Semiconductor processing apparatus

Abstract

The application provides a semiconductor process equipment, comprising: a process chamber and a vacuum pumping device, the process chamber comprising a generating cavity, a processing cavity, a first channel and a shunt channel, the generating cavity being used for generating plasma, the processing cavity being used for carrying out etching process of a wafer, two ends of the first channel being communicated with the generating cavity and the processing cavity respectively, the processing cavity being located at the side of the first channel, two ends of the shunt channel being communicated with the first channel and the vacuum pumping device respectively; a deflection device, used for generating at least one deflection field in the first channel, so that at least part of the positively charged particles in the plasma generated in the generating cavity enter into the processing cavity, the shunt channel being used for guiding at least part of the neutral particles separated by the deflection device to the vacuum pumping device; and a focusing device, arranged in the processing cavity, used for focusing the positively charged particles entering into the processing cavity to form a charged particle beam, so as to carry out etching on the wafer through the charged particle beam, thereby realizing maskless patterning etching.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and more specifically, to a semiconductor process equipment. Background Technology

[0002] Deep silicon etching (DSE) for fabricating microstructures is widely used in integrated circuits, microelectromechanical systems (MEMS), microfluidic devices, advanced packaging, and many other fields, and is a crucial process in industrial production. Because the process of obtaining patterned microstructures using DSE involves pattern transfer, areas on the wafer that do not require etching are often masked to prevent plasma etching. Generally, photoresist can be used directly as the mask, or an etching pattern transfer technique can be used to transfer the photoresist mask onto another material to form a hard mask (e.g., using silicon oxide or silicon nitride to form a hard mask when etching silicon).

[0003] Since mask fabrication relies on photolithography, which is the most expensive process in semiconductor manufacturing, developing a maskless etching process could reduce semiconductor manufacturing costs. However, existing maskless etching processes still have many problems, such as only forming rough structures on the wafer surface and not obtaining deep trenches (or deep holes), excessively wide deep trenches (or deep holes), and the inability to obtain vertical morphologies in deep trenches (or deep holes), resulting in poor process performance and failure to obtain the required microstructures. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process apparatus.

[0005] This invention provides a semiconductor process apparatus, comprising: a process chamber and a vacuum pumping device. The process chamber includes a generation chamber, a processing chamber, a first channel, and a shunt channel. The generation chamber is used to generate plasma. The bottom of the processing chamber is connected to the vacuum pumping device. A wafer-carrying device is disposed within the processing chamber for wafer etching. The two ends of the first channel are connected to the generation chamber and the processing chamber, respectively, and the processing chamber is located beside the first channel. The two ends of the shunt channel are connected to the first channel and the vacuum pumping device, respectively. A deflection device is used to generate at least one deflection field within the first channel to allow at least a portion of the positively charged particles in the plasma generated in the generation chamber to enter the processing chamber. The shunt channel is used to guide at least a portion of the neutral particles separated by the deflection device from the plasma to the vacuum pumping device. A focusing device is disposed within the processing chamber to focus the positively charged particles entering the processing chamber to form a charged particle beam for etching the wafer.

[0006] Furthermore, the deflection device includes a first deflection device, and the diversion channel includes at least one first diversion channel. The first deflection device is used to form at least one first deflection field in the first channel, wherein one of the first deflection fields corresponds to the connection between the processing cavity and the first channel. The two ends of the first diversion channel are respectively connected to the first channel and the vacuum device. The number of first deflection fields is the same as the number of first diversion channels, and the connection between the first diversion channel and the first channel corresponds to the corresponding first deflection field.

[0007] Furthermore, the generating cavity is located beside the first channel, and the deflection device further includes: a second deflection device for forming a second deflection field in the first channel, the connection between the generating cavity and the first channel corresponding to the second deflection field; and an extraction electrode disposed in the first channel, with the second deflection field located between the generating cavity and the extraction electrode, wherein the extraction electrode is used to direct positively charged particles to the second deflection field, and the positively charged particles are deflected and move towards the first channel when passing through the second deflection field.

[0008] Furthermore, the diversion channel also includes a second diversion channel. The two ends of the second diversion channel are connected to the first channel and the vacuum pumping device, respectively. The connection between the generating chamber, the second diversion channel and the first channel corresponds to the second deflection field. Under the action of the vacuum pumping device, part of the neutral particles in the generating chamber enter the first channel and move along the first channel, while the other part enters the second diversion channel and moves along the second diversion channel.

[0009] Furthermore, the second diversion channel includes a first guide channel segment connected to the first channel, and the first channel includes a second guide channel segment that contacts the second deflection field and is located downstream therefrom, wherein the first guide channel segment and the second guide channel segment are coaxially arranged, and / or the centerline of the generating cavity is perpendicular to the second guide channel segment.

[0010] Furthermore, there is one first deflection field and one first diversion channel, with the generating cavity and the processing cavity located on opposite sides of the first channel; and / or, the first deflection field is a first magnetic field, and the second deflection field is a second magnetic field, wherein the direction of the first magnetic field is opposite to the direction of the second magnetic field.

[0011] Furthermore, the first channel is straight, and the first diversion channel includes a third guide channel segment that contacts and communicates with the first channel, wherein the first channel and the third guide channel segment are coaxially arranged, and / or the center line of the processing cavity is perpendicular to the first channel.

[0012] Furthermore, the process chamber also includes an outer cavity and an inner cavity, with a first channel, a first diversion channel and a second diversion channel formed between the outer cavity and the inner cavity. The generating chamber also includes a coil structure, a dielectric cylinder and an air intake device. The dielectric cylinder is located on the upper part of the outer cavity, the coil structure is sleeved on the outer periphery of the dielectric cylinder, and an air intake device is provided above the dielectric cylinder. The lead-out electrode is located on the upper part of the inner cavity, and the second deflection field is located between the dielectric cylinder and the lead-out electrode.

[0013] Furthermore, the bottom of the processing cavity has an opening that communicates with the vacuum pumping device. The semiconductor process equipment also includes a mounting structure and an adjustment mechanism disposed within the processing cavity. The support device is mounted within the processing cavity via the mounting structure. The mounting structure seals the opening and has multiple through holes for communicating between the processing cavity and the vacuum pumping device. The adjustment mechanism is used to adjust the flow area of ​​at least some of the through holes.

[0014] Furthermore, the adjustment mechanism includes a drive source, a transmission structure, and a baffle plate connected in sequence. The drive source is located outside the process chamber, the baffle plate is located inside the processing chamber and is used to block the through hole whose flow area needs to be adjusted, the transmission structure passes through the cavity wall of the process chamber and is dynamically sealed to the cavity wall, and the drive source can drive the baffle plate to move in a plane parallel to the mounting structure through the transmission structure, so as to change the area of ​​the corresponding through hole blocked by the baffle plate, thereby adjusting the flow area of ​​the through hole.

[0015] Furthermore, it also includes a remote plasma generator connected to the processing chamber, which is used at least for cleaning the focusing device and / or the carrier device.

[0016] Furthermore, the remote plasma generator is located beside the generating cavity, and among the multiple through holes in the mounting structure, the flow area of ​​the through hole closer to the remote plasma generator is larger than the flow area of ​​the through hole farther away from the remote plasma generator.

[0017] The present invention has the following beneficial effects:

[0018] The semiconductor process equipment provided by this invention allows plasma to move along a first channel after entering from a generation chamber. When the plasma passes through at least one deflection field, the positively charged particles in the plasma are deflected and eventually enter the processing chamber. Since neutral particles in the plasma are not affected by the deflection field, at least some of the neutral particles in the plasma move in different directions from the positively charged particles when the positively charged particles are deflected, thereby achieving separation of these neutral particles from the positively charged particles. The separated neutral particles move along a diversion channel under the action of a vacuum pump and are eventually discharged by the vacuum pump.

[0019] Ideally, only positively charged particles in the plasma would enter the processing chamber, while all neutral particles would be separated out. However, in actual processes, trace amounts of neutral particles may still enter the processing chamber for various reasons. However, since positively charged and neutral particles have already been separated at least once beforehand, the proportion of neutral particles entering the processing chamber compared to the total number of positively charged particles is small and can be ignored.

[0020] When positively charged particles enter the processing chamber, the focusing device focuses them to form a charged particle beam. This beam can be a line or a point; the areas of the wafer irradiated by the beam are etched, while areas not irradiated remain largely unetched. Therefore, by systematically sweeping the charged particle beam along a pre-defined pattern path, the wafer can be etched to obtain the desired microstructure, achieving maskless patterned etching. This not only eliminates the need for costly photolithography techniques used in mask processing, reducing semiconductor manufacturing costs, but also ensures better process results and produces products that meet requirements.

[0021] Since neutral particles are not affected by the focusing device, if too many neutral particles enter the processing cavity, the reactive free radicals within these particles will also disperse and etch the wafer, thus affecting the etching effect. Therefore, by using the above structure to separate the neutral particles at least once, only a trace amount of neutral particles will enter the processing cavity, which is insufficient to affect the etching effect, thereby further ensuring the process effect. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of a semiconductor process apparatus according to an embodiment of the present invention, wherein there is one first deflection field and a second shunt channel is provided;

[0023] Figure 2 This is a schematic diagram of a semiconductor process apparatus according to another embodiment of the present invention, wherein there is a single first deflection field and no second shunt channel is provided;

[0024] Figure 3 This is a schematic diagram of a semiconductor process apparatus according to another embodiment of the present invention, wherein there are two first deflection fields and no second shunt channel is provided;

[0025] Figure 4 A schematic diagram of the structure of a semiconductor process equipment according to an embodiment of the present invention, showing the cooperation between the adjustment mechanism of the semiconductor process equipment and the through hole of the mounting structure;

[0026] Figure 5 This is a schematic diagram of the carrier device, mounting structure, and adjustment mechanism of a semiconductor process apparatus according to an embodiment of the present invention. Detailed Implementation

[0027] To enable those skilled in the art to better understand the technical solutions of the present invention, the semiconductor process equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0028] This invention provides a semiconductor process apparatus that uses a plasma source for etching, enabling wafer etching (e.g., on a wafer) without the need for a mask. This eliminates the need for costly photolithography techniques used in mask processing, thereby reducing semiconductor manufacturing costs. Furthermore, the aforementioned semiconductor process apparatus delivers superior process performance, ensuring that the wafer etched using this apparatus achieves the desired microstructure.

[0029] like Figures 1 to 3 As shown, in some embodiments, the semiconductor process equipment includes a process chamber 10, which provides a location for etching processes. The process chamber 10 includes a plasma generation chamber 11 and a processing chamber 12. The plasma generation chamber 11 is used to generate plasma, and the processing chamber 12 is provided with a support device 30 for holding a wafer. At least some particles in the plasma enter the processing chamber 12 to perform the etching process on the wafer.

[0030] It should be noted that the method of plasma generation within generation chamber 11 is not limited. For example, in Figure 1 In the specific embodiment shown, the semiconductor process equipment generates plasma based on the principle of inductively coupled plasma (ICP). Specifically, a coil structure (e.g., wound around the outer side of the portion of the process chamber 10 corresponding to the generating cavity 11) surrounds the circumferential outer side of the generating cavity 11. The coil structure is electrically connected to a radio frequency (RF) source via a matching circuit. When the RF source is turned on, it applies the required power to the coil structure, thereby feeding RF energy into the generating cavity 11. The process chamber 10 also includes an intake device communicating with the generating cavity 11. When process gas is introduced into the generating cavity 11 through the intake device, the process gas is ionized under the action of the RF energy fed by the coil structure, thereby generating plasma. Of course, it is understood that in other embodiments, plasma can also be generated in other ways; for example, the semiconductor process equipment can also generate plasma based on the principle of capacitively coupled plasma (CCP).

[0031] Generally, the particles in the plasma can be broadly classified into charged particles and neutral particles (i.e., uncharged particles). Charged particles include positively charged particles (i.e., ions) and negatively charged particles (i.e., electrons). Negatively charged particles are easily annihilated on the cavity walls, while positively charged particles mainly serve as the particles used for etching the wafer. Neutral particles include electrically neutral molecules and / or atoms. Among them, some particles are in a high-energy excited state (i.e., in a high-energy state). These particles are called free radicals, which are reactive and can also etch the wafer.

[0032] The process chamber 10 also includes a first channel 13 and a flow distribution channel. The semiconductor process equipment also includes a vacuum pumping device 20. The bottom of the processing chamber 12 is connected to the vacuum pumping device 20. The two ends of the first channel 13 are connected to the generation chamber 11 and the processing chamber 12, respectively, and the processing chamber 12 is located beside the first channel 13. The two ends of the flow distribution channel are connected to the first channel 13 and the vacuum pumping device 20, respectively. That is, the generation chamber 11, the processing chamber 12, the first channel 13, and the flow distribution channel are all connected to the vacuum pumping device 20. The vacuum pumping device 20 can evacuate the channels and cavities connected to it, thereby providing a driving force for particles in these channels and cavities to move towards the vacuum pumping device 20.

[0033] The semiconductor process equipment also includes a deflection device (not shown in the figure). This deflection device generates at least one deflection field within the first channel 13, causing at least a portion of the positively charged particles in the plasma generated in the generating chamber 11 to enter the processing chamber 12. A diversion channel guides at least a portion of the neutral particles separated by the deflection device from the plasma to the vacuum pump 20. Since the generating chamber 11 and the processing chamber 12 are respectively connected to both ends of the first channel 13, at least one deflection field can be considered to be located between the generating chamber 11 and the processing chamber 12. The plasma in the generating chamber 11 will inevitably pass through all deflection fields as it flows towards the processing chamber 12. Specifically, when positively charged particles in the plasma pass through a deflection field, they are deflected under the influence of the deflection field, while neutral particles in the plasma, being uncharged, are not affected by the deflection field. Therefore, when positively charged particles are deflected, at least a portion of the neutral particles in the plasma will move in a different direction from the positively charged particles, thereby achieving separation between these neutral particles and the positively charged particles. The separated neutral particles move along the diversion channel under the action of the vacuum pumping device 20 and are eventually discharged by the vacuum pumping device 20.

[0034] Ideally, only positively charged particles in the plasma will enter the processing chamber 12, while all neutral particles will be separated out. However, in actual processes, a trace number of neutral particles may still enter the processing chamber 12 for various reasons. However, since positively charged particles and neutral particles have already been separated at least once beforehand, the proportion of neutral particles entering the processing chamber 12 is small compared to the total number of positively charged particles and can be ignored.

[0035] The semiconductor processing equipment also includes a focusing device 50, which is disposed within the processing cavity 12. When positively charged particles enter the processing cavity 12, the focusing device 50 can focus these positively charged particles to form a charged particle beam. The charged particle beam can be a line or a point. The areas of the wafer irradiated by the charged particle beam are etched, while the areas not irradiated by the charged particle beam are basically not etched. Therefore, by regularly sweeping the charged particle beam along a preset pattern path, the wafer can be etched, and the desired microstructure can be obtained. This achieves maskless patterned etching, which not only eliminates the need for costly photolithography technology used in mask processing and reduces semiconductor manufacturing costs, but also ensures better process results and produces products that meet the requirements.

[0036] Since neutral particles are not affected by the focusing device 50, if too many neutral particles enter the processing chamber 12, the reactive free radicals in these neutral particles will also disperse and etch the wafer, thus affecting the etching effect. Therefore, after separating the neutral particles at least once using the above structure, only a trace amount of neutral particles will enter the processing chamber 12, which is insufficient to affect the etching effect, thereby further ensuring the process effect.

[0037] like Figures 1 to 3As shown, in some embodiments, the deflection device includes a first deflection device (not shown in the figure), and the diversion channel includes at least one first diversion channel 14, the two ends of which are connected to the first channel 13 and the vacuum device 20, respectively. The first deflection device is used to form at least one first deflection field 40 in the first channel 13. Since the generating chamber 11 and the processing chamber 12 are connected to the two ends of the first channel 13, it can be considered that at least one first deflection field 40 is located between the generating chamber 11 and the processing chamber 12. The plasma in the generating chamber 11 will inevitably pass through all the first deflection fields 40 during its flow to the processing chamber 12. The number of first deflection fields 40 is not limited and can be one or more. When there are multiple first deflection fields 40, the multiple first deflection fields 40 are arranged along the extension direction of the first channel 13. Regardless of whether there is one or more first deflection fields 40, it must be ensured that one of the first deflection fields 40 corresponds to the connection point between the processing cavity 12 and the first channel 13. When there are multiple first deflection fields 40, the first deflection field 40 corresponding to the connection point between the processing cavity 12 and the first channel 13 is the most downstream first deflection field 40. Furthermore, the number of first deflection fields 40 is the same as the number of first diversion channels 14, and the connection point between the first diversion channel 14 and the first channel 13 corresponds to the corresponding first deflection field 40. When there are multiple first deflection fields 40, each of the multiple first deflection fields 40 corresponds one-to-one with the multiple first diversion channels 14, that is, the connection point between each first diversion channel 14 and the first channel 13 corresponds to the corresponding first deflection field 40.

[0038] When plasma enters the first channel 13 from the generating chamber 11, it moves along the first channel 13. When the plasma passes through at least one first deflection field 40, the positively charged particles in the plasma are deflected at least once, the specific number of deflections being the same as the number of particles passing through the first deflection field 40. Regardless of how many times the positively charged particles are deflected, since the processing chamber 12 is located beside the first channel 13, when the positively charged particles pass through the first deflection field 40 corresponding to the processing chamber 12, they can be deflected into the processing chamber 12. Since the neutral particles in the plasma are not affected by the first deflection field 40, when the positively charged particles are deflected, at least some of the neutral particles in the plasma will move in a different direction from the positively charged particles, thereby achieving the separation of these neutral particles from the positively charged particles. The separated neutral particles move along the corresponding first diversion channel 14 under the action of the vacuum pumping device 20 and are finally discharged by the vacuum pumping device 20.

[0039] If there is only one first deflection field 40, when the plasma passes through the first deflection field 40, the positively charged particles in the plasma are deflected. The deflected positively charged particles directly enter the processing chamber 12, and the separated neutral particles continue to move through the first diversion channel 14 and are finally discharged by the vacuum device 20.

[0040] If there are multiple first deflection fields 40, the plasma passes through multiple first deflection fields 40 sequentially. Each time the plasma passes through a first deflection field 40, the positively charged particles are deflected once, and at least some of the neutral particles are separated from the positively charged particles. The separated neutral particles continue to move through the first diversion channel 14 corresponding to the first deflection field 40 and are eventually discharged by the vacuum pump 20. When there is still a first deflection field 40 downstream of the plasma, the direction of movement of the positively charged particles after deflection should point to the next first deflection field 40, so as to facilitate entering the next first deflection field 40 for the next deflection. When the first deflection field 40 passed by the plasma is located at the downstream end, the positively charged particles directly enter the processing chamber 12 after deflection.

[0041] It should be noted that in the actual process, since the processing chamber 12 is connected to the vacuum pumping device 20, after the plasma passes through the first deflection field 40 corresponding to the processing chamber 12, a trace amount of neutral particles will enter the processing chamber 12 under the action of the vacuum pumping device 20. However, since the positively charged particles and neutral particles have already been separated at least once beforehand, the proportion of neutral particles entering the processing chamber 12 is small compared to the total number of positively charged particles and can be ignored. Theoretically, the more first deflection fields 40 and first diversion channels 14 there are, and the more times neutral particles are separated, the fewer neutral particles will enter the processing chamber 12. However, in actual implementation, the overall structural design of the equipment and the difficulty of manufacturing must be considered. Therefore, the number of first deflection fields 40 and first diversion channels 14 needs to be reasonably designed within the allowable range.

[0042] Additionally, to completely avoid the influence of neutral particles entering the processing cavity 12 on the etching effect, a barrier material, such as photoresist, can be spin-coated onto the wafer surface. The etching capability of the focused charged particle beam is higher than that of dispersed neutral particles. The barrier material can block the etching of neutral particles without affecting the etching of the charged particle beam, thus ensuring that etching occurs in a specific area. It should be noted that the charged particles in the plasma include positively charged particles (i.e., ions) and negatively charged particles (i.e., electrons). Theoretically, the first deflection field 40 deflects positively charged particles and negatively charged particles in opposite directions. However, since negatively charged particles are easily annihilated on the cavity wall, the particles that are ultimately used for etching are mainly positively charged particles. Therefore, when positively charged particles pass through the first deflection field 40, the deflection of negatively charged particles is negligible. Thus, it can be considered that positively charged particles are deflected in the same direction.

[0043] like Figures 1 to 3As shown, in some embodiments, the generating cavity 11 is located beside the first channel 13. The deflection device also includes a second deflection device (not shown) and an extraction electrode 90. The second deflection device is used to form a second deflection field 60 within the first channel 13, and the connection between the generating cavity 11 and the first channel 13 corresponds to the second deflection field 60. The extraction electrode 90 is disposed within the first channel 13, and the second deflection field 60 is located between the generating cavity 11 and the extraction electrode 90. After the required power is applied to the extraction electrode 90, it can attract positively charged particles in the plasma within the generating cavity 11 (i.e., the extraction electrode 90 attracts positively charged particles to move towards its own location). Positively charged particles in the plasma are drawn out of the generating chamber 11 via the extraction electrode 90 and can enter the second deflection field 60 (i.e., the extraction electrode 90 is used to orient the positively charged particles to the second deflection field 60). The positively charged particles are deflected upon passing through the second deflection field 60, and then move towards the first channel 13. Under the action of the vacuum pumping device 20, the positively charged particles move along the first channel 13 towards the first deflection field 40 downstream of the second deflection field 60. At least some neutral particles in the plasma enter the first channel 13 from the generating chamber 11 under the action of the vacuum pumping device 20 and move along the first channel 13.

[0044] The aforementioned second deflection field 60 primarily serves to change the direction of movement of positively charged particles, preventing them from directly bombarding the extraction electrode 90. This ensures that all or most of the positively charged particles can move downstream and ultimately enter the processing chamber 12 to participate in the etching process, thereby improving etching efficiency. Of course, it is understandable that in other embodiments not shown in the figure, the second deflection field 60 may not be provided. Under the action of the vacuum device 20, the positively charged particles in the plasma can also change their direction of movement after being extracted from the generation chamber 11. However, in this case, most of the positively charged particles will directly bombard the extraction electrode 90, while the remaining particles will move downstream along the first channel 13. This will affect the etching efficiency to some extent.

[0045] like Figure 1As shown, in some embodiments, the diversion channel further includes a second diversion channel 15, the two ends of which are connected to the first channel 13 and the vacuum device 20, respectively, and the connection point between the generating chamber 11, the second diversion channel 15, and the first channel 13 corresponds to the second deflection field 60. Under the action of the vacuum device 20, some of the neutral particles in the generating chamber 11 enter the first channel 13 and move along the first channel 13 with the positively charged particles. These neutral particles are then separated from the positively charged particles when passing through at least one first deflection field 40 downstream. The other part enters the second diversion channel 15 and moves along the second diversion channel 15, and is finally discharged by the vacuum device 20. This structure can separate a portion of the neutral particles before the plasma passes through the first deflection field 40, thereby further reducing the amount of neutral particles that ultimately enter the processing chamber 12.

[0046] Of course, it is understandable that in other implementations (e.g.) Figure 2 In the illustrated embodiment, the second diversion channel 15 may not be provided. All neutral particles in the generating cavity 11 move together with the positively charged particles along the first channel 13. These neutral particles are then separated from the positively charged particles at at least one subsequent first deflection field 40.

[0047] Furthermore, such as Figure 1 As shown, in some embodiments, the second diversion channel 15 includes a first guide channel section 151 that contacts and communicates with the first channel 13. The first channel 13 includes a second guide channel section 131 that contacts and is located downstream of the second deflection field 60. The first guide channel section 151 and the second guide channel section 131 are coaxially arranged. Under the action of the vacuum device 20, after the neutral particles in the generating chamber 11 exit, some will enter the second guide channel section 131 along with the positively charged particles, and the other part will enter the first guide channel section 151. Therefore, by coaxially arranging the first guide channel section 151 and the second guide channel section 131, the neutral particles entering the first guide channel section 151 move in the opposite direction to the positively charged particles, that is, the neutral particles are kept as far away from the positively charged particles as possible, which is beneficial to improving the neutral particle separation effect here. Of course, in other embodiments, the first guide channel section 151 and the second guide channel section 131 can also be arranged at an angle.

[0048] Furthermore, the centerline of the generating cavity 11 is perpendicular to the second guide channel segment 131, which facilitates manufacturing and the arrangement of various structures within the process chamber 10. Of course, it is understandable that in other embodiments, the centerline of the generating cavity 11 and the second guide channel segment 131 may also form an acute or obtuse angle. It should be noted that, depending on the positional relationship between the centerline of the generating cavity 11 and the second guide channel segment 131, the specific parameters of the second deflection field 60 need to be rationally designed to ensure a more reasonable angle of deflection for positively charged particles. This, in turn, helps to reduce losses caused by collisions between positively charged particles and the channel wall during their deflection from the generating cavity 11 to the second guide channel segment 131.

[0049] like Figure 1 and Figure 2 As shown, in some embodiments, there is only one first deflection field 40 and one first diversion channel 14. The generating cavity 11 and the processing cavity 12 are located on opposite sides of the first channel 13. In this case, the positively charged particles deflect in opposite directions when passing through the first deflection field 40 and the second deflection field 60. The above-mentioned arrangement of the generating cavity 11 and the processing cavity 12 is more convenient for layout. At the same time, the positively charged particles move in roughly the same direction in the generating cavity 11 and the processing cavity 12. For example, in actual use of the equipment, the positively charged particles in the generating cavity 11 and the processing cavity 12 move from top to bottom.

[0050] It should be noted that the specific types of the first deflection field 40 and the second deflection field 60 are not limited. For example, the first deflection field 40 and / or the second deflection field 60 can be a deflecting magnetic field, a deflecting electric field, or a combined deflection field of magnetic and electric fields. Depending on the types of the first deflection field 40 and the second deflection field 60, the types of the first deflection device and the second deflection device will also change accordingly. Similarly, the specific forms of the first deflection device and the second deflection device are not limited; they can be any device capable of providing the corresponding deflection field.

[0051] Furthermore, such as Figure 1 and Figure 2As shown, in some embodiments, the first channel 13 is straight, and the first diversion channel 14 includes a third guide channel segment 141 that contacts and communicates with the first channel 13. The first channel 13 and the third guide channel segment 141 are coaxially arranged. Under the action of the vacuum device 20, positively charged particles and neutral particles move along the first channel 13. When the positively charged particles and neutral particles pass through the first deflection field 40, the positively charged particles and at least some of the neutral particles will separate, and the separated neutral particles enter the third guide channel segment 141 to continue moving. Therefore, by coaxially arranging the first channel 13 and the third guide channel segment 141, the separated neutral particles can maintain their original direction of movement. Of course, in other embodiments, the first channel 13 and the third guide channel segment 141 can also be arranged at an angle.

[0052] Furthermore, the centerline of the processing cavity 12 is perpendicular to the first channel 13, which facilitates manufacturing and the arrangement of various structures within the process chamber 10. Of course, it is understandable that in other embodiments, the centerline of the processing cavity 12 and the first channel 13 may also be set at an acute or obtuse angle. It should be noted that, depending on the positional relationship between the centerline of the processing cavity 12 and the first channel 13, the specific parameters of the first deflection field 40 need to be rationally designed to ensure a more reasonable angle of deflection for positively charged particles. This, in turn, helps to reduce losses caused by collisions between positively charged particles and the channel wall and / or cavity wall during their deflection from the first channel 13 to the processing cavity 12.

[0053] like Figure 1 and Figure 2 As shown, in some embodiments, the first deflection field 40 is a first magnetic field, and the second deflection field 60 is a second magnetic field, wherein the direction of the first magnetic field is opposite to the direction of the second magnetic field. It should be noted that the specific structures of the first deflection device forming the first magnetic field and the second deflection device forming the second magnetic field are not limited. For example, the first deflection device (or the second deflection device) can be a permanent magnet, which can be directly embedded in the cavity wall; the first deflection device (or the second deflection device) can also be an electromagnetic coil, which can be wound around the outside of the area where the magnetic field is to be set (embedded in the cavity wall or wound around the outside of the process chamber 10). Applying direct current to the electromagnetic coil will generate the corresponding electromagnetic field.

[0054] like Figure 1 and Figure 2As shown, the deflection process of a positively charged particle is explained using the example of the first magnetic field being perpendicular to the paper and pointing outwards, and the second magnetic field being perpendicular to the paper and pointing inwards. The first channel 13 includes a second guide channel segment 131 and a first deflection field distribution segment 132 and a second deflection field distribution segment 133 located on either side of the second guide channel segment 131. The first magnetic field is located within the first deflection field distribution segment 132, and the second magnetic field is located within the second deflection field distribution segment 133. When a positively charged particle enters the second magnetic field within the second deflection field distribution segment 133, according to the left-hand rule, the positively charged particle deflects to the left of its current direction of movement, i.e., enters the second guide channel segment 131. When the positively charged particle moves along the second guide channel segment 131 to the first magnetic field within the first deflection field distribution segment 132, according to the left-hand rule, the positively charged particle deflects to the right of its current direction of movement, i.e., enters the processing cavity 12.

[0055] exist Figure 1 In the specific embodiment shown, the second diversion channel 15 further includes a first flow channel section 152, which is located downstream of and in contact with the first guide channel section 151, and is connected to it. The end of the first flow channel section 152 away from the first guide channel section 151 is connected to the vacuum pumping device 20. The first diversion channel 14 further includes a second flow channel section 142, which is located downstream of and in contact with the third guide channel section 141, and is connected to it. The end of the second flow channel section 142 away from the third guide channel section 141 is connected to the vacuum pumping device 20.

[0056] like Figure 1 As shown, the process chamber 10 further includes an outer cavity and an inner cavity, with a first channel 13, a first diversion channel 14, and a second diversion channel 15 forming between the outer cavity and the inner cavity. The generating chamber 11 further includes a coil structure, a dielectric cylinder, and an air inlet device. The dielectric cylinder is disposed on the upper part of the outer cavity, the coil structure is sleeved on the outer periphery of the dielectric cylinder, and an air inlet device is disposed above the dielectric cylinder. The internal space of the dielectric cylinder forms the generating chamber 11. The lead-out electrode 90 is disposed on the upper part of the inner cavity, and the second deflection field 60 is located between the dielectric cylinder and the lead-out electrode 90.

[0057] Positively charged particles in the generating chamber 11 are drawn out to the second magnetic field by the extraction electrode 90. According to the left-hand rule, the positively charged particles deflect to the left of the direction of movement and enter the second guide channel section 131. Under the action of the vacuum pumping device 20, some of the neutral particles in the generating chamber 11 enter the second guide channel section 131 and move along the second guide channel section 131 together with the positively charged particles. The other part enters the first guide channel section 151 and moves along the first guide channel section 151 and the first flow channel section 152, and is finally discharged by the vacuum pumping device 20.

[0058] When positively charged particles and neutral particles move along the second guide channel section 131 to the first magnetic field, according to the left-hand rule, the positively charged particles deflect to the right of their current direction of movement and enter the processing chamber 12. The vast majority of the neutral particles do not change their direction of movement and, under the action of the vacuum pump 20, enter the third guide channel section 141, moving along the third guide channel section 141 and the second flow channel section 142, and are finally discharged by the vacuum pump 20. Additionally, a trace amount of neutral particles may enter the processing chamber 12, but this is negligible.

[0059] Figure 2 The specific embodiments shown are similar to Figure 1 The main difference is that, in this embodiment, a second diversion channel 15 is not provided. All neutral particles in the generating cavity 11 move along the first channel 13 together with the positively charged particles. These neutral particles then separate from the positively charged particles at the subsequent first magnetic field. The other processes are basically the same as... Figure 1 The implementation examples are similar and will not be described again here.

[0060] exist Figure 3 In the specific embodiment shown, there are two first deflection fields 40 and two first diversion channels 14, and no second diversion channel 15 is provided. The first deflection field 40 is a first magnetic field, and the second deflection field 60 is a second magnetic field. The directions of both first magnetic fields are perpendicular to the paper and outwards, while the direction of the second magnetic field is perpendicular to the paper and inwards. Correspondingly, there are two first deflection field distribution sections 132, and the first channel 13 also includes a transition channel section 134. In the ion flow direction, the second deflection field distribution section 133, the second guiding channel section 131, the first first deflection field distribution section 132, the transition channel section 134, and the second first deflection field distribution section 132 are arranged sequentially.

[0061] Positively charged particles in the generating chamber 11 are drawn out to the second magnetic field by the extraction electrode 90. According to the left-hand rule, the positively charged particles deflect to the left of their current direction of movement and enter the second guide channel section 131. Neutral particles in the generating chamber 11, under the action of the vacuum pumping device 20, enter the second guide channel section 131 and move along the second guide channel section 131 together with the positively charged particles. When the positively charged particles and neutral particles move along the second guide channel section 131 to the first first magnetic field, according to the left-hand rule, the positively charged particles deflect to the right of their current direction of movement and enter the transition channel section 134. Some of the neutral particles do not change their direction of movement and, under the action of the vacuum pumping device 20, enter the third guide channel section 141 of the first first diversion channel 14 and move along the third guide channel section 141 and the second flow channel section 142. The other part of the neutral particles, together with the positively charged particles, enter the transition channel section 134 and move along the transition channel section 134. Next, when the positively charged particles and the neutral particles pass through the second first magnetic field, according to the left-hand rule, the positively charged particles deflect to the right of their current direction of movement and enter the processing chamber 12. Most of the neutral particles do not change their direction of movement and, under the action of the vacuum device 20, enter the third guide channel section 141 of the second first diversion channel 14 and move along the third guide channel section 141 and the second flow channel section 142. The neutral particles in both first diversion channels 14 are eventually discharged by the vacuum device 20. It should be noted that in other embodiments, if the number of the first deflection field 40 and the first diversion channels 14 is three or more, the particle motion process in the plasma is similar to the above process and will not be repeated here.

[0062] Positively charged particles entering the processing chamber 12 are focused by the focusing device 50 to form a charged particle beam (i.e., an ion beam). The specific type of the focusing device 50 is not limited; it can be any device capable of focusing positively charged particles. For example, the focusing device 50 can be an electromagnetic lens or an electrostatic lens. Taking an electromagnetic lens as an example, an electromagnetic lens mainly includes a condenser lens, a condenser lens aperture, a deflection coil, an objective lens, and an objective lens aperture. The focusing device 50 can converge positively charged particles into a small-diameter intersection point to form a charged particle beam. After passing through the deflection coil, the charged particle beam is deflected and performs a regular sweeping motion on the wafer surface, thereby achieving the purpose of etching the wafer. The main function of the condenser lens aperture and the objective lens aperture is to filter stray particles (such as stray ions) in the charged particle beam. Electromagnetic lenses are relatively mature and commonly used devices; their specific structure and working process will not be described in detail here.

[0063] It should be noted that, in order to improve the etching effect of the charged particle beam on the wafer, the charged particle beam should be ensured to etch the surface in a direction perpendicular to the wafer surface. According to the de Broglie matter wave formula λ = h / mv (where λ is the wavelength of the matter wave, h is Planck's constant, m is the mass of the matter, and v is the velocity of the matter), the above embodiments of the present invention mainly use positively charged ions to form an ion beam for etching. The corresponding matter wave wavelength is relatively short, which can avoid diffraction effects, improve pattern resolution, and significantly improve etching quality compared to electrons and photons.

[0064] like Figure 1 and Figure 2 As shown, in some embodiments, the process chamber 10 further includes a discharge channel 16, and a vacuum pumping device 20 is disposed on the discharge channel 16 and directly communicates with the discharge channel 16. Preferably, the first flow channel section 152 and the second flow channel section 142 are directly communicated with the discharge channel 16. Neutral particles in the first flow channel section 152 and the second flow channel section 142 first collect in the discharge channel 16 and then are discharged through the vacuum pumping device 20. The specific type of the vacuum pumping device 20 is not limited and can be any device capable of performing a vacuum pumping function. For example, the vacuum pumping device 20 includes, but is not limited to, mechanical pumps, molecular pumps, cold pumps, etc. Although the paths of the first diversion channel 14 and the second diversion channel 15 may be relatively long, the vacuum pumping effect can be guaranteed as long as the pumping speed of the vacuum pumping device 20 is appropriately increased.

[0065] Furthermore, such as Figure 1 and Figure 2 As shown, in some embodiments, the side of the processing cavity 12 away from the focusing device 50 (i.e., the bottom of the processing cavity 12) has an opening communicating with the vacuum device 20. For example, this opening can directly communicate with the intersection of the first flow channel section 152, the second flow channel section 142, and the discharge channel 16. The semiconductor process equipment also includes a mounting structure 70 disposed within the processing cavity 12. The mounting structure 70 seals the opening, and the carrier device 30 is mounted within the processing cavity 12 through the mounting structure 70. The mounting structure 70 has multiple through holes 71 for communicating between the processing cavity 12 and the vacuum device 20. Byproducts from the etching of the wafer by the charged particle beam can be discharged along with the gas through the through holes 71 and the vacuum device 20.

[0066] After a prolonged etching process within the processing cavity 12, some byproducts that cannot be expelled with the gas will adhere to the cavity walls, support device 30, focusing device 50, and other structures. For example, when the focusing device 50 is an electromagnetic lens, the objective aperture of the electromagnetic lens is relatively close to the wafer, making it susceptible to contamination by byproducts, thus affecting the resolution and energy of the charged particle beam. Therefore, it is necessary to periodically clean all components inside the processing cavity 12.

[0067] like Figure 1 and Figure 2 As shown, in some embodiments, the semiconductor process equipment further includes a remote plasma generator connected to the processing chamber 12. The remote plasma generator is used at least to clean the focusing device 50 and / or the carrier device 30. Preferably, the remote plasma generator can constitute an RPS (Remote Plasma Source) cleaning system. The working principle of the RPS cleaning system is as follows: Ar and NF3 are used as etching gases to ignite the microwave source or plasma source, and the gases are transported through pipelines to the processing chamber 12 to clean the components to be cleaned. The waste gas and other byproducts generated after cleaning are discharged through the through-hole 71, the discharge channel 16, and finally by the vacuum device 20.

[0068] The arrangement of the plurality of through holes 71 on the aforementioned mounting structure 70 is not limited; they can be uniformly distributed or non-uniformly distributed. Specifically, the semiconductor process equipment also includes an adjustment mechanism 80 disposed within the processing cavity 12. The adjustment mechanism 80 is used to adjust the flow area of ​​at least a portion of the through holes 71 in the mounting structure 70. By adjusting the flow area of ​​at least a portion of the through holes 71, the pressure drop rate within the processing cavity 12 can be changed, thereby regulating the amount of neutral particles entering the processing cavity 12, i.e., adjusting the ratio of neutral particles entering the processing cavity 12 to the total number of positively charged particles. For example, if the flow area of ​​at least a portion of the through holes 71 in the mounting structure 70 decreases, the amount of neutral particles entering the processing cavity 12 decreases; if the flow area of ​​at least a portion of the through holes 71 in the mounting structure 70 increases, the amount of neutral particles entering the processing cavity 12 increases.

[0069] Theoretically, if the flow area of ​​all through holes 71 in the mounting structure 70 is reduced to zero, meaning all through holes 71 in the mounting structure 70 are completely blocked, virtually no neutral particles will enter the processing chamber 12, resulting in the best etching effect. However, this would prevent the timely removal of byproducts generated during the etching process. Therefore, in practical applications, the flow area of ​​the through holes 71 in the mounting structure 70 needs to be rationally designed to balance the relationship between the amount of neutral particles entering the processing chamber 12 and the rate at which byproducts are removed from the processing chamber 12.

[0070] Preferably, in some embodiments, the remote plasma generator is located beside the processing chamber 12. Among the multiple through holes 71 of the mounting structure 70, the flow area of ​​the through hole 71 closer to the remote plasma generator is larger than that of the through hole 71 farther away from the remote plasma generator. After the remote plasma generator cleans the focusing device 50 and / or the carrying device 30, there are more byproducts located near the remote plasma generator than those located far away from it. Therefore, setting the flow area of ​​the through hole 71 closer to the remote plasma generator to be larger facilitates the smooth discharge of byproducts.

[0071] like Figure 4 and Figure 5 As shown, in some embodiments, the adjustment mechanism 80 includes a drive source, a transmission structure, and a baffle plate 83 connected in sequence. The drive source is located outside the process chamber 10, and the baffle plate 83 is located inside the processing chamber 12 and is used to block the through hole 71 whose flow area needs to be adjusted. The transmission structure passes through the cavity wall of the process chamber 10 and is dynamically sealed to the cavity wall. The drive source can drive the baffle plate 83 to move in a plane parallel to the mounting structure 70 through the transmission structure, so as to change the area of ​​the corresponding through hole 71 blocked by the baffle plate 83, thereby adjusting the flow area of ​​the through hole 71.

[0072] It should be noted that the number of baffles 83 is the same as the number of through holes 71 whose flow area needs to be adjusted, and they correspond one-to-one. The flow area of ​​the corresponding through hole 71 is changed by moving each baffle 83. When there are multiple through holes 71 whose flow area needs to be adjusted, the multiple baffles 83 can be set to move synchronously, or they can be set to move independently. Alternatively, the multiple baffles 83 can be divided into multiple groups, with each group of baffles 83 moving synchronously, or the movement of multiple groups of baffles 83 can be controlled independently.

[0073] Specifically, in Figure 4 In the specific embodiment shown, the driving source includes a driving cylinder 811 and a manual adjustment mechanism 812. The driving cylinder 811 is driven and connected to the transmission structure, and the control system is communicatively connected to the driving cylinder 811. The control system automatically controls the driving cylinder 811, causing the driving cylinder 811 to drive the baffle plate 83 to move through the transmission structure. The manual adjustment mechanism 812 is also driven and connected to the transmission structure, and manual operation of the manual adjustment mechanism 812 can drive the baffle plate 83 to move through the transmission structure.

[0074] In some embodiments, the drive cylinder 811 is fixedly mounted to the outer wall of the process chamber 10 via a cylinder fixing structure. The manual adjustment mechanism 812 is located between the drive cylinder 811 and the outer wall of the process chamber 10. A moving guide 84 is also connected between the drive cylinder 811 and the manual adjustment mechanism 812. The transmission structure includes a bellows moving structure 821 and a support member 822. The support member 822 is located inside the processing cavity 12 and is used to connect the baffle plate 83. The bellows moving structure 821 is disposed between the support member 822 and the manual adjustment mechanism 812, and a dynamic sealing connection between the transmission structure and the cavity wall of the process chamber 10 is achieved through the bellows moving structure 821.

[0075] When the extension rod of the drive cylinder 811 is activated, it can drive the movable guide 84, the manual adjustment mechanism 812, the bellows moving structure 821, the support 822, and the baffle 83 to move as a whole. During this process, the movable guide 84 can move in a certain direction along the guide limit member it cooperates with, thereby ensuring that the support 822, the baffle 83, and other structures can move horizontally in this direction. The specific structure of the manual adjustment mechanism 812 is not limited, and it can include a rotating part and a moving part. The rotating part is sleeved on the moving part and the two are connected by threads. The moving part is connected to the support 822. Rotating the rotating part can drive the moving part and the support 822 to translate.

[0076] The method of achieving dynamic sealing between the bellows moving structure 821 and the cavity wall of the process chamber 10 is also a relatively mature dynamic sealing connection method. For example, the bellows moving structure 821 includes a moving rod and a bellows sleeved on the moving rod. One end of the bellows is fixed and sealed to the moving rod, and the other end is fixed and sealed to the inner side of the cavity wall. The moving rod passes through the through hole in the cavity wall, and the two ends of the moving rod are respectively connected to the support member 822 and the manual adjustment mechanism 812.

[0077] It should be noted that the drive source is not limited to being located outside the process chamber 10. In some embodiments, the drive source can also be located inside the processing chamber 12. In this case, the adjustment mechanism 80 can be installed and fixed as a whole based on the mounting structure 70, and simultaneously fixed to the wall by positioning pins to achieve integrated installation. For example, the drive cylinder 811 is installed to the top or bottom surface of the mounting structure 70 in sequence through the cylinder fixing structure, the adapter structure, and the insulation structure. The moving guide 84 and its guide limiting member are also installed on the mounting structure 70.

[0078] The following will adopt Figure 1 Taking a specific semiconductor process equipment as an example, with the carrier device 30 being an electrostatic chuck, the etching process is described in detail below:

[0079] Step 1: Transfer the wafer into the processing chamber 12. The electrostatic chuck adsorbs the wafer. The adsorption voltage range is 100 to 10000V, preferably 2000V.

[0080] Step 2: Introduce process gas into the generating chamber 11 through the gas inlet device to stabilize the gas atmosphere in the chamber, and turn on the vacuum pump 20 to maintain a certain vacuum chamber pressure. The chamber pressure range is 1 to 1000 mTorr, preferably 100 mTorr. The type of process gas is not limited and can be selected according to the material of the wafer being etched.

[0081] Step 3: Apply power to the coil structure at the generating cavity 11 to ignite it, thereby generating plasma in the generating cavity 11. The power applied to the coil structure is in the range of 100 to 10000W, preferably 3000W.

[0082] Step 4: Apply power to the extraction electrode 90 to accelerate the plasma and extract it from the generation chamber 11. The power applied to the extraction electrode 90 is in the range of 10 to 10000W, preferably 500W.

[0083] Step 5: Based on the specific etching requirements of the wafer, the control system automatically controls the size of the through-hole 71 of the mounting structure 70, the magnetic field strength of the first magnetic field and the second magnetic field (magnetic field range of 0-10T), and the electromagnetic lens parameters, thereby achieving the separation of neutral particles in the plasma and the deflection of positively charged particles into the processing cavity 12, which forms a charged particle beam through the electromagnetic lens. The charged particle beam is focused on the wafer surface and sweeps regularly along the preset pattern path, thereby achieving wafer etching.

[0084] Step 6: After wafer etching is complete, turn off the power of lead electrode 90 and the power of coil structure at generator cavity 11.

[0085] Step 7: Stop the process gas supply, introduce Ar into the generating chamber 11, and turn on the coil structure power of the generating chamber 11 to start the ignition. At this time, the power range is 100-1000W, preferably 500W, to perform wafer desorption.

[0086] Step 8: Turn off the power of the coil structure at the generating cavity 11, stop the Ar supply, and transfer the wafer out of the processing cavity 12;

[0087] Step 9: Introduce Ar and NF3 into the remote plasma generator and use a plasma source with a frequency of, for example, 400 kHz to ignite and clean the processing chamber 12 and its internal components. The power of the plasma source is in the range of 100 to 10000 W. During this process, the chamber pressure of the processing chamber 12 is in the range of 0.1 to 10 Torr, and the cleaning time is in the range of 1 to 1000 s. After cleaning, turn off the plasma source power and stop introducing Ar and NF3. The etching process of one wafer is now complete.

[0088] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process apparatus, characterized in that, include: A process chamber and a vacuum pumping device are provided. The process chamber includes a plasma generation chamber, a processing chamber, a first channel, and a flow distribution channel. The plasma generation chamber is used to generate plasma. The bottom of the processing chamber is connected to the vacuum pumping device. A wafer-carrying device is provided inside the processing chamber for etching the wafer. The two ends of the first channel are connected to the plasma generation chamber and the processing chamber, respectively, and the processing chamber is located beside the first channel. The two ends of the flow distribution channel are connected to the first channel and the vacuum pumping device, respectively. The process chamber further includes an outer cavity and an inner cavity, with the first channel and the diversion channel forming between the outer cavity and the inner cavity; the generating cavity is connected to the outer cavity, the processing cavity is located in the inner cavity, the generating cavity is connected to the vacuum device in sequence through the first channel and the diversion channel, and the generating cavity is also connected to the processing cavity through the first channel; A deflection device is used to generate at least one deflection field in the first channel so that at least a portion of the positively charged particles in the plasma generated in the generating cavity are deflected in the first channel and enter the processing cavity. The diversion channel is used to guide at least a portion of the neutral particles separated by the deflection device from the plasma in the first channel to the vacuum device. A focusing device is disposed in the processing cavity to focus the positively charged particles entering the processing cavity to form a charged particle beam, so as to etch the wafer by means of the charged particle beam.

2. The semiconductor process equipment according to claim 1, characterized in that, The deflection device includes a first deflection device, and the diversion channel includes at least one first diversion channel. The first deflection device is used to form at least one first deflection field in the first channel, wherein one of the first deflection fields corresponds to the connection between the processing cavity and the first channel. The two ends of the first diversion channel are respectively connected to the first channel and the vacuum device. The number of first deflection fields is the same as the number of first diversion channels, and the connection between the first diversion channel and the first channel corresponds to the corresponding first deflection field.

3. The semiconductor process equipment according to claim 2, characterized in that, The generating cavity is located beside the first channel, and the deflection device further includes: The second deflection device is used to form a second deflection field in the first channel, and the connection between the generating cavity and the first channel corresponds to the second deflection field; An extraction electrode is disposed within the first channel, and the second deflection field is located between the generating cavity and the extraction electrode. The extraction electrode is used to direct the positively charged particles to the second deflection field. When the positively charged particles pass through the second deflection field, they are deflected and move towards the first channel.

4. The semiconductor process equipment according to claim 3, characterized in that, The diversion channel further includes a second diversion channel, the two ends of which are connected to the first channel and the vacuum pumping device, respectively. The connection between the generating chamber, the second diversion channel, and the first channel corresponds to the second deflection field. Under the action of the vacuum pumping device, part of the neutral particles in the generating chamber enter the first channel and move along the first channel, while the other part enters the second diversion channel and moves along the second diversion channel.

5. The semiconductor process equipment according to claim 4, characterized in that, The second diversion channel includes a first guide channel segment communicating with the first channel. The first channel includes a second guide channel segment in contact with the second deflection field and located downstream therefrom. The first guide channel segment and the second guide channel segment are coaxially arranged, and / or the centerline of the generating cavity is perpendicular to the second guide channel segment.

6. The semiconductor process equipment according to claim 4 or 5, characterized in that, Both the first deflection field and the first diversion channel are one, and the generating cavity and the processing cavity are located on opposite sides of the first channel; and / or, the first deflection field is a first magnetic field, and the second deflection field is a second magnetic field, wherein the direction of the first magnetic field is opposite to the direction of the second magnetic field.

7. The semiconductor process equipment according to claim 6, characterized in that, The first channel is straight, and the first diversion channel includes a third guide channel segment that contacts and communicates with the first channel, wherein the first channel and the third guide channel segment are coaxially arranged, and / or the center line of the processing cavity is perpendicular to the first channel.

8. The semiconductor process equipment according to claim 6, characterized in that, The outer cavity and the inner cavity form the first diversion channel and the second diversion channel. The generating cavity also includes a coil structure, a dielectric cylinder and an air intake device. The dielectric cylinder is disposed on the upper part of the outer cavity. The coil structure is sleeved on the outer periphery of the dielectric cylinder. The air intake device is disposed above the dielectric cylinder. The lead-out electrode is disposed on the upper part of the inner cavity, and the second deflection field is located between the dielectric cylinder and the lead-out electrode.

9. The semiconductor process equipment according to any one of claims 1 to 5, characterized in that, The bottom of the processing cavity has an opening communicating with the vacuum pumping device. The semiconductor process equipment also includes a mounting structure and an adjustment mechanism disposed within the processing cavity. The support device is mounted within the processing cavity via the mounting structure. The mounting structure seals the opening and has multiple through holes for communicating the processing cavity with the vacuum pumping device. The adjustment mechanism is used to adjust the flow area of ​​at least a portion of the through holes.

10. The semiconductor process equipment according to claim 9, characterized in that, The adjustment mechanism includes a drive source, a transmission structure, and a baffle plate connected in sequence. The drive source is located outside the process chamber, and the baffle plate is located inside the processing chamber and is used to block the through hole whose flow area needs to be adjusted. The transmission structure passes through the cavity wall of the process chamber and is dynamically sealed to the cavity wall. The drive source can drive the baffle plate to move in a plane parallel to the mounting structure through the transmission structure, so as to change the area of ​​the corresponding through hole blocked by the baffle plate, thereby adjusting the flow area of ​​the through hole.

11. The semiconductor process equipment according to claim 9, characterized in that, It also includes a remote plasma generator, which is connected to the processing chamber and is used at least for cleaning the focusing device and / or the carrier device.

12. The semiconductor process equipment according to claim 11, characterized in that, The remote plasma generator is located beside the generating cavity. Among the multiple through holes in the mounting structure, the flow area of ​​the through hole closer to the remote plasma generator is larger than the flow area of ​​the through hole farther away from the remote plasma generator.

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