Method for forming semiconductor structure

By using selective deposition process and ion implantation process in semiconductor structures, the problem of poor semiconductor structure performance in the prior art is solved, and higher density and lower density are achieved etching damage improves overall performance.

CN114765127BActive Publication Date: 2024-12-24SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information

Application Number
CN202110057743.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-01-15
Publication Date
2024-12-24
Estimated Expiration
2041-01-15

AI Technical Summary

Technical Problem

The performance of the existing semiconductor structure is poor and it is difficult to effectively improve through the existing technology.

Method used

The plug material layer is formed on the substrate by selective deposition process, and the gap between the plug material layer and the dielectric layer is reduced through the ion implantation process. Combined with repair and bombardment treatment, we ensure the selectivity and tightness of the subsequent deposition process. , avoid etching damage to the conductive layer.

Benefits of technology

It effectively improves the performance of the semiconductor structure, reduces the etching damage of the conductive layer, enhances the density and selectivity of the film layer, reduces the grinding time, and improves the overall performance.

✦ Generated by Eureka AI based on patent content.

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Abstract

A method for forming a semiconductor structure includes: providing a substrate, wherein the substrate has a first conductive layer; forming a first dielectric layer on the substrate, wherein the first dielectric layer has a first opening, and the first opening exposes the first conductive layer; using a first selective deposition process to form a first plug material layer in the first opening, and the top surface of the first plug material layer is lower than the top surface of the first dielectric layer; after forming the first plug material layer, performing an ion implantation process on the first dielectric layer to reduce the gap between the first plug material layer and the first dielectric layer; after the ion implantation process, performing a repair process on the exposed surface of the first dielectric layer; after the repair process, using a second selective deposition process to form a second plug material layer on the surface of the first plug material layer in the first opening, and the second plug material layer fills the first opening. The semiconductor structure formed by the method has good performance.
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Citation Information

Patent Citations

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  • Semiconductor structure and method for forming same

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