Method for manufacturing display panel and display panel

Abstract

The present invention discloses a method for manufacturing a display panel and a display panel. The method includes providing a substrate; forming an amorphous silicon layer on the substrate; and performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each drive transistor in the same manner. Embodiments of the present invention improve the display uniformity of the display panel.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a method for manufacturing a display panel and the display panel. Background Art

[0002] With the development of display technology, people have higher and higher requirements on the display effect of display panels. However, existing display panels have the problem of uneven display. Summary of the Invention

[0003] The present invention provides a method for manufacturing a display panel and the display panel, so as to improve the display uniformity of the display panel.

[0004] According to one aspect of the present invention, a method for manufacturing a display panel is provided, comprising:

[0005] providing a substrate;

[0006] forming an amorphous silicon layer on the substrate;

[0007] The amorphous silicon region corresponding to each driving transistor is crystallized by excimer laser annealing in the same manner.

[0008] Optionally, the amorphous silicon region corresponding to each driving transistor is subjected to excimer laser annealing crystallization in the same manner, including:

[0009] The amorphous silicon region corresponding to each of the driving transistors is subjected to n excimer laser annealing crystallizations, and the n excimer laser irradiation positions of the n excimer laser annealing crystallizations of the amorphous silicon region corresponding to each of the driving transistors are respectively the same as the n excimer laser irradiation positions of the n excimer laser annealing crystallizations of the amorphous silicon regions corresponding to other driving transistors, and the total coverage range of the n excimer laser irradiation positions of the same driving transistor covers the amorphous silicon region corresponding to the driving transistor, wherein n is a positive integer greater than or equal to 2.

[0010] Optionally, the excimer laser irradiation positions of at least two of the n excimer laser annealing crystallizations of the amorphous silicon region corresponding to the same driving transistor are different, or the n excimer laser irradiation positions of the n excimer laser annealing crystallizations of the amorphous silicon region corresponding to the same driving transistor are all the same.

[0011] Optionally, the amorphous silicon region corresponding to each driving transistor is subjected to excimer laser annealing crystallization in the same manner, including:

[0012] The amorphous silicon region corresponding to each driving transistor is subjected to excimer laser annealing crystallization at the same excimer laser irradiation position, and the center of the amorphous silicon region corresponding to each driving transistor is located on a symmetric line of the excimer laser irradiation spot.

[0013] Optionally, the amorphous silicon region corresponding to each driving transistor is subjected to excimer laser annealing crystallization in the same manner, including:

[0014] The amorphous silicon regions corresponding to the driving transistors in the same row or the same column are simultaneously subjected to excimer laser annealing and crystallization using the same excimer laser beam.

[0015] Optionally, before performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, the process further includes:

[0016] Patterning the amorphous silicon layer to form amorphous silicon pattern regions corresponding to the plurality of driving transistors;

[0017] Performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner includes:

[0018] Each of the amorphous silicon pattern regions is subjected to excimer laser annealing and crystallization in the same manner to form polysilicon pattern regions corresponding to the plurality of driving transistors.

[0019] Optionally, after performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, the method further includes:

[0020] The crystallized amorphous silicon layer is patterned to form polysilicon pattern regions corresponding to the plurality of driving transistors.

[0021] Optionally, the method further includes:

[0022] While the amorphous silicon region corresponding to the driving transistor is subjected to excimer laser annealing and crystallization, the amorphous silicon region corresponding to the switching transistor is subjected to excimer laser annealing and crystallization.

[0023] Optionally, after forming the polysilicon pattern regions corresponding to the plurality of driving transistors respectively, the method further includes:

[0024] Processing the polysilicon pattern to form a source region, a drain region and a channel region;

[0025] forming other film layers of the driving transistor;

[0026] A light-emitting functional layer is formed.

[0027] According to another aspect of the present invention, a display panel is provided, which is manufactured using any of the display panel manufacturing methods described in the present invention.

[0028] The technical solution of the embodiment of the present invention performs excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, so that the crystallization conditions of the amorphous silicon region corresponding to each driving transistor are the same, thereby making the threshold voltage of each driving transistor the same or similar, and the electrical characteristics of each driving transistor the same or similar, so that the display characteristics of each sub-pixel of the entire display panel are the same or similar, thereby improving display uniformity.

[0029] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 is a flow chart of a method for manufacturing a display panel provided by an embodiment of the present invention;

[0032] Figure 2 is a schematic diagram of a display panel provided by an embodiment of the present invention;

[0033] Figure 3 is a schematic diagram of another display panel provided by an embodiment of the present invention;

[0034] Figure 4 is a flow chart of another method for manufacturing a display panel provided by an embodiment of the present invention;

[0035] Figure 5 is a schematic diagram of another display panel provided by an embodiment of the present invention;

[0036] Figure 6 is a schematic diagram of another display panel provided by an embodiment of the present invention;

[0037] Figure 7 is a flow chart of another method for manufacturing a display panel provided by an embodiment of the present invention;

[0038] Figure 8 This is a flow chart of another method for manufacturing a display panel provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0039] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0040] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0041] As mentioned in the background art, existing display panels have the problem of uneven display. Through research, the inventors found that the reason for this problem is that the characteristics of the driving transistors in low-temperature polycrystalline silicon-active organic light-emitting diode (LTPS-AMOLED) display panels are greatly affected by the crystallization of polycrystalline silicon (P-Si). In the existing technology, after the amorphous silicon (a-Si) film is formed, the entire surface of a-Si is crystallized into P-Si at low temperature using an excimer laser annealing (ELA) crystallization process. However, due to the influence of the spacing between the two adjacent light beams irradiating a-Si in the ELA crystallization process, the P-Si crystallization has periodic variations, resulting in uneven crystallization of the P-Si layer. As a result, after the P-Si layer is patterned to form the driving transistors, the characteristics of the driving transistors of different sub-pixels are inconsistent. As a result, LTPS-AMOLED display panels without compensation circuits cause uneven display due to the differences in driving crystal characteristics between pixels.

[0042] In view of the above problems, an embodiment of the present invention provides a method for manufacturing a display panel. Figure 1 is a flow chart of a method for manufacturing a display panel provided by an embodiment of the present invention, with reference to Figure 1 , the method comprising:

[0043] S110, providing a substrate.

[0044] The substrate is a transparent substrate, which can be a hard substrate or a flexible substrate.

[0045] S120 , forming an amorphous silicon layer on the substrate.

[0046] Here, the amorphous silicon layer is formed on the entire surface of the substrate.

[0047] S130 , performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner.

[0048] The display panel includes multiple sub-pixels, each of which includes a driving circuit and an organic light-emitting unit. The driving circuit is used to drive the organic light-emitting unit to emit light. The driving circuit includes a driving transistor, which is used to output a driving current to the organic light-emitting unit to drive the organic light-emitting unit to emit light. The threshold voltage of the driving transistor has a certain impact on the driving current. The driving transistor includes an active layer formed of a polysilicon layer. The crystallinity of the polysilicon layer has a certain impact on the threshold voltage.

[0049] Figure 2 is a schematic diagram of a display panel provided by an embodiment of the present invention, with reference to Figure 2 When the display panel is manufactured, the region 10 corresponding to each sub-pixel is determined, and the position of each driving transistor is determined. After the amorphous silicon layer 30 is formed, the amorphous silicon region 11 corresponding to each driving transistor on the amorphous silicon layer can be determined. The amorphous silicon region 11 corresponding to each driving transistor is subjected to excimer laser annealing crystallization in the same manner. This can be performed the same number of times on the amorphous silicon region 11 corresponding to each driving transistor, and each time the excimer laser annealing crystallization is performed, the excimer laser irradiation position of the amorphous silicon regions corresponding to different driving transistors is the same. The same excimer laser irradiation position of the amorphous silicon regions corresponding to different driving transistors means that when the different driving transistors are crystallized, the relative position between the irradiation position of the excimer laser beam and the amorphous silicon region corresponding to the driving transistor is the same.

[0050] The specific crystallization method can be: the excimer laser annealing crystallization times of the amorphous silicon region 11 corresponding to each driving transistor is one, and the excimer laser irradiation position of the amorphous silicon region 11 corresponding to each driving transistor is the same when crystallizing. For example, Figure 2The excimer laser annealing crystallization of the amorphous silicon region corresponding to each driving transistor is performed multiple times. The excimer laser irradiation positions corresponding to the multiple crystallizations of the amorphous silicon region corresponding to the same driving transistor can be the same or different. When the irradiation positions corresponding to the multiple crystallizations of the same driving transistor are different, the multiple irradiation positions used for the multiple crystallizations of the amorphous silicon region 11 corresponding to each driving transistor correspond to the multiple irradiation positions used for the multiple crystallizations of the other driving transistors in a one-to-one manner. For example, each driving transistor is crystallized once using the first irradiation position 21 and the second irradiation position (not shown in the figure).

[0051] In the embodiment of the present invention, the amorphous silicon region corresponding to each driving transistor is crystallized by excimer laser annealing in the same manner, so that the crystallization conditions of the amorphous silicon region corresponding to each driving transistor are the same, thereby making the threshold voltage of each driving transistor the same or similar, and the electrical characteristics of each driving transistor the same or similar, so that the display characteristics of each sub-pixel of the entire display panel are the same or similar, thereby improving display uniformity.

[0052] The specific crystallization method of the driving transistor is described below:

[0053] Optionally, the amorphous silicon region corresponding to each driving transistor is subjected to excimer laser annealing crystallization in the same manner, including:

[0054] The amorphous silicon region corresponding to each driving transistor is subjected to n excimer laser annealing crystallizations, and the n excimer laser irradiation positions of the n excimer laser annealing crystallizations of the amorphous silicon region corresponding to each driving transistor correspond one-to-one to the n excimer laser irradiation positions of the n excimer laser annealing crystallizations of the amorphous silicon region corresponding to other driving transistors, and the total coverage range of the n excimer laser irradiation positions of the amorphous silicon region corresponding to the same driving transistor covers the amorphous silicon region corresponding to the driving transistor, wherein n is a positive integer greater than or equal to 2.

[0055] This arrangement ensures that the crystallization conditions of different drive transistors are uniform, and the threshold voltage of each drive transistor is the same or similar, resulting in the same or similar display characteristics for each sub-pixel across the entire display panel, improving display uniformity. Furthermore, multiple crystallizations further enhance the crystallization conditions of the amorphous silicon region corresponding to each drive transistor, further improving the characteristics of the drive transistor and the display quality of the display panel. Furthermore, the total coverage of the n excimer laser irradiation positions for the same drive transistor is set to cover the amorphous silicon region corresponding to the drive transistor, ensuring that the entire amorphous silicon region is converted to polycrystalline silicon, thereby improving the drive characteristics of the drive transistor.

[0056] It should be noted that the n excimer laser irradiation positions can be all the same, all different, or partially different, and this embodiment does not impose any specific restrictions. The embodiment also does not impose any specific restrictions on the order in which different drive transistors are crystallized during crystallization. For example, one drive transistor can be crystallized n times, and then the next drive transistor can be crystallized n times. Alternatively, each drive transistor can be crystallized once using the same excimer laser irradiation position, and then each drive transistor can be crystallized once using the next excimer laser irradiation position, until n crystallizations are completed.

[0057] Optionally, the excimer laser irradiation positions of the n excimer laser annealing crystallizations of the amorphous silicon region corresponding to the same driving transistor are all the same.

[0058] Specifically, by setting n times of excimer laser annealing crystallization to use the same irradiation position, the number of excimer laser alignments can be reduced, and the difficulty of excimer laser alignment can be reduced.

[0059] Optionally, in the n times of excimer laser annealing crystallization of the amorphous silicon region corresponding to the same driving transistor, the excimer laser irradiation positions of at least two times are different.

[0060] With this arrangement, different regions of the amorphous silicon region corresponding to the driving transistor can be crystallized to different degrees as needed, so that the crystallized polysilicon layer better meets the characteristic requirements of the driving transistor, thereby improving the driving characteristics of the driving transistor and the display effect of the display panel.

[0061] Figure 3 is a schematic diagram of another display panel provided by an embodiment of the present invention, with reference to Figure 2 and Figure 3 , Figure 2 and Figure 3 1 and 2 show regions 10 corresponding to a plurality of sub-pixels, an amorphous silicon region 11 corresponding to a driving transistor in each sub-pixel, and a first irradiation position 21 and a second irradiation position 22 of the excimer laser.

[0062] refer to Figure 2 , the amorphous silicon region 11 corresponding to each driving transistor can adopt the first irradiation position 21 during n times of excimer laser annealing crystallization. Figure 3 The amorphous silicon region 11 corresponding to each driving transistor can be crystallized by excimer laser annealing using multiple irradiation positions such as a first irradiation position 21 and a second irradiation position 22.

[0063] Optionally, the amorphous silicon region corresponding to each driving transistor is subjected to excimer laser annealing crystallization in the same manner, including: performing excimer laser annealing crystallization once at the same excimer laser irradiation position on the amorphous silicon region corresponding to each driving transistor, and the center of the amorphous silicon region corresponding to each driving transistor is located on the symmetry line of the excimer laser irradiation spot.

[0064] Specifically, refer to Figure 2 When the amorphous silicon area corresponding to the driving transistor is subjected to excimer laser annealing crystallization, it is necessary to ensure that the excimer laser irradiation position covers the amorphous silicon area, and since the symmetry line (i.e., the center position) of the excimer laser irradiation spot is the point with the strongest energy, by setting the center of the amorphous silicon area 11 corresponding to the driving transistor to be located on the symmetry line of the excimer laser irradiation spot, the center of the amorphous silicon area is the point with the strongest energy, thereby ensuring that all areas of the entire amorphous silicon area can be better crystallized.

[0065] The above description of the crystallization method of the driving transistor is based on a single driving transistor as an example. In actual crystallization, the driving transistor can be crystallized in units of regions, exemplarily in units of rows or columns, and the amorphous silicon regions corresponding to a row or column of driving transistors are crystallized each time.

[0066] Optionally, the amorphous silicon region corresponding to each driving transistor is subjected to excimer laser annealing crystallization in the same manner, including:

[0067] The amorphous silicon regions corresponding to the same row driving transistors or the same column driving transistors are simultaneously subjected to excimer laser annealing and crystallization using the same excimer laser beam.

[0068] Specifically, refer to Figure 2 and Figure 3 Each crystallization may be performed on the amorphous silicon regions 11 corresponding to a row of drive transistors or multiple rows of drive transistors or a column of drive transistors or multiple columns of drive transistors, which is not specifically limited in this embodiment. Figure 2-3 The figure illustrates the crystallization of amorphous silicon regions 11 corresponding to a row of driver transistors at a time, with each first irradiation position 21 covering a row of driver transistors. By crystallizing amorphous silicon regions 11 corresponding to driver transistors on a row-by-row basis, the center-to-center distance between excimer laser beams during the crystallization process is increased to equal the center-to-center distance between driver transistor rows. The center-to-center distance between excimer laser beams has been increased from 15-25 μm to approximately 55-60 μm, improving crystallization efficiency and increasing production capacity.

[0069] Figure 4 This is a flow chart of another method for manufacturing a display panel provided by an embodiment of the present invention, with reference to Figure 4 , the method comprising:

[0070] S110, providing a substrate.

[0071] S120 , forming an amorphous silicon layer on the substrate.

[0072] S121 , patterning the amorphous silicon layer to form amorphous silicon pattern regions corresponding to the plurality of driving transistors.

[0073] S131 , performing excimer laser annealing and crystallization on each of the amorphous silicon pattern regions in the same manner to form polysilicon pattern regions corresponding to the plurality of driving transistors.

[0074] Specifically, Figure 5 is a schematic diagram of another display panel provided by an embodiment of the present invention, Figure 6 is a schematic diagram of another display panel provided by an embodiment of the present invention, with reference to Figure 5 and Figure 6 The amorphous silicon layer may be patterned first to form a plurality of amorphous silicon pattern regions 12. The amorphous silicon layer may be patterned using a photolithography process.

[0075] In this embodiment, the amorphous silicon layer is first patterned to form amorphous silicon pattern areas 12 corresponding to the multiple driving transistors. Then, each amorphous silicon pattern area 12 is crystallized by excimer laser annealing in the same manner to form polycrystalline silicon pattern areas corresponding to the multiple driving transistors. Since the amorphous silicon layer has been patterned during crystallization, the amorphous silicon pattern area 12 can be crystallized more accurately, thereby reducing the differences between different driving transistors and improving the display uniformity of the display panel.

[0076] Figure 7 This is a flow chart of another method for manufacturing a display panel provided by an embodiment of the present invention, with reference to Figure 7 , the method comprising:

[0077] S110, providing a substrate;

[0078] S120, forming an amorphous silicon layer on the substrate;

[0079] S130 , performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner.

[0080] S140 , patterning the crystallized amorphous silicon layer to form polysilicon pattern regions corresponding to the plurality of driving transistors.

[0081] Specifically, refer to Figure 2 and Figure 3After the amorphous silicon layer is formed, the amorphous silicon region 11 corresponding to the driving transistor can be directly determined according to the position of the driving transistor, and the amorphous silicon region 11 can be directly crystallized. Since there is an alignment mark on the substrate, the alignment mark can be used to complete the precise alignment during crystallization.

[0082] Optionally, the method for manufacturing the display panel further includes:

[0083] The amorphous silicon region corresponding to the driving transistor is subjected to excimer laser annealing and crystallization, while the amorphous silicon region corresponding to the switching transistor is subjected to excimer laser annealing and crystallization.

[0084] Specifically, the sub-pixel driving circuit also includes a switching transistor. Since the switching transistor does not have high requirements on the crystallization of the active layer, only partial area crystallization can meet the performance requirements. While the driving transistor is crystallized, the size or irradiation position of the excimer laser beam can be adjusted to meet the crystallization of the switching transistor at the same time.

[0085] It should be noted that the driving circuit of each sub-pixel of the display panel according to the embodiment of the present invention may include a driving transistor and a switching transistor. Since the method according to the embodiment of the present invention can reduce the differences between the driving transistors, so that the threshold voltage of each driving transistor is the same or similar, the display panel has better display uniformity. Therefore, the method according to the embodiment of the present invention is applicable to the case where the driving circuit does not include a compensation circuit and only includes a driving transistor, a switching transistor, and a capacitor. Of course, to further improve the display performance of the display panel, the method according to the embodiment of the present invention is also applicable to the case where the driving circuit includes multiple transistors and capacitors.

[0086] Figure 8 This is a flow chart of another method for manufacturing a display panel provided by an embodiment of the present invention, with reference to Figure 8 , the method comprising:

[0087] S110, providing a substrate;

[0088] S120, forming an amorphous silicon layer on the substrate;

[0089] S130 , performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner.

[0090] S140 , patterning the crystallized amorphous silicon layer to form polysilicon pattern regions corresponding to the plurality of driving transistors.

[0091] S150 , processing the polysilicon pattern area to form a source region, a drain region, and a channel region.

[0092] S160 , forming other film layers of the driving transistor.

[0093] S170, forming a light-emitting functional layer.

[0094] The driving transistor further includes a gate, a source, and a drain. When the driving transistor is a bottom-gate type, the gate can be fabricated before forming the source, drain, and channel regions. After forming the source, drain, and channel regions, the source and drain electrodes can be formed. When the driving transistor is a top-gate type, the gate, source, and drain electrodes are formed in sequence after forming the source, drain, and channel regions. The light-emitting functional layer can include layers such as an anode, a cathode, and an organic light-emitting layer.

[0095] It should be noted that Figure 8 The example of first crystallizing the amorphous silicon layer, then patterning the crystallized amorphous silicon layer, and then forming the source, drain, and channel regions is shown for illustrative purposes only and does not limit the present invention. In other embodiments, the amorphous silicon layer may be patterned first, then crystallized, and the source, drain, and channel regions may be formed after crystallization.

[0096] An embodiment of the present invention further provides a display panel, which is manufactured using the method for manufacturing a display panel described in any embodiment of the present invention.

[0097] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present invention can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved. This is not limited herein.

[0098] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A method for manufacturing a display panel, characterized in that: include: providing a substrate; forming an amorphous silicon layer on the substrate; Performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner; The excimer laser annealing and crystallization is performed on the amorphous silicon region corresponding to each driving transistor in the same manner, comprising: The amorphous silicon region corresponding to each of the driving transistors is subjected to n excimer laser annealing crystallizations, and the n excimer laser irradiation positions of the n excimer laser annealing crystallizations of the amorphous silicon region corresponding to each of the driving transistors are respectively the same as the n excimer laser irradiation positions of the n excimer laser annealing crystallizations of the amorphous silicon regions corresponding to other driving transistors, and the total coverage range of the n excimer laser irradiation positions of the same driving transistor covers the amorphous silicon region corresponding to the driving transistor, wherein n is a positive integer greater than or equal to 2.

2. The method according to claim 1, characterized in that The excimer laser irradiation positions of at least two of the n excimer laser annealing crystallizations of the amorphous silicon region corresponding to the same driving transistor are different, or the n excimer laser irradiation positions of the n excimer laser annealing crystallizations of the amorphous silicon region corresponding to the same driving transistor are all the same.

3. The method according to claim 1, characterized in that The excimer laser annealing and crystallization is performed on the amorphous silicon region corresponding to each driving transistor in the same manner, comprising: The amorphous silicon region corresponding to each driving transistor is subjected to excimer laser annealing crystallization at the same excimer laser irradiation position, and the center of the amorphous silicon region corresponding to each driving transistor is located on a symmetric line of the excimer laser irradiation spot.

4. The method according to claim 1, wherein The excimer laser annealing and crystallization is performed on the amorphous silicon region corresponding to each driving transistor in the same manner, comprising: The amorphous silicon regions corresponding to the driving transistors in the same row or the same column are simultaneously subjected to excimer laser annealing and crystallization using the same excimer laser beam.

5. The method according to any one of claims 1 to 4, characterized in that Before performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, the method further includes: Patterning the amorphous silicon layer to form amorphous silicon pattern regions corresponding to the plurality of driving transistors; The performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner comprises: Each of the amorphous silicon pattern regions is subjected to excimer laser annealing and crystallization in the same manner to form polysilicon pattern regions corresponding to the plurality of driving transistors.

6. The method according to any one of claims 1 to 4, characterized in that After performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, the method further includes: The crystallized amorphous silicon layer is patterned to form polysilicon pattern regions corresponding to the plurality of driving transistors.

7. The method according to claim 1, characterized in that Also includes: While the amorphous silicon region corresponding to the driving transistor is subjected to excimer laser annealing and crystallization, the amorphous silicon region corresponding to the switching transistor is subjected to excimer laser annealing and crystallization.

8. The method according to claim 6, characterized in that After forming the polysilicon pattern areas corresponding to the plurality of driving transistors respectively, the method further comprises: Processing the polysilicon pattern to form a source region, a drain region and a channel region; forming other film layers of the driving transistor; A light-emitting functional layer is formed.

9. A display panel, characterized in that: The display panel is manufactured using the manufacturing method of any one of claims 1 to 8.

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