Substrate liquid treatment device

Abstract

A substrate liquid processing device (16) of one form disclosed herein comprises a cup (30), a plurality of nozzle circulation systems (40), a second nozzle (61) and a storage section (70). The cup (30) surrounds the periphery of the substrate. The plurality of nozzle circulation systems (40) each comprise a first nozzle (41), a liquid receiving tank (42) and a circulation section (43), wherein the liquid receiving tank (42) is arranged outside the cup (30) and is used to receive the processing liquid sprayed from the first nozzle (41), and the circulation section (43) returns the processing liquid received by the liquid receiving tank (42) to the first nozzle (41). The second nozzle (61) is a nozzle that does not constitute the nozzle circulation system (40). The storage section (70) stores the cup (30), the plurality of first nozzles (41) and the plurality of liquid receiving tanks (42) of the plurality of nozzle circulation systems (40), and the second nozzle (62). In addition, the second nozzle (61) is arranged between the first side wall (71b) of the storage section (70) and the cup (30), and the plurality of first nozzles (41) are arranged between the second side wall (71a) of the storage section (70) which is different from the first side wall (71b) and the cup (30).

Description

Technical Field

[0001] The technical solution disclosed in the present invention relates to a substrate liquid processing device. Background Art

[0002] In the past, the following technology is known: in a substrate liquid processing device that performs liquid processing on substrates such as semiconductor wafers, a nozzle not used for liquid processing is placed on standby above a liquid receiving tank arranged outside the substrate, and processing liquid is sprayed from the nozzle into the liquid receiving tank (see patent document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 10-74725 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology that can easily control the atmosphere in a storage unit even if a component of a processing liquid leaks from a liquid receiving tank.

[0008] Solutions for solving problems

[0009] A substrate liquid processing device of a technical solution disclosed in the present invention includes a cup, a plurality of nozzle circulation systems, a second nozzle, and a storage portion. The cup surrounds the periphery of the substrate. The plurality of nozzle circulation systems each include a first nozzle, a liquid receiving tank, and a circulation portion, wherein the liquid receiving tank is disposed on the outside of the cup and is used to receive the processing liquid sprayed from the first nozzle, and the circulation portion returns the processing liquid received by the liquid receiving tank to the first nozzle. The second nozzle is a nozzle that does not constitute a nozzle circulation system. The storage portion stores the cup, the plurality of first nozzles and the plurality of liquid receiving tanks of the plurality of nozzle circulation systems, and the second nozzle. In addition, the second nozzle is disposed between the first side wall of the storage portion and the cup, and the plurality of first nozzles are disposed between the second side wall of the storage portion that is different from the first side wall and the cup.

[0010] Effects of the Invention

[0011] According to the present disclosure, even if components of the processing liquid leak from the liquid receiving tank, the atmosphere in the storage section can be easily controlled. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram showing the structure of a substrate processing system according to an embodiment.

[0013] Figure 2 It is a diagram showing the structure of a processing unit according to an embodiment.

[0014] Figure 3 It is a diagram showing the structure of the nozzle circulation system according to the embodiment.

[0015] Figure 4 It is a diagram for explaining the flow of the processing liquid in the nozzle circulation system according to the embodiment.

[0016] Figure 5 It is a diagram for explaining the flow of the processing liquid in the nozzle circulation system according to the embodiment.

[0017] Figure 6 This is a graph showing the results of investigating the temperature interference between two adjacent first nozzles.

[0018] Figure 7 This is a graph showing the results of investigating the temperature interference between two adjacent first nozzles.

[0019] Figure 8 It is a diagram showing an exhaust structure of a nozzle groove according to an embodiment.

[0020] Fig. 9 It is a diagram showing the structure of a cleaning chamber included in the exhaust duct according to the embodiment.

[0021] Fig.10 It is a diagram showing a modified example of the exhaust pipe according to the embodiment.

[0022] Fig.11 It is a diagram showing a first modified example of the nozzle moving mechanism according to the embodiment.

[0023] Fig.12 It is a diagram showing another arrangement example of the plurality of first nozzles and the plurality of nozzle grooves in the first modification.

[0024] Fig.13 It is a diagram showing a second modified example of the nozzle moving mechanism according to the embodiment.

[0025] Fig.14 It is a diagram showing a third modified example of the nozzle moving mechanism according to the embodiment.

[0026] Fig.15 It is a diagram showing a third modified example of the nozzle moving mechanism according to the embodiment.

[0027] Fig.16 It is a diagram showing a third modified example of the nozzle moving mechanism according to the embodiment.

[0028] Fig.17 It is a diagram showing a third modified example of the nozzle moving mechanism according to the embodiment.

[0029] Fig.18 It is a diagram showing a structural example of the nozzle groove in the third modified example.

[0030] Fig.19It is a diagram showing a fourth modified example of the nozzle moving mechanism of the embodiment.

[0031] Fig. 20 It is a diagram showing a fourth modified example of the nozzle moving mechanism of the embodiment.

[0032] Fig.21 It is a diagram showing a fourth modified example of the nozzle moving mechanism of the embodiment.

[0033] Fig. 22 It is a diagram showing a fourth modified example of the nozzle moving mechanism of the embodiment.

[0034] Fig.23 It is a diagram showing a fourth modified example of the nozzle moving mechanism of the embodiment. DETAILED DESCRIPTION

[0035] Hereinafter, the form of the substrate liquid processing device for implementing the present disclosure (hereinafter referred to as "embodiment") is described in detail with reference to the accompanying drawings. In addition, the substrate liquid processing device of the present disclosure is not limited to this embodiment. In addition, each embodiment can be appropriately combined within the scope that does not cause contradiction in the processing content. In addition, in each of the following embodiments, the same reference numerals are marked on the same parts, and repeated descriptions are omitted.

[0036] In addition, in order to make the description easier to understand, in the drawings referred to below, a rectangular coordinate system is sometimes shown that specifies the mutually orthogonal X-axis direction, Y-axis direction, and Z-axis direction and takes the positive direction of the Z-axis as the vertical upward direction. In addition, the rotation direction with the vertical axis as the rotation center is sometimes referred to as the θ direction.

[0037] In the embodiments shown below, expressions such as "constant", "orthogonal", "perpendicular" or "parallel" are sometimes used, but these expressions do not need to be strictly "constant", "orthogonal", "perpendicular" or "parallel". That is, the above expressions allow for deviations in manufacturing accuracy, setting accuracy, etc.

[0038] In a substrate liquid processing apparatus, the following process is known: a nozzle that is not used for liquid processing and is in a standby state is arranged above a nozzle slot, and a processing liquid is sprayed from the nozzle into the nozzle slot, and the nozzle slot is provided outside the substrate. This process is performed to improve the stability of liquid processing, for example, by discarding old processing liquid remaining in the nozzle into the nozzle slot before or regularly performing liquid processing.

[0039] On the other hand, in the substrate liquid processing apparatus of the embodiment, the following nozzle circulation processing is performed: the processing liquid is continuously ejected from the nozzle to the nozzle groove, and the processing liquid ejected to the nozzle groove is circulated and returned to the nozzle. The nozzle circulation processing is performed to stabilize the temperature inside the nozzle (particularly the front end portion) by, for example, allowing the temperature-adjusted processing liquid to flow inside the nozzle at all times.

[0040] According to the nozzle circulation process, for example, when a plurality of wafers are continuously processed, it is possible to prevent the etching amount of the first wafer from being lower than the etching amount of other wafers. That is, the nozzle circulation process can improve the uniformity of liquid processing among a plurality of wafers.

[0041] However, for example, when the nozzle groove has an opening of an open system, there is a risk that components contained in the processing liquid leak from the nozzle groove into the chamber and affect the atmosphere in the chamber. For example, the components of the processing liquid leaking from the nozzle groove may contaminate the wafer in the chamber and deteriorate the equipment in the chamber.

[0042] In particular, in the nozzle circulation process, the processing liquid is continuously ejected from the nozzle to the nozzle groove, so the leakage of the components of the processing liquid from the nozzle groove has a greater impact. Therefore, in the substrate liquid processing apparatus performing the nozzle circulation process, a technology that can easily control the atmosphere in the chamber even if the components of the processing liquid leak from the nozzle groove is desired.

[0043] <Overview of substrate processing system>

[0044] Reference Figure 1 The configuration of the substrate processing system 1 according to the embodiment will be described. Figure 1 It is a diagram showing the structure of a substrate processing system 1 according to the embodiment.

[0045] like Figure 1 As shown, the substrate processing system 1 includes a feeding station 2 and a processing station 3. The feeding station 2 and the processing station 3 are arranged adjacent to each other.

[0046] The loading and unloading station 2 includes a carrier loading unit 11 and a conveying unit 12. A plurality of substrates are loaded on the carrier loading unit 11. In the embodiment, a plurality of carriers C storing semiconductor wafers W (hereinafter referred to as wafers W) in a horizontal state are loaded.

[0047] The conveying section 12 is disposed adjacent to the carrier loading section 11, and includes a substrate conveying device 13 and an interface 14 inside the conveying section 12. The substrate conveying device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate conveying device 13 can move in the horizontal direction and the vertical direction while rotating around the vertical axis, and conveys the wafer W between the carrier C and the interface 14 using the wafer holding mechanism.

[0048] The processing station 3 is disposed adjacent to the conveying section 12. The processing station 3 includes a conveying section 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged on both sides of the conveying section 15.

[0049] The conveying section 15 has a substrate conveying device 17 therein. The substrate conveying device 17 has a wafer holding mechanism for holding the wafer W. In addition, the substrate conveying device 17 can move in the horizontal direction and the vertical direction while rotating around the vertical axis, and conveys the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0050] The processing unit 16 performs predetermined substrate processing on the wafer W conveyed by the substrate conveying device 17 .

[0051] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0052] In addition, the program may be a program recorded on a computer-readable storage medium, or may be a program installed from the storage medium to the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0053] In the substrate processing system 1 configured as described above, first, the substrate conveyor 13 of the transport station 2 takes out the wafer W from the carrier C placed on the carrier placement portion 11, and places the taken-out wafer W on the delivery portion 14. The wafer W placed on the delivery portion 14 is taken out from the delivery portion 14 by the substrate conveyor 17 of the processing station 3, and is transported to the processing unit 16.

[0054] After being processed by the processing unit 16, the wafer W is carried out from the processing unit 16 by the substrate conveyor 17 and placed on the delivery unit 14. Then, the substrate conveyor 13 returns the processed wafer W placed on the delivery unit 14 to the carrier C of the carrier placement unit 11.

[0055] <Structure of processing unit>

[0056] Next, refer to Figure 2 The structure of the processing unit 16 will be described. Figure 2 1 is a diagram showing a configuration of a processing unit 16 according to an embodiment. The processing unit 16 is an example of a substrate liquid processing apparatus.

[0057] like Figure 2As shown, the processing unit 16 includes a substrate holding mechanism 20 , a cup 30 , a plurality of nozzle circulation systems 40 , a nozzle moving mechanism 50 , a second processing liquid supply unit 60 , a gas supply unit 80 , and a chamber 70 .

[0058] The substrate holding mechanism 20 has a holding portion 21 that holds the wafer W horizontally. The holding portion 21 is, for example, a vacuum chuck that holds the back of the wafer W by adsorption. In addition, the holding portion 21 may also be a mechanical chuck that holds the peripheral portion of the wafer W. The holding portion 21 is connected to a support portion not shown in the figure. The support portion is a member extending in the vertical direction, and supports the holding portion 21 horizontally at the front end. In addition, the support portion is connected to a driving portion not shown in the figure at the base end. The driving portion rotates the support portion around the vertical axis.

[0059] The substrate holding mechanism 20 rotates the support column using the driving unit to rotate the support column, thereby rotating the holding unit 21 supported by the support column, thereby rotating the wafer W held by the holding unit 21 .

[0060] The cup 30 is configured to surround the periphery of the wafer W held by the holding portion 21, and is used to capture the processing liquid scattered from the wafer W due to the rotation of the holding portion 21. A discharge port is provided at the bottom of the cup 30 to discharge the processing liquid captured by the cup 30. In addition, an exhaust port is formed at the bottom of the cup 30 to discharge the gas supplied from the FFU (Fan Filter Unit) described later to the outside of the processing unit 16.

[0061] The nozzle circulation system 40 includes a first nozzle 41 , a nozzle groove 42 provided outside the cup 30 and receiving the processing liquid ejected from the first nozzle 41 , and a circulation unit 43 returning the processing liquid received by the nozzle groove 42 to the first nozzle 41 .

[0062] Each nozzle circulation system 40 circulates a different processing liquid. As an example, Figure 2 Two of the three nozzle circulation systems 40 shown circulate acidic treatment liquids, and the remaining nozzle circulation system 40 circulates alkaline treatment liquids. As the acidic treatment liquid, for example, BHF (a mixture of hydrofluoric acid and ammonium fluoride solution), DHF (dilute hydrofluoric acid), and H 2 SO 4 (sulfuric acid), etc. In addition, as the alkaline treatment liquid, for example, SC1 (a mixed liquid of ammonia, hydrogen peroxide, and water) and diluted ammonia water are used.

[0063] The first nozzle 41 has a spray port 411 of the processing liquid at the lower part, and the processing liquid is sprayed vertically downward from the spray port 411. The nozzle groove 42 is arranged in the standby area of ​​the first nozzle 41 set outside the cup 30. Specifically, the nozzle groove 42 is arranged just below the spray port 411 of the first nozzle 41 arranged in the standby area, and receives the processing liquid sprayed from the first nozzle 41.

[0064] In the present embodiment, the plurality of nozzle grooves 42 are integrally formed as the groove unit 420 , but the present invention is not limited thereto and the plurality of nozzle grooves 42 may be independent.

[0065] The circulation unit 43 is configured to include a tank, a pump, and the like, and circulates the processing liquid discharged from the nozzle groove 42 and returns the processing liquid to the first nozzle 41 again.

[0066] Here, refer to Figure 3 A configuration example of the nozzle circulation system 40 will be described. Figure 3 It is a figure which shows the structure of the nozzle circulation system 40 which concerns on embodiment.

[0067] like Figure 3 As shown, the nozzle circulation system 40 of the embodiment includes a first nozzle 41, a nozzle tank 42, a circulation unit 43, a supply path 44, and a discharge path 45. In addition, the circulation unit 43 includes a treatment liquid supply unit 101, a tank 102, and a circulation path 103. In addition, the operation of the nozzle circulation system 40 is controlled by the control unit 18 (see Figure 1 )control.

[0068] The processing liquid supply unit 101 includes a processing liquid supply source 101a, a valve 101b, and a flow rate regulator 101c. The processing liquid supply source 101a is connected to the tank 102 via the valve 101b and the flow rate regulator 101c. Thus, the processing liquid supply unit 101 supplies the processing liquid from the processing liquid supply source 101a to the tank 102.

[0069] The tank 102 stores the processing liquid. The tank 102 is connected to the drain section DR, and the processing liquid stored in the tank 102 can be discharged to the drain section DR.

[0070] The circulation path 103 is a circulation path that goes from the tank 102 to the tank 102. The circulation path 103 is provided with a pump 103a, a filter 103b, a temperature adjustment unit 103c, and a temperature detection unit 103d in order from the upstream side with the tank 102 as a reference (upstreammost).

[0071] The pump 103a forms a circulation flow of the treatment liquid that leaves the tank 102, passes through the circulation path 103, and returns to the tank 102. The filter 103b is used to remove pollutants such as particles contained in the treatment liquid circulating in the circulation path 103. The temperature adjustment unit 103c is a heating unit such as a heater or a cooling unit such as a cooling coil, and adjusts the temperature of the treatment liquid circulating in the circulation path 103. The temperature detection unit 103d is a thermocouple, for example, and is used to detect the temperature of the treatment liquid circulating in the circulation path 103. The control unit 18 can control the temperature of the treatment liquid circulating in the circulation path 103 by using the temperature adjustment unit 103c and the temperature detection unit 103d.

[0072] A connection area 104 is set at a position downstream of the temperature detection unit 103d of the circulation path 103 with the tank 102 as a reference (upstreammost). One or more supply paths 44 are connected to the connection area 104. Each supply path 44 is connected to the first nozzle 41 of the processing unit 16, and supplies the processing liquid flowing through the circulation path 103 to the first nozzle 41. In addition to the valve 44a, each supply path 44 is also provided with a flow rate regulator, a regulator, etc.

[0073] As described above, in the nozzle circulation system 40 , the processing liquid stored in the tank 102 is supplied to the first nozzle 41 through the circulation path 103 and the supply path 44 , and is ejected from the first nozzle 41 to the nozzle groove 42 .

[0074] The nozzle groove 42 of each processing unit 16 is connected to the discharge path 45. Specifically, the discharge path 45 includes an independent discharge path 45a connected to each nozzle groove 42 and a collection discharge path 45b formed by collecting a plurality of independent discharge paths 45a. The collection discharge path 45b is connected to the tank 102 so that the processing liquid discharged from the nozzle groove 42 via the independent discharge path 45a returns to the tank 102. A valve 45c is provided in each independent discharge path 45a. In addition, the collection discharge path 45b is connected to the discharge portion DR so that the processing liquid passing through the collection discharge path 45b can be discharged to the discharge portion DR.

[0075] Next, refer to Figure 4 and Figure 5 The flow of the processing liquid in the nozzle circulation system 40 will be described. Figure 4 and Figure 5 It is a diagram for explaining the flow of the processing liquid in the nozzle circulation system 40 according to the embodiment.

[0076] like Figure 4 As shown, first, the processing unit 16 positions the first nozzle 41 above the nozzle groove 42. Next, the processing unit 16 opens the valve 45c provided in the independent discharge path 45a.

[0077] Then, the processing unit 16 opens the valve 44a provided in the supply path 44. Figure 4As shown by the bold dashed line, the processing liquid can be circulated in a path that passes through the first nozzle 41, the nozzle groove 42, the discharge path 45, the circulation unit 43 (the tank 102 and the circulation path 103), and the supply path 44 in sequence.

[0078] On the other hand, Figure 5 As shown, when the first nozzle 41 is used for liquid processing, the processing unit 16 moves the first nozzle 41 above the wafer W. At this time, the processing unit 16 closes the valve 45c of the discharge path 45. Thus, the atmosphere in the discharge path 45 and the atmosphere around the wafer W can be suppressed from mixing.

[0079] That is, in the embodiment, when the first nozzle 41 is separated from the nozzle groove 42, the valve 45c is closed to suppress the Figure 4 The atmosphere within the path indicated by the bold dashed line in FIG. 8 is mixed with the atmosphere around the wafer W.

[0080] Next, the processing unit 16 opens the valve 44a. Figure 5 As shown by the bold dashed line, the processing liquid is ejected toward the wafer W through the supply path 44 and the first nozzle 41 .

[0081] As described above, during the standby of the first nozzle 41, the nozzle circulation system 40 can stabilize the temperature of the first nozzle 41 by continuing to temporarily dispense the processing liquid adjusted to a desired temperature from the first nozzle 41. That is, it is possible to suppress the deviation between the temperature of the first nozzle 41 and the temperature of the processing liquid. Thus, when liquid processing using the first nozzle 41 is performed, the processing liquid at a desired temperature can be sprayed toward the wafer W from the start of spraying. Therefore, stable liquid processing with less deviation caused by temperature changes can be achieved.

[0082] Furthermore, according to the nozzle circulation system 40, when the first nozzle 41 performs a temporary dispensing process using the nozzle groove 42, all the temporary dispensed processing liquid can be recovered in the tank 102. Therefore, the consumption of the processing liquid can be reduced.

[0083] Return to Figure 2 Next, the nozzle moving mechanism 50 will be described. The nozzle moving mechanism 50 is provided independently of the plurality of first nozzles 41 disposed in the chamber 70, and holds the first nozzle 41 for liquid processing among the plurality of first nozzles 41 and moves it above the wafer W.

[0084] Specifically, the nozzle moving mechanism 50 includes an arm 51 , a rotating and lifting mechanism 52 provided at a base end of the arm 51 for rotating and lifting the arm 51 , and a nozzle holding unit 53 provided at a front end of the arm 51 for holding the first nozzle 41 .

[0085] The nozzle moving mechanism 50 first rotates the arm 51 by using the rotary lifting mechanism 52, thereby arranging the nozzle holding part 53 above the held first nozzle 41. A plurality of first nozzles 41 are arranged on the rotary track of the nozzle holding part 53, and the nozzle moving mechanism 50 can arrange the nozzle holding part 53 above any first nozzle 41 by rotating the arm 51.

[0086] Next, the nozzle moving mechanism 50 lowers the arm 51 by the rotary lifting mechanism 52, and holds the first nozzle 41 by the nozzle holding portion 53. In addition, as the structure of the nozzle holding portion 53, any existing technology can be used. As an example, the nozzle holding portion 53 can also hold the first nozzle 41 by engaging with the first nozzle 41, as described in Japanese Patent Application Laid-Open No. 2012-54406. In addition, the number of first nozzles 41 held by the nozzle holding portion 53 can also be multiple.

[0087] Thereafter, the nozzle moving mechanism 50 raises and rotates the arm 51 by the rotary lifting mechanism 52 , so that the first nozzle 41 held by the nozzle holding portion 53 is disposed at a processing position above the wafer W.

[0088] In this way, the processing unit 16 can use the nozzle moving mechanism 50 to move only the first nozzle 41 used for liquid processing among the plurality of first nozzles 41 to the processing position above the wafer W. Therefore, the processing unit 16 can continue the nozzle cycle processing for the remaining first nozzles 41 during the liquid processing using the first nozzle 41.

[0089] The second processing liquid supply unit 60 includes a plurality of (here, two) second nozzles 61 and a rotation and lifting mechanism 62 for integrally rotating and lifting the plurality of second nozzles 61. The second nozzle 61 has a plurality of (here, two) second nozzles 61 in the horizontal direction. Figure 2 An extension portion 61a extending in the Y-axis direction (in the Y-axis direction) and a discharge port 61b located at the front end of the extension portion 61a and opening vertically downward.

[0090] Each second nozzle 61 is connected to a different processing liquid supply source. Figure 2 One of the two nozzles shown in FIG. 1 is connected to a DIW supply source that supplies DIW (deionized water), and the other is connected to an IPA supply source that supplies IPA (isopropyl alcohol).

[0091] The rotary lifting mechanism 62 supports the base ends of the extension portions 61 a of the plurality of second nozzles 61 , and moves the plurality of second nozzles 61 between a processing position above the wafer W and a standby position outside the wafer W in an integrated manner.

[0092] The gas supply unit 80 dries the wafer W by supplying gas to the wafer W after the liquid treatment. The gas supply unit 80 includes a third nozzle 81 and a rotating and lifting mechanism 82 for rotating and lifting the third nozzle 81. The third nozzle 81 has a plurality of nozzles extending in the horizontal direction ( Figure 2 The third nozzle 81 includes an extension portion 81a extending in the X-axis direction and a discharge port 81b located at the front end of the extension portion 81a. 2 Connect the gas supply source of gas such as gas, dry air, etc.

[0093] The rotary lifting mechanism 82 supports the base end portion of the extension portion 81 a of the third nozzle 81 , and moves the third nozzle 81 between a processing position above the wafer W and a standby position outside the wafer W.

[0094] The gas supply unit 80 may include a plurality of third nozzles 81. For example, the gas supply unit 80 may include a third nozzle 81 that ejects gas vertically toward the wafer W and a third nozzle 81 that ejects gas obliquely toward the wafer W.

[0095] The chamber 70 is a housing having a rectangular shape in a plan view, for example, and has a plurality of (four in this case) side walls 71a to 71d. The chamber 70 contains a substrate holding mechanism 20, a cup 30, a plurality of first nozzles 41 and a plurality of nozzle slots 42 of a plurality of nozzle circulation systems 40, a nozzle moving mechanism 50, a second processing liquid supply unit 60, and a gas supply unit 80.

[0096] A plurality of exhaust ports 72 are provided on the bottom surface of the chamber 70. The plurality of exhaust ports 72 are disposed, for example, near the side walls 71a to 71d of the chamber 70. The plurality of exhaust ports 72 are connected to an exhaust pipe 72a, and the atmosphere in the chamber 70 is exhausted to the outside of the chamber 70 from the plurality of exhaust ports 72 through the exhaust pipe 72a.

[0097] In addition, an FFU (not shown) is provided at the top of the chamber 70. The FFU forms a downward flow in the chamber 70. The atmosphere in the chamber is maintained as an inert gas atmosphere such as nitrogen or a clean gas atmosphere such as clean dry air by the FFU. In addition, the chamber 70 is provided with an inlet and outlet for carrying in and out the wafer W and a gate for opening and closing the inlet and outlet.

[0098] In the processing unit 16 configured as described above, the plurality of first nozzles 41 constituting each nozzle circulation system 40 are concentrated at one location in the chamber 70 , and are separated from the plurality of second nozzles 61 not constituting the nozzle circulation system 40 .

[0099] Specifically, the plurality of first nozzles 41 are concentratedly arranged on a side different from the side on which the plurality of second nozzles 61 are arranged with respect to the cup 30. That is, when the chamber 70 is viewed from above, the plurality of second nozzles 61 are arranged between the cup 30 and the side wall 71 b on the positive direction side of the X axis of the chamber 70, whereas the plurality of first nozzles 41 are arranged between the cup 30 and the side wall 71 a on the negative direction side of the X axis of the chamber 70.

[0100] As described above, in the processing unit 16 of the embodiment, the plurality of first nozzles 41 constituting each nozzle circulation system 40 are concentrated in the chamber 70. In other words, the plurality of nozzle grooves 42 corresponding to the plurality of first nozzles 41 are concentrated in one place in the chamber 70. Therefore, even if the components of the processing liquid leak from the nozzle grooves 42, since the leakage site is concentrated in one place, it is easy to control the atmosphere in the chamber 70.

[0101] Furthermore, when the temperature of the processing liquid ejected from the first nozzles 41 is different for each first nozzle 41, processing liquids of different temperatures are provisionally dispensed from the plurality of first nozzles 41 arranged collectively. The inventors of the present application have confirmed that temperature interference between the first nozzles 41 does not occur even in this case.

[0102] Reference Figure 6 and Figure 7 This aspect will be described in detail. Figure 6 and Figure 7 This is a graph showing the results of investigating the temperature interference between two adjacent first nozzles 41 .

[0103] The inventors of the present application arranged the first nozzle 41 (hereinafter referred to as "nozzle A") that ejected IPA set to 70°C and the first nozzle 41 (hereinafter referred to as "nozzle B") that ejected DHF set to 25°C close to each other. Furthermore, the inventors of the present application ejected IPA from nozzle A for 120 seconds while stopping the ejection of DHF from nozzle B (Example 1). In addition, the inventors ejected DHF from nozzle B for 120 seconds and, at the same time, ejected IPA from nozzle A for 120 seconds (Example 2).

[0104] The inventors of the present application measured the temperature of the nozzle B in each of Examples 1 and 2 using a thermocouple installed inside the nozzle B. The measurement results of Example 1 are shown in FIG. Figure 6 The measurement results of Example 2 are shown in Figure 7 .exist Figure 6 and Figure 7 3 shows a graph in which the horizontal axis represents the elapsed time from the start of ejection of IPA and the vertical axis represents the temperature of the nozzle B (the temperature of the DHF in the nozzle B).

[0105] like Figure 6 and Figure 7 As shown in FIG. 1 , the deviation of the IPA ejection end time point relative to the set temperature (25° C.) of nozzle B is Figure 6 The example 1 shown is larger, Figure 7 In Example 2 shown, almost no temperature change was observed.

[0106] These results show that by continuing to provisionally dispense the processing liquid from the first nozzle 41 to the nozzle groove 42 during the nozzle circulation process, temperature interference between the first nozzles 41 does not occur even when the plurality of first nozzles 41 are arranged together.

[0107] <Nozzle slot exhaust structure>

[0108] Next, refer to Figure 8 The exhaust structure of the nozzle groove 42 will be described. Figure 8 It is a diagram showing the exhaust structure of the nozzle groove 42 according to the embodiment.

[0109] like Figure 8 As shown, the processing unit 16 has an exhaust pipe 200 shared by the plurality of nozzle slots 42. As described above, in the processing unit 16 of the embodiment, the plurality of first nozzles 41 are concentrated in one place, and the plurality of nozzle slots 42 are also concentrated in one place. Therefore, it is easy to set the exhaust pipe 200 shared by the plurality of nozzle slots 42.

[0110] The exhaust pipe 200 has: a plurality of exhaust inlet ports 201 , a cleaning chamber 202 communicating with the plurality of exhaust inlet ports 201 , a gas-liquid separator 203 disposed downstream of the cleaning chamber 202 , and a connecting flow path 204 connecting the cleaning chamber 202 and the gas-liquid separator 203 .

[0111] The plurality of exhaust inlets 201 are provided at a portion of the bottom surface 73 of the chamber 70 located around the tank unit 420. For example, a portion of the plurality of exhaust inlets 201 are provided at the side wall 71a of the chamber 70 (see Figure 2 ) and the tank unit 420. In addition, another part of the exhaust gas inlet ports 201 among the plurality of exhaust gas inlet ports 201 are disposed between the cup 30 and the tank unit 420.

[0112] According to the processing unit 16 of the embodiment, components of the processing liquid leaking from the plurality of nozzle grooves 42 can be collectively discharged from the plurality of exhaust inlet ports 201 formed around the groove unit 420. Therefore, the structure of the exhaust path can be simplified compared to, for example, a case where the plurality of nozzle grooves 42 are dispersedly arranged.

[0113] The cleaning chamber 202 is disposed, for example, at the lower portion (under the bottom surface) of the tank unit 420. In the cleaning chamber 202, a process of removing components of the processing liquid from the exhaust gas introduced through the plurality of exhaust gas inlet ports 201 is performed.

[0114] Here, refer to Fig. 9 The structure of the cleaning chamber 202 will be described. Fig. 9 It is a figure which shows the structure of the cleaning chamber 202 which the exhaust duct 200 of this embodiment has.

[0115] like Fig. 9 As shown, a cleaning liquid supply unit 210 is disposed inside the cleaning chamber 202 , and the cleaning liquid supply unit 210 supplies cleaning liquid into the cleaning chamber 202 .

[0116] The cleaning liquid supply unit 210 includes a first spray unit 211 and a second spray unit 212. The first spray unit 211 is provided, for example, at the top of the cleaning chamber 202, and sprays the cleaning liquid in a shower to the space in the cleaning chamber 202. In addition, the second spray unit 212 sprays the cleaning liquid in a shower to, for example, the wall surface in the cleaning chamber 202. In addition, a plurality of second spray units 212 may be provided in the cleaning chamber 202. In this case, the plurality of second spray units 212 spray the cleaning liquid to different wall surfaces in the cleaning chamber 202.

[0117] The first ejection unit 211 includes a cleaning liquid supply source 211a, a valve 211b, and a flow rate regulator 211c. In addition, the second ejection unit 212 includes a cleaning liquid supply source 212a, a valve 212b, and a flow rate regulator 212c. That is, the cleaning liquid supply unit 210 can independently eject the cleaning liquid from the first ejection unit 211 and the cleaning liquid from the second ejection unit 212. The cleaning liquid is, for example, DIW.

[0118] The cleaning liquid supply unit 210 is controlled by the control unit 18. The control unit 18 controls the cleaning liquid supply unit 210 to eject the cleaning liquid from the first ejection unit 211 at a first flow rate and for a first processing time.

[0119] For example, during the operation of the processing unit 16, the control unit 18 always sprays the cleaning liquid from the first spray unit 211. The cleaning liquid is supplied from the first spray unit 211 to the space in the cleaning chamber 202, and thus the components (acid components and alkaline components) of the processing liquid contained in the exhaust gas flowing through the cleaning chamber 202 are dissolved in the cleaning liquid. As a result, the components of the processing liquid can be removed from the exhaust gas flowing through the cleaning chamber 202.

[0120] Furthermore, the control unit 18 controls the cleaning liquid supply unit 210 to discharge the cleaning liquid from the second discharge unit 212 at a second flow rate greater than the first flow rate and for a second treatment time shorter than the first treatment time.

[0121] For example, the control unit 18 causes the second ejection unit 212 to eject the cleaning liquid at a predetermined time. The second ejection unit 212 ejects the cleaning liquid to the wall surface in the cleaning chamber 202 at a flow rate greater than that of the first ejection unit 211, in other words, at a pressure higher than that of the first ejection unit 211. Thus, foreign matter such as crystals attached to the cleaning chamber 202 can be flushed out by the cleaning liquid.

[0122] The exhaust gas entering the cleaning chamber 202 from the plurality of exhaust inlet ports 201 and the cleaning liquid supplied into the cleaning chamber 202 by the cleaning liquid supply unit 210 are supplied to the gas-liquid separation unit 203 via the connecting flow path 204. The gas-liquid separation unit 203, for example, includes an exhaust pipe 203a extending upward and a drain pipe 203b located below the exhaust pipe 203a. Of the exhaust gas and the cleaning liquid reaching the gas-liquid separation unit 203, the exhaust gas is discharged to the outside through the exhaust pipe 203a, and the cleaning liquid is discharged to the outside through the drain pipe 203b. The exhaust pipe 203a is connected to the exhaust pipe 72a, and the exhaust pipe 72a is connected to the plurality of exhaust ports 72 provided on the bottom surface of the chamber 70.

[0123] As described above, the processing unit 16 of the embodiment includes the exhaust pipe 200 for exhausting the atmosphere around the tank unit 420 in a centralized manner, in addition to the exhaust port 72 provided on the bottom surface 73 of the chamber 70. Therefore, according to the processing unit 16 of the embodiment, even when components of the processing liquid leak from the plurality of nozzle tanks 42, exhaust gas containing the components of the processing liquid can be efficiently exhausted from the chamber 70.

[0124] <Modification of the exhaust structure of the nozzle groove>

[0125] Next, refer to Fig.10 Modifications of the above-described exhaust pipe 200 will be described. Fig.10 It is a diagram showing a modified example of the exhaust pipe according to the embodiment.

[0126] like Fig.10 As shown, the processing unit 16A includes: an acid tank unit 420A1 having a nozzle tank 42A1 for receiving an acid processing liquid, and an alkali tank unit 420A2 having a nozzle tank 42A2 for receiving an alkali processing liquid. The acid tank unit 420A1 and the alkali tank unit 420A2 are independent and are adjacently arranged at a predetermined interval on the rotating track of the nozzle holding unit 53.

[0127] The processing unit 16A has an acid exhaust pipe 200A1 and an alkali exhaust pipe 200A2. The acid exhaust pipe 200A1 has a plurality of exhaust inlets 201A1 around the acid tank unit 420A1. The alkali exhaust pipe 200A2 has a plurality of exhaust inlets 201A2 around the alkali tank unit 420A2.

[0128] In addition, the acid exhaust pipe 200A1 is arranged at the lower part (below the bottom surface) of the acid tank unit 420A1, and has a cleaning chamber 202A1 connected to a plurality of exhaust inlets 201A1. The cleaning chamber 202A1 has a cleaning liquid supply unit inside, and is connected to a gas-liquid separation unit not shown in the figure via a connection path 204A1. In addition, the alkali exhaust pipe 200A2 is arranged at the lower part (below the bottom surface) of the alkali tank unit 420A2, and has a cleaning chamber 202A2 connected to a plurality of exhaust inlets 201A2. The cleaning chamber 202A2 has a cleaning liquid supply unit inside, and is connected to a gas-liquid separation unit not shown in the figure via a connection path 204A2.

[0129] In this way, the exhaust paths of the plurality of nozzle grooves 42A1 and 42A2 can also be divided into an acid exhaust path (acid exhaust pipe 200A1) and an alkali exhaust path (alkali exhaust pipe 200A2). By configuring in this way, the generation of crystals (salts) caused by the mixing of the acid component contained in the acid treatment liquid and the alkali component contained in the alkali treatment liquid can be suppressed.

[0130] <Modification of the nozzle moving mechanism>

[0131] Next, a modification of the nozzle moving mechanism 50 will be described. Fig.11 1 is a diagram showing a first modified example of the nozzle moving mechanism of the embodiment. Fig.12 It is a diagram showing another arrangement example of the plurality of first nozzles 41 and the plurality of nozzle grooves 42 in the first modification.

[0132] like Fig.11 As shown, the nozzle moving mechanism 50B includes an arm 51B, a rotary lifting mechanism 52 , and a nozzle holding portion 53 .

[0133] The arm 51B includes a first arm 51Ba, a second arm 51Bb, and a joint 51Bc. The first arm 51Ba and the second arm 51Bb both extend in the horizontal direction. The base end of the first arm 51Ba is connected to the rotary lifting mechanism 52, and a nozzle holding portion 53 is provided at the front end of the second arm 51Bb. The joint 51Bc is arranged between the first arm 51Ba and the second arm 51Bb, and connects the first arm 51Ba and the second arm 51Bb. The joint 51Bc includes a rotation drive portion such as a motor, which can make the second arm 51Bb rotate around a vertical axis relative to the first arm 51Ba.

[0134] As described above, the nozzle moving mechanism 50B may be a structure including an arm 51B having a joint portion 51Bc. With this structure, the degree of freedom in the arrangement of the plurality of first nozzles 41 and the plurality of nozzle grooves 42 can be increased.

[0135] For example, in Fig.112 shows an example in which a plurality of first nozzles 41 and a plurality of nozzle grooves 42 are arranged in a straight line in the horizontal direction.

[0136] In addition, if Fig.12 As shown, a part of the plurality of first nozzles 41 may be arranged on one side (for example, the positive direction side of the Y axis) of the rotary lifting mechanism 52 of the nozzle moving mechanism 50B, and another part of the first nozzles 41 may be arranged on the other side (for example, the negative direction side of the Y axis) of the rotary lifting mechanism 52 of the nozzle moving mechanism 50B. In this case, the plurality of nozzle slots 42 are also separately arranged on one side and the other side of the rotary lifting mechanism 52. Therefore, for example, by arranging a nozzle slot 42 for receiving an acidic treatment liquid on one side of the rotary lifting mechanism 52 and arranging a nozzle slot 42 for receiving an alkaline treatment liquid on the other side, it is possible to suppress the mixing of the components of the acidic treatment liquid and the components of the alkaline treatment liquid. In addition, without limitation to this, for example, a nozzle slot 42 for receiving a high-temperature treatment liquid may be arranged on one side of the rotary lifting mechanism 52, and a nozzle slot 42 for receiving a low-temperature treatment liquid may be arranged on the other side.

[0137] Fig.13 2 is a diagram showing a second modified example of the nozzle moving mechanism of the embodiment. Fig.13 As shown, the nozzle moving mechanism 50C includes an arm 51C, an arm moving portion 52C, a nozzle holding portion 53 , and a holding portion moving portion 54 .

[0138] The arm 51C extends in a horizontal direction (e.g., the Y-axis direction). The arm moving portion 52C includes a guide rail 52C1 extending in a horizontal direction (e.g., the X-axis direction) orthogonal to the extending direction of the arm 51C, and a driving portion 52C2 that supports the arm 51C horizontally and can move the arm 51C along the guide rail 52C1. The holding portion moving portion 54 supports the nozzle holding portion 53 at the bottom and can move along the arm 51C.

[0139] As described above, the nozzle moving mechanism 50C may be configured to move the nozzle holding portion 53 in two horizontal directions (X-axis direction and Y-axis direction) orthogonal to each other. This configuration can improve the degree of freedom in arranging the plurality of first nozzles 41 and the plurality of nozzle slots 42.

[0140] For example, in Fig.13 4 shows an example in which the plurality of first nozzles 41 and the plurality of nozzle slots 42 are arranged in a straight line along the extension direction of the arm 51C, i.e., the Y-axis direction. Not limited thereto, the plurality of first nozzles 41 and the plurality of nozzle slots 42 may also be arranged in a straight line along the extension direction of the guide rail 52C1, i.e., the X-axis direction. In addition, the plurality of first nozzles 41 and the plurality of nozzle slots 42 do not necessarily need to be arranged in a straight line.

[0141] Figure 14 to Figure 17 2 is a diagram showing a third modified example of the nozzle moving mechanism of the embodiment. Fig.14 and Fig.15 As shown, the nozzle moving mechanism 50D includes a shaft portion 56 , a driving portion 57 , a plurality of arms 58 , and a plurality of switching portions 59 .

[0142] The shaft portion 56 extends in the vertical direction (Z-axis direction). The drive portion 57 is provided, for example, at the base end portion of the shaft portion 56 to rotate the shaft portion 56 around the vertical axis Ax. In addition, the drive portion 57 can move the shaft portion 56 up and down.

[0143] The base ends of the plurality of arms 58 are axially supported by the shaft 56, and the front ends thereof support the first nozzle 41. The plurality of arms 58 are supported at different height positions by the shaft 56, and the plurality of first nozzles 41 are respectively held at different height positions. Thus, the plurality of first nozzles 41 are arranged at height positions that do not overlap each other in the vertical direction.

[0144] The switching unit 59 is, for example, an electromagnetic clutch, a mechanical clutch, or the like, and switches the arm 58 that rotates together with the shaft 56 among the plurality of arms 58 .

[0145] For example, Fig.16 As shown, the switching unit 59 includes an armature 59a, a rotor 59b, and an electromagnet 59c. The armature 59a is attached to the base end 58a of the arm 58 via a biasing member 59a1 such as a leaf spring. The biasing member 59a1 biases the armature 59a toward the base end 58a of the arm 58. The rotor 59b is disposed opposite to the armature 59a with a gap therebetween, and rotates together with the shaft 56. The electromagnet 59c is built into the rotor 59b.

[0146] like Fig.16 As shown in the above figure, when the electromagnet 59c is not energized, the switching portion 59 and the base end portion 58a of the arm 58 are separated. In this case, the power of the shaft portion 56 is not transmitted to the arm 58. Therefore, the arm 58 does not rotate.

[0147] On the other hand, Fig.16 As shown in the figure below, when the electromagnet 59c is energized, the armature 59a is attracted by the electromagnet 59c and closely adheres to the rotor 59b. Thus, the power of the shaft 56 is transmitted to the arm 58 via the rotor 59b and the armature 59a, and the arm 58 rotates.

[0148] In this way, according to the nozzle moving mechanism 50D, the first nozzle 41 used for liquid processing among the plurality of first nozzles 41 can be selectively moved. Fig.17 As shown, when the middle first nozzle 41 among the plurality of first nozzles 41 is used for liquid processing, the nozzle moving mechanism 50D can move only the middle first nozzle 41 to a processing position above the wafer W by rotating it.

[0149] Fig.182 is a diagram showing a structural example of the nozzle groove in the third variant. Fig.18 As shown, the tank unit 420D has a plurality of nozzle tanks 42D. The plurality of nozzle tanks 42D have openings 42D1 at height positions corresponding to the height positions of the corresponding first nozzles 41. That is, the plurality of nozzle tanks 42D each have openings 42D1 at different height positions. Thus, even when the plurality of first nozzles 41 are arranged at different heights, it is possible to appropriately suppress the components of the processing liquid ejected from the plurality of first nozzles 41 from leaking from the nozzle tank 42D.

[0150] Fig.19 4 is a diagram showing a fourth modified example of the nozzle moving mechanism of the embodiment. Fig.19 As shown, the nozzle moving mechanism 50E includes a shaft portion 56, a driving portion 57, a plurality of arms 58E, and a switching portion 59E.

[0151] The plurality of arms 58E are provided independently of the shaft portion 56. In addition, the plurality of arms 58E are radially arranged around the vertical axis Ax, which is the center of rotation of the shaft portion 56, with the base end portion 58Ea facing the shaft portion 56. In addition, the plurality of arms 58E may be arranged at different height positions or at the same height position.

[0152] The switching part 59E is provided at one position on the outer periphery of the shaft 56. The switching part 59E is, for example, an electromagnetic clutch, which attracts the base end 58Ea of the arm 58E by electromagnetic force and connects it to the shaft 56. Thus, the power of the shaft 56 is transmitted to the arm 58E, and the arm 58E rotates together with the shaft 56.

[0153] As described above, the nozzle moving mechanism 50E may be configured such that a plurality of arms 58E provided independently of the shaft 56 are connected to the shaft 56 by the switching unit 59E. The switching unit 59E is not limited to an electromagnetic clutch, but may be a mechanical clutch.

[0154] Figure 20 to Figure 23 4 is a diagram showing a fourth modified example of the nozzle moving mechanism of the embodiment. Fig. 20 As shown, the nozzle moving mechanism 50F includes first to third shafts 56F1 to 56F3, first to third driving portions 57F1 to 57F3, and first to third arms 58F1 to 58F3. The number of shafts, driving portions, and arms included in the nozzle moving mechanism 50F is not limited to three.

[0155] The first shaft portion 56F1 and the second shaft portion 56F2 are cylindrical members. The second shaft portion 56F2 is disposed inside the first shaft portion 56F1. In addition, the third shaft portion 56F3 is a cylindrical member disposed inside the second shaft portion 56F2. The first drive portion 57F1 to the third drive portion 57F3 are provided one-to-one on the first shaft portion 56F1 to the third shaft portion 56F3 to make the first shaft portion 56F1 to the third shaft portion 56F3 rise and fall and rotate around the same vertical axis Ax.

[0156] The base ends of the first arm 58F1 to the third arm 58F3 are supported by the first shaft portion 56F1 to the third shaft portion 56F3, respectively, and the tip ends support the first nozzle 41. The first arm 58F1 to the third arm 58F3 are arranged radially around the vertical axis Ax. In addition, the first arm 58F1 to the third arm 58F3 are arranged at the same height position, for example.

[0157] The first shaft portion 56F1 has a through portion 562F1 through which the second arm 58F2 in the standby state passes and a through portion 563F1 through which the third arm 58F3 in the standby state passes when the first shaft portion 56F1 is raised or lowered by the first driving portion 57F1. The upper and lower ends of the through portions 562F1 and 563F1 are open. Fig.21 As shown, the first shaft portion 56F1 can rise without interfering with the second arm 58F2 and the third arm 58F3 .

[0158] Furthermore, by raising the first shaft portion 56F1, the first shaft portion 56F1 does not interfere with the second arm 58F2 and the third arm 58F3 not only in the vertical direction but also in the circumferential direction. Thus, the first shaft portion 56F1 can be rotated without interfering with the second arm 58F2 and the third arm 58F3. That is, only the first arm 58F1 can be selectively rotated.

[0159] The second shaft portion 56F2 has a through portion 563F2 through which the third arm 58F3 in the standby state passes when the second shaft portion 56F2 is raised or lowered by the second driving portion 57F2. The upper and lower ends of the through portion 563F2 are open. Fig. 22 As shown, the second shaft portion 56F2 can rise without interfering with the third arm 58F3. In addition, as described above, since the through portion 562F1 is provided on the first shaft portion 56F1, the second arm 58F2 can rise without interfering with the first shaft portion 56F1.

[0160] Furthermore, by raising the second shaft portion 56F2, the second shaft portion 56F2 does not interfere with the first arm 58F1 and the third arm 58F3 in the circumferential direction. Therefore, the second shaft portion 56F2 can be rotated without interfering with the first arm 58F1 and the third arm 58F3. That is, only the second arm 58F2 can be selectively rotated.

[0161] In addition, as described above, the first shaft portion 56F1 and the second shaft portion 56F2 are provided with the through portions 563F1 and 563F2, respectively. Fig.23 As shown, the third arm 58F3 can rise without interfering with the first shaft portion 56F1 and the second shaft portion 56F2.

[0162] Furthermore, by raising the third shaft portion 56F3, the third shaft portion 56F3 does not interfere with the first arm 58F1 and the second arm 58F2 in the circumferential direction. Therefore, the third shaft portion 56F3 can be rotated without interfering with the first arm 58F1 and the second arm 58F2. That is, only the third arm 58F3 can be selectively rotated.

[0163] In this manner, the nozzle moving mechanism 50F can move only one of the first arm 58F1 to the third arm 58F3 up and down and rotate.

[0164] As described above, the substrate liquid processing device of the embodiment (as an example, the processing unit 16) has a cup (as an example, the cup 30), a plurality of nozzle circulation systems (as an example, the nozzle circulation system 40), a second nozzle (as an example, the second nozzle 61), and a storage section (as an example, the chamber 70). The cup surrounds the periphery of the substrate (as an example, the wafer W). The plurality of nozzle circulation systems each include a first nozzle (as an example, the first nozzle 41), a liquid receiving tank (as an example, the nozzle tank 42) arranged outside the cup and receiving the processing liquid ejected from the first nozzle, and a circulation section (as an example, the circulation section 43) that returns the processing liquid received by the liquid receiving tank to the first nozzle. The second nozzle is a nozzle that does not constitute the nozzle circulation system. The storage section stores the cup, the plurality of first nozzles and the plurality of liquid receiving tanks of the plurality of nozzle circulation systems, and the second nozzle. In addition, the second nozzle is arranged between the first side wall (as an example, side wall 71b) of the storage portion and the cup, and the plurality of first nozzles are arranged between the second side wall (as an example, side wall 71a) of the storage portion which is different from the first side wall and the cup.

[0165] Therefore, according to the substrate liquid processing apparatus of the embodiment, even if components of the processing liquid leak from the liquid receiving tank, since the leakage site is concentrated in one place, it is easy to control the atmosphere in the storage section.

[0166] The substrate liquid processing apparatus of the embodiment may also have an exhaust pipe (for example, exhaust pipe 200) shared by multiple liquid receiving tanks. As multiple first nozzles are concentrated in one place, multiple liquid receiving tanks are also concentrated in one place. Therefore, it is easy to set up an exhaust pipe shared by multiple liquid receiving tanks.

[0167] The substrate liquid processing apparatus of the embodiment may also include a tank unit having a plurality of liquid receiving tanks (for example, the tank unit 420). In this case, the exhaust pipe may also include a plurality of exhaust inlets (for example, the exhaust inlet 201) on the bottom surface of the storage section (for example, the bottom surface 73) around the tank unit. Thus, even if components of the processing liquid leak from the plurality of liquid receiving tanks, the exhaust gas containing the components of the processing liquid can be efficiently discharged from the storage section.

[0168] The substrate liquid processing apparatus of the embodiment may include a cleaning liquid supply unit (for example, cleaning liquid supply unit 210 ) for supplying cleaning liquid to the inside of the exhaust pipe. This makes it possible to clean the inside of the exhaust pipe.

[0169] The substrate liquid processing apparatus of the embodiment may also include a control unit for controlling the cleaning liquid supply unit. In addition, the cleaning liquid supply unit may also include a first ejection unit and a second ejection unit for ejecting the cleaning liquid. In this case, the control unit may control the cleaning liquid supply unit to eject the cleaning liquid from the first ejection unit at a first flow rate and a first processing time, and to eject the cleaning liquid from the second ejection unit at a second flow rate greater than the first flow rate and a second processing time shorter than the first processing time.

[0170] This makes it possible to remove components of the treatment liquid from the incoming exhaust gas. In addition, foreign matter such as crystals attached to the exhaust pipe can be washed away by the cleaning liquid.

[0171] The substrate liquid processing apparatus of the embodiment may also include an acidic tank unit (for example, the acidic tank unit 420A1), an alkali tank unit (for example, the alkali tank unit 420A2), an acidic exhaust pipe (for example, the acidic exhaust pipe 200A1), and an alkali exhaust pipe (for example, the alkali exhaust pipe 200A2). The acidic tank unit includes a liquid receiving tank for receiving the acidic processing liquid among a plurality of liquid receiving tanks. The alkali tank unit includes a liquid receiving tank for receiving the alkali processing liquid among a plurality of liquid receiving tanks. The acidic exhaust pipe includes an exhaust inlet around the acidic tank unit. The alkali exhaust pipe includes an exhaust inlet around the alkali tank unit. The formation of crystals caused by the mixing of the acid component contained in the acidic processing liquid and the alkali component contained in the alkali processing liquid can be suppressed.

[0172] The substrate liquid processing apparatus of the embodiment may also include a nozzle moving mechanism (for example, nozzle moving mechanisms 50, 50B to 50F) that selectively moves a first nozzle for liquid processing among a plurality of first nozzles. Thus, during liquid processing using the first nozzle, nozzle circulation processing for the remaining first nozzles can be continued.

[0173] The nozzle moving mechanism includes an axis portion (for example, the axis portion 56), a driving portion (for example, the driving portion 57), a plurality of arms (for example, the arm 58), and a switching portion (for example, the switching portion 59). The axis portion extends in the vertical direction. The driving portion rotates the axis portion around the vertical axis. The plurality of arms can rotate around the axis portion to respectively hold the plurality of first nozzles at different height positions. The switching portion switches the arm that rotates with the axis portion among the plurality of arms. Thus, the first nozzle for liquid treatment among the plurality of first nozzles can be selectively moved.

[0174] The plurality of liquid receiving tanks (for example, nozzle tank 42D) may also have openings (for example, opening 42D1) at height positions corresponding to the height positions of the corresponding first nozzles. This can prevent components of the processing liquid ejected from the plurality of first nozzles from leaking from the liquid receiving tanks.

[0175] The plurality of first nozzles may respectively eject processing liquids of different temperatures. Even when the plurality of first nozzles are arranged together, the temperature interference between the first nozzles can be suppressed by continuously ejecting the processing liquid from the first nozzles in standby state to the liquid receiving tank.

[0176] As mentioned above, although embodiment of this disclosure was described, this disclosure is not limited to the said embodiment, Various changes can be made within the range which does not deviate from the summary.

[0177] The embodiments disclosed herein are illustrative and not restrictive in all aspects. In fact, the above embodiments can be implemented in various forms. In addition, the above embodiments can be omitted, replaced, and changed in various forms without departing from the claims and their gist.

[0178] Description of Reference Numerals

[0179] 1. Substrate processing system; 3. Processing station; 4. Control device; 18. Control unit; 19. Storage unit; 20. Substrate holding mechanism; 21. Holding unit; 30. Cup; 40. Nozzle circulation system; 41. First nozzle; 42. Nozzle slot; 43. Circulation unit; 50. Nozzle moving mechanism; 60. Second processing liquid supply unit; 61. Second nozzle; W. Wafer.

Claims

1. A substrate liquid processing device, wherein: The substrate liquid processing device comprises: a cup surrounding the periphery of the base plate; A plurality of nozzle circulation systems, comprising a first nozzle, a liquid receiving tank, and a circulation unit, wherein the liquid receiving tank is arranged outside the cup and is used to receive the processing liquid sprayed from the first nozzle, and the circulation unit returns the processing liquid received by the liquid receiving tank to the first nozzle; a second nozzle, which does not constitute the nozzle circulation system; as well as a storage portion for storing the cup, the plurality of first nozzles and the plurality of liquid receiving tanks of the plurality of nozzle circulation systems, and the second nozzle; The second nozzle is arranged between the first side wall of the storage portion and the cup. The plurality of first nozzles are disposed between a second side wall of the housing portion that is different from the first side wall and the cup.

2. The substrate liquid processing device according to claim 1, wherein: The substrate liquid processing device has an exhaust pipe shared by a plurality of the liquid receiving tanks.

3. The substrate liquid processing device according to claim 2, wherein: The substrate liquid processing device comprises a tank unit, wherein the tank unit comprises a plurality of liquid receiving tanks. The exhaust pipe has a plurality of exhaust inlet ports in a portion of the bottom surface of the housing portion around the tank unit.

4. The substrate liquid processing device according to claim 2 or 3, wherein: The substrate liquid processing apparatus includes a cleaning liquid supply unit that supplies cleaning liquid to the interior of the exhaust pipe.

5. The substrate liquid processing device according to claim 4, wherein: The substrate liquid processing device comprises a control unit for controlling the cleaning liquid supply unit. The cleaning liquid supply unit includes a first spraying unit and a second spraying unit for spraying the cleaning liquid. The control unit controls the cleaning liquid supply unit to discharge the cleaning liquid from the first discharge unit at a first flow rate and for a first processing time, and to discharge the cleaning liquid from the second discharge unit at a second flow rate greater than the first flow rate and for a second processing time shorter than the first processing time.

6. The substrate liquid processing device according to claim 1, wherein: The substrate liquid processing device comprises: An acidic tank unit, which has a plurality of liquid receiving tanks for receiving the acidic treatment liquid; An alkali tank unit, comprising a plurality of liquid receiving tanks for receiving the alkali treatment liquid; an acid exhaust pipe having an exhaust inlet around the acid tank unit; as well as The alkali exhaust pipe has an exhaust gas inlet around the alkali tank unit.

7. The substrate liquid processing apparatus according to any one of claims 1 to 3, wherein: The substrate liquid processing apparatus includes a nozzle moving mechanism that selectively moves a first nozzle used for liquid processing among the plurality of first nozzles.

8. The substrate liquid processing device according to claim 7, wherein: The nozzle moving mechanism has: A shaft portion extending in a vertical direction; a driving portion that causes the shaft portion to rotate about a vertical axis; a plurality of arms capable of rotating about the shaft portion and holding the plurality of first nozzles at different height positions; as well as A switching unit switches an arm that rotates together with the shaft unit among the plurality of arms.

9. The substrate liquid processing device according to claim 8, wherein: Each of the plurality of liquid receiving tanks has an opening at a height position corresponding to a height position of the corresponding first nozzle.

10. The substrate liquid processing apparatus according to any one of claims 1 to 3, wherein: The plurality of first nozzles respectively spray processing liquids at different temperatures.

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