Static elimination method and plasma treatment system

Abstract

The present invention provides a static elimination method and plasma processing system. One embodiment of the static elimination method includes: a step of generating a static elimination plasma after treating a substrate adsorbed on an electrostatic chuck with a treatment plasma; a step of stopping the adsorption voltage applied to an adsorption electrode after step a; a step of connecting the adsorption electrode to a ground line connected to ground via a resistor portion after step b, wherein the resistor portion can set a resistance value to at least one of a first resistance value and a second resistance value smaller than the first resistance value; a step of selecting a resistance value for the resistor portion before step c; and a step of setting the resistance value of the resistor portion to the resistance value selected in step d between steps d and c. According to the present invention, the occurrence of abnormal discharge can be suppressed and the voltage drop time can be adjusted.

Description

Technical Field

[0001] The present invention relates to a static elimination method and a plasma processing system. Background Art

[0002] There is known a technique for generating neutralizing plasma by grounding an adsorption electrode when releasing a substrate adsorbed on an electrostatic chuck (for example, see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2004-14868. Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present invention provides a technology capable of suppressing the occurrence of abnormal discharge and adjusting the voltage drop time.

[0008] Technical means to solve the problem

[0009] One embodiment of the present invention is a static elimination method, which eliminates static electricity from the electrostatic chuck and the substrate after treating the substrate adsorbed on the electrostatic chuck with a treatment plasma, wherein the substrate is adsorbed on the electrostatic chuck by applying an adsorption voltage to an adsorption electrode built into the electrostatic chuck, and the static elimination method is characterized in that it includes: step a, generating static elimination plasma after the treatment; step b, stopping the adsorption voltage applied to the adsorption electrode after step a; step c, connecting the adsorption electrode to a ground line connected to the ground via a resistor part after step b, wherein the resistor part is capable of setting a resistance value to at least either a first resistance value or a second resistance value smaller than the first resistance value; step d, selecting the resistance value of the resistor part before step c; and step e, setting the resistance value of the resistor part to the resistance value selected in step d between step d and step c.

[0010] Effects of the Invention

[0011] According to the present invention, it is possible to suppress the occurrence of abnormal discharge and adjust the voltage drop time. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic diagram showing an example of a plasma processing system according to an embodiment.

[0013] Figure 2 This is a diagram showing an example of a static elimination method according to an embodiment.

[0014] Figure 3 It is a diagram showing another example of the static elimination method according to the embodiment.

[0015] Figure 4 It is a diagram for explaining simulation conditions.

[0016] Figure 5 This is a diagram showing simulation results of the relationship between discharge resistance and voltage drop time.

[0017] Figure 6 This is a graph showing the temporal change in the voltage of the adsorption electrode in the example.

[0018] Figure 7 This is a graph showing temporal changes in the voltage of the adsorption electrode in a comparative example.

[0019] Figure 8 This is a schematic diagram showing another example of the plasma processing system according to the embodiment.

[0020] Description of Reference Numerals

[0021] 31 dielectric layer

[0022] 32 Adsorption electrode

[0023] 123, 123M resistor unit

[0024] G Glass substrate DETAILED DESCRIPTION

[0025] Hereinafter, non-limiting exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In all the drawings, the same or corresponding components or parts are denoted by the same or corresponding reference numerals, and repeated descriptions are omitted.

[0026] [Plasma treatment system]

[0027] Reference Figure 1 , an example of a plasma processing system according to an embodiment of the present invention is described. Figure 1 As shown, the plasma processing system 1 includes a processing container 10 , for example, made of aluminum or stainless steel, connected to a ground potential.

[0028] The processing container 10 is a vacuum container capable of reducing internal pressure. A feed port 11 is provided on the side of the processing container 10 for receiving and transferring substrates to be processed by plasma. The substrates may be, for example, rectangular glass substrates G. A gate valve 12 is provided at the feed port 11 to open and close the feed port. An exhaust port 13 is provided on the bottom surface of the processing container 10. A vacuum exhaust unit 15 is provided at the exhaust port 13 via an exhaust pipe 14. The vacuum exhaust unit 15 includes, for example, a vacuum pump and a pressure regulating valve. The exhaust port 13 may be provided at multiple locations.

[0029] A prism-shaped mounting table 3 having a rectangular planar shape is provided inside the processing container 10. A glass substrate G can be mounted on the mounting table 3. The mounting table 3 will be described in detail later.

[0030] Above the processing chamber 10, a spiral or ring-shaped inductive coupling antenna 70, serving as a plasma generating unit, is installed opposite the mounting table 3 through the metal window 2. An antenna chamber (not shown) is provided above the metal window 2 to house the inductive coupling antenna 70. The inductive coupling antenna 70 is connected to a power supply 72 for generating plasma via a matching device 71. Power supply 72 supplies power (high-frequency power for generating plasma) to the inductive coupling antenna 70, generating an electric field within the processing chamber 10 for generating plasma.

[0031] Metal Window 2 Figure 1 In the example, it is formed by a single component, but it can also be formed by a plurality of divided pieces, for example. The metal window 2 functions as a shower head for supplying a processing gas into the processing container 10. The metal window 2 seals the upper part of the processing container 10 via the insulating portion 16 and is supported by being suspended from the top of the antenna room. A plurality of gas supply holes 21 are formed on the lower surface of the metal window 2 opposite to the mounting surface of the mounting table 3. The metal window 2 has a gas dispersion chamber 20 connected to the gas supply holes 21 inside. A processing gas supply pipe 22 for supplying a processing gas to the gas dispersion chamber 20 is connected to the upper surface of the metal window 2. On the processing gas supply pipe 22, a processing gas supply source 23, a flow regulating portion M22 and a valve V22 are provided in sequence from the upstream side. The processing gas supply source 23 supplies a processing gas, such as an etching gas containing CF4, Cl2, or a gas for generating a static-eliminating plasma, such as Ar, N2, or O2, to the gas dispersion chamber 20 via the processing gas supply pipe 22.

[0032] The plasma processing system 1 is provided with a control unit 9. The control unit 9 controls various components of the plasma processing system 1. The control unit 9 includes, for example, a computer 90. The computer 90 includes, for example, a CPU 91, a storage unit 92, and a communication interface 93. The CPU 91 is configured to perform various control operations based on programs stored in the storage unit 92. The storage unit 92 includes at least one memory type selected from auxiliary storage devices such as RAM, ROM, HDD (Hard Disk Drive), and SSD (Solid State Drive). The communication interface 93 can communicate with the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

[0033] In addition, Figure 1In the example, the inductive coupling antenna 70 is provided across the metal window 2, but the present invention is not limited thereto. For example, the inductive coupling antenna 70 may be provided across a dielectric window. In this case, a shower head may be provided below the dielectric window in addition to the dielectric window.

[0034] Next, the mounting table 3 will be described. The mounting table 3 is constructed by stacking a spacer 35 and a base 33 in sequence from the bottom, and covering the side surfaces of the spacer 35 and the base 33 with a cover 38 made of, for example, ceramic. The mounting table 3 is arranged at the center of the bottom surface of the processing container 10 via an insulating layer 39. The base 33 is connected to the bias power supply 75 via a wiring 73. A matching device 74 for matching the bias power is provided on the wiring 73. When the bias power supply 75 is used to supply bias power as high-frequency power to the base 33, ions in the plasma of the processing gas generated in the processing container 10 using the generated source power can be introduced into the glass substrate G placed on the mounting table 3.

[0035] A heat transfer gas supply path 34 is provided within the mounting table 3. Its downstream end branches into multiple channels, each of which opens dispersedly on the upper surface of the mounting table 3, thereby forming a plurality of heat transfer gas supply ports 34a. The upstream end of the heat transfer gas supply path 34 is connected to a heat transfer gas supply pipe 62 provided outside the processing container 10. Furthermore, the upstream end of the heat transfer gas supply pipe 62 is connected to a heat transfer gas supply source 64 via a flow rate regulator 63.

[0036] A circular refrigerant flow path 36 extending in the circumferential direction is provided inside the spacer 35. A heat transfer medium regulated to a predetermined temperature by a refrigeration unit (not shown) is circulated in the refrigerant flow path 36, and the processing temperature of the glass substrate G can be controlled by the temperature of the heat transfer medium.

[0037] In the mounting table 3, lifting pins (not shown) used to transfer the glass substrate G with the external transport arm are arranged to pass through the mounting table 3 and the bottom plate of the processing container 10 in the vertical direction, and can protrude from and sink into the surface of the mounting table 3.

[0038] A dielectric layer 31 is provided on the upper surface of a base 33. A horizontally extending metal adsorption electrode 32 is embedded in the dielectric layer 31. The dielectric layer 31 and adsorption electrode 32 constitute an electrostatic chuck. The adsorption electrode 32 is connected to the power supply unit 100 via a wiring 41 provided with a voltage-adjusting resistor 42.

[0039] The power supply unit 100 includes a power supply line 110 and a ground line 120. The power supply line 110 and the ground line 120 are connected to a wiring 41 via a resistor 42 for voltage adjustment.

[0040] The power supply line 110 is connected in series to a DC power supply 111, a switch 112, and a resistor 113. The DC power supply 111 applies a predetermined DC voltage, for example, within a range of 0 V to 6000 V, to the adsorption electrode 32 based on a voltage setting value input from the control unit 9. The switch 112 switches the DC voltage applied from the DC power supply 111 to the adsorption electrode 32 between on (supply) and off (stop).

[0041] Ground line 120 is connected in parallel with power line 110. Ground line 120 branches from power line 110 between voltage adjustment resistor 42 and resistor 113 and is grounded via switch 121, rotary switch 122, and resistor section 123. Rotary switch 122 changes the resistance value of ground line 120 by switching the contact. Resistor section 123 includes four resistors 123a through 123d. The four resistors 123a through 123d have different resistance values. For example, resistor 123a has a resistance value of 1 MΩ, resistor 123b has a resistance value of 500 kΩ, resistor 123c has a resistance value of 250 kΩ, and resistor 123d has a resistance value of 100 kΩ.

[0042] In addition, Figure 1 In the example shown, the resistor section 123 includes four resistors 123a to 123d, but the present invention is not limited thereto. For example, the resistor section 123 may include two or three resistors, or five or more resistors.

[0043] In addition, Figure 1 In the illustrated example, the ground line 120 is provided inside the power supply unit 100 , but the present invention is not limited thereto. For example, the ground line 120 may be provided outside the power supply unit 100 .

[0044] [Static removal method]

[0045] Reference Figure 2 , an example of the static elimination method of the embodiment is described. In the following, a method of eliminating static electricity from the electrostatic chuck and the glass substrate G after the glass substrate G adsorbed on the electrostatic chuck is treated with a treatment plasma in the plasma treatment system 1 is described as an example, wherein the glass substrate G is adsorbed on the electrostatic chuck by applying an adsorption voltage to the adsorption electrode 32 built into the electrostatic chuck. In addition, Figure 2 At the start of the illustrated process, the switch 112 is turned on and the switch 121 is turned off.

[0046] In step S11, the control unit 9 selects the resistance value of the resistor 123. For example, the control unit 9 selects the resistance value of the resistor 123 based on association information pre-stored in the storage unit 92, which associates the resistance value of the resistor 123 with the time required for the adsorption electrode 32 to drop to a predetermined voltage (hereinafter referred to as "voltage drop time"). For example, to relatively shorten the voltage drop time, the control unit 9 selects a resistance value smaller than the currently set resistance value of the resistor 123.

[0047] In step S12, the control unit 9 sets the resistance value selected in step S11 as the resistance value of the resistor 123. For example, the control unit 9 controls the rotary switch 122 to switch the contact point so that the resistance value selected in step S11 is achieved.

[0048] In step S13, the control unit 9 turns on the static-eliminating plasma. For example, the control unit 9 supplies a gas such as Ar, N2, or O2 from the processing gas supply source 23 to the processing container 10 for generating the static-eliminating plasma, and supplies the inductive coupling antenna 70 with power from the power supply 72, thereby generating the static-eliminating plasma within the processing container 10.

[0049] In step S14, the control unit 9 turns off the adsorption voltage. For example, after a predetermined time has passed since the neutralizing plasma is generated in the processing chamber 10, the control unit 9 controls the switch 112 to turn off, thereby turning off the DC voltage (adsorption voltage) applied from the DC power supply 111 to the adsorption electrode 32.

[0050] In step S15, the control unit 9 connects the adsorption electrode 32 to the ground line. For example, the control unit 9 turns on the switch 121, thereby grounding the adsorption electrode 32 via the resistor 123. At this time, the resistance value of the resistor 123 is set to the resistance value selected in step S11, so the voltage at the adsorption electrode 32 decreases over a period of time corresponding to the selected resistance value. For example, the smaller the resistance value selected in step S11, the easier it is for the charge remaining on the electrostatic chuck to discharge through the ground line 120, thus shortening the voltage drop time. After step S15, the control unit 9 terminates the process.

[0051] Reference Figure 3 , another example of the static elimination method of the embodiment is described. Figure 3 In the static elimination method of the embodiment shown, the resistance value of the resistor 123 is selected and set after the adsorption voltage is turned off. Figure 2 The static elimination method shown is different. Figure 3 At the start of the illustrated process, the switch 112 is on and the switch 121 is off.

[0052] In step S21, the control unit 9 turns on the static-eliminating plasma. For example, the control unit 9 supplies a gas such as Ar, N2, or O2 from the processing gas supply source 23 to the processing container 10 for generating the static-eliminating plasma, and supplies the inductive coupling antenna 70 with power from the power supply 72, thereby generating the static-eliminating plasma within the processing container 10.

[0053] In step S22, the control unit 9 turns off the adsorption voltage. For example, after a predetermined time has passed since the neutralizing plasma is generated in the processing chamber 10, the control unit 9 controls the switch 112 to turn off, thereby turning off the DC voltage (adsorption voltage) applied from the DC power supply 111 to the adsorption electrode 32.

[0054] In step S23, the control unit 9 selects the resistance value of the resistor unit 123. For example, the control unit 9 selects the resistance value of the resistor unit 123 based on association information pre-stored in the storage unit 92, which associates the resistance value of the resistor unit 123 with the voltage drop time. For example, when the voltage drop time is relatively shortened, the control unit 9 selects a resistance value smaller than the currently set resistance value of the resistor unit 123.

[0055] In step S24, the control unit 9 sets the resistance value selected in step S23 as the resistance value of the resistor 123. For example, the control unit 9 controls the rotary switch 122 to switch the contact point so that the resistance value selected in step S23 is achieved.

[0056] In step S25, the control unit 9 connects the adsorption electrode 32 to the ground line. For example, the control unit 9 controls the switch 121 to be turned on, thereby grounding the adsorption electrode 32 via the resistor 123. At this time, the resistance value of the resistor 123 is set to the resistance value selected in step S23, so the voltage at the adsorption electrode 32 decreases over a period of time corresponding to the selected resistance value. For example, the smaller the resistance value selected in step S23, the easier it is for the charge remaining on the electrostatic chuck to discharge through the ground line 120, thus shortening the voltage drop time. After step S25, the control unit 9 terminates the process.

[0057] As described above, according to the static elimination method of the embodiment, after the static elimination plasma is turned on, the adsorption voltage is turned off. This can suppress the occurrence of abnormal discharge during the static elimination plasma.

[0058] Furthermore, according to the static elimination method of the embodiment, the resistance value of the resistor 123 provided midway along the ground line 120 is changed before connecting the adsorption electrode 32 to the ground line 120. This allows the voltage drop time to be adjusted. For example, by reducing the resistance value of the resistor 123, the voltage drop time can be shortened.

[0059] In addition, Figure 2 and Figure 3 In the static elimination method of the embodiment shown, the case where the resistance value of the resistor portion 123 is selected and set after the glass substrate G adsorbed on the electrostatic chuck is treated with the treatment plasma is described, but the present invention is not limited to this. For example, the resistance value of the resistor portion 123 may be selected and set in advance before the glass substrate G adsorbed on the electrostatic chuck is treated with the treatment plasma. In addition, Figure 2 and Figure 3 In the static elimination method of the illustrated embodiment, the control unit 9 sets the resistance value of the resistor 123 in steps S12 and S24 . However, the resistance value may be set manually, for example, by switching the contacts of the rotary switch 122 .

[0060] [Simulation results]

[0061] The analysis was performed by simulating the voltage drop time when the resistance value of the resistor 123 was changed. Figure 4 As shown in FIG. 1 , when the resistance value of the resistor 123 included in the power supply unit 100 is changed to 1 MΩ, 500 kΩ, 250 kΩ, and 100 kΩ, the time required for the voltage of the adsorption electrode 32 to drop to 100 V is analyzed.

[0062] Figure 5 1 is a diagram showing the simulation results of the relationship between the resistance value (discharge resistance) of the resistor portion 123 and the voltage drop time. Figure 5 As shown, the time required for the voltage of the adsorption electrode 32 to drop to 100 V when the discharge resistance is set to 1 MΩ, 500 kΩ, 250 kΩ, and 100 kΩ is 8.97 seconds, 5.03 seconds, 1.93 seconds, and 0.34 seconds, respectively. This result shows that reducing the discharge resistance can shorten the voltage drop time.

[0063] Figure 5 The correlation information in which the discharge resistance and the voltage drop time are correlated is stored in, for example, the storage unit 92 and is used when selecting the resistance value of the resistor 123 in the static elimination method of the above-described embodiment.

[0064] [Example]

[0065] In the plasma processing system 1 of the embodiment, the voltage drop time was measured when the adsorption voltage was turned off after the neutralizing plasma was turned on, and the adsorption electrode 32 was connected to the ground line 120 connected to the ground via the resistor 123 (Example). In the Example, the resistance value (discharge resistance) of the resistor 123 was changed to 1 MΩ, 500 kΩ, 250 kΩ, and 100 kΩ.

[0066] Figure 6 Graph showing the change in voltage of the adsorption electrode 32 over time in the embodiment. Figure 6 In FIG. 1 , the horizontal axis represents time [seconds], the left vertical axis represents the voltage [V] of the adsorption electrode 32 , and the right vertical axis represents the generation source electric power [W] supplied from the generation source power supply 72 to the inductive coupling antenna 70 . Figure 6 In FIG. 1 , the solid line, the dashed line, the dotted line, and the dashed-dotted line represent the voltages when the discharge resistance is 1 MΩ, 500 kΩ, 250 kΩ, and 100 kΩ, respectively, and the thick solid line represents the generated source electric power.

[0067] like Figure 6 As shown in the figure, it can be seen that the smaller the discharge resistance, the shorter the time it takes for the voltage at the adsorption electrode 32 to drop after the adsorption voltage is turned off. Specifically, when the discharge resistance is set to 1 MΩ, 500 kΩ, 250 kΩ, and 100 kΩ, the time required for the voltage at the adsorption electrode 32 to drop to 100 V is 22.2 seconds, 14.4 seconds, 7.5 seconds, and 0.5 seconds, respectively. These results confirm that experiments conducted using the plasma processing system 1 according to the embodiment also exhibit the same trend as the simulation results. In other words, reducing the discharge resistance can shorten the voltage drop time.

[0068] in addition, Figure 6 The correlation information in which the discharge resistance and the voltage drop time are correlated is stored in, for example, the storage unit 92 and is used when selecting the resistance value of the resistor 123 in the static elimination method of the above-described embodiment.

[0069] For comparison, in the plasma processing system 1 of the embodiment, the adsorption voltage was turned off, the adsorption electrode 32 was connected to the ground line 120, which was grounded via the resistor 123, and the voltage drop time when the neutralizing plasma was turned on was measured (comparative example). In the comparative example, the resistance value (discharge resistance) of the resistor 123 was set to 1 MΩ, and the susceptor 33 was grounded while the adsorption voltage was turned off. The comparative example used the same conditions as the conventional neutralizing method. By grounding the susceptor 33 while turning off the adsorption voltage, neutralization can be achieved earlier. However, in the embodiment of the present invention, the neutralizing plasma is already formed when the adsorption voltage is turned off. Because of the possibility of inducing additional abnormal discharge, the susceptor 33 cannot be grounded.

[0070] Figure 7 Graph showing the change in voltage of the adsorption electrode 32 over time in the comparative example. Figure 7 In FIG, the horizontal axis represents time [seconds], the vertical axis on the left represents the voltage [V] of the adsorption electrode 32, and the vertical axis on the right represents the generation source power [W] supplied from the generation source power supply 72 to the inductive coupling antenna 70. Figure 7In FIG. 1 , the solid line represents the voltage when the discharge resistance is 1 MΩ, and the thick solid line represents the generated source power.

[0071] like Figure 7 As shown, the time required for the voltage of the adsorption electrode 32 to drop to 100 V is 6.8 seconds.

[0072] The results of the above examples and comparative examples show that, while the time required to drop to 100V is shorter in the comparative example with a discharge resistance of 1MΩ, the voltage drop time can be achieved by reducing the discharge resistance (e.g., to 250kΩ) in the example in which the adsorption voltage is turned off after the neutralizing plasma is turned on, while the voltage drop time can be achieved by reducing the discharge resistance (e.g., to 250kΩ) in the example in which the adsorption voltage is turned off after the neutralizing plasma is turned on. Furthermore, it was shown that, in the example in which the adsorption voltage is turned off after the neutralizing plasma is turned on, further reducing the discharge resistance (e.g., to 100kΩ) can shorten the voltage drop time compared to the comparative example in which the adsorption voltage is turned off after the neutralizing plasma is turned on. Furthermore, in the comparative example, reducing the discharge resistance would cause a sharp voltage change when the adsorption voltage is turned off, potentially leading to abnormal discharge that could damage semiconductor devices formed on the substrate. Therefore, reducing the discharge resistance is not feasible.

[0073] [Variations of the Plasma Processing System]

[0074] Reference Figure 8 , a modified example of the plasma processing system of the embodiment is described. The resistor portion in the plasma processing system 1M of the modified example is a variable resistor, which is different from Figure 1 The plasma processing system 1 of the embodiment shown is different. Hereinafter, the difference will be mainly described.

[0075] The power supply unit 100M includes a power supply line 110 and a ground line 120. The power supply line 110 and the ground line 120 are connected to a wiring 41 via a resistor 42 for voltage adjustment.

[0076] The power supply line 110 is connected in series with a DC power supply 111, a switch 112, and a resistor 113. The DC power supply 111 applies a predetermined DC voltage, for example, within a range of 0 V to 6000 V, to the adsorption electrode 32 based on a voltage setting value input from the control unit 9. The switch 112 switches the DC voltage applied from the DC power supply 111 to the adsorption electrode 32 on and off.

[0077] Ground line 120 is connected in series with power line 110. Ground line 120 branches from power line 110 between voltage adjustment resistor 42 and resistor 113 and is grounded via switch 121 and resistor 123M. Resistor 123M is a variable resistor capable of setting a plurality of different resistance values.

[0078] In addition, Figure 8 In the illustrated example, the resistor portion 123M is described as a variable resistor, but the present invention is not limited thereto. For example, the resistor portion 123M may include a plurality of resistors having resistance values ​​different from those of the variable resistor.

[0079] In addition, Figure 8 In the illustrated example, the ground line 120 is provided inside the power supply unit 100M, but the present invention is not limited thereto. For example, the ground line 120 may be provided outside the power supply unit 100M.

[0080] The embodiments disclosed in the specification are illustrative in all respects and should not be considered restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the appended claims and the gist thereof.

Claims

1. A method for removing static electricity from the electrostatic chuck and the substrate after treating the substrate adsorbed on the electrostatic chuck with a treatment plasma, wherein: The substrate is adsorbed on the electrostatic chuck by applying an adsorption voltage to an adsorption electrode built into the electrostatic chuck. The static elimination method is characterized by comprising: Step a, after the treatment, without stopping the adsorption voltage applied to the adsorption electrode during the treatment, and generating a neutralizing plasma; Step b, after step a, stopping the adsorption voltage applied to the adsorption electrode; Step c, after step b, connecting the adsorption electrode to a ground line connected to the ground via a resistor, wherein the resistor is capable of setting a resistance value to at least one of a first resistance value and a second resistance value smaller than the first resistance value; Step d, before step c, selecting a resistance value of the resistor portion; and Step e: between step d and step c, setting the resistance value of the resistor portion to the resistance value selected in step d.

2. The static elimination method according to claim 1, wherein: In the step d, the second resistance value is selected in order to relatively shorten the voltage drop time of the adsorption electrode.

3. The static elimination method according to claim 1 or 2, wherein: In the step d, the resistance value of the resistor section is selected based on correlation information obtained by correlating the resistance value of the resistor section with the voltage drop time of the adsorption electrode.

4. A plasma processing system, characterized in that: include: a processing vessel for processing a substrate using a processing plasma; a plasma generating portion for generating the processing plasma; a loading platform, which is disposed in the processing container and includes an electrostatic chuck for adsorbing the substrate; an adsorption electrode built into the electrostatic chuck; a DC power supply connected to the adsorption electrode and applying an adsorption voltage for adsorbing the substrate; a grounding line connected to the adsorption electrode in parallel with the DC power supply and grounded via a resistor; and a control unit that controls the adsorption voltage applied to the adsorption electrode to generate neutralizing plasma without stopping the adsorption voltage applied to the adsorption electrode during the process after the process, and then stops the adsorption voltage applied to the adsorption electrode; The resistance value of the resistor portion can be set to at least one of a first resistance value and a second resistance value smaller than the first resistance value.

5. The plasma processing system according to claim 4, wherein: The resistor section includes a first resistor having the first resistance value and a second resistor having the second resistance value. The first resistor and the second resistor are provided in parallel and are switchable.

6. The plasma processing system according to claim 4 or 5, wherein: The resistor section includes a variable resistor.

7. The plasma processing system according to claim 4 or 5, wherein: The plasma generating unit can generate neutralizing plasma.

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