Piezoelectric element, piezoelectric vibrator, manufacturing method thereof, and electronic device

Abstract

The present invention provides a piezoelectric element, a piezoelectric vibrator, a method for manufacturing the same, and an electronic device, and relates to the field of piezoelectric technology. The present invention arranges a piezoelectric structure on a first electrode, and arranges a second electrode on the piezoelectric structure, and the second electrode includes a conductive layer and an anti-oxidation layer sequentially arranged on the piezoelectric structure, and the conductive layer is configured to form a solid solution with the anti-oxidation layer at the breakdown position of the piezoelectric element when a breakdown short circuit occurs in the piezoelectric element, and oxidize to form an insulating material. By using the conductive layer and the anti-oxidation layer as the top electrode of the piezoelectric element, when the piezoelectric structure in the piezoelectric element breaks down and short circuits, the conductive layer melts due to the large amount of heat generated by the short circuit, and the anti-oxidation layer and the conductive layer form a solid solution, and the conductive layer without the anti-oxidation layer undergoes an oxidation reaction to become an insulating material, so that the breakdown position of the piezoelectric element changes from a short circuit to an open circuit, thereby avoiding a breakdown short circuit at a certain position of the piezoelectric element causing the entire piezoelectric element to fail.

Description

Technical Field

[0001] The present invention relates to the field of piezoelectric technology, and in particular to a piezoelectric element, a piezoelectric vibrator, a manufacturing method thereof, and an electronic device. Background Art

[0002] With the rapid advancement of electronic technology, people have higher and higher requirements for the user experience of electronic devices. Most of the current electronic devices can only provide visual and auditory experiences, but cannot bring tactile experiences to users. Therefore, tactile reproduction technology came into being.

[0003] The existing tactile reproduction technology is to set a piezoelectric element in an electronic device to provide tactile feedback through the vibration of the piezoelectric element. However, when the existing piezoelectric element is in use, when the charge distribution on the electrode surface is uneven or the voltage provided is too high, the piezoelectric structure in the piezoelectric element will be broken down, and a short circuit will occur between the first electrode and the second electrode on both sides of the piezoelectric structure, thereby causing the piezoelectric element to fail. Summary of the invention

[0004] The present invention provides a piezoelectric element, a piezoelectric vibrator, a manufacturing method thereof, and an electronic device to solve the existing problem that when the charge distribution on the electrode surface is uneven or the voltage provided is too high, the piezoelectric structure in the piezoelectric element will be broken down, causing the piezoelectric element to fail.

[0005] In order to solve the above problems, the present invention discloses a piezoelectric element, comprising: a first electrode, a piezoelectric structure arranged on the first electrode, and a second electrode arranged on the piezoelectric structure; the second electrode comprises a conductive layer and an anti-oxidation layer arranged in sequence on the piezoelectric structure;

[0006] The conductive layer is configured to form a solid solution with the anti-oxidation layer at the breakdown position of the piezoelectric element and oxidize to generate an insulating material when the piezoelectric element breaks down and short-circuits.

[0007] Optionally, the material of the conductive layer is indium, and the material of the anti-oxidation layer is gold.

[0008] Optionally, in a direction perpendicular to the plane where the first electrode is located, the thickness of the conductive layer is 485 nm to 515 nm, and the thickness of the anti-oxidation layer is 13.5 nm to 16.5 nm.

[0009] Optionally, the second electrode further includes an adhesion layer arranged between the piezoelectric structure and the conductive layer.

[0010] Optionally, the material of the adhesion layer is nickel; and the thickness of the adhesion layer in a direction perpendicular to the plane where the first electrode is located is 9 nm to 11 nm.

[0011] Optionally, the material of the piezoelectric structure is piezoelectric ceramic; and the thickness of the piezoelectric structure in a direction perpendicular to the plane where the first electrode is located is less than 5 μm.

[0012] Optionally, a material of the first electrode is indium tin oxide; and a thickness of the first electrode along a direction perpendicular to a plane where the first electrode is located is 100 nm to 500 nm.

[0013] In order to solve the above problem, the present invention further discloses a piezoelectric vibrator, comprising a substrate and a plurality of the above piezoelectric elements arranged on the substrate.

[0014] Optionally, the piezoelectric vibrator further includes an insulating layer covering the substrate and each of the piezoelectric elements, the insulating layer having a first via hole and a second via hole corresponding to each of the piezoelectric elements;

[0015] The piezoelectric vibrator also includes a routing layer arranged on a side of the insulating layer away from the piezoelectric element, the routing layer includes a first signal line and a second signal line corresponding to each of the piezoelectric elements, each of the first signal lines is connected to the first electrode in the corresponding piezoelectric element through the first via hole, and each of the second signal lines is connected to the second electrode in the corresponding piezoelectric element through the second via hole.

[0016] In order to solve the above problems, the present invention also discloses a method for manufacturing a piezoelectric vibrator, comprising:

[0017] forming a plurality of first electrodes on a substrate;

[0018] forming a piezoelectric structure on each of the first electrodes;

[0019] forming a conductive layer on each of the piezoelectric structures;

[0020] forming an anti-oxidation layer on each of the conductive layers to obtain a plurality of piezoelectric elements;

[0021] Wherein, the conductive layer is configured to form a solid solution with the anti-oxidation layer at the breakdown position of the piezoelectric element and oxidize to generate an insulating material when the piezoelectric element breaks down and short-circuits.

[0022] Optionally, after the step of forming a piezoelectric structure on each of the first electrodes, the method further includes:

[0023] An adhesive layer is formed on each of the piezoelectric structures; and the conductive layer is located on a side of the adhesive layer away from the piezoelectric structure.

[0024] Optionally, after the step of forming an anti-oxidation layer on each of the conductive layers to obtain a plurality of piezoelectric elements, the method further includes:

[0025] forming an insulating layer covering the substrate and each of the piezoelectric elements; the insulating layer having a first via hole and a second via hole corresponding to each of the piezoelectric elements;

[0026] A routing layer is formed on a side of the insulating layer away from the piezoelectric element; the routing layer includes a first signal line and a second signal line corresponding to each of the piezoelectric elements, each of the first signal lines is connected to the first electrode in the corresponding piezoelectric element through the first via hole, and each of the second signal lines is connected to the second electrode in the corresponding piezoelectric element through the second via hole.

[0027] In order to solve the above problem, the present invention also discloses an electronic device, comprising the above piezoelectric vibrator.

[0028] Compared with the prior art, the present invention has the following advantages:

[0029] A piezoelectric structure is arranged on a first electrode, and a second electrode is arranged on the piezoelectric structure, wherein the second electrode includes a conductive layer and an anti-oxidation layer arranged in sequence on the piezoelectric structure, and the conductive layer is configured to form a solid solution with the anti-oxidation layer at the breakdown position of the piezoelectric element when a breakdown short circuit occurs in the piezoelectric element, and oxidize to form an insulating material. By using the conductive layer and the anti-oxidation layer as the top electrode of the piezoelectric element, when a breakdown short circuit occurs in the piezoelectric structure in the piezoelectric element, the conductive layer melts due to a large amount of heat generated by the short circuit, and the anti-oxidation layer and the conductive layer form a solid solution, and the conductive layer without the anti-oxidation layer undergoes an oxidation reaction to become an insulating material, so that the breakdown position of the piezoelectric element changes from a short circuit to an open circuit, while other positions of the piezoelectric element can be used normally, thereby avoiding a breakdown short circuit at a certain position of the piezoelectric element causing the entire piezoelectric element to fail. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic structural diagram of a piezoelectric element according to an embodiment of the present invention is shown;

[0031] Figure 2 A schematic plan view of a piezoelectric vibrator according to an embodiment of the present invention is shown;

[0032] Figure 3 A schematic structural diagram of a piezoelectric vibrator according to an embodiment of the present invention is shown;

[0033] Figure 4 A flow chart of a method for manufacturing a piezoelectric vibrator according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0034] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0035] Embodiment 1

[0036] Reference Figure 1 , showing a schematic structural diagram of a piezoelectric element according to an embodiment of the present invention.

[0037] An embodiment of the present invention provides a piezoelectric element 10, comprising: a first electrode 11, a piezoelectric structure 12 arranged on the first electrode 11, and a second electrode 13 arranged on the piezoelectric structure 12, the second electrode 13 comprising a conductive layer 131 and an anti-oxidation layer 132 sequentially arranged on the piezoelectric structure 12; the conductive layer 131 is configured to form a solid solution with the anti-oxidation layer 132 at the breakdown position of the piezoelectric element 10 and oxidize to generate an insulating material when a breakdown short circuit occurs in the piezoelectric element 10.

[0038] In actual products, the first electrode 11 refers to the bottom electrode of the piezoelectric element 10, and the first electrode 11 can be a planar electrode with a rectangular shape. A piezoelectric structure 12 is arranged on the first electrode 11, and the orthographic projection of the piezoelectric structure 12 on the first electrode 11 is located in the area where the first electrode 11 is located.

[0039] A second electrode 13 is disposed on the side of the piezoelectric structure 12 away from the first electrode 11. The second electrode 13 refers to the top electrode of the piezoelectric element 10. The second electrode 13 is a multi-layer planar electrode, and its shape is also rectangular. Specifically, the second electrode 13 includes a conductive layer 131 disposed on the side of the piezoelectric structure 12 away from the first electrode 11, and an anti-oxidation layer 132 disposed on the side of the conductive layer 131 away from the piezoelectric structure 12, and the orthographic projections of the conductive layer 131 and the anti-oxidation layer 132 on the first electrode 11 both cover the orthographic projection of the piezoelectric structure 12 on the first electrode 11, and the orthographic projections of the conductive layer 131 and the anti-oxidation layer 132 on the first electrode 11 may overlap.

[0040] The conductive layer 131 serves as the main conductive structure in the top electrode, and the conductive layer 131 has a low melting point and is easily oxidized by oxygen, and the material generated by oxidation is an insulating material. Therefore, when the piezoelectric element 10 is not short-circuited, in order to prevent the conductive layer 131 from being oxidized, an anti-oxidation layer 132 is required to be provided. The anti-oxidation layer 132 is used to prevent the conductive layer 131 from being oxidized and becoming an insulating material, thereby ensuring that the top electrode of the piezoelectric element 10 can conduct electricity normally.

[0041] When the charge distribution on the surface of the first electrode 11 and / or the second electrode 13 is uneven or the voltage provided is too high, the piezoelectric structure 12 in the piezoelectric element 10 will be broken down, that is, the piezoelectric element 10 will be short-circuited. At this time, a large amount of heat will be generated at the breakdown position. Since the melting point of the conductive layer 131 is relatively low, the large amount of heat generated by the short circuit will melt the conductive layer 131 at the breakdown position, and the anti-oxidation layer 132 will undergo solid solution and dissolve into the liquid phase of the conductive layer 131, that is, the anti-oxidation layer 132 and the conductive layer 131 will form a solid solution; at this time, the conductive layer 131 will lack the protective effect of the anti-oxidation layer 132, and since the conductive layer 131 is easily oxidized by oxygen, the conductive layer 131 without the anti-oxidation layer 132 will come into contact with oxygen and undergo oxidation reaction to become an insulating material.

[0042] Moreover, when the content of insulating material generated by the oxidation reaction of the conductive layer 131 increases, the corresponding resistance of the conductive layer 131 increases. When the resistance of the conductive layer 131 increases, more heat is generated, causing the conductive layer 131 to continue to undergo oxidation reaction to generate insulating material, thereby changing the breakdown position of the piezoelectric element 10 from a short circuit to an open circuit, and generating a large amount of insulating material. That is, the short circuit position can be burned out through the oxidation reaction of the conductive layer 131, while other positions of the piezoelectric element 10 can be used normally. Therefore, the performance of the piezoelectric element 10 can be restored, thereby avoiding the failure of the entire piezoelectric element 10 due to a breakdown short circuit at a certain position of the piezoelectric element 10.

[0043] It should be noted that the solid solution refers to an alloy phase composed of solute atoms dissolved in the crystal lattice of a metal solvent, that is, a solid solution of one or more solvents.

[0044] In summary, it can be known that the material of the conductive layer 131 needs to meet the characteristics of being conductive, having a low melting point, being easy to undergo an oxidation reaction with oxygen, and the material generated by oxidation being an insulating material, while the material of the anti-oxidation layer 132 needs to meet the characteristics of being conductive and not easy to undergo an oxidation reaction with oxygen. Therefore, in an embodiment of the present invention, indium (In) can be used as the material of the conductive layer 131, and gold (Au) can be used as the material of the anti-oxidation layer 132, that is, the material of the conductive layer 131 is indium, and the material of the anti-oxidation layer 132 is gold.

[0045] The melting point of metallic indium is 156.76°C, which is much lower than the temperature corresponding to the heat generated during a short circuit. In addition, metallic indium is easily oxidized with oxygen to generate indium oxide InO2, which is an insulating material. Gold is conductive and is not easily oxidized with oxygen, thereby protecting the conductive layer 131 and preventing the conductive layer 131 from oxidation when the piezoelectric element 10 is not short-circuited.

[0046] In the embodiment of the present invention, along a direction perpendicular to the plane where the first electrode 11 is located, the thickness of the conductive layer 131 is 485 nm to 515 nm, and the thickness of the anti-oxidation layer 132 is 13.5 nm to 16.5 nm.

[0047] For example, the thickness of the conductive layer 131 can be 490 nm, 500 nm, 510 nm, etc., and the thickness of the conductive layer 131 is preferably 500 nm; the thickness of the anti-oxidation layer 132 can be 14 nm, 15 nm, 16 nm, and the thickness of the anti-oxidation layer 132 is preferably 15 nm.

[0048] Further, such as Figure 1 As shown, the second electrode 13 further includes an adhesive layer 133 disposed between the piezoelectric structure 12 and the conductive layer 131 .

[0049] When the piezoelectric element 10 breaks down and short-circuits, the conductive layer 131 at the breakdown position will melt. In order to prevent the melted conductive layer material from corroding the piezoelectric structure 12, an adhesion layer 133 is added between the piezoelectric structure 12 and the conductive layer 131. The adhesion layer 133 can prevent the melted conductive layer material from corroding the piezoelectric structure 12 and can also serve to adhere the top electrode and the piezoelectric structure 12.

[0050] At this time, the second electrode 13 of the piezoelectric element 10 includes an adhesive layer 133 disposed on the side of the piezoelectric structure 12 away from the first electrode 11, a conductive layer 131 disposed on the side of the adhesive layer 133 away from the piezoelectric structure 12, and an anti-oxidation layer 132 disposed on the side of the conductive layer 131 away from the piezoelectric structure 12. In addition, the orthographic projection of the adhesive layer 133 on the first electrode 11 also covers the orthographic projection of the piezoelectric structure 12 on the first electrode 11, and the orthographic projections of the conductive layer 131, the anti-oxidation layer 132, and the adhesive layer 133 on the first electrode 11 may overlap.

[0051] The material of the adhesion layer 133 is nickel (Ni); the thickness of the adhesion layer 133 is 9 nm to 11 nm in the direction perpendicular to the plane where the first electrode 11 is located. For example, the thickness of the adhesion layer 133 can be 9.5 nm, 10 nm, 10.5 nm, etc., and the thickness of the adhesion layer 133 is preferably 10 nm.

[0052] In the embodiment of the present invention, the material of the piezoelectric structure 12 is piezoelectric ceramic (PZT). For example, the material of the piezoelectric ceramic can be lead zirconate titanate binary piezoelectric ceramic, the chemical formula of which is Pb(Zr 1-x Ti x )O3, belongs to ABO3 perovskite structure.

[0053] The thickness of the piezoelectric structure 12 is less than 5 μm in the direction perpendicular to the plane where the first electrode 11 is located. For example, the thickness of the piezoelectric structure 12 may be 2 μm, 3 μm, 4 μm, etc., and the thickness of the piezoelectric structure 12 is preferably 2 μm.

[0054] In the embodiment of the present invention, the material of the first electrode 11 is indium tin oxide (ITO). Of course, the material of the first electrode 11 may also be other conductive materials, such as the material of the first electrode 11 is metal platinum (Pt).

[0055] Furthermore, the thickness of the first electrode 11 is 100 nm to 500 nm in a direction perpendicular to the plane where the first electrode 11 is located. For example, the thickness of the first electrode 11 may be 200 nm, 300 nm, 400 nm, and the like.

[0056] In an embodiment of the present invention, a conductive layer and an anti-oxidation layer are used as the top electrodes of the piezoelectric element. When a breakdown short circuit occurs in the piezoelectric structure in the piezoelectric element, the conductive layer melts due to the large amount of heat generated by the short circuit, and the anti-oxidation layer and the conductive layer form a solid solution. The conductive layer without the anti-oxidation layer undergoes an oxidation reaction and becomes an insulating material, so that the breakdown position of the piezoelectric element changes from a short circuit to an open circuit, while other positions of the piezoelectric element can be used normally, thereby avoiding a breakdown short circuit at a certain position of the piezoelectric element causing the entire piezoelectric element to fail.

[0057] Embodiment 2

[0058] Reference Figure 2 , showing a plan view of a piezoelectric vibrator according to an embodiment of the present invention, Figure 3 FIG. 1 is a schematic diagram showing the structure of a piezoelectric vibrator according to an embodiment of the present invention. Figure 3 for Figure 2 Cross-sectional view along section AA'.

[0059] The embodiment of the present invention provides a piezoelectric vibrator, including a substrate 20 and a plurality of the above-mentioned piezoelectric elements 10 disposed on the substrate 20 .

[0060] Among them, the substrate 20 can be a flexible substrate or a rigid substrate. For example, the material of the flexible substrate can be PI (Polyimide), PET (Polyethylene Terephthalate) or PDMS (Polydimethylsiloxane), and the rigid substrate can actually be a glass substrate.

[0061] A plurality of piezoelectric elements 10 are disposed on the substrate 20 . Specifically, the substrate 20 is disposed on a side of the first electrode 11 away from the piezoelectric structure 12 , that is, the substrate 20 is directly in contact with the first electrode 11 in the piezoelectric element 10 .

[0062] Furthermore, the piezoelectric vibrator further includes an insulating layer 30 covering the substrate 20 and each piezoelectric element 10, the insulating layer 30 having a first via hole and a second via hole corresponding to each piezoelectric element 10; the piezoelectric vibrator further includes a wiring layer arranged on a side of the insulating layer 30 away from the piezoelectric element 10, the wiring layer including a first signal line corresponding to each piezoelectric element 10 (not shown in FIG. Figure 3 ), each first signal line is connected to the first electrode 11 in the corresponding piezoelectric element 10 through a first via hole, and each second signal line 41 is connected to the second electrode 13 in the corresponding piezoelectric element 10 through a second via hole.

[0063] Among them, the material of the insulating layer 30 is at least one of silicon nitride and silicon oxide, and the insulating layer 30 has multiple first vias and multiple second vias passing through, each piezoelectric element 10 corresponds to a first via and a second via, and the first via can expose the first electrode 11 in the piezoelectric element 10, and the second via can expose the second electrode 13 in the piezoelectric element 10, specifically, the anti-oxidation layer 132 in the second electrode 13 is exposed.

[0064] A plurality of first signal lines and a plurality of second signal lines 41 are arranged on the insulating layer 30, and each piezoelectric element 10 corresponds to a first signal line and a second signal line 41. For each piezoelectric element 10, the corresponding first signal line is connected to the first electrode 11 included therein through a first via hole, and is used to provide a first voltage to the first electrode 11, and the corresponding second signal line 41 is connected to the second electrode 13 included therein through a second via hole, specifically connected to the anti-oxidation layer 132 in the second electrode 13, and the second signal line 41 is used to provide a second voltage to the second electrode 13. The material of the first signal line and the second signal line 41 is a conductive material, specifically, the material of the first signal line and the second signal line 41 is a metal or an alloy, for example, the material of the first signal line and the second signal line 41 is titanium (Ti), copper (Cu) or gold, etc.

[0065] During actual use, a first voltage signal is input to each first signal line to provide a first voltage to the first electrode 11 in each piezoelectric element 10, and a second voltage signal is input to each second signal line 41 to provide a second voltage to the second electrode 13 in each piezoelectric element 10. The first voltage and the second voltage are not equal, and the piezoelectric structure 12 in the piezoelectric element 10 vibrates under the control of the first voltage and the second voltage, thereby achieving tactile reproduction.

[0066] It should be noted that, for any two adjacent piezoelectric elements 10 in the piezoelectric vibrator, the first electrode 11 and the second electrode 12 are disconnected and insulated by the insulating layer 30 , so that the vibration of each piezoelectric element 10 can be controlled individually.

[0067] In an embodiment of the present invention, a conductive layer and an anti-oxidation layer are used as the top electrodes of the piezoelectric element. When a breakdown short circuit occurs in the piezoelectric structure in the piezoelectric element, the conductive layer melts due to the large amount of heat generated by the short circuit, and the anti-oxidation layer and the conductive layer form a solid solution. The conductive layer without the anti-oxidation layer undergoes an oxidation reaction and becomes an insulating material, so that the breakdown position of the piezoelectric element changes from a short circuit to an open circuit, while other positions of the piezoelectric element can be used normally, thereby avoiding a breakdown short circuit at a certain position of the piezoelectric element causing the entire piezoelectric element to fail.

[0068] Embodiment 3

[0069] Reference Figure 4 , shows a flow chart of a method for manufacturing a piezoelectric vibrator according to an embodiment of the present invention, which may specifically include the following steps:

[0070] Step 401: forming a plurality of first electrodes on a substrate.

[0071] In the embodiment of the present invention, first, a substrate 20 is provided, and the substrate 20 may be a flexible substrate or a rigid substrate. Then, a plurality of first electrodes 11 are formed on the substrate 20 by using a patterning process.

[0072] Specifically, a first electrode film is first deposited on the substrate 20, and the first electrode film is subjected to high-temperature annealing in a nitrogen environment to reduce the resistivity of the first electrode film. Then, a photoresist is coated on the first electrode film, the photoresist is exposed and developed, and then the first electrode film in the photoresist removal area is etched and the residual photoresist is removed, thereby forming a plurality of first electrodes 11 on the substrate 20, wherein the material of the first electrode 11 is indium tin oxide.

[0073] Step 402: forming a piezoelectric structure on each of the first electrodes.

[0074] In the embodiment of the present invention, after a plurality of first electrodes 11 are formed on the substrate 20 , a piezoelectric structure 12 is formed on each of the first electrodes 11 .

[0075] Specifically, a piezoelectric film is first formed by dry coating or sol-gel method, and then the structure with the piezoelectric film is placed in an air environment at 550°C to 650°C for high-temperature annealing to achieve the growth of PZT grains, thereby forming a good solid solution phase. Then, a photoresist is coated on the piezoelectric film, the photoresist is exposed and developed, and then the piezoelectric film in the photoresist removal area is etched to form a piezoelectric structure 12 on each first electrode 11.

[0076] Step 403: forming a conductive layer on each of the piezoelectric structures.

[0077] In the embodiment of the present invention, after the piezoelectric structure 12 is formed on each first electrode 11 , a conductive layer 131 is formed on each piezoelectric structure 12 .

[0078] Specifically, a conductive layer film is first deposited, a photoresist is coated on the conductive layer film, the photoresist is exposed and developed, and then the conductive layer film in the photoresist removal area is etched and the residual photoresist is removed, thereby forming a conductive layer 131 on each piezoelectric structure 12.

[0079] Step 404, forming an anti-oxidation layer on each of the conductive layers to obtain a plurality of piezoelectric elements; wherein the conductive layer is configured to form a solid solution with the anti-oxidation layer at the breakdown position of the piezoelectric element and oxidize to generate an insulating material when the piezoelectric element breaks down and short-circuits.

[0080] In the embodiment of the present invention, after forming the conductive layer 131 on each piezoelectric structure 12 , an anti-oxidation layer 132 is formed on each conductive layer 131 , thereby manufacturing a plurality of piezoelectric elements 10 .

[0081] Specifically, an anti-oxidation layer film is first deposited, a photoresist is coated on the anti-oxidation layer film, the photoresist is exposed and developed, and then the anti-oxidation layer film in the photoresist removal area is etched and the residual photoresist is removed, thereby forming an anti-oxidation layer 132 on each conductive layer 131.

[0082] It should be noted that after the piezoelectric structure 12 is formed on each first electrode 11, a conductive layer film and an anti-oxidation layer film may be deposited in sequence, a photoresist may be coated on the anti-oxidation layer film, the photoresist may be exposed and developed, and then the anti-oxidation layer film and the conductive layer film in the photoresist removal area may be etched, and the residual photoresist may be removed, thereby forming a conductive layer 131 on each piezoelectric structure 12 and an anti-oxidation layer 132 on each conductive layer 131.

[0083] Among them, the material of the conductive layer 131 is indium, and the material of the anti-oxidation layer 132 is gold; the conductive layer 131 is configured to form a solid solution with the anti-oxidation layer 132 at the breakdown position of the piezoelectric element 10 when a short circuit occurs in the piezoelectric element 10, and oxidize to generate an insulating material.

[0084] In an optional implementation manner of the present invention, after step 402, the method further includes: forming an adhesion layer on each of the piezoelectric structures; and the conductive layer is located on a side of the adhesion layer away from the piezoelectric structure.

[0085] After forming the piezoelectric structure 12 on each first electrode 11, an adhesion layer 133 is first formed on each piezoelectric structure 12, and the material of the adhesion layer 133 is nickel. Specifically, an adhesion layer film is first deposited, a photoresist is coated on the adhesion layer film, the photoresist is exposed and developed, and then the adhesion layer film in the photoresist removal area is etched, and the residual photoresist is removed, so as to form an adhesion layer 133 on each piezoelectric structure 12; then, a conductive layer 131 is formed on each adhesion layer 133 through a single patterning process, and at this time, the conductive layer 131 is located on the side of the adhesion layer 133 away from the piezoelectric structure 12; finally, an anti-oxidation layer 132 is formed on each conductive layer 131 through a single patterning process.

[0086] At this time, the second electrode 13 includes an adhesion layer 133, a conductive layer 131 and an anti-oxidation layer 132 which are stacked on the side of the piezoelectric structure 12 away from the first electrode 11, and the adhesion layer 133, the conductive layer 131 and the anti-oxidation layer 132 are arranged in sequence away from the first electrode 11 in a direction perpendicular to the plane where the first electrode 11 is located.

[0087] It should be noted that when the second electrode 13 includes an adhesion layer 133, a conductive layer 131 and an anti-oxidation layer 132 that are stacked, the adhesion layer film, the conductive layer film and the anti-oxidation layer film can also be directly deposited in sequence, a photoresist is coated on the anti-oxidation layer film, the photoresist is exposed and developed, and then the anti-oxidation layer film, the conductive layer film and the adhesion layer film in the photoresist removal area are etched, and the residual photoresist is removed, thereby forming an adhesion layer 133 on each piezoelectric structure 12, forming a conductive layer 131 on each adhesion layer 133, and forming an anti-oxidation layer 132 on each conductive layer 131.

[0088] In an optional embodiment of the present invention, after step 404, it also includes: forming an insulating layer covering the substrate and each of the piezoelectric elements; the insulating layer has a first via hole and a second via hole corresponding to each of the piezoelectric elements; forming a routing layer on a side of the insulating layer away from the piezoelectric element; the routing layer includes a first signal line and a second signal line corresponding to each of the piezoelectric elements, each of the first signal lines is connected to the first electrode in the corresponding piezoelectric element through the first via hole, and each of the second signal lines is connected to the second electrode in the corresponding piezoelectric element through the second via hole.

[0089] After a plurality of piezoelectric elements 10 are manufactured on the substrate 20, an insulating layer 30 is formed to cover the substrate 20 and each piezoelectric element 10, and the insulating layer 30 has a first via hole and a second via hole corresponding to each piezoelectric element 10. Specifically, the insulating layer 30 is first deposited, a photoresist is coated on the insulating layer 30, the photoresist is exposed and developed, and then the insulating layer 30 at the photoresist removal area is etched, and the residual photoresist is removed, thereby forming the first via hole and the second via hole penetrating the insulating layer 30.

[0090] After forming an insulating layer 30 covering the substrate 20 and each piezoelectric element 10, a wiring layer is formed on the insulating layer 30 by a patterning process. The wiring layer includes a first signal line (not shown) corresponding to each piezoelectric element 10. Figure 3 ), and a second signal line 41, each first signal line is connected to the first electrode 11 in the corresponding piezoelectric element 10 through a first via hole, for providing a first voltage to the first electrode 11, and each second signal line 41 is connected to the second electrode 13 in the corresponding piezoelectric element 10 through a second via hole, for providing a second voltage to the second electrode 13.

[0091] In addition, after forming a plurality of piezoelectric elements 10 on the substrate 20 , the piezoelectric elements 10 need to be polarized to increase the piezoelectric constant of the piezoelectric structure 12 in the piezoelectric element 10 so that the piezoelectric element 10 has good piezoelectric characteristics.

[0092] It should be noted that the piezoelectric element 10 can be polarized before or after the insulating layer 30 and the wiring layer are formed. The embodiment of the present invention does not limit the specific steps of the polarization treatment.

[0093] In an embodiment of the present invention, a conductive layer and an anti-oxidation layer are used as the top electrodes of the piezoelectric element. When a breakdown short circuit occurs in the piezoelectric structure in the piezoelectric element, the conductive layer melts due to the large amount of heat generated by the short circuit, and the anti-oxidation layer and the conductive layer form a solid solution. The conductive layer without the anti-oxidation layer undergoes an oxidation reaction and becomes an insulating material, so that the breakdown position of the piezoelectric element changes from a short circuit to an open circuit, while other positions of the piezoelectric element can be used normally, thereby avoiding a breakdown short circuit at a certain position of the piezoelectric element causing the entire piezoelectric element to fail.

[0094] Embodiment 4

[0095] An embodiment of the present invention further provides an electronic device, comprising the above-mentioned piezoelectric vibrator.

[0096] For the specific description of the piezoelectric vibrator, reference may be made to the description of the second and third embodiments, which will not be described in detail in the embodiment of the present invention.

[0097] In an actual product, the electronic device may be a display device, which includes a display panel and the above-mentioned piezoelectric vibrator. The piezoelectric vibrator may be arranged on the light-emitting side of the display panel, so that the display device can realize both the display function and the tactile reproduction function.

[0098] Of course, the electronic device according to the embodiment of the present invention is not limited to the display device, and may also be any product or component having a tactile reproduction function.

[0099] In an embodiment of the present invention, a conductive layer and an anti-oxidation layer are used as the top electrodes of the piezoelectric element. When a breakdown short circuit occurs in the piezoelectric structure in the piezoelectric element, the conductive layer melts due to the large amount of heat generated by the short circuit, and the anti-oxidation layer and the conductive layer form a solid solution. The conductive layer without the anti-oxidation layer undergoes an oxidation reaction and becomes an insulating material, so that the breakdown position of the piezoelectric element changes from a short circuit to an open circuit, while other positions of the piezoelectric element can be used normally, thereby avoiding a breakdown short circuit at a certain position of the piezoelectric element causing the entire piezoelectric element to fail.

[0100] For the above-mentioned method embodiments, for the sake of simplicity, they are all described as a series of action combinations, but those skilled in the art should know that the present invention is not limited by the order of the actions described, because according to the present invention, some steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also know that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present invention.

[0101] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0102] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0103] The piezoelectric element, piezoelectric vibrator, manufacturing method thereof, and electronic device provided by the present invention are introduced in detail above. Specific examples are used in this article to illustrate the principle and implementation mode of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation mode and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A piezoelectric element, characterized in that: include: a first electrode, a piezoelectric structure disposed on the first electrode, and a second electrode disposed on the piezoelectric structure; The second electrode comprises a conductive layer and an anti-oxidation layer sequentially arranged on the piezoelectric structure; the orthographic projection of the piezoelectric structure on the first electrode is located in the region where the first electrode is located; The conductive layer is configured to form a solid solution with the anti-oxidation layer at the breakdown position of the piezoelectric element and oxidize to generate an insulating material when the piezoelectric element breaks down and short-circuits.

2. The piezoelectric element according to claim 1, wherein The material of the conductive layer is indium, and the material of the anti-oxidation layer is gold.

3. The piezoelectric element according to claim 1, wherein In a direction perpendicular to the plane where the first electrode is located, the thickness of the conductive layer is 485 nm to 515 nm, and the thickness of the anti-oxidation layer is 13.5 nm to 16.5 nm.

4. The piezoelectric element according to claim 1, wherein: The second electrode further includes an adhesion layer disposed between the piezoelectric structure and the conductive layer.

5. The piezoelectric element according to claim 4, characterized in that The material of the adhesion layer is nickel; along a direction perpendicular to the plane where the first electrode is located, the thickness of the adhesion layer is 9 nm to 11 nm.

6. The piezoelectric element according to claim 1, wherein: The material of the piezoelectric structure is piezoelectric ceramic; along a direction perpendicular to the plane where the first electrode is located, the thickness of the piezoelectric structure is less than 5 μm.

7. The piezoelectric element according to claim 1, wherein: The material of the first electrode is indium tin oxide; along a direction perpendicular to the plane where the first electrode is located, the thickness of the first electrode is 100 nm to 500 nm.

8. A piezoelectric vibrator, characterized in that: The invention comprises a substrate and a plurality of piezoelectric elements according to any one of claims 1 to 7 arranged on the substrate.

9. The piezoelectric vibrator according to claim 8, wherein: The piezoelectric vibrator further includes an insulating layer covering the substrate and each of the piezoelectric elements, the insulating layer having a first via hole and a second via hole corresponding to each of the piezoelectric elements; The piezoelectric vibrator also includes a routing layer arranged on a side of the insulating layer away from the piezoelectric element, the routing layer includes a first signal line and a second signal line corresponding to each of the piezoelectric elements, each of the first signal lines is connected to the first electrode in the corresponding piezoelectric element through the first via hole, and each of the second signal lines is connected to the second electrode in the corresponding piezoelectric element through the second via hole.

10. A method for manufacturing a piezoelectric vibrator, characterized in that: include: forming a plurality of first electrodes on a substrate; forming a piezoelectric structure on each of the first electrodes; forming a conductive layer on each of the piezoelectric structures; forming an anti-oxidation layer on each of the conductive layers to obtain a plurality of piezoelectric elements; Wherein, the conductive layer is configured to form a solid solution with the anti-oxidation layer at the breakdown position of the piezoelectric element and oxidize to generate an insulating material when the piezoelectric element breaks down and short-circuits.

11. The method according to claim 10, characterized in that After the step of forming a piezoelectric structure on each of the first electrodes, the method further includes: An adhesive layer is formed on each of the piezoelectric structures; and the conductive layer is located on a side of the adhesive layer away from the piezoelectric structure.

12. The method according to claim 10, characterized in that After the step of forming an anti-oxidation layer on each of the conductive layers to obtain a plurality of piezoelectric elements, the method further includes: forming an insulating layer covering the substrate and each of the piezoelectric elements; the insulating layer having a first via hole and a second via hole corresponding to each of the piezoelectric elements; A routing layer is formed on a side of the insulating layer away from the piezoelectric element; the routing layer includes a first signal line and a second signal line corresponding to each of the piezoelectric elements, each of the first signal lines is connected to the first electrode in the corresponding piezoelectric element through the first via hole, and each of the second signal lines is connected to the second electrode in the corresponding piezoelectric element through the second via hole.

13. An electronic device, characterized in that: Includes the piezoelectric vibrator according to claim 8 or 9.

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