Display panel and display panel repair method

Abstract

The present application discloses a display panel and a display panel repair method. The display panel includes a plurality of sub-pixels, each of which includes an adjacent light-emitting region and a non-light-emitting region. The display panel includes a substrate, a transistor layer, and a light-emitting structure layer stacked in sequence. The transistor layer includes a transistor and an epitaxial conductor portion. The transistor includes a first electrode and a second electrode spaced apart from each other in the same layer. The epitaxial conductor portion is located in the non-light-emitting region and is connected to the first electrode or the second electrode. The light-emitting structure layer includes a stacked lower electrode and an upper electrode. The lower electrode is connected to the first electrode or the second electrode, and the upper electrode extends from the light-emitting region to the non-light-emitting region. The orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate. This allows the epitaxial conductor portion to connect to the upper electrode when a bright spot defect occurs on the display panel, thereby improving the efficiency of repairing the bright spot defect.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a method for repairing a display panel. Background Art

[0002] At present, during the preparation process of light-emitting diode display panels, due to metal residue, broken wires or the presence of foreign matter, the light-emitting diode display panel may have poor bright spot problems when the device is in the lighting stage. Light-emitting diodes include organic light-emitting diodes and inorganic light-emitting diodes. The existing method for repairing poor bright spots usually adopts the method of cutting off the power cord or short-circuiting the anode and cathode. The existing repair method is cumbersome to repair poor bright spots, resulting in low repair efficiency. Summary of the Invention

[0003] Embodiments of the present application provide a display panel and a method for repairing the display panel, which improve the efficiency of repairing defective bright spots.

[0004] The present application provides a display panel, the display panel including a plurality of sub-pixels, each of the sub-pixels including a light-emitting region and a non-light-emitting region adjacent to each other, the display panel including:

[0005] substrate;

[0006] a transistor layer disposed on the substrate, the transistor layer comprising a transistor and an epitaxial conductor portion, the transistor being located in the light-emitting region, the transistor comprising a first electrode and a second electrode disposed in the same layer and spaced apart from each other, the epitaxial conductor portion being located in the non-light-emitting region, the transistor further comprising an active portion located below the first electrode, the epitaxial conductor portion comprising a first epitaxial portion, the active portion being connected to the first epitaxial portion, and the active portion being connected to the first electrode or the second electrode; and

[0007] a light-emitting structure layer disposed on the transistor layer, the light-emitting structure layer comprising a lower electrode and an upper electrode stacked together, the lower electrode being connected to the first electrode or the second electrode, and the upper electrode extending from the light-emitting region to the non-light-emitting region;

[0008] The orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate.

[0009] Optionally, in some embodiments of the present application, the transistor further includes a light-shielding portion located below the first electrode, the epitaxial conductor portion further includes a second epitaxial portion, the light-shielding portion is connected to the second epitaxial portion, and the light-shielding portion is connected to the first electrode or the second electrode.

[0010] Optionally, in some embodiments of the present application, the transistor further includes a gate insulating portion and a gate, the first epitaxial portion is formed by extending the active portion toward the non-luminous area, and the gate insulating portion and the gate are sequentially stacked on the active portion.

[0011] Optionally, in some embodiments of the present application, the transistor layer further includes a metal conduction portion, which is arranged between the first epitaxial portion and the upper electrode, the metal conduction portion and the gate are spaced apart, the metal conduction portion is connected to the first epitaxial portion and is insulated from the upper electrode, the gate and the metal conduction portion are made by one process, and the metal conduction portion, the first epitaxial portion and the upper electrode are arranged correspondingly.

[0012] Optionally, in some embodiments of the present application, the display panel further includes a pixel definition layer, wherein the pixel definition layer is arranged on the transistor layer and the lower electrode, an auxiliary electrode hole is provided in the pixel definition layer, the auxiliary electrode hole is located in the non-luminous area, the auxiliary electrode hole passes through the pixel definition layer, the auxiliary electrode hole is arranged corresponding to the first extension portion and the metal conductive portion, the upper electrode is arranged on the pixel definition layer, and the upper electrode extends into the auxiliary electrode hole.

[0013] Optionally, in some embodiments of the present application, the display panel further includes a connecting structure, which is arranged between the upper electrode and the metal conductive portion, and the connecting structure is insulated from the upper electrode and the metal conductive portion, and the connecting structure, the first extension portion, the metal conductive portion and the upper electrode are arranged correspondingly.

[0014] Optionally, in some embodiments of the present application, the connection structure includes a connection electrode, which is arranged on the transistor layer and is in the same layer as the lower electrode and is spaced apart from each other.

[0015] Optionally, in some embodiments of the present application, the connection structure includes a connected transition portion and a first conductive portion, the transition portion is arranged on a side of the first conductive portion close to the upper electrode, and the transition portion is in the same layer as the first electrode and the second electrode and is arranged at intervals.

[0016] Optionally, in some embodiments of the present application, the transistor further includes a light-shielding portion, which is arranged corresponding to the active portion, the light-shielding portion is connected to the first electrode, the first electrode is connected to one end of the active portion and the upper electrode, the second electrode is connected to the first extension portion and the other end of the active portion, and the orthographic projection of the active portion on the substrate is staggered with the orthographic projection of the first extension portion on the substrate.

[0017] Accordingly, the present application further provides a display panel, comprising a plurality of sub-pixels, each of which comprises a light-emitting region and a non-light-emitting region disposed adjacent to each other, the display panel comprising:

[0018] substrate;

[0019] a transistor layer disposed on the substrate, the transistor layer comprising a transistor and an epitaxial conductor portion, the transistor being located in the light-emitting region, the transistor comprising a first electrode and a second electrode disposed in the same layer and spaced apart from each other, the epitaxial conductor portion being located in the non-light-emitting region, the transistor further comprising an active portion located below the first electrode, the epitaxial conductor portion comprising a first epitaxial portion, the active portion being connected to the first epitaxial portion, and the active portion being connected to the first electrode or the second electrode; and

[0020] A light-emitting structure layer is arranged on the transistor layer, and the light-emitting structure layer includes a lower electrode and an upper electrode stacked together, the lower electrode is connected to the first electrode or the second electrode, the upper electrode extends from the light-emitting area to the non-light-emitting area, and the upper electrode is connected to the epitaxial conductor portion.

[0021] Optionally, in some embodiments of the present application, the first epitaxial portion is formed by extending the active portion toward the non-luminous area, and the transistor layer also includes a metal conductive portion, which is arranged on the first epitaxial portion, and the metal conductive portion is connected to the upper electrode and the first epitaxial portion.

[0022] Optionally, in some embodiments of the present application, the transistor further includes a gate insulating portion and a gate, the gate insulating portion and the gate are stacked in sequence on the active portion, the gate and the metal conductive portion are spaced apart, and the gate and the metal conductive portion are manufactured by one process.

[0023] Optionally, in some embodiments of the present application, the display panel further includes a pixel definition layer, wherein the pixel definition layer is arranged on the transistor layer and the lower electrode, an auxiliary electrode hole is provided in the pixel definition layer, the auxiliary electrode hole is located in the non-luminous area, the auxiliary electrode hole passes through the pixel definition layer, the auxiliary electrode hole is arranged corresponding to the first extension portion, the upper electrode is arranged on the pixel definition layer, and the upper electrode extends into the auxiliary electrode hole and is connected to the first extension portion.

[0024] Optionally, in some embodiments of the present application, the display panel further includes a connection structure, wherein the connection structure is disposed between the pixel definition layer and the first extension portion, and the connection structure is connected to the upper electrode and the first extension portion.

[0025] Optionally, in some embodiments of the present application, the transistor further includes a light-shielding portion located below the first electrode, the epitaxial conductor portion further includes a second epitaxial portion, the light-shielding portion is connected to the second epitaxial portion, and the light-shielding portion is connected to the first electrode or the second electrode.

[0026] Accordingly, the present application also provides a method for repairing a display panel, comprising:

[0027] A panel to be repaired is provided, the panel to be repaired comprising a plurality of sub-pixels, each of the sub-pixels comprising a light-emitting region and a non-light-emitting region adjacent to each other, the panel to be repaired comprising:

[0028] substrate;

[0029] a transistor layer disposed on the substrate, the transistor layer comprising a transistor and an epitaxial conductor portion, the transistor being located in the light-emitting region, the transistor comprising a first electrode and a second electrode disposed in the same layer and spaced apart from each other, the epitaxial conductor portion being located in the non-light-emitting region, the transistor further comprising an active portion located below the first electrode, the epitaxial conductor portion comprising a first epitaxial portion, the active portion being connected to the first epitaxial portion, and the active portion being connected to the first electrode or the second electrode; and

[0030] a light-emitting structure layer disposed on the transistor layer, the light-emitting structure layer comprising a lower electrode and an upper electrode stacked together, the lower electrode being connected to the first electrode or the second electrode, and the upper electrode extending from the light-emitting region to the non-light-emitting region;

[0031] The orthographic projection of the epitaxial conductor portion on the substrate is a first projection that at least partially overlaps with the orthographic projection of the upper electrode on the substrate;

[0032] The epitaxial conductor portion is connected to the upper electrode.

[0033] The present application provides a display panel and a method for repairing a display panel, wherein the display panel includes a plurality of sub-pixels, each sub-pixel includes a light-emitting area and a non-light-emitting area arranged adjacent to each other, the display panel includes a substrate, a transistor layer and a light-emitting structure layer stacked in sequence, the transistor layer is arranged on the substrate, the transistor layer includes a transistor and an epitaxial conductor portion, the transistor includes a first electrode and a second electrode in the same layer and arranged at intervals, the epitaxial conductor portion is located in the non-light-emitting area, the transistor also includes an active portion located below the first electrode, the epitaxial conductor portion includes a first epitaxial portion, the active portion is connected to the first epitaxial portion, and the active portion is connected to the first electrode or the second electrode; the light-emitting structure layer is arranged on the transistor layer, the light-emitting structure layer includes a lower electrode and an upper electrode stacked, the lower electrode is connected to the first electrode or the second electrode, and the upper electrode extends from the light-emitting area to the non-light-emitting area; wherein the orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate. In the present application, an epitaxial conductor portion connected to the transistor is provided, and the orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate. When a bright spot occurs on the display panel, the overlapping epitaxial conductor portion and the upper electrode area are laser-irradiated, so that the epitaxial conductor portion can be connected to the upper electrode, thereby repairing the display panel and improving the success rate of repairing the bright spot. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0035] Figure 1 This is a schematic diagram of the first structure of the display panel provided in an embodiment of the present application.

[0036] Figure 2 This is a second structural diagram of the display panel provided in an embodiment of the present application.

[0037] Figure 3 This is a third structural diagram of the display panel provided in an embodiment of the present application.

[0038] Figure 4 Schematic diagram of the structure of the display panel provided in an embodiment of the present application.

[0039] Figure 5 1 is a schematic flow chart of the steps of a display panel repair method provided in an embodiment of the present application.

[0040] Figure 6 Schematic diagram of the process of manufacturing a display panel provided in an embodiment of the present application.

[0041] Description of reference numerals:

[0042] Display panel 10; light-emitting area 11; non-light-emitting area 12; substrate 100; transistor layer 200; light-shielding portion 201; first electrode 202; buffer layer 203; epitaxial conductor portion 204; first epitaxial portion 2041; second epitaxial portion 2042; active portion 205; semiconductor portion 205a; main conductor portion 205b; second electrode 206; gate insulating portion 207; metal conductive portion 208; gate 209; interlayer dielectric layer 210; transition portion 211; first electrode 212; second electrode 213; passivation layer 214; first conductive portion 215; second conductive portion 216; flat layer 217; connecting electrode 218; first through hole 219; second through hole 220; third through hole 221; fourth through hole 222; fifth through hole 223; sixth through hole 224; seventh through hole 225; pixel definition layer 300; auxiliary electrode hole 301; via 302; light emitting structure layer 400; lower electrode 410; light emitting layer 420; upper electrode 430. DETAILED DESCRIPTION

[0043] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device. In the present application, "reaction" can be a chemical reaction or a physical reaction.

[0044] The present application provides a display panel and a method for repairing the display panel, wherein the display panel includes a plurality of sub-pixels, each sub-pixel includes a light-emitting area and a non-light-emitting area arranged adjacent to each other, the display panel includes a substrate, a transistor layer and a light-emitting structure layer stacked in sequence, the transistor layer is arranged on the substrate, the transistor layer includes a transistor and an epitaxial conductor portion, the transistor includes a first electrode and a second electrode in the same layer and arranged at intervals, the epitaxial conductor portion is located in the non-light-emitting area, the transistor also includes an active portion located below the first electrode, the epitaxial conductor portion includes a first epitaxial portion, the active portion is connected to the first epitaxial portion, and the active portion is connected to the first electrode or the second electrode; the light-emitting structure layer is arranged on the transistor layer, the light-emitting structure layer includes a lower electrode and an upper electrode stacked, the lower electrode is connected to the first electrode, and the upper electrode extends from the light-emitting area to the non-light-emitting area; wherein the orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate.

[0045] In the present application, an epitaxial conductor portion connected to the transistor is provided, and the orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate, so that when a bright spot occurs on the display panel, the epitaxial conductor portion and the upper electrode in the laser overlapping area enable the epitaxial conductor portion to be connected to the upper electrode, thereby repairing the bright spot of the display panel and improving the success rate of repairing the bright spot.

[0046] See also Figure 1 The present application provides a display panel 10. The display panel 10 includes a plurality of sub-pixels, each of which includes an adjacent light-emitting region 11 and a non-light-emitting region 12. The display panel 10 includes a substrate 100, a transistor layer 200, a pixel definition layer 300, and a light-emitting structure layer 400.

[0047] Transistor layer 200 is disposed on substrate 100. Transistor layer 200 includes transistors and an epitaxial conductor portion 204. The transistors are located in light-emitting region 11 and non-light-emitting region 12. The transistors include a first electrode 212 and a second electrode 213 spaced apart from each other in the same layer. Epitaxial conductor portion 204 is located in non-light-emitting region 12. The transistor also includes an active portion 205 located below first electrode 212. Epitaxial conductor portion 204 includes a first epitaxial portion 2041. Active portion 205 is connected to first epitaxial portion 2041, and active portion 205 is connected to first electrode 212 or second electrode 213. Specifically, epitaxial conductor portion 204 includes first epitaxial portion 2041. The active portion 205 is connected to the first epitaxial portion 2041, and is further connected to one of the first electrode 212 and the second electrode 213. The first epitaxial portion 2041 is formed by extending the active portion 205 toward the non-luminescent region. The transistor layer 200 includes a light shielding portion 201, a first electrode 202, a buffer layer 203, a first epitaxial portion 2041, an active portion 205, a second electrode 206, a gate insulating portion 207, a metal conductive portion 208, a gate 209, an interlayer dielectric layer 210, a transition portion 211, a first electrode 212, a second electrode 213, a passivation layer 214, a first conductive portion 215, a second conductive portion 216, a planarization layer 217, and a connecting electrode 218. The active portion 205 includes a semiconductor portion 205a and main conductor portions 205b disposed on both sides thereof. The first conductive portion 215, the transition portion 211, and the connection electrode 218 constitute the connection structure of the display panel 10. The light shielding portion 201, the active portion 205, the gate insulating portion 207, the gate 209, the first electrode 212, and the second electrode 213 constitute the transistors in the transistor layer 200. The transistor layer 200 includes multiple transistors spaced apart and arranged in the same layer. In this embodiment, the transistors are top-gate transistors.

[0048] Specifically, the light shielding portion 201 and the first electrode plate 202 are disposed on the same layer and spaced apart on the substrate 100. The first electrode plate 202 is located in the light-emitting region 11. The first electrode plate 202 and the light shielding portion 201 are formed of the same metal material. The materials of the first electrode plate 202 and the light shielding portion 201 include one or a combination of Cu and MoTi. Optionally, the materials of the first electrode plate 202 and the light shielding portion 201 can also be other materials.

[0049] Next, the buffer layer 203 is disposed on the light shielding portion 201 , the first electrode plate 202 and the substrate 100 .

[0050] Next, the active portion 205 and the first extension portion 2041 are arranged in the same layer as the second electrode plate 206 and spaced apart. The first extension portion 2041 is connected to the main conductor portion 205b. The first extension portion 2041 is located in the non-luminous region 12. The first extension portion 2041 is formed by the main conductor portion 205b extending into the non-luminous region 12. The orthographic projection of the first extension portion 2041 on the substrate 100 is the first projection. The orthographic projection of the upper electrode 430 on the substrate 100 is the second projection. The first and second projections at least partially overlap. When repairing a bright spot defect, the first extension portion 2041 is used to illuminate the first extension portion 2041 with a laser, causing it to connect to the subsequent upper electrode 430, thereby forming a short circuit with the upper electrode 430. The laser is a laser. The semiconductor portion 205a is located above the light shielding portion 201. The second electrode plate 206 is located above the first electrode plate 202. The active portion 205, first epitaxial portion 2041, and second plate 206 are formed from the same material and fabricated using the same photomask. They are comprised of a metal oxide, amorphous silicon, or polycrystalline silicon. The metal oxide can be indium gallium zinc oxide or indium gallium tin oxide, for example. Alternatively, the metal oxide can be made of other materials.

[0051] In the present application, the first extension portion 2041 is formed by extending the conductor portion 205b to the non-luminous area 12. The first extension portion 2041 is used as a repair electrode when repairing a defective bright spot. The active portion 205 and the first extension portion 2041 can be formed using a single photomask process, and there is no need to use another photomask process to form a repair electrode for repairing a defective bright spot, thereby simplifying the process of the display panel 10 and shortening the production cycle of the display panel 10, thereby reducing the production cost of the display panel 10.

[0052] Please continue reading Figure 1 In one embodiment, the first extension portion 2041 has the same thickness H as the active portion 205 and the second electrode plate 206. The thickness H of the active portion 205, the first extension portion 2041, and the second electrode plate 206 is 100-300 nanometers. Specifically, the thickness H of the active portion 205, the first extension portion 2041, and the second electrode plate 206 can be 100 nanometers, 150 nanometers, 200 nanometers, 250 nanometers, or 300 nanometers.

[0053] In the present application, the thickness H of the first epitaxial portion 2041 is set to 100-300 nanometers. Since the thickness of the first epitaxial portion 2041 is relatively thin, when the first epitaxial portion 2041 is used to repair a bad bright spot, only a small amount of laser energy is needed to connect the first epitaxial portion 2041 to the upper electrode, that is, to short-circuit the first epitaxial portion 2041 and the upper electrode, thereby improving the success rate of the repair.

[0054] Please continue reading Figure 1, then, the gate insulating portion 207 is provided on the semiconductor portion 205a.

[0055] Please continue reading Figure 1 Next, the metal via 208 is disposed on the first extension 2041. The metal via 208 is used to connect the first extension 2041 to the top electrode when repairing a bright spot defect. The gate 209 is disposed on the gate insulator 207 and spaced apart from the metal via 208. The first extension 2041, the metal via 208, and the top electrode 430 are disposed in correspondence. The orthographic projection of the metal via 208 on the substrate 100 is the third projection, which at least partially overlaps with the first and second projections.

[0056] It should be noted that the corresponding setting describes that one film layer is located directly above or directly below another film layer.

[0057] In the present application, the first extension portion 2041 is composed of metal oxide, polysilicon or amorphous silicon, and the upper electrode 430 is composed of metal. When repairing a bad bright spot, because the first extension portion 2041 is not composed of metal, it may cause the first extension portion 2041 and the upper electrode 430 to be difficult to conduct. A metal conductive portion 208 is provided on the first extension portion 2041 to be in direct contact with it. Because the metal conductive portion 208 is composed of metal, the electrical signal of the upper electrode 430 can be well transmitted to the first extension portion 2041, that is, the first extension portion 2041 and the upper electrode 430 are easily short-circuited, thereby further improving the success rate of repairing the bad bright spot.

[0058] Please continue reading Figure 1 Next, an interlayer dielectric layer 210 is disposed on the buffer layer 203, the first epitaxial portion 2041, the active portion 205, the second electrode 206, the gate insulating portion 207, the metal conductive portion 208, and the gate 209. The interlayer dielectric layer 210 is provided with a first through-hole 219, a second through-hole 220, and a third through-hole 221. The first through-hole 219 penetrates the interlayer dielectric layer 210 to expose the main conductor portion 205b connected to the first epitaxial portion 2041. The second through-hole 220 penetrates the interlayer dielectric layer 210 to expose the main conductor portion 205b located away from the first epitaxial portion 2041. The third through-hole 221 penetrates the interlayer dielectric layer 210 and the buffer layer 203 to expose the light shielding portion 201. The second through-hole 220 and the third through-hole 221 are located on one side of the semiconductor portion 205a. The first through-hole 219 is located on the other side of the semiconductor portion 205a.

[0059] Please continue reading Figure 1Next, the first electrode 212, the second electrode 213, and the transition portion 211 are disposed on the same layer and spaced apart on the interlayer dielectric layer 210. The second electrode 213 is located between the first electrode 212 and the transition portion 211. The second electrode 213 extends into the first through-hole 219 and connects to the main conductor portion 205b connected to the first extension portion 2041. The first electrode 212 extends into the second through-hole 220 and the third through-hole 221 and connects to the main conductor portion 205b and the light shielding portion 201. The first electrode 212 is located in the light-emitting region 11. The transition portion 211 is located in the non-light-emitting region 12. The transition portion 211, the first extension portion 2041, the metal conductive portion 208, and the top electrode 430 are disposed in correspondence. In other words, the orthographic projection of the transition portion 211 on the substrate 100 at least partially overlaps with the first and second projections. In other words, the orthographic projection of the connection structure on the substrate 100 at least partially overlaps with the third, first, and second projections. The first electrode 212 is a source electrode, and the second electrode 213 is a drain electrode.

[0060] In another embodiment, the first electrode 212 is a drain electrode, and the second electrode 213 is a source electrode.

[0061] Please continue reading Figure 1 Next, a passivation layer 214 is disposed on the transition portion 211, the first electrode 212, and the second electrode 213. The passivation layer 214 is provided with a fourth through hole 222 and a fifth through hole 223. The fourth through hole 222 penetrates the passivation layer 214 to expose the transition portion 211. The fifth through hole 223 penetrates the passivation layer 214 to expose the first electrode 212.

[0062] Please continue reading Figure 1 Then, the first conductive portion 215 and the second conductive portion 216 are arranged on the same layer and spaced apart on the passivation layer 214. The first conductive portion 215 extends into the fourth through hole 222 and connects to the transition portion 211. The first conductive portion 215, the first extension portion 2041, the metal conductive portion 208, and the upper electrode 430 are arranged correspondingly. That is, the orthographic projection of the first conductive portion 215 on the substrate 100 at least partially overlaps with the first projection and the second projection, that is, the orthographic projection of the connection structure on the substrate 100 at least partially overlaps with the first projection and the second projection. The second conductive portion 216 extends into the fifth through hole 223 and connects to the first electrode 212. The first conductive portion 215 and the second conductive portion 216 are formed of the same metal material. The material of the first conductive portion 215 and the second conductive portion 216 includes MoTi. Optionally, the material of the first conductive portion 215 and the second conductive portion 216 can also be other materials.

[0063] Please continue reading Figure 1Next, a planarization layer 217 is disposed on the passivation layer 214, the first conductive portion 215, and the second conductive portion 216. The planarization layer 217 is provided with a sixth through-hole 224 and a seventh through-hole 225. The sixth through-hole 224 penetrates the planarization layer 217 to expose the first conductive portion 215. The seventh through-hole 225 penetrates the planarization layer 217 to expose the second conductive portion 216.

[0064] Please continue reading Figure 1 The light-emitting structure layer 400 is disposed on the transistor layer 200. The light-emitting structure layer 400 includes a stacked lower electrode 410 and an upper electrode 430. The lower electrode 410 is connected to the first electrode 212. The upper electrode 430 extends from the light-emitting region 11 to the non-light-emitting region 12. Specifically, the light-emitting structure layer 400 includes multiple light-emitting structure portions. Each light-emitting structure portion is connected to a transistor. Each light-emitting structure portion includes a lower electrode 410, a light-emitting layer 420, and an upper electrode 430. In other words, the light-emitting structure layer 400 includes the lower electrode 410, the light-emitting layer 420, and the upper electrode 430. The connecting electrode 218 is disposed on the same layer as the lower electrode 410 and spaced apart on the planar layer 217. The connecting electrode 218 extends into the sixth through hole 224 and connects to the first conductive portion 215. The orthographic projection of the connecting electrode 218 on the substrate 100 at least partially overlaps with the first projection and the second projection. In other words, the orthographic projection of the connecting structure on the substrate 100 at least partially overlaps with the first projection and the second projection. The lower electrode 410 extends into the seventh through hole 225 and is connected to the second conductive portion 216 .

[0065] Next, the pixel definition layer 300 is disposed on the planar layer 217, the lower electrode 410, and the connecting electrode 218. The pixel definition layer 300 is provided with an auxiliary electrode hole 301 and a via hole 302. The auxiliary electrode hole 301 penetrates the pixel definition layer 300 to expose the connecting electrode 218. The auxiliary electrode hole 301 is disposed corresponding to the metal conductive portion 208 and the first extension portion 2041. The via hole 302 penetrates the pixel definition layer 300 to expose the lower electrode 410. The light-emitting layer 420 is disposed on the pixel definition layer 300 and extends into the auxiliary electrode hole 301 and the via hole 302 to connect to the connecting electrode 218 and the lower electrode 410, respectively. The light-emitting layer 420 is an organic light-emitting layer. The upper electrode 430 is disposed on the light-emitting layer 420 and extends into the auxiliary electrode hole 301. The upper electrode 430 located in the auxiliary electrode hole 301 is an auxiliary electrode. The second projection, the first projection, the third projection and the orthographic projection of the connection structure on the substrate 100 at least partially overlap. The lower electrode 410 is a reflective anode, and the upper electrode 430 is a transparent cathode.

[0066] In one embodiment, the lower electrode 410 and the connecting electrode 218 are made of the same material. The materials of the lower electrode 410 and the connecting electrode 218 include one or a combination of indium zinc oxide, silver, and indium tin oxide. The materials of the lower electrode 410 and the connecting electrode 218 may also be other materials. The lower electrode 410 and the connecting electrode 218 may be composed of multiple layers, such as indium zinc oxide, silver, and indium zinc oxide stacked in sequence.

[0067] In this embodiment, the display panel 10 is a top emission display panel 10 .

[0068] In another embodiment, the display panel 10 is a bottom emission display panel 10. The lower electrode 410 is a transparent anode, and the upper electrode 430 is a reflective cathode.

[0069] When a bright spot defect occurs on the display panel 10, laser irradiation is performed on the overlapping area of ​​the first projection, the second projection, the third projection and the positive projection of the connection structure on the substrate 100, and the first extension portion 2041 will be connected to the metal conductive portion 208, the connection structure and the upper electrode 430, thereby realizing the darkening of the bright spot on the display panel 10.

[0070] In the present application, by providing a first extension portion 2041 connected to the transistor, and setting the first projection to at least partially overlap with the second projection, when a bright spot defect occurs on the display panel 10, a laser is used to irradiate the first extension portion 2041 on the side of the substrate 100 away from the light-emitting structure 400, so that the first extension portion 2041 can be connected to the upper electrode 430, thereby achieving the purpose of repairing the bright spot defect and reducing the difficulty of repairing the bright spot defect. At the same time, only one laser is needed to connect the first extension portion 2041 to the upper electrode 430, saving the time required for repair, thereby improving the efficiency of repairing the bright spot defect; the first extension portion 2041 is a through The semiconductor portion 205a is extended toward the non-luminous area 12, and there is no need to increase the process technology of the display panel 10, which shortens the production cycle, is conducive to the rapid preparation of the display panel 10, and saves the number of masks, thereby reducing production costs; a metal conductive portion 208 is provided on the first extension portion 2041, and the third projection is set to at least partially overlap with the first projection and the second projection. Since the metal conductive portion 208 is composed of metal, it is easy to conduct electricity between the first extension portion 2041 and the upper electrode 430, that is, the electrical signal of the upper electrode 430 can be well transmitted to the first extension portion 2041, thereby further improving the success rate of repairing defective bright spots.

[0071] In the present application, a connecting structure is provided between the first extension portion 2041 and the upper electrode 430, and the orthographic projection of the connecting structure on the substrate 100 is set to at least partially overlap with the first projection, the second projection and the third projection, so that when repairing a bright spot, the connecting structure can serve as an intermediate transition structure, shortening the conduction distance between the first extension portion 2041 and the upper electrode 430, thereby further improving the success rate of repair. At the same time, because the first conductive portion 215 is provided in the fourth through hole 222 of the passivation layer 214 and the connecting electrode 218 is provided in the sixth through hole 224 of the flat layer 217, the number of insulating layers through which energy passes during laser repair is reduced, thereby further improving the success rate of repairing a bright spot.

[0072] In the present application, an auxiliary electrode hole 301 is provided on the pixel definition layer 300, and the auxiliary electrode hole 301 is located directly above the first extension portion 2041, so that when repairing a bad bright spot, the repair point can be determined according to the position of the auxiliary electrode hole 301, avoiding the laser irradiating other metal layers or taking more time to find the repair point, thereby improving the accuracy and efficiency of repairing the bad bright spot; the auxiliary electrode hole 301 is provided on the pixel definition layer 300, because the auxiliary electrode hole 301 passes through the pixel definition layer 300, further reducing the number of insulating layers that the laser needs to pass through, thereby improving the success rate of repairing the bad bright spot.

[0073] It should be noted that the film structure of the display panel 10 of the present application can be removed as needed, such as the connection structure, the passivation layer 214 , the planarization layer 217 and the interlayer dielectric layer 210 .

[0074] See also Figure 2 ,It should be noted that the difference between the second structure and the first structure is:

[0075] The epitaxial conductor portion 204 also includes a second extension portion 2042. The light shielding portion 201 is connected to the second extension portion 2042, and the light shielding portion 201 is connected to one of the first electrode 212 and the second electrode 213. Specifically, the second extension portion 2042 is located directly below the first extension portion 2041. The second extension portion 2042 is formed by the light shielding portion 201 extending toward the non-luminous region 12, and the second extension portion 2042 is connected to the light shielding portion 201. The orthographic projection of the first extension portion 2041 on the substrate 100 and the orthographic projection of the second extension portion 2042 on the substrate 100 at least partially overlap, and the orthographic projections of the first extension portion 2041 on the substrate 100, the orthographic projections of the second extension portion 2042 on the substrate 100, the orthographic projections of the connection structure on the substrate 100, and the orthographic projections of the upper electrode 430 on the substrate 100 at least partially overlap. The other structures are the same as the first structure and are not repeated here.

[0076] In the present application, the extension conductor portion 204 is composed of the first extension portion 2041 and the second extension portion 2042, so that when repairing a bright spot, the extension conductor portion 204 serves as a transition portion between the second extension portion 2042 and the upper electrode 430, shortening the conduction distance between the second extension portion 2042 and the upper electrode 430, thereby further improving the success rate of repairing the bright spot.

[0077] When a bright spot defect occurs on the display panel 10, laser irradiation is performed on the overlapping area of ​​the first projection, the second projection, the third projection and the positive projection of the connection structure on the substrate 100 to connect the second extension portion 2042 with the first extension portion 2041, the metal conductive portion 208, the connection structure and the upper electrode 430, thereby realizing the darkening of the bright spots on the display panel 10.

[0078] See also Figure 3 ,It should be noted that the difference between the third structure and the first structure is:

[0079] The transistor is a bottom-gate transistor. The buffer layer 203 and light shielding portion 201 are removed. The gate 209 is positioned in the light shielding portion 201. The gate insulating portion 207 is positioned in the buffer layer 203. The first electrode 212 is connected only to the main conductor portion 205b. The remaining structure is the same as the first structure and will not be repeated here.

[0080] When a bright spot defect occurs on the display panel 10, laser irradiation is performed on the overlapping area of ​​the first projection, the second projection, the third projection and the positive projection of the connection structure on the substrate 100, and the first extension portion 2041 will be connected to the metal conductive portion 208, the connection structure and the upper electrode 430, thereby realizing the darkening of the bright spot on the display panel 10.

[0081] The present application provides a display panel 10, which is provided with an epitaxial conductor portion 204 connected to the transistor and connected to the upper electrode 430, so that the bright spots of the display panel 10 are darkened, the problem of poor bright spots in the display panel 10 is repaired, and the difficulty of repairing the poor bright spots is reduced. At the same time, the epitaxial conductor portion 204 is connected to the upper electrode 430 after only one laser irradiation, saving the time required for repair, thereby improving the efficiency of repairing the poor bright spots; the epitaxial conductor portion 204 is formed by extending the semiconductor portion 205a toward the non-luminous area 12, and there is no need to increase the process technology of the display panel 10, shortening the production cycle, facilitating the rapid preparation of the display panel 10, and saving the number of masking times, thereby reducing production costs.

[0082] The present application also provides a display panel, which includes a plurality of sub-pixels, each sub-pixel including an adjacent light-emitting area and a non-light-emitting area, the display panel including a substrate, a transistor layer and a light-emitting structure layer, the transistor layer being arranged on the substrate, the transistor layer including a transistor and an epitaxial conductor portion, the transistor being located in the light-emitting area, the transistor including a first electrode and a second electrode that are arranged in the same layer and spaced apart, the epitaxial conductor portion being located in the non-light-emitting area, the transistor also including an active portion located below the first electrode, the epitaxial conductor portion including a first epitaxial portion, the active portion being connected to the first epitaxial portion, and the active portion being connected to the first electrode or the second electrode; the light-emitting structure layer being arranged on the transistor layer, the light-emitting structure layer including a lower electrode and an upper electrode that are stacked, the lower electrode being connected to the first electrode or the second electrode, the upper electrode extending from the light-emitting area to the non-light-emitting area, and the upper electrode being connected to the epitaxial conductor portion.

[0083] In the present application, the epitaxial conductor portion is configured to be connected to the active portion, and the active portion is connected to the first electrode or the second electrode, one of the first electrode or the second electrode is connected to the lower electrode, the lower electrode is connected to the upper electrode, the upper electrode extends to the non-luminous area, and the orthographic projection of the upper electrode on the substrate at least partially overlaps with the orthographic projection of the epitaxial conductor portion on the substrate. After the epitaxial conductor portion is irradiated with a laser, the epitaxial conductor portion is connected to the upper electrode with which it overlaps to form a short circuit, thereby darkening the bright spots of the display panel, repairing the problem of poor bright spots of the display panel, and improving the success rate of repairing poor bright spots.

[0084] See also Figure 4 , the present application provides a display panel 10. The present application Figure 4 The display panel 10 provided by this application Figure 1 The display panel 10 is provided after laser repair. The display panel 10 includes a plurality of sub-pixels, each of which includes an adjacent light-emitting region 11 and a non-light-emitting region 12. The display panel 10 includes a substrate 100, a transistor layer 200, a pixel definition layer 300, and a light-emitting structure layer 400.

[0085] The transistor layer 200 is disposed on the substrate 100. The transistor layer 200 includes a transistor and a first epitaxial portion 2041. The transistor includes a first electrode 212 and a second electrode 213 disposed in the same layer and spaced apart. The first epitaxial portion 2041 is located in the non-luminous region 12. The transistor also includes an active portion 205 located below the first electrode 212. The epitaxial conductor portion 204 includes the first epitaxial portion 2041. The active portion 205 is connected to the first epitaxial portion 2041, and the active portion 205 is connected to the first electrode 212 or the second electrode 213. The first epitaxial portion 2041 is formed by the active portion 205 extending toward the non-luminous region 12.

[0086] Specifically, the transistor layer 200 includes a light shielding portion 201, a first electrode plate 202, a buffer layer 203, a first epitaxial portion 2041, an active portion 205, a second electrode plate 206, a gate insulating portion 207, a metal conductive portion 208, a gate 209, an interlayer dielectric layer 210, a transition portion 211, a first electrode 212, a second electrode 213, a passivation layer 214, a first conductive portion 215, a second conductive portion 216, a planarization layer 217, and a connecting electrode 218. The active portion 205 includes a semiconductor portion 205a and two conductor portions 205b disposed on either side thereof. The first conductive portion 215, the transition portion 211, and the connecting electrode 218 constitute the connection structure of the display panel 10. The light shielding portion 201, the active portion 205, the gate insulating portion 207, the gate 209, the first electrode 212, and the second electrode 213 constitute the transistors in the transistor layer 200. The transistor layer 200 includes a plurality of transistors that are spaced apart and disposed in the same layer.

[0087] Specifically, the light shielding portion 201 and the first electrode plate 202 are disposed on the same layer and spaced apart on the substrate 100. The first electrode plate 202 is located in the light-emitting region 11. The first electrode plate 202 and the light shielding portion 201 are formed of the same metal material. The materials of the first electrode plate 202 and the light shielding portion 201 include one or a combination of Cu and MoTi. Optionally, the materials of the first electrode plate 202 and the light shielding portion 201 can also be other materials.

[0088] Next, the buffer layer 203 is disposed on the light shielding portion 201 , the first electrode plate 202 and the substrate 100 .

[0089] Next, the active portion 205 and the first epitaxial portion 2041 are arranged in the same layer as the second electrode 206 and spaced apart. The first epitaxial portion 2041 is connected to the main conductor portion 205b. The first epitaxial portion 2041 is located in the non-luminous region 12. The first epitaxial portion 2041 is formed by extending the main conductor portion 205b into the non-luminous region 12. The first epitaxial portion 2041 is connected to the upper electrode 430 located directly above it. The semiconductor portion 205a is located above the light-shielding portion 201. The second electrode 206 is located above the first electrode 202. The active portion 205, the first epitaxial portion 2041, and the second electrode 206 are formed of the same material. The active portion 205, the first epitaxial portion 2041, and the second electrode 206 include one of metal oxides, amorphous silicon, or polycrystalline silicon. The metal oxide is, for example, indium gallium zinc oxide or indium gallium tin oxide. Alternatively, the metal oxide may be other materials.

[0090] Please continue reading Figure 4In one embodiment, the first extension portion 2041 has the same thickness H as the active portion 205 and the second electrode plate 206. The thickness H of the active portion 205, the first extension portion 2041, and the second electrode plate 206 is 100-300 nanometers. Specifically, the thickness H of the active portion 205, the first extension portion 2041, and the second electrode plate 206 can be 100 nanometers, 150 nanometers, 200 nanometers, 250 nanometers, or 300 nanometers.

[0091] In the present application, the thickness H of the first epitaxial portion 2041 is set to 100-300 nanometers. Since the thickness of the first epitaxial portion 2041 is relatively thin, when the first epitaxial portion 2041 is used to repair a bad bright spot, only a small amount of laser energy is needed to connect the first epitaxial portion 2041 to the upper electrode, that is, to short-circuit the first epitaxial portion 2041 and the upper electrode 430, thereby improving the success rate of the repair.

[0092] Please continue reading Figure 4 , then, the gate insulating portion 207 is provided on the semiconductor portion 205a.

[0093] Please continue reading Figure 4 Then, a metal via 208 is disposed on the first extension 2041. The metal via 208 is connected to the first extension 2041 and the top electrode. A gate 209 is disposed on the gate insulating portion 207 and spaced apart from the metal via 208.

[0094] In the present application, the first extension portion 2041 is not made of metal, but the upper electrode 430 is made of metal. A metal conductive portion 208 is provided on the first extension portion 2041 to be in direct contact with the metal, so that the first extension portion 2041 and the upper electrode 430 can be easily conductive, so that the electrical signal of the upper electrode 430 can be well transmitted to the first extension portion 2041, thereby further improving the success rate of repairing defective bright spots.

[0095] Please continue reading Figure 4 Next, an interlayer dielectric layer 210 is disposed on the buffer layer 203, the first epitaxial portion 2041, the active portion 205, the second electrode 206, the gate insulating portion 207, the metal conductive portion 208, and the gate 209. The interlayer dielectric layer 210 is provided with a first through-hole 219, a second through-hole 220, and a third through-hole 221. The first through-hole 219 penetrates the interlayer dielectric layer 210 to expose the main conductor portion 205b connected to the first epitaxial portion 2041. The second through-hole 220 penetrates the interlayer dielectric layer 210 to expose the main conductor portion 205b located away from the first epitaxial portion 2041. The third through-hole 221 penetrates the interlayer dielectric layer 210 and the buffer layer 203 to expose the light shielding portion 201. The second through-hole 220 and the third through-hole 221 are located on one side of the semiconductor portion 205a. The first through-hole 219 is located on the other side of the semiconductor portion 205a.

[0096] Please continue reading Figure 4 Next, the first electrode 212, the second electrode 213, and the transition portion 211 are arranged in the same layer and spaced apart on the interlayer dielectric layer 210. The second electrode 213 is located between the first electrode 212 and the transition portion 211. The second electrode 213 extends into the first through-hole 219 and connects to the main conductor portion 205b connected to the first extension portion 2041. The first electrode 212 extends into the second through-hole 220 and the third through-hole 221 and connects to the main conductor portion 205b and the light shielding portion 201. The first electrode 212 is located in the light-emitting region 11. The transition portion 211 is located in the non-light-emitting region 12 and is located directly above the first extension portion 2041 and the metal conductive portion 208. The transition portion 211 is connected to the top electrode 430 and the metal conductive portion 208. In other words, the connection structure is located directly above the first extension portion 2041 and the metal conductive portion 208, and the connection structure is connected to the top electrode 430 and the metal conductive portion 208. The first electrode 212 is a source electrode, and the second electrode 213 is a drain electrode.

[0097] In another embodiment, the first electrode 212 is a drain electrode, and the second electrode 213 is a source electrode.

[0098] Please continue reading Figure 4 Next, a passivation layer 214 is disposed on the transition portion 211, the first electrode 212, and the second electrode 213. The passivation layer 214 is provided with a fourth through hole 222 and a fifth through hole 223. The fourth through hole 222 penetrates the passivation layer 214 to expose the transition portion 211. The fifth through hole 223 penetrates the passivation layer 214 to expose the first electrode 212.

[0099] Please continue reading Figure 4 , then, the first conductive portion 215 and the second conductive portion 216 are arranged on the same layer and spaced apart on the passivation layer 214. The first conductive portion 215 extends into the fourth through hole 222 and is connected to the transition portion 211. The first conductive portion 215 is connected to the transition portion 211 and the upper electrode 430. The second conductive portion 216 extends into the fifth through hole 223 and is connected to the first electrode 212. The first conductive portion 215 and the second conductive portion 216 are formed of the same metal material. The material of the first conductive portion 215 and the second conductive portion 216 includes MoTi. Optionally, the material of the first conductive portion 215 and the second conductive portion 216 can also be other materials.

[0100] Please continue reading Figure 4 Next, a planarization layer 217 is disposed on the passivation layer 214, the first conductive portion 215, and the second conductive portion 216. The planarization layer 217 is provided with a sixth through-hole 224 and a seventh through-hole 225. The sixth through-hole 224 penetrates the planarization layer 217 to expose the first conductive portion 215. The seventh through-hole 225 penetrates the planarization layer 217 to expose the second conductive portion 216.

[0101] Please continue reading Figure 4 The light-emitting structure layer 400 is disposed on the transistor layer 200. The light-emitting structure layer 400 includes a lower electrode 410 and an upper electrode 430 that are stacked. The lower electrode 410 is connected to the first electrode 212. The upper electrode 430 extends from the light-emitting area 11 to the non-light-emitting area 12. Specifically, the light-emitting structure layer 400 includes a plurality of light-emitting structure portions. Each light-emitting structure portion is connected to a transistor. Each light-emitting structure portion includes a lower electrode 410, a light-emitting layer 420, and an upper electrode 430, that is, the light-emitting structure layer 400 includes a lower electrode 410, a light-emitting layer 420, and an upper electrode 430. The connecting electrode 218 is on the same layer as the lower electrode 410 and is spaced apart and disposed on the flat layer 217. The connecting electrode 218 extends into the sixth through hole 224 and is connected to the first conductive portion 215, and is also connected to the upper electrode 430. The lower electrode 410 extends into the seventh through hole 225 and is connected to the second conductive portion 216.

[0102] Next, the pixel definition layer 300 is disposed on the planar layer 217, the lower electrode 410, and the connecting electrode 218. The pixel definition layer 300 is provided with an auxiliary electrode hole 301 and a via hole 302. The auxiliary electrode hole 301 penetrates the pixel definition layer 300 to expose the connecting electrode 218. The auxiliary electrode hole 301 is disposed corresponding to the metal conductive portion 208 and the first extension portion 2041. The via hole 302 penetrates the pixel definition layer 300 to expose the lower electrode 410. The light-emitting layer 420 is disposed on the pixel definition layer 300 and extends into the auxiliary electrode hole 301 and the via hole 302 to connect to the connecting electrode 218 and the lower electrode 410, respectively. The light-emitting layer 420 is an organic light-emitting layer 420. The upper electrode 430 is disposed on the light-emitting layer 420 and extends into the auxiliary electrode hole 301 to connect to the connecting electrode 218. The upper electrode 430 located in the auxiliary electrode hole 301 is an auxiliary electrode. The lower electrode 410 is a reflective anode, and the upper electrode 430 is a transparent cathode.

[0103] In one embodiment, the lower electrode 410 and the connecting electrode 218 are made of the same material. The materials of the lower electrode 410 and the connecting electrode 218 include one or a combination of indium zinc oxide, silver, and indium tin oxide. The materials of the lower electrode 410 and the connecting electrode 218 may also be other materials. The lower electrode 410 and the connecting electrode 218 may be composed of multiple layers, such as indium zinc oxide, silver, and indium zinc oxide stacked in sequence.

[0104] In this embodiment, the display panel 10 is a top emission display panel 10 .

[0105] In another embodiment, the display panel 10 is a bottom emission display panel 10. The lower electrode 410 is a transparent anode, and the upper electrode 430 is a reflective cathode.

[0106] In the present application, by providing a first extension portion 2041 connected to the transistor and connected to the upper electrode 430, the bright spot of the display panel 10 is darkened, the bright spot problem of the display panel 10 is repaired, and the difficulty of repairing the bright spot is reduced. At the same time, the first extension portion 2041 is connected to the upper electrode 430 after only one laser irradiation, which saves the time required for repair and thus improves the efficiency of repairing the bright spot. The first extension portion 2041 is formed by extending the semiconductor portion 205a toward the non-luminous area 12. There is no need to increase the process technology of the display panel 10, shortening the production cycle, facilitating the rapid preparation of the display panel 10, and saving the number of masks, thereby reducing production costs. A metal conductive portion 208 connected to the first extension portion 2041 is provided. Because the metal conductive portion 208 is made of metal, the first extension portion 2041 and the upper electrode 430 are easily conductive, that is, the electrical signal of the upper electrode 430 can be well transmitted to the first extension portion 2041, thereby further improving the success rate of repairing the bright spot.

[0107] In the present application, a connecting structure is provided between the first extension portion 2041 and the upper electrode 430. The connecting structure can serve as an intermediate transition structure, so that the connecting structure is connected to the first extension portion 2041 and the upper electrode 430, which can shorten the conduction distance between the first extension portion 2041 and the upper electrode 430, thereby further improving the success rate of repair. At the same time, because the first conductive portion 215 is provided in the fourth through hole 222 of the passivation layer 214 and the connecting electrode 218 is provided in the sixth through hole 224 of the flat layer 217, the number of insulating layers that the energy passes through during laser repair is reduced, thereby further improving the success rate of repairing bright spot defects.

[0108] In the present application, an auxiliary electrode hole 301 is provided on the pixel definition layer 300, and the auxiliary electrode hole 301 is located directly above the first extension portion 2041, so that when repairing a bad bright spot, the repair point can be determined according to the position of the auxiliary electrode hole 301, avoiding the laser irradiating other metal layers or taking more time to find the repair point, thereby improving the accuracy and efficiency of repairing the bad bright spot; the auxiliary electrode hole 301 is provided on the pixel definition layer 300, because the auxiliary electrode hole 301 passes through the pixel definition layer 300, further reducing the number of insulating layers that the laser needs to pass through, thereby improving the success rate of repairing the bad bright spot.

[0109] It should be noted that the film structure of the display panel 10 of the present application can be removed as needed, such as the connection structure, the passivation layer 214 , the planarization layer 217 and the interlayer dielectric layer 210 .

[0110] The present application also provides a display panel repair method to repair the display panel provided by the present application.

[0111] B11. Provide a panel to be repaired, the panel to be repaired comprising a plurality of sub-pixels, each sub-pixel comprising adjacent luminous and non-luminous regions, the panel to be repaired comprising:

[0112] substrate;

[0113] a transistor layer disposed on a substrate, the transistor layer including a transistor and an epitaxial conductor portion, the transistor being located in a light-emitting region, the transistor including a first electrode and a second electrode disposed in the same layer and spaced apart from each other, the epitaxial conductor portion being located in a non-light-emitting region, the transistor further including an active portion located below the first electrode, the epitaxial conductor portion including a first epitaxial portion, the active portion being connected to the first epitaxial portion, and the active portion being connected to the first electrode or the second electrode;

[0114] a light-emitting structure layer, disposed on the transistor layer, the light-emitting structure layer comprising a lower electrode and an upper electrode stacked together, the lower electrode being connected to the first electrode or the second electrode, and the upper electrode extending from the light-emitting region to the non-light-emitting region;

[0115] The orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate.

[0116] B12. Connect the epitaxial conductor to the upper electrode.

[0117] In the present application, an epitaxial conductor portion is provided to be connected to the transistor, and the orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate. When a bright spot occurs on the display panel, the overlapping epitaxial conductor portion and the upper electrode are laser-irradiated, so that the epitaxial conductor portion can be connected to the upper electrode, thereby repairing the panel to be repaired and improving the success rate of repairing the bright spot.

[0118] See also Figure 5 and Figure 6 The present application also provides a display panel repair method to repair the display panel 10 provided in the present application.

[0119] B11. Provide a panel to be repaired, the panel to be repaired comprising a plurality of sub-pixels, each sub-pixel comprising adjacent luminous and non-luminous regions, the panel to be repaired comprising:

[0120] substrate;

[0121] a transistor layer disposed on a substrate, the transistor layer including a transistor and an epitaxial conductor portion, the transistor being located in a light-emitting region, the transistor including a first electrode and a second electrode disposed in the same layer and spaced apart from each other, the epitaxial conductor portion being located in a non-light-emitting region, the transistor further including an active portion located below the first electrode, the epitaxial conductor portion including a first epitaxial portion, the active portion being connected to the first epitaxial portion, and the active portion being connected to the first electrode or the second electrode;

[0122] a light-emitting structure layer, disposed on the transistor layer, the light-emitting structure layer comprising a lower electrode and an upper electrode stacked together, the lower electrode being connected to the first electrode or the second electrode, and the upper electrode extending from the light-emitting region to the non-light-emitting region;

[0123] The orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate.

[0124] The panel to be repaired 20 includes a substrate 100 , a transistor layer 200 and a light emitting structure layer 400 .

[0125] Transistor layer 200 is disposed on substrate 100. Transistor layer 200 includes transistors and an epitaxial conductor portion 204. The transistor includes a first electrode 212 and a second electrode 213 disposed in the same layer and spaced apart from each other. The transistor also includes an active portion 205 located below first electrode 212. Epitaxial conductor portion 204 includes a first epitaxial portion 2041. Active portion 205 is connected to first epitaxial portion 2041, and active portion 205 is connected to first electrode 212 or second electrode 213.

[0126] Specifically, the transistor layer 200 includes a light shielding portion 201, a first electrode plate 202, a buffer layer 203, a first epitaxial portion 2041, an active portion 205, a second electrode plate 206, a gate insulating portion 207, a metal conductive portion 208, a gate 209, an interlayer dielectric layer 210, a transition portion 211, a first electrode 212, a second electrode 213, a passivation layer 214, a first conductive portion 215, a second conductive portion 216, a planarization layer 217, and a connecting electrode 218. The active portion 205 includes a semiconductor portion 205a and two conductor portions 205b disposed on either side thereof. The first conductive portion 215, the transition portion 211, and the connecting electrode 218 form a connection structure. The light shielding portion 201, the active portion 205, the gate insulating portion 207, the gate 209, the first electrode 212, and the second electrode 213 constitute the transistor in the transistor layer 200. The transistor layer 200 includes a plurality of transistors spaced apart and arranged in the same layer. In this embodiment, the transistors are top-gate transistors.

[0127] Specifically, the light shielding portion 201 and the first electrode plate 202 are disposed on the same layer and spaced apart on the substrate 100. The first electrode plate 202 is located in the light-emitting region 11. The first electrode plate 202 and the light shielding portion 201 are formed of the same metal material. The materials of the first electrode plate 202 and the light shielding portion 201 include one or a combination of Cu and MoTi. Optionally, the materials of the first electrode plate 202 and the light shielding portion 201 can also be other materials.

[0128] Next, the buffer layer 203 is disposed on the light shielding portion 201 , the first electrode plate 202 and the substrate 100 .

[0129] Next, the active portion 205 and the first extension portion 2041 are arranged in the same layer as the second electrode plate 206 and spaced apart. The first extension portion 2041 is connected to the main conductor portion 205b. The first extension portion 2041 is located in the non-luminous region 12. The first extension portion 2041 is formed by the main conductor portion 205b extending into the non-luminous region 12. The orthographic projection of the first extension portion 2041 on the substrate 100 is the first projection. The orthographic projection of the upper electrode 430 on the substrate 100 is the second projection. The first and second projections at least partially overlap. When repairing a bright spot defect, the first extension portion 2041 is used to illuminate the first extension portion 2041 with a laser, causing it to connect to the subsequent upper electrode 430, thereby forming a short circuit with the upper electrode 430. The laser is a laser. The semiconductor portion 205a is located above the light shielding portion 201. The second electrode plate 206 is located above the first electrode plate 202. The active portion 205, first epitaxial portion 2041, and second plate 206 are formed from the same material and fabricated using the same photomask. They are comprised of a metal oxide, amorphous silicon, or polycrystalline silicon. The metal oxide can be indium gallium zinc oxide or indium gallium tin oxide, for example. Alternatively, the metal oxide can be made of other materials.

[0130] In one embodiment, the first extension portion 2041 has the same thickness H as the active portion 205 and the second electrode plate 206. The thickness H of the active portion 205, the first extension portion 2041, and the second electrode plate 206 is 100-300 nanometers. Specifically, the thickness H of the active portion 205, the first extension portion 2041, and the second electrode plate 206 can be 100 nanometers, 150 nanometers, 200 nanometers, 250 nanometers, or 300 nanometers.

[0131] Next, the gate insulating portion 207 is provided on the semiconductor portion 205 a .

[0132] Next, a metal via 208 is disposed on the first extension 2041. The metal via 208 is used to connect the first extension 2041 to the top electrode when repairing a bright spot defect. A gate 209 is disposed on the gate insulator 207 and spaced apart from the metal via 208. The orthographic projection of the metal via 208 on the substrate 100 is the third projection. The third projection at least partially overlaps with the first and second projections.

[0133] Next, an interlayer dielectric layer 210 is disposed over the buffer layer 203, the first epitaxial portion 2041, the active portion 205, the second electrode 206, the gate insulating portion 207, the metal conductive portion 208, and the gate 209. The interlayer dielectric layer 210 is provided with a first through-hole 219, a second through-hole 220, and a third through-hole 221. The first through-hole 219 penetrates the interlayer dielectric layer 210 to expose the main conductor portion 205b connected to the first epitaxial portion 2041. The second through-hole 220 penetrates the interlayer dielectric layer 210 to expose the main conductor portion 205b located away from the first epitaxial portion 2041. The third through-hole 221 penetrates the interlayer dielectric layer 210 and the buffer layer 203 to expose the light shielding portion 201. The second through-hole 220 and the third through-hole 221 are located on one side of the semiconductor portion 205a. The first through-hole 219 is located on the other side of the semiconductor portion 205a.

[0134] Next, the first electrode 212, the second electrode 213, and the transition portion 211 are arranged in the same layer and spaced apart on the interlayer dielectric layer 210. The second electrode 213 is located between the first electrode 212 and the transition portion 211. The second electrode 213 extends into the first through-hole 219 and connects to the main conductor portion 205b connected to the first extension portion 2041. The first electrode 212 extends into the second through-hole 220 and the third through-hole 221 and connects to the main conductor portion 205b and the light shielding portion 201. The first electrode 212 is located in the light-emitting region 11. The transition portion 211 is located in the non-light-emitting region 12. The orthographic projection of the transition portion 211 on the substrate 100 at least partially overlaps with the first and second projections, that is, the orthographic projection of the connection structure on the substrate 100 at least partially overlaps with the first and second projections. The first electrode 212 is the source electrode. The second electrode 213 is the drain electrode.

[0135] Next, a passivation layer 214 is disposed on the transition portion 211, the first electrode 212, and the second electrode 213. The passivation layer 214 is provided with a fourth through hole 222 and a fifth through hole 223. The fourth through hole 222 penetrates the passivation layer 214 to expose the transition portion 211. The fifth through hole 223 penetrates the passivation layer 214 to expose the first electrode 212.

[0136] Next, the first conductive portion 215 and the second conductive portion 216 are arranged on the same layer and spaced apart on the passivation layer 214. The first conductive portion 215 extends into the fourth through hole 222 and is connected to the transition portion 211. The orthographic projection of the first conductive portion 215 on the substrate 100 at least partially overlaps with the first projection and the second projection, that is, the orthographic projection of the connection structure on the substrate 100 at least partially overlaps with the first projection and the second projection. The second conductive portion 216 extends into the fifth through hole 223 and is connected to the first electrode 212. The first conductive portion 215 and the second conductive portion 216 are formed of the same metal material. The material of the first conductive portion 215 and the second conductive portion 216 includes MoTi. Optionally, the material of the first conductive portion 215 and the second conductive portion 216 can also be other materials.

[0137] Next, a planarization layer 217 is disposed on the passivation layer 214, the first conductive portion 215, and the second conductive portion 216. The planarization layer 217 is provided with a sixth through-hole 224 and a seventh through-hole 225. The sixth through-hole 224 penetrates the planarization layer 217 to expose the first conductive portion 215. The seventh through-hole 225 penetrates the planarization layer 217 to expose the second conductive portion 216.

[0138] The light-emitting structure layer 400 is disposed on the transistor layer 200. The light-emitting structure layer 400 includes a lower electrode 410 and an upper electrode 430, which are stacked. The lower electrode 410 is connected to the first electrode 212. The upper electrode 430 extends from the light-emitting region 11 to the non-light-emitting region 12. The orthographic projection of the first extension portion 2041 on the substrate 100 is the first projection. The orthographic projection of the upper electrode 430 on the substrate 100 is the second projection. The first projection and the second projection at least partially overlap.

[0139] Specifically, the light-emitting structure layer 400 is disposed on the transistor layer 200. The light-emitting structure layer 400 includes a stacked lower electrode 410 and an upper electrode 430. The lower electrode 410 is connected to the first electrode 212. The upper electrode 430 extends from the light-emitting region 11 to the non-light-emitting region 12. Specifically, the light-emitting structure layer 400 includes multiple light-emitting structure portions. Each light-emitting structure portion is connected to a transistor. Each light-emitting structure portion includes a lower electrode 410, a light-emitting layer 420, and an upper electrode 430. In other words, the light-emitting structure layer 400 includes the lower electrode 410, the light-emitting layer 420, and the upper electrode 430. The connecting electrode 218 is disposed on the same layer as the lower electrode 410 and spaced apart on the planar layer 217. The connecting electrode 218 extends into the sixth through hole 224 and connects to the first conductive portion 215. The orthographic projection of the connecting electrode 218 on the substrate 100 at least partially overlaps with the first projection and the second projection. The orthographic projection of the connecting structure on the substrate 100 at least partially overlaps with the first projection and the second projection. The lower electrode 410 extends into the seventh through hole 225 and is connected to the second conductive portion 216 .

[0140] Next, the pixel definition layer 300 is disposed on the planar layer 217, the lower electrode 410, and the connecting electrode 218. The pixel definition layer 300 is provided with an auxiliary electrode hole 301 and a via hole 302. The auxiliary electrode hole 301 penetrates the pixel definition layer 300 to expose the connecting electrode 218. The auxiliary electrode hole 301 is disposed corresponding to the metal conductive portion 208 and the first extension portion 2041. The via hole 302 penetrates the pixel definition layer 300 to expose the lower electrode 410. The light-emitting layer 420 is disposed on the pixel definition layer 300 and extends into the auxiliary electrode hole 301 and the via hole 302 to connect to the connecting electrode 218 and the lower electrode 410, respectively. The light-emitting layer 420 is an organic light-emitting layer 420. The upper electrode 430 is disposed on the light-emitting layer 420 and extends into the auxiliary electrode hole 301. The upper electrode 430 located in the auxiliary electrode hole 301 is the auxiliary electrode. The second projection at least partially overlaps with the first projection, the third projection, and the orthographic projection of the connection structure on the substrate 100. The lower electrode 410 is a reflective anode, and the upper electrode 430 is a transparent cathode.

[0141] B12. Connect the epitaxial conductor to the upper electrode.

[0142] When a bright spot in a certain light-emitting structure layer 400 of the panel 20 to be repaired needs to be repaired, laser irradiation is performed on the overlapping area of ​​the first projection, the second projection, the third projection and the positive projection of the connection structure on the substrate 100 from the side of the substrate 100 away from the light-emitting structure layer 400. The laser irradiation melts the interlayer dielectric layer 210 and the light-emitting layer 420 in the overlapping area, so that the first extension part 2041, the metal conductive part 208, the connection structure and the upper electrode 430 in the overlapping area are connected, and the panel 20 to be repaired forms the display panel 10 after repair.

[0143] Since the first electrode 212 is connected to the active part 205 and the lower electrode 410, the first extension part 2041, the metal conductive part 208, the connection structure and the upper electrode 430 are conductive, which means that the upper electrode 430 and the lower electrode 410 are conductive, that is, the upper electrode 430 and the lower electrode 410 are short-circuited, and the voltage across the light-emitting layer 420 is 0, the light-emitting layer 420 does not emit light, and the bright spot is repaired to a dark spot.

[0144] In one embodiment, the power of the laser is 300 ATT-400 ATT. Specifically, the power of the laser can be 300 ATT, 340 ATT, 360 ATT, 380 ATT or 400 ATT.

[0145] In the present application, a first extension portion 2041 connected to the transistor is provided, and the first projection, the second projection, the third projection and the positive projection of the connection structure on the substrate 100 are set to at least partially overlap, so that when a bright spot appears on the panel 20 to be repaired, it can be connected to the upper electrode 430 when laser irradiation is used to repair the bright spot, thereby reducing the difficulty of repairing the bright spot and avoiding device waste. At the same time, only one laser is needed to connect the first extension portion 2041 to the upper electrode 430, saving the time required for repair, thereby improving the efficiency of repairing the bright spot. The first extension portion 2041 is an active portion. The first extension portion 2041 is formed by extending the first extension portion 205 toward the non-luminous area 12, without increasing the process technology of the display panel 10, shortening the production cycle, facilitating the rapid preparation of the display panel 10, and saving the number of masking operations, thereby reducing production costs; a metal conductive portion 208 is provided on the first extension portion 2041, and the third projection, the second projection, and the first projection are arranged to at least partially overlap. Because the metal conductive portion 208 is composed of metal, the electrical signal of the upper electrode 430 can be well transmitted to the first extension portion 2041, that is, the first extension portion 2041 and the upper electrode 430 are easily short-circuited, thereby further improving the success rate of repairing the bright spot defect. In addition, using this repair method to repair the bright spot defect will not damage the wiring of the transistor layer 200, nor will it cause other defects, and the repair success rate is high.

[0146] In another embodiment, if the first extension portion 2041 is formed by the active portion 205 extending toward the non-luminous area 12, and the second extension portion 2042 is formed by the shading portion 201 extending toward the non-luminous area 12, after laser irradiation of the overlapping area between the first extension portion 2041 and the second extension portion 2042, the metal conductive portion 208, the connecting structure and the upper electrode 430, the first extension portion 2041, the second extension portion 2042, the metal conductive portion 208, the connecting structure and the upper electrode 430 are connected, thereby darkening the bright spot.

[0147] The present application provides a method for repairing a display panel, wherein an epitaxial conductor portion 204 connected to a transistor is provided, a first epitaxial portion 2041 is formed by an active portion 205 extending toward a non-luminous region 12, and the first projection, the second projection, the third projection and the orthographic projection of the connection structure on the substrate 100 are arranged to at least partially overlap, or the first projection, the second projection and the orthographic projection of the connection structure on the substrate 100 are arranged to at least partially overlap, so that when a bright spot appears on the display panel 10, it can be connected to the upper electrode 430 when laser irradiation is used to repair the bright spot, thereby reducing the difficulty of repairing the bright spot and avoiding waste of devices. At the same time, only one laser is needed to connect the epitaxial conductor portion 204 to the upper electrode 430, saving the time required for repair, thereby improving the efficiency of repairing the bright spot; the first epitaxial portion 2041 is formed by an active portion 205 extending toward the non-luminous region 12, without increasing the process technology of the display panel 10, shortening the production cycle, facilitating the rapid preparation of the display panel 10, and saving the number of masking times, thereby reducing production costs.

[0148] The present application provides a display panel 10 and a method for repairing the display panel 10. The display panel 10 includes an epitaxial conductor portion 204 connected to a transistor. The epitaxial conductor portion 204 is formed by extending an active portion 205 toward a non-luminous region 12. The epitaxial conductor portion 204 and the active portion 205 are formed using a single photomask, simplifying the fabrication process of the epitaxial conductor portion 204 and, consequently, the fabrication process of the display panel 10, thereby reducing production costs. The epitaxial conductor portion 204 connected to the transistor is provided. The epitaxial conductor portion 204 is formed by extending an active portion 205 toward the non-luminous region 12. The first projection and the second projection are configured to at least partially overlap. This allows the display panel 10 to connect to the upper electrode 430 with a single laser beam when a bright spot defect occurs. This reduces repair time, improves the efficiency of repairing bright spot defects, and reduces costs. An auxiliary electrode hole 301 is provided on the pixel definition layer 300, and the auxiliary electrode hole 301 is located directly above the extension conductor portion 204, so that when repairing a bad bright spot, the repair point can be determined according to the position of the auxiliary electrode hole 301, avoiding the laser irradiating other metal layers or taking more time to find the repair point, thereby improving the accuracy and efficiency of repairing the bad bright spot; the auxiliary electrode hole 301 is provided on the pixel definition layer 300, because the auxiliary electrode hole 301 passes through the pixel definition layer 300, further reducing the number of insulating layers that the laser needs to pass through, thereby improving the success rate of repairing the bad bright spot.

[0149] The above is a detailed introduction to a display panel and a display panel repair method provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, characterized in that: The display panel includes a plurality of sub-pixels, each of the sub-pixels includes a light-emitting area and a non-light-emitting area that are adjacent to each other. The display panel includes: substrate; a transistor layer disposed on the substrate, the transistor layer comprising a transistor and an epitaxial conductor portion, the transistor being located in the light-emitting region, the transistor comprising a first electrode and a second electrode disposed in the same layer and spaced apart from each other, the epitaxial conductor portion being located in the non-light-emitting region, the transistor further comprising an active portion located below the first electrode, the epitaxial conductor portion comprising a first epitaxial portion, the active portion being connected to the first epitaxial portion, and the active portion being connected to the first electrode or the second electrode; and a light-emitting structure layer disposed on the transistor layer, the light-emitting structure layer comprising a lower electrode and an upper electrode stacked together, the lower electrode being connected to the first electrode or the second electrode, and the upper electrode extending from the light-emitting region to the non-light-emitting region; wherein the orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate; The first extension portion is formed by extending the active portion toward the non-luminous area; The transistor layer further includes a metal conducting portion, wherein the metal conducting portion is disposed on the first epitaxial portion, the metal conducting portion is connected to the first epitaxial portion, and is insulated from the upper electrode; The orthographic projection of the first extension portion on the substrate is a first projection, the orthographic projection of the upper electrode on the substrate is a second projection, and the orthographic projection of the metal conductive portion on the substrate is a third projection. The third projection at least partially overlaps with the first projection and the second projection.

2. The display panel according to claim 1, wherein: The transistor further includes a light shielding portion located below the first electrode. The epitaxial conductor portion further includes a second epitaxial portion. The light shielding portion is connected to the second epitaxial portion, and the light shielding portion is connected to the first electrode or the second electrode.

3. The display panel according to claim 1, wherein: The transistor further includes a gate insulating portion and a gate, wherein the gate insulating portion and the gate are sequentially stacked on the active portion.

4. The display panel according to claim 3, wherein: The metal conductive portion is arranged between the first epitaxial portion and the upper electrode. The metal conductive portion is spaced apart from the gate. The gate and the metal conductive portion are manufactured by one process. The metal conductive portion, the first epitaxial portion and the upper electrode are arranged correspondingly.

5. The display panel according to claim 4, wherein: The display panel also includes a pixel definition layer, which is arranged on the transistor layer and the lower electrode. An auxiliary electrode hole is provided in the pixel definition layer, and the auxiliary electrode hole is located in the non-luminous area. The auxiliary electrode hole passes through the pixel definition layer, and the auxiliary electrode hole is arranged corresponding to the first extension portion and the metal conductive portion. The upper electrode is arranged on the pixel definition layer, and the upper electrode extends into the auxiliary electrode hole.

6. The display panel according to claim 5, wherein: The display panel further includes a connection structure, which is arranged between the upper electrode and the metal conductive portion, and the connection structure is insulated from the upper electrode and the metal conductive portion. The connection structure, the first extension portion, the metal conductive portion and the upper electrode are correspondingly arranged.

7. The display panel according to claim 6, wherein: The connection structure includes a connection electrode, which is arranged on the transistor layer and is in the same layer as the lower electrode and spaced apart from each other.

8. The display panel according to claim 7, wherein: The connection structure includes a connecting portion and a first conductive portion. The connecting portion is arranged on a side of the first conductive portion close to the upper electrode. The connecting portion is in the same layer as the first electrode and the second electrode and is spaced apart.

9. The display panel according to claim 8, wherein: The transistor also includes a light-shielding portion, which is arranged corresponding to the active portion, the light-shielding portion is connected to the first electrode, the first electrode is connected to one end of the active portion and the upper electrode, the second electrode is connected to the first extension portion and the other end of the active portion, and the orthographic projection of the active portion on the substrate is staggered with the orthographic projection of the first extension portion on the substrate.

10. A display panel, characterized in that: The display panel includes a plurality of sub-pixels, each of the sub-pixels includes a light-emitting area and a non-light-emitting area that are adjacent to each other. The display panel includes: substrate; a transistor layer disposed on the substrate, the transistor layer comprising a transistor and an epitaxial conductor portion, the transistor being located in the light-emitting region, the transistor comprising a first electrode and a second electrode disposed in the same layer and spaced apart from each other, the epitaxial conductor portion being located in the non-light-emitting region, the transistor further comprising an active portion located below the first electrode, the epitaxial conductor portion comprising a first epitaxial portion, the active portion being connected to the first epitaxial portion, and the active portion being connected to the first electrode or the second electrode; and a light-emitting structure layer disposed on the transistor layer, the light-emitting structure layer comprising a lower electrode and an upper electrode stacked together, the lower electrode being connected to the first electrode or the second electrode, the upper electrode extending from the light-emitting region to the non-light-emitting region, and the upper electrode being connected to the epitaxial conductor portion; The first extension portion is formed by extending the active portion toward the non-luminous area; The transistor layer further includes a metal conducting portion, wherein the metal conducting portion is disposed on the first epitaxial portion, the metal conducting portion is connected to the first epitaxial portion, and is insulated from the upper electrode; The orthographic projection of the first extension portion on the substrate is a first projection, the orthographic projection of the upper electrode on the substrate is a second projection, and the orthographic projection of the metal conductive portion on the substrate is a third projection. The third projection at least partially overlaps with the first projection and the second projection.

11. The display panel according to claim 10, wherein: The transistor further includes a gate insulating portion and a gate, wherein the gate insulating portion and the gate are sequentially stacked on the active portion, the gate and the metal conducting portion are spaced apart, and the gate and the metal conducting portion are manufactured by one process.

12. The display panel according to claim 11, wherein: The display panel also includes a pixel definition layer, which is arranged on the transistor layer and the lower electrode. An auxiliary electrode hole is provided in the pixel definition layer, and the auxiliary electrode hole is located in the non-luminous area. The auxiliary electrode hole passes through the pixel definition layer, and the auxiliary electrode hole is arranged corresponding to the first extension portion. The upper electrode is arranged on the pixel definition layer, and the upper electrode extends into the auxiliary electrode hole and is connected to the first extension portion.

13. The display panel according to claim 12, wherein: The display panel further includes a connection structure, which is disposed between the pixel definition layer and the first extension portion, and is connected to the upper electrode and the first extension portion.

14. The display panel according to claim 10, wherein: The transistor further includes a light shielding portion located below the first electrode. The epitaxial conductor portion further includes a second epitaxial portion. The light shielding portion is connected to the second epitaxial portion, and the light shielding portion is connected to the first electrode or the second electrode.

15. A method for repairing a display panel, characterized in that: include: A panel to be repaired is provided, the panel to be repaired comprising a plurality of sub-pixels, each of the sub-pixels comprising a light-emitting region and a non-light-emitting region adjacent to each other, the panel to be repaired comprising: substrate; a transistor layer disposed on the substrate, the transistor layer comprising a transistor and an epitaxial conductor portion, the transistor being located in the light-emitting region, the transistor comprising a first electrode and a second electrode disposed in the same layer and spaced apart from each other, the epitaxial conductor portion being located in the non-light-emitting region, the transistor further comprising an active portion located below the first electrode, the epitaxial conductor portion comprising a first epitaxial portion, the active portion being connected to the first epitaxial portion, and the active portion being connected to the first electrode or the second electrode; and a light-emitting structure layer disposed on the transistor layer, the light-emitting structure layer comprising a lower electrode and an upper electrode stacked together, the lower electrode being connected to the first electrode or the second electrode, and the upper electrode extending from the light-emitting region to the non-light-emitting region; wherein the orthographic projection of the epitaxial conductor portion on the substrate at least partially overlaps with the orthographic projection of the upper electrode on the substrate; connecting the epitaxial conductor portion to the upper electrode; The first extension portion is formed by extending the active portion toward the non-luminous area; The transistor layer further includes a metal conducting portion, wherein the metal conducting portion is disposed on the first epitaxial portion, the metal conducting portion is connected to the first epitaxial portion, and is insulated from the upper electrode; The orthographic projection of the first extension portion on the substrate is a first projection, the orthographic projection of the upper electrode on the substrate is a second projection, and the orthographic projection of the metal conductive portion on the substrate is a third projection. The third projection at least partially overlaps with the first projection and the second projection.

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