Devices and methods for the physical transfer of fragile microelectronic components

Abstract

This application relates to apparatus and methods for the physical transfer of fragile microelectronic components. An apparatus for picking up monolithic microelectronic components from a support structure is disclosed, the apparatus comprising a pickup having at least two vacuum channels leading to different portions of a pickup surface of the pickup and selectively communicating with at least one vacuum source. The apparatus further comprises a controller programmed to initiate communication between the at least one vacuum source and at least one of the at least two vacuum channels at a given time, and to initiate communication between the at least one vacuum source and at least another of the at least two vacuum channels at a subsequent time. A method of operation is also disclosed.

Description

[0001] Priority requirements

[0002] This application claims priority to U.S. Provisional Patent Application Serial No. 63 / 119,935, filed on December 1, 2020, entitled "Apparatus and Method for Physical Transfer of Fragile Microelectronic Components". Technical Field

[0003] The embodiments disclosed herein relate to apparatus and methods for physically transferring fragile microelectronic components. More specifically, the embodiments disclosed herein relate to apparatus and methods for picking up monolithic fragile microelectronic components from a support structure. Background Technology

[0004] As the performance of electronic devices and systems improves, there is a growing demand for improved performance of microelectronic components in such devices and systems while maintaining or even reducing the shape factors (e.g., length, width, and height) of these components. This demand is typically (but not limited to) associated with mobile devices and high-performance systems. To maintain or reduce the footprint and height of microelectronic components (e.g., semiconductor dies), three-dimensional (3D) assemblies equipped with so-called through-silicon vias (TSVs) have become more common. These assemblies provide vertical electrical (e.g., signal, power, ground / bias) connectivity between stacked components by reducing component thickness and using pre-formed and in-situ formed dielectric materials in the bonding lines (e.g., spaces between stacked components), while increasing bonding line uniformity. Such pre-formed dielectric materials include, for example, so-called non-conductive films (NCFs) and wafer-level underfill (WLUFs), terms often used interchangeably. In-situ formed dielectric materials can contain silicon oxide as well as very thin polymers. While effectively reducing the height of 3D microelectronic component assemblies, reducing the thickness of microelectronic components (e.g., semiconductor dies) to about 50 μm or less increases the device's brittleness and sensitivity to microfractures and stress-induced cracking, such as compressive (e.g., shock) stresses from contact with processing equipment, and tensile and bending stresses experienced, for example, during pick-up and placement operations using a vacuum to pick up microelectronic components from a support structure with a pick-up head or "pickup device". Non-limiting examples of microelectronic component assemblies containing multiple stacked thin microelectronic components that may suffer stress-induced cracking include assemblies of semiconductor memory dies, either individually or in combination with other die functions (e.g., logic), including so-called high-bandwidth memory (HBMx), hybrid memory cubes (HMC), and chip-to-wafer (C2W) assemblies. Summary of the Invention

[0005] Embodiments of this disclosure include an apparatus for picking up monolithic microelectronic components from a support structure. The apparatus includes a pickup mounted at the distal end of a pickup arm, the pickup including at least two vacuum channels leading to different portions of a pickup surface. At least one vacuum source is selectively connected to the at least two vacuum channels, and a controller is programmed to initiate communication between the at least one vacuum source and at least one of the at least two vacuum channels at a given time, and subsequently initiate communication between the at least one vacuum source and at least the other of the at least two vacuum channels.

[0006] Embodiments of this disclosure include a method for removing a monolithic microelectronic component from a support, the method comprising: adhering the currently laterally separated monolithic microelectronic components to an upper surface of a support structure; positioning a pickup head above and close to a target monolithic microelectronic component; enabling a vacuum through a set of vacuum channels leading to a pickup surface of the pickup head above a portion of the target monolithic microelectronic component; and subsequently enabling a vacuum through one or more other sets of vacuum channels leading to the pickup surface of the pickup head above one or more other portions of the target monolithic microelectronic component. Attached Figure Description

[0007] Figure 1 It is a line drawing of a micrograph showing an uneven peeling of a semiconductor die from the mounting tape;

[0008] Figure 2 These are micrographs of semiconductor dies damaged by uneven stress applied to the die during the die pick-up and ejection process.

[0009] Figure 3 This is a schematic partial cross-sectional side view of a portion of a pickup and placement device according to an embodiment of the present disclosure;

[0010] Figure 3A yes Figure 3 A schematic diagram of the pickup surface of the device's pickup unit, and Figure 3B This is a schematic diagram of the side cross-section of the pickup;

[0011] Figures 4A to 4F The use according to this disclosure is illustrated schematically. Figure 3 , 3A Examples of a sequence of methods for removing microelectronic components from a mounting film using a 3B pick-up and placement device;

[0012] Figure 5 , 5A 5B schematically depicts another embodiment of a sequence of methods for removing microelectronic components from a mounting film using pick-up and place devices of different configurations according to this disclosure;

[0013] Figure 6 This is a schematic diagram of a pickup and placement device according to an embodiment of the present disclosure; and

[0014] Figure 7 This is a flowchart of a method for picking up a semiconductor die according to an embodiment of the present disclosure. Detailed Implementation

[0015] An embodiment of a device configured with multiple different vacuum channels is disclosed. The channels can be connected to different vacuum sources that can operate at different times and in different sequences to release microelectronic components (e.g., semiconductor dies) from a support structure to which the microelectronic components are attached, while reducing stress differences on different portions of the semiconductor die.

[0016] The following description provides specific details, such as size, shape, and orientation, to provide a comprehensive description of embodiments of this disclosure. However, those skilled in the art will understand that embodiments of this disclosure can be practiced without these specific details, as they can be practiced in conjunction with conventional manufacturing techniques used in industry. Furthermore, the description provided below may not form a complete process flow for the physical transfer of microelectronic components or for the apparatus used to achieve such physical transfer. Only those process actions and structures necessary for understanding embodiments of this disclosure are described in detail below. Additional actions for transferring microelectronic components or manufacturing complete apparatus as described herein can be performed using conventional manufacturing processes.

[0017] The accompanying drawings provided herein are for illustrative purposes only and are not intended to be actual views of any particular material, component, structure, device, or system. Variations in the shapes depicted in the drawings are expected as a result of, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shapes or areas illustrated, but rather include, for example, shape deviations due to manufacturing processes. For example, an area illustrated or described as box-shaped may have rough and / or non-linear characteristics, while an area illustrated or described as circular may contain some rough and / or linear characteristics. Furthermore, acute angles between illustrated surfaces may be rounded, and vice versa. Therefore, the areas shown in the drawings are schematic in nature, and their shapes are not intended to show the precise shape of the areas and do not limit the scope of the claims. The drawings are not necessarily drawn to scale.

[0018] Embodiments can be described based on processes depicted as flowcharts, diagrams, structural diagrams, or block diagrams. While a flowchart may describe actions as a sequential process, many of these actions may be performed in parallel or substantially simultaneously in another order. Furthermore, the order of actions can be rearranged. A process may correspond to a method, thread, function, flow, subroutine, subroutine, other structure, or a combination thereof. Moreover, the methods disclosed herein can be implemented in hardware, software, or both. If implemented in software, the functionality may be stored or transmitted as one or more instructions or codes on a computer-readable medium. Computer-readable media includes computer storage media and communication media, with communication media including any media that facilitates the transfer of a computer program from one place to another.

[0019] In the specification, for convenience, in some cases, the same or similar reference numerals may be used to identify features and elements common to the various figures.

[0020] Any reference to elements in this document using names such as "first," "second," etc., does not limit the number or order of these elements unless such limitation is explicitly stated. Rather, these names are used herein as a convenient way to distinguish two or more elements or instances of elements. Therefore, references to a first element and a second element do not imply that only two elements can be used there, or that the first element must somehow precede the second element. Additionally, unless otherwise stated, a group of elements may include one or more elements.

[0021] Now refer to the attached diagram. Figure 1 and 2As a specific background to embodiments of this disclosure, and as stated above, as package size requirements (i.e., form factor) become smaller, not only the area occupied, but also the thickness of each microelectronic component (e.g., semiconductor die) in the stacked assembly must be reduced. Semiconductor dies as thin as approximately 50 μm have been commercialized, and semiconductor dies as thin as approximately 30 μm or smaller (e.g., approximately 20 μm) are under development. In particular, when memory devices contain a large number (e.g., 8, 12, 16 or more) of stacked memory dies combined with logic dies, as well as other combinations of stacked dies, there is a current trend toward thinner microelectronic components in the form of semiconductor dies, as there is a need to maintain or even reduce the stack height, for example, in mobile devices. Such ultrathin dies can be used in conjunction with the implementation of near-zero bonding line (NZB) spacing between adjacent stacked dies. One example of NZB development involves using plasma-activated silicon oxide or ultrathin polymers from the die as bonding line dielectrics to perform hybrid bonding between adjacent stacked dies, and maintaining metal-to-metal contact interfaces through bonding lines between the circuits of adjacent stacked dies. Reducing stress on such ultrathin dies during processing becomes more significant in preventing yield losses (i.e., the percentage of defective dies produced from a given wafer or other substrate, or a batch of wafers or substrates) caused by processing ultrathin dies during chip-to-wafer (C2W) or multi-die stacking processes (e.g., thermoforming).

[0022] While many sources of processing-induced microcracks and breakage of microelectronic components are known, a particular damage-causing mechanism becomes apparent when the thickness of these components is reduced to below approximately 60-65 μm, and this mechanism has evolved into a significant problem as the component thickness is further reduced. As is well known to those skilled in the art, a large number of microelectronic components in the form of semiconductor dies can be fabricated on semiconductor (e.g., silicon) wafers. After forming integrated circuits at laterally spaced die locations, along with optional conductive through-silicon vias (TSVs) extending from the integrated circuits toward the back of the wafer, in and on a so-called active surface, the wafer is thinned from an initial thickness typically in the range of 600 μm to 700 μm to a final, significantly reduced thickness of approximately 50 μm, thereby exposing the ends of the TSVs (if present). Subsequently, using, for example, a diamond-coated wafer saw, plasma cutting, or a so-called "stealth" cutting process, the thinned wafer, adhesively fixed to a support structure, is separated or "monodilated" into discrete semiconductor dies. This support structure is peripherally supported on a membrane frame in the form of a polymer mounting film (sometimes called a "mount tape"). After monolithization, the mounting film is laterally stretched across the frame to separate the monolithized dies, which are then picked up one by one from the mounting film by a pickup having a vacuum channel connected to a vacuum source and leading to a pickup face closely approaching each target die. In many cases, when a vacuum is initiated in the vacuum channel, along with the upward movement of the pickup, an ejector is used to push the die to be picked up from under the mounting film upwards, facilitating the release of the die from the adhesive of the film.

[0023] Typically, when picking up a semiconductor die from the adhesive on the mounting film using a conventional pick-up device containing multiple vacuum channels, a substantially uniform vacuum is applied to the die and across the die coverage area through all the vacuum channels, which lead to the downward-facing pick-up surface directly above the semiconductor die. However, it has been determined that the central region of the picked-up semiconductor die is more easily released from the mounting film adhesive than the peripheral region. In the case of picking up thin semiconductor dies, such as those approximately 50 μm thick, this can lead to damage or even breakage of the die. Figure 1 This demonstrates the uneven peeling of the DP from the adhesive film, while... Figure 2A fractured die BD from the mounting film after an unsuccessful die pick-up is shown. This phenomenon occurs in response to stress on the semiconductor material of the die between the central region of the die that moves upward with the pick-up head and one or more peripheral regions of the die that remain adhered to the adhesive on the mounting film as the pick-up face pulls the die upward from the mounting film. In other words, the tensile and bending stresses between the central region of the semiconductor die, which is held to the pick-up face and released from the film adhesive, and the peripheral regions that remain adhered to the mounting film can cause microcracks or even breakage of the semiconductor die.

[0024] Now for reference Figure 3 , 3A Figures 3B and 3B illustrate a first embodiment of the apparatus and method of this disclosure for solving the aforementioned problems. Figure 3 The diagram shows a portion of a pickup and placement device 100. In the relevant section, the pickup and placement device 100 is configured to support a mounting film 102, which can also be characterized as a mounting strip having an adhesive material 104 thereon, the adhesive material 104 being peripherally mounted to a film frame 106. As shown, the mounting film 102, with monolithic semiconductor dies SD adhered thereto, has been laterally stretched to increase the spacing S between laterally adjacent semiconductor dies SD, facilitating the removal of individual semiconductor dies SD by the pickup 110. A multi-stage ejector 120 is depicted below the semiconductor die SD to which the pickup 110 is aligned.

[0025] Figure 3A and 3B The pickup 110 is schematically depicted, comprising a first central group of vacuum channels 112 and a second peripheral group of vacuum channels 114 surrounding the first group of vacuum channels 112. Each group of vacuum channels may be located in a separately formed block of material, such as... Figure 3 and 3A As shown in Interface I, it is then assembled with another block and connected to the dedicated manifolds for the vacuum channels of said block. (See reference...) Figure 3 It is understood that the length and width of the pickup surface 116 of the pickup unit 110 are slightly smaller than the similar dimensions (i.e., floor area) of the target semiconductor die SD to be picked up. A first set of vacuum channels 112 and a second set of vacuum channels 114 lead to the pickup surface 116, respectively. The first set of vacuum channels 112 and the second set of vacuum channels are selectively and individually connected to one or more vacuum sources via vacuum lines and control valves. The control valves can be operated by a drive motor, which is responsive to a controller. The controller includes one or more processors and an associated memory storing operating programs for the pickup and placement device 100, as shown in the accompanying drawings. Figure 6 and 7The structure and operation of the foregoing embodiments and the embodiments described below are described in more detail. It is conceivable that, instead of the second peripheral group vacuum channel 114, the peripheral slit channel leading to the pickup surface 116 of the pickup 110 can be used to apply a vacuum. Therefore, the term "group" of vacuum channels refers to and includes a single channel, or a smaller number of channels (e.g., multiple slits), for applying a vacuum on a surface area substantially equal to the surface area to which the multiple smaller channels lead.

[0026] Furthermore, in another implementation, the peripheral vacuum channels can each be configured as “L”-shaped channels, each channel spanning corners and adjacent portions to be positioned accordingly to abut against each of the four corners of the semiconductor die to be picked up.

[0027] Now for reference Figures 4A to 4F The following will describe die pickup operations according to embodiments of the present disclosure. Figure 4A In this process, a vacuum is applied to the peripheral vacuum slit 122 of the multi-stage die ejector 120 outside the die coverage area to fix the mounting film 102 and the semiconductor die SD adhered thereto by adhesive 104. Figure 4B In the middle, the pickup 110 consists of the pickup arm (not shown, see pickup and placement device 100) of the pickup and placement device 100. Figure 6 (Decrease.) Figure 4C In this process, a vacuum is applied by the pickup surface 116 of the pickup unit 110, as indicated by the peripheral arrows through the second peripheral vacuum channel 114. Figure 4D In the middle, the outer stage ejector component 124 of the multi-stage ejector 120 falls from below the mounting membrane 102, and then as... Figure 4E As shown, the pickup 110 is slightly raised (e.g., about 50 μm or less, as programmed) in accordance with the extension of the outer stage ejector member 124 of the multi-stage ejector 120, to facilitate the peeling of the peripheral portion of the semiconductor die SD adjacent to its lateral edge under the action of the vacuum force applied from the adhesive 104 on the mounting film 102 through the peripheral vacuum channel 114. Figure 4FAs shown, while maintaining a vacuum through the second set of vacuum channels 114, a vacuum is applied through the first set of vacuum channels 112, as indicated by the three central arrows. Simultaneously, the extensions of the pickup 110 and the intermediate-stage ejector member 126 and inner-stage ejector member 128 of the multi-stage ejector 120 are raised to reduce the contact area between the adhesive 104 and the underside of the semiconductor die SD. Therefore, during the removal of the semiconductor die SD from the mounting film 102, the vacuum applied by the first set of vacuum channels 112 and the second set of vacuum channels 114 on the pickup surface 116 of the pickup 110 substantially uniformly fixes the surface of the semiconductor die SD to the pickup surface 116, thereby reducing or eliminating stress caused by conventional techniques that readily pull different (i.e., laterally spaced) surface portions of the adhesive respectively fixed to the pickup surface and the mounting film.

[0028] In other implementations of the aforementioned method, it is conceivable that the ejector components 124, 126, 128 of the multi-stage ejector 120 may extend before the pickup 110 applies a vacuum, or that a vacuum may be applied through one or two sets of vacuum channels 112, 114 before the multi-stage ejector is activated.

[0029] In some implementations of embodiments of this disclosure, it is also conceivable that the vacuum applied through vacuum channels 112 and 114 may be rapidly and intermittently pulsed open and closed for a short period of time to further facilitate the release of the target semiconductor die SD from the adhesive 104 by subsequent application of vacuum. Additionally, vacuum channels 112, 114 may be intermittently pulsed with vacuum and positive air pressure to loosen the target semiconductor die SD before subsequent application of vacuum. Therefore, the term "vacuum source" as used herein refers to and includes not only devices configured to supply vacuum but also optionally devices configured to supply positive air pressure to the respective sets of vacuum channels 112, 114. It is also conceivable that when the mounting membrane 102 is held on the multi-stage ejector 120 by a vacuum applied through the peripheral vacuum slit 122, the ejector members 124, 126, and 128 of the multi-stage ejector 120 may similarly pulse sequentially upward and downward to facilitate the release of the target semiconductor die SD.

[0030] Now for reference Figure 5 and 5A A second embodiment of the apparatus 200 and method of this disclosure for solving the aforementioned problems is shown. Figure 5The diagram shows a portion of the pickup and placement device 200. In the relevant section, the pickup and placement device 200 is configured to support a mounting film 102, which can also be characterized as a mounting strip having an adhesive material 104 thereon, the adhesive material 104 being peripherally mounted to a film frame 106. As shown, the mounting film 102, with monolithic semiconductor dies SDs adhered thereto, has been stretched to increase the spacing S between laterally adjacent semiconductor dies SDs, facilitating the removal of individual semiconductor dies SDs by the pickup 210. A multi-stage die ejector 120 is depicted below the semiconductor die SDs aligned with the pickup 210.

[0031] Figure 5A A pickup 210 is schematically depicted, comprising multiple sets (e.g., five sets) of linearly arranged, parallel vacuum channels 212, 214, 216, 218, and 220, each set adjacent to one or more other sets extending from one side of the pickup surface 222 to the other, oriented laterally to the linear orientation of said sets. Figure 5A As shown in Interface I, each set of vacuum channels 212, 214, 216, 218, and 220 can be formed in a separate material block for subsequent assembly with other blocks and connected to a dedicated manifold for each set of vacuum channels. (See reference...) Figure 5 It will be understood that the length and width of the pickup surface 222 of the pickup unit 210 are slightly smaller than the similar dimensions (i.e., footprint) of the semiconductor die SD to be picked up. The first to fifth sets of vacuum channels 212, 214, 216, 218, and 220 lead to the pickup surface 222. Each set of vacuum channels 212, 214, 216, 218, and 220 is selectively and individually connected to one or more vacuum sources via vacuum lines and control valves. The control valves can be operated by a drive motor responsive to the operation of a controller, which includes one or more processors and an associated memory storing operating programs for the pickup and placement device 200, as shown in the accompanying drawings. Figure 6 and 7 The structure and operation of this embodiment and the embodiments described above are described in more detail.

[0032] Now refer to the attached diagram. Figure 5 and 5A This section will describe die pickup operations according to embodiments of the present disclosure. Figure 3 , 3AUnlike the embodiment of 3B, after a vacuum is applied to the underside of the mounting film 102 via the peripheral vacuum slit 122 of the multi-stage ejector 120, the pickup surface 222 of the pickup 210 is lowered to be very close to (e.g., about 50 μm or less) the semiconductor die SD. Initially, a vacuum is applied through the linear group vacuum channels 212 to elevate the alignment portion of the semiconductor die SD. While maintaining the vacuum through the vacuum channels 212, a vacuum is applied through the linear group vacuum channels 214, followed by sequential applications of vacuum through the respective groups of vacuum channels 216, 218, and 220, while maintaining the vacuum previously applied through the previous groups of vacuum channels. Using this vacuum channel arrangement and the sequential application of vacuum through the respective groups of vacuum channels 212, 214, 216, 218, and 220, the semiconductor die SD can be “peeled” from one side of the semiconductor die SD to the opposite side from the mounting film 102. The close proximity of the vacuum forces applied sequentially by the respective groups of vacuum channels 212, 214, 216, 218, and 220 can be used to minimize stress between adjacent portions of the semiconductor die SD, and thus minimize the possibility of cracking or micro-cracks. It is conceivable that, instead of multiple groups of vacuum channels arranged linearly, linear slit vacuum channels could be used in the pickup surface 222 to apply vacuum to target portions of the semiconductor die. Therefore, the term "group" of vacuum channels refers to and includes a single channel, or a smaller number of channels (e.g., multiple slits), for applying vacuum to a surface area substantially equal to the surface area to which multiple smaller channels lead.

[0033] In one implementation, it is conceivable that the previously mentioned... Figure 3 The described multi-stage ejector 120 enhances the movement of multiple portions of the mounting membrane 102 toward the pickup surface 222 of the pickup 210. However, it is also conceivable that, instead of employing an outer ejector component, an intermediate ejector component, and a central ejector component, a multi-stage ejector 120 could be used, and referenced to… Figure 5 and 5BThe multi-stage ejector 130 can be configured to have the same number of linear ejector blade members 132, 134, 136, 138, and 140 as the vacuum channel groups 212, 214, 216, 218, and 220 and with corresponding lateral dimensions. Each blade member 132, 134, 136, 138, and 140 is parallel to and can be perpendicularly and laterally aligned with the linear group vacuum channels 212, 214, 216, 218, and 220 leading to the pickup surface 222 for picking up the target semiconductor die SD. Using this arrangement, the controller of the pick-and-place device 200 can be programmed such that, while activating the aligned sets of vacuum channels 212, 214, 216, 218, and 220, each blade member 132, 134, 136, 138, and 140 extends upward against the mounting film 102 via a separate driver D to facilitate the release and stripping of the semiconductor die SD from adjacent portions of the mounting film 102. In other words, when vacuum channel 212 is activated, blade member 132 extends upward so that a first linear portion of the semiconductor die SD contacts a portion of the pickup surface 222 of the pickup 210 located within vacuum channel 212. Subsequently, when vacuum channel 214 is activated, blade member 134 extends upward while vacuum channel 212 remains activated and blade member 132 is retracted. Alternatively, each successive blade assembly 132, 134, 136, 138, 140 may extend slightly further than the preceding blade assembly while having an equal vertical lift distance from the pickup 210, to facilitate the stripping of the target semiconductor die SD. This sequential operation of the vacuum channel and blade assemblies continues until the semiconductor die SD is completely stripped from the mounting film 102.

[0034] In other implementations of the aforementioned method, it is conceivable that the different stages of the blade components 132, 134, 136, 138, 140 of the multi-stage ejector 130 may extend sequentially before a vacuum is applied to the pickup surface 222 of the pickup 210, or a vacuum may be applied sequentially through some or all of the vacuum channels 212, 214, 216, 218, 220 before the multi-stage ejector 130 is activated.

[0035] In some implementations of the embodiments of this disclosure, it is further contemplated that the vacuum applied through vacuum channels 212, 214, 216, 218, 220 can be rapidly, sequentially, and intermittently pulsed open and closed for a short period of time to further facilitate the release of the target semiconductor die SD from the adhesive 104 by subsequent vacuum application. Additionally, vacuum channels 212, 214, 216, 218, 220 can be intermittently pulsed by a controller with indications of vacuum and positive pressure to release the target semiconductor die SD before subsequent vacuum application. Therefore, the term "vacuum source" as used herein refers to and includes not only devices configured to supply vacuum but also optionally devices configured to supply positive air pressure to the respective sets of vacuum channels 212, 214, 216, 218, 220. It is also conceivable that when the vacuum applied through the peripheral vacuum slit 122 holds the mounting membrane 102 on the multistage ejector 120, the ejector blade components 132, 134, 136, 138, and 140 of the multistage ejector 130 can similarly pulsate upward and downward sequentially to release the target semiconductor die SD.

[0036] While embodiments of this disclosure have been described in conjunction with the use of several multi-stage ejectors, they are not limited thereto. For example, a single-stage ejector with a single ejector component, or a single-stage ejector with multiple ejector components located near the four corners of the target semiconductor die SD, may be employed. Furthermore, as will be further described below, the use of any type of ejector may be unnecessary or undesirable.

[0037] Now refer to the attached diagram. Figure 6 The figure schematically illustrates a pickup and placement device 300 according to an embodiment of the present disclosure. As shown, the device 300 includes a pickup 302 carried at the distal end of a pickup arm 304, the pickup arm being operable to move along the X, Y, and Z translational directions and rotate about the X, Y, and Z axes via a drive motor 306. The pickup 302 includes a plurality of vacuum channels 308 extending to a pickup surface 310, the number and arrangement of which are as previously described. Figure 3 , 3A and 3B or Figure 5 and 5A The embodiments are shown and described. Vacuum channel 308 is selectively activated by control valve 312 in vacuum line 314, which leads to one or more vacuum sources 316. Control valve 312 and drive motor 306 are activated and deactivated by controller 318, which includes one or more microprocessors 320, each having associated memory 322 for storing software programmed for the operation of device 300.

[0038] The apparatus 300 further includes a stage 330 for supporting a mounting film 332 on a film frame 334. The mounting film 332 has an array of monolithically spaced, laterally spaced semiconductor dies SDs adhered thereto. These semiconductor dies SDs are provided for pickup by a pick-up device 302 and subsequently transferred to another location, such as for thermocompression bonding device joints stacked on wafers or one or more other semiconductor dies SDs. The stage 330 may also support an ejector 336, which may be positioned aligned with the pick-up device 302 and may be operated by a controller 318 in conjunction with the pick-up device 302 to facilitate removal of the semiconductor dies SDs from the mounting film 332, as previously described. As known to those skilled in the art, the pick-up device 302 and the ejector 336 may be configured to align with each other in place during each pickup as the film frame 334 moves laterally on the stage 330 (i.e., in the XY plane) to present the individual semiconductor dies SDs to be picked up. Alternatively, the membrane frame 334 can remain stationary on the stage 330, and the pick-up device 302 and the ejector 336 can move laterally in unison (i.e., in the XY plane) to pick up various semiconductor dies (SDs). As mentioned above, any type of ejector can be used as ejector 336, or ejector 336 can be omitted in some embodiments.

[0039] In another implementation, instead of presenting the semiconductor die on a mounting film for pickup, it is conceivable that the semiconductor die could be presented on a carrier wafer or other substantially rigid substrate of an electromagnetically transmissive material (e.g., glass), to which the die is adhered using a UV-sensitive or thermosensitive adhesive. In this implementation, as the pickup is suspended above and extends downwards to close proximity to the target semiconductor die, an energy source (e.g., a laser with an appropriate wavelength and sufficient power) is activated to guide the energy beam (e.g., a laser beam) from the underside of the carrier wafer and through it, thereby reducing adhesive adhesion to the target semiconductor die. Simultaneously with adhesive release, one or more sets of vacuum channels leading to the pickup surface of the pickup are activated in sequence corresponding to the programmed formulation, and as described above in the various embodiments, to achieve relatively stress-free removal of the target die from the carrier wafer.

[0040] Now for reference Figure 7This describes an operational sequence 400 of a pickup and placement device according to an embodiment of the present disclosure. In action 402, the pickup is positioned above a target semiconductor die on a support structure. In action 404, the pickup is lowered to close proximity to the target semiconductor die, and a first set of vacuum channels leading to the pickup surface of the pickup is activated to initiate a vacuum and pull a first surface portion of the target semiconductor die toward the pickup surface. In action 406, at least another set of vacuum channels is activated to initiate a vacuum and pull a second portion of the target semiconductor die toward the pickup surface, while maintaining the vacuum in the first set of vacuum channels. In optional action 408, one or more other sets of vacuum channels are activated to initiate a vacuum and pull other portions of the target semiconductor die toward the pickup surface, while maintaining the vacuum in the previous sets of vacuum channels. In optional action 410, an ejector having one or more ejector components is activated to move upward to contact a support structure in the form of a mounting film beneath the target semiconductor die, thereby facilitating the pickup to remove the target semiconductor die from the mounting film. In optional action 412, the ejector includes one or more ejector components that sequentially move upward against the mounting membrane when a vacuum is applied to the pickup surface of the pickup. In optional action 414, the ejector components are configured and positioned to align with the vacuum channels of each corresponding group and extend upward against the mounting membrane while activating the associated vacuum channel group.

[0041] Embodiments of this disclosure include an apparatus for picking up monolithic microelectronic components from a support structure. The apparatus includes a pickup mounted at the distal end of a pickup arm, the pickup including at least two vacuum channels leading to different portions of a pickup surface. At least one vacuum source is selectively connected to the at least two vacuum channels, and a controller is programmed to initiate communication between the at least one vacuum source and at least one of the at least two vacuum channels at a given time, and subsequently initiate communication between the at least one vacuum source and at least the other of the at least two vacuum channels.

[0042] Embodiments of this disclosure include a method for removing a monolithic microelectronic component from a support, the method comprising: adhering the currently laterally separated monolithic microelectronic components to an upper surface of a support structure; positioning a pickup head above and close to a target monolithic microelectronic component; enabling a vacuum through a set of vacuum channels leading to a pickup surface of the pickup head above a portion of the target monolithic microelectronic component; and subsequently enabling a vacuum through one or more other sets of vacuum channels leading to the pickup surface of the pickup head above one or more other portions of the target monolithic microelectronic component.

[0043] As used herein, the terms “comprising,” “including,” “containing,” “characterized in,” and their grammatical equivalents are inclusive or open-ended terms that do not exclude additional, unlisted elements or methodological actions, and also include the more restrictive terms “consisting of” and “substantially consisting of” and their grammatical equivalents. As used herein, the term “may” with respect to materials, structures, features, or methodological actions indicates that such terms are intended for implementation of embodiments of this disclosure, and such terms are preferred over the more restrictive term “is” to avoid any implication that other compatible materials, structures, features, and methods that may be excluded or must be excluded from use in combination with them.

[0044] As used herein, the terms “longitudinal,” “vertical,” “lateral,” and “horizontal” refer to the principal plane of a substrate (e.g., base material, base structure, base construction, etc.), within or on which one or more structures and / or features are formed, not necessarily defined by the Earth’s gravitational field. A “lateral” or “horizontal” direction is a direction substantially parallel to the principal plane of the substrate, while a “longitudinal” or “vertical” direction is a direction substantially perpendicular to the principal plane of the substrate. The principal plane of the substrate is defined by a substrate surface that has a relatively large area compared to the other surfaces of the substrate.

[0045] As used herein, for ease of description, spatially relative terms such as “below,” “under,” “lower,” “bottom,” “above,” “upper,” “top,” “front,” “back,” “left,” “right,” etc., may be used to describe the relationship of one element or feature to another, as shown in the figures. Unless otherwise specified, spatially relative terms are intended to cover different orientations of material other than those depicted in the figures. For example, if the material in the figures is inverted, an element described as “above,” “on,” “on top,” or “on the top” of other elements or features would be oriented “below,” “under,” “below,” or “on the bottom” of other elements or features. Thus, the term “above” can encompass both above and below orientations, depending on the context in which the term is used, as will be apparent to those skilled in the art. Material may be oriented in other ways (e.g., rotated 90 degrees, inverted, flipped), and the spatially relative descriptors used herein are interpreted accordingly.

[0046] As used in this article, the singular forms “a,” “an,” and “the” are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0047] As used herein, the terms “configured” and “configuration” refer to the size, shape, material composition, orientation, and arrangement of one or more of the structures and devices that facilitate the operation of one or more structures and devices in a predetermined manner.

[0048] As used herein, the term "substantially" with respect to a given parameter, property, or condition means and includes the degree to which a given parameter, property, or condition is satisfied with a range of variation (such as within acceptable manufacturing tolerances) as would be understood by one of ordinary skill in the art. For example, depending on the specific parameter, property, or condition that is substantially satisfied, the parameter, property, or condition may be satisfied at least 90.0%, at least 95.0%, at least 99.0%, or even at least 99.9%.

[0049] As used herein, “about” or “approximately” with respect to a particular parameter includes the value and the degree of variance of that value as would be understood by one of ordinary skill in the art to be within the acceptable tolerance of that particular parameter. For example, “about” or “approximately” with respect to a value may include other values ​​in the range of 90.0% to 110.0%, such as in the range of 95.0% to 105.0%, in the range of 97.5% to 102.5%, in the range of 99.0% to 101.0%, in the range of 99.5% to 100.5%, or in the range of 99.9% to 100.1%.

[0050] As used herein, the terms “layer” and “film” mean and include layers, sheets or coatings of material present on a structure, which may be continuous or discontinuous between portions of the material and may be conformal or non-conformal, unless otherwise specified.

[0051] As used herein, “substrate” means and includes a base material or structure on which additional material is formed. A substrate can be a semiconductor substrate, a base semiconductor layer on a support structure, a metal electrode, or a semiconductor substrate on which one or more materials, layers, structures, or regions are formed. Materials on a semiconductor substrate can include, but are not limited to, semiconductor materials, insulating materials, conductive materials, etc. A substrate can be a conventional silicon substrate or other bulk substrates that include layers of semiconductor material. As used herein, the term “bulk substrate” means and includes not only silicon wafers, but also silicon-on-insulator (“SOI”) substrates (such as silicon-on-sapphire (“SOS”) substrates and silicon-on-glass (“SOG”) substrates), silicon epitaxial layers on a base semiconductor pedestal, and other semiconductor or optoelectronic materials such as silicon-germanium, germanium, gallium arsenide, gallium nitride, and indium phosphide. Substrates can be doped or undoped.

[0052] As used herein, the term “may” in relation to materials, structures, features, or methodological actions indicates that such terms are intended for use in implementing embodiments of this disclosure, and such terms are preferred over the more restrictive term “yes” in order to avoid any implication that other compatible materials, structures, features, and methods that may be used in combination with them should or must be excluded.

[0053] As used herein, the term “microelectronic component” means and includes, as non-limiting examples, a semiconductor die, a die that functions through activities other than semiconductor activities, a microelectromechanical system (MEMS) device, a substrate comprising multiple dies including a conventional wafer, and other bulk substrates as described above, as well as portions of wafers and substrates comprising more than one die location.

[0054] Although certain illustrative embodiments have been described in conjunction with the accompanying drawings, those skilled in the art will recognize and understand that the embodiments covered by this disclosure are not limited to those explicitly shown and described herein. Rather, many additions, deletions, and modifications can be made to the embodiments described herein without departing from the scope of the embodiments covered by this disclosure, such as those claimed below, including legal equivalents. Furthermore, features from one disclosed embodiment may be combined with features from another disclosed embodiment while still being covered within the scope of this disclosure.

Claims

1. An apparatus for picking up monolithically mounted microelectronic components from a support structure, comprising: The pickup is mounted on the distal end of the pickup arm; The pickup includes at least two vacuum channels leading to different portions of the pickup surface; At least one vacuum source is selectively connected to the at least two vacuum channels; as well as A controller is programmed to initiate communication between the at least one vacuum source and at least one of the at least two vacuum channels at each subsequent time, and to initiate communication between the at least one vacuum source and at least another of the at least two vacuum channels at a subsequent time.

2. The device according to claim 1, wherein, The controller is programmed to maintain communication between the at least one vacuum source and the at least one of the at least two vacuum channels at and after the time at which communication with the at least one of the at least two vacuum channels begins.

3. The device according to claim 1 or claim 2, wherein, At least one of the at least two vacuum channels includes a first set of vacuum channels, and at least another of the at least two vacuum channels includes a second set of vacuum channels.

4. The device according to claim 3, wherein, Within the size coverage area of ​​the monolithic microelectronic component to be picked up, the first set of vacuum channels is located in the central region of the pickup surface, and the second set of vacuum channels is located in the peripheral region of the pickup surface.

5. The device according to claim 4, wherein, The controller is programmed to initiate communication between the at least one vacuum source and the second set of vacuum channels when the pickup surface is above and close to the microelectronic component to be picked up, and subsequently initiate communication between the at least one vacuum source and the first set of vacuum channels.

6. The device according to claim 5, wherein, The support structure includes a mounting membrane mounted to a membrane frame and the monolithic microelectronic component adhered to the mounting membrane. The device further includes a worktable supporting the membrane frame and an ejector located below the mounting membrane, the ejector being alignable with the pickup and the target monolithic microelectronic component to be picked up from the mounting membrane. The controller is programmed to initiate upward movement of at least one ejector component against the mounting membrane substantially simultaneously with activating communication between the at least one vacuum source and the second set of vacuum channels.

7. The device according to claim 6, wherein, The ejector is configured as a multi-stage ejector with multiple ejector components, and the controller is programmed to initiate the sequential upward movement of the multiple ejector components against the mounting membrane.

8. The device according to claim 7, wherein, The plurality of ejector components are arranged concentrically, and the sequential upward movement is initiated by the outermost ejector component, and the outermost ejector component moves upward to a greater extent than the adjacent ejector component to the outside.

9. The device according to claim 6, wherein, The ejector further includes at least one peripheral vacuum channel surrounding the at least one ejector component and laterally outside the area covered by the size of the monolithic microelectronic component to be picked up, and the controller is programmed to initiate communication between the at least one vacuum source and the at least one peripheral vacuum channel before initiating communication between the at least one vacuum source and the second set of vacuum channels of the pickup surface.

10. The device according to claim 1, wherein, The at least two vacuum channels comprise three or more sets of vacuum channels, each set extending linearly through the pickup surface parallel to the other sets, and the controller is programmed to initiate communication between the at least one vacuum source and at least a third set of vacuum channels sequentially from a first set of vacuum channels adjacent to the lateral edge of the pickup surface to a corresponding lateral edge of the pickup surface.

11. The device according to claim 10, wherein, The three or more sets of vacuum channels include five or more sets of vacuum channels.

12. The device according to claim 10 or claim 11, wherein, The support structure includes a mounting membrane mounted to a membrane frame and the monolithic microelectronic component adhered to the mounting membrane. The device further includes a worktable supporting the membrane frame and an ejector located below the mounting membrane, the ejector being alignable with the pickup and the target monolithic microelectronic component to be picked up from the mounting membrane. The controller is programmed to initiate upward movement of at least one ejector component against the mounting membrane substantially simultaneously with activating communication between the at least one vacuum source and the first set of vacuum channels.

13. The device according to claim 12, wherein, The ejector is configured as a multi-stage ejector with multiple ejector components, and the controller is programmed to initiate the sequential upward movement of the multiple ejector components against the mounting membrane, substantially simultaneously with the activation of the corresponding sequence of communication between the at least one vacuum source and each set of vacuum channels.

14. The device according to claim 13, wherein, The plurality of ejector components are configured as mutually parallel blade components in a number equal to the number of groups of vacuum channels, and the controller is programmed to initiate sequential upward movement of each blade component simultaneously with the activation of communication between the at least one vacuum source and a group of vacuum channels on the pickup surface aligned with each blade component.

15. The device according to claim 12, wherein, The ejector further includes at least one peripheral vacuum channel surrounding the at least one ejector component and laterally outside the area covered by the size of the monolithic microelectronic component to be picked up, and the controller is programmed to initiate communication between the at least one vacuum source and the at least one peripheral vacuum channel before initiating communication between the at least one vacuum source and any set of vacuum channels on the pickup surface.

16. The device according to claim 1, wherein, The support structure includes a substantially rigid substrate comprising an electromagnetic energy-transmitting material, to which the monolithic microelectronic component is adhered using a UV-sensitive or thermosensitive adhesive. The device further includes a stage supporting the substantially rigid substrate and an energy source having an appropriate wavelength and sufficient power to cause an energy beam to impinge on the adhesive through the underside of the substantially rigid substrate below the target monolithic microelectronic component, and substantially reduce the adhesion of the adhesive to the target monolithic microelectronic component while enabling one or more sets of vacuum channels to the pickup surface of the pickup aligned above the target monolithic microelectronic component.

17. The device according to claim 16, wherein, The energy source includes a laser, and the energy beam includes a laser beam, and the substantially rigid substrate includes a semiconductor material or glass.

18. A method for removing a monolithic microelectronic component from a support structure, the method comprising: Currently, the monolithic microelectronic components that are horizontally separated from each other are adhered to the upper surface of the supporting structure; Position the pickup head above the target monolithic microelectronic device and bring it very close to the target monolithic microelectronic component; Vacuum is enabled by a set of vacuum channels leading to the pickup surface of the pickup head above a portion of the target monolithic microelectronic component; as well as Vacuum is then activated via one or more other groups of vacuum channels leading to the pickup surface of the pickup head above one or more other parts of the target monolithic microelectronic component.

19. The method of claim 18, wherein: Enabling a vacuum via a set of vacuum channels leading to the pickup surface of the pickup head above a portion of the target monolithic microelectronic component includes: enabling a vacuum via a set of vacuum channels leading to the pickup surface above a peripheral portion of the target monolithic microelectronic component; and Enabling vacuum subsequently via one or more other sets of vacuum channels leading to the pickup surface of the pickup head above at least another portion of the target monolithic microelectronic component includes: enabling vacuum via at least another set of vacuum channels leading to the pickup surface above the central portion of the target monolithic microelectronic component.

20. The method of claim 18, wherein: Enabling vacuum via a set of vacuum channels leading to the pickup surface of the pickup head above a portion of the target monolithic microelectronic component includes: enabling vacuum via a first linear set of vacuum channels leading to the pickup surface above an aligned portion adjacent to the lateral edge of the target monolithic microelectronic component; and Enabling vacuum subsequently via one or more other sets of vacuum channels leading to the pickup surface of the pickup head above at least another portion of the target monolithic microelectronic component includes: sequentially enabling vacuum via two or more other linear, mutually parallel sets of parallel vacuum channels above the respective aligned portions of the target monolithic microelectronic component, parallel to the first linear set and leading to the pickup surface.

21. The method according to any one of claims 18, 19, or 20, wherein, The support structure is a mounting membrane supported on a membrane frame, and the method further includes: extending at least one ejector member downward in a direction to contact the mounting membrane while activating a vacuum through a set of vacuum channels leading to the pickup surface of the pickup head above a portion of the target monolithic microelectronic component.

22. The method of claim 21, further comprising: Before extending the ejector component below the target monolithic microelectronic component, the mounting film is pulled toward the ejector component by a vacuum applied to the underside of the mounting film surrounding the target monolithic microelectronic component.

23. The method of claim 21, further comprising: One or more additional ejector components are sequentially extended below the target monolithic microelectronic component to contact the mounting membrane, while the vacuum is enabled through at least another set of vacuum channels.

24. The method according to any one of claims 18, 19, or 20, wherein, The support structure includes a substantially rigid substrate comprising an electromagnetic energy-transmitting material, the monolithic microelectronic component being adhered to the electromagnetic energy-transmitting material using a UV-sensitive or thermosensitive adhesive, the method further comprising: substantially activating one or more sets of vacuum channels leading to the pickup surface of the pickup head aligned above the target monolithic microelectronic component, and impinging an energy beam having an appropriate wavelength and sufficient power through the underside of the substantially rigid substrate below the target monolithic microelectronic component onto the adhesive, thereby reducing the adhesion of the adhesive to the target monolithic microelectronic component while substantially activating one or more sets of vacuum channels leading to the pickup surface of the pickup head.

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