Elastic wave device and module

Abstract

An elastic wave device includes: a wiring substrate, a device chip, a metal pattern, and a sealing portion; the device chip is mounted on the wiring substrate; the metal pattern is formed on an epitaxial portion of the wiring substrate; the sealing portion hermetically seals the device chip; and the metal pattern has an uneven or serrated portion, the sealing portion being coupled to both the metal pattern and the wiring substrate. This provides an elastic wave device with superior characteristics, namely better heat dissipation, excellent sealing between the sealing portion and the wiring substrate, and reduced coupling between the metal pattern through which the desired frequency band of electrical signal passes and the metal pattern through which the desired frequency band of electrical signal does not pass.

Description

Technical Field

[0001] This invention relates to an elastic wave device. Background Technology

[0002] For representative mobile communication terminals such as smartphones, it is required to handle communication across multiple high-frequency bands. Therefore, a front-end module equipped with multiple bandpass filters is used, which allow communication in the high-frequency bands to pass through.

[0003] In addition, the front-end module uses elastic wave devices such as bandpass filters, duplexers, and quadplexers.

[0004] Patent document 1 (Japanese Patent Application Publication No. 2019-54354) discloses an example of a technology related to an elastic wave device.

[0005] The main technical problem that this invention aims to solve will be described.

[0006] In elastic wave devices such as bandpass filters or duplexers, the device chip of SAW (Surface Acoustic Wave) filter, etc., is flip-chip bonded to the wiring substrate.

[0007] The resonator that makes up the SAW filter forms a hollow region for mechanical vibration and is sealed by synthetic resin or metal.

[0008] Since the resonator of an elastic wave device generates heat due to mechanical vibration, a package structure with good heat dissipation is desired.

[0009] In addition, in order to prevent moisture from seeping into the sealed hollow area, a high degree of adhesion between the sealing part and the wiring substrate is expected.

[0010] In addition, it is desirable to consider the metal patterns that allow electrical signals of the desired frequency band to pass through, and the absence of coupling between metal patterns that do not allow electrical signals of the desired frequency band to pass through.

[0011] Poor heat dissipation can lead to performance degradation or a decrease in electrical lifespan. Furthermore, if the seal between the sealing element and the wiring substrate is weak, the internal metal is prone to rusting, resulting in performance degradation or a shorter lifespan. Additionally, coupling phenomena can also cause performance degradation. Summary of the Invention

[0012] The present invention was made in view of the aforementioned problems, and aims to provide an elastic wave device with superior characteristics, namely, better heat dissipation, excellent tightness between the sealing part and the wiring substrate, and less coupling between the metal pattern through which the electrical signal of the desired frequency band passes and the metal pattern through which the electrical signal of the desired frequency band does not pass.

[0013] [Methods used to solve technical problems]

[0014] To achieve the aforementioned goal, the present invention provides an elastic wave device having:

[0015] Wiring substrate;

[0016] The device chip is mounted on the wiring substrate;

[0017] Metal pattern, formed on the epitaxial portion of the wiring substrate; and

[0018] The sealing part hermetically seals the device chip; and

[0019] The metal pattern has raised or serrated portions, and the sealing portion is engaged with both the metal pattern and the wiring substrate.

[0020] In one embodiment of the present invention, the elastic wave device has electrode pads formed on the wiring substrate and electrically connected to the device chip;

[0021] In the region of the uneven or serrated portion adjacent to the electrode pad, the area where the sealing portion engages with the wiring substrate is larger than the area where the sealing portion engages with the metal pattern.

[0022] In one embodiment of the present invention, the elastic wave device has electrode pads formed on the wiring substrate and electrically connected to the device chip; and

[0023] The area where the sealing portion engages with the metal pattern in the region of the uneven or serrated portion adjacent to the electrode pad is smaller than the area where the sealing portion engages with the metal pattern in the region of the uneven or serrated portion not adjacent to the electrode pad.

[0024] In one embodiment of the present invention, the elastic wave device has electrode pads formed on the wiring substrate and electrically connected to the device chip; and

[0025] The electrode pads are formed in multiple ways, and at least one of the electrode pads is at ground potential. The electrode pad at ground potential is electrically connected to the metal pattern.

[0026] In one embodiment of the present invention, the elastic wave device has electrode pads formed on the wiring substrate and electrically connected to the device chip; and

[0027] The elastic wave device has a component pattern formed on the wiring substrate and electrically connected to the electrode pad; and the area where the sealing portion engages with the wiring substrate in the region of the concave-convex portion or serrated portion adjacent to the component pattern is greater than the area where the sealing portion engages with the metal pattern.

[0028] In one embodiment of the present invention, the elastic wave device has electrode pads formed on the wiring substrate and electrically connected to the device chip; and

[0029] The elastic wave device has a component pattern formed on the wiring substrate and electrically connected to the electrode pad; and the area where the sealing portion engages with the metal pattern in the region of the concave-convex portion or serrated portion adjacent to the component pattern is smaller than the area where the sealing portion engages with the metal pattern in the region of the concave-convex portion or serrated portion not adjacent to the component pattern.

[0030] In one embodiment of the present invention, the sealing portion comprises a synthetic resin.

[0031] In one embodiment of the present invention, the device chip is a SAW filter.

[0032] In one embodiment of the present invention, the device chip is a filter using a piezoelectric thin film resonator.

[0033] In one embodiment of the present invention, a duplexer with two device chips is mounted on the wiring substrate.

[0034] In one embodiment of the present invention, the outermost epitaxial portion of the wiring substrate is not formed with the metal pattern.

[0035] According to another aspect of the invention, a module comprising the aforementioned elastic wave device is provided.

[0036] The beneficial effects of the present invention are as follows: According to the present invention, an elastic wave device with excellent characteristics can be provided, namely, better heat dissipation, excellent tightness between the sealing part and the wiring substrate, and less coupling between the metal pattern through which the electrical signal of the desired frequency band passes and the metal pattern through which the electrical signal of the desired frequency band does not pass. Attached Figure Description

[0037] Figure 1 This is a cross-sectional view of the elastic wave device of the first embodiment.

[0038] Figure 2 This is a diagram showing an example of the configuration of the main surface of a wiring substrate on which a device chip is mounted.

[0039] Figure 3 This is a diagram showing another configuration example of the main surface of a wiring substrate on which a device chip is mounted.

[0040] Figure 4 This is a diagram used to illustrate the structure of a device chip.

[0041] Figure 5 This is a diagram illustrating the characteristics of the elastic wave device of this embodiment and the comparative example.

[0042] Figure 6 This is a top view showing an example of an elastic surface wave resonator as the elastic wave element.

[0043] Figure 7 This is a cross-sectional view showing an example of an elastic wave element that is a piezoelectric thin film resonator.

[0044] Figure 8 This is a cross-sectional view of a module according to the second embodiment of the present invention.

[0045] Figure 9 This is a schematic diagram showing the circuit configuration of the module. Detailed Implementation

[0046] Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings, thereby clarifying the present invention.

[0047] Figure 1 This is a cross-sectional view of the elastic wave device 1 in this embodiment.

[0048] like Figure 1 As shown, the elastic wave device 1 of this embodiment includes: a wiring substrate 3; and two device chips 5, which are mounted on the wiring substrate 3.

[0049] This embodiment shows an example of an elastic wave device as a duplexer with two device chips 5. Of course, as an application of the present invention, it can also be an elastic wave device as a bandpass filter with one device chip 5, or a quadplexer with four device chips 5. In addition, the functional elements for implementing a duplexer can also be formed on a single device chip.

[0050] The wiring substrate 3 may be, for example, a multilayer substrate containing resin, or a low-temperature co-fired ceramic (LTCC) multilayer substrate containing multiple dielectric layers. Furthermore, the wiring substrate 3 includes multiple external connection terminals 31.

[0051] The device chip 5 may, for example, use a substrate containing piezoelectric single crystals such as lithium tantalate, lithium niobate, or crystal, or piezoelectric ceramics.

[0052] Alternatively, the device chip 5 can also be a substrate formed by bonding a piezoelectric substrate and a support substrate. The support substrate can be, for example, a sapphire substrate, an alumina substrate, a spinel substrate, or a silicon substrate.

[0053] A metal pattern 7 and a plurality of electrode pads 9 are formed on a wiring substrate 3. The metal pattern 7 is formed on the outer epitaxial portion of the wiring substrate 3. The electrode pads 9 are formed on the inner side of the metal pattern 7. The metal pattern 7 and the electrode pads 9 can be made of copper or an alloy containing copper, for example. In addition, the metal pattern 7 and the electrode pads 9 can be set to a thickness of 10 μm to 20 μm, for example.

[0054] A sealing portion 17 is formed to cover the device chip 5. The sealing portion 17 may be formed of an insulator such as a synthetic resin, or a metal, to hermetically seal the device chip 5. Examples of synthetic resins that can be used include epoxy resin and polyimide, but are not limited to these. Epoxy resin is preferred, and a low-temperature curing process is used to form the sealing portion 17.

[0055] The device chip 5 is mounted on the wiring substrate 3 via bumps 15 and flip-chip bonding.

[0056] The bump 15 can be, for example, a gold bump. The height of the bump 15 is, for example, 20 μm to 50 μm.

[0057] The electrode pad 9 is electrically connected to the device chip 5 via the bump 15.

[0058] Figure 2 This is a diagram showing an example of the configuration of the main surface of the wiring substrate 3 on which the device chip 5 is mounted.

[0059] like Figure 2 As shown, a metal pattern 7 is formed on the outer epitaxial portion of the wiring substrate 3. The metal pattern 7 has uneven or serrated portions. In addition, the metal pattern 7 does not necessarily have to be a continuous metal pattern; it can also have discontinuous portions.

[0060] The area AREA17, defined by the solid line representing the outer edge of the wiring substrate 3 and the dashed line describing the inner side of the solid line, represents the area where the sealing portion 17 is joined. AREA17 is the area where the sealing portion 17 is joined to the wiring substrate 3, and also the area where the sealing portion 17 is joined to the metal pattern 7 formed on the wiring substrate 3. In other words, the sealing portion 17 ( Figure 2 (Not shown in the figure) It is bonded to both the wiring substrate 3 and the metal pattern 7.

[0061] The metal pattern 7 improves the thermal conductivity between the wiring substrate 3 and the sealing portion 17, thus improving the heat dissipation of the elastic wave device 1. Furthermore, the boundary between the area where the sealing portion 17 joins the wiring substrate 3 and the area where the sealing portion 17 joins the metal pattern 7 is uneven or serrated, thereby lengthening the boundary line. In the case of unevenness, the sealing portion 17 exists in the recessed portion of the metal pattern 7; in the case of serration, the sealing portion 17 exists in the valley portion of the metal pattern 7. This achieves an anchoring effect, improving the tightness of the connection between the sealing portion 17 and the wiring substrate 3.

[0062] In addition, such as Figure 2 As shown, multiple electrode pads 9 electrically connected to the device chip 5 are formed on the wiring substrate 3. Some of the electrode pads 9 are electrically connected to the metal pattern 7, forming electrode pads GND9 as ground potential. In this way, grounding can be strengthened.

[0063] In some embodiments, a component pattern 91 is formed on the wiring substrate 3. Partial electrode pads 9 are electrically connected to the component pattern 91. The component pattern 91 can be appropriately formed, for example, for the purpose of adding inductive components.

[0064] In addition, such as Figure 2 As shown, the area where the sealing portion 17 in the region ADJ9, indicated by the dotted line, is joined to the wiring substrate 3 is larger than the area where the sealing portion 17 is joined to the metal pattern 7. The region ADJ9 is adjacent to the electrode pad 9 and is the area of ​​the uneven or serrated portion of the metal pattern 7.

[0065] This ensures the distance that is sufficient to suppress coupling between the electrode pad 9 and the metal pattern 7.

[0066] In addition, such as Figure 2 As shown, the area where the sealing portion 17 in region ADJ9 (represented by the dashed line) engages with the metal pattern 7 is smaller than the area where the sealing portion 17 in region NOTADJ9 (represented by the dashed line) engages with the metal pattern 7. Region ADJ9 is adjacent to the electrode pad 9 and forms a concave-convex or serrated portion of the metal pattern 7, while region NOTADJ9 is not adjacent to the electrode pad 9 and forms a concave-convex or serrated portion of the metal pattern 7. Therefore, it is easy to ensure a sufficient distance to adequately suppress coupling between the electrode pad 9 and the metal pattern 7, and to ensure sufficient area of ​​the metal pattern 7 for heat dissipation from the wiring substrate 3.

[0067] In addition, such as Figure 2As shown, in the area ADJ91 indicated by the dotted line, the area where the sealing part 17 is joined to the wiring substrate 3 is larger than the area where the sealing part 17 is joined to the metal pattern 7. The area ADJ91 is adjacent to the element pattern 91 and is the area of ​​the concave-convex or serrated portion of the metal pattern 7.

[0068] This ensures the distance that is sufficient to suppress coupling between the element pattern 91 and the metal pattern 7.

[0069] In addition, such as Figure 2 As shown, the area where the sealing part 17 in the region ADJ91, represented by the dotted line, joins with the metal pattern 7 is smaller than the area where the sealing part 17 in the region NOTADJ91, represented by the dotted line, joins with the metal pattern 7. The region ADJ91 is adjacent to the element pattern 91 and serves as a concave-convex or serrated portion of the metal pattern 7. The region NOTADJ91 is not adjacent to the element pattern 91 and serves as a concave-convex or serrated portion of the metal pattern 7.

[0070] Therefore, it is easy to ensure the distance for sufficiently suppressing coupling between the component pattern 91 and the metal pattern 7, and to ensure the area of ​​the metal pattern 7 for heat dissipation of the wiring substrate 3.

[0071] Figure 3 This is a diagram showing another configuration example of the main surface on which the device chip 5 is mounted in the wiring substrate 3.

[0072] like Figure 3 As shown, the outermost portion 10 of the wiring substrate 3 does not have a metal pattern 7 formed. This structure further improves the adhesion between the sealing portion 17 and the wiring substrate 3. Furthermore, the metal pattern 7 does not necessarily need to be a continuous metal pattern; it can also be formed with intermittent portions. Other configurations are similar to... Figure 2 The content described herein is the same.

[0073] Figure 4 This is a diagram used to illustrate the configuration of device chip 5.

[0074] like Figure 4 As shown, an elastic wave element 52 and a wiring pattern 54 are formed on the device chip 5.

[0075] An insulator 56 is formed on the wiring pattern 54. The insulator 56 can be, for example, made of polyimide. The insulator 56 is formed, for example, with a film thickness of 1000 nm.

[0076] Wiring pattern 54 is also formed on insulator 56, and wiring is formed in a three-dimensional intersecting manner through insulator 56.

[0077] The elastic wave element 52 and the wiring pattern 54 comprise suitable metals such as silver, aluminum, copper, titanium, palladium, or their alloys. Alternatively, these metal patterns can be formed from stacked metal films consisting of multiple metal layers. The thickness of the elastic wave element 52 and the wiring pattern 54 can be, for example, set from 150 nm to 400 nm.

[0078] Wiring pattern 54 includes wiring that forms the input pad In, output pad Out, and ground pad GND. Additionally, wiring pattern 54 is electrically connected to the elastic wave element 52.

[0079] like Figure 4 As shown, by forming multiple elastic wave elements 52, a bandpass filter can be constructed, for example. The bandpass filter is designed to allow only electrical signals of the desired frequency band to pass through the electrical signals input from the input pad In.

[0080] The electrical signal input from the input pad In passes through a bandpass filter, and the electrical signal of the required frequency band is output to the output pad Out.

[0081] The electrical signal output to the output pad Out is output from the external connection terminal 31 of the wiring board 3 via the bump 15 and the electrode pad 9.

[0082] Figure 5 This is a diagram illustrating the characteristics of the elastic wave device 1 in this embodiment and the comparative example.

[0083] In the comparative example, the metal pattern formed on the wiring substrate does not have raised or serrated portions; otherwise, it is the same as the elastic wave device 1 of this embodiment.

[0084] The solid lines represent the characteristics of the elastic wave device 1 in this embodiment, while the dashed lines represent the characteristics of the comparative example.

[0085] like Figure 5 As shown, the elastic wave device 1 of this embodiment exhibits reduced coupling and improved isolation characteristics compared to the comparative example. A significant improvement in characteristics was observed, particularly in the 1.9 GHz to 2.0 GHz frequency band.

[0086] Figure 6 This is a top view showing an example of an elastic surface wave resonator for the elastic wave element 52.

[0087] like Figure 6 As shown, an IDT (Interdigital Transducer) 52a and a reflector 52b for excitating elastic surface waves are formed on the device chip 5. The IDT 52a has a pair of comb-shaped electrodes 52c facing each other.

[0088] Each comb electrode 52c has multiple electrode fingers 52d and a busbar 52e connecting the multiple electrode fingers 52d. Reflectors 52b are disposed on both sides of IDT 52a.

[0089] IDT 52a and reflector 52b, for example, comprise an alloy of aluminum and copper. IDT 52a and reflector 52b are thin films with a thickness of, for example, 150 nm to 400 nm.

[0090] The IDT 52a and reflector 52b may also contain other metals, such as titanium, palladium, silver, or alloys thereof, and may also be formed from these alloys. Alternatively, the IDT 52a and reflector 52b may also be formed from a laminated metal film consisting of multiple metal layers.

[0091] Figure 7 This is a cross-sectional view showing an example of an elastic wave element 52 being a piezoelectric thin film resonator.

[0092] like Figure 7 As shown, a piezoelectric film 62 is provided on the chip substrate 60. A lower electrode 64 and an upper electrode 66 are provided in a manner that sandwiches the piezoelectric film 62. A gap 68 is formed between the lower electrode 64 and the chip substrate 60. The lower electrode 64 and the upper electrode 66 excite elastic waves in a thickness longitudinal vibration mode within the piezoelectric film 62.

[0093] The chip substrate 60 can be, for example, a semiconductor substrate such as silicon, or an insulating substrate such as sapphire, alumina, spinel, or glass. The piezoelectric film 62 can be, for example, aluminum nitride.

[0094] The lower electrode 64 and the upper electrode 66 can be made of metals such as ruthenium.

[0095] The elastic wave element 52 is appropriately used in multimode filters or trapezoidal filters to obtain the desired characteristics of a bandpass filter.

[0096] According to one embodiment of the present invention described above, an elastic wave device with excellent characteristics can be provided, namely, better heat dissipation, excellent tightness between the sealing part and the wiring substrate, and less coupling between the metal pattern through which the electrical signal of the desired frequency band passes and the metal pattern through which the electrical signal of the desired frequency band does not pass.

[0097] (Second Embodiment)

[0098] Next, a second embodiment, which is another implementation of the present invention, will be described.

[0099] Figure 8 This is a cross-sectional view of module 100 according to the second embodiment of the present invention.

[0100] like Figure 8As shown, an elastic wave device 1 is mounted on the main surface of the wiring substrate 130. The elastic wave device 1 may be configured as a dual filter including a first bandpass filter BPF1 and a second bandpass filter BPF2, but it is not shown.

[0101] The wiring board 130 has a plurality of external connection terminals 131. The plurality of external connection terminals 131 constitute a motherboard for mounting on a specified mobile communication terminal.

[0102] On the main surface of the wiring substrate 130, a first inductor 111 and a second inductor 112 are mounted for impedance matching. Module 100 is used to seal the sealing portion 117 containing multiple electronic components of the elastic wave device 1. Integrated circuit components IC are mounted inside the wiring substrate 130. The integrated circuit components IC include a switching circuit SW, a first low-noise amplifier LNA1, and a second low-noise amplifier LNA2, but are not shown.

[0103] Figure 9 This is a schematic diagram showing the circuit configuration of module 100.

[0104] like Figure 9 As shown, the common input terminal 101 (external connection terminal 131) of module 100 is connected to the antenna terminal ANT. The first output terminal 103 and the second output terminal 105 (external connection terminal 131) are connected to the signal processing circuit, but are not shown.

[0105] The signal from the common input terminal 101 is split into a signal passing through the first bandpass filter BPF1 and a signal passing through the second bandpass filter BPF2 by the switching circuit SW.

[0106] The signal after passing through the first bandpass filter BPF1 is impedance matched by the first inductor 111, amplified by the first low-noise amplifier LNA1, and then output from the first output terminal 103. Alternatively, if the first bandpass filter BPF1 is a transmit filter, the first output terminal 103 functions as an input terminal, and the signal amplified by the first low-noise amplifier LNA1 and impedance matched by the first inductor 111 is transmitted from the antenna terminal ANT through the first bandpass filter BPF1.

[0107] The signal after passing through the second bandpass filter BPF2 is impedance matched by the second inductor 112, amplified by the second low-noise amplifier LNA2, and then output from the second output terminal 105. Alternatively, if the second bandpass filter BPF2 is a transmit filter, the second output terminal 105 functions as an input terminal, and the signal amplified by the second low-noise amplifier LNA2 and impedance matched by the second inductor 112 is transmitted from the antenna terminal ANT through the second bandpass filter BPF2.

[0108] Since other components are repeated from those described in the first embodiment, they are omitted.

[0109] Based on the embodiments of the present invention described above, a module can be provided that has excellent characteristics of an elastic wave device, namely, better heat dissipation, excellent tightness between the sealing part and the wiring substrate, and the metal pattern through which the electrical signal of the desired frequency band passes is not easily coupled to the metal pattern through which the electrical signal of the desired frequency band does not pass.

[0110] Furthermore, the present invention is not limited to the embodiments described above, but includes all embodiments that can achieve the purpose of the present invention.

[0111] Furthermore, while at least one embodiment has been described above, it should be understood that those skilled in the art will readily conceive of various changes, modifications, or improvements.

[0112] The aforementioned changes, modifications, or improvements are also part of this disclosure and fall within the scope of this invention. It should be understood that the embodiments of the methods or apparatus described herein are not limited to the architecture and arrangement of the constituent components described above or illustrated in the drawings. The methods and apparatus can be installed or performed in other embodiments. The embodiments described are for illustrative purposes only and are not intended to be limiting. Furthermore, the descriptions or terms used herein are for illustrative purposes only and should not be considered restrictive. The use of "comprising," "possessing," "having," "including," and variations thereof herein means to include the items listed below, their equivalents, and additional items. The term "or," or any term used in the description of "or," can be interpreted as meaning one, more than one, or all of the descriptive terms. References to front, back, left, right, top, bottom, upper, lower, and horizontal and vertical are for convenience of description and do not limit the position and spatial configuration of any constituent component in this invention. Therefore, the above description and drawings are merely exemplary.

Claims

1. An elastic wave device, characterized in that: The elastic wave device is a SAW filter, which includes: Wiring substrate; The device chip is mounted on the wiring substrate; Metal pattern, formed on the epitaxial portion of the wiring substrate; and A sealing portion hermetically seals the device chip, and a hollow area is formed between the sealing portion and the wiring substrate; and The metal pattern has raised or serrated portions, and the sealing portion is engaged with both the metal pattern and the wiring substrate.

2. The elastic wave device according to claim 1, characterized in that: The elastic wave device has electrode pads formed on the wiring substrate and electrically connected to the device chip; in the region of the concave-convex or serrated portion adjacent to the electrode pads, the area of ​​the sealing portion that engages with the wiring substrate is larger than the area of ​​the sealing portion that engages with the metal pattern.

3. The elastic wave device according to claim 1, characterized in that: The elastic wave device has an electrode pad formed on the wiring substrate and electrically connected to the device chip; the area where the sealing portion engages with the metal pattern in the region of the uneven or serrated portion adjacent to the electrode pad is smaller than the area where the sealing portion engages with the metal pattern in the region of the uneven or serrated portion not adjacent to the electrode pad.

4. The elastic wave device according to claim 1, characterized in that: The elastic wave device has electrode pads formed on the wiring substrate and electrically connected to the device chip; multiple electrode pads are formed, at least one of which is at ground potential, and the ground potential electrode pad is electrically connected to the metal pattern.

5. The elastic wave device according to claim 1, characterized in that: The elastic wave device has electrode pads formed on the wiring substrate and electrically connected to the device chip; and the elastic wave device has a component pattern formed on the wiring substrate and electrically connected to the electrode pads; the area where the sealing portion is joined to the wiring substrate in the region of the concave-convex portion or serrated portion adjacent to the component pattern is larger than the area where the sealing portion is joined to the metal pattern.

6. The elastic wave device according to claim 1, characterized in that: The elastic wave device has electrode pads formed on the wiring substrate and electrically connected to the device chip; and the elastic wave device has a component pattern formed on the wiring substrate and electrically connected to the electrode pads; the area where the sealing portion engages with the metal pattern in the region of the concave-convex or serrated portion adjacent to the component pattern is smaller than the area where the sealing portion engages with the metal pattern in the region of the concave-convex or serrated portion not adjacent to the component pattern.

7. The elastic wave device according to claim 1, characterized in that: The sealing part contains synthetic resin.

8. The elastic wave device according to claim 1, characterized in that: The device chip is a filter that uses a piezoelectric thin film resonator.

9. The elastic wave device according to claim 1, characterized in that: The elastic wave device is a duplexer with two device chips mounted on the wiring substrate.

10. The elastic wave device according to claim 1, characterized in that: The outermost portion of the wiring substrate does not have the metal pattern formed thereon.

11. A module, characterized in that: The module includes an elastic wave device according to any one of claims 1 to 10.

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