A new type of ion implanter
By designing adjustable metal reflector plates and floating transmission tubes in the ion implanter, combined with the use of doped gas and cleaning gas, the problem of pipeline leakage and maintenance difficulty in ion implanter is solved, extending equipment life and saving maintenance costs.
Patent Information
- Application Number
- CN202110802220.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-07-15
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2041-07-15
AI Technical Summary
During the working process of existing ion implanters, due to the impact of high-temperature and high-speed ion beams on the inner wall of the pipeline, it is easy to cause pipeline leakage, affecting the normal use of the equipment and increasing the difficulty of maintenance.
A new ion implanter is designed, using adjustable metal reflector plates and floating transmission tubes. The sliding rod is driven by a motor drive to move the metal reflector plates, adjust the angle of the reflector plates to reduce damage to the floating tubes, and protect the arc chamber and component surfaces through the use of doped gas and cleaning gas to avoid unnecessary reactions and deposition.
It effectively reduces the damage to the floating tube, extends the life of the ion implanter, reduces the number of ion source maintenance, and saves maintenance time and cost.
Smart Images
Figure CN114743852B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a new type of ion implanter, belonging to the technical field of an exposure auxiliary device. Background Art
[0002] An ion implanter is a type of high-voltage small accelerator with the largest number of applications. It obtains the required ions from an ion source, accelerates them to obtain an ion beam with an energy of several hundred keV, and is used for ion implantation of semiconductor materials, large-scale integrated circuits, and devices. It is also used for surface modification and film formation of metal materials. When the existing ion implanter works, the reflection angle remains unchanged. Moreover, due to the impact of high-temperature and high-speed ion beams on the same part of the inner wall of the pipeline for a long time, it is easy to cause leakage in this part of the pipeline, affecting the normal use of the ion implanter and making it inconvenient to repair. Summary of the Invention
[0003] In view of this, the present invention provides a new type of ion implanter, which can adjust the angle of the metal reflector, reduce the damage of the floating tube, extend the service life of the ion implanter, reduce the number of ion source maintenance times, and thus save the time and cost required for ion source maintenance.
[0004] The present invention provides a new type of ion implanter, which includes a support part, an ion implanter, a guiding component, and a cleaning system; the ion implanter is located on the support part, one end of the ion implanter is provided with a transmitting gun, and the transmitting gun is connected to the ion implanter through a transmission tube. The guiding component is located at one end of the support part, and the guiding component includes a first support frame and a metal reflector. The metal reflector is connected to the first support frame through a first connecting rod and a second connecting rod. The second connecting rod is slidably connected to the metal reflector, and the second connecting rod is connected to the first support frame through a connecting component. The connecting component includes a first sliding rod and a second sliding rod. The first sliding rod and the second sliding rod are respectively connected to the first support frame and the second connecting rod, and the first sliding rod and the second sliding rod are connected through a turntable. One end of the first support frame is provided with a first opening corresponding to the transmitting gun. The transmission tube is a floating transmission tube, and the transmission tube includes a first conduit and a second conduit. The second conduit is located inside the first conduit, and the second conduit is connected to both ends of the first conduit through springs. An arc chamber corresponding to the cleaning system is provided inside the ion implanter.
[0005] The cleaning system introduces a doping gas into the arc chamber. The doping gas includes at least a first element, which can react with the materials on the surface of the arc chamber and its components under ionization conditions to form a gas compound, and the formed gas compound is easily decomposed by heat. While introducing the doping gas into the arc chamber, a cleaning gas is introduced simultaneously. The cleaning gas includes at least a second element, and the second element is suitable for preventing the first element from reacting with the materials on the surface of the arc chamber and its components under ionization conditions.
[0006] The doping gas includes BF, the second element is H element, and the cleaning gas includes H and an inert gas.
[0007] The support part includes a first support plate and a support block. The support block is connected to the first support plate through spring columns, and the emission gun is connected to the first support plate through a first support rod.
[0008] The metal reflector is located at the upper and lower ends of the first opening. The first connecting rod is hinged to the metal reflector. A chute corresponding to the second connecting rod is provided on the metal reflector, and the second connecting rod is slidably connected to the chute.
[0009] The outer sides of the first sliding rod and the second sliding rod are respectively connected to the first support frame and the second connecting rod, and the inner sides of the first sliding rod and the second sliding rod are slidably connected to the turntable.
[0010] The turntable is oval, and a corresponding motor is provided at one end of the turntable.
[0011] The second conduit penetrates through the first conduit. The second conduit and the first conduit are coaxial. First baffles are provided at both ends of the first conduit. The first baffles are slidably connected to the second conduit, and the length of the first baffles is greater than the length of the spring.
[0012] Advantages of the present invention:
[0013] The present invention provides a novel ion implanter, which can adjust the angle of the metal reflector, reduce the damage of the floating tube, extend the service life of the ion implanter, reduce the number of times of ion source maintenance, and thus save the time and cost required for ion source maintenance. Description of the drawings
[0014] Figure 1 It is a schematic diagram of the overall structure of a novel ion implanter of the present invention.
[0015] Figure 2 It is a front view structure schematic diagram of a novel ion implanter of the present invention.
[0016] Figure 3Schematic structural diagram of the structure at position I of a novel ion implanter according to the present invention.
[0017] Figure 4 Schematic structural diagram of the transfer tube of a novel ion implanter according to the present invention.
[0018] Figure 5 Schematic cross-sectional structural diagram of the transfer tube of a novel ion implanter according to the present invention.
[0019] (1. Ion implanter, 2. Emission gun, 3. Transfer tube, 4. First support frame, 5. Metal reflector, 6. First connecting rod, 7. Second connecting rod, 8. First sliding rod, 9. Second sliding rod, 10. Turntable, 11. First opening, 12. First conduit, 13. Second conduit, 14. Spring, 15. First support plate, 16. Support block, 17. Spring column, 18. First support rod, 19. First baffle) Detailed implementation manners
[0020] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0021] As Figures 1 to 5 shown: The present invention provides a novel ion implanter, which includes a support part, an ion implanter 1, a guiding component, and a cleaning system; the ion implanter 1 is located on the support part, one end of the ion implanter 1 is provided with an emission gun 2, and the emission gun 2 is connected to the ion implanter 1 through a transfer tube 3 provided therebetween. The guiding component is located at one end of the support part, and the guiding component includes a first support frame 4 and a metal reflector 5. The metal reflector 5 is connected to the first support frame 4 through a first connecting rod 6 and a second connecting rod 7. The second connecting rod 7 is slidably connected to the metal reflector 5, and the second connecting rod 7 is connected to the first support frame 4 through a connecting component. The connecting component includes a first sliding rod 8 and a second sliding rod 9. The first sliding rod 8 and the second sliding rod 9 are respectively connected to the first support frame 4 and the second connecting rod 7. The first sliding rod 8 and the second sliding rod 9 are connected through a turntable 10. One end of the first support frame 4 is provided with a first opening 11 corresponding to the emission gun 2. The transfer tube 3 is a floating transfer tube. The transfer tube 3 includes a first conduit 12 and a second conduit 13. The second conduit 13 is located inside the first conduit 12, and the second conduit 13 is connected to both ends of the first conduit 12 through a spring 14. An arc chamber corresponding to the cleaning system is provided inside the ion implanter 1.
[0022] In the present invention, a cleaning system introduces a doping gas into the arc chamber. The doping gas includes at least a first element, which can react with the materials on the surface of the arc chamber and its components under ionization conditions to form a gas compound, and the formed gas compound is easily decomposed by heat. While introducing the doping gas into the arc chamber, a cleaning gas is introduced simultaneously. The cleaning gas includes at least a second element, which is suitable for preventing the first element from reacting with the materials on the surface of the arc chamber and its components under ionization conditions.
[0023] In the present invention, the doping gas includes BF3, the second element is H element, and the cleaning gas includes H2 and an inert gas.
[0024] In the present invention, the support part includes a first support plate 15 and a support block 16. The support block 16 is connected to the first support plate 15 through a spring column 17, and the emission gun 2 is connected to the first support plate 15 through a first support rod 18. The support part includes a first support plate 15 and a support block 16. The support block 16 is connected to the first support plate 15 through a spring column 17, and the emission gun 2 is connected to the first support plate 15 through a first support rod 18.
[0025] In the present invention, the metal reflector 5 is located at the upper and lower ends of the first opening 11. The first connecting rod 6 is hinged to the metal reflector 5. A chute corresponding to the second connecting rod 7 is provided on the metal reflector 5, and the second connecting rod 7 is slidably connected to the chute.
[0026] In the present invention, the outer sides of the first sliding rod 8 and the second sliding rod 9 are respectively connected to the first support frame 4 and the second connecting rod 7, and the inner sides of the first sliding rod 8 and the second sliding rod 9 are slidably connected to the turntable 10.
[0027] In the present invention, the turntable 10 is oval, and a corresponding motor is provided at one end of the turntable 10.
[0028] In the present invention, the second conduit 13 penetrates through the first conduit 12. The second conduit 13 and the first conduit 12 are coaxial. First baffles 19 are provided at both ends of the first conduit 12. The first baffles 19 are slidably connected to the second conduit 13, and the length of the first baffles 19 is greater than the length of the spring 14.
[0029] Working principle: The ion implanter 1 emits through the transmission tube 3 and then through the emission gun 2. The motor drives the turntable 10 to rotate. The turntable 10 is elliptical. The turntable 10 squeezes the second sliding rod 9. The second sliding rod 9 drives the second connecting rod 7 to move under the extrusion of the turntable 10. The second connecting rod 7 moves along the chute to adjust the angle of the metal reflector 5, thereby changing the reflection angle. During the spraying process of the ion beam, the inner wall of the second conduit 13 will be impacted by the ion beam. At this time, due to the high speed of the ion beam, the second conduit 13 can undergo a small offset within the first conduit 12. The spring 14 can automatically reset the second conduit 13. The floating of the second conduit 13 can effectively prevent the ion beam from hitting the same part of the second conduit 13, reducing the damage to the second conduit 13. After the doping gas is introduced into the arc chamber, under ionization conditions, the doping gas will ionize into F ions. The surfaces of the arc chamber and its components in the existing ion source all include W. If there are no ions in the arc chamber that can effectively prevent the reaction between F ions and W at this time, the ionized F ions will react with W to form gaseous WF6. When WF6 migrates to a hotter area in the arc chamber, it will decompose thermally into solid W and gaseous F2. The solid W obtained by thermal decomposition will deposit in this area to form deposits. The cleaning gas containing H elements and the doping gas containing F elements are simultaneously introduced into the arc chamber. Under ionization conditions, while the doping gas ionizes into F ions, the cleaning gas will ionize into H ions. The presence of H ions will effectively prevent the reaction between F ions and W. The H ions will react with F ions preferentially to form gaseous HF and be pumped away, while W exists in solid form and does not participate in the reaction. That is, no gaseous substances containing W elements are generated during the whole process. That is, H ions effectively avoid the reaction between W and F. The presence of H ions preferentially consumes the F ions in the arc chamber, so that the W on the surface of the arc chamber and its components has no chance to react with F ions, thus avoiding the generation of gas substances containing W elements, and further avoiding the migration and deposition of W.
[0030] The above describes the present invention and its implementation manners. Such description is not restrictive. What is shown in the drawings is only one of the implementation manners of the present invention, and the actual structure is not limited thereto. Generally speaking, if those of ordinary skill in the art are inspired by it and without departing from the purpose of the present invention creation, without creative design, they create structural manners and embodiments similar to this technical solution, which should all fall within the protection scope of the present invention.
Claims
1. A new type of ion implanter, characterized in that: It includes a support part, an ion implanter (1), a guiding component, and a cleaning system; the ion implanter (1) is located on the support part, a transmitting gun (2) is provided at one end of the ion implanter (1), and a transfer tube (3) is provided between the transmitting gun (2) and the ion implanter (1) for connection. The guiding component is located at one end of the support part, and the guiding component includes a first support frame body (4) and a metal reflector (5). The metal reflector (5) is connected to the first support frame body (4) through a first connecting rod (6) and a second connecting rod (7). The second connecting rod (7) is slidably connected to the metal reflector (5), and the second connecting rod (7) is connected to the first support frame body (4) through a connecting component. The connecting component includes a first sliding rod (8) and a second sliding rod (9). The first sliding rod (8) and the second sliding rod (9) are respectively connected to the first support frame body (4) and the second connecting rod (7), and the first sliding rod (8) and the second sliding rod (9) are connected through a turntable (10). A first opening (11) corresponding to the transmitting gun (2) is provided at one end of the first support frame body (4). The transfer tube (3) is a floating transfer tube, and the transfer tube (3) includes a first conduit (12) and a second conduit (13). The second conduit (13) is located inside the first conduit (12), and the second conduit (13) is connected to both ends of the first conduit (12) through a spring (14). An arc chamber corresponding to the cleaning system is provided inside the ion implanter (1). The cleaning system introduces a doping gas into the arc chamber. The doping gas includes at least a first element, and the first element can react with the materials on the surface of the arc chamber and its components under ionization conditions to form a gas compound, and the formed gas compound is easily decomposed by heat. While introducing the doping gas into the arc chamber, a cleaning gas is introduced at the same time. The cleaning gas includes at least a second element, and the second element is suitable for preventing the first element from reacting with the materials on the surface of the arc chamber and its components under ionization conditions; The metal reflector (5) is located at the upper and lower ends of the first opening (11). The first connecting rod (6) is hinged to the metal reflector (5), and a sliding groove corresponding to the second connecting rod (7) is provided on the metal reflector (5). The second connecting rod (7) is slidably connected to the sliding groove.
2. The novel ion implanter according to claim 1, wherein: The doping gas includes BF(3), the second element is the H element, and the cleaning gas includes H(2) and an inert gas.
3. A novel ion implanter according to claim 1, characterized in that: The support part includes a first support plate (15) and a support block (16). The support block (16) is connected to the first support plate (15) through a spring column (17), and the transmitting gun (2) is connected to the first support plate (15) through a first support rod (18).
4. A novel ion implanter according to claim 1, characterized in that: The outer sides of the first sliding rod (8) and the second sliding rod (9) are respectively connected to the first support frame body (4) and the second connecting rod (7), and the inner sides of the first sliding rod (8) and the second sliding rod (9) are slidably connected to the turntable (10).
5. A novel ion implanter according to claim 4, characterized in that: The turntable (10) is oval, and a corresponding motor is provided at one end of the turntable (10).
6. A novel ion implanter according to claim 1, wherein: The second conduit (13) penetrates through the first conduit (12), the second conduit (13) and the first conduit (12) are coaxial, first baffles (19) are provided at both ends of the first conduit (12), the first baffles (19) are slidably connected to the second conduit (13), and the length of the first baffles (19) is greater than the length of the spring (14).
Citation Information
Patent Citations
Cleaning method of ion source and ion implantation device
JP1990155147A
Methods and apparatus for oxygen implantation
WO2002073652A2