Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Abstract

A semiconductor manufacturing apparatus and a method of manufacturing a semiconductor device are disclosed. In one aspect, the apparatus includes a support to place a substrate and a radiation source to provide radiation to transfer a pattern onto the substrate. The apparatus also includes a plurality of sensing devices to provide a reference signal based on an intensity of the radiation in an absence of the substrate. The apparatus further includes a controller operably coupled to the sensing devices to adjust the intensity of the radiation based on the reference signal.

Description

Technical Field

[0001] This disclosure relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device. Background Technology

[0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advancements in IC materials and design have resulted in several generations of ICs, each with smaller and more complex circuits than the previous generation. As devices become smaller, one aspect requiring continuous improvement is the manufacturing process related to photolithography. Typically, a wafer is exposed to a radiation source to form a pattern. The material on the wafer is then etched away or deposited to form layers. These layers are then combined and connected to form electronic devices and circuits. However, as devices become smaller, manufacturing devices with uniformity becomes increasingly difficult. Summary of the Invention

[0003] This disclosure includes a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes: a support for holding a substrate; a radiation source for providing radiation to transfer a pattern onto the substrate; a plurality of sensing devices for providing a reference signal based on the intensity of the radiation in the absence of a substrate; and a controller operatively coupled to the sensing devices for adjusting the intensity of the radiation based on the reference signal.

[0004] This disclosure includes a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes: a support for holding a substrate; a radiation receiving device for absorbing radiation received on a top surface of the support; and a circuit electrically coupled to the radiation receiving device for generating a reference signal based on the intensity of the absorbed radiation. The reference signal may be substantially proportional to the intensity, thereby allowing the intensity to be adjusted accordingly.

[0005] This disclosure includes a method for manufacturing a plurality of semiconductor devices. The method includes unloading the first substrate from the support after exposing it with a radiation source. The method also includes exposing the support with the radiation source to generate a reference signal, and determining the level of the reference signal, the level being substantially proportional to the intensity of the radiation source. The method further includes adjusting the intensity of the radiation source in response to the determination that the level of the reference signal does not meet a predefined condition before loading a second substrate. Attached Figure Description

[0006] The nature of this disclosure is best understood when read in conjunction with the accompanying drawings in the following detailed description. It should be noted that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various features may be arbitrarily increased or decreased.

[0007] Figure 1A and Figure 1B A diagram illustrating a semiconductor manufacturing apparatus according to an embodiment;

[0008] Figure 2A A top view illustrating a sensing device of a semiconductor manufacturing apparatus according to an embodiment;

[0009] Figure 2B Example according to the embodiment Figure 2A A schematic circuit diagram of a sensing device;

[0010] Figure 3A A schematic circuit diagram illustrating a sensing device according to an embodiment is shown;

[0011] Figure 3B Example according to the embodiment Figure 3A Voltage waveform at the output of the sensing device;

[0012] Figure 4A A schematic circuit diagram illustrating a sensing device according to an embodiment is shown;

[0013] Figure 4B Example according to the embodiment Figure 4A Voltage waveform at the output of the sensing device;

[0014] Figure 5A A schematic circuit diagram illustrating a sensing device according to an embodiment is shown;

[0015] Figure 5B Example according to the embodiment Figure 5A Voltage waveforms at different nodes of the sensing device;

[0016] Figure 5C Example according to the embodiment Figure 5A The frequency waveform of the output signal at the output terminal of the sensing device;

[0017] Figure 6A A schematic circuit diagram illustrating a sensing device according to an embodiment is shown;

[0018] Figure 6B Example according to the embodiment Figure 6A Voltage waveform at the output of the sensing device;

[0019] Figure 6C Example according to the embodiment Figure 6A The output frequency waveform at the output terminal of the sensing device;

[0020] Figure 7 A flowchart illustrating an exemplary method of using a semiconductor manufacturing apparatus according to an embodiment.

[0021] [Symbol Explanation]

[0022] 100A, 100B: Semiconductor manufacturing equipment

[0023] 102: Chamber

[0024] 104: Chuck

[0025] 106: Axis

[0026] 108: Radiation source

[0027] 110: Wire

[0028] 112: Controller

[0029] 200: Sensing device

[0030] 202, 204, 206, 208: Energy Sensing Pads (ESP)

[0031] 212, 214, 216, 218: Circuits

[0032] 222, 224, 226, 228: Output nodes, output terminals

[0033] 230, 240: Peripheral decoders

[0034] 300: Sensing device

[0035] 302, 304, 306: Transistors

[0036] 308: Energy Sensing Pad (ESP)

[0037] 312, 314: lines

[0038] 316: Reset Line

[0039] 400: Sensing device

[0040] 402, 404, 406: Transistors

[0041] 408: Energy Sensing Pad (ESP)

[0042] 412, 414: Lines

[0043] 416: Reset Line

[0044] 500: Sensing device

[0045] 502: Diode

[0046] 504: Inverter

[0047] 506, 508: Transistors

[0048] 510, 512: Capacitors

[0049] 520: Wireless Transmitter

[0050] 522: Energy Cushion (EP)

[0051] 524, 526: Energy Sensing Pad (ESP)

[0052] 530, 532, 534: Lines

[0053] 600: Sensing device

[0054] 602: Transistor

[0055] 604A, 604B, 604C: Inverters

[0056] 608: Wireless Transmitter

[0057] 610: Energy Sensing Pad (ESP)

[0058] 612: Ring Oscillator

[0059] 700: Method

[0060] 702, 704, 706, 708: Operation Detailed Implementation

[0061] The following disclosure provides numerous different embodiments or examples for implementing various features of the provided subject matter. Specific examples of components and configurations are described below to simplify this disclosure. Of course, these components and configurations are merely examples and are not intended to be limiting. For example, in the following description, forming a first feature on or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which an additional feature may be formed between the first and second features such that the first and second features are not in direct contact. Additionally, reference numerals and / or letters may be repeated in various instances of this disclosure. This repetition is for simplicity and clarity and does not in itself determine the relationship between the various embodiments and / or configurations discussed.

[0062] Additionally, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” “upper,” “top,” “bottom,” and similar terms may be used herein to describe the relationship between one element or feature illustrated in the figures and one or more other elements or features. Besides the orientation depicted in the figures, spatial relative terms are intended to cover different orientations of elements in use or operation. Devices may be oriented in other ways (rotated 90 degrees or otherwise), and the spatial relative descriptors used herein will be interpreted accordingly.

[0063] As electronic devices become smaller, achieving device uniformity across the wafer becomes increasingly difficult. A crucial aspect of manufacturing uniform devices is the radiation source used for photolithography. Because the radiation source is typically kept on to maximize consistency, uniformity, and throughput, it is essential that the radiation source be reliable at all times. One way to measure whether the radiation source exposes the wafer to uniform light or electrons across the entire wafer is using a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) approach. Typically, for a CMOS image sensor, a photodetector is connected to a set of CMOS transistors. The photodetector senses the light that forces an output voltage up, allowing the transistors to detect the amount of light incident on the photodetector. However, this method has several drawbacks. First, it is incompatible with the latest CMOS processes, such as 3D transistors. Furthermore, it has lower sensitivity to extreme ultraviolet (EUV) light because the light is absorbed by various layers before the photodetector can detect it. And CMOS image sensors typically require an external power supply or battery, which increases cost and resources. Furthermore, when exposing multiple wafers consecutively, the user is unaware whether each exposure is applied uniformly across the wafer. Therefore, a detection radiation source that does not have these drawbacks or at least limits their uniformity is required.

[0064] The semiconductor manufacturing apparatus disclosed herein achieves greater uniformity in the radiation exposure of wafers. The apparatus includes multiple energy sensing pads placed on a chuck (or support) that typically supports the wafer during processing steps such as exposure. Between exposure steps, the intensity of the radiation source can be adjusted by sensing or determining the radiation intensity at the energy sensing pads placed on the chuck. The apparatus can accurately detect a variety of radiations, including but not limited to EUV and electron beams. The apparatus is compatible with general CMOS manufacturing processes. Furthermore, at least some of the embodiments are self-powered, eliminating the need for an external power supply or battery, which can help save time and resources. Additionally, when using the disclosed technique, the user can know that the wafer is being exposed uniformly or within predetermined critical values.

[0065] refer to Figure 1A The image shows a semiconductor manufacturing apparatus 100A according to some embodiments. The semiconductor manufacturing apparatus 100A includes a chamber 102, which includes a chuck (or support) 104, a shaft 106, and a radiation source 108. Figure 1A This is a simplified view of an exemplary semiconductor manufacturing equipment, and those familiar with the technology will recognize that there are various parts that can be added to or removed from the semiconductor manufacturing equipment 100A.

[0066] Chuck 104 may include multiple energy sensing pads (see example) Figure 2A These energy sensing pads are placed on the top surface facing the radiation source 108. In some embodiments, such energy sensing pads can receive radiation from the radiation source 108 when the top surface of the chuck 104 is exposed (e.g., without a substrate). Axis 106 supports the chuck 104 with the energy sensing pads. Circuitry can be placed within or on the bottom of the chuck 104, and this circuitry can help convert the radiation intensity into a signal (e.g., an electrical signal or a reference signal) that can be detected and analyzed. Once the radiation intensity has been analyzed, the radiation source 108 or a portion thereof can be adjusted to increase or decrease the intensity so that the next wafer placed on the chuck 104 is exposed to the radiation source 108 uniformly or at least more uniformly.

[0067] although Figure 1A The circuitry connected to the energy sensing pad on chuck 104, though not shown, can be connected to a wireless transmitter (see, for example...). Figure 5A and Figure 6A The wireless transmitter can wirelessly transmit electrical signals to a user-controlled receiver, and the user can determine whether the electrical signal intensity corresponding to a predetermined portion of the chuck is too high or too low. If the user determines that the electrical signal level is too low at the predetermined portion, the user can increase the intensity of the portion of the radiation source corresponding to the predetermined portion to the desired or predetermined level. If the user determines that the electrical signal level is too high at the predetermined portion, the user can decrease the intensity of the portion of the radiation source corresponding to the predetermined portion to the desired or predetermined level.

[0068] Furthermore, the process of detecting and adjusting the intensity of a radiation source can be automated. For example, a microcontroller or processor can detect the radiation intensity level and determine whether the intensity falls within a predetermined intensity level range. If the level is outside the range, the microcontroller or processor can increase the intensity if it is below the lower limit of the range, or decrease the intensity if it is above the upper limit of the range. This process can be repeated until the intensity is within the desired or predetermined range.

[0069] refer to Figure 1B This illustrates a semiconductor manufacturing apparatus 100B according to some embodiments. Similar to... Figure 1A Semiconductor manufacturing equipment 100A and semiconductor manufacturing equipment 100B include a chamber 102, a chuck 104, a shaft 106, and a radiation source 108. Additionally, wires 110 and a controller (e.g., a microcontroller) 112 are present.

[0070] The wire 110 can be connected to a circuit (not shown) that converts the radiation intensity level into an electrical signal. The electrical signal can be detected at a controller 112 located outside the chamber 102, and the user can adjust the radiation source intensity after determining that the electrical signal is too high or too low compared to the desired or predetermined level.

[0071] refer to Figure 2A A top view of a sensing device 200 including an energy sensing pad is shown in a semiconductor manufacturing apparatus according to some embodiments. The sensing device 200 may be formed on... Figures 1A to 1B The chuck 104 described herein. The sensing device 200 includes energy sensing pads (ESPs) 202, 204, 206, and 208 adjacent to each other. Although Figure 2A The sensor device 200 is shown with a specific number of ESPs placed on the chuck, but the disclosed technology is not limited to this, and more or fewer ESPs may be present on the chuck. Furthermore, although... Figure 2A The ESP is shown to have a rectangular or square shape, but the disclosed technology is not limited to this, and the ESP can have any shape, such as circular, triangular, hexagonal, etc. Furthermore, the disclosed technology can operate on chucks 104 of any size or wafers of any size.

[0072] ESPs 202, 204, 206, and 208 may include metals compatible with existing CMOS manufacturing processes, such as copper (Cu) or aluminum (Al). Radiation source 108 may be an argon fluoride (ArF) laser, an ultraviolet (UV) light source, a vacuum ultraviolet (VUV) light source, an extreme ultraviolet (EUV) light source, a deep ultraviolet (DUV) light source, an electron beam source, or any other suitable radiation source used to expose the wafer on chuck 104 for photolithography. Furthermore, although not shown, the ESP may include optoelectronic devices, such as a photodetector that converts radiation (e.g., optical signals, light, or electron beams) into electrical signals or currents.

[0073] refer to Figure 2B This figure shows a high-level schematic circuit diagram of a sensing device 200 according to some embodiments. Figure 2A The ESPs 202, 204, 206, and 208, and the general circuitry to which they are connected. See reference... Figure 2A The discussion, although showing only 4 ESPs and their associated circuits, may have more or fewer ESPs and their associated circuits.

[0074] ESPs 202, 204, 206, and 208 may include photodetectors or any type of device that converts light, laser light, or any type of radiation into electrical signals. For example, each of the ESPs 202, 204, 206, and 208 may include a photodetector that uses a diode to convert photons into current or voltage. ESPs 202, 204, 206, and 208 including photodetectors may be connected to circuits 212, 214, 216, and 218, respectively. Circuits 212, 214, 216, and 218 may convert the current level or voltage level output by ESPs 202, 204, 206, and 208, respectively, and output the current or voltage level to output nodes 222, 224, 226, and 228, respectively. Depending on the embodiment, output nodes 222, 224, 226, and 228 may include a wireless transmitter as discussed above, or may be an output to controller 112. Although not shown in detail, circuits 212, 214, 216 and 218 may include multiple input and / or output terminals and electronic devices such as transistors, wires, capacitors and the like.

[0075] Peripheral decoders 230 and 240 can be connected to circuits 212, 214, 216, and 218. For example, peripheral decoder 230 can be a column decoder, and peripheral decoder 240 can be a row decoder. (See reference) Figure 2B When peripheral decoders 230 and 240 are connected to ESPs 202, 204, 206, and 208, controller 112 can detect electrical signals output from all circuits or subsets of circuits connected to ESPs 202, 204, 206, and 208. For example, if controller 112 detects that the intensity detected by ESP 204 is less than a predetermined amount, controller 112 can turn off detection of ESPs 202, 206, and 208 while keeping detection of ESP 204 on, making the intensity detected at ESP 204 adjustable. Although not shown, outputs 222, 224, 226, and 228 can be connected to multiple bit lines connected to amplifiers that facilitate the detection of signals at outputs 222, 224, 226, and 228. Furthermore, the radiation intensities detected at ESP 202, 204, 206, and 208 can be used to determine the intensity profile of radiation source 108.

[0076] Furthermore, one of the ESPs 202, 204, 206, and 208, their associated circuits 212, 214, 216, and 218, and their outputs 222, 224, 226, and 228 may be referred to as a pixel. Pixels may be configured as a sensor array with multiple columns and rows, which are individually or collectively controlled using control signals from controller 112.

[0077] refer to Figure 3AA schematic circuit diagram of a sensing device 300 according to some embodiments is shown. The sensing device 300 may be as follows: Figure 2B A pixel in the pixel array shown. Sensing device 300 includes transistors 302, 304, and 306, ESP 308, and capacitors Cp and CBL. Although Figure 3A A specific number of electronic devices are shown, but the disclosed techniques are not limited thereto. Furthermore, although transistors 302, 304, and 306 are shown as n-type transistors, these transistors may be p-type (with corresponding reconfiguration of the devices). Examples of transistors 302, 304, and 306 include, but are not limited to, metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor (CMOS) transistors, P-channel metal-oxide-semiconductor (PMOS) transistors, N-channel metal-oxide-semiconductor (NMOS) transistors, bipolar junction transistors (BJTs), high-voltage transistors, high-frequency transistors, P-channel and / or N-channel field-effect transistors (PFETs / NFETs), FinFETs, planar MOS transistors with raised source / drain electrodes, nanosheet FETs, or the like. The sensing device 300 can be used with the radiation source 108, such as a UV light source, a VUV light source, an EUV light source, or a DUV light source.

[0078] Transistor 302 has a first terminal connected to electrical ground and a second terminal connected to ESP 308, node Vx, capacitor Cp, and transistor 304. Transistor 302 also has a gate terminal connected to a reset signal line, which can be controlled by controller 112. Figure 1B Output. Transistor 302 can act as a reset transistor. In other words, when the reset signal is set to a high level, any residual charge held at capacitor Cp or ESP 308 by transistor 302 is dissipated to ground through transistor 302. This deliberate dissipation helps ensure accurate measurement of radiation intensity.

[0079] Transistor 304 has a first terminal connected to transistor 306, a second terminal connected to power supply VDD, and a gate terminal connected to node Vx, which is connected to ESP 308, transistor 302, and capacitor Cp. Transistor 304 turns on when the voltage at node Vx reaches the turn-on voltage.

[0080] Transistor 306 has a first terminal connected to node VBL, a second terminal connected to the first terminal of transistor 304, and a gate terminal connected to the control line RS. Transistor 306 operates like a control transistor. In other words, when transistor 304 is also turned on, transistor 306 will also turn on when the voltage of the control line RS is set to the turn-on voltage. In other words, the current flowing through transistor 304 also flows through transistor 306.

[0081] The ESP 308 is Figure 2A and Figure 2B Any one of ESPs 202, 204, 206, and 208. When ESP 308 is exposed to radiation, a current Iph is generated that flows away from ESP 308 toward capacitor Cp. Figure 3A The current Iph in the diagram is the charging current. In other words, current Iph charges capacitor Cp. Over time, capacitor Cp is charged, causing the voltage level at node Vx to increase and turning on transistor 304. When transistor 306 turns on, the voltage level at node VBL also increases, thus charging capacitor CBL. Therefore, when ESP 308 is exposed to radiation, a current Iph is generated, and current Iph flows to capacitor Cp. The intensity of current Iph depends directly on or is substantially proportional to the intensity of radiation exposed to ESP 308. When capacitor Cp is charged, transistor 304 turns on, and the amount of current flowing from power supply VDD to node VBL and into capacitor CBL is substantially proportional to the intensity of radiation exposed to ESP 308. Therefore, the voltage measurement at node VBL indicates the intensity of radiation at ESP 308.

[0082] Sensing device 300 can be like Figure 2B This is a pixel in the pixel array shown. Each pixel can individually detect the radiation intensity at each ESP within its ESP array. (Reference) Figure 3A The pixels can be read from the control signal RS set by a controller such as controller 112. In other words, in an array with multiple columns and multiple rows, each pixel in a column can be read from the bit lines connected to node VBL. Each bit line in the bit line can be connected to an amplifier, which is the output of a peripheral decoder 230 similar to a row decoder, and the output can be sent to controller 112 via a wire such as wire 110. The pixels in each column can be read sequentially, making it possible to detect the entire cross-section of chuck 104. This can facilitate the adjustment of multiple areas of pixels at once.

[0083] refer to Figure 3B This illustrates some embodiments. Figure 3A The waveform diagram of sensing device 300 is shown. The x-axis represents time in seconds, and the y-axis represents the voltage at node VBL. Reset line 316 indicates when the turn-on voltage of transistor 302 is set on the reset line. Two other lines are shown: line 312, which is a measurement of node VBL when the current Iph is approximately 5 pA, and line 314, which is a measurement of node VBL when the current Iph is approximately 1 pA. However, the current level at Iph is not limited to these, and the current level may be lower or higher than any of these current levels. Furthermore, although specific units and values ​​are shown, the disclosed techniques are not limited thereto. For example, the time for the reset signal to set to the turn-on voltage (0.00s, 0.05s, 0.10s, etc.) does not have to be a 0.05s interval. In some embodiments, the interval may be shorter or longer than 0.05s, and in some embodiments, it may not be a regular interval. In other words, users can choose to set the reset signal to have an on-state voltage, so that VBL measurements can be performed as needed.

[0084] At time 0.00s, connected to transistor 302 ( Figure 3A The reset signal on the reset line at the gate terminal of transistor 306 is set to the turn-on voltage to turn on transistor 302. When transistor 302 is turned on, electrons accumulated at both ESP 308 and capacitor Cp are flushed to ground. Although not shown, the voltage at control line RS can also be set to the turn-on voltage, allowing transistor 306 to transmit the voltage generated through transistor 304 to node VBL and capacitor CBL. After the reset phase is complete, the reset signal can be set back to the turn-off voltage.

[0085] After the reset signal is set to the off voltage and transistor 302 is turned off, current Iph begins to flow to capacitor Cp. Current Iph is generated because the radiation received at ESP 308 is converted into current Iph. As discussed above, line 312 corresponds to the voltage level measured at VBL when current Iph is 5pA, and line 314 corresponds to the voltage level measured at VBL when current Iph is 1pA. As capacitor Cp begins to accumulate charge, the voltage level at node Vx increases, and eventually the gate of transistor 304 is set to the turn-on voltage. Transistor 304 is then turned on, allowing current to flow through transistors 304 and 306.

[0086] At approximately 0.018s, for line 312, the voltage level at VBL begins to increase as charge accumulates at capacitor CBL. At approximately 0.035s, for line 314, the voltage level at VBL begins to increase. Therefore, the voltage level measured at node VBL depends on the current Iph, which depends on the amount of radiation exposed to ESP 308. When determining whether the radiation exposure intensity at ESP 308 is correct or desired, the user can compare line 312 or line 314 with a predetermined waveform. For example, the predetermined waveform may have a specific slope or an acceptable slope range. The user can determine that the slope on line 312 or line 314 is too low compared to the predetermined waveform, in which case the radiation intensity is too low and the intensity of the radiation source is increased. Alternatively, if the slope on line 312 or line 314 is high compared to the predetermined waveform, the user can determine that the intensity is too high and the intensity of the radiation source is decreased. As another example, the predetermined waveform may have a voltage level or an acceptable range of voltage levels, and when the waveform is outside this range, the user can adjust the intensity level of the radiation source. Therefore, the next wafer placed on chuck 104 can be exposed to a more uniform radiation level with the desired intensity.

[0087] refer to Figure 4A A schematic circuit diagram of a sensing device 400 according to some embodiments is shown. The sensing device 400 may be as follows: Figure 2B A pixel in the pixel array shown. Sensing device 400 includes transistors 402, 404, and 406, ESP 408, resistor RDC, and capacitors Cp and CBL. Although Figure 4AA specific number of electronic devices are shown, but the disclosed technology is not limited thereto. Furthermore, although transistors 402, 404, and 406 are shown as n-type transistors, these transistors may be p-type (with the devices reconfigured accordingly). Examples of transistors 402, 404, and 406 include, but are not limited to, metal oxide semiconductor field-effect transistors (MOSFETs), complementary metal oxide semiconductor (CMOS) transistors, P-channel metal-oxide semiconductor (PMOS) transistors, N-channel metal-oxide semiconductor (NMOS) transistors, bipolar junction transistors (BJTs), high-voltage transistors, high-frequency transistors, P-channel and / or N-channel field-effect transistors (PFETs / NFETs), FinFETs, planar MOS transistors with raised source / drain, nanosheet FETs, or the like. Sensing device 400 may be used with radiation source 108, such as an electron beam source.

[0088] Transistor 402 has a first terminal connected to node Vx and a second terminal connected to ESP 408, capacitor Cp, and transistor 404. Transistor 402 also has a second terminal connected to power supply VDD and a gate terminal connected to a reset signal line, which is accessible from controller 112. Figure 1B The transistor 402 can act as a reset transistor. In other words, when the reset signal is set to a high level, transistor 402 turns on and charges capacitor Cp. This intentional dissipation of charge helps ensure accurate measurement of radiation intensity.

[0089] Transistor 404 has a first terminal connected to transistor 406, a second terminal connected to power supply VDD, and a gate terminal connected to node Vx, which is connected to ESP 408, transistor 402, and capacitor Cp. Transistor 404 turns on when the voltage at node Vx reaches the turn-on voltage.

[0090] Transistor 406 has a first terminal connected to node VBL, a second terminal connected to the first terminal of transistor 404, and a gate terminal connected to the control line RS. Transistor 406 operates like a control transistor. In other words, transistor 406 turns on when the voltage on the control line RS is set to the turn-on voltage, provided that transistor 404 is also on. In other words, the current flowing through transistor 404 also flows through transistor 406.

[0091] When transistor 406 is turned on, node VBL is pulled up and charges CBL. In other words, when the reset signal set RS signal is set to the turn-on voltage, charging current flows from VDD through transistors 404 and 406 and charges CBL. Therefore, when the sensing device 400 is reset, capacitor CBL is charged and VBL is set to a high voltage.

[0092] ESP 408 is Figure 2A and Figure 2B The ESP is any one of ESPs 202, 204, 206, and 208. When ESP 408 is exposed to an electron beam, a current Iph is generated flowing away from the capacitor towards ESP 408. Over time, capacitor Cp is charged, causing the voltage level at node Vx to decrease and turning off transistor 404. When transistor 406 turns off, the voltage level at node VBL also decreases, causing capacitor CBL to discharge through resistor RDC. Therefore, when ESP 408 is exposed to radiation, a current Iph is generated, and this current Iph flows to capacitor Cp. The intensity of current Iph depends directly on or is substantially inversely proportional to the intensity of radiation to which ESP 408 is exposed. When capacitor Cp is discharged, transistor 404 turns off, and capacitor CBL discharges at a rate substantially inversely proportional to the intensity of radiation to which ESP 408 is exposed. Therefore, the voltage measurement at node VBL indicates the intensity of radiation at ESP 408.

[0093] Each pixel can individually detect the radiation intensity at each ESP within the pixel's ESP. (Reference) Figure 4AThe pixels can be read from the control signal RS set by a controller such as controller 112. In other words, in an array with multiple columns and multiple rows, each pixel in a column can be read from the bit lines connected to node VBL. Each bit line in the bit line can be connected to an amplifier, which is the output of a peripheral decoder 230 similar to a row decoder, and the output can be sent to controller 112 via a wire such as wire 110. Columns of pixels can be read sequentially, making it possible to detect the entire cross-section of chuck 104. This can facilitate the adjustment of multiple areas of pixels at once. However, unlike the control signal on the control line RS in sensing device 300, which must be set to an on voltage to sense the voltage level at VBL, the control signal in sensing device 400 must be set to an off voltage. In other words, the control signal on the control line RS must be set to an off voltage, electrically disconnecting node VBL from the power supply VDD. The rate of discharge of capacitor CBL is measured to determine the radiation intensity.

[0094] refer to Figure 4B This illustrates some embodiments. Figure 4A The waveform diagram of sensing device 400 is shown. The x-axis represents time in seconds, and the y-axis represents the voltage at node VBL. Reset line 416 indicates when the turn-on voltage of transistor 402 is set on the reset line. Two other lines are shown: line 412, which is the measurement of node VBL when the current Iph is approximately 5 pA, and line 414, which is the measurement of node VBL when the current Iph is approximately 1 pA. However, the current level at Iph is not limited to these, and the current level may be lower or higher than any of these current levels. Furthermore, although specific units and values ​​are shown, the disclosed techniques are not limited thereto. For example, the time for the reset signal to set to the turn-on voltage (0.00s, 0.05s, 0.10s, etc.) does not have to be a 0.05s interval. In some embodiments, the interval may be shorter or longer than 0.05s, and in some embodiments, it may not be a regular interval. In other words, users can choose to set the reset signal to have an on-state voltage, so that VBL measurements can be performed as needed.

[0095] At time 0.00s, connected to transistor 402 ( Figure 4A The reset signal on the reset line at the gate terminal of transistor 402 is set to the turn-on voltage to turn on transistor 402. When transistor 402 is turned on, capacitor Cp is charged. Additionally, the voltage at the control line RS can also be set to the turn-on voltage, allowing transistor 406 to transmit the voltage generated through transistor 404 to node VBL and capacitor CBL, thus charging capacitor CBL. After the reset phase is complete, the reset signal can be set back to the turn-off voltage. Transistors 404 and 406 remain on.

[0096] After the reset signal is set to the off voltage and transistor 402 is turned off, a discharge current Iph begins to flow to capacitor Cp. This current Iph is generated because the radiation received at ESP 408 is converted into current Iph. As discussed above, line 412 corresponds to the voltage level measured at VBL when the current Iph is 5pA, and line 414 corresponds to the voltage level measured at VBL when the current Iph is 1pA. As capacitor Cp begins to discharge, the voltage level at node Vx decreases, and eventually the gate of transistor 404 is set to the off voltage. Transistor 404 is then turned off, preventing current from flowing through transistors 404 and 406.

[0097] As time progresses, for line 412, the voltage level at VBL begins to decrease because charge accumulates at capacitor CBL. For line 414, the voltage level at VBL begins to decrease at a faster rate than that of line 412. Because the discharge current intensity of current Iph at 5pA is greater than that at 1pA, the slope or rate of decrease of line 414 is greater than that of line 412. Therefore, transistor 404 will turn off faster at Iph at 5pA compared to at 1pA. Therefore, the voltage level measured at node VBL depends on current Iph, which depends on the amount of radiation exposed to ESP 408. When determining whether the radiation exposure intensity at ESP 408 is correct or desired, the user can compare line 412 or line 414 with a predetermined waveform. For example, the predetermined waveform may have a specific slope or an acceptable slope range. And the user can determine that the slope on line 412 or line 414 is too low compared to the predetermined waveform, in which case the radiation intensity is too low and the intensity of the radiation source is increased. Alternatively, if the slope on line 412 or line 414 is higher than the predetermined waveform, the user can determine that the intensity is too strong and reduce the intensity of the radiation source. As another example, the predetermined waveform may have a voltage level or an acceptable range of voltage levels, and when the waveform is outside this range, the user can adjust the intensity level of the radiation source. Therefore, the next wafer placed on chuck 104 can be exposed to a more uniform radiation level with the desired intensity.

[0098] and Figure 3B The waveforms of the sensing device 300 shown are different. Figure 4B The waveform shows that the voltage level at node VBL decreases due to the discharge of capacitor CBL. Furthermore, the rate of decrease in voltage level is inversely proportional to, or substantially inversely proportional to, the radiation intensity to which the ESP408 is exposed.

[0099] refer to Figure 5A A schematic circuit diagram of a sensing device 500 according to some embodiments is shown. The sensing device 500 may be as follows: Figure 2BA pixel in the pixel array shown. Sensing device 500 includes diode 502, inverter 504, transistors 506 and 508, capacitors 510 and 512, nodes Vx1, Vx2 and Vout, wireless transmitter 520, energy pad (EP) 522, and ESPs 524 and 526. Although Figure 5A A specific number of electronic devices are shown, but the disclosed technology is not limited thereto. Furthermore, although transistors 506 and 508 are shown as n-type transistors, these transistors may be p-type (with corresponding reconfiguration of the devices). Examples of transistors 506 and 508 include, but are not limited to, metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor (CMOS) transistors, P-channel metal-oxide-semiconductor (PMOS) transistors, N-channel metal-oxide-semiconductor (NMOS) transistors, bipolar junction transistors (BJTs), high-voltage transistors, high-frequency transistors, P-channel and / or N-channel field-effect transistors (PFETs / NFETs), FinFETs, planar MOS transistors with raised source / drain, nanosheet FETs, or the like. Sensing device 500 can be used with radiation source 108, such as a UV light source, VUV light source, EUV light source, or DUV light source.

[0100] ESP 524 and ESP 526 are two adjacent pixels on the chuck 104. However, ESP 524 and ESP 526 can also be non-adjacent pixels, and other pixels may exist between them. In other words, the sensing device 500 can detect the radiation intensity at two adjacent or non-adjacent pixels. And depending on the resulting waveform, the user can determine whether the radiation intensity at ESP 524 or ESP 526, or both, is too high or too low.

[0101] Diode 502 is connected in series to EP 522, which absorbs radiation from radiation source 108. Diode 502 is radiatively energized, thus allowing sensing device 500 to be self-energized without an external power supply like the power supply VDD in sensing devices 300 and 400. Additionally, although... Figure 5A Three diodes 502 are shown, but the embodiment is not limited to this and there may be more or fewer diodes in series. Current Iph flows through diodes 502 and reaches inverter 504.

[0102] The input of inverter 504 is connected to the output of one of the diodes in diode 502 and node Vout, which is connected to capacitor 512. Because the input of inverter 504 is connected to capacitor 512, inverter 504 can track the voltage level at node Vout as capacitor 512 is charged and discharged. This effect will be explained in more detail below. The output of inverter 504 is node Vx1. Measurements of this node are shown below. Figure 5B middle.

[0103] Transistor 506 has a first terminal connected to electrical ground, a second terminal connected to ESP 524, and a gate terminal connected to node Vx1, which is connected to the output of inverter 504. When the input of inverter 504 (at node Vout) changes between a high voltage and a low voltage, the output of inverter (at node Vx1) changes accordingly between a low voltage and a high voltage. When the voltage at node Vx1 reaches the turn-on voltage, transistor 506 turns on, causing capacitor 510 (at node Vx2) to discharge. When the voltage at node Vx1 falls below the turn-on voltage, transistor 506 turns off, and capacitor 510 is charged by a current Iph1 generated by radiation exposed to ESP 524.

[0104] Transistor 508 has a first terminal connected to electrical ground. Transistor 508 has a second terminal connected to ESP 526, capacitor 512, node Vout, and wireless transmitter 520. The transistor also has a gate terminal connected to node Vx2, capacitor 510, and the second terminal of transistor 506. As discussed above, when capacitor 510 is charged or discharged, the voltage level at node Vx2 changes. The change in voltage level at node Vx2 also changes whether transistor 508 is turned on or off. For example, when node Vx2 is at the turn-on voltage, transistor 508 is turned on, and the charge on capacitor 512 is discharged through transistor 508. When node Vx2 is below the turn-on voltage, transistor 508 is turned off, and capacitor 512 is charged by converting radiation at ESP 526 into current Iph2. Therefore, when capacitor 510 is charged and discharged, capacitor 512 is discharged and charged respectively, depending on whether transistor 508 is turned on or off. The node Vout, which is also connected to the input of inverter 504, oscillates between high and low voltage.

[0105] The wireless transmitter 520 may include an antenna for the voltage level at the transmitting node Vout. A receiver (not shown) may receive wireless signals from the wireless transmitter 520. The receiver may be connected to a controller (not shown) that may determine whether the rate of change of the voltage level or the voltage level at node Vout is sufficiently high or sufficiently low.

[0106] refer to Figure 5B This illustrates some embodiments. Figure 5A The waveform diagram of the sensing device 500 is shown. The diagram illustrates three different waveforms: line 530, line 532, and line 534. Line 530 represents the voltage level measured at node Vx2, line 532 represents the voltage level measured at node Vx1, and line 534 represents the voltage level measured at node Vout. For clarity, the three lines are stacked on top of each other. Although the voltage levels at nodes Vx1, Vx2, and Vout are shown with specific slopes and values, the disclosed technique is not limited to this. In other words, the slope and value of the voltage levels may vary depending on the radiation intensity level that the user intends to set.

[0107] As discussed above, line 532, which measures the voltage level at node Vx1, tracks the output of inverter 504 and the input to the gate of transistor 506. Line 530, which measures the voltage level at node Vx2, tracks the voltage of capacitor 510. When the voltage level at node Vx1 increases and exceeds the threshold voltage (or turn-on voltage) of transistor 506, the voltage level at node Vx2 decreases because the charge accumulated at capacitor 510 is discharged to ground through transistor 506. When the voltage level at node Vx1 decreases to below the turn-on voltage of transistor 506, transistor 506 turns off, and current Iph1 generated based on radiation at ESP 524 flows to capacitor 510, thereby accumulating charge again. Therefore, the voltage level at Vx2 increases. Thus, line 530 forms a wave as capacitor 510 is discharged and charged. The discharge and charge rates tracked at node Vx2 represent the radiation intensity level at ESP 524.

[0108] Line 534 represents the voltage level at node Vout, tracking the output of transistor 508 and the charging level at capacitor 512. When the voltage level at node Vx2 increases and exceeds the threshold voltage (or turn-on voltage) of transistor 508, the voltage level at node Vout decreases because the charge accumulated at capacitor 510 is discharged to ground through transistor 508. When the voltage level at node Vx2 drops below the turn-on voltage of transistor 508 due to the discharge of charge at capacitor 510, transistor 508 turns off, and capacitor 512 is charged by the current Iph2 generated by ESP 526, and the voltage level at Vout increases. Therefore, line 534 forms a wave as capacitor 512 discharges and charges. Since transistor 508 turns on and off based on node Vx2, whose input tracks the radiation intensity at ESP 524, the rate of charging and discharging of capacitor 512 indicates the radiation intensity level at ESP 526 and the radiation level at ESP 524. Therefore, the radiation intensity levels at ESP 524 and ESP 526 can be measured by the waveform formed at node Vout.

[0109] refer to Figure 5C This illustrates some embodiments. Figure 5A The output frequency diagram of the sensing device 500 is shown. The x-axis represents the value of the current Iph (or Iph1 or Iph2), and the y-axis represents the output frequency at node Vout. The output frequency increases as the current level increases. For example, the output frequency at node Vout is directly proportional to or substantially proportional to the current level of Iph. Although the output frequency at node Vout is shown with a specific slope and value, the disclosed technique is not limited thereto. In other words, the slope and value of the output frequency may vary depending on the radiation intensity level that the user intends to set.

[0110] refer to Figure 6A A schematic circuit diagram of a sensing device 600 according to some embodiments is shown. The sensing device 600 may be as follows: Figure 2B A pixel in the pixel array shown. The sensing device 600 can be used with the radiation source 108, such as a UV light source, VUV light source, EUV light source, or DUV light source. The sensing device 600 includes a transistor 602, a ring oscillator 612 with inverters 604A, 604B, and 604C, a node Vout, a wireless transmitter 608, and a node VDD. Although Figure 6AA specific number of electronic devices are shown, but the disclosed technology is not limited thereto. Furthermore, although transistor 602 is shown as an n-type transistor, it may be p-type (with corresponding reconfiguration of the devices). Examples of transistor 602 include, but are not limited to, metal oxide semiconductor field-effect transistors (MOSFETs), complementary metal oxide semiconductor (CMOS) transistors, P-channel metal-oxide semiconductor (PMOS) transistors, N-channel metal-oxide semiconductor (NMOS) transistors, bipolar junction transistors (BJTs), high-voltage transistors, high-frequency transistors, P-channel and / or N-channel field-effect transistors (PFETs / NFETs), FinFETs, planar MOS transistors with raised source / drain, nanosheet FETs, or the like.

[0111] Transistor 602 has a first terminal connected to electrical ground and a second terminal connected to ESP 610 and node VDD. The second electrode is also connected to the gate terminal of transistor 602, such that transistor 602 is always on as long as the voltage at ESP 610 is greater than the turn-on voltage of transistor 602.

[0112] The ring oscillator 612 includes inverters 604A to 604C. Although Figure 6A The ring oscillator has 3 inverters, but more than 3 inverters can exist; an odd number of inverters is sufficient to form a ring oscillator. Each inverter in inverters 604A to 604C is enabled by the voltage at node VDD. Therefore, the output of the ring oscillator 612 at node Vout depends on the voltage at VDD, which in turn depends on the radiation at ESP 610.

[0113] The wireless transmitter 608 may include an antenna for the voltage level at the transmitting node Vout. A receiver (not shown) may receive wireless signals from the wireless transmitter 608. The receiver may be connected to a controller (not shown) that may determine whether the rate of change of the voltage level or the voltage level at node Vout is sufficiently high or sufficiently low.

[0114] If the voltage at node VDD is high, the power supply to inverters 604A-604C is also high, which increases the switching rate of the inverter output. Therefore, when the voltage at node VDD increases, the output of the ring oscillator at node Vout will switch between high and low more quickly. Users monitoring the intensity level at ESP 610 can compare the output waveform of the voltage level at node Vout with a predetermined waveform to determine whether the radiation intensity level at ESP 610 is too high or too low. For example, if the switching speed is too fast compared to the predetermined switching speed (or greater than the acceptable switching speed range), the user can reduce the radiation intensity at radiation source 108, thus reducing the radiation at ESP 610. Conversely, if the switching speed is too slow compared to the predetermined switching speed (or lower than the acceptable switching speed range), the user can increase the radiation intensity at radiation source 108, thus increasing the radiation at ESP 610.

[0115] refer to Figure 6B This illustrates some embodiments. Figure 6A The output voltage diagram of the sensing device 600 is shown. The x-axis represents the current Iph, and the y-axis represents the voltage at node VDD. The term "au" refers to arbitrary units, meaning the numbers shown on the x and y axes. Although the voltage level at node VDD is shown with a specific slope and value, the disclosed technique is not limited to this. In other words, the slope and value of the voltage level may vary depending on the radiation intensity level that the user intends to set.

[0116] ESP 610 converts radiation received at ESP 610 into a current Iph. Therefore, the voltage at node VDD depends on the amount of radiation received by ESP 610. As the current Iph increases, the voltage at VDD also increases.

[0117] refer to Figure 6C This illustrates some embodiments. Figure 6A The output frequency diagram of the sensing device 600 is shown. The x-axis represents the voltage level at node VDD, and the y-axis represents the output frequency (or output signal frequency) at node Vout. Although the output frequency is shown with a specific slope and value, the disclosed technique is not limited thereto. In other words, the slope and value of the output frequency may vary depending on the radiation intensity level that the user intends to set.

[0118] As discussed above, when ESP 610 is exposed to more radiation, the voltage level at node VDD can increase. This increased exposure at ESP 610 also increases the voltage level at node VDD, and this increase in the voltage level at node VDD also increases the power supply to the ring oscillator 612 and inverters 604A-604C. This increased power supply also increases the switching speed of inverters 604A-604C, which in turn increases the output frequency at node Vout, the output frequency of the ring oscillator 612. Therefore, the radiation intensity level at ESP 610 increases the output frequency at node Vout. The output signal frequency waveform can be compared with a predetermined waveform to determine whether the radiation intensity needs adjustment. For example, if the slope of the output frequency graph is too high compared to a predetermined slope or a predetermined slope range, the intensity can be adjusted to be lower so that the output frequency is substantially the same as or within the predetermined slope range. As another example, if the slope of the output frequency is too low, the intensity can be adjusted to be greater so that the output frequency is substantially the same as or within the predetermined slope range. Therefore, the output frequency is substantially proportional to the radiation intensity at the ESP 610.

[0119] Figure 7 A flowchart illustrating an exemplary method using a semiconductor manufacturing apparatus according to an embodiment is provided. It should be noted that method 700 is merely an example and is not intended to limit this disclosure. Therefore, it should be understood that... Figure 7 Additional steps / operations are provided before, during, and after Method 700, and this document may only briefly describe some of the other operations.

[0120] In short, method 700 begins with operation 702, which unloads the first substrate self-support. Then, method 700 may proceed to operation 704, which exposes the support using a radiation source to generate a reference signal. Then, method 700 may proceed to operation 706, which determines the level of the reference signal. Then, method 700 may proceed to operation 708, which adjusts the intensity of the radiation source in response to the determination that the level of the reference signal does not meet a predefined condition.

[0121] Operation 702 includes unloading the first substrate from the support (or chuck 104). Operation 702 is performed after the first substrate has been exposed to radiation such as EUV light or an electron beam or any of the radiation sources discussed above. In other words, the following operation can be performed when there is no substrate on the support or before the next substrate is loaded onto the support.

[0122] Method 704 includes using a radiation source to expose a support to generate a reference signal. The reference signal may be, for example, a sensing device 300 (…). Figures 3A to 3B The voltage level at node VBL in the ) and the sensing device 400 ( Figures 4A to 4B The voltage level at node VBL in the ) and the sensing device 500 ( Figures 5A to 5B The voltage level at nodes Vx1, Vx2, or Vout, and the sensing device 500. Figure 5A , Figure 5C The output frequency at node Vout, and the sensing device 600 ( Figures 6A to 6B The voltage level or sensing device 600 at node VDD. Figure 6A , Figure 6C The output frequency at node Vout.

[0123] Operation 706 includes determining the level of the reference signal. As discussed with respect to the various sensing devices in sensing devices 400, 500, 600 and method 700, the reference signal is substantially proportional to or inversely (negatively) proportional to the radiation intensity. Therefore, the reference signal can be used to determine whether the radiation intensity is sufficient to achieve uniformity of exposure over the entire wafer.

[0124] Operation 708 includes adjusting the intensity of radiation source 108 in response to a determination that the level of the reference signal does not meet predefined conditions (e.g., a predetermined slope or value, or a predetermined range of slope or values). In other words, if the level of the reference signal is lower than a predefined level, the intensity of the corresponding portion of the radiation source can be adjusted to be greater. If the level of the reference signal is greater than a predefined level, the intensity of the corresponding portion of the radiation source can be adjusted to be lower. Therefore, the entire radiation source or different portions of the radiation source can be adjusted so that the radiation intensity level exposed to the next wafer is uniform or more uniform.

[0125] In one embodiment of this disclosure, a semiconductor manufacturing apparatus is disclosed. The semiconductor manufacturing apparatus includes: a support for holding a substrate; a radiation source for providing radiation to transfer a pattern onto the substrate; a plurality of sensing devices for providing a reference signal based on the intensity of the radiation in the absence of a substrate; and a controller operatively coupled to the sensing devices for adjusting the intensity of the radiation based on the reference signal. In some embodiments, each sensing device includes at least one radiation receiving device for converting the radiation into an electrical signal, and wherein the radiation receiving devices are configured as an array disposed across a top surface of the support. In some embodiments, each sensing device includes a circuit operatively coupled to a corresponding radiation receiving device, the circuit providing a reference signal proportional to the intensity of the radiation. In some embodiments, the circuit includes: a first transistor gated by a reset signal; a second transistor gated by a charging signal substantially proportional to the electrical signal; and a third transistor gated by a control signal; wherein the second transistor is activated based on the charging signal being higher than a threshold value, thereby causing the third transistor to follow the electrical signal to provide the reference signal. In some embodiments, the radiation source includes a light source selected from the group consisting of: an extreme ultraviolet (EUV) lithography light source, a deep ultraviolet (DUV) lithography light source, an asynchronous vacuum ultraviolet (VAU) lithography light source, and an argon fluoride laser. In some embodiments, the circuit includes: a first transistor gated by a reset signal; a second transistor gated by a discharge signal substantially inversely proportional to an electrical signal; and a third transistor gated by a control signal; wherein the second transistor is deactivated based on the discharge signal falling below a threshold, thereby causing the third transistor to follow the electrical signal to provide a reference signal. In some embodiments, the radiation source includes an electron beam source. In some embodiments, the circuit includes: a radiation-enabled first transistor; a radiation-enabled second transistor; and an amplifier; wherein the first and second transistors are alternately activated, thereby causing the amplifier to provide a reference signal as an oscillation frequency signal. In some embodiments, the radiation source includes a light source selected from the group consisting of: an extreme ultraviolet (EUV) lithography light source, a deep ultraviolet (DUV) lithography light source, an asynchronous vacuum ultraviolet (VAU) lithography light source, and an argon fluoride laser. In some embodiments, the circuit includes: a ring oscillator; and an amplifier coupled to an output of the ring oscillator; wherein the ring oscillator is biased by a supply voltage substantially proportional to an electrical signal, thereby causing the amplifier to provide a reference signal as an oscillation frequency signal. In some embodiments, the radiation source includes a light source selected from the group consisting of: an extreme ultraviolet lithography light source, a deep ultraviolet lithography light source, an unmodulated vacuum ultraviolet lithography light source, and an argon fluoride laser. In some embodiments, each sensing device in the sensing apparatus is independently activated to monitor the intensity of radiation received on a separate portion of the support.

[0126] In another embodiment of this disclosure, a semiconductor manufacturing apparatus is disclosed. The semiconductor manufacturing apparatus includes: a support for holding a substrate; a radiation receiving device for absorbing radiation received on a top surface of the support; and a circuit electrically coupled to the radiation receiving device for generating a reference signal based on the intensity of the absorbed radiation. The reference signal may be substantially proportional to the intensity, thereby allowing the intensity to be adjusted accordingly. In some embodiments, the radiation receiving device includes a plurality of pixels configured in an array for detecting the intensity of the absorbed radiation. In some embodiments, the circuit is enabled by the absorbed radiation. In some embodiments, the circuit includes: a wireless transmitter for transmitting the reference signal. In some embodiments, the circuit includes a plurality of transistors, wherein a first transistor is gated by a reset signal, and wherein a second transistor is gated by a control signal.

[0127] In yet another embodiment of this disclosure, a method for manufacturing a plurality of semiconductor devices is disclosed. The method includes unloading the first substrate from the support after exposing it with a radiation source. The method also includes exposing the support with the radiation source to generate a reference signal, and determining the level of the reference signal, the level being substantially proportional to the intensity of the radiation source. The method further includes adjusting the intensity of the radiation source in response to determining that the level of the reference signal does not meet a predefined condition before loading a second substrate. In some embodiments, the support includes: a plurality of energy sensing pads; and a plurality of circuits electrically connected to the energy sensing pads, wherein the exposure operation includes: converting the intensity of the radiation source at one of the energy sensing pads into a reference signal via the energy sensing pads and the circuits. In some embodiments, the determination operation includes: measuring a voltage or an output frequency of the reference signal.

[0128] The foregoing outlines the features of several embodiments, enabling those skilled in the art to better understand the nature of this disclosure. Those skilled in the art will understand that they can readily use this disclosure as the basis for designing or modifying other processes and structures for implementing the same purpose and / or achieving the advantages of the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made herein without departing from the spirit and scope of this disclosure.

Claims

1. A semiconductor manufacturing apparatus characterized by comprising: Comprising: a support for placing a substrate; a radiation source for providing radiation to transfer a pattern onto the substrate; a plurality of sensing devices for providing a reference signal based on an intensity of the radiation in an absence of the substrate; and a controller operatively coupled to the plurality of sensing devices, the controller for adjusting the intensity of the radiation based on the reference signal, wherein each sensing device of the plurality of sensing devices comprises a circuit comprising a first transistor gated by a charging signal substantially proportional to the reference signal, a second transistor gated by a reset signal, a third transistor gated by a control signal; wherein the first transistor is enabled based on the charging signal being above a threshold value, thereby causing the third transistor to follow an electrical signal to provide the reference signal. Each sensing device of the plurality of sensing devices comprises at least one radiation receiving device for converting the radiation into the electrical signal, and wherein the at least one radiation receiving device is configured as an array placed across a top surface of the support.

2. The semiconductor manufacturing apparatus according to claim 1, wherein The circuit is operatively coupled to a corresponding radiation receiving device, the circuit for providing the reference signal proportional to the intensity of the radiation.

3. The semiconductor manufacturing apparatus according to claim 2, wherein wherein the circuit is operatively coupled to a corresponding radiation receiving device, the circuit for providing the reference signal proportional to the intensity of the radiation.

4. The semiconductor manufacturing apparatus according to claim 1, wherein wherein the radiation source comprises a light source selected from the group consisting of: an extreme ultraviolet lithography light source, a deep ultraviolet lithography light source, a differentially tuned vacuum ultraviolet lithography light source, and an argon fluoride laser.

5. The semiconductor manufacturing apparatus according to claim 4, wherein wherein the radiation source comprises a light source selected from the group consisting of: an extreme ultraviolet lithography light source, a deep ultraviolet lithography light source, a differentially tuned vacuum ultraviolet lithography light source, and an argon fluoride laser.

6. The semiconductor manufacturing apparatus according to Claim 1, wherein wherein the radiation source comprises an electron beam source.

7. The semiconductor manufacturing apparatus according to claim 6, wherein wherein the circuit comprises an amplifier, and wherein the second transistor is enabled by the radiation, the third transistor is enabled by the radiation, and wherein the first transistor and the second transistor are alternately enabled, thereby causing the amplifier to provide the reference signal as an oscillating frequency signal.

8. The semiconductor manufacturing apparatus according to Claim 3, wherein wherein the radiation source comprises a light source selected from the group consisting of: an extreme ultraviolet lithography light source, a deep ultraviolet lithography light source, a differentially tuned vacuum ultraviolet lithography light source, and an argon fluoride laser.

9. The semiconductor manufacturing apparatus according to claim 8, wherein 10. The semiconductor manufacturing apparatus of claim 3, wherein: the circuit comprises: a ring oscillator; and an amplifier coupled to an output of the ring oscillator; wherein the ring oscillator is biased by a supply voltage substantially proportional to the electrical signal, thereby causing the amplifier to provide the reference signal as an oscillating frequency signal. wherein the radiation source comprises a light source selected from the group consisting of: an extreme ultraviolet lithography light source, a deep ultraviolet lithography light source, a differentially tuned vacuum ultraviolet lithography light source, and an argon fluoride laser.

11. The semiconductor manufacturing apparatus according to claim 10, wherein wherein each sensing device of the plurality of sensing devices is independently enabled to monitor the intensity of the radiation received over a respective portion of the support.

12. The semiconductor manufacturing apparatus according to Claim 1, wherein Comprising:

13. A semiconductor manufacturing apparatus, characterized by comprising: a support for placing a substrate; ​ a radiation receiving device for absorbing radiation received over a top surface of the support; and a circuit electrically coupled to the radiation receiving device, the circuit for generating a reference signal based on an intensity of the absorbed radiation; wherein the reference signal is substantially proportional to the intensity, thereby allowing adjusting the intensity accordingly; wherein the circuit comprises a first transistor gated by a charging signal substantially proportional to the reference signal, a second transistor gated by a reset signal, a third transistor gated by a control signal; wherein the first transistor is enabled based on the charging signal being above a threshold value, thereby causing the third transistor to follow an electrical signal to provide the reference signal.

14. The semiconductor manufacturing apparatus according to Claim 13, wherein The radiation receiving device comprises a plurality of pixels configured as an array, said plurality of pixels for detecting the intensity of the absorbed radiation.

15. The semiconductor manufacturing apparatus according to Claim 13, wherein wherein the circuit is enabled by the absorbed radiation.

16. The semiconductor manufacturing apparatus according to Claim 13, wherein wherein the circuit comprises: a wireless transmitter for transmitting the reference signal.

17. The semiconductor manufacturing apparatus according to Claim 13, wherein wherein the radiation receiving device comprises a plurality of pixels configured as an array, said plurality of pixels for detecting the intensity of the absorbed radiation, and wherein the circuit is enabled by the absorbed radiation.

18. A method for manufacturing a plurality of semiconductor devices, characterized by, comprising: exposing a first substrate placed on a support with a radiation source; exposing the support with the radiation source to generate a reference signal; determining a level of the reference signal, the level being substantially proportional to an intensity of the radiation source; adjusting the intensity of the radiation source in response to determining that the level of the reference signal does not satisfy a predefined condition before loading a second substrate; providing the reference signal by a circuit; gating a first transistor in the circuit by a charging signal; and gating a second transistor in the circuit by a control signal, wherein the first transistor is enabled based on the charging signal being above a threshold value, causing the second transistor to follow an electrical signal corresponding to the intensity to provide the reference signal.

19. The method of claim 18, wherein, The support comprises: a plurality of energy sensing pads; and a plurality of circuits electrically connected to said plurality of energy sensing pads, and wherein the exposing operation comprises: converting, via said plurality of energy sensing pads and said plurality of circuits, the intensity of the radiation source at one of said plurality of energy sensing pads into the reference signal.

20. The method of claim 18, wherein, wherein the determining operation comprises: measuring a voltage or an output frequency of the reference signal.

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