Substrate processing device and substrate moving method

Abstract

The present invention provides a substrate processing device and a substrate moving method, and more particularly provides a substrate processing device and a substrate moving method that can maximize the suppression of non-uniformity of substrate processing by rotating a substrate and moving a stage in a chamber.

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate moving method, and more particularly to a substrate processing device and a substrate moving method for moving a substrate in a chamber along with a rotating stage, thereby maximally suppressing unevenness in a substrate processing process. Background Art

[0002] Generally speaking, a substrate processing apparatus places a substrate inside a chamber and performs deposition or etching processes on the substrate. Recently, substrate processing apparatuses having a plurality of stages inside a chamber have been developed.

[0003] Figure 7 The figure shows a state where substrates 12, 14, 16, and 18 are processed in a conventional substrate processing apparatus having four stages within a chamber body 105. The substrates 12, 14, 16, and 18 are shown in light and dark for ease of explanation.

[0004] like Figure 7 As shown, there are four stages inside the chamber body 105 , and the substrates 12 , 14 , 16 , 18 are mounted on the respective substrate supporting parts 35A, 35B, 35C, 35D to perform deposition, etching and other processes on the substrates 12 , 14 , 16 , 18 .

[0005] But with Figure 7 Similarly, when substrates 12, 14, 16, and 18 are respectively mounted on the substrate supporting portions 35A, 35B, 35C, and 35D of the four stages and a processing process is performed on the substrates, the environments inside the cavities of the respective substrates 12, 14, 16, and 18 are different and the processing of the substrates 12, 14, 16, and 18 cannot be performed uniformly.

[0006] That is, the heat transfer rates are different between the center and the outer sides of the four substrate supporting parts 35A, 35B, 35C, and 35D. For example, the temperature of the center of the four substrate supporting parts 35A, 35B, 35C, and 35D is relatively higher than that of the outer sides. In some cases, the temperature of the center of the four substrate supporting parts 35A, 35B, 35C, and 35D is relatively lower than that of the outer sides.

[0007] In particular, the substrates 12 and 14 mounted on the first and second substrate supporting parts 35A and 35B where the slits 110 and 112 are located have greater heat loss than the substrates 16 and 18 mounted on the third and fourth substrate supporting parts 35C and 35D.

[0008] Furthermore, when the substrates 12, 14, 16, 18 are moved to the substrate support parts 35A, 35B, 35C, 35D of other stations by the loading arms 410A, 410B, 410C, 410D of the axis unit 400 located in the central part of the chamber body 105, the axis unit 400 rotates in the central part of the chamber 100 and moves the substrate. Therefore, when the substrate is transferred to the substrate support parts 35A, 35B, 35C, 35D of other stations, the area toward the central part of the substrate does not change, and the above-mentioned problem cannot be solved.

[0009] Therefore, during the processing process, if the substrates 12, 14, 16, and 18 are processed unevenly due to the different environments of the various substrate support parts 35A, 35B, 35C, and 35D, it is difficult to maintain the uniformity of the processing such as deposition or etching on the substrates 12, 14, 16, and 18. Summary of the Invention

[0010] Technical problem to be solved by the invention

[0011] The present invention is to solve the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus that can minimize the non-uniformity of processing processes for each substrate even when substrate environments within a chamber are different.

[0012] Technical solutions to solve problems

[0013] The object of the present invention as described above is achieved by a substrate processing device, which includes: a chamber; a plurality of stages arranged inside the chamber to provide a reaction space for the substrate; a substrate support portion configured on the stages to support the substrate; a rotating unit arranged outside the lower portion of the chamber to rotate the substrate support portion; a vertical moving unit arranged outside the lower portion of the chamber to move the substrate support portion up and down; and a bellows connected to one of the rotating unit or the vertical moving unit on the outer side of the lower portion of the chamber.

[0014] Furthermore, the object of the present invention as described above is achieved by a substrate moving method of a substrate processing device, wherein the substrate processing device of the substrate moving method of the substrate processing device includes: a plurality of substrate support parts, which are arranged inside a cavity to support the substrate and can move up and down and rotate; lifting pins, which lift the substrate up and down on the substrate support parts; an axis unit, which is arranged between the plurality of substrate support parts to move the substrate between the substrate support parts, and the substrate moving method of the substrate processing device includes the following steps: in a state where the plurality of substrate support parts are installed with the substrate, rotating the substrate support part in a first direction by a first angle determined in advance; separating the substrate from the substrate support part; and rotating the substrate support part in a second direction opposite to the first direction by a second angle determined in advance.

[0015] Here, the second angle is the same as the first angle.

[0016] In addition, the step of separating the substrate from the substrate support part includes the following steps: raising the lifting pin to lift the substrate on the substrate support part; rotating the loading arm of the axis unit toward the lower part of the lifting pin, raising the axis unit and lifting the substrate on the lifting pin.

[0017] Furthermore, the steps of rotating the substrate support portion in a first direction by a first angle determined in advance, separating the substrate from the substrate support portion, and rotating the substrate support portion in a second direction opposite to the first direction by a second angle determined in advance are performed in the process of the substrate.

[0018] Moreover, during the steps of rotating the substrate support portion in a first direction by a first angle determined in advance, separating the substrate from the substrate support portion, and rotating the substrate support portion in a second direction opposite to the first direction by a second angle determined in advance, the supply of raw material gas and reaction gas into the chamber is stopped.

[0019] In addition, after the step of rotating the substrate support part in the second direction, the step of moving the substrate to an adjacent substrate support part is also included. The step of moving the substrate to an adjacent substrate support part includes the following steps: rotating the axis unit; lowering the axis unit to install the substrate on the lifting pin; and lowering the lifting pin to install the substrate on the substrate support part.

[0020] Furthermore, in a state where the substrate is mounted on the plurality of substrate supporting parts, the step of rotating the substrate supporting parts in a first direction by a first angle determined in advance is repeatedly performed two or more times.

[0021] Furthermore, in a state where the substrate is mounted on the plurality of substrate supporting parts, in the step of rotating the substrate supporting parts in a first direction by a first angle determined in advance, supply of the raw material gas and the reaction gas into the chamber is stopped.

[0022] In addition, after the step of rotating the substrate supporting portion in the second direction, the method further includes the step of taking the substrate out of the chamber.

[0023] Effects of the Invention

[0024] According to the present invention having the above structure, even when the substrate environments in the chamber are different, each substrate is rotated and moved by the stage in the chamber, thereby maximally suppressing the non-uniformity of the substrate processing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 An exploded perspective view of a substrate processing apparatus according to an embodiment of the present invention;

[0026] Figure 2 A partial side cross-sectional view showing the structure of a substrate support portion;

[0027] Figure 3 A sequence diagram showing a substrate moving method according to an embodiment of the present invention;

[0028] Figures 4 to 6 A plan view showing the rotation and movement of a substrate on a table of a substrate processing apparatus;

[0029] Figure 7 A plan view of a substrate processing apparatus in the prior art.

[0030] Description of Reference Numerals

[0031] 12, 14, 16, 18: substrate

[0032] 100: Cavity

[0033] 105: Cavity body

[0034] 120: Cavity guide

[0035] 110, 112: Slit

[0036] 300A, 300B, 300C, 300D: Taiwan

[0037] 305A, 305B, 305C, 305D: substrate support portion

[0038] 310A, 310B, 310C, 310D: Lifting pin

[0039] 400: Axis unit

[0040] 410A, 410B, 410C, 410D: Loading arms

[0041] 500A, 500B, 500C, 500D: Gas supply unit

[0042] 1000: substrate processing device DETAILED DESCRIPTION

[0043] Hereinafter, the structure of a substrate processing apparatus and a substrate moving method according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0044] Figure 1 FIG. 1 is a perspective view of a substrate processing apparatus 1000 according to an embodiment of the present invention. Figure 2 It is a partial side cross-sectional view showing the structure of the substrate support portion 305A.

[0045] Reference Figure 1 and Figure 2 The substrate processing apparatus 1000 includes: a chamber 100, providing a space for accommodating a substrate; substrate supporting parts 305A, 305B, 305C, and 305D, which are arranged inside the chamber 100 and support the substrates 12, 14, 16, and 18 (see Figure 4 ); a rotating unit 3000, which is arranged on the outer side of the lower part of the cavity 100 to rotate the substrate supporting parts 305A, 305B, 305C, and 305D; a vertical moving unit 3900, which is arranged on the outer side of the lower part of the cavity 100 to move the substrate supporting parts 305A, 305B, 305C, and 305D up and down; and a bellows 106, which is connected to the rotating unit 3000 or the vertical moving unit 3900 on the outer side of the lower part of the cavity 100.

[0046] The chamber 100 forms the exterior of the substrate processing apparatus 1000. Substrates 12, 14, 16, and 18 are introduced into or removed from the chamber 100 through slits 110 and 112 formed on one side of the chamber 100. The chamber 100 is composed of a chamber body 105 and a chamber guide 120 that seals the upper portion of the chamber body 105.

[0047] The substrates are moved into the cavity 100 through the slits 110 and 112 and then mounted on the tops of the lift pins 310A, 310B, 310C, and 310D. Furthermore, the substrates 12, 14, 16, and 18 are moved from the cavity 100 to the outside of the cavity 100 through the slits 110 and 112.

[0048] In addition, a plurality of stages 300A, 300B, 300C, and 300D are disposed in the interior 102 of the chamber 100 to provide reaction spaces for the substrates 12 , 14 , 16 , and 18 , respectively.

[0049] For example, each of the stages 300A, 300B, 300C, and 300D includes a first stage 300A and a second stage 300B disposed adjacent to the slits 110 and 112 for taking in and taking out substrates, and a third stage 300C and a fourth stage 300D disposed spaced apart from the slits 110 and 112 .

[0050] In this case, the stages 300A, 300B, 300C, and 300D provide additional reaction spaces for substrates, thereby enabling deposition processes to be performed on multiple substrates 12 , 14 , 16 , and 18 simultaneously, thereby increasing the throughput of the substrate processing apparatus 1000 .

[0051] For example, when the substrate processing apparatus 1000 deposits thin films on the substrates 12, 14, 16, and 18 using atomic layer deposition (ALD), the throughput can be significantly improved compared to conventional apparatuses that deposit thin films using ALD. However, the present invention is not limited thereto and the substrate processing apparatus 1000 can also deposit thin films on the substrates 12, 14, 16, and 18 using plasma-enhanced chemical vapor deposition (PECVD).

[0052] Each of the stages 300A, 300B, 300C, and 300D includes a substrate support portion 305A, 305B, 305C, and 305D that supports a substrate and can be raised and lowered. Elevator pins 310A, 310B, 310C, and 310D can be positioned on each of the substrate support portions 305A, 305B, 305C, and 305D so that they can be raised and lowered. While the drawings show three lift pins 310A, 310B, 310C, and 310D on each of the substrate support portions 305A, 305B, 305C, and 305D, these pins can be modified as appropriate.

[0053] Furthermore, a chamber guide 120 is provided above the chamber 100. Gas supply units 500A, 500B, 500C, and 500D corresponding to the substrate supports 305A, 305B, 305C, and 305D are provided within the chamber guide 120. Therefore, when the substrate supports 305A, 305B, 305C, and 305D are raised by the gas supply units 500A, 500B, 500C, and 500D, reaction spaces are formed between the gas supply units 500A, 500B, 500C, and 500D and the substrate supports 305A, 305B, 305C, and 305D.

[0054] Figure 1 3 , four stages 300A, 300B, 300C, and 300D are provided inside the chamber 100 , but the present invention is not limited thereto, and the number of the stages 300A, 300B, 300C, and 300D can be changed appropriately.

[0055] The substrates 12, 14, 16, and 18 transferred into the chamber 100 are mounted on the stages 300A, 300B, 300C, and 300D, respectively. For this purpose, a spindle unit 400 is provided in the center of the chamber 100 as a transfer device for moving the substrates 12, 14, 16, and 18.

[0056] The axis unit 400 is disposed inside the chamber 100 , specifically, in the center of the chamber 100 or the center of each of the stages 300A, 300B, 300C, and 300D.

[0057] The axis unit 400 includes a main body 420 that rotates and elevates, and a plurality of loading arms 410A, 410B, 410C, and 410D extending from the main body 420 for mounting the substrates 12, 14, 16, and 18. The number of loading arms 410A, 410B, 410C, and 410D corresponds to the number of stages 300A, 300B, 300C, and 300D. That is, the number of loading arms 410A, 410B, 410C, and 410D is the same as the number of stages 300A, 300B, 300C, and 300D.

[0058] The axis unit 400 performs lifting and rotating motions to move the substrates introduced into the first stage 300A and the second stage 300B of the chamber 100 through the slits 110 and 112 and install them on the third stage 300C and the fourth stage 300D.

[0059] Furthermore, the axis unit 400 transfers the substrates from the third station 300C and the fourth station 300D to the first station 300A and the second station 300B, and takes the substrates 12 , 14 , 16 , and 18 out of the chamber 100 from the first station 300A and the second station 300B.

[0060] The present invention provides a substrate processing apparatus that can minimize the occurrence of uneven processing of the substrates 12 , 14 , 16 , and 18 even when the substrate environments within the chamber 100 are different.

[0061] Figure 2 FIG. 1 is a partial side cross-sectional view showing the structure of the substrate supporting portion 305A of the first stage 300A in the chamber 100 .

[0062] Reference Figure 2The substrate processing apparatus 1000 is disposed inside the chamber 100 and is provided with a substrate support portion 305A for supporting the substrate 12. The substrate support portion 305A is provided with a driving rod 3100 extending downward. Furthermore, a lift pin 310A is disposed on the substrate support portion 305A in a manner that allows it to be raised and lowered. A fixing portion 150 is provided at the lower portion of the substrate support portion 305A. Therefore, when the substrate support portion 305A is lowered, the lower end portion of the lift pin 310A is supported by the fixing portion 150, and the lift pin 310A can protrude to the upper portion of the substrate support portion 305A.

[0063] In addition, the driving rod 3100 protrudes to the outside through the opening 108 at the bottom of the chamber 100. In this case, the bellows 106 is arranged to cover the opening 108 of the chamber 100 to keep the interior of the chamber 100 sealed.

[0064] A rotating unit 3000 for rotating the substrate supporting portion 305A and a vertical moving unit 3900 for moving the substrate supporting portion 305A up and down are provided on the outer side of the lower portion of the chamber 100 .

[0065] For example, the rotating unit 3000 includes a sealing portion 3200 connected to an extending portion 3120 provided at a lower end portion of the driving rod 3100 ; and a first driving portion 3300 for rotating the extending portion 3120 .

[0066] The extension portion 3120 is rotated by the driving of the first driving portion 3300 , and the driving rod 3100 and the substrate supporting portion 305A are rotated together with the extension portion 3120 .

[0067] Furthermore, the vertical movement unit 3900 includes a vertical module 3500 for vertically moving the extension portion 3120, and a second drive unit 3600 connected to the vertical module 3500. The vertical module 3500 is connected to the sealing portion 3200. In this case, a connection unit 3400 is further provided between the vertical module 3500 and the sealing portion 3200. The vertical module 3500 is driven by the second drive unit 3600 to move vertically, and the drive rod 3100 and the substrate support portion 305A move vertically in response to the vertical movement of the vertical module 3500.

[0068] Figure 2 31 shows that the rotating unit 3000 is connected to the extension part 3120, and the vertical moving unit 3900 is connected to the rotating unit 3000, but conversely, it can also be a structure in which the vertical moving unit 3900 is connected to the extension part 3120, and the rotating unit 3000 is connected to the vertical moving unit 3900.

[0069] Furthermore, the bellows 106 is connected and sealed between the lower portion of the chamber 100 and the rotating unit 3000. Although not shown in the drawings, when the vertical moving unit 3900 is connected to the extension portion 3120, the bellows 106 is connected between the lower portion of the chamber 100 and the vertical moving unit 3900.

[0070] In the case of the substrate processing apparatus 1000 having the above structure, the substrates 12, 14, 16, 18 mounted on the substrate supporting parts 305A, 305B, 305C, 305D are rotated by rotating the substrate supporting parts 305A, 305B, 305C, 305D, thereby uniformly performing processing on the substrates 12, 14, 16, 18.

[0071] In particular, the substrate processing apparatus 1000 of the present invention minimizes the generation of particles by rotating the substrate support parts 305A, 305B, 305C, and 305D. For example, in the case where the substrates 12, 14, 16, and 18 themselves are rotated by using an axis unit disposed inside the chamber 100, the axis unit structure is very complex. In this case, particles may be generated due to the complex structure when the axis unit is operated to rotate the substrates. Since the axis unit is inside the chamber 100, particles generated in the axis unit have a negative impact on the substrate. In the present invention, the rotating unit 3000 that rotates the substrate is disposed outside the chamber 100, and the substrate support parts 305A, 305B, 305C, and 305D themselves are rotated to maximize the generation of particles inside the chamber.

[0072] Next, a method for moving a substrate in the substrate processing apparatus 1000 having the above-described structure will be described.

[0073] Figure 3 FIG. 1 is a sequence diagram showing a substrate moving method according to an embodiment of the present invention.

[0074] Reference Figure 3 The substrate moving method includes the following processes: when the multiple substrate supporting parts 305A, 305B, 305C, 305D are installed with the substrates 12, 14, 16, and 18, the substrate supporting parts 305A, 305B, 305C, and 305D are rotated in a first direction by a first angle determined in advance (S310); the substrates 12, 14, 16, and 18 are separated from the substrate supporting parts 305A, 305B, 305C, and 305D (S330); and the substrate supporting parts 305A, 305B, 305C, and 305D are rotated in a second direction opposite to the first direction by a second angle determined in advance (S350).

[0075] Figure 4 The state where the substrates are mounted on the respective substrate supporting parts 305A, 305B, 305C, and 305D in the chamber 100 before the above-mentioned substrate moving method is performed is shown. Figure 4 For the sake of convenience, the diagram shows the division of regions displayed on the substrates 12, 14, 16, and 18. Each substrate 12, 14, 16, and 18 is divided into four regions, namely, regions 'A', 'B', 'C', and 'D' in a clockwise direction, with the region toward the center of the cavity 100 being shown as region 'A'.

[0076] Reference Figure 4 In a state where the substrates 12, 14, 16, 18 are respectively mounted on the plurality of substrate supporting parts 305A, 305B, 305C, 305D, the substrate supporting parts 305A, 305B, 305C, 305D are rotated in a first direction by a first angle determined in advance.

[0077] That is, in a state where the substrates 12 , 14 , 16 , 18 are mounted on the substrate supporting parts 305A, 305B, 305C, 305D, the substrate supporting parts 305A, 305B, 305C, 305D are rotated.

[0078] The substrate supporting parts 305A, 305B, 305C, and 305D are rotated by the driving of the rotating unit 3000. Here, the first direction is defined as a clockwise direction or a counterclockwise direction. The following description assumes that the first direction corresponds to the clockwise direction.

[0079] Furthermore, each substrate support portion 305A, 305B, 305C, and 305D is rotated in a first direction by a predetermined first angle. In this case, the first angle is predetermined to be greater than 0 degrees and less than 360 degrees. For example, the first angle is set to 90 degrees. The following description assumes that the first angle is set to 90 degrees.

[0080] Figure 5 Shown in Figure 4 In the embodiment, each substrate supporting portion 305A, 305B, 305C, and 305D is rotated in a first direction (for example, clockwise) by a first angle (for example, 90 degrees).

[0081] Reference Figure 5 , each substrate supporting portion 305A, 305B, 305C, and 305D is rotated 90 degrees and the 'D' region of each substrate 12 , 14 , 16 , and 18 faces the center of the chamber 100 .

[0082] Furthermore, the substrates 12 , 14 , 16 , and 18 are separated from the substrate supporting portions 305A, 305B, 305C, and 305D.

[0083] For example, the step of separating the substrates 12, 14, 16, 18 from the substrate supports 305A, 305B, 305C, 305D first raises the lift pins 310A, 310B, 310C, 310D to lift the substrates 12, 14, 16, 18 from the substrate supports 305A, 305B, 305C, 305D.

[0084] Then, the axis unit 400, which is located in the center of the chamber 100, is rotated so that the loading arms 410A, 410B, 410C, and 410D of the axis unit 400 are positioned below the lift pins 310A, 310B, 310C, and 310D. Furthermore, the axis unit 400 is raised to a height higher than the lift pins 310A, 310B, 310C, and 310D, thereby lifting the substrates 12, 14, 16, and 18 from the lift pins 310A, 310B, 310C, and 310D and separating them.

[0085] In addition, the step of rotating the substrate supporting parts 305A, 305B, 305C, and 305D in a second direction opposite to the first direction by a second angle determined in advance is performed when the substrates 12, 14, 16, and 18 are separated from the lifting pins 310A, 310B, 310C, and 310D by the axis unit 400.

[0086] For example, the step of rotating the substrate supporting parts 305A, 305B, 305C, and 305D in a second direction opposite to the first direction by a second angle determined in advance is performed after the axis unit 400 is raised and the substrates 12, 14, 16, and 18 are separated from the lifting pins 310A, 310B, 310C, and 310D.

[0087] The reason for rotating the substrate supporting parts 305A, 305B, 305C, and 305D again in a second direction opposite to the first direction is to prevent interference between the lift pins 310A, 310B, 310C, and 310D and the loading arms 410A, 410B, 410C, and 410D of the axis unit 400 when the axis unit 400 rotates and enters below the lift pins 310A, 310B, 310C, and 310D. For example, the second angle is the same as the first angle.

[0088] In addition, after the step of rotating the substrate supporting parts 305A, 305B, 305C, 305D in a second direction opposite to the first direction by a second angle determined in advance, the step of transferring the substrates 12, 14, 16, 18 to adjacent substrate supporting parts 305A, 305B, 305C, 305D is performed.

[0089] That is, the substrate transfer method of the present invention may be performed before the processing of the substrates 12 , 14 , 16 , 18 is completed or during the processing of the substrates 12 , 14 , 16 , 18 .

[0090] In this case, the processing is performed while the substrates 12 , 14 , 16 , 18 are moved to adjacent stages before the processing of the substrates 12 , 14 , 16 , 18 is completely completed.

[0091] Furthermore, during the substrate movement method, the supply of process gases, such as raw material gases and reaction gases, to the chamber 100 is stopped. Furthermore, the supply of high-frequency power for the plasma is stopped. During substrate movement, the processing cannot proceed smoothly. However, the supply of ambient atmosphere-forming gases, such as the inert gases supplied to the chamber 100, continues.

[0092] Furthermore, in the step of transferring the substrates 12, 14, 16, and 18 to adjacent substrate supporting portions 305A, 305B, 305C, and 305D, after the substrates 12, 14, 16, and 18 are lifted from the lift pins 310A, 310B, 310C, and 310D, the axis unit 400 is rotated in the first direction or the second direction so that the substrates 12, 14, 16, and 18 are positioned on the substrate supporting portions 305A, 305B, 305C, and 305D of the adjacent stages 300A, 300B, 300C, and 300D. In this description, the case where the axis unit 400 rotates clockwise to transfer the substrates 12, 14, 16, and 18 is described.

[0093] Then, the axis unit 400 is lowered to install the substrates 12, 14, 16, and 18 on the lifting pins 310A, 310B, 310C, and 310D, and the lifting pins 310A, 310B, 310C, and 310D are lowered to install the substrates 12, 14, 16, and 18 on the substrate supporting parts 305A, 305B, 305C, and 305D.

[0094] Figure 6 Shown in Figure 5 In the state where the substrates 12 , 14 , 16 , and 18 are rotated in the clockwise direction by the axis unit 400 , and are mounted on the substrate supporting portions 305A, 305B, 305C, and 305D of the adjacent stages.

[0095] Reference Figure 6 The substrates 12, 14, 16, 18 mounted on the respective substrate support parts 305A, 305B, 305C, 305D are arranged in such a manner that the 'D' region faces the center. Figure 4 In the configuration, the substrates 12, 14, 16, and 18 are rotated so that the 'D' region faces the center.

[0096] Furthermore, in the case of the first and second stages 300A and 300B, since they are positioned adjacent to the slits 110 and 112, the heat loss of the first and second stages 300A and 300B can only be different from that of the third and fourth stages 300C and 300D. In the present invention, the substrates 12, 14, 16, and 18 are rotated while being moved toward the adjacent stages 300A, 300B, 300C, and 300D. This minimizes the unevenness of the processing caused by environmental changes between the substrates 12, 14, 16, and 18 and the inner wall of the chamber 100.

[0097] Furthermore, when the substrate moving method of the present invention is repeatedly performed during a substrate processing process, all substrates pass through the respective stages and are processed, thereby performing the substrate processing process more uniformly.

[0098] In addition, in a state where the substrates 12, 14, 16, 18 are mounted on the plurality of substrate supporting parts 305A, 305B, 305C, 305D, the step of rotating the substrate supporting parts 305A, 305B, 305C, 305D in a first direction by a first angle determined in advance is repeated twice or more.

[0099] That is, before the processing of the substrates 12 , 14 , 16 , and 18 is completed, the step of rotating the substrate supporting parts 305A, 305B, 305C, and 305D in the first direction is repeated twice or more.

[0100] In this case, the first angle is determined in advance to be an angle greater than 0 degrees and less than 360 degrees. For example, if the first angle is set to 90 degrees, the step of rotating the substrate supports 305A, 305B, 305C, and 305D in the first direction is repeated three times. That is, after the initial process, with the substrates 12, 14, 16, and 18 mounted on the substrate supports 305A, 305B, 305C, and 305D, the step of rotating the substrate supports 305A, 305B, 305C, and 305D in the first direction by 90 degrees is repeated three times. The process is then performed with all areas of the substrates 12, 14, 16, and 18 oriented toward the center, thereby addressing process non-uniformity. In this case, even when the substrates 12 , 14 , 16 , and 18 are not transferred along the stages 300A, 300B, 300C, and 300D, it is possible to resolve the non-uniformity of the processing of the substrates 12 , 14 , 16 , and 18 .

[0101] However, during the step of rotating the substrate supports 305A, 305B, 305C, and 305D in the first direction, the supply of process gases such as raw material gases and reaction gases to the chamber 100 is stopped. Furthermore, the supply of high-frequency power for the plasma is stopped. This is because rotating the substrate supports 305A, 305B, 305C, and 305D while the plasma is being supplied can cause arcing and changes in the plasma profile.

[0102] In addition, the substrates 12 , 14 , 16 , and 18 are taken out of the chamber 100 after the step of rotating the substrate supporting parts 305A, 305B, 305C, and 305D in the second direction.

[0103] That is, in the case where the processing of the substrates 12, 14, 16, 18 is completed by repeatedly rotating the substrate supporting parts 305A, 305B, 305C, 305D in a first direction by a first angle determined in advance, the substrates 12, 14, 16, 18 are taken out of the cavity 100 after the step of rotating the substrate supporting parts 305A, 305B, 305C, 305D in the second direction.

[0104] In summary, the present invention has been described with reference to preferred embodiments. However, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention as described in the claims. Therefore, if such variations substantially include the constituent elements of the present invention as described in the claims, they should be deemed to be fully included within the technical scope of the present invention.

Claims

1. A substrate moving method for a substrate processing apparatus, the substrate processing apparatus comprising: A plurality of substrate supporting parts are arranged inside the cavity to support the substrate and can move up and down and rotate; A lifting pin is used to lift the substrate up and down on the substrate supporting part; an axis unit is arranged between the plurality of substrate supporting parts to move the substrate between the substrate supporting parts. The substrate moving method of the substrate processing device is characterized in that: The steps include: In a state where the substrate is mounted on the plurality of substrate supporting parts, rotating the substrate supporting parts in a first direction by a first angle determined in advance; separating the substrate from the substrate support; and rotating the substrate supporting portion in a second direction opposite to the first direction by a second angle determined in advance, The step of separating the substrate from the substrate support portion comprises the following steps: Raising the lift pins to lift the substrate on the substrate supporting portion; The loading arm of the axis unit is rotated toward the lower portion of the lift pins to raise the axis unit and to raise the substrate on the lift pins. After the step of rotating the substrate supporting portion in the second direction, the method further includes the step of transferring the substrate to an adjacent substrate supporting portion. The step of transferring the substrate to the adjacent substrate supporting portion comprises the following steps: causing the axis unit to rotate; Lowering the axis unit to mount the substrate on the lift pins; and The lift pins are lowered to mount the substrate on the substrate supporting portion.

2. The substrate moving method of a substrate processing apparatus according to claim 1, wherein: The second angle is the same as the first angle.

3. The substrate moving method of a substrate processing apparatus according to claim 1, wherein: The steps of rotating the substrate support portion in a first direction by a first angle determined in advance, separating the substrate from the substrate support portion, and rotating the substrate support portion in a second direction opposite to the first direction by a second angle determined in advance are performed during the process of the substrate.

4. The substrate moving method of a substrate processing apparatus according to claim 1, wherein: During the steps of rotating the substrate supporting portion in a first direction by a first angle determined in advance, separating the substrate from the substrate supporting portion, and rotating the substrate supporting portion in a second direction opposite to the first direction by a second angle determined in advance, supply of raw material gas and reaction gas into the chamber is stopped.

5. The substrate moving method of a substrate processing apparatus according to claim 1, wherein: In a state where the substrate is mounted on the plurality of substrate supporting parts, the step of rotating the substrate supporting parts in a first direction by a first angle determined in advance is repeatedly performed two or more times.

6. The substrate moving method of a substrate processing apparatus according to claim 5, wherein: In a state where the substrate is mounted on the plurality of substrate supporting parts, in the step of rotating the substrate supporting parts in a first direction by a first angle determined in advance, supply of the raw material gas and the reaction gas into the chamber is stopped.

7. The substrate moving method of a substrate processing apparatus according to claim 5, wherein: After the step of rotating the substrate supporting portion in the second direction, the method further includes taking the substrate out of the chamber.

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