A heat dissipation and packaging structure for an IGBT module with near-hot spots

Abstract

The present invention provides a near-hotspot IGBT module heat dissipation and packaging structure, which relates to the field of electronic packaging technology, including a packaging base plate, the upper surface of the packaging base plate is integrally and fixedly connected to a packaging outer frame, four module mounting holes are respectively opened at the four corners of the upper end of the packaging base plate, a DBC heat dissipation component is arranged on the packaging base plate and located inside the packaging outer frame, the upper surface of the DBC heat dissipation component is respectively provided with an IGBT chip, a diode and two rows of connecting busbars through a solder layer, a packaging cover plate is arranged above the packaging outer frame, and the lower end of the lower frame of the packaging cover is integrally and fixedly connected to the lower frame of the packaging cover. This scheme is achieved by arranging a DBC heat dissipation component at the lower end of the IGBT chip and the diode, and gluing and fixing the lower frame of the packaging cover at the lower end of the upper packaging cover plate to the packaging outer frame, passing the connecting busbar through the busbar through-hole at the upper end to connect to the connecting terminal, and then connecting to the external device through the connecting terminal, thereby completing the packaging structure.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic packaging, in particular to a near-hotspot IGBT module heat dissipation and packaging structure. Background Art

[0002] With the advent of the post-Moore era, electronic component packaging technology is evolving from traditional two-dimensional packaging to 2.5-dimensional (2.5D) or higher-level three-dimensional (3D) packaging. While 3D packaging technology has increased the operating speed of electronic components and enabled miniaturization and multifunctionality of electronic devices, it also leads to further concentration of heat generated by the devices, making it impossible to effectively conduct heat using conventional heat conduction technologies. In modern electronic components, a considerable amount of power is converted into heat, and the dissipated heat seriously threatens the operational reliability of electronic devices. For example, application number CN202120754742.9 discloses an electronic packaging heat sink assembly with a heat dissipation structure, comprising a base, a chip, and pins. The base is encapsulated with resin above, a lower heat conducting plate is attached below the chip, and multiple lower heat conducting rods are fixedly connected to the periphery of the lower heat conducting plate, extending to the exterior of the base. An upper heat conducting plate is attached above the chip, and multiple upper heat conducting rods are fixedly connected to the periphery of the upper heat conducting plate, extending to the exterior of the resin. This solution improves the thermal conductivity by setting up thermal conductive plates on the top and bottom of the chip, and filling the gap between the thermal conductive plate and the chip with a filling layer. The thermal conductive rod is fixedly connected around the thermal conductive plate, and the thermal conductive rod extends to the outside of the packaging structure. The contact between the thermal conductive plate and the air improves the heat exchange efficiency, and the good conductivity of the metal is used to dissipate the heat of the chip, thereby improving the heat dissipation effect of the packaging structure.

[0003] Due to the high heat dissipation requirements of power devices, thermal management is a crucial aspect of power packaging design. Thermal management has become one of the primary issues hindering the development of modern electronic components. Thermal management of power electronic devices involves achieving high heat dissipation performance through efficient heat dissipation technologies and rational structural design. However, with the increasing integration density and heat flux of IGBT modules, achieving efficient heat dissipation is a significant constraint on the widespread application of high-power IGBT modules.

[0004] Therefore, it is necessary to improve the existing heat dissipation technology to solve the shortcomings of the existing technology. Summary of the Invention

[0005] (1) Technical problems solved

[0006] In response to the shortcomings of the existing technology, the present invention provides a near-hotspot IGBT module heat dissipation and packaging structure, which solves the problem that thermal management is a more critical aspect in power packaging design due to the high heat dissipation of power devices. The problem of "thermal management" has become one of the primary problems hindering the development of modern electronic components. Thermal management of power electronic devices refers to achieving high heat dissipation performance of devices through efficient heat dissipation technology and reasonable structural design. However, with the continuous improvement of the integration of IGBT modules and the continuous increase in heat flux density, how to achieve efficient heat dissipation has restricted the widespread application of high-power IGBT modules.

[0007] (2) Technical solution

[0008] To achieve the above objectives, the present invention is implemented through the following technical solutions: a near-hotspot IGBT module heat dissipation and packaging structure, including a packaging base plate, the upper surface of the packaging base plate is integrally and fixedly connected to the packaging outer frame, four module mounting holes are respectively opened at the four corners of the upper end of the packaging base plate, a DBC heat dissipation component is arranged on the packaging base plate and located inside the packaging outer frame, the upper surface of the DBC heat dissipation component is respectively provided with an IGBT chip, a diode and two rows of connecting busbars through a solder layer, a packaging cover is arranged above the packaging outer frame, and the lower end of the lower frame of the packaging cover is integrally and fixedly connected to the lower frame of the packaging cover.

[0009] Preferably, a plurality of terminal mounting heads are integrally provided on the upper end of the packaging cover plate, and a connecting terminal is fixedly mounted on each of the terminal mounting heads.

[0010] Preferably, a plurality of busbar through-holes are provided on the lower end surface of the packaging cover plate, and the busbar through-holes correspond one-to-one to the connecting busbars.

[0011] Preferably, the DBC heat dissipation component includes: a copper base, a ceramic layer, a bonding copper layer, a mounting rubber pad and a heat dissipation copper layer. A ceramic layer is provided at the lower end of the copper base, a bonding copper layer is provided at the lower end of the ceramic layer, the lower end of the bonding copper layer is integrally fixedly connected with the heat dissipation copper layer, and four mounting rubber pads are fixedly installed at the four corners of the lower end surface of the bonding copper layer.

[0012] Preferably, the heat dissipation copper layer includes: a heat dissipation copper shell, an air inlet, an air outlet, an air inlet duct, an air outlet duct, an air flow branch channel, an air flow return channel and an air flow branch channel. The heat dissipation copper shell is respectively provided with an air inlet and an air outlet at both ends, wherein the rear end of the air inlet is provided with an air inlet duct, the rear end of the air outlet is provided with an air outlet duct, the rear end of the air outlet duct is provided with an air flow branch channel, the rear end of the air outlet duct is provided with an air flow return channel, and the air flow branch channel and the air flow return channel are connected through a number of air flow branches.

[0013] Preferably, a plurality of heat conducting plates are integrally and fixedly connected to the inner wall of each of the air flow branches.

[0014] Preferably, the heat dissipating copper shell is integrally bonded to the bonding copper layer at the upper end.

[0015] (3) Beneficial effects

[0016] The present invention provides a near-hotspot IGBT module heat dissipation and packaging structure, which has the following beneficial effects:

[0017] This solution is based on the above-mentioned background technology. Due to the high heat dissipation of power devices, thermal management is a more critical aspect in power packaging design. The problem of "thermal management" has become one of the primary problems hindering the development of modern electronic components. Thermal management of power electronic devices refers to achieving high heat dissipation performance of devices through efficient heat dissipation technology and reasonable structural design. However, with the continuous improvement of the integration of IGBT modules and the continuous increase in heat flux density, how to achieve efficient heat dissipation restricts the widespread application of high-power IGBT modules. This solution is achieved by setting a DBC heat dissipation component at the lower end of the IGBT chip and the diode, and gluing and fixing the lower frame of the packaging cover at the lower end of the upper packaging cover plate to the outer frame of the packaging, connecting the busbar through the busbar perforation at the upper end to connect to the connecting terminal, and then connecting to the external device through the connecting terminal. At this point, the packaging structure is completed;

[0018] The upper package cover and the outer package frame can protect and package the internal IGBT chip and diode.

[0019] The heat generated by the IGBT chip and diode connected at the upper end during operation is collected through the copper substrate in the DBC heat dissipation component and transferred to the ceramic layer at the lower end, and then conducted again through the bonding copper layer at the lower end of the ceramic layer. The integration of the bonding copper layer is achieved through heating and pressurizing. The new lower copper layer and the heat dissipation copper shell are ultrasonically vibrated to achieve the diffusion and recombination of copper ions, integrating the two parts together in the same root and copper-copper bonding method, and firmly combining the three components through eutectic bonding. The excess part of the pre-ceramic layer is then cut off by wire cutting, and the cut surface is processed by a polishing process to finally form a new DBC layer structure.

[0020] Among them, an air flow with a relatively low outside temperature is blown in through the air inlet in the heat dissipation copper layer, and enters the air flow branch channel through the air inlet duct, so that the air flow branches and becomes a small branch air flow, and enters the air flow branch channel to contact the heat conducting plate, taking away the heat thereon, and converging from the air flow return channel, and discharged from the air outlet duct and air outlet, thereby achieving the effect of rapid cooling and heat dissipation, making its thermal conductivity efficiency better. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0022] Figure 2 It is a bottom view structural schematic diagram of the present invention;

[0023] Figure 3 Schematic diagram of the structure of the DBC heat dissipation component of the present invention;

[0024] Figure 4 Schematic diagram of the bottom view of the DBC heat dissipation assembly of the present invention;

[0025] Figure 5 Schematic diagram of the side view of the DBC heat dissipation component of the present invention;

[0026] Figure 6 For the present invention Figure 5 Schematic diagram of the cross-sectional structure along line aa;

[0027] Figure 7 For the present invention Figure 5 Schematic diagram of the cross-sectional structure along the bb line;

[0028] Figure 8 For the present invention Figure 7 Schematic diagram of the enlarged structure at point A in the middle.

[0029] Among them, 1. Package base plate; 2. Package frame; 3. DBC heat dissipation component; 301. Copper base; 302. Ceramic layer; 303. Bonding copper layer; 304. Installing rubber pads; 305. Heat dissipation copper layer; 3051. Heat dissipation copper shell; 3052. Air inlet; 3053. Air outlet; 3054. Air inlet duct; 3055. Air outlet duct; 3056. Air flow branch channel; 3057. Air flow return channel; 3058. Air flow branch channel; 3059. Thermal conductive sheet; 4. IGBT chip; 5. Diode; 6. Solder layer; 7. Connecting busbar; 8. Package cover; 9. Terminal mounting head; 10. Connecting terminal; 11. Package cover bottom frame; 12. Busbar perforation; 13. Module mounting hole. DETAILED DESCRIPTION

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0031] Example:

[0032] like Figures 1 to 8As shown, an embodiment of the present invention provides a near-hotspot IGBT module heat dissipation and packaging structure, including a packaging base plate 1, the upper end surface of the packaging base plate 1 is integrally and fixedly connected to a packaging outer frame 2, four module mounting holes 13 are respectively opened at the four corners of the upper end of the packaging base plate 1, a DBC heat dissipation component 3 is arranged on the packaging base plate 1 and located inside the packaging outer frame 2, the upper end surface of the DBC heat dissipation component 3 is respectively provided with an IGBT chip 4, a diode 5 and two rows of connecting busbars 7 through a solder layer 6, a packaging cover plate 8 is arranged above the packaging outer frame 2, the lower end of the packaging cover lower frame 11 is integrally and fixedly connected to the packaging cover lower frame 11, a plurality of terminal mounting heads 9 are integrally provided on the upper end of the packaging cover plate 8, a connecting terminal 10 is fixedly installed on each of the terminal mounting heads 9, a plurality of busbar through-holes 12 are opened on the lower end surface of the packaging cover plate 8, and the busbar through-holes 12 correspond one-to-one to the connecting busbars 7.

[0033] Through the above technical solution, a DBC heat dissipation component 3 is set at the lower end of the IGBT chip 4 and the diode 5, and the lower frame 11 of the packaging cover at the lower end of the packaging cover plate 8 at the upper end is glued and fixed to the packaging outer frame 2, and the busbar 7 is connected to the connecting terminal 10 through the busbar through-hole 12 at the upper end, and then connected to the external device through the connecting terminal 10. At this point, the packaging structure is completed.

[0034] In this embodiment, the DBC heat dissipation component 3 includes: a copper base 301, a ceramic layer 302, a bonding copper layer 303, a mounting rubber pad 304 and a heat dissipation copper layer 305. The lower end of the copper base 301 is provided with a ceramic layer 302, the lower end of the ceramic layer 302 is provided with a bonding copper layer 303, the lower end of the bonding copper layer 303 is integrally fixedly connected with the heat dissipation copper layer 305, and four mounting rubber pads 304 are fixedly installed at the four corners of the lower end surface of the bonding copper layer 303.

[0035] Through the above technical solution, the heat generated by the IGBT chip 4 and the diode 5 connected at the upper end during operation is collected through the copper base 301 in the DBC heat dissipation component 3 and transferred to the ceramic layer 302 at the lower end, and then conducted again through the bonding copper layer 303 at the lower end of the ceramic layer 302. The integration of the bonding copper layer 303 is achieved through heating and pressurization. The new lower copper layer and the heat dissipation copper shell 3051 are ultrasonically vibrated to achieve the diffusion and recombination of copper ions, and the two parts are integrated together in the same root and copper-copper bonding manner, and the three components are firmly combined by eutectic bonding; then the excess part of the pre-ceramic layer is cut off by wire cutting, and the cut surface is processed by a polishing process to finally form a new DBC layer structure.

[0036] In this embodiment, the heat dissipation copper layer 305 includes: a heat dissipation copper shell 3051, an air inlet 3052, an air outlet 3053, an air inlet duct 3054, an air outlet duct 3055, an air flow branch duct 3056, an air flow return duct 3057 and an air flow branch duct 3058. The heat dissipation copper shell 3051 is respectively provided with an air inlet 3052 and an air outlet 3053 at both ends, wherein the air inlet 3052 is provided with an air inlet duct 3054 at the rear end, and the air outlet 3053 is provided with an air flow return duct 3057 at the rear end. There is an air outlet duct 3055, and an air flow branch channel 3056 is provided at the rear end of the air outlet duct 3055. An air flow return channel 3057 is provided at the rear end of the air outlet duct 3055. The air flow branch channel 3056 and the air flow return channel 3057 are connected through a number of air flow branches 3058. A number of heat conducting plates 3059 are integrally fixedly connected to the inner wall of each of the air flow branches 3058, and the heat dissipating copper shell 3051 is integrally bonded to the bonding copper layer 303 at the upper end.

[0037] Through the above technical solution, an air flow with a relatively low external temperature is blown in through the air inlet 3052 in the heat dissipation copper layer 305, and enters the air flow branch channel 3056 through the air inlet duct 3054, so that the air flow branches and becomes a small branch air flow, and enters the air flow branch channel 3058 to contact the heat conducting plate 3059, taking away the heat thereon, and converging from the air flow return channel 3057, and discharged from the air outlet duct 3055 and the air outlet 3053, thereby achieving the effect of rapid cooling and heat dissipation, and making its thermal conductivity efficiency better.

[0038] Working principle:

[0039] This solution is achieved by setting a DBC heat dissipation component 3 at the lower end of the IGBT chip 4 and the diode 5, and gluing and fixing the lower edge 11 of the package cover at the lower end of the package cover plate 8 at the upper end to the package outer frame 2, and connecting the busbar 7 through the busbar through-hole 12 at the upper end to the connection terminal 10, and then connecting to the external device through the connection terminal 10. At this point, the package structure is completed;

[0040] The upper package cover 8 and the package outer frame 2 can protect and package the internal IGBT chip 4 and diode 5;

[0041] The heat generated by the IGBT chip 4 and the diode 5 connected at the upper end during operation is collected by the copper base 301 in the DBC heat dissipation component 3 and transferred to the ceramic layer 302 at the lower end, and then conducted again through the bonding copper layer 303 at the lower end of the ceramic layer 302. The integration of the bonding copper layer 303 is achieved by heating and pressurizing. The new lower copper layer and the heat dissipation copper shell 3051 are ultrasonically vibrated to achieve the diffusion and recombination of copper ions, and the two parts are integrated together by the same root and copper-copper bonding. The three components are firmly bonded by eutectic bonding. The excess part of the pre-ceramic layer is then cut off by wire cutting, and the cut surface is processed by a polishing process to finally form a new DBC layer structure.

[0042] Among them, an air flow with a relatively low external temperature is blown in through the air inlet 3052 in the heat dissipation copper layer 305, and enters the air flow branch channel 3056 through the air inlet duct 3054, so that the air flow branches and becomes a small branch air flow, and enters the air flow branch channel 3058 to contact the heat conducting plate 3059, taking away the heat thereon, and converging from the air flow return channel 3057, and discharged from the air outlet duct 3055 and the air outlet 3053, thereby achieving the effect of rapid cooling and heat dissipation, making its thermal conductivity efficiency better.

[0043] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not limitations on the implementation methods of the present invention. For ordinary technicians in the relevant field, other different forms of changes or modifications can be made based on the above description. It is impossible to list all the implementation methods here. Any obvious changes or modifications derived from the technical solution of the present invention are still within the scope of protection of the present invention.

Claims

1. A near-hotspot IGBT module heat dissipation and packaging structure, comprising a packaging base plate (1), characterized in that: The upper surface of the package base plate (1) is integrally fixedly connected to the package outer frame (2); four module mounting holes (13) are respectively provided at the four corners of the upper end of the package base plate (1); a DBC heat dissipation component (3) is provided on the package base plate (1) and located inside the package outer frame (2); an IGBT chip (4), a diode (5) and two rows of connecting busbars (7) are respectively provided on the upper surface of the DBC heat dissipation component (3) through a solder layer (6); a package cover plate (8) is provided above the package outer frame (2); and the lower end of the package cover plate (8) is integrally fixedly connected to the package cover lower frame (11); The DBC heat dissipation component (3) comprises: a copper base (301), a ceramic layer (302), a bonding copper layer (303), a mounting rubber pad (304) and a heat dissipation copper layer (305); the ceramic layer (302) is provided at the lower end of the copper base (301); the bonding copper layer (303) is provided at the lower end of the ceramic layer (302); the heat dissipation copper layer (305) is integrally fixedly connected to the lower end of the bonding copper layer (303); and four mounting rubber pads (304) are fixedly mounted at the four corners of the lower end surface of the bonding copper layer (303).

2. The heat dissipation and packaging structure of a near-hotspot IGBT module according to claim 1, characterized in that: A plurality of terminal mounting heads (9) are integrally provided on the upper end of the packaging cover plate (8), and a connecting terminal (10) is fixedly mounted on each of the terminal mounting heads (9).

3. The heat dissipation and packaging structure of a near-hotspot IGBT module according to claim 2, characterized in that: A plurality of busbar through-holes (12) are provided on the lower end surface of the packaging cover plate (8), and the busbar through-holes (12) correspond one-to-one to the connecting busbars (7).

4. The heat dissipation and packaging structure of a near-hotspot IGBT module according to claim 3, characterized in that: The heat dissipation copper layer (305) comprises: a heat dissipation copper shell (3051), an air inlet (3052), an air outlet (3053), an air inlet duct (3054), an air outlet duct (3055), an air flow branch channel (3056), an air flow return channel (3057) and an air flow branch channel (3058). The heat dissipation copper shell (3051) is provided with an air inlet (3052) and an air outlet (3053) at both ends, wherein the air inlet (3052) is provided with an air inlet duct (3054) at the rear end, the air outlet (3053) is provided with an air outlet duct (3055) at the rear end, the air flow branch channel (3056) is provided at the rear end, and the air flow return channel (3057) is provided at the rear end of the air outlet duct (3055). The air flow branch channel (3056) and the air flow return channel (3057) are connected via a plurality of air flow branch channels (3058).

5. The heat dissipation and packaging structure of a near-hot-spot IGBT module according to claim 4, characterized in that: A plurality of heat conducting plates (3059) are integrally and fixedly connected to the inner wall of each of the airflow branches (3058).

6. The heat dissipation and packaging structure of a near-hot-spot IGBT module according to claim 5, characterized in that: The heat dissipation copper housing (3051) is integrally bonded to the bonding copper layer (303) at the upper end.

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