Three-dimensional vertical interconnect ceramic leadless package and packaged device

Abstract

The application provides a three-dimensional vertical interconnection ceramic leadless packaging tube and a packaged device, and belongs to the technical field of semiconductor packaging. The packaging tube comprises a first planar ceramic substrate and a three-dimensional ceramic substrate. The three-dimensional ceramic substrate comprises a second planar ceramic substrate, a dam and a conductive column. The second planar ceramic substrate is oppositely arranged and spaced apart from the first planar ceramic substrate. The surface of the second planar ceramic substrate, which is away from the first planar ceramic substrate, is provided with a radio frequency transition pad. The dam and the conductive column are both connected between the second planar ceramic substrate and the first planar ceramic substrate. The first planar ceramic substrate, the dam and the second planar ceramic substrate jointly enclose a packaging cavity for packaging a chip. A signal transmission path of three-dimensional vertical interconnection is formed by the first planar ceramic substrate, the conductive column, the second planar ceramic substrate, the radio frequency transition pad and the chip. In this way, the three-dimensional vertical interconnection of signals is realized, and the development trend of miniaturization of tile type T / R modules can be met.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor packaging, and more specifically, relates to a three-dimensional vertically interconnected ceramic leadless packaging tube shell and a packaging device. Background Art

[0002] Ceramic leadless packages offer excellent sealing, thermal conductivity, insulation, and surface-mount packaging properties, making them widely used in electronic device packaging requiring high reliability, high environmental adaptability, and a wide operating temperature range. With the development of modern electronic information technology, the demand for miniaturization and integration of electronic devices is increasing.

[0003] Traditional ceramic packaging structures are mostly planar packaging structures, that is, the upper surface of the ceramic substrate is used to assemble the circuit, and the lower surface of the ceramic substrate is used to interconnect with the lower-layer adapter board. Therefore, the input and output ports of the functional pins can only be located on the lower surface of the ceramic substrate.

[0004] However, this planar packaging structure can only utilize a two-dimensional planar space area, and the signal transmission direction is also limited to planar transmission, which cannot meet the development trend of miniaturization of tile-type T / R components. Summary of the Invention

[0005] The purpose of the present invention is to provide a three-dimensional vertically interconnected ceramic leadless package tube and package device, aiming to solve the problem that the traditional planar packaging structure can only utilize a two-dimensional planar space area, and the signal transmission direction is also limited to planar transmission, which cannot meet the development trend of miniaturization of tile-type T / R components.

[0006] To achieve the above object, the technical solution adopted by the present invention is:

[0007] In a first aspect, the present invention provides a three-dimensional vertically interconnected ceramic leadless package tube shell, comprising a first planar ceramic substrate and a three-dimensional ceramic substrate;

[0008] The three-dimensional ceramic substrate includes a second planar ceramic substrate, a dam, and a conductive pillar. The second planar ceramic substrate is opposite to and spaced from the first planar ceramic substrate. A radio frequency transition pad is provided on the surface of the second planar ceramic substrate facing away from the first planar ceramic substrate. The dam and the conductive pillar are connected between the second planar ceramic substrate and the first planar ceramic substrate. The first planar ceramic substrate, the dam, and the second planar ceramic substrate together form a packaging cavity for packaging a chip.

[0009] A three-dimensional vertically interconnected signal transmission path is formed by the first planar ceramic substrate, the conductive pillar, the second planar ceramic substrate, the radio frequency transition pad, and the chip.

[0010] In one possible implementation, the first planar ceramic substrate is provided with a first pin pad and a second pin pad on two opposite surfaces, respectively, a first signal transition hole penetrating the first planar ceramic substrate is provided between the first pin pad and the second pin pad, and the second pin pad is connected to the conductive column.

[0011] In one possible implementation, the second planar ceramic substrate is provided with a third pin pad, a fourth pin pad, and a fifth pin pad at intervals on a surface facing the first planar ceramic substrate, and the second planar ceramic substrate is provided with a sixth pin pad spaced apart from the RF transition pad on a surface facing away from the first planar ceramic substrate, and the conductive column is connected between the first planar ceramic substrate and the third pin pad.

[0012] A second signal transition hole penetrating the second planar ceramic substrate is provided between the third pin pad and the RF transition pad, a third signal transition hole penetrating the second planar ceramic substrate is provided between the fourth pin pad and the RF transition pad, and a fourth signal transition hole penetrating the second planar ceramic substrate is provided between the fifth pin pad and the sixth pin pad;

[0013] The first planar ceramic substrate, the conductive column, the third pin pad, the second signal transition hole, the RF transition pad, the third signal transition hole, the fourth pin pad, the chip, the fifth pin pad, the fourth signal transition hole, and the sixth pin pad constitute a three-dimensional vertically interconnected signal transmission path.

[0014] In a possible implementation, the package shell further includes a signal solder ball connected to the sixth pin pad, and the signal solder ball is located outside the package cavity.

[0015] In a possible implementation, the second planar ceramic substrate further includes a ground transition hole extending through the thickness thereof, and a ground pad connected to the ground transition hole is provided on a surface of the second planar ceramic substrate facing away from the first planar ceramic substrate.

[0016] In a possible implementation, the package shell further includes a grounding solder ball connected to the grounding pad, and the grounding solder ball is located outside the package cavity.

[0017] In a possible implementation, the second signal transition hole and the ground transition hole form a quasi-coaxial structure.

[0018] In a possible implementation, the dam has a receiving cavity, the conductive column is disposed in the receiving cavity, and a gap is provided between the conductive column and an inner wall of the receiving cavity.

[0019] In a possible implementation, the conductive pillar and the dam form a quasi-coaxial structure.

[0020] The three-dimensional vertically interconnected ceramic leadless package shell provided by the present invention has at least the following technical effects: compared with traditional technologies, the three-dimensional vertically interconnected ceramic leadless package shell provided by the present invention, the three-dimensional ceramic substrate includes a second planar ceramic substrate, a conductive column and a dam, the signal can be interconnected with the first planar ceramic substrate and the second planar ceramic substrate through the conductive column, and interconnected with the chip through the radio frequency transition pad, thereby realizing three-dimensional vertical interconnection of the signal, making full use of the three-dimensional space, no longer limited to planar transmission, and can meet the development trend of miniaturization of tile-type T / R components.

[0021] In a second aspect, the present invention further provides a packaging device, comprising:

[0022] A three-dimensional vertically interconnected ceramic leadless package as described in any of the above implementations; a chip disposed on the second planar ceramic substrate; and a bonding wire connected between the chip and the second planar ceramic substrate.

[0023] The packaged device provided by the present invention includes the three-dimensional vertically interconnected ceramic leadless package tube shell as described in any of the above implementations. The technical effects of the two are the same and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0025] Figure 1 A schematic structural diagram of a three-dimensional vertically interconnected ceramic leadless package shell provided by an embodiment of the present invention;

[0026] Figure 2 A schematic structural diagram of a packaging device provided in one embodiment of the present invention.

[0027] Description of reference numerals:

[0028] 1. Package shell 100, first planar ceramic substrate 110, first pin pad

[0029] 120, second pin pad 130, first signal transition hole 200, three-dimensional ceramic substrate

[0030] 210, second planar ceramic substrate 211, RF transition pad 212, third pin pad

[0031] 213, fourth pin pad 214, fifth pin pad 215, sixth pin pad

[0032] 216, second signal transition hole 217, third signal transition hole 218, fourth signal transition hole

[0033] 219, grounding transition hole 220, dam 230, conductive column

[0034] 300, signal solder ball 400, ground solder ball 2, packaged device

[0035] 500, chip 600, first bonding wire 700, second bonding wire DETAILED DESCRIPTION

[0036] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0037] It should be noted that when an element is considered to be "connected to" or "connected to" another element, it can be directly connected to the other element or there may be an intermediate element at the same time. In addition, in the semiconductor field, the "connection" that appears in this article can specifically correspond to electrical connection, signal connection, or mechanical connection, depending on the application scenario. When an element is referred to as being "disposed on," "set on," or "fixed on" another element, it can be directly on the other element or there may be an intermediate element. "Multiple" refers to two or more.

[0038] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0039] See also Figure 1 and Figure 2 , the three-dimensional vertical interconnected ceramic leadless package tube shell 1 and the packaged device 2 provided in the embodiment of the present invention are now described.

[0040] See also Figure 1 and Figure 2An embodiment of the present invention provides a three-dimensional vertically interconnected ceramic leadless package 1, comprising a first planar ceramic substrate 100 and a three-dimensional ceramic substrate 200; wherein the three-dimensional ceramic substrate 200 comprises a second planar ceramic substrate 210, a dam 220, and a conductive pillar 230. The second planar ceramic substrate 210 is opposed to and spaced apart from the first planar ceramic substrate 100. A radio frequency transition pad 211 is provided on a surface of the second planar ceramic substrate 210 facing away from the first planar ceramic substrate 100. The dam 220 and the conductive pillar 230 are both connected between the second planar ceramic substrate 210 and the first planar ceramic substrate 100. The first planar ceramic substrate 100, the dam 220, and the second planar ceramic substrate 210 together enclose a packaging cavity for packaging a chip 500. A three-dimensional vertically interconnected signal transmission path is formed by the first planar ceramic substrate 100, the conductive pillar 230, the second planar ceramic substrate 210, the radio frequency transition pad 211, and the chip 500.

[0041] Specifically, the first planar ceramic substrate 100 and the second planar ceramic substrate 210 can be made of materials such as Al2O3 and AlN. The first planar ceramic substrate 100 can be soldered to the dam 220 and the conductive pillars 230 by gold-tin solder, and the second planar ceramic substrate 210, the dam 220 and the conductive pillars 230 are formed into an integrated structure by electroplating. The dam 220 and the conductive pillars 230 can be made of conductive materials such as copper and gold. The dam 220 is arranged in a surrounding manner and can be used together with the first planar ceramic substrate 100 and the second planar ceramic substrate 210 to form a closed packaging cavity. The conductive pillars 230 are arranged in the packaging cavity, or the conductive pillars 230 can be arranged inside the dam 220. The packaging cavity itself has cavity resonance, which can achieve isolation of radio frequency signals. The chip 500 can be arranged in the packaging cavity by bonding, ball planting, or flip-chip.

[0042] The purpose of three-dimensional multilayer stacking is achieved through the first planar ceramic substrate 100, the conductive pillars 230, the dam 220, and the second planar ceramic substrate 210, which can realize vertical interconnection of signals, further reduce the area of ​​the package shell 1, and reduce the size of the packaged product.

[0043] It is understandable that the signal can be transmitted from the first planar ceramic substrate 100 to the second planar ceramic substrate 210, or from the second planar ceramic substrate 210 to the first planar ceramic substrate 100, or can be transmitted back and forth between the first planar ceramic substrate 100 and the second planar ceramic substrate 210. In this case, the number and position of the conductive pillars 230 and the RF transition pads 211 need to be adjusted, and there is no limitation on this.

[0044] In addition, the number and position of the conductive pillars 230 and the RF transition pads 211 may be adjusted to correspond to different numbers and positions of signal transmission paths, which is not limited to the embodiments of this document.

[0045] The three-dimensional vertically interconnected ceramic leadless package shell 1 provided by the embodiment of the present invention has at least the following technical effects: compared with the traditional technology, the three-dimensional vertically interconnected ceramic leadless package shell 1 provided by the embodiment of the present invention, the three-dimensional ceramic substrate 200 includes a second planar ceramic substrate 210, a conductive column 230 and a dam 220. The signal can be interconnected between the first planar ceramic substrate 100 and the second planar ceramic substrate 210 through the conductive column 230, and interconnected with the chip 500 through the RF transition pad 211, thereby realizing three-dimensional vertical interconnection of the signal, making full use of the three-dimensional space, no longer limited to planar transmission, and meeting the development trend of miniaturization of tile-type T / R components.

[0046] See also Figure 1 In some possible embodiments, the first planar ceramic substrate 100 is provided with a first pin pad 110 and a second pin pad 120 on two opposite surfaces, respectively. A first signal transition hole 130 is provided between the first pin pad 110 and the second pin pad 120, which passes through the first planar ceramic substrate 100, and the second pin pad 120 is connected to the conductive column 230.

[0047] Specifically, the first pin pad 110 can serve as a signal input or output terminal, transmitting signals through the first signal transition hole 130. The second pin pad 120 and the conductive pillar 230 can be soldered together using gold-tin solder. The first pin pad 110 and the second pin pad 120 can be prepared using an electroplating process. This allows for signal transmission. The first signal transition hole 130 can be a vertical hole, or it can be tilted at a certain angle relative to the first planar ceramic substrate 100.

[0048] Based on or not based on the first pin pad 110 and the second pin pad 120, please refer to Figure 1 and Figure 2 In some possible embodiments, the second planar ceramic substrate 210 is provided with a third pin pad 212, a fourth pin pad 213, and a fifth pin pad 214 at intervals on the surface facing the first planar ceramic substrate 100. The second planar ceramic substrate 210 is provided with a sixth pin pad 215 spaced apart from the RF transition pad 211 on the surface facing away from the first planar ceramic substrate 100. The conductive pillar 230 is connected between the first planar ceramic substrate 100 and the third pin pad 212.

[0049] A second signal transition hole 216 penetrating the second planar ceramic substrate 210 is provided between the third pin pad 212 and the RF transition pad 211, a third signal transition hole 217 penetrating the second planar ceramic substrate 210 is provided between the fourth pin pad 213 and the RF transition pad 211, and a fourth signal transition hole 218 penetrating the second planar ceramic substrate 210 is provided between the fifth pin pad 214 and the sixth pin pad 215.

[0050] The first planar ceramic substrate 100, the conductive pillar 230, the third pin pad 212, the second signal transition hole 216, the RF transition pad 211, the third signal transition hole 217, the fourth pin pad 213, the chip 500, the fifth pin pad 214, the fourth signal transition hole 218, and the sixth pin pad 215 constitute a three-dimensional vertically interconnected signal transmission path, with no restriction on the transmission direction.

[0051] It is understood that the second signal transition hole 216, the third signal transition hole 217, and the fourth signal transition hole 218 can all be vertical holes, or, of course, can be inclined at a certain angle relative to the second planar ceramic substrate 210. The second signal transition hole 216 and the third signal transition hole 217 are arranged adjacent to each other so as to simultaneously connect to the RF transition pad 211, thereby achieving a connection with the chip 500. The third pin pad 212, the fourth pin pad 213, the fifth pin pad 214, the sixth pin pad 215, and the RF transition pad 211 can all be prepared using an electroplating process.

[0052] Of course, in other embodiments, different signal transition holes and pin pads may be provided, without limitation, as long as the interconnection between the first planar ceramic substrate 100 and the second planar ceramic substrate 210 is achieved. For example, two sets of conductive pillars 230 and RF transition pads 211 may be configured in different locations to achieve two sets of signal transmission. Of course, other numbers are also possible, such as three, four, or five groups.

[0053] Based on the above signal transition holes and pin pads, please refer to Figure 1 In some embodiments, package 1 further includes a signal solder ball 300 connected to sixth pin pad 215, with signal solder ball 300 located outside the package cavity. Specifically, sixth pin pad 215 can function as a signal input or output terminal. Signal solder ball 300 can enhance the immediacy of signal transmission, reduce signal transmission latency, and improve electrical and thermal performance.

[0054] Based on the above signal transition holes and pin pads, please refer to Figure 1In some embodiments, the second planar ceramic substrate 210 further comprises ground transition holes 219 penetrating through the thickness direction thereof, and the surface of the second planar ceramic substrate 210 away from the first planar ceramic substrate 100 is provided with ground pads connected with the ground transition holes 219. Specifically, the second planar ceramic substrate 210 can be provided with one or more ground pads, each of which can correspond to one or more ground transition holes 219 to realize the ground of the overall structure.

[0055] Based on the above-mentioned ground pads, please refer to Figure 1 In some embodiments, the package casing 1 further comprises ground solder balls 400 connected with the ground pads, and the ground solder balls 400 are located outside the package cavity. Specifically, each ground pad can correspond to one or more ground solder balls 400, and the electrical heating performance can be improved, the assembly yield of the finished product can be improved, and the overall volume and weight can be reduced through the ground solder balls 400.

[0056] Based on the above-mentioned signal transition holes and pin pads, in some embodiments, the second signal transition hole 216 and the ground transition hole 219 form a coaxial-like structure. It can be understood that in the semiconductor field, the meaning of the coaxial-like structure is to use an inner conductor and an outer conductor arranged in a coaxial-like manner. In this way, the characteristic impedance can be kept constant, and the stable transmission of the signal can be realized.

[0057] Please refer to Figure 1 In some possible embodiments, the dam 220 has a receiving cavity, and the conductive column 230 is arranged in the receiving cavity and is arranged in a gap with the inner wall of the receiving cavity. Specifically, in the stacking direction of the first planar ceramic substrate 100 and the second planar ceramic substrate 210, the dam 220 has a receiving cavity with two open ends, the conductive column 230 is arranged in the receiving cavity, and the two ends of the conductive column 230 are connected with the first planar ceramic substrate 100 and the second planar ceramic substrate 210, respectively.

[0058] Based on the above-mentioned arrangement mode of the conductive column 230, in some embodiments, the conductive column 230 and the dam 220 form a coaxial-like structure. It can be understood that in the semiconductor field, the meaning of the coaxial-like structure is to use an inner conductor and an outer conductor arranged in a coaxial-like manner. In this way, the characteristic impedance can be kept constant, and the stable transmission of the signal can be realized.

[0059] Based on the same inventive concept, please refer to Figure 2 The embodiment of the present application further provides a packaged device 2, comprising: the three-dimensional vertical interconnection ceramic leadless package casing 1 according to any one of the above embodiments; a chip 500 arranged on the second planar ceramic substrate 210; and a bonding wire connected between the chip 500 and the second planar ceramic substrate 210.

[0060] In combination with the above embodiments, the bonding wires include at least a first bonding wire 600 and a second bonding wire 700, the first bonding wire 600 is connected between the chip 500 and the fourth pin pad 213, and the second bonding wire 700 is connected between the chip 500 and the fifth pin pad 214.

[0061] For a group of signals, the first pin pad 110, the first signal transition hole 130, the second pin pad 120, the conductive column 230, the third pin pad 212, the second signal transition hole 216, the radio frequency transition pad 211, the third signal transition hole 217, the fourth pin pad 213, the first bonding wire 600, the chip 500, the second bonding wire 700, the fifth pin pad 214, the fourth signal transition hole 218, the sixth pin pad 215, and the signal solder ball 300 can form a signal transmission path, and the signal direction can be from the first pin pad 110 to the signal solder ball 300, or from the signal solder ball 300 to the first pin pad 110.

[0062] For a plurality of groups of signals, the positions and quantities of the conductive column 230, the pin pad, the radio frequency transition pad 211, the bonding wire, and the like can be adjusted adaptively.

[0063] The packaging device 2 provided by the embodiments of the present application includes the three-dimensional vertical interconnection ceramic leadless packaging tube 1 described in any of the above embodiments, and both have the same technical effects, which will not be described here.

[0064] It can be understood that the parts in the above embodiments can be freely combined or deleted to form different combined embodiments, and the specific content of each combined embodiment will not be described here. After the description, it can be considered that the present application has described each combined embodiment in the specification, and can support different combined embodiments.

[0065] The above only describes the preferred embodiments of the present application and does not limit the present application. Any modification, equivalent replacement and improvement within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A three-dimensional vertically interconnected ceramic leadless package, characterized in that: including a first planar ceramic substrate and a three-dimensional ceramic substrate; The three-dimensional ceramic substrate includes a second planar ceramic substrate, a dam, and a conductive pillar. The second planar ceramic substrate is opposite to and spaced from the first planar ceramic substrate. A radio frequency transition pad is provided on the surface of the second planar ceramic substrate facing away from the first planar ceramic substrate. The dam and the conductive pillar are connected between the second planar ceramic substrate and the first planar ceramic substrate. The first planar ceramic substrate, the dam, and the second planar ceramic substrate together form a packaging cavity for packaging a chip. A three-dimensional vertically interconnected signal transmission path is formed by the first planar ceramic substrate, the conductive pillar, the second planar ceramic substrate, the RF transition pad, and the chip; The chip is arranged on the second planar ceramic substrate; The dam has a receiving cavity, the conductive column is arranged in the receiving cavity and is spaced apart from the inner wall of the receiving cavity; the conductive column and the dam form a quasi-coaxial structure; The second planar ceramic substrate is provided with a third pin pad, a fourth pin pad, and a fifth pin pad at intervals on a surface facing the first planar ceramic substrate. The second planar ceramic substrate is provided with a sixth pin pad spaced apart from the RF transition pad on a surface facing away from the first planar ceramic substrate. The conductive column is connected between the first planar ceramic substrate and the third pin pad. A second signal transition hole penetrating the second planar ceramic substrate is provided between the third pin pad and the RF transition pad, a third signal transition hole penetrating the second planar ceramic substrate is provided between the fourth pin pad and the RF transition pad, and a fourth signal transition hole penetrating the second planar ceramic substrate is provided between the fifth pin pad and the sixth pin pad; The first planar ceramic substrate, the conductive column, the third pin pad, the second signal transition hole, the RF transition pad, the third signal transition hole, the fourth pin pad, the chip, the fifth pin pad, the fourth signal transition hole, and the sixth pin pad constitute a three-dimensional vertically interconnected signal transmission path.

2. The package according to claim 1, wherein: The first planar ceramic substrate is provided with a first pin pad and a second pin pad on two opposite surfaces respectively. A first signal transition hole penetrating the first planar ceramic substrate is provided between the first pin pad and the second pin pad. The second pin pad is connected to the conductive column.

3. The package according to claim 1, wherein: It also includes a signal solder ball connected to the sixth pin pad, and the signal solder ball is located outside the packaging cavity.

4. The package according to claim 1, wherein: The second planar ceramic substrate further includes a grounding transition hole extending through the second planar ceramic substrate in its thickness direction. A grounding pad connected to the grounding transition hole is provided on a surface of the second planar ceramic substrate facing away from the first planar ceramic substrate.

5. The package according to claim 4, wherein: A ground solder ball connected to the ground pad is also included, and the ground solder ball is located outside the packaging cavity.

6. The package according to claim 4, wherein: The second signal transition hole and the ground transition hole form a quasi-coaxial structure.

7. A packaged device, characterized in that include: The three-dimensional vertically interconnected ceramic leadless package according to any one of claims 1 to 6; A chip is provided on the second planar ceramic substrate; as well as A gold bonding wire is connected between the chip and the second planar ceramic substrate.

Images