Optical tweezers device and manufacturing method thereof

Abstract

An optical tweezers device and a manufacturing method thereof, the optical tweezers device comprising a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located on the transparent substrate and comprises a first doped region, a second doped region and a transition region, wherein the transition region is located between the first doped region and the second doped region. The first electrode is located on the first doped region and is electrically connected to the first doped region. The dielectric layer is located on the semiconductor layer and has a first through hole overlapping the first electrode.

Description

Technical Field

[0001] The invention relates to an optical tweezers device. Background Art

[0002] Optical tweezers (OET) are a tool for manipulating tiny particles (such as semiconductor particles, metal particles, metal nanowires, biological cells or other particles). Generally speaking, the operation of optical tweezers can be performed by a highly focused laser beam. Nano- or micron-sized dielectric particles can be manipulated by the force generated by the laser beam. Optical tweezers operate in a non-mechanical contact manner, and the damage to the particles to be clamped by the optical tweezers can be reduced by selecting a laser with an appropriate wavelength. Therefore, many biotechnology studies use optical tweezers to manipulate single cells. Summary of the invention

[0003] The present invention provides an optical tweezers device, which can save the cost required for the process.

[0004] The invention provides a method for manufacturing an optical tweezers device, which can save the production cost of the optical tweezers device.

[0005] At least one embodiment of the present invention provides an optical tweezers device, comprising a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located on the transparent substrate and comprises a first doped region, a second doped region and a transition region, wherein the transition region is located between the first doped region and the second doped region. The first electrode is located on the first doped region and is electrically connected to the first doped region. The dielectric layer is located on the semiconductor layer and has a first through hole overlapping the first electrode.

[0006] At least one embodiment of the present invention provides a method for manufacturing an optical tweezers device, comprising: forming a semiconductor material layer on a transparent substrate; performing multiple doping processes on the semiconductor material layer to form a semiconductor layer including a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region; forming a first electrode on the first doping region; and forming a dielectric layer on the semiconductor layer, wherein the dielectric layer has a first through hole overlapping the first electrode.

[0007] Based on the above, since the semiconductor layer is located on the transparent substrate, the semiconductor layer can be formed by a thin film process, thereby reducing the production cost of the optical tweezers device. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1A is a cross-sectional schematic diagram of an optical tweezers device according to an embodiment of the present invention.

[0009] Figure 1B yes Figure 1A Top view of the optical tweezers setup.

[0010] Figure 2 is a cross-sectional schematic diagram of an optical tweezers device according to an embodiment of the present invention.

[0011] FIG. 3A to FIG. 9A , Fig.10 , Fig.11 as well as Fig.12 is a cross-sectional schematic diagram of a method for manufacturing an optical tweezers device according to an embodiment of the present invention.

[0012] FIG. 3B to FIG. 9B yes FIG. 3A to FIG. 9A Top view of the structure.

[0013] Fig.13A is a cross-sectional schematic diagram of an optical tweezers device according to an embodiment of the present invention.

[0014] Fig. 13B yes Fig.13A Top view of the optical tweezers setup.

[0015] Fig.14A is a cross-sectional schematic diagram of an optical tweezers device according to an embodiment of the present invention.

[0016] Fig. 14B yes Fig.14A Top view of the optical tweezers setup.

[0017] Fig.15A is a cross-sectional schematic diagram of an optical tweezers device according to an embodiment of the present invention.

[0018] Fig. 15B yes Fig.15A Top view of the optical tweezers setup.

[0019] Description of reference numerals:

[0020] 10,20,30,40: Optical tweezers

[0021] 100: Transparent base

[0022] 110, 110A, 110B, 110C: semiconductor layer

[0023] 110a: semiconductor material layer

[0024] 112, 112a, 112A, 112B, 112C: first doping region

[0025] 114,114B,114C: Transition zone

[0026] 116, 116A, 116B, 116C: second doping region

[0027] 120: Insulation layer

[0028] 120a: Insulation material layer

[0029] 130: Dielectric layer

[0030] 132: First through hole

[0031] 140: Protective rubber layer

[0032] 200: Buffer solution

[0033] 300: Particles / Induced Polarization Particles

[0034] 400: Counter electrode

[0035] 510: Reflective layer

[0036] 520: Protective layer

[0037] a-a': line

[0038] D1: First direction

[0039] D2: Second direction

[0040] E1: First electrode

[0041] E2: Second electrode

[0042] LF: Flow direction

[0043] LS: Beam

[0044] O1, O2: Open

[0045] PR1: First mask pattern

[0046] PR2: Second mask pattern

[0047] PR3: Third mask pattern

[0048] R1: Zone 1

[0049] R2: Second Zone

[0050] R3: The third zone

[0051] W1, W2, W3: Width DETAILED DESCRIPTION

[0052] Figure 1A is a cross-sectional schematic diagram of an optical tweezers device according to an embodiment of the present invention. Figure 1B yes Figure 1A A top view of the optical tweezers apparatus, wherein Figure 1A Corresponding Figure 1B The position of the line a-a'. Figure 1BThe first electrode E1, the second electrode E2, the transition region 114 of the semiconductor layer 110, and the first through hole 132 of the dielectric layer 130 are shown, and other components are omitted.

[0053] Please refer to Figure 1A and Figure 1B , the optical tweezers device 10 includes a transparent substrate 100, a semiconductor layer 110, a first electrode E1 and a dielectric layer 130. In this embodiment, the optical tweezers device 10 also includes a second electrode E2, an insulating layer 120, a buffer solution 200, a plurality of particles 300, a counter electrode 400, a reflective layer 510 and a protective layer 520. In some embodiments, the optical tweezers device 10 is a self-locking optical tweezer (SLOT) device.

[0054] The material of the transparent substrate 100 includes, for example, glass, quartz, organic polymer or other applicable materials. Compared with using a silicon wafer as a substrate, selecting the transparent substrate 100 can save the production cost of the optical tweezers device 10 .

[0055] The semiconductor layer 110 is located on the transparent substrate 100. In some embodiments, the material of the semiconductor layer 110 includes, for example, polysilicon, amorphous silicon, single crystal silicon or other suitable materials. The semiconductor layer 110 includes a first doping region 112, a second doping region 116 and a transition region 114, wherein the transition region 114 is located between the first doping region 112 and the second doping region 116.

[0056] The first doped regions 112 are separated from each other. In some embodiments, the first doped regions 112 are arrayed on the transparent substrate 100. For example, the vertical projection of the first doped regions 112 on the transparent substrate 100 is a circle, an ellipse, a triangle, a rectangle, a pentagon, a hexagon or other geometric shapes, and a plurality of first doped regions 112 are arrayed on the transparent substrate 100 along the first direction D1 and the second direction D2. Figure 1A Two first doping regions 112 are shown in the optical tweezers device 10, but the number of the first doping regions 112 can be adjusted according to actual needs. In some embodiments, the width W1 of the first doping region 112 is 2 micrometers to 100 micrometers.

[0057] The transition regions 114 are separated from each other, and each transition region 114 surrounds a corresponding first doping region 112. In some embodiments, the transition region 114 and the first doping region 112 are in the shape of concentric circles, but the present invention is not limited thereto. In other embodiments, the first doping region 112 may include a shape other than a circle, and the shape of the transition region 114 varies with the shape of the first doping region 112. In some embodiments, the width W2 of the transition region 114 is 2 microns to 20 microns.

[0058] The second doping region 116 surrounds the plurality of transition regions 114 . In the present embodiment, the second doping region 116 is a continuous structure, and the transition regions 114 and the first doping regions 112 are distributed in the second doping region 116 .

[0059] In some embodiments, one of the first doping region 112 and the second doping region 116 is a P-type semiconductor, the other of the first doping region 112 and the second doping region 116 is an N-type semiconductor, and the transition region 114 is an intrinsic semiconductor or a lightly doped semiconductor with a purity close to that of an intrinsic semiconductor. Therefore, the semiconductor layer 110 includes a plurality of PIN diodes formed by the first doping region 112, the transition region 114, and the second doping region 116.

[0060] The insulating layer 120 is located on the semiconductor layer 110. The insulating layer 120 has a plurality of openings O1 and O2 overlapping the semiconductor layer 110. The opening O1 overlaps the first doping region 112, and the opening O2 overlaps the second doping region 116. In some embodiments, the sidewall of the opening O1 is substantially aligned with the boundary of the first doping region 112, but the present invention is not limited thereto. In other embodiments, the sidewall of the opening O1 deviates from the boundary of the first doping region 112. The material of the insulating layer 120 includes, for example, silicon oxide, silicon nitride, silicon oxynitride, or other suitable materials.

[0061] In some embodiments, the first electrodes E1 are arrayed on the semiconductor layer 110 along the first direction D1 and the second direction D2, but the present invention is not limited thereto. In other embodiments, the first electrodes E1 are arrayed on the semiconductor layer 110 in other arrangements. The first electrode E1 is located on the first doping region 112 and is electrically connected to the first doping region 112. In the present embodiment, the first electrode E1 is directly formed on the first doping region 112. In the present embodiment, the first electrode E1 is an island structure, and each first electrode E1 overlaps a corresponding first doping region 112. In some embodiments, the sidewall of the first electrode E1 is substantially aligned with the boundary of the first doping region 112, but the present invention is not limited thereto. In other embodiments, the sidewall of the first electrode E1 deviates from the boundary of the first doping region 112.

[0062] The second electrode E2 is located on the second doping region 116 and is electrically connected to the second doping region 116. In the present embodiment, the second electrode E2 is directly formed on the second doping region 116. In the present embodiment, the second electrode E2 is a continuous structure, and the second electrode E2 surrounds the island-shaped first electrode E1. In some embodiments, the sidewall of the second electrode E2 is substantially aligned with the boundary of the second doping region 116, but the present invention is not limited thereto. In other embodiments, the sidewall of the second electrode E2 deviates from the boundary of the second doping region 116.

[0063] The first electrode E1 may be a single layer or a multilayer structure. The material of the first electrode E1 includes metal, metal oxide, metal nitride or other suitable materials. The second electrode E2 may be a single layer or a multilayer structure. The material of the second electrode E2 includes metal, metal oxide, metal nitride or other suitable materials. In some embodiments, the first electrode E1 and the second electrode E2 belong to the same conductive layer. In other words, the first electrode E1 and the second electrode E2 are formed by patterning the same conductive material layer. In some embodiments, the first electrode E1 and the second electrode E2 include the same thickness and material.

[0064] The dielectric layer 130 is located on the semiconductor layer 110. In the present embodiment, the dielectric layer 130 is formed on the first electrode E1, the second electrode E2 and the insulating layer 120, and a portion of the first electrode E1, the second electrode E2 and the insulating layer 120 is located between the dielectric layer 130 and the semiconductor layer 110. The dielectric layer 130 covers the top surface of the second electrode E2. The dielectric layer 130 has a first through hole 132 overlapping the first electrode E1. In some embodiments, the material of the dielectric layer 130 includes silicon oxide, silicon nitride, silicon oxynitride, organic material or other suitable materials.

[0065] The first through hole 132 exposes at least a portion of the top surface of the first electrode E1. In this embodiment, the dielectric layer 130 has a plurality of first through holes 132 in an array, and each first through hole 132 overlaps a corresponding first electrode E1. In some embodiments, the width W3 of the first through hole 132 is 2 micrometers to 100 micrometers.

[0066] The reflective layer 510 is located on the side of the transparent substrate 100 facing away from the semiconductor layer 110. The transparent substrate 100 is located between the reflective layer 510 and the semiconductor layer 110. In some embodiments, the reflective layer 510 includes metal or other reflective materials. The protective layer 520 covers the reflective layer 510.

[0067] The counter electrode 400 overlaps the plurality of first electrodes E1. In some embodiments, the counter electrode 400 includes a light-transmitting material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, organic conductive material or other suitable material or stacked layers of the above materials.

[0068] The buffer solution 200 is located between the counter electrode 400 and the first electrode E1. The buffer solution 200 is located between the counter electrode 400 and the dielectric layer 130. In some embodiments, the buffer solution 200 fills the first through hole 132 of the dielectric layer 130, and the buffer solution 200 contacts the counter electrode 400, the first electrode E1 and the dielectric layer 130. In some embodiments, the buffer solution 200 is, for example, a physiological buffer solution or other buffer solution (e.g., an isotonic buffer solution). A plurality of particles 300 are located in the buffer solution 200. The particles 300 may be biological particles, organic particles or inorganic particles. The particle size of the particles 300 is 2 microns to 100 microns.

[0069] In some embodiments, an alternating current is applied to the counter electrode 400 and the first electrode E1 at a certain frequency to generate an electric field between the counter electrode 400 and the first electrode E1. The polarizable particles 300 are attracted to the first through hole 132 of the dielectric layer 130 overlapping the first electrode E1 due to the dielectrophoretic force.

[0070] Please refer to Figure 2 , select the required induced polarization particles 300, and irradiate the position of the selected induced polarization particles 300 (or the position of the semiconductor layer 110 below the selected induced polarization particles 300) with the light beam LS. In some embodiments, the diameter of the light beam LS is greater than the width of the first electrode E1, and in addition to irradiating the induced polarization particles 300, the light beam LS also irradiates the PIN diode below the selected first electrode E1. The diameter of LS is 2 micrometers to 120 micrometers. For example, the light beam LS irradiates the transition region 114, so that the PIN diode below the selected induced polarization particles 300 generates a photocurrent, and reverses the direction of the dielectrophoretic force of the selected induced polarization particles 300, so that the selected induced polarization particles 300 are repelled and leave the first through hole 132 of the dielectric layer 130. In some embodiments, the buffer solution 200 flows along the flow direction LF, so that the induced polarization particles 300 leaving the first through hole 132 flow downstream along the buffer solution 200. In some embodiments, the polarization induced particles 300 flowing downstream are collected and analyzed, but the present invention is not limited thereto. In other embodiments, the polarization induced particles 300 remaining on the first through hole 132 are collected and analyzed.

[0071] In some embodiments, the light beam LS includes laser light, ultraviolet light, visible light, or other suitable light.

[0072] In some embodiments, since the optical tweezers device 10 includes a reflective layer 510, the light beam LS passing through the transparent substrate 100 can be reflected by the reflective layer 510 and return to the semiconductor layer 110, so the semiconductor layer 110 can generate a large photocurrent. In some embodiments, the ratio of the photocurrent generated by the semiconductor layer 110 to the dark current is greater than or equal to two orders of magnitude.

[0073] The doping form of the semiconductor layer 110 affects the direction of the current generated by the PIN diode after being illuminated. In this embodiment, the first doped region 112 is an N-type semiconductor, the second doped region 116 is a P-type semiconductor, and the surface of the induced polarization particle 300 is negatively charged. In other embodiments, the first doped region 112 is a P-type semiconductor, the second doped region 116 is an N-type semiconductor, and the surface of the induced polarization particle 300 is positively charged.

[0074] FIG. 3A to FIG. 9A , Fig.10 , Fig.11 as well as Fig.12 is a cross-sectional schematic diagram of a method for manufacturing an optical tweezers device according to an embodiment of the present invention. FIG. 3B to FIG. 9B yes FIG. 3A to FIG. 9A It must be noted that FIG. 3A to FIG. 9A , FIG. 3B to FIG. 9B , Fig.10 , Fig.11 as well as Fig.12 The implementation examples are used Figure 1A , Figure 1B and Figure 2 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0075] Please refer to Figure 3A and Figure 3B , forming a semiconductor material layer 110a on the transparent substrate 100. In this embodiment, since the semiconductor material layer 110a is located on the transparent substrate 100, the semiconductor material layer 110a can be formed by a thin film process, thereby reducing the production cost of the optical tweezers device. In some embodiments, the method of forming the semiconductor material layer 110a includes, for example, a low temperature polysilicon (Low Temperature Poly-Silicon) process or other suitable processes. In addition, compared to making an optical tweezers device on a wafer, a large-area optical tweezers device can be obtained more easily by using a thin film process.

[0076] Please refer to FIG. 4A to FIG. 5A as well as FIG. 4B to FIG. 5B, multiple doping processes are performed on the semiconductor material layer 110 a to form a semiconductor layer 110 including a first doping region 112 , a second doping region 116 and a transition region 114 , wherein the transition region 114 is located between the first doping region 112 and the second doping region 116 .

[0077] Please refer to Figure 4A and Figure 4B , a first mask pattern PR1 is formed on the first region R1 of the semiconductor material layer 110a, and the first mask pattern PR1 exposes the second region R2 and the third region R3 of the semiconductor material layer 110a, wherein the first region R1 surrounds the third region R3, and the first region R1 is located between the second region R2 and the third region R3. In some embodiments, the first mask pattern PR1 is, for example, a patterned photoresist.

[0078] Using the first mask pattern PR1 as a mask, a first doping process is performed on the second region R2 and the third region R3 of the semiconductor material layer 110a to form the semiconductor material layer 110a. The first doping process is, for example, P-type doping or N-type doping. In the present embodiment, the first doping process is a P-type doping process. In the present embodiment, the first doping process forms a second doping region 116 and a first doping region 112a having the same doping type in the second region R2 and the third region R3.

[0079] After performing the first doping process, the first mask pattern PR1 is removed. In some embodiments, the first mask pattern PR1 is removed by etching (eg, ashing).

[0080] Please refer to Figure 5A and Figure 5B , a second mask pattern PR2 is formed on the first region R1 and the second region R2 of the semiconductor material layer 100b, and the second mask pattern PR2 exposes the third region R3 of the semiconductor material layer 100b. In some embodiments, the second mask pattern PR2 is, for example, a patterned photoresist.

[0081] The second mask pattern PR2 is used as a mask to perform a second doping process on the third region R3 of the semiconductor material layer 110a. The second doping process is, for example, P-type doping or N-type doping. In the present embodiment, the second doping process is different from the first doping process, and the second doping process is an N-type doping process. In the present embodiment, the second doping process forms a first doped region 112 in the third region R3.

[0082] At this point, the semiconductor layer 110 including the first doping region 112, the second doping region 116 and the transition region 114 is substantially completed, wherein the third region R3 of the semiconductor material layer 110a corresponds to the position of the first doping region 112, the second region R2 of the semiconductor material layer 110a corresponds to the position of the second doping region 116, and the first region R1 of the semiconductor material layer 110a corresponds to the position of the transition region 114.

[0083] After performing the second doping process, the second mask pattern PR2 is removed. In some embodiments, the second mask pattern PR2 is removed by etching (eg, ashing).

[0084] Please refer to Fig. 6A and Figure 6B , an insulating material layer 120a is formed on the semiconductor layer 110. In some embodiments, the insulating material layer 120a includes silicon oxide, silicon nitride, silicon oxynitride or other suitable materials.

[0085] In some embodiments, the insulating material layer 120a includes hydrogen elements, and an annealing process is performed on the semiconductor layer 110 and the insulating material layer 120a to diffuse the hydrogen elements in the insulating material layer 120a into the semiconductor layer 110, thereby repairing the damage caused by the doping process to the semiconductor layer 110. In some embodiments, the annealing process is to heat the semiconductor layer 110 and the insulating material layer 120a to 400 degrees Celsius to 625 degrees Celsius using a rapid thermal annealing process.

[0086] Please refer to Fig. 7A and Figure 7B , the insulating material layer 120a is patterned to form an insulating layer 120 exposing the first doped region 112 and the second doped region 116. In the present embodiment, a third mask pattern PR3 is formed on the insulating material layer 120a, and the insulating material layer 120a is etched using the third mask pattern PR3 as a mask to form an insulating layer 120 including openings O1 and O2, wherein the opening O1 of the insulating layer 120 exposes the first doped region 112, and the opening O2 of the insulating layer 120 exposes the second doped region 116. In some embodiments, the third mask pattern PR3 is, for example, a patterned photoresist.

[0087] In some embodiments, after the insulating material layer 120a is patterned, the third mask pattern PR3 is removed. In some embodiments, the third mask pattern PR3 is removed by etching (eg, ashing).

[0088] Please refer to Fig. 8A and Figure 8B, forming a first electrode E1 on the first doping region 112, and forming a second electrode E2 on the second doping region 116. In some embodiments, the first electrode E1 and the second electrode E2 belong to the same conductive film layer. For example, the method of forming the first electrode E1 and the second electrode E2 includes: forming a conductive material layer on the insulating layer 120, and filling the conductive material layer into the openings O1 and O2 of the insulating layer 120, and then patterning the conductive material layer to form the first electrode E1 and the second electrode E2 separated from each other.

[0089] Please refer to Fig.9A and Fig. 9B , a dielectric layer 130 is formed on the semiconductor layer 110. In this embodiment, the dielectric layer 130 is formed on a portion of the first electrode E1, the second electrode E2 and the insulating layer 120. The dielectric layer 130 has a first through hole 132 overlapping the first electrode E1, and the dielectric layer 130 covers the top surface of the second electrode E2.

[0090] Please refer to Fig.10 , forming a protective adhesive layer 140 on the dielectric layer 130. In some embodiments, the protective adhesive layer 140 is filled into the first through hole 132 of the dielectric layer 130. In some embodiments, the protective adhesive layer 140 includes a peelable adhesive.

[0091] Please refer to Fig.11 , a reflective layer 510 is formed on the side of the transparent substrate 100 facing away from the semiconductor layer 110. Next, a protective layer 520 is formed on the reflective layer 510. The reflective layer 510 is, for example, formed entirely on the transparent substrate 100, but the present invention is not limited thereto. In some embodiments, the reflective layer 510 is a patterned film layer.

[0092] Please refer to Fig.12 , remove the protective glue layer 140. After removing the protective glue layer 140, provide a counter electrode 400 overlapping the first electrode E1; provide a buffer solution 200 between the counter electrode 400 and the first electrode E1 and between the counter electrode 400 and the dielectric layer 130; and provide a plurality of particles 300 in the buffer solution 200, such as Figure 1B At this point, the optical tweezers device 10 is substantially completed.

[0093] Fig.13A is a cross-sectional schematic diagram of an optical tweezers device according to an embodiment of the present invention. Fig. 13B yes Fig.13A A top view of the optical tweezers device. It must be noted here that Fig.13A as well as Fig. 13B The implementation examples are used Figure 1A , Figure 1B and Figure 2The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0094] Fig.13A and Fig. 13B The optical tweezers device 20 and Figure 1A and Figure 1B The difference between the optical tweezers device 10 and the optical tweezers device 20 is that the positions of the N-type semiconductor and the P-type semiconductor in the semiconductor layer 110 of the optical tweezers device 10 are different from the positions of the N-type semiconductor and the P-type semiconductor in the semiconductor layer 110A of the optical tweezers device 20. The first doped region 112 and the second doped region 116 in the semiconductor layer 110 of the optical tweezers device 10 are respectively an N-type semiconductor and a P-type semiconductor, while the first doped region 112A and the second doped region 116A in the semiconductor layer 110A of the optical tweezers device 20 are respectively a P-type semiconductor and an N-type semiconductor.

[0095] exist Fig.13A and Fig. 13B In the embodiment of FIG. 1 , the first electrode E1 is electrically connected to the P-type semiconductor, and the second electrode E2 is electrically connected to the N-type semiconductor. In this embodiment, the surface of the polarization induced particle 300 is positively charged.

[0096] Fig.14A is a cross-sectional schematic diagram of an optical tweezers device according to an embodiment of the present invention. Fig. 14B yes Fig.14A A top view of the optical tweezers device. It must be noted here that Fig.14A as well as Fig. 14B The implementation examples are used Figure 1A , Figure 1B and Figure 2 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0097] Fig.14A and Fig. 14B The optical tweezers device 30 and Figure 1A and Figure 1B The difference between the optical tweezers device 10 and the optical tweezers device 20 is that the semiconductor layer 110 of the optical tweezers device 10 includes a PIN diode, while the semiconductor layer 110B of the optical tweezers device 20 includes a PN diode.

[0098] exist Fig.14A and Fig. 14B In the embodiment of FIG. 1 , the first doped region 112B and the second doped region 116B in the semiconductor layer 110B are N-type semiconductors, and the transition region 114B is a P-type semiconductor. Fig.14A and Fig. 14B In the embodiment of FIG. 5 , the first electrode E1 and the second electrode E2 are both electrically connected to the N-type semiconductor.

[0099] In this embodiment, when the light beam irradiates the PN diode, the PN diode generates a photocurrent, thereby attracting or repelling the particles 300 .

[0100] Fig.15A is a cross-sectional schematic diagram of an optical tweezers device according to an embodiment of the present invention. Fig. 15B yes Fig.15A A top view of the optical tweezers device. It must be noted here that Fig.15A as well as Fig. 15B The implementation examples are used Figure 1A , Figure 1B and Figure 2 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0101] Fig.15A and Fig. 15B The optical tweezers device 40 and Figure 1A and Figure 1B The difference between the optical tweezers device 10 and the optical tweezers device 40 is that the semiconductor layer 110 of the optical tweezers device 10 includes a PIN diode, while the semiconductor layer 110C of the optical tweezers device 40 includes a PN diode.

[0102] exist Fig.15A and Fig. 15B In the embodiment of FIG. 1 , the first doped region 112C and the second doped region 116C in the semiconductor layer 110C are P-type semiconductors, and the transition region 114C is an N-type semiconductor. Fig.15A and Fig. 15B In the embodiment of FIG. 5 , the first electrode E1 and the second electrode E2 are both electrically connected to the P-type semiconductor.

[0103] In this embodiment, when the light beam irradiates the PN diode, the PN diode generates a photocurrent, thereby attracting or repelling the particles 300 .

Claims

1. An optical tweezers device, comprising: a transparent substrate; A semiconductor layer, located on the transparent substrate, and comprising a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region; a first electrode, located on the first doped region and electrically connected to the first doped region; and A dielectric layer is located on the semiconductor layer and has a first through hole overlapping the first electrode.

2. The optical tweezers device according to claim 1, further comprising: A second electrode is located on the second doped region and is electrically connected to the second doped region. 3 . The optical tweezers device as claimed in claim 2 , wherein the first electrode is an island structure, and the second electrode surrounds the first electrode. The optical tweezers device as claimed in claim 2 , wherein the dielectric layer covers a top surface of the second electrode. The optical tweezers device as claimed in claim 1 , wherein the second doped region surrounds the transition region.

6. The optical tweezers device as claimed in claim 1, wherein one of the first doped region and the second doped region is a P-type semiconductor, the other of the first doped region and the second doped region is an N-type semiconductor, and the transition region is an intrinsic semiconductor or a lightly doped semiconductor with a purity close to that of an intrinsic semiconductor. 7 . The optical tweezers device as claimed in claim 1 , wherein the first doped region and the second doped region are P-type semiconductors, and the transition region is an N-type semiconductor or a lightly doped semiconductor with a purity close to that of an intrinsic semiconductor. 8 . The optical tweezers device as claimed in claim 1 , wherein the first doped region and the second doped region are N-type semiconductors, and the transition region is a P-type semiconductor or a lightly doped semiconductor with a purity close to that of an intrinsic semiconductor.

9. The optical tweezers device according to claim 1, further comprising: A reflective layer, wherein the transparent substrate is located between the reflective layer and the semiconductor layer.

10. The optical tweezers device according to claim 1, further comprising: an insulating layer located between the dielectric layer and the semiconductor layer; a pair of electrodes overlapping the first electrode; a buffer solution located between the counter electrode and the first electrode; and A plurality of particles are located in the buffer solution.

11. A method for manufacturing an optical tweezers device, comprising: forming a semiconductor material layer on a transparent substrate; Performing a plurality of doping processes on the semiconductor material layer to form a semiconductor layer including a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region; forming a first electrode on the first doped region; and A dielectric layer is formed on the semiconductor layer, wherein the dielectric layer has a first through hole overlapping the first electrode.

12. The method for manufacturing the optical tweezers device according to claim 11, further comprising: A second electrode is formed on the second doped region, wherein the first electrode and the second electrode belong to the same conductive film layer, and the dielectric layer covers the top surface of the second electrode.

13. The method for manufacturing the optical tweezers device according to claim 11, further comprising: forming a protective adhesive layer on the dielectric layer; forming a reflective layer on a side of the transparent substrate facing away from the semiconductor layer; as well as Remove the protective adhesive layer. 14 . The method for manufacturing an optical tweezers device as claimed in claim 13 , wherein the protective adhesive layer is filled into the first through hole.

15. The method for manufacturing the optical tweezers device according to claim 11, further comprising: forming an insulating material layer on the semiconductor layer; Performing an annealing process on the semiconductor layer and the insulating material layer to diffuse the hydrogen element in the insulating material layer into the semiconductor layer; as well as The insulating material layer is patterned to form an insulating layer exposing the first doped region and the second doped region, wherein the dielectric layer is formed on the insulating layer.

16. The method for manufacturing an optical tweezers device as claimed in claim 11, wherein performing a plurality of doping processes on the semiconductor material layer comprises: forming a first mask pattern on a first region of the semiconductor material layer; Using the first mask pattern as a mask, a first doping process is performed on a second region and a third region of the semiconductor material layer; forming a second mask pattern on the first region and the second region of the semiconductor material layer; Using the second mask pattern as a mask, a second doping process is performed on a third region of the semiconductor material layer, wherein the third region corresponds to the position of the first doping region, the second region corresponds to the position of the second doping region, and the first region corresponds to the position of the transition region.

17. The method for manufacturing the optical tweezers device according to claim 11, further comprising: providing a pair of counter electrodes overlapping the first electrode; Providing a buffer solution between the counter electrode and the first electrode; as well as A plurality of particles are provided in the buffer solution. 18 . The method for manufacturing an optical tweezers device as claimed in claim 11 , wherein the second doped region surrounds the transition region.

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