chamber 2 and the second discharge line.

[0057] The pneumatic valve is used to open and close the exhaust gas removal system. The pneumatic valve of this invention can be either double-acting or single-acting.

[0058] Solenoid valves are used to indirectly control the opening and closing of pneumatic valves. The solenoid valve of this invention can be a single-electro-controlled solenoid valve or a double-electro-controlled solenoid valve, as long as it can control the opening and closing of the pneumatic valve.

[0059] In addition, along the direction of exhaust gas emission, the following components are sequentially arranged: micropores on the surface of the end effector arm, first emission line 5, multi-split mixing chamber 2, second emission line 6, pneumatic valve and solenoid valve.

[0060] In other embodiments, the exhaust gas removal system further includes a speed controller 9. This speed controller is located between the exhaust port of the multi-branch mixing chamber and the pneumatic valve, and is used to control the exhaust rate. For example, the speed controller can be a swing valve. When the swing valve is open, the exhaust rate is high; when the opening is small, the exhaust rate is low.

[0061] Example 2

[0062] Another embodiment of the present invention discloses a method for exhaust gas removal using the exhaust gas removal system of Embodiment 1. The exhaust gas removal process will be described in detail below.

[0063] First, when the equipment is in standby mode, the exhaust gas system is activated for a certain period of time. The exhaust gas is drawn in through multiple micro-holes on the surface of the end effector arm, mixed within the internal cavity of the multi-branch mixing chamber, and then enters the atmospheric transmission module through the second exhaust pipeline. The exhaust gas removal time varies depending on the situation, generally ranging from a few seconds to tens of minutes.

[0064] The timing for activating the exhaust gas system can be either when a wafer is detected on the end effector arm, or when the semiconductor manufacturing equipment is idle.

[0065] Next, the end effector arm enters the wafer cassette with the front opening on the wafer device port to pick up the wafer and place it on the aligner to align the wafer notch.

[0066] After alignment, the end effector picks up the wafer again and places it in the pre-vacuum chamber. Then, the end effector picks up the wafer from the pre-vacuum chamber and places it in the reaction chamber.

[0067] Next, manufacturing processes, such as etching, are performed within the reaction chamber. After the process is complete, the end effector arm again places the wafer into the pre-vacuum chamber via the vacuum transfer module. Then, the exhaust gas system is activated to vent the gas for a certain period. Next, the end effector arm places the wafer from the pre-vacuum chamber into an empty slot in the buffer station; after 60-90 seconds, the end effector arm picks up the wafer and places it back into its original front-opening wafer cassette.

[0068] Example 3

[0069] Another embodiment of the present invention discloses a semiconductor device including the exhaust gas removal system of Embodiment 1.

[0070] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

[0071] (1) This invention does not solve the problem of byproducts flying onto the wafer and causing wafer defects by replacing the end effector after byproducts are generated. Instead, it improves the structure (i.e., sets micropores on the surface of the end effector) to discharge exhaust gas and prevent byproducts from being generated, thus fundamentally solving the problem of byproducts flying onto the wafer and causing wafer defects.

[0072] (2) The exhaust gas removal system of the present invention has a simple structure and good exhaust gas removal effect, and the product yield is improved after using the exhaust gas removal system.

[0073] (3) By controlling the diameter of the micropore to below 0.5 mm, the present invention can satisfy the requirement of a certain suction rate for exhaust gas without significantly affecting the strength of the end effector.

[0074] (4) By setting micropores in specific locations (i.e., the surface of the end effector arm), the present invention can quickly and effectively remove residual gas adsorbed on the wafer surface, thereby effectively preventing by-products from flying onto the wafer and further improving product yield.

[0075] (5) The exhaust gas removal method of the present invention can improve product yield by controlling the start time of the exhaust gas removal system (i.e. when the semiconductor equipment is idle or when the end effector senses that a wafer is placed) without affecting the normal processing of the wafer and without adding extra exhaust gas removal time.

[0076] The above description does not provide detailed explanations of the technical aspects of each layer's patterning, etching, etc. However, those skilled in the art should understand that various technical means can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above. Additionally, although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination.

[0077] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. An exhaust gas removal system, characterized in that, It includes multiple micropores on the surface of the end effector arm and an exhaust gas exhaust system communicating with the micropores. The exhaust gas exhaust system includes a multi-branch mixing chamber, a control valve for controlling the opening and closing of the exhaust gas exhaust system, and an exhaust pipeline. The discharge pipeline includes a first discharge pipeline located inside the end effector arm and a second discharge pipeline located outside the end effector arm. The first discharge pipeline is connected to the micropore. One side of the multi-branch mixing cavity is connected to the first discharge pipeline, and the other side of the multi-branch mixing cavity is connected to the second discharge pipeline. The multi-branch mixing chamber is provided with an air outlet and multiple air inlets. The number of air inlets is the same as the number of the first discharge pipeline. The micropores and the air inlets are connected through the first discharge pipeline. The gas drawn in through the multiple micropores is collected in the multi-branch mixing chamber. The vent and the control valve are connected via the second discharge line.

2. The exhaust gas removal system according to claim 1, characterized in that, The diameter of the micropores is less than 0.5 mm.

3. The exhaust gas removal system according to claim 2, characterized in that, The spacing between the micropores is 0.5-1.5 cm.

4. The exhaust gas removal system according to any one of claims 1-3, characterized in that, The region with micropores on the end effector arm is the boundary surface of the end effector arm closest to the edge of the wafer.

5. The exhaust gas removal system according to claim 4, characterized in that, The diameter of the first discharge pipeline is 1-5 mm.

6. The exhaust gas removal system according to claim 4, characterized in that, The end effector arm has a stepped section inside to form an exhaust channel.

7. The exhaust gas removal system according to claim 1 or 2, characterized in that, It also includes a speed controller for adjusting the suction speed, the speed controller being located between the air outlet of the multi-branch mixing chamber and the control valve.

8. A semiconductor device, characterized in that, Includes the exhaust gas removal system as described in any one of claims 1-7.

9. A method for exhaust gas removal, characterized in that, include: When the exhaust gas exhaust system is activated, the exhaust gas is drawn in through multiple micro-holes on the surface of the end effector arm, mixed in the multi-branch mixing chamber, and then enters the atmospheric transmission module through the exhaust pipeline. The wafer in the wafer cassette with the front opening on the end effector arm picks up the wafer and places it on the aligner. After aligning the structure, the end effector arm places the wafer in the pre-vacuum chamber; The end effector arm picks up the wafer from the pre-vacuum chamber and places it in the reaction chamber; After the process in the reaction chamber is completed, the end effector arm places the wafer into the pre-vacuum chamber through the vacuum transfer module; Open the exhaust system to vent the exhaust gas; The end effector arm places the wafer in the pre-vacuum chamber into the empty slot of the buffer position; The end effector picks up the wafer and places it into the original front-opening wafer cassette.

10. The exhaust gas removal method according to claim 9, characterized in that, The exhaust gas venting system should be turned on when the semiconductor equipment is idle.

11. The exhaust gas removal method according to claim 9 or 10, characterized in that, The opening and closing of the exhaust gas removal system is controlled by a control valve.

12. The exhaust gas removal method according to claim 11, characterized in that, This includes activating the exhaust gas system when the end effector arm senses the presence of a wafer.

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