A radio frequency power amplifier

Abstract

The present invention provides a radio frequency power amplifier, including a power amplification module and a conversion module, wherein the power amplification module includes a first port, a first transistor, and a second port, and is used to amplify the power of a received radio frequency signal; when the radio frequency power amplifier is in a signal transmission state, the conversion module is used to control the first transistor to work in a common source state, so that the first port is the input end of the radio frequency signal, and the second port is the output end of the radio frequency signal; when the radio frequency power amplifier is in a signal reception state, the conversion module is used to control the first transistor to work in a common gate state, so that the second port is the input end of the radio frequency signal, and the first port is the output end of the radio frequency signal. The radio frequency power amplifier provided in the embodiment of the present invention only requires one radio frequency power amplifier for the transmission link and the receiving link, which, on the one hand, avoids the problem of superposition of thermal effects caused by the existing two-way radio frequency amplifier, and on the other hand, is conducive to meeting the needs of system miniaturization.

Description

Technical Field

[0001] The present invention relates to the field of wireless communication technology, and in particular to a radio frequency power amplifier. Background Art

[0002] RF power amplifiers are core components of modern communication systems and are widely used in radar, satellite communications and electronic countermeasures. RF power amplifier chips can amplify RF signals of specific frequency and bandwidth to achieve high power output.

[0003] However, in RF microsystem applications, the system's transmit link and receive link each require a power amplifier, which has the following disadvantages: on the one hand, the combined thermal effects of the transmit link and receive link RF amplifiers affect the system reliability; on the other hand, both the transmit link and receive link RF amplifiers require space for placement, which cannot meet the needs of system miniaturization. Summary of the invention

[0004] The embodiment of the present invention provides a radio frequency power amplifier to solve the problem of thermal effect superposition caused by the fact that a transmitting link and a receiving link of an existing radio frequency system each require a radio frequency power amplifier.

[0005] In a first aspect, an embodiment of the present invention provides a radio frequency power amplifier, comprising a power amplification module and a conversion module, wherein the power amplification module comprises a first port, a first transistor, and a second port, wherein the conversion module is connected to a gate of the first transistor, is also connected to a source of the first transistor, and is also connected to the first port;

[0006] The power amplification module is used to amplify the power of the received radio frequency signal;

[0007] When the RF power amplifier is in a signal transmission state, the conversion module is used to control the first transistor to work in a common source state, so that the first port is an input end of the RF signal and the second port is an output end of the RF signal;

[0008] When the RF power amplifier is in a signal receiving state, the conversion module is used to control the first transistor to be in common gate operation, so that the second port is the input end of the RF signal and the first port is the output end of the RF signal.

[0009] In a possible implementation, the conversion module includes a first switch unit, a second switch unit, a third switch unit, and a fourth switch unit;

[0010] The first switch unit is connected to the first port and is also connected to the gate of the first transistor, the second switch unit is connected to the source of the first transistor and is also connected to the ground terminal, the third switch unit is connected to the first port and is also connected to the source of the first transistor, and the fourth switch unit is connected to the gate of the first transistor and is also connected to the ground terminal;

[0011] When the RF power amplifier is in a signal transmission state, the conversion module is used to control the first switch unit and the second switch unit to be in an on state, and control the third switch unit and the fourth switch unit to be in an off state, so that the first port and the gate of the first transistor are in a connected state, and the first port and the source of the first transistor are in a disconnected state, and the source of the first transistor is grounded;

[0012] When the RF power amplifier is in a signal receiving state, the conversion module is used to control the first switch unit and the second switch unit to be in a disconnected state, and control the third switch unit and the fourth switch unit to be in a conductive state, so that the first port and the source of the first transistor are in a connected state, and the first port and the gate of the first transistor are in a disconnected state, and the gate of the first transistor is grounded.

[0013] In a possible implementation, the first switch unit includes a second transistor and a third port;

[0014] A gate of the second transistor is connected to the third port, a drain of the second transistor is connected to the first port, and a source of the second transistor is connected to the gate of the first transistor.

[0015] In a possible implementation manner, the second switch unit includes a third transistor and a fourth port;

[0016] A gate of the third transistor is connected to the fourth port, a drain of the third transistor is connected to a source of the first transistor, and a source of the third transistor is grounded.

[0017] In a possible implementation manner, the third switch unit includes a fourth transistor and a fifth port;

[0018] A gate of the fourth transistor is connected to the fifth port, a drain of the fourth transistor is connected to the first port, and a source of the fourth transistor is connected to the gate of the first transistor.

[0019] In a possible implementation manner, the fourth switch unit includes a fifth transistor and a sixth port;

[0020] A gate of the fifth transistor is connected to the sixth port, a drain of the fifth transistor is connected to the gate of the first transistor, and a source of the fifth transistor is grounded.

[0021] In a possible implementation manner, the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor are transistors of the same type.

[0022] In a possible implementation manner, the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are depletion-mode transistors.

[0023] In a possible implementation manner, a 0V voltage is applied through the third port and the fourth port respectively, so that the first switch unit and the second switch unit are in a conducting state;

[0024] A voltage of a preset voltage value is applied through the fifth port and the sixth port respectively, so that the third switch unit and the fourth switch unit are in a disconnected state, wherein the preset value is less than or equal to a preset threshold value.

[0025] In a possible implementation, a voltage of a preset voltage value is applied through the third port and the fourth port respectively, so that the first switch unit and the second switch unit are in an off state, wherein the preset value is less than or equal to a preset threshold value;

[0026] A voltage of 0V is applied through the fifth port and the sixth port respectively, so that the third switch unit and the fourth switch unit are in a conducting state.

[0027] The embodiment of the present invention provides a radio frequency power amplifier, which adds a conversion module on the basis of an existing power amplifier. When the radio frequency power amplifier is in a signal transmission state, the conversion module controls the transistor of the amplifier to work in a common source state, so that the first port is the input end of the radio frequency signal and the second port is the output end of the radio frequency signal; when the radio frequency power amplifier is in a signal reception state, the conversion module controls the first transistor to work in a common gate state, so that the second port is the input end of the radio frequency signal and the first port is the output end of the radio frequency signal. The radio frequency power amplifier provided by the embodiment of the present invention only needs one radio frequency power amplifier for the transmission link and the receiving link, which avoids the problem of superposition of thermal effects caused by the existing two-way radio frequency amplifier on the one hand, and is conducive to meeting the needs of system miniaturization on the other hand. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0029] Figure 1 It is a structural schematic diagram of a radio frequency power amplifier in the prior art;

[0030] Figure 2 is a structural schematic diagram of a radio frequency power amplifier provided by an embodiment of the present invention;

[0031] Figure 3 It is a schematic diagram of the working mode of the power amplification module when the radio frequency power amplifier provided by an embodiment of the present invention is in a signal transmission state;

[0032] Figure 4 It is a schematic diagram of the working mode of the power amplification module when the radio frequency power amplifier provided by the embodiment of the present invention is in a signal receiving state;

[0033] Figure 5 is a schematic structural diagram of another radio frequency power amplifier provided by an embodiment of the present invention;

[0034] Figure 6 It is a circuit structure diagram of a radio frequency power amplifier provided by an embodiment of the present invention;

[0035] Figure 7 It is a schematic diagram of the circuit structure of an existing power amplifier;

[0036] Figure 8 It is a circuit structure diagram of another radio frequency power amplifier provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0037] In order to enable people in the technical field to better understand the present solution, the technical solution in the embodiment of the present solution will be clearly described below in conjunction with the drawings in the embodiment of the present solution. Obviously, the described embodiment is an embodiment of a part of the present solution, not all of the embodiments. Based on the embodiments in the present solution, all other embodiments obtained by ordinary technicians in the field without creative work should fall within the scope of protection of the present solution.

[0038] The term "including" and any other variations in the specification and claims of this solution and the above drawings mean "including but not limited to", and is intended to cover non-exclusive inclusions and is not limited to the examples listed in the text. In addition, the terms "first" and "second" are used to distinguish different objects, not to describe a specific order.

[0039] The following is a detailed description of the implementation of the present invention in conjunction with the specific drawings:

[0040] Figure 1 A schematic diagram of the structure of a radio frequency power amplifier provided by an embodiment of the present invention. Figure 1 The RF power amplifier includes an input port, an active device, and two matching circuits on the input and output sides of the active device. The input port and output port of the existing RF power amplifier are fixed, and the RF signal is input from the input port and output from the output port after amplification. Based on the structure of the existing RF amplifier, an RF amplifier is required for each of the transmitting link and receiving link of the RF system. On the one hand, the thermal effects of the two amplifiers are superimposed, affecting the stability of the RF system. On the other hand, the two RF amplifiers occupy a large space and cannot meet the requirements of system miniaturization.

[0041] In order to solve the above problems, the present invention provides a radio frequency power amplifier. Figure 2 A schematic diagram of a radio frequency power amplifier according to an embodiment of the present invention is provided. Figure 2 The radio frequency power amplifier provided in the embodiment of the present invention includes: a power amplification module 100 and a conversion module 200, the power amplification module 100 includes a first port 110, a first transistor 120 and a second port 130, the conversion module 200 is connected to the gate of the first transistor 120, is also connected to the source of the first transistor 120, and is also connected to the first port 110;

[0042] The power amplifier module 100 is used to amplify the power of the received radio frequency signal;

[0043] When the RF power amplifier is in a signal transmission state, the conversion module 200 is used to control the first transistor 120 to work in a common source state, so that the first port 110 is an input end of the RF signal and the second port 130 is an output end of the RF signal;

[0044] When the RF power amplifier is in a signal receiving state, the conversion module 200 is used to control the first transistor 120 to be in common gate operation, so that the second port 130 is the input end of the RF signal and the first port 110 is the output end of the RF signal.

[0045] Figure 3 is a schematic diagram of the working mode of the power amplification module when the RF power amplifier provided by the embodiment of the present invention is in a signal transmission state, such as Figure 3 As shown, when the RF power amplifier is in a signal transmission state, the first transistor is in a common source operation.

[0046] Figure 4is a schematic diagram of the working mode of the power amplification module when the radio frequency power amplifier provided by the present invention is in a signal receiving state, combined with Figure 4 , the first transistor is in common gate operation.

[0047] It should be noted that in the amplifier, there is usually a matching circuit between the input and output ports and the active devices. Figure 3 and Figure 4 The matching circuit is shown by way of example only, and the matching circuit is not a limitation on the power amplifier module 100 according to the embodiment of the present invention. In addition, the embodiment of the present invention does not limit the specific structure of the matching circuit.

[0048] When the power amplifier module 100 includes a matching circuit, the connection relationship between the conversion module 200 and the power amplifier module 100 is as follows: Figure 5 As shown, a matching circuit is included between the first port 110 and the conversion module 200 , that is, the conversion module 200 is connected to the first port 110 through the matching circuit.

[0049] The embodiment of the present invention provides a radio frequency power amplifier, which adds a conversion module on the basis of an existing power amplifier. When the radio frequency power amplifier is in a signal transmission state, the conversion module controls the transistor of the amplifier to work in a common source state, so that the first port is the input end of the radio frequency signal and the second port is the output end of the radio frequency signal; when the radio frequency power amplifier is in a signal reception state, the conversion module controls the first transistor to work in a common gate state, so that the second port is the input end of the radio frequency signal and the first port is the output end of the radio frequency signal. The radio frequency power amplifier provided by the embodiment of the present invention only needs one radio frequency power amplifier for the transmission link and the receiving link, which avoids the problem of superposition of thermal effects caused by the existing two-way radio frequency amplifier on the one hand, and is conducive to meeting the needs of system miniaturization on the other hand.

[0050] In one possible implementation, Figure 6 is a schematic diagram of a circuit structure of a radio frequency power amplifier provided by an embodiment of the present invention, combined with Figure 6 , the conversion module 200 includes a first switch unit 210, a second switch unit 220, a third switch unit 230 and a fourth switch unit 240;

[0051] The first switch unit 210 is connected to the first port and is also connected to the gate of the first transistor 120. The second switch unit 220 is connected to the source of the first transistor 120 and is also connected to the ground. The third switch unit 230 is connected to the first port and is also connected to the source of the first transistor 120. The fourth switch unit 240 is connected to the gate of the first transistor 120 and is also connected to the ground.

[0052] When the RF power amplifier is in a signal transmission state, the conversion module 200 is used to control the first switch unit 210 and the second switch unit 220 to be in an on state, and control the third switch unit 230 and the fourth switch unit 240 to be in an off state, so that the first port 110 and the gate of the first transistor 120 are in a connected state, and the first port 110 and the source of the first transistor 120 are in a disconnected state, and the source of the first transistor 110 is grounded; at this time, the working mode of the first transistor 120 in the power amplifier module 100 is as follows: Figure 3 shown.

[0053] When the RF power amplifier is in a signal receiving state, the conversion module 200 is used to control the first switch unit 210 and the second switch unit 220 to be in an off state, and control the third switch unit 230 and the fourth switch unit 240 to be in an on state, so that the first port 110 and the source of the first transistor 120 are in a connected state, and the first port 110 and the gate of the first transistor 120 are in a disconnected state, and the gate of the first transistor 120 is grounded. At this time, the working mode of the first transistor 120 in the power amplifier module 100 is as follows: Figure 4 shown.

[0054] In one possible implementation, combining Figure 6 , the first switch unit 210 includes a second transistor HEMT2 and a third port P3;

[0055] A gate of the second transistor HEMT2 is connected to the third port P3 , a drain of the second transistor HEMT2 is connected to the first port P1 , and a source of the second transistor HEMT1 is connected to the gate of the first transistor HEMT1 .

[0056] In one possible implementation, combining Figure 6 , the second switch unit 220 includes a third transistor HEMT3 and a fourth port P4;

[0057] A gate of the third transistor HEMT3 is connected to the fourth port P4 , a drain of the third transistor HEMT3 is connected to the source of the first transistor HEMT1 , and a source of the third transistor HEMT3 is grounded.

[0058] In a possible implementation, the third switch unit 230 includes a fourth transistor HEMT4 and a fifth port P5;

[0059] A gate of the fourth transistor HEMT4 is connected to the fifth port P5 , a drain of the fourth transistor HEMT4 is connected to the first port P1 , and a source of the fourth transistor HEMT4 is connected to the gate of the first transistor HEMT1 .

[0060] In a possible implementation, the fourth switch unit 240 includes a fifth transistor HEMT5 and a sixth port P6;

[0061] A gate of the fifth transistor HEMT5 is connected to the sixth port P6 , a drain of the fifth transistor HEMT5 is connected to the gate of the first transistor HEMT1 , and a source of the fifth transistor HEMT5 is grounded.

[0062] In a possible implementation, the first transistor HEMT1, the second transistor HEMT2, the third transistor HEMT3, the fourth transistor HEMT4 and the fifth transistor HEMT5 are transistors of the same type.

[0063] In a possible implementation, the first transistor HEMT1, the second transistor HEMT2, the third transistor HEMT3, the fourth transistor HEMT4 and the fifth transistor HEMT5 are depletion-mode transistors, for example, commonly used depletion-mode AlGaN / GaN HEMTs.

[0064] In a possible implementation, 0V voltage is applied through the third port P3 and the fourth port P4 respectively, so that the first switch unit 210 and the second switch unit 220 are in the on state; a voltage of a preset voltage value is applied through the fifth port P5 and the sixth port P6 respectively, so that the third switch unit 230 and the fourth switch unit 240 are in the off state, wherein the preset value is less than or equal to the preset threshold. At this time, the first transistor HEMT1 is in common source operation, such as Figure 3 shown.

[0065] In a possible implementation, a voltage of a preset voltage value is applied through the third port P3 and the fourth port P4 respectively, so that the first switch unit 210 and the second switch unit 220 are in a disconnected state, wherein the preset value is less than or equal to a preset threshold value; and a voltage of 0V is applied through the fifth port P5 and the sixth port P6 respectively, so that the third switch unit 230 and the fourth switch unit 240 are in a conductive state. At this time, the first transistor HEMT1 is in common gate operation.

[0066] When the voltage of the third port P3 and the fourth port P4 is added with 0V, and the voltage of the fifth port P5 and the sixth port P6 is added with a voltage of a preset voltage value, the channels of the second transistor HEMT2 and the third transistor HEMT3 are turned on, and the channels of the fourth transistor HEMT4 and the fifth transistor HEMT5 are pinched off. At this time, the first transistor HEMT1 works with a common source, and the RF power amplifier can be used in the RF signal transmission state.

[0067] When the voltage of the fifth port P5 and the sixth port P6 is added with 0V, and the voltage of the third port P3 and the fourth port P4 is added with a voltage of a preset voltage value, the channels of the second transistor HEMT2 and the third transistor HEMT3 are cut off, and the channels of the fourth transistor HEMT4 and the fifth transistor HEMT5 are turned on. At this time, the first transistor HEMT1 works with a common gate, and the RF power amplifier can be used in the RF signal receiving state.

[0068] Figure 7 FIG. 1 is a schematic diagram of a circuit structure of a radio frequency power amplifier in the prior art. In the radio frequency power amplifier provided in the embodiment of the present invention, the circuit structure in the power amplification module 100 can be as follows: Figure 7 As shown, it may also be the circuit structure of other existing power amplifiers, and the implementation of the present invention is not limited to this.

[0069] Combination Figure 7 The power amplification module 100 includes a first port 110 , an input bias unit 140 , an input matching unit 150 , a first transistor 120 , an output matching unit 160 , an output bias unit 170 and a second port 130 .

[0070] The input bias unit 140 includes an inductor L1, a capacitor C1, a resistor R1, a microstrip line TL1 and a port P7. The connection relationship of each electronic component is as follows: Figure 7 In the above, port P7 is a gate voltage bias port.

[0071] The input matching unit 150 and the output matching unit 160 are both composed of a matching circuit of a Π-type topology. It should be noted that the input matching unit 150 and the output matching unit 160 in the power amplifier module 100 can also be composed of matching circuits of other topological structures, which is not limited in the implementation of the present invention. The matching circuit of the input matching unit 150 and the matching circuit of the output matching unit 160 are circuits for matching between the first transistor 120 and the first port P1 and the second port P2.

[0072] The input matching unit 150 includes a microstrip line TL2, a microstrip line TL3, an inductor L2, a capacitor C2 and a microstrip line TL4, wherein the connection relationship of each electronic device is as follows: Figure 7 shown.

[0073] The output matching unit 160 includes a microstrip line TL5, a capacitor C3, an inductor L3, a microstrip line TL6 and a microstrip line TL7, wherein the connection relationship of each electronic device is as follows: Figure 7 shown.

[0074] The output bias unit 160 includes an inductor L4, a capacitor C4, a resistor R2, a microstrip line TL8 and an output port P4, wherein P8 is a leakage bias port.

[0075] When the circuit structure of the power amplifier module 100 is as follows Figure 7 As shown, the circuit structure diagram of the radio frequency power amplifier provided by the present invention is as follows Figure 8 As shown, Figure 8 The circuit structure shown is Figure 6 The circuit structure shown and Figure 7 The combination of the circuit structures shown is not described in detail in the embodiments of the present invention.

[0076] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A radio frequency power amplifier, It is characterized in that It includes a power amplification module and a conversion module, wherein the power amplification module includes a first port, a first transistor, and a second port, and the conversion module is connected to the gate of the first transistor, is also connected to the source of the first transistor, and is also connected to the first port; The power amplification module is used to amplify the power of the received radio frequency signal; When the RF power amplifier is in a signal transmission state, the conversion module is used to control the first transistor to work in a common source state, so that the first port is an input end of the RF signal and the second port is an output end of the RF signal; When the RF power amplifier is in a signal receiving state, the conversion module is used to control the first transistor to be in common gate operation, so that the second port is the input end of the RF signal and the first port is the output end of the RF signal.

2. The radio frequency power amplifier according to claim 1, It is characterized in that The conversion module includes a first switch unit, a second switch unit, a third switch unit and a fourth switch unit; The first switch unit is connected to the first port and is also connected to the gate of the first transistor, the second switch unit is connected to the source of the first transistor and is also connected to the ground terminal, the third switch unit is connected to the first port and is also connected to the source of the first transistor, and the fourth switch unit is connected to the gate of the first transistor and is also connected to the ground terminal; When the RF power amplifier is in a signal transmission state, the conversion module is used to control the first switch unit and the second switch unit to be in an on state, and control the third switch unit and the fourth switch unit to be in an off state, so that the first port and the gate of the first transistor are in a connected state, and the first port and the source of the first transistor are in a disconnected state, and the source of the first transistor is grounded; When the RF power amplifier is in a signal receiving state, the conversion module is used to control the first switch unit and the second switch unit to be in a disconnected state, and control the third switch unit and the fourth switch unit to be in a conductive state, so that the first port and the source of the first transistor are in a connected state, and the first port and the gate of the first transistor are in a disconnected state, and the gate of the first transistor is grounded.

3. The radio frequency power amplifier according to claim 2, It is characterized in that The first switch unit includes a second transistor and a third port; A gate of the second transistor is connected to the third port, a drain of the second transistor is connected to the first port, and a source of the second transistor is connected to the gate of the first transistor.

4. The radio frequency power amplifier according to claim 3, It is characterized in that The second switch unit includes a third transistor and a fourth port; A gate of the third transistor is connected to the fourth port, a drain of the third transistor is connected to a source of the first transistor, and a source of the third transistor is grounded.

5. The radio frequency power amplifier according to claim 4, It is characterized in that The third switch unit includes a fourth transistor and a fifth port; A gate of the fourth transistor is connected to the fifth port, a drain of the fourth transistor is connected to the first port, and a source of the fourth transistor is connected to the gate of the first transistor.

6. The radio frequency power amplifier according to claim 5, It is characterized in that The fourth switch unit includes a fifth transistor and a sixth port; A gate of the fifth transistor is connected to the sixth port, a drain of the fifth transistor is connected to the gate of the first transistor, and a source of the fifth transistor is grounded.

7. The radio frequency power amplifier according to claim 6, It is characterized in that The first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor are transistors of the same type.

8. The radio frequency power amplifier according to claim 7, It is characterized in that The first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor are depletion-mode transistors.

9. The radio frequency power amplifier according to claim 8, It is characterized in that Applying 0V voltage through the third port and the fourth port respectively, so that the first switch unit and the second switch unit are in a conducting state; A voltage of a preset voltage value is applied through the fifth port and the sixth port respectively, so that the third switch unit and the fourth switch unit are in a disconnected state, wherein the preset value is less than or equal to a preset threshold value.

10. The radio frequency power amplifier according to claim 8, It is characterized in that Applying a voltage of a preset voltage value through the third port and the fourth port respectively, so that the first switch unit and the second switch unit are in an off state, wherein the preset value is less than or equal to a preset threshold; A voltage of 0V is applied through the fifth port and the sixth port respectively, so that the third switch unit and the fourth switch unit are in a conducting state.

Images