Substrate processing apparatus and substrate processing method

Abstract

This invention relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a rotating chuck for holding a substrate; and a fluid nozzle disposed facing the main surface of the substrate held in the rotating chuck. The fluid nozzle includes: a gas outlet for radially ejecting gas from a central side of the main surface of the substrate toward a peripheral side; and a gas flow path for supplying gas to the gas outlet and having a cylindrical shape in a direction intersecting the main surface of the substrate. The gas flow path includes: a gas storage section having a flow path cross-sectional area larger than other portions of the gas flow path; and a rectification structure disposed in a portion of the gas flow path different from the gas storage section to rectify the airflow within the gas flow path.

Description

[0001] Related applications

[0002] This application corresponds to Japan Patent Application No. 2020-219432 filed with the Japan Patent Office on December 28, 2020, all disclosures of which are incorporated herein by reference. Technical Field

[0003] This invention relates to a substrate processing apparatus and a substrate processing method for processing substrates. The substrates to be processed include, for example, substrates for FPD (Flat Panel Display) devices such as semiconductor wafers, liquid crystal display devices and organic EL (Electroluminescence) display devices, substrates for optical discs, substrates for magnetic disks, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, substrates for solar cells, etc. Background Technology

[0004] U.S. Patent Application Publication No. 2016 / 0214148 discloses an inert airflow that forms from the center of a substrate toward the periphery and is parallel to the upper surface of the substrate. The inert airflow covers the upper surface of the substrate, thereby suppressing or preventing droplets and water vapor from adhering to the upper surface of the substrate. Summary of the Invention

[0005] In order to effectively suppress the adhesion of processing liquid droplets and water vapor to the upper surface of the substrate, it is necessary to improve the diffusion uniformity of the gas ejected from the nozzle and from the center side to the periphery of the upper surface of the substrate. Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can improve the uniformity of gas diffusion in a configuration in which gas is ejected radially from a gas nozzle.

[0006] One aspect of the present invention provides a substrate processing apparatus comprising: a rotating chuck for holding a substrate; and a fluid nozzle disposed facing the main surface of the substrate held in the rotating chuck. The fluid nozzle includes: a gas outlet for radially ejecting gas from a center side of the main surface of the substrate toward a peripheral side; and a gas flow path for supplying gas to the gas outlet and having a cylindrical shape along a direction intersecting the main surface of the substrate. Furthermore, the gas flow path includes: a gas storage section having a flow path cross-sectional area larger than other portions of the gas flow path; and a rectification structure disposed in a portion of the gas flow path different from the gas storage section to rectify the airflow within the gas flow path.

[0007] According to the aforementioned configuration, since a gas storage section with a larger cross-sectional area than other parts of the gas flow path is provided in the gas flow path, the gas supplied to the gas storage section is dispersed within the gas storage section. Therefore, by reducing the flow rate of the gas supplied to the gas storage section, the velocity difference of the gas at various locations along the circumference of the gas flow path is reduced. Furthermore, the gas within the gas flow path is rectified by a rectifying structure provided in a portion of the gas flow path different from the gas storage section. This adjusts the movement direction of the gas within the gas flow path towards the gas ejection outlet, reducing the circumferential component of the gas velocity within the gas flow path. Therefore, the diffusion uniformity of the gas ejected from the gas ejection outlet and from the center side to the periphery of the substrate's main surface can be improved. As a result, the main surface of the substrate can be well protected by the gas radially ejected from the gas ejection outlet.

[0008] In one aspect of the invention, the fluid nozzle includes: a plurality of gas outlets and a plurality of gas flow paths that respectively guide gas to the plurality of gas outlets. Furthermore, the plurality of gas outlets have: a first gas outlet; and a second gas outlet disposed at a position further away from the main surface of the substrate than the first gas outlet in the intersecting direction.

[0009] According to the configuration described above, in addition to the first gas outlet, gas is also ejected from a second gas outlet located further away from the main surface of the substrate than the first gas outlet, thus thickening the gas layer from the center side of the main surface of the substrate toward the periphery. Therefore, the main surface of the substrate can be protected more effectively.

[0010] In one aspect of the invention, the width of the second gas outlet in the intersecting direction is narrower than the width of the first gas outlet in the intersecting direction.

[0011] As air enters the gas flow path from the gas outlet, oxygen and water vapor may sometimes mix into the gas ejected from the gas outlet. This mixing of oxygen and water vapor into the gas ejected from the gas outlet raises concerns about an increase in oxygen concentration and humidity in the atmosphere near the substrate's main surface.

[0012] If a second gas outlet (gas outlet 2) is located further away from the substrate than the first gas outlet (gas outlet 1), the gas ejected from the second gas outlet (gas outlet 2), which is relatively far from the substrate's main surface, will suppress air from entering the gas outlet (gas outlet 1), which is relatively close to the substrate's main surface. On the other hand, since no second gas outlet is located further away from the substrate's main surface than the second gas outlet (gas outlet 2), there is no airflow to suppress air from entering the second gas outlet (gas outlet 2). Therefore, by making the width of the second gas outlet in the intersecting direction narrower than the width of the first gas outlet in the intersecting direction, air entry into the second gas outlet can be suppressed. This, in turn, suppresses the increase in oxygen concentration in the atmosphere near the substrate's main surface. Consequently, the substrate's main surface can be protected more effectively.

[0013] In one aspect of the invention, the width of the second gas outlet in the intersecting direction is wider than the width of the first gas outlet in the intersecting direction.

[0014] When the gas pressure near the main surface of the substrate is relatively low, the gas ejected from the first gas ejector, which is relatively close to the main surface of the substrate, is attracted to the main surface of the substrate in the cross direction, which may reduce the diffusion uniformity of the gas ejected from the first gas ejector.

[0015] Therefore, by making the width of the first gas outlet narrower than the width of the second gas outlet, the linear velocity of the gas ejected from the first gas outlet can be increased, thus suppressing the attraction of the gas ejected from the first gas outlet to the main surface of the substrate. This improves the diffusion uniformity of the gas ejected from the gas outlet and from the center side of the main surface of the substrate toward the periphery.

[0016] In one aspect of the invention, a plurality of first shielding portions are provided spaced apart from each other in the circumferential direction of the gas flow path, and the shielding gas moves downstream of the gas flow path.

[0017] According to the configuration described above, the shielding gas moves downstream of the gas flow path by a plurality of first shielding portions arranged circumferentially spaced apart. Therefore, when two adjacent first shielding portions pass between each other, the circumferential component of the gas flow velocity is reduced. This allows the ejection direction of the gas ejected from the gas outlet to be closer to the radial direction of the gas flow path, thus further improving the diffusion uniformity of the gas from the center side of the substrate main surface towards the peripheral side.

[0018] In one aspect of the invention, the rectifying structure further includes a plurality of second shielding portions disposed downstream of the gas flow path than the plurality of first shielding portions, thereby shielding the gas as it moves downstream of the gas flow path. Furthermore, the positions of the plurality of second shielding portions in the circumferential direction are offset relative to the positions of the plurality of first shielding portions in the circumferential direction.

[0019] By using multiple first shielding portions, the circumferential component of the gas flow velocity between two adjacent first shielding portions in the circumferential direction is reduced. On the other hand, the gas flow rate at the same circumferential position as the first shielding portion is reduced downstream of the multiple first shielding portions in the gas flow path. Therefore, if the circumferential position of the multiple second shielding portions, which shield the gas moving downstream of the gas flow path, is offset relative to the circumferential position of the multiple first shielding portions, further downstream of the multiple first shielding portions, the gas flow rate at the same circumferential position as the second shielding portion can be reduced, thereby improving the uniformity of the gas flow rate at each circumferential position. As a result, the uniformity of gas diffusion from the center side to the periphery of the substrate main surface can be further improved.

[0020] Furthermore, in addition to the first shielding section, multiple second shielding sections can further reduce the circumferential component of the gas velocity. In other words, the circumferential component of the gas velocity can be reduced in two stages. This allows the ejection direction of the gas exiting the gas nozzle to be further aligned with the radial direction of the gas flow path.

[0021] In one aspect of the invention, the gas flow path further comprises: a straight flow path extending linearly in the intersecting direction, and a curved flow path in which the middle portion of the straight flow path is bent. By bending the straight flow path in its middle portion, the gas flow velocity is reduced, thereby reducing the gas flow velocity difference at various positions in the circumferential direction of the gas flow path. Furthermore, a flow-rectifying structure may be provided in the curved flow path.

[0022] In one aspect of the invention, the fluid nozzle further includes a nozzle body having a counter surface facing the main surface of the substrate, and a side surface connected to the counter surface and the gas outlet opening therein, wherein the gas flow path is formed.

[0023] According to the substrate processing apparatus, a gas ejector is formed in the nozzle body on a cylindrical side surface connected to the opposing surface facing the main surface of the substrate. Therefore, gas can easily diffuse radially from the gas ejector.

[0024] In one aspect of the invention, the fluid nozzle further includes a central gas outlet that ejects gas toward the center of the main surface of the substrate. Furthermore, on the opposite surface of the fluid nozzle, a frustoconical recess is formed that is recessed in a direction away from the main surface of the substrate, and the central gas outlet is located within the recess.

[0025] According to the aforementioned configuration, since the central gas outlet is located within the recess, the gas ejected from the central gas outlet toward the center of the substrate's main surface diffuses within the recess. Because the recess is formed in a frustum-shaped cone, gas can diffuse evenly from the entire periphery of the recess toward the outer side of the recess. This improves the uniformity of gas diffusion from the center side of the substrate's main surface toward the periphery.

[0026] In one aspect of the invention, the fluid nozzle further includes a processing liquid outlet located within the recess, which sprays the processing liquid toward the main surface of the substrate. Therefore, by simultaneously spraying the processing liquid from the processing liquid outlet onto the main surface of the substrate and spraying gas from the gas outlet, the processing liquid on the main surface of the substrate can be protected from the influence of the external atmosphere, and the gas outlet opens from the side of the fluid nozzle. For example, it can suppress the dissolution of oxygen and water vapor contained in the external atmosphere into the processing liquid on the main surface of the substrate.

[0027] Furthermore, by ejecting gas from the central gas outlet, the processing liquid is pushed towards the periphery of the substrate and can be discharged from the periphery. Since the gas ejected from the central gas outlet diffuses uniformly from the periphery of the recess to the outside of the recess, the processing liquid can be effectively removed from the main surface of the substrate.

[0028] In one aspect of the invention, the nozzle body includes a plurality of flow path demarcation members, each having a surface that demarcates the gas flow path. According to this configuration, the gas flow path is demarcated by the surfaces of the flow path demarcation members. Therefore, compared to a configuration where the gas flow path is formed within a single component, it is easier to form the gas flow path.

[0029] In one aspect of the invention, the substrate processing apparatus further includes a gas piping connected to the fluid nozzle to supply gas to the gas flow path from a direction parallel to the main surface of the substrate.

[0030] Therefore, the gas supplied to the gas flow path from a direction parallel to the main surface of the substrate circumferentially swirls within the gas flow path. Since a rectifying structure is provided in the portion of the gas flow path that differs from the gas storage section, the gas within the gas flow path is rectified. This improves the uniformity of gas diffusion from the center side of the main surface of the substrate towards the periphery.

[0031] Another aspect of the present invention provides a substrate processing method, comprising: a substrate holding step, holding the substrate; a processing liquid supply step, supplying processing liquid to the upper surface of the substrate; and an airflow forming step, wherein, at least after the processing liquid supply step begins, gas is ejected from a gas outlet of a fluid nozzle to form a radial airflow from the center side to the peripheral side of the upper surface of the substrate, and the fluid nozzle has: a gas outlet for ejecting gas and a gas flow path for supplying gas to the gas outlet; and the gas flow path is provided with: a gas storage section with a flow path cross-sectional area larger than other parts of the gas flow path, and a rectifying structure provided in the gas flow path at a portion different from the gas storage section, and rectifying the airflow within the gas flow path.

[0032] According to the aforementioned configuration, it achieves the same effect as the substrate processing apparatus.

[0033] The objects, features, and effects of the present invention will become clear from the following description of embodiments with reference to the accompanying drawings. Attached Figure Description

[0034] Figure 1 This is a top view used to illustrate the configuration of the substrate processing apparatus according to the first embodiment of the present invention.

[0035] Figure 2 This is a schematic cross-sectional view used to illustrate an example of the configuration of a processing unit equipped in the substrate processing apparatus.

[0036] Figure 3 This is a schematic top view of the fluid nozzles equipped in the processing unit.

[0037] Figure 4 It is along Figure 3 The cross-sectional view of line IV-IV shown.

[0038] Figure 5 yes Figure 4 An enlarged view of region V shown.

[0039] Figure 6 It is along Figure 4 The sectional view of line VI-VI shown.

[0040] Figure 7 It is along Figure 4 The sectional view along line VII-VII shown.

[0041] Figure 8 It is along Figure 4 The cross-sectional view of line VIII-VIII shown.

[0042] Figure 9 It is along Figure 4 The cross-sectional view of the IX-IX line shown.

[0043] Figure 10 This is a block diagram illustrating the electrical configuration of the substrate processing apparatus.

[0044] Figure 11 It is a flowchart used to illustrate the specific substrate processing process of the substrate processing apparatus.

[0045] Figures 12A-12D This is a sectional view used to illustrate the condition of a low surface tension liquid treatment performed during the substrate processing.

[0046] Figure 13 This is a cross-sectional view used to illustrate a first variation of the rectification structure of the first embodiment.

[0047] Figure 14This is a schematic diagram illustrating a second variation of the rectification structure of the first embodiment.

[0048] Figure 15 It is along Figure 14 The cross-sectional view of the XV-XV line shown.

[0049] Figure 16 This is a schematic diagram illustrating a third variation of the rectification structure of the first embodiment.

[0050] Figure 17 This is a schematic diagram illustrating a fourth variation of the rectification structure of the first embodiment.

[0051] Figure 18 This is a cross-sectional view of the fluid nozzles provided in the substrate processing apparatus of the second embodiment.

[0052] Figure 19 yes Figure 18 A magnified view of the XIX region shown.

[0053] Figure 20 This is a cross-sectional view of a fluid nozzle provided in a substrate processing apparatus according to the third embodiment.

[0054] Figure 21 yes Figure 20 An enlarged view of the XXI region shown.

[0055] Figure 22 This is a cross-sectional view of a fluid nozzle provided in a substrate processing apparatus according to the third embodiment.

[0056] Figure 23 yes Figure 22 An enlarged view of region XXIII shown.

[0057] Figure 24 This is an enlarged view of the cross-section of a fluid nozzle in a variation example, showing multiple side gas outlets and their surroundings. Detailed Implementation

[0058] <Composition of Substrate Processing Device>

[0059] Figure 1 This is a top view used to illustrate the configuration of the substrate processing apparatus 1 according to the first embodiment of the present invention.

[0060] The substrate processing apparatus 1 is a monolithic device for processing substrates W, such as silicon wafers, one wafer at a time. In this embodiment, the substrate W is a circular plate-shaped substrate. The substrate processing apparatus 1 includes: multiple processing units 2 for processing the substrate W with a processing solution; a loading port LP for holding a carrier CA that houses the multiple substrates W processed by the processing units 2; transfer robots IR and CR for transferring the substrates W between the loading port LP and the processing units 2; and a controller 3 for controlling the substrate processing apparatus 1. The transfer robot IR transfers the substrate W between the carrier CA and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing units 2. The multiple processing units 2, for example, have the same configuration.

[0061] In processing unit 2, substrate W has a pair of main surfaces, which are processed with either main surface facing upwards. At least one of the main surfaces is a device surface with a circuit pattern formed on it. One of the main surfaces may also be a non-device surface without a circuit pattern formed on it.

[0062] The circuit pattern can be, for example, a line pattern formed by tiny trenches, or it can be formed by setting multiple micro-holes (gaps or apertures).

[0063] Figure 2 This is an anatomical view illustrating an example of the configuration of processing unit 2. Processing unit 2 includes: a rotating chuck 5 that holds a substrate W in a horizontal position while rotating the substrate W about a vertical rotation axis A1 passing through the center of the substrate W; a heater unit 6 that heats the substrate W from the lower surface (the main surface on the lower side); a cylindrical processing cup 7 surrounding the rotating chuck 5; a chemical nozzle 9 that supplies a chemical solution such as hydrofluoric acid to the upper surface of the substrate W; a cleaning fluid nozzle 10 that supplies a cleaning fluid such as deionized water (DIW) to the upper surface (the main surface on the upper side) of the substrate W; a lower surface nozzle 11 that supplies a processing fluid to the lower surface of the substrate W; and a fluid nozzle 12 that supplies a gas such as nitrogen (N2) and a low surface tension liquid such as IPA (isopropyl alcohol) to the upper surface of the substrate W. The low surface tension liquid is a liquid with a surface tension lower than that of the cleaning fluid such as DIW.

[0064] Processing unit 2 also includes a chamber 13 for containing processing cup 7 (see reference). Figure 1 Although not shown in the figure, the chamber 13 forms an inlet / outlet for loading / unloading the substrate W, and includes a baffle unit for opening and closing the inlet / outlet.

[0065] The rotating chuck 5 holds the substrate W in a specific holding position while rotating the substrate W. Specifically, the rotating chuck 5 includes: multiple chuck pins 20 for holding the substrate W; a rotating base 21 for supporting the multiple chuck pins 20; a rotating shaft 22 connected to the center of the lower surface of the rotating base 21; and a rotating motor 23 for applying rotational force to the rotating shaft 22.

[0066] The rotating shaft 22 extends vertically along the rotation axis A1 and is a hollow shaft in this embodiment. The rotating base 21 has a disk shape in the horizontal direction and is connected to the upper end of the rotating shaft 22. Multiple clamping pins 20 are arranged circumferentially on the periphery of the upper surface of the rotating base 21 with spacing between them. The multiple clamping pins 20 can move between a closed position where they contact the periphery of the substrate W and hold the substrate W in place, and an open position where they retract from the periphery of the substrate W. When the multiple clamping pins 20 are in the open position, they contact the lower surface of the periphery of the substrate W and support the substrate W from below.

[0067] Multiple chuck pins 20 are opened and closed by a chuck pin drive unit 25. The chuck pin drive unit 25 includes, for example, a linkage mechanism 26 built into the rotating base 21 and a drive source 27 disposed outside the rotating base 21. The drive source 27 includes, for example, a ball screw mechanism and an electric motor that applies driving force thereto.

[0068] The heater unit 6 has the shape of a circular heating plate. The heater unit 6 is disposed between the upper surface of the rotating base 21 and the lower surface of the substrate W.

[0069] The heater unit 6 includes a plate body 60 and a heater 61. The plate body 60 is slightly smaller than the substrate W when viewed from above. The upper surface of the plate body 60 forms a heating surface 6a. The heater 61 may be a resistor built into the plate body 60. The heating surface 6a is heated by energizing the heater 61.

[0070] A lifting shaft 62, extending vertically along the rotation axis A1, is connected to the lower surface of the heater unit 6. The lifting shaft 62 is inserted into a through hole 21a formed in the center of the rotating base 21 and a hollow rotating shaft 22. A power supply line 63 passes through the lifting shaft 62.

[0071] Power is supplied to heater 61 from heater energizing unit 64 via power supply line 63. Heater energizing unit 64 is, for example, a power source. Heater unit 61 is raised and lowered via heater lifting unit 65.

[0072] The heater lifting unit 65 may include, for example, an actuator (not shown) such as an electric motor or cylinder that drives the lifting shaft 62 to lift. The heater lifting unit 65 may also be referred to as a heater lift.

[0073] The heater lifting unit 65 raises and lowers the heater unit 6 via the lifting shaft 62. The heater unit 6, raised and lowered by the heater lifting unit 65, can be positioned in both a lower and upper position. The heater lifting unit 65 can not only position the heater unit 6 in the lower and upper positions, but also position it in any position between the lower and upper positions.

[0074] When the heater unit 6 rises, it can receive the substrate W from the multiple clamping pins 20 located in the open position. The heater unit 6 is positioned, via the heater lifting unit 65, at a contact position that contacts the lower surface of the substrate W, or at a proximity position that is close to the lower surface of the substrate W without contact, thereby heating the substrate W using radiant heat from the heating surface 6a. By positioning the heater unit 6 in the contact position, the substrate W can be heated with greater heat through heat conduction from the heating surface 6a.

[0075] The processing cup 7 receives liquid that splashes from the substrate W held in the rotating chuck 5. The processing cup 7 includes: a plurality of protective members 30 for catching liquid splashing outwards from the substrate W held in the rotating chuck 5; a plurality of cups 31 for catching liquid guided downwards by the plurality of protective members 30; and a cylindrical outer wall member 32 surrounding the plurality of protective members 30 and the plurality of cups 31. In this embodiment, an example is shown where two protective members 30 and two cups 31 are provided.

[0076] Each protective element 30 has a generally cylindrical shape. The upper end of each protective element 30 is inclined inward toward the rotating base 21. A plurality of cups 31 are respectively disposed below the plurality of protective elements 30. The cups 31 form annular receiving grooves to receive the processing liquid guided downward by the protective elements 30.

[0077] Each protective component 30 is individually raised and lowered via the protective component lifting unit 33. The protective component lifting unit 33 allows each protective component 30 to be positioned at any position from the upper to the lower position. Figure 2 This indicates that both protective components 30 are positioned in the lower position. The upper position is when the upper end of the protective component 30 is positioned above the holding position of the substrate W held by the rotating chuck 5. The lower position is when the upper end of the protective component 30 is positioned below the holding position.

[0078] The protective component lifting unit 33 includes, for example, a plurality of ball screw mechanisms (not shown) respectively connected to a plurality of protective components 30; and a plurality of motors (not shown) that apply driving force to each ball screw mechanism. The protective component lifting unit 33 is also referred to as a protective component lift.

[0079] When liquid is supplied to the rotating substrate W, at least one protective member 30 is positioned in the upper position. If liquid is supplied to the substrate W in this state, the liquid is thrown outwards from the substrate W. The thrown liquid collides with the inner surface of the protective member 30, which is horizontally opposed to the substrate W, and is guided to the cup 31 corresponding to the protective member 30. During the loading and unloading of the substrate W, a transport robot CR (see reference) is used. Figure 1 When accessing the rotating chuck 5, all protective components 30 are in the lower position.

[0080] In this embodiment, the liquid nozzle 9 is a movable nozzle capable of moving in the horizontal direction. The liquid nozzle 9 moves horizontally via the first nozzle moving unit 35. In the horizontal direction, the liquid nozzle 9 can move between a center position and a starting position (retreat position). When the liquid nozzle 9 is in the center position, it faces the rotation center of the upper surface of the substrate W. The rotation center of the upper surface of the substrate W is the position on the upper surface of the substrate W that intersects the rotation axis A1. When the liquid nozzle 9 is in the starting position, it does not face the upper surface of the substrate W and is located outside the processing cup 7 when viewed from above.

[0081] The drug nozzle 9 is connected to a drug conduit 40 that guides the drug solution to the nozzle. A drug valve 50 is installed within the drug conduit 40, which opens and closes the flow path within the conduit. When the drug valve 50 is open, the drug solution is continuously ejected downwards from the nozzle outlet of the drug nozzle 9. When the drug nozzle 9 is in the center position, opening the drug valve 50 supplies the drug solution to the central region containing the center of rotation on the upper surface of the substrate W.

[0082] The liquid nozzle 9 may also differ from that in this embodiment, and may be a fixed nozzle with both horizontal and vertical positions fixed. Furthermore, the liquid nozzle 9 may also differ from that in this embodiment, and may have a dual-fluid nozzle configuration capable of mixing and ejecting liquid and gas.

[0083] Specific examples of the liquid sprayed from the liquid nozzle 9 include etching solution and cleaning solution. More specifically, the liquid may be hydrofluoric acid, APM solution (a mixture of ammonia and hydrogen peroxide), HPM solution (a mixture of hydrochloric acid and hydrogen peroxide), buffered hydrofluoric acid (a mixture of hydrofluoric acid and ammonium fluoride), etc.

[0084] In this embodiment, the cleaning fluid nozzle 10 is a fixed nozzle configured to spray cleaning fluid towards the rotation center of the upper surface of the substrate W. A cleaning fluid valve 51 is installed in the cleaning fluid nozzle 10 to open and close the flow path within the cleaning fluid piping 41. When the cleaning fluid valve 51 is opened, cleaning fluid is continuously sprayed downwards from the nozzle outlet of the cleaning fluid nozzle 10, supplying it to the central region of the upper surface of the substrate W. The cleaning fluid nozzle 10 is not necessarily a fixed nozzle; it may also be a movable nozzle that moves at least in the horizontal direction.

[0085] The cleaning fluid sprayed from the cleaning fluid nozzle 10 is not limited to DIW, but can also be any one of carbonated water, electrolyzed ionized water, hydrogen peroxide water, ozone water, diluted ammonia water (e.g., between 10 ppm and 100 ppm) and hydrochloric acid water with a dilution concentration (e.g., between 10 ppm and 100 ppm).

[0086] The lower surface nozzle 11 is inserted into the hollow lifting shaft 62, further penetrating the heater unit 6. The upper end of the lower surface nozzle 11 has an outlet 11a facing the central region of the lower surface of the substrate W. A fluid piping 42 is connected to the lower surface nozzle 11 to guide the processing fluid to it. A fluid valve 52 is installed in the lower surface nozzle 11 to open and close the flow path within the fluid piping 42. When the fluid valve 52 is opened, the processing fluid is continuously ejected upwards from the outlet 11a of the lower surface nozzle 11, supplying it to the central region of the lower surface of the substrate W. The supplied processing fluid can be a liquid or a gas.

[0087] The fluid nozzle 12 moves horizontally and vertically via the second nozzle moving unit 36. Through horizontal movement, the fluid nozzle 12 can move between a central position opposite to the rotation center of the upper surface of the substrate W and a starting position (retreat position) not opposite to the upper surface of the substrate W. Therefore, the fluid nozzle 12 can be positioned opposite the upper surface of the substrate W held in the rotating chuck 5.

[0088] When viewed from above, the starting position not facing the upper surface of the substrate W is the outer position of the rotating base 21, or more specifically, the outer position of the processing cup 7. The fluid nozzle 12 can approach or retreat from the upper surface of the substrate W to below it by moving vertically.

[0089] The second nozzle moving unit 36 ​​includes, for example, a vertically rotating shaft 36a, a horizontally extending arm 36b connected to the rotating shaft 36a, and an arm drive mechanism 36c for driving the arm 36b. The arm drive mechanism 36c causes the arm 36b to swing by rotating the rotating shaft 36a about a vertical axis of rotation, and moves the arm 36b up and down by raising and lowering the rotating shaft 36a in the vertical direction. The fluid nozzle 12 is fixed to the arm 36b. The fluid nozzle 12 moves in the horizontal and vertical directions according to the swinging and raising / lowering of the arm 36b. The arm drive mechanism 36c includes, for example, an actuator such as an electric motor or a cylinder (not shown).

[0090] In this embodiment, the fluid nozzle 12 functions as a low surface tension liquid nozzle (processing liquid nozzle) for ejecting low surface tension liquid and as a gas nozzle for ejecting gas. The low surface tension liquid piping 43 (processing liquid piping), the central gas piping 44, and a plurality of side gas piping 45 (first side gas piping 45A and second side gas piping 45B) are connected to the fluid nozzle 12.

[0091] A low surface tension liquid valve 53 (processing liquid valve) is installed in the low surface tension liquid piping 43 to open and close its flow path. A central gas valve 54 is installed in the central gas piping 44 to open and close its flow path. Multiple side gas valves 55 (first side gas valve 55A and second side gas valve 55B) are installed in multiple side gas piping 45 respectively. The flow path in each side gas piping 45 is opened and closed by the corresponding side gas valve 55.

[0092] In the central gas pipe 44, in addition to the central gas valve 54, a mass flow controller 56 is installed to properly regulate the gas flow rate within the flow path of the central gas pipe 44. In the first side gas pipe 45A, in addition to the first side gas valve 55A, a first variable flow valve 57A is installed to regulate the gas flow rate within the first side gas pipe 45A. In the second side gas pipe 45B, in addition to the second side gas valve 55B, a second variable flow valve 57B is installed to regulate the gas flow rate within the flow path of the second side gas pipe 45B. Furthermore, filters 58 for removing foreign matter are installed in each gas pipe (the central gas pipe 44 and the multiple side gas pipes 45).

[0093] The fluid nozzle 12 includes: a low surface tension liquid outlet (processing liquid outlet) 70, which continuously ejects low surface tension liquid supplied from the low surface tension liquid piping 43 downwards; a central gas outlet 71, which linearly ejects gas supplied from the central gas piping 44 downwards; and a plurality of side gas outlets 72 (first side gas outlet 72A and second side gas outlet 72B), which radially eject gas supplied from corresponding side gas piping 45 in a horizontal direction. The gas ejected from the plurality of side gas outlets 72 forms a gas flow parallel to the upper surface of the substrate W, namely a parallel gas flow 100 (see reference). Figure 3 The first side gas outlet 72A and the second side gas outlet 72B are both examples of gas outlets.

[0094] The low surface tension liquid ejected from the fluid nozzle 12 is, for example, an organic solvent such as IPA. The organic solvent that functions as a low surface tension liquid includes, for example, a liquid containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, PGEE (propylene glycol monoethyl ether), and trans-1,2-dichloroethylene.

[0095] Organic solvents that function as low surface tension liquids do not necessarily need to contain only monomeric components; they can also be liquids mixed with other components. For example, they can be mixtures of IPA and DIW, or mixtures of IPA and HFE.

[0096] The gas ejected from the fluid nozzle 12 is not limited to nitrogen. Air may also be ejected from the fluid nozzle 12. Furthermore, the gas ejected from the fluid nozzle 12 may be an inert gas other than nitrogen. The inert gas is not limited to nitrogen, but is any gas that is inert relative to the upper surface of the substrate W. Examples of inert gases include rare gases such as argon, in addition to nitrogen.

[0097] Next, use Figures 3-9 The configuration of the fluid nozzle 12 will be explained. Figure 3 This is a schematic top view used to illustrate an example of the configuration of the fluid nozzle 12. Figure 3 This indicates that the fluid nozzle 12 is in the center position.

[0098] refer to Figure 3 When the fluid nozzle 12 is in the central position, the central gas outlet 71 faces the center C of the upper surface of the substrate W. Typically, the center C of the upper surface of the substrate W coincides with the rotation center of the upper surface of the substrate W. That is, the vertical central axis A2 passing through the center C of the upper surface of the substrate W coincides with the rotation axis A1. When the fluid nozzle 12 is in the central position, the side gas outlets 72 radially eject gas from the central side of the upper surface of the substrate W towards the peripheral side. Hereinafter, unless otherwise specified, the configuration of the fluid nozzle 12 will be described assuming that the fluid nozzle 12 is in the central position.

[0099] Figure 4 It is along Figure 3 The cross-sectional view of line IV-IV shown. Figure 5 yes Figure 4 An enlarged view of region V shown. Figure 6 It is along Figure 4 The sectional view of line VI-VI shown. Figure 7 It is along Figure 4 The sectional view along line VII-VII shown. Figure 8 It is along Figure 4The cross-sectional view of line VIII-VIII shown. Figure 9 It is along Figure 4 The cross-sectional view of the IX-IX line shown.

[0100] refer to Figure 4 The fluid nozzle 12 includes: a nozzle body 75 having a generally cylindrical shape extending in the vertical direction; a plurality of gas flow paths 76 (first gas flow path 76A and second gas flow path 76B) supplying (guiding) gas to a plurality of side gas outlets 72 (first side gas outlet 72A and second side gas outlet 72B); and a plurality of gas inlets 77 (first gas inlet 77A and second gas inlet 77B) allowing gas to flow from corresponding side gas pipes 45 into each of the plurality of gas flow paths 76. Each side gas pipe 45 extends in the horizontal direction (parallel to the upper surface of the substrate W) and is inserted into the corresponding gas inlet 77.

[0101] The nozzle body 75 has a bottom surface (lower surface) 75a and a generally cylindrical side surface 75b connected to the bottom surface 75a and extending in the vertical direction. The bottom surface 75a is the opposing surface facing the upper surface of the substrate W when the fluid nozzle 12 is in the central position. A plurality of side gas outlets 72 and a plurality of gas flow paths 76 are formed within the nozzle body 75.

[0102] Each gas flow path 76 has a generally cylindrical shape along the vertical direction. The second gas flow path 76B is located further out than the first gas flow path 76A and is coaxial with the first gas flow path 76A. The first gas flow path 76A and the second gas flow path 76B are rotationally symmetrical about their center line A3. When the fluid nozzle 12 is in the central position, the center line A3 of the gas flow path 76 coincides with the rotation axis A1 and the central axis A2.

[0103] The first side gas outlet 72A has a top-view annular shape and opens from the lower end of the side surface 75b. The second side gas outlet 72B has a top-view annular shape and is located in the side surface 75b further away from the upper surface of the substrate W than the first side gas outlet 72A (away from the bottom surface 75a). The gas ejected from each side gas outlet 72 diffuses radially outward from the side surface 75b. Multiple gas flow paths 76 are connected to the multiple side gas outlets 72.

[0104] Both the first side gas outlet 72A and the second side gas outlet 72B are rotationally symmetrical about the central axis A2 of the substrate W (the central line A3 of the gas flow path 76). In other words, the second side gas outlet 72B is located coaxially with the first side gas outlet 72A. The side surface 75b does not need to be entirely cylindrical; it can also be a cylindrical surface formed by only the area of ​​the side surface 75b with multiple side gas outlets 72 openings.

[0105] The width W1 of the first side gas outlet 72A in the cross direction D1 (typically the vertical direction) relative to the upper surface of the substrate W is greater than the width W2 of the second side gas outlet 72B in the cross direction D1 (typically the vertical direction) relative to the upper surface of the substrate W. The width W1 is, for example, more than 3 mm and less than 4 mm, and the width W2 is, for example, more than 2 mm and less than 3 mm.

[0106] Each side gas outlet 72 is defined by a pair of outlet demarcation surfaces 78 (upper outlet demarcation surface 78A and lower outlet demarcation surface 78B) formed inside the nozzle body 75. Each gas flow path 76 is defined by a pair of flow path demarcation surfaces 79 (inner flow path demarcation surface 79A and outer flow path demarcation surface 79B) formed inside the nozzle body 75. The pair of flow path demarcation surfaces 79 are connected to each of the pair of outlet demarcation surfaces 78.

[0107] On the bottom surface 75a of the nozzle body 75, a generally frustoconical recess 75c is formed, which causes the nozzle body 75 to be recessed. The recess 75c is recessed in a direction away from the upper surface of the substrate W (intersecting direction D1, typically vertical direction).

[0108] At the center of the nozzle body 75, a central gas pipe 44 and a low surface tension liquid pipe 43 are inserted parallel to the centerline A3. The lower ends of the central gas pipe 44 and the low surface tension liquid pipe 43 are located in the recess 75c of the nozzle body 75. The lower end of the central gas pipe 44 forms a central gas outlet 71. The lower end of the low surface tension liquid pipe 43 forms a low surface tension liquid outlet 70. The central gas outlet 71 and the low surface tension liquid outlet 70 are located within the recess 75c. The low surface tension liquid outlet 70 is located to the side of the central gas outlet 71.

[0109] Each gas flow path 76 has the same configuration. Therefore, the following reference will... Figure 4 The peripheral magnified representation of the first gas flow path 76A Figure 5 The details of the gas flow path 76 are explained below. Each gas flow path 76 includes: a gas storage section 80, with a flow path cross-sectional area larger than other parts of the gas flow path 76, so that gas G is stored inside it; a narrow flow path 81, connecting the gas storage section 80 and the corresponding side gas outlet 72, with a flow path cross-sectional area smaller than the gas storage section 80; and a flow rectification structure 82, provided in the narrow flow path 81 (the part of the gas flow path 76 that is different from the gas storage section 80), to rectify the airflow of the gas flow path 76.

[0110] The flow path cross-sectional area is the area of ​​a cross-section along a direction orthogonal to the direction (flow path direction) along the gas flow path 76. The flow path cross-sectional area CA1 of the gas storage section 80 is the cross-sectional area of ​​the gas flow path 76 in the horizontal direction.

[0111] In the first embodiment, the narrow flow path 81 includes: a straight flow path 85 connecting the downstream end of the gas storage section 80 and the upstream end of the corresponding side gas outlet 72, extending in a straight line in the circumferential direction CD (typically orthogonal, also vertical) relative to the centerline A3 around the gas flow path 76; and a curved flow path 86, in which the middle portion of the straight flow path 85 is curved. The straight flow path 85 includes: an upstream straight flow path 87 connecting the downstream end of the gas storage section 80 and the upstream end of the curved flow path 86, extending in a straight line in the intersection direction D1; and a downstream straight flow path 88 connecting the corresponding side gas outlet 72 and the downstream end of the curved flow path 86, extending in a straight line in the intersection direction D1. The curved flow path 86 is a top-view annular flow path extending in the horizontal direction.

[0112] The rectifying structure 82 includes: a plurality of first shielding portions 90, which shield the gas moving downstream of the gas flow path 76; and a plurality of second shielding portions 91, which are disposed further downstream of the gas flow path 76 than the plurality of first shielding portions 90, and shield the gas moving downstream of the gas flow path 76. In the first embodiment, the plurality of first shielding portions 90 are disposed in the upstream straight flow path 87, and the plurality of second shielding portions 91 are disposed in the downstream straight flow path 88.

[0113] refer to Figure 6 Multiple first shielding sections 90 are spaced apart from each other on the circumferential CD. Gas G (reference) within the upstream linear flow path 87 Figure 8 The current flows downstream through the gap between adjacent first shielding sections 90 (first rectifier circuit 95). (Reference) Figure 7 Multiple second shielding sections 91 are also spaced apart from each other on the circumferential CD. Gas G (reference) within the downstream straight flow path 88 Figure 8 It flows downstream through the gap between adjacent second shielding parts 91 (second rectifier circuit 96).

[0114] refer to Figure 8 The positions (circumferential phases) of the plurality of second shielding portions 91 on the circumferential CD are offset relative to the positions (circumferential phases) of the plurality of first shielding portions 90 on the circumferential CD. In other words, the circumferential phases of the plurality of second shielding portions 91 are different from the circumferential phases of the plurality of first shielding portions 90. The first rectifier flow path 95 between adjacent first shielding portions 90 is a straight line along the crossing direction D1. The second rectifier flow path 96 between adjacent second shielding portions 91 is a straight line along the crossing direction D1. The positions of the plurality of second rectifier flow paths 96 on the circumferential CD are offset relative to the positions of the plurality of first rectifier flow paths 95 on the circumferential CD. In other words, the circumferential phases of the plurality of second rectifier flow paths 96 are different from the circumferential phases of the plurality of first rectifier flow paths 95.

[0115] By using this fluid nozzle 12, the following effects are achieved: Each gas inlet 77 allows gas G to flow from the circumferential direction CD (parallel to the upper surface of the substrate W) of the gas flow path 76 into the gas storage section 80 (see reference 80) of the corresponding gas flow path section 76. Figure 5 Gas G supplied to the gas storage section 80, such as... Figure 9 As shown, a swirling airflow TG is formed along the circumferential direction CD within the gas storage section 80. The flow path cross-sectional area CA1 of the gas storage section 80 is larger than the flow path cross-sectional area CA2 of other parts of the gas flow path 76, meaning that the interior of the gas storage section 80 is a spacious area. Therefore, the gas G is dispersed within the gas storage section 80. Consequently, the flow velocity of the gas G supplied to the gas storage section 80 decreases, and the velocity difference of the gas G at various locations along the circumferential direction CD of the gas flow path 76 decreases. In other words, the volume of gas flowing into the gas storage section 80 is concentrated within the gas storage section 80.

[0116] Gas G in the gas storage section 80 flows into the narrow flow path 81 from its downstream end. Gas G flowing within the narrow flow path 81 is rectified by the rectifying structure 82, reducing the circumferential component of the gas G's velocity. Consequently, the direction of movement of gas G is adjusted to be along the gas flow path 76. Specifically, because a portion of the upstream straight flow path 87 on the circumferential CD is blocked by multiple first shielding sections 90, the circumferential component of the gas velocity is reduced when passing between two adjacent first shielding sections 90 on the circumferential CD (first rectifying flow path 95).

[0117] The circumferential component of the gas G's velocity is reduced through the first rectifier flow path 95. On the other hand, downstream of the plurality of first shielding portions 90 in the gas flow path 76, the flow rate of gas G flowing in the circumferential position is reduced, similar to the first shielding portions 90. In the first embodiment, the plurality of second shielding portions 91, which shield the gas G from moving downstream of the gas flow path 76, are positioned offset from the circumferential CD of the plurality of first shielding portions 90, further downstream of the plurality of first shielding portions 90. Therefore, similar to the second shielding portions 91, the flow rate of gas G flowing in the circumferential position can be reduced, thereby improving the uniformity of the gas G flow rate at each position in the circumferential CD. Furthermore, by utilizing the plurality of first shielding portions 90 and the plurality of second shielding portions 91, the circumferential component of the gas G's velocity is reduced in two stages. This allows the movement direction of gas G flowing in the gas flow path 76 to be closer to the radial direction RD.

[0118] As the gas flows through the narrow flow path 81, it enters the curved flow path 86 from the upstream straight flow path 87. At this point, the gas collides with the portion of the curved flow path 86 defined in the flow path zoning surface 79, reducing the gas velocity. This further reduces the velocity difference of the gas at various locations along the circumferential direction CD. The gas passing through the narrow flow path 81 is then radially ejected from the corresponding side gas outlet 72.

[0119] Thus, by using the gas storage section 80 and the curved flow path 86, the gas velocity is reduced, and the velocity difference of the gas along the circumferential CD is decreased. Therefore, the uniformity of the diffusion (parallel flow 100) of the gas G ejected from the corresponding side gas outlet 72 and moving from the center side of the upper surface of the substrate W towards the periphery can be improved. By reducing the circumferential component of the gas velocity through the rectification structure 82, the ejection direction of the gas from the side gas outlet 72 is adjusted to the direction along the gas flow path 76 (here, the radial direction RD). As a result, the upper surface of the substrate W can be well protected.

[0120] The gas storage section 80 is located on the upstream side of the gas flow path 76 (upstream of the narrow flow path 81). Therefore, the flow path can be adequately ensured so that the gas G flows after its velocity is reduced by the gas storage section 80. Thus, it is easy to rectify the gas G into the desired direction.

[0121] In addition to the first side gas outlet 72A, gas is also ejected from the second side gas outlet 72B, which is located further away from the upper surface of the substrate W than the first side gas outlet 72A. Therefore, the gas layer (parallel airflow 100) extending from the center side to the periphery of the upper surface of the substrate W can be thickened. As a result, the upper surface of the substrate W can be protected better.

[0122] A side gas outlet 72 is formed in the nozzle body 75 and connected to a cylindrical side surface 75b on the bottom surface 75a opposite to the upper surface of the substrate W. Therefore, gas can easily diffuse radially from the side gas outlet 72.

[0123] Since the central gas outlet 71 is located within the recess 75c, the gas ejected from the central gas outlet 71 towards the center C of the upper surface of the substrate W diffuses within the recess 75c, filling the space between the upper surface of the substrate W and the recess 75c. Because the recess 75c is formed in a frustoconical shape, the gas can diffuse evenly from the entire periphery of the recess 75c to the outer side of the recess 75c. This improves the uniformity of gas diffusion from the center C side of the upper surface of the substrate W towards the periphery.

[0124] Figure 10 This is a block diagram illustrating the electrical configuration of the main parts of the substrate processing apparatus 1. The controller 3 is equipped with a microcomputer and controls the controlled objects equipped in the substrate processing apparatus 1 according to a specific control program.

[0125] Specifically, the controller 3 includes a processor (CPU (Central Processing Unit)) 3A and a memory 3B storing the control program. The controller 3 is configured to perform various controls for substrate processing by causing the processor 3A to execute the control program.

[0126] In particular, controller 3 is programmed to control the conveying robot IR and CR, rotary motor 23, first nozzle moving unit 35, second nozzle moving unit 36, heater energizing unit 64, heater lifting unit 65, protective component lifting unit 33, clamping pin drive unit 25, liquid valve 50, cleaning fluid valve 51, fluid valve 52, low surface tension liquid valve 53, central gas valve 54, side gas valve 55, mass flow controller 56, first variable flow valve 57A, and second variable flow valve 57B. By controlling the valves, controller 3 can control whether fluid is ejected from the corresponding nozzle, or the flow rate of fluid ejected from the corresponding nozzle.

[0127] The following steps are performed by controlling the configuration via controller 3. In other words, controller 3 is programmed to perform the following steps.

[0128] Figure 11 This is a flowchart illustrating an example of substrate processing in substrate processing apparatus 1, primarily showing the processing achieved by causing controller 3 to execute an action program. In the substrate processing of substrate processing apparatus 1, for example... Figure 11 As shown, the following steps are performed in sequence: chemical treatment (step S1), cleaning treatment (step S2), low surface tension liquid treatment (step S3), and drying treatment (step S4).

[0129] The following refers primarily to the substrate processing performed by the substrate processing apparatus 1. Figure 2 and Figure 11 Please provide an explanation.

[0130] The untreated substrate W is transferred from the carrier CA to the processing unit 2 by the transfer robots IR and CR, and then handed over to the rotating chuck 5 (substrate transfer step). At this time, the heater unit 6 is positioned in the lower position. Furthermore, the chuck pin drive unit 25 moves the chuck pins 20 to the open position. In this state, the transfer robot CR transfers the substrate W to the rotating chuck 5. The substrate W is then held on the rotating chuck 5 until it is removed by the transfer robot CR (substrate holding step). Afterward, the chuck pin drive unit 25 moves multiple chuck pins 20 to the closed position. Thus, the substrate W is held by the multiple chuck pins 20.

[0131] After the transport robot CR retreats outside the processing unit 2, the chemical treatment begins (step S1). The controller 3 drives the rotary motor 23, causing the rotating base 21 to rotate at a specific chemical rotation speed. Meanwhile, the first nozzle moving unit 35 positions the chemical nozzle 9 at a chemical treatment position above the substrate W. The chemical treatment position can be the center position. The chemical valve 50 is then opened. As a result, a chemical solution such as hydrofluoric acid is supplied from the chemical nozzle 9 to the upper surface of the rotating substrate W. The supplied chemical solution is distributed across the entire surface of the substrate W due to centrifugal force.

[0132] After a certain period of chemical treatment, a cleaning process (step S2) is performed to remove the chemical solution from the substrate W by replacing it with a cleaning solution such as DIW. Specifically, the chemical solution valve 50 is closed, and instead, the cleaning solution valve 51 is opened. This supplies cleaning solution from the cleaning solution nozzle 10 to the upper surface of the rotating substrate W. The supplied cleaning solution is spread across the entire surface of the substrate W due to centrifugal force. The chemical solution on the substrate W is rinsed off by the cleaning solution. During this process, the first nozzle moving unit retracts the chemical solution nozzle 9 from above the substrate W to the side of the processing cup 7.

[0133] After a certain period of cleaning, a low surface tension liquid treatment is performed to replace the cleaning solution on the substrate W with a low surface tension liquid such as IPA (step S3). Figures 12A-12D This is a schematic diagram illustrating the low surface tension liquid processing of the substrate processing performed by the substrate processing apparatus 1. Hereinafter, except... Figure 2 and Figure 11 In addition, appropriate references should also be made. Figures 12A-12D .

[0134] Specifically, the second nozzle moving unit 36 ​​moves the fluid nozzle 12 to a low surface tension liquid treatment position above the substrate W. The low surface tension liquid treatment position can also be the position of the center of rotation of the low surface tension liquid ejected from the low surface tension liquid outlet 70 provided on the fluid nozzle 12 onto the upper surface of the substrate W.

[0135] Next, the cleaning fluid valve 51 is closed, stopping the ejection of cleaning fluid from the cleaning fluid nozzle 10. With the ejection of cleaning fluid from the cleaning fluid nozzle 10 stopped, the first side gas valve 55A and the second side gas valve 55B are opened. As a result, gas is radially ejected from the center C side of the substrate W towards the periphery from the first side gas outlet 72A and the second side gas outlet 72B of the fluid nozzle 12 (gas ejection step). Thus, as... Figure 12A As shown, a parallel airflow 100 is formed, which covers the entire upper surface of the substrate W (more precisely, the outer region of the fluid nozzle 12 when viewed from above) (airflow forming step, upper surface covering step).

[0136] In this state, the low surface tension liquid valve 53 is opened. As a result, low surface tension liquid is supplied from the fluid nozzle 12 (low surface tension liquid outlet 70) to the upper surface of the rotating substrate W (low surface tension liquid supply step, processing liquid supply step). The supplied low surface tension liquid, due to centrifugal force, spreads across the entire surface of the substrate W, displacing the cleaning liquid on the substrate W. As a result, a low surface tension liquid film 110 is formed on the upper surface of the substrate W (liquid film formation step).

[0137] In the low surface tension liquid processing, the rotary motor 23 slows down the rotation of the rotary chuck 5, stopping the rotation of the substrate W. Then, the low surface tension liquid valve 53 is closed, stopping the supply of the low surface tension liquid. Thus, as... Figure 12B As shown, the liquid film 110 is immersed in a stationary state on the substrate W. With rotation stopped, the clamping pin drive unit 25 moves multiple clamping pins 20 to the open position, and the heater lifting unit 65 raises the heater unit 6 towards the substrate W. Thus, the heater unit 6 receives the substrate W from the multiple clamping pins 20. The heater unit 6 heats the substrate W in a raised state. Through heating of the substrate W, a portion of the low surface tension liquid in contact with the upper surface of the substrate W evaporates, thereby forming a vapor layer between the liquid film 110 and the upper surface of the substrate W. The liquid film 110, supported by the vapor layer, is then removed. Preferably, the vapor layer is formed to a thickness such that the low surface tension liquid does not penetrate the recesses (trenches, micropores) of the circuit pattern on the upper surface of the substrate W. This reduces the surface tension of the low surface tension liquid acting on the circuit pattern.

[0138] When removing the liquid film 110 of the low surface tension liquid, the second nozzle moving unit 36 ​​moves the fluid nozzle 12 to the center position. Simultaneously, the center gas valve 54 is opened. Thus, as... Figure 12C As shown, gas is ejected linearly from the central gas outlet 71 onto the liquid film 110 on the substrate W (vertical gas ejection step). At the location receiving the ejected gas, i.e., the center C of the substrate W, the gas removes the liquid film 110, forming an opening 111 in the center of the liquid film 110 that exposes the upper surface of the substrate W (opening formation step). The gas supplied to the upper surface of the substrate W forms a parallel gas flow 101 that diffuses radially along the upper surface of the substrate W. Figure 12D As shown, by continuing to eject gas from the central gas outlet 71, the low surface tension liquid is pushed towards the periphery of the substrate W by the parallel airflow 101, thereby enlarging the opening 111. By enlarging the opening 111, the low surface tension liquid on the substrate W is discharged out of the substrate W (opening enlargement step, liquid film removal step).

[0139] Thus, after the low surface tension liquid treatment is completed, the rotary motor 23 causes the substrate W to rotate at a high speed of drying rotation. This performs a drying process (step S4) to use centrifugal force to remove the liquid components from the substrate W.

[0140] Subsequently, the second nozzle moving unit 36 ​​retracts the fluid nozzle 12, and the rotary motor 23 stops the rotation of the rotary chuck 5. Furthermore, the heater lifting unit 65 moves the heater unit 6 to the lower position. Additionally, the chuck pin driving unit 25 moves the chuck pin 20 to the open position. Then, also refer to... Figure 1 The transfer robot CR enters the processing unit 2, picks up the processed substrate W from the rotating chuck 5, and moves it out of the processing unit 2 (substrate removal step). The substrate W is then transferred from the transfer robot CR to the transfer robot IR, which stores it in the carrier CA.

[0141] Figures 12A-12D In the low surface tension liquid processing shown, the low surface tension liquid is supplied from the fluid nozzle 12 while a parallel airflow 100 is formed. However, it is not necessary to eject gas from the first side gas outlet 72A and the second side gas outlet 72B before the low surface tension liquid is supplied. That is, the low surface tension liquid can be ejected before the gas is ejected, or the gas can be ejected from the first side gas outlet 72A and the second side gas outlet 72B after the low surface tension liquid has been ejected, that is, after the immersion state is formed.

[0142] If the fluid nozzle 12 of the first embodiment is used, as described above, the gas ejected from the first side gas outlet 72A can improve the diffusion uniformity of the gas (parallel airflow 100) from the center C side of the upper surface of the substrate W toward the peripheral side. As a result, the upper surface of the substrate W can be well protected by the gas ejected radially from the first side gas outlet 72A.

[0143] Here, sometimes air enters the corresponding gas flow path 76 from the side gas outlet 72, causing oxygen and water vapor to mix into the gas ejected from the side gas outlet 72. There is concern that the mixing of oxygen and water vapor into the gas ejected from the side gas outlet 72 may lead to an increase in the oxygen concentration and humidity in the atmosphere near the upper surface of the substrate W.

[0144] In the fluid nozzle 12 of the first embodiment, a second side gas outlet 72B is also provided at a position further away from the substrate W than the first side gas outlet 72A. Therefore, similar to the first side gas outlet 72A, the gas ejected from the second side gas outlet 72B can improve the diffusion uniformity of the gas (parallel airflow 100) from the center C side of the upper surface of the substrate W toward the periphery.

[0145] Because a second side gas outlet 72B is provided, the gas ejected from the second side gas outlet 72B, which is relatively far from the upper surface of the substrate W, suppresses air from entering the first side gas outlet 72A, which is relatively close to the upper surface of the substrate W. On the other hand, since the side gas outlet 72 is not located further away from the upper surface of the substrate W than the second side gas outlet 72B, there is no airflow to suppress air from entering the second side gas outlet 72B. Therefore, by making the width W2 of the second side gas outlet 72B in the intersecting direction D1 narrower than the width W1 of the first side gas outlet 72A in the intersecting direction D1, air can be suppressed from entering the second side gas outlet 72B. As a result, the increase in oxygen concentration and humidity in the atmosphere near the upper surface of the substrate W can be suppressed.

[0146] As a result, it is possible to suppress the dissolution of oxygen into the low surface tension liquid on the substrate W and the mixing of water into the low surface tension liquid on the substrate W. Because water mixes into the low surface tension liquid, the surface tension acting on the circuit pattern increases. Therefore, it is possible to suppress undesirable oxidation and circuit pattern collapse of the circuit pattern formed on the upper surface of the substrate W.

[0147] Furthermore, as described above, since the central gas outlet 71 is located within the frustum-shaped recess 75c, the gas ejected from the central gas outlet 71 easily diffuses radially and uniformly. Therefore, the liquid film 110 can diffuse evenly towards the periphery of the substrate W. Thus, low surface tension liquids (processing liquids) can be effectively removed from the upper surface of the substrate W.

[0148] Next, refer to Figures 13-17 The first to fourth variations of the flow straightening structure 82 of the fluid nozzle 12 in the first embodiment will be described. For example, such as Figure 13 As shown, the width of the first rectifier circuit 95 on the circumferential CD can also be narrowed towards the downstream side of the flow path direction (the lower side of the cross direction D1). Similarly, the width of the second rectifier circuit 96 on the circumferential CD can also be narrowed towards the downstream side of the flow path direction (the lower side of the cross direction D1).

[0149] In addition, such as Figure 14 and Figure 15 As shown, the first rectifier flow path 95 may also be cylindrical along the flow path direction (crossing direction D1), and the second rectifier flow path 96 may also be cylindrical along the flow path direction (crossing direction D1). In this case, the circumferential ends of adjacent first shielding portions 90 are connected, and the plurality of first shielding portions 90 constitute a shielding plate forming a plurality of through holes (first rectifier flow path 95) as a whole. Although not shown in the figure, the circumferential ends of adjacent second shielding portions 91 are connected, and the plurality of second shielding portions 91 constitute a shielding plate forming a plurality of through holes (second rectifier flow path 96) as a whole.

[0150] In addition, such as Figure 16 As shown, the first shielding portion 90 may also have a straight blade shape extending linearly in the radial direction RD. Furthermore, as... Figure 17 As shown, the first shielding portion 90 may also have a curved blade shape in which the outer end in the radial direction RD is located on the side further in the circumferential direction CD than the inner end. The second shielding portion 91 may also have a blade shape similar to the first shielding portion 90.

[0151] <Second Implementation>

[0152] Figure 18 This is a schematic cross-sectional view used to illustrate an example of the configuration of the fluid nozzle 12P of the processing unit 2 equipped in the substrate processing apparatus 1P according to the second embodiment. Figure 19 yes Figure 18 A magnified view of the XIX region shown. Figure 18 and Figure 19 In, for the aforementioned Figures 1 to 17 The structure shown is the same as the one indicated, and the label is the same. Figure 1 The same reference symbols are omitted from the description.

[0153] The substrate processing apparatus 1P of the second embodiment has the same configuration as the substrate processing apparatus 1 of the first embodiment, except for the fluid nozzle 12P. The main difference between the fluid nozzle 12P of the second embodiment and the fluid nozzle 12 of the first embodiment is that the narrow flow path 81 includes a plurality of curved flow paths 86 (see reference). Figure 19 The narrow flow path 81 of the fluid nozzle 12P includes: a straight flow path 85 connecting the downstream end of the gas storage section 80 and the upstream end of the corresponding side gas outlet 72; and multiple curved flow paths 86 (a first curved flow path 86A and a second curved flow path 86B) that bend the middle portion of the straight flow path 85. Each curved flow path 86 has a top-view annular shape that extends in the horizontal direction.

[0154] The straight flow path 85 includes: an upstream straight flow path 87, connected to the downstream end of the gas storage section 80 and the upstream end of the first curved flow path 86A, extending straight in the crossing direction D1; a midstream straight flow path 89, connected to the downstream end of the first curved flow path 86A and the upstream end of the second curved flow path 86B, extending straight in the crossing direction D1; and a downstream straight flow path 88, connected to the downstream end of the second curved flow path 86B and the corresponding side gas outlet 72, extending straight in the crossing direction D1. The upstream straight flow path 87, the midstream straight flow path 89, and the downstream straight flow path 88 each have a cylindrical shape extending in the crossing direction D1.

[0155] In the second embodiment, a plurality of first shielding portions 90 of the rectifying structure 82 are provided in the midstream straight flow path 89, and a plurality of second shielding portions 91 are provided in the downstream straight flow path 88.

[0156] According to the second embodiment, the same effects as in the first embodiment are achieved. According to the second embodiment, multiple curved flow paths 86 are also provided. Therefore, compared to a single curved flow path 86, the gas flow rate can be reduced, further reducing the gas flow rate difference along the circumferential CD. Therefore, the diffusion uniformity of the gas ejected from the corresponding side gas outlet 72 and from the center C side of the upper surface of the substrate W toward the peripheral side can be improved.

[0157] <Third Implementation>

[0158] Figure 20 This is a schematic cross-sectional view used to illustrate an example of the configuration of the fluid nozzle 12Q of the processing unit 2 equipped with the substrate processing apparatus 1Q in the third embodiment. Figure 21 yes Figure 20 An enlarged view of the XXI region shown. Figure 20 and Figure 21 In, for the aforementioned Figures 1 to 19 The structure shown is the same as the one indicated, and the label is the same. Figure 1 The same reference symbols are omitted from the description.

[0159] The substrate processing apparatus 1Q of the third embodiment has the same configuration as the substrate processing apparatus 1 of the first embodiment, except for the fluid nozzle 12Q. The main difference between the fluid nozzle 12Q of the third embodiment and the fluid nozzle 12P of the second embodiment is that the narrow flow path 81 is connected at a position closer to the outer end in the radial direction than the inner end in the gas storage section 80. In the fluid nozzle 12Q, similar to the fluid nozzle 12P of the second embodiment, a plurality of curved flow paths 86 are provided, but unlike the fluid nozzle 12P of the second embodiment, the midstream straight flow path 89 is located further in the radial direction than the upstream straight flow path 87 and the downstream straight flow path 88.

[0160] According to the third embodiment, the same effect as the second embodiment is achieved.

[0161] <Fourth Implementation>

[0162] Figure 22 This is a schematic cross-sectional view used to illustrate an example of the configuration of the fluid nozzle 12R of the processing unit 2 equipped with the substrate processing apparatus 1R in the fourth embodiment. Figure 23 yes Figure 22 An enlarged view of region XXIII shown. Figure 22 and Figure 23 In, for the aforementioned Figures 1 to 21 The structure shown is the same as the one indicated, and the label is the same. Figure 1 The same reference symbols are omitted from the description.

[0163] The substrate processing apparatus 1R of the fourth embodiment has the same configuration as the substrate processing apparatus 1 of the first embodiment, except for the fluid nozzle 12R. The main difference between the fluid nozzle 12R of the fourth embodiment and the fluid nozzle 12 of the first embodiment is that the rectifying structure 82 is provided in the curved flow path 86. Specifically, a plurality of first shielding portions 90 constituting part of the rectifying structure 82 are provided in the curved flow path 86. Therefore, a plurality of first rectifying flow paths 95 are also provided in the middle of the curved flow path 86.

[0164] <Other Implementation Methods>

[0165] This invention is not limited to the embodiments described above, and may be further implemented in other forms.

[0166] For example, in embodiments 2 to 4, variations of embodiment 1 can be applied. Figures 13-17 Furthermore, the various embodiments can be combined. For example, in the fluid nozzle 12P of the second embodiment or the fluid nozzle 12Q of the third embodiment, the flow rectification structure 82 can be provided in the curved flow path 86 in the same way as in the fourth embodiment. If it is a fluid nozzle 12P or a fluid nozzle 12Q, then a plurality of first shielding portions 90 and a plurality of second shielding portions 91 can be provided in a plurality of curved flow paths 86 respectively.

[0167] In the various embodiments described, the nozzle body 75 is constructed as a single component, with a gas flow path 76 formed within it. However, unlike the embodiments described, the nozzle body 75 may also be constructed from multiple components. Specifically, the nozzle body 75 may also include multiple flow path demarcation components, each having a surface demarcating the gas flow path 76. In this way, it is easier to form the gas flow path 76 compared to a configuration where the gas flow path 76 is formed within a single component.

[0168] Furthermore, in the aforementioned embodiment, the substrate processing apparatus 1 includes a transfer robot IR, a transfer robot CR, multiple processing units 2, and a controller 3. However, the substrate processing apparatus 1 and 1P may also be composed of a single processing unit 2 and a controller 3, without the transfer robot IR or CR. Alternatively, the substrate processing apparatus 1 may also be composed of only a single processing unit 2. In other words, the processing unit 2 may also be an example of a substrate processing apparatus.

[0169] Furthermore, in the above embodiment, the fluid nozzles 12, 12P, 12Q, and 12R face the upper surface of the substrate W. However, unlike the above embodiment, the fluid nozzles 12, 12P, 12Q, and 12R may be configured to face the lower surface of the substrate W.

[0170] Furthermore, in each of the embodiments described, the straight flow path 85 of the narrow flow path 81 extends in the vertical direction. However, the straight flow path 85 does not necessarily extend in the vertical direction. If the direction in which the straight flow path 85 extends is relative to the direction of intersection with the circumferential CD (relative to the direction of intersection with the upper surface of the substrate W), then it may also be a direction inclined relative to the vertical direction.

[0171] Furthermore, in the various embodiments described, such as Figure 6 As shown, the circumferential phases of the plurality of first rectifier flow paths 95 in the first gas flow path 76A approximately coincide with the circumferential phases of the plurality of first rectifier flow paths 95 in the second gas flow path 76B, as follows: Figure 7 As shown, the circumferential phase of the second rectifier flow path 96 of the first gas flow path 76A roughly coincides with the circumferential phase of the second rectifier flow path 96 of the second gas flow path 76B. However, with Figure 6 and Figure 7 Different examples can be made so that the circumferential phase of the first rectifier flow path 95 of the first gas flow path 76A is different from the circumferential phase of the first rectifier flow path 95 of the second gas flow path 76B, and the circumferential phase of the second rectifier flow path 96 of the first gas flow path 76A is different from the circumferential phase of the second rectifier flow path 96 of the second gas flow path 76B.

[0172] Furthermore, in the various embodiments described, such as Figure 8 As shown, in each gas flow path 76, the circumferential phase of the plurality of first rectifier flow paths 95 is different from the circumferential phase of the plurality of second rectifier flow paths 96. However, it is also possible to... Figure 8 The example shown is different, so that the circumferential phase of the plurality of first rectifier paths 95 coincides with the circumferential phase of the plurality of second rectifier paths 96.

[0173] In each of the embodiments described, such as Figure 4 As shown, the width W2 of the second side gas outlet 72B is narrower than the width W1 of the first side gas outlet 72A. However, it can also be compared with... Figure 4 The examples shown are different, but as... Figure 24 As shown, the width W2 of the second side gas outlet 72B is wider than the width W1 of the first side gas outlet 72A.

[0174] When the gas flow rate ejected from the central gas outlet 71 is relatively low (e.g., between 5 L / min and 15 L / min), the gas pressure near the upper surface of the substrate W tends to decrease. When the gas pressure near the upper surface of the substrate W is relatively low, the gas ejected from the first side gas outlet 72A, which is relatively close to the upper surface of the substrate W, is attracted to the upper surface side of the substrate W, raising concerns about reduced diffusion uniformity of the gas ejected from the first side gas outlet 72A.

[0175] Therefore, by making the width W1 of the first side gas outlet 72A narrower than the width W2 of the second side gas outlet 72B, the linear velocity of the gas ejected from the first side gas outlet 72A can be increased, thus suppressing the attraction of the gas ejected from the first side gas outlet 72A to the upper surface of the substrate W. This improves the uniformity of the gas ejected from the first side gas outlet 72A. Furthermore, it improves the diffusion uniformity of the gas ejected from the multiple side gas outlets 72 and from the center side of the upper surface of the substrate W towards the periphery.

[0176] When the gas flow rate ejected from the central gas outlet 71 is relatively large (e.g., around 50 L / min), as described in each embodiment, it is preferable that the width W2 of the second side gas outlet 72B is narrower than the width W1 of the first side gas outlet 72A.

[0177] Figure 24 The configuration shown, that is, the width W2 of the second side gas outlet 72B being wider than the width W1 of the first side gas outlet 72A, can be applied to the embodiment described above. Furthermore, it can also be used with... Figure 4 and Figure 24 The width W2 of the second side gas outlet 72B is different from that of the width W1 of the first side gas outlet 72A.

[0178] Furthermore, although heater unit 6 is provided in the substrate processing apparatuses 1, 1P, 1Q, and 1R, it is not necessary to install heater unit 6; the substrate W can be heated by a mechanism other than heater unit 6. Alternatively, a mechanism for heating the substrate W may not be provided initially.

[0179] Furthermore, the substrate treatment involves low surface tension liquid processing (reference). Figures 12A-12C In this process, the substrate W is heated by the heater unit 6, and a gas phase layer is formed between the liquid film 110 and the substrate W, during which a low surface tension liquid is removed from the substrate W. However, the low surface tension liquid treatment can also be a process in which the liquid film 110 is removed from the substrate W without forming a gas phase layer. The fluid nozzle 12 can also be used for low surface tension liquid treatment in which the low surface tension liquid is removed from the substrate W without forming a gas phase layer, by at least one of the convection generated in the liquid film 110 due to heating, the blowing force of the gas, and the centrifugal force of the rotation of the substrate W.

[0180] Furthermore, fluid nozzles 12, 12P, 12Q, and 12R may have a single gas outlet (first side gas outlet 72A) or may not have a second side gas outlet 72B. In the latter case, the gas flow path 76 of the nozzle body 75 of the fluid nozzle 12 is single.

[0181] Furthermore, although the expressions "along," "horizontal," "orthogonal," and "vertical" are used in the described embodiments, they need not be strictly "along," "horizontal," "orthogonal," or "vertical." That is to say, each expression allows for deviations in manufacturing precision, setting precision, etc.

[0182] In addition to the features described in the claims, the following features may also be extracted from this specification and the drawings. These features can be arbitrarily combined with the features described in the technical means item used to solve the problem.

[0183] (Note 1-1)

[0184] A fluid nozzle includes: a nozzle body having a bottom surface and a side surface connected to the bottom surface;

[0185] A cylindrical gas flow path is formed inside the nozzle body; and

[0186] An annular gas outlet opens from the side of the nozzle body and radially ejects gas outward from the outer side of the side; and

[0187] The gas flow path has: a gas storage section, the flow path cross-sectional area being larger than other parts in the gas flow path; and a rectification structure, wherein a portion of the gas flow path different from the gas storage section is provided to rectify the airflow within the gas flow path.

[0188] According to Appendix 1-1, since a gas storage section with a larger cross-sectional area than other parts of the gas flow path is provided in the gas flow path, the gas supplied to the gas storage section is dispersed within the gas storage section. Therefore, reducing the gas flow velocity supplied to the gas storage section reduces the velocity difference of the gas at various locations along the circumference of the gas flow path. Furthermore, the gas in the gas flow path is rectified by a flow-rectifying structure provided in a different part of the gas flow path than the gas storage section. As a result, the direction of gas movement in the gas flow path is adjusted to be along the direction of the gas flow path. Therefore, the uniformity of the radial diffusion of the gas ejected from the gas nozzle can be improved. Therefore, for example, by making the bottom surface of the nozzle body face the main surface of the substrate when ejecting gas from the gas nozzle, the main surface of the substrate can be protected.

[0189] (Notes 1-2)

[0190] As shown in Appendix 1-1, the fluid nozzle includes: a plurality of gas outlets and a plurality of gas flow paths that respectively guide gas to the plurality of gas outlets, and

[0191] The plurality of gas outlets have: an annular first gas outlet; and an annular second gas outlet, located further away from the bottom surface than the first gas outlet.

[0192] According to notes 1-2, in addition to the first gas outlet, gas is also ejected from the second gas outlet, which is located further away from the bottom surface of the nozzle body than the first gas outlet, thus thickening the radially diffused gas layer.

[0193] (Notes 1-3)

[0194] As in the fluid nozzles of Appendix 1-2, the width of the second gas outlet is narrower than the width of the first gas outlet.

[0195] Since a second gas outlet is located further away from the bottom surface of the nozzle body than the first gas outlet, the gas ejected from the second gas outlet (which is relatively far from the bottom surface of the nozzle body) prevents air from entering the first gas outlet (which is relatively close to the bottom surface of the nozzle body). On the other hand, since no gas outlet is located further away from the bottom surface of the nozzle body than the second gas outlet, there is no airflow to prevent air from entering the second gas outlet. Therefore, by making the width of the annular second gas outlet narrower than the width of the annular first gas outlet, air can be prevented from entering the second gas outlet. Therefore, for example, when the bottom surface of the nozzle body faces the main surface of the substrate, the increase in oxygen concentration in the atmosphere near the main surface of the substrate can be suppressed, and the main surface of the substrate can be further well protected.

[0196] (Notes 1-4)

[0197] As in the fluid nozzles of Appendix 1-2, the width of the second gas outlet is wider than the width of the first gas outlet.

[0198] According to Appendix 1-4, the linear velocity of the gas ejected from the first gas outlet can be increased. Therefore, for example, when the bottom surface of the nozzle body faces the main surface of the substrate, it is possible to suppress the attraction of the gas ejected from the first gas outlet to the main surface of the substrate. As a result, the diffusion uniformity of the gas ejected from the gas outlet and from the center side of the main surface of the substrate toward the peripheral side can be improved.

[0199] (Notes 1-5)

[0200] The fluid nozzle, as described in any of the appendices 1-1 to 1-4, has a plurality of first shielding portions spaced apart from each other in the circumferential direction of the gas flow path, which shield the gas moving downstream of the gas flow path.

[0201] According to Appendix 1-5, the shielding gas moves downstream of the gas flow path due to the plurality of first shielding portions spaced apart circumferentially. Therefore, when passing between two adjacent first shielding portions circumferentially, the circumferential component of the gas flow velocity is reduced. This allows the ejection direction of the gas from the gas nozzle to be closer to the radial direction of the gas flow path, thus further improving the diffusion uniformity of the gas ejected from the gas nozzle.

[0202] (Notes 1-6)

[0203] As shown in Appendix 1-5, the fluid nozzle, wherein the flow-rectifying structure further comprises a plurality of second shielding portions disposed downstream of the gas flow path than the plurality of first shielding portions, the shielding gas moving downstream of the gas flow path.

[0204] The positions of the plurality of second shielding portions in the circumferential direction are offset relative to the positions of the plurality of first shielding portions in the circumferential direction.

[0205] The multiple first shielding sections reduce the circumferential component of the gas flow velocity between two adjacent first shielding sections. Furthermore, downstream of the multiple first shielding sections in the gas flow path, the gas flow rate at the same circumferential position as the first shielding sections is reduced. Therefore, if the circumferential position of the multiple second shielding sections, which shield the gas, is offset relative to the circumferential position of the multiple first shielding sections and moves downstream of the gas flow path further downstream than the multiple first shielding sections, the gas flow rate at the same circumferential position as the second shielding sections can be reduced, thereby improving the uniformity of the gas flow rate at each circumferential position. Consequently, the diffusion uniformity of the gas ejected from the gas outlet can be further improved.

[0206] Furthermore, in addition to multiple first shielding sections, multiple second shielding sections can also reduce the circumferential component of the gas velocity. In other words, the circumferential component of the gas velocity can be reduced in two stages. As a result, the ejection direction of the gas ejected from the gas nozzle can be made closer to the radial direction of the gas flow path.

[0207] (Notes 1-7)

[0208] The fluid nozzle described in any of Appendices 1-1 to 1-6, wherein the gas flow path further comprises: a straight flow path extending linearly in a direction intersecting the circumferential direction of the gas flow path, and a curved flow path that bends the middle portion of the straight flow path. According to Appendices 1-7, by bending the straight flow path at its middle portion, the gas flow velocity is reduced, thereby reducing the gas flow velocity difference at various circumferential locations along the gas flow path.

[0209] (Notes 1-8)

[0210] The fluid nozzle as described in any of the appendices 1-1 to 1-7, wherein the fluid nozzle further comprises a central gas outlet that ejects gas toward the center of the main surface of the substrate.

[0211] A frustum-shaped recess is formed on the bottom surface of the fluid nozzle.

[0212] The central gas outlet is located within the recess.

[0213] According to Appendix 1-8, the central gas outlet is disposed within a frustoconical recess. Therefore, for example, when the bottom surface of the nozzle body faces the main surface of the substrate, gas is ejected from the central gas outlet, and the gas supplied to the center of the substrate's main surface diffuses within the recess while moving towards the periphery of the substrate. Because the recess is frustoconical, the gas can diffuse evenly from the entire periphery of the recess to the outer side of the recess. This improves the uniformity of gas diffusion ejected from the gas outlet.

[0214] (Notes 1-9)

[0215] The fluid nozzle described in Appendix 1-7 further includes a processing liquid outlet located within the recess, which sprays the processing liquid toward the main surface of the substrate. Therefore, for example, when the bottom surface of the nozzle body faces the main surface of the substrate, by simultaneously spraying the processing liquid from the processing liquid outlet toward the main surface of the substrate and spraying gas from the gas outlet, the processing liquid on the main surface of the substrate can be protected from the influence of the external atmosphere, and the gas outlet opens from the side of the fluid nozzle. For example, it can suppress the dissolution of oxygen contained in the external atmosphere into the processing liquid on the main surface of the substrate.

[0216] Furthermore, by ejecting gas from the central gas outlet and pushing the processing liquid toward the periphery of the substrate, the processing liquid can be removed from the periphery of the substrate. Since the gas ejected from the central gas outlet diffuses uniformly from the periphery of the recess to the outside of the recess, the processing liquid can be effectively removed from the main surface of the substrate.

[0217] (Notes 1-10)

[0218] The fluid nozzle, as described in any of the appendices 1-1 to 1-9, also includes a gas inlet for gas to flow circumferentially into the gas flow path.

[0219] Therefore, the gas supplied circumferentially to the gas flow path circumferentially swirls within the gas flow path. Since a rectifying structure is provided in the gas flow path in a section different from the gas storage section, the gas within the gas flow path is rectified. This improves the diffusion uniformity of the gas ejected from the gas nozzle.

[0220] Although embodiments of the present invention have been described in detail, they are merely specific examples used to clarify the technical content of the present invention. The present invention should not be interpreted as limited to the specific examples, and the scope of the present invention is limited only by the scope of the appended claims.

Claims

1. A substrate processing apparatus comprising: a rotary chuck that holds a substrate; and a fluid nozzle that is disposed facing a main surface of a substrate held by the rotary chuck; and the fluid nozzle includes: a gas ejection port that ejects gas radially from a center side toward a peripheral edge side of the main surface of the substrate; and a gas flow path that supplies gas to the gas ejection port, has a cylindrical shape along a cross direction that intersects the main surface of the substrate; and the gas flow path has: a gas accumulation portion whose cross-sectional area is larger than other portions in the gas flow path; and a flow regulating structure that is provided in a portion of the gas flow path other than the gas accumulation portion, and regulates gas flow within the gas flow path; the flow regulating structure has a plurality of first shield portions that are provided at intervals from each other in a circumferential direction of the gas flow path, and shield movement of gas toward a downstream side of the gas flow path; portions of the flow regulating structure that are upstream and downstream of the gas flow path are cylindrical.

2. The substrate processing apparatus according to claim 1, wherein the fluid nozzle includes: a plurality of the gas ejection ports, and a plurality of the gas flow paths that respectively supply gas to the plurality of the gas ejection ports, and the plurality of the gas ejection ports have: a first gas ejection port; and a second gas ejection port that is provided at a position that is farther from the main surface of the substrate in the cross direction than the first gas ejection port.

3. The substrate processing apparatus according to claim 2, wherein a width of the second gas ejection port in the cross direction is narrower than a width of the first gas ejection port in the cross direction.

4. The substrate processing apparatus according to claim 2, wherein a width of the second gas ejection port in the cross direction is wider than a width of the first gas ejection port in the cross direction.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein the flow regulating structure further has a plurality of second shield portions that are provided farther downstream of the gas flow path than the plurality of the first shield portions, and shield movement of gas toward a downstream side of the gas flow path, positions of the plurality of the second shield portions in the circumferential direction are offset from positions of the plurality of the first shield portions in the circumferential direction.

6. The substrate processing apparatus according to any one of claims 1 to 4, wherein the gas flow path further has: a straight flow path that extends straight in the cross direction, and a curved flow path that curves a middle portion of the straight flow path.

7. The substrate processing apparatus according to claim 6, wherein the curved flow path has a flow path that is a top view circular ring shape that expands in a horizontal direction.

8. The substrate processing apparatus according to claim 6, wherein the flow regulating structure is provided in the curved flow path.

9. The substrate processing apparatus according to any one of claims 1 to 4, wherein the fluid nozzle further includes a nozzle body that has a facing surface that faces the main surface of the substrate, and a side surface that is joined to the facing surface, and in which the gas flow path is formed. ​ ​ ​ ​ 10. The substrate processing apparatus according to claim 9, wherein the fluid nozzle further comprises a center gas ejection port that ejects gas toward a center of the main surface of the substrate, a conical frustum-shaped recessed portion that is recessed toward a direction away from the main surface of the substrate is formed on the facing surface of the fluid nozzle, the center gas ejection port is located in the recessed portion.

11. The substrate processing apparatus according to claim 10, wherein the fluid nozzle further comprises a processing liquid ejection port that ejects processing liquid toward the main surface of the substrate, located in the recessed portion.

12. The substrate processing apparatus according to claim 9, wherein the nozzle body comprises a plurality of flow path partition members each having a surface that partitions the gas flow path.

13. The substrate processing apparatus according to any one of claims 1 to 4, further comprising a gas pipe connected to the fluid nozzle that supplies gas to the gas flow path from a direction parallel to the main surface of the substrate.

14. A substrate processing method comprising: a substrate holding step of holding a substrate; a processing liquid supplying step of supplying processing liquid to an upper surface of the substrate; and The gas flow forming step forms a radial gas flow from the center side toward the periphery side of the upper surface of the substrate by ejecting the gas from the gas ejection port of the fluid nozzle at least after the start of the treatment liquid supplying step, wherein the fluid nozzle has the gas ejection port that ejects gas, and a gas flow path that supplies gas to the gas ejection port, in which a gas accumulation portion having a larger cross-sectional area than other portions in the gas flow path, and a flow regulating structure that is provided in a portion of the gas flow path different from the gas accumulation portion and regulates the flow of gas in the gas flow path are provided; and the flow regulating structure has a plurality of first shield portions provided at intervals from each other in a circumferential direction of the gas flow path, that shield movement of gas to a downstream side of the gas flow path; portions of the flow regulating structure upstream and downstream of the gas flow path are cylindrical.

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