Transparent display device

Abstract

A transparent display device includes a substrate on which a pixel including a first light emitting area, a second light emitting area, and a third light emitting area arranged along a first direction, and a first transparent area and a second transparent area are defined, a light emitting diode provided in each of the first light emitting area, the second light emitting area, and the third light emitting area and including a first electrode, a light emitting layer, and a second electrode, and an auxiliary electrode extending in a second direction perpendicular to the first direction and electrically connected to the second electrode, wherein the first light emitting area and the auxiliary electrode are disposed between the first transparent area and the second transparent area, and the second transparent area includes a first portion between the first light emitting area and the second light emitting area, and wherein the first transparent area has a higher transmittance than the second transparent area.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0184998, filed on December 28, 2020, which is incorporated herein by reference in its entirety. Technical Field

[0003] This disclosure relates to display devices, and more specifically to transparent display devices having a light-emitting area and a transparent area. Background Technology

[0004] As a type of flat panel display device, electroluminescent display devices have a wider viewing angle due to their self-illumination compared to liquid crystal display devices, and also have the advantages of being thin, lightweight, and low power consumption because they do not require a backlight unit.

[0005] Furthermore, electroluminescent display devices are driven by low-voltage direct current (DC) and have a fast response time. In addition, electroluminescent display devices are highly resistant to external influences due to their solid-state components and can be used over a wide temperature range. Moreover, electroluminescent display devices can be manufactured at low cost.

[0006] Recently, transparent display devices utilizing electroluminescent display technology have been widely developed. A transparent display device is one where the background behind the screen is visible. Therefore, it is possible to display image information and the surrounding environment simultaneously.

[0007] A transparent display device using an electroluminescent display includes multiple pixels, each pixel having multiple light-emitting areas. By selectively driving the multiple light-emitting areas, various color images can be displayed.

[0008] An luminescent layer is set in each luminescent region, and each luminescent layer is formed by a vacuum thermal evaporation process that selectively deposits luminescent materials using a fine metal mask (FMM).

[0009] However, in transparent display devices that use electroluminescent display devices, the light-emitting area is relatively small, making it difficult to form a light-emitting layer through an evaporation process.

[0010] Furthermore, the evaporation process increases manufacturing costs due to mask preparation, and issues arise when applied to large-size and high-definition display devices due to mask manufacturing variations, sagging, and shadowing effects. Summary of the Invention

[0011] Therefore, this disclosure relates to a transparent display device that substantially avoids one or more problems arising from the limitations and disadvantages of related technologies.

[0012] The purpose of this disclosure is to provide a transparent display device with large size and high definition.

[0013] Additional features and advantages of this disclosure will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of this disclosure. The purposes and other advantages of this disclosure will be realized and attained through the structures particularly pointed out in the disclosure.

[0014] To achieve these and other advantages, and for the purposes of this disclosure, as embodied and broadly described herein, a transparent display device is provided, comprising: a substrate defining pixels thereon including a first light-emitting region, a second light-emitting region, and a third light-emitting region arranged along a first direction, and a first transparent region and a second transparent region; a light-emitting diode disposed in each of the first, second, and third light-emitting regions and including a first electrode, a light-emitting layer, and a second electrode; and an auxiliary electrode extending in a second direction perpendicular to the first direction and electrically connected to the second electrode, wherein the first light-emitting region and the auxiliary electrode are disposed between the first transparent region and the second transparent region, and the second transparent region includes a first portion between the first light-emitting region and the second light-emitting region, and wherein the first transparent region has a higher transmittance than the second transparent region.

[0015] It should be understood that the preceding general description and the following detailed description are exemplary and illustrative, and are intended to provide further explanation of the claimed contents of this disclosure. Attached Figure Description

[0016] The accompanying drawings are included to provide a further understanding of this disclosure and are incorporated in and form a part of this specification. These drawings illustrate embodiments of the disclosure and, together with the specification, serve to explain the principles of the disclosure.

[0017] Figure 1 This is a circuit diagram of a pixel of a transparent display device according to an embodiment of the present disclosure.

[0018] Figure 2 This is a schematic plan view of a transparent display device according to a first embodiment of the present disclosure.

[0019] Figure 3 This is a schematic cross-sectional view of a transparent display device according to a first embodiment of the present disclosure, and corresponds to... Figure 2 The line I-I'.

[0020] Figure 4 This is a schematic plan view of the embankment structure of a transparent display device according to the first embodiment of the present disclosure.

[0021] Figure 5 Is with Figure 4 The cross-sectional view corresponding to line II-II'.

[0022] Figure 6 Is with Figure 4 The cross-sectional view corresponding to line III-III'.

[0023] Figure 7 This is a schematic plan view of a transparent display device according to a second embodiment of the present disclosure.

[0024] Figure 8 This is a schematic plan view of the embankment structure of a transparent display device according to the second embodiment of the present disclosure.

[0025] Figure 9 Is with Figure 8 The cross-sectional view corresponding to line IV-IV'.

[0026] Figure 10 Is with Figure 8 The cross-sectional view corresponding to line V-V'.

[0027] Figure 11 Is with Figure 8 The cross-sectional view corresponding to line VI-VI'. Detailed Implementation

[0028] Exemplary embodiments of this disclosure will now be described in detail, examples of which are shown in the accompanying drawings.

[0029] A transparent display device according to embodiments of the present disclosure displays an image using an electroluminescent display device. The transparent display device using an electroluminescent display device includes a plurality of pixels for displaying the image, and each of the plurality of pixels includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. The first sub-pixel, the second sub-pixel, and the third sub-pixel may have… Figure 1 The configuration shown.

[0030] Figure 1 This is a circuit diagram of a pixel of a transparent display device according to an embodiment of the present disclosure.

[0031] exist Figure 1 In this embodiment of the transparent display device, multiple gate lines and multiple data lines intersect each other to define sub-pixels. Specifically, in Figure 1In the example, the gate line GL and the data line DL intersect each other to define a first sub-pixel P1, a second sub-pixel P2, and a third sub-pixel P3. Each of the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 includes a light-emitting region EA and a transparent region TA. Therefore, a pixel can include three light-emitting regions EA and three transparent regions TA.

[0032] Alternatively, the transparent regions TA of the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 can be connected to each other and set as one. That is, a pixel can include three emitting regions EA and one transparent region TA, but is not limited to this. For example, the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 can be a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively.

[0033] According to embodiments of the present disclosure, a transparent display device displays image information through a light-emitting area EA while simultaneously displaying surrounding environmental information, such as a background, through a transparent area TA.

[0034] A switching thin-film transistor T1, a driving thin-film transistor T2, a storage capacitor Cst, and a light-emitting diode De are formed in the light-emitting region EA of each of the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3.

[0035] More specifically, the gate line GL extends horizontally, and the data line DL extends vertically. The first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 are arranged sequentially in the horizontal direction. The light-emitting region EA and the transparent region TA of each sub-pixel P1, P2, and P3 can be arranged vertically.

[0036] In the light-emitting region EA of each sub-pixel P1, P2, and P3, the gate electrode of the switching thin-film transistor T1 is connected to the gate line GL, and the source electrode of the switching thin-film transistor T1 is connected to the data line DL. The gate electrode of the driving thin-film transistor T2 is connected to the drain electrode of the switching thin-film transistor T1, and the source electrode of the driving thin-film transistor T2 is connected to the high-voltage power supply VDD. The anode of the light-emitting diode De is connected to the drain electrode of the driving thin-film transistor T2, and the cathode of the light-emitting diode De is connected to the low-voltage power supply VSS. The storage capacitor Cst is connected to the gate and drain electrodes of the driving thin-film transistor T2.

[0037] A transparent display device using an electroluminescent display is driven to display an image. For example, when a gate signal applied through the gate line GL turns on the switching thin-film transistor T1, a data signal from the data line DL is applied through the switching thin-film transistor T1 to the gate electrode of the driving thin-film transistor T2 and the electrode of the storage capacitor Cst.

[0038] When the data signal turns on the driving thin-film transistor T2, the current flowing through the light-emitting diode De is controlled, thereby displaying the image. The light-emitting diode De emits light due to the current supplied from the high-voltage power supply VDD through the driving thin-film transistor T2.

[0039] That is, the amount of current flowing through the light-emitting diode De is proportional to the magnitude of the data signal, and the intensity of the light emitted by the light-emitting diode De is proportional to the amount of current flowing through the light-emitting diode De. Therefore, the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 display different gray levels according to the magnitude of the data signal, and thus, the transparent display device displays an image.

[0040] Furthermore, when the switching thin-film transistor T1 is turned off, the storage capacitor Cst will maintain the charge corresponding to the data signal for one frame. Therefore, even when the switching thin-film transistor T1 is turned off, the storage capacitor Cst ensures that the amount of current flowing through the light-emitting diode De remains constant and that the grayscale level displayed by the light-emitting diode De is maintained until the next frame.

[0041] In addition to the switching thin-film transistor T1, the driving thin-film transistor T2, and the storage capacitor Cst, one or more thin-film transistors and / or capacitors can be added to each sub-pixel P1, P2, and P3.

[0042] For example, in a transparent display device using an electroluminescent display, when a data signal is applied to the gate electrode of a driving thin-film transistor (TFT) T2, TFT T2 is turned on for a relatively long time, and the light-emitting diode (LED) De emits light, thereby displaying grayscale levels. Due to the prolonged application of the data signal, TFT T2 may degrade. Therefore, the mobility and / or threshold voltage Vth of TFT T2 will change, and consequently, each sub-pixel P1, P2, and P3 will display different grayscale levels for the same data signal. This results in uneven brightness, thereby reducing the image quality of the display device.

[0043] Therefore, to compensate for changes in the mobility and / or threshold voltage of the driving thin-film transistor T2, at least one sensing thin-film transistor and / or capacitor for sensing voltage changes can be added to each sub-pixel P1, P2, and P3. The sensing thin-film transistor and / or capacitor can be connected to a reference line for applying a reference voltage and outputting a sensed voltage.

[0044] Transparent display devices can be classified into bottom-emitting and top-emitting types based on the light emission direction of the electroluminescent display they use. In bottom-emitting display devices, light from the light-emitting diode (LED) De is emitted through the anode towards a substrate on which thin-film transistors (TFTs) T1 and T2 are formed. In top-emitting display devices, light from the LED De is emitted through the cathode towards a direction opposite to the substrate. Generally, since TFTs T1 and T2 are formed below the LED De in electroluminescent display devices, the size of the effective light-emitting area is limited by the TFTs T1 and T2 in bottom-emitting display devices, while top-emitting display devices have a larger effective light-emitting area than bottom-emitting display devices. Therefore, top-emitting display devices have a higher aperture ratio than bottom-emitting display devices, making them widely used in display devices with large size and high resolution.

[0045] Since the cathode is primarily formed of metallic material, it can be formed to be relatively thin in top-emitting display devices, allowing light to be emitted through it. However, in display devices with large sizes and high resolutions, the cathode resistance increases, causing a voltage drop in the voltage across the cathode's VSS (Voltage-Side Array), resulting in uneven brightness. Therefore, the transparent display device according to embodiments of this disclosure has a structure for reducing the cathode resistance.

[0046] Furthermore, the light-emitting layer of the light-emitting diode De of this disclosure is formed using a solution process. Therefore, the process can be simplified, and a display device with large size and high resolution can be provided.

[0047] Incidentally, as resolution increases, pixel size decreases. Therefore, the emissive layers of adjacent sub-pixels of different colors formed by solution processing may connect to each other, leading to color mixing. In particular, since transparent display devices include both emissive and transparent regions within a pixel, and the emissive region is relatively small, the likelihood of color mixing is high with increasing resolution. The transparent display device of this disclosure proposes a structure to prevent color mixing.

[0048] Figure 2 This is a schematic plan view of a transparent display device according to a first embodiment of the present disclosure.

[0049] like Figure 2 As shown, in the transparent display device 1000 according to the first embodiment of the present disclosure, a pixel P includes a light-emitting region EA and a transparent region TA. In this case, a pixel P may include three light-emitting regions EA1, EA2, and EA3 and two transparent regions TA1 and TA2, and each light-emitting region EA1, EA2, and EA3 has substantially the same configuration except for its size.

[0050] More specifically, pixel P includes a first sub-pixel, a second sub-pixel, and a third sub-pixel, such as a red sub-pixel, a green sub-pixel, and a blue sub-pixel. The luminescent region EA may include a first luminescent region EA1, a second luminescent region EA2, and a third luminescent region EA3, respectively, corresponding to the red, green, and blue sub-pixels. Furthermore, the transparent region TA includes a first transparent region TA1 and a second transparent region TA2, and the first transparent region TA1 and the second transparent region TA2 have different transmittances. For the same area, the transmittance of the first transparent region TA1 is higher than that of the second transparent region TA2.

[0051] In the context of the figure, a first luminescent region EA1, a second luminescent region EA2, and a third luminescent region EA3, as well as a first transparent region TA1 and a second transparent region TA2, are arranged along the Y direction (e.g., the vertical direction). Here, the Y direction can be defined as the first direction, and in the context of the figure, the X direction (e.g., the horizontal direction) can be defined as the second direction. Alternatively, the X direction can be defined as the first direction, and the Y direction can be defined as the second direction.

[0052] The first light-emitting region EA1, the second light-emitting region EA2, the third light-emitting region EA3, and the first transparent region TA1 can be arranged sequentially along the Y direction, and the second transparent region TA2 can be disposed on both sides of the first light-emitting region EA1. That is, the second transparent region TA2 can include a first portion disposed between the adjacent first light-emitting region EA1 and the second light-emitting region EA2, and a second portion disposed between the adjacent first light-emitting region EA1 and the first transparent region TA1. Here, the second portion of the second transparent region TA2 disposed between the first light-emitting region EA1 and the first transparent region TA1 can be omitted.

[0053] The first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 can have different sizes. For example, the size of the second light-emitting region EA2 of the green sub-pixel can be larger than the size of the first light-emitting region EA1 of the red sub-pixel and smaller than the size of the third light-emitting region EA3 of the blue sub-pixel, but it is not limited to this.

[0054] Since the light-emitting diodes (LEDs) disposed at each sub-pixel are formed of light-emitting materials with different properties, the LEDs have different lifespans and efficiencies, and the lifespan of the display device may be reduced due to the differences in LED lifespan. Therefore, in this disclosure, by differentiating the sizes of the first light-emitting region EA1 of the red sub-pixel, the second light-emitting region EA2 of the green sub-pixel, and the third light-emitting region EA3 of the blue sub-pixel, the lifespan and efficiency of the LEDs disposed at each sub-pixel can be optimized, thereby solving the problem of reduced display device lifespan and improving the lifespan of the display device.

[0055] The first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 can have the same length along the X direction and different widths along the Y direction. For example, the width of the second light-emitting region EA2 of the green sub-pixel can be greater than the width of the first light-emitting region EA1 of the red sub-pixel and smaller than the width of the third light-emitting region EA3 of the blue sub-pixel.

[0056] The first luminous region EA1, the second luminous region EA2, and the third luminous region EA3, as well as the first transparent region TA1 and the second transparent region TA2, are each shown to have a rectangular shape, but are not limited thereto. The first luminous region EA1, the second luminous region EA2, and the third luminous region EA3, as well as the first transparent region TA1 and the second transparent region TA2, can each have various shapes, such as a rectangular shape with rounded corners, an elliptical shape, etc.

[0057] Simultaneously, signal lines 114 and 116 are disposed between adjacent first light-emitting regions EA1 and second light-emitting regions EA2, more specifically, between adjacent second transparent regions TA2 and second light-emitting regions EA2. Signal lines 114 and 116 include a low-potential voltage line 114 for providing a low-potential voltage VSS and a high-potential voltage line 116 for providing a high-potential voltage VDD. The low-potential voltage line 114 and the high-potential voltage line 116 extend along the X direction and alternate with each other along the Y direction. That is, the low-potential voltage line 114 is disposed along the Y direction in one of two adjacent pixels P, while the high-potential voltage line 116 is disposed in the other of the two adjacent pixels P. The low-potential voltage line 114 and the high-potential voltage line 116 can be formed of the same material and formed on the same layer. However, this disclosure is not limited thereto. Alternatively, the low-potential voltage line 114 and the high-potential voltage line 116 can be formed of the same material and formed on different layers, or formed of different materials and formed on different layers.

[0058] The contact hole 170d is formed to correspond to the low potential voltage line 114, and the low potential voltage line 114 is electrically connected to the cathode of the light-emitting diode (not shown) through the contact hole 170d.

[0059] Reference Figure 3 The cross-sectional structure of the transparent display device 1000 according to the first embodiment of the present disclosure is described in detail.

[0060] Figure 3 This is a schematic cross-sectional view of a transparent display device according to a first embodiment of the present disclosure, and corresponds to... Figure 2 The line I-I'. This will be combined with a reference. Figure 2 Describe it.

[0061] As described above, the light-emitting area EA includes a first light-emitting area EA1, a second light-emitting area EA2, and a third light-emitting area EA3, and the transparent area TA includes a first transparent area TA1 and a second transparent area TA2. Since the first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3 have essentially the same configuration, therefore... Figure 3 Only the first luminescent region EA1 is shown in the image.

[0062] like Figure 3 As shown, in the transparent display device 1000 according to the first embodiment of the present disclosure, a light-blocking pattern 112 and a first auxiliary electrode 114 made of a first conductive material such as metal are formed on a substrate 100. Pixels P including light-emitting regions EA1, EA2, and EA3 and transparent regions TA1 and TA2 are defined on the substrate 100. The light-blocking pattern 112 is disposed in each of the light-emitting regions EA1, EA2, and EA3. The first auxiliary electrode 114, serving as a low-potential voltage line, is disposed between adjacent first light-emitting regions EA1 and second light-emitting regions EA2, and more specifically, between adjacent second transparent regions TA2 and second light-emitting regions EA2.

[0063] The substrate 100 can be a glass substrate or a plastic substrate. For example, polyimide can be used for plastic substrates, but it is not limited to this.

[0064] The light-blocking pattern 112 and the first auxiliary electrode 114 can be formed from at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), and tungsten (W), or an alloy thereof, and can have a single-layer structure or a multi-layer structure. For example, the light-blocking pattern 112 and the first auxiliary electrode 114 can have a bilayer structure comprising a lower layer of molybdenum-titanium alloy (MoTi) and an upper layer of copper (Cu), and the upper layer can have a thicker thickness than the lower layer.

[0065] Meanwhile, as described above, a high-potential voltage line 116 is formed between the second transparent region TA2 and the second light-emitting region EA2 of another pixel P on the substrate 100, and is formed of the same material as the first auxiliary electrode 114.

[0066] A buffer layer 120 is formed on the light-blocking pattern 112 and the first auxiliary electrode 114, substantially covering the entire surface of the substrate 100. The buffer layer 120 may be formed of an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx), and may be formed as a single layer or multiple layers.

[0067] Here, the buffer layer 120 has a first hole 120a on the light-blocking pattern 112 and a second hole 120b on the first auxiliary electrode 114. The top surface of the light-blocking pattern 112 is partially exposed through the first hole 120a, and the top surface of the first auxiliary electrode 114 is partially exposed through the second hole 120b.

[0068] Semiconductor layer 122 and capacitor electrode 124 are patterned and formed on buffer layer 120. Semiconductor layer 122 and capacitor electrode 124 are spaced apart from each other on light-blocking pattern 112. Light-blocking pattern 112 blocks light incident on semiconductor layer 122 and prevents semiconductor layer 122 from deteriorating due to light.

[0069] The semiconductor layer 122 and the capacitor electrode 124 can be formed of polycrystalline silicon, and in this case, both ends of the semiconductor layer 122 and the capacitor electrode 124 can be doped with impurities. Alternatively, the semiconductor layer 122 and the capacitor electrode 124 can be formed of an oxide semiconductor material.

[0070] A gate insulating layer 130 of insulating material and a gate electrode 132 of a second conductive material, such as a metal, are sequentially formed on the semiconductor layer 122. The gate insulating layer 130 and the gate electrode 132 are positioned corresponding to the center of the semiconductor layer 122.

[0071] The gate insulating layer 130 may be formed of an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx). When the semiconductor layer 122 is made of an oxide semiconductor material, the gate insulating layer 130 is preferably formed of silicon oxide (SiO2).

[0072] The gate electrode 132 can be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), and tungsten (W), or an alloy thereof, and can have a single-layer structure or a multi-layer structure. For example, the gate electrode 132 can have a bilayer structure comprising a lower layer of molybdenum-titanium alloy (MoTi) and an upper layer of copper (Cu), and the upper layer can have a thicker thickness than the lower layer.

[0073] As shown, the gate insulating layer 130 can be patterned to have a shape substantially the same as the gate electrode 132. In this case, the width of the gate insulating layer 130 can be wider than the width of the gate electrode 132, thereby exposing the edge of the top surface of the gate insulating layer 130. Alternatively, the width of the gate insulating layer 130 can be the same as the width of the gate electrode 132. Otherwise, the gate insulating layer 130 may not be patterned and can be formed substantially over the entire surface of the substrate 100.

[0074] Meanwhile, the gate line (not shown) may also be formed of the same material as the gate electrode 132 and formed on the same layer as the gate electrode 132.

[0075] An interlayer insulating layer 140 made of an insulating material is formed on the gate electrode 132 above essentially the entire surface of the substrate 100. The interlayer insulating layer 140 may be formed of an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx). Alternatively, the interlayer insulating layer 140 may be formed of an organic insulating material such as propylene or benzocyclobutene.

[0076] The interlayer insulating layer 140 has a first contact hole 140a, a second contact hole 140b, a third contact hole 140c, and a fourth contact hole 140d. The first contact hole 140a and the second contact hole 140b expose the two ends of the semiconductor layer 122, respectively. The third contact hole 140c partially exposes the top surface of the light-blocking pattern 112 and is located within the first hole 120a. Alternatively, the first hole 120a can be omitted, and the third contact hole 140c can be formed in the buffer layer 120 and the interlayer insulating layer 140 to partially expose the top surface of the light-blocking pattern 112. The fourth contact hole 140d partially exposes the top surface of the first auxiliary electrode 114 and is located within the second hole 120b. Alternatively, the second hole 120b can be omitted, and the fourth contact hole 140d can be formed in the buffer layer 120 and the interlayer insulating layer 140 to partially expose the top surface of the first auxiliary electrode 114.

[0077] A source electrode 142 and a drain electrode 144, as well as a second auxiliary electrode 146 made of a third conductive material such as a metal, are formed on an interlayer insulating layer 140. The source electrode 142, drain electrode 144, and second auxiliary electrode 146 can be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), and tungsten (W), or an alloy thereof, and can have a single-layer or multi-layer structure. For example, the source electrode 142, drain electrode 144, and second auxiliary electrode 146 can have a bilayer structure comprising a lower layer of molybdenum-titanium alloy (MoTi) and an upper layer of copper (Cu), and the upper layer can have a thicker thickness than the lower layer. Alternatively, the source electrode 142, drain electrode 144, and second auxiliary electrode 146 can have a trilayer structure.

[0078] The source electrode 142 and the drain electrode 144 contact the two ends of the semiconductor layer 122 through the first contact hole 140a and the second contact hole 140b, respectively. Furthermore, the drain electrode 144 contacts the light-blocking pattern 112 through the third contact hole 140c and overlaps with the capacitor electrode 124. The capacitor electrode 124 overlaps with the light-blocking pattern 112 and the drain electrode 144 to form a storage capacitor.

[0079] Meanwhile, the second auxiliary electrode 146 contacts the first auxiliary electrode 114 through the fourth contact hole 140d. The second auxiliary electrode 146 can be omitted.

[0080] Furthermore, data lines (not shown) may be further formed on the interlayer insulating layer 140, and the data lines may be made of a third conductive material.

[0081] Semiconductor layer 122, gate electrode 132, source electrode 142, and drain electrode 144 form a thin-film transistor Tr. The thin-film transistor Tr has a coplanar structure, wherein the gate electrode 132, source electrode 142, and drain electrode 144 are located on the same side with respect to semiconductor layer 122.

[0082] Alternatively, the thin-film transistor Tr can have an anti-interleaved structure, wherein the gate electrode, source electrode, and drain electrode are located on different sides of the semiconductor layer. That is, the gate electrode can be disposed below the semiconductor layer, and the source electrode and drain electrode can be disposed above the semiconductor layer. In this case, the semiconductor layer can be formed of oxide semiconductor or amorphous silicon.

[0083] Thin-film transistor Tr corresponds to Figure 1 The driving thin-film transistor T2 can also be formed on the substrate 100 with the same structure as the thin-film transistor Tr. Figure 1 The switching thin-film transistor T1.

[0084] A passivation layer 150 of insulating material is formed essentially over the entire surface of the substrate 100 on the source electrode 142, the drain electrode 144, and the second auxiliary electrode 146. The passivation layer 150 may be formed of an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx).

[0085] Next, an insulating material coating layer 155 is formed on the passivation layer 150 substantially above the entire surface of the substrate 100. The coating layer 155 may be formed of an organic insulating material such as propylene or benzocyclobutene. The coating layer 155 can eliminate horizontal differences caused by the underlying layer and has a substantially flat top surface.

[0086] Here, one of the passivation layer 150 and the coating layer 155 may be omitted. For example, the passivation layer 150 may be omitted, but it is not limited to this.

[0087] The passivation layer 150 and the coating layer 155 have a drain contact hole 155a that exposes the drain electrode 144. In addition, the passivation layer 150 and the coating layer 155 have a fifth contact hole 155b that exposes the second auxiliary electrode 146.

[0088] In each light-emitting region EA1, EA2, and EA3, a first electrode 160 with a relatively high work function is formed on the coating layer 155. The first electrode 160 is in contact with the drain electrode 144 through a drain contact hole 155a.

[0089] For example, the first electrode 160 may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

[0090] Furthermore, the electroluminescent display device according to embodiments of this disclosure can be a top-emitting type, in which the light from the light-emitting diode is emitted in the opposite direction to the substrate 100. Therefore, the first electrode 160 may also include a reflective electrode or reflective layer formed of a metallic material with relatively high reflectivity beneath the transparent conductive material layer. For example, the reflective electrode or reflective layer may be formed of an aluminum palladium copper (APC) alloy, silver (Ag), aluminum (Al), or molybdenum (Mo). The first electrode 160 may have a three-layer structure such as ITO / APC / ITO, ITO / Ag / ITO, ITO / Al / ITO, or ITO / Mo / ITO, but is not limited thereto.

[0091] Furthermore, a connection pattern 162 is formed on the coating layer 155 between the adjacent first light-emitting region EA1 and the second light-emitting region EA2, and more specifically, between the second transparent region TA2 and the second light-emitting region EA2. The connection pattern 162 is formed of the same material as the first electrode 160. The connection pattern 162 contacts the second auxiliary electrode 146 through the fifth contact hole 155b.

[0092] An insulating material embankment 170 is formed on the first electrode 160 and the connecting pattern 162. The embankment 170 overlaps and covers the edges of each of the first electrode 160 and the connecting pattern 162.

[0093] The embankment 170 has a first opening 170a and a second opening 170b. The first opening 170a corresponds to a first light-emitting region EA1 and a second transparent region TA2, and the second opening 170b corresponds to the first transparent region TA1. The first electrode 160 is exposed through the first opening 170a in the first light-emitting region EA1, and the top surface of the coating layer 155 is exposed through the second opening 170b in the first transparent region TA1.

[0094] Furthermore, the embankment 170 also has an auxiliary contact hole 170d between the adjacent first light-emitting area EA1 and the second light-emitting area EA2, and more specifically between the adjacent second transparent area TA2 and the second light-emitting area EA2. A portion of the connection pattern 162 is exposed through the auxiliary contact hole 170d.

[0095] Although not shown in the figure, the embankment 170 also includes a third opening corresponding to each of the second luminous region EA2 and the third luminous region EA3, which will be described in detail later.

[0096] The dike portion 170 includes a first dike portion 172 that is hydrophilic and a second dike portion 174 that is hydrophobic. The second dike portion 174 is disposed on the first dike portion 172. The second dike portion 174 has a narrower width than the first dike portion 172 and exposes the edge of the top surface of the first dike portion 172. Furthermore, the second dike portion 174 may have a thicker thickness than the first dike portion 172.

[0097] Here, the second embankment 174 basically has a first opening 170a and a second opening 170b as well as an auxiliary contact hole 170d.

[0098] Therefore, the first dam 172 overlaps and contacts the edge of the first electrode 160 in the first light-emitting region EA1, and the second dam 174 is spaced apart from the first electrode 160. At this time, the region between the second dam 174 and the first electrode 160 becomes the second transparent region TA2.

[0099] For example, the first dam 172 may be formed of an inorganic insulating material having hydrophilic properties, such as silicon oxide (SiO2) or silicon nitride (SiNx). Alternatively, the first dam 172 may be formed of polyimide.

[0100] Furthermore, at least the top surface of the second embankment 174 is hydrophobic, and the side surfaces of the second embankment 174 may be hydrophobic or hydrophilic. The second embankment 174 may be formed of a hydrophobic organic insulating material. Alternatively, the second embankment 174 may be formed of a hydrophilic organic insulating material and subjected to a hydrophobic treatment.

[0101] Meanwhile, the first dam 172 and the second dam 174 are formed of different materials and are separate from each other. However, the hydrophilic first dam 172 and the hydrophobic second dam 174 can be formed of the same material and integrally formed. For example, an organic material layer having a hydrophobic top surface can be formed substantially above the entire surface of the substrate 100, exposed to light through a halftone mask including a light-transmitting portion, a light-blocking portion, and a semi-transparent portion, and can be patterned to form a hydrophilic first dam 172 and a hydrophobic second dam 174 with different widths and thicknesses.

[0102] Alternative site, the first dike section 172 can be omitted.

[0103] A light-emitting layer 180 is formed on a first electrode 160 exposed through a first opening 170a. The facing side surfaces of the light-emitting layers 180 are surrounded by a second embankment 174. The light-emitting layer 180 on the first electrode 160 in the first light-emitting region EA1 extends into the second transparent region TA2. That is, the light-emitting layer 180 is disposed in both the first light-emitting region EA1 and the second transparent region TA2.

[0104] The light-emitting layer 180 is in contact with the top and side surfaces of the first embankment 172 and the side surface of the second embankment 174.

[0105] Although not shown in the figure, the light-emitting layer 180 includes a light-emitting material layer. The light-emitting material layer can be formed of any, but is not limited to, red, green, and blue light-emitting materials. The light-emitting material can be an organic light-emitting material, such as a phosphorescent compound or a fluorescent compound, or it can be an inorganic light-emitting material, such as quantum dots.

[0106] In addition, the light-emitting layer 180 may also include a first charge-assisted layer under the light-emitting material layer and a second charge-assisted layer on the light-emitting material layer.

[0107] The first charge-assisted layer may be a hole-assisted layer, and the hole-assisted layer may include at least one of a hole injection layer (HIL) and a hole transport layer (HTL). Furthermore, the second charge-assisted layer may be an electron-assisted layer, and the electron-assisted layer may include at least one of an electron injection layer (EIL) and an electron transport layer (ETL). However, this disclosure is not limited thereto.

[0108] The light-emitting layer 180 is formed via a solution process. Therefore, the process can be simplified and a display device with large size and high resolution can be provided. Spin coating, inkjet printing, or screen printing methods can be used as solution processes, but this disclosure is not limited thereto.

[0109] When the solution dries, the solvent in the region adjacent to the second dam 174 dries at a different rate than the solvent in other regions. That is, the solvent in the region adjacent to the second dam 174 dries faster than the solvent in other regions. Therefore, the height of the light-emitting layer 180 in the region adjacent to the second dam 174 can increase as the light-emitting layer 180 gets closer to the second dam 174. The height of the light-emitting layer 180 at the edge of the first light-emitting region EA1 is higher than the height of the light-emitting layer 180 at the center of the first light-emitting region EA1.

[0110] Meanwhile, the electronic auxiliary layer of the light-emitting layer 180 can be formed by a thermal evaporation process. Therefore, the electronic auxiliary layer can be formed essentially over the entire surface of the substrate 100.

[0111] A second electrode 190 of a conductive material with a relatively low work function is formed substantially above the entire surface of the substrate 100, and more specifically, substantially above the entire display area including the plurality of pixels P, on the light-emitting layer 180, the second embankment 174, and the connecting pattern 162. Therefore, the second electrode 190 is formed in all the first light-emitting regions EA1, the second light-emitting region EA2, and the third light-emitting region EA3, as well as the first transparent region TA1 and the second transparent region TA2.

[0112] The second electrode 190 may be formed of aluminum (Al), magnesium (Mg), silver (Ag), or alloys thereof. The second electrode 190 has a relatively thin thickness, allowing light from the light-emitting layer 180 to be transmitted through it. For example, the second electrode 190 may have a thickness of 5 nm to 10 nm.

[0113] The second electrode 190 contacts the top and side surfaces of the embankment 170. More specifically, the second electrode 190 contacts the top and side surfaces of the second embankment 174, and the second electrode 190 may also contact the top and side surfaces of the first embankment 172.

[0114] Simultaneously, the second electrode 190 is electrically connected to the connection pattern 162 through the auxiliary contact hole 170d. Therefore, the second electrode 190 is electrically connected to the first auxiliary electrode 114 and the second auxiliary electrode 146 through the connection pattern 162. In this case, the second electrode 190 can directly contact the connection pattern 162. Alternatively, when the electronic auxiliary layer of the light-emitting layer 180 is formed substantially above the entire surface of the substrate 100, the second electrode 190 can indirectly contact the connection pattern 162.

[0115] Furthermore, the second electrode 190 is in contact with the top surface of the coating layer 155 in the first transparent region TA1. The second electrode 190 can be in direct contact with the top surface of the coating layer 155 in the first transparent region TA1.

[0116] In the transparent display device 1000 according to the first embodiment of the present disclosure, a first embankment 172 and a light-emitting layer 180 are further formed in the second transparent region TA2 compared to the first transparent region TA1. Therefore, the transmittance of the first transparent region TA1 is higher than the transmittance of the second transparent region TA2.

[0117] The first electrode 160, the light-emitting layer 180, and the second electrode 190 constitute a light-emitting diode (LED) De. The first electrode 160 can be used as an anode, and the second electrode 190 can be used as a cathode, but is not limited thereto.

[0118] As described above, the transparent display device 1000 according to the first embodiment of this disclosure can be a top-emitting type. In the top-emitting type, light from the light-emitting layer 180 of the light-emitting diode De is output in the opposite direction to the substrate 100, that is, it is output to the outside through the second electrode 190. The top-emitting type display device can have a wider light-emitting area than a bottom-emitting type display device of the same size, thereby improving brightness and reducing power consumption.

[0119] At this point, the light-emitting diode De of each sub-pixel can have an element thickness corresponding to the wavelength of the emitted light for the microcavity effect, thereby improving luminous efficiency. Here, the element thickness can be defined as the thickness of the light-emitting layer 180, i.e., the distance between the first electrode 160 and the second electrode 190, but is not limited thereto. For example, the element thickness of the second light-emitting region EA2 can be less than the element thickness of the first light-emitting region EA1 and greater than the element thickness of the third light-emitting region EA3.

[0120] Meanwhile, a protective layer and / or encapsulation layer (not shown) can be formed on the second electrode 190 substantially above the entire surface of the substrate 100 to block moisture or oxygen introduced from the outside, thereby protecting the light-emitting diode De.

[0121] Furthermore, a capping layer (not shown) can be formed substantially above the entire surface of the substrate 100 on the second electrode 190. The capping layer can be formed of an insulating material with a relatively high refractive index. The wavelength of light traveling along the capping layer can be amplified by surface plasmon resonance, thereby increasing the intensity of the peak and thus improving the luminous efficiency in a top-emitting electroluminescent display device. For example, the capping layer can be formed as a single layer of organic or inorganic layers, or as an organic / inorganic stacked layer.

[0122] In the transparent display device 1000 according to the first embodiment of this disclosure, the light-emitting layers 180 of adjacent sub-pixels are connected to each other and formed as a single unit, thereby reducing or minimizing the drip volume deviation between nozzles. The configuration of these light-emitting and transparent regions can be achieved through a dam structure, and this will refer to... Figures 4 to 6 Provide a detailed description.

[0123] Figure 4 This is a schematic plan view of the embankment structure of a transparent display device according to the first embodiment of the present disclosure.

[0124] exist Figure 4 In the first embodiment of the transparent display device 1000 according to the present disclosure, a pixel P includes a light-emitting region and a transparent region. The light-emitting region EA includes a first light-emitting region EA1, a second light-emitting region EA2 and a third light-emitting region EA3, and the transparent region includes a first transparent region TA1 and a second transparent region TA2.

[0125] The first light-emitting area EA1, the second light-emitting area EA2, the third light-emitting area EA3, and the first transparent area TA1 are arranged sequentially along the Y direction, and the second transparent area TA2 is located between the adjacent first light-emitting areas EA1 and EA2 and between the adjacent first light-emitting areas EA1 and TA1.

[0126] Furthermore, a first auxiliary electrode 114 or a high-potential voltage line 116 extending along the X direction is disposed between adjacent second transparent regions TA2 and second light-emitting regions EA2. The first auxiliary electrode 114 and the high-potential voltage line 116 are arranged alternately along the Y direction.

[0127] The first luminescent region EA1, the second luminescent region EA2, and the third luminescent region EA3, as well as the first transparent region TA1 and the second transparent region TA2, are defined by the embankment 170.

[0128] The embankment 170 has a first opening 170a, a second opening 170b, and a third opening 170c. The first opening 170a corresponds to a first light-emitting region EA1 and a second transparent region TA2, the second opening 170b corresponds to the first transparent region TA1, and the third opening 170c corresponds to each of the second light-emitting region EA2 and the third light-emitting region EA3.

[0129] Here, each of the first opening 170a and the third opening 170c can be configured to correspond to a light-emitting region EA1, EA2, and EA3 comprising a row of sub-pixels of the same color adjacent to each other along the X direction. Specifically, the first opening 170a may correspond to the first light-emitting region EA1 of the sub-pixel row arranged along the X direction, and the third opening 170c may correspond to the second light-emitting region EA2 of the sub-pixel row arranged along the X direction, or the third light-emitting region EA3 of the sub-pixel row arranged along the X direction. The second opening 170b may correspond to a first transparent region TA1 arranged along the X direction.

[0130] Furthermore, the embankment 170 also has an auxiliary contact hole 170d. The auxiliary contact hole 170d is disposed between the adjacent second transparent region TA2 and the second light-emitting region EA2, and overlaps with the first auxiliary electrode 114. Meanwhile, the auxiliary contact hole 170d is not formed on the high-potential voltage line 116.

[0131] An auxiliary contact hole 170d can be formed along the X direction for each pixel P. In this case, the electrical contact area between the second electrode of the light-emitting diode and the first auxiliary electrode 114 can be increased, thereby improving the contact characteristics. Alternatively, the auxiliary contact hole 170d can be formed along the X direction for two pixels P. In this case, problems that may occur in the patterning process of the auxiliary contact hole 170d can be reduced.

[0132] The embankment 170 includes a hydrophilic first embankment 172 and a hydrophobic second embankment 174. The second embankment 174 essentially has a first opening 170a, a second opening 170b, a third opening 170c, and an auxiliary contact hole 170d.

[0133] Here, the first dam portion 172 is disposed between adjacent sub-pixels of the same color along the X direction, and the second dam portion 174 is disposed between adjacent sub-pixels of different colors. That is, the first dam portion 172 is disposed between adjacent light-emitting regions of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 along the X direction, and the second dam portion 174 is disposed between adjacent light-emitting regions of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 along the Y direction. Furthermore, the second dam portion 174 is also disposed between light-emitting regions and transparent regions, more specifically, between the third light-emitting region EA3 and the first transparent region TA1, and between the second light-emitting region EA2 and the second transparent region TA2. Additionally, the second dam portion 174 is also disposed between the first transparent region TA1 and the second transparent region TA2.

[0134] Meanwhile, the first embankment 172 is also disposed in the second transparent region TA2. Therefore, the light-emitting layer of the first light-emitting region EA1 extends into the second transparent region TA2.

[0135] In the transparent display device 1000 according to the first embodiment of this disclosure, the light-emitting layers of sub-pixels of the same color are connected to each other and formed as a single unit by the first opening 170a and the third opening 170c, thereby reducing or minimizing the deviation in the drip volume between nozzles and uniformly forming the thickness of the light-emitting layer of the sub-pixels. Therefore, non-uniformity is prevented, thereby effectively preventing the degradation of the image quality of the display device.

[0136] exist Figure 5 and Figure 6 The cross-sectional structure of a transparent display device 1000 according to a first embodiment of the present disclosure is shown.

[0137] Figure 5 Is with Figure 4 The cross-sectional view corresponding to line II-II', and Figure 6 Is with Figure 4The cross-sectional view corresponding to line III-III'. (Refer to reference...) Figure 3 and Figure 4 Describe it.

[0138] like Figure 5 and Figure 6 As shown, in the transparent display device 1000 according to the first embodiment of the present disclosure, a pixel P is defined on the substrate 100, including a first light-emitting region EA1, a second light-emitting region EA2, a third light-emitting region EA3, a first transparent region TA1, and a second transparent region TA2. Here, the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 have different widths. For example, the width of the second light-emitting region EA2 is greater than the width of the first light-emitting region EA1 and less than the width of the third light-emitting region EA3.

[0139] The first luminescent region EA1 and the second transparent region TA2 are disposed between the first transparent region TA1 and the second luminescent region EA2, and the second transparent region TA2 is disposed on both sides of the first luminescent region EA1.

[0140] A first auxiliary electrode 114 is formed between a second light-emitting region EA2 and a second transparent region TA2 on the substrate 100. A buffer layer 120 is formed substantially over the entire surface of the substrate 100, and a thin-film transistor Tr is formed to correspond to each of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 of each sub-pixel on the buffer layer 120.

[0141] Here, the thin-film transistor Tr can have the same characteristics as... Figure 3 The configuration is the same as the previous one.

[0142] Then, a passivation layer 150 and a coating layer 155 are sequentially formed on the thin-film transistor Tr, substantially over the entire surface of the substrate 100, and a first electrode 160 is formed on the coating layer 155 in each of the first light-emitting regions EA1, the second light-emitting region EA2 and the third light-emitting region EA3 of each sub-pixel.

[0143] Although not shown in the figure, at least one insulating layer may be further formed between the buffer layer 120 and the passivation layer 150.

[0144] The passivation layer 150 and the coating layer 155 have a drain contact hole 155a that exposes a portion of the thin-film transistor Tr, namely the drain electrode, and the first electrode 160 contacts the drain electrode of the thin-film transistor Tr through the drain contact hole 155a.

[0145] Simultaneously, a connection pattern 162 is formed on the coating layer 155 between the second light-emitting region EA2 and the second transparent region TA2, and the connection pattern 162 is formed of the same material as the first electrode 160. At this time, the coating layer 155 has a contact hole 155c corresponding to the first auxiliary electrode 114, and the connection pattern 162 is electrically connected to the first auxiliary electrode 114 through the contact hole 155c. Here, it is shown that the contact hole 155c is also formed in the passivation layer 150 and the buffer layer 120, but this is not a limitation. Alternatively, a second auxiliary electrode (not shown) may be further formed between the connection pattern 162 and the first auxiliary electrode 114. In this case, the contact hole 155c may be formed only in the coating layer 155 and the passivation layer 150, and the buffer layer 120 may have other contact holes exposing the second auxiliary electrode.

[0146] Next, a dam 170 is formed on the first electrode 160 and the connection pattern 162. The dam 170 has a first opening 170a, a second opening 170b, and a third opening 170c. The first opening 170a corresponds to the first light-emitting region EA1 and the second transparent region TA2, the second opening 170b corresponds to the first transparent region TA1, and the third opening 170c corresponds to each of the second light-emitting region EA2 and the third light-emitting region EA3. Furthermore, the dam 170 also has an auxiliary contact hole 170d between the second light-emitting region EA2 and the second transparent region TA2. The auxiliary contact hole 170d corresponds to the first auxiliary electrode 114.

[0147] The dike section 170 includes a first dike section 172 which is hydrophilic and a second dike section 174 which is hydrophobic.

[0148] The first dike portion 172 is formed between adjacent sub-pixels of the same color. On the other hand, the second dike portion 174 is formed between adjacent sub-pixels of different colors, and exposes the first dike portion 172 disposed between adjacent sub-pixels of the same color. Therefore, in Figure 5 and Figure 6 In the figure, the second embankment 174 is formed between adjacent light-emitting regions in the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3, and the first embankment 172 is formed between adjacent third light-emitting regions EA3. Although not shown in the figure, the first embankment 172 is also formed between adjacent first light-emitting regions EA1 and adjacent second light-emitting regions EA2.

[0149] Furthermore, the second embankment 174 is formed between the adjacent first transparent region TA1 and the second transparent region TA2, and between the adjacent second transparent region TA2 and the second luminous region EA2.

[0150] Simultaneously, the first embankment 172 is also formed in the second transparent region TA2. Furthermore, the first embankment 172 may be further formed below the second embankment 174. Therefore, the first embankment 172 is formed between adjacent light-emitting regions of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3, and is also formed between adjacent first transparent regions TA1 and second transparent regions TA2, and between adjacent second transparent regions TA2 and second light-emitting regions EA2.

[0151] A light-emitting layer 180 is formed on each of the first electrodes 160 exposed through the first opening 170a and the third opening 170c. The light-emitting layer 180 includes a red light-emitting layer 180r, a green light-emitting layer 180g, and a blue light-emitting layer 180b, respectively corresponding to the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3. The red light-emitting layer 180r is formed in the second transparent region TA2 and the first light-emitting region EA1.

[0152] The red light-emitting layer 180r, the green light-emitting layer 180g, and the blue light-emitting layer 180b have different thicknesses. For example, the thickness of the green light-emitting layer 180g is less than the thickness of the red light-emitting layer 180r but greater than the thickness of the blue light-emitting layer 180b.

[0153] Here, the light-emitting layer 180 is also formed on the first embankment 172 exposed between adjacent sub-pixels of the same color. The light-emitting layer 180 on the first embankment 172 is connected to the light-emitting layer 180 on the adjacent first electrode 160, thus forming a single unit. That is, as Figure 6 As shown, a blue light-emitting layer 180b is formed on a first embankment 172 between adjacent third light-emitting regions EA3, and the blue light-emitting layer 180b on the first embankment 172 is connected to the blue light-emitting layer 180b of the adjacent third light-emitting region EA3, thereby forming an integral unit.

[0154] The light-emitting layer 180 is formed using a solution process. Here, solutions dripped from different nozzles corresponding to the same color sub-pixel rows are connected to each other, and the solutions are dried to form the light-emitting layer 180. Therefore, by reducing or minimizing the deviation in the amount of dripped solution between the nozzles, the thickness of the film formed in each sub-pixel can be formed uniformly.

[0155] At this point, a red light-emitting layer 180r, which has the narrowest width and the thickest thickness, is formed in both the second transparent region TA2 and the first light-emitting region EA1, thereby ensuring sufficient area for solution dripping. Furthermore, the first auxiliary electrode 114 and auxiliary contact hole 170d between the second transparent region TA2 and the second light-emitting region EA2 increase the distance between the red light-emitting layer 180r and the green light-emitting layer 180g. Therefore, color mixing between the red light-emitting layer 180r and the green light-emitting layer 180g can be prevented.

[0156] Next, a second electrode 190 is formed on the light-emitting layer 180. The first electrode 160, the light-emitting layer 180, and the second electrode 190 constitute a light-emitting diode (LED).

[0157] Here, the second electrode 190 is formed essentially above the entire surface of the substrate 100, and more specifically, essentially above the entire display area where the plurality of pixels P are disposed. That is, the second electrode 190 is formed in all the first light-emitting regions EA1, the second light-emitting regions EA2 and the third light-emitting regions EA3, as well as the first transparent regions TA1 and the second transparent regions TA2, and is also formed on the embankment 170.

[0158] The second electrode 190 is electrically connected to the first auxiliary electrode 114 through the auxiliary contact hole 170d. Specifically, the second electrode 190 is electrically connected to the connection pattern 162 through the auxiliary contact hole 170d, and the connection pattern 162 is electrically connected to the first auxiliary electrode 114 through the contact hole 155c. Therefore, the second electrode 190 is electrically connected to the first auxiliary electrode 114 through the connection pattern 162. Here, the second electrode 190 can directly contact the connection pattern 162.

[0159] In addition, the second electrode 190 is in contact with the coating layer 155 exposed through the second opening 170b in the first transparent region TA1.

[0160] In the transparent display device 1000 according to the first embodiment of the present disclosure, a first embankment 172 and a light-emitting layer 180 are further formed in the second transparent region TA2 compared to the first transparent region TA1. Therefore, the transmittance of the first transparent region TA1 is higher than the transmittance of the second transparent region TA2.

[0161] As described above, in the transparent display device 1000 according to the first embodiment of the present disclosure, a pixel P includes a light-emitting area EA and a transparent area TA, such that image information can be displayed through the light-emitting area EA while surrounding environmental information, such as the background, can be displayed through the transparent area TA.

[0162] Furthermore, in the transparent display device 1000 according to the first embodiment of the present disclosure, by forming at least some of the light-emitting layers 180 via a solution process, a fine metal mask can be omitted, thereby reducing manufacturing costs and enabling a display device with large size and high definition.

[0163] Furthermore, the transparent display device 1000 according to the first embodiment of this disclosure is implemented as a top-emitting type, thereby improving brightness and reducing power consumption. Here, since the second electrode 190 is formed to have a relatively thin thickness to transmit light, the resistance of the second electrode 190 may increase, but the resistance of the second electrode 190 can be reduced by electrically connecting the second electrode 190 to the first auxiliary electrode 114 via the connection pattern 162.

[0164] Furthermore, in the transparent display device 1000 according to the first embodiment of the present disclosure, the light-emitting layers 180 of the same color sub-pixels are connected to each other and formed as a whole, thereby reducing or minimizing the deviation of the drip volume between nozzles and uniformly forming the thickness of the light-emitting layer 180 of each sub-pixel.

[0165] Furthermore, the second transparent region TA2 is disposed on both sides of the first light-emitting region EA1 with the smallest size, such that the light-emitting layer 180 with the thickest thickness of the first light-emitting region EA1 extends into the second transparent region TA2, thereby preventing color mixing between the first light-emitting region EA1 and the second light-emitting region EA2.

[0166] Furthermore, the first auxiliary electrode 114 is disposed between the first light-emitting region EA1 and the second light-emitting region EA2, and more specifically, between the second transparent region TA2 and the second light-emitting region EA2, thereby further preventing color mixing between the first light-emitting region EA1 and the second light-emitting region EA2. The size of the auxiliary contact hole 170d can also be increased, and the contact area between the second electrode 190 and the connecting pattern 162 can be increased, thereby improving the contact characteristics between the second electrode 190 and the connecting pattern 162.

[0167] In this disclosure, the first auxiliary electrode may be configured to overlap with the first light-emitting region EA1. (Refer to...) Figure 7 A detailed description of such a transparent display device according to a second embodiment of the present disclosure is provided.

[0168] Figure 7 This is a schematic plan view of a transparent display device according to a second embodiment of the present disclosure.

[0169] like Figure 7As shown, in the transparent display device 2000 according to the second embodiment of the present disclosure, a pixel P includes a light-emitting region EA and a transparent region TA. In this case, a pixel P may include a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3, respectively corresponding to a first sub-pixel, a second sub-pixel, and a third sub-pixel (e.g., a red sub-pixel, a green sub-pixel, and a blue sub-pixel), as well as a first transparent region TA1 and a second transparent region TA2.

[0170] The first transparent region TA1 and the second transparent region TA2 have different transmittances. Here, based on the same area, the transmittance of the first transparent region TA1 is higher than that of the second transparent region TA2.

[0171] The first luminous region EA1, the second luminous region EA2, the third luminous region EA3, and the first transparent region TA1 can be arranged sequentially along a first direction, i.e., the Y direction, and the second transparent region TA2 can be disposed on both sides of the first luminous region EA1. That is, the second transparent region TA2 can include a first portion disposed between adjacent first luminous regions EA1 and second luminous regions EA2, and a second portion disposed between adjacent first luminous regions EA1 and first transparent region TA1. Here, the second portion of the second transparent region TA2 disposed between the first luminous region EA1 and first transparent region TA1 can be omitted.

[0172] The first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 can have different sizes. For example, the size of the second light-emitting region EA2 of the green sub-pixel can be larger than the size of the first light-emitting region EA1 of the red sub-pixel and smaller than the size of the third light-emitting region EA3 of the blue sub-pixel, but it is not limited to this.

[0173] At this time, the second light-emitting region EA2 and the third light-emitting region EA3 can have the same length along the second direction, i.e., the X direction, and the first light-emitting region EA1 can have a shorter length than the second light-emitting region EA2 and the third light-emitting region EA3. In addition, the first light-emitting region EA1 and the second light-emitting region EA2 can have a shorter width than the third light-emitting region EA3, and the widths of the first light-emitting region EA1 and the second light-emitting region EA2 can be the same or different.

[0174] Simultaneously, signal lines 214 and 216 are configured to overlap with the first light-emitting region EA1. Signal lines 214 and 216 include a first auxiliary electrode 214 for providing a low-potential voltage line VSS and a high-potential voltage line 216 for providing a high-potential voltage VDD.

[0175] The width of the first light-emitting region EA1 can be wider than the width of the first auxiliary electrode 214 or the high-potential voltage line 216.

[0176] The first auxiliary electrode 214 and the high-potential voltage line 216 extend along the X direction and alternate with each other along the Y direction. That is, the first auxiliary electrode 214 is disposed in one of two adjacent pixels P along the Y direction, while the high-potential voltage line 216 is disposed in the other of the two adjacent pixels P. The first auxiliary electrode 214 and the high-potential voltage line 216 can be formed of the same material and formed on the same layer. However, this disclosure is not limited thereto.

[0177] The contact hole 270d is formed corresponding to the first auxiliary electrode 214, and the first auxiliary electrode 214 is electrically connected to the cathode (not shown) of the light-emitting diode through the contact hole 270d. Here, the contact hole 270d is substantially disposed between the second portions of the second transparent region TA2.

[0178] Simultaneously, for each pixel P, the first and second portions of the second transparent region TA2 can have different lengths. That is, in the pixel P where the first auxiliary electrode 214 is provided, the second portion of the second transparent region TA2 can have a longer length than the first portion of the second transparent region TA2. Alternatively, in the pixel P where the high-potential voltage line 216 is provided, the first and second portions of the second transparent region TA2 can have the same length. However, this disclosure is not limited thereto. In the pixel P where the high-potential voltage line 216 is provided, the length of the second portion of the second transparent region TA2 can be longer than the length of the first portion of the second transparent region TA2.

[0179] Reference Figures 8 to 10 The cross-sectional structure of the transparent display device 2000 according to the second embodiment of this disclosure is described in detail.

[0180] Figure 8 This is a schematic plan view of the embankment structure of a transparent display device according to the second embodiment of the present disclosure.

[0181] exist Figure 8 In the transparent display device 2000 according to the second embodiment of the present disclosure, the first light-emitting area EA1, the second light-emitting area EA2 and the third light-emitting area EA3, as well as the first transparent area TA1 and the second transparent area TA2 are defined by the embankment 270.

[0182] The embankment 270 has a first opening 270a, a second opening 270b, and a third opening 270c. The first opening 270a corresponds to a first light-emitting region EA1 and a second transparent region TA2, the second opening 270b corresponds to the first transparent region TA1, and the third opening 270c corresponds to each of the second light-emitting region EA2 and the third light-emitting region EA3.

[0183] Here, each of the first opening 270a and the third opening 270c can be configured to correspond to a light-emitting region EA1, EA2 and EA3 comprising a row of subpixels of the same color that are adjacent to each other along the X direction.

[0184] Furthermore, the embankment 270 also has an auxiliary contact hole 270d. The auxiliary contact hole 270d is disposed between the first and second portions of the second transparent region TA2 and overlaps with the first auxiliary electrode 214. Meanwhile, the auxiliary contact hole 270d is not formed above the high-potential voltage line 216.

[0185] An auxiliary contact hole 270d can be formed along the X direction for each pixel P. In this case, the electrical contact area between the second electrode of the light-emitting diode and the first auxiliary electrode 114 can be increased, thereby improving the contact characteristics. Alternatively, the auxiliary contact hole 270d can be formed along the X direction for two pixels P. In this case, problems that may occur in the patterning process of the auxiliary contact hole 270d can be reduced.

[0186] The embankment 270 includes a hydrophilic first embankment 272 and a hydrophobic second embankment 274. The second embankment 274 essentially has a first opening 270a, a second opening 270b, a third opening 270c, and an auxiliary contact hole 270d.

[0187] The first dam portion 272 is disposed along the X-direction between adjacent sub-pixels of the same color, and the second dam portion 274 is disposed between adjacent sub-pixels of different colors. That is, the first dam portion 272 is disposed along the X-direction between adjacent light-emitting regions of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3, and the second dam portion 274 is disposed along the Y-direction between adjacent light-emitting regions of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3. Furthermore, the second dam portion 274 is also disposed between light-emitting regions and transparent regions, more specifically, between the third light-emitting region EA3 and the first transparent region TA1, and between the second light-emitting region EA2 and the second transparent region TA2. Additionally, the second dam portion 274 is also disposed between the first transparent region TA1 and the second transparent region TA2.

[0188] The second embankment 274 has a protrusion corresponding to the auxiliary contact hole 270d. Therefore, the width of the first opening 270a corresponding to the auxiliary contact hole 270d is smaller than the width of the first opening 270a corresponding to the first light-emitting area EA1.

[0189] Meanwhile, the first embankment 272 is also disposed in the second transparent region TA2. Therefore, the light-emitting layer of the first light-emitting region EA1 extends into the second transparent region TA2.

[0190] In the transparent display device 2000 according to the second embodiment of this disclosure, the light-emitting layers of sub-pixels of the same color are connected to each other and formed as a single unit due to the first opening 270a and the third opening 270c, thereby reducing or minimizing the deviation in the amount of dripping between nozzles and uniformly forming the thickness of the light-emitting layer of the sub-pixels. Therefore, non-uniformity is prevented, thereby effectively preventing the degradation of the image quality of the display device.

[0191] exist Figure 9 and Figure 10 The cross-sectional structure of a transparent display device 2000 according to a second embodiment of the present disclosure is shown.

[0192] Figure 9 Is with Figure 8 The cross-sectional view corresponding to line IV-IV'. Figure 10 Is with Figure 8 The cross-sectional view corresponding to line V-V', and Figure 11 Is with Figure 8 The cross-sectional view corresponding to line VI-VI'. (Refer to the reference.) Figure 3 and Figure 4 Describe it.

[0193] like Figure 9 , Figure 10 and Figure 11 As shown, in the transparent display device 2000 according to the second embodiment of the present disclosure, a pixel P is defined on the substrate 200, including a first light-emitting region EA1, a second light-emitting region EA2, a third light-emitting region EA3, a first transparent region TA1, and a second transparent region TA2. Here, the first light-emitting region EA1 and the second light-emitting region EA2 have a smaller width than the third light-emitting region EA3, and the first light-emitting region EA1 and the second light-emitting region EA2 have the same width or different widths.

[0194] The first luminescent region EA1 and the second transparent region TA2 are disposed between the first transparent region TA1 and the second luminescent region EA2, and the second transparent region TA2 is disposed on both sides of the first luminescent region EA1.

[0195] A first auxiliary electrode 214 is formed in a first light-emitting region EA1 on the substrate 200. A buffer layer 220 is formed substantially over the entire surface of the substrate 200, and a thin-film transistor Tr is formed corresponding to a second light-emitting region EA2 and a third light-emitting region EA3 on the buffer layer 220. Specifically, a first thin-film transistor Tr1 and a second thin-film transistor Tr2 are disposed in the second light-emitting region EA2, and a third thin-film transistor Tr3 is disposed in the third light-emitting region EA3. Alternatively, the first thin-film transistor Tr1 may be disposed in the third light-emitting region EA3.

[0196] Here, each of the first thin-film transistor Tr1, the second thin-film transistor Tr2, and the third thin-film transistor Tr3 can have the same characteristics as... Figure 3 The thin-film transistor Tr has the same configuration.

[0197] Then, a passivation layer 250 and a coating layer 255 are sequentially formed on the thin-film transistor Tr, substantially above the entire surface of the substrate 200, and a first electrode 260 is formed on the coating layer 255 in each of the first light-emitting regions EA1, the second light-emitting region EA2 and the third light-emitting region EA3 of each sub-pixel.

[0198] Although not shown in the figure, at least one insulating layer may be further formed between the buffer layer 220 and the passivation layer 250.

[0199] The passivation layer 250 and the coating layer 255 have a drain contact hole 255a that exposes a portion of the thin-film transistor Tr, namely the drain electrode, and the first electrode 260 contacts the drain electrode of the thin-film transistor Tr through the drain contact hole 255a.

[0200] Here, the first electrode 260 in the first light-emitting region EA1 is electrically connected to the first thin-film transistor Tr1 in the second light-emitting region EA2. That is, to prevent coupling, a thin-film transistor is not formed in the first light-emitting region EA1 where the first auxiliary electrode 214 is located, and the first thin-film transistor Tr1 is formed in the second light-emitting region EA2 or the third light-emitting region EA3. The first electrode 260 in the first light-emitting region EA1 can be connected to the first thin-film transistor Tr1 through additional contact holes and / or patterns between the second transparent region TA2 and the second light-emitting region EA2 or the third light-emitting region EA3. Alternatively, the first electrode 260 in the first light-emitting region EA1 can be connected to the first thin-film transistor Tr1 in the second light-emitting region EA2 or the third light-emitting region EA3.

[0201] Simultaneously, a connection pattern 262 is formed on the coating layer 255 between the second light-emitting region EA2 and the second transparent region TA2, and the connection pattern 262 is formed of the same material as the first electrode 260. Specifically, the connection pattern 262 is disposed between the second portion of the second transparent region TA2 and the second light-emitting region EA2. The connection pattern 262 overlaps with the first auxiliary electrode 214.

[0202] The coating layer 255 has contact holes 255c corresponding to the first auxiliary electrode 214, and the connection pattern 262 is electrically connected to the first auxiliary electrode 214 through the contact holes 255c. Here, it is shown that the contact holes 255c are also formed in the passivation layer 250 and the buffer layer 220, but this is not a limitation. Alternatively, a second auxiliary electrode (not shown) may be further formed between the connection pattern 262 and the first auxiliary electrode 214. In this case, the contact holes 255c may be formed only in the coating layer 255 and the passivation layer 250, and the buffer layer 220 may have other contact holes exposing the second auxiliary electrode.

[0203] Next, a dam 270 is formed on the first electrode 260 and the connecting pattern 262. The dam 270 has a first opening 270a, a second opening 270b, and a third opening 270c. The first opening 270a corresponds to the first light-emitting region EA1 and the second transparent region TA2, the second opening 270b corresponds to the first transparent region TA1, and the third opening 270c corresponds to each of the second light-emitting region EA2 and the third light-emitting region EA3. Furthermore, the dam 270 also has an auxiliary contact hole 270d between the second light-emitting region EA2 and the second transparent region TA2, more specifically, between a second portion of the second light-emitting region EA2 and the second transparent region TA2. The auxiliary contact hole 270d corresponds to the first auxiliary electrode 214.

[0204] The first electrode 260 of the first light-emitting region EA1 is exposed through the first opening 270a, the top surface of the coating layer 255 of the first transparent region TA1 is exposed through the second opening 270b, and the first electrode 260 of each of the second light-emitting region EA2 and the third light-emitting region EA3 is exposed through the third opening 270c. Furthermore, the connection pattern 262 is exposed through the auxiliary contact hole 270d.

[0205] The dike section 270 includes a first dike section 272 which is hydrophilic and a second dike section 274 which is hydrophobic.

[0206] The first dike portion 272 is formed between adjacent sub-pixels of the same color. On the other hand, the second dike portion 274 is formed between adjacent sub-pixels of different colors, and exposes the first dike portion 272 disposed between adjacent sub-pixels of the same color. Therefore, in Figures 9 to 11In this configuration, a second embankment 274 is formed between adjacent light-emitting regions in the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3, and a first embankment 272 is formed between adjacent third light-emitting regions EA3. Although not shown in the figure, the first embankment 272 is also formed between adjacent first light-emitting regions EA1 and adjacent second light-emitting regions EA2.

[0207] Furthermore, the second embankment 274 is formed between the adjacent first transparent region TA1 and the second transparent region TA2, and between the adjacent second transparent region TA2 and the second luminous region EA2.

[0208] Simultaneously, the first embankment 272 is also formed in the second transparent region TA2. Furthermore, the first embankment 272 can also be formed below the second embankment 274. Therefore, the first embankment 272 is formed between adjacent light-emitting regions of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3, and also between adjacent first transparent regions TA1 and second transparent regions TA2, and between adjacent second transparent regions TA2 and second light-emitting regions EA2.

[0209] A light-emitting layer 280 is formed on the first electrode 260 exposed through each of the first opening 270a and the third opening 270c. The light-emitting layer 280 includes a red light-emitting layer 280r, a green light-emitting layer 280g, and a blue light-emitting layer 280b, respectively corresponding to the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3. The red light-emitting layer 280r is formed in the second transparent region TA2 and the first light-emitting region EA1.

[0210] The red light-emitting layer 280r, the green light-emitting layer 280g, and the blue light-emitting layer 280b have different thicknesses. For example, the thickness of the green light-emitting layer 280g is less than the thickness of the red light-emitting layer 280r but greater than the thickness of the blue light-emitting layer 280b.

[0211] Here, the light-emitting layer 280 is also formed on the first embankment 272 exposed between adjacent sub-pixels of the same color. The light-emitting layer 280 on the first embankment 272 is connected to the light-emitting layer 280 on the adjacent first electrode 260, thus forming a single unit. That is, as Figure 11 As shown, a blue light-emitting layer 280b is formed on a first embankment 272 between adjacent third light-emitting regions EA3, and the blue light-emitting layer 280b on the first embankment 272 is connected to the blue light-emitting layer 280b of the adjacent third light-emitting region EA3, thereby forming an integral unit.

[0212] The light-emitting layer 280 is formed using a solution process. Here, the light-emitting layer 280 is formed by connecting solutions dropped from different nozzles corresponding to the same color sub-pixel rows and then drying the solutions. Therefore, by reducing or minimizing the deviation in the amount of liquid dropped between the nozzles, the thickness of the film formed in each sub-pixel can be uniformly formed.

[0213] At this point, a red light-emitting layer 280r, which has the narrowest width and the thickest thickness, is formed in both the second transparent region TA2 and the first light-emitting region EA1, thereby ensuring sufficient coverage of the solution dripping area. Therefore, color mixing between the red light-emitting layer 280r and the green light-emitting layer 280g can be prevented.

[0214] Next, a second electrode 290 is formed on the light-emitting layer 280. The first electrode 260, the light-emitting layer 280, and the second electrode 290 constitute a light-emitting diode (LED).

[0215] Here, the second electrode 290 is formed essentially above the entire surface of the substrate 200, and more specifically, essentially above the entire display area where the plurality of pixels P are disposed. That is, the second electrode 290 is formed in all the first light-emitting areas EA1, the second light-emitting areas EA2 and the third light-emitting areas EA3, as well as the first transparent areas TA1 and the second transparent areas TA2, and is also formed on the embankment 270.

[0216] The second electrode 290 is electrically connected to the first auxiliary electrode 214 through the auxiliary contact hole 270d. Specifically, the second electrode 290 is electrically connected to the connection pattern 262 through the auxiliary contact hole 270d, and the connection pattern 262 is electrically connected to the first auxiliary electrode 214 through the contact hole 255c. Therefore, the second electrode 290 is electrically connected to the first auxiliary electrode 214 through the connection pattern 262. Here, the second electrode 290 can directly contact the connection pattern 262.

[0217] In addition, the second electrode 290 is in contact with the coating layer 255 exposed through the second opening 270b in the first transparent region TA1.

[0218] In the transparent display device 2000 according to the second embodiment of the present disclosure, a first embankment 272 and a light-emitting layer 280 are further formed in the second transparent region TA2 compared to the first transparent region TA1. Therefore, the transmittance of the first transparent region TA1 is higher than the transmittance of the second transparent region TA2.

[0219] As described above, in the transparent display device 2000 according to the second embodiment of the present disclosure, a pixel P includes a light-emitting area EA and a transparent area TA, such that image information can be displayed through the light-emitting area EA while surrounding environmental information, such as the background, can be displayed through the transparent area TA.

[0220] Furthermore, in the transparent display device 2000 according to the second embodiment of this disclosure, by forming at least some of the light-emitting layers 280 via a solution process, a fine metal mask can be omitted, thereby reducing manufacturing costs and enabling a display device with large size and high definition.

[0221] Furthermore, the transparent display device 2000 according to the second embodiment of this disclosure is implemented as a top-emitting type, thereby improving brightness and reducing power consumption. Here, since the second electrode 290 is formed to have a relatively thin thickness to transmit light, the resistance of the second electrode 290 may increase, but the resistance of the second electrode 290 can be reduced by electrically connecting the second electrode 290 to the first auxiliary electrode 214 via the connection pattern 262.

[0222] Furthermore, in the transparent display device 2000 according to the second embodiment of the present disclosure, the light-emitting layers 280 of the same color sub-pixels are connected to each other and formed as a whole, thereby reducing or minimizing the deviation of the drip volume between nozzles and uniformly forming the thickness of the light-emitting layer 280 of each sub-pixel.

[0223] Furthermore, the second transparent region TA2 is disposed on both sides of the first light-emitting region EA1 with the smallest size, so that the light-emitting layer 280 with the thickest thickness of the first light-emitting region EA1 extends into the second transparent region TA2, thereby preventing color mixing between the first light-emitting region EA1 and the second light-emitting region EA2.

[0224] Furthermore, the first auxiliary electrode 214 is disposed below the first light-emitting region EA1, which allows for an increase in the width of the first auxiliary electrode 214, thereby further reducing the resistance of the second electrode 290. Additionally, since the size of the auxiliary contact hole 270d can be increased, the contact area between the second electrode 290 and the connecting pattern 262 can be increased, thereby improving the contact characteristics between the second electrode 290 and the connecting pattern 262.

[0225] In this disclosure, since each pixel includes a light-emitting area and a transparent area, it is possible to display image information through the light-emitting area while simultaneously displaying surrounding environmental information, such as the background, through the transparent area.

[0226] Furthermore, the light-emitting areas of the red, green, and blue sub-pixels are configured to have different sizes, and the lifespan of the light-emitting diodes located at each sub-pixel can be uniform, thereby improving the lifespan of the transparent display device.

[0227] Furthermore, the transparent display device is implemented as a top-emitting type, thereby increasing brightness and reducing power consumption. At this time, the second electrode is electrically connected to the auxiliary electrode via a connecting pattern, which reduces the resistance of the second electrode.

[0228] Furthermore, by forming at least a portion of the light-emitting layer via a solution process, a fine metal mask can be omitted, thereby reducing manufacturing costs and enabling large-size and high-definition display devices.

[0229] Furthermore, a second transparent region with a lower transmittance than the first transparent region is provided on both sides of the first light-emitting region, which has the smallest size and in which the light-emitting layer with the thickest thickness is formed, so that the light-emitting layer extends into the second transparent region, thereby preventing color mixing between the first light-emitting region and the second light-emitting region that are adjacent to each other.

[0230] Furthermore, an auxiliary electrode is disposed between the second transparent region and the second light-emitting region, thereby further preventing color mixing between the adjacent first light-emitting region and the second light-emitting region.

[0231] Alternatively, the auxiliary electrode can be positioned below the first light-emitting area, thereby increasing the width of the auxiliary electrode and further reducing the resistance of the second electrode.

[0232] It will be apparent to those skilled in the art that various modifications and variations can be made to the apparatus of this disclosure without departing from the spirit or scope of the embodiments. Therefore, this disclosure is intended to cover modifications and variations of the invention, provided that such modifications and variations fall within the scope of the appended claims and their equivalents.

Claims

1. A transparent display device, comprising: A substrate, on which pixels are defined, including a first light-emitting region, a second light-emitting region, and a third light-emitting region arranged along a first direction, as well as a first transparent region and a second transparent region; A light-emitting diode, wherein the light-emitting diode is disposed in each of the first light-emitting region, the second light-emitting region and the third light-emitting region, and includes a first electrode, a light-emitting layer and a second electrode; as well as An auxiliary electrode extends in a second direction perpendicular to the first direction and is electrically connected to the second electrode. Wherein, the first light-emitting region and the auxiliary electrode are disposed between the first transparent region and the second transparent region, and the second transparent region includes a first portion between the first light-emitting region and the second light-emitting region, and The first transparent region has a higher transmittance than the second transparent region.

2. The transparent display device according to claim 1, wherein, The light-emitting layer in the first light-emitting region extends into the second transparent region.

3. The transparent display device according to claim 1, wherein, The auxiliary electrode is disposed between the second transparent region and the second light-emitting region.

4. The transparent display device according to claim 1, wherein, The second light-emitting region has a size that is larger than the first light-emitting region and smaller than the third light-emitting region.

5. The transparent display device according to claim 1, wherein, The second transparent region also includes a second portion between the first luminescent region and the first transparent region.

6. The transparent display device according to claim 5, wherein, The length of the second portion along the second direction is longer than the length of the first portion along the second direction.

7. The transparent display device according to claim 1, further comprising a dam having a first opening, a second opening, a third opening, and an auxiliary contact hole. in, The first opening corresponds to the first light-emitting area and the second transparent area, the second opening corresponds to the first transparent area, the third opening corresponds to each of the second light-emitting area and the third light-emitting area, and the auxiliary contact hole corresponds to the auxiliary electrode.

8. The transparent display device according to claim 7, wherein, The embankment includes a first embankment that is hydrophilic and a second embankment that is hydrophobic.

9. The transparent display device according to claim 8, wherein, The first embankment and the second embankment are formed as one unit.

10. The transparent display device according to claim 7, wherein, The light-emitting layers of adjacent light-emitting regions along the second direction are connected to each other to form a single unit.

11. The transparent display device according to claim 1, further comprising at least one thin-film transistor between the substrate and the first electrode, wherein, The first electrode is connected to the at least one thin-film transistor.

12. The transparent display device according to claim 1, further comprising a connection pattern formed of the same material as the first electrode and formed on the same layer as the first electrode. in, The second electrode is electrically connected to the auxiliary electrode via the connection pattern.

13. The transparent display device according to claim 1, wherein, The auxiliary electrode overlaps with the first light-emitting area.

14. The transparent display device of claim 13, further comprising at least one thin-film transistor between the substrate and the first electrode. in, The at least one thin-film transistor is connected to the first electrode in the first light-emitting region and is disposed in the second light-emitting region or the third light-emitting region.

15. The transparent display device according to claim 8, wherein, The first dike portion is disposed between adjacent sub-pixels of the same color along the second direction, and the second dike portion is disposed between adjacent sub-pixels of different colors.

Images