Insulating plate and substrate processing apparatus including the same

Abstract

A substrate processing apparatus using plasma is provided, which can control etching rate using an insulating plate provided with an air gap. The substrate processing apparatus includes a chamber including a processing space for processing a substrate using plasma, and a support module located within the processing space and for supporting the substrate, wherein the support module includes a support plate for receiving high-frequency power, and an insulating plate disposed at a lower portion of the support plate and including a first surface facing the support plate, wherein at least one first groove is formed on the first surface.

Description

Technical Field

[0001] The present invention relates to an insulating board and a substrate processing apparatus including the insulating board. Background Technology

[0002] In the manufacture of semiconductor devices or display devices, various plasma-based processes (e.g., etching, ashing, ion implantation, cleaning, etc.) can be used. Plasma-based substrate processing devices can be categorized into capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) types based on the plasma generation method. In a CCP-type device, two electrodes are arranged facing each other in a chamber, and plasma is generated by applying a radio frequency (RF) signal to either or both electrodes to create an electric field within the chamber. Conversely, in an ICP-type device, one or more coils are positioned within the chamber, and plasma is generated by inducing an electromagnetic field within the chamber by applying an RF signal to the coils. Summary of the Invention

[0003] Furthermore, in ICP-type substrate processing apparatuses, an insulating plate (or ceramic isolator) is arranged at the bottom of the electrostatic chuck used to place the substrate. The insulating plate prevents bias power loss to the bottom of the substrate processing apparatus. However, existing insulating plates rely on the inherent dielectric constant (ε) of the material. r The reactance (X) that affects the bias power loss is changed by using a capacitor (C). Since the envelope voltage (Vrms) is determined based on the reactance (X), the improvement of the etching rate is limited.

[0004] The technical problem to be solved by the present invention is to provide a substrate processing apparatus that utilizes plasma, which can control the etching rate by using an insulating plate provided with an air gap.

[0005] Another technical problem to be solved by the present invention is to provide an insulating plate with an air gap for use in a substrate processing apparatus utilizing plasma.

[0006] The technical problems of this invention are not limited to those described above. Those skilled in the art will clearly understand other technical problems not mentioned below through the following description.

[0007] One aspect of the substrate processing apparatus of the present invention for solving the above-mentioned technical problems includes: a chamber including a processing space for processing a substrate using plasma; and a support module located within the processing space and for supporting the substrate, wherein the support module includes: a support plate for receiving high-frequency power; and an insulating plate disposed below the support plate and including a first surface facing the support plate, wherein at least one first groove is formed on the first surface.

[0008] Another aspect of the substrate processing apparatus of the present invention for solving the above-mentioned technical problems includes: a housing, the upper surface of which is open and includes a processing space; a sealing cover covering the upper surface of the housing and including a gas supply port for supplying process gas into the processing space; an antenna disposed on the sealing cover, in the form of a coil, and for receiving a first high-frequency power to excite the process gas into plasma; and a support module located within the processing space and for supporting the substrate, wherein the support module includes: a support plate for receiving a second high-frequency power to guide the plasma supply in the direction of the substrate; an insulating plate disposed below the support plate; and a lower cover disposed below the insulating plate, wherein the insulating plate includes a first surface facing the support plate and a second surface facing the lower cover, and at least one of the first surface and the second surface has at least one groove formed thereon.

[0009] An aspect of the insulating plate of the present invention for solving the above-mentioned technical problems is used in a substrate processing apparatus for processing a substrate using plasma, and includes: a ceramic body having a cylindrical shape including an upper surface and a lower surface; a through hole penetrating the center of the body; and at least one groove formed on at least one of the upper surface and the lower surface to form an air gap.

[0010] Specific details of other embodiments are included in the detailed description and accompanying drawings. Attached Figure Description

[0011] Figure 1 This is a cross-sectional view used to illustrate a substrate processing apparatus according to some embodiments of the present invention.

[0012] Figure 2 This is a perspective view illustrating an insulating plate according to a first embodiment of the present invention.

[0013] Figure 3 It is along Figure 2 The sectional view taken from line III-III.

[0014] Figure 4 This is a perspective view illustrating an insulating plate according to a second embodiment of the present invention.

[0015] Figure 5 This is a perspective view illustrating an insulating plate according to a third embodiment of the present invention.

[0016] Figure 6 It is along Figure 5 A sectional view taken from line VI-VI.

[0017] Figure 7 This is a perspective view illustrating the insulating plate according to the fourth embodiment of the present invention.

[0018] Figure 8 This is a perspective view illustrating an insulating plate according to a fifth embodiment of the present invention.

[0019] Figure 9 This is a cross-sectional view used to illustrate the insulating plate according to the sixth embodiment of the present invention.

[0020] Figure 10 This is a cross-sectional view used to illustrate the insulating plate according to the seventh embodiment of the present invention.

[0021] Figure 11 This is a diagram illustrating the effects of a substrate processing apparatus according to some embodiments of the present invention. Detailed Implementation

[0022] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, as well as methods for achieving these advantages and features, will be explained below with reference to the accompanying drawings. Figure 1 The invention becomes clear from the detailed description of the embodiments. However, the invention is not limited to the embodiments disclosed below, but can be implemented in many different forms. These embodiments are provided only to make the disclosure of the invention complete and to fully inform those skilled in the art of the scope of the invention, which is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0023] To readily describe the relationship between one element or component and another, as shown in the figure, spatial relative terms such as "below," "below," "lower," "above," and "upper" can be used. It should be understood that, in addition to the orientation shown in the figure, spatial relative terms also include terms indicating the different orientations of the elements during use or operation. For example, when the element shown in the figure is flipped, an element described as "below" or "below" of another element may be located "above" of that element. Therefore, the exemplary term "below" can include both "below" and "above" orientations. An element may also be oriented in another direction, thus allowing the spatial relative terms to be interpreted according to orientation.

[0024] Although the terms "first," "second," etc., are used to describe various elements, constituent elements, and / or parts, these elements, constituent elements, and / or parts are obviously not limited by these terms. These terms are only used to distinguish one element, constituent element, and / or part from another element, constituent element, and / or part. Therefore, the first element, first constituent element, or first part mentioned below can obviously also be a second element, second constituent element, or second part within the technical concept of the present invention.

[0025] Figure 1 This is a cross-sectional view used to illustrate a substrate processing apparatus according to some embodiments of the present invention. Figure 1 The illustration exemplarily shows a substrate processing apparatus that generates plasma using inductively coupled plasma (ICP), but is not limited thereto.

[0026] Reference Figure 1 According to some embodiments of the present invention, the substrate processing apparatus 10 utilizes plasma to process the substrate W. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. The substrate processing apparatus 10 may include a process chamber 100, a substrate support unit 200, a gas supply unit 300, a plasma generation unit 400, and a baffle unit 500.

[0027] The process chamber 100 provides space for performing substrate processing processes. The process chamber 100 includes a housing 110, a sealing cover 120, and a gasket 130.

[0028] The housing 110 has an open space on its upper surface. The internal space of the housing 110 is provided as a processing space for performing substrate processing processes. The housing 110 is made of metal. The housing 110 may be made of aluminum. The housing 110 may be grounded. An exhaust port 102 is formed on the bottom surface of the housing 110. The exhaust port 102 is connected to an exhaust line 151. Reaction byproducts generated during the process and gases remaining in the internal space of the housing 110 can be discharged to the outside through the exhaust line 151. Through the venting process, the internal pressure of the housing 110 is reduced to a predetermined pressure.

[0029] The sealing cap 120 covers the open upper surface of the housing 110. The sealing cap 120 is configured in the shape of a plate and seals the internal space of the housing 110. The sealing cap 120 may include a dielectric substance window.

[0030] A gasket 130 is disposed inside the housing 110. The gasket 130 is formed within the space between the upper and lower surfaces. The gasket 130 may be cylindrical. The gasket 130 may have a radius corresponding to the inner surface of the housing 110. The gasket 130 is disposed along the inner surface of the housing 110. A support ring 131 is formed at the upper end of the gasket 130. The support ring 131 is configured as an annular plate and protrudes outward along the circumference of the gasket 130. The support ring 131 is located at the upper end of the housing 110 and supports the gasket 130. The gasket 130 may be made of the same material as the housing 110. That is, the gasket 130 may be made of aluminum. The gasket 130 protects the inner surface of the housing 110. During the process gas ignition, an arc discharge may occur inside the process chamber 100. Arc discharge can damage surrounding equipment. Gasket 130 protects the inner surface of housing 110, thereby preventing damage to the inner surface of housing 110 due to arc discharge. Furthermore, it prevents impurities generated during substrate processing from depositing on the inner wall of housing 110. Compared to housing 110, gasket 130 is inexpensive and easy to replace. Therefore, when gasket 130 is damaged due to arc discharge, the operator can replace it with a new gasket 130.

[0031] The substrate support unit 200 is located inside the housing 110. The substrate support unit 200 supports the substrate W. The substrate support unit 200 may include an electrostatic chuck 210 that uses electrostatic force to attract the substrate W. Alternatively, the substrate support unit 200 may also support the substrate W in various ways, such as mechanical clamping. Hereinafter, the support unit 200 including the electrostatic chuck 210 will be described.

[0032] The substrate support unit 200 includes an electrostatic chuck 210, an insulating plate 250, and a lower cover 270. The substrate support unit 200 can be separated upward from the bottom surface of the housing 110 inside the process chamber 100.

[0033] The electrostatic chuck 210 includes a dielectric plate 220, a lower electrode 223, a heater 225, a support plate 230, and a focusing ring 240.

[0034] The dielectric plate 220 is located at the upper end of the electrostatic chuck 210. The dielectric plate 220 is configured as a disk-shaped dielectric substance. The substrate W is placed on the upper surface of the dielectric plate 220. The upper surface of the dielectric plate 220 has a radius smaller than that of the substrate W. Therefore, the edge region of the substrate W is located on the outer side of the dielectric plate 220. A first supply flow path 221 is formed in the dielectric plate 220. The first supply flow path 221 extends from the upper surface of the dielectric plate 220 to the bottom surface. A plurality of first supply flow paths 221 are spaced apart from each other and are provided as channels for supplying heat transfer medium to the bottom surface of the substrate W.

[0035] A lower electrode 223 and a heater 225 are embedded inside the dielectric plate 220. The lower electrode 223 is located above the heater 225. The lower electrode 223 is electrically connected to a first lower power supply 223a. The first lower power supply 223a includes a DC power supply. A switch 223b is provided between the lower electrode 223 and the first lower power supply 223a. The lower electrode 223 can be electrically connected to the first lower power supply 223a by turning the switch 223b on / off. When the switch 223b is on, a DC current is applied to the lower electrode 223. Due to the current applied to the lower electrode 223, an electrostatic force acts between the lower electrode 223 and the substrate W, and the substrate W is attracted to the dielectric plate 220 by the electrostatic force.

[0036] Heater 225 is electrically connected to a second lower power supply 225a. Heater 225 generates heat by resisting the current applied from the second lower power supply 225a. The generated heat is transferred to substrate W through dielectric plate 220. Substrate W is maintained at a predetermined temperature by the heat generated in heater 225. Heater 225 includes a spiral-shaped coil.

[0037] The support plate 230 is located below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the upper surface of the support plate 230 can be bonded together with an adhesive. The support plate 230 can be made of aluminum. A step can be formed on the upper surface of the support plate 230, such that the central region of the upper surface of the support plate 230 is higher than the edge region. The central region of the upper surface of the support plate 230 has an area corresponding to the bottom surface of the dielectric plate 220 and is bonded to the bottom surface of the dielectric plate 220. A first circulation path 231, a second circulation path 232, and a second supply path 233 are formed in the support plate 230.

[0038] The support plate 230 may include a metal plate. The support plate 230 can be connected to a high-frequency power supply 620 via a high-frequency transmission line 610. Power can be applied from the high-frequency power supply 620 to the support plate 230, allowing the plasma generated within the processing space to be smoothly supplied to the substrate W. That is, the support plate 230 can function as an electrode. Furthermore, although in Figure 1 In this embodiment, the substrate processing apparatus 10 is configured as an ICP type, but is not limited thereto. According to one embodiment of the present invention, the substrate processing apparatus 10 can be configured as a CCP type. When the substrate processing apparatus 10 is configured as a CCP type, the high-frequency transmission line 610 can be connected to the lower electrode for generating plasma to apply power from the high-frequency power supply 620 to the lower electrode.

[0039] The first circulation path 231 is configured as a channel for the circulation of the heat transfer medium. The first circulation path 231 may be formed in a spiral shape inside the support plate 230. Alternatively, the first circulation path 231 may be arranged as annular paths with different radii but the same center. The individual first circulation paths 231 may be interconnected. The first circulation paths 231 are formed at the same height.

[0040] The second circulation path 232 is configured as a channel for the circulation of cooling fluid. The second circulation path 232 may be formed in a spiral shape inside the support plate 230. Furthermore, the second circulation paths 232 may be arranged as annular paths with different radii but sharing the same center. Each of the second circulation paths 232 may be interconnected. The second circulation path 232 may have a larger cross-sectional area than the first circulation path 231. The second circulation paths 232 are formed at the same height. The second circulation path 232 may be located below the first circulation path 231.

[0041] The second supply flow path 233 extends upward from the first circulation flow path 231 and is disposed on the upper surface of the support plate 230. The number of second supply flow paths 233 corresponds to that of the first supply flow path 221, and connects the first supply flow path 221 and the first circulation flow path 231.

[0042] The first circulation path 231 is connected to the heat transfer medium storage unit 231a via the heat transfer medium supply line 231b. The heat transfer medium storage unit 231a stores the heat transfer medium. The heat transfer medium includes an inert gas. According to an embodiment, the heat transfer medium may include helium (He). Helium is supplied to the first circulation path 231 via the heat transfer medium supply line 231b, and then sequentially supplied to the bottom surface of the substrate W via the second supply path 233 and the first supply path 221. The helium acts as a medium for transferring heat from the plasma to the substrate W to the electrostatic chuck 210.

[0043] The second circulation path 232 is connected to the cooling fluid storage section 232a via the cooling fluid supply line 232c. The cooling fluid storage section 232a stores cooling fluid. A cooler 232b may be provided in the cooling fluid storage section 232a. The cooler 232b cools the cooling fluid to a predetermined temperature. In contrast, the cooler 232b may be provided on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation path 232 via the cooling fluid supply line 232c circulates along the second circulation path 232, thereby cooling the support plate 230. The support plate 230 cools itself while simultaneously cooling the dielectric plate 220 and the substrate W, thereby maintaining the substrate W at a predetermined temperature.

[0044] A focusing ring 240 is disposed at the edge region of the electrostatic chuck 210. The focusing ring 240 has an annular shape and is disposed along the circumference of the dielectric plate 220. A step can be formed on the upper surface of the focusing ring 240, such that the outer side 240a of the upper surface of the focusing ring 240 is higher than the inner side 240b. The inner side 240b of the upper surface of the focusing ring 240 is at the same height as the upper surface of the dielectric plate 220. The inner side 240b of the upper surface of the focusing ring 240 supports the edge region of the substrate W located on the outer side of the dielectric plate 220. The outer side 240a of the focusing ring 240 is configured to surround the edge region of the substrate W. The focusing ring 240 concentrates plasma in the region facing the substrate W in the process chamber 100.

[0045] An insulating plate 250 is located below the support plate 230. The insulating plate 250 has a cross-sectional area corresponding to that of the support plate 230. The insulating plate 250 is located between the support plate 230 and the lower cover 270. The insulating plate 250 is made of an insulating material and electrically insulates the support plate 230 from the lower cover 270.

[0046] The magnitude of the reactance (X), which affects power loss, can be controlled by forming grooves on one or both surfaces of the insulating plate 250 to create an air gap. This will be utilized later. Figures 2 to 10 The specific structure of this insulating board 250 is described.

[0047] The lower cover 270 is located at the lower end of the substrate support unit 200. The lower cover 270 is spaced upward from the bottom surface of the housing 110. A space with an open upper surface is formed inside the lower cover 270. The upper surface of the lower cover 270 is covered by an insulating plate 250. Therefore, the outer radius of the cross-section of the lower cover 270 can be the same as the outer radius of the insulating plate 250. A lifting pin module (not shown) for moving the substrate W to be transported from the external transport member to the electrostatic chuck 210 can be located in the internal space of the lower cover 270.

[0048] The lower cover 270 has a connecting member 273. The connecting member 273 connects the outer surface of the lower cover 270 and the inner wall of the housing 110. Multiple connecting members 273 can be arranged at certain intervals on the outer surface of the lower cover 270. The connecting member 273 supports the substrate support unit 200 inside the process chamber 100. In addition, the connecting member 273 is connected to the inner wall of the housing 110, so that the lower cover 270 is electrically grounded. The first power line 223c connected to the first lower power supply 223a, the second power line 225c connected to the second lower power supply 225a, the heat transfer medium supply line 231b connected to the heat transfer medium storage unit 231a, and the cooling fluid supply line 232c connected to the cooling fluid storage unit 232a extend to the inner side of the lower cover 270 through the internal space of the connecting member 273.

[0049] The gas supply unit 300 supplies process gas to the interior of the process chamber 100. The gas supply unit 300 includes a gas supply nozzle 310, a gas supply line 320, and a gas storage unit 330. The gas supply nozzle 310 is located at the center of the sealing cover 120. An injection port is formed on the bottom surface of the gas supply nozzle 310. The injection port is located at the lower part of the sealing cover 120 and supplies process gas to the processing space inside the process chamber 100. The gas supply line 320 connects the gas supply nozzle 310 and the gas storage unit 330. The gas supply line 320 supplies the process gas stored in the gas storage unit 330 to the gas supply nozzle 310. A valve 321 is provided on the gas supply line 320. The valve 321 opens or closes the gas supply line 320 and regulates the flow rate of the process gas supplied through the gas supply line 320.

[0050] The plasma generation unit 400 excites the process gas in the process chamber 100 into a plasma state. According to one embodiment of the present invention, the plasma generation unit 400 may be configured as an ICP type.

[0051] The plasma generation unit 400 may include a high-frequency power supply 420, a first antenna 411, a second antenna 413, and a power distributor 430. The high-frequency power supply 420 supplies high-frequency signals (i.e., RF signals).

[0052] The first antenna 411 and the second antenna 413 are connected in series with the high-frequency power supply 420. The first antenna 411 and the second antenna 413 can each be configured as coils wound into multiple turns. The first antenna 411 and the second antenna 413 are electrically connected to the high-frequency power supply 420 to receive RF power. The power distributor 430 distributes the power supplied from the high-frequency power supply 420 to the first antenna 411 and the second antenna 413.

[0053] The first antenna 411 and the second antenna 413 can be arranged at a position opposite to the substrate W. For example, the first antenna 411 and the second antenna 413 can be disposed in the upper part of the process chamber 100. The first antenna 411 and the second antenna 413 can be configured as a ring. In this case, the radius of the first antenna 411 can be smaller than the radius of the second antenna 413. Furthermore, the first antenna 411 can be located on the upper inner side of the process chamber 100, and the second antenna 413 can be located on the upper outer side of the process chamber 100.

[0054] According to an embodiment, the first antenna 411 and the second antenna 413 described above can also be arranged on the side of the process chamber 100. According to an embodiment, either the first antenna 411 or the second antenna 413 can be arranged on the upper part of the process chamber 100, and the other can be arranged on the side of the process chamber 100. As long as multiple antennas generate plasma in the process chamber 100, the position of the coil is not limited.

[0055] The first antenna 411 and the second antenna 413 can induce a time-varying electromagnetic field in the chamber by receiving RF power from the high-frequency power supply 420, thereby exciting the process gas supplied to the process chamber 100 into plasma.

[0056] A baffle unit 500 is located between the inner wall of the housing 110 and the substrate support unit 200. The baffle unit 500 includes a baffle with a through-hole. The baffle is annular. Process gas supplied to the housing 110 passes through the through-hole of the baffle and is discharged through the exhaust port 102. The flow of the process gas can be controlled according to the shape of the baffle and the shape of the through-hole.

[0057] Figure 2 This is a perspective view illustrating an insulating plate according to a first embodiment of the present invention. Figure 3 It is along Figure 2 The sectional view taken from line III-III.

[0058] Reference Figure 2 and Figure 3 The insulating plate 250 includes a first surface UF and a second surface DF facing each other, and has a cylindrical shape and includes a body made of ceramic material. The first surface UF faces the support plate ( Figure 1 230), and the second surface DF faces the lower cover 270.

[0059] At least one first groove R1 is formed on the first surface UF, and at least one second groove R2 is also formed on the second surface DF. When the grooves R1 and R2 are filled with air, an air gap is formed between the first surface UF and the support plate 230, and between the second surface DF and the lower cover 270.

[0060] Furthermore, the insulating plate 250 includes a first region (or edge region) bulk2 and a second region (or center region) air,bulk located inside the first region bulk2. The upper surface 256 of the first region bulk2 contacts and supports the support plate 230. At least one groove R1, R2 may be formed in the second region air,bulk.

[0061] Furthermore, as described above, the support plate 230 is connected via a high-frequency transmission line (see reference). Figure 1 The high-frequency transmission line 610 is connected to the high-frequency power supply 620. More specifically, the rod connected to the high-frequency transmission line 610 passes through the insulating plate 250, and the rod supplies high-frequency power to the support plate 230. Therefore, a through hole 251 is arranged in the second region air,bulk of the insulating plate 250, through which the rod for supplying high-frequency power passes.

[0062] At least one first groove R1 and a second groove R2 formed on the first surface UF and the second surface DF can reduce the total capacitance C of the insulating plate 250. total .

[0063] More specifically, referring to mathematical formula 1, C total C represents the total capacitance of the 250mm insulating board. bulk2 The capacitance of bulk2 represents the first region (or edge region), and This refers to the capacitance of the second region (or central region) air, bulk. C air Let C represent the capacitance of the first groove R1 and the second groove R2 in the second region air,bulk, and C air,bulk This represents the capacitance of the area within the second region air,bulk, excluding the first recess R1 and the second recess R2. Furthermore, A bulk2 Let A represent the area of ​​the first region (or edge region) bulk2, and A air,bulk This represents the area of ​​the second region (or central region), air,bulk. T bulk T represents the total thickness of the 250mm insulating board. air T represents the total thickness of the first groove R1 and the second groove R2 (i.e., T). air1 +T air2 ), T air,bulk Indicates from Tbulk Subtract T air The thickness, ε r Let ε0 represent the dielectric constant of the material of insulating plate 250, and let ε0 represent the dielectric constant of air.

[0064] [Mathematical Expression 1]

[0065]

[0066] Using mathematical formula 1, we can determine the total capacitance (C) of the insulating plate 250 with air gap. total The total capacitance is less than that of an insulating plate with no air gap (250). For example, when T... bulk It is 34mm, T air For 1mm, A air,bulk It is 57,427 mm. 2 Total area A air,bulk +A bulk2 It is 93,992 mm 2 At that time, the total capacitance C of the insulating plate 250 with air gap can be confirmed. total The total capacitance C of the insulating board without air gap is 250. total It decreases by approximately 13.2%. When the total capacitance C total When the reactance (X) decreases, the reactance (X) increases. As the reactance (X) increases, the plasma envelope voltage Vrms increases, and the etching rate improves.

[0067] In summary, the first groove R1 and the second groove R2 are formed in the insulating plate 250, thereby creating an air gap. The total capacitance C can be controlled by adjusting the shape, size, and thickness of the first groove R1 and the second groove R2. total And thus the etching rate caused by plasma can be controlled.

[0068] In addition, Figure 3 The thickness T of the first groove R1 is shown in the figure. air1 With the thickness T of the second groove R2 air2 The essence is the same, but it is not limited to this. For example, the thickness T of the first groove R1 air1 The thickness T can be greater than that of the second groove R2. air2 .

[0069] Figure 4 This is a perspective view illustrating an insulating plate according to a second embodiment of the present invention. For ease of explanation, the main focus will be on the description and utilization of... Figure 2 and Figure 3 The characteristics described are different.

[0070] Reference Figure 4According to the second embodiment of the present invention, a through hole 251 is formed in the insulating plate 250-1 for transmitting high-frequency power to the support plate. Figure 1 The rod (rod) of 230) passes through the through hole 251.

[0071] A protective portion 252 is provided on the first surface UF of the insulating plate 250-1, surrounding a portion of the side surface of the rod. The upper surface of the protective portion 252 can protrude higher than the bottom surface of the first groove R1. That is, the upper surface of the protective portion 252 is closer to the support plate 230 than the bottom surface of the first groove R1. With this shape, the upper surface of the protective portion 252 contacts the support plate 230 and, together with the upper surface 256 of the first region bulk 2, stably supports the support plate 230.

[0072] Similarly, a protective portion 253 is also provided on the second surface DF of the insulating plate 250-1, surrounding a portion of the side surface of the aforementioned rod. The lower surface of the protective portion 253 can protrude downwards compared to the bottom surface of the second groove R2. That is, the lower surface of the protective portion 253 is closer to the lower cover 270 than the bottom surface of the second groove R2. This shape allows the bottom surface of the protective portion 253 to contact the lower cover 270.

[0073] Figure 5 This is a perspective view illustrating an insulating plate according to a third embodiment of the present invention. Figure 6 It is along Figure 5 A sectional view taken along line VI-VI. For ease of explanation, the main focus will be on the use of... Figures 2 to 4 The characteristics described are different.

[0074] Reference Figure 5 and Figure 6 According to the third embodiment, a plurality of first partial grooves R11, R12, R13, and R14, which are separated from each other, can be formed on the first surface UF of the insulating plate 250-2, and a plurality of second partial grooves R21, R22, R23, and R24, which are separated from each other, can be formed on the second surface DF of the insulating plate 250-2.

[0075] Furthermore, despite Figure 6 The diagram shows that partial grooves R11 to R14 and R21 to R24 are formed on both the first surface UF and the second surface DF, but it is not limited to this. That is, multiple first partial grooves R11, R12, R13, and R14 can be formed on the first surface UF, and the second surface DF may not have second partial grooves formed.

[0076] Furthermore, despite Figure 6The diagram shows that the number of first partial grooves R11, R12, R13, and R14 formed on the first surface UF is the same as the number of second partial grooves R21, R22, R23, and R24 formed on the second surface DF, but is not limited thereto. That is, the number of first partial grooves R11, R12, R13, and R14 formed on the first surface UF and the number of second partial grooves R21, R22, R23, and R24 formed on the second surface DF can be different from each other.

[0077] Figure 7 This is a perspective view illustrating an insulating plate according to a fourth embodiment of the present invention. For ease of explanation, the main focus will be on the description and utilization of... Figures 2 to 6 The characteristics described are different.

[0078] Reference Figure 7 Dielectric plate 220 is arranged on support plate (refer to) Figure 1 The upper part of (230). A heater for controlling the temperature of the substrate W (see reference). Figure 1 225) is located inside the dielectric plate 220.

[0079] Specifically, the dielectric plate 220 is divided into heating zones HZ1, HZ2, and HZ3, each capable of being controlled at a different temperature. That is, each of the multiple heating zones HZ1, HZ2, and HZ3 is provided with a corresponding heating unit. The temperature of each heating unit can be adjusted independently.

[0080] More specifically, the insulating plate 250-3 may be provided with a through hole 251 for transmitting high-frequency power to the rod of the support plate 230 through the through hole 251, and multiple partial grooves R15, R16, and R17 may be formed in a ring around the through hole 251. That is, partial groove R15 may be formed in a ring around the through hole 251, partial groove R16 may be formed in a ring around partial groove R15, and partial groove R17 may be formed in a ring around partial groove R16.

[0081] Furthermore, the protrusions 258 that distinguish between partial grooves R15 and R16 correspond to the boundary regions between the corresponding heating zones HZ1 and HZ2. The protrusions 259 that distinguish between partial grooves R16 and R17 correspond to the boundary regions between the corresponding heating zones HZ2 and HZ3.

[0082] Figure 8 This is a perspective view illustrating an insulating plate according to a fifth embodiment of the present invention. For ease of explanation, the main focus will be on the description and utilization of... Figures 2 to 7 The characteristics described are different.

[0083] Reference Figure 8According to the fifth embodiment of the present invention, a plurality of first partial grooves R11a, R12, R13a, and R14, which are separated from each other, can be formed on the first surface UF of the insulating plate 250-4, and a plurality of second partial grooves R21, R22a, R23, and R24a, which are separated from each other, can be formed on the second surface DF.

[0084] Specifically, the thickness of some of the first partial grooves R11a, R13a can be different from the thickness of the other first partial grooves R12, R14. That is, the thickness of the first partial grooves R11a, R13a is greater than the thickness of the first partial grooves R12, R14.

[0085] Furthermore, the thickness of some of the second-part grooves R22a, R24a may differ from the thickness of others of the second-part grooves R21, R23. That is, the thickness of the second-part grooves R22a, R24a is greater than the thickness of the second-part grooves R21, R23.

[0086] In order to reduce the total capacitance of the insulating plate 250-4 while stably supporting the support plate 230 (i.e., to increase the volume of the air gap), the thickness of some of the first part grooves R11a, R13a and some of the second part grooves R22a, R24a can be increased.

[0087] Figure 9 This is a cross-sectional view used to illustrate the insulating plate according to the sixth embodiment of the present invention. Figure 10 This is a cross-sectional view used to illustrate an insulating plate according to a seventh embodiment of the present invention. For ease of explanation, the description and utilization will be the main focus. Figures 2 to 8 The characteristics described are different.

[0088] Reference Figure 9 In the insulating plate 250-5 according to the sixth embodiment of the present invention, a first groove R1 is formed on the first surface UF, and a second groove R2 is not formed on the second surface DF. Conversely, referring to... Figure 10 In the insulating plate 250-6 according to the seventh embodiment of the present invention, the first groove R1 is not formed on the first surface UF, and the second groove R2 is formed on the second surface DF.

[0089] Figure 11 This is a diagram illustrating the effects of a substrate processing apparatus according to some embodiments of the present invention.

[0090] Reference Figure 11The x-axis represents reactance, the y-axis on the left represents the envelope voltage (Vrms), and the y-axis on the right represents the etching rate of the oxide film. ■ represents the envelope voltage (V), and ● represents the etching rate of the oxide film (%). It can be seen that when the reactance increases from 48.5Ω to 50Ω, the envelope voltage (V) increases, and the etching rate of the oxide film (%) also increases. This can be achieved by adjusting the... Figures 2 to 10 The amount of air gap is adjusted by the number / thickness of the grooves in the insulating plate 250-250-6. By adjusting the amount of air gap, the reactance can be adjusted, and the etching rate (%) of the oxide film can also be adjusted.

[0091] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, those skilled in the art should understand that the present invention can be implemented in other specific forms without changing its technical concept or essential features. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims

1. A substrate processing apparatus, comprising: A chamber, including a processing space for using plasma to process a substrate; as well as A support module, located within the processing space, is used to support the substrate. The support module includes: Support plate, used to receive high-frequency power; and An insulating plate is disposed below the support plate and includes a first surface facing the support plate, wherein at least one first groove is formed on the first surface. The insulating plate also includes a through hole through which a rod for transmitting the high-frequency power to the support plate passes; The insulating plate includes a first region, a second region located inside the first region, and a protective portion disposed on the first surface and surrounding a portion of the side surface of the rod. The at least one first groove is formed in the second region, and The upper surface of the first region and the upper surface of the protective part are closer to the support plate than the bottom surface of the first groove, and contact the support plate to support it. The first groove includes a plurality of first partial grooves separated from each other, some of which have a different thickness than others.

2. The substrate processing apparatus according to claim 1, further comprising a lower cover disposed at the lower part of the insulating plate, wherein, The insulating plate includes a second surface facing the lower cover, and at least one second groove is formed on the second surface.

3. The substrate processing apparatus according to claim 1, wherein, A dielectric plate is also provided on the upper part of the support plate, and a heater for controlling the temperature of the substrate is provided inside the dielectric plate. The heater includes multiple heating units that can be controlled at different temperatures. The dielectric plate is divided into multiple heating zones, and each of the multiple heating zones corresponds to a multiple heating unit.

4. The substrate processing apparatus according to claim 3, wherein, The plurality of first-part grooves correspond to the plurality of heating zones, respectively.

5. The substrate processing apparatus according to claim 3, wherein, The plurality of first-part grooves are formed in a ring around the through hole.

6. A substrate processing apparatus, comprising: A housing, the upper surface of which is open and includes a processing space; A sealing cap covers the upper surface of the housing and includes a gas supply port for supplying process gas into the processing space; An antenna, arranged on the sealed cover, is in the form of a coil and is used to receive first high-frequency power to excite the process gas into plasma; as well as A support module, located within the processing space, is used to support the substrate. The support module includes: A support plate is used to receive a second high-frequency power to guide the plasma supply in the direction of the substrate; An insulating plate is arranged at the lower part of the support plate; and The lower cover is located at the bottom of the insulating plate. The insulating plate includes a first surface facing the support plate and a second surface facing the lower cover, and at least one first groove is formed on the first surface. The insulating plate further includes a through hole through which a rod for transmitting the high-frequency power to the support plate passes. The insulating plate includes a first region, a second region located inside the first region, and a protective portion disposed on the first surface and surrounding a portion of the side surface of the rod. The at least one first groove is formed in the second region. The upper surface of the first region and the upper surface of the protective part are closer to the support plate than the bottom surface of the first groove, and contact the support plate to support it. The first groove includes a plurality of first partial grooves separated from each other, some of which have a different thickness than others.

7. The substrate processing apparatus according to claim 6, wherein, A dielectric plate is also provided on the upper part of the support plate, and a heater for controlling the temperature of the substrate is provided inside the dielectric plate. The heater includes multiple heating units that can be controlled at different temperatures. The dielectric plate is divided into multiple heating zones, and each of the multiple heating zones corresponds to a multiple heating unit.

8. The substrate processing apparatus according to claim 6, wherein, The plurality of first-part grooves are formed in a ring around the through hole.

9. The substrate processing apparatus according to claim 6, wherein, At least one second groove is formed on the second surface.

10. The substrate processing apparatus according to claim 9, wherein, The second groove includes a plurality of second partial grooves, which are formed in a ring around the through hole.

11. An insulating plate for use in a substrate processing apparatus that utilizes plasma to process a substrate, the substrate processing apparatus including a support plate for receiving high-frequency power, the insulating plate being disposed below the support plate and comprising: The main body is made of ceramic material and is cylindrical in shape, including an upper surface and a lower surface; A through hole extends through the center of the main body, and a rod for transmitting the high-frequency power to the support plate extends through the through hole; At least one first groove is formed on the upper surface to form an air gap; the insulating plate includes a first region, a second region located inside the first region, and a protective portion disposed on the upper surface and surrounding a portion of the side surface of the rod. The at least one first groove is formed in the second region, and The upper surface of the first region and the upper surface of the protective part are closer to the support plate than the bottom surface of the first groove, and contact the support plate to support it. The first groove includes a plurality of first partial grooves separated from each other, some of which have a different thickness than others.

12. The insulating board according to claim 11, wherein, At least one second groove and a protective portion are also formed on the lower surface, the protective portion protruding from the bottom surface of the second groove and defining the through hole.

13. The insulating board according to claim 11, wherein, The plurality of first-part grooves are formed in a ring around the through hole.

14. The insulating board according to claim 11, wherein, At least one second groove is formed on the lower surface, thereby forming an air gap.

15. The insulating board according to claim 14, wherein, The at least one second groove includes a plurality of second partial grooves, which are formed in a ring shape with the through hole as the center.

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