Electroluminescent display device

Abstract

An electroluminescent display device includes a plurality of sub-pixel circuit units arranged in a matrix form, at least one gate line disposed between the plurality of sub-pixel circuit units and extending along a first direction, a plurality of first data line groups and a plurality of second data line groups alternately disposed between the plurality of sub-pixel circuit units and extending along a second direction, a plurality of common lines disposed within the first data line groups or the second data line groups and extending along the second direction, and a plurality of anode lines disposed within the first data line groups or the second data line groups and extending along the second direction.

Description

[0001] This application is a divisional application of the original invention patent application No. 201680052774.6 (International Application No.: PCT / KR2016 / 012255, Application Date: October 28, 2016, Invention Title: Electroluminescent Display Device). Technical Field

[0002] This disclosure relates to a top-emitting electroluminescent display device that improves the brightness uniformity of the electroluminescent display device by reducing the potential deviation between the anode and cathode according to the position of each pixel within the pixel area of ​​the electroluminescent display device. The electroluminescent display device of this disclosure can also improve potential uniformity as the size of the electroluminescent display device increases. Background Technology

[0003] Organic light-emitting display devices (OLEDs), as self-emissive display devices, do not require a separate or additional light source like liquid crystal displays (LCDs), thus enabling them to be lightweight and thin. Furthermore, OLEDs are advantageous not only in terms of low power consumption due to their low driving voltage, but also in terms of fast response speed, wide viewing angle, and infinite contrast ratio.

[0004] An organic light-emitting display device's pixel region comprises multiple sub-pixels. Each sub-pixel includes an organic light-emitting diode (OLED). Each OLED includes an anode as a pixel electrode, an organic light-emitting layer, and a cathode as a common electrode. The anode voltage ELVDD is supplied to the pixel electrode via a driving transistor, while the cathode voltage ELVSS is supplied to the common electrode.

[0005] In top-emitting organic light-emitting display devices, reliability is required to protect the organic light-emitting layer from effects such as oxygen and moisture. Therefore, encapsulation units are formed to protect the organic light-emitting layer from oxygen, moisture, physical shock, and / or debris that may occur during the manufacturing process. Encapsulation units can be selected from the following: glass encapsulation units; transparent encapsulation units in which inorganic and organic layers are alternately stacked; or barrier-and-fill transparent encapsulation units in which inorganic layers cover the organic light-emitting diodes on a first substrate, transparent resin fills the area between the first and second substrates, and a dam surrounds the transparent resin.

[0006] Furthermore, in top-emitting organic light-emitting display devices, the translucent (sub-translucent) common electrode is a magnesium-silver (Mg:Ag) electrode, a ytterbium (Yb) electrode, and / or an alloy thereof to release light emitted towards the top side at the organic light-emitting layer. To achieve translucent properties, the thickness of the common electrode can be very thin, for example, in... However, generally, reducing the thickness increases the resistance of the common electrode.

[0007] In large-size top-emitting organic light-emitting display devices, the resistance of the common electrode is often high. Therefore, if the distance from the cathode voltage supply unit that can provide the cathode voltage ELVSS to the common electrode increases, uneven brightness will occur. Summary of the Invention

[0008] The inventors of this disclosure have researched and developed electroluminescent display devices (e.g., self-emissive display devices such as organic light-emitting display devices and / or quantum dot light-emitting display devices) that include a cathode line (i.e., an auxiliary common line) to improve the uniformity of the cathode voltage according to the position of the pixels within a pixel region AA of the electroluminescent display device. This enables the reduction of resistance differences in the common electrode according to the position of the pixel region AA. However, if the auxiliary common line is implemented, this raises the following exemplary problems that need to be addressed.

[0009] First, if the width and thickness of the common line are reduced, the line resistance increases, thereby degrading the performance of the common line. On the other hand, if the width and thickness of the common line are increased, the area of ​​the circuit elements operating the sub-pixels (e.g., storage capacitors, switching elements, and driving elements) can be reduced, which can lead to other problems.

[0010] For example, if the line resistance of the common line increases, the uniformity of the cathode voltage in the electroluminescent display device deteriorates, thereby increasing the brightness non-uniformity of the electroluminescent display device. Furthermore, if the line resistance of the common line increases, the amount of heat generated at the common line also increases, thus increasing undesirable thermal stress.

[0011] Alternatively, reducing the line resistance of the common line can improve the uniformity of the cathode voltage in the electroluminescent display device. However, increasing the area of ​​the common line reduces the area of ​​the storage capacitor. Therefore, the capacitance of the storage capacitor can be reduced, and the voltage level supplied to the sub-pixels of the electroluminescent display device can be increased, thereby increasing power consumption and temperature, or reducing the brightness of the electroluminescent display device due to insufficient charging of the image signal at the sub-pixels.

[0012] Furthermore, if the area of ​​the common line increases, the channel area of ​​the driving transistor decreases. Therefore, the current driving capability of the driving transistor also decreases, resulting in an increase in the voltage level of the image signal in the electroluminescent display device.

[0013] Therefore, if the aforementioned issues exist, it may be difficult to increase the integration of subpixels, making it difficult to achieve electroluminescent display devices with high integration and high resolution. For example, a display device of approximately 55 inches may have problems achieving resolutions higher than 80 pixels per inch (ppi), such as in a 4K ultra-high-definition display.

[0014] Secondly, when the common line is connected to the common electrode, the electroluminescent layer (e.g., an organic light-emitting layer or a quantum dot light-emitting layer) disposed between the common line and the common electrode has insulating properties. Therefore, the electroluminescent layer should not be present at the common line contact unit configured to connect the common electrode and the electroluminescent layer. However, because electroluminescent layers such as organic light-emitting layers are easily damaged by oxygen, moisture, hydrogen, etchants, or high temperatures, there are manufacturing limitations and / or difficulties associated with the interconnection of the common line and the common electrode. Furthermore, specific areas are required to configure the common line contact unit and the common electrode. Therefore, depending on the configuration of the contact unit, it may be difficult to achieve a high-resolution electroluminescent display device.

[0015] Third, the common lines can be configured such that multiple lines are placed in the pixel region AA and spaced apart from each other. In this case, due to manufacturing process limitations (e.g., photolithography or etching processes), the thickness and width of each line may vary. Therefore, unless the line resistance variation decreases, the uniformity of brightness in the pixel region AA will be reduced.

[0016] Fourth, electroluminescent display devices may also include an additional metal layer forming common lines. However, in this case, the manufacturing process becomes more complex and the manufacturing cost increases. On the other hand, if the common lines are formed without an additional metal layer, the area of ​​the common lines increases the difficulty in designing high-resolution electroluminescent display devices. In particular, it may be difficult to optimize the layout of various lines to increase the resolution of high-resolution electroluminescent display devices.

[0017] Fifth, the cathode voltage supply unit can be configured to surround the non-pixel area (peripheral area) to suppress the increase in cathode voltage level. However, in this case, the width of the bezel of the electroluminescent display device will increase.

[0018] To address the aforementioned exemplary drawbacks, an exemplary aspect of this disclosure is to provide a high-resolution electroluminescent display device including a common line (i.e., an auxiliary line) capable of sufficiently reducing the line resistance of the common electrode.

[0019] Another exemplary aspect of this disclosure is to provide a high-resolution electroluminescent display device that includes contact units of auxiliary lines capable of reducing the area of ​​a common line contact unit configured to connect a common electrode (i.e., a cathode).

[0020] Therefore, another exemplary aspect of this disclosure is to provide a high-resolution electroluminescent display device that includes auxiliary lines capable of achieving narrow bezels and reducing (or improving) brightness uniformity due to variations in line resistance between multiple common lines.

[0021] Therefore, another exemplary aspect of this disclosure is to provide a high-resolution electroluminescent display device capable of optimizing the layout of at least common lines, anode lines, gate lines and data lines within a pixel region AA.

[0022] An exemplary aspect of this disclosure provides an electroluminescent display device comprising: a pixel circuit unit, the pixel circuit unit including sub-pixel circuit units; a first data line group, the first data line group including a pair of data lines disposed on both sides of the pixel circuit unit and extending in a second direction; a second data line group, the second data line group including another pair of data lines disposed between the sub-pixel circuit units and extending in the second direction; a gate line, the gate line being disposed between the sub-pixel circuit units and extending in a first direction intersecting the first data line group and the second data line group; and a common line and an anode line, the common line and the anode line being alternately disposed along the second direction and disposed between the pair of data lines of the first data line group.

[0023] According to this disclosure, the brightness uniformity of the top-emitting electroluminescent display device is improved by optimizing the auxiliary line structure, anode line structure, gate line structure, and data line structure.

[0024] Furthermore, the display device of this disclosure increases the aperture ratio of the pixel electrode in the pixel region by reducing the area of ​​the common line contact unit and the common electrode.

[0025] Furthermore, the display device disclosed herein improves brightness uniformity by reducing the variation in line resistance between common lines, while simultaneously achieving a narrow bezel.

[0026] Further details of embodiments of the present disclosure are disclosed in the detailed description and accompanying drawings. It should be noted that the purpose of this disclosure is not limited to the above-described objectives, and other objectives of the disclosure will be apparent to those skilled in the art from the following description. Attached Figure Description

[0027] The above and other aspects, features and other advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings:

[0028] Figure 1 This is a schematic plan view illustrating the circuit configuration of a pixel region of an electroluminescent display device 100 according to an exemplary embodiment of the present disclosure;

[0029] Figure 2 This is an example based on Figure 1 A schematic plan view of the configuration of pixel circuit units, pixel electrodes electrically connected to a common line, and common line contact units of an electroluminescent display device according to an exemplary embodiment shown.

[0030] Figure 3 This is an example based on Figure 2 A schematic plan view of the black background and color filter on the pixel electrode of the electroluminescent display device of the exemplary embodiment shown;

[0031] Figure 4 This is a schematic cross-sectional view illustrating the arrangement of a first sub-pixel circuit unit, a first sub-pixel electrode, and a first color filter in an electroluminescent display device 100 according to an exemplary embodiment of the present disclosure.

[0032] Figure 5 This is a schematic cross-sectional view illustrating the common line contact unit of an electroluminescent display device 100 according to an exemplary embodiment of the present disclosure;

[0033] Figure 6 This is a schematic plan view illustrating an electroluminescent display device 600 according to another exemplary embodiment of the present disclosure;

[0034] Figure 7 This is an example Figure 6 A schematic cross-sectional view of the common line welding unit of the electroluminescent display device shown;

[0035] Figure 8 This is a schematic plan view illustrating an electroluminescent display device 800 according to yet another exemplary embodiment of the present disclosure;

[0036] Figure 9 This is an example Figure 8 A schematic cross-sectional view of the common line welding unit of the electroluminescent display device shown;

[0037] Figure 10 This is a schematic plan view illustrating an electroluminescent display device 1000 according to yet another exemplary embodiment of the present disclosure;

[0038] Figure 11 This is an example Figure 10 A schematic cross-sectional view of the arrangement of the first sub-pixel circuit unit, the first sub-pixel electrode, and the first color filter in the electroluminescent display device shown.

[0039] Figure 12 It is along Figure 10 A schematic cross-sectional view of line A-A' illustrates the structure of the auxiliary common line adjacent to the common line welding unit;

[0040] Figure 13 This is a schematic plan view illustrating an electroluminescent display device 1300 according to yet another exemplary embodiment of the present disclosure;

[0041] Figure 14 This is an example Figure 13 A schematic cross-sectional view of the structure of the auxiliary common line adjacent to the common line contact unit in the electroluminescent display device shown;

[0042] Figure 15 This is a schematic plan view illustrating an electroluminescent display device 1500 according to yet another exemplary embodiment of the present disclosure;

[0043] Figure 16 This is a schematic plan view illustrating an electroluminescent display device 1600 according to yet another exemplary embodiment of the present disclosure;

[0044] Figure 17 This is a schematic plan view illustrating an electroluminescent display device 1700 according to yet another exemplary embodiment of the present disclosure;

[0045] Figure 18 This is an example Figure 17 A schematic cross-sectional view of the common line welding unit of the electroluminescent display device shown;

[0046] Figure 19 This is a schematic plan view illustrating an electroluminescent display device 1900 according to yet another exemplary embodiment of the present disclosure;

[0047] Figure 20 This is a schematic plan view illustrating an electroluminescent display device 2000 according to yet another exemplary embodiment of the present disclosure;

[0048] Figure 21 This is a schematic plan view illustrating an electroluminescent display device 2100 according to yet another exemplary embodiment of the present disclosure;

[0049] Figure 22 This is a schematic plan view illustrating an electroluminescent display device 2200 according to yet another exemplary embodiment of the present disclosure; and

[0050] Figure 23 This is a schematic plan view illustrating an electroluminescent display device 2300 according to yet another exemplary embodiment of the present disclosure. Detailed Implementation

[0051] The advantages and features of this disclosure and its implementation methods will become clearer from the exemplary embodiments described below with reference to the accompanying drawings. However, this disclosure is not limited to the following exemplary embodiments, but can be implemented in various different forms. These exemplary embodiments are provided only to make this disclosure more complete and to fully provide those skilled in the art to which this disclosure pertains, and the invention will be defined by the appended claims.

[0052] The shapes, dimensions, ratios, angles, numbers, etc., illustrated in the accompanying drawings to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Throughout this specification, the same reference numerals generally denote the same elements. Furthermore, detailed descriptions of known related technologies may be omitted in the following description to avoid unnecessarily obscuring the subject matter of this disclosure. Terms such as “comprising,” “having,” “including,” and “consisting of” as used herein are generally intended to allow for the addition of other components unless used in conjunction with the term “only.” Unless explicitly stated otherwise, any reference to the singular may include the plural.

[0053] Even if not explicitly stated, components are interpreted as including both normal error range and normal tolerance range.

[0054] When using terms such as “on,” “above,” “below,” and “next to” to describe the positional relationship between two components, one or more components may be placed between the two components unless these terms are used in conjunction with the terms “closely to” or “directly.”

[0055] Although the terms "first," "second," etc., are used to describe different components, these components are not limited by these terms. These terms are only used to distinguish one component from others. Therefore, the first component mentioned below can be the second component within the technical concept of this disclosure.

[0056] The dimensions and thicknesses of each component illustrated in the accompanying drawings are for illustrative purposes only, and this disclosure is not limited to the dimensions and thicknesses of each illustrated component.

[0057] The features of the various embodiments of this disclosure may be combined in part or in whole, or combined with each other, and can be linked and operated in various technical ways as can be fully understood by those skilled in the art, and these embodiments can be performed independently of each other or in conjunction with each other.

[0058] The electroluminescent display device 100 according to an exemplary embodiment of the present disclosure is a top-emitting electroluminescent display device. Figure 1 This is a plan view illustrating the circuit configuration of the pixel area of ​​an electroluminescent display device 100.

[0059] For ease of explanation, Figure 1 Examples of components of an electroluminescent display device include a common line 104, an anode line 106, a gate line 108, a data line 110, and a pixel circuit unit 120.

[0060] Multiple pixel circuit units 120 are disposed in pixel regions AA on a first substrate 102 (not shown).

[0061] For example, the pixel circuit unit 120 may be configured as a matrix or array. Furthermore, the pixel circuit unit 120 may be referred to as a circuit configured to control sub-pixels including light-emitting diodes. In the following description, the light-emitting diode is considered to be an organic light-emitting diode only for ease of description. However, this disclosure is not limited to organic light-emitting diodes and may include any self-emissive electroluminescent element such as a quantum dot light-emitting diode.

[0062] Pixel circuit unit 120 is configured to include a first sub-pixel circuit unit 121, a second sub-pixel circuit unit 122, a third sub-pixel circuit unit 123, and a fourth sub-pixel circuit unit 124. That is, pixel circuit unit 120 can be referred to as an aggregate of sub-pixel circuit units configured to operate at least three primary color organic light-emitting diodes.

[0063] For example, the first sub-pixel circuit unit 121 may be a circuit unit operating the red sub-pixel; the second sub-pixel circuit unit 122 may be a circuit unit operating the green sub-pixel; the third sub-pixel circuit unit 123 may be a circuit unit operating the blue sub-pixel; and the fourth sub-pixel circuit unit 124 may be a circuit unit operating the white sub-pixel. However, this disclosure is not limited thereto.

[0064] The gate line 108 is connected to each of the adjacent sub-pixel circuit units 121, 122, 123 and 124.

[0065] Data line 110 is configured to include a first data line 111, a second data line 112, a third data line 113, and a fourth data line 114. Furthermore, each of the data lines is configured to connect to each of the corresponding sub-pixel circuit units.

[0066] For example, the first data line 111 may be a data line that provides a red image signal to the first sub-pixel circuit unit 121; the second data line 112 may be a data line that provides a green image signal to the second sub-pixel circuit unit 122; the third data line 113 may be a data line that provides a blue image signal to the third sub-pixel circuit unit 123; and the fourth data line 114 may be a data line that provides a white image signal to the fourth sub-pixel circuit unit 124. However, this disclosure is not limited thereto.

[0067] Furthermore, the first sub-pixel circuit unit 121 is connected to the first data line 111; the second sub-pixel circuit unit 122 is connected to the second data line 112; the third sub-pixel circuit unit 123 is connected to the third data line 113; and the fourth sub-pixel circuit unit 124 is connected to the fourth data line 114. However, this disclosure is not limited thereto.

[0068] The fourth sub-pixel circuit unit 124 can be implemented to easily achieve high display brightness (e.g., 800 nits or higher) in an electroluminescent display. Such a high-brightness electroluminescent display device has the advantage of supporting high dynamic range (HDR) functionality.

[0069] Each of the sub-pixel circuit units 121, 122, 123, and 124 of the pixel circuit unit 120 is configured to include at least a switching transistor, a driving transistor, and a capacitor. The switching transistor is configured to be switched on and off by a scan signal provided to the gate line 108.

[0070] When the switching transistor is switched to the on state, the image signal (i.e., data voltage) provided through data line 110 is supplied to the electrodes of the capacitor and the gate of the driving transistor via the switching transistor.

[0071] If an image signal is provided to the driving transistor, the amount of current supplied from the anode line 106 is adjusted by the driving transistor. That is, the resistance value of the driving transistor's channel changes according to the provided image signal. The brightness of the organic light-emitting diode (OLED) can be adjusted according to the adjusted amount of current flowing through the electroluminescent element (i.e., the organic light-emitting diode).

[0072] The switching transistor and the driving transistor can be configured as p-type semiconductor (pMOS), n-type semiconductor (nMOS), and / or c-type semiconductor (cMOS). Furthermore, depending on the configuration of the p-type and n-type semiconductors, the positions of the source and drain of the transistor can be interchanged.

[0073] In addition, the pixel circuit unit 120 may also include additional configurations such as a threshold voltage variation compensation circuit unit relative to the driving transistor, a light emission period control unit that can turn on / off the current supplied from the anode line 106 or control the light emission duty cycle of the current, and / or an initial voltage control unit that can discharge the data voltage charged in the capacitor.

[0074] In some embodiments, the fourth sub-pixel circuit unit 124 and the fourth data line 114 can be replaced by the second sub-pixel circuit unit 122 and the second data line 112, respectively. In the above configuration, a pentile structure with two second sub-pixel circuit units 122 can be implemented. Because green organic light-emitting diodes (OLEDs) are as bright as white OLEDs, this configuration is advantageous for achieving high brightness. Therefore, green OLEDs can replace white OLEDs.

[0075] In some embodiments, the semi-transparent (sub-transparent) common electrode of the organic light-emitting diode may be configured as: a transparent metal oxide electrode, an indium zinc oxide (IZO) electrode, an indium tin oxide (ITO) electrode, a magnesium-silver (Mg:Ag) electrode, a ytterbium (Yb) electrode, and / or alloys thereof.

[0076] In some embodiments, organic light-emitting diodes (OLEDs) may be replaced by quantum dot light-emitting diodes (QLEDs). For example, at least one organic light-emitting layer may be replaced by a quantum dot light-emitting layer, or at least one color filter may be replaced by a quantum dot color conversion filter, or at least one quantum dot layer may be an inorganic layer. However, this disclosure is not limited thereto.

[0077] In some implementations, pixel circuit unit 120 may not include fourth sub-pixel circuit unit 124. In this case, a transparent window can be used instead of fourth sub-pixel circuit unit 124 to implement a perspective display device.

[0078] Pixel circuit unit 120 may be, for example, a quad-type pixel circuit. Quad-type pixel circuit unit 120 may be an arrangement of four sub-pixels 121, 122, 123 and 124 in which two blocks are arranged along each of the horizontal and vertical axes (e.g., a sub-pixel circuit unit with a 2x2 matrix arrangement).

[0079] For example, the first sub-pixel circuit unit 121 may be located on the upper left side of the pixel circuit unit 120; the second sub-pixel circuit unit 122 may be located on the upper right side of the pixel circuit unit 120; the third sub-pixel circuit unit 123 may be located on the lower right side of the pixel circuit unit 120; and the fourth sub-pixel circuit unit 124 may be located on the lower left side of the pixel circuit unit 120. However, this disclosure is not limited to this, and the positions of the sub-pixel circuit units 121, 122, 123 and 124 may be rearranged as needed.

[0080] The channel area of ​​the driving transistor in each of the sub-pixel circuit units 121, 122, 123, and 124 may differ from the channel areas of the others depending on the required current. For example, the current required for the blue sub-pixel may be higher than that required for the green sub-pixel. Therefore, the channel area of ​​the driving transistor for the blue sub-pixel may be larger than the channel area of ​​the driving transistor for the green sub-pixel. However, this disclosure is not limited thereto, and the channel areas of the driving transistors may be the same for each other.

[0081] The capacitor area of ​​each of the sub-pixel circuit units 121, 122, 123, and 124 may differ from the capacitor areas of the others. For example, if the channel area of ​​the driving transistor of the blue sub-pixel circuit unit is larger than the channel area of ​​the driving transistor of the green sub-pixel circuit unit, then the capacitor area of ​​the blue sub-pixel circuit unit may be smaller than the capacitor area of ​​the green sub-pixel circuit unit.

[0082] In other words, a trade-off may exist such that if the area of ​​one element increases, the area of ​​another element decreases. Specifically, layout efficiency can be improved by designing the area of ​​each of the sub-pixel circuit units 121, 122, 123, and 124 to be substantially the same, and the current driving capability of the driving transistors and the capacitance of the capacitors can be adjusted by adjusting the areas of the driving transistors and the storage capacitors. However, this disclosure is not limited to this, and the areas of the storage capacitors may be designed to be identical to each other.

[0083] In one aspect of this disclosure, optimizing efficiency is important relative to the arrangement of components to achieve a high-resolution top-emitting electroluminescent display device. However, if the components are too densely packed, undesirable side effects can occur. Therefore, the interrelationships between each component should be considered when arranging them.

[0084] In view of the above, the gate line 108 is configured to intersect the data line 110 in the pixel region AA of the electroluminescent display device 100. Hereinafter, a first direction (e.g., the X-axis) is referred to as the extension direction of the gate line 108, and a second direction (e.g., the Y-axis) is referred to as the extension direction of the data line 110. However, this disclosure is not limited thereto, and the first and second directions are interchangeable.

[0085] In addition, for ease of description, such as Figure 1 As shown, the terms "set or arranged along a first direction" or "placed along a first direction" can be interpreted with reference to the X-axis, and the terms "set or arranged along a second direction" or "placed along a second direction" can be interpreted with reference to the Y-axis direction. However, this disclosure is not limited thereto.

[0086] The two different sub-pixel circuit units of the pixel circuit unit 120 are configured to be alternately arranged along a second direction. Furthermore, the two different sub-pixel circuit units of the pixel circuit unit 120 are configured to be alternately arranged along a first direction.

[0087] For example, the first sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124 may be alternately arranged along the second direction, and the second sub-pixel circuit unit 122 and the third sub-pixel circuit unit 123 may be alternately arranged along the second direction.

[0088] In another exemplary embodiment, the first sub-pixel circuit unit 121 and the second sub-pixel circuit unit 122 may be alternately arranged along the first direction, and the fourth sub-pixel circuit unit 124 and the third sub-pixel circuit unit 123 may be alternately arranged along the first direction.

[0089] In other words, sub-pixel circuit units 121 and 122 can be alternately arranged along the first direction in a repeating manner, following the sequence of first sub-pixel circuit unit 121, second sub-pixel circuit unit 122, first sub-pixel circuit unit 121 and second sub-pixel circuit unit 122; or sub-pixel circuit units 124 and 123 can be alternately arranged along the first direction in a repeating manner, following the sequence of fourth sub-pixel circuit unit 124, third sub-pixel circuit unit 123, fourth sub-pixel circuit unit 124 and third sub-pixel circuit unit 123.

[0090] The aforementioned quadruple-type pixel circuit unit 120 can be configured such that pixel circuit units 120 having a rectangular shape, etc., are arranged sequentially. Therefore, even if the pixel circuit units are arranged sequentially along the first and second directions, it is beneficial to minimize wasted area. In the following description, for ease of description, the pixel circuit unit 120 is considered as a quadruple-type pixel circuit unit, and the sub-pixel circuit units of the quadruple-type pixel circuit unit 120 are configured as a 2×2 structure. The optimized layout of multiple lines or multiple wirings within the pixel region AA is further described below.

[0091] Data lines 110 are disposed on both sides of sub-pixel circuit units that are alternately arranged along a second direction (e.g., the Y-axis), and data lines 111, 112, 113 and 114 are respectively connected to the corresponding sub-pixel circuit units 121, 122, 123 and 124.

[0092] In other words, sub-pixel circuit units, in which sub-pixel circuit units are alternately arranged along a second direction (e.g., first sub-pixel circuit unit 121 and fourth sub-pixel circuit unit 124 or second sub-pixel circuit unit 122 and third sub-pixel circuit unit 123), are alternately arranged along a second direction between a pair of data lines 110. That is, multiple mutually different sub-pixel circuit units are configured to alternately arrange along a second direction between a pair of mutually different data lines 100 (e.g., between first data line 111 and second data line 112).

[0093] Each subpixel circuit unit is connected to a corresponding data line, and different subpixel circuit units can be connected to different subpixels configured to display different colors. However, the configurations of different subpixel circuit units can be substantially the same.

[0094] If the area of ​​each sub-pixel circuit unit is the same, the wasted area can be minimized, and a high-resolution top-emitting electroluminescent display device can be realized, which is another beneficial effect of this disclosure.

[0095] For example, the first data line 111 extends along the second direction and is located on one side of the second sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124, which are alternately arranged along the second direction. Furthermore, the fourth data line 114 extends along the second direction and is located on the opposite side. Additionally, the third data line 113 extends along the second direction and is located on one side of the second sub-pixel circuit unit 122 and the third sub-pixel circuit unit 123, which are alternately arranged along the second direction. Furthermore, the second data line 112 extends along the second direction and is located on the opposite side.

[0096] Each first sub-pixel circuit unit 121 is configured to be connected to a corresponding first data line 111 disposed on one side; each fourth sub-pixel circuit unit 124 is configured to be connected to a corresponding fourth data line 114 disposed on the opposite side; each third sub-pixel circuit unit 123 is configured to be connected to a corresponding third data line 113 disposed on one side; and each second sub-pixel circuit unit 122 is configured to be connected to a corresponding second data line 112 disposed on the opposite side.

[0097] Alternating and distinct sub-pixel circuit units along the second direction and a pair of data lines on either side of the sub-pixel circuit units can be connected to form a zigzag pattern. In other words, along the second direction, the alternately arranged first sub-pixel circuit unit 121 can be connected to the first data line 111 on the left, and the alternately arranged fourth sub-pixel circuit unit 124 can be connected to the fourth data line 114 on the right.

[0098] In addition, a pair of different data lines are alternately arranged between sub-pixel circuit units that are alternately arranged along a first direction (e.g., the X-axis).

[0099] Some data lines can be configured as a pair, such that a fourth data line 114 and a third data line 113 are positioned between a first sub-pixel circuit unit 121 and a second sub-pixel circuit unit 122, or between a fourth sub-pixel circuit unit 124 and a third sub-pixel circuit unit 123, which are alternately arranged along a first direction. Furthermore, some data lines can be configured as another pair, such that a second data line 112 and a first data line 111 are positioned between a second sub-pixel circuit unit 122 and a first sub-pixel circuit unit 121, or between a third sub-pixel circuit unit 123 and a fourth sub-pixel circuit unit 124, which are alternately arranged along a first direction. Moreover, these data line pairs are alternately arranged in this repeating sequence.

[0100] The first data line group G1 can be defined as a pair of data lines configured to extend along a second direction, be spaced apart from each other along a first direction, and be disposed between the second sub-pixel circuit unit 122 and the first sub-pixel circuit unit 121, including a second data line 112 and a first data line 111.

[0101] The second data line group G2 can be defined as a pair of data lines configured to extend along a second direction, be spaced apart from each other along a first direction, and be disposed between the first sub-pixel circuit unit 121 and the second sub-pixel circuit unit 122.

[0102] The first data line group G1 and the second data line group G2 are configured to extend along a second direction and alternately arranged along a first direction. However, this disclosure is not limited thereto, and the corresponding groups G1 and G2 are described merely for ease of description. Therefore, a pair of data lines corresponding to the first data line group G1 and a pair of data lines corresponding to the second data line group G2 are interchangeable. That is, the first data line group G1 may be disposed on both sides of the circuit pixel unit 120, while the second data line group G2 may be disposed between sub-pixel circuit units 121 and 122 or between sub-pixel circuit units 123 and 124.

[0103] Furthermore, the data cable assembly may have a pair of data lines spaced apart from each other along a first direction and extending along a second direction. Therefore, a certain space along the second direction is provided between the pair of data lines. Moreover, since this certain space extends along the second direction, a power line extending along the second direction can be arranged within this space.

[0104] In addition, at least one signal line can be provided along the second direction between a pair of data lines in a data line group.

[0105] At least one function line capable of providing at least one additional function may be provided within the first or second data line group G1 or G2. The function line may be a reference voltage line, a touch sensing line, an external compensation line, a discharge line, and / or an initial line. The width of each line may be different, and at least one additional function line may be positioned between the pair of data lines by defining the distance between them.

[0106] If the power cord is positioned within the space provided between a pair of data lines, this configuration helps minimize interference from other components, as the space extends along a second direction. Furthermore, it facilitates easy wiring by adjusting the distance between the pairs of data lines in the data line group.

[0107] The gate line 108 is located at the center of the pixel circuit unit 120. In other words, the sub-pixel circuit units 121, 122, 123, and 124 of the pixel circuit unit 120 are arranged relative to the gate line 108 such that two sub-pixel circuit units are located on the upper side, and the other two sub-pixel circuit units are located on the lower side. Furthermore, the gate line 108 is connected to the sub-pixel circuit units 121, 122, 123, and 124 located on the upper and lower sides, respectively.

[0108] For example, two sub-pixel circuit units 121 and 122 are located on the upper side of the gate line 108, while the other two sub-pixel circuit units 123 and 124 are located on the lower side of the gate line 108.

[0109] Furthermore, no gate line 108 is provided between the pixel circuit units 120 arranged along the second direction.

[0110] For example, a gate line 108 is provided between the first sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124 of the pixel circuit unit 120. Furthermore, no gate line 108 is provided between the aforementioned pixel circuit unit 120 and another pixel circuit unit 120 located below (i.e., along the Y-axis direction) of the aforementioned pixel circuit unit 120.

[0111] In other words, the gate line 108 is disposed between the first sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124, or between the second sub-pixel circuit unit 122 and the third sub-pixel circuit unit 123, which are disposed along the second direction. However, the gate line 108 is not disposed between the fourth sub-pixel circuit unit 124 and the first sub-pixel circuit unit 121 of adjacent pixel units disposed along the second direction, or between the third sub-pixel circuit unit 123 and the second sub-pixel circuit unit 121 of adjacent pixel units disposed along the second direction.

[0112] In other words, the gate lines 108 are arranged sequentially along the second direction in a repeating manner, with one gate line placed between different sub-pixel circuit units, while the next gate line is not placed (i.e., skipped) between adjacent different sub-pixel circuit units. In other aspects, the gate lines 108 extend along the first direction, are arranged between sub-pixel circuit units, and intersect with the first data line group G1 and the second data line group G2.

[0113] The above describes an exemplary arrangement of the quadruple pixel circuit unit 120 with respect to the corresponding gating line 108 and data line 110.

[0114] According to the above configuration, the number of gate lines 108 can be reduced by half compared to conventional gate lines. Furthermore, if the number of gate lines 108 is reduced, the number of intersections between each of the data lines 121, 122, 123, and 124 and the gate line 108 can be reduced, thus reducing the parasitic capacitance between each of the data lines 121, 122, 123, and 124 and the gate line 108. In other words, the total area of ​​the intersections of a single data line and all the gate lines can be reduced, which helps to reduce the parasitic capacitance between the data line 110 and the gate line 108.

[0115] According to the above configuration, there is space where the gate line 108 is not provided. In other words, space is provided between the pixel circuit units 120 arranged along the second direction. Therefore, it is advantageous to place additional lines that can provide additional functions in this space. Therefore, it is advantageous to realize a high-resolution top-emitting electroluminescent display device.

[0116] According to the above configuration, a pair of data lines 110 can be provided between the pixel circuit units 120 arranged along the first direction. Furthermore, a certain space can be provided between this pair of data lines along the second direction. Therefore, it is advantageous to efficiently place power lines extending along the second direction within a certain space, and it is beneficial to realize a high-resolution top-emitting electroluminescent display device.

[0117] Based on the above configuration, even with the addition of the fourth data line 114 and the fourth sub-pixel circuit unit 124, the layout of each element can be optimized. Therefore, it is advantageous to easily realize a high-brightness electroluminescent display device.

[0118] To expand the capabilities of high-resolution electroluminescent display devices, the line resistance values ​​of the lines providing the cathode voltage ELVSS and anode voltage ELVDD should be sufficiently low, and the layout of these lines should be optimized. Therefore, common line 104 and anode line 106 are described below.

[0119] A common line 104, configured to provide a cathode voltage ELVSS, extends along a second direction and is disposed between a pair of data lines extending along the second direction. Furthermore, an anode line 106, configured to provide an anode voltage ELVDD, extends along the second direction and is disposed between another pair of data lines extending along the second direction. Additionally, the common line 104 and the anode line 106 are configured to alternate along a first direction. A pixel circuit unit 120 is disposed between the common line 104 and the anode line 106.

[0120] The linewidth of the common line 104 can be greater than the linewidth of the anode line 106. This is because when the cathode voltage ELVSS and the anode voltage ELVDD change equally, the brightness uniformity of the electroluminescent display device 100 is more sensitive to changes in the cathode voltage ELVSS. Therefore, the line resistance value of the common line 104 can be configured to be lower than the line resistance value of the anode line 106. Therefore, the width of the first data line group G1 (i.e., the space between a pair of data lines) can be wider than the width of the second data line group G2. However, this disclosure is not limited thereto.

[0121] Common line 104 and anode line 106 are set on gate line 108. (See reference...) Figure 1 The gate line 108 is covered by the common line 104 and the anode line 106 at the intersection of the gate line 108 with respect to the common line 104 or the anode line 106, because the gate line 108 is positioned below the common line 104 and the anode line 106.

[0122] In some implementations, the gate line 108 may be positioned above the common line 104 and the anode line 106.

[0123] The common line 104 and the anode line 106 may be disposed in the first data line group G1 and configured to be alternately disposed along a first direction. Alternatively, the common line 104 and the anode line 106 may be disposed in the second data line group G2 and configured to be alternately disposed along the first direction.

[0124] The gap between a pair of data lines 111 and 112, including the common line 104, in the first data line group G1 can be wider than the gap between a pair of data lines 111 and 112, including the anode line 106, in the first data line group G1. That is, the gap can be adjusted according to the line width of the line between the pair of data lines in the data line group.

[0125] The common line 104 may be disposed between the second data line 112 and the first data line 111 of the first data line group G1. In addition, the anode line 106 may be disposed between the second data line 112 and the first data line 111 of another first data line group G1 that is alternately disposed with the first data line group G1 including the common line 104.

[0126] According to the above configuration, the common line 104, the anode line 106, and the data line 110 extend along the second direction and do not intersect each other. Therefore, it is advantageous that the common line 104, the anode line 106, and the data line 110 can be formed of the same material.

[0127] Because the width of the gap can be adjusted according to the line width of the line set between a pair of data lines in the data line group, the above configuration helps to minimize any spatial loss in the pixel area AA.

[0128] In the above configuration, the common line 104 and the anode line 106 extend along the second direction and are respectively disposed on both sides of each pixel circuit unit 120. Therefore, the pixel circuit unit 120 can receive the cathode voltage ELVSS from the common line 104 and the anode voltage ELVDD from the anode line 106, respectively. This is beneficial for improving the uniformity of the potential difference between the cathode voltage ELVSS and the anode voltage of the multiple sub-pixel circuit units 120 within the pixel region AA.

[0129] The anode line 106 is configured to also include an anode line extension unit 107. The anode line extension unit 107 is configured to be disposed between mutually different sub-pixel circuit units that are alternately disposed along the second direction without the selection line 108 (i.e., the gap between pixel circuit units disposed along the second direction).

[0130] For example, the gate line 108 is disposed between the first sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124 disposed along the second direction, while the anode line extension unit 107 is disposed between the fourth sub-pixel circuit unit 124 and the first sub-pixel circuit unit 121 disposed along the second direction.

[0131] The extension unit 107 of the anode line can be made of a different material than that of the anode line 106. In other words, if the data line 110 and the anode line 106 are made of the same metal layer, the anode line 106 cannot extend over the data line 110 in the first direction. Therefore, different metal layers can be used at the intersection of the data line 110 and the anode line 106 to avoid any electrical connection (e.g., jumper) between the data line 110 and the anode line 106.

[0132] The anode line extension unit 107 and the anode line 106 are configured to be electrically connected at their intersection via a contact hole. Furthermore, the anode line extension unit 107 is configured to connect to adjacent sub-pixel circuit units of the pixel circuit units 120 on both sides of the anode line 106 (e.g., sub-pixel circuit units located above and below the anode line extension unit). The “X” shape within a rectangle shown can be referred to as a contact hole.

[0133] The anode line extension unit 107 extends to the pixel circuit units 120 on both sides (e.g., along the first direction) and is disposed between the common lines 104 on both sides of the corresponding anode line 106. That is, the anode line extension unit 107 does not overlap or cross the common lines 104. Therefore, it is advantageous to provide anode voltage and reduce the parasitic capacitance between the common lines 104 and the anode line extension unit 107.

[0134] The anode extension unit 107 and the gate line 108 may be made of the same metal layer. However, this disclosure is not limited thereto, and additional metal layers may be used to configure the anode extension unit 107.

[0135] In some embodiments, the anode wire extension unit 107 may extend along a first direction to intersect with the common wire 104. Furthermore, the anode wire extension unit 107 may extend further along the first direction to intersect with another anode wire, and connect at the intersection via a contact hole.

[0136] In some embodiments, the anode line 106 and the data line 110 are made of different metal layers. In this case, even if the data line 110 and the anode line 106 cross each other, they can be electrically insulated from each other. Therefore, the anode line 106 can be connected to the corresponding sub-pixel circuit units respectively using a direct patterning manufacturing method without the need for the anode line extension unit 107.

[0137] Therefore, the pixel circuit unit of pixel region AA can be made of four mutually different sub-pixel circuit units arranged in a quadruple configuration. The mutually different sub-pixel circuit units can be alternately arranged along a first direction, while the other sub-pixel circuit units can be alternately arranged along a second direction.

[0138] Data lines are respectively positioned on both sides of different sub-pixel circuit units that are alternately arranged along the second direction. Each sub-pixel circuit unit can be configured to connect to the corresponding data line.

[0139] Furthermore, the data lines on both sides of the mutually different sub-pixel circuit units that are alternately arranged along the second direction can be connected in a zigzag pattern.

[0140] A pair of distinct data line groups extending along a second direction can be arranged between sub-pixel circuit units that are alternately arranged along a first direction. The distinct data line groups can be alternately arranged along the first direction.

[0141] The extension units and gate lines of the anode lines extending along the first direction and spaced apart from each other along the second direction can be alternately arranged between different sub-pixel circuit units that are alternately arranged along the second direction.

[0142] Anode wires or common wires can be placed between different data lines within a data cable group.

[0143] The above configuration is beneficial to optimizing the separation distance between the common line 104 and the anode line 106. This is because the layout of the common line 104, anode line 106, gate line 108, data line and pixel circuit unit 120 relative to the pixel area AA makes the corresponding common line 104 and the corresponding anode line 106 located in the corresponding data line group G1, and the data line group G1 is respectively arranged on both sides of the quadruple pixel circuit unit.

[0144] Furthermore, since the common line 104 is located on one side of the pixel circuit unit 120, while the anode line 106 is located on the opposite side, it is advantageous to stably supply the cathode voltage ELVSS and the anode voltage ELVDD to the pixel circuit.

[0145] Figure 2 This is an example based on Figure 1 A schematic plan view of the configuration of pixel circuit units, pixel electrodes electrically connected to a common line, and common line contact units of an electroluminescent display device according to an exemplary embodiment shown.

[0146] Figure 2 Examples include pixel electrode 230, common line contact unit 250, and also... Figure 1 The various components are illustrated in the image.

[0147] According to an exemplary embodiment of this disclosure, the electroluminescent display device 100 is a top-emitting electroluminescent display device. Therefore, in such... Figure 1 The element shown has a coating layer and the pixel electrode 230 is patterned on the coating layer.

[0148] Pixel electrode 230 is configured to include a first sub-pixel electrode 231, a second sub-pixel electrode 232, a third sub-pixel electrode 233, and a fourth sub-pixel electrode 234. However, this disclosure is not limited thereto.

[0149] In some implementations, if the fourth sub-pixel circuit unit 124 is replaced with the second sub-pixel circuit unit 122, the fourth sub-pixel electrode 234 can be replaced with the second sub-pixel electrode 232. That is, a pixel arrangement structure with two green sub-pixels can be realized.

[0150] The pixel electrode 230 is configured to be connected to the pixel circuit unit 120 via a contact hole.

[0151] For example, the first sub-pixel electrode 231 is connected to the first sub-pixel circuit unit 121 through a contact hole, the second sub-pixel electrode 232 is connected to the second sub-pixel circuit unit 122 through a contact hole, the third sub-pixel electrode 233 is connected to the third sub-pixel circuit unit 123 through a contact hole, and the fourth sub-pixel electrode 234 is connected to the fourth sub-pixel circuit unit 124 through a contact hole.

[0152] Considering the aperture ratio, parasitic capacitance, and desired patterning efficiency of the pixel electrode, the pixel electrode 230 can be patterned into various shapes.

[0153] Each sub-pixel electrode 231, 232, 233, and 234 may overlap with at least a portion of two different sub-pixel circuit units disposed along the second direction. However, this disclosure is not limited thereto; the sub-pixel electrodes may overlap with at least a portion of two different sub-pixel circuit units disposed along the first direction.

[0154] For example, the first sub-pixel electrode 231 is configured to overlap with at least a portion of the first sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124; the second sub-pixel electrode 232 is configured to overlap with at least a portion of the second sub-pixel circuit unit 122 and the third sub-pixel circuit unit 123; the third sub-pixel electrode 233 is configured to overlap with at least a portion of the second sub-pixel circuit unit 122 and the third sub-pixel circuit unit 123; and the fourth sub-pixel electrode 234 is configured to overlap with at least a portion of the first sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124.

[0155] Depending on the arrangement of the pixel electrodes 230, each sub-pixel electrode 231, 232, 233, and 234 may have a shape in which the width along the second direction is wider than the width along the first direction (e.g., having a strip-shaped sub-pixel electrode). Furthermore, the layout of the strip-shaped sub-pixel electrodes is beneficial for optimizing the aperture ratio of the pixel electrodes. However, this disclosure is not limited thereto, and each sub-pixel electrode 231, 232, 233, and 234 of the pixel electrode 230 may have a shape in which the width along the first direction is wider than the width along the second direction.

[0156] The strip-shaped pixel electrode is not limited to a rectangular shape, and the shape of each sub-pixel electrode can be similar to a rectangle. Furthermore, the corners of the sub-pixel electrode can be curved instead of right angles; and protrusions can be formed at the contact hole areas used to connect the pixel circuit units. In other words, the contour of each sub-pixel electrode can be modified in various ways as needed.

[0157] At least one sub-pixel electrode among the pixel electrodes 230 may be configured to overlap with at least one line. However, this disclosure is not limited thereto.

[0158] For example, at least one of the sub-pixel electrodes 231, 232, 233 and 234 may be configured to overlap with at least one of the data lines 111, 112, 113 and 114.

[0159] Sub-pixel electrodes 231, 232, 233 and 234 can be configured to overlap with adjacent corresponding data lines 111, 112, 113 and 114, respectively.

[0160] For example, if each sub-pixel electrode 231, 232, 233 and 234 has a shape in which the width along the second direction is wider than the width along the first direction, then the first sub-pixel electrode 231 may be configured to overlap with the adjacent first data line 111; the second sub-pixel electrode 232 may be configured to overlap with the adjacent second data line 112; the third sub-pixel electrode 233 may be configured to overlap with the adjacent third data line 113; and the fourth sub-pixel electrode 234 may be configured to overlap with the adjacent fourth data line 114.

[0161] Furthermore, the first sub-pixel electrode 231 may be configured to overlap with the gate line 108; the second sub-pixel electrode 232 may be configured to overlap with the gate line 108; the third sub-pixel electrode 233 may be configured to overlap with the gate line 108; and the fourth sub-pixel electrode 234 may be configured to overlap with the gate line 108.

[0162] Furthermore, at least one sub-pixel electrode in the pixel electrode 230 may be configured to overlap with the common line 104, and at least one sub-pixel electrode in the pixel electrode 230 may be configured to overlap with the anode line 106.

[0163] The aforementioned overlapping layout of at least one sub-pixel electrode and at least one data line helps to increase the area of ​​the pixel electrode 230, thereby increasing the aperture ratio of the pixel electrode. Furthermore, if the sub-pixel electrode and the overlapping data line are electrically connected to each other (e.g., if the red sub-pixel electrode overlaps with the red data line), it helps to reduce parasitic capacitance effects.

[0164] A pair of sub-pixel electrodes overlaps with at least a portion of a pair of sub-pixel circuit units alternately arranged along a second direction, and the pair of sub-pixel electrodes overlaps with a gate line disposed between the pair of sub-pixel circuit units and extending along a first direction. However, this disclosure is not limited thereto.

[0165] For example, the first sub-pixel electrode 231 overlaps with at least a portion of the first sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124, the fourth sub-pixel electrode 234 overlaps with at least a portion of the first sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124, and the gate line 108 overlaps with the first sub-pixel electrode 231 and the fourth sub-pixel electrode 234. Furthermore, the gate line 108 is electrically connected to the first sub-pixel circuit unit 121 and the fourth sub-pixel circuit unit 124. Similarly, the second sub-pixel electrode 232 overlaps with at least a portion of the second sub-pixel circuit unit 122 and the third sub-pixel circuit unit 123, the third sub-pixel electrode 233 overlaps with at least a portion of the second sub-pixel circuit unit 122 and the third sub-pixel circuit unit 123, and the gate line 108 overlaps with the second sub-pixel electrode 232 and the third sub-pixel electrode 233. Furthermore, the gate line 108 is electrically connected to the second sub-pixel circuit unit 122 and the third sub-pixel circuit unit 123.

[0166] The overlapping layout of the pair of sub-pixel electrodes 231 and 234, the pair of sub-pixel circuit units 121 and 124, and the gate line 108 is beneficial to optimizing the layout of the pixel region AA, thereby realizing a high-resolution top-emitting electroluminescent display device.

[0167] The common line contact unit 250 is configured to include an exposed electroluminescent layer portion 251, a common line contact unit contact hole 252, and a connecting electrode 253. The common line contact unit 250 is configured to be disposed at a distance on the common line 104. The common line 104 and the common electrode 436 are configured to be electrically connected through the common line contact unit 250.

[0168] The exposed electroluminescent layer portion 251 (e.g., a region configured to interconnect a common electrode and an auxiliary common line) includes a structure with an inverted conical shape. Furthermore, a region without deposited electroluminescent layer is formed beneath the inverted conical structure. The cathode is electrically connected to the connection electrode 253 through the region without deposited electroluminescent layer. The connection electrode 253 is electrically connected to the common line 104 through the common line contact unit contact hole 252. (Refer to...) Figure 5 Detailed description of common line contact unit 250.

[0169] Figure 3 This is an example based on Figure 2 A schematic plan view of the black background and color filter on the pixel electrode of the electroluminescent display device 100 of the exemplary embodiment shown.

[0170] exist Figure 3 For ease of explanation, further examples are provided regarding the settings in the middle. Figure 2 The black background 370 and color filter 360 on the various components shown.

[0171] The color filter 360 can be configured to include a first color filter 361 as a red color filter, a second color filter 362 as a green color filter, a third color filter 363 as a blue color filter, and a fourth color filter 364 as a white color filter. However, this disclosure is not limited thereto.

[0172] The black background 370 is configured to surround the color filter 360. The black background 370 may be made of a material with light absorption properties, having an absorption rate of over 90% of visible light wavelengths.

[0173] A color filter 360 is positioned relative to the pixel electrode 230. Furthermore, the organic light-emitting diode disposed on the pixel electrode 230 is configured to emit red, green, blue, or white light.

[0174] For example, the first color filter 361 overlaps with the first sub-pixel electrode 231, the second color filter 362 overlaps with the second sub-pixel electrode 232, the third color filter 363 overlaps with the third sub-pixel electrode 233, and the fourth color filter 364 overlaps with the fourth sub-pixel electrode 234. The fourth color filter 364 may be transparent or constituted by a transparent layer having a transmittance of more than 90% for the visible light wavelength spectrum. However, this disclosure is not limited thereto, and the fourth color filter 364 may be configured as an opening that allows light to pass through without any transparent layer.

[0175] For example, the organic light-emitting diode on the first sub-pixel electrode 231 is configured to emit white light or red light; the organic light-emitting diode on the second sub-pixel electrode 232 is configured to emit white light or green light; the organic light-emitting diode on the third sub-pixel electrode 233 is configured to emit white light or blue light; and the organic light-emitting diode on the fourth sub-pixel electrode 234 is configured to emit white light.

[0176] In some exemplary embodiments, at least one color filter may be made of a quantum dot material that converts the wavelength of light incident on the quantum dot material to other wavelengths (e.g., converting blue light to green or red light).

[0177] The above-described configuration of the electroluminescent display device 100 selectively transmits, filters, and / or converts the wavelengths of organic light-emitting diodes (OLEDs) overlapping with the color filter. Furthermore, since the color filter can selectively absorb light entering from adjacent OLEDs, it is advantageous to reduce color mixing. Additionally, when the emission wavelength spectrum of the OLED is wider than the bandpass wavelength spectrum of the overlapping color filter, it is advantageous to improve color purity through the color filter (e.g., a narrower emission wavelength spectrum). Therefore, a wider color gamut can be achieved. Furthermore, the color filter 360 can absorb a portion of ambient light. Therefore, it is advantageous to improve ambient contrast. Furthermore, it is advantageous to filter out unwanted emission wavelengths from the various emission wavelength spectra of the OLED.

[0178] Figure 4 This is a schematic cross-sectional view illustrating the arrangement of a first sub-pixel circuit unit, a first sub-pixel electrode, and a first color filter in an electroluminescent display device according to an exemplary embodiment of the present disclosure.

[0179] Figure 4 Examples are shown as follows Figure 3 The cross-sectional view of a portion of the various components shown includes a first substrate 410, an insulating buffer layer 412, an interlayer insulating layer 414, a semiconductor layer 416, a gate insulating layer 418, a gate 420, a drain 422, a source 424, a capacitor electrode 425, a first insulating layer 426, a coated insulating layer 428, a dam 430, a first sub-pixel electrode 231, an electroluminescent layer 434, a common electrode 436, a second insulating layer 438, a transparent filler 440, a black base 370, a first color filter 361, and a second substrate 450. Unless otherwise specified, the embodiments of this disclosure described below will be based on... Figure 4 Configure it according to the structure shown.

[0180] The first substrate 410 protects and supports various components of the electroluminescent display device 100. The first substrate 410 can be made of various materials, such as glass or plastic. However, this disclosure is not limited thereto.

[0181] An insulating buffer layer 412 is located on the first substrate 410. The insulating buffer layer 412 may be configured to protect the semiconductor layer 416 from residual impurities and residual oxygen on the first substrate 410 and / or moisture and oxygen permeating through the first substrate 410. Furthermore, the insulating buffer layer 412 may be provided to enhance the surface adhesion of some elements disposed on the first substrate 410. The insulating buffer layer 412 may be made of an inorganic material. The thickness of each layer described below can be interpreted as having a tolerance range of ±10%.

[0182] For example, the insulating buffer layer 412 may be alternately stacked with silicon oxide (SiOx) and silicon nitride (SiNx), and the thickness of each layer may be approximately Alternatively, the insulating buffer layer 412 may be made of approximately It is made of a single layer of silicon oxide (SiOx) of a certain thickness. However, this disclosure is not limited thereto. In addition, if the electroluminescent display device 100 is a flexible display device, the insulating buffer layer 412 can be removed to improve flexibility.

[0183] Semiconductor layer 416 is located on insulating buffer layer 412. Semiconductor layer 416 can be used as a channel for thin-film transistors. If insulating buffer layer 412 is not implemented, semiconductor layer 416 can be located directly on first substrate 410. Semiconductor layer 416 can be made of oxide semiconductor (e.g., IGZO), polycrystalline silicon semiconductor (e.g., LTPS), and / or amorphous silicon semiconductor (e.g., a-Si). The thickness of semiconductor layer 416 can be approximately However, this disclosure is not limited thereto. The semiconductor layer 416 may be implemented as a switching element that performs an on / off function and / or a current control element for precisely controlling the amount of current. However, this disclosure is not limited thereto.

[0184] A gate insulating layer 418 may be interposed between the semiconductor layer 416 and the gate 420. The gate insulating layer 418 may be configured to insulate the semiconductor layer 416 and the gate 420. The thickness of the gate insulating layer 418 may be a suitable thickness for switching the semiconductor layer 416 from a conductive state to a non-conductive state or for precisely controlling the amount of current flowing through the semiconductor layer 416. For example, the gate insulating layer 418 may be an inorganic layer, the inorganic material being selected from silicon oxide (SiOx) or silicon nitride (SiNx), and the thickness of the inorganic layer may be approximately... However, this disclosure is not limited thereto. For example, the thickness of the gate insulating layer 418 may be relatively thinner than the thickness of the insulating buffer layer 412 to allow control of the semiconductor layer 416. However, this disclosure is not limited thereto.

[0185] Gate 420 is located on gate insulating layer 418. Gate 420 may be the gate of a thin-film transistor. The resistance value of semiconductor layer 416 may vary depending on the voltage level applied to gate 420. Gate 420 may be made of a metallic material and may be electrically connected to capacitor electrodes. Gate 420 may be formed of the same metal as gate line 108, and gate 420 may be part of gate line 108.

[0186] For example, the gate 420 may be made of copper. Copper has excellent electrical properties due to its very low resistivity. However, this disclosure is not limited thereto.

[0187] Alternatively, the gate 420 may be a multilayer structure, such that a molybdenum alloy, such as molybdenum-titanium (MoTi), is disposed on the copper. Molybdenum-titanium increases interfacial adhesion strength. However, this disclosure is not limited thereto.

[0188] Gate 420 may be on the upper side having approximately A copper layer of approximately [thickness] and on the underside [area] The present disclosure is a stacked structure of molybdenum-titanium layers of varying thicknesses. However, this disclosure is not limited thereto.

[0189] The capacitor electrode 425 may be made of the same material as the gate 420 and is configured to be electrically connected to the gate 420. Capacitance can be generated by overlapping or facing the capacitor electrode 425 and the source electrode 424, which are electrically insulated from each other via the interlayer insulating layer 414. As the overlap area of ​​the capacitor electrode 425 and the source electrode 424 increases, the capacitance can also be increased accordingly.

[0190] For example, a portion of the source 424 overlapping with the capacitor electrode 425 may be an extension of the source 424. Furthermore, a portion of the capacitor electrode 425 overlapping with the source 424 may be an extension of the gate 420. However, this disclosure is not limited thereto.

[0191] In some exemplary embodiments, a portion of the capacitor electrode 425 may be made of the same material as the semiconductor layer 416. Furthermore, a portion of the capacitor electrode 425 may be made of the same material as the gate 420, while another portion of the capacitor electrode 425 may be made of the same material as the semiconductor layer 416.

[0192] In other exemplary embodiments, an extension of the gate 420 overlaps with a capacitor electrode 425 made of the same material as the semiconductor layer 416, and a contact hole configured to electrically connect the capacitor electrode 425 and the gate 420 is formed in a gate insulating layer 418 between the capacitor electrode 425 and the gate 420.

[0193] If the capacitor electrode 425 is made of the same material as the semiconductor layer 416, the material is preferably treated to have conductive properties to increase capacitance.

[0194] For example, if the materials of capacitor electrode 425 and semiconductor layer 416 are oxides, a plasma processing process can be used to process capacitor electrode 425. Alternatively, if semiconductor layer 416 is low-temperature polycrystalline silicon (LTPS), a p-type dopant doping process can be used to process capacitor electrode 425.

[0195] An interlayer insulating layer 414 is located on the gate 420 and the capacitor electrode 425. The interlayer insulating layer 414 may be formed over the entire surface of the first substrate 410 and has contact holes configured to expose a portion of the semiconductor layer 416. For example, the interlayer insulating layer 414 may be configured as an inorganic layer and may be composed of a substrate having approximately [missing information - likely a number of contact holes]. It is made of silicon oxide (SiOx) of a certain thickness. However, this disclosure is not limited thereto.

[0196] The interlayer insulating layer 414 may be relatively thicker than the gate insulating layer 418 to reduce the parasitic capacitance between the gate 420, the second data line 112 and the source 424 on the interlayer insulating layer 414. However, this disclosure is not limited thereto.

[0197] The thickness of the interlayer insulating layer 414 can be configured to be approximately three times thicker than the gate insulating layer 418. However, this disclosure is not limited thereto.

[0198] Drain 422 and source 424 are located on interlayer insulating layer 414. However, this disclosure is not limited thereto. Alternatively, drain 422 and source 424 may be the source or drain of a thin-film transistor, respectively.

[0199] Drain 422 and source 424 are electrically connected to semiconductor layer 416 through contact holes disposed in interlayer insulating layer 414. Drain 422 and source 424 may be made of metallic material. For example, drain 422 and source 424 may be made of copper. However, this disclosure is not limited thereto.

[0200] The drain 422 and source 424 can also be a multilayer structure with a molybdenum-titanium layer disposed beneath the copper layer. However, this disclosure is not limited thereto.

[0201] The drain 422 and source 424 can be a multilayer structure, so that the copper layer has approximately The thickness and the molybdenum-titanium layer have approximately The thickness. However, this disclosure is not limited thereto.

[0202] Alternatively, the drain 422 and source 424 may be a multilayer structure, comprising components that can be made of approximately The upper layer is made of ITO with a thickness of approximately The middle layer is made of copper with a thickness of approximately The lower layer is made of a molybdenum-titanium alloy of a certain thickness. However, this disclosure is not limited thereto.

[0203] Drain 422 and source 424 can transmit image signals or anode voltage. Therefore, the line resistance of drain 422 and source 424 can be lower than the line resistance of gate 420. Therefore, the thickness of drain 422 and source 424 can be relatively thicker than the thickness of gate 420. Furthermore, the thickness of drain 422 and source 424 can be the same. However, this disclosure is not limited thereto.

[0204] exist Figure 4 In this description, for ease of description, N-type thin-film transistors are illustrated as coplanar structures, but this disclosure is not limited thereto, and thin-film transistors can be implemented as inverted staggered structures.

[0205] A first insulating layer 426 may be disposed on the drain 422 and the source 424. The first insulating layer may be configured to protect the thin-film transistor. Contact holes may be formed in the first insulating layer 426 to connect the first sub-pixel electrode 231 and the thin-film transistor.

[0206] The first insulating layer 426 may be made of an inorganic layer. For example, the first insulating layer 426 may be made of a material having approximately It is made of silicon oxide (SiOx) of a certain thickness. However, this disclosure is not limited thereto.

[0207] In some implementations, the first insulating layer 426 may be omitted.

[0208] An insulating layer 428 may be applied over the first insulating layer 426. The insulating layer 428 is an organic insulating layer configured to planarize the upper portion of the thin-film transistor. Contact holes may be formed in the insulating layer 428 to connect the first sub-pixel electrode 231 and the thin-film transistor. Furthermore, this contact hole may be aligned with a contact hole in the first insulating layer 426.

[0209] For example, the insulating layer 428 can be formed from a negative coating material and can have a thickness of about 2 μm. However, this disclosure is not limited thereto.

[0210] The organic light-emitting diode is located on the insulating layer 428. The organic light-emitting diode includes a first sub-pixel electrode 231, an electroluminescent layer 434, and a common electrode 436.

[0211] The first sub-pixel electrode 231 provides holes to the electroluminescent layer 434 and is connected to the source 424 of the thin-film transistor. That is, the first sub-pixel electrode 231 is configured to serve as an anode.

[0212] According to an exemplary embodiment of this disclosure, the electroluminescent display device 100 is a top-emitting electroluminescent display device. Therefore, the first sub-pixel electrode 231 may include a conductive reflective layer having high visible wavelength reflectivity or an additional reflective layer disposed below the first sub-pixel electrode 231.

[0213] For example, the reflective layer can be made of materials with mirror-like properties such as silver (Ag), silver alloys (Ag alloys), APC (Ag-Pd-Cu) alloys, and molybdenum-titanium (MoTi) alloys. Furthermore, the thickness of the reflective layer can be approximately... However, this disclosure is not limited to this.

[0214] In addition, a thickness of approximately [thickness missing] can be formed on the reflective layer using materials such as indium tin oxide (ITO) or indium zinc oxide (IZO). Transparent conductive oxide materials. However, this disclosure is not limited thereto.

[0215] The dam 430 is configured to cover the boundary of the first sub-pixel electrode 231 on the coated insulating layer 428. The dam 430 may be made of an organic insulating layer.

[0216] For example, the dam 430 may be made of polyimide and may have a thickness of about 1.8 μm. However, this disclosure is not limited thereto.

[0217] The electroluminescent layer 434 may be made of an organic light-emitting material for emitting white light and may include at least one organic light-emitting material layer. A specific emission spectrum may be configured according to the configuration of the electroluminescent layer 434.

[0218] For example, the electroluminescent layer 434 may emit red, green, blue, and / or white light. Furthermore, the emitted light may be selectively filtered according to the first color filter 361. However, this disclosure is not limited thereto.

[0219] The electroluminescent layer 434 is configured to include at least one common layer. The common layer can be a layer commonly disposed on each sub-pixel. For example, the common layer can be a hole transport layer (HTL), an electroluminescent layer (ELL), an electron injection layer (EIL), a hole injection layer (HIL), etc. However, this disclosure is not limited thereto. The common layer can be fabricated using an aperture mask process, thereby covering the pixel area. However, according to the above configuration, the electroluminescent layer 434 can have electrically insulating properties. Therefore, if the electroluminescent layer 434 is interposed between the common electrode 436 and the common line 104, the common electrode 436 and the common line 104 are mutually insulated. Therefore, the electroluminescent layer 434 is removed at the connection region between the common electrode 436 and the common line 104.

[0220] The common electrode 436 is located on the electroluminescent layer 434. The common electrode 436 is the layer that provides electrons. Since the electroluminescent display device 100 is a top-emitting electroluminescent display device, the common electrode 436 can be made of a very thin metallic material or a transparent conductive oxide material with a low work function value. However, this disclosure is not limited thereto.

[0221] For example, the common electrode 436 can be made of approximately It is made of indium zinc oxide (IZO) of a certain thickness. However, this disclosure is not limited thereto. The common electrode 436 is configured to be connected to the common line contact unit 250.

[0222] The second insulating layer 438 is located on the common electrode 436. The second insulating layer 438 protects the electroluminescent layer 434 from moisture, oxygen and / or hydrogen. The second insulating layer 438 may be made of inorganic materials.

[0223] For example, the second insulating layer 438 may be made of silicon nitride oxide (SiONx), silicon oxide (SiOx), and / or silicon nitride (SiNx). Preferably, the second insulating layer 438 may be made of silicon nitride oxide (SiONx) having a thickness of about 1 μm. However, this disclosure is not limited thereto.

[0224] A transparent filler 440 is located on the second insulating layer 438. The transparent filler 440 can flatten any steps formed by the patterned embankment 430, the coated insulating layer 428, and the first insulating layer 426. The transparent filler 440 can be made of a transparent organic material.

[0225] For example, the transparent filler 440 can be a polymer resin, acrylic resin, or epoxy resin. However, this disclosure is not limited thereto.

[0226] In addition, the second insulating layer 438 between the common electrode 436 and the transparent filler 440 can be removed.

[0227] The first color filter 361 is located on the transparent filler 440 and corresponds to the first sub-pixel electrode 231.

[0228] The black background 370 is configured to surround the first color filter 361.

[0229] The second substrate 450 protects and supports various components of the electroluminescent display device 100. The second substrate 450 can be made of various materials. For example, it can be made of glass or plastic, but this disclosure is not limited thereto. The second substrate 450 is configured to support at least the first color filter 361 and the black background 370.

[0230] Figure 5 This is a schematic cross-sectional view illustrating the common line contact unit of an electroluminescent display device according to an exemplary embodiment of the present disclosure. Figure 5 and Figure 2 The cross-section line A-A' corresponds to this. For the sake of brevity and convenience, its redundant features will be omitted.

[0231] exist Figure 2 A common line contact unit 250, configured to connect the common line 104 and the common electrode 436, is provided at the cross-sectional line A-A'.

[0232] The common line contact unit 250 is configured to include an exposed electroluminescent layer portion 251, a common line contact unit contact hole 252, and a connection electrode 253.

[0233] The exposed electroluminescent layer portion 251 includes an inverted cone structure 542 located on the embankment 430. That is, the embankment 430 is configured to serve as a support for the inverted cone structure 542. The area of ​​the upper surface of the embankment 430 serving as a support may be larger than the area of ​​the bottom surface of the inverted cone structure 542. The inverted cone structure 542 may have an upper surface area larger than the lower surface area, or an angle less than 90° between the side surface and the upper surface of the inverted cone structure 542. Furthermore, another embankment 430 disposed on either side of the embankment 430 serves as a support for the inverted cone structure 542 and forms an opening therebetween in the absence of the embankment 430.

[0234] Furthermore, a region configured to prevent the deposition of the electroluminescent layer 434 is formed beneath the inverted cone structure 542. That is, the step coverage capability of the electroluminescent layer 434 is not superior to that of the common electrode 436. Therefore, the electroluminescent layer 434 may not be deposited beneath the inverted cone structure 542. On the other hand, since the step coverage capability of the common electrode 436 is superior to that of the electroluminescent layer 434, the common electrode 436 may be deposited beneath the inverted cone structure 542. Therefore, the common electrode 436 is electrically connected to the connecting electrode 253 through the region where the electroluminescent layer 434 is not deposited due to the inverted cone structure 542.

[0235] The connecting electrode 253 is disposed below the inverted conical structure 542 (for example, below the embankment 430, which serves as a support below the inverted conical structure 542). Specifically, the connecting electrode 253 is disposed below both the inverted conical structure 542 and the embankment 430. Furthermore, the connecting electrode 253 extends to the common line contact unit contact hole 252. The connecting electrode 253 may be made of the same metal material as the pixel electrode 230.

[0236] The connecting electrode 253 is electrically connected to the common line 104 through the contact hole 252 of the common line contact unit.

[0237] The common line contact unit contact hole 252 is spaced apart from the exposed electroluminescent layer portion 251. The common line contact unit contact hole 252 may be an area in which a portion of the common line 104 is exposed by patterning or removing the coated insulating layer 428 and the first insulating layer 426.

[0238] The exposed electroluminescent layer portion 251 and the common line contact unit contact hole 252 can be arranged along the extension direction of the common line 104 and spaced apart from each other.

[0239] For example, the exposed electroluminescent layer portion 251 and the common line contact unit contact hole 252 may overlap with the common line 104 and may be disposed along the second direction in the region where the connecting electrode 253 is connected.

[0240] According to the exemplary embodiment described above, the common line contact unit 250, the common line 104, and the common electrode 436 are electrically connected to each other. Specifically, the resistance value of the common line 104 is lower than that of the common electrode 436. Therefore, this is beneficial for improving the brightness uniformity of the electroluminescent display device. Furthermore, if the connecting electrode 253 is made of the same material as the pixel electrode 230, the connecting electrode 253 can be easily formed by modifying the pattern of the patterning mask of the pixel electrode 230. Therefore, it is advantageous to form the pixel electrode 230 and the connecting electrode 253 simultaneously without any additional manufacturing processes.

[0241] Figure 6This is a schematic plan view illustrating an electroluminescent display device 600 according to another exemplary embodiment of the present disclosure.

[0242] Compared to the electroluminescent display device 100, the electroluminescent display device 600 is characterized in that the common line contact unit 250 is replaced by a common line soldering unit 650. Furthermore, redundant features will be omitted for brevity and ease of description.

[0243] The common line welding unit 650 electrically connects the common line 104 and the common electrode 436 and is configured to electrically connect the common line 104 and the common electrode 436 via a laser irradiation process.

[0244] Laser irradiation processes can include laser welding, laser contact, and thermal welding.

[0245] Figure 7 This is a schematic cross-sectional view illustrating the common line welding unit of an electroluminescent display device 600.

[0246] Figure 7 Corresponding to Figure 6 The cross-section line A-A'. In Figure 7 For the sake of brevity and ease of description, the common line welding unit 650 and... Figure 6 The various other components shown.

[0247] The common line welding unit 650 can be a contact hole configured by patterning the insulating layer between the common electrode 436 and the common line 104.

[0248] The first insulation layer 426, the coated insulation layer 428, and the dam 430 on the common line welding unit 650 can be removed by a patterning process.

[0249] Therefore, the electroluminescent layer 434 can be disposed separately between the common line bonding unit 650 and the common electrode 436. Furthermore, if a laser is incident on the lower surface of the first substrate 410, the laser passes through layers with transparent properties, such as the first substrate 410, the insulating buffer layer 412, and the interlayer insulating layer 414. Conversely, because the laser cannot pass through the common line 104 made of metallic material, the laser generates heat at the common line 104. Therefore, the electroluminescent layer 434, which may be made of organic material, is burned off due to the heat. Thus, the electroluminescent layer 434 can be removed by laser. Furthermore, the common electrode 436 can be melted due to its metallic properties. Therefore, the melted common electrode 436 and the common line bonding unit 650 can be connected or welded together in the area where the electroluminescent layer 434 has been removed.

[0250] The laser welding process can be performed after the common electrode 436 has been deposited. In this case, the laser irradiation direction can start from the upper side of the common electrode 436 or the lower side of the common line.

[0251] In some embodiments, laser welding can be performed after the first substrate 410 and the second substrate 450 have been bonded together. In this case, the common line welding unit 650 can be shielded by the black background 370. As a result, the laser can be incident on the underside of the common line 104.

[0252] In the above embodiment, the common line bonding unit 650, the common line 104, and the common electrode 436 are electrically connected. Furthermore, if the common line bonding unit 650 can be made of the same material as the pixel electrode 230, it can be easily formed by modifying the pattern of the pattern mask of the pixel electrode 230. Therefore, it is advantageous to form the common line bonding unit 650 and the pixel electrode 230 simultaneously without requiring additional manufacturing processes.

[0253] Furthermore, the second insulating layer 438 and / or the transparent filler 440 can support the common electrode 436 during the laser welding process. In particular, the welded portion subjected to the high-temperature heat energy of laser welding can have a random shape. In this case, if the second insulating layer 438 and / or the transparent filler 440 fill the space above the common electrode 436, the degree of deformation of the common electrode 436 can be reduced when it melts. Because the transparent filler 440 absorbs some of the heat energy, this helps to reduce the heat energy transferred to the electroluminescent layer 434.

[0254] Figure 8 An electroluminescent display device 800 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0255] Figure 8 This is a schematic plan view illustrating an electroluminescent display device 800 according to yet another exemplary embodiment of the present disclosure.

[0256] Compared to the electroluminescent display device 600, the electroluminescent display device 800 is characterized in that the common line bonding unit 850 further includes a connecting electrode 853. For the sake of brevity and convenience, its redundant features have been omitted.

[0257] Figure 9 This is a schematic cross-sectional view illustrating the common line welding unit of an electroluminescent display device 800. Figure 9 Corresponding to Figure 8 The cross-section line A-A' is shown. For the sake of brevity and convenience, its redundant features have been omitted.

[0258] The connecting electrode 853 may be made of the same material as the pixel electrode 230. In addition, the connecting electrode 853 is disposed between the common electrode 436 and the common line 104, thereby electrically connecting the common electrode 436 and the common line 104.

[0259] A portion of the connecting electrode 853 may be disposed on the common line 104, and another portion of the connecting electrode 853 may extend along one side of the patterned first insulating layer 426 and the patterned coated insulating layer 428. Alternatively, yet another portion of the connecting electrode 853 may extend to a portion of the interface between the coated insulating layer 428 and the embankment 430. However, this disclosure is not limited thereto, and the connecting electrode 853 may be disposed only on the common line 104.

[0260] The electroluminescent layer 434 can be disposed separately between the connecting electrode 853 and the common electrode 436. Furthermore, if a laser is incident on the lower surface of the first substrate 410, the laser passes through layers with transparent properties, such as the first substrate 410, the insulating buffer layer 412, and the interlayer insulating layer 414. Alternatively, if the laser cannot penetrate the common line 104 made of a metallic material, heat will be generated. Therefore, the electroluminescent layer 434, which may be made of an organic material, can be burned off. Thus, the electroluminescent layer 434 can be removed by laser. Furthermore, the common electrode 436 melts due to its metallic properties. Therefore, the molten common electrode 436 and the connecting electrode 853 can be connected or welded together at the area where the electroluminescent layer 434 has been removed.

[0261] In the above configuration, the heat generated at the common line 104 can be transferred to the connecting electrode 853. Therefore, the degree of heat dissipation through the common line 104 can be reduced. Thus, at least a portion of the heat energy is stored in the connecting electrode 853. Therefore, during the laser welding process in the welding area, the welding success rate can be increased and the temperature in the surrounding area of ​​the welding area can be reduced, which are beneficial effects of this disclosure.

[0262] Figures 10 to 12 An electroluminescent display device 1000 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0263] Figure 10 This is a schematic plan view illustrating an electroluminescent display device 1000.

[0264] Compared to electroluminescent display devices 100 and 600, electroluminescent display device 1000 is characterized by further including an auxiliary common line 1010 and an auxiliary anode line 1016. For the sake of brevity and convenience, these redundant features have been omitted.

[0265] Auxiliary common line 1010 and common line 104 may be configured to overlap each other and extend in the same direction (second direction). At least one insulating layer is configured to be inserted between auxiliary common line 1010 and common line 104. Furthermore, auxiliary common line 1010 and common line 104 are configured to be electrically connected through a plurality of auxiliary common line contact holes 1020.

[0266] The auxiliary common line 1010 and the anode line 1006 may be made of the same metallic material and disposed below the rear surface of the gate line 108. Furthermore, the auxiliary anode line 1016 and the common line 104 may be made of the same metallic material. However, this disclosure is not limited thereto.

[0267] The auxiliary common line 1010 can be configured not to overlap with at least two elements.

[0268] As a first example, the auxiliary common line 1010 may not overlap with the gate line 108. In the area where the gate line 108 is set, the auxiliary common lines 1010 after the drawing are separated from each other by the gate line 108.

[0269] As a second example, the auxiliary common line 1010 can be configured not to overlap with the common line welding unit 650. In the area where the common line welding unit 650 is provided, the patterned auxiliary common lines 1010 are separated from each other by the common line welding unit 650.

[0270] Even though the auxiliary common line 1010 is present, the above configuration helps to minimize the increase in parasitic capacitance because the auxiliary common line 1010 does not overlap with the gate line 108. Furthermore, even though the auxiliary common line 1010 is provided, it helps to expose the laser from below the first substrate 410 to the common line bonding unit 650 because the auxiliary common line 1010 does not interrupt laser irradiation.

[0271] The auxiliary anode wire 1016 and the anode wire 1006 may be configured to overlap each other and extend in the same direction (second direction). At least one insulating layer is configured to be inserted between the auxiliary anode wire 1016 and the anode wire 1006. Furthermore, the auxiliary anode wire 1016 and the anode wire 1006 are configured to be electrically connected through a plurality of auxiliary common wire contact holes 1020.

[0272] Furthermore, the auxiliary anode line 1016 can be configured not to overlap with the gate line 108. In areas where the gate line 108 is provided, the patterned auxiliary anode lines 1016 can be separated from each other by the gate line 108.

[0273] Even though the auxiliary anode line 1016 exists, the above configuration helps to minimize the increment of parasitic capacitance because the auxiliary anode line 1016 does not overlap with the gate line 108. In particular, since the auxiliary common line 1010 and the auxiliary anode line 1016 are separated by the gate line 108, the parasitic capacitance relative to the gate line 108 can be minimized.

[0274] In the above configuration, the common line 104 and the anode line 1006 can be made of different metallic materials. This is advantageous because when the cathode voltage ELVSS and anode voltage ELVSS are supplied from the peripheral area surrounding the pixel area AA, the design of the cathode voltage supply unit and the anode voltage supply unit in the peripheral area becomes easier, since the common line 104 and the anode line 1006 can be electrically insulated from each other.

[0275] Figure 11 This is a schematic cross-sectional view illustrating the arrangement of the first sub-pixel circuit unit, the first sub-pixel electrode, and the first color filter in an electroluminescent display device 1000.

[0276] Compared to the pixel circuit units of electroluminescent display devices 100 and 600, the pixel circuit unit of electroluminescent display device 1000 is characterized in that it also includes a light-shielding capacitor electrode 1126 made of the same metal material as the auxiliary common line 1010. For the sake of brevity and convenience, its redundant features are omitted.

[0277] A light-shielding capacitor electrode 1126 is configured to be electrically connected to the source electrode 424, and a capacitor electrode 1125 electrically connected to the gate electrode 420 is configured to overlap with the light-shielding capacitor electrode 1126 and the source electrode 424. That is, a first capacitance is generated at the overlap region between the capacitor electrode 1125 and the light-shielding capacitor electrode 1126, and a second capacitance is generated at the overlap region between the capacitor electrode 1125 and the source electrode 424. Furthermore, the light-shielding capacitor electrode 1126 may extend to and / or overlap with the semiconductor layer 416 to protect the semiconductor layer 416 from ambient light. Additionally, a portion of the light-shielding capacitor electrode 1126 may further extend around the boundary of the semiconductor layer 416.

[0278] The light-shielding capacitor electrode 1126 and the source electrode 424 can be electrically connected by forming contact holes in the interlayer insulating layer 414 and the insulating buffer layer 412 disposed between the light-shielding capacitor electrode 1126 and the source electrode 424.

[0279] The light-shielding capacitor electrode 1126 may be included on the upper side having approximately A copper layer of approximately [thickness] and on the underside [area] The stacked structure includes a molybdenum-titanium alloy layer of a certain thickness. However, this disclosure is not limited thereto. For example, the light-shielding capacitor electrode 1126 and the source electrode 424 may have the same thickness.

[0280] According to yet another exemplary embodiment of this disclosure, the capacitor electrode 1125 may be made of a semiconductor layer 416 having conductive properties, and as... Figure 11The capacitor electrode 1125 is shown connected to the gate 420. However, this disclosure is not limited thereto, and the capacitor electrode 1125 may be configured as the capacitor electrode 425 of another exemplary embodiment of this disclosure.

[0281] According to the above configuration, the light-shielding capacitor electrode 1126 can generate dual capacitance. Accordingly, the capacitance can be increased within a relatively small area. As a result, it is advantageous to realize a high-resolution top-emitting electroluminescent display device, and if the stacking structure and thickness of the source 424 are the same as those of the light-shielding capacitor electrode 1126, and the source 424 can be manufactured using the same manufacturing process formulation, it is advantageous to improve the efficiency of the manufacturing process. Furthermore, if the capacitor electrode 1125 is made of the same material as the gate 420 and / or the semiconductor layer 416, it is advantageous to realize a high-resolution top-emitting electroluminescent display device because the layout of the pixel circuit units can be optimized.

[0282] Figure 12 This is a schematic cross-sectional view illustrating the structure of the auxiliary common line adjacent to the common line welding unit of the electroluminescent display device 1000.

[0283] exist Figure 12 For ease of explanation, this includes... Figure 10 The example also includes the auxiliary common line 1010, the common line welding unit 650, and various components. Figure 12 Corresponding to Figure 10 The cross-section line A-A'. For simplicity and ease of description, its redundant features will be omitted.

[0284] The auxiliary common line 1010 can be configured to be disposed around the common line welding unit 650. An insulating buffer layer 412 and an interlayer insulating layer 414 are inserted between the common line 104 and the auxiliary common line 1010. Furthermore, the common line 104 and the auxiliary common line 1010 are configured to be electrically connected through a plurality of auxiliary common line contact holes 1020 passing through the insulating buffer layer 412 and the interlayer insulating layer 414. Additionally, the auxiliary common line 1010 and the light-shielding capacitor electrode 1126 can be made of the same metallic material. However, this disclosure is not limited thereto.

[0285] For example, auxiliary common line 1010 may include approximately A copper layer of approximately [thickness] and having [a certain thickness] The disclosure is a multi-layered structure including a molybdenum-titanium alloy layer of a certain thickness. However, this disclosure is not limited thereto.

[0286] The auxiliary common line 1010 can be configured not to overlap with the common line welding unit 650. That is, the auxiliary common lines 1010 can be separated from each other through the common line welding unit 650.

[0287] According to the above configuration, the auxiliary common line 1010 does not interrupt the laser incident on the common line welding unit 650. Furthermore, since the auxiliary common line 1010 is electrically connected to the common line 104, the line resistance value can be reduced. Correspondingly, the linewidth of the common line can be reduced. These features are advantageous for realizing high-resolution top-emitting electroluminescent display devices.

[0288] In some embodiments, a portion of the auxiliary common line 1010 may directly contact the common line welding unit. In this case, the interlayer insulation layer 414 and the insulation buffer layer 412 disposed below the common line welding unit 650 can be removed, and a portion of the auxiliary common line 1010 can be patterned to directly contact the common line welding unit 650. The above configuration enables... Figure 9 The effect is similar to that of the connecting electrodes shown. That is, the heat energy generated by the laser can be stored in a portion of the auxiliary common line 1010 disposed below the common line welding unit 650. Therefore, during the laser welding process, a relatively large amount of heat energy can be concentrated in the laser welding area. Consequently, it is advantageous to improve the welding success rate and reduce the temperature around the welding area.

[0289] Figure 13 and Figure 14 An electroluminescent display device 1300 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0290] Figure 13 This is a schematic plan view illustrating an electroluminescent display device 1300.

[0291] Compared to the electroluminescent display device 1000, the electroluminescent display device 1300 is characterized in that the common line welding unit 650 is replaced by the common line contact unit 250. For the sake of brevity and convenience, its redundant features have been omitted.

[0292] The auxiliary common line 1310 is configured not to overlap with the strobe line 108, but to overlap with the common line contact unit 250.

[0293] Figure 14 This is a schematic cross-sectional view illustrating the structure of the auxiliary common line adjacent to the common line contact unit of the electroluminescent display device 1300. Figure 14 Corresponding to Figure 13 The cross-section line A-A' is shown. For the sake of brevity and convenience, its redundant features have been omitted.

[0294] The common line contact unit 250 can be configured to overlap with the auxiliary common line 1310. An insulating buffer layer 412 and an interlayer insulation layer 414 are inserted between the common line 104 and the auxiliary common line 1310. Furthermore, the common line 104 and the auxiliary common line 1310 are configured to be electrically connected through a plurality of auxiliary common line contact holes 1020 passing through the insulating buffer layer 412 and the interlayer insulation layer 414.

[0295] Even with the auxiliary common line 1310 present, the above configuration helps minimize the increase in parasitic capacitance because it does not overlap with the gate line 108. Furthermore, since the common line 104 and the auxiliary common line 1310 can overlap outside the intersection area of ​​the gate line 108 and the auxiliary common line 1310, the line resistance value can be reduced. Therefore, the linewidth of the common line 104 can be reduced. This facilitates the realization of a high-resolution top-emitting electroluminescent display device.

[0296] Figure 15 An electroluminescent display device 1500 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0297] The electroluminescent display device 1500 is characterized in that it includes an auxiliary common line 1010 and a common line welding unit 650 of the electroluminescent display device 1000, and an auxiliary common line 1310 and a common line contact unit 250 of the electroluminescent display device 1300. For the sake of brevity and convenience, redundant features have been omitted.

[0298] According to the above configuration, the number of common line bonding units 650 can be reduced. In addition, it is beneficial to reduce the thermal stress transmitted to the electroluminescent layer of the electroluminescent display device, because during the manufacturing process of the electroluminescent display device, a smaller number of common line bonding units 650 can result in less heat generated by the laser.

[0299] In some embodiments, the common line welding unit 650 and the common line contact unit 250 may be alternately arranged along a first direction on each common line 104.

[0300] Figure 16 An electroluminescent display device 1600 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0301] The electroluminescent display device 1600 is characterized in that the positions of the anode line 1606 and the auxiliary anode line 1616 of the electroluminescent display device 1600 are interchanged relative to the anode line 1006 and the auxiliary anode line 1016 of the electroluminescent display device 1000. For the sake of brevity and convenience, redundant features are omitted.

[0302] like Figure 16As shown, the positions of anode line 1606 and auxiliary anode line 1616 can be interchanged. However, this disclosure is not limited to this; the positions of common line 104 and auxiliary common line 1010 can also be interchanged. That is, gate line 108 is configured to intersect one of the anode line and the auxiliary anode line, and gate line 108 is configured to intersect one of the common line and the auxiliary common line.

[0303] Even though there are auxiliary anode lines and auxiliary common lines, the above configuration helps to minimize the increment of parasitic capacitance because they do not overlap with gate line 108.

[0304] Figure 17 and Figure 18 An electroluminescent display device 1700 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0305] The electroluminescent display device 1700 is characterized in that it further includes a pixel electrode common line 1760 extending along a first direction. The pixel electrode common line 1760 may be made of the same material as the connecting electrode 253 and / or the pixel electrode 230. For the sake of brevity and convenience, its redundant features are omitted.

[0306] Figure 18 This is a schematic cross-sectional view illustrating the common line welding unit of an electroluminescent display device 1700. Figure 18 Corresponding to Figure 17 The cross-section line A-A'.

[0307] like Figure 18 As shown, the cross-sectional structure of the common line welding unit 1750 is similar to that of... Figure 9 The cross-sectional structure of the common line welding unit 850 shown is basically the same. For the sake of simplicity and ease of description, its redundant features have been omitted.

[0308] According to the above configuration, the pixel electrode common line 1760 can electrically connect the common lines 104 that are spaced apart from each other. Furthermore, even if each of the common lines 104 may have line resistance deviations caused by variations in the width and / or thickness of the common lines 104, the above configuration is beneficial in reducing the degree of line resistance deviation of the pixel electrode common line 1760. Therefore, it is advantageous for utilizing the space (i.e., gap) between the pixel electrodes 230 arranged along the second direction and for improving the uniformity of the cathode voltage ELVSS.

[0309] exist Figure 19 An electroluminescent display device 1900 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0310] The structure of the common line contact unit 1950 of the electroluminescent display device 1900 is configured to, as... Figure 2The common line contact unit 250 shown is substantially similar. That is, the structure of the exposed electroluminescent layer portion 1951 can be configured to be substantially similar to the structure of the exposed electroluminescent layer portion 251; the structure of the common line contact unit contact hole 1952 can be configured to be substantially similar to the structure of the common line contact unit contact hole 252; the structure of the connecting electrode 1953 can be configured to be substantially similar to the structure of the connecting electrode 253; the connecting electrode 1953 can be made of the same metal material as the pixel electrode common line 1960 extending along the first direction; the structure of the pixel electrode common line 1960 can be configured to be substantially similar to the structure of the pixel electrode common line 1760; and the connecting electrode 1953 can be configured to directly contact the pixel electrode common line 1760. Additionally, a portion of the connecting electrode 1953 can be extended to accommodate the pixel electrode common line 1760.

[0311] According to the above configuration, the pixel electrode common line 1960 can electrically connect the common lines 104 that are spaced apart from each other. Even though each of the common lines 104 may have line resistance deviations caused by variations in the width and / or thickness of the common lines 104, this structure is advantageous in reducing the degree of line resistance deviation of the common lines through the pixel electrode common line 1960. Therefore, it is advantageous for utilizing the space (i.e., gap) between the pixel electrodes 230 arranged along the second direction and for improving the uniformity of the cathode voltage ELVSS.

[0312] exist Figure 20 An electroluminescent display device 2000 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0313] like Figure 20 The structure of the common line bonding unit 2050 of the electroluminescent display device 2000 shown can be configured to, as... Figure 17 The common line welding unit 1750 shown is substantially similar; and the structure of the pixel electrode common line 2060 can be configured to be substantially similar to that of the pixel electrode common line 1760. Furthermore, the auxiliary common line 1010 and the auxiliary anode line 1016 can be included in this structure.

[0314] According to the above configuration, the pixel electrode common line 2060 can electrically connect the spaced-apart common lines 104. Furthermore, even if each of the common lines 104 may have line resistance deviations caused by variations in the width and / or thickness of the common lines 104, the above configuration is beneficial in reducing the degree of line resistance deviation of the common lines through the pixel electrode common line 1960. In addition, the arrangement of the auxiliary common line 1010 and the auxiliary anode line 1016 can improve the uniformity of the cathode voltage ELVSS.

[0315] exist Figure 21An electroluminescent display device 2100 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0316] like Figure 21 The common line contact unit 1950 of the electroluminescent display device 2100 shown is as follows: Figure 19 The common line contact unit 1950 shown is basically similar. Furthermore, the pixel electrode common line 1960 can be configured to be similar to... Figure 17 The pixel electrode common line 1760 shown is basically similar. In addition, auxiliary common line 1310 and auxiliary anode line 1016 may be included in this structure.

[0317] According to the above configuration, the pixel electrode common line 1960 can electrically connect the spaced-apart common lines 104. Furthermore, even if each of the common lines 104 may have line resistance deviations caused by variations in the width and / or thickness of the common lines 104, the above configuration helps to reduce the degree of line resistance deviation by means of the pixel electrode common line 1960. In addition, the arrangement of the auxiliary common line 1310 and the auxiliary anode line 1016 can improve the uniformity of the cathode voltage ELVSS.

[0318] exist Figure 22 An electroluminescent display device 2200 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0319] The common line welding unit 2050 of the electroluminescent display device 2200 and such Figure 20 The common line welding unit 2050 shown is basically the same. Furthermore, as... Figure 22 The common line contact unit 1950 shown is as follows Figure 21 The common line contact unit shown is basically the same as that of 1950.

[0320] According to the above configuration, the pixel electrode common line 2060 can electrically connect the spaced-apart common lines 104. Furthermore, even if each of the common lines 104 has a line resistance deviation caused by variations in the width and / or thickness of the common lines 104, the above configuration helps to reduce the degree of line resistance deviation of the common lines through the pixel electrode common line 2060. In addition, the arrangement of the auxiliary common lines 1010 and 1310 and the auxiliary anode line 1016 can improve the uniformity of the cathode voltage ELVSS.

[0321] In some embodiments, the common line contact unit 1950 and the common line welding unit 2050 may be alternately arranged along a first direction on the pixel electrode common line 1960.

[0322] In some embodiments, the common line welding unit 2050 and the common line contact unit 1950 may be alternately arranged along a first direction on the pixel electrode common line 2060.

[0323] exist Figure 23 An electroluminescent display device 2300 according to yet another exemplary embodiment of the present disclosure is illustrated.

[0324] exist Figure 23 For ease of description, pixel electrode 230 is omitted. The electroluminescent display device 2300 is characterized by having additional lines within the second data line group G2.

[0325] A reference voltage line 2317 capable of compensating for the threshold voltage (Vth) of the driving transistor of the pixel circuit unit 120 is provided within the second data line group G2. Furthermore, the reference voltage line 2317 is configured to be electrically connected to the corresponding first sub-pixel circuit unit 121, second sub-pixel circuit unit 122, third sub-pixel circuit unit 123, and fourth sub-pixel circuit unit 124 of the pixel circuit unit 120, respectively. That is, the reference voltage line 2317 can be used as a compensation circuit. The reference voltage line 2317 can be connected to a data driver in the peripheral region surrounding the pixel region. The data driver can be configured to compensate for threshold voltage deviations of the driving transistor by detecting the voltage transmitted from the reference voltage line 2317. However, this disclosure is not limited thereto. In other words, each embodiment of this disclosure can be configured to arrange functional lines within the second data line group G2.

[0326] In some exemplary embodiments, a touch sensing line configured to sense touch may be provided within the second data line group G2. The touch sensing line may be connected to electrodes configured to sense capacitance or pressure.

[0327] In other exemplary embodiments, lines for adding functionality may be provided within the second data cable group G2.

[0328] In some exemplary embodiments, multiple lines for implementing different functions may be provided within the second data line group G2. For example, a reference voltage line and a touch sensing line may extend along a second direction, be spaced apart from each other, and may be provided between the third data line 113 and the fourth data line 114 of the second data line group G2.

[0329] In other exemplary embodiments, if multiple different functional lines are provided in the second data line group G2, each of the different functional lines may be made of at least one metal material, which is a metal layer serving as a common line and a metal layer serving as an auxiliary common line.

[0330] In other exemplary embodiments, at least two different functional lines are provided within the second data line group G2. Furthermore, of the at least two different functional lines, one line may be made of the same metal material as the common line, while the other line may be made of the same metal material as the auxiliary common line. Moreover, the at least two lines are insulated from each other by an insulating layer. Furthermore, they may overlap each other.

[0331] In some exemplary embodiments, the common line 104 may be disposed within a first data line group G1 or a second data line group G2. The anode line 106 may be disposed within a first data line group G1 or a second data line group G2. In other words, the data line group is capable of providing space for at least one signal line extending parallel to the data line group, wherein at least one signal line is disposed within the data line group.

[0332] In some exemplary embodiments, an electroluminescent display device may include: at least one quadruple pixel circuit unit, the at least one quadruple pixel circuit unit comprising a plurality of sub-pixel circuit units; at least one gate line disposed between the plurality of sub-pixel circuit units and extending along a first direction; at least one first data line group, the at least one first data line group comprising a first pair of data lines disposed on both sides of the at least one quadruple pixel circuit unit and extending along a second direction; at least one second data line group, the at least one second data line group comprising a second pair of data lines disposed between the sub-pixel circuit units and extending along the second direction; and at least one common line and at least one anode line, the at least one common line and the at least one anode line being disposed between the first pair of data lines of the first data line group and disposed along the second direction, wherein the at least one gate line intersects the at least one first data line group and the at least one second data line group.

[0333] In some exemplary embodiments, the electroluminescent display device may further include: a coated insulating layer located on the at least one quadruple pixel circuit unit and the at least one common line; a pixel electrode located on the coated insulating layer; an electroluminescent layer located on the pixel electrode; and a common electrode located on the electroluminescent layer, wherein the common electrode is electrically connected to the at least one common line in areas where the electroluminescent layer is not disposed.

[0334] In some exemplary embodiments, the electroluminescent display device may further include at least one of a common line contact unit and a common line welding unit, wherein the at least one of the common line contact unit and the common line welding unit is configured to electrically connect the common electrode and the at least one common line.

[0335] In some exemplary embodiments, the common line welding unit may be configured such that the common electrode is welded to the at least one common line in the region where the electroluminescent layer is laser-removed.

[0336] In some exemplary embodiments, the electroluminescent display device may further include a common line contact unit and a common line welding unit, wherein the common line contact unit and the common line welding unit are alternately arranged along the second direction.

[0337] In some exemplary embodiments, the electroluminescent display device may further include: at least one auxiliary common line, which overlaps with the at least one common line and is separated from the at least one common line along the second direction at the intersection of the at least one common electrode and the at least one gate line, wherein the at least one auxiliary common line is electrically connected to the at least one common line and is electrically insulated from the at least one gate line.

[0338] In some exemplary embodiments, the electroluminescent display device may further include: a light-shielding capacitor electrode, wherein the material of the light-shielding capacitor electrode is the same as the metal material of the at least one auxiliary common line, and wherein the light-shielding capacitor electrode is configured to shield the driving transistor of the at least one sub-pixel circuit unit from light; and an insulating buffer layer located between the at least one common line and the at least one auxiliary common line.

[0339] In some exemplary embodiments, the at least one auxiliary common line may be separated from the common line welding unit along the second direction and is configured not to overlap with the common line welding unit.

[0340] In some exemplary embodiments, the electroluminescent display device may further include: at least one auxiliary anode line, which overlaps with the at least one anode line and is separated from the at least one anode line along the second direction at the intersection of the at least one anode line and the at least one gate line, and the at least one auxiliary anode line may be electrically connected to the at least one common line, and an insulating buffer layer may be located between the at least one anode line and the at least one auxiliary anode line.

[0341] In some exemplary embodiments, both the at least one common line and the at least one anode line may comprise a first metallic material, and both the at least one auxiliary common line and the at least one auxiliary anode line may comprise a second metallic material, and the second metallic material may be different from the first metallic material.

[0342] In some exemplary embodiments, both the at least one common line and the at least one auxiliary anode line may comprise a first metallic material, and both the at least one auxiliary common line and the at least one anode line may comprise a second metallic material, and the second metallic material may be different from the first metallic material.

[0343] In some exemplary embodiments, the electroluminescent display device may further include: a connecting electrode disposed between the at least one common line and the common electrode, wherein the connecting electrode may be configured to electrically connect the at least one common line and the common electrode, wherein the connecting electrode and the pixel electrode may comprise a first metallic material, and wherein the connecting electrode may be configured to overlap with at least one of the common line contact unit and the common line welding unit.

[0344] In some exemplary embodiments, the common line welding unit may be configured such that the connecting electrode is welded to the at least one common line in the region where the electroluminescent layer is laser-removed.

[0345] In some exemplary embodiments, the electroluminescent display device may further include: a pixel electrode common line configured to electrically connect a plurality of common lines, wherein the pixel electrode common line may be disposed between the pixel electrodes and extend along the first direction, wherein the pixel electrode common line may be in direct contact with the connecting electrode, and wherein the pixel electrode common line and the connecting electrode may comprise the same metallic material.

[0346] In some exemplary embodiments, the common line contact unit may include a structure having an inverted conical shape, an exposed electroluminescent layer portion overlapping the connecting electrode, and a common line contact unit contact hole overlapping the connecting electrode.

[0347] In some exemplary embodiments, the electroluminescent display device may further include at least one functional line located between the second pair of data lines of the second data line group.

[0348] In some exemplary embodiments, an electroluminescent display device may include: a plurality of sub-pixel circuit units arranged in a matrix; at least one gate line disposed between the plurality of sub-pixel circuit units and extending along a first direction; a plurality of first data line groups and a plurality of second data line groups alternately disposed between the plurality of sub-pixel circuit units and extending along a second direction; a plurality of common lines disposed within the first data line groups or the second data line groups and extending along the second direction; and a plurality of anode lines disposed within the first data line groups or the second data line groups and extending along the second direction.

[0349] In some exemplary embodiments, the plurality of common lines may be arranged within the plurality of first data line groups, and the plurality of anode lines may be arranged within the plurality of second data line groups.

[0350] In some exemplary embodiments, the plurality of common lines may be arranged within the plurality of second data line groups, and the plurality of anode lines may be arranged within the plurality of first data line groups.

[0351] In some exemplary embodiments, both the plurality of common lines and the plurality of anode lines may be arranged within the plurality of first data line groups or the plurality of second data line groups.

[0352] In some exemplary embodiments, the space of the first data line group and the space of the second data line group can be determined according to the width of the signal lines disposed therein.

[0353] In some exemplary embodiments, the width of the common line may be wider than the width of the anode line, and the space of the first data line group or the second data line group containing the common line may be larger than the space of the first data line group or the second data line group containing the anode line.

[0354] In some exemplary embodiments, the electroluminescent display device may further include: an auxiliary common line overlapping the common line and an auxiliary anode line overlapping the anode line.

[0355] In some exemplary embodiments, one of the common line and the auxiliary common line may be formed of a solid signal line, and the other of the common line and the auxiliary common line may be formed of a plurality of island electrodes.

[0356] In some exemplary embodiments, the electroluminescent display device may further include: a plurality of sub-pixel electrodes electrically connected to the plurality of sub-pixel circuit units; and a plurality of pixel electrode common lines configured to electrically interconnect the plurality of common lines and extend along the first direction, wherein the plurality of sub-pixel electrodes may have a shape in which the width along the second direction is wider than the width along the first direction, and wherein the plurality of sub-pixel electrodes and the plurality of pixel electrode common lines may be alternately arranged along the second direction.

[0357] In some exemplary embodiments, a device may include: an array of a plurality of pixels, each pixel in the array having four sub-pixels configured for a top-emitting electroluminescent display device, each sub-pixel having a sub-pixel electrode and a sub-pixel circuit unit connected to the sub-pixel electrode, such that each pixel has four sub-pixel circuit units; four sub-pixel circuit units arranged in a 2×2 matrix, the four sub-pixel circuit units having a first and a second sub-pixel circuit unit forming an upper pair and a third and a fourth sub-pixel circuit unit forming a lower pair; and gate lines passing in a row direction between the upper pair of sub-pixel circuit units and the lower pair of sub-pixel circuit units, and electrically connected to the four sub-pixel circuit units respectively. A sub-pixel circuit unit; a first data line, the first data line passing through the first sub-pixel circuit unit and the fourth sub-pixel circuit unit in the column direction and electrically connected to the first sub-pixel circuit unit; a second data line, the second data line passing through the second sub-pixel circuit unit and the third sub-pixel circuit unit in the column direction and electrically connected to the second sub-pixel circuit unit; and a third data line and a fourth data line, the third data line and the fourth data line passing through the first sub-pixel circuit unit and the second sub-pixel circuit unit and the third sub-pixel circuit unit and the fourth sub-pixel circuit unit in the column direction and electrically connected to the third sub-pixel circuit unit and the fourth sub-pixel circuit unit, respectively.

[0358] In some exemplary embodiments, the device may further include: an anode line that runs through adjacent sub-pixel circuit units in the column direction; and an extension unit that extends in the row direction and electrically interconnects the anode line with a third and fourth sub-pixel circuit unit of a pixel and a first and second sub-pixel circuit unit of a different pixel adjacent to the pixel in the column direction.

[0359] In some exemplary embodiments, the device may further include: at least one signal line extending along the column direction and interposed in a first region between a first data line of a pixel and a second data line of a different pixel adjacent to the pixel in the row direction, interposed in a second region between a third data line and a fourth data line of a pixel, or interposed in both the first region and the second region.

[0360] In some exemplary embodiments, the at least one signal line may be at least one of a common line, an anode line, a reference voltage line, a touch sensing line, an external compensation line, a discharge line, and an initial line.

[0361] In some exemplary embodiments, the first region of the array of the plurality of pixels may have the common line or the anode line in an alternating manner.

[0362] In some exemplary embodiments, the first region may have the common line, and the second region may have the anode line.

[0363] In some exemplary embodiments, an electroluminescent display device may include: a pixel circuit unit comprising a plurality of sub-pixel circuit units; a gate line disposed between the plurality of sub-pixel circuit units and extending along a first direction; a first data line group comprising a first pair of data lines disposed on both sides of the pixel circuit units and extending along a second direction; a second data line group comprising a second pair of data lines disposed between the sub-pixel circuit units and extending along the second direction; a common line and an anode line disposed between the first pair of data lines of the first data line group and disposed along the first direction; a coated insulating layer located on the pixel circuit units and the common line; a pixel electrode located on the coated insulating layer; and a pixel electrode common line disposed between the plurality of pixel electrodes and extending along the first direction, wherein the pixel electrode common line can electrically connect multiple common lines, and wherein the gate line can intersect the first data line group and the second data line group.

[0364] In some exemplary embodiments, the electroluminescent display device further includes a connecting electrode disposed between the common line and the common electrode, wherein the pixel electrode common line can directly contact the connecting electrode.

[0365] In some exemplary embodiments, the pixel electrode common line may include the same material as the connection electrode.

[0366] In some exemplary embodiments, the pixel electrode common line may include the same material as the pixel electrode.

[0367] In some exemplary embodiments, the electroluminescent display device may also include an auxiliary common line and an auxiliary anode line.

[0368] According to the above configuration, at least one function line can be set in the second data line group G2, and the brightness uniformity of the electroluminescent display device can be increased. Furthermore, it is advantageous that various functions can be easily provided because additional lines (e.g., touch sensing lines) can be easily set in the second data line group G2.

[0369] Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. The scope of protection of the present invention should be interpreted based on the appended claims, and all technical concepts within the equivalent scope of the appended claims should be interpreted as falling within the scope of the present disclosure.

Claims

1. An electroluminescent display device, the electroluminescent display device comprising: A first substrate, the first substrate including a pixel region and a non-pixel region; A plurality of pixel circuit units are disposed in the pixel region on the first substrate, and each pixel circuit unit includes a transistor, the transistor including a semiconductor layer, a gate, a drain and a source. At least one common line is disposed in the pixel region on the first substrate; A planarization layer is disposed on the transistor and the common line; A pixel electrode, which is disposed on the planarization layer and electrically connected to the source of the transistor; A dam, which is disposed on the planarization layer and covers the boundary of the pixel electrode; A light-emitting layer is disposed on the pixel electrode and the embankment; A common electrode, which is disposed on the light-emitting layer; as well as At least one anode line is configured to supply an anode voltage to the pixel circuit unit. The common electrode is electrically connected to the at least one common line in the area where the light-emitting layer is not disposed. Wherein, the line width of the at least one common line is greater than the line width of the at least one anode line.

2. The electroluminescent display device according to claim 1, further comprising a first insulating layer disposed between the common line and the transistor, and disposed between the common line and the planarization layer.

3. The electroluminescent display device according to claim 1, wherein, The planarization layer is formed of an organic material with a thickness of 2 μm.

4. The electroluminescent display device according to claim 2, further comprising an insulating buffer layer, the insulating buffer layer being disposed between the first substrate and the transistor and between the first substrate and the common line. in, The insulating buffer layer is made of silicon nitride oxide (SiONx), silicon oxide (SiOx), and / or silicon nitride (SiNx).

5. The electroluminescent display device according to claim 4, wherein, The insulating buffer layer has a thickness of 1000 Å or greater.

6. The electroluminescent display device according to claim 4, wherein, The common electrode and the common wire are electrically connected through a contact hole. The contact hole is formed by patterning the embankment, the planarization layer, and the first insulating layer.

7. The electroluminescent display device according to claim 6, further comprising a connecting electrode electrically connected to the common electrode in a region where the light-emitting layer is not disposed. in, The connecting electrode is electrically connected to the common line through the contact hole.

8. The electroluminescent display device according to claim 7, wherein, The connection electrode is made of the same material as the pixel electrode and is disposed on the planarization layer.

9. The electroluminescent display device according to claim 1, wherein, The pixel circuit unit also includes a capacitor. The capacitor includes a first electrode formed of the same material as the gate and a second electrode formed of the same material as the source and the drain.

10. The electroluminescent display device according to claim 6, wherein, The contact hole is covered by the dike.

11. The electroluminescent display device according to claim 1, wherein, The light-emitting layer and the common electrode form a common layer covering the pixel area.

12. The electroluminescent display device according to claim 2, wherein the electroluminescent display device further comprises a second insulating layer disposed on the common electrode.

13. The electroluminescent display device according to claim 12, wherein the electroluminescent display device further comprises a filler material disposed on the second insulating layer.

14. The electroluminescent display device according to claim 13, further comprising a color filter and a black background disposed on the filler material.

15. The electroluminescent display device according to claim 14, further comprising a second substrate disposed on the color filter and the black background.

16. The electroluminescent display device according to claim 1, wherein, Each of the gate, the drain, and the source is made of a metallic material.

17. The electroluminescent display device according to claim 16, wherein, At least one of the gate, the drain, and the source has a multilayer structure in which a molybdenum alloy is disposed on copper.

18. The electroluminescent display device according to claim 1, further comprising: At least one gate line is disposed between a plurality of sub-pixel circuit units constituting the pixel circuit unit and extends along a first direction; At least one first data line group, the at least one first data line group including a first pair of data lines disposed on both sides of the pixel circuit unit, and the at least one first data line group extending along a second direction; as well as At least one second data line group, the at least one second data line group including a second pair of data lines disposed between the sub-pixel circuit units, and the at least one second data line group extending along the second direction. Wherein, at least one anode line is disposed between the data lines of the first pair of data lines of the first data line group on one side of the pixel circuit unit and is disposed along the second direction. Wherein, the at least one select line intersects with the at least one first data line group and the at least one second data line group. Wherein, the pixel circuit unit is a quadruple pixel circuit unit including the plurality of sub-pixel circuit units, and The common line is configured to supply a cathode voltage to the pixel circuit unit, and the common line is disposed between the data lines of the first pair of data lines of the first data line group on the opposite side of the pixel circuit unit and is disposed along the second direction.

19. The electroluminescent display device according to claim 18, further comprising at least one of a common line contact unit and a common line bonding unit, wherein at least one of the common line contact unit and the common line bonding unit is configured to electrically connect the common electrode and the at least one common line. in, The common line welding unit is configured such that the common electrode is welded to the at least one common line in the region where the light-emitting layer is removed by laser.

20. The electroluminescent display device according to claim 18, further comprising a common line contact unit and a common line soldering unit, in, The common line contact unit and the common line welding unit are alternately arranged along the second direction, and The common line welding unit is configured such that the common electrode is welded to the at least one common line in the region where the light-emitting layer is removed by laser.

21. The electroluminescent display device according to claim 19, further comprising at least one auxiliary common line overlapping the at least one common line. in, The at least one auxiliary common line is configured not to overlap with the intersection of the at least one common line and the at least one gate line, the at least one auxiliary common line is electrically connected to the at least one common line, and the at least one auxiliary common line is electrically insulated from the at least one gate line.

22. The electroluminescent display device of claim 21, further comprising a light-shielding capacitor electrode configured to shield at least one sub-pixel circuit unit from light. in, The material of the light-shielding capacitor electrode is the same as the metal material of the at least one auxiliary common line.

23. The electroluminescent display device according to claim 21, wherein the electroluminescent display device further comprises an insulating buffer layer between the at least one common line and the at least one auxiliary common line.

24. The electroluminescent display device according to claim 21, further comprising at least one auxiliary anode line overlapping the at least one anode line. in, The at least one auxiliary anode line is configured not to overlap with the intersection of the at least one anode line and the at least one gate line, and The at least one auxiliary anode line is electrically connected to the at least one common line.

25. The electroluminescent display device according to claim 24, wherein, The at least one auxiliary anode line is made of the same material as the at least one common line.

26. The electroluminescent display device according to claim 19, further comprising: A connecting electrode, wherein the connecting electrode is disposed between the at least one common line and the common electrode, and the connecting electrode is configured to overlap with at least one of the common line contact unit and the common line welding unit; and Pixel electrode common lines, configured to electrically connect multiple common lines. The pixel electrode common line is disposed between the sub-pixel circuit units and extends along the first direction. The pixel electrode common line is in direct contact with the connecting electrode. The pixel electrode common line and the connection electrode are made of the same metal material.

27. The electroluminescent display device according to claim 26, wherein, The common line contact unit includes a structure with an inverted cone shape, an exposed electroluminescent layer portion overlapping the connecting electrode, and a common line contact unit contact hole overlapping the connecting electrode.

28. An electroluminescent display device, the electroluminescent display device comprising: A substrate, the substrate comprising pixel regions and non-pixel regions; A plurality of pixel circuit units are disposed in the pixel region on the substrate, each of the plurality of pixel circuit units comprising: A transistor, the transistor comprising a semiconductor layer, a gate, a drain, and a source; and A capacitor comprising a first electrode formed of the same material as the gate electrode and a second electrode formed of the same material as the source electrode and the drain electrode. At least one common line is disposed in the pixel region on the substrate; A planarization layer is disposed on the transistor and the common line; A pixel electrode, which is disposed on the planarization layer and electrically connected to the source of the transistor; A dam, which is disposed on the planarization layer and covers the boundary of the pixel electrode; A light-emitting layer is disposed on the pixel electrode and the embankment; A common electrode, wherein the common electrode is disposed on the light-emitting layer; and At least one anode line is configured to supply an anode voltage to the pixel circuit unit. The common electrode is electrically connected to the common line. Wherein, the line width of the at least one common line is greater than the line width of the at least one anode line.

29. The electroluminescent display device according to claim 28, wherein, The common electrode is electrically connected to the at least one common line in the area where the light-emitting layer is not provided.

30. The electroluminescent display device according to claim 28, further comprising a first insulating layer disposed between the common line and the transistor, and disposed between the common line and the planarization layer.

31. The electroluminescent display device according to claim 28, wherein, The planarization layer is formed of an organic material with a thickness of 2 μm.

32. The electroluminescent display device according to claim 30, further comprising an insulating buffer layer disposed between the substrate and the transistor and between the substrate and the common line. in, The insulating buffer layer is made of silicon nitride oxide (SiONx), silicon oxide (SiOx), and / or silicon nitride (SiNx).

33. The electroluminescent display device according to claim 32, wherein, The insulating buffer layer has a thickness of 1000 Å or greater.

34. The electroluminescent display device according to claim 32, wherein, The common electrode and the common wire are electrically connected through a contact hole. The contact hole is formed by patterning the embankment, the planarization layer, and the first insulating layer.

35. The electroluminescent display device according to claim 34, further comprising a connecting electrode electrically connected to the common electrode in a region where the light-emitting layer is not disposed. in, The connecting electrode is electrically connected to the common line through the contact hole.

36. The electroluminescent display device according to claim 35, wherein, The connection electrode is made of the same material as the pixel electrode and is disposed on the planarization layer.

37. The electroluminescent display device according to claim 34, wherein, The contact hole is covered by the dike.

38. The electroluminescent display device according to claim 28, wherein, The light-emitting layer and the common electrode form a common layer covering the pixel area.

39. The electroluminescent display device according to claim 30, wherein the electroluminescent display device further comprises a second insulating layer disposed on the common electrode.

40. The electroluminescent display device according to claim 39, wherein the electroluminescent display device further comprises a filler material disposed on the second insulating layer.

41. The electroluminescent display device according to claim 40, further comprising a color filter and a black background disposed on the filler material.

42. The electroluminescent display device according to claim 41, wherein the electroluminescent display device further comprises another substrate disposed on the color filter and the black background.

43. The electroluminescent display device according to claim 28, wherein, Each of the gate, the drain, and the source is made of a metallic material.

44. The electroluminescent display device according to claim 43, wherein, At least one of the gate, the drain, and the source has a multilayer structure in which a molybdenum alloy is disposed on copper.

45. The electroluminescent display device according to claim 28, further comprising: At least one gate line is disposed between a plurality of sub-pixel circuit units constituting the pixel circuit unit and extends along a first direction; At least one first data line group, the at least one first data line group including a first pair of data lines disposed on both sides of the pixel circuit unit, and the at least one first data line group extending along a second direction; as well as At least one second data line group, the at least one second data line group including a second pair of data lines disposed between the sub-pixel circuit units, and the at least one second data line group extending along the second direction. Wherein, at least one anode line is disposed between the data lines of the first pair of data lines of the first data line group on one side of the pixel circuit unit and is disposed along the second direction. Wherein, the at least one select line intersects with the at least one first data line group and the at least one second data line group. Wherein, the pixel circuit unit is a quadruple pixel circuit unit including the plurality of sub-pixel circuit units, and The common line is configured to supply a cathode voltage to the pixel circuit unit, and the common line is disposed between the data lines of the first pair of data lines of the first data line group on the opposite side of the pixel circuit unit and is disposed along the second direction.

46. ​​The electroluminescent display device according to claim 45, further comprising at least one of a common line contact unit and a common line bonding unit, wherein at least one of the common line contact unit and the common line bonding unit is configured to electrically connect the common electrode and the at least one common line. in, The common line welding unit is configured such that the common electrode is welded to the at least one common line in the region where the light-emitting layer is removed by laser.

47. The electroluminescent display device according to claim 45, further comprising a common line contact unit and a common line soldering unit, in, The common line contact unit and the common line welding unit are alternately arranged along the second direction, and The common line welding unit is configured such that the common electrode is welded to the at least one common line in the region where the light-emitting layer is removed by laser.

48. The electroluminescent display device according to claim 46, further comprising at least one auxiliary common line overlapping the at least one common line. in, The at least one auxiliary common line is configured not to overlap with the intersection of the at least one common line and the at least one gate line, the at least one auxiliary common line is electrically connected to the at least one common line, and the at least one auxiliary common line is electrically insulated from the at least one gate line.

49. The electroluminescent display device of claim 48, further comprising a light-shielding capacitor electrode configured to shield at least one driving transistor of a sub-pixel circuit unit from light. in, The material of the light-shielding capacitor electrode is the same as the metal material of the at least one auxiliary common line.

50. The electroluminescent display device according to claim 48, further comprising an insulating buffer layer between the at least one common line and the at least one auxiliary common line.

51. The electroluminescent display device according to claim 48, further comprising at least one auxiliary anode line overlapping the at least one anode line. in, The at least one auxiliary anode line is configured not to overlap with the intersection of the at least one anode line and the at least one gate line, and The at least one auxiliary anode line is electrically connected to the at least one common line.

52. The electroluminescent display device according to claim 51, wherein, The at least one auxiliary anode line is made of the same material as the at least one common line.

53. The electroluminescent display device according to claim 46, further comprising: A connecting electrode, wherein the connecting electrode is disposed between the at least one common line and the common electrode, and the connecting electrode is configured to overlap with at least one of the common line contact unit and the common line welding unit; and Pixel electrode common lines, configured to electrically connect multiple common lines. The pixel electrode common line is disposed between the sub-pixel circuit units and extends along the first direction. The pixel electrode common line is in direct contact with the connecting electrode, and The pixel electrode common line and the connection electrode are made of the same metal material.

54. The electroluminescent display device according to claim 53, wherein, The common line contact unit includes a structure with an inverted cone shape, an exposed electroluminescent layer portion overlapping the connecting electrode, and a common line contact unit contact hole overlapping the connecting electrode.

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