Light emitting device wafer structure and method of assembling a light emitting device wafer structure

Abstract

When building high resolution displays with small LED pixels less than 100 microns, monolithic LED strips (instead of discrete LED chips) reduce manufacturing time and inaccuracy. Guide strips next to the LED strips align the monolithic LED strips and increase the light emitting area. The monolithic LED strips are formed on a substrate with P and N contacts. A first transfer layer is on the upper surface of the monolithic LED strips. The first transfer layer separates the monolithic LED strips from the substrate. A second transfer layer applied to the lower surface of the monolithic LED strips separates the monolithic LED strips from the first transfer layer. A display backplane is prepared with positive electrodes, negative electrodes, positive contact pads, and negative contact pads.

Description

TECHNICAL FIELD

[0001] The present invention is in the technical field of light emitting device (LED) pixel assembly processes. The present disclosure relates to using monolithic LED strips (instead of discrete LED chips) as pixels or backlights in the fabrication of display panels. BACKGROUND

[0002] Various different LED assembly methods have been set forth in the prior art. Traditionally, one manually places discrete LED elements directly on a pixel package or display backplane. For example, in U.S. Patent No. 8,552,928 B2, issued October 8, 2013, to inventors Brett Wendler et al., entitled Sealed Pixel Assemblies, Kits and Methods. Over time, various different automated processes have improved LED pixel assembly accuracy and efficiency. However, the use of discrete LED pixels in these processes presents several drawbacks, such as: high cost, time consuming, and low yield. SUMMARY

[0003] Monolithic LED strips (instead of discrete LED chips) reduce manufacturing time and inaccuracy when building high resolution displays with small LED pixels less than 100 microns. A guide strip next to the LED strip aligns the LED strip and increases the light emitting area. The LED strip is a monolithic LED strip with multiple independent controllable LEDs. The LED strip is mounted on the display backplane in a parallel configuration of multiple adjacent LED strips to form a full color display, and the multiple adjacent LED strips are aligned parallel to each other.

[0004] A method of assembling an LED wafer structure includes the step of forming a monolithic LED strip on a substrate. The LED strip has a P-contact and an N-contact mounted on the LED strip. The LED strip has a first length, a first width, and a first height. The first length is greater than the first width, and the first width is greater than the first height. A first transfer layer is on an upper surface of the LED strip. The first transfer layer separates the LED strip from the substrate.

[0005] A second transfer layer applied to the lower surface of the LED strip separates the LED strip from the first transfer layer. A display backplane is prepared, the display backplane having a positive electrode, a negative electrode, a positive contact pad, and a negative contact pad. A positive connection wire connects the positive electrode to the positive contact pad, and a negative connection wire connects the negative electrode to the negative contact pad. A pair of guide strips includes a first guide strip and a second guide strip mounted to the display backplane. The display backplane is flexible. The LED strip is mounted between the pair of guide strips. The LED strip is detached from the second transfer layer.

[0006] The method of assembling an LED wafer structure according to the claims preferably further comprises the step of mounting a third guide strip and a fourth guide strip to the display backplane, such that a second LED strip can be installed between the third guide strip and the fourth guide strip. The first guide strip, the second guide strip, the third guide strip, and the fourth guide strip can be formed of a translucent material or a transparent material. The method can comprise the steps of forming the N contact along a first side of the LED strip, and forming the P contact along a second side of the LED strip. The method can further comprise the steps of aligning the P contact with the positive electrode and aligning the N contact with the negative electrode by engaging an inner surface of the guide strip to the first side of the LED strip and the second side of the LED strip.

[0007] When using very small pixels (less than 100 microns), it is difficult to manufacture a high resolution display including LED pixels. In the present disclosure, instead of using discrete LED chips in the display, monolithic LED strips are placed on the display to reduce manufacturing time and inaccuracy. Guide strips with auxiliary LED strips are employed to help alignment of the LED strips and increase the light emitting area.

[0008] The manufacturing procedure includes the step of transferring a monolithic LED strip to a display backplane, the monolithic LED strip not being a discrete LED chip. The monolithic LED strip is selected from a single color red LED, a green LED, a blue LED, an ultraviolet LED, or a multi-color LED. The assembly process includes the step of transferring the monolithic LED strip to the display backplane in a parallel configuration to form a full color display. Multiple parallel strips form an array. BRIEF DESCRIPTION OF DRAWINGS

[0009] Figure 1 is a schematic diagram showing an LED wafer assembly, the LED wafer assembly being a processed LED wafer having a portion of an LED strip.

[0010] Figure 2 is a detailed schematic diagram of a portion of an LED strip, showing a section of an LED.

[0011] Figure 3 is a schematic diagram of an LED tape covered with a first transfer layer.

[0012] Figure 4 is a schematic diagram showing the LED tape separated from the LED substrate after removal or thinning.

[0013] Figure 5 is a schematic diagram showing the LED tape covered with a second transfer layer on the bottom.

[0014] Figure 6 is a schematic diagram showing the first transfer layer removed from the LED tape.

[0015] Figure 7 is a schematic diagram of a display backplane showing contact pads and connecting wires formed on a flexible sheet.

[0016] Figure 8 is a schematic diagram showing a guide tape provided to the display backplane.

[0017] Figure 9 is a schematic diagram showing an LED tape provided to the display backplane by a flip chip method.

[0018] Figure 10 is a side view cross-section of an LED tape provided to a display panel.

[0019] Figure 11 is a cross-sectional view showing the second transfer layer removed to form the LED tape.

[0020] Figure 12 is a side view cross-section of the second transfer layer removed to form the LED tape.

[0021] Figure 13 is a top view and side view of a completed display panel.

[0022] Figure 14 is a cross-sectional side view of light emission from the LED tape and the guide tape.

[0023] Figure 15 is a schematic diagram of a processed LED wafer showing a pair of LED tapes mounted as individual units to show that the LED tape can also be a guide tape.

[0024] Symbol Explanation

[0025] The following list of elements can be a useful guide to refer to elements of the drawings.

[0026] 20 LED wafer

[0027] 21 LED tape

[0028] 22 LED substrate

[0029] 23 Substrate upper surface

[0030] 24 Substrate body

[0031] 25 LED strip lower surface

[0032] 26 LED strip upper surface

[0033] 27 LED strip first side

[0034] 28 LED strip second side

[0035] 31 P-contact

[0036] 32 N-contact

[0037] 33 LED segment

[0038] 34 LED segment divider

[0039] 35 LED segment upper side

[0040] 36 First LED segment

[0041] 37 Second LED segment

[0042] 38 Third LED segment

[0043] 40 First transfer layer

[0044] 41 First transfer layer upper side

[0045] 42 First transfer layer lower side

[0046] 43 First transfer layer body

[0047] 44 First separation gap

[0048] 45 Second transfer layer

[0049] 46 Second transfer layer upper surface

[0050] 47 Second transfer layer bottom surface

[0051] 48 Second separation gap

[0052] 50 Electrode

[0053] 51 Positive electrode

[0054] 52 Negative electrode

[0055] 53 Positive electrode strip

[0056] 54 Negative electrode strip

[0057] 55 positive connection wire and contact pad

[0058] 56 negative connection wire and contact pad

[0059] 57 flexible sheet

[0060] 58 display backplane

[0061] 59 flexible sheet upper surface

[0062] 60 guide strip

[0063] 61 first guide strip

[0064] 62 second guide strip

[0065] 63 third guide strip

[0066] 64 fourth guide strip

[0067] 65 fifth guide strip

[0068] 66 sixth guide strip

[0069] 67 third separation gap

[0070] 81 first guide strip side light

[0071] 82 second guide strip light transmission

[0072] 83 third guide strip side light transmission

[0073] 84 fourth guide strip side light transmission

[0074] 85 first guide strip outward light

[0075] 86 first LED strip outward light

[0076] 87 second guide strip outward light

[0077] 88 third guide strip outward light

[0078] 89 second LED strip outward light

[0079] 90 fourth guide strip outward light

[0080] 91 first LED strip

[0081] 92 second LED strip

[0082] L1 LED strip length

[0083] H1 LED strip height

[0084] W1 LED strip width

[0085] L2 transfer layer length

[0086] H2 Transfer Layer Height

[0087] W2 transfer layer width

[0088] L3 guide strip length

[0089] H3 guide belt height

[0090] W3 Guide Band Width

[0091] W4 Distance between the two guide strips Detailed Implementation

[0092] like Figure 1 As seen, the LED chip 20 can be made of LED strips 21. Each LED strip 21 has a lower LED strip surface 25 and an upper LED strip surface 26. The LED strip 21 has an LED strip body 29, which has a first LED strip side 27 and a second LED strip side 28. The LED strip 21 is formed on an LED substrate 22. The LED substrate 22 can be formed of sapphire, Si, SiC, GaN, and III-V materials. The lower LED strip surface 25 is formed on the LED substrate 22 and on the upper substrate surface 23. The LED strip provides a higher LED density in the direction perpendicular to the straight direction along the first length.

[0093] like Figure 2 As seen, a portion of the LED strip 21 has contacts, including a P contact 31 and an N contact 32 mounted on the upper side 35 of the LED segment. The contacts are formed on the upper side 35 of the LED segment. The LED segments 33 are separated from each other at LED segment separators 34. The first LED segment 36 intersects with the second LED segment 37 on the left and with the third LED segment 38 on the right. The LED segment separators 34 separate the first LED segment 36 from the third LED segment 38, and also separate the second LED segment 37 from the first LED segment 36.

[0094] The LED strip 21 has a first length LI and a first width Wl and a first height HI. The substrate 22 has a substrate upper surface 23 that holds the LED strip 21 until the substrate upper surface 23 is lifted from the LED strip 21. The LED strip 21, specifically the LED strip lower surface 25, is formed on the LED substrate 22 on the substrate upper surface 23. The LED strip second side 28 and the LED strip first side 27 are elongated. The contacts are formed along the sides, with the P contacts 31 formed along the LED strip second side 28 and the N contacts 32 formed along the LED strip first side 27. The LED segment dividers 34 can be formed as channels or insulators. The LED segment upper side 35 emits light. The first LED segment 36, the second LED segment 37, and the third LED segment 38 emit light. The first length LI is greater than the first width Wl, which is greater than the first height HI.

[0095] As seen in Figure 3 The first transfer layer 40 has a first transfer layer body 43 with a first transfer layer upper side 41 and a first transfer layer lower side 42. The first transfer layer lower side 42 is adhered to the LED segment upper side 35. The first transfer layer body 43 has a second width W2, a second length L2, and a second height H2. The first transfer layer 40 is pressed down on the LED strip 21 to grab the LED strip 21.

[0096] The LED strip 21 has an elongated LED substrate 22 with an elongated substrate upper surface 23. The LED strip second side 28 is also elongated. The first transfer layer 40 is also preferably elongated. The second length L2 of the first transfer layer body 43 is greater than the second width W2 of the first transfer layer body, which is greater than the second height H2 of the first transfer layer body.

[0097] As seen in Figure 4 The first transfer layer upper side 41 is opposite the first transfer layer lower side 42. The first transfer layer 40 can lift and disengage the LED strip 21 from the substrate upper surface 23 to form a first separation gap 44. The LED strip 21 is carried away from the LED substrate upper surface 23 and the LED substrate upper surface 23 can be reused to manufacture additional LED strips 21.

[0098] The LED strip 21 is released from the LED substrate 22 and the substrate upper surface 23. The LED strip second side 28 is also peeled away from the substrate upper surface 23. The first transfer layer 40, with the first transfer layer upper side 41 and the first transfer layer lower side 42, is also elongated. The first separation gap 44 increases as the LED strip is pulled away from the LED substrate 22. The LED substrate can be formed for a continuous process, such as mounting the LED substrate to a conveyor belt or placing the LED substrate on a conveyor belt.

[0099] As Figure 5 seen in FIG. 2, the first transfer layer 40 has a first transfer layer upper side 41 that can be connected to an external frame for lifting the first transfer layer 40. The LED strip upper surface 26 remains affixed to the first transfer layer 40 until the second transfer layer 45 is affixed to the LED strip 21 at the LED strip lower surface 25. The second transfer layer upper surface 46 is affixed to the LED strip lower surface 25 of the LED strip 21. The LED strip upper surface 26 is detached from the first transfer layer 40. The LED strip second side 28 is not affixed to the first transfer layer 40. The second transfer layer 45 can have an elongated second transfer layer upper surface 46 and can have an elongated second transfer layer bottom surface 47. The second transfer layer upper surface 46 is affixed to the LED strip lower surface 25. As Figure 6 seen in FIG. 3, when the LED strip 21 is peeled from the first transfer layer 40 after being more firmly affixed to the second transfer layer 45, the LED strip 21 has a second separation gap 48. The first transfer layer 40 and the second transfer layer are temporary affixes of the LED strip and can be configured in a continuous process, for example, formed into a wheel, or by implementation on a conveyor belt.

[0100] As Figure 7 seen in FIG. 4, the second transfer layer 45 then transfers the LED strip 21 to a flexible sheet 57. The flexible sheet 57 has electrodes 50 including positive electrodes 51 and negative electrodes 52 pre-formed on the strip. The positive electrodes are formed on the end of a positive electrode strip 53 and the negative electrodes are mounted on the end of a negative electrode strip 54. The LED strip will be activated when the positive contact pads 55 carry current through the positive electrodes 51 and negative electrodes 52 of the LED strip 21 to the negative contact pads 56. The flexible sheet 57 forms a display backplane 58 that can be mounted in an LED display.

[0101] As Figure 8 seen in FIG. 5, a guide strip 60 can include a first guide strip 61, a second guide strip 62, a third guide strip 63, and a fourth guide strip 64. The contact pads 56 extend from under the guide strip 60. The contact pads 56 are mounted on the display backplane 58. Each of the guide strips 60 has a third length L3 that is greater than the third height H3 and the third width W3.

[0102] As Figure 9 seen in FIG. 6, the LED strip 21 is inverted or flipped by a flip chip method. The LED strip upper surface 26 now faces down and is aligned with the first guide strip 61 and the second guide strip 62. The P contacts 31 are aligned with the positive contact pads 55 and the N contacts 32 are aligned with the negative contact pads 56. The second transfer layer 45 can be made of a material such as a plastic sheet, a metal film, a polymer film, etc., and can have elastic properties. The guide strip overlies the connection wires 55 formed on the flexible sheet upper surface 59 of the flexible sheet 57.

[0103] As Figure 10 seen in

[0104] As Figure 11 seen in

[0105] As Figure 12 seen, the LED strip 21 is removed from the second transfer layer 45 and lodged to the flexible sheet 57. The flexible sheet 57 and the second transfer layer 45 can be wrapped or curved by being connected to a bending device. When deformed, the LED strip is transferred to the flexible sheet 57. The first guide strip 61, the second guide strip 62, the third guide strip 63, the fourth guide strip 64, the fifth guide strip 65, the sixth guide strip 66 are translucent or transparent so that light from the LED strip 21 can be transmitted to the guide strips and accordingly the light is emitted outwardly. Thus, the light emission will extend from the LED strip 21 to two guide strips.

[0106] As Figure 13 seen, the LED strip 21, the first guide strip 61, the second guide strip 62, the third guide strip 63, the fourth guide strip 64 are all mounted to the flexible sheet 57.

[0107] As Figure 14 seen, the first LED strip 21 produces light that is transmitted laterally and outwardly. On the flexible sheet 57, the first guide strip 61 receives the first guide strip side light 81 into the first guide strip 61. The first guide strip 61 then produces the first guide strip outward light 85. The first LED strip 21 has the second guide strip 62 that receives the second guide strip light transmission 82 that is then directed outwardly as the second guide strip outward light 87.

[0108] Similarly, the second LED strip 21 is adjacent to a translucent or transparent third guide strip 63 and a fourth guide strip 64, such that the light transmission 80 produces a light emission. The second LED strip 21 provides a third guide strip side light transmission 83, which provides a third guide strip outward light 88. The second LED strip 21 provides a fourth guide strip side light transmission 84, which is then reflected or otherwise transmitted as a fourth guide strip outward light 90. The first LED strip 21 and the second LED strip 21 also have a first LED strip outward light 86 and a second LED strip outward light 89.

[0109] As Figure 15 As seen in FIG. 9, an LED strip can be composed of two identical LED strips 91 and 92 adjacent to each other. Such an arrangement is to increase the resolution of the display and to increase the footprint of the LED strip to make strip handling easier. LED strip 91 is mounted upside down so that its upper surface is adhered to the flexible sheet. LED strip 91 emits light from its bottom surface, which is away from the flexible sheet. The bottom surface of LED strip 91 is initially formed on a substrate. Thus, a flip chip method inverts the LED strip structure. The individual pixels of the LED strip can be separated by gaps or spacers, but are preferably connected to each other in a continuous manufacturing process.

[0110] Various monochromatic LEDs (e.g., red LEDs, green LEDs, blue LEDs, and ultraviolet LEDs) or multicolor LEDs (e.g., dual color LEDs or full color LEDs) can be formed into a strip. The present application can be used in conjunction with multicolor LED technology. For example, the combination of different color LED strips in one full color display is achievable.

[0111] The material of a monolithic light emitting device (M-LED) strip can be a series assembly of LED chips composed of GaN-based materials or GaAs-based materials grown and processed in monolithic form on a sapphire, Si, SiC, or GaAs substrate. The first width (W1) of the M-LED strip is in the range of 1 to 99,999 micrometers and the first length (L1) is in the range of 100 micrometers to 999 centimeters. The first height (H1) is in the range of 0.1 to 500 micrometers.

[0112] The transfer layer includes a first layer and a second layer (also referred to as a top layer and a bottom layer). The first and second layers can be made of materials such as elastic polymers, glass, metal, and plastic films. The second width (W2) is in the range of 100 to 999,999 microns and the second length (L2) is in the range of 10,000 microns to 9,999 centimeters. The second height (H2) is in the range of 1 to 50,000 microns. Finally, the distance W4 between the two guide strips should be slightly larger than the width of the LED strip and in the range of 1.05 to 99,999 microns.

[0113] The guide strips can be made of materials such as strips of deposited silicon dioxide, SiO2. The guide strips can also be made of elastomers (e.g., elastic polymers), glass, plastic films, etc. The third width (W3) of the guide strips is in the range of 0.5 to 99,999 microns. The third length (L3) is in the range of 100 microns to 999 centimeters. The third height (H3) is in the range of 0.1 to 500 microns. In some applications, the guide strips (e.g., guide strips 60 described above) can be made of non-transparent materials to achieve the effect of blocking the lateral area diffusion of light.

[0114] The display backplane can be made of materials such as plastic substrates, glass films or plates, thin metal foils, polymeric materials, etc. Key features of the present invention are:

[0115] 1. A monolithic light emitting device (M-LED) strip has a series of LED chips that are processed from the same semiconductor material in a regular pattern and preferably have a uniform configuration.

[0116] 2. The M-LED strip can be used as a series of pixels compared to the common practice of using individual LEDs as individual pixels.

[0117] 3. The LED chips can be single color LEDs (e.g., red LEDs, yellow LEDs, green LEDs, blue LEDs, ultraviolet LEDs, etc.) as well as dual color LEDs or multi-color LEDs.

[0118] 4. One M-LED strip can also contain two or more series of LED chips adjacent to each other as seen in Figure 15

[0119] 5. Although the same material is used in the same M-LED strip, different M-LED strips can be made of different materials. A combination of different types of M-LED strips in the same display panel can be achieved.

[0120] ​6. The first width (Wl) of the M-LED strip is in the range of 1 to 99,999 microns, the first length (LI) is in the range of 100 microns to 999 centimeters and the height (HI) is in the range of 0.1 to 500 microns.

[0121] 7. Two transfer layers (top and bottom) are used to carry the tiny M-LED strip during the process. Therefore, the two transfer layers should be large enough to cover the entire M-LED strip and easy to handle.

[0122] 8. The second width (W2) of the transfer layer is in the range of 100 to 999,999 microns, the second length (L2) is in the range of 10,000 microns to 9,999 centimeters and the second height (H2) is in the range of 1 to 50,000 microns.

[0123] 9. A flexible sheet made of materials such as plastic substrate, glass film or plate, thin metal foil, polymer material, etc. and pre-deposited contacts (p-type and n-type) and connecting wires can be used as a backplane of a display as seen in Figure 7 .

[0124] 10. Guiding strips can be placed on the display backplane which is pre-deposited with metal contact pads and connections as shown in Figure 7 .

[0125] 11. The distance (W) between two adjacent guiding strips will be slightly larger than the first width (Wl) of the M-LED strip (e.g. in the range of 1.2 to 100,000 microns) as seen in Figure 8 .

[0126] 12. Guiding strips which can be made of materials such as SiO2deposited strips, elastomers, glass, plastic, polymer materials, etc. can be used as guiding rails for easy alignment of the M-LED strip during the process.

[0127] 13. Light guiding strips can also be used as light waveguides to expand the light emission from the M-LED strip as seen in Figure 14 .

[0128] 14. Although enough pixels are placed in one row, some of the pixels can not be needed to be lit up during operation. However, if needed, the pixels can be used to provide redundant pixels to replace failed pixels. This is because the LED density along the linear direction of the strip is larger than the LED density of the LED strip in the lateral direction.

Claims

1. A method of assembling a light emitting device wafer structure, comprising: comprising the steps of: a. forming a light emitting device strip on a substrate, wherein the light emitting device strip has a P contact and an N contact mounted on the light emitting device strip, wherein the light emitting device strip has a first length, a first width, and a first height, wherein the first length is greater than the first width, and the first width is greater than the first height; b. applying a first transfer layer on an upper surface of the light emitting device strip; c. separating the light emitting device strip from the substrate; d. applying a second transfer layer to a lower surface of the light emitting device strip; e. separating the light emitting device strip from the first transfer layer; f. preparing a display backplane having a positive electrode, a negative electrode, a positive contact pad, a negative contact pad, a positive connecting wire connecting the positive electrode to the positive contact pad, and a negative connecting wire connecting the negative electrode to the negative contact pad; g. mounting a pair of guide strips, a first guide strip and a second guide strip, to the display backplane, wherein the display backplane is flexible; h. mounting the light emitting device strip between the pair of guide strips; and i. detaching the light emitting device strip from the second transfer layer.

2. The method of assembling a light emitting device wafer structure of claim 1, wherein, further comprising the steps of: mounting a third guide strip and a fourth guide strip to the display backplane.

3. The method of assembling a light emitting device wafer structure of claim 2, wherein, further comprising the steps of: mounting a second light emitting device strip between the third guide strip and the fourth guide strip.

4. The method of assembling a light emitting device wafer structure of claim 3, wherein, further comprising the steps of: providing the first guide strip, the second guide strip, the third guide strip, and the fourth guide strip with a translucent material.

5. The method of assembling a light emitting device wafer structure of claim 3, wherein, further comprising the steps of: providing the first guide strip, the second guide strip, the third guide strip, and the fourth guide strip with a transparent material.

6. The method of claim 1, wherein further comprising the steps of: forming the N contact along a first side of the light emitting device strip, and forming the P contact along a second side of the light emitting device strip.

7. The method of assembling a light emitting device wafer structure of claim 2, wherein, further comprising the steps of: aligning the P contact with the positive electrode and the N contact with the negative electrode by engaging an inner surface of the guide strips to the first side and the second side of the light emitting device strip.

8. The method of assembling a light emitting device wafer structure of claim 7, wherein, further comprising the steps of: mounting a second light emitting device strip between the third guide strip and the fourth guide strip.

9. The method of assembling a light emitting device wafer structure of claim 8, wherein, further comprising the steps of: providing the first guide strip, the second guide strip, the third guide strip, and the fourth guide strip with a translucent material.

10. The method of assembling a light emitting device wafer structure of claim 8, wherein, further comprising the steps of: providing the first guide strip, the second guide strip, the third guide strip, and the fourth guide strip with a transparent material.

11. The method of assembling a light emitting device wafer structure of claim 1, wherein, the light emitting device strip is a monolithic light emitting device strip that is not a discrete light emitting device chip.

12. The method of assembling a light emitting device wafer structure of claim 11, wherein, the monolithic light emitting device strip is selected from the group consisting of a monochromatic red light emitting device, a green light emitting device, a blue light emitting device, an ultraviolet light emitting device, or a polychromatic light emitting device.

13. The method of assembling a light emitting device wafer structure of claim 12, wherein, further comprising the steps of: transferring the monolithic light emitting device strip to the display backplane in a parallel configuration to form a full color display.

14. A light emitting device wafer structure, comprising: comprising: a. a light emitting device strip having a plurality of light emitting device chips formed as a strip, wherein the light emitting device strip is a monolithic light emitting device strip having a plurality of independently controllable light emitting devices; b. a display backplane having positive electrodes, negative electrodes, positive contact pads, negative contact pads; c. positive connection wires formed on the display backplane and connecting the positive electrodes to the positive contact pads, and negative connection wires connecting the negative electrodes to the negative contact pads; d. mounting a pair of guide strips, a first guide strip and a second guide strip, to the display backplane, wherein the display backplane is flexible, wherein the light emitting device strip is mounted between the pair of guide strips.

15. The light emitting device wafer structure of claim 14, wherein, The light emitting device strip is a single color red light emitting device, a green light emitting device, a blue light emitting device, an ultraviolet light emitting device, or a multi-color light emitting device.

16. The light emitting device wafer structure of claim 14, wherein, The light emitting device strip is mounted on the display backplane in a parallel configuration of a plurality of adjacent light emitting device strips to form a full color display, wherein the plurality of adjacent light emitting device strips are aligned parallel to each other.

17. The light emitting device wafer structure of claim 14, wherein, The material of the pair of guide strips comprises an opaque material.

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