Chip-integrated electro-optical signal conversion method based on two-dimensional layered material films

Abstract

The present invention discloses a chip-integrated electro-optical signal conversion method based on a two-dimensional layered material film. The two-dimensional layered material film is applied to the surface of a chip-integrated waveguide, and a modulation voltage is applied to the two-dimensional layered material film. By varying the free carrier concentration and adjusting the refractive index of the chip-integrated waveguide, the electro-optical phase modulation of the transmitted light field is achieved, effectively converting electrical signals into optical signals. Furthermore, the transmitted light field causes a change in the free carrier concentration of the two-dimensional layered material film, and by detecting the conductivity, efficient conversion of optical signals into electrical signals is achieved. The present invention avoids waveguide breakdown caused by excessively high modulation voltages through the thin film structure, and boasts a simple preparation process and high conversion speed. This method can lay a solid technical foundation for chip-integrated optoelectronic systems, particularly microwave photonic systems.

Description

Technical Field

[0001] The present invention belongs to the interdisciplinary field of integrated optics, semiconductor physics and microwave photonics. Specifically, it refers to a method for converting electrical signals into optical signals by adjusting the refractive index of a chip-integrated waveguide by changing the free carrier concentration generated by a two-dimensional layered material film under the action of an external voltage, and by adjusting the conductivity of the film by changing the free carrier concentration generated by the two-dimensional layered material film under the action of a light field. In particular, it relates to a chip-integrated electro-optical signal conversion method, system and storage medium based on a two-dimensional layered material film. Background Art

[0002] Chip-integrated optical circuits offer advantages such as small size, low power consumption, stable performance, and high integration. They are particularly suitable as an alternative to traditional discrete free-space and all-fiber optical circuits for building large-scale, complex, and component-intensive optical systems, such as optical communication systems, optical computing systems, optical phased arrays, and microwave photonic signal processing systems. In particular, chip-integrated optical circuits, exemplified by silicon-on-insulator (SOI), are highly compatible with traditional integrated circuit processes, making it possible to construct chip-scale optoelectronic hybrid systems. Chip-integrated optoelectronic systems consist of a series of passive and active components: passive components primarily include optoelectronic directional couplers, optical beam splitters, polarization beam splitters, and wavelength division multiplexers, while active components primarily include light sources, detectors, optical modulators, tunable filters, and tunable attenuators. Passive components primarily involve light field transmission, while active components provide external interfaces for light field control.

[0003] As an important active device, optical modulators play a vital role in applications such as all-optical signal encoding and decoding, optical interference, and optical switches. In particular, the electro-optical signal conversion achieved by electro-optical modulators is an important bridge connecting the electrical and optical domains in microwave photonic systems. Chip-integrated electro-optical modulators are divided into two categories. One is based on a lithium niobate waveguide platform and realizes electro-optical modulation through optical nonlinear effects. The other is based on a PIN structure semiconductor waveguide platform and realizes modulation through free carrier-induced refractive index changes. The preparation process of electro-optical modulators based on semiconductor waveguide platforms is more mature, but the PIN structure requires a separate ion implantation process and is easily broken down under higher modulation voltages. Summary of the Invention

[0004] Based on the problems of the existing technology, the technical problem to be solved by the present invention is how to cover a two-dimensional layered material film on the surface of a transmission waveguide and grow an external electrode; load a modulation voltage on the two-dimensional layered material film, and adjust the refractive index of the chip integrated waveguide by changing the free carrier concentration to achieve electro-optical phase modulation of the transmitted light field, that is, to achieve efficient conversion of electrical signals to optical signals; measure the change in conductivity of the two-dimensional layered material film by an external electrode, so as to detect the change in the intensity of the transmitted light field and achieve efficient conversion of optical signals to electrical signals.

[0005] In order to achieve the above effects, the present invention provides a chip integrated electro-optical signal conversion method based on a two-dimensional layered material film, comprising the following steps:

[0006] Step 1: Convert electrical signals into optical signals. The electrical signals are loaded onto a two-dimensional layered material film through external electrodes. By changing the free carrier concentration, the refractive index of the chip's integrated waveguide is adjusted to achieve electro-optical phase modulation of the transmitted light field. The phase or intensity of the transmitted light field will replicate the electrical signal.

[0007] Step 2: Convert the optical signal into an electrical signal. The transmitted light field drives the photoelectric effect of the two-dimensional layered material film and changes the free carrier concentration. The change in the film's conductivity can be measured by an external electrode, replicating the optical signal carried by the transmitted light field.

[0008] Preferably, the method specifically includes:

[0009] S101. Prepare the transmission waveguide required for the electro-optic modulator, optimize the cross-sectional structure to ensure low transmission loss and sensitive changes in the waveguide refractive index, optimize the waveguide length to achieve a balance between low transmission loss and large modulation depth, and optimize the spatial arrangement of the waveguide to ensure the most accurate coverage of the two-dimensional layered material film;

[0010] S102, transferring the two-dimensional layered material film to the waveguide surface without loss, and optimizing the film thickness to maximize the free carrier concentration per unit voltage and unit optical field intensity and minimize the dissipation time;

[0011] S103. The electrical signal is converted into an optical signal in the order of external voltage, free carrier concentration, waveguide refractive index, transmitted light field phase, and other optical degrees of freedom. The optical signal is converted into an electrical signal in the order of evanescent light field, photogenerated free carriers, and conductivity.

[0012] Preferably, the transmission waveguide used for optical-electrical signal conversion in S101 should guide the light field to the two-dimensional layered material film as much as possible with low transmission loss.

[0013] Preferably, the S102 film can be closely attached to the upper surface and side surfaces of the waveguide and only to the upper surface.

[0014] Preferably, S102 transfers the two-dimensional layered material film to the waveguide surface non-destructively by chemical vapor deposition.

[0015] Preferably, the free carrier concentration change generated by the two-dimensional layered material film under the action of an external voltage is used to adjust the refractive index of the chip integrated waveguide to realize the conversion of electrical signals into optical signals, and the free carrier concentration change generated by the two-dimensional layered material film under the action of a light field is used to adjust the film conductivity and realize the conversion of optical signals into electrical signals.

[0016] Preferably, when the electrical signal is converted into an optical signal, the external voltage changes the free carrier concentration of the two-dimensional layered material film, and the refractive index of the chip integrated waveguide covered by the film changes and affects the phase distribution of the transmitted light field.

[0017] Preferably, when the optical signal is converted into an electrical signal, the transmitted light field carrying the optical signal enters the two-dimensional layered material film through evanescent wave coupling, generates free carriers through the photoelectric effect and changes the electrical properties of the film, and obtains the electrical signal by detecting the change in electrical properties through external electrodes.

[0018] A system for implementing the above-mentioned chip-integrated electro-optical signal conversion method based on a two-dimensional layered material film, comprising:

[0019] Chip-integrated electro-optic modulator, where the passive part mainly consists of a silicon dioxide substrate and a silicon-based waveguide;

[0020] The electro-optical signal conversion module loads the electrical signal onto a two-dimensional layered material film through external electrodes. By changing the free carrier concentration, the refractive index of the chip's integrated waveguide is adjusted to achieve electro-optical phase modulation of the transmitted light field. At this time, the phase or intensity of the transmitted light field (requiring a structure such as an interferometer) will replicate the electrical signal.

[0021] The optical-to-electrical signal conversion module uses the transmitted light field to drive the photoelectric effect of the two-dimensional layered material film and change the free carrier concentration. The change in the film's conductivity can then be measured by an external electrode, replicating the optical signal carried by the transmitted light field.

[0022] The chip-integrated electro-optic modulator transmits a light field radially along a silicon-based waveguide, the upper surface of which is covered with a molybdenum disulfide film. External electrodes are grown on the surface of the molybdenum disulfide film and are located on opposite sides of the cross-section of the silicon-based waveguide. A bias voltage can be applied to the molybdenum disulfide film via the external electrodes, causing a change in the free carrier concentration and a change in the refractive index of the silicon-based waveguide, thereby changing the phase distribution of the transmitted light field. The transmitted light field is evanescently coupled into the molybdenum disulfide film and induces a photoelectric effect, causing a change in the free carrier concentration. The change in the conductivity of the molybdenum disulfide film can be detected via the external electrodes, thereby indirectly obtaining information about the transmitted light field.

[0023] The principle of electro-optical signal conversion integrated in the chip is as follows: an incident laser pulse is divided into two paths by an optical beam splitter, one of which is a waveguide covered with a two-dimensional layered material film; an electrical signal is loaded onto the surface of the two-dimensional layered material film in the form of a modulated voltage through an external electrode, generating free carriers that cause a change in the refractive index and causing the phase distribution of the laser pulse in this waveguide to replicate the electrical signal; the two laser pulses interfere and generate an optical signal whose intensity distribution replicates the electrical signal, completing the conversion of the electrical signal to the optical signal; the laser pulse carrying the optical signal passes through a waveguide covered with a two-dimensional layered material film, and the photogenerated free carriers will change the conductivity of the film. The replicated laser pulse intensity distribution is tested by a conductivity testing device, completing the conversion of the optical signal to the electrical signal.

[0024] A computer-readable storage medium stores a computer program, which implements the above method when executed by a processor.

[0025] Compared with the existing technology, the two-dimensional layered material film of the present invention can not only improve the efficiency of electro-optical modulation and conductivity detection, but also better prevent waveguide breakdown caused by excessive modulation voltage, providing an important means for interconnection between the electrical and optical domains of chip-integrated microwave photonic systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0027] Figure 1 The schematic diagram of the structure of the chip-integrated electro-optic modulator based on molybdenum disulfide thin film of the present invention is shown;

[0028] Figure 2 The schematic diagram of the electro-optical signal conversion principle of the chip integration of the present invention is shown. DETAILED DESCRIPTION

[0029] The features and exemplary embodiments of various aspects of the present invention will be described in detail below. In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below in conjunction with the accompanying drawings and Examples. It should be understood that the specific embodiments described herein are only configured to explain the present invention and are not configured to limit the present invention. For those skilled in the art, the present invention can be implemented without the need for some of these specific details. The following description of the embodiments is merely to provide a better understanding of the present invention by illustrating examples of the present invention.

[0030] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, the elements defined by the phrase "comprising..." do not exclude the presence of other identical elements in the process, method, article, or device comprising the elements.

[0031] The present invention provides an embodiment of a chip-integrated electro-optical signal conversion method based on a two-dimensional layered material film, comprising the following steps:

[0032] Step 1: Convert electrical signals into optical signals. The electrical signals are loaded onto a two-dimensional layered material film through external electrodes. By changing the free carrier concentration, the refractive index of the chip's integrated waveguide is adjusted to achieve electro-optical phase modulation of the transmitted light field. The phase or intensity of the transmitted light field will replicate the electrical signal.

[0033] Step 2: Convert the optical signal into an electrical signal. The transmitted light field drives the photoelectric effect of the two-dimensional layered material film and changes the free carrier concentration. The change in the film's conductivity can be measured by an external electrode, replicating the optical signal carried by the transmitted light field.

[0034] In some embodiments, the method specifically includes:

[0035] S101. Prepare the transmission waveguide required for the electro-optic modulator, optimize the cross-sectional structure to ensure low transmission loss and sensitive changes in the waveguide refractive index, optimize the waveguide length to achieve a balance between low transmission loss and large modulation depth, and optimize the spatial arrangement of the waveguide to ensure the most accurate coverage of the two-dimensional layered material film;

[0036] S102, transferring the two-dimensional layered material film to the waveguide surface without loss, and optimizing the film thickness to maximize the free carrier concentration per unit voltage and unit optical field intensity and minimize the dissipation time;

[0037] S103. The electrical signal is converted into an optical signal in the order of external voltage, free carrier concentration, waveguide refractive index, transmitted light field phase, and other optical degrees of freedom. The optical signal is converted into an electrical signal in the order of evanescent light field, photogenerated free carriers, and conductivity.

[0038] In some embodiments, the transmission waveguide used for optical-to-electrical signal conversion in S101 should guide the light field to a two-dimensional layered material film as much as possible while having low transmission loss.

[0039] In some embodiments, the S102 film may be closely attached to the upper surface and side surfaces of the waveguide or only to the upper surface.

[0040] In some embodiments, S102 non-destructively transfers a two-dimensional layered material film to a waveguide surface by chemical vapor deposition.

[0041] In some embodiments, the free carrier concentration change generated by the two-dimensional layered material film under the action of an external voltage is used to adjust the refractive index of the chip integrated waveguide to achieve conversion of electrical signals into optical signals. The free carrier concentration change generated by the two-dimensional layered material film under the action of a light field is used to adjust the film conductivity and achieve conversion of optical signals into electrical signals.

[0042] In some embodiments, when an electrical signal is converted into an optical signal, an external voltage changes the free carrier concentration of a two-dimensional layered material film, and the refractive index of the chip integrated waveguide covered by the film changes and affects the phase distribution of the transmitted light field.

[0043] In some embodiments, when an optical signal is converted into an electrical signal, the transmitted light field carrying the optical signal enters the two-dimensional layered material film through evanescent wave coupling, generates free carriers through the photoelectric effect and changes the electrical properties of the film, and obtains an electrical signal by detecting the change in electrical properties through external electrodes.

[0044] The present invention provides a chip-integrated electro-optical signal conversion system based on a two-dimensional layered material film, comprising:

[0045] Chip-integrated electro-optic modulator, where the passive part mainly consists of a silicon dioxide substrate and a silicon-based waveguide;

[0046] The electro-optical signal conversion module loads the electrical signal onto a two-dimensional layered material film through external electrodes. By changing the free carrier concentration, the refractive index of the chip's integrated waveguide is adjusted to achieve electro-optical phase modulation of the transmitted light field. At this time, the phase or intensity of the transmitted light field (requiring a structure such as an interferometer) will replicate the electrical signal.

[0047] The optical-to-electrical signal conversion module uses the transmitted light field to drive the photoelectric effect of the two-dimensional layered material film and change the free carrier concentration. The change in the film's conductivity can then be measured by an external electrode, replicating the optical signal carried by the transmitted light field.

[0048] In some embodiments, a chip-integrated electro-optic modulator transmits a light field radially along a silicon-based waveguide, the upper surface of which is covered with a molybdenum disulfide film; an external electrode is grown on the surface of the molybdenum disulfide film and is located on opposite sides of the cross-section of the silicon-based waveguide; a bias voltage can be applied to the molybdenum disulfide film through the external electrode, causing a change in the free carrier concentration and a change in the refractive index of the silicon-based waveguide, thereby changing the phase distribution of the transmitted light field; the transmitted light field is evanescently coupled into the molybdenum disulfide film and induces a photoelectric effect, causing a change in the free carrier concentration; the change in the conductivity of the molybdenum disulfide film can be detected through the external electrode, and information about the transmitted light field can be indirectly obtained;

[0049] In some embodiments, the principle of chip-integrated electro-optical signal conversion is that the incident laser pulse is divided into two paths by an optical beam splitter, one of which is a waveguide covered with a two-dimensional layered material film; the electrical signal is loaded onto the surface of the two-dimensional layered material film through an external electrode in the form of a modulated voltage, generating free carriers to cause the refractive index to change and causing the phase distribution of the laser pulse in this waveguide to replicate the electrical signal; the two laser pulses interfere and generate an optical signal whose intensity distribution replicates the electrical signal, completing the conversion of the electrical signal to the optical signal; the laser pulse carrying the optical signal passes through a waveguide covered with a two-dimensional layered material film, and the photogenerated free carriers will change the conductivity of the film, and the replicated laser pulse intensity distribution is tested by a conductivity testing device, completing the conversion of the optical signal to the electrical signal.

[0050] The present invention proposes an embodiment of a chip-integrated electro-optical signal conversion method based on a two-dimensional layered material film. By changing the free carrier concentration of the two-dimensional layered material film under the action of an external voltage, the refractive index of the chip-integrated waveguide is adjusted to achieve conversion of electrical signals into optical signals. By changing the free carrier concentration of the two-dimensional layered material film under the action of a light field, the conductivity of the film is adjusted and conversion of optical signals into electrical signals is achieved.

[0051] like Figure 1 As shown, this embodiment provides a chip-integrated electro-optic modulator based on a molybdenum disulfide film and relying on a silicon-on-insulator preparation process. The passive part of the modulator is mainly composed of a silicon dioxide substrate and a silicon-based waveguide. The transmitted light field is transmitted radially along the silicon-based waveguide, and the upper surface of the silicon-based waveguide is covered with a molybdenum disulfide film; an external electrode is grown on the surface of the molybdenum disulfide film and is located on the opposite side of the cross section of the silicon-based waveguide; a bias voltage can be applied to the molybdenum disulfide film through the external electrode, at which time the free carrier concentration changes and causes the refractive index of the silicon-based waveguide to change, and the phase distribution of the transmitted light field changes accordingly; the transmitted light field is evanescently coupled into the molybdenum disulfide film and induces a photoelectric effect, causing a change in the free carrier concentration. The change in the conductivity of the molybdenum disulfide film can be detected through the external electrode, and the transmitted light field information is indirectly obtained.

[0052] like Figure 2As shown, the present invention provides an embodiment of the principle of electro-optical signal conversion of chip integration, in which the incident laser pulse (transmitted light field) is divided into two paths by an optical beam splitter, and one waveguide is covered with a two-dimensional layered material film; the electrical signal is loaded onto the surface of the two-dimensional layered material film through an external electrode in the form of a modulated voltage, generating free carriers to cause the refractive index to change and causing the phase distribution of the laser pulse in this waveguide to replicate the electrical signal; the two laser pulses interfere and generate an optical signal whose intensity distribution replicates the electrical signal, thus completing the conversion of the electrical signal to the optical signal; on the other hand, the laser pulse carrying the optical signal passes through a waveguide covered with a two-dimensional layered material film, and the photogenerated free carriers will change the conductivity of the film. The intensity distribution of the laser pulse can be replicated by testing with a conductivity testing device, thus completing the conversion of the optical signal to the electrical signal. It should be noted that Figure 2 Only the basic principle of electro-optical intensity modulation is demonstrated. The signal conversion method of the present invention can also realize embodiments such as electro-optical phase modulation, electro-optical polarization modulation, and electro-optical mode field modulation.

[0053] The present invention provides an embodiment of a chip-integrated electro-optical signal conversion method based on a two-dimensional layered material film, comprising the following steps:

[0054] S201. Prepare the transmission waveguide required for the electro-optic modulator. The cross-sectional structure needs to be optimized to ensure low transmission loss and sensitive changes in the waveguide refractive index. The waveguide length needs to be optimized to achieve both low transmission loss and large modulation depth. The spatial arrangement of the waveguide needs to be optimized to ensure the most accurate coverage of the two-dimensional layered material film. In particular, the transmission waveguide used for optical-to-electrical signal conversion should guide the light field into the two-dimensional layered material film as much as possible while maintaining low transmission loss.

[0055] S202. A two-dimensional layered material film can be transferred non-destructively to the waveguide surface by chemical vapor deposition or other methods. The film thickness needs to be optimized to maximize the free carrier concentration and minimize the dissipation time per unit voltage and unit optical field intensity. The film can be closely attached to the upper and side surfaces of the waveguide or only to the upper surface.

[0056] S203. Electrical signals can be converted into optical signals in the order of external voltage → free carrier concentration → waveguide refractive index → ​​transmitted light field phase → other optical degrees of freedom. Optical signals can be converted into electrical signals in the order of evanescent light field → photogenerated free carriers → conductivity.

[0057] The present invention proposes an embodiment of a chip-integrated electro-optical signal conversion method based on a two-dimensional layered material film. By changing the free carrier concentration of the two-dimensional layered material film under the action of an external voltage, the refractive index of the chip-integrated waveguide is adjusted to achieve conversion of electrical signals into optical signals. By changing the free carrier concentration of the two-dimensional layered material film under the action of a light field, the conductivity of the film is adjusted and conversion of optical signals into electrical signals is achieved.

[0058] In some embodiments, the chip-integrated waveguide can be fabricated using standard chip-integrated optical circuit processes, possesses a certain degree of structural design freedom, can efficiently and losslessly transmit light fields, and can produce a change in refractive index under the action of free carriers. The material platforms used for the chip-integrated waveguide include, but are not limited to, silicon-on-insulator, hydrogenated amorphous silicon, silicon nitride, silicon carbide, chalcogenide glass, high-refractive-index quartz, Group III-V aluminum gallium arsenide, and Group III-V indium phosphide. Both single-material integration and multi-material hybrid integration methods can be used.

[0059] In some embodiments, the two-dimensional layered material film can control parameters through the growth process, can be transferred losslessly to the chip integrated waveguide surface through standard processes and achieve tight fitting, can accurately control electro-optical parameters with crystal structure and layer thickness as degrees of freedom, can produce photoelectric effect, that is, generate free carriers under the action of light field, can be used as a substrate to stably grow external electrodes, can generate free carriers and the concentration is sensitively related to conductivity and refractive index. The two-dimensional layered material film includes but is not limited to graphene, transition metal sulfides (molybdenum disulfide, tungsten disulfide, molybdenum diselenide, tungsten diselenide, platinum diselenide, rhenium disulfide, rhenium diselenide, indium triselenide, etc.), black phosphorus and MXene, etc., and the structural parameters and preparation process of the two-dimensional layered material film are not limited.

[0060] In some embodiments, electrical signals are converted into optical signals, an external voltage changes the free carrier concentration of a two-dimensional layered material film, the refractive index of the chip integrated waveguide covered by the film changes and affects the phase distribution of the transmitted light field, and the degrees of freedom corresponding to the optical signal include but are not limited to phase, intensity, polarization, mode, etc., without limiting the waveguide structure parameters, the external electrode structure and the growth process, and the specific structure of the all-optical signal processing system to which the electro-optic modulator belongs.

[0061] In some embodiments, optical signals are converted into electrical signals, and the transmitted light field carrying the optical signal (which must be intensity modulated) enters the two-dimensional layered material film through evanescent wave coupling, generates free carriers through the photoelectric effect and changes the electrical properties of the film. The electrical signal is obtained by detecting the change in electrical properties through external electrodes. The electrical properties corresponding to the electrical signal include but are not limited to conductivity, resistivity, microcurrent intensity, etc., and the waveguide structure parameters are not limited, and the specific structure of the electrical property detection system is not limited.

[0062] Compared with the prior art, the present invention has the following advantages:

[0063] First, the two-dimensional layered material film used in the present invention can not only increase the free carrier dissipation rate, increase the modulation depth and modulation bandwidth, and improve the conductivity detection sensitivity, but also effectively prevent waveguide breakdown caused by excessive modulation voltage;

[0064] Secondly, the electro-optic modulator of the present invention does not require an ion implantation process, has a simple structure, reliable performance, and is highly compatible with the manufacturing processes of other chip-integrated optical devices. It is particularly suitable for realizing hybrid integrated optoelectronic systems with large system scale, complex structure and functions, and a large number of devices.

[0065] In addition, the electro-optical signal conversion method described in the present invention builds a bridge between the electrical domain and the optical domain at the integrated chip scale, and is expected to promote the long-term development of chip-integrated microwave photonic systems and play an important role in applications such as multi-domain communication links and hybrid detection signal coordination.

[0066] For the convenience of description, the above devices are described as being divided into various units according to their functions. Of course, when implementing this application, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0067] It will be understood by those skilled in the art that embodiments of the present invention may be provided as methods, systems, or computer program products. Thus, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware. Furthermore, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0068] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowcharts and / or block diagrams, as well as combinations of processes and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowcharts and / or block diagrams. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0069] The present application may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present application may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communications network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0070] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0071] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 The steps for the function specified in one or more boxes.

[0072] In a typical configuration, a computing device includes one or more processors (CPUs), input / output interfaces, network interfaces, and memory.

[0073] Memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. Memory is an example of a computer-readable medium.

[0074] Computer-readable media includes permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. The information can be computer-readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer-readable media does not include transitory computer-readable media (transitory media), such as modulated data signals and carrier waves.

[0075] It should also be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.

[0076] The various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences between the other embodiments. In particular, the system embodiments are generally similar to the method embodiments, so the description is relatively simple. For relevant parts, refer to the description of the method embodiments.

[0077] The foregoing is merely an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should all be included within the scope of the claims of the present application.

Claims

1. A chip-integrated electro-optical signal conversion method based on a two-dimensional layered material film, comprising the following steps: Step 1: Convert electrical signals into optical signals. The electrical signals are loaded onto a two-dimensional layered material film through external electrodes. By changing the free carrier concentration, the refractive index of the chip's integrated waveguide is adjusted to achieve electro-optical phase modulation of the transmitted light field. The phase or intensity of the transmitted light field will replicate the electrical signal. Step 2: Convert the optical signal to an electrical signal. The transmitted light field drives the photoelectric effect of the two-dimensional layered material film and changes the free carrier concentration. The change in the film's conductivity can be measured by an external electrode, replicating the optical signal carried by the transmitted light field. This specifically includes: S101. Prepare the transmission waveguide required for the electro-optic modulator, optimize the cross-sectional structure to ensure low transmission loss and sensitive changes in the waveguide refractive index, optimize the waveguide length to achieve a balance between low transmission loss and large modulation depth, and optimize the spatial arrangement of the waveguide to ensure the most accurate coverage of the two-dimensional layered material film; S102, transferring the two-dimensional layered material film to the waveguide surface without loss, and optimizing the film thickness to maximize the free carrier concentration per unit voltage and unit optical field intensity and minimize the dissipation time; S103. The electrical signal is converted into an optical signal in the order of external voltage, free carrier concentration, waveguide refractive index, transmitted light field phase, and other optical degrees of freedom. The optical signal is converted into an electrical signal in the order of evanescent light field, photogenerated free carriers, and conductivity.

2. The chip integrated electro-optical signal conversion method based on a two-dimensional layered material film according to claim 1, characterized in that: The transmission waveguide S101 used for optical-electrical signal conversion should guide the light field to the two-dimensional layered material film as much as possible while having low transmission loss.

3. The chip integrated electro-optical signal conversion method based on a two-dimensional layered material film according to claim 1, characterized in that: The S102 film can be closely attached to the upper surface and side surfaces of the waveguide and only to the upper surface.

4. The chip integrated electro-optical signal conversion method based on a two-dimensional layered material film according to claim 1, characterized in that: The S102 non-destructively transfers a two-dimensional layered material film to the waveguide surface by chemical vapor deposition.

5. The chip integrated electro-optical signal conversion method based on a two-dimensional layered material film according to claim 1, characterized in that: By changing the free carrier concentration of a two-dimensional layered material film under the action of an external voltage, the refractive index of the chip integrated waveguide is adjusted to realize the conversion of electrical signals into optical signals. By changing the free carrier concentration of a two-dimensional layered material film under the action of a light field, the conductivity of the film is adjusted and the conversion of optical signals into electrical signals is realized.

6. The chip integrated electro-optical signal conversion method based on a two-dimensional layered material film according to claim 1, characterized in that: When electrical signals are converted into optical signals, the external voltage changes the free carrier concentration of the two-dimensional layered material film, and the refractive index of the chip integrated waveguide covered by the film changes, affecting the phase distribution of the transmitted light field.

7. The chip integrated electro-optical signal conversion method based on a two-dimensional layered material film according to claim 1, characterized in that: When optical signals are converted into electrical signals, the transmitted light field carrying the optical signal enters the two-dimensional layered material film through evanescent wave coupling, generates free carriers through the photoelectric effect and changes the electrical properties of the film. The electrical signal is obtained by detecting the change in electrical properties through external electrodes.

8. A computer-readable storage medium having a computer program stored thereon, wherein when the program is executed by a processor, the method according to any one of claims 1 to 7 is implemented.

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