A flexible array substrate and manufacturing method thereof, and a flexible display panel

Abstract

The present application provides a flexible array substrate and a manufacturing method thereof and a flexible display panel, which includes a pixel island region and a flexible region surrounding the pixel island region, and the flexible array substrate further includes: a flexible substrate; a flexible film formed on the flexible substrate and located in the flexible region; and a thin film transistor located in the pixel island region. By forming a flexible film located between the pixel island regions on the flexible substrate, when the flexible array substrate is bent, the flexible film can buffer the bending stress, thereby preventing the bending from damaging the circuit and affecting the performance of the flexible array substrate.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a flexible array substrate and a manufacturing method thereof, and a flexible display panel including the flexible array substrate. Background Art

[0002] With the rapid growth of demand for portable mobile devices, wearable display products, etc., flexible display technology has made great progress in recent years. Among the display technologies that can realize flexible display, OLED (Organic Light Emitting Display) is considered to be one of the most promising technologies in flexible display technology due to its excellent performance such as fast response speed, wide viewing angle, light weight, low power consumption, and high brightness. In flexible display panels, the TFT devices of flexible products are easily damaged by bending stress, resulting in poor display.

[0003] Therefore, there are defects in the prior art, which need to be solved urgently. Summary of the invention

[0004] The present application provides a flexible array substrate, which can solve the problem of preventing circuits of the flexible array substrate from being damaged when subjected to bending stress.

[0005] To solve the above problems, the technical solutions provided by this application are as follows:

[0006] A flexible array substrate comprises: a pixel island region and a flexible region surrounding the pixel island region, and the flexible array substrate further comprises:

[0007] Flexible substrates;

[0008] a flexible film formed on the flexible substrate and located in the flexible region; and

[0009] The thin film transistor is located in the pixel island region.

[0010] In some embodiments of the present invention, the flexible film includes a first flexible film surrounding one side of the thin film transistor and a second flexible film surrounding the other side of the thin film transistor, and the first flexible film and the second flexible film are disposed together around the thin film transistor.

[0011] In some embodiments of the present invention, the second flexible film includes a plurality of longitudinal strip structures extending along a first direction and a plurality of longitudinal strip structures extending along a second direction, the second flexible film divides the flexible substrate into a plurality of grid areas, and the first flexible film includes a plurality of first flexible portions, and the first flexible portions are located in the grid areas.

[0012] In some embodiments of the present invention, the material of the first flexible film is the same as that of the second flexible film, and the first flexible film includes a polymer film layer and elastic particles dispersed in the polymer film layer.

[0013] In some embodiments of the present invention, the thickness of the first flexible film is 6 micrometers to 7 micrometers; the weight ratio of the elastic particles to the first flexible film is between 5% and 10%.

[0014] In some embodiments of the present invention, the elastic particles include an inner layer of inorganic nanoparticles and an organic coating layer coating the inorganic nanoparticles.

[0015] In some embodiments of the present invention, the particle size of the elastic particles is between 0.1 micrometers and 0.2 micrometers, and the particle size of the inorganic nanoparticles is between 0.05 micrometers and 0.15 micrometers.

[0016] In some embodiments of the present invention, the flexible array substrate further includes a signal line, the signal line is located in the flexible region and connects the plurality of thin film transistors, and the second flexible film covers the signal line.

[0017] A method for manufacturing a flexible array substrate, the method comprising the following steps:

[0018] providing a flexible substrate, the flexible substrate being divided into a pixel island region and a flexible region surrounding the pixel island region, and a flexible film being formed in the flexible region; and

[0019] A thin film transistor is formed in the pixel island region.

[0020] In some embodiments of the present invention, while forming the thin film transistor in the pixel island region, the step of forming a signal line on the flexible substrate is also included, and the flexible film includes a first flexible film surrounding one side of the thin film transistor and a second flexible film surrounding the other side of the thin film transistor, and the first flexible film and the second flexible film are arranged together around the thin film transistor.

[0021] A flexible display panel comprises the flexible array substrate as described in any one of the above.

[0022] The beneficial effects of the present application are as follows: the present application provides a flexible array substrate and a flexible display panel, wherein the flexible array substrate includes a flexible area and a pixel island area, wherein the pixel island area is an area where a thin film transistor is arranged, and the flexible area is an area other than the pixel island area, wherein a flexible film is arranged within the flexible area, and wherein the flexible film is arranged around the thin film transistor, so that when the flexible array substrate is bent, the flexible film can disperse the stress of the bending to avoid bending damaging the circuit and affecting the performance of the flexible array substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0024] Figure 1 A cross-sectional schematic diagram of a flexible substrate provided in the first embodiment of the present application;

[0025] Figure 2 For Figure 1 A cross-sectional view of a photoresist formed on a surface of a provided flexible substrate;

[0026] Figure 3 A plan view of forming a first flexible film on a flexible region of a flexible substrate;

[0027] Figure 4 for Figure 3 The cross-section along the A1-A2 direction;

[0028] Figure 5 For Figure 3 A schematic diagram of forming a protective layer on the surface of a first flexible film based on the present invention;

[0029] Figure 6 For Figure 5 A cross-sectional view of removing the photoresist from the surface of the flexible substrate based on the present invention;

[0030] Figure 7 is a cross-sectional view of a thin film transistor formed in a pixel island region on a surface of a flexible substrate;

[0031] Figure 8 It is a plan view of forming a thin film transistor in a pixel island region on a surface of a flexible substrate;

[0032] Fig. 9 is a cross-sectional view of a signal line formed on the surface of a flexible substrate;

[0033] Fig.10 It is a cross-sectional view of a flexible array substrate obtained by forming a second flexible film on the flexible area of ​​the flexible substrate and removing the glass substrate;

[0034] Fig.11 is a plan view of the formed flexible array substrate;

[0035] Fig.12 It is a schematic diagram of mechanical analysis of the flexible array substrate of the present application subjected to bending stress.

[0036] Description of Reference Numerals

[0037] 100-flexible array substrate; 1-flexible substrate; 11-first flexible film;

[0038] 2-flexible film; 130-first longitudinal strip structure; 132-second longitudinal strip structure;

[0039] 3-thin film transistor; 13-second flexible film; 101-flexible area; 4-signal line;

[0040] 103 - pixel island area; 10 - glass substrate; 110 - first flexible portion;

[0041] 30-light shielding layer; 31-buffer layer; 32-active layer; 21-polymer film layer; 23-elastic particles;

[0042] 230-inorganic nanoparticles; 232-organic coating layer; 6-protective layer; 12-photoresist;

[0043] 33 - gate insulating layer; 34 - gate electrode; 35 - interlayer insulating layer; 320 - source contact region;

[0044] 322-drain contact area; 40-scan line; 42-data line; 134-grid area;

[0045] 36-source-drain electrode layer; 360-source electrode; 362-drain electrode; 301-first via hole;

[0046] 302 - second via hole; 303 - third via hole. DETAILED DESCRIPTION

[0047] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0048] In the description of the present application, it should be understood that the terms "longitudinal", "lateral", "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0049] The present application may repeat reference numbers and / or reference letters in different examples. Such repetition is for the purpose of simplicity and clarity and does not indicate the relationship between the various embodiments and / or settings discussed. The flexible display substrate and its manufacturing method and the flexible display panel of the present application are described in detail below in conjunction with specific embodiments.

[0050] Among display technologies that can achieve flexible display, OLED is considered to be one of the most promising technologies in flexible display technology because of its excellent performance such as fast response speed, wide viewing angle, light weight, low power consumption and high brightness. However, the TFT devices of flexible products are easily damaged by bending stress, resulting in poor display. At present, a buffer layer can be added between the OLED display panel and the supporting structure to solve the impact of bending stress on TFT. However, such a structure will increase the thickness of the flexible display panel.

[0051] The flexible display panel provided by the present invention is provided with a flexible film around the pixel island area, so that when the flexible film is used to buffer the inner bending stress of the flexible display panel, the thickness of the flexible display panel and the flexible array substrate 100 will not be increased.

[0052] For details, please refer to Fig.10 and Fig.11 , Fig.10 A cross-sectional view of a flexible array substrate 100 provided by the present invention, Fig.11The present invention provides a plan view of a flexible array substrate 100, wherein the flexible array substrate 100 includes a flexible substrate 1, a flexible film 2, a thin film transistor 3, and a signal line 4. The flexible array substrate 100 includes a flexible region 101 and a pixel island region 103. The thin film transistor 3 is arranged in the pixel island region 103, the flexible region 101 is an area other than the pixel island region 103, the flexible region 101 surrounds the pixel island region 103, and the flexible film 2 is arranged in the flexible region 101.

[0053] The material of the flexible substrate 1 can be common polyimide or photosensitive polyimide, preferably photosensitive polyimide. When the flexible array substrate 100 is subsequently manufactured, the flexible substrate 1 is formed on the glass substrate 10 to facilitate subsequent laser irradiation and peeling of the glass substrate 10 .

[0054] The flexible film 2 includes a first flexible film 11 surrounding one side of the thin film transistor 3 and a second flexible film 13 surrounding the other side of the thin film transistor 3 . The first flexible film 11 and the second flexible film 13 are disposed together around the thin film transistor 3 .

[0055] The second flexible film 13 includes a plurality of first longitudinal strip structures 130 extending along a first direction and a plurality of second longitudinal strip structures 132 extending along a second direction. The first longitudinal strip structures 130 and the second longitudinal strip structures 132 divide the flexible substrate 1 into a plurality of grid areas 134. The first flexible film 11 includes a plurality of first flexible portions 110. The first flexible portions 110 are located in the grid areas 134.

[0056] The thin film transistor 3 is located in the pixel island region 103. The thin film transistor 3 is any thin film transistor 3 structure. For example, in this embodiment, the thin film transistor 3 is a top-gate thin film transistor 3. The thin film transistor 3 includes a light shielding layer 30 located on the flexible substrate 1, a buffer layer 31 located on the surface of the light shielding layer 30, an active layer 32 located on the surface of the buffer layer 31, a gate insulating layer 33 located on the surface of the active layer 32, a gate electrode 34 located on the surface of the gate insulating layer 33, an interlayer insulating layer 35 located on the surface of the gate electrode 34, and a source-drain electrode layer 36 located on the surface of the interlayer insulating layer 35. The source-drain electrode layer 36 includes a source electrode 360 ​​and a drain electrode 362. The projected area of ​​the gate insulating layer 33 on the active layer 32 is smaller than the area of ​​the gate insulating layer 33. Thus, the gate insulating layer 33 exposes a portion of the active layer 32 to form a source contact area 320 and a drain contact area 322. The source electrode 360 ​​is connected to the source contact area 320 through a first via hole 301, the drain electrode 362 is connected to the drain contact area 322 through a second via hole 302, and the drain electrode 362 is also connected to the light shielding layer 30 through a third via hole 303. The top-gate thin-film transistor 3 has lower parasitic capacitance and better ductility because there is no overlap between the source, drain and gate electrode 34, and can avoid the A-Si TFT from generating a large parasitic capacitance due to the overlap between the gate electrode 34 and the source 360 ​​and the drain 362. Therefore, the top-gate thin-film transistor 3 can reduce the delay in the signal transmission process. At the same time, the self-aligned manufacturing method is adopted, which is conducive to the preparation of short-channel devices, and the metal oxide IGZO is used as the active layer 32, which has a high electron mobility and is conducive to improving the device characteristics. The top-gate thin-film transistor 3 structure can adapt to the development trend of the display field in the future.

[0057] The signal line 4 is located in the flexible region 101 and connects the plurality of thin film transistors 3. In this embodiment, the signal line 4 includes a plurality of scan lines 40 extending along a first direction and a plurality of data lines 42 extending along a second direction, and each thin film transistor 3 is connected to a scan line 40 of a corresponding row and a data line 42 of a corresponding column. The second flexible film 13 covers the signal line 4, more specifically, the first longitudinal strip structure 130 covers the scan line 40, and the second longitudinal strip structure 132 covers the data line 42.

[0058] The first flexible film 11 and the second flexible film 13 are made of the same material and have the same thickness. The first flexible film 11 includes a polymer film layer 21 and elastic particles 23 dispersed in the polymer film layer 21. The thickness of the first flexible film 11 is 6 microns to 7 microns. The thickness of the first flexible film 11 is equal to or slightly less than the thickness of the thin film transistor 3. For example, the upper surface of the first flexible film 11 is flush with the interlayer insulating layer 35 of the thin film transistor 3. The thickness of the first flexible film 11 is set based on the thickness of the thin film transistor 3. If the thickness of the first flexible film 11 is too thin, the stress of the thin film transistor 3 cannot be dispersed; if the thickness of the first flexible film 11 is too thick, the weight of the first flexible film 11 borne by the flexible substrate 1 will increase, which is not conducive to the thinness of the flexible array substrate 100.

[0059] The material of the polymer film layer 21 can be polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyarylate (PAR), polycarbonate (PC), polyetherimide (PEI) and polyethersulfone (PS).

[0060] The weight ratio of the elastic particles 23 to the first flexible film 11 is between 5% and 10%. As the content of the elastic particles 23 in the polymer film layer 21 increases, the elastic particles 23 are arranged closely, and the gaps between the elastic particles 23 are too small, so that the elastic effect of the elastic particles 23 cannot be fully exerted; if the content of the elastic particles 23 is too low, each elastic particle 23 is subjected to too many force directions as a separate force point, and the bending stress cannot be well dispersed.

[0061] The elastic particles 23 include an inner layer of inorganic nanoparticles 230 and an organic coating layer 232 coating the inorganic nanoparticles 230. The organic coating layer 232 may be polydimethylsiloxane (PDMS), which is an organic silicon material with good deformation performance and certain elasticity, which is conducive to buffering bending stress. The inorganic nanoparticles 230 may be SiO2, Al2O3, TiO2, ZnO, ZrO2, Fe2O3, or inert metal particles, such as nano-gold and nano-palladium.

[0062] The polymer film layer 21 is doped with elastic particles 23. The elastic particles 23 have a certain elasticity, so they can buffer the bending stress and prevent the bending stress from being quickly transmitted to the thin film transistor 3 and causing circuit damage to the thin film transistor 3. Fig.12When the flexible display panel is bent, each elastic particle 23 serves as a stress point in the polymer film layer 21, that is, the bending stress will be transmitted to each elastic particle 23. Due to the circular structure of the elastic particle 23 and the different positions of each elastic particle 23, the stress angle of each elastic particle 23 is slightly different, that is, the stress directions of F1, F2, F3, and Fx shown in the figure are different. If the bending stress is decomposed along a certain direction (such as Fx1 and Fy1 shown in the figure), the forces in certain directions can be completely or partially offset due to their opposite directions, thereby dispersing or reducing the bending stress. This can also avoid bending damaging the thin film transistor 3 circuit and affecting the performance of the flexible array substrate 100.

[0063] Considering the thickness of the first flexible film 11, the particle size of the elastic particles 23 is between 0.1 microns and 0.2 microns. If the particle size of the elastic particles 23 is too large, the difference in the stress angles of the elastic particles 23 at different positions in the polymer film layer 21 is too large, so that the force components that can be offset are limited, that is, the stress components that can be offset are small, and the dispersion effect on stress or external pressure is limited. If the particle size of the elastic particles 23 is too small, it means that the number of particles doped in the polymer film layer 21 is too large, so that the difference in the stress angles of the elastic particles 23 is too small, resulting in the stress directions of various positions in the polymer film layer 21 being basically consistent, decomposed along a specific direction, and the stress components that can be offset are small.

[0064] The particle size of the inorganic nanoparticles 230 is 0.05 microns to 0.15 microns. The particle size of the inorganic nanoparticles 230 is too small to serve as an independent stress point in the polymer film layer 21. The inorganic nanoparticles 230 are too large. When the particle size of the elastic particles 23 is met, the thickness of the organic coating layer 232 is too thin. When subjected to external force or bending stress, the resilience of the elastic particles 23 cannot be well reflected. The elastic particles 23 can be arranged at intervals, and the gaps between the elastic particles 23 can make it easy to rebound after deformation.

[0065] The present invention also provides a flexible display panel including the flexible array substrate 100. The flexible display panel can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.

[0066] The present invention also relates to a method for manufacturing a flexible array substrate 100, the method comprising the following steps:

[0067] S1: Please refer to Figure 1, a flexible substrate 1 is provided. In the present embodiment, the flexible substrate 1 is formed on a glass substrate 10, and the stripping substrate 10 provides support for the flexible substrate 1. The flexible substrate 1 is divided into a flexible area 101 and a pixel island area 103. The flexible substrate 1 is also called a flexible substrate, and can be made of a flexible PI material commonly used in the industry. The PI material has good flexibility, tolerance, expansion resistance, stress resistance, etc., can be bent and stretched repeatedly, and can carry the signal line 4 well, and the process integration feasibility is high. In addition, the flexible substrate 1 can also be made of nano-composite materials, polydimethylsiloxane (PDMS), etc., to improve the bending stability of the flexible array substrate 100. In the present embodiment, the flexible substrate 1 is formed on a glass substrate.

[0068] See also Figure 2 , a photoresist 12 is formed in the pixel island region 103 to protect the pixel island region 103, see Figure 3 and Figure 4 A first flexible film 11 is formed in the flexible region 101, and the first flexible film 11 includes a plurality of first flexible portions 110 spaced apart from each other. The first flexible film 11 includes a polymer film layer 21 and elastic particles 23 dispersed in the polymer film layer 21. The thickness of the first flexible film 11 is 6 microns to 7 microns. The first flexible film 11 can be formed by spin coating, spray coating, screen printing, or inkjet printing.

[0069] See also Figure 5 After forming the first flexible film 11, a protective layer 6 is formed on the surface of the first flexible film 11 to protect the surface of the first flexible film 11. In this embodiment, the protective layer 6 is amorphous silicon and can be formed by evaporation.

[0070] See also Figure 6 , remove the photoresist 12 on the surface of the flexible substrate 1 to expose the pixel island area 103 .

[0071] S2: Please refer to Figure 7 , Figure 8 and Fig. 9 , a thin film transistor 3 and a signal line 4 are formed in the pixel island region 103, and the thin film transistor 3 is located between adjacent first flexible portions 110. The signal line 4 connects a plurality of the thin film transistors 3. After the thin film transistor 3 and the signal line 4 are formed, the protective layer 6 is removed by plasma etching.

[0072] In this embodiment, the thin film transistor 3 includes a light shielding layer 30 located on the flexible substrate 1, a buffer layer 31 located on the surface of the light shielding layer 30, an active layer 32 located on the surface of the buffer layer 31, a gate insulating layer 33 located on the surface of the active layer 32, a gate electrode 34 located on the surface of the gate insulating layer 33, an interlayer insulating layer 35 located on the surface of the gate electrode 34, and a source-drain electrode layer 36 located on the surface of the interlayer insulating layer 35. The source-drain electrode layer 36 includes a source electrode 360 ​​and a drain electrode 362. The projected area of ​​the gate insulating layer 33 on the active layer 32 is smaller than the area of ​​the gate insulating layer 33. Thus, the gate insulating layer 33 exposes a portion of the active layer 32 to form a source contact area 320 and a drain contact area 322. The source electrode 360 ​​is connected to the active layer 32 through a first via hole 301, the drain electrode 362 is connected to the active layer 32 through a second via hole 302, and the drain electrode 362 is also connected to the light shielding layer 30 through a third via hole 303.

[0073] In this embodiment, there is no limitation on the structure of the thin film transistor 3. Of course, it is understandable that the thin film transistor 3 may also have other structures, for example, it may be a bottom-gate thin film transistor 3.

[0074] The signal lines 4 include a plurality of scan lines 40 extending along a first direction and a plurality of data lines 42 extending along a second direction. In this embodiment, the scan lines 40 may be formed when the gate electrode 34 is formed, and the scan lines 40 may be formed when the source-drain electrode layer 36 is formed. Each scan line 40 is connected to the thin film transistors 3 in the same row, and each data line 42 is connected to the thin film transistors 3 in the corresponding column.

[0075] S3: Please refer to Fig.10 and Fig.11, a second flexible film 13 is formed on the flexible substrate 1, the second flexible film 13 covers the signal line 4, the second flexible film 13 includes a plurality of first longitudinal strip structures 130 extending along the first direction and a plurality of second longitudinal strip structures 132 extending along the second direction, the extension directions of the first longitudinal strip structures 130 and the second longitudinal strip structures 132 are respectively the same as the extension directions of the scanning lines 40 and the data lines 42. In this embodiment, the first flexible film 11 is formed before the thin film transistor 3, and the advantage of this is that after the first flexible film 11 is formed, a protective layer 6 is formed on the surface of the first flexible film 11 to protect it, and then the film layers of the thin film transistor 3 can be sequentially formed on the flexible substrate 1, and after the thin film transistor 3 is formed, the protective layer 6 on the surface of the first flexible film 11 can be removed by dry etching. If the thin film transistor 3 is formed before the first flexible film 11, and the thin film transistor 3 is formed on the flexible substrate 1 first, then the flexible area 101 on the flexible substrate 1 needs to be coated with a photoresist for protection first, and then the thin film transistor 3 is formed. However, when forming the light shielding layer 30, the gate electrode 34, the source 360, and the drain 362 of the thin film transistor 3, the exposure and development process is involved. The photoresist of the flexible area 101 will be etched away during the development, so that the flexible area 101 cannot be protected. Therefore, in this embodiment, the first flexible film 11 is formed first, and then the thin film transistor 3 and the signal line 4 are formed in the pixel island area 103, and finally the second flexible film 13 is formed on the surface of the signal line 4.

[0076] S4: Please refer again Fig.10 , the glass substrate 10 is peeled off to obtain the flexible array substrate 100 .

[0077] In summary, the present application provides a flexible display panel and a flexible array substrate 100 and a manufacturing method thereof, wherein the flexible array substrate 100 includes a flexible area 101 and a pixel island area 103, wherein a thin film transistor 3 is arranged in the pixel island area 103, wherein the flexible area 101 is an area other than the pixel island area 103, wherein the flexible area 101 surrounds the pixel island area 103, wherein a flexible film 2 is arranged in the flexible area 101, thereby the flexible film 2 completely surrounds the four sides of the thin film transistor 3, and can evenly distribute the internal bending stress in the thin film transistor 3, and will not increase the thickness of the flexible display panel and the flexible array substrate 100 when protecting the thin film transistor 3; wherein the flexible film 2 includes a polymer film layer 21 and elastic particles 23 dispersed in the polymer film layer 21, thereby, when the flexible array substrate 100 is bent, the elastic particles 23 dispersed in the flexible film as separate force points can disperse the bending stress and withstand a certain external pressure, thereby avoiding bending damage to the circuit and affecting the performance of the flexible array substrate 100.

[0078] In summary, although the present application has been disclosed as above with preferred embodiments, the above preferred embodiments are not intended to limit the present application. Ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application shall be based on the scope defined in the claims.

Claims

1. A flexible array substrate, characterized in that: include: A pixel island region and a flexible region surrounding the pixel island region, the flexible array substrate further comprising: Flexible substrates; a flexible film formed on the flexible substrate and located in the flexible region; and A thin film transistor, located in the pixel island region, comprising a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer and a source-drain electrode layer stacked on the flexible substrate; A signal line, the signal line is located in the flexible area and connects the plurality of thin film transistors; The flexible film includes a first flexible film surrounding one side of the thin film transistor and a second flexible film surrounding the other side of the thin film transistor, the first flexible film and the second flexible film are arranged together around the thin film transistor, the thickness of the first flexible film is the same as the thickness of the second flexible film, the upper surface of the first flexible film is flush with the interlayer insulating layer, and the second flexible film covers the signal line.

2. The flexible array substrate according to claim 1, characterized in that: The second flexible film includes a plurality of first longitudinal strip structures extending along a first direction and a plurality of second longitudinal strip structures extending along a second direction, the first longitudinal strip structures and the second longitudinal strip structures divide the flexible substrate into a plurality of grid areas, the first flexible film includes a plurality of first flexible portions, and the first flexible portions are located in the grid areas.

3. The flexible array substrate according to claim 2, characterized in that: The material of the first flexible film is the same as that of the second flexible film. The first flexible film includes a polymer film layer and elastic particles dispersed in the polymer film layer.

4. The flexible array substrate according to claim 3, characterized in that: The thickness of the first flexible film is 6 micrometers to 7 micrometers; the weight ratio of the elastic particles to the first flexible film is between 5% and 10%.

5. The flexible array substrate according to claim 3, characterized in that: The elastic particles include inner layer inorganic nanoparticles and an organic coating layer coating the inorganic nanoparticles.

6. The flexible array substrate according to claim 5, characterized in that: The particle size of the elastic particles is between 0.1 micrometers and 0.2 micrometers, and the particle size of the inorganic nanoparticles is between 0.05 micrometers and 0.15 micrometers.

7. A method for manufacturing a flexible array substrate, characterized in that: The production method comprises the following steps: Providing a flexible substrate, wherein the flexible substrate is divided into a pixel island region and a flexible region surrounding the pixel island region, and a flexible film is formed in the flexible region; as well as A thin film transistor and a signal line are formed in the pixel island region, wherein the thin film transistor includes a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer and a source-drain electrode layer stacked on the flexible substrate, and the signal line is located in the flexible region and connects a plurality of the thin film transistors; The flexible film includes a first flexible film surrounding one side of the thin film transistor and a second flexible film surrounding the other side of the thin film transistor, the first flexible film and the second flexible film are arranged together around the thin film transistor, the thickness of the first flexible film is the same as the thickness of the second flexible film, and the upper surface of the first flexible film is flush with the interlayer insulating layer.

8. The method for manufacturing a flexible array substrate according to claim 7, wherein: The step of forming a signal line on a flexible substrate is also included while forming a thin film transistor in the pixel island area. The flexible film includes a first flexible film surrounding one side of the thin film transistor and a second flexible film surrounding the other side of the thin film transistor. The first flexible film and the second flexible film are arranged together around the thin film transistor.

9. A flexible display panel, characterized in that: It comprises the flexible array substrate as claimed in any one of claims 1 to 6.

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