A kind of adsorption grabbing device and object surface processing method

Abstract

When the thin object is adsorbed to the adsorption force generating component, the outer edge of the thin object is clamped by the adsorption force, thereby improving the flatness of the thin object in the adsorption state. The adsorption grasping device (A1) includes: a thin object (10); an annular pressing component (20) having a rib (202), wherein the rib (202) presses at least a portion of the outer edge of the surface of the thin object (10); and an adsorption force generating component (30) for adsorbing and grasping the annular pressing component (20). The thin object (10) is grasped by using the adsorption force generating component (30) to adsorb the annular pressing component (20) so as to be sandwiched between the rib (202) and the adsorption force generating component (30).

Description

Technical Field

[0001] The invention relates to an adsorption and grasping device for adsorbing and grasping a thin object and an object surface processing method for processing the object surface in an adsorption and grasping state. Background Art

[0002] In the past, a wafer surface protection tape peeling device was known, in which a suction cup for fixing a wafer mounted in an annular frame by vacuum adsorption is provided with a dicing tape and a mask plate covering the surface of the annular frame at front and rear positions relative to the sticking direction of the stripping tape of the suction cup, and can be freely swung up and down; between the supply part and the winding part of the stripping tape, after the stripping tape is stuck to the surface protection tape, a stripping unit is provided for stripping the protection tape from the surface of the wafer. The stripping unit is used to make the protective tape stripping angle of the stripping tape an acute angle while stripping the surface protection tape of the wafer. By covering the wafer fixed by vacuum adsorption with the surface protection tape, the thin wafer is reinforced to resist the vibration and external force acting when moving between processes, and to prevent the generation of cracks and microcracks (for example, see patent document 1).

[0003] On the other hand, an electrostatic chuck using Coulomb force is known as a gripping method for gripping a wafer. In the case of an electrostatic chuck, the electrostatic chuck performs a support function for the wafer by adsorbing and gripping the entire wafer as a whole, and strengthens protection against vibration and external forces acting during movement between processes and during processing, preventing the generation of cracks and microcracks (for example, see Patent Document 2).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2001-319906

[0007] Patent Document 2: Japanese Patent Application Publication No. 2006-269826 Summary of the invention

[0008] Technical problem to be solved by the invention

[0009] However, in the prior art described in the above-mentioned patent documents 1 and 2, the adsorption force acts only on the adsorption surface of the thin object. Therefore, for example, when a thin object is adsorbed by an electrostatic chuck, if the peeling phenomenon causes peeling around it, and the peeling expands into warping, the warping of the thin object cannot be corrected. Furthermore, if warping occurs due to the difference in thermal expansion coefficients of two different materials when the thin object is subjected to film forming processing, there is a problem that the warping cannot be corrected.

[0010] The present invention is completed with an eye to the above-mentioned problems, and its purpose is to improve the flatness of the thin object in the adsorbed state by clamping the outer edge of the thin object by the adsorption force when the adsorption force generating component adsorbs the thin object.

[0011] Technical solutions to the problem

[0012] In order to achieve the above-mentioned purpose, the adsorption and grasping device of the present invention includes: a thin object; an annular pressing component having ribs, wherein the ribs press at least a part of the outer edge of the surface of the thin object; and an adsorption force generating component for adsorbing and grasping the annular pressing component.

[0013] Furthermore, the thin object is grasped by adsorbing the annular pressing member using the adsorption force generating member so as to be sandwiched between the rib and the adsorption force generating member.

[0014] Technical Effects

[0015] As a result of adopting the above-mentioned means for solving the problem, when the thin object is adsorbed onto the adsorption force generating component, the outer edge of the thin object is clamped by the adsorption force, so that the flatness of the thin object in the adsorbed state can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 1 is a top view showing the suction grasping device A1 of the first embodiment.

[0017] Figure 2 1 is a longitudinal sectional view showing the suction gripping device A1 of the first embodiment.

[0018] Figure 3 It is a detailed diagram showing the enlarged structure of the suction gripping device A1 of Example 1 and the suction force control unit.

[0019] Figure 4 This is an explanatory diagram showing the principle of electrostatic adsorption force generated by an electrostatic chuck.

[0020] Figure 5 This is a diagram for explaining the operation of generating electrostatic adsorption force by applying voltage to electrodes and restoring to the original state by cutting off the voltage from the electrodes.

[0021] Figure 6 1 is an explanatory diagram of an object surface processing method, and shows a surface film forming processing example, which is an example of surface processing using the thin object grasping unit U1 of the first embodiment.

[0022] Figure 7 This is an explanatory diagram showing the effect of adsorption on a thin object with warping in a precedent.

[0023] Figure 8 This is an explanatory diagram showing the effect of adsorption on a thin object having a warp in Example 1.

[0024] Fig. 9 It is a top view showing the suction grasping device A2 of the second embodiment.

[0025] Fig.10 It is a longitudinal sectional view showing the suction grasping device A2 of the second embodiment.

[0026] Fig.11 1 is a top view showing a suction gripping device A3 according to the third embodiment.

[0027] Fig.12 1 is a longitudinal sectional view showing a suction gripping device A3 according to the third embodiment.

[0028] Fig.13 It is an enlarged cross-sectional view showing the suction grasping device A4 of the fourth embodiment. DETAILED DESCRIPTION

[0029] Hereinafter, embodiments for implementing the adsorption and grasping device and the object surface processing method according to the present invention will be described based on Embodiments 1 to 4 shown in the drawings.

[0030] Example 1

[0031] The adsorption grasping device and the object surface processing method in Example 1 are applied to a semiconductor manufacturing device group, which uses a wafer of an IC chip (semiconductor integrated circuit) material as a thin object, applies circuit patterns such as micro wiring and components to the object surface in the adsorption state through various surface processing to manufacture a single semiconductor chip (screw, die). The "structure of the adsorption grasping device A1" and the "object surface processing method" are described below.

[0032] Structure of the suction grabbing device A1 ( Figure 1 to Figure 4 )

[0033] like Figure 1 to Figure 3 As shown, the adsorption grasping device A1 includes: a thin object 10, a ring-shaped pressing component 20, an adsorption force generating component 30 and an adsorption force control unit 40.

[0034] The thin object 10 is a circular thin plate object with a thickness of less than 0.5 mm. A typical object is a "wafer", which is a circular thin plate made of semiconductor material crystal. Among them, in addition to the most common silicon wafer, "wafer" also includes silicon carbide wafers, sapphire wafers, compound semiconductor wafers (gallium phosphide wafers, gallium arsenide wafers, indium phosphite wafers, gallium nitride wafers, etc.). Furthermore, "wafer" also includes glass wafers used as supporting substrates.

[0035] like Figure 3 As shown, the annular pressing member 20 integrally includes an annular adsorption portion 201 and a rib 202. In the annular adsorption portion 201, the adsorption lower surface 20a on the annular plane is adsorbed and fixed on the adsorption force generating member 30 by electrostatic adsorption force. The rib 202 is formed to protrude in the inner diameter direction from the entire peripheral portion of the upper inner surface of the annular adsorption portion 201, and the entire outer edge portion of the surface 10a of the thin object 10 is pressed by the pressing lower surface 20b of the annular plane. The inner protruding end surface 20c of the rib 202 is a circular end surface whose outer diameter is slightly smaller than the outer diameter of the thin object 10, as shown in FIG. Figure 1 As shown, in the surface area of ​​the thin object 10 , the circular area inside the inner protruding end surface 20 c (the area excluding the pressed lower surface 20 b ) becomes the processed surface MS1 (hatched area) for the thin object 10 .

[0036] Among them, the adsorption width of the adsorption lower surface 20a is formed to be, for example, a width of about 5mm to 10mm, and the pressing width of the pressing lower surface 20b is formed to be, for example, a width of about 1mm to 2mm. In addition, the height difference of the height difference surface 20d between the annular adsorption portion 201 and the rib portion 202 is formed to correspond to the thickness of the thin object 10 and be substantially the same as the thickness. In addition, since the adsorption force generating component 30 is a component that generates adsorption force using an electrostatic field, the material of the annular pressing component 20 has the advantage of allowing the use of any material such as a conductor, a semiconductor, an insulator, etc. For example, an insulating material such as a reinforced plastic material can also be used as long as it is a material with a specified strength.

[0037] The adsorption force generating component 30 generates adsorption force by utilizing an electrostatic field, and has the function of generating adsorption force for adsorbing and grasping the thin object 10 and the annular pressing component 20 together. Figure 3 As shown, the adsorption force generating component 30 is composed of: an electrical insulating layer 301, electrostatically adsorbing the thin object 10 and the annular pressing component 20; electrode element groups 302 and 303, buried in the electrical insulating layer 301, with positive electrodes and negative electrodes alternately arranged; a substrate 304, relative to the electrode element groups 302 and 303, located on the surface opposite to the electrical insulating layer 301.

[0038] The outer diameter of the adsorption force generating component 30 is larger than the outer diameter of the thin object 10. Figure 3 As shown in FIG. 1 , the area of ​​the object grabbing area having the same size as the thin object 10 and the outer enlarged area added thereto is set as the electrostatic adsorption force Fa, Fb generating area. Figure 3As shown, the annular pressing member 20 is grasped in the outer expanded area of ​​the adsorption force generating member 30 by using the electrostatic adsorption force Fa, so that the entire outer edge of the thin object 10 is sandwiched between the rib 202 of the annular pressing member 20 and the adsorption force generating member 30. At the same time, the entire adsorption surface 10b of the thin object 10 is adsorbed and grasped by the electrostatic adsorption force Fb in the object grasping area of ​​the adsorption force generating member 30. In addition, the entire surface of the plane 301a on the object side of the electrical insulating layer 301 is the electrostatic adsorption force generating surface of the area where the outer expanded area is added to the object grasping area.

[0039] like Figure 3 As shown, the adsorption force control unit 40 is configured to be connectable to / disconnectable from the electrode element groups 302 and 303 included in the adsorption force generating unit 30. The adsorption force control unit 40 is connected to the electrode element groups 302 and 303, and controls the generation / disappearance of the electrostatic adsorption forces Fa and Fb. When the electrostatic adsorption force is generated, even if the adsorption force control unit 40 is disconnected from the electrode element groups 302 and 303, the generation of the electrostatic adsorption forces Fa and Fb is maintained by the charge accumulated in the adsorption force generating unit 30. That is, the adsorption force control unit 40 is not always connected to the electrode element groups 302 and 303 by wires or the like, but is wirelessly disconnected from the adsorption force generating unit 30 when the charge is accumulated in the adsorption force generating unit 30.

[0040] In the case of wireless mode, when the thin object 10 and the annular pressing member 20 are adsorbed, the adsorption force control unit 40 is connected to the adsorption force generating member 30, and the thin object 10 and the annular pressing member 20 are electrostatically adsorbed by applying voltage to the electrode element groups 302 and 303. And, the method of use is that after confirming the generation of the electrostatic adsorption forces Fa and Fb, the adsorption force control unit 40 is disconnected from the adsorption force generating member 30, and the generation of the electrostatic adsorption forces Fa and Fb is maintained by the charge accumulated in the adsorption force generating member 30.

[0041] like Figure 3 As shown, the adsorption force control unit 40 comprises: a first switch SW1, for controlling the conduction between the electrode element group 302 and the ground; a second switch SW2, for controlling the voltage applied to the electrode element group 302; a third switch SW3, for controlling the voltage applied through the second switch SW2 and the application of the reverse polarity voltage; a fourth switch SW4, for controlling the conduction between the electrode element group 303 and the ground; a fifth switch SW5, for controlling the voltage applied to the electrode element group 303; and a sixth switch SW6, for controlling the voltage applied through the fifth switch SW5 and the application of the reverse polarity voltage.

[0042] In the initial state, all switches SW1, SW2, SW3, SW4, SW5, and SW6 of the adsorption force control unit 40 are turned off. When the electrostatic adsorption force is generated, the adsorption force control unit 40 is connected to the adsorption force generating part 30, and after the electrostatic adsorption force is generated by performing on / off control of each switch, the adsorption force control unit 40 is disconnected from the adsorption force generating part 30. Thereafter, when the electrostatic adsorption force is released, the adsorption force control unit 40 is connected to the adsorption force generating part 30 again, and the electrostatic adsorption force is released by performing on / off control of each switch.

[0043] Next, based on Figure 4 as well as Figure 5 The generation principle of the electrostatic adsorption forces Fa and Fb in the adsorption force generating component 30 is described below. The adsorption force generating component 30 used in Example 1 is an example of an "electrostatic chuck" that electrostatically adsorbs an object by Coulomb force. The principle of the electrostatic adsorption force generated by this "electrostatic chuck" is as follows: Figure 4 As shown, when a voltage is applied to the electrodes, the surface of the guest causes surface polarization. Among them, negative surface polarization is induced on the surface portion of the guest opposite to the electrode portion to which the positive voltage is applied. In addition, positive surface polarization is induced on the surface portion of the guest opposite to the electrode portion to which the negative voltage is applied. Then, due to the arc-shaped current flowing from the positive electrode through the surface of the guest to the negative electrode, an electrostatic field is formed between the electrode surface and the guest surface, and an electrostatic adsorption force is generated according to the electrostatic field, adsorbing the guest to the surface of the insulating layer.

[0044] And, when the electrostatic adsorption force is released, as Figure 5 As shown, when the operation of cutting off the voltage applied to the electrode is performed, the guest returns to its original state (the state where the electrostatic chuck is separated from the guest) and no charge is provided to the guest. In addition, the reason why the charge is not provided to the guest by cutting off the voltage applied to the electrode is that by applying the voltage, an electrostatic adsorption force is caused in the surface polarization of the guest, so if the voltage applied to the electrode is cut off, the surface polarization of the guest also disappears.

[0045] Object surface processing method ( Figure 6 )

[0046] As described above, the adsorption force generating component 30 is a wireless method to disconnect the adsorption force control unit 40 from the adsorption force generating component 30, so that the adsorption grasping device A1 can be put into the surface processing device in a unit state of independent transfer while maintaining the state of adsorbing the thin object 10. The object surface processing method is executed by putting it into the surface processing device. Figure 6 A vacuum film forming processing example will be described, which is an example of surface processing using the thin object grasping unit U1.

[0047] The object surface processing method using the adsorption gripping device A1 that sandwiches the thin object 10 between the rib 202 of the annular pressing member 20 and the adsorption force generating member 30 includes: a processing device transfer step, a film forming processing step, and a device external transfer step.

[0048] like Figure 6 As shown in (a), in the processing device transfer step, the thin object grasping unit U1 composed of the thin object 10, the annular pressing member 20, and the suction force generating member 30 is transferred to the inside of the coating device 50 (surface processing device) for realizing surface film formation.

[0049] The coating device 50 is, for example, a coating device using a vapor deposition method, wherein a vacuum container 51 is evacuated, an evaporation source 52 is disposed at a lower position in the vacuum container 51 , and an object is disposed at a position opposite to the upper portion of the evaporation source 52 .

[0050] like Figure 6 As shown in (b), in the film forming process step, when the thin object grabbing unit U1 is assembled at the internal processing position of the film laminating device 50, the surface 10a of the thin object 10 except the rib 202 is used as the processing surface MS1 (refer to Figure 1 ) for film forming processing.

[0051] The film forming process refers to, for example, heating, dissolving and evaporating the thin film material in a vacuum in an evaporation source 52 in a vacuum container 51 , so that the thin film material composed of evaporated particles adheres to the surface of the thin object 10 .

[0052] like Figure 6 As shown in (c), in the device external transfer step, when the film forming process is completed, the thin object grasping unit U1 is removed from the internal processing position of the coating device 50 while still grasping the film-processed thin object 10, and is transferred to the outside of the coating device 50.

[0053] Among them, after being transferred to the outside of the coating device 50, the film-processed thin object 10 is separated from the adsorption force generating component 30 and taken out from the thin object grabbing unit U1, the adsorption force control unit 40 is connected to the external transfer destination, and the electrostatic adsorption forces Fa and Fb are released. On the other hand, when the film processing is a processing process that is part of the continuous surface processing, the thin object grabbing unit U1 is transferred as it is to the next surface processing device installed outside the coating device 50. In addition, if the next surface processing device is located on the surface opposite to the film processing surface, the electrostatic adsorption forces Fa and Fb are released, the front and back of the thin object 10 are turned over, and then the electrostatic adsorption forces Fa and Fb are generated again, the thin object 10 is electrostatically adsorbed, and the back of the thin object 10 is film-processed.

[0054] As described above, the object surface processing method aims to perform surface processing on the thin object 10 with guaranteed straightness by using the thin object grasping unit U1 composed of the thin object 10, the annular pressing member 20, and the adsorption force generating member 30. Therefore, the surface processing device is not limited to the coating device 50 for realizing surface film formation, and it is self-evident that the surface processing device includes a plasma etching device for realizing surface etching processing installed in the manufacturing process of a semiconductor device, an ion implantation device for realizing ion implantation processing, and the like.

[0055] Among them, "plasma etching device" refers to a device that performs etching processing on thin objects 10 in low-temperature gas plasma to make microcircuits such as semiconductor integrated circuits. "Ion implantation device" refers to a processing device that implants ions of materials into solid thin objects 10, such as implanting dopants into semiconductors. Even in the case of these etching processes and ion implantation processes, the object surface processing method includes: a processing device transfer step, a film forming process step, and a device external transfer step, as in the vacuum film forming process.

[0056] Next, the “background art and technical problem solution” will be described. Then, the “characteristic function of the suction gripping device A1” in the first embodiment will be described.

[0057] Background technology and technical problem solutions ( Figure 7 , Figure 8 )

[0058] For example, when an electrostatic chuck is used to adsorb a thin object, peeling occurs along the outer edge of the line outside the electrode configured in a straight line, causing peeling, and the peeling that occurs expands into warping. In addition, when a thin object is subjected to film forming processing, due to the difference in thermal expansion coefficients of two different materials, warping will occur when it is adsorbed to the electrostatic chuck. Furthermore, for example, when a glass wafer on which a film has been formed is used as a thin object, it becomes a pre-warped object before being adsorbed by the electrostatic chuck. Even attempts to correct the warping of these thin objects require a strong force that can counteract the warping force, such as Figure 7 As shown, even under the action of the electrostatic adsorption force of the electrostatic chuck, warping will remain in the outer edge area where the force relationship is electrostatic adsorption force < warping force, which makes it difficult to correct the warping of a thin object.

[0059] In recent years in particular, communication speeds and corresponding equipment have evolved from 3G to 4G, and then from 4G to 5G (in addition, 5G is the abbreviation of the fifth generation mobile communication system "5th Generation") in the form of "mobile communication systems". In addition, in inverters, insulated gate bipolar transistors (IGBTs) used as switching elements are also moving towards miniaturization. With these developments, the thinning of objects that require precision processing has progressed, and it has become essential to correct thin objects with large warping (for example, 20 mm of warping in a thickness of 200 μm). That is, an effective solution that can correct the warping of thin objects is needed.

[0060] Based on the verification of the solution to the above problems and requirements, the inventors of the present invention focused on adsorbing the thin object to the outer area of ​​the adsorption area of ​​the electrostatic chuck, and conducted an experiment of electrostatically adsorbing the pressing component using the outer area. Through this experiment, it was confirmed that the necessary and sufficient electrostatic adsorption force can be generated on the pressing component, and if the edge of the thin object is pressed by the rib of the pressing component with sufficient strength, the thin object can be prevented from peeling off.

[0061] Based on the findings according to the above experiments, the suction gripping device A1 disclosed in the present invention includes: a thin object 10; an annular pressing member 20 having a rib 202, wherein the rib 202 presses at least a portion of the outer edge of the surface of the thin object 10; and an adsorption force generating member 30, which adsorbs and grips the annular pressing member 20. In addition, the following solution is adopted: the thin object 10 is gripped by using the adsorption force generating member 30 to adsorb the annular pressing member 20, and the thin object 10 is gripped in a manner of being sandwiched between the rib 202 and the adsorption force generating member 30.

[0062] For example, in the case of a pre-warped thin object 10, as Figure 8 As shown, the warped end of the warped thin object 10 is engaged with the rib 202 of the annular pressing member 20, and the annular pressing member 20 is pushed into the annular pressing member 20 and adsorbed on the adsorption force generating member 30. As a result, an electrostatic adsorption force Fa is generated on the annular pressing member 20 as an adsorption force, as shown in FIG. Figure 2 As shown, the thin object 10 is grasped by being sandwiched between the rib 202 and the adsorption force generating member 30 .

[0063] Therefore, in the case of the thin object 10 that is pre-warped, when the annular pressing member 20 is adsorbed to the adsorption force generating member 30, the warping generated in the thin object 10 is corrected by the adsorption force (electrostatic adsorption force Fa) by sandwiching the outer edge end of the thin object 10. In addition, even if warping is about to occur from the outer peripheral edge portion of the thin object 10 adsorbed on the adsorption force generating member 30, the annular pressing member 20 that generates the adsorption force (electrostatic adsorption force Fa) sandwiches the edge portion of the thin object 10 and keeps gripping, so that the occurrence of warping itself can be prevented.

[0064] As a result, when the thin object 10 is adsorbed to the adsorption force generating component 30, the outer edge of the thin object 10 is clamped by the adsorption force (electrostatic adsorption force Fa), so that the flatness of the thin object 10 in the adsorption state can be improved. In addition, by correcting the warping of the thin object 10 to improve the flatness, the film thickness accuracy of the vacuum film can be improved. Furthermore, by clamping and grasping the thin object 10 with the annular pressing component 20, cracks and breakages caused by thermal deformation of the thin object 10 during the high temperature process of the film forming and thermal processing process can be prevented.

[0065] Characteristic function of suction gripping device A1 ( Figure 1 to Figure 3 )

[0066] The suction force generating member 30 of the first embodiment sets the object grabbing region plus the outer extension region as the suction force generating region, and simultaneously sucks and grabs the annular pressing member 20 in the outer extension region and sucks and grabs the suction surface of the thin object 10 in the object grabbing region.

[0067] That is, Figure 3 As shown, the annular pressing member 20 is adsorbed and captured in the outer expanded area of ​​the adsorption force generating member 30 by the adsorption force (electrostatic adsorption force Fa). At the same time, the adsorption surface 10b of the thin object 10 is adsorbed and captured in the object capture area of ​​the adsorption force generating member 30 by the adsorption force (electrostatic adsorption force Fb). Therefore, the warping can be corrected by sandwiching the thin object 10 with the annular pressing member 20, but at the same time, the warping of the thin object 10 with a larger warping can also be corrected by adsorption (electrostatic adsorption). In addition, when the thin object 10 is adsorbed (electrostatic adsorption), the straightness of the thin object 10 can be further improved compared to sandwiching the thin object 10 with only the annular pressing member 20, and the film thickness accuracy of the vacuum film formation can be further improved.

[0068] In Example 1, a thin plate-shaped object with a thickness of 0.5 mm or less is used as the thin object 10. Thus, as the thinning of objects requiring precision processes progresses, wafers such as silicon wafers and glass wafers, which have become indispensable for warpage correction, can be included in the thin object 10.

[0069] In the first embodiment, the attraction force generating member 30 has the electrode element groups 302 and 303 buried in the electrical insulating layer 301 , and is used as a member that generates an attraction force using an electrostatic field.

[0070] That is, the thin object 10 used in the high-temperature process of the vacuum film forming and thermal processing technology is a non-magnetic material such as a silicon wafer or a glass wafer. Therefore, the adsorption and grasping device A4 using a magnetic field described later cannot adsorb the thin object 10. In this regard, if the adsorption force generating component 30 is used as a component that generates the adsorption force using an electrostatic field, it does not matter what the material of the thin object 10 or the annular pressing component 20 is. Therefore, the adsorption and grasping device A1 using an electrostatic field can adsorb the thin object 10 and the annular pressing component 20 at the same time, and can improve the flatness of the thin object 10 compared to the adsorption and grasping device A4 using a magnetic field described later.

[0071] In the first embodiment, an adsorption force control unit 40 is provided, which can be connected to / disconnected from the electrode element groups 302 and 303 of the adsorption force generating member 30. In addition, the adsorption force control unit 40 is wireless, and is connected to the adsorption force generating member 30 when the annular pressing member 20 is adsorbed, and is disconnected from the adsorption force generating member 30 after the annular pressing member 20 is adsorbed.

[0072] That is, if a wired method is adopted in which the adsorption force control unit is always connected to the electrode element group of the adsorption force generating component, a complex structure is required to continuously apply voltage when being transferred to the surface processing device and when being set in the surface processing device, and high temperature durability is also required. In contrast, if a wireless method is adopted in which the adsorption force control unit 40 is disconnected from the adsorption force generating component 30, an independent thin object grasping unit U1 consisting of the thin object 10, the annular pressing component 20, and the adsorption force generating component 30 is formed, and it can be easily transferred and installed on the surface processing device.

[0073] As described above, the adsorption and grasping device A1 and the object surface processing method of Example 1 have the following effects:

[0074] (1) comprising: a thin object 10;

[0075] An annular pressing member 20 having a rib 202, wherein the rib 202 presses at least a portion of the outer edge of the surface of the thin object 10;

[0076] An adsorption force generating component 30, which adsorbs and grasps the annular pressing component 20;

[0077] The annular pressing member 20 is sucked by the suction force generating member 30 , so that the thin object 10 is grasped in a manner of being sandwiched between the rib 202 and the suction force generating member 30 .

[0078] Therefore, when the thin object 10 is adsorbed to the adsorption force generating member 30, the outer edge of the thin object 10 is clamped by the adsorption force, so that the flatness of the thin object 10 in the adsorption state can be improved. In addition, with the improvement of the flatness of the thin object 10, for example, the film thickness accuracy of vacuum film formation can be improved, and cracks and breakages of the thin object 10 caused by thermal deformation under high temperature processes of film formation and thermal processing can be prevented.

[0079] (2) In the suction force generating member 30, the area of ​​the object grasping area plus the outer enlarged area is set as the suction force generating area,

[0080] While the annular pressing member 20 is sucked and grasped in the outer enlarged area, the suction surface 10 b of the thin object 10 is sucked and grasped in the object grasping area.

[0081] Therefore, the warping of the thin object with a large warping can be corrected, and the straightness of the thin object 10 can be further improved compared to simply sandwiching the thin object 10 with the annular pressing member 20. In addition, by further improving the straightness of the thin object 10, for example, the film thickness accuracy of vacuum film formation can be improved compared to simply sandwiching the thin object 10 with the annular pressing member 20.

[0082] (3) A thin plate-shaped object with a thickness of 0.5 mm or less is used as the thin object 10 .

[0083] Therefore, as the thinning of objects requiring precision processes progresses, wafers such as silicon wafers and glass wafers, for which warpage correction has become indispensable, can be included in the thin object 10 .

[0084] (4) The attraction force generating member 30 has the electrode element groups 302 and 303 buried in the electrical insulating layer 301 and is used as a member that generates an attraction force using an electrostatic field.

[0085] Therefore, the adsorption and grasping device A1 using an electrostatic field can simultaneously adsorb the thin object 10 and the annular pressing member 20, and can improve the flatness of the thin object 10 compared to the adsorption and grasping device A4 using a magnetic field described later.

[0086] (5) providing an adsorption force control unit 40 that can be connected to / disconnected from the electrode element groups 302 and 303 of the adsorption force generating member 30,

[0087] The suction force control unit 40 is a wireless system, and is connected to the suction force generating member 30 when the annular pressing member 20 is suctioned, and is disconnected from the suction force generating member 30 after the annular pressing member 20 is suctioned.

[0088] Therefore, the independent thin object clamping unit U1 consisting of the thin object 10, the annular pressing member 20, and the adsorption force generating member 30 can be easily transferred and installed on the surface processing device.

[0089] (6) A method for processing the surface of an object, which uses an adsorption gripping device A1 that clamps a thin object 10 between the rib 202 of the annular pressing member 20 and the adsorption force generating member 30;

[0090] The thin object grabbing unit U1 composed of the thin object 10, the annular pressing member 20, and the adsorption force generating member 30 is transferred to the surface processing device (film coating device 50);

[0091] When the thin object grabbing unit U1 is assembled at the internal processing position of the surface processing device, the surface 10a of the thin object 10 except the rib 202 is subjected to surface processing (film forming processing) as the processing surface MS1;

[0092] When the surface processing is completed, the thin object grabbing unit U1 is removed from the internal processing position of the surface processing apparatus while still grabbing the surface-processed thin object 10 , and is transferred to the outside of the surface processing apparatus.

[0093] Therefore, by using the independent thin object grasping unit U1 composed of the thin object 10, the annular pressing member 20, and the suction force generating member 30, the processing surface MS1 of the thin object 10 with guaranteed straightness can be subjected to necessary surface processing with high precision.

[0094] (7) The surface processing device is a coating device 50 that realizes surface film formation.

[0095] Therefore, by using the thin object grasping unit U1 , it is possible to realize surface film formation with high film thickness accuracy on the processing surface MS1 of the thin object 10 with secured flatness.

[0096] (8) The surface processing device is a plasma etching device that performs surface etching processing.

[0097] Therefore, by using the thin object grasping unit U1 , it is possible to realize high-precision and precise surface etching processing on the processing surface MS1 of the thin object 10 with secured flatness.

[0098] (9) The surface processing device is an ion implantation device for performing ion implantation processing.

[0099] Therefore, by using the thin object grabbing unit U1 , it is possible to implement ion implantation processing with high implantation position accuracy on the processing surface MS1 of the thin object 10 with secured flatness.

[0100] Example 2

[0101] Embodiment 2 is an example in which the suction gripping device A2 is used as the annular pressing member 20 , and the suction gripping device A2 has a rib 202 ′ that presses a portion of the outer edge of the surface of the thin object 10 .

[0102] like Fig. 9 as well as Fig.10 As shown, the annular pressing member 20 of the second embodiment has four ribs 202' formed so as to protrude in the inner diameter direction at four positions arranged at 90 degrees from the upper surface of the annular adsorption portion 201. Fig. 9 As shown, through the four ribs 202', the surface area of ​​the thin object 10 except the four ribs 202' can become the processing surface MS2 (hatched area) for the thin object 10. In addition, since other structures are the same as those in the first embodiment, the description will be omitted.

[0103] Therefore, the adsorption grasping device A2 of Example 2 is very useful when applied to a thin object 10 as described below: the warping of the outer edge portion can be corrected by partial clamping, and the processing surface MS2 can be expanded to be larger than the processing surface MS1 of Example 1.

[0104] In addition, the example of four ribs 202' formed so as to protrude in the inner diameter direction at four equal angles is shown in Example 2. However, the ribs 202' may be formed so as to protrude in the inner diameter direction at two or more positions, and are not limited to being formed at four positions.

[0105] Example 3

[0106] Embodiment 3 is an example of a suction gripping device A3, in which a square thin object 10' is used as the thin object, and a ring-shaped pressing member 20' having a shape different from that of Embodiments 1 and 2 is used according to the shape of the thin object 10'.

[0107] The thin objects 10' are rectangular in shape, and a total of six are arranged inside the circular area of ​​the annular pressing member 20'. Fig.11 Three are arranged in the vertical direction, and Fig.11 There are two rows horizontally, for a total of six.

[0108] like Fig.11 as well as Fig.12As shown, the annular pressing component 20' integrally has a square window adsorption portion 203 and a square rib 204. The square window adsorption portion 203 forms square opening windows 203a at six locations corresponding to the thin object 10'. The disc-shaped adsorption lower surface 20e other than the square opening windows 203a is adsorbed and fixed to the adsorption force generating component 30 by electrostatic adsorption force. The square rib 204 is formed in a manner of protruding from the entire peripheral portion of the upper portion of the inner surface of each square opening window 203a in the inner diameter direction, and the square rib 204 presses the entire outer edge portion of the surface of the thin object 10'. And, as shown Fig.11 As shown, in the surface area of ​​the thin object 10', the area other than the square ribs 204 becomes the processing surface MS3 (hatched area) for the thin object 10'. In addition, since the other structures are the same as those in the embodiment 1, the description will be omitted.

[0109] Therefore, the adsorption grasping device A3 of the third embodiment is applicable to the case where the size of the adsorption force generating component 30 allowed in the vacuum film forming or high temperature process device is larger than the size of the thin object 10'. In addition, in the adsorption grasping device A3, since the adsorption area of ​​the annular pressing component 20' for electrostatic adsorption can be ensured to be much larger than that of the first and second embodiments, the large warping of the thin object 10' can be corrected by the annular pressing component 20'.

[0110] In addition, when correcting a large warpage of the thin object 10', the shape of the thin object 10' (eg, Fig.11 as well as Fig.12 rectangles shown) and the number of thin objects 10' (e.g., Fig.11 as well as Fig.12 Therefore, the shape of the thin object 10' is not limited to a rectangle, but may be a circle or a polygon. In addition, the number of the thin objects 10' is not limited to six, as long as the number is two or more.

[0111] Example 4

[0112] Example 4 is an example of an adsorption grasping device A4 in which a member that generates an adsorption force using a magnetic field is used as an adsorption force generating member 30 ′.

[0113] like Fig.13 As shown, the adsorption force generating member 30' is a permanent magnet or an electromagnet that generates adsorption force by using a magnetic field. Also, the annular pressing member 20 is a member made of a magnetic material. In addition, since the other structures are the same as those in the first embodiment, the description will be omitted.

[0114] Therefore, in the suction gripping device A4 of the fourth embodiment, the magnetic field generated between the suction force generating member 30 ′ and the annular pressing member 20 is used to suction the annular pressing member 20 by the magnetic force Fc, thereby correcting the warping of the thin object 10 .

[0115] As described above, the suction gripping device A4 of the fourth embodiment has the following effects in addition to the effects (1) to (3) of the first embodiment.

[0116] (10) The attraction force generating member 30 ′ is used as a member that generates an attraction force using a magnetic field, and the annular pressing member 20 is used as a member made of a magnetic material.

[0117] Therefore, by using a magnetic field to magnetically attract the annular pressing member 20 to correct the warping of the thin object 10, the straightness of the thin object 10 can be ensured. In addition, in the adsorption and grasping device A4, the effects (6) to (9) of the object surface processing method of Example 1 can also be obtained.

[0118] The above description of the suction and gripping device and the object surface processing method of the present invention is based on Examples 1 to 4. However, the specific structure is not limited to these Examples, and design changes and structural additions can be made as long as they do not deviate from the gist of the invention of each claim.

[0119] In Examples 1 to 4, an example in which a wafer to be a material of an IC chip (semiconductor integrated circuit) is used as the thin object 10, 10' is shown. However, the thin object is not limited to a wafer, and may be, for example, an example of a thin film in which warping is a problem, and further, may be a thin object other than a wafer or a thin film in which warping is a problem.

Claims

1. An adsorption grabbing device, characterized in that: include: Thin objects, an annular pressing member having a rib, wherein the rib presses at least a portion of the outer edge of the surface of the thin object, An adsorption force generating component for adsorbing and grasping the annular pressing component; The thin object is grasped by using the adsorption force generating member to adsorb the annular pressing member so as to be sandwiched between the rib and the adsorption force generating member. The adsorption force generating component has an electrode element group buried inside the electrical insulating layer and is used as a component that generates adsorption force using an electrostatic field. An adsorption force control unit is provided, the adsorption force control unit can be connected to / disconnected from the electrode element group of the adsorption force generating member, The suction force control unit is wireless, and is connected to the suction force generating member when the annular pressing member is suctioned, and is disconnected from the suction force generating member after the annular pressing member is suctioned.

2. The adsorption grabbing device according to claim 1, characterized in that: In the suction force generating component, an area in the object grabbing area to which the outer enlarged area is added is set as the suction force generating area, While the annular pressing member is sucked and grasped in the outer enlarged area, the suction surface of the thin object is sucked and grasped in the object grasping area.

3. The adsorption grabbing device according to claim 1 or 2, characterized in that: The thin object is a thin plate-shaped object with a thickness of 0.5 mm or less.

4. A method for processing the surface of an object, using the adsorption and grasping device according to any one of claims 1 to 3, characterized in that: Transferring the thin object grabbing unit composed of the thin object, the annular pressing component, and the adsorption force generating component to the surface processing device; When the thin object grabbing unit is assembled at the inner processing position of the surface processing device, the surface of the thin object is processed by using the area other than the rib as the processing surface; When the surface processing is completed, the thin object grabbing unit is removed from an internal processing position of the surface processing device while still grabbing the thin object whose surface processing has been completed, and is transferred to the outside of the surface processing device.

5. The object surface processing method according to claim 4, characterized in that: The surface processing device is a coating device for realizing surface film formation.

6. The object surface processing method according to claim 4, characterized in that: The surface processing device is a plasma etching device for realizing surface etching processing.

7. The object surface processing method according to claim 4, characterized in that: The surface processing device is an ion implantation device for implementing ion implantation processing.

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