Substrate processing equipment and substrate supporting unit

Abstract

The present inventive concept relates to a substrate support unit provided in an apparatus for processing a substrate using plasma. In one embodiment, the substrate support unit includes: a dielectric plate on which the substrate is placed; a lower electrode disposed below the dielectric plate and having a first diameter; a power supply rod having a second diameter for applying RF power to the lower electrode; and a grounding member disposed below the lower electrode and spaced apart from the lower electrode by an insulating member by a first gap. The grounding member includes a plate portion having a through-hole formed therein, through which the power supply rod passes, wherein the through-hole has a third diameter.

Description

Background Art

[0001] Embodiments of the inventive concepts described herein relate to an apparatus for processing a substrate using plasma, and a substrate supporting unit disposed in the apparatus and supporting a substrate.

[0002] Plasma is generated by heating a neutral gas to a very high temperature or subjecting the neutral gas to a strong electric field or radio frequency (RF) electromagnetic field, and refers to an ionized gas state of matter containing ions, electrons, and free radicals. Semiconductor device manufacturing processes may include etching processes, ashing processes, and the like using plasma. The process of processing a substrate (such as a wafer) using plasma is performed by collision of ions and free radicals contained in the plasma with the substrate.

[0003] Typically, an apparatus for processing a substrate using plasma includes a lower electrode as a plasma source for exciting a process gas into plasma. Figure 1 As shown, an apparatus for processing a substrate using plasma includes a support member 10 for supporting the substrate. The support member 10 includes an electrostatic chuck 1, a lower electrode 2, an insulating member 3 formed of a ceramic material, and a conductive member 4. The conductive member 4 is grounded. The lower electrode 2 is coupled to an RF rod 5. The lower electrode 2 is electrically connected to the RF rod 5. The RF rod 5 is connected to a power supply 6. The power supply 6 supplies RF power to the RF rod 5. That is, the RF rod 5 supplies RF power to the lower electrode 2. Typically, a substrate W is supported on the top side of the lower electrode 2. That is, the lower electrode 2 can allow plasma to be generated above the substrate W. RF current flows through the RF rod 5 connected to the power supply 6. The RF current flows along the surface of the RF rod 5. An air gap is formed between the lower electrode 2 and the conductive member 4.

[0004] Even when high power is fed to the lower section, Figure 1 The air gap structure shown can also help control the arc, and because power loss is lower than in the related art even when high power is input, an electrode structure with low temperature and relatively low power loss can be achieved. In addition, even in terms of plasma symmetry, a constant gap between the conductive member 4 and the lower electrode 2, forming an air gap below the lower electrode 2, can achieve many effects.

[0005] Compared with the structure of existing equipment, the air gap structure can significantly improve the processing efficiency. However, the mutual electrical influence between the RF rod 5, the lower electrode 2 and the conductive member 4 may increase the impedance, and even if the power supply voltage is increased, the field effect formed on the lower surface will inevitably affect the substrate processing process.

[0006] Furthermore, dispersion of a strong electric field may occur in a region where the RF rod 5 and the lower electrode 2 are in contact with each other, and due to the dispersion of the strong electric field, the RF current delivered to the lower electrode 2 when viewed from above may be unequally delivered to regions of the lower electrode 2. Consequently, the electric field generated above the substrate may be non-uniform, and the uniformity of the plasma generated above the substrate may be reduced, which may result in a reduction in substrate processing efficiency. Summary of the Invention

[0007] Embodiments of the inventive concept provide a supporting unit for efficiently processing a substrate, and a substrate processing apparatus including the supporting unit.

[0008] Embodiments of the present inventive concept provide a support unit for minimizing electric field concentration on an area where an electrode is connected to a power supply rod provided in the support unit and minimizing electrical impedance, and a substrate processing apparatus including the support unit.

[0009] Embodiments of the inventive concept provide a support unit for providing an additional control factor when adjusting the density of plasma generated above a substrate, and a substrate processing apparatus including the support unit.

[0010] Embodiments of the inventive concept provide a support unit for improving etch rate (ER) uniformity per region of a substrate (eg, wafer) by offsetting a high field intensity concentrated on a central portion of the substrate, and a substrate processing apparatus including the support unit.

[0011] Embodiments of the inventive concept provide a support unit for minimizing eddy current formed in a region of a ground member when feeding RF power, and a substrate processing apparatus including the support unit.

[0012] Embodiments of the inventive concept provide a supporting unit for minimizing noise caused by RF energy transferred to a ground member during feeding RF power, and a substrate processing apparatus including the supporting unit.

[0013] The technical problems solved by the inventive concept are not limited to the problems mentioned above, and any other technical problems not mentioned herein will be clearly understood by those skilled in the art to which the inventive concept pertains from the following description.

[0014] According to one embodiment, a substrate support unit provided in an apparatus for processing a substrate using plasma includes: a dielectric plate on which a substrate is placed; a lower electrode disposed below the dielectric plate and having a first diameter; a power supply rod having a second diameter for applying RF power to the lower electrode; and a grounding member disposed below the lower electrode and spaced apart from the lower electrode by an insulating member by a first gap. The grounding member includes a plate portion having a through-hole formed therein through which the power supply rod passes, wherein the through-hole has a third diameter. The lower electrode includes a deformed portion extending downward from the center of a lower surface of the lower electrode and having a diameter that decreases toward the bottom, and the power supply rod is coupled to an end portion of the deformed portion.

[0015] In one embodiment, the ground member may further include a guide portion extending in a radial direction from an inner diameter of the through hole by a predetermined length and spaced apart from the power supply rod by a second gap.

[0016] In one embodiment, the guide portion may include an extension portion extending along the deformation portion and spaced apart from the deformation portion by a predetermined distance.

[0017] In one embodiment, the guide portion may be formed integrally with the ground member, or formed separately from the ground member, and may be electrically connected to the ground member.

[0018] In one embodiment, the deformed portion may be formed in a tapered shape having a diameter decreasing toward the bottom.

[0019] In one embodiment, the deformed portion may be formed in a circular shape, a vertical section of which has a diameter that decreases toward the bottom.

[0020] In one embodiment, the first diameter may be five to eight times the first gap.

[0021] In one embodiment, the third diameter may be 10 mm or more larger than the first gap.

[0022] In one embodiment, the second diameter may be six to eight times the second gap.

[0023] According to one embodiment, a substrate support unit provided in an apparatus for processing a substrate using plasma includes: a dielectric plate on which the substrate is placed; a lower electrode disposed below the dielectric plate and having a first diameter; a power supply rod having a second diameter for applying RF power to the lower electrode; and a grounding member disposed below the lower electrode and spaced apart from the lower electrode by an insulating member by a first gap. The grounding member includes a plate portion having a through hole formed therein through which the power supply rod passes, wherein the through hole has a third diameter. The grounding member also includes a guide portion extending radially from an inner diameter of the through hole by a predetermined length and spaced apart from the power supply rod by a second gap.

[0024] In one embodiment, the guide portion may be formed integrally with the ground member, or formed separately from the ground member, and may be electrically connected to the ground member.

[0025] In one embodiment, the first diameter may be five to eight times the first gap.

[0026] In one embodiment, the third diameter may be 10 mm or more larger than the first gap.

[0027] In one embodiment, the second diameter may be six to eight times the second gap.

[0028] According to one embodiment, a substrate support unit provided in an apparatus for processing a substrate using plasma includes: a dielectric plate on which the substrate is placed; a lower electrode disposed below the dielectric plate and having a first diameter; a power supply rod having a second diameter for applying RF power to the lower electrode; and a grounding member disposed below the lower electrode and spaced apart from the lower electrode by an insulating member by a first gap. The grounding member includes a plate portion having a through hole formed therein through which the power supply rod passes, wherein the through hole has a third diameter. The first gap increases with distance from the power supply rod.

[0029] In one embodiment, the upper surface of the plate portion of the ground member may be formed such that the inner region and the outer region have different heights.

[0030] In one embodiment, the upper surface of the plate portion may have a height that decreases from the inner region toward the outer region.

[0031] In one embodiment, the substrate supporting unit may further include a guide portion extending in a predetermined length from an inner diameter of the through hole and spaced apart from the power supply rod by a second gap.

[0032] In one embodiment, the lower electrode may include a deformation portion extending downward from a center of a lower surface of the lower electrode and having a diameter decreasing toward the bottom, and the power supply rod may be coupled to an end portion of the deformation portion.

[0033] According to one embodiment, an apparatus for processing a substrate includes: a chamber having a processing space therein; a support unit for supporting the substrate in the processing space; a gas supply unit for supplying gas into the processing space; and a plasma source for generating plasma from the gas. The support unit includes a dielectric plate on which the substrate is placed; a lower electrode having a first diameter and disposed below the dielectric plate; a power supply rod having a second diameter for applying RF power to the lower electrode; and a grounding member disposed below the lower electrode and separated from the lower electrode by a first gap by an insulating member. The grounding member includes a plate portion having a through-hole formed therein for the power supply rod to pass through, wherein the through-hole has a third diameter. The lower electrode includes a deformed portion extending downward from the center of the lower surface of the lower electrode and having a diameter that decreases toward the bottom, and the power supply rod is coupled to an end portion of the deformed portion. The grounding member also includes a guide portion extending upward from the inner diameter of the through-hole by a predetermined length and separated from the power supply rod by a second gap. The guide portion is either integrally formed with the grounding member or formed separately from the grounding member and electrically connected to the grounding member. The first gap increases with distance from the power supply rod. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, in which like reference numerals refer to like parts throughout the various figures unless otherwise specified, and in which:

[0035] Figure 1 is a diagram showing a portion of a support unit that supports a substrate in a conventional apparatus for processing a substrate using plasma;

[0036] Figure 2 is a diagram illustrating a substrate processing apparatus according to an embodiment of the inventive concept and a substrate supporting unit according to a first embodiment provided herein;

[0037] Figure 3 is based on Figure 2 An enlarged cross-sectional view of the substrate supporting unit of the first embodiment is shown;

[0038] Figure 4 is a cross-sectional view of a substrate supporting unit according to a second embodiment;

[0039] Figure 5 is a cross-sectional view of a substrate supporting unit according to a third embodiment;

[0040] Figure 6 is a cross-sectional view of a substrate supporting unit according to a fourth embodiment;

[0041] Figure 7 is a sectional view of a substrate supporting unit according to a fifth embodiment;

[0042] Figure 8 is a cross-sectional view of a substrate supporting unit according to a sixth embodiment;

[0043] Figure 9 is a cross-sectional view of a substrate supporting unit according to a seventh embodiment;

[0044] Figure 10 Shows the basis Figure 7 Simulation results of RF energy of a substrate supporting unit according to the fifth inventive embodiment are shown; and

[0045] Figure 11 is a sectional view of a substrate supporting unit according to an eighth embodiment. DETAILED DESCRIPTION

[0046] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. However, the present invention can be implemented in various forms and is not limited to the embodiments described herein. In addition, when describing embodiments of the present invention, detailed descriptions related to well-known functions or configurations will be omitted when they may unnecessarily obscure the subject matter of the present invention. In addition, throughout the accompanying drawings, components that perform similar functions and operations are provided with the same reference numerals.

[0047] The terms "include / comprise" in this specification are "open" expressions that simply state the presence of corresponding components and, unless specifically described to the contrary, do not exclude but may include additional components. Specifically, it should be understood that the terms "include / comprise" and "having" when used herein specify the presence of stated features, integers, steps, operations, components, and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, components, parts, and / or groups of the above items.

[0048] Unless otherwise specified, terms in the singular may include plural forms. In addition, in the drawings, the shapes and sizes of components may be exaggerated for clarity of illustration.

[0049] However, the present invention may be implemented in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the present invention will be thorough and complete and will fully convey the scope of the present invention to those skilled in the art. In the accompanying drawings, the dimensions of components are exaggerated for clarity of illustration.

[0050] Hereinafter, a substrate processing apparatus for etching a substrate using plasma according to an embodiment of the present inventive concept will be described. However, the present inventive concept is not limited thereto and is applicable to various types of apparatuses for performing a process by supplying plasma into a chamber.

[0051] Figure 2 is a diagram illustrating a substrate processing apparatus according to an embodiment of the inventive concept and a substrate supporting unit according to a first embodiment provided herein, and Figure 3 is based on Figure 2 FIG1 is an enlarged cross-sectional view of the substrate support unit of the first embodiment. Figure 2 and Figure 3 The substrate processing apparatus 1000 uses plasma to process a substrate W. The substrate processing apparatus 1000 includes a chamber 100, a substrate supporting unit 200, a showerhead unit 300, a gas supply unit 400, a plasma source, a liner unit (not shown), a baffle unit 600, and a controller (not shown).

[0052] The chamber 100 has a processing space in which a substrate processing process is performed. The chamber 100 is configured to be closed. The chamber 100 can be formed of a conductive material. For example, the chamber 100 can be formed of a material containing ceramics. The chamber 100 can be formed of an aluminum material. The chamber 100 can be grounded. The chamber 100 has an exhaust hole 104 formed in its bottom. The exhaust hole 104 is connected to an exhaust line 151. The exhaust line 151 is connected to a pump 153. Reaction byproducts generated during the substrate processing process and gases remaining in the internal space of the chamber 100 can be released to the outside through the exhaust line 151. The pressure in the chamber 100 is reduced to a predetermined pressure through the exhaust process. Alternatively, a separate decompression member can be provided to reduce the pressure in the processing space 102 to a predetermined pressure.

[0053] A heater (not shown) may be provided in the wall of the chamber 100. The heater heats the wall of the chamber 100. The heater is electrically connected to a heating power source (not shown). The heater generates heat by resisting the current applied by the heating power source. The heat generated by the heater is transferred to the inner space. The temperature in the processing space is maintained at a predetermined temperature by the heat generated by the heater. The heater may be implemented with a heating wire having a coil shape. A plurality of heaters may be provided in the wall of the chamber 100.

[0054] The substrate support unit 200 is located in the chamber 100. The substrate support unit 200 supports the substrate W in the processing space. The substrate support unit 200 may include an electrostatic chuck (ESC) that electrostatically clamps the substrate W using electrostatic force. Alternatively, the substrate support unit 200 may support the substrate W in various ways, such as mechanical clamping. Hereinafter, the substrate support unit 200 including the electrostatic chuck (ESC) will be described.

[0055] The substrate supporting unit 200 includes a dielectric plate 220, a body plate 230, a focus ring 240, an RF supporting plate 270, an insulating cover 280, a grounding member 290, and a lower cover 295. The substrate supporting unit 200 may be located in the chamber 100 and may be spaced upward from the bottom of the chamber 100.

[0056] The dielectric plate 220 is located at the top of the substrate support unit 200. The dielectric plate 220 is formed of a dielectric material having a circular plate shape. The substrate W is placed on the upper surface of the dielectric plate 220. The radius of the upper surface of the dielectric plate 220 is smaller than the radius of the substrate W. Therefore, the edge area of the substrate W is located outside the dielectric plate 220. The dielectric plate 220 has first supply channels 221 formed therein. The first supply channels 221 extend from the upper surface of the dielectric plate 220 to the bottom surface thereof. A plurality of first supply channels 221 are formed so as to be spaced apart from each other. The first supply channels 221 serve as channels through which a heat transfer medium is supplied to the bottom surface of the substrate W.

[0057] The electrostatic electrode 223 and the heater 225 are embedded in the dielectric plate 220. The electrostatic electrode 223 is located above the heater 225. The electrostatic electrode 223 is electrically connected to a first lower power source 223a. The first lower power source 223a includes a direct current (DC) power source. A switch 223b is installed between the electrostatic electrode 223 and the first lower power source 223a. The electrostatic electrode 223 can be electrically connected to or disconnected from the first lower power source 223a by turning the switch 223b on or off. When the switch 223b is turned on, a DC current is applied to the electrostatic electrode 223. Due to the current applied to the electrostatic electrode 223, an electrostatic force acts between the electrostatic electrode 223 and the substrate W, and the substrate W is clamped to the dielectric plate 220 by the electrostatic force.

[0058] The heater 225 is electrically connected to the second lower power source 225a. The heater 225 generates heat by resisting the current applied by the second lower power source 225a. The generated heat is transferred to the substrate W through the dielectric plate 220. The heat generated by the heater 225 maintains the substrate W at a predetermined temperature. The heater 225 includes a spiral coil.

[0059] The main plate 230 is located below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the upper surface of the main plate 230 can be attached to each other by an adhesive 236. The main plate 230 can be formed of an aluminum material. The upper surface of the main plate 230 can have a step so that the central area is located at a higher position than the edge area. The central area of the upper surface of the main plate 230 has an area corresponding to the bottom surface of the dielectric plate 220 and is attached to the bottom surface of the dielectric plate 220. The main plate 230 has a first circulation channel 231, a second circulation channel 232, and a second supply channel 233 formed therein.

[0060] The body plate 230 may include a metal plate. The body plate 230 may be connected to the RF power supply 620 via the RF transmission line 610. Power may be applied from the RF power supply 620 to the body plate 230, and the body plate 230 may allow the plasma generated in the processing space to be effectively supplied to the substrate W. That is, the body plate 230 may function as an electrode. Figure 2 In the embodiment, the substrate processing apparatus 1000 is implemented as a CCP type. However, not limited thereto, the substrate processing apparatus 1000 according to an embodiment of the present inventive concept may be implemented as an ICP type. In the case where the substrate processing apparatus 1000 is implemented as an ICP type, the RF transmission line 610 may be connected to the lower electrode for generating plasma, and power may be applied from the RF power supply 620 to the lower electrode.

[0061] The first circulation channel 231 serves as a channel through which the heat transfer medium circulates. The first circulation channel 231 may be formed in a spiral shape on the inner side of the main plate 230. Alternatively, the first circulation channel 231 may be implemented as annular channels having different radii and being concentric with each other. The first circulation channels 231 may be fluidically connected. The first circulation channels 231 are formed at the same height.

[0062] The second circulation channel 232 serves as a channel for circulating cooling fluid. The second circulation channel 232 may be formed in a spiral shape on the inner side of the main plate 230. Alternatively, the second circulation channel 232 may be implemented by annular channels having different radii and being concentric with each other. The second circulation channels 232 may be fluidically connected. The second circulation channel 232 may have a larger cross-sectional area than the first circulation channel 231. The second circulation channel 232 may be formed at the same height. The second circulation channel 232 may be located below the first circulation channel 231.

[0063] The second supply passages 233 extend upward from the first circulation passages 231 to the upper surface of the body plate 230. As many second supply passages 233 are provided as the first supply passages 221. The second supply passages 233 connect the first circulation passages 231 and the first supply passages 221.

[0064] The first circulation channel 231 is connected to the heat transfer medium reservoir 231a via a heat transfer medium supply line 231b. A heat transfer medium is stored in the heat transfer medium reservoir 231a. The heat transfer medium includes an inert gas. According to one embodiment, the heat transfer medium includes helium (He) gas. Helium is supplied to the first circulation channel 231 via the heat transfer medium supply line 231b. The helium passes through the second supply channel 233 and the first supply channel 221 in sequence and is supplied to the bottom surface of the substrate W. The helium serves as a medium through which the heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck.

[0065] The second circulation fluid channel 232 is connected to the cooling fluid reservoir 232a via a cooling fluid supply line 232c. The cooling fluid reservoir 232a stores cooling fluid. The cooling fluid reservoir 232a may include a cooler 232b. The cooler 232b cools the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be arranged in series with the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation channel 232 via the cooling fluid supply line 232c cools the main plate 230 as it circulates along the second circulation channel 232. During cooling, the main plate 230 cools the dielectric plate 220 and the substrate W together to maintain the substrate W at a predetermined temperature.

[0066] The focus ring 240 is disposed on the edge region of the electrostatic chuck. The focus ring 240 has a ring shape and is disposed around the dielectric plate 220. Furthermore, the focus ring 240 may be disposed on the upper surface of the insulating cover 280. The upper surface of the focus ring 240 may have a step such that the outer portion 240a is located at a higher position than the inner portion 240b. The inner portion 240b of the upper surface of the focus ring 240 is located at the same height as the upper surface of the dielectric plate 220. The inner portion 240b of the upper surface of the focus ring 240 supports the edge region of the substrate W located outside the dielectric plate 220. The outer portion 240a of the focus ring 240 surrounds the edge region of the substrate W. The focus ring 240 allows plasma to be concentrated on an area of the chamber 100 that is opposite the substrate W.

[0067] An air gap 285 is formed below the body plate 230. The air gap 285 is formed between the RF support plate 270 and a ground member 290 to be described below. The air gap 285 may be surrounded by the insulating cover 280. The air gap 285 electrically insulates the RF support plate 270 and the ground member 290.

[0068] The RF support plate 270 is disposed below the main body plate 230. The upper surface of the RF support plate 270 contacts the lower surface of the main body plate 230. The RF support plate 270 may have a circular plate shape. The RF support plate 270 is formed of a conductive material. For example, the RF support plate 270 may be formed of an aluminum material.

[0069] The RF support plate 270 includes an electrode plate portion 271, a deformed portion 272, and a rod coupling portion 273. The flat surface of the electrode plate portion 271 may have a shape corresponding to the shape of the flat surface of the main body plate 230. The deformed portion 272 extends downward from the center of the electrode plate portion 271. The deformed portion 272 may have a diameter that gradually decreases from the top toward the bottom. The rod coupling portion 273 extends from the bottom of the deformed portion 272.

[0070] The power supply rod 275 can supply power to the RF support plate 270. The power supply rod 275 can be electrically connected to the RF support plate 270. The power supply rod 275 can be connected to the lower power supply 227. The lower power supply 227 can be implemented as an RF power supply that generates RF power. The RF power supply can be a high-bias RF power supply. The lower power supply 227 can include multiple RF power supplies. The multiple RF power supplies can be implemented using a combination of one or more of high frequency (27.12 MHz or higher), medium frequency (1 MHz to 27.12 MHz), and low frequency (100 kHz to 1 MHz). The power supply rod 275 receives RF power from the lower power supply 227. The power supply rod 275 can be formed of a conductive material. For example, the power supply rod 275 can be formed of a material containing metal. The power supply rod 275 can be a metal rod. In addition, the power supply rod 275 can be connected to a matcher (not shown). The third lower power supply 235a and the power supply rod 275 can be connected via a matcher (not shown). The matcher (not shown) can perform impedance matching.

[0071] The insulating cover 280 supports the RF support plate 270. The insulating cover 280 can be arranged to contact the side surface of the RF support plate 270. The insulating cover 280 can be arranged to contact the edge area of the lower surface of the RF support plate 270. For example, the insulating cover 280 can have a cylindrical shape with openings at the top and bottom. In addition, the insulating cover 280 can have a step inside so that the RF support plate 270 is supported by the insulating cover 280. The insulating cover 280 can be formed of an insulating material.

[0072] The grounding member 290 is an electrical grounding component and may have a through hole at its center through which the power supply rod 275 passes.

[0073] The lower cover 295 is located at the bottom of the substrate support unit 200. The lower cover 295 is spaced upward from the bottom of the chamber 100. The lower cover 295 has a space formed therein that is open at the top. The upper surface of the lower cover 295 is covered by the grounding member 290. Therefore, the outer diameter of the cross section of the lower cover 295 can be equal to the outer diameter of the grounding member 290. The lower cover 295 can have a lift pin module (not shown) in its internal space. The lift pin module allows the substrate W to be moved from the external transfer member to the substrate support surface corresponding to the upper surface of the substrate support member 200.

[0074] The lower cover 295 includes a connecting member 297. The connecting member 297 connects the outer surface of the lower cover 295 and the inner wall of the chamber 100. A plurality of connecting members 297 may be provided on the outer surface of the lower cover 295 at predetermined intervals. The connecting member 297 supports the substrate support unit 200 within the chamber 100. In addition, the connecting member 297 is connected to the inner wall of the chamber 100 to allow the lower cover 295 to be electrically grounded. A first power line 223c connected to the first lower power source 223a, a second power line 225c connected to the second lower power source 225a, a heat transfer medium supply line 231b connected to the heat transfer medium reservoir 231a, and a cooling fluid supply line 232c connected to the cooling fluid reservoir 232a extend into the lower cover 295 through the inner space of the connecting member 297.

[0075] The lower cover 295 is disposed below the insulating cover 280. The lower cover 295, disposed below the insulating cover 280, supports the insulating cover 280. The lower cover 295 may be formed of a conductive material. For example, the lower cover 295 may be formed of a material including metal. The lower cover 295 may be electrically connected to the chamber 100. The lower cover 295 may be electrically grounded.

[0076] Recently, research has been conducted to optimize the electromagnetic properties of RF in technologies for applying high-power power to power rods 275. Specifically, research has been conducted to optimize the dispersion of RF power supplied to the substrate support unit via power rods 275. This is because the inventors of the present invention determined that the direction of RF power dispersion contributes effectively to the efficient transmission of RF power. In other words, the inventors of the present invention determined that applying power to a portion where RF power dispersion is most likely to occur easily results in finding a point with low impedance resistance. This predicts that the characteristics of RF feeds can be effectively utilized by using shapes used in radar or electromagnetic communications.

[0077] exist Figure 3In this case, "A" represents the gap between the bottom surface of the electrode plate portion 271 of the RF support plate 270 and the upper surface of the plate portion 291 of the ground member 290. "B" refers to the diameter of the electrode plate portion 271. "C" represents the separation gap between the inner wall of the through hole formed in the plate portion 291 and the power supply rod 275. "D" represents the inner diameter of the through hole formed in the plate portion 291. "E" represents the diameter of the power supply rod 275. The inventors of the present inventive concept wanted to set the specific dimensions of the components constituting the substrate support unit. The specific dimensions of the components constituting the substrate support unit are defined as follows.

[0078] <Dimension Definition>

[0079] 1. D < A, and A is 10 mm or more larger than D.

[0080] 2. B = A x (5 to 8). Considering impedance efficiency and size, A is 1 / 8 to 1 / 5 times the diameter B of the electrode plate portion 271 of the RF support plate 270.

[0081] 3. C x (6 to 8) < E

[0082] 4. Considering the frequency and power of the RF power, E is determined within the range of 20 mm to 40 mm.

[0083] 5. (2 x C) + E = D

[0084] The following equations are used to calculate the inductance value and capacitance value to improve the efficiency of RF power.

[0085] [Equation 1]

[0086]

[0087] The basic impedance can be obtained through Equation 1, and L and C can be obtained through the coaxial line formula.

[0088] [Equation 2]

[0089]

[0090] [Equation 3]

[0091]

[0092] [Equation 4]

[0093]

[0094] Equation 2 is the equation for calculating the characteristic impedance. Equation 3 is the equation for calculating the inductance of the power supply rod 275. Equation 4 is the equation for calculating the stray capacitance of the power supply rod 275.

[0095] Compare where such as Figure 1 In the conventional case where the corner is formed at the portion where the lower electrode 2 and the RF rod 5 are connected, and in an embodiment of the present inventive concept in which the lower portion of the RF support plate 270 (in the embodiment, the RF support plate 270 and the main body plate 230 serve as the lower electrode because the main body plate 230 and the RF support plate 270 are electrically connected) has a diameter that gradually decreases toward the bottom (for example, formed into a rounded or chamfered shape), when RF wave energy travels along the power rod 275, the embodiment of the present inventive concept can reduce the inductance value of the length of the power rod 275 and increase the capacitance value. As can be seen, this is an important factor in adjusting impedance and controlling the upper field.

[0096] When the deformed portion 272 is provided in a chamfered shape in the first embodiment, a distance x or y of the chamfer (which is a chamfer value) may be defined as follows.

[0097] C(mm)< chamfer distance x or y(mm) <C x 20(mm)

[0098] Here, the range of the chamfer is between 0° and 90°. Meanwhile, when the deformed portion 272 is provided in a chamfered shape, the x value and the y value may be different from each other.

[0099] Meanwhile, the deformation portion 272 may be implemented with a deformation portion 2272 whose vertical cross section tapers in a circular shape, as will be described below with reference to Figure 7 The following will refer to Figure 7 Give its detailed description.

[0100] Figure 4 According to the second embodiment, Figure 2 The following is a cross-sectional view of a substrate support unit in a substrate processing device. Figure 4 A substrate supporting unit according to a second embodiment is described. Figure 2 and Figure 3 Components that are identical to those described will be assigned the same reference numerals and will be used in conjunction with Figure 2 and Figure 3 The aforementioned description set forth may apply identically to components having the same reference numerals.

[0101] refer to Figure 4 , an RF support plate 1270 including an electrode plate portion 1271 is provided, and a power supply rod 275 is connected to the RF support plate 1270 .

[0102] An air gap 285 is formed below the RF support plate 1270. The air gap 285 is formed between the RF support plate 1270 and a ground member 1290 to be described below. The air gap 285 may be surrounded by an insulating cover 280. The air gap 285 electrically insulates the RF support plate 1270 and the ground member 1290.

[0103] The grounding member 1290 is an electrical grounding component. The grounding member 1290 includes a plate portion 1291, and the plate portion 1291 has a through hole at its center through which the power supply rod 275 passes. The guiding portion 1292 extends from the inner diameter of the through hole formed at the center of the grounding member 1290 toward the air gap 285. The guiding portion 1292 is spaced apart from the power supply rod 275 by a set distance and surrounds the power supply rod 275.

[0104] The guiding portion 1292 is used to uniformly transmit RF energy upward. When the guiding portion 1292 is not provided, the plasma uniformity is poor compared to when the guiding portion 1292 is provided. Therefore, the processing result is very poor. The inventors of the present inventive concept have found that when the guiding portion 1292 is not provided, due to the radiation of RF energy, the RF energy is transmitted to the plate portion 1291 of the grounding member 1290, and the plate portion 1291 cannot be properly used as a ground, so that the RF energy transmitted to the plate portion 1291 causes noise in the space for processing the substrate W. The inventors of the present inventive concept have recognized that when the guiding portion 1292 is provided as in the second embodiment of the present inventive concept, there is a trade-off between the energy loss caused by the guiding portion 1292 during the transmission of RF power and the advantages of the present inventive concept. However, the present inventors have recognized that the present inventive concept meets the recent trend of scaling down and has commercial value because the effect of improving plasma uniformity by suppressing noise through the guiding portion 1292 enables high-quality processing.

[0105] In Figure 4 "A" represents the gap between the bottom surface of the electrode plate portion 1271 of the RF support plate 1270 and the upper surface of the plate portion 1291 of the grounding member 1290. "B" refers to the diameter of the electrode plate portion 1271. "C" refers to the separation gap between the inner wall of the guiding portion 1292 and the power supply rod 275. "D" represents the inner diameter of the guiding portion 1292. "E" represents the diameter of the power supply rod 275. The inventors of the present inventive concept want to set the specific dimensions of the components constituting the substrate support unit. The specific dimensions of the components constituting the substrate support unit are defined as follows.

[0106] <Dimension Definition>

[0107] 1. D < A, and A is 10 mm or more larger than D.

[0108] 2. B = A x (5 to 8). Considering the impedance efficiency and size, A is 1 / 8 to 1 / 5 times the diameter B of the electrode plate portion 1271 of the RF support plate 1270.

[0109] 3. C x (6 to 8) < E

[0110] 4. Taking into account the frequency and power of RF power, E is determined within the range of 20 mm to 40 mm.

[0111] 5. (2 x C) + E = D

[0112] Figure 5 The third embodiment is set in Figure 2 The following is a cross-sectional view of a substrate support unit in a substrate processing device. Figure 5 A substrate supporting unit according to a third embodiment will be described. Figures 2 to 4 Components that are identical to those described will be assigned the same reference numerals and will be used in conjunction with Figures 2 to 4 The aforementioned description set forth may apply identically to components having the same reference numerals.

[0113] refer to Figure 5 , an RF support plate 2270 is provided, including an electrode plate portion 2271, and a deformed portion 2272 protruding from the bottom of the electrode plate portion 2271. The deformed portion 2272 may have a vertical cross-section that tapers to a circular shape. A rod coupling portion 273 extends downward from the bottom of the deformed portion 2272. A power supply rod 275 is coupled to and electrically connected to the rod coupling portion 273.

[0114] An air gap 285 is formed below the RF support plate 2270. The air gap 285 is formed between the RF support plate 2270 and a ground member 1290 to be described below. The air gap 285 may be surrounded by an insulating cover 280. The air gap 285 electrically insulates the RF support plate 2270 from the ground member 1290.

[0115] Grounding member 1290 is an electrical grounding component. Grounding member 1290 includes a plate portion 1291. Plate portion 1291 has a through-hole at its center, through which power supply rod 275 passes. A guide portion 1292 extends from the inner diameter of the through-hole formed in the center of grounding member 1290 toward air gap 285. Guide portion 1292 is formed to surround power supply rod 275.

[0116] The guide portion 1292 is used to uniformly transmit RF energy upward. As described above, there is a tradeoff between the energy loss caused by the guide portion 1292 during RF energy transmission and the advantages of the present invention. The guide portion 1292 may be located at a higher position than the position where the power supply rod 275 is coupled to the RF support plate 2270. However, considering the tradeoff with energy loss, the guide portion 1292 may be appropriately designed.

[0117] exist Figure 5In this case, "A" represents the gap between the bottom surface of the electrode plate portion 2271 of the RF support plate 2270 and the upper surface of the plate portion 1291 of the ground member 1290. "B" refers to the diameter of the electrode plate portion 2271. "C" refers to the separation gap between the inner wall of the guiding portion 1292 and the power supply rod 275. "D" represents the inner diameter of the guiding portion 1292. "E" represents the diameter of the power supply rod 275. The inventors of the present inventive concept wanted to set the specific dimensions of the components constituting the substrate support unit. The specific dimensions of the components constituting the substrate support unit are defined as follows.

[0118] <Dimension Definition>

[0119] 1. D < A, and A is 10 mm or more larger than D.

[0120] 2. B = A x (5 to 8). Considering the impedance efficiency and size, A is 1 / 8 to 1 / 5 times the diameter B of the electrode plate portion 2271 of the RF support plate 2270.

[0121] 3. C x (6 to 8) < E

[0122] 4. Considering the frequency and power of the RF power, E is determined within the range of 20 mm to 40 mm.

[0123] 5. (2 x C) + E = D

[0124] The R value (the radius forming the curved surface of the circular portion) of the vertical cross-section of the tapered deformation portion 2272 in a circular shape can be defined as follows.

[0125] C (mm) < the radius R (mm) of the curved surface forming the circular portion < C x 20 (mm)

[0126] Here, the rounded corner range of the deformation portion 2272 in a circular shape is between 0° and 90°.

[0127] Figure 6 is a cross-sectional view of the substrate support unit provided in the Figure 2 substrate processing apparatus according to the fourth embodiment. Hereinafter, the substrate support unit according to the fourth embodiment will be described with reference to Figure 6 Components identical to those described above with reference to Figures 2 to 5 are assigned the same reference numerals, and the foregoing description incorporated with Figures 2 to 5 can be applied to the components with the same reference numerals in the same manner.

[0128]

[0128] Refer to Figure 6The deformed portion 272 is provided in a chamfered shape on the bottom of the electrode plate portion 271 of the RF support plate 270. The guide portion 1292 extends from the inner diameter of the through hole formed in the center of the grounding member 1290 toward the air gap 285. The guide portion 1292 is formed to surround the power supply rod 275.

[0129] The guide portion 1292 is used to uniformly transmit RF energy upward. As described above, there is a tradeoff between the energy loss caused by the guide portion 1292 during RF energy transmission and the advantages of the present invention. The guide portion 1292 may be located at a higher position than the position where the power supply rod 275 is coupled to the RF support plate 270. However, considering the tradeoff with energy loss, the guide portion 1292 may be appropriately designed.

[0130] Figure 7 The fifth embodiment is set in Figure 2 The following is a cross-sectional view of a substrate support unit in a substrate processing device. Figure 7 A substrate supporting unit according to a fifth embodiment will be described. Figures 2 to 6 Components that are identical to those described will be assigned the same reference numerals and will be used in conjunction with Figures 2 to 6 The aforementioned description set forth may apply identically to components having the same reference numerals.

[0131] refer to Figure 7 , an RF support plate 2270 is provided, including an electrode plate portion 2271, and a deformed portion 2272 protruding from the bottom of the electrode plate portion 2271. The deformed portion 2272 may have a vertical cross-section that tapers to a circular shape. A rod coupling portion 273 extends downward from the bottom of the deformed portion 272. A power supply rod 275 is coupled to and electrically connected to the rod coupling portion 273.

[0132] The grounding member 2290 is an electrical grounding component. The grounding member 2290 includes a plate portion 2291. The plate portion 2291 has a through hole at its center, through which the power supply rod 275 passes. The guiding portion 2292 extends from the inner diameter of the through hole formed at the center of the plate portion 2291 toward the air gap 285. The guiding portion 2292 is formed to surround the power supply rod 275, and the guiding portion 2292 further includes an extension portion 2293. The extension portion 2293 is spaced apart from the deformed portion 2272 of the RF support plate 2270 and surrounds the deformed portion 2272. The extension portion 2293 can prevent the RF energy collected in the deformed portion 2272 from being radiated to the plate portion 2291 of the grounding member 2290. Therefore, the guiding portion 2292 is used to uniformly transmit the RF energy upward while preventing the RF energy from being transmitted to the plate portion 2291 and causing noise. At the same time, as described above, there is a trade-off between the energy loss caused by the guiding portion 2292 during the transmission of the RF energy and the advantages of the inventive concept. However, considering the trade-off relationship with the energy loss, the height or thickness of the guiding portion 2292 can be appropriately designed.

[0133] In Figure 7 it, "A" represents the gap between the bottom surface of the electrode plate portion 2271 of the RF support plate 2270 and the upper surface of the plate portion 2291 of the grounding member 2290. "B" refers to the diameter of the electrode plate portion 2271. "C" refers to the separation gap between the inner wall of the guiding portion 2292 and the power supply rod 275. "D" represents the inner diameter of the guiding portion 2292. "E" represents the diameter of the power supply rod 275. The inventors of the inventive concept wanted to set the specific dimensions of the components constituting the substrate support unit. The specific dimensions of the components constituting the substrate support unit are defined as follows.

[0134] <Dimension Definition>

[0135] 1. D < A, and A is 10 mm or more larger than D.

[0136] 2. B = A x (5 to 8). Considering the impedance efficiency and size, A is 1 / 8 to 1 / 5 times the diameter B of the electrode plate portion 2271 of the RF support plate 2270.

[0137] 3. C x (6 to 8) < E

[0138] 4. Considering the frequency and power of the RF power, E is determined within the range of 20 mm to 40 mm.

[0139] 5. (2 x C) + E = D

[0140] The R value (the radius forming the curved surface of the circular portion) of the vertical cross-section of the deformed portion 2272 tapered in a circular shape can be defined as follows.

[0141] C (mm) < radius R (mm) of the curved surface forming the circular portion <C x 20(mm)

[0142] Here, the rounded angle range of the circularly deformed portion 2272 is between 0° and 90°.

[0143] Figure 8 The sixth embodiment is set in Figure 2 The following is a cross-sectional view of a substrate support unit in a substrate processing device. Figure 8 A substrate supporting unit according to a sixth embodiment will be described. Figures 2 to 7 Components that are identical to those described will be assigned the same reference numerals and will be used in conjunction with Figures 2 to 7 The aforementioned description set forth may apply identically to components having the same reference numerals.

[0144] refer to Figure 8 , an RF support plate 270 is provided, including an electrode plate portion 271, and a deformed portion 272 protruding from the bottom of the electrode plate portion 271. The deformed portion 272 may have a chamfered shape. A rod coupling portion 273 extends downward from the bottom of the deformed portion 272. A power supply rod 275 is coupled to the rod coupling portion 273 and electrically connected thereto.

[0145] The grounding member 3290 is an electrical grounding component. The grounding member 3290 has a through-hole at its center, through which the power supply rod 275 passes. A guide portion 3292 extends from the inner diameter of the through-hole formed in the center of the grounding member 3290 toward the air gap 285. The guide portion 3292 is formed to surround the power supply rod 275 and further includes an extension 3293. The extension 3293 is spaced apart from and surrounds the deformed portion 272 of the RF support plate 270. The extension 3293 prevents RF energy collected in the deformed portion 272 from being radiated to the plate portion 3291 of the grounding member 3290. Thus, the guide portion 3292 serves to uniformly transmit RF energy upward while preventing RF energy from transmitting to the plate portion 3291 and causing noise. However, as described above, there is a trade-off between the energy loss caused by the guide portion 3292 during RF energy transmission and the advantages of the present inventive concept. However, the height or thickness of the guide portion 3292 may be appropriately designed in consideration of a trade-off relationship with energy loss.

[0146] exist Figure 8In this case, "A" represents the gap between the bottom surface of the electrode plate portion 271 of the RF support plate 270 and the upper surface of the plate portion 3291 of the ground member 3290. "B" refers to the diameter of the electrode plate portion 271. "C" refers to the separation gap between the inner wall of the guiding portion 3292 and the power supply rod 275. "D" represents the inner diameter of the guiding portion 3292. "E" represents the diameter of the power supply rod 275. The inventors of the inventive concept wanted to set the specific dimensions of the components constituting the substrate support unit. The specific dimensions of the components constituting the substrate support unit are defined as follows.

[0147] <Dimension Definition>

[0148] 1. D < A, and A is 10 mm or more larger than D.

[0149] 2. B = A x (5 to 8). Considering impedance efficiency and size, A is 1 / 8 to 1 / 5 times the diameter B of the electrode plate portion 271 of the RF support plate 270.

[0150] 3. C x (6 to 8) < E

[0151] 4. Considering the frequency and power of the RF power, E is determined within the range of 20 mm to 40 mm.

[0152] 5. (2 x C) + E = D

[0153] When the deformed portion 272 is set in a chamfered shape, the chamfer distance x or y (which is the chamfer value) can be defined as follows.

[0154] C (mm) < chamfer distance x or y (mm) < C x 20 (mm)

[0155] Here, the chamfer range is between 0° and 90°. At the same time, when the deformed portion 272 is set in a chamfered shape, the x value and the y value can be different from each other.

[0156] Figure 9 is a cross-sectional view of the substrate support unit in the Figure 2 substrate processing apparatus according to the seventh embodiment. Hereinafter, the substrate support unit according to the seventh embodiment will be described with reference to Figure 9 Components that are the same as those described above with reference to Figures 2 to 8 will be assigned the same reference numerals, and the foregoing description incorporated Figures 2 to 8 with the description can be applied identically to components with the same reference numerals.

[0157] Referring to Figure 9 , an RF support plate 1270 including an electrode plate portion 1271 is provided, and a power supply rod 275 is connected to the RF support plate 1270.

[0158] An air gap 1285 is formed below the RF support plate 1270. The air gap 1285 is formed between the RF support plate 1270 and a ground member 4290 which will be described below. The air gap 1285 can be surrounded by an insulating cover 280. The air gap 1285 electrically insulates the RF support plate 1270 and the ground member 4290.

[0159] The ground member 4290 is an electrically grounded component. The ground member 4290 has a through hole at its center through which a power supply rod 275 passes. A guiding portion 4292 extends from the inner diameter of the through hole formed at the center of the ground member 4290 toward the air gap 1285. The guiding portion 4292 is formed to surround the power supply rod 275.

[0160] The upper surface of the plate portion 4291 of the ground member 4290 may be formed such that the inner region and the outer region have different heights. The inner region is the region near the power supply rod 275 and the portion where the through hole is formed, and the outer region is the region near the insulating cover 280. For example, the height of the upper surface of the plate portion 4291 may decrease from the inner region toward the outer region. That is, the height h2 of the inner region may be greater than the height h1 of the outer region.

[0161] Figure 9 The shape of the upper surface of the plate portion 4291 shown can be applied together with Figures 3 to 8 the embodiment shown.

[0162] In addition to the effect of improving the RF power transfer efficiency by optimizing the impedance of the portion where a high electric field strength is formed, an effect of improving the etching rate (ER) uniformity of each region of the substrate W by controlling the electric field uniformity of the CCP electrode and / or an effect of high SCD resistance are obtained. Further, according to an embodiment of the inventive concept, when RF power is fed, eddy currents formed in the region of the ground member 4291 corresponding to the RF support plate 1270 can be minimized.

[0163] In Figure 9 ,"A" represents the gap between the bottom surface of the electrode plate portion 1271 of the RF support plate 1270 and the upper surface of the plate portion 4291 of the ground member 4290. "B" refers to the diameter of the electrode plate portion 1271. "C" refers to the separation gap between the inner wall of the guiding portion 4292 and the power supply rod 275. "D" represents the inner diameter of the guiding portion 4292. "E" represents the diameter of the power supply rod 275. The inventors of the inventive concept want to set the specific dimensions of the components constituting the substrate support unit. The specific dimensions of the components constituting the substrate support unit are defined as follows.

[0164] <Dimension Definition>

[0165] 1. D < A, and A is 10 mm or more greater than D.

[0166] 2. B=A x (5 to 8), where A is 1 / 8 to 1 / 5 times the diameter B of the electrode plate portion 1271 of the RF support plate 1270 in consideration of impedance efficiency and size.

[0167] 3.C x (6 to 8) <E

[0168] 4. Taking into account the frequency and power of RF power, E is determined within the range of 20 mm to 40 mm.

[0169] 5. (2 x C) + E = D

[0170] Figure 10 Shows the basis Figure 7 The simulation results of RF energy of the substrate supporting unit of the fifth embodiment of the invention are shown. Figure 10 , it can be seen that the field intensity concentrated on the central portion of the wafer is relatively low, and thus serves as an important factor capable of adjusting process quality and more effectively avoiding the resonance point of the RF wavelength.

[0171] Figure 11 The eighth embodiment is set in Figure 2 The following is a cross-sectional view of a substrate support unit in a substrate processing device. Figure 11 A substrate supporting unit according to an eighth embodiment will be described. Figures 2 to 9 Components that are identical to those described will be assigned the same reference numerals and will be used in conjunction with Figures 2 to 9 The aforementioned description set forth may apply identically to components having the same reference numerals.

[0172] refer to Figure 11 , the guide portion 5292 is provided as a component separate from the plate portion 5291 of the grounding member 5290 and is coupled to the plate portion 5291. The coupling portion 5298 may be formed in a through-hole of the plate portion 5291, and the guide portion 5292 may be coupled to the coupling portion 5298. The guide portion 5292 may be formed of a conductive material. The guide portion 5292 may be formed of a material including metal. The guide portion 5292 may be grounded. For example, the guide portion 5292 may be electrically connected to the plate portion 5291. The plate portion 5291 is formed of a conductive material. The plate portion 5291 may be independently grounded, or may be electrically connected to the chamber 100. The chamber 100 may be grounded.

[0173] Will refer to it again Figure 2 The following description is given.

[0174] Reference again Figure 2The showerhead unit 300 may disperse the gas supplied from above. In addition, the showerhead unit 300 may allow the gas supplied by the gas supply unit 400 to be uniformly supplied into the processing space 102. The showerhead unit 300 includes a showerhead 310 and a gas injection plate 320.

[0175] The shower head 310 is disposed below the gas injection plate 320. The shower head 310 is spaced downwardly from the upper surface of the chamber 100 by a predetermined distance. The shower head 310 is located above the substrate support unit 200. A predetermined space is formed between the shower head 310 and the upper surface of the chamber 100. The shower head 310 can be configured to have a plate shape having a constant thickness. The bottom surface of the shower head 310 can be anodized to prevent arcing caused by plasma. The cross-section of the shower head 310 can have the same shape and cross-sectional area as the cross-section of the substrate support unit 200. The shower head 310 has a plurality of gas supply holes 312 formed therein. The gas supply holes 312 can be vertically formed to pass through the upper and lower surfaces of the shower head 310.

[0176] The shower head 310 may be formed of a material that generates a compound by reacting with plasma generated by the gas supplied by the gas supply unit 400. For example, the shower head 310 may be formed of a material that generates a compound by reacting with ions having the highest electronegativity among ions included in the plasma. For example, the shower head 310 may be formed of a material including silicon (Si).

[0177] The gas injection plate 320 is disposed above the showerhead 310. The gas injection plate 320 is spaced a predetermined distance from the upper surface of the chamber 100. The gas injection plate 320 can diffuse the gas supplied from above. The gas injection plate 320 can have a gas introduction hole 322 formed therein. The gas introduction hole 322 can be formed in a position corresponding to the above-mentioned gas supply hole 312. The gas introduction hole 322 can be fluidically connected to the gas supply hole 312. The gas supplied from above the showerhead unit 300 can pass through the gas introduction hole 322 and the gas supply hole 312 in sequence and can be supplied to the bottom of the showerhead 310. The gas injection plate 320 can include a metal material. The gas injection plate 320 can be grounded. The gas injection plate 320 can be grounded and can serve as an upper electrode.

[0178] The insulating ring 380 is disposed around the showerhead 310 and the gas injection plate 320. The insulating ring 380 may have a circular ring shape as a whole and may be formed of a non-metallic material.

[0179] The gas supply unit 400 supplies process gas into the chamber 100. The gas supply unit 400 includes a gas supply nozzle 410, a gas supply line 420, and a gas reservoir 430. The gas supply nozzle 410 may be disposed at the center of the top of the chamber 100. The gas supply nozzle 410 has an injection hole formed in its bottom. The process gas supplied through the gas supply nozzle 410 is supplied to the processing space of the chamber 100 through the showerhead unit 300. The gas supply line 420 connects the gas supply nozzle 410 and the gas reservoir 430. The gas supply line 420 supplies the process gas stored in the gas reservoir 430 to the gas supply nozzle 410. The valve 420 is disposed in series with the gas supply line 421. The valve 421 opens and closes the gas supply line 420 and adjusts the flow rate of the process gas supplied through the gas supply line 420.

[0180] The gas supplied by the gas supply unit 400 may be excited into a plasma state by the plasma source. The gas supplied by the gas supply unit 400 may be a fluorine-containing gas. For example, the gas supplied by the gas supply unit 400 may be carbon tetrafluoride.

[0181] The plasma source excites the processing gas in the chamber 100 into plasma. In an embodiment of the present inventive concept, a capacitively coupled plasma (CCP) source is used as the plasma source. The capacitively coupled plasma source may include an upper electrode and a lower electrode in the chamber 100. The upper electrode and the lower electrode may be arranged vertically parallel to each other in the chamber 100. One of the opposing electrodes may be applied with RF power, while the other may be grounded. An electromagnetic field may be formed in the space between the opposing electrodes, and the processing gas supplied into the space may be excited into plasma. The process of processing the substrate W is performed by using plasma. According to one embodiment, the upper electrode may be implemented by a showerhead unit 300, and the lower electrode may be implemented by a combination of a main body plate 230 and an RF support plate 240. RF power may be applied to the lower electrode, and the upper electrode may be grounded. Alternatively, RF power may be applied to both the upper electrode and the lower electrode. Thus, an electromagnetic field is generated between the upper electrode and the lower electrode. The generated electromagnetic field excites the processing gas in the chamber 100 into plasma.

[0182] The liner unit (not shown) prevents the inner wall of the chamber 100 and the substrate support unit 200 from being damaged during the process. The liner unit (not shown) prevents impurities generated during the process from being deposited on the inner wall of the chamber 100 and the substrate support unit 200. The liner unit (not shown) includes an inner liner (not shown) and an outer liner (not shown).

[0183] An outer liner (not shown) is provided on the inner wall of the chamber 100. The outer liner (not shown) has a space that is open at the top and the bottom. The outer liner (not shown) may have a hollow cylindrical shape. The outer liner (not shown) may have a radius corresponding to the inner surface of the chamber 100. The outer liner (not shown) is provided along the inner surface of the chamber 100. The outer liner (not shown) may be formed of an aluminum material. The outer liner (not shown) protects the inner surface of the chamber 100. In the process of exciting the process gas, arc discharge may occur inside the chamber 100. The arc discharge may damage the chamber 100. The outer liner (not shown) protects the inner surface of the chamber 100, thereby preventing the inner surface of the chamber 100 from being damaged by the arc discharge.

[0184] An inner liner (not shown) surrounds the substrate support unit 200. The inner liner (not shown) has an annular shape. The inner liner (not shown) surrounds the insulating cover 280. The inner liner (not shown) can be formed of an aluminum material. The inner liner (not shown) protects the outer surface of the substrate support unit 200.

[0185] The baffle unit 500 is located between the inner wall of the chamber 100 and the substrate support unit 200. The baffle unit 500 has a circular ring shape. The baffle unit 500 has a plurality of through holes formed therein. Gas supplied into the chamber 100 passes through the through holes of the baffle unit 500 and is released through the exhaust holes 104. The flow of gas can be controlled according to the shape of the baffle unit 500 and the shape of the through holes.

[0186] A controller (not shown) may control the overall operation of the substrate processing apparatus 1000. The controller (not shown) may include a central processing unit (CPU), a read-only memory (ROM), and a random access memory (RAM). The CPU performs a desired process, such as etching, according to various types of schemes stored in a storage area of the memory.

[0187] Control information of the equipment used for process conditions is input in the scheme, such as process time, process pressure, RF power or voltage, flow rate of various gases, temperature in the chamber (electrode temperature, chamber side wall temperature and electrostatic chuck temperature), cooler temperature, etc. At the same time, the scheme representing the program or process conditions can be stored in a non-transitory computer-readable medium. A non-transitory computer-readable medium refers to a medium that stores data semi-permanently and can be read by a computer, rather than a medium that stores data for a short period of time (for example, a resistor, cache or memory). Specifically, the various applications or programs mentioned above can be stored in non-transitory computer-readable media such as CDs, DVDs, hard disks, Blu-ray discs, USBs, memory cards and ROMs.

[0188] While the power supply rods have been described as being coupled to an RF support plate disposed below the main body plate, the main body plate and the RF support plate can be a single component formed from a conductive material rather than separate components. For example, the RF support plate can be formed by deforming the lower portion of the main body plate to create channels through which cooling fluid circulates. In other words, in a configuration used as a lower electrode in a substrate support unit, the technical configuration of the present invention can be applied to the portion connected to the power supply rod for supplying RF power.

[0189] According to various embodiments of the inventive concept, a substrate supporting unit and a substrate treating apparatus may effectively treat a substrate.

[0190] According to various embodiments of the inventive concept, a substrate supporting unit and a substrate treating apparatus may minimize concentration of an electric field on an area where an electrode and a power supply rod are connected and may minimize electrical impedance.

[0191] According to various embodiments of the inventive concept, a substrate supporting unit and a substrate treating apparatus may provide an additional control factor in adjusting the density of plasma generated above a substrate.

[0192] According to various embodiments of the present inventive concept, a substrate supporting unit and a substrate processing apparatus can improve RF power transmission efficiency by optimizing the impedance of a portion where a high field strength is formed, and can improve etch rate (ER) uniformity in each region of a substrate through electric field uniformity control of a CCP electrode.

[0193] According to various embodiments of the inventive concept, a substrate supporting unit and a substrate treating apparatus may minimize eddy current formed in a region of a ground member when RF power is fed.

[0194] According to various embodiments of the inventive concept, a substrate supporting unit and a substrate treating apparatus may minimize noise caused by RF energy transferred to a ground member in a process of feeding RF power.

[0195] Effects of the present inventive concept are not limited to the above-mentioned effects, and any other effects not mentioned herein can be clearly understood from this specification and the accompanying drawings by those skilled in the art to which the present inventive concept pertains.

[0196] The above description illustrates the inventive concept. In addition, the above-mentioned contents describe embodiments of the inventive concept, and the inventive concept can be used in various other combinations, changes and environments. That is, the inventive concept can be changed or modified without departing from the scope of the inventive concept disclosed in this specification, the equivalent scope of the written disclosure and / or the technology or knowledge scope of those skilled in the art. The written embodiments describe the best state of the technical spirit for implementing the inventive concept, and various changes required for the specific application and purpose of the inventive concept can be made. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept in the disclosed embodiment state. In addition, it should be understood that the appended claims include other embodiments.

[0197] Although the inventive concept has been described with reference to the embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not limitative but illustrative.

Claims

1. A substrate supporting unit provided in an apparatus for processing a substrate using plasma, the substrate supporting unit comprising: a dielectric plate on which the substrate is placed; a lower electrode, the lower electrode being disposed below the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; as well as a grounding member disposed below the lower electrode and spaced apart from the lower electrode by an insulating member by a first gap, the grounding member comprising a plate portion, a through hole formed in the plate portion for the power supply rod to pass through, wherein the through hole has a third diameter; The lower electrode includes a deformed portion extending downward from a center of a lower surface of the lower electrode and having a diameter decreasing toward a bottom, and the power supply rod is coupled to an end portion of the deformed portion. 2 . The substrate supporting unit of claim 1 , wherein the grounding member further comprises a guide portion extending in a predetermined length from an inner diameter of the through hole and spaced apart from the power supply rod by a second gap. 3 . The substrate supporting unit of claim 2 , wherein the guide portion comprises an extension portion extending along the deformed portion and spaced apart from the deformed portion by a predetermined distance. 4 . The substrate supporting unit of claim 2 , wherein the guide portion is formed integrally with the ground member, or is formed separately from the ground member and electrically connected to the ground member. 5 . The substrate supporting unit of claim 1 , wherein the deformation portion is formed in a tapered shape having a diameter decreasing toward the bottom. 6 . The substrate supporting unit of claim 1 , wherein the deformed portion is formed in a circular shape having a vertical cross-section having a diameter that decreases toward the bottom. The substrate supporting unit of claim 1 , wherein the first diameter is five to eight times larger than the first gap. 8 . The substrate supporting unit of claim 1 , wherein the first gap is larger than the third diameter by 10 mm or more. 9 . The substrate supporting unit of claim 2 , wherein the second diameter is six to eight times the second gap.

10. A substrate supporting unit provided in an apparatus for processing a substrate using plasma, the substrate supporting unit comprising: a dielectric plate on which the substrate is placed; a lower electrode, the lower electrode being disposed below the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; as well as a grounding member disposed below the lower electrode and spaced apart from the lower electrode by an insulating member by a first gap, the grounding member comprising a plate portion, a through hole formed in the plate portion for the power supply rod to pass through, wherein the through hole has a third diameter; wherein the lower electrode includes a deformed portion extending downward from a center of a lower surface of the lower electrode and having a diameter decreasing toward a bottom, and the power supply rod is coupled to an end portion of the deformed portion, wherein the grounding member further comprises a guide portion extending in a radial direction from the inner diameter of the through hole by a predetermined length and spaced apart from the power supply rod by a second gap, and The deformed portion is formed in a circular shape, a vertical cross section of which has a diameter that decreases toward the bottom. 11 . The substrate supporting unit of claim 10 , wherein the guide portion is formed integrally with the ground member, or is formed separately from the ground member and electrically connected to the ground member. 12 . The substrate supporting unit of claim 10 , wherein the first diameter is five to eight times larger than the first gap. 13 . The substrate supporting unit of claim 10 , wherein the first gap is larger than the third diameter by 10 mm or more. 14 . The substrate supporting unit of claim 10 , wherein the second diameter is six to eight times the second gap.

15. A substrate supporting unit provided in an apparatus for processing a substrate using plasma, the substrate supporting unit comprising: a dielectric plate on which the substrate is placed; a lower electrode, the lower electrode being disposed below the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; as well as a grounding member disposed below the lower electrode and spaced apart from the lower electrode by an insulating member by a first gap, the grounding member comprising a plate portion, a through hole formed in the plate portion for the power supply rod to pass through, wherein the through hole has a third diameter; The farther away from the power pole, the larger the first gap. 16 . The substrate supporting unit of claim 15 , wherein an upper surface of the plate portion of the ground member is formed such that an inner region and an outer region have different heights. 17 . The substrate supporting unit of claim 16 , wherein the upper surface of the plate portion has a height that decreases from the inner region toward the outer region.

18. The substrate supporting unit of claim 15, further comprising: A guide portion extends in a radial direction from an inner portion of the through hole by a predetermined length and is spaced apart from the power supply rod by a second gap.

19. The substrate supporting unit of claim 15, wherein the lower electrode comprises a deformation portion extending downward from a center of a lower surface of the lower electrode and having a diameter decreasing toward a bottom, and the power supply rod is coupled to an end portion of the deformation portion.

20. An apparatus for processing a substrate, the apparatus comprising: a chamber having a processing space therein; a supporting unit configured to support the substrate in the processing space; a gas supply unit configured to supply gas into the processing space; as well as a plasma source configured to generate plasma from the gas, The support unit comprises: a dielectric plate on which the substrate is placed; a lower electrode, the lower electrode being disposed below the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; and a grounding member disposed below the lower electrode and spaced apart from the lower electrode by an insulating member by a first gap, the grounding member comprising a plate portion, a through hole formed in the plate portion for the power supply rod to pass through, wherein the through hole has a third diameter; wherein the lower electrode includes a deformed portion extending downward from a center of a lower surface of the lower electrode and having a diameter decreasing toward a bottom, and the power supply rod is coupled to an end portion of the deformed portion, The grounding member further includes a guide portion extending from the inner diameter of the through hole by a predetermined length and spaced apart from the power supply rod by a second gap, wherein the guide portion is formed integrally with the grounding member, or formed separately from the grounding member and electrically connected to the grounding member, and The farther away from the power pole, the larger the first gap.

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