Processing device and processing method

Abstract

This invention relates to processing apparatus and processing methods. A technique is provided that enables adjustment of the inter-surface uniformity of gas supply to a substrate. One aspect of the processing apparatus disclosed herein includes: a processing container having a generally cylindrical shape; an injector extending longitudinally along the inner side of the inner wall of the processing container, the injector having a plurality of inlets for introducing processing gas and a plurality of gas holes for ejecting the processing gas introduced from the plurality of inlets into the processing container; and a control unit that varies the flow rate ratio of the processing gas introduced from the plurality of inlets into the injector.

Description

Technical Field

[0001] This disclosure relates to processing apparatus and processing methods. Background Technology

[0002] A known gas processing apparatus comprises: a processing container that houses a boat for mounting a substrate; and a gas pipe that extends vertically along the inner wall of the processing container near the processing container and has a plurality of gas ejection holes in the length direction (for example, see Patent Document 1). In Patent Document 1, two gas inlets are provided in the gas pipe, causing the gas flowing in from each gas inlet to collide midway through the flow path within the gas pipe, thereby homogenizing the ejection pressure of the gas ejected through the plurality of gas ejection holes at each gas ejection hole.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-196839 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for adjusting the inter-surface uniformity of gas supply to a substrate.

[0008] Solution for solving the problem

[0009] A processing apparatus according to the present disclosure comprises: a processing container having a generally cylindrical shape; an injector extending along the inner side of the inner wall of the processing container in a length direction, the injector having a plurality of inlets for introducing processing gas and a plurality of gas holes for ejecting the processing gas introduced from the plurality of inlets into the processing container; and a control unit that changes the flow rate ratio of the processing gas introduced from the plurality of inlets into the injector.

[0010] The effects of the invention

[0011] According to this disclosure, the inter-surface uniformity of gas supply to the substrate can be adjusted. Attached Figure Description

[0012] Figure 1 This is a schematic diagram illustrating an example of a processing apparatus for an implementation method.

[0013] Figure 2 It means Figure 1 A diagram showing an example of an injector in a processing device.

[0014] Figure 3 It means Figure 1The figure shows a first modified example of the injector of the processing device.

[0015] Figure 4 It means Figure 1 The figure shows a second modified example of the injector of the processing device.

[0016] Figure 5 It means Figure 1 The figure shows the third modified example of the injector of the processing device.

[0017] Figure 6 It means that it was used. Figure 2 The graph shows the analysis results of the mole fraction of SiH2 under the condition of an injector (inner diameter: 13.5 mm).

[0018] Figure 7 It means that it was used. Figure 2 A graph showing the analysis results of the mass flow rate in the case of an injector (inner diameter: 13.5 mm).

[0019] Figure 8 It means that it was used. Figure 3 The graph shows the analysis results of the mole fraction of SiH2 under the condition of the injector.

[0020] Figure 9 It means that it was used. Figure 3 The graph shows the analysis results of the mass flow rate under the condition of the ejector.

[0021] Figure 10 It means that it was used. Figure 2 The graph shows the analysis results of the mole fraction of SiH2 under the condition of the injector (inner diameter: 5.4 mm).

[0022] Figure 11 It means that it was used. Figure 2 A graph showing the analysis results of the mass flow rate under the condition of an injector (inner diameter: 5.4 mm).

[0023] Figure 12 It means that it was used. Figure 4 The graph shows the analysis results of the mole fraction of SiH2 under the condition of the injector.

[0024] Figure 13 It means that it was used. Figure 4 The graph shows the analysis results of the mass flow rate under the condition of the ejector.

[0025] Figure 14 This is a graph showing the analytical results of the mole fraction of SiH2 in Si2H6 with the addition of N2.

[0026] Figure 15This is a graph showing the analytical results of the mole fraction of SiH2 in Si2H6 with the addition of N2.

[0027] Figure 16 This is a graph showing the analysis results of the mole fraction of SiH2 when the total flow rate of Si2H6 is changed.

[0028] Figure 17 Figure (1) shows the analytical results of the mole fraction of SiH2 when the pore size of the gas pores was changed.

[0029] Figure 18 Figure (2) shows the analytical results of the mole fraction of SiH2 when the pore size of the gas pores was changed.

[0030] Figure 19 Figure (3) shows the analytical results of the mole fraction of SiH2 when the pore size of the gas pores was changed. Detailed Implementation

[0031] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding components or parts are labeled with the same or corresponding reference numerals, and repeated descriptions are omitted.

[0032] [Processing device]

[0033] Reference Figure 1 This section describes an example of a processing apparatus according to an embodiment. The processing apparatus of this embodiment is a batch-type, vertically oriented processing apparatus capable of simultaneously performing film deposition on multiple substrates in batches. The processing apparatus of this embodiment is, for example, an apparatus for depositing films on substrates using chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0034] The processing apparatus 10 includes: a processing container 34 that houses a substrate W; and a cover 36 that seals the opening at the lower end of the processing container 34 on the Z2 side. The substrate W is, for example, a semiconductor wafer such as a silicon wafer. Furthermore, the processing apparatus 10 includes: a boat 38 capable of being housed within the processing container 34 and holding multiple substrates W at predetermined intervals; a gas supply unit 40 that supplies gas into the processing container 34; and an exhaust unit 41 that exhausts gas from the processing container 34. A heating unit 42 for heating the interior of the processing container 34 is provided on the outside of the processing container 34.

[0035] The processing container 34 is formed by an inner tube 44 of generally cylindrical shape and an outer tube 46 of generally cylindrical shape. The lower end of the inner tube 44 is open on the Z2 side and has a top 44A on the Z1 side. The lower end of the outer tube 46 is open on the Z2 side and covers the outside of the inner tube 44. It also has a top on the Z1 side. The inner tube 44 and the outer tube 46 are formed of heat-resistant materials such as quartz and are arranged coaxially along the Z1-Z2 direction to form a double-layer tube structure.

[0036] The top 44A of the inner tube 44 is, for example, flat. A nozzle receiving portion 48 is formed on the inner side of the inner tube 44 along the Z1-Z2 direction, which receives the injector 76 described later. A portion of the sidewall of the inner tube 44 may also be formed with a protrusion 50 protruding outward in the X1 direction, and the interior of the formed protrusion 50 is configured as the nozzle receiving portion 48. On the X2 side of the inner tube 44, which is the opposite side to the nozzle receiving portion 48, a rectangular opening 52 with a predetermined width is formed along the Z1-Z2 direction.

[0037] Opening 52 is an exhaust port for venting air from the inner tube 44. The length of opening 52 in the Z1-Z2 direction is the same as or longer than the length of the boat 38. That is, the upper end of opening 52 on the Z1 side is longer than the position corresponding to the upper end of the boat 38 on the Z1 side, and the lower end of opening 52 on the Z2 side is longer than the position corresponding to the lower end of the boat 38 on the Z2 side.

[0038] The lower end of the processing container 34 on the Z2 side is supported by a manifold 54, for example, made of stainless steel and generally cylindrical in shape. A flange 56 is formed at the upper end of the manifold 54 on the Z1 side, and the lower end of the outer tube 46 on the Z2 side is connected to the flange 56. A sealing member 58, such as an O-ring, is provided between the flange 56 and the outer tube 46, and the flange 56 and the outer tube 46 are connected through the sealing member 58. In this embodiment, the area inside the processing container 34, enclosed by the processing container 34, the manifold 54, and the cover 36, is sometimes described as the interior of the processing container.

[0039] A ring-shaped support portion 60 is provided on the inner wall of the upper Z1 side of the manifold 54, and the lower end of the inner tube 44 on the Z2 side is provided on the support portion 60 for support. A cover 36 is installed at the lower end opening on the Z2 side of the manifold 54 through a sealing member 62 such as an O-ring, to seal the lower end opening on the Z2 side of the processing container 34, i.e., the opening of the manifold 54. The cover 36 is made of stainless steel, for example.

[0040] A rotating shaft 66 is provided through the center of the cover 36 via a magnetic fluid sealing part 64. The lower part of the rotating shaft 66 on the Z2 side is rotatably supported by the arm 68A of the lifting part 68, which is composed of a boat lifting mechanism.

[0041] A rotating plate 70 is provided at the upper end of the rotating shaft 66 on the Z1 side. A boat 38 for holding the substrate W is placed on the rotating plate 70 via a quartz-made warming platform 72. Therefore, by raising and lowering the arm 68A using the lifting part 68, the cover 36 and the boat 38 can move together in the vertical direction, and the boat 38 can be fed into and out of the processing container 34.

[0042] A gas supply unit 40 is provided in the manifold 54 and is capable of supplying processing gas into the inner tube 44. The processing gas may contain, for example, a raw material gas and an additive gas. The raw material gas is the gas used to deposit a film on the substrate W, and may be, for example, a silicon-containing gas such as silane (SiH4) or disilane (Si2H6). The additive gas is the gas used to dilute the raw material gas, and may be, for example, an inactive gas such as nitrogen (N2) or argon (Ar). The gas supply unit 40 has a quartz injector 76. However, the gas supply unit 40 may also have additional injectors.

[0043] The injector 76 has two upright parts 76a and 76b. The ends of the two upright parts 76a and 76b on the Z1 direction side are bent toward each other and connected, and the ends on the Z2 direction side are bent in an L-shape toward the X1 side and are supported through the manifold 54.

[0044] A plurality of gas holes 76c are formed at predetermined intervals in an upright portion 76a of the ejector 76, and processing gas is ejected from each gas hole 76c in a generally horizontal direction. The predetermined interval is, for example, the same as the interval between the substrates W supported by the boat 38. In addition, the position of each gas hole 76c in the Z1-Z2 direction of the upright portion 76a is located in the middle between adjacent substrates W in the Z1-Z2 direction, which can efficiently supply processing gas to the space between substrates W. However, the predetermined interval of each gas hole 76c is not limited to the above case. It may also be provided every few substrates W.

[0045] Furthermore, the position of each gas hole 76c is not limited to the middle position between adjacent substrates W, and can be set at any position such as the same height as the substrate W. Moreover, the orientation of each gas hole 76c can be set to any direction such as towards the center of the substrate W, towards the outer periphery of the substrate W, or towards the inner tube 44.

[0046] A generally cylindrical heating section 42 is provided on the outer periphery of the outer tube 46 in a manner that surrounds the outer tube 46. The heating section 42 can be used to heat the gas contained in the substrate W inside the processing container 34 and in the upright sections 76a and 76b of the ejector 76.

[0047] One upright section 76a of the injector 76 is connected to a processing gas supply source GS via valve V1, flow controller M1, and valve V2. The other upright section 76b of the injector 76 is connected to a processing gas supply source GS via valve V3, flow controller M2, and valve V4. That is, upright sections 76a and 76b are connected to the same processing gas supply source GS. However, upright section 76b may also be connected to a different processing gas supply source than upright section 76a.

[0048] In the ejector 76, the processing gas from the processing gas supply source GS is introduced into the upright sections 76a and 76b by means of valves V1 to V4 under the control of the flow controllers M1 and M2, and is ejected into the inner tube 44 of the processing container 34 from the multiple gas holes 76c provided in the upright section 76a.

[0049] An exhaust port 82 is provided on the upper Z1 side wall of the manifold 54, above the support 60, through which gas in the inner pipe 44 is exhausted via the opening 52. An exhaust section 41 is connected to the exhaust port 82. The exhaust section 41 is provided with a pressure regulating valve 88, an exhaust passage 86, and a vacuum pump 90 in sequence from the exhaust port 82, which can perform vacuum exhaust of the interior of the processing container 34.

[0050] In this embodiment, a plurality of substrates W are disposed on the inner side of the inner tube 44 along a Z1-Z2 direction perpendicular to the wafer surface that serves as the substrate surface. Processing gas is ejected from a plurality of gas holes 76c formed in the upright portion 76a of the ejector 76 into the space between the substrates W. The ejected processing gas passes through the space between the substrates W and processes the substrates W. Gas that does not contribute to the processing is discharged from the opening 52 on the X2 side to the outside of the inner tube 44, passes through the space 84 between the inner tube 44 and the outer tube 46, and is exhausted from the exhaust port 82.

[0051] The overall operation of the processing device 10 is controlled by a control unit 95, such as a computer. Furthermore, the computer program that performs the overall operation of the processing device 10 may also be stored on a storage medium 96. The storage medium 96 may be, for example, a floppy disk, optical disk, hard disk, flash memory, DVD, etc.

[0052] In this embodiment, during the predetermined processing (e.g., film formation processing) of the substrate W, the control unit 95 controls valves V1 to V4 and flow controllers M1 and M2 to change the flow ratio of the processing gas introduced into the upright section 76a to the processing gas introduced into the upright section 76b.

[0053] Furthermore, the silicon-containing gas, used as the feed gas, is heated by the heating unit while flowing from upstream to downstream within the ejector. Therefore, the silicon-containing gas ejected from the upstream gas orifice and the silicon-containing gas ejected from the downstream gas orifice are heated at different times within the ejector. As a result, the flow rate and thermal decomposition rate differ between the silicon-containing gas ejected from the upstream and downstream gas orifices, leading to deviations in the uniformity of the film properties of the formed silicon film between the substrates W.

[0054] In this embodiment, the ejector 76 has multiple inlets, through which silicon-containing gas is introduced. Therefore, the upstream and downstream positional relationship can be varied with respect to the gas orifice 76c. This allows for variations in the flow rate and thermal decomposition rate distribution of the silicon-containing gas ejected toward the substrate W. Consequently, the distribution of film properties of the formed silicon film between the substrates W can be adjusted.

[0055] [Ejector]

[0056] Reference Figure 2 This indicates that as in Figure 1 The processing device 10 is equipped with an injector 76, which is an example of an injector 200.

[0057] The injector 200 includes a first upright portion 210 and a second upright portion 220. The first upright portion 210 and the second upright portion 220 have the same length and are connected to each other at the top.

[0058] The first upright portion 210 extends along the inner side of the inner wall of the processing container 34. The upper part of the first upright portion 210 bends towards the second upright portion 220 to form a connecting portion 211 that connects to the second upright portion 220, and the lower part is open to form an inlet 212 for introducing processing gas. The first upright portion 210 has the same inner diameter from the bottom to the top.

[0059] The first upright section 210 includes a plurality of gas holes 213 formed at intervals along its length. The plurality of gas holes 213 face the center side of the processing container 34. Thus, the plurality of gas holes 213 eject processing gas introduced from the inlet 212 of the first upright section 210 and the inlet 222 of the second upright section 220 (described later) toward the center of the processing container 34 in a generally horizontal direction. However, the plurality of gas holes 213 may also face a direction different from the center side of the processing container 34, such as the inner wall side of the processing container 34.

[0060] The second upright portion 220 extends along the inner side of the inner wall of the processing container 34. The second upright portion 220 is located adjacent to the first upright portion 210 in the circumferential direction of the processing container 34. However, the second upright portion 220 may also be located adjacent to the first upright portion 210 in the radial direction of the processing container 34. The upper part of the second upright portion 220 bends towards the first upright portion 210 to form a connecting portion 221 for connection with the first upright portion 210, and the lower part is open to form an inlet 222 for introducing processing gas.

[0061] The second upright portion 220 has the same inner diameter from bottom to top. The inner diameter of the second upright portion 220 is the same as that of the first upright portion 210.

[0062] In this ejector 200, by varying the flow rate ratio of the processing gas introduced into the ejector 200 from the inlets 212 and 222, the vertical distribution of the processing gas flow rate and thermal decomposition rate can be adjusted. This allows for adjustment of the inter-surface uniformity of the gas supply to the substrate W.

[0063] For example, by reducing the flow rate ratio of the processing gas introduced into the first upright section 210 from the inlet 212 to the processing gas introduced into the second upright section 220 from the inlet 222, the position with a slower flow rate can be moved from the upper part to the lower part of the first upright section 210. Furthermore, at the position with a slower flow rate, the residence time of the processing gas is longer, thus promoting the thermal decomposition of the processing gas. As a result, the position with a higher thermal decomposition rate can be moved from the upper part to the lower part of the first upright section 210.

[0064] Reference Figure 3 This indicates that as in Figure 1 The first modified example of the injector 300 is the injector 76 provided in the processing device 10. The injector 300 differs from the injector 200 in that the inner diameters of the first upright portion 310 and the second upright portion 320 are different.

[0065] The injector 300 includes a first upright portion 310 and a second upright portion 320. The first upright portion 310 and the second upright portion 320 have the same length and are connected to each other at the top.

[0066] The first upright portion 310 extends along the inner side of the inner wall of the processing container 34. The upper part of the first upright portion 310 bends towards the second upright portion 320 to form a connecting portion 311 that connects to the second upright portion 320, and the lower part is open to form an inlet 312 for introducing processing gas. The inner diameter of the first upright portion 310 is smaller at the connecting portion 311.

[0067] The first upright section 310 includes a plurality of gas holes 313 formed at intervals along its length. The plurality of gas holes 313 face the center side of the processing container 34. Thus, the plurality of gas holes 313 eject processing gas introduced from the inlet 312 of the first upright section 310 and the inlet 322 of the second upright section 320 (described later) toward the center of the processing container 34 in a generally horizontal direction. However, the plurality of gas holes 313 may also face a direction different from the center side of the processing container 34, such as the inner wall side of the processing container 34.

[0068] The second upright portion 320 extends along the inner side of the inner wall of the processing container 34. The second upright portion 320 is located adjacent to the first upright portion 310 in the circumferential direction of the processing container 34. However, the second upright portion 320 may also be located adjacent to the first upright portion 310 in the radial direction of the processing container 34. The upper part of the second upright portion 320 bends towards the first upright portion 310 to form a connecting portion 321 for connection with the first upright portion 310, and the lower part is open to form an inlet 322 for introducing processing gas.

[0069] The second upright portion 320 has the same inner diameter from bottom to top. The inner diameter of the second upright portion 320 is the same as the inner diameter of the connecting portion 311 of the first upright portion 310. In other words, the inner diameter of the second upright portion 320 is smaller than the inner diameter of the portion of the first upright portion 310 in which multiple gas holes 313 are formed.

[0070] In this ejector 300, by varying the flow rate ratio of the processing gas introduced into the ejector 300 from the inlets 312 and 322, the vertical distribution of the processing gas flow rate and thermal decomposition rate can be adjusted. This allows for adjustment of the inter-surface uniformity of the gas supply to the substrate W.

[0071] For example, by reducing the flow rate ratio of the processing gas introduced into the first upright section 310 from the inlet 312 to the processing gas introduced into the second upright section 320 from the inlet 322, the position with a slower flow rate can be moved from the upper part to the lower part of the first upright section 310. Furthermore, at the position with a slower flow rate, the residence time of the processing gas is longer, thus promoting the thermal decomposition of the processing gas. As a result, the position with a higher thermal decomposition rate can be moved from the upper part to the lower part of the first upright section 310.

[0072] Reference Figure 4 This indicates that as in Figure 1 The second variant of the injector 400 is the injector 76 provided in the processing device 10. The injector 400 differs from the injector 200 in that it has multiple gas holes 413 and 423 in both the first upright part 410 and the second upright part 420.

[0073] The injector 400 includes a first upright portion 410 and a second upright portion 420. The first upright portion 410 and the second upright portion 420 have the same length and are connected to each other at the top.

[0074] The first upright portion 410 extends along the inner side of the inner wall of the processing container 34. The upper part of the first upright portion 410 bends towards the second upright portion 420 to form a connecting portion 411 that connects to the second upright portion 420, and the lower part is open to form an inlet 412 for introducing processing gas. The first upright portion 410 has the same inner diameter from the bottom to the top.

[0075] The first upright section 410 includes a plurality of gas holes 413 formed at intervals along its length. The plurality of gas holes 413 face the center side of the processing container 34. Thus, the plurality of gas holes 413 eject processing gas introduced from the inlet 412 of the first upright section 410 and the inlet 422 of the second upright section 420 (described later) toward the center of the processing container 34 in a generally horizontal direction. However, the plurality of gas holes 413 may also face a direction different from the center side of the processing container 34, such as the inner wall side of the processing container 34.

[0076] The second upright portion 420 extends along the inner side of the inner wall of the processing container 34. The second upright portion 420 is located adjacent to the first upright portion 410 in the circumferential direction of the processing container 34. However, the second upright portion 420 may also be located adjacent to the first upright portion 410 in the radial direction of the processing container 34. The upper part of the second upright portion 420 bends towards the first upright portion 410 to form a connecting portion 421 for connection with the first upright portion 410, and the lower part is open to form an inlet 422 for introducing processing gas.

[0077] The second upright portion 420 has the same inner diameter from bottom to top. The inner diameter of the second upright portion 420 is the same as that of the first upright portion 410. However, the inner diameter of the second upright portion 420 may also be different from that of the first upright portion 410.

[0078] The second upright section 420 includes a plurality of gas holes 423 formed at intervals along its length. The plurality of gas holes 423 face the same side as the plurality of gas holes 413, i.e., the center side of the processing container 34. Thus, the plurality of gas holes 423 eject processing gas introduced from the inlet 412 of the first upright section 410 and the inlet 422 of the second upright section 420 towards the center of the processing container 34 in a generally horizontal direction. However, the plurality of gas holes 423 may also face a direction different from the center side of the processing container 34, for example, the inner wall side of the processing container 34. Additionally, the plurality of gas holes 423 may also face a direction different from the plurality of gas holes 413. The plurality of gas holes 423 are respectively provided at the midpoint between two adjacent gas holes 413 in the vertical direction. However, the plurality of gas holes 423 may also be provided at the same position in the vertical direction as the plurality of gas holes 413.

[0079] In this ejector 400, by varying the flow rate ratio of the processing gas introduced into the ejector 400 from the inlets 412 and 422, the vertical distribution of the processing gas flow rate and thermal decomposition rate can be adjusted. This allows for adjustment of the inter-surface uniformity of the gas supply to the substrate W.

[0080] Reference Figure 5 This indicates that as in Figure 1 The third variant of the injector 500 is the injector 76 provided in the processing device 10. The injector 500 differs from the injector 200 in that it includes a third upright part 530 that is connected midway to the first upright part 510.

[0081] The injector 500 includes a first upright section 510, a second upright section 520, and a third upright section 530. The first upright section 510 and the second upright section 520 have the same length and are connected to each other at the top. The third upright section 530 has a shorter length than the first upright section 510, and the top of the third upright section 530 is connected to the middle of the first upright section 510.

[0082] The first upright portion 510 extends along the inner side of the inner wall of the processing container 34. The upper part of the first upright portion 510 bends towards the second upright portion 520 to form a connecting portion 511 that connects to the second upright portion 520, and the lower part is open to form an inlet 512 for introducing processing gas. The first upright portion 510 has the same inner diameter from the bottom to the top.

[0083] The first upright section 510 includes a plurality of gas holes 513 formed at intervals along its length. The plurality of gas holes 513 face the center of the processing container 34. Thus, the plurality of gas holes 513 eject processing gas introduced from the inlet 512 of the first upright section 510, the inlet 522 of the second upright section 520 (described later), and the inlet 532 of the third upright section 530 (described later) towards the center of the processing container 34 in a substantially horizontal direction. However, the plurality of gas holes 513 may also face a direction different from the center of the processing container 34, such as the inner wall of the processing container 34.

[0084] The second upright portion 520 extends along the inner side of the inner wall of the processing container 34. The second upright portion 520 is located adjacent to the first upright portion 510 in the circumferential direction of the processing container 34. However, the second upright portion 520 may also be located adjacent to the first upright portion 510 in the radial direction of the processing container 34. The upper part of the second upright portion 520 bends towards the first upright portion 510 to form a connecting portion 521 for connection with the first upright portion 510, and the lower part is open to form an inlet 522 for introducing processing gas.

[0085] The second upright portion 520 has the same inner diameter from bottom to top. The inner diameter of the second upright portion 520 is the same as that of the first upright portion 510. However, the inner diameter of the second upright portion 520 may also be different from that of the first upright portion 510.

[0086] The third upright portion 530 extends along the inner side of the inner wall of the processing container 34. The third upright portion 530 is located adjacent to the first upright portion 510 on a different side of the circumference of the processing container 34 than the second upright portion 520. In other words, the third upright portion 530, the first upright portion 510, and the second upright portion 520 are sequentially provided along the circumference of the processing container 34. However, the third upright portion 530 may also be located adjacent to the first upright portion 510 radially in the processing container 34.

[0087] The upper part of the third upright section 530 bends towards the first upright section 510 to form a connecting section 531 that connects to the first upright section 510, and the lower part opens to form an inlet 532 for introducing processing gas. The third upright section 530 is connected to the first upright section 510 at the middle position in the vertical direction. However, the third upright section 530 may also be connected to the first upright section 510 at a position above the middle position in the vertical direction (connecting section 511 side), or at a position below the middle position in the vertical direction (inlet 512 side).

[0088] The third upright portion 530 has the same inner diameter from bottom to top. The inner diameter of the third upright portion 530 is the same as that of the first upright portion 510. However, the inner diameter of the third upright portion 530 may also be different from that of the first upright portion 510.

[0089] In this injector 500, by varying the flow rate ratio of the processing gas introduced into the injector 500 from the inlets 512, 522, and 532, the vertical distribution of the processing gas flow rate and thermal decomposition rate can be adjusted. This allows for adjustment of the inter-surface uniformity of the gas supply to the substrate W.

[0090] For example, by reducing the flow rate ratio of the processing gas introduced into the first upright section 510 from the inlet 512 to the processing gas introduced into the second upright section 520 from the inlet 522, the position with a slower flow rate can be moved from the upper part to the lower part of the first upright section 510. Furthermore, at the position with a slower flow rate, the residence time of the processing gas is longer, thus promoting the thermal decomposition of the processing gas. As a result, the position with a higher thermal decomposition rate can be moved from the upper part to the lower part of the first upright section 510.

[0091] [Analysis Results]

[0092] Reference Figures 6 to 19 This describes the results of a numerical fluid dynamics (CFD) analysis (hereinafter referred to as "CFD analysis") performed to confirm the effectiveness of the injector 76 in the embodiment.

[0093] In the CFD analysis, the changes in the molar fraction of reactive species (SiH2) and the mass flow rate of the feed gas (Si2H6) introduced into the injector from multiple inlets were analyzed. Furthermore, the molar fraction of reactive species (SiH2) was chosen as the subject of analysis because the film thickness deposited on the substrate W is attributed to the concentration of reactive species (SiH2) generated from the thermal decomposition of the feed gas (Si2H6).

[0094] (Analysis A)

[0095] First, the use of Figure 2The injector 200 was configured to vary the flow rate ratio of Si2H6 introduced into the injector 200 from inlets 212 and 222, and to determine the mole fraction of SiH2 and the mass flow rate of Si2H6. In this analysis, the inner diameter of the injector 200 was set to 13.5 mm, the orifice diameter of the gas orifice 213 was set to 0.5 mm, the number of gas orifices 213 was set to 61, and the total flow rate of Si2H6 was set to 500 sccm. Furthermore, the flow rate ratio X / Y of the flow rate X of Si2H6 introduced into the injector 200 from inlet 212 to the flow rate Y of Si2H6 introduced into the injector 200 from inlet 222 was varied as follows.

[0096] X / Y = 450 / 50, 420 / 80, 400 / 100, 300 / 200, 250 / 250, 200 / 300, 100 / 400, 80 / 420, 50 / 450 (where all values ​​are in sccm).

[0097] Figure 6 It means that it was used. Figure 2 A graph showing the analysis results of the mole fraction of SiH2 in the case of an injector 200 (inner diameter: 13.5 mm). Figure 6 In the diagram, the horizontal axis represents the position of the gas pore 213, and the vertical axis represents the mole fraction of SiH2. The position of the gas pore 213 indicates which gas pore it is located in from above the first upright part 210.

[0098] like Figure 6 As shown, it can be seen that the peak position of the mole fraction of SiH2 shifts when the flow ratio X / Y is changed. Specifically, it can be seen that the smaller the flow ratio X / Y, the more the peak position of the mole fraction of SiH2 shifts from the upper part (TOP) to the lower part (BTM) of the injector 200.

[0099] In addition, such as Figure 6 As shown, when the flow rate ratio X / Y is large, the mole fraction of SiH2 at the position above the peak position (TOP side) is higher than the mole fraction of SiH2 at the position below the peak position (BTM side). That is, when the flow rate ratio X / Y is large, the waveform of the mole fraction of SiH2 is not symmetrical.

[0100] Figure 7 It means that it was used. Figure 2 A graph showing the analysis results of the mass flow rate in the case of an injector 200 (inner diameter: 13.5 mm). Figure 7In the diagram, the horizontal axis represents the position of the gas orifice 213, and the vertical axis represents the mass flow rate of Si2H6 [arb.unit]. The position of the gas orifice 213 indicates which gas orifice it is located in from above the first upright portion 210. The mass flow rate of Si2H6 is expressed in arbitrary units to prevent overlap between results of multiple different flow rates X / Y.

[0101] like Figure 7 As shown, even if the flow ratio X / Y is changed, the mass flow rate of Si2H6 hardly changes, but remains approximately constant at all positions in the vertical direction of the injector 200.

[0102] Based on the above explanation Figure 6 and Figure 7 The results show that by using the injector 200 (inner diameter: 13.5 mm), the mass flow rate distribution of Si2H6 in the vertical direction can be kept approximately constant, and the peak position of the thermal decomposition rate of Si2H6 can be shifted in the vertical direction.

[0103] (Analysis B)

[0104] Next, the use of Figure 3 The injector 300 was configured to vary the flow rate ratio of Si2H6 introduced into the injector 300 from inlets 312 and 322, and to determine the mole fraction of SiH2 and the mass flow rate of Si2H6. In this analysis, the inner diameter of the first upright section 310 was set to 13.5 mm, the inner diameter of the second upright section 320 was set to 5.4 mm, the orifice diameter of the gas orifice 313 was set to 0.5 mm, the number of gas orifices 313 was set to 61, and the total flow rate of Si2H6 was set to 500 sccm. Furthermore, the flow rate ratio X / Y of the flow rate X of Si2H6 introduced into the injector 300 from inlet 312 to the flow rate Y of Si2H6 introduced into the injector 300 from inlet 322 was varied as follows.

[0105] X / Y = 490 / 10, 420 / 80, 250 / 250, 80 / 420, 10 / 490 (where all values ​​are in sccm).

[0106] Figure 8 It means that it was used. Figure 3 A graph showing the analytical results of the mole fraction of SiH2 under the condition of injector 300. Figure 8 In the diagram, the horizontal axis represents the position of the gas pore 313, and the vertical axis represents the mole fraction of SiH2. The position of the gas pore 313 indicates which gas pore it is located in from above the first upright portion 310. Furthermore, in... Figure 8 The text also shows the use of... Figure 2 The analysis results of the mole fraction of SiH2 in the case of an injector 200 (inner diameter: 13.5 mm) are compared. Figure 8 In the diagram, the solid line represents the result of injector 300, and the dashed line represents the result of injector 200 (inner diameter: 13.5 mm).

[0107] like Figure 8 As shown, it can be seen that the peak position of the mole fraction of SiH2 shifts when the flow ratio X / Y is changed. Specifically, it can be seen that the smaller the flow ratio X / Y, the more the peak position of the mole fraction of SiH2 shifts from the upper part (TOP) to the lower part (BTM) of the injector 300.

[0108] In addition, such as Figure 8 As shown, when using injector 300, compared with the case of using injector 200, the mole fraction of SiH2 at the position above the peak position (TOP side) is smaller, and the waveform of the mole fraction of SiH2 has symmetry.

[0109] Figure 9 It means that it was used. Figure 3 A graph showing the analysis results of the mass flow rate under the condition of an injector with a capacity of 300. Figure 9 In the diagram, the horizontal axis represents the position of the gas orifice 313, and the vertical axis represents the mass flow rate of Si2H6 [arb.unit]. The position of the gas orifice 313 indicates which gas orifice it is located on, starting from above the first upright portion 310.

[0110] like Figure 9 As shown, even if the flow ratio X / Y is changed, the mass flow rate of Si2H6 hardly changes, but remains approximately constant at all positions in the vertical direction of the injector 300.

[0111] Based on the above explanation Figure 8 and Figure 9 The results show that by using the injector 300, the mass flow rate distribution of Si2H6 in the vertical direction can be kept approximately constant, and the peak position of the thermal decomposition rate of Si2H6 can be shifted in the vertical direction.

[0112] Furthermore, it is shown that by making the inner diameter of the upright portion (second upright portion 320) on the side without the gas hole 313 smaller than the inner diameter of the upright portion (first upright portion 310) on the side with the gas hole 313, the waveform of the mole fraction of SiH2 can be made symmetrical.

[0113] (Analysis C)

[0114] Next, the use of Figure 2 The injector 200 was configured to vary the flow rate ratio of Si2H6 introduced into the injector 200 from inlets 212 and 222, and the mole fraction of SiH2 and the mass flow rate of Si2H6 were determined. In this analysis, the inner diameter of the injector 200 was set to 5.4 mm, the orifice diameter of the gas orifice 213 was set to 0.5 mm, the number of gas orifices 213 was set to 61, and the total flow rate of Si2H6 was set to 500 sccm. Furthermore, the flow rate ratio X / Y of the Si2H6 flow rate X introduced into the injector 200 from inlet 212 to inlet 222 was varied as follows.

[0115] X / Y = 490 / 10, 400 / 100, 300 / 200, 250 / 250, 200 / 300, 100 / 400, 10 / 490 (where all values ​​are in sccm).

[0116] Figure 10 It means that it was used. Figure 2 A graph showing the analysis results of the mole fraction of SiH2 in the case of an injector 200 (inner diameter: 5.4 mm). Figure 10 In the diagram, the horizontal axis represents the position of the gas pore 213, and the vertical axis represents the mole fraction of SiH2. The position of the gas pore 213 indicates which gas pore it is located in from above the first upright portion 210. Furthermore, in... Figure 10 The text also shows the use of [something] in the middle. Figure 2 The analysis results of the mole fraction of SiH2 in the case of an injector 200 (inner diameter: 13.5 mm) are compared. Figure 10 In the figure, the solid line represents the result of injector 200 (inner diameter: 5.4 mm), and the dashed line represents the result of injector 200 (inner diameter: 13.5 mm).

[0117] like Figure 10 As shown, it can be seen that the peak position of the mole fraction of SiH2 shifts when the flow ratio X / Y is changed. Specifically, it can be seen that the smaller the flow ratio X / Y, the more the peak position of the mole fraction of SiH2 shifts from the upper part (TOP) to the lower part (BTM) of the injector 200.

[0118] In addition, such as Figure 10As shown, compared to the case where injector 200 (inner diameter: 13.5 mm) is used, the overall molar fraction of SiH2 is smaller when injector 200 (inner diameter: 5.4 mm) is used. That is, compared to the case where injector 200 (inner diameter: 13.5 mm) is used, the thermal decomposition rate of Si2H6 is suppressed to a lower level when injector 200 (inner diameter: 5.4 mm) is used.

[0119] Figure 11 It means that it was used. Figure 2 A graph showing the analysis results of the mass flow rate in the case of an injector 200 (inner diameter: 5.4 mm). Figure 11 In the diagram, the horizontal axis represents the position of the gas orifice 213, and the vertical axis represents the mass flow rate of Si2H6 [sccm]. The position of the gas orifice 213 indicates which gas orifice it is located in from above the first upright part 210.

[0120] like Figure 11 As shown, the distribution of Si2H6 mass flow rate varies considerably when the flow rate ratio X / Y is changed. Specifically, when the flow rate ratio X / Y is greater than 1, a distribution is shown where the mass flow rate of Si2H6 increases as it moves from the upper part (TOP) to the lower part (BTM) of the injector 200. Conversely, when the flow rate ratio X / Y is less than 1, a distribution is shown where the mass flow rate of Si2H6 decreases as it moves from the upper part (TOP) to the lower part (BTM) of the injector 200. Furthermore, when the flow rate ratio X / Y is 1, a concave distribution is shown where the mass flow rate of Si2H6 at the location of the centrally located gas orifice 213 in the vertical direction is very small.

[0121] Based on the above explanation Figure 10 and Figure 11 The results show that by reducing the inner diameter of the injector 200, the thermal decomposition rate of Si2H6 can be suppressed to a lower level, and the rate of change of the mass flow rate distribution of Si2H6 in the vertical direction can be increased when the flow rate ratio X / Y is varied.

[0122] (Analysis D)

[0123] Next, the use of Figure 4The injector 400 is configured to vary the flow rate ratio of Si2H6 introduced into the injector 400 from inlets 412 and 422, and to determine the mole fraction of SiH2 and the mass flow rate of Si2H6. In this analysis, the inner diameter of the injector 400 is set to 5.4 mm, the orifice diameter of the gas orifice 413 is set to 0.5 mm, and the total flow rate of Si2H6 is set to 500 sccm. Furthermore, the number of gas orifices 413 in the first upright section 410 is set to 31, and the number of gas orifices 423 in the second upright section 420 is set to 30. The flow rate ratio X / Y of the Si2H6 flow rate X introduced into the injector 400 from inlet 412 to the Si2H6 flow rate Y introduced into the injector 400 from inlet 422 is varied as follows.

[0124] X / Y = 490 / 10, 250 / 250, 10 / 490 (where all values ​​are in sccm).

[0125] Figure 12 It means that it was used. Figure 4 A graph showing the analytical results of the mole fraction of SiH2 under the condition of an injector with a pressure of 400. Figure 12 In the diagram, the horizontal axis represents the position of gas holes 413 and 423, and the vertical axis represents the mole fraction of SiH2. The positions of gas holes 413 and 423 indicate which gas hole is located above the first upright portion 410 and the second upright portion 420. For example, "1" indicates the position of gas hole 413 located at the top of the first upright portion 410, and "2" indicates the position of gas hole 423 located at the top of the second upright portion 420.

[0126] like Figure 12 As shown, the overall mole fraction of SiH2 is relatively small. That is, the overall thermal decomposition rate of Si2H6 is suppressed to a low level. This is likely because the inner diameter of the injector 400 is relatively small, at 5.4 mm.

[0127] Figure 13 It means that it was used. Figure 4 A graph showing the analysis results of the mass flow rate under the condition of an injector with a capacity of 400. Figure 13In the diagram, the horizontal axis represents the position of gas holes 413 and 423, and the vertical axis represents the mass flow rate of Si2H6 [sccm]. The positions of gas holes 413 and 423 indicate which gas hole is located above the first upright portion 410 and the second upright portion 420. For example, "1" indicates the position of gas hole 413 located at the top of the first upright portion 410, and "2" indicates the position of gas hole 423 located at the top of the second upright portion 420.

[0128] like Figure 13 As shown, the distribution of mass flow rate of Si2H6 changes significantly when the flow rate ratio X / Y is varied.

[0129] Based on the above explanation Figure 12 and Figure 13 The results show that by using injector 400, the mass flow distribution of Si2H6 in the vertical direction can be changed when the flow ratio X / Y is changed.

[0130] (Analysis E)

[0131] Next, the use of Figure 3 The injector 300 was used to add N2 to Si2H6 introduced into the injector 300 through inlets 312 and 322, and the mole fraction of SiH2 was determined. In this analysis, the inner diameter of the first upright section 310 was set to 13.5 mm, the inner diameter of the second upright section 320 was set to 5.4 mm, the diameter of the gas orifice 313 was set to 0.5 mm, the number of gas orifices 313 was set to 61, and the total flow rate of Si2H6 was set to 500 sccm. Furthermore, the flow rate ratio X / Y of the Si2H6 flow rate X introduced into the injector 300 through inlet 312 and the Si2H6 flow rate Y introduced into the injector 300 through inlet 322 was set as follows.

[0132] X / Y = 490 / 10, 10 / 490 (where all values ​​are in sccm).

[0133] In addition, N2 is supplied as an additive gas through inlets 312 and 322, where the flow rates of Si2H6 in flow rates X and Y are relatively low. The amount of N2 added is as described below.

[0134] N2 = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5 (where all values ​​are in sccm).

[0135] Figure 14 It means that it was used. Figure 3 A graph showing the analytical results of the mole fraction of SiH2 under the condition of injector 300. Figure 14 The diagram shows the results when the flow ratio X / Y is set to 490 / 10 and N2 is supplied from inlet 322. Figure 14 In the diagram, the horizontal axis represents the position of the gas hole 313, and the vertical axis represents the mole fraction of SiH2. The position of the gas hole 313 indicates which gas hole it is located in from above the first upright part 310.

[0136] like Figure 14 As shown, the peak height of the SiH2 mole fraction changes with the amount of N2 added. Specifically, it can be seen that the more N2 is added, the smaller the peak height of the SiH2 mole fraction becomes.

[0137] Figure 15 It means that it was used. Figure 3 A graph showing the analytical results of the mole fraction of SiH2 under the condition of injector 300. Figure 15 The diagram shows the results when the flow ratio X / Y is set to 10 / 490 and N2 is supplied from inlet 312. Figure 15 In the diagram, the horizontal axis represents the position of the gas hole 313, and the vertical axis represents the mole fraction of SiH2. The position of the gas hole 313 indicates which gas hole it is located in from above the first upright part 310.

[0138] like Figure 15 As shown, the peak height of the SiH2 mole fraction changes with the amount of N2 added. Specifically, it can be seen that the more N2 is added, the smaller the peak height of the SiH2 mole fraction becomes.

[0139] Based on the above explanation Figure 14 and Figure 15 The results show that when the difference between flow rate X and flow rate Y is large, introducing N2 into the injector 300 through inlets 312 and 322, which have a lower flow rate of Si2H6, can suppress the peak height of the mole fraction of Si2H6. That is, it shows that when the difference between flow rate X and flow rate Y is large, introducing N2 into the injector 300 through inlets 312 and 322, which have a lower flow rate of Si2H6, can prevent the thermal decomposition rate of Si2H6 from becoming very high at its peak.

[0140] (Analysis F)

[0141] Next, the use of Figure 2The total flow rate of Si2H6 introduced into the injector 200 from inlets 212 and 222 varies, and the mole fraction of SiH2 is determined. In this analysis, the inner diameter of the injector 200 is set to 5.4 mm, the orifice diameter of the gas orifice 213 is set to 0.5 mm, the number of gas orifices 213 is set to 61, and the total flow rate of Si2H6 is set to 700 sccm, 300 sccm, and 100 sccm. Furthermore, the flow rate ratio X / Y of the flow rate X of Si2H6 introduced into the injector 200 from inlet 212 to the flow rate Y of Si2H6 introduced into the injector 200 from inlet 222 is set as follows.

[0142] X / Y = 630 / 70, 350 / 350, 70 / 630 (where all values ​​are in sccm).

[0143] X / Y = 270 / 30, 150 / 150, 30 / 270 (where all values ​​are in sccm).

[0144] X / Y = 90 / 10, 50 / 50, 10 / 90 (where all values ​​are in sccm).

[0145] Figures 16-18 This is a graph showing the analytical results of the mole fraction of SiH2 when the total Si2H6 flow rate was changed. Figure 16 , Figure 17 as well as Figure 18 The results are shown below for total Si₂H₆ flow rates of 700 sccm, 300 sccm, and 100 sccm, respectively. Figures 16-18 In the diagram, the horizontal axis represents the position of the gas pore 213, and the vertical axis represents the mole fraction of SiH2. The position of the gas pore 213 indicates which gas pore it is located in from above the first upright part 210.

[0146] like Figures 16-18 As shown, when the total flow rate of Si2H6 is any of 700 sccm, 300 sccm, or 100 sccm, the peak position of the mole fraction of SiH2 tends to shift in the same way when the flow ratio X / Y is changed. Specifically, it can be seen that the smaller the flow ratio X / Y, the more the peak position of the mole fraction of SiH2 shifts from the top (TOP) to the bottom (BTM) of the injector 200.

[0147] Based on the above explanation Figures 16-18 The results show that it is robust with respect to total flow.

[0148] (Analysis G)

[0149] Next, the use of Figure 2 The mole fraction of SiH2 when the injector 200 and the orifice diameter of the gas orifice 213 are changed. In this analysis, the inner diameter of the injector 200 is set to 5.4 mm, the orifice diameter of the gas orifice 213 is set to 0.7 mm and 0.5 mm, the number of gas orifices 213 is set to 61, and the total flow rate of Si2H6 is set to 500 sccm. In addition, the flow rate ratio X / Y of Si2H6 introduced into the injector 200 from the inlet 212 to the flow rate Y of Si2H6 introduced into the injector 200 from the inlet 222 is set as follows.

[0150] X / Y = 450 / 50, 250 / 250, 50 / 450 (where all values ​​are in sccm).

[0151] Figure 19 This is a graph showing the analytical results of the mole fraction of SiH2 after changing the pore size of the gas pores. Figure 19 In the diagram, the horizontal axis represents the position of the gas hole 213, and the vertical axis represents the mole fraction of SiH2. The position of the gas hole 213 indicates which gas hole it is located in from above the first upright part 210.

[0152] like Figure 19 As shown, when the orifice diameter of the gas orifice is either 0.7 mm or 0.5 mm, the peak position of the mole fraction of SiH2 tends to shift in the same way when the flow ratio X / Y is changed. Specifically, it can be seen that the smaller the flow ratio X / Y is, the more the peak position of the mole fraction of SiH2 shifts from the upper part (TOP) to the lower part (BTM) of the injector 200.

[0153] Based on the above explanation Figure 19 The results show that it has robustness with respect to the pore size of the gas pore.

[0154] Furthermore, in the above embodiments, inlet ports 212, 312, 412, and 512 are examples of the first inlet port, inlet ports 222, 322, 422, and 522 are examples of the second inlet port, and inlet port 532 is an example of the third inlet port.

[0155] It should be considered that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The above embodiments may also be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

Claims

1. A processing apparatus, wherein, The processing device includes: The processing container has a generally cylindrical shape; An injector, which extends along the inner side of the inner wall of the processing container in the longitudinal direction, has the following characteristics: A first upright portion and a second upright portion are provided extending along the inner side of the inner wall of the processing container in the length direction and connected to each other at the top. Multiple inlets for introducing the processing gas, including a first inlet located at the lower part of the first upright section and a second inlet located at the lower part of the second upright section, and The processing gas introduced from the plurality of inlets is ejected into the processing container through a plurality of gas holes; and The control unit changes the flow rate ratio of the processing gas introduced from the first inlet into the first upright section to the processing gas introduced from the second inlet into the second upright section.

2. The processing apparatus according to claim 1, wherein, The plurality of gas holes are provided in either the first upright part or the second upright part.

3. The processing apparatus according to claim 1 or 2, wherein, The plurality of gas holes are provided in the first upright part. The inner diameter of the second upright part is smaller than the inner diameter of the first upright part.

4. The processing apparatus according to claim 1 or 2, wherein, The injector includes a third upright section, which is connected midway to the first upright section. The plurality of inlets includes a third inlet located at the lower part of the third upright portion.

5. The processing apparatus according to claim 1, wherein, The plurality of gas holes are provided in the first upright part and the second upright part.

6. The processing apparatus according to claim 1 or 2, wherein, The processing container holds multiple substrates substantially horizontally with spacing along the length direction.

7. The processing apparatus according to claim 1 or 2, wherein, The multiple inlets are connected to the same processing gas supply source.

8. The processing apparatus according to claim 7, wherein, The processing gas contains a raw material gas used to deposit films on multiple substrates housed in the processing container.

9. The processing apparatus according to claim 7, wherein, The processing gas contains inactive gases.

10. The processing apparatus according to claim 1 or 2, wherein, The control unit changes the flow rate ratio midway through the film deposition process of the multiple substrates deposited in the processing container.

11. A processing method in which a processing apparatus processes a substrate. The processing device includes: Processing container, which has a generally cylindrical shape; and An injector, which extends along the inner side of the inner wall of the processing container in the longitudinal direction, has the following characteristics: A first upright portion and a second upright portion are provided extending along the inner side of the inner wall of the processing container in the length direction and connected to each other at the top. Multiple inlets for introducing the processing gas, including a first inlet located at the lower part of the first upright section and a second inlet located at the lower part of the second upright section, and The processing gas introduced from the plurality of inlets is ejected into the processing container through a plurality of gas holes, wherein... During the processing of the substrate, the flow rate ratio of the processing gas introduced from the first inlet into the first upright portion to the processing gas introduced from the second inlet into the second upright portion is changed.

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