A GaAs-based laser epitaxial wafer with a GaN current channel and a method for preparing the same

Abstract

The present invention discloses a GaAs-based laser epitaxial wafer with a GaN current channel and a preparation method thereof. The GaN current channel is embedded in the Alx3Ga1‑x3As upper waveguide layer in the epitaxial wafer. By embedding the GaN current channel in the upper waveguide layer, the current is confined to the GaN current channel to achieve current confinement. Since the GaN material has a large bandgap and has very low absorption of long-wavelength light, it will not affect the lasing of the long-wavelength laser, effectively overcoming the problem that the GaN laser has a serious power attenuation caused by long-term operation. In addition, since the polarization coefficient of the GaN material is different from that of the AlGaAs material, after the GaN current channel is embedded in the upper waveguide layer, a layer of positive polarization charge can be formed at the GaN / AlGaAs interface to attract free electrons to form compensation, which is offset by the built-in electric field of the laser, which is conducive to the recombination of holes and electrons in the quantum well and improves the laser efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor lasers, and in particular to a GaAs-based laser epitaxial wafer with a GaN current channel and a preparation method thereof. Background Art

[0002] The information disclosed in the background of the invention is only intended to enhance understanding of the overall background of the invention and should not necessarily be regarded as an admission or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art.

[0003] In recent years, GaAs-based semiconductor lasers have been increasingly used in daily life, and enthusiasm for their development as a representative of the second-generation semiconductor materials has gradually declined. With the advancement of science and technology, people's demand for high-power, high-frequency, and high-energy-density materials has become increasingly urgent, and GaN, as a third-generation semiconductor, has also begun to gradually enter people's daily lives. GaN materials have a large bandgap and a high breakdown voltage, making them suitable for high-voltage and high-power devices. In addition, their heat dissipation performance is better than that of GaAs materials, making them more suitable for operation at high temperatures. In addition, the electron mobility of GaN is also greater than that of GaAs, so GaN is a more ideal semiconductor laser material than GaAs. However, GaN lasers have the problems of high substrate material cost and poor growth quality. More importantly, GaN lasers have the problem of severe power attenuation after long-term operation, which greatly limits the application of GaN lasers. Summary of the Invention

[0004] To address the aforementioned issues, the present invention provides a GaAs-based laser epitaxial wafer with a GaN current channel and a method for fabricating the same. This approach achieves current confinement by confining the current within the GaN current channel, effectively overcoming the severe power degradation that can occur with GaN lasers over extended periods of operation. To achieve these objectives, the present invention discloses the following technical solutions.

[0005] In a first aspect of the present invention, a GaAs-based laser epitaxial wafer having a GaN current channel is disclosed. The GaN current channel is embedded in an upper waveguide layer in the epitaxial wafer.

[0006] Furthermore, a plurality of the GaN current channels are distributed in the upper waveguide layer at intervals and in parallel with each other.

[0007] Furthermore, the GaN layer is doped with carbon atoms. Preferably, the carbon atom doping concentration is 1E17 to 5E17 atoms / cm 3 In the present invention, the main purpose of the doping is to provide a large number of holes and realize a potential difference by changing the doping gradient, which is conducive to the migration of holes to the quantum well and ultimately realizes the recombination of holes and electrons in the quantum well.

[0008] Furthermore, the material of the upper waveguide layer includes Alx3Ga1-x3As, 0.1≤x3≤0.3. Preferably, the upper waveguide layer is doped with carbon atoms, and the doping concentration is preferably 1E17 to 5E17 atoms / cm 3 In the present invention, the main purpose of the doping is to provide electrons, and the potential difference achieved by the change of the doping gradient is conducive to the migration of electrons to the quantum well.

[0009] Furthermore, the upper waveguide layer is disposed on a substrate layer. Preferably, the substrate layer comprises, from bottom to top, a GaAs substrate, a GaAs buffer layer, an Alx1Ga1-x1As N confinement layer, an Alx2Ga1-x2As lower waveguide layer, and an Iny1Ga1-y1As quantum well layer. The upper waveguide layer overlies the Iny1Ga1-y1As quantum well layer, which is in turn overlaid with an Alx4Ga1-x4As P confinement layer. The following conditions apply: 0.3 ≤ x1 ≤ 0.5, 0.1 ≤ x2 ≤ 0.3, 0.1 ≤ y1 ≤ 0.3, and 0.7 ≤ x4 ≤ 0.9.

[0010] Furthermore, the GaAs buffer layer is doped with silicon atoms. Preferably, the doping concentration of the silicon atoms is 1E18 to 3E18 atoms / cm 3 In the present invention, the main purpose of the doping is to provide a large number of electrons, and to achieve a potential difference through the change of the doping gradient, which is conducive to the migration of holes to the quantum well, and ultimately to achieve the recombination of holes and electrons in the quantum well.

[0011] Furthermore, the Alx1Ga1-x1AsN confinement layer is doped with silicon atoms. Preferably, the doping concentration of the silicon atoms is 8E17 to 2E18 atoms / cm 3 In the present invention, the main purpose of the doping is to provide a large number of electrons, and to achieve a potential difference through the change of the doping gradient, which is conducive to the migration of holes to the quantum well, and ultimately to achieve the recombination of holes and electrons in the quantum well.

[0012] Furthermore, the Alx2Ga1-x2As lower waveguide layer is doped with silicon atoms. Preferably, the doping concentration of the silicon atoms is 5E17 to 2E18 atoms / cm 3 In the present invention, the main purpose of the doping is to provide a large number of electrons, and to achieve a potential difference through the change of the doping gradient, which is conducive to the migration of holes to the quantum well, and ultimately to achieve the recombination of holes and electrons in the quantum well.

[0013] Furthermore, the Alx4Ga1-x4AsP confinement layer is doped with carbon atoms. Preferably, the doping concentration of the carbon atoms is 1E18 to 3E18 atoms / cm 3In the present invention, the main purpose of the doping is to provide holes and realize the potential difference by changing the doping gradient, which is conducive to the migration of holes to the quantum well and ultimately realizes the recombination of the holes and the above-mentioned electrons in the quantum well, which helps to further improve the efficiency of the laser.

[0014] Furthermore, the GaAs ohmic contact layer is doped with carbon atoms. Preferably, the doping concentration of the carbon atoms is 9E18 to 5E19 atoms / cm 3 In the present invention, the main purpose of the doping is to provide a large number of holes, and to achieve a potential difference through the change of the doping gradient to facilitate the migration of holes to the quantum well, and ultimately achieve the recombination of holes and electrons in the quantum well.

[0015] Furthermore, the thickness of the GaAs buffer layer is controlled to be between 100 nm and 300 nm. In the present invention, the GaAs buffer layer has the function of forming a fresh growth interface, covering defects on the substrate surface, and eliminating the influence of substrate defects on epitaxial layer growth.

[0016] Furthermore, the thickness of the Alx1Ga1-x1As N confinement layer is controlled to be between 2 and 3 μm. In the present invention, the functions of the N confinement layer include: (1) providing sufficient electrons; and (2) limiting the range of electron and hole movement, confining electrons and holes to move between the N confinement layer and the P confinement layer, thereby increasing the recombination probability of electrons and holes and reducing the probability of electron leakage.

[0017] Furthermore, the thickness of the Alx2Ga1-x2As lower waveguide layer is controlled to be between 500 and 800 nm. In the present invention, the functions of the lower waveguide layer include: (1) providing a resonant cavity for the laser, allowing photons to form oscillations, achieve population inversion, and thus generate laser light; and (2) limiting the laser light field and improving the beam quality.

[0018] Furthermore, the thickness of the Iny1Ga1-y1As quantum well layer is controlled to be between 5 and 10 nm. In the present invention, the function of the quantum well layer is to allow holes and electrons to recombine to generate photons.

[0019] Furthermore, the thickness of the Alx3Ga1-x3As upper waveguide layer is controlled to be between 90 and 250 nm. In the present invention, the functions of the upper waveguide layer include: (1) providing a resonant cavity for the laser, allowing photons to form oscillations to achieve population inversion and thus generate laser light; and (2) limiting the laser light field to improve the beam quality.

[0020] Furthermore, the thickness of the GaN layer is controlled between 10-100 nm.

[0021] Furthermore, the thickness of the Alx4Ga1-x4As P confinement layer is controlled to be between 1 and 3 μm. In the present invention, the P confinement layer has the following functions: (1) providing sufficient holes; and (2) limiting the range of electron and hole movement, confining electrons and holes to move between the N confinement layer and the P confinement layer, thereby increasing the recombination probability of electrons and holes and reducing the probability of electron leakage.

[0022] Furthermore, the thickness of the GaAs ohmic contact layer is controlled to be between 100 and 300 nm. In the present invention, the functions of the GaAs ohmic contact layer include: (1) covering the surface to protect the P confinement layer from oxidation; and (2) contacting the metal layer to reduce resistance when manufacturing the die.

[0023] In a second aspect of the present invention, a method for preparing the GaAs-based laser epitaxial wafer having a GaN current channel is disclosed, comprising the following steps:

[0024] (1) Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 760-780℃ and bake it, then introduce AsH3 to perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen on the substrate surface.

[0025] (2) When the reaction temperature drops to 720-750°C, a GaAs buffer layer is grown on a GaAs substrate under the conditions of TMGa and AsH3.

[0026] (3) When the reaction temperature drops to 640-680° C., an Alx1Ga1-x1AsN confinement layer is grown on the GaAs buffer layer under the conditions of TMAl, TMGa and AsH3.

[0027] (4) Continuing to maintain the temperature at 640-680°C, under the conditions of TMAl, TMGa and AsH3, an Alx2Ga1-x2As lower waveguide layer is grown on the Alx1Ga1-x1AsN confinement layer.

[0028] (5) Continuously maintaining the temperature at 640-680° C., in the presence of TMIn, TMGa and AsH 3 , growing an Iny 1 Ga 1-y 1 As quantum well layer on the Al x 2 Ga 1-x 2 As lower waveguide layer.

[0029] (6) Continuously maintaining the temperature at 640-680° C., under the conditions of TMAl, TMGa and AsH 3 , an Al x 3 Ga 1-x 3 As upper waveguide layer is grown on the In y 1 Ga 1-y 1 As quantum well layer.

[0030] (7) Continue to maintain the temperature at 640-680° C. and grow a GaN layer on the Alx3Ga1-x3As upper waveguide layer under the conditions of TMGa and NH3.

[0031] (8) Etching the GaN layer to form strip-shaped GaN current channels that are spaced apart.

[0032] (9) Maintaining the temperature at 640-680° C., under the conditions of TMAl, TMGa and AsH 3 , continue to grow the Al x 3 Ga 1-x 3 As upper waveguide layer to bury the GaN current channel therein.

[0033] (10) Continuing to maintain the temperature at 640-680°C, under the conditions of TMAl, TMGa and AsH3, an Alx4Ga1-x4As P confinement layer is grown on the Alx3Ga1-x3As upper waveguide layer of step (9).

[0034] (11) When the reaction temperature drops to 540-560° C., a GaAs ohmic contact layer is grown on the Alx4Ga1-x4AsP confinement layer under the conditions of TMGa and AsH3 to obtain the epitaxial wafer.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] First, the present invention embeds a GaN current channel in the Alx4Ga1-x4As P confinement layer and the Alx3Ga1-x3As upper waveguide layer, thereby confining the current to the GaN current channel to achieve current confinement. Because the GaN material has a large bandgap and very low absorption of long-wavelength light, it will not affect the lasing of the long-wavelength laser, effectively overcoming the problem of severe power attenuation caused by long-term operation of GaN lasers. At the same time, the GaAs-based laser epitaxial wafer with the GaN current channel of the present invention is based on GaAs semiconductor material, which is lower in cost than lasers made of GaN semiconductor material, and the growth quality of GaAs on the substrate is good. In addition, the present invention uses the above-mentioned special technical means to effectively solve the problem of severe power attenuation of GaN lasers, so that the GaAs-based laser epitaxial wafer with the GaN current channel of the present invention has the technical advantages of both low cost and high power. Experiments have shown that the laser using the GaAs-based laser epitaxial wafer with the GaN current channel proposed by the present invention can still maintain high power under long-term continuous operation.

[0037] Secondly, since the polarization coefficient of GaN material is different from that of AlGaAs material, after the GaN current channel is buried in the waveguide layer on Alx3Ga1-x3As, a layer of positive polarization charge can be formed at the GaN / AlGaAs interface, which in turn attracts free electrons to form compensation and offset the built-in electric field of the laser. This is very beneficial to the recombination of holes and electrons in the quantum well, thereby improving the efficiency of the laser.

[0038] Thirdly, due to the difference in refractive index between GaN material and AlGaAs material, total reflection occurs when light propagates laterally, resulting in a large amount of light being restricted and unable to propagate out, forming light limitation and ensuring the generation of high beam quality of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The accompanying drawings, which constitute a part of the present invention, are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute improper limitations on the present invention.

[0040] Figure 1 4 is a front view of a GaAs-based laser epitaxial wafer with a GaN current channel in an embodiment.

[0041] Figure 2 For the above Figure 1 Side view of the middle and upper waveguide layers and GaN current channel.

[0042] The numbers in the figure represent: 1. GaAs substrate, 2. GaAs buffer layer, 3. Alx1Ga1-x1AsN confinement layer, 4. Alx2Ga1-x2As lower waveguide layer, 5. Iny1Ga1-y1As quantum well layer, 6. Alx3Ga1-x3As upper waveguide layer, 7. GaN current channel, 8. Alx4Ga1-x4AsP confinement layer, 9. GaAs ohmic contact layer. DETAILED DESCRIPTION

[0043] It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the present invention. Unless otherwise specified, all technical and scientific terms used in the present invention have the same meaning as commonly understood by those skilled in the art to which the present invention belongs.

[0044] For the convenience of description, if the words "up", "down", "left" and "right" appear in the present invention, they only indicate that they are consistent with the up, down, left and right directions of the drawings themselves, and do not limit the structure. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or component referred to needs to have a specific orientation, be constructed and operate in a specific orientation. Therefore, they cannot be understood as limiting the present invention.

[0045] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. The reagents or raw materials used in the present invention can be purchased through conventional channels. Unless otherwise specified, the reagents or raw materials used in the present invention are used in a conventional manner in the art or in accordance with the product instructions. In addition, any methods and materials similar to or equivalent to those described herein can be applied to the method of the present invention. The preferred embodiments and materials described in the present invention are for demonstration purposes only. The present invention will now be further described with reference to the accompanying drawings and specific embodiments.

[0046] Example 1

[0047] A method for preparing a GaAs-based laser epitaxial wafer having a GaN current channel, comprising:

[0048] (1) Place a GaAs substrate 1 in a growth chamber of an MOCVD device with a H2 atmosphere, heat the growth chamber to 770°C and bake for 40 minutes, then introduce AsH3 gas to perform high-temperature heat treatment on the GaAs substrate 1 to remove water and oxygen on the substrate surface and prepare for step (2).

[0049] (2) The temperature of the growth chamber was lowered to 730°C, and then TMGa and AsH3 were introduced, with a molar ratio of TMGa to AsH3 of 1:120, and a growth rate of A GaAs buffer layer 2 with a thickness of 250 nm is grown on the GaAs substrate 1 .

[0050] (3) When the growth chamber temperature drops to 650℃, TMAl, TMGa and AsH3 are introduced, the molar ratio of TMAl to TMGa is 9:11, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al2O3 with a thickness of 2.5 μm is grown on the GaAs buffer layer 2 in step (2). 0.45 Ga 0.55 As N confinement layer 3.

[0051] (4) Raise the growth room temperature to 680℃, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl and TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (3) Al 0.45 Ga 0.55 Al with a thickness of 700 nm is grown on the AsN confinement layer 3. 0.2 Ga 0.8 As lower waveguide layer 4.

[0052] (5) When the growth chamber temperature drops to 660℃, TMIn, TMGa and AsH3 are continuously introduced. The molar ratio of TMIn to TMGa is 3:17, and the ratio of the sum of the molar amounts of TMIn and TMGa to the molar amount of AsH3 is 1:90. The growth rate is In step (4) Al 0.2 Ga 0.8 On the As lower waveguide layer 4 grows an In 0.15 Ga 0.85 As quantum well layer 5.

[0053] (6) Raise the growth room temperature to 680℃, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl and TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (5) 0.15 Ga 0.85 Al with a thickness of 20 nm is grown on the As quantum well layer 5. 0.2 Ga 0.8 As upper waveguide layer 6.

[0054] (7) Maintaining the growth room temperature at 680°C, introducing TMGa and NH3, the molar ratio of TMGa to NH3 is 1:1100, and the growth rate is In step (6) Al 0.2 Ga 0.8 A GaN layer with a thickness of 80 nm is grown on the As upper waveguide layer 6 .

[0055] (8) The GaN layer of step (7) is etched by coating the surface of the epitaxial wafer with positive photoresist, then exposing and developing the surface, and directionally etching for 60 seconds using an etching solution of sulfuric acid: hydrogen peroxide: deionized water in a ratio of 1:3:5 to form a strip-shaped GaN current channel 7 with a width of 140 μm, a spacing between adjacent GaN current channels 7 of 20 μm, and a spacing (groove) depth of 80 nm between adjacent GaN current channels 7.

[0056] (9) Maintaining the growth room temperature at 680°C, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl to TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al with a thickness of 150 nm is grown on the GaN current channel 7 in step (8). 0.2 Ga 0.8 As waveguide layer 6, so that the GaN current channel 7 is covered on the Al 0.2 Ga 0.8As in the upper waveguide layer 6.

[0057] (10) Maintaining the growth room temperature at 680°C, TMAl, TMGa and AsH3 were introduced, the molar ratio of TMAl to TMGa was 4:1, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 was 1:120, and the growth rate was In step (9) Al 0.2 Ga 0.8 A 1.5 μm thick Al layer is grown on the As upper waveguide layer 6. 0.8 Ga 0.2 As P confinement layer 8.

[0058] (11) When the growth chamber temperature drops to 550℃, the molar ratio of TMGa and AsH3, TMGa and AsH3 is 1:120, and the growth rate is In step (10) 0.8 Ga 0.2 A GaAs ohmic contact layer 9 with a thickness of 300 nm is grown on the AsP confinement layer 8 to obtain the GaAs-based laser epitaxial wafer with a GaN current channel. The schematic diagram of the structure is shown in FIG. Figure 1 and Figure 2 .

[0059] Example 2

[0060] A method for preparing a GaAs-based laser epitaxial wafer having a GaN current channel, comprising:

[0061] (1) Place a GaAs substrate 1 in a growth chamber of an MOCVD device with a H2 atmosphere, heat the growth chamber to 780°C and bake for 20 minutes, then introduce AsH3 gas to perform high-temperature heat treatment on the GaAs substrate 1 to remove water and oxygen on the substrate surface and prepare for step (2).

[0062] (2) The temperature of the growth chamber was lowered to 750°C, and then TMGa and AsH3 were introduced, with a molar ratio of TMGa to AsH3 of 1:120, and a growth rate of A GaAs buffer layer 2 with a thickness of 300 nm is grown on the GaAs substrate 1 .

[0063] (3) When the growth chamber temperature drops to 680℃, TMAl, TMGa and AsH3 are introduced, the molar ratio of TMAl and TMGa is 1:1, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al2O3 with a thickness of 2 μm is grown on the GaAs buffer layer 2 in step (2). 0.5 Ga 0.5As N confinement layer 3.

[0064] (4) When the growth room temperature drops to 660℃, TMAl, TMGa and AsH3 are continuously introduced. The molar ratio of TMAl to TMGa is 3:7, and the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120. The growth rate is In step (3) Al 0.5 Ga 0.5 Al with a thickness of 800 nm is grown on the AsN confinement layer 3. 0.3 Ga 0.7 As lower waveguide layer 4.

[0065] (5) When the growth chamber temperature drops to 640℃, TMIn, TMGa and AsH3 are continuously introduced. The molar ratio of TMIn to TMGa is 1:4, and the ratio of the sum of the molar amounts of TMIn and TMGa to the molar amount of AsH3 is 1:90. The growth rate is In step (4) Al 0.3 Ga 0.7 On the As lower waveguide layer 4 grows an In 0.2 Ga 0.8 As quantum well layer 5.

[0066] (6) Raise the growth room temperature to 660℃, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl and TMGa is 1:9, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (5) 0.2 Ga 0.8 Al with a thickness of 50 nm is grown on the As quantum well layer 5. 0.1 Ga 0.9 As upper waveguide layer 6.

[0067] (7) Maintaining the growth room temperature at 660°C, introducing TMGa and NH3, the molar ratio of TMGa to NH3 is 1:1100, and the growth rate is In step (6) Al 0.1 Ga 0.9 A GaN layer with a thickness of 100 nm is grown on the As upper waveguide layer 6 .

[0068] (8) The surface of the epitaxial wafer is patterned with positive photoresist, and then exposed and developed. The GaN layer of step (7) is etched for 75 seconds using an etching solution of sulfuric acid: hydrogen peroxide: deionized water in a ratio of 1:3:5 to form a strip-shaped GaN current channel 7 with a width of 140 μm. The spacing between adjacent GaN current channels 7 is 20 μm, and the spacing (groove) depth between adjacent GaN current channels 7 is 100 nm.

[0069] (9) Maintaining the growth room temperature at 660°C, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl to TMGa is 1:9, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al with a thickness of 200 nm is grown on the GaN current channel 7 in step (8). 0.1 Ga 0.9 As waveguide layer 6, so that the GaN current channel 7 is covered on the Al 0.1 Ga 0.9 As in the upper waveguide layer 6.

[0070] (10) Maintaining the growth room temperature at 660°C, TMAl, TMGa and AsH3 were introduced, the molar ratio of TMAl to TMGa was 9:1, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 was 1:120, and the growth rate was In step (9) Al 0.1 Ga 0.9 A 3 μm thick Al layer is grown on the As upper waveguide layer 6. 0.9 Ga 0.1 As P confinement layer 8.

[0071] (11) When the growth chamber temperature drops to 560℃, the molar ratio of TMGa and AsH3, TMGa and AsH3 is 1:120, and the growth rate is In step (10) 0.9 Ga 0.1 A GaAs ohmic contact layer 9 with a thickness of 300 nm is grown on the AsP confinement layer 8 to obtain the GaAs-based laser epitaxial wafer with a GaN current channel. The schematic diagram of the structure is shown in FIG. Figure 1 and Figure 2 .

[0072] Example 3

[0073] A method for preparing a GaAs-based laser epitaxial wafer having a GaN current channel, comprising:

[0074] (1) Place a GaAs substrate 1 in a growth chamber of an MOCVD device with a H2 atmosphere, heat the growth chamber to 760°C and bake for 30 minutes, then introduce AsH3 gas to perform high-temperature heat treatment on the GaAs substrate 1 to remove water and oxygen on the substrate surface and prepare for step (2).

[0075] (2) The temperature of the growth chamber was lowered to 720°C, and then TMGa and AsH3 were introduced, with the molar ratio of TMGa to AsH3 being 1:120, and the growth rate being A GaAs buffer layer 2 with a thickness of 100 nm is grown on the GaAs substrate 1 .

[0076] (3) When the growth chamber temperature dropped to 640℃, TMAl, TMGa and AsH3 were introduced, the molar ratio of TMAl to TMGa was 3:7, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 was 1:120, and the growth rate was Al with a thickness of 3 μm is grown on the GaAs buffer layer 2 in step (2). 0.3 Ga 0.7 As N confinement layer 3.

[0077] (4) Maintaining the growth room temperature at 640°C, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl to TMGa is 1:9, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (3) Al 0.3 Ga 0.7 Al with a thickness of 500 nm is grown on the AsN confinement layer 3. 0.1 Ga 0.9 As lower waveguide layer 4.

[0078] (5) Raise the growth chamber temperature to 680℃, continue to introduce TMIn, TMGa and AsH3, the molar ratio of TMIn and TMGa is 1:9, the ratio of the sum of the molar amounts of TMIn and TMGa to the molar amount of AsH3 is 1:90, and the growth rate is In step (4) Al 0.1 Ga 0.9 On the As lower waveguide layer 4 grows an In 0.1 Ga 0.9 As quantum well layer 5.

[0079] (6) When the growth temperature drops to 640℃, TMAl, TMGa and AsH3 are continuously introduced. The molar ratio of TMAl to TMGa is 3:7, and the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120. The growth rate is In step (5) 0.1 Ga 0.9 Al with a thickness of 10 nm is grown on the As quantum well layer 5. 0.3 Ga 0.7 As upper waveguide layer 6.

[0080] (7) Maintaining the growth room temperature at 640°C, introducing TMGa and NH3, the molar ratio of TMGa to NH3 is 1:1100, and the growth rate is In step (6) Al 0.3 Ga 0.7 A GaN layer with a thickness of 10 nm is grown on the As upper waveguide layer 6 .

[0081] (8) The surface of the epitaxial wafer is patterned with positive photoresist, and then exposed and developed. The GaN layer of step (7) is etched for 8 seconds using an etching solution of sulfuric acid: hydrogen peroxide: deionized water in a ratio of 1:3:5 to form a strip-shaped GaN current channel 7 with a width of 140 μm. The spacing between adjacent GaN current channels 7 is 20 μm, and the spacing (groove) between adjacent GaN current channels 7 has a depth of 10 nm.

[0082] (9) Maintaining the growth room temperature at 640°C, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl to TMGa is 3:7, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al with a thickness of 10 nm is grown on the GaN current channel 7 in step (8). 0.3 Ga 0.7 As waveguide layer 6, so that the GaN current channel 7 is covered on the Al 0.3 Ga 0.7 As in the upper waveguide layer 6.

[0083] (10) Maintaining the growth room temperature at 640°C, TMAl, TMGa and AsH3 were introduced, the molar ratio of TMAl to TMGa was 7:3, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 was 1:120, and the growth rate was In step (9) Al 0.3 Ga 0.7 A 1 μm thick Al layer is grown on the As upper waveguide layer 6. 0.7 Ga 0.3 As P confinement layer 8.

[0084] (11) When the growth chamber temperature drops to 540℃, the molar ratio of TMGa and AsH3, TMGa and AsH3 is 1:120, and the growth rate is In step (10)0.7 Ga 0.3 A GaAs ohmic contact layer 9 with a thickness of 200 nm is grown on the AsP confinement layer 8 to obtain the GaAs-based laser epitaxial wafer with a GaN current channel. The schematic diagram of the structure is shown in FIG. Figure 1 and Figure 2 .

[0085] Example 4

[0086] A method for preparing a GaAs-based laser epitaxial wafer having a GaN current channel, comprising:

[0087] (1) Place a GaAs substrate 1 in a growth chamber of an MOCVD device with a H2 atmosphere, heat the growth chamber to 770°C and bake for 40 minutes, then introduce AsH3 gas to perform high-temperature heat treatment on the GaAs substrate 1 to remove water and oxygen on the substrate surface and prepare for step (2).

[0088] (2) The temperature of the growth chamber was lowered to 730°C, and then TMGa and AsH3 were introduced, with a molar ratio of TMGa to AsH3 of 1:120, and a growth rate of A GaAs buffer layer 2 with a thickness of 250 nm is grown on the GaAs substrate 1, and the doping concentration in the GaAs buffer layer 2 is 1.5E18 atoms / cm 3 The silicon atoms are doped with Si2H6 as the silicon doping source, and are introduced into the growth chamber together with the TMGa and AsH3.

[0089] (3) When the growth chamber temperature drops to 650℃, TMAl, TMGa and AsH3 are introduced, the molar ratio of TMAl to TMGa is 9:11, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al2O3 with a thickness of 2.5 μm is grown on the GaAs buffer layer 2 in step (2). 0.45 Ga 0.55 AsN confinement layer 3, and the Al 0.45 Ga 0.55 The doping concentration in the AsN confinement layer 3 is 1E18 atoms / cm 3 The silicon atoms are doped with Si2H6 as the silicon doping source, and are introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0090] (4) Raise the growth room temperature to 680℃, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl and TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (3) Al 0.45 Ga 0.55 Al with a thickness of 700 nm is grown on the AsN confinement layer 3. 0.2 Ga 0.8 As lower waveguide layer 4, and the Al 0.2 Ga 0.8 The doping concentration of As in the lower waveguide layer 4 is 7E17 atoms / cm 3 The silicon atoms are doped with Si2H6 as the silicon doping source, and are introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0091] (5) When the growth chamber temperature drops to 660℃, TMIn, TMGa and AsH3 are continuously introduced. The molar ratio of TMIn to TMGa is 3:17, and the ratio of the sum of the molar amounts of TMIn and TMGa to the molar amount of AsH3 is 1:90. The growth rate is In step (4) Al 0.2 Ga 0.8 On the As lower waveguide layer 4 grows an In 0.15 Ga 0.85 As quantum well layer 5.

[0092] (6) Raise the growth room temperature to 680℃, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl and TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (5) 0.15 Ga 0.85 Al with a thickness of 20 nm is grown on the As quantum well layer 5. 0.2 Ga 0.8 As waveguide layer 6, and the Al 0.2 Ga 0.8 The doping concentration in the As upper waveguide layer 6 is 3E17 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0093] (7) Maintaining the growth room temperature at 680°C, introducing TMGa and NH3, the molar ratio of TMGa to NH3 is 1:1100, and the growth rate is In step (6) Al 0.2 Ga 0.8 A GaN layer with a thickness of 80 nm is grown on the As upper waveguide layer 6, and the doping concentration in the GaN layer is 3E17 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMGa and NH3.

[0094] (8) The surface of the epitaxial wafer is patterned with positive photoresist, and then exposed and developed. The GaN layer of step (7) is etched for 60 seconds using an etching solution of sulfuric acid: hydrogen peroxide: deionized water in a ratio of 1:3:5 to form a strip-shaped GaN current channel 7 with a width of 140 μm. The spacing between adjacent GaN current channels 7 is 20 μm, and the spacing (groove) between adjacent GaN current channels 7 has a depth of 80 nm.

[0095] (9) Maintaining the growth room temperature at 680°C, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl to TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al with a thickness of 150 nm is grown on the GaN current channel 7 in step (8). 0.2 Ga 0.8 As waveguide layer 6, so that the GaN current channel 7 is covered on the Al 0.2 Ga 0.8 As in the upper waveguide layer 6, and the Al 0.2 Ga 0.8 The doping concentration in the As upper waveguide layer 6 is 3E17 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0096] (10) Maintaining the growth room temperature at 680°C, TMAl, TMGa and AsH3 were introduced, the molar ratio of TMAl to TMGa was 4:1, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 was 1:120, and the growth rate was In step (9) 0.2 Ga 0.8 A 1.5 μm thick Al layer is grown on the As upper waveguide layer 6. 0.8 Ga 0.2 AsP confinement layer 8, and the Al 0.8 Ga 0.2 The AsP confinement layer 8 is doped with a concentration of 2.5E18 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0097] (11) When the growth chamber temperature drops to 550℃, the molar ratio of TMGa and AsH3, TMGa and AsH3 is 1:120, and the growth rate is In step (10) Al 0.8 Ga0.2 A GaAs ohmic contact layer 9 with a thickness of 300 nm is grown on the AsP confinement layer 8, and the doping concentration in the GaAs ohmic contact layer 9 is 5E19 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa, and AsH3. The GaAs-based laser epitaxial wafer with GaN current channel is obtained. The structural diagram thereof is shown in FIG. Figure 1 and Figure 2 .

[0098] Example 5

[0099] A method for preparing a GaAs-based laser epitaxial wafer having a GaN current channel, comprising:

[0100] (1) Place a GaAs substrate 1 in a growth chamber of an MOCVD device with a H2 atmosphere, heat the growth chamber to 770°C and bake for 40 minutes, then introduce AsH3 gas to perform high-temperature heat treatment on the GaAs substrate 1 to remove water and oxygen on the substrate surface and prepare for step (2).

[0101] (2) The temperature of the growth chamber was lowered to 730°C, and then TMGa and AsH3 were introduced, with a molar ratio of TMGa to AsH3 of 1:120, and a growth rate of A GaAs buffer layer 2 with a thickness of 250 nm is grown on the GaAs substrate 1, and the doping concentration in the GaAs buffer layer 2 is 3E18 atoms / cm 3 The silicon atoms are doped with Si2H6 as the silicon doping source, and are introduced into the growth chamber together with the TMGa and AsH3.

[0102] (3) When the growth chamber temperature drops to 650℃, TMAl, TMGa and AsH3 are introduced. The molar ratio of TMAl to TMGa is 9:11, and the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120. The growth rate is Al2O3 with a thickness of 2.5 μm is grown on the GaAs buffer layer 2 in step (2). 0.45 Ga 0.55 AsN confinement layer 3, and the Al 0.45 Ga 0.55 The doping concentration in the AsN confinement layer 3 is 2E18 atoms / cm 3 The silicon atoms are doped with Si2H6 as the silicon doping source, and are introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0103] (4) Raise the growth room temperature to 680℃, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl and TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (3) Al 0.45 Ga 0.55 Al with a thickness of 700 nm is grown on the AsN confinement layer 3. 0.2 Ga 0.8 As lower waveguide layer 4, and the Al 0.2 Ga 0.8 The doping concentration of As in the lower waveguide layer 4 is 2E18 atoms / cm 3 The silicon atoms are doped with Si2H6 as the silicon doping source, and are introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0104] (5) When the growth chamber temperature drops to 660℃, TMIn, TMGa and AsH3 are continuously introduced. The molar ratio of TMIn to TMGa is 3:17, and the ratio of the sum of the molar amounts of TMIn and TMGa to the molar amount of AsH3 is 1:90. The growth rate is In step (4) Al 0.2 Ga 0.8 On the As lower waveguide layer 4 grows an In 0.15 Ga 0.85 As quantum well layer 5.

[0105] (6) Raise the growth room temperature to 680℃, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl and TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (5) 0.15 Ga 0.85 Al with a thickness of 20 nm is grown on the As quantum well layer 5. 0.2 Ga 0.8 As waveguide layer 6, and the Al 0.2 Ga 0.8 The doping concentration in the As upper waveguide layer 6 is 1E17 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0106] (7) Maintaining the growth room temperature at 680°C, introducing TMGa and NH3, the molar ratio of TMGa to NH3 is 1:1100, and the growth rate is In step (6) Al 0.2 Ga0.8 A GaN layer with a thickness of 80 nm is grown on the As upper waveguide layer 6, and the doping concentration in the GaN layer is 5E17 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMGa and NH3.

[0107] (8) The surface of the epitaxial wafer is patterned with positive photoresist, and then exposed and developed. The GaN layer of step (7) is etched for 60 seconds using an etching solution of sulfuric acid: hydrogen peroxide: deionized water in a ratio of 1:3:5 to form a strip-shaped GaN current channel 7 with a width of 140 μm. The spacing between adjacent GaN current channels 7 is 20 μm, and the spacing (groove) between adjacent GaN current channels 7 has a depth of 80 nm.

[0108] (9) Maintaining the growth room temperature at 680°C, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl to TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al with a thickness of 150 nm is grown on the GaN current channel 7 in step (8). 0.2 Ga 0.8 As waveguide layer 6, so that the GaN current channel 7 is covered on the Al 0.2 Ga 0.8 As in the upper waveguide layer 6, and the Al 0.2 Ga 0.8 The doping concentration in the As upper waveguide layer 6 is 1E17 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0109] (10) Maintaining the growth room temperature at 680°C, TMAl, TMGa and AsH3 were introduced, the molar ratio of TMAl to TMGa was 4:1, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 was 1:120, and the growth rate was In step (9) Al 0.2 Ga 0.8 A 1.5 μm thick Al layer is grown on the As upper waveguide layer 6. 0.8 Ga 0.2 AsP confinement layer 8, and the Al 0.8 Ga 0.2 The AsP confinement layer 8 is doped with a concentration of 3E18 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0110] (11) When the growth chamber temperature drops to 550℃, the molar ratio of TMGa and AsH3, TMGa and AsH3 is 1:120, and the growth rate is In step (10) Al 0.8 Ga 0.2 A GaAs ohmic contact layer 9 with a thickness of 300 nm is grown on the AsP confinement layer 8, and the doping concentration in the GaAs ohmic contact layer 9 is 3E19 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa, and AsH3. The GaAs-based laser epitaxial wafer with GaN current channel is obtained. The structural diagram thereof is shown in FIG. Figure 1 and Figure 2 .

[0111] Example 6

[0112] A method for preparing a GaAs-based laser epitaxial wafer having a GaN current channel, comprising:

[0113] (1) Place a GaAs substrate 1 in a growth chamber of an MOCVD device with a H2 atmosphere, heat the growth chamber to 770°C and bake for 40 minutes, then introduce AsH3 gas to perform high-temperature heat treatment on the GaAs substrate 1 to remove water and oxygen on the substrate surface and prepare for step (2).

[0114] (2) The temperature of the growth chamber was lowered to 730°C, and then TMGa and AsH3 were introduced, with a molar ratio of TMGa to AsH3 of 1:120, and a growth rate of A GaAs buffer layer 2 with a thickness of 250 nm is grown on the GaAs substrate 1, and the doping concentration in the GaAs buffer layer 2 is 1E18 atoms / cm 3 The silicon atoms are doped with Si2H6 as the silicon doping source, and are introduced into the growth chamber together with the TMGa and AsH3.

[0115] (3) When the growth chamber temperature drops to 650℃, TMAl, TMGa and AsH3 are introduced, the molar ratio of TMAl to TMGa is 9:11, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al2O3 with a thickness of 2.5 μm is grown on the GaAs buffer layer 2 in step (2). 0.45 Ga 0.55 AsN confinement layer 3, and the Al 0.45 Ga 0.55 The doping concentration in the AsN confinement layer 3 is 8E17 atoms / cm 3The silicon atoms are doped with Si2H6 as the silicon doping source, and are introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0116] (4) Raise the growth room temperature to 680℃, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl and TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (3) Al 0.45 Ga 0.55 Al with a thickness of 700 nm is grown on the AsN confinement layer 3. 0.2 Ga 0.8 As lower waveguide layer 4, and the Al 0.2 Ga 0.8 The doping concentration in the As lower waveguide layer 4 is 5E17 atoms / cm 3 The silicon atoms are doped with Si2H6 as the silicon doping source, and are introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0117] (5) When the growth chamber temperature drops to 660℃, TMIn, TMGa and AsH3 are continuously introduced. The molar ratio of TMIn to TMGa is 3:17, and the ratio of the sum of the molar amounts of TMIn and TMGa to the molar amount of AsH3 is 1:90. The growth rate is In step (4) Al 0.2 Ga 0.8 On the As lower waveguide layer 4 grows an In 0.15 Ga 0.85 As quantum well layer 5.

[0118] (6) Raise the growth room temperature to 680℃, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl and TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is In step (5) 0.15 Ga 0.85 Al with a thickness of 20 nm is grown on the As quantum well layer 5. 0.2 Ga 0.8 As waveguide layer 6, and the Al 0.2 Ga 0.8 The doping concentration in the As upper waveguide layer 6 is 5E17 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0119] (7) Maintaining the growth room temperature at 680°C, introducing TMGa and NH3, the molar ratio of TMGa to NH3 is 1:1100, and the growth rate is In step (6) Al 0.2 Ga 0.8 A GaN layer with a thickness of 80 nm is grown on the As upper waveguide layer 6, and the doping concentration in the GaN layer is 1E17 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMGa and NH3.

[0120] (8) The surface of the epitaxial wafer is patterned with positive photoresist, and then exposed and developed. The GaN layer of step (7) is etched for 60 seconds using an etching solution of sulfuric acid: hydrogen peroxide: deionized water in a ratio of 1:3:5 to form a strip-shaped GaN current channel 7 with a width of 140 μm. The spacing between adjacent GaN current channels 7 is 20 μm, and the spacing (groove) between adjacent GaN current channels 7 has a depth of 80 nm.

[0121] (9) Maintaining the growth room temperature at 680°C, continue to introduce TMAl, TMGa and AsH3, the molar ratio of TMAl to TMGa is 1:4, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 is 1:120, and the growth rate is Al with a thickness of 150 nm is grown on the GaN current channel 7 in step (8). 0.2 Ga 0.8 As waveguide layer 6, so that the GaN current channel 7 is covered on the Al 0.2 Ga 0.8 As in the upper waveguide layer 6, and the Al 0.2 Ga 0.8 The doping concentration in the As upper waveguide layer 6 is 5E17 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0122] (10) Maintaining the growth room temperature at 680°C, TMAl, TMGa and AsH3 were introduced, the molar ratio of TMAl to TMGa was 4:1, the ratio of the sum of the molar amounts of TMAl and TMGa to the molar amount of AsH3 was 1:120, and the growth rate was In step (9) Al 0.2 Ga 0.8 A 1.5 μm thick Al layer is grown on the As upper waveguide layer 6. 0.8 Ga 0.2 AsP confinement layer 8, and the Al 0.8 Ga 0.2The AsP confinement layer 8 is doped with a concentration of 1E18 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa and AsH3.

[0123] (11) When the growth chamber temperature drops to 550℃, the molar ratio of TMGa and AsH3, TMGa and AsH3 is 1:120, and the growth rate is In step (10) 0.8 Ga 0.2 A GaAs ohmic contact layer 9 with a thickness of 300 nm is grown on the AsP confinement layer 8, and the doping concentration in the GaAs ohmic contact layer 9 is 9E18 atoms / cm 3 The carbon doping source is CBr4, which is introduced into the growth chamber together with the TMAl, TMGa, and AsH3. The GaAs-based laser epitaxial wafer with GaN current channel is obtained. The structural diagram thereof is shown in FIG. Figure 1 and Figure 2 .

[0124] Performance Testing

[0125] Examples 1-6 were fabricated into chips using the same die process. The chips were then packaged onto a COS heat sink using In solder. The samples were tested at room temperature under a continuous operating current of 15A. Fifteen COS chips from each sample were subjected to a continuous aging test at 22A for 240 hours. The power change after aging was monitored, and the results are shown in Table 1. It can be seen that the lasers of the GaAs-based laser epitaxial wafers with GaN current channels prepared in Examples 1-6 can maintain high power even under long-term continuous operation, effectively overcoming the problem of severe power attenuation caused by long-term operation of GaN lasers.

[0126] Table 1

[0127]

[0128] Finally, it should be noted that any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention. Although the above description of the specific embodiments of the present invention is combined with the accompanying drawings, it is not intended to limit the scope of protection of the present invention. Those skilled in the art should understand that various modifications or variations made by those skilled in the art on the basis of the technical solution of the present invention without expending creative effort are still within the scope of protection of the present invention.

Claims

1. A GaAs-based laser epitaxial wafer with a GaN current channel, characterized in that: The invention comprises a GaN current channel, and the GaN current channel is buried in the upper waveguide layer in the epitaxial wafer; the upper waveguide layer is arranged on the substrate layer; the substrate layer comprises, from bottom to top, a GaAs substrate, a GaAs buffer layer, an Alx1Ga1-x1As N confinement layer, an Alx2Ga1-x2As lower waveguide layer, and an Iny1Ga1-y1As quantum well layer; the upper waveguide layer is covered on the Iny1Ga1-y1As quantum well layer, the upper waveguide layer is covered with an Alx4Ga1-x4As P confinement layer, and the Alx4Ga1-x4As P confinement layer is covered with a GaAs ohmic contact layer; wherein: 0.3≤x1≤0.5, 0.1≤x2≤0.3, 0.1≤y1≤0.3, and 0.7≤x4≤0.

9.

2. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 1, characterized in that: A plurality of GaN current channels are distributed in the upper waveguide layer at intervals and in parallel with each other.

3. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 2, characterized in that: The GaN current channel is doped with carbon atoms.

4. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 3, characterized in that: The doping concentration of the carbon atoms is 1E17-5E17 atoms / cm 3 .

5. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 1, characterized in that: The material of the upper waveguide layer includes Alx3Ga1-x3As, 0.1≤x3≤0.

3.

6. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 1, characterized in that: The upper waveguide layer is doped with carbon atoms.

7. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 6, characterized in that: The doping concentration is 1E17-5E17 atoms / cm 3 .

8. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 1, characterized in that: The Alx2Ga1-x2As lower waveguide layer is doped with silicon atoms.

9. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 8, characterized in that: The doping concentration of the silicon atoms is 5E17~2E18 atoms / cm 3 .

10. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 1, characterized in that: The Alx4Ga1-x4AsP confinement layer is doped with carbon atoms.

11. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 10, characterized in that: The doping concentration of the carbon atoms is 1E18~3E18 atoms / cm 3 .

12. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 1, characterized in that: The GaAs buffer layer is doped with silicon atoms.

13. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 12, characterized in that: The doping concentration of the silicon atoms is 1E18~3E18 atoms / cm 3 .

14. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 1, characterized in that: The Alx1Ga1-x1AsN confinement layer is doped with silicon atoms.

15. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 14, characterized in that: The doping concentration of the silicon atoms is 8E17~2E18 atoms / cm 3 .

16. The GaAs-based laser epitaxial wafer with a GaN current channel according to claim 1, characterized in that: The GaAs ohmic contact layer is doped with carbon atoms; the doping concentration of the carbon atoms is 9E18~5E19 atoms / cm 3 .

17. The GaAs-based laser epitaxial wafer with a GaN current channel according to any one of claims 1 to 16, characterized in that: The thickness of the GaAs buffer layer is controlled between 100 and 300 nm.

18. The GaAs-based laser epitaxial wafer with a GaN current channel according to any one of claims 1 to 16, characterized in that: The thickness of the Alx1Ga1-x1AsN confinement layer is controlled between 2 and 3 μm.

19. The GaAs-based laser epitaxial wafer with a GaN current channel according to any one of claims 1 to 16, characterized in that: The thickness of the Alx2Ga1-x2As lower waveguide layer is controlled to be 500~800nm.

20. The GaAs-based laser epitaxial wafer with a GaN current channel according to any one of claims 1 to 16, characterized in that: The thickness of the Iny1Ga1-y1As quantum well layer is controlled between 5 and 10 nm.

21. The GaAs-based laser epitaxial wafer with a GaN current channel according to any one of claims 1 to 16, characterized in that: The thickness of the upper waveguide layer is controlled between 90 and 250 nm.

22. The GaAs-based laser epitaxial wafer with a GaN current channel according to any one of claims 1 to 16, characterized in that: The thickness of the GaN current channel is controlled between 10 and 100 nm.

23. The GaAs-based laser epitaxial wafer with a GaN current channel according to any one of claims 1 to 16, characterized in that: The thickness of the Alx4Ga1-x4AsP confinement layer is controlled between 1 and 3 μm.

24. The GaAs-based laser epitaxial wafer with a GaN current channel according to any one of claims 1 to 16, characterized in that: The thickness of the GaAs ohmic contact layer is controlled between 100 and 300 nm.

25. The method for preparing a GaAs-based laser epitaxial wafer having a GaN current channel according to any one of claims 1 to 24, comprising the following steps: (1) Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 760~780℃ and bake it, then introduce AsH3 to perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen on the substrate surface; (2) When the reaction temperature drops to 720~750℃, a GaAs buffer layer is grown on a GaAs substrate under the conditions of TMGa and AsH3; (3) When the reaction temperature drops to 640-680°C, an Alx1Ga1-x1AsN confinement layer is grown on the GaAs buffer layer under the conditions of TMAl, TMGa and AsH3; (4) Continuing to maintain the temperature at 640-680 °C, under the conditions of TMAl, TMGa and AsH3, an Alx2Ga1-x2As lower waveguide layer is grown on the Alx1Ga1-x1As N confinement layer; (5) Continuously maintaining the temperature at 640-680°C, growing an Iny1Ga1-y1As quantum well layer on the Alx2Ga1-x2As lower waveguide layer under the conditions of TMIn, TMGa and AsH3; (6) Continuously maintaining the temperature at 640-680° C., under the conditions of TMAl, TMGa and AsH 3 , growing an Al x 3 Ga 1-x 3 As upper waveguide layer on the In y 1 Ga 1-y 1 As quantum well layer; (7) Continuously maintaining the temperature at 640-680°C, growing a GaN layer on the Alx3Ga1-x3As upper waveguide layer under the conditions of TMGa and NH3; (8) Etching the GaN layer to form strip-shaped and spaced GaN current channels; (9) Maintaining the temperature at 640-680°C, under the conditions of TMAl, TMGa and AsH3, continue to grow the Alx3Ga1-x3As upper waveguide layer to bury the GaN current channel therein; (10) Continuing to maintain the temperature at 640-680°C, under the conditions of TMAl, TMGa and AsH3, an Alx4Ga1-x4As P confinement layer is grown on the Alx3Ga1-x3As upper waveguide layer in step (9); (11) When the reaction temperature drops to 540-560° C., a GaAs ohmic contact layer is grown on the Alx4Ga1-x4AsP confinement layer under the conditions of TMGa and AsH3 to obtain the epitaxial wafer.

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