Cut crystal grain bonding integrated film, method for manufacturing the same, and method for manufacturing semiconductor device

Abstract

The present invention discloses a cut grain bonding integrated film and a manufacturing method thereof. The cut grain bonding integrated film includes a substrate layer, a pressure-sensitive adhesive layer, and an adhesive layer. The pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive, having a first surface facing the substrate layer and a second surface on the opposite side thereof. The adhesive layer is an adhesive layer provided so as to cover the central portion of the second surface. The active energy ray-curable pressure-sensitive adhesive contains a (meth)acrylic resin having a polymerizable functional group, the functional group being at least one selected from an acryloyl group and a methacryloyl group, and the content of the functional group in the (meth)acrylic resin is 0.4 mmol / g or more.

Description

Technical Field

[0001] The present invention relates to a diced die bonding integrated film, a method for manufacturing the same, and a method for manufacturing a semiconductor device. Background Art

[0002] A semiconductor device is manufactured through the following processes. First, a dicing PSA film is attached to a wafer, and in this state, a dicing process of singulating the wafer into chips is performed. Thereafter, processes such as an expand process, a pickup process, a mounting process, and a die bonding process are performed.

[0003] In the manufacturing process of a semiconductor device, a film called a diced die bonding integrated film is used. This film has a structure in which a base material layer, a pressure-sensitive adhesive layer, and an adhesive layer are laminated in sequence. For example, it is used as follows. First, the surface on the adhesive layer side is attached to the wafer, and in a state where the wafer is fixed with a dicing ring, the wafer is diced. As a result, the wafer is singulated into a plurality of chips. Next, the adhesive force of the pressure-sensitive adhesive layer to the adhesive layer is weakened by irradiating the pressure-sensitive adhesive layer with active energy rays. Thereafter, the chips together with the adhesive sheets singulated from the adhesive layer are picked up from the pressure-sensitive adhesive layer. Thereafter, a semiconductor device is manufactured through a process of mounting the chips on a substrate or the like via the adhesive sheets. In addition, a laminate composed of the chips obtained through the dicing process and the adhesive sheets attached thereto is called a DAF (Die Attach Film).

[0004] As described above, a pressure-sensitive adhesive layer (dicing film) whose adhesive force is weakened by irradiation with active energy rays is called an active energy ray curable type. In contrast, a pressure-sensitive adhesive layer whose adhesive force remains constant without irradiating active energy rays in the manufacturing process of a semiconductor device is called a pressure-sensitive type. For users (mainly semiconductor device manufacturers), the diced die bonding integrated film having a pressure-sensitive type pressure-sensitive adhesive layer has the following advantages: There is no need to perform a process of irradiating active energy rays, and there is no need for equipment for this process. Patent Document 1 discloses a diced die bonding integrated film, which can be said to be an active energy ray curable type in terms of containing a component curable by active energy rays in the pressure-sensitive adhesive layer. On the other hand, it can also be said to be a pressure-sensitive type in terms of pre-irradiating only a specified portion of the pressure-sensitive adhesive layer with active energy rays so that users do not need to irradiate active energy rays in the manufacturing process of a semiconductor device.

[0005] Prior Art Documents

[0006] Patent Documents

[0007] Patent Document 1: Japanese Patent No. 4443962 Gazette Summary of the Invention

[0008] Technical Problem to be Solved by the Invention

[0009] Semiconductor devices, especially devices known as memories, are widely used in personal computers, servers, smartphones, etc., and miniaturization and high integration of circuits are required. With such miniaturization and high integration of circuits, narrowing of wiring width and distance between wirings is also being studied for circuit design on a wafer.

[0010] On the other hand, in wafer design, in order to facilitate cutting by a blade in the wafer dicing process, an area without circuits called a scribe line needs to be set between chips, and narrowing of the scribe line is also required. The wafer dicing process is performed using a blade rotating at high speed. Therefore, in order to achieve narrowing of the scribe line, a blade with a narrow width needs to be used. However, when using a blade with a narrow width (for example, a blade with a width of about 10 to 50 μm), it is sometimes impossible to sufficiently ensure the interval between chips after the wafer dicing process (hereinafter, this interval is sometimes referred to as "the width of the notch (groove)"). In the pick-up process, a phenomenon sometimes occurs in which two or more chips are picked up simultaneously (hereinafter, this phenomenon is sometimes referred to as "double mode"). If double mode occurs, the productivity decreases.

[0011] Moreover, the expansion process performed after the wafer dicing process is a process of separating the singulated chips from each other in order to expand the notch width. However, with the miniaturization of chips, the number of separated notch lines increases, resulting in dispersion of the effects of the expansion process, and thus the effects are limited.

[0012] The present invention has been completed in view of the above circumstances, and its main object is to provide a diced and bonded integrated film that can sufficiently ensure the notch width even when using a blade with a narrow width, and a method for manufacturing the same.

[0013] Means for Solving the Technical Problem

[0014] One aspect of the present invention relates to a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes: a first step of preparing a diced die bonding integrated film, the diced die bonding integrated film including a substrate layer, a pressure-sensitive adhesive layer, and an adhesive layer, the pressure-sensitive adhesive layer being a pressure-sensitive adhesive layer composed of an energy ray-curable pressure-sensitive adhesive having a first surface facing the substrate layer and a second surface opposite to the first surface, the adhesive layer being an adhesive layer provided so as to cover a central portion of the second surface of the pressure-sensitive adhesive layer; a second step of attaching a wafer to the adhesive layer of the diced die bonding integrated film and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer; a third step of singulating the wafer together with the adhesive layer and the pressure-sensitive adhesive layer into a plurality of chips by blade dicing using a blade to form a cut body; a fourth step of picking up the chips together with the adhesive sheets singulated from the adhesive layer of the cut body from the pressure-sensitive adhesive layer; and a fifth step of mounting the chips on a substrate or other chips via the adhesive sheets. The pressure-sensitive adhesive layer has a first region corresponding to the region of the adhesive layer to which the wafer is attached and a second region to which the dicing ring is attached, and the first region is a region in which the adhesive force is decreased compared with the second region due to the irradiation of energy rays. In the third step, the width of the cut (cut width) formed on the pressure-sensitive adhesive layer of the cut body by blade dicing is 75% or more with respect to the width of the blade (blade width). According to the research by the present inventors, it has been found that if the width of the cut formed on the pressure-sensitive adhesive layer of the cut body by blade dicing is 75% or more with respect to the width of the blade, it tends to be possible to suppress double patterning. Therefore, according to the above method for manufacturing a semiconductor device, the productivity can be improved.

[0015] The width of the blade (blade width) may be 10 to 50 μm. Even when using a blade with such a narrow width, it is possible to more sufficiently suppress double patterning.

[0016] The plurality of chips have a square or rectangular shape and an area of 200 mm 2 or less.

[0017] One aspect of the present invention relates to a diced die bonding integrated film. The film includes a substrate layer, a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive having a first surface facing the substrate layer and a second surface opposite to the first surface, and an adhesive layer provided so as to cover the central portion of the second surface. The pressure-sensitive adhesive layer has a first region and a second region. The first region includes at least a region corresponding to the attachment position of the wafer in the adhesive layer, and the second region is provided so as to surround the first region. The first region is a region in which the adhesive force is decreased compared to the second region due to the irradiation of active energy rays. The active energy ray-curable pressure-sensitive adhesive includes a (meth)acrylic resin having a polymerizable functional group, the functional group is at least one selected from an acryloyl group and a methacryloyl group, and the content of the functional group in the (meth)acrylic resin is 0.4 mmol / g or more.

[0018] According to the above diced die bonding integrated film, it can be suitably used in the manufacturing method of the above semiconductor device. Even when using a blade with a narrow width, the width of the cut can be sufficiently ensured. By using such a diced die bonding integrated film, double patterning can be suppressed, and as a result, the productivity can be improved.

[0019] The active energy ray-curable pressure-sensitive adhesive may further include a crosslinking agent. In the case where such a crosslinking agent is further included, the content of the crosslinking agent may be 0.1 to 15% by mass based on the total mass of the active energy ray-curable pressure-sensitive adhesive. The crosslinking agent may be a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyol having three or more hydroxyl groups in one molecule.

[0020] The adhesive layer may be composed of an adhesive composition including a (meth)acrylic copolymer containing a reactive group, a curing accelerator, and a filler.

[0021] The diced die bonding integrated film is applied to a manufacturing process of a semiconductor device including a process of singulating a wafer into a plurality of chips with an area of 200 mm 2 or less.

[0022] One aspect of the present invention relates to a method for manufacturing a cut grain-bonded integrated film. The first method of this manufacturing method sequentially includes: a step of forming a laminate on the surface of a substrate layer, the laminate including a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive and an adhesive layer formed on the surface of the pressure-sensitive adhesive layer; and a step of irradiating an active energy ray to a region of the pressure-sensitive adhesive layer included in the laminate that becomes a first region. And, the second method of this manufacturing method sequentially includes: a step of forming a pressure-sensitive adhesive layer on the surface of a substrate layer, the pressure-sensitive adhesive layer being composed of a composition whose adhesive force decreases due to irradiation with an active energy ray; a step of irradiating an active energy ray to a region of the pressure-sensitive adhesive layer that becomes a first region; and a step of laminating an adhesive layer on the surface of the pressure-sensitive adhesive layer after irradiating the active energy ray.

[0023] Advantages of the Invention

[0024] According to the present invention, there is provided a cut grain-bonded integrated film and a manufacturing method thereof that can sufficiently ensure the width of a cut even when using a blade with a narrow width. And, according to the present invention, there is provided a method for manufacturing a semiconductor device using such a cut grain-bonded integrated film. According to such a method for manufacturing a semiconductor device, double patterning can be suppressed and productivity can also be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 In Figure 1 (a) is a plan view showing an embodiment of a cut grain-bonded integrated film, Figure 1 (b) is a schematic cross-sectional view taken along line B-B shown in Figure 1 (a).

[0026] Figure 2 It is a schematic view showing a state in which a dicing ring is attached to the peripheral portion of the pressure-sensitive adhesive layer of a cut grain-bonded integrated film and a wafer is attached to the surface of the adhesive layer.

[0027] Figure 3 It is a schematic cross-sectional view of an embodiment of a semiconductor device.

[0028] Figure 4 In Figure 4 (a), Figure 4 (b), Figure 4 (c) and Figure 4 (d) are cross-sectional views schematically showing the process of manufacturing a DAF (laminate of a chip and an adhesive sheet).

[0029] Figure 5 In Figure 5 (a) is a plan view schematically showing an embodiment of a cut body, Figure 5 (b) isFigure 5 Enlarged view of part E in (a).

[0030] Figure 6 Schematically shows the manufacturing Figure 3 Cross-sectional view of the process of the semiconductor device shown.

[0031] Figure 7 Schematically shows the manufacturing Figure 3 Cross-sectional view of the process of the semiconductor device shown.

[0032] Figure 8 Schematically shows the manufacturing Figure 3 Cross-sectional view of the process of the semiconductor device shown. Detailed implementation mode

[0033] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and repeated descriptions are omitted. In addition, the present invention is not limited to the following embodiments. In this specification, (meth)acrylic acid means acrylic acid or methacrylic acid, and the same applies to other similar expressions such as (meth)acrylate.

[0034] <Dicing grain bonding integrated film>

[0035] Figure 1 (a) is a top view showing the dicing grain bonding integrated film according to the present embodiment, Figure 1 (b) is along Figure 1 Schematic cross-sectional view taken along line B-B. The dicing grain bonding integrated film 10 (hereinafter, sometimes simply referred to as "film 10".) can be suitably used for a semiconductor device manufacturing process including a process of singulating a wafer W into a plurality of chips having an area of 200 mm 2 The following area (and the subsequent pick-up process) (refer to Figure 4 (c) and Figure 4 (d)).

[0036] The film 10 sequentially includes a base material layer 1, a pressure-sensitive adhesive layer 3 having a first surface F1 facing the base material layer 1 and a second surface F2 on the side opposite to the first surface F1, and an adhesive layer 5 provided so as to cover the central portion of the second surface F2 of the pressure-sensitive adhesive layer 3. In the present embodiment, an example is shown in which a laminate of one pressure-sensitive adhesive layer 3 and an adhesive layer 5 is formed on a square base material layer 1, but the base material layer 1 may have a predetermined length (for example, 100 m or more), and the laminate of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 may be arranged at a predetermined interval in a manner of being arranged along its long side direction.

[0037] The film 10 successively includes a base material layer 1, a pressure-sensitive adhesive layer 3 having a first surface F1 facing the base material layer 1 and a second surface F2 on the side opposite to the first surface F1, and an adhesive layer 5 provided so as to cover the central portion of the second surface F2 of the pressure-sensitive adhesive layer 3. In the present embodiment, a mode in which a laminate including one pressure-sensitive adhesive layer 3 and the adhesive layer 5 is formed on a square base material layer 1 is illustrated, but the base material layer 1 may have a specified length (for example, 100 m or more), and the laminates of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 may be arranged at specified intervals in a manner of being arranged along its long side direction.

[0038] (Pressure-sensitive adhesive layer)

[0039] The pressure-sensitive adhesive layer 3 has: a first region 3a including at least a region Rw corresponding to the attachment position of the wafer W in the adhesive layer 5; and a second region 3b provided so as to surround the first region 3a. Figure 1 (a) and Figure 1 The dashed lines in (b) represent the boundary between the first region 3a and the second region 3b. The first region 3a and the second region 3b are composed of the same composition (a radiation-curable pressure-sensitive adhesive) before irradiation with actinic energy rays. The first region 3a is a region in a state where the adhesive force is decreased compared with the second region 3b due to irradiation with actinic energy rays. The second region 3b is a region to which the dicing ring DR is attached (see Figure 2 ). The second region 3b is a region not irradiated with actinic energy rays and has a high adhesive force to the dicing ring DR. The actinic energy rays may be at least one selected from ultraviolet rays, electron beams, and visible light, and may be ultraviolet rays. The irradiation amount of the actinic energy rays is, for example, 10 to 1000 mJ / cm 2 , 100 to 700 mJ / cm 2 or 100 to 500 mJ / cm 2 is sufficient.

[0040] The pressure-sensitive adhesive layer before irradiation with actinic energy rays is composed of a radiation-curable pressure-sensitive adhesive containing a (meth)acrylic resin. The second region 3b not irradiated with actinic energy rays may have the same composition as the pressure-sensitive adhesive layer before irradiation with actinic energy rays. Hereinafter, the components contained in the radiation-curable pressure-sensitive adhesive will be described in detail.

[0041] [(Meth)acrylic resin]

[0042] The active energy ray-curable pressure-sensitive adhesive contains a (meth)acrylic resin having a polymerizable functional group. In the case of containing such a (meth)acrylic resin, the functional group is at least one selected from an acryloyl group and a methacryloyl group. The content of the functional group in the (meth)acrylic resin is 0.4 mmol / g or more. The content of the functional group in the (meth)acrylic resin may be 0.5 mmol / g or more, 0.6 mmol / g or more, 0.7 mmol / g or more, 0.8 mmol / g or more, or 0.9 mmol / g or more, and may also be 2.0 mmol / g or less, 1.8 mmol / g or less, 1.5 mmol / g or less, 1.2 mmol / g or less, or 1.0 mmol / g or less. Since the content of the functional group is 0.4 mmol / g or more, it tends to be easy to form a region where the adhesive strength appropriately decreases due to the irradiation of active energy rays ( Figure 1 the first region 3a in

[0043] ). And, the incision of the pressure-sensitive adhesive layer 3 formed by crystal cutting is generated because the stress caused by curing shrinkage is released by crystal cutting, and the curing shrinkage is generated by the curing caused by the irradiation of active energy rays when forming the first region 3a of the pressure-sensitive adhesive layer 3. The inventors believe that if the curing shrinkage amount of the (meth)acrylic resin or the like in the pressure-sensitive adhesive layer 3 is large, its width (incision width) is likely to expand. Therefore, since the content of the functional group is 0.4 mmol / g or more, the curing shrinkage amount of the pressure-sensitive adhesive layer 3 becomes sufficient, and even when using a blade with a narrow width, the incision width can be sufficiently ensured. On the other hand, since the content of the functional group is 2.0 mmol / g or less, it tends to be easy to achieve excellent pick-up properties.

[0044] Here, taking the method of obtaining a (meth)acrylic resin by free radical polymerization using the solution polymerization method as an example, the synthesis method of the (meth)acrylic resin will be described in detail.

[0045] As a monomer used in synthesizing (meth)acrylic resins, as long as it is a monomer having one (meth)acryloyl group in one molecule, it is not particularly limited. Specific examples thereof include aliphatic (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isopentyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, lauryl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, stearyl (meth)acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl) succinate; alicyclic (meth)acrylates such as cyclopentyl (meth)acrylate, cyclohexyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyl (meth)acrylate, isobornyl (meth)acrylate, mono(2-(meth)acryloyloxyethyl) tetrahydrophthalate, and mono(2-(meth)acryloyloxyethyl) hexahydrophthalate; aromatic (meth)acrylates such as benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenylyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate;(2-Tetrahydrofurfuryl (meth)acrylate), N-(meth)acryloyloxyethyl hexahydrophthalimide, heterocyclic (meth)acrylates such as 2-(meth)acryloyloxyethyl-N-carbazole, caprolactone modified products thereof, ω-carboxy-polycaprolactone mono(meth)acrylate, glycidyl (meth)acrylate, α-ethyl glycidyl (meth)acrylate, α-propyl glycidyl (meth)acrylate, α-butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether and other compounds having an ethylenically unsaturated group and an epoxy group; (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, 3-(2-methyl-2-oxetanyl)propyl (meth)acrylate and other compounds having an ethylenically unsaturated group and an oxetanyl group; 2-(meth)acryloyloxyethyl isocyanate and other compounds having an ethylenically unsaturated group and an isocyanate group; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate and other compounds having an ethylenically unsaturated group and a hydroxyl group. These can be appropriately combined to obtain the target (meth)acrylic resin.;

[0046] As reaction points with the functional group-introducing compounds or crosslinking agents described later, the (meth)acrylic resin may have at least one functional group selected from hydroxyl groups, glycidyl groups (epoxy groups), amino groups, etc. As monomers for synthesizing a (meth)acrylic resin having a hydroxyl group, for example, compounds having an ethylenically unsaturated group and a hydroxyl group such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, etc. can be cited. These can be used alone or two or more of them can be used simultaneously.

[0047] Examples of monomers for synthesizing glycidyl group-containing (meth)acrylic resins include glycidyl (meth)acrylate, α-ethyl glycidyl (meth)acrylate, α-propyl glycidyl (meth)acrylate, α-butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, and other compounds having an ethylenically unsaturated group and an epoxy group. These can be used alone or two or more of them can be used simultaneously.

[0048] The (meth)acrylic resin synthesized from these monomers contains a chain-polymerizable functional group. The chain-polymerizable functional group is, for example, at least one selected from acryloyl and methacryloyl. The chain-polymerizable functional group can be introduced into the (meth)acrylic resin, for example, by reacting the (meth)acrylic resin having at least one functional group selected from hydroxyl, glycidyl group (epoxy group), amino group, etc. synthesized as described above with the following compounds (functional group-introducing compounds). That is, the content of the functional group in the (meth)acrylic resin can be adjusted by the amount of the functional group-introducing compound introduced. Specific examples of the functional group-introducing compound include 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(bisacryloxymethyl)ethyl isocyanate; acryloyl monoisocyanate compounds obtained by the reaction of a diisocyanate compound or a polyisocyanate compound and 2-hydroxyethyl (meth)acrylate or 4-hydroxybutyl (meth)acrylate; acryloyl monoisocyanate compounds obtained by the reaction of a diisocyanate compound or a polyisocyanate compound, a polyol compound, and 2-hydroxyethyl (meth)acrylate, etc. These can be used alone or two or more of them can be used simultaneously. Among these, the functional group-introducing compound can be 2-methacryloyloxyethyl isocyanate.

[0049] [Photoinitiator]

[0050] The active energy ray-curable pressure-sensitive adhesive may further contain a photoinitiator. The photoinitiator is not particularly limited as long as it is a photoinitiator that generates polymerizable active species by irradiation with active energy rays. The active energy rays may be at least one selected from ultraviolet rays, electron beams, and visible light, and may be ultraviolet rays. Examples of the photoinitiator include photo radical polymerization initiators. Here, the polymerizable active species refers to the start of a polymerization reaction by reacting with a polymerizable functional group.

[0051] Examples of the photo radical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxy ketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; α-amino ketones such as 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one and 1,2-methyl-1-[4-(methylthio)phenyl]-2-morpholinylpropan-1-one; oxime esters such as 1-[4-(phenylthio)phenyl]-1,2-octanedione-2-(benzoyl)oxime; phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; 2,4,5-triaryl imidazole dimers such as 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-bis(methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, and 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer; benzophenone compounds such as benzophenone, N,N,N',N'-tetramethyl-4,4'-diaminobenzophenone, N,N,N',N'-tetraethyl-4,4'-diaminobenzophenone, and 4-methoxy-4'-dimethylaminobenzophenone; quinone compounds such as 2-ethylanthraquinone, phenanthraquinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, and 2,3-dimethylanthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methyl benzoin, and ethyl benzoin; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine and 1,7-bis(9,9'-acridinylheptane); N-phenylglycine, coumarin, etc.

[0052] The content of the photopolymerization initiator in the active energy ray-curable pressure-sensitive adhesive may be 0.1 to 30 parts by mass, 0.3 to 10 parts by mass, or 0.5 to 5 parts by mass relative to 100 parts by mass of the content of the (meth)acrylic resin. If the content of the photopolymerization initiator is 0.1 part by mass or more, the pressure-sensitive adhesive layer is sufficiently cured after irradiation with active energy rays and tends to be less likely to cause pick-up defects. If the content of the photopolymerization initiator is 30 parts by mass or less, it tends to be possible to prevent contamination of the adhesive layer (transfer of the photopolymerization initiator to the adhesive layer).

[0053] [Crosslinking agent]

[0054] The active energy ray-curable pressure-sensitive adhesive may further contain a crosslinking agent. The crosslinking agent is used, for example, for the purpose of controlling the elastic modulus and / or tackiness of the pressure-sensitive adhesive layer. The crosslinking agent may be a compound having two or more functional groups in one molecule that can react with at least one functional group selected from hydroxyl groups, glycidyl groups, amino groups, etc. possessed by the (meth)acrylic resin. Examples of the bonds formed by the reaction of the crosslinking agent with the (meth)acrylic resin include ester bonds, ether bonds, amide bonds, amide bonds, urethane bonds, urea bonds, etc.

[0055] In the present embodiment, the crosslinking agent may be a polyfunctional isocyanate having two or more isocyanate groups in one molecule. If such a polyfunctional isocyanate is used, it can easily react with hydroxyl groups, glycidyl groups, amino groups, etc. possessed by the (meth)acrylic resin to form a strong crosslinked structure.

[0056] Examples of the polyfunctional isocyanate having two or more isocyanate groups in one molecule include isocyanate compounds such as 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyl diphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate, etc.

[0057] The crosslinking agent may be a reaction product of a polyfunctional isocyanate and a polyol having two or more hydroxyl groups in one molecule (an isocyanate group-containing oligomer). Examples of the polyol having two or more hydroxyl groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, trimethylolpropane, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, 1,3-cyclohexanediol, etc.

[0058] Among these, the crosslinking agent can be a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyol having three or more hydroxyl groups in one molecule (an isocyanate group-containing oligomer). By using such an isocyanate group-containing oligomer as the crosslinking agent, a dense crosslinked structure of the pressure-sensitive adhesive layer 3 is formed, whereby it becomes possible to sufficiently suppress the adhesion of the pressure-sensitive adhesive to the adhesive layer 5 in the picking process.

[0059] The content of the crosslinking agent in the active energy ray-curable pressure-sensitive adhesive can be appropriately set according to the cohesion, elongation at break, adhesion to the adhesive layer, etc. required for the pressure-sensitive adhesive layer. Specifically, the content of the crosslinking agent can be, for example, 3 to 30 parts by mass, 4 to 15 parts by mass, or 7 to 10 parts by mass relative to 100 parts by mass of the content of the (meth)acrylic resin. By setting the content of the crosslinking agent within the above range, it becomes possible to balance and satisfactorily have both the characteristics required for the pressure-sensitive adhesive layer in the die cutting process and the characteristics required for the pressure-sensitive adhesive layer in the die bonding process, and excellent pick-up properties can also be achieved.

[0060] If the content of the crosslinking agent is 3 parts by mass or more relative to 100 parts by mass of the content of the (meth)acrylic resin, the formation of the crosslinked structure is less likely to be insufficient, and in the picking process, the interfacial adhesion force with the adhesive layer sufficiently decreases, so that it is less likely to cause problems during picking. On the other hand, if the content of the crosslinking agent is 30 parts by mass or less relative to 100 parts by mass of the content of the (meth)acrylic resin, the pressure-sensitive adhesive layer is less likely to become too hard, and the chip is less likely to peel off in the expansion process.

[0061] The content of the crosslinking agent relative to the total mass of the active energy ray-curable pressure-sensitive adhesive can be, for example, 0.1 to 15% by mass, 3 to 15% by mass, or 5 to 15% by mass. Since the content of the crosslinking agent is 0.1% by mass or more, it is easy to form a region (the first region 3a) where the adhesive strength appropriately decreases due to the irradiation of active energy rays. On the other hand, since the content of the crosslinking agent is 15% by mass or less, it is likely to achieve excellent pick-up properties.

[0062] The thickness of the pressure-sensitive adhesive layer 3 can be appropriately set according to the conditions (temperature, tension, etc.) of the expansion process, and can be, for example, 1 to 200 μm, 5 to 50 μm, or 10 to 20 μm. If the thickness of the pressure-sensitive adhesive layer 3 is 1 μm or more, the adhesiveness is less likely to be insufficient, and if it is 200 μm or less, the incision width tends to become wider during expansion (the stress is not relieved when the pin is pushed up), and the picking is less likely to be insufficient.

[0063] The pressure-sensitive adhesive layer 3 is formed on the base material layer 1. As a method for forming the pressure-sensitive adhesive layer 3, a known method can be adopted. For example, a laminate of the base material layer 1 and the pressure-sensitive adhesive layer 3 can be formed by a double-layer coextrusion method, or a varnish of an active energy ray-curable pressure-sensitive adhesive (varnish for forming the pressure-sensitive adhesive layer) can be prepared, coated on the surface of the base material layer 1, or the pressure-sensitive adhesive layer 3 can be formed on a film that has been subjected to a release treatment and transferred to the base material layer 1.

[0064] The varnish of the active energy ray-curable pressure-sensitive adhesive (varnish for forming the pressure-sensitive adhesive layer) is an organic solvent that can dissolve (meth)acrylic resins, photoinitiators, and crosslinking agents and can be volatilized by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; polyol alkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; polyol alkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, and diethylene glycol monoethyl ether acetate; amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These organic solvents can be used alone or two or more of them can be used simultaneously.

[0065] Among these, from the viewpoints of solubility and boiling point, the organic solvent can be, for example, at least one selected from the group consisting of toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N,N-dimethylacetamide. The solid content concentration of the varnish is usually 10 to 60% by mass.

[0066] (Base material layer)

[0067] The base material layer 1 can use known polymer sheets or films, and is not particularly limited under low-temperature conditions as long as the expansion process can be carried out. Specific examples of the base material layer 1 include polyolefins such as crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, and polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylate (random, alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethanes, polyesters such as polyethylene terephthalate and polyethylene naphthalate, polycarbonates, polyimides, polyetheretherketones, polyimides, polyetherimides, polyamides, wholly aromatic polyamides, polyphenylene sulfides, aromatic polyamides (paper), glass, glass cloth, fluororesins, polyvinyl chloride, polyvinylidene chloride, cellulose-based resins, silicone resins, or mixtures obtained by mixing these with plasticizers, or cured products crosslinked by electron beam irradiation.

[0068] The base material layer 1 has a surface mainly composed of at least one resin selected from the group consisting of polyethylene, polypropylene, polyethylene-propylene random copolymer, and polyethylene-propylene block copolymer, and can be the layer in contact with the pressure-sensitive adhesive layer 3 on this surface. From the viewpoints of properties such as Young's modulus, stress relaxation property, and melting point, price, waste recycling after use, etc., these resins can also be good base materials. The base material layer 1 can be a single layer, and according to needs, can have a multi-layer structure formed by laminating layers composed of different materials. From the viewpoint of controlling the adhesion to the pressure-sensitive adhesive layer 3, the base material layer 1 can be subjected to surface roughening treatments such as matting treatment and corona treatment on its surface.

[0069] (Adhesive layer)

[0070] In the adhesive layer 5, an adhesive composition constituting a known die bonding film can be applied. Specifically, the adhesive composition constituting the adhesive layer 5 can contain a (meth)acrylic acid copolymer containing a reactive group, a curing accelerator, and a filler. Due to the adhesive layer 5 containing these components, it tends to have the following characteristics: excellent adhesion between the chip / substrate and between chips, and can also impart electrode embedding property, wire embedding property, etc., and can be bonded at low temperature during the die bonding process, obtain excellent curing in a short time, and have excellent reliability after being molded with a sealant.

[0071] The (meth)acrylic acid copolymer containing a reactive group can be, for example, a (meth)acrylic acid copolymer containing an epoxy group. The (meth)acrylic acid copolymer containing an epoxy group can be a copolymer obtained using 0.5 to 6% by mass of glycidyl (meth)acrylate as a raw material with respect to the resulting copolymer. When the content of glycidyl (meth)acrylate is 0.5% by mass or more, high adhesiveness is easily obtained. On the other hand, by setting it to 6% by mass or less, gelation tends to be suppressed. The monomers constituting the remaining part of the (meth)acrylic acid copolymer containing a reactive group can be, for example, (meth)acrylic acid alkyl esters having an alkyl group with 1 to 8 carbon atoms such as (meth)acrylic acid methyl ester, styrene, acrylonitrile, etc. Among these, the monomers constituting the remaining part of the (meth)acrylic acid copolymer containing a reactive group can be ethyl (meth)acrylate and / or butyl (meth)acrylate. The mixing ratio can be adjusted in consideration of the Tg of the (meth)acrylic acid copolymer containing a reactive group. When the Tg is -10°C or higher, the viscosity of the adhesive layer 5 in the B-stage state tends to be suppressed from becoming too high, and the operability tends to be excellent. In addition, the glass transition point (Tg) of the (meth)acrylic acid copolymer containing an epoxy group is, for example, 30°C or lower. The polymerization method is not particularly limited, and examples include bead polymerization, solution polymerization, etc. As a commercially available (meth)acrylic acid copolymer containing an epoxy group, for example, HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation) can be cited.

[0072] From the viewpoints of adhesiveness and heat resistance, the weight average molecular weight of the (meth)acrylic acid copolymer containing an epoxy group can be 100,000 or more, and can also be 300,000 to 3,000,000 or 500,000 to 2,000,000. When the weight average molecular weight is 3,000,000 or less, the filling property between the chip and the substrate supporting the chip can be suppressed from decreasing. The weight average molecular weight is a polystyrene conversion value obtained by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene.

[0073] As the curing accelerator, for example, tertiary amines, imidazoles, quaternary ammonium salts, etc. can be cited. As specific examples of the curing accelerator, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate can be cited. These can be used alone or two or more of them can be used simultaneously.

[0074] The filler can be an inorganic filler. As specific examples of the inorganic filler, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silica, amorphous silica can be cited. These can be used alone or two or more of them can be used simultaneously.

[0075] The adhesive composition may further contain an epoxy resin and an epoxy resin curing agent. Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, diglycidyl ether of biphenol, diglycidyl ether of naphthalene diol, diglycidyl ether of phenols, diglycidyl ether of alcohols, and alkyl-substituted products, halides, hydrides, etc. of these, difunctional epoxy resins such as phenol novolac type epoxy resin, etc. Further, other commonly known epoxy resins such as polyfunctional epoxy resins and epoxy resins containing heterocycles can be applied. These can be used alone or in combination of two or more. In addition, within the range not impairing the properties, components other than the epoxy resin can be contained as impurities.

[0076] As an epoxy resin curing agent, for example, a phenol resin obtained by reacting a phenol compound with a xylylene compound as a divalent linking group in the absence or presence of an acid catalyst can be cited. Examples of the phenol compound used for manufacturing the phenol resin include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, o-n-propylphenol, m-n-propylphenol, p-n-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, o-n-butylphenol, m-n-butylphenol, p-n-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-xylenol, 2,6-xylenol, 3,5-xylenol, 2,4,6-trimethylphenol, resorcinol, catechol, hydroquinone, 4-methoxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p-chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol and the like. These phenol compounds can be used alone or in combination of two or more. As the divalent linking group, that is, the xylylene compound, used for manufacturing the phenol resin, the following xylylene dihalides, xylylene diglycols and their derivatives can be used. That is, specific examples of the xylylene compound include α,α'-dichloro-p-xylene, α,α'-dichloro-m-xylene, α,α'-dichloro-o-xylene, α,α'-dibromo-p-xylene, α,α'-dibromo-m-xylene, α,α'-dibromo-o-xylene, α,α'-diiodo-p-xylene, α,α'-diiodo-m-xylene, α,α'-diiodo-o-xylene, α,α'-dihydroxy-p-xylene, α,α'-dihydroxy-m-xylene, α,α'-dihydroxy-o-xylene, α,α'-dimethoxy-p-xylene, α,α'-dimethoxy-m-xylene, α,α'-dimethoxy-o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α,α'-diethoxy-o-xylene, α,α'-di-n-propoxy-p-xylene, α,α'-di-n-propoxy-m-xylene, α,α'-di-n-propoxy-o-xylene, α,α'-diisopropoxy-p-xylene, α,α'-diisopropoxy-m-xylene, α,α'-diisopropoxy-o-xylene, α,α'-di-n-butoxy-p-xylene, α,α'-di-n-butoxy-m-xylene, α,α'-di-n-butoxy-o-xylene, α,α'-diisobutoxy-p-xylene, α,α'-diisobutoxy-m-xylene, α,α'-diisobutoxy-o-xylene, α,α'-di-tert-butoxy-p-xylene, α,α'-di-tert-butoxy-m-xylene, α,α'-di-tert-butoxy-o-xylene and the like. These can be used alone or in combination of two or more at the same time.

[0077] When reacting a phenolic compound with a xylylene compound, mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid, polyphosphoric acid, etc.; organic carboxylic acids such as dimethyl sulfate, diethyl sulfate, p-toluenesulfonic acid, methanesulfonic acid, ethanesulfonic acid, etc.; superacids such as trifluoromethanesulfonic acid; strongly acidic ion exchange resins such as alkane sulfonic acid type ion exchange resins; super-strongly acidic ion exchange resins such as perfluoroalkane sulfonic acid type ion exchange resins (trade name: Nafion, manufactured by DuPont, "Nafion" is a registered trademark); natural and synthetic zeolites; acidic catalysts such as activated clay (acidic clay), etc. are used, and the reaction is carried out at 50 to 250 °C until the xylylene compound as a raw material substantially disappears and the reaction composition becomes constant, whereby a phenolic resin can be obtained. The reaction time can be appropriately set according to the raw materials and reaction temperature. For example, it can be set to about 1 hour to 15 hours, and the reaction composition can be determined while tracking by GPC (gel permeation chromatography), etc.

[0078] The thickness of the adhesive layer 5 is, for example, 1 to 300 μm, 5 to 150 μm, or 10 to 100 μm. If the thickness of the adhesive layer 5 is 1 μm or more, the adhesiveness tends to be more excellent. On the other hand, if it is 300 μm or less, the divisibility and pick-up property during expansion tend to be more excellent.

[0079] <Manufacturing method of diced crystal bonding integrated film>

[0080] The manufacturing method of the film 10 successively includes: a step of manufacturing a laminate on the surface of the substrate layer 1, the laminate including a pressure-sensitive adhesive layer composed of an energy ray-curable pressure-sensitive adhesive whose adhesive force decreases due to irradiation with active energy rays and an adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer; and a step of irradiating the region of the pressure-sensitive adhesive layer included in the laminate that becomes the first region 3a with active energy rays. The irradiation amount of the active energy rays to the region that becomes the first region 3a is, for example, 10 to 1000 mJ / cm 2 , 100 to 700 mJ / cm 2 or 100 to 500 mJ / cm 2 is sufficient. This manufacturing method is a method of first manufacturing a laminate of a pressure-sensitive adhesive layer and an adhesive layer 5, and then irradiating a specific region of the pressure-sensitive adhesive layer with active energy rays.

[0081] <Semiconductor device and its manufacturing method>

[0082] Figure 3is a cross-sectional view schematically showing a semiconductor device according to this embodiment. The semiconductor device 100 shown in this figure includes a substrate 70; four chips S1, S2, S3, and S4 stacked on the surface of the substrate 70; wires W1, W2, W3, and W4 electrically connecting electrodes (not shown) on the surface of the substrate 70 to the four chips S1, S2, S3, and S4; and a sealing layer 50 that seals these components.

[0083] The substrate 70 is, for example, an organic substrate, or may be a metal substrate such as a lead frame. From the viewpoint of suppressing warping of the semiconductor device 100, the thickness of the substrate 70 may be, for example, 70 to 140 μm or 80 to 100 μm.

[0084] The four chips S1, S2, S3, and S4 are stacked via a cured product 5C of an adhesive sheet 5P. The shape of the chips S1, S2, S3, and S4 in plan view is, for example, square or rectangular. The area of the chips S1, S2, S3, and S4 may be, for example, 200 mm 2 Hereinafter, 150 mm 2 Hereinafter, 100 mm 2 Hereinafter, 50 mm 2 Hereinafter, 30 mm 2 Hereinafter, 20 mm 2 Hereinafter, 10 mm 2 Hereinafter, or 9 mm 2 Hereinafter, it may be 0.1 to 200 mm 2 0.1 to 150 mm 2 0.1 to 100 mm 2 0.1 to 50 mm 2 0.1 to 30 mm 2 0.1 to 20 mm 2 0.1 to 10 mm2 or 0.1 to 9 mm 2 . The length of one side of the chips S1, S2, S3, and S4 may be, for example, 0.1 to 20 mm, 0.1 to 15 mm, 0.1 to 10 mm, 0.1 to 8 mm, 0.1 to 6 mm, 0.1 to 3 mm, 0.1 to 2 mm, or 0.1 to 1 mm. The thickness of the chips S1, S2, S3, and S4 may be, for example, 10 to 170 μm or 25 to 100 μm. In addition, the length of one side of the four chips S1, S2, S3, and S4 may be the same or different from each other, and the same applies to the thickness.

[0085] The manufacturing method of the semiconductor device 100 includes: a first step of preparing the above-mentioned film 10; a second step of attaching the wafer W to the adhesive layer 5 of the film 10 and attaching the dicing ring DR to the second surface F2 of the pressure-sensitive adhesive layer 3; a third step of singulating the wafer W together with the adhesive layer 5 and the pressure-sensitive adhesive layer 3 into a plurality of chips S by dicing the wafer W using a blade to form a cut body 20; (dicing step); picking up the DAF8 (a laminate of the chip S1 and the adhesive sheet 5P, refer to Figure 4 (d)) from the first region 3a of the pressure-sensitive adhesive layer 3 of the cut body 20; and a fifth step of mounting the chip S1 on the substrate 70 via the adhesive sheet 5P.

[0086] Refer to Figure 4 (a), Figure 4 (b), Figure 4 (c), Figure 4 (d) and Figure 5 (a) to illustrate an example of the manufacturing method of the DAF8. First, prepare the above-mentioned film 10. As Figure 4 (a) and Figure 4 (b) show, attach the film 10 in such a way that the adhesive layer 5 contacts one surface of the wafer W. And attach the dicing ring DR to the second surface F2 of the pressure-sensitive adhesive layer 3.

[0087] Next, dice the wafer W, the adhesive layer 5, and the pressure-sensitive adhesive layer 3 by using a blade for dicing. Thereby, as Figure 4 (c) and Figure 5 (a) show, the wafer W together with the adhesive layer 5 and the pressure-sensitive adhesive layer 3 is singulated into chips S. The adhesive layer 5 is also singulated into adhesive sheets 5P. Thus, the cut body 20 is formed. Additionally, the wafer W can be thinned by grinding before dicing the wafer W.

[0088] By cutting the crystal with the above-mentioned blade, a cut is formed in the pressure-sensitive adhesive layer 3 of the cut body 20. The width of the cut formed in the pressure-sensitive adhesive layer 3 of the cut body 20 by cutting the crystal with the blade may be 75% or more, 78% or more, or 80% or more with respect to the blade width. By setting such a cut width, double mode can be suppressed, and as a result, the productivity can be improved. The pressure-sensitive adhesive layer 3 sometimes shrinks due to crystal cutting, that is, by more than 100%. The width of the cut formed in the pressure-sensitive adhesive layer 3 of the cut body 20 by cutting the crystal with the blade may be 160% or less or 150% or less with respect to the blade width. The cut formed by crystal cutting is generated because the stress caused by curing shrinkage is released by crystal cutting, and the curing shrinkage is generated by curing caused by active energy ray irradiation when the first region 3a of the pressure-sensitive adhesive layer 3 is formed. The present inventors believe that if the amount of curing shrinkage of a (meth)acrylic resin or the like in the pressure-sensitive adhesive layer 3 is large, its width (cut width) is likely to expand. The amount of curing shrinkage of the above-mentioned cut crystal bonding integrated film is sufficient, and by using this film, a cut width satisfying the above requirements can be formed. In addition, regarding the cut width, the distance between the pressure-sensitive adhesive layers between adjacent chips is measured at a plurality of positions (at least 3 positions) using an optical microscope, and the average value of these can be applied.

[0089] In the production of a cut crystal film (pressure-sensitive adhesive layer), when a pressing treatment such as pressing the pressure-sensitive adhesive layer in one direction with a rubber roller or the like is performed, the width of the cut formed according to the blade crystal cutting direction may be different. Hereinafter, reference will be made to Figure 5 (b) to explain this point. When a pressing treatment such as pressing the pressure-sensitive adhesive layer in one direction with a rubber roller or the like is performed, when this one direction is set as direction A, the direction same as direction A is set as direction Ch1, and the direction orthogonal to Ch1 is set as direction Ch2, the cut width WCh1 (the cut width formed by crystal cutting in direction Ch2) between adjacent chips in direction Ch1 and the cut width WCh2 (the cut width formed by crystal cutting in direction Ch1) between adjacent chips in direction Ch2 may be different. Generally, the vibration width of the cut width WCh1 tends to be larger than that of the cut width WCh2. In the relationship between the cut widths WCh1 and WCh2 and the conditions of the above-mentioned cut width, either the cut width WCh1 or the cut width WCh2 only needs to satisfy the conditions of the above-mentioned cut width, but from the viewpoint of more surely suppressing double mode, it is preferable that both the cut width WCh1 and the cut width WCh2 satisfy the conditions of the above-mentioned cut width.

[0090] The incision width of the pressure-sensitive adhesive layer 3 formed on the cut body 20 by blade crystal cutting is, for example, 10 μm or more, 13 μm or more, 15 μm or more, or 17 μm or more. If the incision width is 10 μm or more, it tends to be able to suppress bimodality. If it is 13 μm or more, it tends to more surely suppress bimodality. The upper limit of the incision width is not particularly limited and can be set to 50 μm or less, for example.

[0091] The blade width can be 10 to 50 μm, or can be 10 to 30 μm or 10 to 25 μm. Even when using a blade with such a narrow width, bimodality can be more sufficiently suppressed. In addition, the blade width can be, for example, the measured value obtained from the grooving of the silicon wafer using an optical microscope. The measurement method of the measured value can be, for example, the method described in the examples.

[0092] After crystal cutting, active energy rays are not irradiated onto the pressure-sensitive adhesive layer 3. As Figure 4 (d) shows, at room temperature or under cooling conditions, the chips S are separated from each other by expanding the base material layer 1, and at the same time, the adhesive sheet 5P is peeled off from the pressure-sensitive adhesive layer 3 by pushing up with the pin 42, and the DAF8 is sucked and picked up by the suction chuck 44.

[0093] Reference Figure 6 、 Figure 7 and Figure 8 , the manufacturing method of the semiconductor device 100 will be specifically described. First, as Figure 6 shows, the first-stage chip S1 (chip S) is pressed onto a specified position of the substrate 70 via the adhesive sheet 5P. Secondly, the adhesive sheet 5P is cured by heating. Thus, the adhesive sheet 5P is cured to become a cured product 5C. From the viewpoint of reducing pores, the curing process of the adhesive sheet 5P can be carried out in a pressurized environment.

[0094] In the same manner as mounting the chip S1 on the substrate 70, the second-stage chip S2 is mounted on the surface of the chip S1. In addition, the third-stage and fourth-stage chips S3 and S4 are mounted to fabricate the Figure 7 shown structure 60. After the chips S1, S2, S3, and S4 and the substrate 70 are electrically connected by the wires W1, W2, W3, and W4 (reference Figure 8 ), the semiconductor elements and the wires are sealed by the sealing layer 50, thereby completing the Figure 3 shown semiconductor device 100.

[0095] As described above, the embodiments of the present invention have been described in detail, but the present invention is not limited to the above embodiments. For example, in the above embodiments, the film 10 having the substrate layer 1, the pressure-sensitive adhesive layer 3, and the adhesive layer 5 in this order is illustrated, but it may also be a form not having the adhesive layer 5. Further, the film 10 may further have a cover film (not shown) covering the adhesive layer 5.

[0096] Example

[0097] Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples. In addition, unless otherwise specified, all chemicals were used as reagents.

[0098] <Production Example 1>

[0099] [Synthesis of Acrylic Resin (A-1)]

[0100] The following components were added to a 2000 mL flask equipped with a three-in-one motor, a stirring blade, and a nitrogen inlet tube.

[0101] · Ethyl acetate (solvent): 635 parts by mass

[0102] · 2-Ethylhexyl acrylate: 395 parts by mass

[0103] · 2-Hydroxyethyl acrylate: 100 parts by mass

[0104] · Methacrylic acid: 5 parts by mass

[0105] · Azobisisobutyronitrile: 0.08 parts by mass

[0106] After stirring the contents until they became sufficiently uniform, foaming was carried out at a flow rate of 500 mL / min for 60 minutes to degas the dissolved oxygen in the system. The temperature was raised to 78 °C over 1 hour, and polymerization was carried out for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a 2000 mL autoclave equipped with a three-in-one motor, a stirring blade, and a nitrogen inlet tube, and heated at 120 °C and 0.28 MPa for 4.5 hours, and then cooled to room temperature (25 °C, the same hereinafter).

[0107] Next, 490 parts by mass of ethyl acetate was added and the content was diluted by stirring. After adding 0.10 part by mass of dioctyltin dilaurate as a urethanization catalyst thereto, 48.6 parts by mass of 2-methacryloyloxyethyl isocyanate (manufactured by SHOWA DENKO K.K., Karenz MOI (trade name)) was added, and after reacting at 70 °C for 6 hours, it was cooled to room temperature. Subsequently, ethyl acetate was further added to adjust so that the content of the non-volatile component in the acrylic resin solution became 35% by mass, and a solution containing the acrylic resin (A-1) having the polymerizable functional group of Production Example 1 was obtained.

[0108] The solution containing the acrylic resin (A-1) obtained as described above was vacuum dried at 60 °C overnight. Elemental analysis of the solid component thus obtained was performed using a fully automatic elemental analyzer (manufactured by Elementar Analysensysteme GmbH., trade name: vario EL), and as a result of calculating the content of the functional group derived from the introduced 2-methacryloyloxyethyl isocyanate from the nitrogen content, it was 0.50 mmol / g.

[0109] Moreover, the polystyrene-reduced weight average molecular weight of the acrylic resin (A-1) was determined using the following apparatus. That is, SD-8022 / DP-8020 / RI-8020 manufactured by Tosoh Corporation was used, Gelpack GL-A150-S / GL-A160-S manufactured by Hitachi Chemical Co., Ltd. was used as a column, and GPC measurement was performed using tetrahydrofuran as an eluent. As a result, the polystyrene-reduced weight average molecular weight was 800,000. The hydroxyl value and acid value measured according to the method described in JIS K0070 were 56.1 mgKOH / g and 6.5 mgKOH / g. These results are summarized in Table 1.

[0110] <Production Example 2>

[0111] [Synthesis of acrylic resin (A-2)]

[0112] A solution containing the acrylic resin (A-2) of Production Example 2 was obtained in the same manner as in Production Example 1 except that the raw material monomer composition shown in Production Example 1 of Table 1 was changed to the raw material monomer composition shown in Production Example 2 of Table 1. The measurement results of the properties of the acrylic resin (A-2) of Production Example 2 are shown in Table 1.

[0113] <Production Example 3>

[0114] [Synthesis of acrylic resin (A-3)]

[0115] Except for changing the raw material monomer composition shown in Production Example 1 of Table 1 to the raw material monomer composition shown in Production Example 3 of Table 1, a solution containing the acrylic resin (A-3) of Production Example 3 was obtained in the same manner as in Production Example 1. The measurement results of the properties of the acrylic resin (A-3) of Production Example 3 are shown in Table 1.

[0116] <Production Example 4>

[0117] [Synthesis of Acrylic Resin (A-4)]

[0118] Except for changing the raw material monomer composition shown in Production Example 1 of Table 1 to the raw material monomer composition shown in Production Example 4 of Table 1, a solution containing the acrylic resin (A-4) of Production Example 2 was obtained in the same manner as in Production Example 1. The measurement results of the properties of the acrylic resin (A-4) of Production Example 4 are shown in Table 1.

[0119] <Production Example 5>

[0120] [Synthesis of Acrylic Resin (A-5)]

[0121] Except for changing the raw material monomer composition shown in Production Example 1 of Table 1 to the raw material monomer composition shown in Production Example 5 of Table 1, a solution containing the acrylic resin (A-5) of Production Example 5 was obtained in the same manner as in Production Example 1. The measurement results of the properties of the acrylic resin (A-5) of Production Example 5 are shown in Table 1.

[0122] [Table 1]

[0123]

[0124] <Example 1>

[0125] [Production of Cleaved Crystal Film (Pressure-Sensitive Adhesive Layer)]

[0126] A varnish of an energy ray-curable pressure-sensitive adhesive (varnish for forming a pressure-sensitive adhesive layer) (refer to Table 2) was prepared by mixing the following components. The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish became 25% by mass.

[0127] · Solution containing the acrylic resin (A-1) of Production Example 1: 100 parts by mass (solid content)

[0128] · Photoinitiator (B-1) (1-hydroxycyclohexyl phenyl ketone (manufactured by Ciba Japan K.K., Irgacure 184, “Irgacure” is a registered trademark)): 1.0 part by mass

[0129] · Crosslinking agent (C-1) (reaction product of polyfunctional isocyanate (reactant of toluene diisocyanate and trimethylolpropane), manufactured by Nippon Polyurethane Industry Co., Ltd., CORONATE L, solid content: 75%): 8.0 parts by mass (solid content)

[0130] · Ethyl acetate (solvent)

[0131] A polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 μm) with one surface release-treated was prepared. After applying a varnish of an energy ray-curable pressure-sensitive adhesive to the release-treated surface using a coater, it was dried at 80 °C for 5 minutes. Thus, a laminate (cut crystal film) composed of a polyethylene terephthalate film and a pressure-sensitive adhesive layer with a thickness of 30 μm formed thereon was obtained.

[0132] A polyolefin film (width 450 mm, length 500 mm, thickness 80 μm) with one surface corona-treated was prepared. The corona-treated surface and the pressure-sensitive adhesive layer of the above laminate were laminated at room temperature. Then, a rubber roller was moved and pressed in one direction, thereby transferring the pressure-sensitive adhesive layer to the polyolefin film (cover film). Thereafter, a cut crystal film with a cover film was obtained by allowing it to stand at room temperature for 3 days.

[0133] [Production of grain bonding film (adhesive layer)]

[0134] A varnish for forming an adhesive layer was prepared by mixing the following components. First, cyclohexanone (solvent) was added to a mixture containing the following components and stirred and mixed, and then further kneaded with a bead mill for 90 minutes.

[0135] · Epoxy resin (YDCN-700-10 (trade name), manufactured by NIPPON STEEL Chemical & Material Co., Ltd., cresol novolak type epoxy resin, epoxy equivalent: 210, molecular weight: 1200, softening point: 80 °C): 14 parts by mass

[0136] · Phenolic resin (MILEX XLC-LL (trade name), manufactured by Mitsui Chemicals, Inc., phenolic resin, hydroxyl equivalent: 175, water absorption rate: 1.8%, heating weight loss rate at 350 °C: 4%): 23 parts by mass

[0137] · Silane coupling agent (NUC A-189 (trade name), manufactured by NUC CO., LTD., γ-mercaptopropyltrimethoxysilane): 0.2 parts by mass

[0138] · Silane coupling agent (NUCA-1160 (trade name), manufactured by NUC CO., LTD., γ-ureidopropyltriethoxysilane): 0.1 part by mass

[0139] · Filler (SC2050-HLG (trade name), manufactured by Admatechs Corporation, silica, average particle size 0.500 μm): 32 parts by mass

[0140] After further adding the following components to the mixture obtained as described above, through the processes of stirring and mixing and vacuum degassing, a varnish for forming an adhesive layer (an adhesive composition varnish containing at least a (meth)acrylic copolymer having a reactive group, a curing accelerator, and a filler) was obtained.

[0141] · Acrylic copolymer containing an epoxy group (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, weight average molecular weight 800,000): 16 parts by mass

[0142] · Curing accelerator (CUREZOL 2PZ-CN (trade name), manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole, "CUREZOL" is a registered trademark): 0.1 part by mass

[0143] A polyethylene terephthalate film (thickness 35 μm) with one surface subjected to a release treatment was prepared. After applying the varnish for forming an adhesive layer to the surface subjected to the release treatment using a coater, it was heated and dried at 140 °C for 5 minutes. Thus, a laminate (die bonding film) composed of a polyethylene terephthalate film (carrier film) and an adhesive layer (B-stage state) with a thickness of 25 μm formed thereon was obtained.

[0144] [Fabrication of a diced die bonding integrated film]

[0145] The die bonding film composed of an adhesive layer and a carrier film together with the carrier film was cut into a circle with a diameter of 335 mm. After attaching the diced die film from which the polyethylene terephthalate film was peeled off to the cut die bonding film at room temperature, it was left at room temperature for 1 day. Thereafter, the diced die film was cut into a circle with a diameter of 370 mm to obtain a laminate. The region (the first region of the pressure-sensitive adhesive layer) corresponding to the attachment position of the wafer in the adhesive layer of the laminate thus obtained was irradiated with ultraviolet light as follows. That is, using a pulsed xenon lamp, ultraviolet light was locally irradiated at an irradiation dose of 70 W, 300 mJ / cm 2 In this way, the diced die bonding integrated film of Example 1 for performing various evaluation tests described later was obtained.

[0146] [Evaluation Test]

[0147] (Measurement of Notch Width)

[0148] The diced and bonded integrated film of Example 1 was attached to a wafer (silicon, 12 inches in diameter, 50 μm in thickness) by heating at 80°C for 10 seconds. Thereafter, in order to obtain a plurality of quadrilateral chips of a specified size under the following dicing conditions, in the above-mentioned "Production of Dicing Film (Pressure-Sensitive Adhesive Layer)", when transferring the pressure-sensitive adhesive layer to a polyolefin film (cover film), dicing grooves were cut at a specified interval in the same direction as the moving direction of the rubber roller, and further dicing grooves were cut at a specified interval in the direction orthogonal to the moving direction of the rubber roller, thereby singulating into a plurality of adhesive-attached chips.

[0149] · Dicing Machine: Manufactured by DISCO Corporation, DFD-6361

[0150] · Blade: Manufactured by DISCO Corporation, ZH05-SD4000-N1-70-BB

[0151] · Blade Rotation Speed: 40000 rpm

[0152] · Dicing Speed: 30 mm / s

[0153] · Dicing Groove Depth from the Surface of the Pressure-Sensitive Adhesive Layer to the Substrate Layer: 20 μm

[0154] · Dicing Mode: Down-Cut

[0155] · Chip Size: 10 mm × 10 mm

[0156] In the singulated wafer, in the above-mentioned "Production of Dicing Film (Pressure-Sensitive Adhesive Layer)", when transferring the pressure-sensitive adhesive layer to a polyolefin film (cover film), the moving direction of the rubber roller was set as direction Ch1, the direction orthogonal to Ch1 was set as direction Ch2, and the notch width WCh1 between adjacent chips in direction Ch1 and the notch width WCh2 between adjacent chips in direction Ch2 were measured using an optical microscope. In the measurement, three measurement sites were set, and the average value of these was obtained as the notch width. The results are shown in Table 2.

[0157] (Measurement of Blade Width)

[0158] The diced and grain-bonded integrated film of Example 1 was attached to a wafer with a thickness of 400 μm by heating at 80°C for 10 seconds. Thereafter, the cutting depth from the wafer surface to the adhesive layer was set to 100 μm, and a single cutting groove was cut under the same conditions as the crystal cutting conditions for measuring the above-mentioned cut width. Then, the wafer was cut orthogonally to the cutting groove, and the cut surface in the obtained cut was observed. The width at a height position of 20 μm from the lowermost part of the crystal cutting was measured as the blade width. The blade width was 20.8 μm. In the evaluation test, this value was used as the blade width and was used to calculate the ratio of the cut width to the blade width.

[0159] (Calculation of the ratio of the cut width to the blade width)

[0160] The ratio of the cut width to the blade width was calculated based on the obtained cut width and blade width. The results are shown in Table 2.

[0161] <Examples 2 to 11 and Comparative Examples 1 and 2>

[0162] The composition of the pressure-sensitive adhesive layer and the ultraviolet irradiation amount shown in Example 1 of Table 2 were changed to the composition of the pressure-sensitive adhesive layer and the ultraviolet irradiation amount shown in each example and each comparative example of Tables 2, 3, and 4, and the crystal cutting conditions shown in Example 1 of Table 2 were changed to the crystal cutting conditions shown in each example and each comparative example of Tables 2, 3, and 4. Except for this, the evaluation test was carried out in the same manner as in Example 1. In addition, the photoinitiator (B-2) was 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]-phenyl}-2-methyl-propan-1-one (manufactured by Ciba Japan K.K., Irgacure 127, “Irgacure” is a registered trademark). The results are shown in Tables 2, 3, and 4.

[0163]

[0164]

[0165] [Table 4]

[0166]

[0167] As shown in Tables 2, 3 and 4, in the case of the diced die-bonded integrated film of Examples 1 to 11 in which a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive was used and the content of the functional group in the (meth)acrylic resin was 0.4 mmol / g or more, the notch width was 75% or more with respect to the blade width. On the other hand, in the case of the diced die-bonded integrated film of Comparative Examples 1 and 2 that did not satisfy these requirements, the notch width was less than 75% with respect to the blade width. From these results, it was confirmed that even when a blade with a narrow width was used for the diced die-bonded integrated film of the present invention, the notch width could be sufficiently ensured.

[0168] Symbol Explanation

[0169] 1 - Substrate layer, 3 - Pressure-sensitive adhesive layer, 3a - First region, 3b - Second region, 5 - Adhesive layer, 5P - Adhesive sheet, 5C - Cured product, 8 - DAF, 10 - Diced die-bonded integrated film (film), 20 - Cut body, 42 - Pin, 44 - Suction chuck, 50 - Sealing layer, 60 - Structure, 70 - Substrate, 100 - Semiconductor device, DR - Crystal cutting ring, F1 - First surface, F2 - Second surface, Rw - Region, S1, S2, S3, S4, S - Chip, W - Wafer, W1, W2, W3, W4 - Lead wire, WCh1, WCh2 - Notch width.

Claims

1. A method for manufacturing a semiconductor device, comprising: A first step of preparing a diced die bonding integrated film, the diced die bonding integrated film including a substrate layer, a pressure-sensitive adhesive layer, and an adhesive layer, the pressure-sensitive adhesive layer being a pressure-sensitive adhesive layer composed of an energy ray-curable pressure-sensitive adhesive having a first surface facing the substrate layer and a second surface opposite to the first surface, and the adhesive layer being an adhesive layer provided so as to cover a central portion of the second surface of the pressure-sensitive adhesive layer; A second step of attaching a wafer to the adhesive layer of the diced die bonding integrated film and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer; A third step of singulating the wafer together with the adhesive layer and the pressure-sensitive adhesive layer into a plurality of chips by blade dicing using a blade to form a cut body; A fourth step of picking up the chips together with an adhesive sheet singulated from the adhesive layer from the pressure-sensitive adhesive layer of the cut body; and A fifth step of mounting the chips on a substrate or another chip via the adhesive sheet, The pressure-sensitive adhesive layer has a first region corresponding to a region of the adhesive layer to which the wafer is attached and a second region to which the dicing ring is attached, The first region is a region in which the adhesive force is decreased compared to the second region due to the irradiation of energy rays; In the third step, the width of a cut formed on the pressure-sensitive adhesive layer of the cut body by the blade dicing is 75% or more with respect to the width of the blade; The energy ray-curable pressure-sensitive adhesive contains a (meth)acrylic resin having a polymerizable functional group; The functional group is at least one selected from an acryloyl group and a methacryloyl group; The content of the functional group in the (meth)acrylic resin is 0.4 to 2.0 mmol / g.

2. The method for manufacturing a semiconductor device according to claim 1, wherein The width of the blade is 10 to 50 μm.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein The multiple chips have a square or rectangular shape and an area of 200 mm 2 or less.

4. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein The energy ray-curable pressure-sensitive adhesive further contains a crosslinking agent; The content of the crosslinking agent is 0.1 to 15% by mass with respect to the total mass of the energy ray-curable pressure-sensitive adhesive.

5. The method for manufacturing a semiconductor device according to claim 4, wherein The crosslinking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyol having three or more hydroxyl groups in one molecule.

6. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein The adhesive layer is composed of an adhesive composition, and the adhesive composition includes a (meth)acrylic copolymer containing a reactive group, a curing accelerator, and a filler.

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