Apparatus and method for processing a substrate

Abstract

The inventive concept provides a substrate processing apparatus. In an embodiment, the substrate processing apparatus comprises a liquid processing chamber for performing a liquid process on a substrate therein, a drying chamber for performing a drying process on the liquid processed substrate, a transfer device for transferring the substrate between the liquid processing chamber and the drying chamber, and a controller for controlling the liquid processing chamber and the transfer device, wherein the transfer device comprises a transfer robot having a hand for placing the substrate thereon, and a heating member for heating the substrate, and wherein the controller controls the transfer device such that the heating member of the transfer device heats liquid on the substrate to a first temperature before the transfer device transfers the substrate taken from the liquid processing chamber to the drying chamber.

Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to fluid supply units and substrate processing equipment, and more specifically, to fluid supply units for supplying supercritical fluids and substrate processing equipment having said fluid supply units. Background Technology

[0002] Generally, semiconductor devices are manufactured from substrates such as wafers. Specifically, semiconductor devices are manufactured by forming fine circuit patterns on the upper surface of the substrate through processes such as deposition, photolithography, cleaning, drying, and etching. Since various foreign objects adhere to the top surface of the substrate on which the circuit patterns are formed during the above processes, a cleaning process to remove foreign objects from the substrate is performed between processes.

[0003] Generally, the cleaning process includes chemical treatment to remove foreign matter from the substrate by supplying chemicals to the substrate, rinsing treatment to remove residual chemicals from the substrate by supplying purified water to the substrate, and drying treatment to remove residual purified water from the substrate.

[0004] Supercritical fluids are used to dry substrates. For example, an organic solvent is used instead of pure water on the substrate, and supercritical fluid is supplied to the top surface of the substrate in a high-pressure chamber to dissolve and remove residual organic solvents from the substrate. If isopropanol (IPA) is used as the organic solvent, carbon dioxide (CO2) is used as the supercritical fluid because it has a relatively low critical temperature and critical pressure and dissolves IPA well.

[0005] The substrate is treated using a supercritical fluid as follows: When the substrate is placed in a high-pressure chamber, supercritical carbon dioxide is supplied to pressurize the interior of the chamber, and then the substrate is treated with supercritical fluid while the high-pressure chamber is repeatedly vented. After the substrate is treated, the high-pressure chamber is vented and depressurized.

[0006] IPA needs to be used at high temperatures to increase the reactivity between carbon dioxide and IPA. However, if IPA is supplied at high temperatures when it is supplied to the substrate, there is a problem that the IPA may evaporate during the supply process and leave stains on the substrate. Summary of the Invention

[0007] The purpose of this invention is to provide a substrate processing apparatus and a substrate processing method that allows for easy replacement of the atmosphere in the processing chamber where the substrate is processed using supercritical fluid.

[0008] The purpose of this invention is not limited thereto, and other purposes not mentioned will be clearly understood by those skilled in the art from the following statements.

[0009] An embodiment of the present invention provides a substrate processing apparatus. In an embodiment, the apparatus includes: a liquid processing chamber for liquid processing of a substrate therein; a drying chamber for drying the liquid-treated substrate; a transfer device for transferring the substrate between the liquid processing chamber and the drying chamber; and a controller for controlling the liquid processing chamber and the transfer device, wherein the transfer device includes: a transfer robot having a hand for placing the substrate thereon; and a heating member for heating the substrate, and wherein the controller controls the transfer device such that, before the transfer device transfers the substrate removed from the liquid processing chamber to the drying chamber, the heating member of the transfer device heats the liquid on the substrate to a first temperature.

[0010] In one embodiment, the heating element is a heater disposed at the hand.

[0011] In one embodiment, the heating element is configured as a heating chamber between the liquid processing chamber and the drying chamber, and the heating chamber includes: a housing having an opening that allows the hand to enter and exit; a support unit for placing the substrate thereon; and a gas supply device for supplying high-temperature gas to the interior space of the housing.

[0012] In one embodiment, the heating element is configured as a heating plate having a heater and disposed between the liquid treatment chamber and the drying chamber.

[0013] In one embodiment, the controller controls the liquid processing chamber to supply the liquid at a second temperature to the substrate within the liquid processing chamber, and controls the transfer device to heat the liquid on the substrate to a first temperature, which is higher than the second temperature, using the heating element.

[0014] In this embodiment, the second temperature is a temperature higher than room temperature.

[0015] In this embodiment, the liquid is an organic solvent, and a supercritical fluid is supplied to the interior of the drying chamber.

[0016] In one embodiment, the first temperature is below the boiling point of the liquid.

[0017] An embodiment of the present invention provides a substrate processing method. In an embodiment, the method includes: transferring a substrate from a liquid processing chamber to a drying chamber, wherein the substrate has been liquid-processed in the liquid processing chamber by supplying liquid onto the substrate; and drying the liquid-processed substrate by supplying fluid into the drying chamber, wherein the liquid on the liquid-processed substrate is heated to a first temperature prior to the drying process.

[0018] In one embodiment, the liquid on the substrate is heated to the first temperature before the substrate is placed in the drying chamber.

[0019] In one embodiment, the liquid on the substrate is heated to the first temperature during a period after the substrate is substantially removed from the liquid processing chamber and before it is substantially placed into the drying chamber.

[0020] In one embodiment, the liquid on the substrate is heated to the first temperature on a transfer device that transfers the substrate between the liquid treatment chamber and the drying chamber.

[0021] In one embodiment, the liquid on the substrate is heated to the first temperature in a heating chamber located between the liquid processing chamber and the drying chamber.

[0022] In one embodiment, the liquid in the liquid processing chamber is supplied at a second temperature, and during a period of time after the substrate is substantially removed from the liquid processing chamber and before it is substantially placed in the drying chamber, the liquid on the substrate is heated to the first temperature, and the first temperature is higher than the second temperature.

[0023] In this embodiment, the second temperature is higher than room temperature.

[0024] In one embodiment, the first temperature is below the boiling point of the liquid.

[0025] In this embodiment, the liquid is an organic solvent and the fluid is provided as a supercritical fluid.

[0026] An embodiment of the present invention provides a substrate processing method. In an embodiment, the method includes: liquid processing the substrate by supplying an organic solvent onto the substrate in a liquid processing chamber; transferring the substrate to a drying chamber after liquid processing; and drying the substrate by supplying a supercritical fluid into the interior of the drying chamber, wherein the organic solvent on the substrate is heated to below the boiling point of the organic solvent before the substrate is placed in the drying chamber.

[0027] In one embodiment, the liquid on the substrate is heated to the first temperature on a transfer device that transfers the substrate between the liquid treatment chamber and the drying chamber.

[0028] In one embodiment, the liquid on the substrate is heated to the first temperature in a heating chamber located between the liquid processing chamber and the drying chamber.

[0029] According to an embodiment of the invention, the adhesive layer attached to the processing chamber can be easily removed.

[0030] Additionally, according to embodiments of the present invention, it is possible to prevent waste from being dispersed during the removal of the adhesive layer attached to the processing chamber.

[0031] The effects of this invention are not limited to those described above, and any effects not mentioned will be clearly understood by those skilled in the art to which this invention pertains based on this specification and the accompanying drawings. Attached Figure Description

[0032] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, the same reference numerals in the various drawings refer to the same parts, and wherein:

[0033] Figure 1 This is a schematic top view illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0034] Figure 2 It is shown schematically. Figure 1 A view of the liquid handling device.

[0035] Figure 3 It is shown schematically. Figure 1 A view of an embodiment of a supercritical device.

[0036] Figure 4 It is shown schematically. Figure 1 A view of an embodiment of the hand.

[0037] Figure 5 This is a schematic view of a heating plate according to an embodiment of the concept of the present invention.

[0038] Figure 6 This is a schematic view of a heating chamber according to an embodiment of the concept of the present invention.

[0039] Figures 7 to 10 Each view is a flowchart illustrating an embodiment of a substrate processing method according to the present invention. Detailed Implementation

[0040] The inventive concept can be modified and taken in various forms, and specific embodiments of the inventive concept will be shown and described in detail in the accompanying drawings. However, the embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations and equivalent substitutions included within the spirit and scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies may be omitted where it may obscure the essence of the inventive concept.

[0041] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, plural forms are intended to be included unless a specific quantity is specified, unless the context clearly indicates otherwise. It should also be understood that, when used in this specification, the terms “comprise” and / or “comprising” specify the presence of stated features, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or combinations thereof. As used herein, the term “and / or” includes any and all combinations of one or more associated listed items. Additionally, the term “exemplary” is intended to refer to an example or illustration.

[0042] It should be understood that although the terms first, second, third, etc., may be used herein to describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or section from another region, layer, or section. Therefore, without departing from the inventive concept, the first element, first component, first region, first layer, or first section discussed below may be referred to as a second element, second component, second region, second layer, or second section.

[0043] Figure 1 A substrate processing apparatus according to an embodiment of the present invention is shown. (Reference) Figure 1 The substrate processing apparatus includes a transposition module 10, a processing module 20, and a controller (not shown). According to an embodiment, the transposition module 10 and the processing module 20 are arranged sequentially. Hereinafter, the direction in which the transposition module 10 and the processing module 20 are arranged will be referred to as the first direction 92. The direction perpendicular to the first direction 92 when viewed from above will be referred to as the second direction, and the direction perpendicular to both the first direction 92 and the second direction 94 will be referred to as the third direction 96.

[0044] The transposition module 10 returns the substrate W from the container 80 containing the substrate W to the processing module 20, and obtains the processed substrate W from the processing module 20 for storage in the container 80. The transposition module 10 is configured to extend its length along a second direction 94. The transposition module 10 has a loading port 12 and a transposition frame 14. The transposition frame 14 is disposed between the loading port 12 and the processing module 20. The container 80 containing the substrate W is placed on the loading port 12. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be arranged along the second direction 94.

[0045] For container 80, a closed container, such as a front-opening unified pod (FOUP), can be used. Container 80 can be placed on loading port 12 by means of an elevated transfer device, an elevated conveyor, an automated guided vehicle, or by an operator.

[0046] The indexing frame 14 is equipped with an indexing robot 120. In the indexing frame 14, a guide rail 140 is configured to extend its length along a second direction 94, and the indexing robot 120 is movable on the guide rail 140. The indexing robot 120 includes a hand 122 on which a substrate W is placed, and the hand 122 is configured to be movable back and forth, rotatable about a third direction 96, and movable along the third direction 96. Multiple hands 122 are vertically separated, and the hands 122 can move back and forth independently of each other.

[0047] The processing module 20 includes a buffer unit 200, a transfer device 300, a liquid processing chamber 400, and a drying chamber 500. The buffer unit 200 provides temporary space for the substrate W brought into and removed from the processing module 20. The liquid processing chamber 400 supplies liquid to the substrate W to perform a liquid processing process on the substrate W. The drying chamber 500 performs a drying process to remove residual liquid from the substrate W. The transfer device 300 transfers the substrate W between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0048] The transfer device 300 can be arranged such that its length extends along a first direction 92. A buffer unit 200 can be placed between the indexing module 10 and the transfer device 300. A liquid handling chamber 400 and a drying chamber 500 can be disposed on the side of the transfer unit 300. The liquid handling chamber 400 and the transfer device 300 can be disposed along a second direction 94. The drying chamber 500 and the transfer device 300 can be disposed along a second direction 94. The buffer unit 200 can be located at one end of the transfer device 300.

[0049] In this embodiment, the liquid processing chamber 400 can be disposed on both sides of the transfer device 300, and the drying chamber 500 can be disposed on both sides of the transfer device 300. The liquid processing chamber 400 can be disposed closer to the buffer unit 200 than the drying chamber 500. On one side of the transfer device 300, the liquid processing chamber 400 can be arranged in an A×B array along the first direction 92 and the third direction 96 (A and B are natural numbers greater than 1 or 1, respectively). Additionally, on one side of the transfer device 300, the drying chamber 500 can be arranged in a C×D array along the first direction 92 and the third direction 96 (C and D are natural numbers greater than 1 or 1, respectively). Unlike the foregoing, only the liquid processing chamber 400 can be disposed on one side of the transfer device 300, and only the drying chamber 500 can be disposed on the other side.

[0050] The transfer device 300 includes a transfer robot 320 and a heating device. Within the transfer device 300, a guide rail 340 is configured to extend its length along a first direction 92, and the transfer robot 320 is configured to move along the guide rail 340. The transfer robot 320 includes a hand 322 on which a substrate W is placed, and the hand 322 is configured to move back and forth, rotate about a third direction 96, and move along the third direction 96. A plurality of hands 122 are vertically spaced apart, and the hands 122 are independently movable back and forth relative to each other. The heating device heats the liquid-treated substrate at a liquid treatment chamber 400. The heating device will be described later.

[0051] The buffer unit 200 has a plurality of buffers 220 on which a substrate W is placed. The buffers 220 can be positioned apart from each other along a third direction 96. The buffer unit 200 has an open front side and an open rear side. The front side faces the transposition module 10, and the rear side faces the transfer device 300. The transposition robot 120 can access the buffer unit 200 through the front side, and the transfer robot 320 can access the buffer unit 200 through the rear side.

[0052] Figure 2 It shows Figure 1 An embodiment of the liquid handling chamber 400. See reference. Figure 2 The liquid handling chamber 400 includes a housing 410, a cup 420, a support member 440, a liquid supply unit 460, a lifting / lowering unit 480, and a controller 40. The controller 40 controls the operation of the liquid supply unit 460, the support member 440, and the lifting / lowering unit 480. The housing 410 is generally rectangular in shape. The cup 420, the support member 440, and the liquid supply unit 460 are located within the housing 410.

[0053] The cup 420 has a processing space with an open upper portion, within which the substrate W undergoes liquid processing. A support member 440 supports the substrate W within the processing space. A liquid supply unit 460 supplies liquid to the substrate W supported by the support member 440. Various types of liquids can be provided and supplied sequentially to the substrate W. A lifting / lowering unit 480 adjusts the relative horizontal height between the cup 420 and the support member 440.

[0054] In one embodiment, the cup 420 has a plurality of collection bowls 422, 424, and 426. Each of the collection bowls 422, 424, and 426 has a collection space for collecting liquid used to process the substrate. Each collection bowl 422, 424, and 426 is configured in an annular shape surrounding the support member 440. When the liquid processing is performed, the processing liquid, dispersed due to the rotation of the substrate W, flows into the collection space through the inlets 422a, 424a, and 426a of each collection bowl 422, 424, and 426. In another embodiment, the cup 420 has a first collection bowl 422, a second collection bowl 424, and a third collection bowl 426. The first collection bowl 422 is configured to surround the support member 440, the second collection bowl 424 is configured to surround the first collection bowl 422, and the third collection bowl 426 is configured to surround the second collection bowl 424. The second inlet 424a that allows liquid to flow into the second collection bowl 424 may be located above the first inlet 422a that allows liquid to flow into the first collection bowl 422, and the third inlet 426a that allows liquid to flow into the third collection bowl 426 may be located above the second inlet 424a.

[0055] The support member 440 has a support plate 442 and a drive shaft 444. The upper surface of the support plate 442 is generally configured as a disk shape and may have a diameter larger than that of the substrate W. At the center of the support plate 442, a support pin 442a is provided to support the bottom surface of the substrate W, and the upper end of the support pin 442a is configured to protrude from the support plate 442, so that the substrate W is placed separately from the support plate 442. A chuck pin 442b is provided at the edge of the support plate 442.

[0056] The chuck pin 442b is configured to project upward from the support plate 442, thereby supporting (adjacent to) the side of the substrate W, so that the substrate W will not detach from the support member 440 when the substrate W rotates. The drive shaft 444 is driven by the drive member 446 and is connected to the center of the bottom surface of the substrate W, causing the support plate 442 to rotate relative to its central axis.

[0057] In an embodiment, the liquid supply unit 460 has a first nozzle 462, a second nozzle 464, and a third nozzle 466. The first nozzle 462 supplies a first liquid to the substrate W. The first liquid may be a liquid that removes residual layers or foreign matter from the substrate W. The second nozzle 464 supplies a second liquid to the substrate W. The second liquid is well soluble in the third liquid. For example, the second liquid is more soluble in the third liquid than in the first liquid. The second liquid can neutralize the first liquid supplied to the substrate W. In addition, the second liquid can neutralize the first liquid and simultaneously dissolve better in the third liquid than the first liquid.

[0058] In an embodiment, the second liquid may be water. A third nozzle 466 supplies a third liquid to the substrate W. The third liquid is readily soluble in a supercritical fluid used in the drying chamber 500. For example, the third liquid may dissolve better in a supercritical fluid used in the drying chamber 500 than in the second liquid. In an embodiment, the third liquid may be an organic solvent. The organic solvent may be isopropanol (IPA). In an embodiment, the supercritical fluid may be carbon dioxide.

[0059] The first nozzle 462, the second nozzle 464, and the third nozzle 466 are supported by different arms 461, and these arms 461 can move independently. Optionally, the first nozzle 462, the second nozzle 464, and the third nozzle 466 can be mounted on the same arm and move simultaneously.

[0060] The lifting / lowering unit 480 moves the cup 420 in the up / down direction. The relative horizontal height between the cup 420 and the substrate W is changed by the vertical movement of the cup 420. Therefore, the collection bowls 422, 424, and 426 for collecting the processed liquid change according to the type of liquid supplied to the substrate W, and thus the liquid can be collected separately. Unlike the foregoing, the cup 420 is fixedly mounted, and the lifting / lowering unit 480 can vertically move the support member 440.

[0061] Figure 3 It shows Figure 1 An embodiment of the drying chamber 500 is described. According to an embodiment, the drying chamber 500 uses a supercritical fluid to remove liquid from the substrate W. According to one embodiment, the liquid on the substrate W is isopropanol (IPA). The drying chamber 500 supplies supercritical fluid to the substrate and dissolves the IPA on the substrate W in the supercritical fluid to remove the IPA from the substrate W.

[0062] refer to Figure 3The drying chamber 500 includes a processing chamber 520, a liquid supply unit 560, and an exhaust unit 550. The processing chamber 520 provides a processing space 502 in which a cleaning process for cleaning a substrate is performed. The processing chamber 520 has a first body 522 and a second body 524. The first body 522 and the second body 524 are combined to provide the processing space 502. In an embodiment, the first body 522 is positioned above the second body 524. In an embodiment, the processing chamber 520 is movable between an open position and a closed position. The open position is a position where the first body 522 and the second body 524 are spaced apart, and the closed position is a position where at least one of the first body 522 or the second body 524 is moved toward each other and adheres to each other to seal the processing space 502. In an embodiment, the position of the first body 522 may be fixed, and the second body 524 may be raised or lowered by a drive member 590 such as a cylinder. In one embodiment, when the second body 524 is spaced apart from the first body 522, the processing space 502 is open, and at this time, the substrate W is placed in or removed. Optionally, the position of the second body 524 can be fixed, and the first body 522 can be raised or lowered by a drive member 590 such as a cylinder.

[0063] During the cleaning process of the substrate W within the cleaning processing space 502, the second body 524 is in close contact with the first body 522, thus sealing the processing space 502 from the outside environment. A heater 525 is disposed within the wall of the processing chamber 520. The heater 525 heats the processing space 502 of the processing chamber 520, maintaining the fluid supplied to the interior of the processing chamber 520 in a supercritical state. An atmosphere is formed inside the processing space 502 by the supercritical fluid.

[0064] The support unit 580 supports the substrate W within the processing space 502 of the processing chamber 520. The substrate W, brought into the processing space 502 of the processing chamber 520, is placed on the support unit 580. In an embodiment, the substrate W is supported by the support unit 580 with the patterned surface of the substrate W facing upwards.

[0065] A fluid supply unit 560 supplies cleaning fluid for substrate processing to the processing space 502 of the processing chamber 520. According to an embodiment, the fluid supply unit 560 has a main supply line 562, a top supply line 564, and a bottom supply line 566. The main supply line 562 is connected to a fluid supply source (not shown) to supply supercritical fluid to the processing space 502. The top supply line 564 and the bottom supply line 566 branch off from the main supply line 562. The top supply line 564 is connected to a top supply pipe 565. The bottom supply line 566 is connected to a bottom supply pipe 567. In an embodiment, the top supply pipe 565 is formed at the center of the first body 522, and the bottom supply pipe 567 is formed at an off-center location away from the center of the second body 524. Therefore, the top supply line 564 can be connected to the center of the first body 522, and the bottom supply line 566 can be connected to an off-center location away from the center of the second body 524. A top supply valve 563 is installed at the top supply line 564. The top supply valve 563 controls whether supercritical fluid is supplied to the processing space 502 through the top supply line 564 and the supply flow rate. The bottom supply valve 568 is installed at the bottom supply line 566. The bottom supply valve 568 controls whether supercritical fluid is supplied to the processing space 502 through the bottom supply line 566 and the supply flow rate.

[0066] The exhaust unit 550 includes an exhaust pipe 551 and an exhaust line 552. In an embodiment, the exhaust line 552 is connected to the second body 524. The exhaust line 552 is connected to the exhaust pipe 551. In an embodiment, the exhaust pipe 551 may be formed at the center of the second body 524. Supercritical fluid in the processing space 502 of the processing chamber 520 is discharged to the outside of the processing chamber 520 through the exhaust line 552. An exhaust valve 555 is installed at the exhaust line 552. The exhaust valve 555 controls whether the exhaust line 552 is vented.

[0067] The following text provides information on... Figure 1 The heating element of the transfer device 300 will refer to Figures 4 to 6 describe.

[0068] Figure 4 It is shown schematically. Figure 1 A view of an embodiment of hand 322. Figure 5 This is a view showing a heating plate 610 according to an embodiment of the concept of the present invention, and Figure 6 This is a view showing a heating chamber 700 according to an embodiment of the concept of the present invention.

[0069] In this embodiment, the heating element is disposed in the hand 322, such as... Figure 4 As shown. For example, the heating element may be a heater 321 disposed within the hand 322.

[0070] In an embodiment, the heating element 600 is provided as a heating plate 610 having a heater 612, such as Figure 5 As shown. The heating plate 610 is provided with a mounting surface on which a substrate W can be placed. In an embodiment, the heating plate 610 may be disposed between the liquid processing chamber 400 and the drying chamber 500. In an embodiment, the heating plate 610 may be located along the path through which the transfer device transfers the substrate W from the liquid processing chamber 400 to the drying chamber 500. For example, the heating plate 610 may be located between the drying chambers 500 based on a second direction. The substrate W is transferred between the heating plate 610 and the drying chamber 500 by a transfer robot 320 through an opening 515 formed in the housing 510 of the drying chamber 500.

[0071] In this embodiment, the heating element can be as follows: Figure 6 The heating chamber 700 is shown in the form of a heating chamber 700. In an embodiment, the heating chamber 700 may be disposed between the liquid processing chamber 400 and the drying chamber 500, or between the drying chamber 500, such as the heating plate 610. In an embodiment, the heating chamber 700 may be located on the path taken by the transfer device to transfer the substrate W from the liquid processing chamber 400 to the drying chamber 500. For example, the heating chamber 700 may be located between the drying chambers 500 based on a second direction.

[0072] The heating chamber 700 includes a housing 710, a support unit 720, and a gas supply device 730. The housing 710 has an internal space. An opening 712 is formed in the housing 710 through which a hand 322 can enter and exit. The hand 322 removes the substrate W from the heating chamber 700 through the opening 712. The support unit 720 is disposed within the housing 710. The support unit 720 has a mounting surface on which the substrate W is placed. The gas supply device 730 supplies high-temperature gas to the internal space of the housing 710. The gas supply device 730 includes a gas supply source 732, a gas supply line 734, and a supply valve 736. In this embodiment, the gas can be supplied as air. The high-temperature gas is stored in the gas supply source 732. The gas is supplied to the housing 710 through the gas supply line 734. The supply valve 736 controls whether gas is supplied to the housing 710 and the supply flow rate.

[0073] In the following text, reference will be made to Figures 7 to 10 A substrate processing method according to the present invention is described. Figure 7 This is a schematic view illustrating the substrate processing method of the present invention, and Figures 8 to 10 Show each Figure 7 Different embodiments of the substrate processing method are described below. In this context, the liquid treatment of substrate W will be described as... Figure 1 An organic solvent, such as isopropanol, is supplied to the substrate W in the liquid processing chamber 400.

[0074] refer to Figure 7 In the substrate processing method of the present invention, after liquid treatment of substrate W and before drying treatment of substrate W, substrate W is transferred and heated. In an embodiment, in the substrate processing method of the present invention, the organic solvent on substrate W is heated to a first temperature before substrate W is brought into drying chamber 500.

[0075] 1) Example 1 (see Figure 8 )

[0076] First, substrate W is liquid-treated in liquid treatment chamber 400 by supplying an organic solvent onto it. Afterward, substrate W is removed from liquid treatment chamber 400. As transfer robot 320 transfers substrate W from liquid treatment chamber 400 to drying chamber 500, the organic solvent on substrate W is heated to a first temperature. In an embodiment, substrate W is heated on hand 322 while being transferred to drying chamber 500. In an embodiment, the first temperature is below the boiling point of the organic solvent. Once the organic solvent on substrate W has been heated to the first temperature, substrate W is brought into drying chamber 500.

[0077] 2) Example 2 (see Figure 9 )

[0078] First, substrate W is liquid-treated by supplying an organic solvent to it in a liquid treatment chamber 400. Then, substrate W is removed from the liquid treatment chamber 400. A transfer robot 320 removes substrate W from the liquid treatment chamber 400 and carries it into a heating chamber 700. High-temperature gas is supplied to the heating chamber 700 to heat the organic solvent on substrate W to a first temperature. Selectively, the transfer robot 320 removes substrate W from the liquid treatment chamber 400 and positions it on a heating plate 610. Substrate W placed on the heating plate 610 is heated by a heater until the organic solvent on substrate W reaches the first temperature. Once the organic solvent on substrate W has been heated to the first temperature, substrate W is carried into a drying chamber 500.

[0079] 3) Example 3 (see Figure 10 )

[0080] An organic solvent at a second temperature is supplied to the substrate W in a liquid processing chamber 400. In an embodiment, the second temperature is above room temperature and below a first temperature. Supplying the organic solvent to the substrate W at a temperature above room temperature allows the organic solvent and the supercritical fluid to mix easily in the drying chamber 500. However, when the organic solvent is supplied at excessively high temperatures, evaporation occurs simultaneously with its supply to the substrate W, and therefore the temperature of the organic solvent does not rise too high above room temperature. In an embodiment, when the organic solvent is isopropanol, the second temperature can be set between 35 and 45 degrees Celsius.

[0081] After liquid treatment of substrate W, substrate W is removed from liquid treatment chamber 400. Thereafter, as described in Example 1 or Example 2, the organic solvent on substrate W is heated to a first temperature before being brought into drying chamber 500.

[0082] According to the present invention, an advantage is that the organic solvent on the substrate W is heated before it is introduced into the drying chamber 500, thereby facilitating the mixing of the organic solvent with the supercritical fluid. Therefore, the advantage is that the processing time of the substrate W in the drying chamber 500 can be shortened, and the organic solvent can be easily removed with the supercritical fluid.

[0083] Furthermore, according to the present invention, instead of supplying the high-temperature organic solvent to the substrate W in the liquid processing chamber 400, the organic solvent taken out from the liquid processing chamber 400 is heated. Therefore, there is an advantage in preventing the evaporation of the organic solvent when it is supplied to the substrate W. Therefore, there is an advantage in preventing stains from appearing on the substrate W.

[0084] Furthermore, according to the present invention, the organic solvent is heated to its boiling point or lower, for example, just below the boiling point. Therefore, there is an advantage in preventing the organic solvent from evaporating during the process.

[0085] The effects of this invention are not limited to those described above, and any effects not mentioned will be clearly understood by those skilled in the art based on this specification and the accompanying drawings.

[0086] Although preferred embodiments of the inventive concept have been shown and described up to now, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept relates can implement the inventive concept differently without departing from the essence of the inventive concept as claimed in the claims, and should not be interpreted or modified separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing apparatus comprising: a liquid processing chamber for performing a liquid treatment on a substrate therein; a drying chamber for performing a drying treatment on the liquid-treated substrate with a supercritical fluid; a transfer device for transferring the substrate between the liquid processing chamber and the drying chamber; and a controller for controlling the liquid processing chamber and the transfer device, wherein the transfer device comprises: a transfer robot having a hand for placing the substrate thereon; and a heating member for heating the substrate, and wherein the controller controls the transfer device such that the heating member of the transfer device heats a liquid on the substrate to a first temperature before the transfer device transfers the substrate taken out from the liquid processing chamber to the drying chamber, the liquid is an organic solvent, and the first temperature is lower than a boiling point of the liquid.

2. The apparatus according to claim 1, wherein the heating member is a heater provided at the hand.

3. The apparatus according to claim 1, wherein the heating member is provided as a heating chamber between the liquid processing chamber and the drying chamber, and the heating chamber comprises: a housing having an opening allowing the hand to go in and out; a support unit for placing the substrate thereon; and a gas supply device for supplying a high-temperature gas to an inner space of the housing.

4. The apparatus according to claim 1, wherein the heating member is provided as a heating plate having a heater therein and provided between the liquid processing chamber and the drying chamber.

5. The apparatus according to claim 1, wherein the controller controls the liquid processing chamber so as to supply the liquid at a second temperature to the substrate within the liquid processing chamber, and controls the transfer device so as to cause the heating member to heat the liquid on the substrate to the first temperature, the first temperature being higher than the second temperature.

6. The apparatus according to claim 5, wherein the second temperature is a temperature higher than room temperature.

7. A substrate processing method comprising: transferring a substrate from a liquid processing chamber to a drying chamber, wherein the substrate has been subjected to a liquid treatment in the liquid processing chamber by supplying a liquid to the substrate; and performing a drying treatment on the liquid-treated substrate by supplying a fluid into the drying chamber, wherein the liquid on the substrate is heated to a first temperature before the drying treatment on the liquid-treated substrate, the liquid is an organic solvent, the fluid is a supercritical fluid, and the first temperature is lower than a boiling point of the liquid.

8. The method according to claim 7, wherein the liquid on the substrate is heated to the first temperature before the substrate is put into the drying chamber.

9. The method according to claim 8, wherein the liquid on the substrate is heated to the first temperature during a period after the substrate is substantially taken out from the liquid processing chamber and before being substantially put into the drying chamber. ​ ​ ​ ​ 10. The method according to claim 9, wherein the liquid on the substrate is heated to the first temperature on a transfer device, wherein the transfer device transfers the substrate between the liquid treatment chamber and the drying chamber.

11. The method according to claim 8, wherein the liquid on the substrate is heated to the first temperature in a heating chamber provided between the liquid treatment chamber and the drying chamber.

12. The method according to claim 8, wherein the liquid in the liquid treatment chamber is supplied at a second temperature, the liquid on the substrate is heated to the first temperature during a period of time after the substrate is substantially removed from the liquid treatment chamber and before being substantially put into the drying chamber, and the first temperature is higher than the second temperature.

13. The method according to claim 12, wherein the second temperature is higher than room temperature.

14. A substrate processing method using the substrate processing apparatus according to claim 1, the method comprising: liquid treating a substrate by supplying an organic solvent to the substrate in a liquid treatment chamber; after the liquid treating of a substrate, transferring the substrate to a drying chamber, and drying treating the substrate by supplying a supercritical fluid to an inside of the drying chamber, and wherein the organic solvent on the substrate is heated to below a boiling point of the organic solvent before the substrate is put into the drying chamber.

15. The method according to claim 14, wherein the liquid on the substrate is heated to the first temperature on a transfer device, wherein the transfer device transfers the substrate between the liquid treatment chamber and the drying chamber.

16. The method according to claim 14, wherein the liquid on the substrate is heated to the first temperature in a heating chamber provided between the liquid treatment chamber and the drying chamber.

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