An omnidirectional electron beam receiving device and an imaging device

Abstract

The present application relates to the field of spaceflight, in particular to a kind of omni-directional electron beam receiving device and imaging device, omni-directional electron beam receiving device includes: structural shell, grid and microchannel plate, adjustable high voltage electrode, logic control module and high voltage module;Several grid sequentially arranged and center position overlapping is arranged at the opening of structural shell;Adjustable high voltage electrode and microchannel plate are sequentially arranged below several grid and located inside structural shell;Logic control module controls high voltage module to generate different amplitude high voltage, and loads adjustable high voltage electrode, so that it generates positive high voltage;Under the action of the gravity of positive high voltage, electron beam is accelerated along the axial direction, to change the motion trajectory of electron beam, so that electron beam reaches microchannel plate, to carry out subsequent imaging.

Description

Technical Field

[0001] This invention relates to the aerospace field, and in particular to an omnidirectional electron beam receiving device and an imaging device. Background Technology

[0002] In space, when an electron beam is emitted, its direction changes due to the influence of the spatial electromagnetic field. Since the spatial electromagnetic field is variable, the electron beam direction is also variable. In practical applications, it is impossible to completely predict or measure the electromagnetic field, and therefore, the direction of the electron beam cannot be completely predicted either. Therefore, in specific mission scenarios, the electron beam is omnidirectional for the detection sensor.

[0003] Patent CN109273338B discloses an electron beam imaging device, comprising: an inner photocathode, a grid, and a microchannel plate sequentially arranged in a drift tube, and a fluorescent screen and a charge-coupled device disposed outside the drift tube; electrons are accelerated between the photocathode and the grid, pass through the grid and are focused by at least two magnetic lenses, and after being amplified by the microchannel plate, the focused electrons strike the fluorescent screen to form an image, which is then acquired by the charge-coupled device.

[0004] However, current technologies, such as the electron beam imaging device provided in patent CN109273338B, can only receive and image electron beams with known directions or electron beams with certain directions. When the incident angle of the electron beam changes, conventional technologies must rotate the receiving sensor body or increase the aperture size of the receiving sensor in order to receive the electron beam and form an image.

[0005] Therefore, due to the mission requirements of space exploration, there is an urgent need for a device that can receive and image electron beams of different directions and energies. Summary of the Invention

[0006] The purpose of this invention is to overcome the problem that existing electron beam receiving and imaging devices can only receive and image electron beams in a known direction or in a certain direction. Therefore, an omnidirectional electron beam receiving and imaging device is proposed, which can receive and image electron beams of different directions and energies.

[0007] To solve the above-mentioned technical problems, the omnidirectional electron beam receiving device provided by the present invention includes: a structural housing, a grid, and a microchannel plate; characterized in that the receiving device further includes: an adjustable high-voltage electrode, a logic control module, and a high-voltage module; wherein,

[0008] The structural shell is a cylinder with an opening at one end and a hollow interior;

[0009] The receiving device includes a plurality of circular grids arranged in sequence and overlapping at their centers; the plurality of grids are disposed at the opening of the structural housing; the adjustable high-voltage electrode and the microchannel plate are arranged in sequence below the plurality of grids and located inside the structural housing;

[0010] The logic control module is connected to the high voltage module and is used to control the high voltage module to generate high voltage of different amplitudes and apply it to the adjustable high voltage electrode to generate positive high voltage.

[0011] The electron beam is accelerated along the axial direction under the attraction of the positive high voltage, thereby changing the trajectory of the electron beam and ensuring that the electron beam reaches the microchannel plate.

[0012] As an improvement to the above-mentioned device, the receiving device includes at least three layers of grids, and adjacent grids are insulated from each other.

[0013] As an improvement to the above-mentioned device, the grid precision of the grid is 0.1mm × 0.1mm, and each grid line of each layer of the grid is a good conductor.

[0014] As an improvement to the above-mentioned device, the logic control module controls the high voltage amplitude generated by the high voltage module to be positively correlated with the energy value of the electron beam.

[0015] To achieve another objective of the present invention, the present invention provides an omnidirectional electron beam imaging device, which is based on the above-described omnidirectional electron beam imaging device. The imaging device includes: a fluorescent screen and an optical imaging component disposed inside the structural housing and arranged sequentially below the microchannel plate; the electron beam is amplified by the microchannel plate and then converted into a light signal by the fluorescent screen; the optical imaging component uses the light signal to obtain a two-dimensional image of the electron beam.

[0016] As an improvement to the above-mentioned device, the imaging device further includes: a grid signal measurement module; wherein, the grid signal measurement module is connected to the plurality of grids respectively, and is used to detect the grid position corresponding to the electron beam passing through each grid layer, thereby obtaining the incident direction of the electron beam; the imaging device combines the two-dimensional imaging of the electron beam and the incident direction of the electron beam to obtain a three-dimensional imaging of the electron beam.

[0017] As an improvement to the above-mentioned device, the grid signal measurement module determines the grid position corresponding to the electron beam passing through each layer of the grid by detecting the pulse signals generated on the grid lines of each layer of the grid when the electron beam passes through the grid.

[0018] Compared to existing electron beam receiving and imaging devices, the advantages of this invention are as follows: The omnidirectional electron beam receiving and imaging device provided by this invention attracts electron beams and accelerates them along the axial direction through the positive high voltage generated by the adjustable high voltage electrode, ensuring that all electron beams reach the microchannel plate. This eliminates the need for rotation and increasing the opening size, enabling the reception and imaging of incident electron beams with different directions and energies. Furthermore, the overall size is small and the operation is simple. The imaging device provided by this invention also obtains the incident angle of the electron beam through a grid signal measurement module and combines it with two-dimensional imaging of the electron beam to obtain three-dimensional imaging, resulting in better imaging effects. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the operation of the omnidirectional electron beam imaging device provided in an embodiment of the present invention;

[0020] Figure 2 This is a schematic diagram of the omnidirectional electron beam imaging device provided in an embodiment of the present invention;

[0021] Figure 3 This is a schematic diagram of a grid provided in an embodiment of the present invention. Detailed Implementation

[0022] The technical solutions provided by the present invention will be further illustrated below with reference to the embodiments.

[0023] Example 1

[0024] The omnidirectional electron beam receiving device provided in this embodiment includes: a structural housing, a grid, and a microchannel plate; characterized in that the receiving device further includes: an adjustable high-voltage electrode, a logic control module, and a high-voltage module; wherein,

[0025] The structural shell is a cylinder with an opening at one end and a hollow interior;

[0026] The receiving device includes at least three layers of circular grids arranged sequentially and overlapping at their centers; the at least three layers of grids are disposed at the opening of the structural housing, and adjacent grids are insulated from each other; the grid precision of the grids is 0.1mm × 0.1mm, and each grid line is a good conductor.

[0027] The adjustable high-voltage electrode and the microchannel plate are sequentially arranged below the plurality of grids and located inside the structural housing;

[0028] The logic control module is connected to the high-voltage module and is used to control the high-voltage module to generate high voltage of different amplitudes and apply it to the adjustable high-voltage electrode to generate a positive high voltage; the logic control module controls the high voltage amplitude generated by the high-voltage module to be positively correlated with the energy value of the electron beam.

[0029] The electron beam is accelerated along the axial direction under the attraction of the positive high voltage, thereby changing the trajectory of the electron beam and ensuring that the electron beam reaches the microchannel plate.

[0030] Example 2

[0031] The omnidirectional electron beam imaging device provided in this embodiment, such as Figure 1 As shown, it consists of a grid, adjustable high-voltage electrodes, microchannel plate, fluorescent screen, optical imaging components, high-voltage module, logic control module, and grid signal measurement module.

[0032] The block diagram of the imaging device is as follows: Figure 2 As shown, the device has a cylindrical housing with a three-layer grid at the circular opening at the front, followed by an adjustable high-voltage electrode, a microchannel plate, a fluorescent screen, and an optical imaging assembly.

[0033] The function of the three-layer grid is to measure the direction of the incident electron beam. For example... Figure 3 As shown, the grid is circular with a grid precision of 0.1mm × 0.1mm. Each grid line is a good conductor, insulated from each other, and each is connected to a measurement module. When the incident electron beam passes through the three grid layers, signals are generated on the corresponding grid lines of each layer. The grid signal measurement module detects the pulse signals generated on the grid lines of each layer when the incident electron beam passes through the three grid layers; through signal analysis, the grid position corresponding to the electron beam passing through each layer can be determined, thus obtaining the direction of the incident electron beam. The adjustable high-voltage electrode functions to deflect the direction of the incident electron beam. Figure 2 As shown by the dashed trajectory of the incident electron beam, in the absence of external force, when the incident electron beam is approximately 180° horizontally relative to the opening of the device, it will reach the structural housing and cannot be received. To achieve omnidirectional reception of the electron beam, an adjustable high-voltage electrode is placed at the rear end of the grid. This electrode is loaded with a positive high voltage, accelerating the incident electrons along the axial direction, thereby changing the trajectory of the incident electron beam and guiding it to the microchannel plate. The high voltage applied to this electrode is adjustable to accommodate incident electron beams of different energies.

[0034] The incident electron beam is typically extremely weak. To detect the incident electron beam, a microchannel plate is used to amplify the incident electrons. A microchannel plate is a large-area array of electron multipliers with high spatial resolution.

[0035] The function of the fluorescent screen is to convert amplified electrons into light signals; the function of the optical imaging component is to perform two-dimensional imaging of the light signals.

[0036] The imaging device combines the two-dimensional imaging of the electron beam with the direction of the electron beam to obtain a three-dimensional image of the electron beam.

[0037] The device's logic control module controls the high-voltage module to generate high voltages of varying amplitudes, which are then applied to the adjustable high-voltage electrode. When the incident electron beam energy is high, the adjustable high-voltage electrode applies a high-amplitude voltage; when the incident electron beam energy is low, the adjustable high-voltage electrode applies a low-amplitude voltage.

[0038] As can be seen from the above detailed description of the present invention, the omnidirectional electron beam receiving device and imaging device provided by the present invention attract electron beams and accelerate them along the axial direction through the positive high voltage generated by the adjustable high voltage electrode, so that they all reach the microchannel plate. It can receive and image incident electron beams of different directions and energies without rotation or increasing the opening size. Moreover, the overall size is small and the operation is simple. The imaging device provided by the present invention also obtains the incident angle of the electron beam through the grid signal measurement module and obtains its three-dimensional image by combining the two-dimensional imaging of the electron beam, resulting in better imaging effect.

[0039] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to the embodiments, those skilled in the art should understand that modifications or equivalent substitutions to the technical solutions of the present invention do not depart from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.

Claims

1. An omnidirectional electron beam receiving device, comprising: The structure includes a housing, a grid, and a microchannel plate; characterized in that the receiving device further includes: an adjustable high-voltage electrode, a logic control module, and a high-voltage module; wherein, The structural shell is a cylinder with an opening at one end and a hollow interior; The receiving device includes a plurality of circular grids arranged in sequence and overlapping at their centers; the plurality of grids are disposed at the opening of the structural housing; the adjustable high-voltage electrode and the microchannel plate are arranged in sequence below the plurality of grids and located inside the structural housing; The logic control module is connected to the high voltage module and is used to control the high voltage module to generate high voltage of different amplitudes and apply it to the adjustable high voltage electrode to generate positive high voltage. The electron beam is accelerated along the axial direction under the attraction of the positive high voltage, thereby changing the trajectory of the electron beam and ensuring that the electron beam reaches the microchannel plate. The logic control module controls the high voltage amplitude generated by the high voltage module to be positively correlated with the energy value of the electron beam.

2. The omnidirectional electron beam receiving device according to claim 1, characterized in that, The receiving device includes at least three layers of grids, and adjacent grids are insulated from each other.

3. The omnidirectional electron beam receiving device according to claim 1, characterized in that, The grid precision of the grid is 0.1mm × 0.1mm, and each grid line of each layer of the grid is a good conductor.

4. An omnidirectional electron beam imaging device, implemented based on the omnidirectional electron beam imaging device according to claims 1-3, characterized in that, The imaging device includes: a fluorescent screen and an optical imaging component disposed inside the structural housing and arranged sequentially below the microchannel plate; the electron beam is amplified by the microchannel plate and then converted into a light signal by the fluorescent screen; the optical imaging component uses the light signal to obtain a two-dimensional image of the electron beam.

5. The omnidirectional electron beam imaging device according to claim 4, characterized in that, The imaging device further includes a grid signal measurement module; wherein the grid signal measurement module is connected to the plurality of grids respectively, and is used to detect the grid position corresponding to the electron beam passing through each grid layer, thereby obtaining the incident direction of the electron beam; the imaging device combines the two-dimensional imaging of the electron beam and the incident direction of the electron beam to obtain a three-dimensional imaging of the electron beam.

6. The omnidirectional electron beam imaging device according to claim 5, characterized in that, The grid signal measurement module determines the grid position corresponding to the electron beam passing through each grid layer by detecting the pulse signals generated on the grid lines of each grid layer when the electron beam passes through the grid.

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