Semiconductor process apparatus and process chamber therefor

Abstract

Embodiments of the present application provide a semiconductor process equipment and a process chamber thereof. The process chamber comprises a process tube, a chamber assembly and an exhaust device. The chamber assembly is arranged in the process tube, and two ends of the chamber assembly are respectively formed with a transmission port and an exhaust port. The exhaust device is arranged in the process tube and located at one side of the exhaust port. A housing of the exhaust device is provided with a guide inlet and a guide outlet. The guide inlet is in communication with one end of a fluid channel. The fluid channel forms a first preset angle with the vertical direction. The other end of the fluid channel is in communication with a buffer cavity. The buffer cavity is in communication with the guide outlet. The guide outlet is used for discharging the exhaust gas in the buffer cavity. A stop step is arranged at the connection between the buffer cavity and the fluid channel, which is used for preventing the exhaust gas in the buffer cavity from flowing back to the fluid channel. Embodiments of the present application can avoid the pollution of the wafer caused by the backflow of the exhaust gas and particles, thereby greatly improving the quality of epitaxial process.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology, and more specifically, to a semiconductor process equipment and its process chamber. Background Technology

[0002] Currently, silicon carbide (SiC) epitaxial processes use hydrogen as the transport gas to deliver the silicon source, carbon source, and dopant gas into the process chamber. The process chamber is a reduced-pressure environment, typically at 80 mbar to 100 mbar. Generally, only a portion of the reactants grow on the wafer surface to form the required epitaxial layer, or grow on the inner wall of the process chamber to form an coating. Excess reactants react within the process chamber, forming particles that deposit at the rear of the chamber and in the exhaust gas line. These particles in the exhaust gas can easily backflow into the reaction space and deposit on the wafer surface under unstable gas flow conditions. Since SiC epitaxial processes are highly susceptible to surface particle interference, this can lead to growth defects on the wafer surface and significantly reduce epitaxial quality. Therefore, reducing exhaust gas backflow and suppressing particle deposition are crucial for improving the quality of the epitaxial process.

[0003] In existing technology, the process chamber has a process cavity for housing the wafer, and the exhaust gas in the process cavity is discharged outside the process tube after passing through an exhaust gas protection device. The exhaust gas protection device is a ring structure nested inside the process tube to block backflow to a certain extent. However, in actual applications, the exhaust gas directly impacts the end sidewall of the process tube, causing backflow. The backflowing exhaust gas carries particles that generate a large coating on the exhaust gas protection device. Simulation results show that the exhaust gas can bypass the exhaust gas protection device during backflow, thus entering the process cavity and severely affecting the epitaxial quality of the wafer. Summary of the Invention

[0004] This application addresses the shortcomings of existing methods by proposing a semiconductor process equipment and its process chamber to solve the technical problem of wafer epitaxial quality being affected by exhaust gas backflow in the prior art.

[0005] In a first aspect, embodiments of this application provide a process chamber for a semiconductor process apparatus, comprising: a process tube, a chamber assembly, and an exhaust gas device; the chamber assembly is disposed within the process tube, and the chamber assembly forms a process cavity for accommodating a wafer; a transfer port and an exhaust gas port are respectively formed at both ends of the chamber assembly; the transfer port is used to introduce process gas into the process cavity, and the exhaust gas port is used to exhaust exhaust gas from the process cavity; the exhaust gas device is disposed within the process tube and located on one side of the exhaust gas port; the exhaust gas device includes a housing, a fluid channel, a buffer cavity, and a stop step, wherein: a guide channel is formed on the housing. The housing includes an inlet and an outlet, with the inlet located near the exhaust port. A fluid channel and a buffer chamber are formed inside the housing. The inlet is connected to one end of the fluid channel, which guides the exhaust gas into the fluid channel. The fluid channel forms a first preset angle with the vertical direction. The other end of the fluid channel is connected to the buffer chamber, which is connected to the outlet, which discharges the exhaust gas from the buffer chamber. A stop step is located within the buffer chamber at the connection point with the fluid channel to prevent the exhaust gas from flowing back into the fluid channel.

[0006] In one embodiment of this application, the top wall of the housing is lower in the vertical direction than the height of the exhaust port. The top wall of the housing and the process tube cooperate to form a transfer cavity for transferring the wafer. The transfer cavity is connected to the process cavity through the exhaust port to transfer the wafer.

[0007] In one embodiment of this application, the inlet is opened on the top wall of the housing, and the opening direction of the inlet has a second preset angle with the opening direction of the exhaust port; the outlet is opened on the bottom wall or side wall of the housing away from the fluid channel.

[0008] In one embodiment of this application, a guide plate is provided inside the exhaust gas device. One end of the guide plate is connected to the side wall of the housing, and the other end extends obliquely downward to connect with the bottom wall of the housing. A stop step is provided on the top wall of the housing facing the guide plate, and the side of the stop step near the inlet is parallel to the guide plate. This side of the stop step cooperates with the guide plate to form the fluid channel.

[0009] In one embodiment of this application, the side of the stop step facing the buffer cavity forms a third preset angle with the top wall of the housing, and this side of the stop step is used to prevent the exhaust gas in the buffer cavity from flowing back into the fluid channel.

[0010] In one embodiment of this application, the width of the inlet is greater than or equal to the width of the exhaust port.

[0011] In one embodiment of this application, the first preset included angle is greater than or equal to 30 degrees and less than or equal to 60 degrees; and / or, the second preset included angle is greater than 0 degrees and less than or equal to 90 degrees; and / or, the third preset included angle is greater than or equal to 90 degrees and less than or equal to 160 degrees.

[0012] In one embodiment of this application, the chamber assembly includes two opposing and spaced-apart heating elements and two opposing and spaced-apart support elements, with the two support elements located between the two heating elements. The two heating elements and the two support elements cooperate to form the process chamber, and the heating elements are used to generate heat by inducing the magnetic field of the electromagnetic coil.

[0013] In one embodiment of this application, the chamber assembly further includes two heat-insulating covers, which are respectively attached to both ends of the two heating elements, and the transmission port and the exhaust port are respectively formed on the two heat-insulating covers.

[0014] Secondly, embodiments of this application provide a semiconductor process apparatus, including a process chamber as provided in the first aspect of the semiconductor process apparatus.

[0015] The beneficial technical effects of the technical solutions provided in this application are:

[0016] This embodiment of the application incorporates an exhaust gas device within a process tube. A fluid channel and a buffer chamber are sequentially arranged within the housing. The two ends of the fluid channel are connected to an inlet and the buffer chamber, respectively, while the other end of the buffer chamber is connected to an outlet. The extension direction of the fluid channel can form a first preset angle with the vertical direction, and a stop step is provided between the fluid channel and the buffer chamber. This design allows the exhaust gas discharged from the exhaust port to flow directly into the fluid channel via the inlet, and then be buffered by the buffer chamber. Due to the stop step, the exhaust gas cannot flow back into the fluid channel. Finally, the gas in the buffer chamber is discharged through the outlet. Therefore, it avoids the exhaust gas impacting the end of the process tube during its flow within the process tube, preventing backflow and preventing exhaust gas and particles from entering the process chamber and contaminating the wafer, thereby significantly improving the quality of the epitaxial process.

[0017] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0018] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0019] Figure 1AA cross-sectional schematic diagram of the main view of a process chamber provided in an embodiment of this application;

[0020] Figure 1B A top-view cross-sectional schematic diagram of a process chamber provided for an embodiment of this application;

[0021] Figure 2A This is a top view structural diagram of an exhaust gas device provided in an embodiment of this application;

[0022] Figure 2B This is a cross-sectional structural diagram of an exhaust gas device provided in an embodiment of this application. Detailed Implementation

[0023] This application is described in detail below. Examples of embodiments of this application are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Furthermore, detailed descriptions of known technologies that are unnecessary for the features of this application are omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0024] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0025] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments.

[0026] This application provides a process chamber for a semiconductor process apparatus, the structural schematic of which is shown below. Figure 1AAs shown, the device includes: a process tube 1, a chamber assembly 2, and an exhaust gas device 3; the chamber assembly 2 is disposed inside the process tube 1, and a process cavity 21 for accommodating the wafer 100 is formed inside the chamber assembly 2. A transfer port 22 and an exhaust gas port 23 are respectively formed at both ends of the chamber assembly 2. The transfer port 22 is used to transfer the wafer 100 into the process cavity 21 and to introduce process gas, and the exhaust gas port 23 is used to exhaust the exhaust gas in the process cavity 21; the exhaust gas device 3 is disposed inside the process tube 1 and is located on one side of the exhaust gas port 23. The exhaust gas device 3 includes a housing 30, a fluid channel 33, a buffer cavity 34, and a stop step 36, wherein: an inlet 31 is provided on the housing 30. The outlet 32 ​​and the inlet 31 are located near the exhaust port 23. The fluid channel 33 and the buffer chamber 34 are formed inside the housing 30. The inlet 31 is connected to one end of the fluid channel 33. The inlet 31 is used to guide the exhaust gas into the fluid channel 33. The fluid channel 33 forms a first preset angle with the vertical direction. The other end of the fluid channel 33 is connected to the buffer chamber 34. The buffer chamber 34 is connected to the outlet 32. The outlet 32 ​​is used to discharge the exhaust gas in the buffer chamber 34. The stop step 36 is set at the connection between the buffer chamber 34 and the fluid channel 33 to prevent the exhaust gas in the buffer chamber 34 from flowing back into the fluid channel 33.

[0027] like Figure 1AAs shown, the process chamber is specifically used for performing silicon carbide epitaxial processes, but this embodiment is not limited to this, and the process chamber can also be used to perform other processes. The process tube 1 can be a tubular structure made of quartz material. The chamber assembly 2 and the exhaust gas device 3 can be sequentially nested inside the process tube 1. For example, the chamber assembly 2 is located near the left end of the process tube 1, and the exhaust gas device 3 is located near the right end of the process tube 1. An exhaust port 11 can be opened at the bottom of the right end of the process tube 1 for connecting to a vacuum pump to discharge exhaust gas from the process tube 1. A process chamber 21 is formed inside the chamber assembly 2. A transmission port 22 can be provided at the left end of the chamber assembly 2, and an exhaust gas port 23 can be provided at the right end. That is, the two ends of the chamber assembly 2 respectively form a transmission port 22 and an exhaust gas port 23. The transmission port 22 is used to introduce process gas into the process chamber 21, and the exhaust gas port 23 is used to discharge exhaust gas from the process chamber 21. The exhaust gas device 3 is located on the right side of the chamber assembly 2, i.e., on the side where the exhaust gas port 23 is located. The exhaust gas device 3 includes a housing 30, a fluid channel 33, a buffer chamber 34, and a stop step 36. The housing 30 has an inlet 31 and an outlet 32 ​​at its left and right ends, respectively. The exhaust gas device 3 contains a fluid channel 33 and a buffer chamber 34 that connect the inlet 31 and the outlet 32. The top end of the fluid channel 33 connects to the inlet 31, and the bottom end of the fluid channel 33 extends obliquely downwards to connect with the left end of the buffer chamber 34. The extension direction of the fluid channel 33 forms a first preset angle with the vertical direction. The buffer chamber 34 can extend axially along the process pipe 1, and its right end can connect with the outlet 32. The stop step 36 is located within the buffer chamber 34 at the connection point with the fluid channel 33 to prevent exhaust gas from flowing back into the fluid channel 33 from the buffer chamber 34. In practical applications, since the inlet 31 is located close to the exhaust port 23, the gas can be guided into the fluid channel 33. The gas in the fluid channel 33 can enter the buffer chamber 34, and the outlet 32 ​​is used to discharge the exhaust gas in the buffer chamber 34 through the exhaust port 11. The stop step 36 is set at the connection between the fluid channel 33 and the buffer chamber 34, thus preventing the gas in the buffer chamber 34 from flowing back into the fluid channel 33. This prevents the exhaust gas from impacting the right end of the process tube 1 and causing the exhaust gas to backflow into the process chamber 21, thereby avoiding particles and coatings from affecting the epitaxial process quality of the wafer.

[0028] This embodiment of the application incorporates an exhaust gas device within a process tube. A fluid channel and a buffer chamber are sequentially arranged within the housing. The two ends of the fluid channel are connected to the inlet and the buffer chamber, respectively, while the other end of the buffer chamber is connected to the outlet. The extension direction of the fluid channel can form a first preset angle with the vertical direction, and a stop step is provided between the fluid channel and the buffer chamber. With this design, because a vacuum pump is connected to the exhaust gas device, a negative pressure is created in the fluid channel and buffer chamber under the action of the vacuum pump. Furthermore, the extension direction of the fluid channel can form a first preset angle with the vertical direction, allowing the exhaust gas discharged from the exhaust port to flow directly into the fluid channel through the inlet, and then be buffered by the buffer chamber. Due to the stop step, the exhaust gas cannot flow back into the fluid channel. Finally, the gas in the buffer chamber is discharged through the outlet. Therefore, the exhaust gas is prevented from impacting the end of the process tube during its flow within the process tube, thus preventing backflow and avoiding exhaust gas and particles from entering the process chamber and contaminating the wafer, thereby significantly improving the quality of the epitaxial process.

[0029] It should be noted that the embodiments of this application do not limit the specific arrangement of the chamber assembly 2 and the exhaust gas device 3. For example, the chamber assembly 2 can be arranged near the right end of the process pipe 1, and the exhaust gas device 3 can be arranged near the left end of the process pipe 1. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can adjust them according to the actual situation.

[0030] In one embodiment of this application, as Figures 1A to 1B As shown, the height of the top wall of the housing 30 in the vertical direction is lower than the height of the exhaust port 23. The top wall of the housing 30 and the process tube 1 are fitted together to form a transfer cavity 12 for transferring wafers. The transfer cavity 12 is connected to the process cavity 21 through the exhaust port 23 to transfer wafers.

[0031] like Figures 1A to 1BAs shown, the process tube 1 can be arranged horizontally. The transfer port 22, process cavity 21, and exhaust port 23 are all located in the center of the process tube 1 along its axial direction. This design allows for more uniform heating of the wafer 100 and makes the structure of this embodiment simple and easy to use. The exhaust device 3 can be located at the bottom of the exhaust port 23, meaning the top wall of the housing 30 is lower in the vertical direction than the height of the exhaust port 23. The top wall of the housing 30 and the inner wall of the process tube 1 cooperate to form the transfer cavity 12. This transfer cavity 12 can communicate with the process cavity 21 through the exhaust port 23 for transferring the wafer. With the above design, the wafer can be easily transferred through the exhaust port 23 in this embodiment, resulting in a simple and reasonable structure. In addition, since the overall height of the exhaust gas device 3 is lower than that of the exhaust gas port 23, and the inlet 31 is located close to the exhaust gas port 23, the exhaust gas discharged from the exhaust gas port 23 can be directly guided into the fluid channel 33 by the inlet 31. Therefore, it can prevent the exhaust gas from impacting the end of the process tube 1 and causing exhaust gas turbulence, thereby further preventing the exhaust gas and particles from flowing back into the process cavity 21, so as to further improve the quality of the wafer epitaxial process.

[0032] In one embodiment of this application, as Figures 1A to 1B As shown, the inlet 31 is located on the top wall of the housing 30, and the opening direction of the inlet 31 has a second preset angle with the opening direction of the exhaust port 23; the outlet 32 ​​is located on the bottom wall or side wall of the housing 30 away from the fluid channel 33. Optionally, the width of the inlet 31 is greater than or equal to the width of the exhaust port 23.

[0033] like Figures 1A to 1BAs shown, the housing 30 can be made entirely of graphite felt material, and the housing 30 is configured to match the process pipe 1. The housing 30 can be a split structure, so the top wall of the housing 30 can be a rectangular plate structure to form a fluid channel 33 and a buffer chamber 34 inside the housing 30. An inlet 31 is formed at the left end of the top wall of the housing 30, and the opening direction of the inlet 31 can be along the extension direction of the fluid channel 33. The opening direction of the inlet 31 is inclined towards the direction of the exhaust port 23. Since the opening direction of the exhaust port 23 is horizontal, the opening direction of the inlet 31 can form a second preset angle with the opening direction of the exhaust port 23. The specific value of the second preset angle can be 90 degrees, but this embodiment is not limited to this. The second preset angle can be greater than 0 degrees and less than or equal to 90 degrees. Those skilled in the art can adjust the setting according to the actual situation. An outlet 32 ​​is formed at the bottom right end of the housing 30. The outlet 32 ​​is located on the bottom or side wall of the housing 30 away from the fluid channel 33, but this embodiment is not limited to this. The above design makes the structure of this embodiment simple and easy to use. Furthermore, since the inlet 31 and outlet 32 ​​are located in different positions, the gas flow is smoother and more efficient, further preventing backflow. In addition, the use of graphite felt material increases the service life of the exhaust gas device 3, thereby significantly reducing the application and maintenance costs of this embodiment. Furthermore, since the width of the inlet 31 is greater than or equal to the width of the exhaust port 23, the air intake efficiency of the inlet 31 is increased, further preventing backflow of gas into the exhaust port 23.

[0034] It should be noted that the embodiments of this application do not limit the specific material and structure of the exhaust device 3. For example, the exhaust device 3 can also be made of other materials such as quartz or foamed quartz. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can make adjustments according to the actual situation.

[0035] In one embodiment of this application, as Figures 1A to 2B As shown, the exhaust gas device 3 has a guide plate 37 inside. One end of the guide plate 37 is connected to the side wall of the housing 30, and the other end extends downward to connect with the bottom wall of the housing 30. A stop step 36 is provided on the top wall of the housing 30 facing the guide plate 37. The side of the stop step 36 near the inlet 31 is parallel to the guide plate 37. This side of the stop step 36 and the guide plate 37 cooperate to form a fluid channel 33.

[0036] like Figures 1A to 2BAs shown, the guide plate 37 can specifically adopt a semi-circular plate structure. One end of the guide plate 37 with a straight edge can be connected to the top of the left side wall of the housing 30 and to the top of the left side wall. The other end of the guide plate 37 with an arc shape extends obliquely downward and is connected to the inner peripheral wall of the housing 30. One end of the guide plate 37 is connected to the side wall of the housing 30, and the other end extends obliquely downward and extends to the bottom of the housing 30 and connects to the bottom wall. Since the guide plate 37 can cooperate with the stop step 36 to form a fluid channel 33, the extension direction of the guide plate 37 can form a first preset angle with the vertical direction. This first preset angle can be greater than or equal to 30 degrees and less than or equal to 60 degrees, and preferably 45 degrees. Because the guide plate 37 adopts the above design, the exhaust gas can be guided from the inlet 31 to the outlet 32, avoiding the exhaust gas from colliding with the bottom of the housing 30 and causing backflow of exhaust gas, thereby further improving the effect of suppressing backflow of exhaust gas, and thus greatly improving the quality of wafer epitaxial process.

[0037] Furthermore, the stop step 36 can extend along the top wall of the housing 30 and be located on the side of the top wall of the housing 30 facing the guide plate 37. When the cross-sectional shape of the stop step 36 is triangular, the left side of the stop step 36 is parallel to the guide plate 37, so that this side of the stop step 36 and the guide plate 37 cooperate to form a fluid channel 33. With the above design, due to the inclined arrangement of the guide plate 37, combined with the guiding effect of the inclined surface of the stop step 36, the collision of exhaust gas when entering the exhaust gas device 3 is further reduced. Also, the exhaust gas device 3 is lower than the exhaust port 23, and the stop step 36 blocks the turbulence generated by the collision of exhaust gas at the outlet 32, thereby further suppressing the backflow of exhaust gas and particles. However, the embodiments of this application do not limit the specific value of the first preset angle. For example, the first preset angle can be set to any value greater than or equal to 30 degrees and less than or equal to 60 degrees, so that the embodiments of this application can be applied to a variety of process parameters, thereby greatly improving the applicability and scope of application of the embodiments of this application.

[0038] It should be noted that the embodiments of this application do not limit the specific location of the stop step 36, as long as the stop step 36 is located between the inlet 31 and the outlet 32; and the embodiments of this application do not limit the specific structure of the guide plate 37, for example, the guide plate 37 can be an inclined surface integrally formed in the housing 30. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can make adjustments according to the actual situation.

[0039] In one embodiment of this application, as Figures 1A to 2B As shown, the side of the stop step 36 facing the buffer cavity 34 forms a third preset angle with the top wall of the housing 30. This side of the stop step 36 is used to prevent the exhaust gas in the buffer cavity 34 from flowing back into the fluid channel 33.

[0040] like Figures 1A to 2B As shown, a stop step 36 is integrally formed on the bottom surface of the top wall of the housing 30. The cross-sectional shape of the stop step 36 can be set as a triangle so that a third preset angle is formed between the side of the stop step 36 facing the buffer cavity 34 and the top wall. The third preset angle can be 135 degrees, but the embodiments of this application are not limited to this. For example, the third preset angle can also be greater than or equal to 90 degrees and less than or equal to 160 degrees, so that the side of the stop step 36 can prevent the exhaust gas in the buffer cavity 34 from flowing back into the fluid channel 33, thereby preventing the exhaust gas from flowing back into the process cavity 21, so as to improve the quality of the epitaxial process. In practical applications, after the exhaust gas is introduced into the fluid channel 33 through the inlet 31, due to the combined action of the outlet 32 ​​and the extraction port 11, the exhaust gas will flow along the extension direction of the fluid channel 33 and the buffer cavity 34, and may collide with the right side wall of the housing 30 and flow upward. At this time, the stop step 36 can effectively prevent the exhaust gas from flowing out of the inlet 31, so as to avoid the exhaust gas and particles from entering the process cavity 21, thereby further improving the quality of the wafer epitaxial process. Furthermore, the embodiments of this application do not limit the specific shape of the stop step 36. For example, the cross-sectional shape of the stop step 36 can also be semi-circular, rectangular or other shapes. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can adjust them according to the actual situation.

[0041] It should be noted that the embodiments of this application do not limit the specific structure of the stop step 36. For example, the stop step 36 can be a separate structure from the top wall of the housing 30. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can make adjustments according to the actual situation.

[0042] In one embodiment of this application, as Figures 1A to 1B As shown, the chamber assembly 2 includes two opposing and spaced-apart heating elements 24 and two opposing and spaced-apart support elements 25. The two support elements 25 are located between the two heating elements 24. The two heating elements 24 and the two support elements 25 cooperate to form a process chamber 21. The heating elements 24 are used to generate heat by inducing the magnetic field of the electromagnetic coil.

[0043] like Figures 1A to 1BAs shown, the heating element 24 is made of graphite. Two heating elements 24 are respectively disposed at the top and bottom of the process tube 1, and there is a gap between them in the axial direction of the process tube to form a process cavity 21. The process cavity 21 is used to support the wafer 100 and to allow process gas to flow through. The support element 25 can be a rod-shaped structure made of graphite. Two support elements 25 are both extended along the axial direction of the process tube 1 and are spaced apart between the two heating elements 24 to support the two heating elements 24, thereby creating a gap between the two heating elements to form the process cavity 21. With the above design, the cavity assembly 2 is easy to disassemble and maintain, thereby significantly reducing application and maintenance costs. However, the embodiments of this application do not limit the connection method between the support element 25 and the heating element 24. For example, the support element 25 and the heating element 24 can be made in an integral form. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation. The two heating elements 24 can generate heat by sensing the magnetic block of the electromagnetic coil, thereby heating the wafer 100. Specifically, the electromagnetic coil generates an alternating magnetic field when energized, and the heating element 24 generates current through electromagnetic induction, thus producing heat. The electromagnetic coil is arranged around the process tube 1 along its axial direction, and the axial length of the electromagnetic coil can be the same as the axial length of the heating element 24 to improve the energy conversion efficiency of the electromagnetic coil. This design simplifies the structure of this application, thereby further improving heating efficiency and significantly saving energy. However, the embodiments of this application do not limit the specific implementation of the chamber assembly 2, and those skilled in the art can adjust the settings according to actual conditions. Furthermore, the embodiments of this application do not limit the specific material of the heating element 24, as long as it can be induced and heated by the electromagnetic coil. Therefore, those skilled in the art can adjust the settings according to actual conditions.

[0044] In one embodiment of this application, as Figures 1A to 1B As shown, the chamber assembly 2 also includes two heat-insulating covers 26, which are respectively attached to both ends of the two heating elements 24. A transmission port 22 and an exhaust port 23 are formed on the two heat-insulating covers 26. Specifically, the heat-insulating covers 26 can be made of graphite, and each heat-insulating cover 26 has a rectangular opening for forming the transmission port 22 and the exhaust port 23, respectively. The two heat-insulating covers 26 are respectively disposed at the left and right ends of the two heating elements 24 to fix the two heating elements 24 and the support member 25, making the chamber assembly 2 a single structure, thereby improving the structural stability of the chamber assembly 2 and also insulating the heating elements 24 to improve their heating efficiency. It should be noted that the specific material of the heat-insulating covers 26 is not limited in this embodiment, as long as it can achieve the heat-insulating effect. Therefore, those skilled in the art can adjust the settings according to the actual situation.

[0045] Based on the same inventive concept, embodiments of this application provide a semiconductor process apparatus, including a process chamber as described in the above embodiments.

[0046] By applying the embodiments of this application, at least the following beneficial effects can be achieved:

[0047] This embodiment of the application incorporates an exhaust gas device within a process tube. A fluid channel and a buffer chamber are sequentially arranged within the housing. The two ends of the fluid channel are connected to an inlet and the buffer chamber, respectively, while the other end of the buffer chamber is connected to an outlet. The extension direction of the fluid channel can form a first preset angle with the vertical direction, and a stop step is provided between the fluid channel and the buffer chamber. This design allows the exhaust gas discharged from the exhaust port to flow directly into the fluid channel via the inlet, and then be buffered by the buffer chamber. Due to the stop step, the exhaust gas cannot flow back into the fluid channel. Finally, the gas in the buffer chamber is discharged through the outlet. Therefore, it avoids the exhaust gas impacting the end of the process tube during its flow within the process tube, preventing backflow and preventing exhaust gas and particles from entering the process chamber and contaminating the wafer, thereby significantly improving the quality of the epitaxial process.

[0048] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

[0049] In the description of this application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0050] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0051] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0052] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0053] The above description is only a partial embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A process chamber for semiconductor process equipment, characterized in that, include: Process pipes, chamber components, and exhaust gas devices; The chamber assembly is disposed inside the process tube, and the chamber assembly forms a process cavity for accommodating the wafer. A transfer port and an exhaust port are respectively formed at both ends of the chamber assembly. The transfer port is used to introduce process gas into the process cavity, and the exhaust port is used to exhaust the exhaust gas in the process cavity. The exhaust gas device is disposed inside the process pipe and located on one side of the exhaust gas port. The exhaust gas device includes a housing, a fluid channel, a buffer chamber, and a stop step, wherein: The housing has an inlet and an outlet, with the inlet located near the exhaust port. The fluid channel and the buffer chamber are formed inside the housing. The inlet is connected to one end of the fluid channel, which guides the exhaust gas into the fluid channel. The fluid channel forms a first preset angle with the vertical direction. The other end of the fluid channel is connected to the buffer chamber, which is connected to the outlet, which discharges the exhaust gas from the buffer chamber. A stop step is located at the connection point between the buffer chamber and the fluid channel to prevent the exhaust gas in the buffer chamber from flowing back into the fluid channel. The side of the stop step near the inlet forms part of the fluid channel.

2. The process chamber as described in claim 1, characterized in that, The top wall of the housing is lower in the vertical direction than the height of the exhaust port. The top wall of the housing and the process tube are fitted together to form a transfer cavity for transferring the wafer. The transfer cavity is connected to the process cavity through the exhaust port to transfer the wafer.

3. The process chamber as described in claim 2, characterized in that, The inlet is located on the top wall of the housing, and the opening direction of the inlet has a second preset angle with the opening direction of the exhaust port; the outlet is located on the bottom wall or side wall of the housing away from the fluid channel.

4. The process chamber as described in claim 3, characterized in that, The exhaust gas device has a guide plate inside. One end of the guide plate is connected to the side wall of the housing, and the other end extends downward to connect with the bottom wall of the housing. A stop step is provided on the top wall of the housing facing the guide plate, and the side of the stop step near the inlet is parallel to the guide plate. This side of the stop step cooperates with the guide plate to form the fluid channel.

5. The process chamber as described in claim 4, characterized in that, The side of the stop step facing the buffer cavity forms a third preset angle with the top wall of the housing. This side of the stop step is used to prevent the exhaust gas in the buffer cavity from flowing back into the fluid channel.

6. The process chamber as described in claim 1, characterized in that, The width of the inlet is greater than or equal to the width of the exhaust port.

7. The process chamber as described in claim 1, 3, or 5, characterized in that, The first preset included angle is greater than or equal to 30 degrees and less than or equal to 60 degrees; And / or, the second preset included angle is greater than 0 degrees and less than or equal to 90 degrees; And / or, the third preset included angle is greater than or equal to 90 degrees and less than or equal to 160 degrees.

8. The process chamber as described in any one of claims 1, characterized in that, The chamber assembly includes two opposing and spaced-apart heating elements and two opposing and spaced-apart support elements, with the two support elements located between the two heating elements. The two heating elements and the two support elements cooperate to form the process chamber. The heating elements are used to generate heat by inducing the magnetic field of the electromagnetic coil.

9. The process chamber as described in claim 8, characterized in that, The chamber assembly also includes two heat-insulating covers, which are respectively attached to both ends of the two heating elements, and the transmission port and the exhaust port are respectively formed on the two heat-insulating covers.

10. A semiconductor process apparatus, characterized in that, The process chamber of the semiconductor process equipment as described in any one of claims 1 to 9.

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