Substrate processing system and substrate processing method

Abstract

The present application relates to a substrate processing system and a substrate processing method. The substrate processing system includes: a first substrate holding unit including a first base facing a substrate from a lower side with a cleaning target surface opposite a protection target surface of the substrate, and holding the substrate in a first posture with the protection target surface facing upward; a protection film coating nozzle coating a protection film on at least a peripheral portion of the protection target surface of the substrate held by the first substrate holding unit; a first turning unit contacting the peripheral portion of the substrate and turning the substrate so that the posture of the substrate changes from the first posture to a second posture with the protection target surface facing downward; a second substrate holding unit including a second base facing the substrate from a lower side, and holding the substrate in the second posture; and a cleaning unit cleaning the cleaning target surface of the substrate held by the second substrate holding unit.

Description

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS]

[0002] This application corresponds to Japanese Patent Application No. 2020-219355, filed December 28, 2020, to the Japan Patent Office, the entire disclosure of which is incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to a substrate processing system and a substrate processing method for processing a substrate. The substrate as a processing target includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, an organic EL (Electroluminescence) display device, and the like, a substrate for a flat panel display (FPD), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a reticle, a ceramic substrate, a substrate for a solar cell, and the like. BACKGROUND

[0004] Japanese Patent Publication No. 2018-56466 discloses a substrate processing apparatus that cleans a non-device surface of a substrate after processing a device surface of the substrate with IPA (isopropyl alcohol). SUMMARY

[0005] In Japanese Patent Publication No. 2018-56466, the non-device surface is cleaned in a state in which the non-device surface faces downward. Since a component such as a rotary pedestal is disposed on the lower side of the non-device surface, the member that cleans the non-device surface is limited in space.

[0006] To alleviate the limitation in space, it can be considered to clean the non-device surface in a state in which the non-device surface faces upward. To this end, it is necessary to turn over the substrate before the substrate is carried into the substrate processing apparatus. However, in this case, the following problem occurs: a component for turning over the substrate contacts the device surface, and the device surface is contaminated.

[0007] To address this, one of the objects of the present application is to provide a substrate processing system and a substrate processing method that can both inhibit contamination of a protected surface of a substrate and clean a cleaned surface of the substrate well.

[0008] An aspect of the present application provides a substrate processing system including: a first substrate holding unit including a first base facing a substrate from a lower side with respect to a cleaning target surface opposite to a protection target surface of the substrate, and holding the substrate in a first posture in which the protection target surface faces an upper side; a protection film coating nozzle coating a protection film at least on a peripheral portion of the protection target surface of the substrate held by the first substrate holding unit; a first turning unit turning the substrate in contact with the peripheral portion of the substrate so that the posture of the substrate changes from the first posture to a second posture in which the protection target surface faces a lower side; a second substrate holding unit including a second base facing the substrate from the lower side, and holding the substrate in the second posture; and a cleaning unit cleaning the cleaning target surface of the substrate held by the second substrate holding unit from the upper side.

[0009] According to this configuration, when the substrate is turned, the peripheral portion of the substrate comes into contact with the first turning unit. Therefore, by turning the substrate in a state where the protection film is coated on at least the peripheral portion of the protection target surface, contamination caused by contact with the first turning unit can be suppressed, and the posture of the substrate can be changed to the second posture. Thereafter, the cleaning target surface of the substrate can be cleaned from the upper side by the cleaning unit in a state where the posture of the substrate is the second posture. Therefore, the cleaning target surface can be cleaned well without being limited in space by the second base.

[0010] As described above, the contamination of the protection target surface of the substrate can be suppressed, and the cleaning target surface of the substrate can be cleaned well. In addition, the contamination refers to, for example, attachment of contaminant such as a particle.

[0011] In an aspect of the present application, the first substrate holding unit includes a first adsorption holding unit adsorbing a central portion of the cleaning target surface to the first base, and holding the substrate. Therefore, the first substrate holding unit can hold the substrate without providing a member in contact with the peripheral portion of the substrate. That is, the protection film can be coated without providing a member that interferes with the coating of the protection film in the vicinity of the peripheral portion of the protection target surface of the substrate. Therefore, it is possible to improve the uniformity of the protection film with respect to the peripheral portion of the protection target surface. Therefore, the contamination of the protection target surface of the substrate can be further suppressed.

[0012] In an aspect of the present application, the second substrate holding unit includes a plurality of chuck pins supported on the second base, and holding the substrate in contact with the peripheral portion of the protection target surface of the substrate.

[0013] When the object surface to be cleaned is cleaned, the second base must be adsorbed to the central portion of the object surface to be protected of the substrate, or the peripheral portion of the substrate must be held by the plurality of chuck pins supported on the second base. That is, the cleaning of the object surface to be cleaned is performed in a state where the components constituting the second substrate holding unit are in contact with at least a portion of the object surface to be protected of the substrate.

[0014] According to the substrate processing system, since the protective film is applied to at least the peripheral portion of the object surface to be protected of the substrate, the peripheral portion of the substrate can be held by the plurality of chuck pins without the plurality of chuck pins being in direct contact with the peripheral portion of the object surface to be protected of the substrate. Therefore, contamination of the object surface to be protected due to holding of the substrate during cleaning can be more reliably suppressed.

[0015] In one aspect of the present application, the protective film application unit is configured to apply the protective film to the entire object surface to be protected of the substrate. Also, the second substrate holding unit includes a second adsorption holding unit that holds the substrate by adsorbing the central portion of the object surface to be protected to the second base.

[0016] According to this configuration, the protective film is applied to the entire object surface to be protected of the substrate. Therefore, the central portion of the protective film can be held by adsorbing the central portion of the protective film to the second base without the second base being in direct contact with the central portion of the object surface to be protected of the substrate. Therefore, contamination of the object surface to be protected due to holding of the substrate during cleaning can be suppressed.

[0017] In one aspect of the present application, the cleaning unit includes a spray nozzle that performs spray cleaning of the object surface to be cleaned by spraying droplets of cleaning liquid toward the object surface to be cleaned.

[0018] According to this configuration, spray cleaning is performed by spraying droplets of cleaning liquid from the spray nozzle toward the object surface to be cleaned. Therefore, the object surface to be cleaned can be effectively cleaned by the physical force generated by the impact of the droplets of cleaning liquid.

[0019] In one aspect of the present application, the cleaning unit includes a cleaning member that is brought into contact with the object surface to be cleaned of the substrate to scrub clean the object surface to be cleaned.

[0020] According to this configuration, scrub cleaning is performed by bringing the cleaning member into contact with the object surface to be cleaned. Therefore, contaminant substances splashed from the object surface to be cleaned due to scrub cleaning can be suspended in the gaseous atmosphere. If the object surface to be protected is protected by applying the protective film thereto, the contaminant substances can be suppressed from adhering to the object surface to be protected.

[0021] In one embodiment of the present application, the substrate processing system further includes a second turning unit that contacts the peripheral portion of the substrate and turns the substrate so that the posture of the substrate changes from the second posture to the first posture; a third substrate holding unit that includes a third base facing the substrate from the lower side and holds the substrate in the first posture; and a removal liquid nozzle that supplies a removal liquid for removing the protective film from the protective object surface of the substrate held by the third substrate holding unit to the protective object surface of the substrate.

[0022] According to this configuration, the removal liquid can be supplied from the upper side toward the protective object surface of the substrate. Therefore, compared with a configuration in which the removal liquid is supplied toward the protective object surface of the lower side, the removal liquid is easily diffused uniformly to the entire protective object surface. Therefore, the protective film can be removed from the protective object surface favorably.

[0023] In one embodiment of the present application, the first substrate holding unit functions as the third substrate holding unit. Therefore, the coating and removal of the protective film are performed in a state where the same substrate holding unit (first substrate holding unit) holds the substrate. Therefore, compared with a case where another substrate holding unit is provided for removing the protective film, the substrate processing system can be downsized.

[0024] In one embodiment of the present application, the substrate processing system further includes a second turning unit that contacts the peripheral portion of the substrate and turns the substrate so that the posture of the substrate changes from the second posture to the first posture; a third substrate holding unit that includes a third base facing the substrate from the lower side and holds the substrate in the first posture; and a dry removal unit that removes the protective film from the protective object surface of the substrate held by the third substrate holding unit by performing plasma processing or light irradiation processing on the protective object surface of the substrate.

[0025] According to this configuration, by performing the plasma processing or the ultraviolet irradiation processing, the protective film can be removed from the protective object surface without supplying a liquid to the substrate. Therefore, the work of drying the substrate can be omitted, and the occurrence of a watermark (drying mark) when the protective object surface is dried can be suppressed.

[0026] In one embodiment of the present application, the substrate processing system further includes a gas supply unit that supplies a gas to a space between the protective object surface of the substrate held by the second substrate holding unit and the second base. According to this configuration, since the gas is supplied to the space between the second base and the protective object surface, a gas flow from the space to the outside of the space is formed. Therefore, the inflow of a contaminant that splashes in the gas atmosphere into the space between the second base and the protective object surface and adheres to the protective object surface can be suppressed in the cleaning of the cleaning object surface. Therefore, the protective object surface of the substrate can be protected favorably.

[0027] In one aspect of the present application, the substrate processing system further includes a container placement member that places a container that houses the substrate in the first posture, and a transfer unit that has a robot that contacts a peripheral portion of a surface of the substrate that faces downward among the protection target surface and the cleaning target surface, and transfers the substrate between the container placement member, the first substrate holding unit, the first turning unit, and the second substrate holding unit.

[0028] According to this configuration, the substrate can be transferred from the container placed on the container placement member to the first substrate holding unit by the transfer unit. The substrate is housed in the container in the first posture. Therefore, the substrate taken out from the container can be held on the first substrate holding unit in the first posture without being turned over.

[0029] In addition, the substrate can be transferred from the first substrate holding unit to the first turning unit by the transfer unit. As long as the substrate transferred to the first turning unit is turned over by the first turning unit after the protection film is applied to the protection target surface, the protection target surface of the substrate can be prevented from being contaminated by the contact between the first turning unit and the peripheral portion of the substrate, and the posture of the substrate can be changed to the second posture. Thereafter, as long as the substrate is transferred from the first turning unit to the second substrate holding unit by the transfer unit, the substrate can be held on the second substrate holding unit in the second posture, and the cleaning target surface can be cleaned.

[0030] Another aspect of the present application provides a substrate processing method including: a first substrate holding process of holding a substrate having a protection target surface and a cleaning target surface on an opposite side of the protection target surface in a first posture in which the protection target surface faces upward in a first holding position that faces a first base from an upper side; a protection film application process of applying a protection film to at least a peripheral portion of the protection target surface of the substrate held in the first posture in the first holding position by the first substrate holding process; a first turning process of contacting a peripheral portion of the substrate with a first turning unit after the protection film application process and turning the substrate so that the posture of the substrate changes from the first posture to a second posture in which the protection target surface faces downward; a second substrate holding process of holding the substrate whose posture is changed to the second posture by the first turning process in a second holding position that faces a second base from the upper side; and a cleaning process of performing cleaning of the cleaning target surface of the substrate held in the second holding position in the second posture by the second substrate holding process.

[0031] According to this method, the same effects as the substrate processing system are exerted.

[0032] In another aspect of the present application, the substrate processing method includes: a second turning step of holding a peripheral portion of the substrate with a second turning unit and turning the substrate after the cleaning step, so that the posture of the substrate changes from the second posture to the first posture; a third substrate holding step of holding the substrate whose posture is the first posture by the second turning step in a third holding position facing a third base from an upper side; and a protective film removing step of supplying a removing liquid to the substrate held in the first posture in the third holding position by the third substrate holding step, thereby removing the protective film.

[0033] In another aspect of the present application, the substrate processing method includes: a second turning step of contacting a second turning unit with a peripheral portion of the substrate and turning the substrate after the cleaning step, so that the posture of the substrate changes from the second posture to the first posture; a third substrate holding step of holding the substrate in the first posture in a third holding position facing a third base from an upper side; and a protective film removing step of performing plasma processing or light irradiation processing on the substrate held in the first posture in the third holding position by the third substrate holding step, thereby removing the protective film from the protective object surface.

[0034] The objects and further objects, features and effects of the present application will become apparent from the following description of the embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1A FIG. 1 is a plan view illustrating a configuration of a substrate processing apparatus included in a substrate processing system according to a first embodiment of the present application.

[0036] Figure 1B FIG. 2 is a diagrammatic front view illustrating a configuration of the substrate processing apparatus.

[0037] Figure 2 FIG. 3 is a schematic view illustrating a configuration of a carrier placed at a load port included in the substrate processing apparatus.

[0038] Figure 3 FIG. 4 is a schematic cross-sectional view illustrating a configuration example of a film coating and removing apparatus included in the substrate processing apparatus.

[0039] Figure 4 FIG. 5 is a schematic cross-sectional view illustrating a configuration example of a physical cleaning apparatus included in the substrate processing apparatus.

[0040] Figure 5A FIG. 6 is a schematic cross-sectional view illustrating a configuration example of a turning unit included in the substrate processing apparatus.

[0041] Figure 5B It is along Figure 5A The VB-VB line cross-section shown.

[0042] Figure 5C It is along Figure 5A The cross-sectional view of the VC-VC line shown.

[0043] Figure 5D It is used to explain the substrate from Figure 5C The cross-sectional view of the state after the state is flipped.

[0044] Figure 6 This is a block diagram illustrating a control-related configuration example of the substrate processing system.

[0045] Figure 7 It is a flowchart used to illustrate the specific substrate processing flow of the substrate processing system.

[0046] Figures 8A-8H This is a schematic diagram illustrating the condition of the substrate when performing one example of the substrate treatment.

[0047] Figures 9A-9C This is a schematic diagram used to illustrate the removal of the protective film from the protected surface of the substrate.

[0048] Figure 10 This is a schematic diagram illustrating a variation of the substrate processing in the first embodiment.

[0049] Figure 11 This is a schematic cross-sectional view illustrating a configuration example of a physical cleaning apparatus used to explain a variation of the first embodiment.

[0050] Figure 12 This is a schematic cross-sectional view of the physical cleaning apparatus included in the substrate processing system of the second embodiment of the present invention.

[0051] Figure 13A This is a top view of the configuration of the substrate processing system according to the third embodiment of the present invention.

[0052] Figure 13B This is a schematic front view used to illustrate the configuration of the substrate processing apparatus of the third embodiment.

[0053] Figure 14 This is a schematic cross-sectional view of the film coating apparatus of the substrate processing apparatus included in the substrate processing system of the third embodiment.

[0054] Figure 15 This is a schematic cross-sectional view used to illustrate an example of the configuration of the film removal apparatus included in the substrate processing apparatus of the third embodiment.

[0055] Figure 16is a flowchart for explaining a flow of a specific substrate processing of the substrate processing system of the 3rd embodiment.

[0056] Figure 17 is a schematic cross-sectional view for explaining a variation of the film removing apparatus provided to the substrate processing apparatus of the 3rd embodiment. DETAILED DESCRIPTION

[0057] <1st Embodiment>

[0058] Figure 1A is a plan view for explaining a configuration of the substrate processing apparatus 2 provided to the substrate processing system 1 of the 1st embodiment of the present application. Figure 1B is a diagrammatic front view for explaining a configuration of the substrate processing apparatus 2.

[0059] The substrate processing system 1 is a system for processing a substrate W such as a silicon wafer. The substrate processing system 1 includes a single-wafer substrate processing apparatus (single-wafer processing apparatus) 2 for processing substrates W one by one, and a control apparatus (controller) 3 for controlling the substrate processing apparatus 2.

[0060] The substrate processing apparatus 2 includes a plurality of liquid processing apparatuses 4 for processing substrates W with liquid, a plurality of load ports (container placement members) LP for placing a plurality of carriers (containers) C each of which accommodates a plurality of substrates W to be processed by the liquid processing apparatuses 4, and a plurality of transfer robots (transfer conveyance robots IR and main conveyance robots CR) for transferring substrates W between the load ports LP and the liquid processing apparatuses 4.

[0061] In this embodiment, the substrate W is a circular plate-shaped substrate. The diameter of the substrate W is, for example, 300 mm. The substrate W has a protection target surface Wl and a cleaning target surface W2 on the opposite side of the protection target surface Wl. The protection target surface Wl is a surface to be protected, and the cleaning target surface W2 is a surface to be physically cleaned. The protection target surface Wl is either one of a device surface on which a fine circuit pattern is formed and a non-device surface on which no circuit pattern is formed. The cleaning target surface W2 is also either one of the device surface and the non-device surface. The circuit pattern can be, for example, a linear pattern formed by a fine groove, or can be formed by providing a plurality of fine holes (pores or micro-holes). Typically, the protection target surface Wl is the device surface, and the cleaning target surface W2 is the non-device surface.

[0062] As Figure 2As shown, each carrier C includes a housing portion C1 that houses a plurality of substrates W, and a plurality of support portions C2 that contact the peripheral edge portions of the substrates W from the lower side and support the substrates W piece by piece. Therefore, in order not to contaminate the protection target surface W1 by contact with the support portions C2, the substrates W are housed in the carriers C in a first attitude in which the protection target surface W1 faces upward, and the peripheral edge portions of the cleaning target surfaces W2 of the substrates W are in contact with the support portions C2.

[0063] The peripheral edge portion of the cleaning target surface W2 refers to a region between the peripheral end of the substrate W and a position on the cleaning target surface W2 that is offset inward from the peripheral end of the substrate W by a certain distance. Similarly, the peripheral edge portion of the protection target surface W1 refers to a region between the peripheral end of the substrate W and a position on the protection target surface W1 that is offset inward from the peripheral end of the substrate W by a certain distance.

[0064] Referring to Figure 1A and Figure 1B , the plurality of transfer robots includes a transfer-in / out robot IR that performs transfer-in and transfer-out of the substrates W with respect to the carriers C on the load port LP, and a main transfer robot CR that performs transfer-in and transfer-out of the substrates W with respect to the plurality of liquid processing devices 4, and performs handover of the substrates W between the transfer-in / out robot IR and the main transfer robot CR.

[0065] The substrate processing device 2 further includes a turnover unit 5 that receives the substrates W from the transfer-in / out robot IR and the main transfer robot CR, holds the peripheral edge portions of the substrates W, and turns over the substrates W. As a result of the substrates W being turned over by the turnover unit 5, the attitude of the substrates W changes to either one of the first attitude and a second attitude in which the protection target surface W1 faces downward.

[0066] The transfer-in / out robot IR and the main transfer robot CR are disposed on a transfer path TR that extends from the load port LP to the plurality of liquid processing devices 4. The turnover unit 5 is located between the transfer-in / out robot IR and the main transfer robot CR on the transfer path TR.

[0067] Each of the transfer robots is a multi-joint arm robot that includes a pair of multi-joint arms AR and a pair of hands H that are respectively provided at the front ends of the pair of multi-joint arms AR in a vertically spaced-apart manner. The hands H provided by each of the transfer robots are configured to contact and hold the substrates W at the peripheral edge portions of the surfaces that face downward among the cleaning target surfaces W2 and the protection target surface W1 (see Figure 8D and Figure 8F ).

[0068] The plurality of liquid processing devices 4 forms four processing towers that are respectively disposed at four horizontally separated locations. Each of the processing towers includes a plurality of (three in the example shown in Figure 1B ) liquid processing devices 4 that are stacked in the vertical direction. Two of the four processing towers are disposed on each side of the transfer path TR.

[0069] The plurality of liquid processing apparatuses 4 include a plurality of film coating and removing apparatuses 4A that coat a protective film on the protection target surface Wl of the substrate W or remove the protective film from the protection target surface Wl, and a plurality of physical cleaning apparatuses 4B that perform physical cleaning on the cleaning target surface W2 of the substrate W. The so-called physical cleaning is cleaning of the substrate W by applying a physical force to the substrate W. The so-called physical force is an impact (kinetic energy) imparted to the substrate W by a cleaning liquid or a cleaning member.

[0070] In this embodiment, the two processing towers on the IR side of the transfer robot IR include the plurality of film coating and removing apparatuses 4A, and the two processing towers on the opposite side of the transfer robot IR include the plurality of physical cleaning apparatuses 4B.

[0071] Each film coating and removing apparatus 4A includes a first rotary chuck 6A that holds the substrate W horizontally while rotating the substrate W about a vertical rotation axis Al (vertical axis) that passes through the center of the substrate W, a first processing cup 7A that surrounds the first rotary chuck 6A and receives liquid splashed from the substrate W, and a first chamber 8A that accommodates the first rotary chuck 6A and the first processing cup 7A.

[0072] Each physical cleaning apparatus 4B includes a second rotary chuck 6B that holds the substrate W horizontally while rotating the substrate W about a vertical rotation axis A2 (vertical axis) that passes through the center of the substrate W, a second processing cup 7B that surrounds the second rotary chuck 6B and receives liquid splashed from the substrate W, and a second chamber 8B that accommodates the second rotary chuck 6B and the second processing cup 7B.

[0073] In the first chamber 8A, an entrance (not shown) for the main carrier robot CR to carry in or out the substrate W is formed. The first chamber 8A is provided with a shutter unit (not shown) that opens or closes the entrance. The second chamber 8B also has an entrance (not shown) and a shutter unit (not shown) like the first chamber 8A. The plurality of carrier robots constitute a carrying unit that carries the substrate W between the plurality of carriers C (the plurality of load ports LP), the turnover unit 5, the first rotary chuck 6A, and the second rotary chuck 6B.

[0074] Figure 3 is a schematic cross-sectional view for illustrating a configuration example of the film coating and removing apparatus 4A. Figure 3 In the figure, the illustration of the first chamber 8A is omitted.

[0075] The first rotary chuck 6A is an example of a first substrate holding unit that holds the substrate W in a first posture. The first rotary chuck 6A is also an example of a first substrate holding and rotating unit that holds the substrate W in the first posture while rotating the substrate W about the rotation axis Al.

[0076] The first rotary chuck 6A includes: a first rotary base 21 (first base) that faces the substrate W from the lower side and that adsorbs and holds the central portion of the cleaning target surface W2 of the substrate W; a first rotary shaft 22 that extends in the vertical direction along the rotary axis Al and that is coupled to the first rotary base 21; a first rotary motor 23 that rotates the first rotary shaft 22 about the rotary axis Al; and a first motor housing 24 that houses the first rotary shaft 22 and the first rotary motor 23. The central portion of the cleaning target surface W2 is a region that includes the center of the cleaning target surface W2 and the peripheral region of the center, and is a region on the central side from the peripheral edge portion of the cleaning target surface W2.

[0077] The first rotary base 21 has an adsorption surface 21a that adsorbs the substrate W at the cleaning target surface W2. The adsorption surface 21a is, for example, the upper surface of the first rotary base 21, and is a circular surface with the center passing through the rotary axis Al. The diameter of the adsorption surface 21a is smaller than the diameter of the substrate W. The upper end portion of the first rotary shaft 22 protrudes from the first motor housing 24 and is coupled to the first rotary base 21.

[0078] A suction path 25 is inserted in the first rotary base 21 and the first rotary shaft 22. The suction path 25 has a suction port 25a that is exposed from the center of the adsorption surface 21a of the first rotary base 21. The suction path 25 is connected to a suction pipe 26. The suction pipe 26 is connected to a suction device 27 such as a vacuum pump.

[0079] The suction pipe 26 has a suction valve 28 that opens and closes the path. By opening the suction valve 28, the substrate W disposed on the adsorption surface 21a of the first rotary base 21 is sucked by the suction port 25a of the suction path 25. Thus, the substrate W is adsorbed from the lower side to the adsorption surface 21a and is horizontally held at a predetermined holding position (position of the substrate W, first holding position). Figure 3 The first rotary chuck 6A is an example of a first adsorption and holding unit that adsorbs the substrate W to the first rotary base 21 and horizontally holds the substrate W.

[0080] The first rotary base 21 is rotated by rotating the first rotary shaft 22 with the first rotary motor 23. Thus, the substrate W is rotated about the rotary axis Al together with the first rotary base 21.

[0081] The first rotary chuck 6A can also have a centering unit 29 that horizontally moves the substrate W so that the center of the protection target surface Wl of the substrate W approaches the rotary axis Al.

[0082] At a position on the upper side from the first rotary base 21, a blocking plate 30 is provided that blocks the gas atmosphere in the space between the protection target surface Wl of the substrate W held by the first rotary chuck 6A and the gas atmosphere outside the space.

[0083] The blocking plate 30 has an opposing surface 30a that opposes the protection target surface Wl of the substrate W held by the first rotary chuck 6A from the upper side. The blocking plate 30 is formed in a circular plate shape having substantially the same diameter as the substrate W or a larger diameter than the substrate W. On the side of the blocking plate 30 opposite the opposing surface 30a, a support shaft 31 is fixed.

[0084] The blocking plate 30 is connected to a blocking plate lifting unit 32 that lifts the blocking plate 30. The blocking plate lifting unit 32 includes, for example, an actuator (not shown) such as a motor or a cylinder that lifts the support shaft 31. The blocking plate 30 can also be rotatable about the rotation axis Al.

[0085] The first processing cup 7A includes a plurality of baffle plates 33 that catch liquid splashed from the substrate W held by the adsorption surface 21a of the first rotary base 21, a plurality of receiving cups 34 that receive liquid guided downward by the plurality of baffle plates 33, and an exhaust barrel 35 that surrounds all of the baffle plates 33 and the receiving cups 34 in plan view.

[0086] Figure 3 An example in which three baffle plates 33 and three receiving cups 34 are provided is shown. Each baffle plate 33 corresponds to each receiving cup 34, and each receiving cup 34 receives liquid guided downward by the corresponding baffle plate 33.

[0087] The plurality of baffle plates 33 are connected to a first baffle plate lifting unit 36 that lifts the plurality of baffle plates 33 individually. The first baffle plate lifting unit 36 individually lifts the plurality of baffle plates 33 between a lower position and an upper position. The first baffle plate lifting unit 36 includes a plurality of actuators (not shown) that individually lift the plurality of baffle plates 33. The actuators can be motors or cylinders.

[0088] The film coating removal device 4A also includes a plurality of nozzles that supply fluid from the upper side toward the protection target surface Wl of the substrate W located in the first holding position. The plurality of nozzles include a moving nozzle 9 that moves in the horizontal direction and the vertical direction, a fixed nozzle 10 whose horizontal position and vertical position are fixed, and a central nozzle 11 that moves up and down together with the blocking plate 30 at a position that opposes the central portion of the protection target surface Wl of the substrate W located in the first holding position. The central portion of the protection target surface Wl is a region that includes the center of the protection target surface Wl and a peripheral region of the center, and is a region that is closer to the center than the peripheral portion of the protection target surface Wl.

[0089] The moving nozzle 9 is connected to a plurality of nozzle moving units 37 that move the moving nozzle 9 in the horizontal direction and the vertical direction. The moving nozzle 9 is movable in the horizontal direction between a central position and an initial position (a retracted position). The moving nozzle 9 is opposed to the central portion of the object surface Wl of the substrate W when the moving nozzle 9 is positioned at the central position. The moving nozzle 9 is not opposed to the object surface Wl of the substrate W when the moving nozzle 9 is positioned at the initial position, and is positioned outside the first processing cup 7A in plan view. The nozzle moving units 37 include actuators (not shown) such as electric motors or cylinders. The moving nozzle 9 can be a rotary nozzle or a linear nozzle.

[0090] The moving nozzle 9 has a nozzle outlet 9a at the front end. The nozzle outlet 9a is provided at a position higher than the first holding position. The nozzle outlet 9a is opposed to the object surface Wl of the substrate W from above when the moving nozzle 9 is opposed to the substrate W from above. The moving nozzle 9 is configured to supply (eject) the protective film forming liquid and the removing liquid toward the object surface Wl of the substrate W positioned at the first holding position.

[0091] The moving nozzle 9 is an example of a protective film forming liquid nozzle that supplies the protective film forming liquid toward the object surface Wl of the substrate W, and is also an example of a removing liquid nozzle that supplies the removing liquid such as ammonia toward the object surface Wl of the substrate W. The nozzle outlet 9a is an example of a protective film forming liquid nozzle outlet that ejects the protective film forming liquid, and is also an example of a removing liquid nozzle outlet that ejects the removing liquid.

[0092] The protective film forming liquid is a liquid that forms a protective film that protects the object surface Wl of the substrate W. The protective film forming liquid contains a solute and a solvent. The protective film forming liquid forms a protective film by volatilization (evaporation) of at least a portion of the solvent contained in the protective film forming liquid. The protective film is a semi-solid or solid film that retains a removing object such as a particle present on the substrate W and has a fixed shape. The protective film can also be a gel.

[0093] The timing at which the protective film is formed is not specified, and it can be understood that the protective film is formed when the viscosity of the protective film forming liquid rises to a degree at which a fixed shape can be maintained by evaporation of the solvent. When the protective film forming liquid is supplied to the rotating substrate W, the solvent starts to evaporate at the instant at which the liquid contacts the substrate W, and the protective film is formed. Therefore, the supply of the protective film forming liquid to the substrate W is also referred to as coating of the protective film. Therefore, the moving nozzle 9 is also an example of a protective film coating nozzle.

[0094] The protective film can also be formed by solidification or hardening of the protective film forming liquid. Here, the "solidification" means, for example, solidification of the solute due to forces acting between molecules or atoms or the like as the solvent volatilizes. The "hardening" means, for example, solidification of the solute due to chemical changes such as polymerization or cross-linking. Therefore, the "solidification or hardening" indicates "solidification" of the solute due to various factors.

[0095] In the protective film forming liquid, as a solute, a low solubility component and a high solubility component having a higher solubility in the removing liquid than the low solubility component are contained. As the low solubility component and the high solubility component, substances having mutually different solubilities in the removing liquid can be used. The low solubility component is, for example, phenol aldehyde. The high solubility component is, for example, 2,2-bis(4-hydroxyphenyl)propane.

[0096] The solvent contained in the protective film forming liquid can be any liquid that can dissolve the low solubility component and the high solubility component. The solvent contained in the protective film forming liquid is preferably a liquid that is compatible with the removing liquid. The compatibility means the property of the two liquids mixed with each other after being dissolved.

[0097] The protective film forming liquid can contain a preservative component. The preservative component is, for example, BTA (benzotriazole), which will be described in detail later.

[0098] The protective film is mainly composed of the low solubility component in a solid state (low solubility solid) and the high solubility component in a solid state (high solubility solid). The protective film can contain the solvent. Details of each component (the solvent, the low solubility component, the high solubility component, and the preservative component) contained in the protective film forming liquid will be described later.

[0099] The removing liquid is a liquid used to remove the protective film by peeling it from the main surface of the substrate W. The removing liquid can be an aqueous alkali solution (alkaline liquid) other than ammonia water. As specific examples of the aqueous alkali solution other than ammonia water, aqueous TMAH (tetramethylammonium hydroxide) and aqueous choline, and any combination thereof can be given. The removing liquid can be pure water (preferably, DIW (Deionized Water)), or a neutral or acidic aqueous solution (non-alkaline aqueous solution).

[0100] The moving nozzle 9 is connected to a common pipe 40 that guides the protective film forming liquid and the removing liquid to the moving nozzle 9. The common pipe 40 is connected to a protective film forming liquid pipe 41 that guides the protective film forming liquid to the common pipe 40, and a removing liquid pipe 42 that guides the removing liquid to the common pipe 40.

[0101] When the protective film forming liquid valve 51 interposed in the protective film forming liquid pipe 41 is opened, the protective film forming liquid is continuously sprayed downward from the spray outlet 9a of the moving nozzle 9. When the removing liquid valve 52 interposed in the removing liquid pipe 42 is opened, the removing liquid is continuously sprayed downward from the spray outlet 9a of the moving nozzle 9.

[0102] The fixed nozzle 10 is disposed at a position that is outward of the blocking plate 30 in plan view. The fixed nozzle 10 is connected to a rinse liquid pipe 43 that guides a rinse liquid to the fixed nozzle 10. When a rinse liquid valve 53 that is attached to the rinse liquid pipe 43 is opened, the rinse liquid is sprayed in a continuous flow from the fixed nozzle 10 toward the lower side, and is supplied to the central portion of the object face Wl of the substrate W that is positioned at the first holding position. The fixed nozzle 10 is an example of a rinse liquid nozzle.

[0103] The rinse liquid is not limited to carbonated water. The rinse liquid can also be a liquid that contains at least one of DIW (Deionized Water), carbonated water, electrolytic ion water, hydrochloric acid water of which the concentration is diluted (for example, 1 ppm or more and 100 ppm or less), ammonia water of which the concentration is diluted (for example, 1 ppm or more and 100 ppm or less), and reduced water (hydrogen water).

[0104] The central nozzle 11 is housed in the blocking plate 30 and the support shaft 31. A nozzle outlet 11a that is provided at the front end of the central nozzle 11 is exposed from the communication hole 30b that is formed in the blocking plate 30, and faces the central portion of the object face Wl of the substrate W from the upper side.

[0105] The central nozzle 11 includes a residue removal liquid pipe 39 that supplies an IPA or the like that is a residue removal liquid to the upper surface of the substrate W, and a cylindrical sheath pipe 38 that surrounds the plurality of pipes. The residue removal liquid pipe 39 and the sheath pipe 38 extend in the up-and-down direction along the rotation axis Al. The residue removal liquid is a liquid that is used to dissolve residue of a protective film that remains on the object face Wl of the substrate W after the protective film is peeled from the upper surface of the substrate W using a removal liquid and is removed from the substrate W. The sheath pipe 38 can have inserted therein a rinse liquid pipe and a gas pipe, in addition to the residue removal liquid pipe 39.

[0106] The residue removal liquid pipe 39 is connected to a residue removal liquid pipe 44 that guides a residue removal liquid to the residue removal liquid pipe 39. When a residue removal liquid valve 54 that is attached to the residue removal liquid pipe 44 is opened, the residue removal liquid is sprayed in a continuous flow from the residue removal liquid pipe 39 (central nozzle 11) toward the central portion of the object face Wl of the substrate W. The residue removal liquid pipe 39 can also include the front end portion of the residue removal liquid pipe 44. The central nozzle 11 is an example of a residue removal liquid nozzle.

[0107] The residue removal liquid preferably has compatibility with the rinse liquid and the protective film forming liquid. The residue removal liquid dissolves residue of the protective film. Therefore, the residue removal liquid is also referred to as a residue dissolving liquid. The residue removal liquid is, for example, an organic solvent, and can also be a liquid that contains at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, PGEE (propylene glycol monoethyl ether), and trans-1,2-dichloroethylene.

[0108] Figure 4is a schematic cross-sectional view for illustrating a configuration example of the physical cleaning device 4B. Figure 4 The illustration of the second chamber 8B is omitted in FIG. 2.

[0109] The second rotary chuck 6B is an example of the second substrate holding unit that holds the substrate W in the second attitude. The second rotary chuck 6B is also an example of the second substrate holding and rotating unit that holds the substrate W in the second attitude while rotating the substrate W around the rotation axis A2.

[0110] The second rotary chuck 6B includes a second rotary base 61 (second base) that faces the protection target surface W1 of the substrate W from the lower side and is substantially circular in plan view, a plurality of chuck pins 60 that are supported on the second rotary base 61 and hold the peripheral portion of the substrate W, a second rotary shaft 62 that is configured to extend in the vertical direction along the rotation axis A2 and rotate integrally with the second rotary base 61, a second rotary motor 63 that rotates the second rotary shaft 62 around the rotation axis A2, and a second motor housing 64 that houses the second rotary shaft 62 and the second rotary motor 63.

[0111] The plurality of chuck pins 60 are arranged at intervals in the circumferential direction of the second rotary base 61 on the upper surface of the second rotary base 61. In order to drive the plurality of chuck pins 60 to open and close, an opening and closing unit 69 is provided. The plurality of chuck pins 60 hold the substrate W by being moved to the closed position by the opening and closing unit 69. The plurality of chuck pins 60 release the holding of the substrate W by being moved to the open position by the opening and closing unit 69. The plurality of chuck pins 60 in the open position release the holding of the substrate W while supporting the peripheral portion of the protection target surface W1 of the substrate W from the lower side. The opening and closing unit 69 includes, for example, a link mechanism (not shown) and a drive source (not shown). The drive source includes, for example, an electric motor.

[0112] With regard to the substrate W, the peripheral portion of the substrate W is held by the plurality of chuck pins 60, and the substrate W is horizontally held at a specific holding position (position of the substrate W, second holding position) shown in FIG. 2. Figure 4

[0113] The upper end portion of the second rotary shaft 62 is coupled to the second rotary base 61. The second rotary base 61 is rotated by rotating the second rotary shaft 62 by the second rotary motor 63. Thus, the substrate W is rotated around the rotation axis A2 together with the second rotary base 61.

[0114] The second processing cup 7B includes a plurality of baffle plates 65 that catch liquid splashed from the substrate W held by the second rotary chuck 6B, a plurality of cup holders 66 that catch liquid guided downward by the plurality of baffle plates 65, and an exhaust barrel 67 that surrounds all of the baffle plates 65 and the cup holders 66 in plan view.

[0115] Figure 4 ​Three baffle plates 65 and three cup holders 66 are provided as shown in FIG. 1. Each baffle plate 65 corresponds to each cup holder 66, and each cup holder 66 receives liquid guided downward by the corresponding baffle plate 65.

[0116] The plurality of baffle plates 65 are connected to a second baffle plate lifting unit 68 that lifts the plurality of baffle plates 65 individually. The second baffle plate lifting unit 68 lifts the plurality of baffle plates 65 individually between a lower position and an upper position. The second baffle plate lifting unit 68 includes a plurality of actuators (not shown) that drive the lifting of each of the plurality of baffle plates 65. The actuators can be electric motors or cylinders.

[0117] The physical cleaning device 4B further includes a lower nozzle 12 that supplies fluid to the protection target surface Wl of the substrate W from the lower side, and a brush cleaning unit 70 (cleaning unit) that performs brush cleaning of the cleaning target surface W2 of the substrate W. The brush cleaning is a cleaning method that applies physical force to the substrate W by bringing a cleaning member such as a brush into contact with the substrate W and performing scrubbing.

[0118] The brush cleaning unit 70 includes a cleaning liquid nozzle 71 that supplies a cleaning liquid such as DIW to the cleaning target surface W2 of the substrate W, a cleaning brush 72 (cleaning member) that cleans the cleaning target surface W2 by coming into contact with the cleaning target surface W2 of the substrate W, a swing arm 73 that holds the cleaning brush 72 at a distal end portion, and an arm driving mechanism 74 that swings the swing arm 73.

[0119] The cleaning liquid nozzle 71 is connected to a cleaning liquid pipe 45 that guides the cleaning liquid to the cleaning liquid nozzle 71. The cleaning liquid pipe 45 is equipped with a cleaning liquid valve 55 that opens or closes the flow path inside the cleaning liquid pipe 45. By opening or closing the cleaning liquid valve 55, the ejection and stop of the cleaning liquid from the cleaning liquid nozzle 71 are switched.

[0120] The cleaning liquid ejected from the cleaning liquid nozzle 71 is not limited to DIW. The cleaning liquid ejected from the cleaning liquid nozzle 71 is selected from the rinsing liquid exemplified as the cleaning liquid used in the film coating removal device 4A.

[0121] The cleaning brush 72 is an elastically deformable sponge brush formed of a synthetic resin such as PVA (polyvinyl alcohol). The cleaning brush 72 protrudes downward from a brush holder 75 supported on the swing arm 73. The cleaning brush 72 is not limited to a sponge brush, and can be a brush having a plurality of fibers formed of a resin.

[0122] The arm drive mechanism 74 is configured to swing the swing arm 73 in the horizontal plane or to move the swing arm 73 up and down. With this configuration, when the substrate W is held by the second rotary chuck 6B and rotated, the cleaning brush 72 is pressed against the cleaning target surface W2 of the substrate W, and the position of the press is moved in the radial direction of the substrate W, whereby the entire cleaning target surface W2 of the substrate W can be cleaned by brushing.

[0123] The arm drive mechanism 74 includes, for example, a lift actuator (not shown) that moves the swing arm 73 up and down, and a swing actuator (not shown) that swings the swing arm 73. The lift actuator can be an electric motor or a cylinder. The swing actuator can also be an electric motor or a cylinder.

[0124] The lower nozzle 12 is inserted into the through-hole 61b that is opened in the central portion of the upper surface of the second rotary base 61. The ejection port 12a of the lower nozzle 12 is exposed from the upper surface of the second rotary base 61. The ejection port 12a of the lower nozzle 12 faces the central portion of the protection target surface Wl of the substrate W from the lower side.

[0125] The lower nozzle 12 is configured to eject a gas such as nitrogen (N2). The lower nozzle 12 is connected to the first gas pipe 46 that guides the gas to the lower nozzle 12. The first gas pipe 46 is provided with the first gas valve 56 that opens and closes the flow path thereof.

[0126] The space between the lower nozzle 12 and the through-hole 61b of the second rotary base 61 forms a gas flow path 13 that is circular in plan view. The gas flow path 13 is connected to the second gas pipe 47 that is inserted into the space between the inner circumferential surface of the second rotary shaft 62 and the lower nozzle 12. When the second gas valve 57 provided in the second gas pipe 47 is opened, a gas such as nitrogen is ejected from the gas flow path 13 toward the portion around the center of the protection target surface Wl of the substrate W. The lower nozzle 12 and the gas flow path 13 constitute a gas supply unit that supplies a gas to the space between the protection target surface Wl and the second rotary base 61. The ejection of the gas can be performed from either one of the lower nozzle 12 and the gas flow path 13 alone.

[0127] The gas ejected from the lower nozzle 12 and the gas flow path 13 is not limited to nitrogen. The gas ejected from the gas flow path 13 can also be air. In addition, the gas ejected from the lower nozzle 12 and the gas flow path 13 can also be an inert gas other than nitrogen. The inert gas refers to a gas that is inert to the upper surface of the substrate W, and is not limited to nitrogen. As examples of the inert gas, in addition to nitrogen, noble gases such as argon can also be given.

[0128] Figure 5A FIG. 6 is a schematic cross-sectional view for illustrating a configuration example of the inversion unit 5. Figure 5B FIG. 7 is a view along the line VII-VII in FIG. 6. Figure 5AA cross-sectional view of the VB-VB line shown. Figure 5C is along Figure 5A A cross-sectional view of the VC-VC line shown. Figure 5D is to illustrate the substrate W from Figure 5C A cross-sectional view of the state after the state shown is flipped over.

[0129] Referring to Figure 5A , the flipping unit 5 includes: a housing 80 that houses the substrate W; a support mechanism 81 that contacts a peripheral portion of a lower surface (a surface facing the lower side among the protection target surface W1 and the cleaning target surface W2) of the substrate W and supports the substrate W from the lower side; and a clamping and flipping mechanism 90 that clamps the peripheral portion of the substrate W within the housing 80 and flips it upside down.

[0130] Both the transfer conveyance robot IR and the main conveyance robot CR (refer to Figure 1A ) can enter and exit the inside of the housing 80. The housing 80 is formed with: a first opening 80a for the pair of hands H (refer to Figure 1A ) of the transfer conveyance robot IR to enter and exit the inside of the housing 80; and a second opening 80b for the pair of hands H (refer to Figure 1A ) of the main conveyance robot CR to enter and exit the inside of the housing 80. In this embodiment, the inside of the housing 80 can house two substrates W (refer to Figure 5B ) at the same time.

[0131] Referring to Figure 5A and Figure 5B , the support mechanism 81 includes: a plurality of first support members 82 that contact a peripheral portion of the lower surface of the substrate W and support the substrate W from the lower side; and a plurality of second support members 83 that contact a peripheral portion of the lower surface of the substrate W at positions facing the plurality of first support members 82 from the horizontal direction and support the substrate W from the lower side. The plurality of first support members 82 and the plurality of second support members 83 support the substrate W from the lower side in such a manner that the substrate W is positioned at a specific reference position (an upper reference position).

[0132] As shown in Figure 5B , if the posture of the substrate W is the first posture, the first support members 82 and the second support members 83 contact the peripheral portion of the cleaning target surface W2 of the substrate W. Although not shown, if the posture of the substrate W is the second posture, the first support members 82 and the second support members 83 contact the peripheral portion of the protection target surface W1 of the substrate W.

[0133] The support mechanism 81 further includes a first actuator 84 that moves the plurality of first support members 82 between a support position that supports the substrate W and a retreat position that retreats from the support position to the lower side, and a second actuator 85 that moves the plurality of second support members 83 between a support position that supports the substrate W and a retreat position that retreats from the support position to the lower side. The first actuator 84 moves the plurality of first support members 82 in a direction obliquely upward so as to approach the plurality of second support members 83 in plan view when moving from the retreat position to the support position. The first actuator 84 can also be an electric motor or a cylinder. The second actuator 85 moves the plurality of second support members 83 in a direction obliquely upward so as to approach the plurality of first support members 82 in plan view when moving from the retreat position to the support position. The second actuator 85 can also be an electric motor or a cylinder like the first actuator 84.

[0134] In this embodiment, two substrates W are housed inside the housing case 80 at the same time. Therefore, the support mechanism 81 includes a plurality of first lower side support members 86 that contact the peripheral portion of the lower surface of the substrate W from the lower side to support the substrate W at a position lower than the first support members 82 (first upper side support members), and a plurality of second lower side support members 87 that contact the peripheral portion of the lower surface of the substrate W from the lower side to support the substrate W at a position lower than the plurality of second support members 83 (second upper side support members) and opposite the plurality of first lower side support members 86 in the horizontal direction.

[0135] The first lower side support members 86 and the second lower side support members 87 support the substrate W in such a manner that the substrate W is positioned at a specific reference position (lower side reference position). As shown in Figure 5B If the posture of the substrate W is the first posture, the first lower side support members 86 and the second lower side support members 87 contact the peripheral portion of the cleaning target surface W2 of the substrate W. Although not shown, if the posture of the substrate W is the second posture, the first lower side support members 86 and the second lower side support members 87 contact the peripheral portion of the protection target surface Wl of the substrate W.

[0136] The support mechanism 81 further includes a plurality of first link portions 88 that link the first support members 82 and the first lower side support members 86 corresponding to the first support members 82, and a plurality of second link portions 89 that link the second support members 83 and the second lower side support members 87 corresponding to the second support members 83 (see Figure 5B ). Therefore, the plurality of first lower side support members 86 move together with the plurality of first support members 82 in an oblique direction by the first actuator 84. Further, the plurality of second lower side support members 87 move together with the plurality of second support members 83 in an oblique direction by the second actuator 85.

[0137] Figure 5CIn the embodiment, the illustration of the support mechanism 81 is omitted. Referring to Figure 5A and Figure 5C The chucking and turning mechanism 90 includes a pair of first facing members 91 and a pair of second facing members 92 that face the pair of first facing members 91 from the horizontal direction and that, together with the corresponding first facing members 91, respectively hold the substrate W in the reference position. The chucking and turning mechanism 90 includes a first support shaft 95 that supports the pair of first facing members 91 and that extends in the horizontal direction, a second support shaft 96 that supports the pair of second facing members 92 and that extends coaxially with the first support shaft 95, a first horizontal movement mechanism 93 that moves the first support shaft 95 in a facing direction F in which the first facing members 91 and the second facing members 92 face each other, and a second horizontal movement mechanism 94 that moves the second support shaft 96 in the facing direction F. The first horizontal movement mechanism 93 is, for example, an electric motor or a cylinder. The second horizontal movement mechanism 94 is an electric motor or a cylinder.

[0138] The first facing members 91 contact both the peripheral portion of the protection target surface Wl and the peripheral portion of the cleaning target surface W2 of the substrate W. The second facing members 92 contact both the peripheral portion of the protection target surface Wl and the peripheral portion of the cleaning target surface W2 of the substrate W at positions opposite the first facing members 91 with respect to the center of the substrate W.

[0139] The chucking and turning mechanism 90 includes a first rotation shaft 97 that is inserted through the first support shaft 95 so as to rotate integrally with the first support shaft 95 about a central axis A3 of the first support shaft 95, and a second rotation shaft 98 that is inserted through the second support shaft 96 so as to rotate integrally with the second support shaft 96 about the central axis A3. The first rotation shaft 97 and the first support shaft 95 can rotate integrally, for example, by concave-convex engagement. The second rotation shaft 98 and the second support shaft 96 can rotate integrally, for example, by concave-convex engagement.

[0140] The chucking and turning mechanism 90 further includes a rotation mechanism 99 that rotates the first rotation shaft 97 about the central axis A3, and a pair of shaft coupling members 100 that couple the first rotation shaft 97 and the second rotation shaft 98. The rotation mechanism 99 includes, for example, an electric motor or a cylinder.

[0141] The pair of first facing members 91 are symmetrically arranged about the central axis A3, and the pair of second facing members 92 are symmetrically arranged about the central axis A3. The chucking and turning mechanism 90 further includes a first coupling member 101 that couples the pair of first facing members 91 and the first support shaft 95, and a second coupling member 102 that couples the pair of second facing members 92 and the second support shaft 96.

[0142] Driven by the rotating mechanism 99, the first rotating shaft 97 and the second rotating shaft 98 rotate, and a pair of first opposing components 91 and a pair of second opposing components 92 rotate around the central axis A3.

[0143] The following describes the flipping operation of the substrate W in the flipping unit 5.

[0144] First, utilize the transfer robot IR or the main transport robot CR (see reference). Figure 1A ),like Figure 5B As shown, a substrate W (hereinafter referred to as "substrate WA") is placed on a plurality of first support members 82 and a plurality of second support members 83, and a substrate W (hereinafter referred to as "substrate WB") is placed on a plurality of first lower support members 86 and a plurality of second lower support members 87.

[0145] For simplicity, the following description will only cover the flipping action of substrate WA. The flipping action of substrate WB is the same as the action described below, in which "multiple first support members 82" and "multiple second support members 83" are replaced with "multiple first lower support members 86" and "multiple second lower support members 87".

[0146] With the substrate WA placed on a plurality of first support members 82 and a plurality of second support members 83, the first opposing member 91 and the second opposing member 92 are brought close to each other, thereby clamping the substrate WA by means of the first opposing member 91 and the second opposing member 92.

[0147] With the substrate WA held by the first opposing member 91 and the second opposing member 92, the plurality of first supporting members 82 and the plurality of second supporting members 83 are moved in a downward direction toward a retracted position, causing the plurality of first supporting members 82 and the plurality of second supporting members 83 to retract. As a result, the substrate WA is delivered to the first opposing member 91 and the second opposing member 92.

[0148] With the multiple first support members 82 and multiple second support members 83 retracted, the first opposing member 91 and the second opposing member 92 are rotated, thereby flipping the substrate WA. The orientation of the substrate WA is... Figure 5C The state shown before the flip is the first posture. Figure 5D The flipped state shown is the second pose.

[0149] After the substrate W is flipped, the plurality of first lower side support members 86 and the plurality of second lower side support members 87 are moved toward the support position toward the obliquely upward side, and thus the substrate W is supported from the lower side by the plurality of first lower side support members 86 and the plurality of second lower side support members 87. In a state where the substrate W is supported from the lower side by the plurality of first lower side support members 86 and the plurality of second lower side support members 87, the first opposing member 91 and the second opposing member 92 are moved apart from each other, and thus the substrate W is delivered to the plurality of first lower side support members 86 and the plurality of second lower side support members 87. In this state, the transfer robot IR and the main carrier robot CR (see FIG. 1) can access the substrate W. Figure 1A

[0150] The posture of the substrate W can also be changed from the second posture to the first posture by the same operation. As described above, the flipping unit 5 can grip the peripheral portion of the substrate W by the first opposing member 91 and the second opposing member 92 and flip the substrate W, so that the posture of the substrate W is changed to either one of the first posture and the second posture.

[0151] The flipping unit 5 functions also as a placement unit that temporarily places the substrate W without flipping the substrate W, so as to hand over the substrate W between the transfer robot IR and the main carrier robot CR, because the flipping unit 5 can support the substrate W from the lower side by the support mechanism 81.

[0152] Figure 6 is a block diagram for explaining a configuration example related to control of the substrate processing system 1. The control device 3 is a computer including a computer main body 3a and peripheral devices 3d connected to the computer main body 3a. The computer main body 3a includes a CPU 3b (central processing unit) that executes various commands and a main storage device 3c that stores information. The peripheral devices 3d include an auxiliary storage device 3e that stores programs P and the like, a reading device 3f that reads information from a removable medium RM, and a communication device 3g that communicates with other devices such as a host computer.

[0153] The control device 3 is connected to an input device 3A, a display device 3B, and an alarm device 3C. The input device 3A is operated when an operator such as a user or a maintenance person inputs information to the substrate processing device 2. The information is displayed on a screen of the display device 3B. The input device 3A can be any one of a keyboard, a pointing device, and a touch panel, or can be a device other than these devices. A touch panel display that functions as both the input device 3A and the display device 3B can also be provided in the substrate processing device 2. The alarm device 3C gives an alarm using one or more of light, sound, characters, and graphics. In the case where the input device 3A is a touch panel display, the input device 3A can also function as the alarm device 3C. ​

[0154] The CPU 3b executes a program P stored in the auxiliary storage device 3e. The program P in the auxiliary storage device 3e can be a program pre-installed in the control device 3, a program transmitted to the auxiliary storage device 3e from the removable medium RM by the reading device 3f, or a program transmitted to the auxiliary storage device 3e from an external device such as the host computer HC via the communication device 3g.

[0155] The auxiliary storage device 3e and the removable medium RM are nonvolatile memories that can maintain storage even when not supplied with electric power. The auxiliary storage device 3e is, for example, a magnetic storage device such as a hard disk drive. The removable medium RM is, for example, an optical disk such as a compact disk or a semiconductor memory such as a memory card. The removable medium RM is an example of a computer-readable recording medium on which the program P is recorded. The removable medium RM is a non-transitory tangible recording medium.

[0156] The auxiliary storage device 3e stores a plurality of recipes R. The recipe R is information that specifies contents of processing, conditions of processing, and a sequence of processing of the substrate W. The plurality of recipes R differ from each other in at least one of the contents of processing, the conditions of processing, and the sequence of processing of the substrate W.

[0157] The control device 3 controls the liquid processing device 4, the inversion unit 5, the transfer robot IR, the main carrying robot CR, and the like so as to process the substrate W in accordance with the recipe R set in the main storage device 3c. The following processes are executed by controlling these components by the control device 3. In other words, the control device 3 is programmed to execute the following processes.

[0158] Figure 7 is a flowchart for explaining an example of the substrate processing implemented by the substrate processing system 1. Figure 7 The processes mainly shown in Figures 8A-8H are implemented by the control device 3 executing the program.

[0159] In the substrate processing implemented by the substrate processing system 1, for example, as shown in Figure 7 , a protective film forming liquid supply process (step S1), a protective film forming process (step S2), a first inversion process (step S3), a physical cleaning process (step S4), a second inversion process (step S5), a protective film removing process (step S6), a rinsing process (step S7), a residue removing process (step S8), and a substrate drying process (step S9) are sequentially executed.

[0160] Hereinafter, the substrate processing implemented by the substrate processing system 1 will be described mainly with reference to Figures 1A-4 and Figure 7 . Appropriate reference will also be made to Figures 8A-8H .

[0161] First, the unprocessed substrate W is carried out from the carrier C by the transfer robot IR. The transfer robot IR delivers the substrate W to the main carrier robot CR via the flip unit 5. The main carrier robot CR carries the substrate W received from the transfer robot IR into the film coating removal device 4A and delivers it to the 1st rotary chuck 6A.

[0162] As described above, the substrate W is housed in the carrier C in the 1st attitude (refer to Figure 2 ). Therefore, after being delivered to the 1st rotary chuck 6A, the attitude of the substrate W is also maintained as the 1st attitude.

[0163] By being delivered from the main carrier robot CR to the 1st rotary chuck 6A, the substrate W is placed on the adsorption surface 21a of the 1st rotary base 21. With the substrate W placed on the adsorption surface 21a, the suction valve 28 is opened. Thereby, the cleaning target surface W2 of the substrate W is adsorbed to the adsorption surface 21a of the 1st rotary base 21 from the lower side. Thereby, as shown in Figure 8A , the substrate W is held in the 1st attitude at the 1st holding position (1st substrate holding step).

[0164] The substrate W placed on the 1st rotary base 21 can also be centered by the centering unit 29 in a manner that the central portion of the protection target surface Wl of the substrate W is substantially aligned with the rotary axis Al before the suction valve 28 is opened.

[0165] Next, after the main carrier robot CR retreats outside the film coating removal device 4A, the protective film forming liquid supply step is started (step S1). In the protective film forming liquid supply step, first, the 1st rotary motor 23 rotates the 1st rotary base 21. Thereby, the substrate W held at the 1st holding position is rotated (1st substrate rotation step).

[0166] After that, the nozzle moving unit 37 moves the moving nozzle 9 to a processing position. The processing position of the moving nozzle 9 is, for example, the central position. With the moving nozzle 9 located at the processing position, the protective film forming liquid valve 51 is opened. Thereby, as shown in Figure 8A , the protective film forming liquid is supplied (sprayed) from the nozzle outlet 9a of the moving nozzle 9 toward the central portion of the protection target surface Wl of the substrate W in the rotated state (protective film forming liquid supply step, protective film forming liquid spray step). The protective film forming liquid supplied to the protection target surface Wl of the substrate W spreads to the entire protection target surface Wl due to centrifugal force. Thereby, as shown in Figure 8B , a liquid film 201 of the protective film forming liquid is formed on the entire protection target surface Wl of the substrate W (liquid film formation step).

[0167] Next, a protective film forming process (step S2) is executed. In the protective film forming process, the protective film 200 is formed in a semi-solid or solid state on the protective object face Wl by thinning the liquid film 201 of the protective film forming liquid 201 and promoting evaporation of the solvent in the liquid film 201 (see FIG. 2B). Figure 8C ).

[0168] In the protective film forming process, the thickness of the liquid film 201 of the protective film forming liquid 201 on the substrate W is thinned (thinning process). Specifically, the protective film forming liquid valve 51 is closed to stop the supply of the protective film forming liquid to the substrate W. Since the substrate W is rotated in a state where the supply of the protective film forming liquid to the protective object face Wl has been stopped, a portion of the protective film forming liquid is excluded from the protective object face Wl (flinging process). Thus, the thickness of the liquid film 201 on the substrate W becomes a suitable thickness. After the protective film forming liquid valve 51 is closed, the moving nozzle 9 is moved to the initial position by the nozzle moving unit 37.

[0169] The centrifugal force generated by the rotation of the substrate W not only excludes the protective film forming liquid from the protective object face Wl of the substrate W, but also acts on the gas in contact with the liquid film 201. By the action of the centrifugal force, the gas forms a gas flow that flows from the center side to the peripheral edge side of the protective object face Wl of the substrate W. By this gas flow, the solvent in the gaseous state in contact with the liquid film 201 is excluded from the gaseous atmosphere in contact with the substrate W. Thus, evaporation (volatilization) of the solvent from the protective film forming liquid on the substrate W is promoted, as shown in FIG. 2B, and the protective film 200 is formed (solvent evaporation process, protective film forming process). As described above, the protective film 200 is rapidly formed on the protective object face Wl after the supply of the protective film forming liquid. In other words, the protective film 200 is applied on the protective object face Wl by the supply of the protective film forming liquid (protective film application process). Figure 8C

[0170] The protective film forming liquid valve 51 can be closed in a state where the protective film forming liquid exists only in the central portion of the protective object face Wl before the protective film forming process is started, as shown in FIG. 2A. In this case, the protective film forming liquid is diffused to the entire protective object face Wl by the centrifugal force generated by the rotation of the substrate W, and the liquid film 201 is thinned. Thus, the amount of the protective film forming liquid excluded from the protective object face Wl can be reduced. Figure 8A

[0171] ​​When the protective film 200 is applied, the central portion of the washing target surface W2 is adsorbed to the adsorption surface 21a of the first rotary base 21. Therefore, the first rotary chuck 6A does not provide a member that contacts the peripheral portion of the substrate W, and the substrate W can be held. That is, the protective film 200 can be applied without providing a member that interferes with the application of the protective film 200 in the vicinity of the peripheral portion of the protective target surface Wl. Therefore, the uniformity of the protective film 200 with respect to the peripheral portion of the protective target surface Wl can be improved. In other words, the protective target surface Wl of the substrate W can be favorably protected.

[0172] The substrate W is carried out from the film application and removal apparatus 4A by the main carrier robot CR in a state in which the protective film 200 is formed on the protective target surface Wl. Specifically, after the rotation of the substrate W is stopped and the suction valve 28 is closed, the main carrier robot CR receives the substrate W from the first rotary chuck 6A. As shown in FIG. 6, the substrate W is carried by the main carrier robot CR in a state in which the hand H of the main carrier robot CR contacts the peripheral portion of the washing target surface W2. The substrate W carried out from the film application and removal apparatus 4A is carried into the inversion unit 5 by the main carrier robot CR. The substrate W carried into the inversion unit 5 is inverted by the inversion unit 5, and the posture of the substrate W is changed from the first posture to the second posture (step S3: first inversion process). Figure 8D The substrate W after inversion by the inversion unit 5 is carried out from the inversion unit 5 by the main carrier robot CR. As shown in FIG. 7, the substrate W is carried by the main carrier robot CR in a state in which the hand H of the main carrier robot CR contacts the peripheral portion of the protective target surface Wl. The substrate W is carried into the physical washing apparatus 4B by the main carrier robot CR, and is delivered to the second rotary chuck 6B. Thus, the substrate W is placed on the plurality of chuck pins 60 in the opened position in a state in which the protective target surface Wl faces downward from the upper side. After the substrate W is placed on the plurality of chuck pins 60 by the main carrier robot CR, the main carrier robot CR retreats outside the physical washing apparatus 4B. Figure 8E The substrate W after inversion by the inversion unit 5 is carried out from the inversion unit 5 by the main carrier robot CR. As shown in FIG. 7, the substrate W is carried by the main carrier robot CR in a state in which the hand H of the main carrier robot CR contacts the peripheral portion of the protective target surface Wl. The substrate W is carried into the physical washing apparatus 4B by the main carrier robot CR, and is delivered to the second rotary chuck 6B. Thus, the substrate W is placed on the plurality of chuck pins 60 in the opened position in a state in which the protective target surface Wl faces downward from the upper side. After the substrate W is placed on the plurality of chuck pins 60 by the main carrier robot CR, the main carrier robot CR retreats outside the physical washing apparatus 4B.

[0173] Figure 8F The substrate W after inversion by the inversion unit 5 is carried out from the inversion unit 5 by the main carrier robot CR. As shown in FIG. 7, the substrate W is carried by the main carrier robot CR in a state in which the hand H of the main carrier robot CR contacts the peripheral portion of the protective target surface Wl. The substrate W is carried into the physical washing apparatus 4B by the main carrier robot CR, and is delivered to the second rotary chuck 6B. Thus, the substrate W is placed on the plurality of chuck pins 60 in the opened position in a state in which the protective target surface Wl faces downward from the upper side. After the substrate W is placed on the plurality of chuck pins 60 by the main carrier robot CR, the main carrier robot CR retreats outside the physical washing apparatus 4B.

[0174] The substrate W after inversion by the inversion unit 5 is carried out from the inversion unit 5 by the main carrier robot CR. As shown in FIG. 7, the substrate W is carried by the main carrier robot CR in a state in which the hand H of the main carrier robot CR contacts the peripheral portion of the protective target surface Wl. The substrate W is carried into the physical washing apparatus 4B by the main carrier robot CR, and is delivered to the second rotary chuck 6B. Thus, the substrate W is placed on the plurality of chuck pins 60 in the opened position in a state in which the protective target surface Wl faces downward from the upper side. After the substrate W is placed on the plurality of chuck pins 60 by the main carrier robot CR, the main carrier robot CR retreats outside the physical washing apparatus 4B. Figure 8G ​As shown, the plurality of chuck pins 60 contact the peripheral portion of the protection target surface Wl and hold the substrate W, and the substrate W is held in the second attitude in the second holding position (second substrate holding step). Since the peripheral portion of the protection target surface Wl is coated with the protective film 200, the plurality of chuck pins 60 can hold the peripheral portion of the substrate W without directly contacting the peripheral portion of the protection target surface Wl. Therefore, contamination of the protection target surface Wl due to holding of the substrate W can be more reliably suppressed.

[0175] In a state where the substrate W is held by the plurality of chuck pins 60, the second rotary motor 63 rotates the second rotary base 61. Thus, the substrate W held in the second holding position is rotated (second substrate rotation step).

[0176] Next, a physical cleaning step of physically cleaning the cleaning target surface W2 of the substrate W is started (step S4). In the physical cleaning step, the scrubbing cleaning unit 70 cleans the cleaning target surface W2 of the substrate W in a state where the protection target surface Wl on which the protective film 200 is formed is held by the second rotary chuck 6B. Specifically, scrubbing cleaning (physical cleaning) of the cleaning target surface W2 of the substrate W is performed by pressing the cleaning brush 72 against the cleaning target surface W2 while supplying a cleaning liquid to the cleaning target surface W2.

[0177] More specifically, in a state where the substrate W is rotated, the cleaning liquid valve 55 is opened. Thus, a cleaning liquid is supplied from the cleaning liquid nozzle 71 toward the central portion of the cleaning target surface W2 of the substrate W. The cleaning liquid supplied to the cleaning target surface W2 spreads to the entire cleaning target surface W2 of the substrate W due to centrifugal force. As shown, the cleaning brush 72 pressed against the cleaning target surface W2 is horizontally moved while a cleaning liquid is supplied to the cleaning target surface W2 of the substrate W, and thus, scrubbing cleaning is performed on the cleaning target surface W2. Thus, the cleaning target surface W2 is cleaned by the cleaning brush 72 by applying a physical force to the cleaning target surface W2. Figure 8G

[0178] The scrubbing cleaning imparts a greater impact energy to the cleaning target surface W2 than cleaning performed by a liquid in a continuous flow. Therefore, contaminant substances are easily splashed compared to cleaning performed by a liquid in a continuous flow. As long as the protective film 200 is coated on the entire protection target surface Wl, the cleaning target surface W2 can be sufficiently cleaned by the physical cleaning, and contamination of the protection target surface Wl due to the physical cleaning can be suppressed.

[0179] In addition, when the scrubbing cleaning is performed, the gas ejected from the lower nozzle 12 and the gas flow path 13 is supplied to the space between the protection target surface Wl and the second rotary base 61 (gas supply step).

[0180] ​Since gas is supplied to the space between the second rotary base 61 and the protected surface Wl, a gas flow from the space to the outside of the space is formed. Therefore, it is possible to suppress the inflow of contaminant substances splashed into the gas atmosphere into the space between the second rotary base 61 and the protected surface Wl and the attachment to the protected surface Wl during the brushing cleaning of the cleaned surface W2. In addition, it is possible to suppress the movement of the cleaning liquid attached to the cleaned surface W2 of the substrate W to the protected surface Wl of the substrate W. Therefore, the protected surface Wl can be well protected.

[0181] The substrate W whose cleaned surface W2 is physically cleaned is carried out from the physical cleaning device 4B by the main carrier robot CR. Specifically, after the rotation of the substrate W is stopped and the plurality of chuck pins 60 are moved to the open position, the substrate W is received from the second rotary chuck 6B by the main carrier robot CR. The substrate W is carried by the main carrier robot CR in a state in which the hand H is in contact with the peripheral portion of the protected surface Wl (refer to the above-described Figure 8F ).

[0182] The substrate W carried out from the physical cleaning device 4B is carried into the turnover unit 5 by the main carrier robot CR. The substrate W carried into the turnover unit 5 is turned over by the turnover unit 5, and the posture of the substrate W is changed to the first posture (step S5: second turnover process). Specifically, the turnover unit 5 is brought into contact with the peripheral portion of the substrate W and turns over the substrate W, and the posture of the substrate W in a state in which the protective film 200 is formed on the protected surface Wl is changed from the second posture to the first posture. The turnover unit 5 functions as a second turnover unit.

[0183] The substrate W turned over by the turnover unit 5 is carried out from the turnover unit 5 by the main carrier robot CR. The substrate W is carried by the main carrier robot CR in a state in which the hand H is in contact with the peripheral portion of the cleaned surface W2 (refer to the above-described Figure 8D ). The substrate W is carried into the film coating removal device 4A by the main carrier robot CR and is handed over to the first rotary chuck 6A. Specifically, the substrate W is placed on the adsorption surface 21a of the first rotary base 21. In this state, the cleaned surface W2 of the substrate W is adsorbed to the adsorption surface 21a of the first rotary base 21 from the lower side by opening the suction valve 28. Thus, as shown in Figure 8H , the substrate W is held in the first posture at the first holding position (third substrate holding process).

[0184] The first rotary chuck 6A holds the substrate W in a state in which the posture is changed from the second posture to the first posture by the turnover unit 5. The first rotary base 21 functions as a third base, and the first rotary chuck 6A functions as a holding mechanism that holds the substrate W at the third holding position Figure 3The third substrate holding unit functions as a third substrate holding unit (the third substrate holding unit is provided at a position shown by W in the drawing). In this embodiment, the third holding position is the same position as the first holding position.

[0185] Next, after the main carrier robot CR retreats outside the film coating removal apparatus 4A, the protective film removal process is started (step S6). In the protective film removal process, first, the first rotary motor 23 rotates the first rotary base 21. By this, the horizontally held substrate W is rotated (third substrate rotation process).

[0186] After that, the nozzle moving unit 37 moves the moving nozzle 9 to the processing position (central position). In a state where the moving nozzle 9 is located at the processing position, the removal liquid valve 52 is opened. By this, as shown by W in the drawing, the removal liquid is supplied (sprayed) from the nozzle outlet 9a of the moving nozzle 9 toward the central portion of the protective target surface Wl of the substrate W in the rotated state (removal liquid supply process, removal liquid spray process). The moving nozzle 9 supplies the removal liquid to the protective target surface Wl of the substrate W in a state where the posture is changed from the second posture to the first posture by the turnover unit 5 and the substrate W is held by the first rotary chuck 6A. Figure 8H

[0187] The removal liquid supplied to the protective target surface Wl of the substrate W is diffused to the entire protective target surface Wl by the centrifugal force, and is discharged to the outside of the substrate W from the peripheral portion of the substrate W. By the action of the removal liquid, the protective film 200 is removed from the protective target surface Wl. In detail, the protective film 200 of the protective target surface Wl is peeled off, and is discharged to the outside of the substrate W together with the removal liquid. If the removal liquid is supplied to the protective target surface Wl from the upper side, the removal liquid is easily diffused to the entire protective target surface Wl uniformly compared with the configuration where the removal liquid is supplied to the protective target surface Wl toward the lower side. Therefore, the protective film 200 can be removed favorably from the protective target surface Wl.

[0188] Further, in the protective film removal process, the removal of the protective film 200 is performed in a state where the substrate W is held on the first rotary chuck 6A using the same components as those used when the protective film 200 is coated. Therefore, compared with the case where another substrate holding unit is provided in order to remove the protective film 200, the miniaturization of the substrate processing system 1 can be achieved.

[0189] After the protective film removal process (step S6), the rinsing process (step S7) in which the removal liquid is rinsed off from the protective target surface Wl of the substrate W using a rinsing liquid, and the residue removal process (step S8) in which the residue of the protective film 200 is removed from the protective target surface Wl of the substrate W using a residue removal liquid are sequentially performed.

[0190] ​In the rinsing process, the rinsing liquid is supplied (sprayed) from the fixed nozzle 10 toward the central portion of the protection target surface Wl of the substrate W in the rotating state (rinsing liquid supply process, rinsing liquid spray process). In the residue removing process, the residue removing liquid is supplied (sprayed) from the central nozzle 11 toward the central portion of the protection target surface Wl of the substrate W in the rotating state (residue removing liquid supply process, residue removing liquid spray process).

[0191] Sometimes, even after the protective film is peeled from the substrate W by the removing liquid and removed from the substrate W, the residue of the protective film 200 remains on the protection target surface Wl of the substrate W. The residue removing liquid supplied to the protection target surface Wl of the substrate W can dissolve such residue of the protective film 200. The residue removing liquid supplied to the protection target surface Wl of the substrate W from the central nozzle 11 spreads to the entire protection target surface Wl of the substrate W by the centrifugal force and is discharged from the peripheral portion of the substrate W to the outside of the substrate W. The residue removing liquid spreads on the protection target surface Wl and dissolves the residue of the protective film. Thus, the residue of the protective film on the substrate W is removed.

[0192] After the residue removing process, the first rotation motor 23 accelerates the rotation of the substrate W and rotates the substrate W at a high rotational speed (for example, several thousands rpm) (substrate drying process: step S9). Thus, the liquid is removed from the substrate W and the substrate W is dried. When a certain time elapses after the start of the high-speed rotation of the substrate W, the first rotation motor 23 stops the rotation. Thus, the rotation of the substrate W is stopped.

[0193] After that, the main transfer robot CR enters the film coating and removing device 4A, receives the processed substrate W from the first rotation chuck 6A, and carries out the substrate W to the outside of the film coating and removing device 4A. The substrate W carried out from the film coating and removing device 4A is received from the main transfer robot CR to the transfer conveyer robot IR via the turn-over unit 5. The transfer conveyer robot IR receives the substrate W from the turn-over unit 5 and houses the substrate W in the carrier C in a state where the attitude of the substrate W is maintained as the first attitude (also refer to Figure 1B ).

[0194] Next, the case where the protective film 200 is removed from the substrate W will be described in detail using Figures 9A-9C . Figures 9A-9C is a schematic view for explaining the case where the protective film 200 is removed from the substrate W.

[0195] The protection target surface Wl of the substrate W sometimes has a fine particle 203 attached thereto. Since the protective film forming liquid is solidified to the extent of maintaining a fixed shape, the fine particle 203 is incorporated into the protective film 200 after being peeled from the protection target surface Wl. Therefore, the protective film 200 formed in the protective film forming process (step S2) maintains the fine particle 203 attached to the protection target surface Wl of the substrate W as shown in Figure 9A .

[0196] Before the protective film removing step is performed, the protective film 200 contains a high-solubility component in a solid state (high-solubility solid 210) and a low-solubility component in a solid state (low-solubility solid 211). The high-solubility solid 210 and the low-solubility solid 211 are formed by evaporation of at least a portion of the solvent contained in the protective film forming liquid.

[0197] Referring to Figure 9B the high-solubility solid 210 is selectively dissolved by the removing liquid. That is, the protective film 200 is partially dissolved (dissolution step, partial dissolution step).

[0198] By "selectively dissolving the high-solubility solid 210", it is not meant that only the high-solubility solid 210 in a solid state is dissolved. By "selectively dissolving the high-solubility solid 210", it is meant that a small amount of the low-solubility solid 211 in a solid state is dissolved, and a large portion of the high-solubility solid 210 is dissolved.

[0199] With the selective dissolution of the high-solubility solid 210 as a trigger, a portion in which the high-solubility solid 210 is segregated in the protective film 200 is formed as a through-hole 202 (through-hole forming step) as a removing liquid path.

[0200] The portion in which the high-solubility solid 210 is segregated is not only the high-solubility solid 210, but also the low-solubility solid 211. The removing liquid not only dissolves the high-solubility solid 210, but also dissolves the low-solubility solid 211 around the high-solubility solid 210, and thus the formation of the through-hole 202 is facilitated.

[0201] The through-hole 202 is, for example, several nm in diameter in plan view. The through-hole 202 does not need to be formed in a degree that can be observed. That is, as long as a removing liquid path for the removing liquid to move from the upper surface of the protective film 200 to the protection target surface W1 of the substrate W is formed in the protective film 200, and as long as the removing liquid path penetrates the protective film 200 as a whole.

[0202] Here, in a case where the solvent is moderately left in the protective film 200, the removing liquid dissolves the solvent left in the protective film 200, and partially dissolves the protective film 200. In detail, the removing liquid dissolves the high-solubility solid 210 in the protective film 200 to form the through-hole 202 (gap, path), while dissolving the solvent left in the protective film 200. Thus, the removing liquid easily enters the protective film 200 (dissolution entering step). The removing liquid reaches the interface between the substrate W and the low-solubility solid 211 through the through-hole 202.

[0203] The removal liquid that reaches the object-to-be-protected surface Wl of the substrate W acts on the interface between the protective film 200 and the substrate W, peels the protective film 200, and removes (peels and removes) the peeled protective film 200 from the object-to-be-protected surface Wl of the substrate W (peeling and removing step).

[0204] In detail, the low-solubility solid 211 has low solubility in the removal liquid, and most of the low-solubility solid 211 remains in a solid state. Therefore, the removal liquid that reaches the vicinity of the object-to-be-protected surface Wl of the substrate W via the through-hole 202 causes a small amount of the portion of the low-solubility solid 211 in the vicinity of the object-to-be-protected surface Wl of the substrate W to dissolve. As a result, as shown in an enlarged view of FIG. 6, the removal liquid slowly dissolves the low-solubility solid 211 in the vicinity of the object-to-be-protected surface Wl of the substrate W and enters the gap G between the protective film 200 and the object-to-be-protected surface Wl of the substrate W (removal liquid entering step). Figure 9B

[0205] Then, for example, a crack is formed in the protective film 200 from the periphery of the through-hole 202. Therefore, the high-solubility solid 210 is also called a crack-formation component. The protective film 200 is split into pieces 204 due to the formation of the crack. As shown in FIG. 7, the pieces 204 of the protective film 200 are peeled from the substrate W while holding the fine particles 203 (protective film splitting step, protective film removing step). Figure 9C

[0206] Then, the supply of the removal liquid is continued, and the protective film 200 that becomes the pieces 204 is washed away while holding the fine particles 203 by the removal liquid. In other words, the pieces 204 that hold the fine particles 203 are pushed out to the outside of the substrate W, and are excluded from the object-to-be-protected surface Wl of the substrate W (protective film excluding step, removal object excluding step). As a result, the object-to-be-protected surface Wl of the substrate W can be cleaned well.

[0207] As described above, the high-solubility solid 210 is dissolved by supplying the removal liquid to the object-to-be-protected surface Wl of the substrate W, and the protective film 200 is peeled from the object-to-be-protected surface Wl of the substrate.

[0208] In this way, in the case where the protective film forming liquid containing the high-solubility component and the low-solubility component is used, the removal liquid can be rapidly applied to the interface between the protective film 200 and the substrate W, and most of the protective film 200 can be maintained in a solid state. Since the low-solubility component can be removed from the object-to-be-protected surface Wl of the substrate W while being maintained in a solid state, the fine particles 203 can be held by the low-solubility solid 211, and the removal liquid can be applied to the interface between the low-solubility solid 211 and the substrate W.

[0209] As a result, the protective film 200 can be rapidly peeled from the substrate W, and the fine particles 203 can be efficiently removed from the substrate W together with the protective film 200. ​​

[0210] According to the first embodiment, the substrate W can be carried from the carrier C to the first rotary chuck 6A by the carrying unit (transfer robot IR and main carrying robot CR). The substrate W is housed in the carrier C in the first attitude. Therefore, the substrate W housed in the carrier C can be held on the first rotary chuck 6A in the first attitude without being flipped by the flipping unit 5.

[0211] When the substrate W is flipped, the peripheral portion of the substrate W comes into contact with the flipping unit 5. Therefore, as long as the substrate W is flipped in a state where the protective film 200 is applied to at least the peripheral portion of the protection target surface Wl, contamination caused by contact with the flipping unit 5 can be suppressed, and the attitude of the substrate W can be changed to the second attitude.

[0212] Thereafter, the washing target surface W2 can be washed from the upper side by the brush washing unit 70 in a state where the attitude of the substrate W is the second attitude. Therefore, the washing target surface W2 can be washed well without being limited in space by the second rotary base 61. Since it is not limited in space by the second rotary base 61, the washing of the washing target surface W2 can be performed by a unit such as the brush washing unit 70, which is larger in size than the lower side nozzle 12.

[0213] As described above, contamination of the protection target surface Wl can be suppressed, and the washing target surface W2 can be washed well.

[0214] According to the first embodiment, the protection target surface Wl is protected by applying the protective film 200. Therefore, compared to a case where the protection target surface Wl is protected by a protective tape different from the first embodiment, the adhesive of the protective tape can be suppressed from being rolled up when the washing is performed by brushing, and the rolled-up adhesive can be suppressed from adhering to the washing target surface W2 of the substrate.

[0215] In a case where the adhesive adheres to the washing target surface W2, when the washing target surface W2 is adsorbed to the first rotary base 21 in order to remove the protective tape, there is a concern that the substrate W can be broken by the adhesive. According to the first embodiment, since the adhesive does not adhere to the first rotary base 21, the breaking of the substrate W can be suppressed.

[0216] In a case where the protective tape is used, in order to suppress the breaking of the substrate W, the washing position of the washing brush 72 or the adsorption position of the first rotary base 21 must be adjusted with high precision in order to suppress the rolling up of the adhesive and the breaking of the substrate.

[0217] Therefore, according to the first embodiment, compared to a configuration in which the protection target surface Wl is protected by using a protective tape, the protection of the protection target surface Wl and the washing of the washing target surface W2 can be suppressed from being complicated.

[0218] As Figure 10As shown, the protective film 200 can also be applied only to the peripheral portion of the surface Wl to be protected of the substrate W. The plurality of chuck pins 60 of the second rotary chuck 6B hold the substrate W by holding the peripheral portion of the substrate W in the second posture, so even if the protective film 200 is applied only to the peripheral portion of the surface Wl to be protected of the substrate W, the surface Wl to be protected of the substrate W can be prevented from being contaminated by the holding of the second rotary chuck 6B. In addition, the substrate W is turned over by the turning unit 5 by holding the peripheral portion of the substrate W with the first and second facing members 91 and 92, so even if the protective film 200 is applied only to the peripheral portion of the surface Wl to be protected of the substrate W, the surface Wl to be protected of the substrate W can be prevented from being contaminated by the turning unit 5.

[0219] Likewise, the surface Wl to be protected of the substrate W can be prevented from being contaminated by the plurality of first support members 82, the plurality of second support members 83, the plurality of first lower support members 86, and the plurality of second lower support members 87 of the turning unit 5. Likewise, the surface Wl to be protected of the substrate W can be prevented from being contaminated by the robot hands H of the plurality of transfer robots. As such, the protective film 200 need only be applied at least to the peripheral portion of the surface Wl to be protected. However, as described above, by applying the protective film 200 to the entire surface Wl to be protected, the surface Wl to be protected can be more effectively protected from contaminants splashed during physical cleaning such as brushing and the like.

[0220] Figure 11 is a schematic cross-sectional view illustrating a configuration example of the physical cleaning device 4B of the first variation of the first embodiment.

[0221] The second rotary chuck 6B of the physical cleaning device 4B of the first variation of the first embodiment is configured such that the second rotary base 121 faces the substrate W from the lower side and holds the central portion of the surface W2 to be cleaned of the substrate W by adsorption.

[0222] The second rotary base 121 has an adsorption surface 121a that adsorbs the surface W2 to be cleaned of the substrate W. The adsorption surface 121a is, for example, the upper surface of the second rotary base 121 and is a circular surface with the center passing through the rotation axis A2. The diameter of the adsorption surface 121a is smaller than the diameter of the substrate W. The upper end portion of the second rotary shaft 62 protrudes from the second motor housing 64 and is coupled to the second rotary base 121.

[0223] A suction path 125 is inserted into the second rotary base 121 and the second rotary shaft 62. The suction path 125 has a suction port 125a that protrudes from the center of the adsorption surface 121a of the second rotary base 121. The suction path 125 is connected to a suction pipe 126. The suction pipe 126 is connected to a suction device 127 such as a vacuum pump.

[0224] A suction valve 128 for opening and closing the suction path 125 is provided in the suction path 125. By opening the suction valve 128, the substrate W disposed on the suction surface 121a of the 2nd rotary base 121 is sucked by the suction port 125a of the suction path 125. Thus, the substrate W is sucked from the lower side to the suction surface 121a and held at a specific holding position (position of the substrate W, 2nd holding position). Figure 11 The 2nd rotary chuck 6B is an example of a 2nd suction holding unit that suctions and holds the substrate W to the 2nd rotary base 121.

[0225] The 2nd rotary base 121 is rotated by rotating the 2nd rotary shaft 62 by the 2nd rotary motor 63. Thus, the substrate W is rotated together with the 2nd rotary base 121 around the rotation axis A2.

[0226] The 2nd rotary chuck 6B can also be provided with a centering unit 129 that horizontally moves the substrate W so that the center of the cleaning target surface W2 of the substrate W approaches the rotation axis A2.

[0227] In the 1st variation, the protective film 200 is applied to the entire protective target surface Wl of the substrate W, and the 2nd rotary chuck 6B suctions the central portion of the protective target surface Wl to the 2nd rotary base 121 to hold the substrate W. Thus, the central portion of the protective film 200 can be suctioned to the 2nd rotary base 121 to hold the substrate W without directly contacting the central portion of the protective target surface Wl of the substrate W with the 2nd rotary base 121. Therefore, the central portion of the protective target surface Wl can be prevented from being contaminated by holding the substrate W during physical cleaning.

[0228] <2nd Embodiment>

[0229] Figure 12 is a schematic cross-sectional view for illustrating a configuration example of the physical cleaning device 4B provided in the substrate processing system 1P of the 2nd embodiment. Figure 12 In the 2nd embodiment, the configuration equivalent to that of the above-described Figs. 1 to Figure 11 The configuration equivalent to that shown in the above-described Figs. 1 to 3 is denoted by the same reference numerals as those of Figs. 1 to 3, and the description thereof is omitted.

[0230] The substrate processing system 1P is mainly different from the substrate processing system 1 of the 1st embodiment in that the physical cleaning device 4B of the 2nd embodiment includes a spray cleaning unit 130 (cleaning unit) that performs spray cleaning (physical cleaning) on the cleaning target surface W2 of the substrate W instead of the brush cleaning unit 70. The spray cleaning is a cleaning method that impinges the cleaning target surface W2 with cleaning liquid in a droplet state to apply a physical force to the cleaning target surface W2. The physical force of the spray cleaning is the impact (kinetic energy) when the droplet D of the cleaning liquid impinges the cleaning target surface W2.

[0231] The spray cleaning unit 130 includes a spray nozzle 131 that sprays droplets of a large amount of cleaning liquid (e.g., DIW), a swing arm 132 that holds the spray nozzle 131 at a tip end, and an arm drive mechanism 133 that swings the swing arm 132.

[0232] The arm drive mechanism 133 is configured to be capable of swinging the swing arm 132 along a horizontal plane or moving the swing arm 132 up and down. The arm drive mechanism 133 includes, for example, a lift actuator (not shown) that moves the swing arm 132 up and down and a swing actuator (not shown) that swings the swing arm 132. The lift actuator can be an electric motor or a cylinder. The swing actuator can also be electric or a cylinder.

[0233] The spray cleaning unit 130 includes a cleaning liquid pipe 134 that guides cleaning liquid from a cleaning liquid supply source to the spray nozzle 131, a cleaning liquid valve 135 that opens or closes a flow path in the cleaning liquid pipe 134, a pump 136 that sends cleaning liquid to the cleaning liquid pipe 134, a discharge pipe 137 that discharges cleaning liquid in the spray nozzle 131, and a discharge valve 138 that opens or closes a flow path in the discharge pipe 137.

[0234] Cleaning liquid is always supplied to the spray nozzle 131 at a certain pressure (e.g., 10 MPa or less). The pump 136 is capable of changing the pressure of the cleaning liquid supplied to the spray nozzle 131 to an arbitrary pressure.

[0235] The spray cleaning unit 130 includes a piezoelectric element 139 built in the spray nozzle 131. To the piezoelectric element 139, a voltage application unit 140 is connected via a wiring 141. The voltage application unit 140 applies an alternating voltage to the piezoelectric element 139, and causes the piezoelectric element 139 to vibrate at a frequency corresponding to the frequency of the applied alternating voltage. The voltage application unit 140 includes, for example, a power converter. The voltage application unit 140 is capable of changing the frequency of the alternating voltage applied to the piezoelectric element 139 to an arbitrary frequency (e.g., several hundred KHz to several MHz).

[0236] The spray nozzle 131 has a nozzle body 131a, a cleaning liquid flow passage 131b formed inside the nozzle body 131a, and a plurality of spray ports 131c (spray outlets) connected to the cleaning liquid flow passage 131b and opened from the surface of the nozzle body 131a. The cleaning liquid flow passage 131b is a flow path through which cleaning liquid is supplied from the cleaning liquid pipe 134 and discharged to the discharge pipe 137.

[0237] The spray nozzle 131 is always supplied with the cleaning liquid at high pressure. In the state where the discharge valve 138 is closed, the pressure (hydraulic pressure) of the cleaning liquid in the cleaning liquid flow path 131b is high. Therefore, in the state where the discharge valve 138 is closed, the cleaning liquid is sprayed from each spray port 131c by the hydraulic pressure. Furthermore, in the state where the discharge valve 138 is closed, when an alternating-current voltage is applied to the piezoelectric element 139, the cleaning liquid flowing along the cleaning liquid flow path 131b is given the vibration of the piezoelectric element 139, and the cleaning liquid sprayed from each spray port 131c is broken up by the vibration. Therefore, in the state where the discharge valve 138 is closed, when an alternating-current voltage is applied to the piezoelectric element 139, the cleaning liquid in the form of droplets is sprayed from each spray port 131c. Thus, it is possible to simultaneously spray a large amount of cleaning liquid in the form of droplets having a uniform particle size at a uniform speed.

[0238] The cleaning liquid sprayed from the spray nozzle 131 is not limited to DIW. The cleaning liquid sprayed from the spray nozzle 131 is selected from the rinsing liquids exemplified as the cleaning liquid used in the film coating removal apparatus 4A.

[0239] According to the substrate processing system 1P of the second embodiment, it is possible to perform Figure 7 the substrate processing shown in FIG. 8. In the physical cleaning step (step S4), the spray cleaning unit 130 cleans the cleaning target surface W2 of the substrate W in the state where the protective film 200 is formed on the protection target surface Wl and the substrate W is held by the second rotary chuck 6B. In detail, spray cleaning (physical cleaning) is performed, that is, the cleaning target surface W2 is cleaned by spraying a large amount of cleaning liquid in the form of droplets D against the cleaning target surface W2, thereby applying a physical force to the cleaning target surface W2.

[0240] In detail, the cleaning liquid valve 135 is opened and the discharge valve 138 is closed, and the voltage application unit 140 applies an alternating-current voltage to the piezoelectric element 139. Thus, the cleaning liquid in the form of droplets is supplied (sprayed) from the spray nozzle 131 toward the central region of the upper surface of the substrate W in the state of rotation (droplet supply step). At this time, the arm driving mechanism 133 moves the swing arm 132 in the radial direction of the substrate W, and thus it is possible to spray clean the entire cleaning target surface W2 of the substrate W.

[0241] According to the second embodiment, the spray cleaning unit 130 includes the spray nozzle 131 that spray cleans the cleaning target surface W2 by spraying the cleaning liquid in the form of droplets D against the cleaning target surface W2. The spray cleaning gives a greater impact energy to the cleaning target surface W2 than cleaning performed using a liquid in a continuous flow. Therefore, the contaminant is easily splashed compared to cleaning performed using a liquid in a continuous flow.

[0242] As with the 2nd embodiment, as long as the protective film 200 is applied over the entire protective target surface W1, the cleaning target surface W2 can be sufficiently cleaned by physical cleaning, and contamination of the protective target surface W1 caused by physical cleaning can be suppressed.

[0243] For example, in a case where DIW is used as the cleaning liquid and ammonia water is used as the removal liquid, the solubility of the protective film 200 in the cleaning liquid is lower than the solubility of the protective film 200 in the removal liquid. Even in a case where the cleaning liquid attached to the cleaning target surface W2 moves to the protective target surface W1 along the peripheral edge portion of the substrate W, or the cleaning liquid that collides with the cleaning target surface W2 splashes from the cleaning target surface W2 to float around the substrate W and is attached to the protective target surface W1, the undesired dissolution of the protective film 200 caused by the cleaning liquid can be suppressed.

[0244] <3rd Embodiment>

[0245] Figure 13A is a plan view for illustrating the configuration of the substrate processing apparatus 2Q included in the substrate processing system 1Q of the 3rd embodiment. Figure 13B is an explanatory front view for illustrating the configuration of the substrate processing apparatus 2Q of the 3rd embodiment. In Figure 13A and Figure 13B , and the following Figures 14-17 , the same reference numerals are attached to the configurations equivalent to those illustrated in Figure 12 , and the explanation thereof is omitted.

[0246] The substrate processing apparatus 2Q is different from the substrate processing apparatus 2 of the 1st embodiment (refer to Figure 1A ) in that it is configured to be able to remove the protective film from the protective target surface W1 by dry processing. In detail, the substrate processing apparatus 2Q includes a plurality of liquid processing apparatuses 4, a plurality of transfer robots, a turnover unit 5A (1st turnover unit), a turnover unit 5B (2nd turnover unit), and a plurality of dry processing apparatuses 14 that perform dry processing on the substrate W.

[0247] In the 3rd embodiment, the plurality of transfer robots includes: a transfer-in / out robot IR that performs transfer-in and transfer-out of the substrate W with respect to the carrier C on the load port LP; a 1st main transfer robot CR1 that performs handover of the substrate W between the transfer-in / out robot IR and performs transfer-in and transfer-out of the substrate W with respect to the plurality of liquid processing apparatuses 4; and a 2nd main transfer robot CR2 that performs handover of the substrate W between the 1st main transfer robot CR1 and performs transfer-in and transfer-out of the substrate W with respect to the plurality of dry processing apparatuses 14.

[0248] Flipping unit 5A receives substrate W from transfer robot IR and first main transfer robot CR1, flipping substrate W to change its orientation to either a first orientation or a second orientation. Flipping unit 5B receives substrate W from first main transfer robot CR1 and second main transfer robot CR2, flipping substrate W to change its orientation to either a first orientation or a second orientation. The configuration and operation of flipping units 5A and 5B are similar to... Figures 5A-5D The flipping unit 5 shown is the same.

[0249] The transfer robot IR, the first main transfer robot CR1, and the second main transfer robot CR2 are configured on the transfer path TR. The flipping unit 5A is located on the transfer path TR, between the transfer robot IR and the first main transfer robot CR1. The flipping unit 5B is located on the transfer path TR, between the first main transfer robot CR1 and the second main transfer robot CR2.

[0250] Each transport robot is a multi-joint arm robot comprising a pair of multi-joint arms AR and a pair of robotic arms H. The pair of robotic arms H are respectively disposed at the front end of the pair of multi-joint arms AR in a vertically spaced manner. The robotic arms H of each transport robot are configured to contact and hold the substrate W with the peripheral portion of the downward-facing surface of the object to be cleaned W2 and the object to be protected W1.

[0251] The multiple liquid processing apparatus 4 includes: multiple film coating apparatus 4C for coating a protective film onto the protective surface W1 of the substrate W; and multiple physical cleaning apparatus 4B for performing physical cleaning on the cleaning surface W2 of the substrate W. The multiple dry processing apparatus 14 includes multiple film removal apparatus 14A for removing the protective film from the protective surface W1 of the substrate W.

[0252] Multiple liquid processing units 4 form four liquid processing towers respectively arranged in four horizontally separated locations. Each liquid processing tower comprises multiple layers stacked along the vertical direction. Figure 13B In the example, there are 3 liquid processing units 4. Two liquid processing towers are arranged on each side of the transport path TR. Multiple dry processing units 14 form 2 dry processing towers, which are located on the opposite side from the transfer robot IR, compared to the 4 liquid processing towers. One of the 2 dry processing towers is arranged on each side of the transport path TR.

[0253] In this embodiment, the two processing towers on the IR side of the transfer robot include multiple film coating devices 4C, and the two processing towers on the opposite side of the IR side of the transfer robot include multiple ( Figure 13B In the example, there are 3 physical cleaning units 4B. The 2 dry treatment towers contain multiple membrane removal units 14A.

[0254] like Figure 14 As shown, the film coating apparatus 4C, except for the moving nozzle 9, has the same film coating removal apparatus 4A as in the first embodiment (see reference 4A). Figure 3 The same configuration applies. Specifically, the protective film forming liquid piping 41 is directly connected to the movable nozzle 9 of the film coating apparatus 4C, which is configured not to spray removal liquid. Furthermore, the film coating apparatus 4C does not have rinsing liquid and residue removal liquid supply units, i.e., the fixed nozzle 10 and the central nozzle 11.

[0255] like Figure 13A As shown, each membrane removal device 14A includes, for example, a third chamber 8C, which houses a processing container 150 made of a metal such as aluminum or stainless steel whose surface has been anodized (alumina film treatment). Like the first chamber 8A, the third chamber 8C has an inlet / outlet (not shown) and a gate unit (not shown).

[0256] Multiple transfer robots (transfer robot IR, first main transfer robot CR1 and second main transfer robot CR2) constitute a transfer unit for transferring substrate W between multiple carriers C (multiple loading ports LP), flipping unit 5, first rotating chuck 6A, second rotating chuck 6B and processing container 150.

[0257] Figure 15 This is a schematic cross-sectional view of the membrane removal apparatus 14A. The membrane removal apparatus 14A further includes: a processing container 150; a processing gas piping 152 for guiding processing gas from a processing gas supply unit 151 into the processing container 150; an exhaust piping 153 for discharging the gaseous atmosphere from the processing container 150; a pressure regulating valve 154, disposed in the exhaust piping 153, for regulating the pressure within the processing container 150; and a plasma generation unit 155 (dry removal unit) for converting the processing gas within the processing container 150 into plasma. The plasma generation unit 155 includes: an upper electrode 156 disposed above the substrate W; and a lower electrode 157 (third base), disposed opposite to the upper electrode 156, on which the substrate W is placed.

[0258] The lower electrode 157 is electrically connected to a power supply device 160. The power supply device 160 provides high-frequency power (high-frequency power for plasma excitation) to the lower electrode 157. The power supply device 160 includes a filter, a matching device, a power supply, etc. A substrate W inlet / outlet 150a is provided on the side wall of the processing container 150, and the processing container 150 has a gate valve 150b that opens or closes the inlet / outlet 150a. The substrate W is held horizontally in a specific holding position by being placed on the lower electrode 157. Figure 15 The position of substrate W and the third holding position are shown.

[0259] Although not shown, a plurality of lift pins for lifting the substrate W from the lower electrode 157 can be provided, and the plurality of lift pins can be moved between a retracted position in which the front end portion is located on the lower side than the upper surface of the lower electrode 157 and a lifted position in which the front end portion is located on the upper side than the upper surface of the lower electrode 157.

[0260] The processing gas supply section 151 includes, for example, a gas supply source that supplies a processing gas, a purge gas, or the like required for a process treatment of a substrate in the processing container 150 or a cleaning treatment in the processing container 150, and a valve and a mass flow controller that control introduction of the gas from the gas supply source.

[0261] The plasma generation unit 155 is capable of changing the processing gas in the processing container 150 into plasma, and directly vaporizes the protective film on the substrate W without passing through a liquid state by a decomposition reaction or an oxidation reaction of an oxygen radical or the like. The processing gas is, for example, an ashing gas. The ashing gas is a gas including at least one of oxygen (O2 gas) and carbon dioxide (CO2 gas).

[0262] Figure 16 is a flowchart for explaining a specific substrate processing flow of the substrate processing system 1Q of the third embodiment. The substrate processing system 1Q of the third embodiment performs a substrate processing different from the substrate processing shown in Figure 7 in that the purge process (step S7), the residue removal process (step S8), and the drying process (step S9) are omitted. Hereinafter, an example of the substrate processing performed by the substrate processing system 1Q of the third embodiment will be described focusing on the difference from the substrate processing of the first embodiment.

[0263] In detail, first, the unprocessed substrate W is carried out of the carrier C by the transfer robot IR. The transfer robot IR delivers the substrate W to the first main carrier robot CR1 via the turn unit 5A. The first main carrier robot CR1 carries the substrate W received from the transfer robot IR into the film coating device 4C, and delivers it to the first rotary chuck 6A.

[0264] The substrate W is housed in the carrier C in the first attitude (refer to Figure 13B ). Therefore, after being delivered to the first rotary chuck 6A, the attitude of the substrate W is also maintained in the first attitude. Then, as with the substrate processing of the first embodiment, the protective film 200 is coated on the protection target surface W1 of the substrate W using the film coating device 4C (refer to Figures 8A-8C ). In other words, the protective film formation liquid supply process (step S1) and the protective film formation process (step S2) are performed using the film coating device 4C.

[0265] In a state where the protective film 200 is formed on the protection target surface Wl, the substrate W is carried out from the film coating device 4C by the first main carrier robot CRl. The substrate W is carried by the first main carrier robot CRl in a state where the hand H is in contact with the peripheral portion of the surface to be cleaned W2. The substrate W carried out from the film coating device 4C is carried into the turnover unit 5A by the first main carrier robot CRl. The substrate W carried into the turnover unit 5A is turned over by the turnover unit 5A, and the posture of the substrate W in a state where the protective film 200 is formed on the protection target surface Wl is changed from the first posture to the second posture (step S3: first turnover process). In detail, the turnover unit 5A is brought into contact with the peripheral portion of the substrate W and turns over the substrate W, and the posture of the substrate W in a state where the protective film 200 is formed on the protection target surface Wl is changed from the first posture to the second posture.

[0266] The substrate W turned over by the turnover unit 5A is carried out from the turnover unit 5A by the first main carrier robot CRl. The substrate W is carried by the first main carrier robot CRl in a state where the hand H is in contact with the peripheral portion of the protection target surface Wl. The substrate W is carried into the physical cleaning device 4B by the first main carrier robot CRl, and is delivered to the second rotary chuck 6B. Then, as with the substrate processing of the second embodiment, physical cleaning is performed on the surface to be cleaned W2 of the substrate W by the physical cleaning device 4B (physical cleaning process: step S4).

[0267] After the physical cleaning process (step S4), the substrate W is carried out from the physical cleaning device 4B by the first main carrier robot CRl, and is then carried into the turnover unit 5B. The substrate W carried into the turnover unit 5B is turned over by the turnover unit 5B, and the posture of the substrate W is changed to the first posture (step S5: second turnover process). In detail, the turnover unit 5B is brought into contact with the peripheral portion of the substrate W and turns over the substrate W, and the posture of the substrate W in a state where the protective film 200 is formed on the protection target surface Wl is changed from the second posture to the first posture.

[0268] The substrate W turned over by the turnover unit 5B is carried out from the turnover unit 5B by the second main carrier robot CR2. The substrate W is carried by the second main carrier robot CR2 in a state where the hand H is in contact with the peripheral portion of the surface to be cleaned W2. Then, the substrate W is carried into the film removal device 14A by the second main carrier robot CR2, and is delivered to the plasma generation unit 155. In detail, the substrate W is placed on the lower electrode 157. Thus, as shown in FIG. 8, the substrate W is held in the first posture at the third holding position (third substrate holding process). As such, the lower electrode 157 holds the substrate in a state where the posture is changed from the second posture to the first posture by the turnover unit 5B. The lower electrode 157 is an example of a third substrate holding unit. Figure 15

[0269] ​Then, the ashing gas is introduced into the processing container 150 from the processing gas supply section 151, and the opening degree of the pressure regulating valve 154 is controlled so that the pressure in the processing container 150 becomes a specific ashing set pressure (ash gas introduction step). Subsequently, the high frequency is applied from the power supply device 160. For example, the high frequency of 40 MHz is applied at a power of 1000 W. By this, the plasma of oxygen is excited, and the protective film 200 is changed directly to a gas without passing through a liquid state by a chemical reaction caused by the plasma in the processing container 150. By this, the protective film 200 is removed from the substrate W (protective film gasification removal step). After a specific time elapses from the start of the high frequency application, the high frequency from the power supply device 160 is stopped, and the oxygen introduction is stopped.

[0270] As such, the plasma generating unit 155 removes the protective film 200 from the protective object surface Wl by performing the plasma treatment on the protective object surface Wl of the substrate W on which the protective film 200 is formed and which is held in the state of the lower electrode 157.

[0271] After that, the 2nd main carrier robot CR2 enters the film removal device 14A, receives the processed substrate W from the lower electrode 157, and carries out to the outside of the film removal device 14A. The substrate W carried out from the film removal device 14A passes through the turn unit 5B, the 1st main carrier robot CRl, and the turn unit 5A in this order, and is delivered from the 2nd main carrier robot CR2 to the transfer robot IR. The transfer robot IR accommodates the substrate W into the carrier C while maintaining the posture of the substrate W in the 1st posture (also refer to Figure 13B ).

[0272] In addition, unlike the example shown in Figure 15 , the protective film 200 can be removed by light irradiation. For example, as shown in Figure 17 , the film removal device 14A can include a processing container 150, a pedestal 170 (3rd pedestal) disposed in the processing container 150 to place the substrate W, and a light irradiation unit 171 (dry removal unit) to irradiate light such as UV (ultraviolet) toward the protective object surface Wl of the substrate W placed on the pedestal 170. In this case, the protective film 200 on the substrate W is decomposed by the light irradiation and is changed directly to a gas without passing through a liquid state. The light irradiation unit 171 includes, for example, a plurality of light irradiation lamps. The power supply device 172 to supply power to the light irradiation lamps is connected to the light irradiation unit 171.

[0273] In the case of removing the protective film 200 using the light irradiation unit 171, the substrate W carried into the film removal device 14A is placed on the pedestal 170, and thus, as shown in Figure 17The substrate W is held in the third holding position (third substrate holding step) in the first posture as shown. The pedestal 170 is an example of a third substrate holding unit.

[0274] Then, power is supplied from the power supply device 172, and light such as UV is irradiated from the light irradiation unit 171 (light irradiation step). The protective film 200 is changed from a liquid state directly to a gas by the light irradiation, and thus is removed from the substrate W (protective film gasification removal step).

[0275] As such, the light irradiation unit 171 removes the protective film 200 from the object surface W1 by performing a light irradiation process on the object surface W1 of the substrate W on which the protective film 200 is formed and which is held in the state of the pedestal 170.

[0276] As described above, the film removal device 14A performs a plasma process or a light irradiation process on the object surface W1 of the substrate W, and thus can remove the protective film 200 from the object surface W1 of the substrate W without supplying a liquid to the substrate W. Therefore, it is possible to omit a step of drying the substrate W, and it is possible to suppress the occurrence of watermarks (drying marks) when the object surface W1 is dried.

[0277] <Example of protective film forming liquid>

[0278] Hereinafter, an example of each component in the protective film forming liquid used in the embodiment will be described.

[0279] Hereinafter, "C x～y ", "C x～ C y ", and "C x " and the like mean the number of carbons in a molecule or a substituent. For example, C 1～6 An alkyl group means an alkyl chain having 1 or more and 6 or less carbons (methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, and the like).

[0280] In a case where the polymer has a plurality of repeating units, these repeating units are copolymerized. As long as not particularly limited, their copolymerization can be any one of the following: alternately copolymerized, randomly copolymerized, block copolymerized, graft copolymerized, or a case where these copolymerization forms are mixed. When a polymer or a resin is expressed by a structural formula, n or m and the like indicated together with parentheses represent the number of repetitions.

[0281] <Low solubility component>

[0282] (A) low-solubility component contains at least one of phenol novolak, polyhydroxystyrene, polystyrene, polyacrylic acid derivative, polymaleic acid derivative, polycarbonate, polyvinyl alcohol derivative, polymethacrylic acid derivative, and a copolymer thereof. Preferably, (A) low-solubility component can also contain at least one of phenol novolak, polyhydroxystyrene, polyacrylic acid derivative, polycarbonate, polymethacrylic acid derivative, and a copolymer thereof. More preferably, (A) low-solubility component can also contain at least one of phenol novolak, polyhydroxystyrene, polycarbonate, and a copolymer thereof. The phenol novolak can also be a phenol-based phenol novolak.

[0283] The protective film-forming liquid can also contain one or a combination of two or more of the above-described examples as (A) low-solubility component. For example, (A) low-solubility component can also contain both phenol novolak and polyhydroxystyrene.

[0284] One preferred aspect is that (A) low-solubility component is filmized by drying, and the film is not dissolved by the removal liquid in a large part, but is peeled off in a state of keeping the object to be removed. Further, an aspect in which a small part of (A) low-solubility component is dissolved by the removal liquid is also permitted.

[0285] Preferably, (A) low-solubility component does not contain fluorine and / or silicon, and more preferably, neither of them.

[0286] The copolymerization is preferably random copolymerization or block copolymerization.

[0287] As specific examples of (A) low-solubility component, each of the compounds represented by Chemical Formula 1 to Chemical Formula 7 below can be exemplified, but the scope of the right is not limited thereto.

[0288] [Chemical Formula 1]

[0289]

[0290] [Chemical Formula 2]

[0291]

[0292] [Chemical Formula 3]

[0293]

[0294] (Asterisk * indicates bonding with an adjacent constitutional unit)

[0295] [Chemical Formula 4]

[0296]

[0297] (R means C 1～4 Aryl group, and the like. Asterisk * indicates bonding with an adjacent constitutional unit)

[0298] [Chemical Formula 5]

[0299]

[0300] [Chemical 6]

[0301]

[0302] [Chemical 7]

[0303]

[0304] (Me means methyl. An asterisk * indicates a bond to an adjacent constitutional unit)

[0305] (A) The low-solubility component preferably has a weight average molecular weight (Mw) of 150 to 500,000, more preferably 300 to 300,000, further preferably 500 to 100,000, and further more preferably 1,000 to 50,000.

[0306] (A) The low-solubility component can be obtained by synthesis. Alternatively, it can be purchased. In the case of purchase, the following examples can be cited as suppliers. The (A) polymer can also be synthesized by the suppliers.

[0307] Phenol formaldehyde: Showa Denko K.K., Asahi Organic Chemicals Industry Co., Ltd., Kunyoh Chemical Industry Co., Ltd., Sumitomo Bakelite Co., Ltd.

[0308] Polyhydroxystyrene: Japan Carbon Co., Ltd., Maruzen Petrochemical Co., Ltd., Tobata Chemical Industry Co., Ltd.

[0309] Polyacrylic acid derivative: Japan Catalytic Co., Ltd.

[0310] Polycarbonate: Sigma-Aldrich

[0311] Polymethacrylic acid derivative: Sigma-Aldrich

[0312] The (A) low-solubility component is 0.1 to 50% by mass, preferably 0.5 to 30% by mass, more preferably 1 to 20% by mass, and further more preferably 1 to 10% by mass, relative to the total mass of the protective film-forming liquid. That is, the total mass of the protective film-forming liquid is taken as 100% by mass, and the (A) low-solubility component is 0.1 to 50% by mass, based on this. That is, "relative to" can be changed to "based on". The same applies hereinafter unless otherwise specified.

[0313] <High-solubility component>

[0314] (B) The high-solubility component is (B') a cleavage-promoting component. The (B') cleavage-promoting component contains a hydrocarbon, and also contains a hydroxyl group (-OH) and / or a carbonyl group (-C(=O)-). In the case where the (B') cleavage-promoting component is a polymer, each unit of one constituent unit contains a hydrocarbon, and also contains a hydroxyl group and / or a carbonyl group. The carbonyl group can be exemplified by a carboxylic acid (-COOH), an aldehyde, a ketone, an ester, an amide, an enone, and preferably a carboxylic acid.

[0315] When the protective film-forming liquid is dried to form a protective film on a substrate, and the protective film is peeled off with a peeling liquid, it is expected that the (B) high-solubility component creates a portion that becomes a trigger for peeling of the protective film; this is not intended to limit the scope of the invention, and is not bound by theory. Therefore, the (B) high-solubility component is preferably a component that has a higher solubility in the peeling liquid than the (A) low-solubility component. In the case where the (B') cleavage-promoting component contains a ketone as the carbonyl group, a cyclic hydrocarbon can be exemplified. As a specific example, 1,2-cyclohexanedicarboxylic acid or 1,3-cyclohexanedicarboxylic acid can be exemplified.

[0316] As a more specific aspect, the (B) high-solubility component is represented by at least any one of the following (B-1), (B-2), and (B-3). (B-1) is a compound that contains 1 to 6 of the following Chemical Formula 8 as a constituent unit (1 to 4 are preferable), and each constituent unit is bonded with a linking group (linker L1). Here, the linker L1 can be a single bond, or can be a C 1～6 alkylene group. The C 1～6 alkylene group that links the constituent units is not limited to a divalent group. A trivalent to tetravalent group is preferable. The C 1～6 alkylene group can be a straight chain, or can be a branched chain.

[0317] [Chemical 8]

[0318]

[0319] Cy1is a C 5～30 hydrocarbon ring, preferably a phenyl group, a cyclohexane group, or a naphthyl group, and more preferably a phenyl group. As a preferable aspect, the linker L1 links a plurality of Cy1.

[0320] R1is independently a C 1～5 alkyl group, preferably a methyl group, an ethyl group, a propyl group, or a butyl group. The C 1～5 alkyl group can be a straight chain, or can be a branched chain.

[0321] n b1 is 1, 2, or 3, preferably 1 or 2, and more preferably 1. n b1' is 0, 1, 2, 3, or 4, preferably 0, 1, or 2.

[0322] The following Chemical Formula 9 is a chemical formula representing the constitutional unit described in Chemical Formula 8 using a linker L9. The linker L9 is preferably a single bond, methylene, ethylene, or propylene.

[0323] [Chemical 9]

[0324]

[0325] As an example of (B-1), 2,2-bis(4-hydroxyphenyl)propane, 2,2'-methylenebis(4-methylphenol), 2,6-bis[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol, 1,3-cyclohexanediol, 4,4'-dihydroxydiphenyl, 2,6-naphthalenediol, 2,5-di-tert-butylhydroquinone, 1,1,2,2-tetrakis(4-hydroxyphenyl)ethane can be exemplified, but the scope of the invention is not intended to be limited thereto. They can also be obtained by polymerization or condensation.

[0326] As an example, 2,6-bis[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol represented by the following Chemical Formula 10 is exemplified. This compound has 3 constitutional units of Chemical Formula 8 in (B-1), and the constitutional units are bonded with a linker L1 (methylene). n b1 = n b1' = 1, and R1 is a methyl group.

[0327] [Chemical 10]

[0328]

[0329] (B-2) is represented by the following Chemical Formula 11.

[0330] [Chemical 11]

[0331]

[0332] R 21 , R 22 , R 23 , and R 24 are each independently a hydrogen or a C 1～5 alkyl group, preferably a hydrogen, a methyl group, an ethyl group, a tert-butyl group, or an isopropyl group, more preferably a hydrogen, a methyl group, or an ethyl group, and further preferably a methyl group or an ethyl group.

[0333] The linker L 21 , and the linker L 22 are each independently a C 1～20 alkylene group, a C 1～20 cycloalkylene group, a C 2～4 alkenylene group, a C 2～4 alkynylene group, or a C 6～20 arylene group. These groups can also be substituted with a C 1～5alkyl or hydroxy group. Here, the so-called alkylene group means a divalent hydrocarbon having one or more double bonds, and the so-called alkyne group means a divalent hydrocarbon group having one or more triple bonds. The linker L 21 and the linker L 22 Preferably, C 2～4 alkylene, ethyne (alkyne group of C2) or phenylene, more preferably C 2～4 alkylene or ethyne, and further preferably ethyne.

[0334] n b2 is 0, 1 or 2, preferably 0 or 1, and more preferably 0.

[0335] As an example of (B-2), 3,6-dimethyl-4-octyne-3,6-diol, 2,5-dimethyl-3-hexyne-2,5-diol can be given, but the scope of the invention is not intended to be limited thereto. As another embodiment, 3-hexyne-2,5-diol, 1,4-butynediol, 2,4-hexadiyn-1,6-diol, 1,4-butanediol, cis-1,4-dihydroxy-2-butene, 1,4-benzenedimethanol can also be given as an example of (B-2).

[0336] (B-3) is a polymer containing a constitutional unit represented by the following Chemical Formula 12, and having a weight average molecular weight (Mw) of 500 to 10,000. The Mw is preferably 600 to 5,000, and more preferably 700 to 3,000.

[0337] [Chemical 12]

[0338]

[0339] Here, R 25 is -H, -CH3or -COOH, and preferably -H or -COOH. It is also permissible that one (B-3) polymer contains two or more constitutional units each represented by Chemical Formula 12.

[0340] As an example of the (B-3) polymer, a polymer of acrylic acid, maleic acid, or a combination thereof can be given, but the scope of the invention is not intended to be limited thereto. A polyacrylic acid, a maleic acid acrylic acid copolymer is a more preferable example.

[0341] If it is a copolymer, random copolymerization or block copolymerization is preferable, and random copolymerization is more preferable.

[0342] As an example, a maleic acid acrylic acid copolymer represented by the following Chemical Formula 13 is described. This copolymer is contained in (B-3), has two constitutional units represented by Chemical Formula 12, and in one constitutional unit, R 25 is -H, and in the other constitutional unit, R 25 is -COOH.

[0343] [Chemical 13]

[0344]

[0345] Of course, the protective film-forming liquid can also contain one or a combination of two or more of the above-described examples as the (B) high-solubility component. For example, the (B) high-solubility component can also contain both 2,2-bis(4-hydroxyphenyl)propane and 3,6-dimethyl-4-octyn-3,6-diol.

[0346] The (B) high-solubility component can also have a molecular weight of 80 to 10,000. The high-solubility component preferably has a molecular weight of 90 to 5,000, and more preferably 100 to 3,000. In the case where the (B) high-solubility component is a resin, a polymer, or a polymer compound, the molecular weight is represented by the weight average molecular weight (Mw).

[0347] The (B) high-solubility component can be obtained by synthesis or by purchase. As suppliers, Sigma-Aldrich, Tokyo Chemical Industry, and Japan Catalyst can be exemplified.

[0348] In the protective film-forming liquid, the (B) high-solubility component is preferably 1 to 100% by mass, and more preferably 1 to 50% by mass, relative to the mass of the (A) low-solubility component. In the protective film-forming liquid, the (B) high-solubility component is further preferably 1 to 30% by mass, relative to the mass of the (A) low-solubility component.

[0349] < Solvent >

[0350] The (C) solvent preferably contains an organic solvent. The (C) solvent can also have volatility. By volatility, it is meant that the volatility is higher than that of water. For example, the (C) solvent preferably has a boiling point of 50 to 250°C at 1 atm. The solvent more preferably has a boiling point of 50 to 200°C at 1 atm, and further preferably 60 to 170°C at 1 atm. The solvent further more preferably has a boiling point of 70 to 150°C at 1 atm. It is also permissible for the (C) solvent to contain a small amount of pure water. The pure water contained in the (C) solvent is preferably 30% by mass or less relative to the entire (C) solvent. The pure water contained in the solvent is more preferably 20% by mass or less, and further preferably 10% by mass or less. The pure water contained in the solvent is further more preferably 5% by mass or less. It is also a preferred embodiment that the solvent does not contain pure water (0% by mass). The pure water is preferably DIW.

[0351] As the organic solvent, there can be mentioned, for example, alcohols such as isopropyl alcohol (IPA) ; glycol monoalkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether; glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME), propylene glycol monoethyl ether (PGEE) ; propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate; lactate esters such as methyl lactate, ethyl lactate (EL) ; aromatic hydrocarbons such as toluene, xylene; ketones such as methyl ethyl ketone, 2-heptanone, cyclohexanone; amides such as N,N-dimethylacetamide, N-methylpyrrolidone; lactones such as γ-butyrolactone; and the like. These organic solvents can be used singly or in combination of two or more.

[0352] As a preferred aspect, the organic solvent contained in the (C) solvent can be selected from the group consisting of IPA, PGME, PGEE, EL, PGMEA, and any combination thereof. In the case where the organic solvent is a combination of two organic solvents, the volume ratio thereof is preferably 20:80 to 80:20, more preferably 30:70 to 70:30.

[0353] The (C) solvent is 0.1 to 99.9% by mass relative to the total mass of the protective film-forming solution. The (C) solvent is preferably 50 to 99.9% by mass, more preferably 75 to 99.5% by mass, relative to the total mass of the protective film-forming solution. The (C) solvent is further preferably 80 to 99% by mass, further more preferably 85 to 99% by mass, relative to the total mass of the protective film-forming solution.

[0354] <Antiseptic Component>

[0355] As the (D) antiseptic component, in addition to BTA, there can be mentioned, for example, uric acid, caffeine, pterin, adenine, glyoxylic acid, glucose, fructose, mannose, and the like.

[0356] <Other Additive>

[0357] The protective film-forming solution of the present application can further contain an (E) other additive. As an aspect of the present application, the (E) other additive contains a surfactant, an acid, a base, an antibacterial agent, a bactericidal agent, an antiseptic agent, or an antifungal agent (preferably a surfactant), and can include any combination thereof.

[0358] As an aspect of the present application, the (D) other additive (sum of them, if plural) is 0 to 100% by mass (preferably 0 to 10% by mass, more preferably 0 to 5% by mass, further preferably 0 to 3% by mass, further more preferably 0 to 1% by mass) relative to the mass of the (A) low-solubility component in the protective film-forming solution. It is also an aspect of the present application that the protective film-forming solution contains no (E) other additive (0% by mass).

[0359] <Other Embodiments>

[0360] The present application is not limited to the above-described embodiments, and can be further implemented in other ways.

[0361] For example, Figure 1A and Figure 13A Examples are shown in which the control device 3 is provided in the substrate processing device 2, 2Q, but the control device 3 can also be provided independently of the substrate processing device 2, 2Q.

[0362] In addition, in the film coating and removing device 4A of the above-described embodiments, the protective film forming liquid and the removing liquid are ejected from the moving nozzle 9, and the rinsing liquid is ejected from the fixed nozzle 10. However, these liquids do not necessarily have to be ejected from the nozzles provided in the above-described embodiments, and the form of the nozzles that eject each liquid is not limited. For example, it can also be configured so that the same removing liquid is ejected from the ejection port of the central nozzle 11.

[0363] In addition, in the first and second embodiments, the coating and removal of the protective film 200 is performed by the film coating and removing device 4A. However, the removal of the protective film 200 by the removing liquid, the rinsing of the protective target surface Wl of the substrate W, and the removal of the residue from the protective target surface Wl can also be performed by a liquid processing device 4 that is different from the one that performs the coating of the protective film 200. In detail, it can also be performed by a film removing device that cannot perform the coating of the protective film 200, and that can supply the removing liquid, the rinsing liquid, and the residue removing liquid to the substrate W. The film removing device is provided with a rotary chuck that is configured in the same manner as the first rotary chuck 6A or the second rotary chuck 6B. The rotary chuck (third substrate holding unit) has a third base that faces the substrate W from the lower side, and holds the substrate W horizontally.

[0364] In addition, in the example of the substrate processing of the third embodiment, the first flipping process is performed by the flipping unit 5A, and the second flipping process is performed by the flipping unit 5B. However, the first flipping process and the second flipping process can also be performed by either flipping unit.

[0365] In addition, in the first and second embodiments, the first flipping process and the second flipping process are performed by a single flipping unit 5. However, a plurality of flipping units 5 can also be provided, and the first flipping process and the second flipping process can be performed by each flipping unit 5.

[0366] In addition, in each of the above-described embodiments, the spray cleaning or the brush cleaning, or the like, is performed on the cleaning target surface W2. However, the cleaning target surface W2 does not necessarily have to be cleaned by the physical cleaning, and can also be cleaned by supplying the cleaning liquid in a continuous stream.

[0367] The protective film-forming liquid is not limited to the above. For example, a resist film-forming liquid or an antireflection film-forming liquid can be used as the protective film-forming liquid. In this case, a developing liquid can be used as the removing liquid.

[0368] The antireflection film-forming liquid contains a solvent and a solute. The solute contained in the antireflection film-forming liquid includes, for example, an antireflection film-forming polymer having an anthracene skeleton having a hydrophilic group. The polymer having an anthracene skeleton is a copolymer of at least one monomer selected from the group consisting of acrylic acid, methacrylic acid, vinyl alcohol, vinylpyrrolidone, acrylate, and methacrylate, and a monomer having an anthracene skeleton. The solvent contained in the antireflection film-forming liquid is, for example, an organic solvent or water. The solute contained in the antireflection film-forming liquid can also be a fluororesin.

[0369] The organic solvent used as the solvent can be arbitrarily selected from the following materials according to the purpose: (a) hydrocarbons such as n-hexane, n-octane, cyclohexane, and the like; (b) alcohols such as methanol, ethanol, isopropanol, and the like; (c) ketones such as acetone, methyl ethyl ketone, and the like; and (d) esters such as methyl acetate, ethyl acetate, ethyl lactate, and the like; (e) ethers such as diethyl ether, dibutyl ether, and the like, (f) other polar solvents such as dimethylformamide, dimethyl sulfoxide, methyl cellosolve, cellosolve, butyl cellosolve, cellosolve acetate, alkyl cellosolve acetate, butyl carbitol, carbitol acetate, and the like.

[0370] The resist film-forming liquid contains a solvent and, as a solute dissolved in the solvent, a resist composition. As the resist composition constituting the resist film, a positive resist composition, a negative composition, and the like can be used. As the positive resist composition, for example, a resist composition containing a quinonediazide-based photosensitizer and an alkali-soluble resin; a chemically amplified resist composition; and the like can be exemplified.

[0371] As the negative resist composition, for example, a resist composition containing a polyvinyl cinnamate or the like having a photosensitive group; a resist composition containing an aromatic azide compound, or a resist composition containing an azide compound such as a cyclized rubber and a bis-azide compound; a resist composition containing a diazo resin; a photopolymerizable composition containing an additional polymerizable unsaturated compound; a chemically amplified negative resist composition; and the like can be exemplified.

[0372] Here, as examples of the quinonediazide-based photosensitizer used in the positive resist composition containing a quinonediazide-based photosensitizer and an alkali-soluble resin, 1,2-benzoquinone diazide-4-sulfonic acid, 1,2-naphthoquinone diazide-4-sulfonic acid, 1,2-naphthoquinone diazide-5-sulfonic acid, esters or amides of these sulfonic acids, and the like can be given. In addition, as examples of the alkali-soluble resin, phenol-formaldehyde resins, polyvinyl phenol, polyvinyl alcohol, copolymers of acrylic acid or methacrylic acid, and the like can be given. As a preferred phenol-formaldehyde resin, one or two or more kinds of phenols such as phenol, o-cresol, m-cresol, p-cresol, xylenol, and one or more kinds of aldehydes such as formaldehyde, paraformaldehyde, and the like can be given.

[0373] In addition, either of a positive type and a negative type can be used for the chemically amplified resist composition. The chemically amplified resist is one which generates an acid by irradiation of a radiation, and by the catalytic action of the acid, a chemical change is realized, whereby the solubility in a developing solution of the portion irradiated with the radiation is changed, and a pattern is formed. Examples of the chemically amplified resist include: one composed of an acid-generating compound which generates an acid by irradiation of a radiation, and a resin containing an acid-sensitive group which generates an alkali-soluble group such as a phenolic hydroxyl group or a carboxyl group by decomposition in the presence of the acid; and one composed of an alkali-soluble resin, a crosslinking agent, and an acid generator.

[0374] In addition, a liquid containing a water-soluble polymer which forms a water-soluble film by evaporation of a solvent can also be used as the protective film forming liquid.

[0375] The water-soluble polymer contains, for example, at least any one of: cellulose-based polymers such as hydroxypropyl methylcellulose phthalate, hydroxypropyl methylcellulose acetate phthalate, hydroxypropyl methylcellulose acetate succinate, hydroxypropyl methylcellulose hexahydrophthalate, hydroxypropyl methylcellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, cellulose acetate hexahydrophthalate, carboxymethyl cellulose, ethyl cellulose, methyl cellulose, and the like; acrylic-based polymers such as N,N-dimethylacrylamide, dimethylaminopropyl methacrylamide, N,N-dimethylaminopropyl acrylamide, N-methylacrylamide, diacetone acrylamide, dimethylaminoethyl methacrylate, diethylaminoethyl methacrylate, N,N-dimethylaminoethyl acrylate, acryloyl morpholine, acrylic acid, and the like; and vinyl-based polymers such as polyvinyl alcohol, polyvinyl pyrrolidone, and the like. Only one of these water-soluble polymers can be used, or two or more kinds thereof can be used in combination.

[0376] When a water-soluble film is used as the protective film, the protective film is dissolved in the removal liquid and removed from the substrate W by using DIW as the removal liquid (dissolution removal process). In this case, the supply of rinsing liquid can be omitted. Even if, as in the first and second embodiments, the protective film is composed of low-soluble solids and high-soluble solids, the supply of rinsing liquid can be omitted when using DIW as the removal liquid.

[0377] In this instruction manual, when “~” or “-” is used to indicate a numerical range, unless otherwise specified, the values ​​at both ends of these two symbols are included, and the units are the same. For example, 5 to 25 mol% means more than 5 mol% and less than 25 mol%.

[0378] Furthermore, while expressions such as "along," "horizontal," and "vertical" are used in the described embodiments, they do not need to be strictly "along," "horizontal," or "vertical." That is, each of these expressions allows for any one of the following: manufacturing precision, setting precision, etc.

[0379] The embodiments of the present invention have been described in detail above, but they are merely specific examples used to clarify the technical content of the present invention. The present invention should not be limited to these specific examples, and the scope of the present invention is limited only by the appended claims.

Claims

1. A substrate processing system comprising: a first substrate holding unit including a first base facing a substrate from a lower side with a protection target surface and a cleaning target surface on an opposite side of the protection target surface, and holding the substrate in a first posture with the protection target surface facing an upper side; a protective film coating nozzle coating a protective film at least on a peripheral portion of the protection target surface of the substrate held by the first substrate holding unit; a first turning unit contacting the peripheral portion of the substrate and turning the substrate in a state where the protective film is coated, so that the posture of the substrate changes from the first posture to a second posture with the protection target surface facing a lower side; a second substrate holding unit including a second base facing the substrate from the lower side, and holding the substrate in the second posture; a cleaning unit cleaning the cleaning target surface of the substrate held by the second substrate holding unit; a second turning unit contacting the peripheral portion of the substrate and turning the substrate, so that the posture of the substrate changes from the second posture to the first posture; a third substrate holding unit including a third base facing the substrate from the lower side, and holding the substrate in the first posture; and a removal liquid nozzle supplying a removal liquid for removing the protective film from the protection target surface to the protection target surface of the substrate held by the third substrate holding unit.

2. A substrate processing system comprising: a first substrate holding unit including a first base facing a substrate from a lower side with a protection target surface and a cleaning target surface on an opposite side of the protection target surface, and holding the substrate in a first posture with the protection target surface facing an upper side; a protective film coating nozzle coating a protective film at least on a peripheral portion of the protection target surface of the substrate held by the first substrate holding unit; a first turning unit contacting the peripheral portion of the substrate and turning the substrate in a state where the protective film is coated, so that the posture of the substrate changes from the first posture to a second posture with the protection target surface facing a lower side; a second substrate holding unit including a second base facing the substrate from the lower side, and holding the substrate in the second posture; a cleaning unit cleaning the cleaning target surface of the substrate held by the second substrate holding unit; a second turning unit contacting the peripheral portion of the substrate and turning the substrate, so that the posture of the substrate changes from the second posture to the first posture; a third substrate holding unit including a third base facing the substrate from the lower side, and holding the substrate in the first posture; and a dry removal unit removing the protective film from the protection target surface of the substrate held by the third substrate holding unit by performing a plasma treatment or a light irradiation treatment on the protection target surface.

3. The substrate processing system according to claim 1 or 2, wherein the first substrate holding unit includes a first adsorption holding unit adsorbing a central portion of the cleaning target surface to the first base, and holding the substrate. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 4. The substrate processing system according to claim 1 or 2, wherein the second substrate holding unit includes a plurality of chuck pins supported on the second base, which are in contact with a peripheral portion of the protection target surface of the substrate.

5. The substrate processing system according to claim 1 or 2, wherein the protective film coating nozzle is configured to coat the protective film on the entire protection target surface of the substrate, the second substrate holding unit includes a second adsorption holding unit that holds the substrate by adsorbing a central portion of the protection target surface to the second base.

6. The substrate processing system according to claim 1 or 2, wherein the cleaning unit includes a spray nozzle that performs spray cleaning on the cleaning target surface by spraying droplets of cleaning liquid toward the cleaning target surface.

7. The substrate processing system according to claim 1 or 2, wherein the cleaning unit includes a cleaning member that is in contact with the cleaning target surface of the substrate to scrub the cleaning target surface.

8. The substrate processing system according to claim 1 or 2, wherein the first substrate holding unit functions as the third substrate holding unit.

9. The substrate processing system according to claim 1 or 2, further comprising a gas supply unit that supplies gas to a space between the protection target surface of the substrate held by the second substrate holding unit and the second base.

10. The substrate processing system according to claim 1 or 2, further comprising: a container placement member that places a container that accommodates the substrate in the first attitude; and a conveyance unit having a robot that is in contact with a peripheral portion of a face of the cleaning target surface and the protection target surface of the substrate that faces downward, and that conveys the substrate between the container placement member, the first substrate holding unit, the first turnover unit, and the second substrate holding unit.

11. A substrate processing method comprising: a first substrate holding process of holding a substrate having a protection target surface and a cleaning target surface on a side opposite to the protection target surface in a first attitude in which the protection target surface faces upward, at a first holding position that faces a first base from an upper side; a protective film coating process of coating a protective film on at least a peripheral portion of the protection target surface of the substrate held in the first attitude at the first holding position by the first substrate holding process; a first turnover process of turning over the substrate in a state in which the protective film is coated, by bringing a first turnover unit into contact with a peripheral portion of the substrate after the protective film coating process, so that the attitude of the substrate changes from the first attitude to a second attitude in which the protection target surface faces downward; a second substrate holding process of holding the substrate whose attitude is changed to the second attitude by the first turnover process, at a second holding position that faces a second base from the upper side; a cleaning process of performing cleaning on the cleaning target surface of the substrate held in the second attitude at the second holding position by the second substrate holding process; a second substrate holding step of holding the substrate whose posture is changed to the first posture by the second turning step in a third holding position facing a third pedestal from the upper side; and a third substrate holding step of holding the substrate whose posture is changed to the first posture by the second turning step in a third holding position facing a third pedestal from the upper side; and a protective film removing step of supplying a removing liquid to the substrate held in the first holding position in the first posture by the third substrate holding step, thereby removing the protective film.

12. A substrate processing method comprising: a first substrate holding step of holding a substrate having a protection target surface and a cleaning target surface on the opposite side of the protection target surface in a first posture in which the protection target surface faces the upper side in a first holding position facing a first pedestal from the upper side; a protective film coating step of coating a protective film at least on a peripheral portion of the protection target surface of the substrate held in the first holding position in the first posture by the first substrate holding step; a first turning step of making a first turning unit contact a peripheral portion of the substrate in a state in which the protective film is coated and turning the substrate, thereby changing the posture of the substrate from the first posture to a second posture in which the protection target surface faces the lower side; a second substrate holding step of holding the substrate whose posture is changed to the second posture by the first turning step in a second holding position facing a second pedestal from the upper side; a cleaning step of performing cleaning on the cleaning target surface of the substrate held in the second holding position in the second posture by the second substrate holding step; a second turning step of making a second turning unit contact a peripheral portion of the substrate after the cleaning step and turning the substrate, thereby changing the posture of the substrate from the second posture to the first posture; a third substrate holding step of holding the substrate whose posture is changed to the first posture by the second turning step in a third holding position facing a third pedestal from the upper side; and a protective film removing step of performing plasma processing or light irradiation processing on the substrate held in the third holding position in the first posture by the third substrate holding step, thereby removing the protective film from the protection target surface.

Images