Frequency-based impedance adjustment in a tuning circuit

Abstract

A substrate processing system for processing a substrate in a processing chamber includes a matching network, a first tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from an RF generator and matches the input of the matching network to the output impedance of the RF generator. The tuning circuit is different from the matching network and includes circuit components having a first impedance. The tuning circuit receives the output of the matching network and outputs a second RF signal to a first electrode of a substrate support. The controller determines a target impedance for the circuit components and, based on the target impedance, signals the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency, thereby changing the first impedance of the circuit components to match the target impedance.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to U.S. Provisional Application No. 62 / 935,976, filed on November 15, 2019. The entire disclosure of the above - cited application is incorporated herein by reference. Technical field

[0003] The present invention relates to an electrostatic support device using electrostatic attraction, and more particularly to a tuning circuit and a radio - frequency (RF) electrode for clamping an electrostatic support device. Background art

[0004] The background description provided here is for the purpose of generally presenting the background of the disclosure. The work of the currently named inventors is neither expressly nor implicitly admitted to be prior art to the disclosure in the respects described in this background art section and in various aspects of the specification that could not be determined to be prior art at the time of filing the application.

[0005] A substrate processing system can be used for etching, depositing, and / or other processing of substrates such as semiconductor wafers. Exemplary processes that can be performed on a substrate include, but are not limited to, plasma - enhanced chemical vapor deposition (PECVD) processes, physical vapor deposition (PVD) processes, ion implantation processes, and / or other etching, deposition, and cleaning processes. For example, during an etching process, a substrate can be placed on an electrostatic chuck (ESC) in a substrate processing system and a thin film on the substrate can be etched. Summary of the invention

[0006] A substrate processing system for processing a substrate in a processing chamber is provided. The substrate processing system includes a matching network, a first tuning circuit, and a controller. The matching network is configured to receive a first radio - frequency (RF) signal having a first frequency from an RF generator and match the input of the matching network to the output impedance of the RF generator. The first tuning circuit is different from the matching network and includes a first circuit component having a first impedance. The first tuning circuit is configured to receive the output of the matching network and output a second RF signal to a first electrode of a substrate support. The controller is configured to determine a target impedance for the first circuit component and, based on the target impedance, signal the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency, thereby changing the first impedance of the first circuit component to match the target impedance.

[0007] Among other features, the substrate processing system further includes the radio frequency generator having a central frequency, and the radio frequency generator is configured to generate the first radio frequency signal having the first frequency based on a control signal. The controller is configured to generate the control signal. The first frequency differs from the central frequency by a predetermined range.

[0008] Among other features, the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the first tuning circuit.

[0009] Among other features, the controller is configured to adjust the first frequency to the second frequency independently of matching the input of the matching network to the output impedance of the radio frequency generator.

[0010] Among other features, the controller is configured to adjust the first frequency to the second frequency without affecting the impedance matching between the matching network and the radio frequency generator.

[0011] Among other features, the matching network is configured to maintain the impedance matching between the input of the matching network and the output of the radio frequency generator when the controller adjusts the first frequency to the second frequency.

[0012] Among other features, the first tuning circuit includes the first circuit component and the second circuit component. The first circuit component is connected to the first electrode. The second circuit component is connected to the second electrode in the substrate support. The controller is configured to adjust the first frequency to the second frequency to adjust the first impedance of the first circuit component and the second impedance of the second circuit component to change the power distribution from the first tuning circuit to the first electrode and the second electrode.

[0013] Among other features, the frequency of the second radio frequency signal is the same as the frequency of the first radio frequency signal.

[0014] Among other features, the controller is configured to adjust the capacitance or inductance of the first circuit component in addition to adjusting the first frequency to the second frequency when adjusting the first impedance to match the target impedance.

[0015] Among other features, the controller is configured to maintain at least one of the capacitance or inductance of the first circuit component at a fixed value when adjusting the first impedance.

[0016] Among other features, the first tuning circuit includes distributing the total amount of power received from the matching network to the first circuit component and the second circuit component. The controller is configured to adjust the first frequency to the second frequency to adjust a first portion of the total amount of power provided to the first circuit component and a second portion of the total amount of power provided to the second circuit component.

[0017] Among other features, the substrate processing system further includes: a source terminal; and the substrate support including the first electrode and the second electrode. The first electrode and the second electrode receive power from the matching network via the source terminal. The first tuning circuit includes at least one of: a first impedance group connected in series between the first electrode and the matching network, where the first impedance group receives the second radio frequency signal from the matching network via the source terminal, or a second impedance group connected between an output of the matching network and a reference terminal, where the second impedance group receives the second radio frequency signal from the matching network via the source terminal.

[0018] Among other features, the first tuning circuit includes a first impedance group and a second impedance group.

[0019] Among other features, the substrate processing system further includes a second tuning circuit, a third tuning circuit, and a third electrode. The first tuning circuit is connected to the first electrode to modify the output of the matching network to generate the second radio frequency signal. The second tuning circuit is connected to the second electrode and is configured to modify the output of the matching network to generate a third radio frequency signal provided to the second electrode. The third tuning circuit is connected to the third electrode and is configured to modify the output of the matching network to generate a fourth radio frequency signal provided to the third electrode.

[0020] Among other features, the substrate support is an electrostatic chuck. The first electrode and the second electrode are clamping electrodes and are configured to receive a clamping voltage to clamp the substrate to the substrate support. The third electrode is a bias electrode and is configured to receive a bias voltage.

[0021] Among other features, the substrate support is an electrostatic chuck. The first electrode is a clamping electrode. The second electrode and the third electrode are bias electrodes.

[0022] Among other features, no matching network is connected between (i) the source terminal and (ii) the first electrode and the second electrode.

[0023] Among other features, the first circuit component is connected to the first and second electrodes in the substrate support and affects the power distribution to the first and second electrodes.

[0024] Among other features, a method of operating a substrate processing system is provided. The method includes: selecting a process; determining a recipe for the selected process, the recipe including system operation parameters; determining a first target impedance value for the frequency of a radio frequency generator and the impedance of a tuning circuit based on the selected process and the system operation reference; sending a signal to the radio frequency generator to generate a first radio frequency signal; impedance matching the output of the radio frequency generator through a matching network, where the matching network is different from the tuning circuit; tuning the signal output of the matching network through the matching network to generate a second radio frequency signal; providing the second radio frequency signal to a first electrode in a substrate support; and adjusting a first frequency of the first radio frequency signal to a second frequency to adjust the impedance of the tuning circuit to match the first target impedance value.

[0025] Among other features, the method further includes adjusting the first frequency to the second frequency independent of impedance matching the output of the matching network to the output impedance of the radio frequency generator.

[0026] Among other features, the method further includes adjusting the first frequency to the second frequency without affecting the impedance matching between the matching network and the radio frequency generator.

[0027] Among other features, the method further includes maintaining impedance matching between the input of the matching network and the output of the radio frequency generator through the matching network when adjusting the first frequency to the second frequency.

[0028] Among other features, the method further includes: collecting sensor output data; determining a second target impedance value based on the sensor output data; and adjusting the first frequency to a third frequency to adjust the impedance of the tuning circuit to match the second impedance value.

[0029] Among other features, the method further includes adjusting at least one of a capacitance value or an inductance value in the impedance to match the first target impedance value.

[0030] Among other features, the method further includes adjusting the first frequency to the second frequency to adjust the impedance to match the first impedance value without adjusting the capacitance value of the impedance.

[0031] Among other features, the method further includes adjusting the first frequency to the second frequency to adjust the impedance to match the first impedance value without adjusting the inductance value of the impedance.

[0032] Among other features, the impedance is connected in parallel to the first and second electrodes in the substrate support and affects the power distribution to the first and second electrodes.

[0033] Among other features, the method further includes: placing a substrate on the substrate support in a processing chamber; and performing a processing operation for the selected processing, which includes supplying power from the matching network to the first and second electrodes in the substrate support. The tuning circuit includes at least one of the following: a first impedance group connected in series between the first electrode and the matching network, where the first impedance group receives the second radio frequency signal from the matching network; or a second impedance group connected between the output of the matching network and a reference terminal, where the second impedance group receives the second radio frequency signal from the matching network.

[0034] Among other features, the method further includes (i) adjusting the first frequency to the second frequency during the processing operation; and (ii) adjusting at least one of the capacitance value or inductance value of the first impedance group or the second impedance group.

[0035] Among other features, the method further includes adjusting the impedance value of the first tuning circuit during the processing operation. Among other features, the method further includes, during the processing operation: collecting sensor output data; determining one or more parameters based on the sensor output data; and adjusting the impedance value of the first impedance group or the second impedance group based on the one or more parameters.

[0036] Among other features, the method further includes: determining a feature or characteristic of the processing chamber; and setting the impedance value of the first impedance group or the second impedance group based on the feature or characteristic.

[0037] Among other features, the method further includes: determining a feature or characteristic of the substrate support; and setting the impedance value of the first impedance group or the second impedance group based on the feature or characteristic.

[0038] Among other features, the method further includes adjusting the impedance of at least one of the first impedance group or the second impedance group to follow a corresponding trajectory based on a change in the characteristic.

[0039] Among other features, the method further includes calculating or determining the trajectory based on at least one of the following: the feature; the characteristic; one or more other features of the substrate, the substrate support, or the processing chamber; and one or more other characteristics of the substrate, the substrate support, or the processing chamber.

[0040] Among other features, the method further includes: determining a feature or characteristic of the substrate; and setting the impedance value of the tuning circuit based on the feature or characteristic.

[0041] Among other features, the method further includes: supplying a clamping voltage to the first electrode through the matching network to clamp the substrate onto the substrate support; supplying a bias voltage to the second electrode; and tuning the clamping voltage and the bias voltage through the tuning circuit or another tuning circuit. The substrate support is an electrostatic chuck.

[0042] Among other features, a substrate processing system is provided that includes a matching network, a tuning circuit, and a controller. The matching network is configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and match the input of the matching network to the output impedance of the radio frequency generator. The tuning circuit is different from the matching network. The tuning circuit is configured to output a second radio frequency signal to a first electrode in a substrate support and output a third radio frequency signal to a second electrode in the substrate support based on the output of the matching network. The controller is configured to adjust the power distribution to the first electrode and the second electrode in the substrate support by: signaling the radio frequency generator to adjust the first frequency of the first radio frequency signal received at the matching network to a second frequency.

[0043] Among other features, the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the tuning circuit.

[0044] Among other features, the controller is configured to adjust the first frequency to the second frequency independent of matching the input of the matching network to the output impedance of the radio frequency generator.

[0045] Among other features, the controller is configured to adjust the first frequency to the second frequency without affecting the impedance matching between the matching network and the radio frequency generator.

[0046] Among other features, the matching network is configured to maintain the impedance matching between the input of the matching network and the output of the radio frequency generator when the controller adjusts the first frequency to the second frequency.

[0047] Among other features, the tuning circuit includes a first circuit component and a second circuit component. The first circuit component is connected to the first electrode. The second circuit component is connected to the second electrode; and adjusting the first frequency to the second frequency changes a first impedance of the first circuit component and a second impedance of the second circuit component.

[0048] Among other features, the tuning circuit supplies a total amount of power to the first electrode and the second electrode. Adjusting the first frequency to the second frequency adjusts a first impedance to a second impedance, thereby adjusting a first percentage of the total amount of power supplied to the first electrode and a second percentage of the total amount of power supplied to the second electrode.

[0049] Among other features, the controller is configured to adjust a capacitance value or an inductance value of the first circuit component when adjusting the first frequency to the second frequency.

[0050] Among other features, the controller is configured to maintain at least one of a capacitance value or an inductance value of the first circuit component at a fixed value when adjusting the first frequency to the second frequency.

[0051] Based on the detailed description, the claims, and the drawings, a further scope of applicability of the present disclosure will become apparent. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] The present disclosure will be more fully understood from the detailed description and the drawings, in which:

[0053] Figure 1 is a functional block diagram of an example of a substrate processing system including a frequency controller, an ESC having electrodes, and a corresponding matching network and one or more tuning circuits according to an embodiment of the present invention;

[0054] Figure 2 is a functional block diagram of an exemplary capacitive coupling circuit including a tuning circuit for a clamping electrode and a bias electrode according to an embodiment of the present invention;

[0055] Figure 3 is a functional block diagram of an example of a capacitive coupling circuit including a tuning circuit for two clamping electrodes and a bias electrode according to an embodiment of the present invention;

[0056] Figure 4 is a functional block diagram of an example of a capacitive coupling circuit including a tuning circuit for a clamping electrode and two bias electrodes according to an embodiment of the present invention;

[0057] Figure 5A functional block diagram of an example of a capacitive coupling circuit including a tuning circuit for clamping an electrode and three bias electrodes according to an embodiment of the present invention;

[0058] Figure 6 A functional block diagram of an example of a tuning circuit for clamping an electrode and a bias electrode according to an embodiment of the present invention;

[0059] Figure 7 A functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, the tuning circuit being connected to a single RF power supply and including inductors and capacitors connected in series for two clamping electrodes and a bias electrode ring;

[0060] Figure 8 A functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, the tuning circuit being connected to a single RF power supply and including inductors and capacitors connected in parallel for two clamping electrodes and a bias electrode ring;

[0061] Figure 9 A functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, the tuning circuit being connected to a dual RF power supply and including inductors and capacitors connected in series and inductors and capacitors connected in parallel for two clamping electrodes and a bias electrode ring;

[0062] Figure 10 A functional block diagram of an example of two tuning circuits according to an embodiment of the present invention, the two tuning circuits being connected to respective RF power supplies and including inductors and capacitors connected in series or inductors and capacitors connected in parallel for two clamping electrodes and a bias electrode ring;

[0063] Figure 11 A functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, the tuning circuit including capacitors and inductors connected in parallel for two clamping electrodes and a bias electrode ring;

[0064] Figure 12 Shows an operation method of a substrate processing system according to an embodiment of the present invention, which includes setting and adjusting the RF generator frequency and the impedance value of the tuning circuit of the electrodes of the electrostatic chuck; and

[0065] Figure 13 An example of a substrate support including an outer ring electrode and two inner electrodes according to an embodiment of the present invention.

[0066] In the drawings, reference numerals may be reused to identify similar and / or identical elements. Detailed Description

[0067] In a capacitively coupled plasma (CCP) system, an RF voltage signal can be supplied to a showerhead and / or a substrate support (such as an electrostatic chuck or a platen) in a processing chamber to generate and maintain a plasma (such as the plasma provided during an etching or deposition process) during substrate processing. For example, the substrate support can include a plurality of electrodes for receiving an RF voltage. The electrodes can have different sizes and shapes and can be disposed at different positions within the substrate support.

[0068] Examples set forth herein include: (i) a frequency controller for setting and adjusting an RF generator frequency; (ii) a tuning circuit for controlling the RF voltage supplied to the electrodes of the substrate support. The tuning circuit is different from a matching network connected between the RF generator and the tuning circuit. Due to the difference, the tuning circuit is not included in the matching network and is separated from the matching network. The frequency controller adjusts the RF generator frequency to adjust the power distribution within and across the substrate support. The RF generator frequency is adjusted independently of impedance matching and / or minimizing reflected power. The frequency controller adjusts the frequency and effectively adjusts the impedance of the tuning circuit, which affects the power distribution and the processing of the wafer. The disclosed frequency adjustment can be performed without directly changing the variable capacitance and inductance values of the circuit components included in the tuning circuit, or the disclosed frequency adjustment can be performed in addition to directly adjusting the capacitance and inductance values of the circuit components. In one embodiment, the change in the RF generator frequency falls within a predetermined frequency range in which no impedance mismatch occurs between the RF generator and the matching network. In another embodiment, the change in the RF generator frequency falls within an operating frequency range that causes one or more impedance mismatches between the RF generator and the matching network. In this latter embodiment, the matching network is configured to actively maintain impedance matching within the operating frequency range of the RF generator.

[0069] Adjusting the RF generator frequency to adjust the impedance of the tuning circuit and thereby change the power distribution in the substrate support is different from adjusting the frequency of the RF generator for the purpose of impedance matching. The frequency of the RF generator can be adjusted to change the impedance of the matching network to match the impedance of the output of the RF generator. This is achieved without changing the power distribution in the substrate support and / or the wafer uniformity. In contrast, the RF generator frequency can be adjusted to adjust the power distribution and the processing on the wafer to provide or change the wafer uniformity.

[0070] The tuning circuit includes variable and / or fixed impedances that can be tuned for the substrate processing being performed. The RF voltage and corresponding current supplied to the electrodes can be controlled to vary aspects of the generated plasma. During processing, the substrate is placed on a substrate support and one or more layers of the substrate (such as thin film layers) can be etched or deposited, for example. By customizing the RF voltages supplied to different electrodes, the parameters of one or more layers can be spatially varied and / or tuned across the wafer depending on the position of the electrodes. For example, the parameters of one or more layers can include uniformity values, stress values, refractive index, etch rate, deposition rate, thickness values, and / or other measured quantity intrinsic property values.

[0071] The disclosed RF power is provided by one or more RF power supplies. In one embodiment, RF power is provided by feeding a common node RF power from a single RF power supply. The RF power provided from the common node is then provided to a plurality of different electrodes of the substrate support through respective paths. The paths include tuning circuits and / or impedances that can vary the corresponding RF voltage, current level, phase, and / or frequency content. The impedance can include impedances connected in series or parallel. Other embodiments disclosed herein include multiple power supplies, multiple nodes, and various paths.

[0072] The RF voltage and current levels supplied to the plurality of electrodes in the substrate support can also be varied by adjusting the size, shape, and pattern of the plurality of electrodes. For example, by changing the radius of the electrode, the RF voltage supplied to the plasma from the annular and / or circular electrode, the substrate processing performed using the annular and / or circular electrode, and / or the resulting substrate characteristics can be varied and / or tuned.

[0073] The substrate processing system can have a plurality of features, characteristics, and / or parameters that provide degrees of freedom that can be set and / or adjusted to control the resulting aspects of the film layers of the substrate during substrate processing. For example, the RF power level, chamber geometry features, use of a focus ring, showerhead hole pattern, showerhead shape, electrode pattern, gas pressure, gas composition, etc. can be set and / or controlled to provide a resulting substrate with a target film layer composition and profile.

[0074] The disclosed examples provide another degree of freedom for tuning one or more layers of the substrate. The degree of freedom is provided by setting and / or adjusting the impedance of the tuning circuit (such as selecting, changing, and / or controlling capacitance, inductance, reactance, resistance, layout, etc.). Profile refers to the above parameters of one or more layers.

[0075] For example, the radial profile of a substrate can be changed by varying a metal or dielectric annular element near the peripheral edge of the substrate. This can include adjusting parameters such as gas pressure, gas flow rate, gas composition, RF power released, the frequency of the RF signal provided to the electrodes of the substrate support, and / or other parameters. Changing these parameters at a specific location to provide a target layer feature (such as a specific layer thickness or shape at the peripheral edge) can change other parameters at the same location and / or other locations and / or affect other features. Thus, these parameters do not independently adjust certain features. As another example, the peripheral edge of the substrate can be changed by using a focusing ring outside the peripheral edge of the substrate. However, using a focusing ring can affect the gas flow rate at the center of the substrate, which can affect the processing and thus the results at the center of the substrate. Other exemplary layer features are specific trench depths or widths, distances between trenches, distances between conductive elements, layer composition, etc.

[0076] The more parameters and degrees of freedom there are in the setting and control tuning of the profile of one or more layers of a substrate, the more likely it is to provide a specific feature without negatively affecting other features. In addition, as the number of parameters and degrees of freedom increases, the number, composition, and layout (or pattern) of features that can be formed increase. The examples disclosed herein increase the flexibility of substrate film layer design and the selectivity of location-specific design, and enable a substrate processing system to provide a diverse set of features.

[0077] Figure 1 A substrate processing system 100 including an ESC (or substrate support) 101 is shown. The ESC refers to a substrate support including a clamping electrode to which a voltage is supplied to generate an attractive force to clamp the substrate onto the ESC. The ESC 101 can be configured to be the same as or similar to any ESC disclosed herein. Although Figure 1 a capacitively coupled plasma (CCP) system is shown, the embodiments disclosed herein can be applied to transformer coupled plasma (TCP) systems, electron cyclotron resonance (ECR) plasma systems, inductively coupled plasma (ICP) systems, and / or other systems and plasma sources including a substrate support. The embodiments can be applied to PVD processing, PECVD processing, chemically enhanced plasma vapor deposition (CEPVD) processing, ion implantation processing, plasma etching processing, and / or other etching, deposition, and cleaning processes.

[0078] The ESC 101 can include a top plate 102 and a bottom plate 103. Although the ESC 101 is shown as having two plates, the ESC 101 can include a single plate. The plates 102, 103 can be formed of ceramic and / or other materials. Although Figures 1-5 each ESC in FIGS. 7 - 11 is shown as having specific features and not having other features, each ESC can be modified to include the features disclosed herein andFigures 1-5 and any features in 7-11.

[0079] Although the ESC 101 is shown as being installed at the bottom of the processing chamber and not configured to rotate, the ESC 101 and other ESCs disclosed herein can be installed at the bottom or top of the processing chamber and configured as a rotating chuck to rotate during substrate processing. If installed at the top of the processing chamber, the ESC 101 can have a similar construction to other ESCs disclosed herein but be flipped upside down and can include peripheral substrate support, clamping, and / or fastening hardware.

[0080] The substrate processing system 100 includes a processing chamber 104. The ESC 101 is enclosed within the processing chamber 104. The processing chamber 104 also surrounds other components, such as the upper electrode 105, and houses RF plasma. During operation, the substrate 107 is placed on and electrostatically clamped to the top plate 102 of the ESC 101.

[0081] By way of example only, the upper electrode 105 can include a showerhead 109 that introduces and disperses gas. The showerhead 109 can include a stem 111, one end of which is connected to the upper surface of the processing chamber 104. The showerhead 109 is generally cylindrical and extends radially outward from the opposite end of the stem 111 at a position separated from the upper surface of the processing chamber 104. The surface of the showerhead 109 facing the substrate includes a plurality of holes through which process gas or purge gas flows. Alternatively, the upper electrode 105 can include a conductive plate and can direct gas in other ways. One or both of the plates 102, 103 can be used as a lower electrode.

[0082] One or both of the plates 102, 103 can include a temperature control element (TCE). For example, Figure 1 The top plate 102 including the TCE 110 and that can be used as a heating plate is shown. An intermediate layer 114 is disposed between the plates 102, 103. The intermediate layer 114 can bond the top plate 102 to the bottom plate 103. For example, the intermediate layer can be formed of an adhesive material suitable for bonding the top plate 102 to the bottom plate 103. The bottom plate 103 can include one or more gas channels 115 and / or one or more coolant channels 116 for allowing backside gas to flow to the backside of the substrate 107 and for allowing coolant to flow through the bottom plate 103.

[0083] The RF generation system 120 generates an RF voltage and outputs the RF voltage to the upper electrode 105 and the lower electrode (such as one or more of the plates 102, 103). One of the upper electrode 105 and the ESC 101 can be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 120 can be controlled by the system controller 121 and includes one or more RF generators 122 (such as capacitive coupled plasma RF power generators, bias power generators, and / or other RF power generators) capable of generating an RF voltage, and the generated RF voltage is fed to the upper electrode 105 and / or the ESC 101 through one or more matching and distribution networks 124. The system controller 121 includes a frequency controller 119 that sets and adjusts the frequency of the RF signals output from the RF generators 123, 125. The frequency can be adjusted to adjust the power distribution within and across the ESC 101.

[0084] For example, a first RF generator 123, a second RF generator 125, a first RF matching network 127, and a second RF matching network 129 are shown. The first RF generator 123 and the first RF matching network 127 can provide an RF voltage or can simply connect the showerhead 109 to a ground reference potential. The second RF generator 125 and the second RF matching network 129 can be referred to individually or collectively as a power supply and provide an RF / bias voltage to the ESC 101. In one embodiment, the first RF generator 123 and the first RF matching network 127 provide the power to ionize the gas and drive the plasma. In another embodiment, the second RF generator 125 and the second RF matching network 129 provide the power to ionize the gas and drive the plasma. One of the RF generators 123, 125 can be a high-power RF generator that generates a power of, for example, 6 - 10 kilowatts (kW) or higher.

[0085] The second RF matching network 129 provides impedance matching to match the input impedance of the second RF matching network 129 with the output impedance of the second RF generator 125. The second RF matching network 129 can (i) maintain fixed capacitance values and inductance values of the circuit components (such as capacitors and inductors) of the second RF matching network 129 to provide impedance matching within the operating frequency range of the RF generator 125; or (ii) adjust the capacitance values and / or inductance values of the impedance 128 of the matching network 129 to maintain impedance matching for the operating frequency range of the RF generator 125. This is done to minimize the reflected power that is reflected back to the RF generator 125. The second impedance matching network 129 provides impedance matching that is independent of the frequency of the RF signal output from the second RF generator 125. The second RF matching network 129 includes impedances (such as capacitors and inductors) 128 and supplies power to the RF electrodes, such as the RF electrodes 131, 133 in the plates 102, 103. The RF electrodes can be located in one or both of the plates 102, 103. The location of the RF electrodes can be near the upper surface of the ESC 101 (for example when the ESC 101 is used as a clamping electrode) and / or in other locations within the ESC 101 (for example when the ESC 101 is used for RF biasing purposes). Some of the electrodes can be used as both clamping electrodes and RF biasing electrodes.

[0086] The RF electrodes can receive power from other power sources. For example, some of the RF electrodes can receive power from the power source 135 instead of from the second RF matching network 129, or some of the RF electrodes can receive power from the power source 135 in addition to receiving power from the second RF matching network 129. In some embodiments, the power source 135 does not include a matching network and / or there is no matching network disposed between the power source 135 and the RF electrodes. Some of the RF electrodes can receive power from the second RF matching network 129 and / or the power source 135 to electrostatically clamp the substrate to the top plate 102. The power source 135 can be controlled by the system controller 121. The tuning circuit 139 can be connected between (i) the second RF matching network 129 and the corresponding electrode among the plurality of electrodes 131, 133, 137, and (ii) the power source 135 and the corresponding electrode among the plurality of electrodes 131, 133, 137. In one embodiment, the tuning circuit 139 is disposed outside the processing chamber 104, separated from and downstream of the second RF matching network 129. An example of the tuning circuit 139 is shown in Figures 2-11 in.

[0087] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, …, and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas sources 132 supply one or more precursors and their mixtures. The gas sources 132 may also supply etch gases, carrier gases, and / or purge gases. Evaporated precursors may also be used. The gas sources 132 are connected to the manifold 140 via valves 134-1, 134-2, …, and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, …, and 136-N (collectively referred to as mass flow controllers 136). The output of the manifold 140 is fed to the processing chamber 104. By way of example only, the output of the manifold 140 is fed to the showerhead 109.

[0088] The substrate processing system 100 further includes a cooling system 141 that includes a temperature controller 142 connected to the TCE 110. In one embodiment, the TCE 110 is not included. Although shown separate from the system controller 121, the temperature controller 142 may be implemented as part of the system controller 121. One or more of the plates 102, 103 may include multiple temperature control zones (e.g., 4 zones, each zone including 4 temperature sensors).

[0089] The temperature controller 142 can control the operation, and thus control the temperature of the TCE 110, to control the temperature of the control boards 102, 103, and the substrate (such as substrate 107). The temperature controller 142 and / or the system controller 121 can control the flow rate of the backside gas (such as helium) flowing into the gas channel 115 for cooling the substrate by controlling the airflow flowing from one or more of the gas sources 132 to the gas channel 115. The temperature controller 142 can also communicate with the coolant assembly 146 to control the flow of the first coolant through the channel 116 (the pressure and flow rate of the cooling fluid). The first coolant assembly 146 can receive the cooling fluid from a reservoir (not shown). For example, the coolant assembly 146 can include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to cause the coolant to flow through the channel 116 to cool the bottom plate 103. The temperature controller 142 can control the flow rate and temperature of the coolant. Based on the parameters detected by the sensors 143, 144 in the processing chamber 104, the temperature controller 142 controls the current supplied to the TCE 110 and the pressure and flow rate of the gas and / or coolant supplied to the channels 115, 116. The sensors 143, 144 can include resistive temperature devices, thermocouples, digital temperature sensors, temperature probes, and / or other suitable temperature sensors. Parameters such as temperature, gas pressure, voltage, current level, etc. can be detected using the sensors 143, 144 and / or other sensors included in the substrate processing system 100. During the etching process, the substrate 107 can be heated to a predetermined temperature (such as 120 degrees Celsius (°C)) in the presence of a high-power plasma. The gas and / or coolant flow flowing through the channels 115, 116 reduces the temperature of the bottom plate 103, thereby reducing the temperature of the substrate 107 (such as cooling from 120 °C to 80 °C).

[0090] The valve 156 and the pump 158 can be used to discharge reactants from the processing chamber 104. The system controller 121 can control the components of the substrate processing system 100, including controlling the level of RF power supplied, the pressure and flow rate of the gas supplied, RF matching, etc. The system controller 121 controls the states of the valve 156 and the pump 158. The manipulator 170 can be used to transfer the substrate to the ESC 101 and remove it from the ESC 101. For example, the manipulator 170 can transfer the substrate between the ESC 101 and the load lock 172. The manipulator 170 can be controlled by the system controller 121. The system controller 121 can control the operation of the load lock 172.

[0091] Valves, gas and / or coolant pumps, power supplies, RF generators, etc. can be referred to as actuators. TCEs, gas channels, coolant channels, etc. can be referred to as temperature adjustment elements.

[0092] The system controller 121 can directly control the impedance state of the tuning circuit 139 by adjusting the variable capacitance value and / or inductance value of the circuit components of the tuning circuit 139 or indirectly through the frequency controller 119. The frequency controller 119 can control and / or instruct the RF generator 125 to output an RF signal with a predetermined frequency to adjust the impedance of the tuning circuit 139. The system controller 121 can send a signal to the tuning circuit 139 to directly adjust the impedance of the tuning circuit 139 by adjusting the capacitance value and / or inductance value of the capacitors and inductors of the tuning circuit 139, to replace adjusting the said frequency or as a supplement to adjusting the said frequency. Examples of the capacitors and inductors are shown in Figures 7-11 . The impedance of the tuning circuit 139 can be adjusted based on feedback signals received from one or more of the sensors 143, 144, 145 and / or other sensors of the ESC 101, the processing chamber 104, the second RF matching network 129, and / or the power supplies 125, 135. The sensor 145 can detect the voltage, current level, and power level in the second RF matching network 129. Although the sensor 144 is shown in the bottom plate 103, one or more of the sensors can be located in the top plate 102. The sensor 144 can be located at any position in the ESC 101. The sensor 143 can be located at any position in the processing chamber 104.

[0093] The system controller 121 can also control the state of the impedance 128. The state of the impedance 128 can be set so that one or more impedances of one or more outputs of the second RF matching network 129 match the impedance encountered at the input of the tuning circuit 139. The impedance encountered at the input of the tuning circuit 139 is based on the impedance of the ESC 101 and the tuning circuit 139. When adjusting the impedance of the tuning circuit 139, the system controller 121 can also adjust the impedance of the second RF matching network 129 accordingly.

[0094] Although a specific number of tuning circuits, impedances, clamping electrodes, RF electrodes, and / or other components are shown in the following Figures 2-11 description, any number of each can be included. Additionally, although a specific arrangement of the tuning circuits, impedances, clamping electrodes, and RF electrodes is shown and they have specific dimensions, shapes, and patterns, the said components can be arranged in different ways and have different dimensions, shapes, and patterns.

[0095] Figure 2Shows a capacitive coupling circuit 200, which includes a chuck tuning circuit 202, an RF tuning circuit 204, a chuck electrode 206, and an RF electrode 208. The impedance of the components (such as capacitors and / or inductors) of the tuning circuits 202, 204 can be frequency-dependent. Shows a cross-sectional view of the showerhead (or upper electrode) 210 and the ESC 212. The showerhead 210 can be connected to a reference potential or ground 214. In one embodiment, the showerhead 210 is supplied with RF power by Figure 1 the first RF matching network 127. A plasma 216 is provided between the showerhead 210 and the ESC 212. The substrate 218 is placed on the ESC 212.

[0096] The chuck tuning circuit 202 can be used to control the chuck voltage, current level, phase, power level, and / or frequency supplied to the chuck electrode 206. The RF tuning circuit 204 can be used to control the bias voltage, current level, power level, and / or frequency supplied to the RF electrode 208. The tuning circuits 202, 204 can receive power P Figure 1 from, for example, Figure 1 the second RF matching network 129 (or the first power supply), and / or 内 P 外 and are used to adjust the voltage drop across the plasma. This can include adjusting the voltage difference between pairs of points above the surface of the ESC 101 across Figure 1 . Figure 6 Shows examples of the tuning circuits 202, 204. As Figure 6 shown, the tuning circuits 202, 204 can include one or more of the impedances. The tuning circuits 202, 204 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of the impedances that can be included in the tuning circuits 202, 204 are shown in Figures 7-11 . The impedance can be connected in series or parallel, can be a shunt reactance, and / or can include capacitors, inductors, resistors, reactances, transmission lines, shorted or open circuits, filtering elements (or filters), and / or other impedances. For example, the chuck electrode 206 can be circular and the RF electrode 206 can be annular.

[0097] Figure 3Shows a capacitive coupling circuit 300, which includes a first clamping tuning circuit 302, a second clamping tuning circuit 303, an external RF tuning circuit 304, a first clamping electrode 306, a second clamping electrode 307, and an RF electrode 308. The impedance of the components (such as capacitors and / or inductors) of the tuning circuits 302, 303, 304 can be frequency-dependent. A cross-sectional view of a showerhead (or upper electrode) 310 and an ESC 312 is shown. The showerhead 310 can be connected to a reference potential or ground 314. In one embodiment, the showerhead 310 is provided with RF power by Figure 1 the first RF matching network 127. A plasma 316 is provided between the showerhead 310 and the ESC 312. A substrate 318 is placed on the ESC 312.

[0098] The clamping tuning circuits 302, 303 can be used to control the clamping voltage, current level, power level, and / or frequency provided to the clamping electrodes 306, 307. The RF tuning circuit 304 can be used to control the bias voltage, current level, power level, and / or frequency provided to the RF electrode 308. The tuning circuits 302, 303, 304 can receive power P from, for example Figure 1 the second RF matching network 129 (or the first power supply), Figure 1 the power supply 135 (or the second power supply), and / or from one or more other power supplies. 夹持1 P 夹持2 and P 外 The tuning circuits 302, 303, 304 can be used to adjust the voltage drop across the plasma. In one embodiment, P 夹持1 is equal to P 夹持2 . Figure 6 Examples of the tuning circuits 302, 303, 304 are shown. As Figure 6 shown, the tuning circuits 302, 303, 304 can include one or more of the impedances. The tuning circuits 302, 303, 304 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of the impedances that can be included in the tuning circuits 302, 303, 304 are shown in Figures 7-11 . The impedances can be connected in series or in parallel, can be shunt reactances, and / or can include capacitors, inductors, resistors, reactances, transmission lines, short-circuited or open-circuited circuits, filtering elements, and / or other impedances. For example, the clamping electrodes 306, 307 can be circular, while the RF electrode 308 can be annular.

[0099] Figure 4Shows a capacitive coupling circuit 400, which includes a chuck tuning circuit 402, an inner RF tuning circuit 404, an outer RF tuning circuit 405, a chuck electrode 406, an inner bias electrode 408, and an outer bias electrode 409. The impedance of the components (such as capacitors and / or inductors) of the tuning circuits 402, 404, 405 can be frequency-dependent. A cross-sectional view of a showerhead (or upper electrode) 410 and an ESC 412 is shown. The showerhead 410 can be connected to a reference potential or ground 414. In one embodiment, the showerhead 410 is supplied with RF power by Figure 1 the first RF matching network 127. A plasma 416 is provided between the showerhead 410 and the ESC 412. A substrate 418 is placed on the ESC 412.

[0100] The chuck tuning circuit 402 can be used to control the chuck voltage, current level, phase, power level, and / or frequency supplied to the chuck electrode 406. The RF tuning circuits 404, 405 can be used to control the bias voltage, current level, power level, and / or frequency supplied to the bias electrodes 408, 409. The tuning circuits 402, 404, 405 can receive power P from, for example Figure 1 the second RF matching network 129 (or the first power supply), Figure 1 the power supply 135 (or the second power supply), and / or from one or more other power supplies 夹持 、P 内 、P 外 . The tuning circuits 402, 404, 405 can be used to adjust the voltage drop across the plasma. Figure 6 Examples of the tuning circuits 402, 404, 405 are shown. As Figure 6 shown, the tuning circuits 402, 404, 405 can include one or more of the impedances. The tuning circuits 402, 404, 405 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of the impedances that can be included in the tuning circuits 402, 404, 405 are shown in Figures 7-11 . The impedances can be connected in series or in parallel, can be shunt reactances, and / or can include capacitors, inductors, resistors, reactances, transmission lines, short-circuited or open-circuited circuits, filtering elements, and / or other impedances. For example, the chuck electrode 406 and the inner bias electrode 408 can be circular, while the outer bias electrode 409 can be annular.

[0101] Figure 5Shows a capacitive coupling circuit 500, which includes a clamping tuning circuit 502, a first internal RF tuning circuit 504, a second internal tuning circuit 505, an external RF tuning circuit 506, a clamping electrode 507, a first internal bias electrode 508, a second internal bias electrode 509, and an external bias electrode 510. The impedance of the components (such as capacitors and / or inductors) of the tuning circuits 502, 504, 505, 506 can be frequency-dependent. A cross-sectional view of a showerhead (or upper electrode) 511 and an ESC 512 is shown. The showerhead 511 can be connected to a reference potential or ground 514. In one embodiment, the showerhead 511 is provided with RF power by Figure 1 the first RF matching network 127. A plasma 516 is provided between the showerhead 511 and the ESC 512. A substrate 518 is placed on the ESC 512.

[0102] The clamping tuning circuit 502 can be used to control the clamping voltage, current level, power level, and / or frequency provided to the clamping electrode 507. The RF tuning circuits 504, 505, 506 can be used to control the bias voltage, current level, phase, power level, and / or frequency provided to the bias electrodes 508, 509, 510. The tuning circuits 502, 504, 505, 506 can receive power P from, for example Figure 1 the second RF matching network 129 (or the first power supply), Figure 1 the power supply 135 (or the second power supply), and / or from one or more other power supplies 夹持 、P 内1 、P 内2 、P 外 . The tuning circuits 502, 504, 505, 506 can be used to adjust the voltage drop across the plasma. Figure 6 Examples of the tuning circuits 502, 504, 505, 506 are shown. As Figure 6 shown, the tuning circuits 502, 504, 505, 506 can include one or more of the impedances. The tuning circuits 502, 504, 505, 506 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of the impedances that can be included in the tuning circuits 502, 504, 505, 506 are shown in Figures 7-11 . The impedances can be connected in series or parallel, can be shunt reactances, and / or can include capacitors, inductors, resistors, reactances, transmission lines, shorted or open circuits, filtering elements, and / or other impedances. For example, the clamping electrode 507 and the bias electrodes 508, 509 can be circular, while the external bias electrode 510 can be annular.

[0103] Figure 6Shows a tuning circuit 600 for an electrode (or load) 602, such as a clamping electrode or a bias electrode. The tuning circuit 600 can replace Figures 2-5 any one of the tuning circuits 202, 204, 302, 304, 305, 402, 404, 405, 502, 504, 505, and 506. An example of the tuning circuit 600 is shown in Figures 9-10 . The tuning circuit 600 can receive RF power from an RF power source 604, such as Figure 1 one of the power sources 129, 135. The RF power source 604 can include a matching network and / or an RF generator, such as the matching network 129 and the RF generator 125. The tuning circuit 600 can include a series impedance path 605 and a series impedance group 606, as well as a parallel impedance path 607 and a parallel impedance group 608. The impedances of the impedance groups 606, 608 can be frequency-dependent. The series impedance group 606 includes one or more impedances 609 connected in series between the RF power source 604 and the load 602. The series impedance group 606 and the one or more impedances 609 are connected between the load 602 and the source terminal 610. The source terminal 610 is connected to the RF power source 604. The parallel impedance group 608 is connected between (i) the source terminal 610 connected between the RF power source 604 and the series impedance group 606 and (ii) a reference terminal or ground 612. The parallel impedance group 608 can include one or more impedances 613 connected in parallel between the source terminal 610 and the reference terminal 612.

[0104] One or more of the impedances 609, 613 can be fixed impedances. Additionally or alternatively, one or more of the impedances 609, 613 can be variable impedances, and the variable impedances can be adjusted by Figure 1 the system controller 121 based on, for example, the following: a current processing recipe; current operating parameters; measured parameters, and / or parameters determined based on the output of one or more sensors, such as Figure 1 the sensor 143; and / or the characteristics and / or properties of the processing system, ESC, and substrate.

[0105] Although certain impedances are shown in the following Figures 7-11 , other impedances can be included. The impedances can include "stray" inductance from wires and / or other conductive circuit elements.

[0106] Figure 7 Shows that the tuning circuit 700 can be connected to a single RF power source 702. The tuning circuit 700 includes inductors L1 - L3 and capacitors C1 - C3 connected in series for two clamping electrodes 706, 708 and a bias electrode ring 710. The impedances of the inductors L1 - L3 and the capacitors C1 - C3 are frequency-dependent. The RF power source 702 can be similar to Figure 1operate in the manner of power supplies 129, 135 and can be connected to a reference terminal or ground 711. The RF power supply 702 can include a matching network and / or an RF generator, such as matching network 129 and RF generator 125. In one embodiment (referred to as a grounded platform configuration), the RF power supply 702 is not included, and capacitors C1 - C3 are connected to ground 711.

[0107] In Figure 7 a cross-sectional view of a plurality of electrodes 706, 708, 710 is shown. The plurality of electrodes 706, 708, 710 can be concentrically arranged. L1 and C1 are connected in series between (i) the RF power supply 702 and the common terminal 712 and (ii) the first inner clamping electrode 706. L2 and C2 are connected in series between (i) the RF power supply 702 and the common (or source) terminal 712 and (ii) the central terminal 714, and the central terminal 714 is connected to two points on the bias electrode ring 710. L3 and C3 are connected in series between (i) the RF power supply 702 and the common terminal 712 and (ii) the second inner clamping electrode 708.

[0108] The inductors L1 - L3 and the capacitors C1 - C3 can have fixed values or can be variable devices controlled by the Figure 1 system controller 121 as described above. Although the inductors L1 - L3 and the capacitors C1 - C3 are shown, other impedances can be included in the tuning circuit 700.

[0109] Figure 7 Examples are provided where power is supplied to a common node (or terminal) and split to supply power to a plurality of electrodes. The impedance of each path for each electrode can be changed by the impedance (or the series-connected inductance and capacitance) in the corresponding path.

[0110] Figure 8 It is shown that the tuning circuit 800 can be connected to a single RF power supply 802. The tuning circuit 800 includes shunt inductors L1 - L3 and shunt capacitors C1 - C3 for two clamping electrodes 804, 806 and a bias electrode ring 808. The impedance of the shunt inductors L1 - L3 and the shunt capacitors C1 - C3 is frequency-dependent. The RF power supply 802 can operate in the manner of Figure 1 the power supplies 129, 135 and can be connected to a reference terminal or ground 811. The RF power supply 802 can include a matching network and / or an RF generator, such as matching network 129 and RF generator 125. The RF power supply 802 is connected to the common (or source) terminal 812, and the common (or source) terminal 812 is connected to the clamping electrodes 804, 806 and to the central terminal 814.

[0111] In one embodiment (referred to as the grounded platform configuration), the RF power supply 802 is not included and the terminal 812 is connected to ground 811. When the terminal 812 is connected to ground 811, one or more serially connected impedances can be connected between (i) node 820 and ground 811, (ii) node 822 and ground 811, and / or node 824 and ground 811. The one or more serially connected impedances can be similar to the impedances L1 - L3 and C1 - C3, or can include other impedances. This can occur, for example, when RF power is supplied to the corresponding nozzles.

[0112] A cross-sectional view of the electrodes 804, 806, 808 is shown. The electrodes 804, 806, 808 can be concentrically arranged. L1 and C1 are connected in parallel between the node (or first terminal) 820 and ground 811. The first terminal 820 is connected between the common terminal 812 and the first clamping electrode 804. L2 and C2 are connected in parallel between the node (or second terminal) 822 and ground 811. The second terminal 822 is connected between the common terminal 812 and the first clamping electrode 804. L3 and C3 are connected in parallel between the node (or third terminal) 824 and ground 811. The third terminal 824 is connected between the common terminal 812 and the second clamping electrode 806.

[0113] The inductors L1 - L3 and capacitors C1 - C3 can have any and / or predetermined fixed values, or can be variable devices controlled by the system controller 121 as described above. Although the inductors L1 - L3 and capacitors C1 - C3 are shown, other impedances can be included in the tuning circuit 800. Figure 1 The inductors L1 - L3 and capacitors C1 - C3 can have any and / or predetermined fixed values, or can be variable devices controlled by the system controller 121 as described above. Although the inductors L1 - L3 and capacitors C1 - C3 are shown, other impedances can be included in the tuning circuit 800.

[0114] Figure 8 Power is provided to the common node and split to provide power to multiple electrodes. The impedance of each path for each electrode can be changed by the shunt impedance (or shunt inductance and capacitance) connected to the corresponding path.

[0115] Figure 9 A tuning circuit 900 connected to dual RF power supplies 902, 904 is shown. The tuning circuit 900 includes serially connected inductors L1 - L3 and capacitors C1 - C3 and shunt inductors L4 - L6 and capacitors C4 - C6 for two clamping electrodes 906, 908 and a bias electrode ring 910. The impedances of the inductors L1 - L6 and capacitors C1 - C6 are frequency-dependent. The RF power supplies 902, 904 can be in a similar manner to Figure 1operate in the manner of power supplies 129, 135 and can be connected to a reference terminal or ground 911. The RF power supplies 902, 904 can include matching networks and / or RF generators, such as matching network 129 and RF generator 125. The RF power supplies 902, 904 are connected to a common (or source) terminal 912 and can provide power at the same frequency or different frequencies.

[0116] In one embodiment (referred to as a ground platform configuration), the RF power supplies 902, 904 are not included, and the terminal 912 is connected to ground 911. When the terminal 912 is connected to ground 911, one or more serially connected impedances can be connected between (i) node 920 and ground 911, (ii) node 922 and ground 911, and / or node 924 and ground 911. The one or more serially connected impedances can be similar to impedances L1 - L3 and C1 - C3, or can include other impedances. This can occur, for example, when RF power is provided to the corresponding nozzle.

[0117] Inductor L1 and capacitor C1 are serially connected between the common terminal 912 and the first clamping electrode 906. Inductor L2 and capacitor C2 are serially connected between the central terminal 914 and the common terminal 912. The central terminal is connected to two points on the bias electrode ring 910.

[0118] A cross-sectional view of a plurality of electrodes 906, 908, 910 is shown. The plurality of electrodes 906, 908, 910 can be concentrically arranged. L4 and C4 are connected in parallel between node (or first terminal) 920 and ground 911. The first terminal 920 is connected between capacitor C1 and the common terminal 912. L5 and C5 are connected in parallel between node (or second terminal) 922 and ground 911. The second terminal 922 is connected between capacitor C2 and the common terminal 912. L6 and C6 are connected in parallel between node (or third terminal) 924 and ground 911. The third terminal 924 is connected between capacitor C3 and the common terminal 912.

[0119] The inductors L1 - L6 and capacitors C1 - C6 can have arbitrary and / or predetermined fixed values or can be variable devices controlled by the Figure 1 system controller 121 as described above. Although the inductors L1 - L6 and capacitors C1 - C6 are shown, the tuning circuit 900 can include other impedances. L4 - L6 and C4 - C6 can be any network, which may not include inductors and / or capacitors.

[0120] Figure 10Shows that two tuning circuits 1000, 1002 can be connected to corresponding RF power supplies 1004, 1006. The first tuning circuit 1000 includes inductors L1, L3 and capacitors C1, C3 connected in series for two clamping electrodes 1010, 1012, and shunt inductors L4, L6 and capacitors C4, C6. The impedances of inductors L1 - L6 and capacitors C1 - C6 are frequency - dependent. The second tuning circuit 1002 includes an inductor L2 and a capacitor C2 connected in series for a bias electrode ring 1014, and a shunt inductor L5 and a capacitor C5. The RF power supplies 1004, 1006 can operate in a manner similar to Figure 1 the power supplies 129, 135 and can be connected to a reference terminal or ground 1016. The RF power supplies 1004, 1006 can include a matching network and / or an RF generator, such as matching network 129 and RF generator 125. The RF power supply 1004 is connected to a common (or source) terminal 1018, and the common (or source) terminal 1018 is connected to C1, C3, C4, C6, L4, L6. The RF power supply 1006 is connected to a central terminal 1020 through C2 and L2. The RF power supplies 1004, 1006 can provide power at the same frequency or different frequencies.

[0121] The inductor L1 and the capacitor C1 are connected in series between the common terminal 1018 and the first clamping electrode 1010. The inductor L2 and the capacitor C2 are connected in series between the central terminal 1020 and the RF power supply 1006. The central terminal 1020 is connected to two points on the bias electrode ring 1014.

[0122] Shows a cross - sectional view of a plurality of electrodes 1010, 1012, 1014. The electrodes 1010, 1012, 1014 can be concentrically arranged. L4 and C4 are connected in parallel between the first terminal 1030 and the ground 1016. The first terminal 1030 is connected between the capacitor C1 and the common terminal 1018. L5 and C5 are connected in parallel between the second terminal 1032 and the ground 1016. The second terminal 1032 is connected between the capacitor C2 and the common terminal 1018. L6 and C6 are connected in parallel between the third terminal 1034 and the ground 1016. The third terminal 1034 is connected between the capacitor C3 and the common terminal 1018.

[0123] The inductors L1 - L6 and the capacitors C1 - C6 can have arbitrary and / or predetermined fixed values or can be variable devices controlled by a Figure 1 system controller 121 as described above. Although the inductors L1 - L6 and the capacitors C1 - C6 are shown, other impedances can be included in the tuning circuit 1000. L4 - L6 and C4 - C6 can be any network, which may not include inductors and / or capacitors.

[0124] In one embodiment, RF power supply 1004 is not included, and terminal 1018 is connected to ground 1016. In another embodiment, RF power supply 1006 is not included, and terminal 1032 is connected to ground 1016. In yet another embodiment, neither RF power supply 1004 nor 1006 is included, and both terminals 1018 and 1032 are connected to ground 1016. When terminal 1018 and / or terminal 1032 is connected to ground 1016, one or more serially connected impedances may be connected between (i) node 1030 and ground 1016, (ii) node 1034 and ground 1016, and / or between node 1032 and ground 1016. The one or more serially connected impedances may be similar to impedances L1 - L3 and C1 - C3, or may include other impedances. This may occur, for example, when RF power is provided to a corresponding nozzle.

[0125] Figure 11 Tuning circuit 1100 is shown, which includes capacitors C1, C2 and inductors L1, L2 for the parallel connection of two clamping electrodes 1102, 1104 and bias electrode ring 1106. The impedances of capacitors C1 - C2 and inductors L1 - L2 are frequency - dependent. Electrodes 1102, 1104, 1106 may be concentrically arranged. Capacitors C1 and C2 are serially connected between (i) clamping electrodes 1102, 1104 and (ii) power terminals 1110, 1112. Inductors L1, L2 are respectively connected in parallel with capacitors C1, C2 and serially connected between (i) clamping electrodes 1102, 1104 and (ii) power terminals 1110, 1112. Central terminals 1114, 1116 are respectively connected between capacitors C1, C2 and between inductors L1, L2. Central terminals 1114, 1116 are connected to the following two: (i) two points on bias electrode ring 1106 and (ii) a third (or central) power terminal 1118. Power terminals 1110, 1112 are respectively connected to clamping electrodes 1102, 1104. Power terminals 1110, 1112, 1118 may be connected to respective power supplies, such as any power supply disclosed herein. In one embodiment, one or more of power terminals 1110, 1112, 1118 are not connected to an RF power supply but are connected to a reference terminal or ground.

[0126] Inductors L1 - L2 and capacitors C1 - C2 may have any and / or predetermined fixed values or may be variable devices controlled by system controller 121 as described above. Figure 1 Although inductors L1 - L2 and capacitors C1 - C2 are shown, other impedances may be included in tuning circuit 1100. Inductors L1 - L2 and capacitors C1 - C2 are coupling elements connected between the electrodes, providing power at multiple frequencies to each electrode.

[0127] The tuning circuit 1100 can be used in conjunction with Figure 3 、 5 any of the circuits shown in FIGS. 7 - 10. For example, capacitors C1, C2 and inductors L1, L2 can be similarly connected to: Figure 3 electrodes 306, 307 and electrode ring 308 of Figure 5 electrodes 508, 509 and electrode ring 510 of Figure 7 electrodes 706, 708 and electrode ring 710 of Figure 8 electrodes 804, 806 and electrode ring 808 of Figure 9 electrodes 906, 908 and electrode ring 910 of Figure 10 electrodes 1010, 1012 and electrode ring 1014 of

[0128] In Figures 2-11 the above examples of Figures 9-10 if power at multiple frequencies is provided, the path to a particular electrode can include frequency - dependent filtering elements to provide power at a specific frequency to that electrode. The above - mentioned impedance can include frequency - dependent filtering elements. Additionally, the power provided to different electrodes can be provided by separate (or different) power supplies operating at the same frequency or different frequencies, such that the power provided by the power supplies has the same frequency or different frequencies.

[0129] Figure 12 FIG. shows an example of an operating method of a substrate processing system, which includes setting and adjusting the capacitance value and inductance value of a tuning circuit for electrodes of an electrostatic chuck. In one embodiment, when adjusting one or more frequencies to adjust the spatial power distribution of an entire ESC (e.g., Figure 1 ESC 101 of Figures 1-11 ), the capacitors and inductors of the tuning circuit are maintained at fixed values. Spatial power distribution refers to the distribution of power of the entire ESC. This distribution can include distributions in the lateral, radial, axial, vertical, azimuthal, etc. directions. Although the following operations are mainly described for the Figure 1 embodiment of

[0130] The method can start at 1200. At 1202, the process to be performed is selected. Exemplary processes are cleaning processes, etching processes, deposition processes, annealing processes, etc. At 1204, a recipe including system operation parameters is determined for the selected process to be performed. Exemplary system operation parameters are: gas pressure and flow rate; the temperature of the process chamber, ESC, and substrate; the central frequency of the RF signal output from the RF generator and the corresponding frequency operation range; the total power of each group of one or more electrodes in each of the multiple regions supplied to the electrodes; the RF bias voltage; the clamping voltage; the electrode voltage, current level, power level, and / or frequency, etc. For example, the frequency operation range can be ±5% or more different from the central frequency. For example, the RF generator can have a central frequency of 13.56 megahertz (MHz) and can adjust the frequency of the RF signal output from the RF generator during the process to be between 12.882 MHz - 14.238 MHz. Again, for example, the RF generator can have a central frequency of 20 MHz and can adjust the frequency of the RF signal output from the RF generator during the process to be between 18 MHz - 22 MHz. The frequency adjustment is not performed for the purpose of impedance matching to minimize reflected power, but is performed during the process, for example, after plasma excitation, to adjust the power distribution in the ESC.

[0131] At 1206, the characteristics and / or properties of the process chamber, ESC, and substrate are determined. Exemplary characteristics and properties are process chamber geometry values, the composition of the ESC, the heating and cooling characteristics of the ESC (such as heating and cooling rates), the size of the ESC, the composition of the substrate, the materials of the ESC and / or substrate, etc. This can also include: the number of electrodes in each region: the number of clamping electrodes, RF electrodes, and / or the combined clamping electrodes and RF electrodes. Some electrodes in the ESC 101 can be used for both clamping and RF biasing purposes, and thus can be provided with both the clamping voltage and the RF bias voltage.

[0132] At 1208, the system controller 121 and / or the frequency controller 119 can set the system operation parameters. This can include controlling the operation of the above-mentioned actuators. At 1210, the impedance value of the tuning circuit is set based on the selected process, recipe, and system operation parameters. The impedance value can also be set based on the characteristics and / or properties of the process chamber, ESC, and / or substrate, or the impedance value can alternatively be set based on the characteristics and / or properties of the process chamber, ESC, and / or substrate. For example, a look-up table can be stored in and / or accessed by the memory of the system controller 121 to associate the impedance value with the other parameters, characteristics, and / or properties described therein. As described above, the system controller 121 can also set the impedance 128 of the second RF matching network 129.

[0133] At 1212, a substrate can be placed on an ESC. This can include providing a clamping voltage to clamp the substrate to the ESC. At 1214, a processing operation is performed. Exemplary processing operations are cleaning operations, gas flow, plasma flow and excitation, etching operations, deposition operations, annealing operations, post-annealing operations, purging the processing chamber, etc.

[0134] Operations 1216, 1218, 1220, and 1222 can be performed while operation 1212 is being carried out. At 1216, the sensor output signal is monitored, and the sensor output signal includes sensor output data of the substrate processing system. This can include receiving signals from Figure 1 sensors 143, 144, and 145.

[0135] At 1218, parameters can be determined based on the sensor output signals, data, and / or corresponding measurement values from sensors 143, 144, 145 and / or other sensors, such as temperature, gas pressure, the frequency of the RF signal generated by the RF generator, voltage, current level, power level, etc. The frequency can be adjusted while applying the same total amount of power to the RF and / or clamping electrodes. For example and with reference to Figure 7 , the RF power supply 702 can provide an RF signal with a specific frequency to electrodes 706, 708, and 710 through L1 - L3 and C1 - C3.

[0136] The power distribution allocated to electrodes 706, 708, and 710 depends on the frequency and the impedance values of L1 - L3 and C1 - C3. The frequency of the RF signal can be adjusted to adjust the power distribution. By adjusting the frequency, the effective impedance of L1 - L3 and C1 - C3 changes. The inductance values and capacitance values of L1 - L3 and C1 - C3 can be fixed or adjustable to adjust the power distribution. The amount of power allocated to electrodes 706, 708, and 710 can be the same or different, depending on the frequency of the RF signal and the impedance values of L1 - L3 and C1 - C3. In one embodiment, when changing the frequency and / or impedance value, inductance value, and / or capacitance value of the RF signal supplied to the tuning circuit, the total amount of power supplied to electrodes 706, 708, and 710 is maintained at a fixed level.

[0137] At 1220, the system controller 121 and / or the frequency controller 119 may determine whether to adjust the frequency of the RF generation signal, the impedance value of the tuning circuit, and / or the capacitance value and inductance value of the tuning circuit based on the measured values and / or the determined parameters. In one embodiment, a target impedance value is determined, and then the frequency is set based on the target impedance value. The capacitance value and inductance value of the capacitors and inductors of the tuning circuit may be adjusted based on the target impedance value and the set frequency. These determinations may be based on the selected process, recipe, system operating parameters, and / or the characteristics and / or properties of the process chamber, ESC, and / or substrate. The characteristics may change dynamically. In one embodiment, the impedance value is adjusted to follow a predetermined trajectory based on the change in the characteristics. The predetermined trajectory may be, for example, a curve stored in the memory. A table may be stored in the memory to correlate the impedance value with other values and parameters. If one or more impedance values are to be changed, operation 1222 is performed; otherwise, operation 1216 may be performed. In one embodiment, the power supplied to one or more electrodes is modulated by changing the value of the corresponding impedance. This may change the stress, thickness, uniformity, refractive index, etch rate, deposition rate, and / or other intrinsic values and / or profile parameters of the substrate.

[0138] At 1222, the system controller 121 adjusts one or more impedance values of the tuning circuit, for example, by changing the inductance, capacitance, impedance, and / or resistance of one or more capacitors or inductors of the tuning circuit. The adjustment (or amount of adjustment) may be based on the measured and / or determined parameters, the selected process, recipe, system operating parameters, and / or the characteristics and / or properties of the process chamber, ESC, and / or substrate. The system controller 121 may also adjust the impedance 128 of the second RF matching network 129 as described above. After operation 1222, operation 1216 may be performed.

[0139] At 1224, the system controller 121 determines whether to modify the current process or perform another process. If the current process is to be modified or another process is to be performed, operation 1202 may be performed. If the current process is not modified and no further process is desired, the method may end at 1226.

[0140] The above operations may represent exemplary examples. Depending on the application, the operations may be performed sequentially, synchronously, simultaneously, continuously, during overlapping time periods, or in a different order. Additionally, any of the operations may not be performed or may be skipped depending on the progression and / or order of events.

[0141] Figure 13 An example of a substrate support 1300 is shown. The ESC (or substrate support) 1300 includes an outer ring electrode 1302 and two inner electrodes 1304, 1306. As Figure 3 、 5As shown in FIGS. 7-11, electrodes 1302, 1304, and 1306 are provided as examples of two inner electrodes and an outer ring electrode. Inner electrodes 1304 and 1306 may be "D"-shaped electrodes and are radially disposed inwardly toward outer ring electrode 1302. Gaps 1308 and 1310 exist between inner electrodes 1304 and 1306 and outer ring electrode 1302. Outer ring electrode 1302 may include outer ring 1311 and a linear central member 1312 extending between inner electrodes 1304 and 1306. Gaps 1314 and 1316 may exist between inner electrodes 1304 and 1306 and central member 1312. Central member 1312 extends between inner electrodes 1304 and 1306 and bisects middle region 1320 of outer ring 1311 into two equal parts on average. In one embodiment, power is supplied to outer ring electrode 1302 at the center of central member 1312. Power may be supplied to portions of inner electrodes 1304 and 1306 near the center of central member 1312.

[0142] The above examples provide an RF tuning system for indirectly and directly adjusting the impedance of a tuning circuit to change the power distribution to the electrodes in an ESC. Frequency adjustment at the RF generator can be used to quickly and significantly change the power distribution, thereby affecting the processing results on the wafer. The RF tuning system can perform power modulation for the electrodes via frequency adjustment of the tuning circuit and / or direct physical adjustment of the impedance. Using a combination of frequency adjustment and direct impedance adjustment can increase the tuning range and / or improve the tuning accuracy. The tuning circuit has an impedance for setting and adjusting parameters of the electrodes in an electrostatic chuck and / or other pedestal (or substrate support). The pedestal may not be an electrostatic chuck. This provides spatial tuning of the power delivered to the plasma in a processing chamber, such as a PECVD reactor. The examples provide new control parameters for film deposition and uniformity. As an example including an outer ring electrode and inner circular electrodes, the relative density of the plasma near the outer periphery of the substrate can be changed by modulating the power supplied to the electrodes. As described above, this can be done by modulating (or adjusting) the corresponding impedance. Different from changing gas parameters or overall power, modulating the power supplied to the electrodes does not necessarily change the global parameters affecting the entire substrate, which enables changing a selected region of the film on the substrate, such as the circular edge of the film on the substrate. This is different from conventional techniques that include using metal or dielectric rings to change the outside of the plasma, which cause changes in the gas flow and thus have a global impact, changing the film in the substrate film beyond the circular edge of the film.

[0143] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application, or uses. The broad teachings of the present disclosure can be implemented in a variety of forms. Thus, while the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited since other modifications will become apparent upon study of the drawings, the specification, and the appended claims. It should be understood that one or more steps in a method can be performed in a different order (or concurrently) without changing the principles of the present disclosure. Further, while each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more of the embodiments with each other remain within the scope of the present disclosure.

[0144] Various terms are used to describe spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), and the various terms include "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless a relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the foregoing disclosure, the relationship can be a direct relationship, where no other intervening element exists between the first and second elements, but can also be an indirect relationship, where one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C) using a non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0145] In some implementations, the controller is part of a system, which can be part of the above examples. Such systems can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer chucks, gas flow systems, etc.). These systems can be integrated with electronics for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronics can be referred to as a "controller", which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools, and / or load locks connected or interfaced to a particular system.

[0146] Broadly speaking, a controller can be defined as electronics having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operation parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operation parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of a wafer.

[0147] In some implementations, the controller can be part of or coupled to a computer that is integrated with, coupled to, otherwise networked to, or a combination thereof with the system. For example, the controller can be in the "cloud" or be all or part of a wafer fab host system, which can permit remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of a manufacturing operation, review the history of past manufacturing operations, review trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system via a network, which can include a local network or the Internet. The remote computer can include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers that are networked together and work towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remote (e.g., at the platform level or as part of a remote computer), which combine to control the processing on the chamber.

[0148] Example systems can include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that can be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0149] As described above, depending on one or more processing steps to be performed by a tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a host computer, another controller, or tools used in a material transport that shuttles a wafer container to and from a tool location and / or load port in a semiconductor manufacturing factory.

Claims

1. A substrate processing system, comprising: A matching network configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and match an input of the matching network to an output impedance of the radio frequency generator; A first tuning circuit different from the matching network and including a first circuit component having a first impedance, the first tuning circuit configured to receive an output of the matching network and output a second radio frequency signal to a first electrode in a substrate support; And A controller configured to determine a target impedance for the first circuit component and, based on the target impedance, signal the radio frequency generator to adjust the first frequency of the first radio frequency signal received at the matching network to a second frequency, thereby changing the first impedance of the first circuit component to match the target impedance.

2. The substrate processing system according to claim 1, further comprising the radio frequency generator having a center frequency, and the radio frequency generator configured to generate the first radio frequency signal having the first frequency based on a control signal, Wherein: The controller is configured to generate the control signal; and The first frequency differs from the center frequency by within a predetermined range.

3. The substrate processing system according to claim 1, wherein the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the first tuning circuit.

4. The substrate processing system according to claim 1, wherein the controller is configured to adjust the first frequency to the second frequency independently of matching the input of the matching network to the output impedance of the radio frequency generator.

5. The substrate processing system according to claim 1, wherein the controller is configured to adjust the first frequency to the second frequency without affecting impedance matching between the matching network and the radio frequency generator.

6. The substrate processing system according to claim 1, wherein the matching network is configured to maintain impedance matching between an input of the matching network and an output of the radio frequency generator when the controller adjusts the first frequency to the second frequency.

7. The substrate processing system according to claim 1, Wherein: The first tuning circuit includes the first circuit component and a second circuit component; The first circuit component is connected to the first electrode; The second circuit component is connected to a second electrode in the substrate support; And The controller is configured to adjust the first frequency to the second frequency to adjust the first impedance of the first circuit component and a second impedance of the second circuit component to change a power distribution from the first tuning circuit to the first electrode and the second electrode.

8. The substrate processing system according to claim 1, wherein a frequency of the second radio frequency signal is the same as a frequency of the first radio frequency signal.

9. The substrate processing system according to claim 1, wherein the controller is configured to adjust the capacitance or inductance of the first circuit component in addition to adjusting the first frequency to the second frequency when changing the first impedance to match the target impedance.

10. The substrate processing system according to claim 1, wherein the controller is configured to maintain at least one of the capacitance or inductance of the first circuit component at a fixed value when adjusting the first impedance.

11. The substrate processing system according to claim 1, wherein: the first tuning circuit includes distributing the total amount of power received from the matching network to the first circuit component and the second circuit component; and the controller is configured to adjust the first frequency to the second frequency to adjust a first portion of the total amount of power supplied to the first circuit component and a second portion of the total amount of power supplied to the second circuit component.

12. The substrate processing system according to claim 1, further comprising: a source terminal; and the substrate support, which includes the first electrode and the second electrode, wherein the first electrode and the second electrode receive power from the matching network via the source terminal, the first tuning circuit includes at least one of the following: a first impedance group, which is connected in series between the first electrode and the matching network, wherein the first impedance group receives the second radio frequency signal from the matching network via the source terminal, or a second impedance group, which is connected between the output of the matching network and the reference terminal, wherein the second impedance group receives the second radio frequency signal from the matching network via the source terminal.

13. The substrate processing system according to claim 12, further comprising a second tuning circuit, a third tuning circuit, and a third electrode, wherein: the first tuning circuit is connected to the first electrode to modify the output of the matching network, thereby generating the second radio frequency signal; the second tuning circuit is connected to the second electrode and is configured to modify the output of the matching network to generate a third radio frequency signal provided to the second electrode; and the third tuning circuit is connected to the third electrode and is configured to modify the output of the matching network to generate a fourth radio frequency signal provided to the third electrode.

14. The substrate processing system according to claim 1, wherein the first circuit component is connected to the first electrode and the second electrode in the substrate support and affects the power distribution to the first electrode and the second electrode.

15. A substrate processing system, comprising: a matching network, which is configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and match the input of the matching network with the output impedance of the radio frequency generator; a tuning circuit, which is different from the matching network, the tuning circuit is configured to output a second radio frequency signal to a first electrode in a substrate support and output a third radio frequency signal to a second electrode in the substrate support based on the output of the matching network; and A controller configured to adjust the power distribution to the first and second electrodes in the substrate support by: sending a signal to the radio frequency generator to adjust the first frequency of the first radio frequency signal received at the matching network to a second frequency.

16. The substrate processing system according to claim 15, wherein the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the tuning circuit.

17. The substrate processing system according to claim 15, wherein the controller is configured to adjust the first frequency to the second frequency independent of matching the input of the matching network to the output impedance of the radio frequency generator.

18. The substrate processing system according to claim 15, wherein the controller is configured to adjust the first frequency to the second frequency without affecting the impedance matching between the matching network and the radio frequency generator.

19. The substrate processing system according to claim 15, wherein the matching network is configured to maintain the impedance matching between the input of the matching network and the output of the radio frequency generator when the controller adjusts the first frequency to the second frequency.

20. The substrate processing system according to claim 15, wherein: the tuning circuit includes a first circuit component and a second circuit component; the first circuit component is connected to the first electrode; the second circuit component is connected to the second electrode; and adjusting the first frequency to the second frequency changes the first impedance of the first circuit component and the second impedance of the second circuit component.

21. The substrate processing system according to claim 15, wherein, the tuning circuit includes a first circuit component that is connected in parallel with a second circuit component between i) a ground reference and ii) the matching network and the first electrode.

22. The substrate processing system according to claim 21, wherein: the first circuit component is implemented as an inductor; and the second circuit component is implemented as a capacitor.

23. The substrate processing system according to claim 22, further comprising a second tuning circuit that is different from the matching network and outputs a fourth radio frequency signal to a first electrode, a second electrode, or a third electrode in the substrate support, wherein, the second tuning circuit includes another inductor that is connected in parallel with another capacitor between i) a ground reference and ii) the matching network and the second electrode.

24. The substrate processing system according to claim 15, wherein, the tuning circuit receives the output of the matching network and the output of another matching network.

25. The substrate processing system according to claim 15, wherein: the matching network is a first radio frequency power supply; and the tuning circuit receives the output of the first radio frequency power supply and the output of a second radio frequency power supply that is separate from the first radio frequency power supply.

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