Method for suppressing warping of a material by increasing gas density

Abstract

The present invention discloses a method for suppressing the warping of materials by increasing the gas density, and its steps mainly include: (a) placing a plurality of semiconductor components into a processing chamber; (b) raising the temperature in the processing chamber to a first predetermined temperature, and at the same time inputting gas to raise the pressure to a predetermined pressure, so that the processing chamber is shrouded in a high-temperature and high-pressure working environment. Under the state of the first predetermined temperature and the predetermined pressure, an isothermal and isobaric treatment process is carried out to improve the uniformity of the temperature distribution through high-pressure gas; (c) lowering the temperature in the processing chamber from the first predetermined temperature to a second predetermined temperature, and at the same time continuing to input gas into the processing chamber to keep the processing chamber at the predetermined pressure, and performing a cooling and isobaric treatment process on each semiconductor component, thereby being able to suppress the warping of each semiconductor component.

Description

Technical Field

[0001] The present invention relates to a method for suppressing material warping by increasing gas density. On the one hand, the uniformity of gas temperature distribution is improved by increasing the number of gas molecules in a processing chamber. On the other hand, a predetermined pressure is maintained in the processing chamber to avoid stress and vibration caused by pressure difference between the inside and outside of semiconductor components at high temperatures, thereby effectively suppressing the warping of semiconductor components. The invention belongs to the technical field of electronic packaging. Background Art

[0002] In recent years, electronic technology has been changing with each passing day. Electronic products that use wafers as substrate materials have become an indispensable tool in modern people's daily lives. As electronic products move towards the trend of light, thin, short and small designs, the requirements for the precision of semiconductor components such as wafers are becoming increasingly stringent. However, when the wafer undergoes high-temperature and high-pressure related processing in the processing chamber, the temperature distribution in the processing chamber is often poorly uniform, causing different thermal expansion or thermal contraction of different parts of the wafer with temperature changes. In addition, when the pressure of the high-pressure gas in the processing chamber changes, the pressure difference will cause stress and vibration in the various layers of the wafer, causing the wafer to generate thermal stress due to the temperature difference in various parts, and combined with the change in gas pressure, the pressure difference between the various layers of the wafer will cause stress and vibration, resulting in warpage. Moreover, when the temperature uniformity in the processing chamber is worse and the gas pressure change is greater, the warpage of the wafer will be greater, which seriously affects the production quality of the wafer and increases the production cost. It is necessary to improve it.

[0003] Therefore, in view of the problem of warping of semiconductor components such as wafers in the above-mentioned prior art due to thermal stress, pressure difference and vibration, how to develop a more ideal, practical and economical method to suppress material warping has become the goal and direction of active research and development breakthroughs for related industries.

[0004] In view of this, the inventor, based on his many years of experience in manufacturing, developing and designing related products, has designed and carefully evaluated the above-mentioned goals and finally obtained the present invention which is truly practical. Summary of the invention

[0005] The technical problem to be solved by the present invention is that when the existing wafer is subjected to high temperature and high pressure related processing in the processing chamber, the temperature distribution in the processing chamber is often poorly uniform, resulting in thermal stress generated by the temperature difference between different parts of the wafer, and combined with the change in gas pressure, the pressure difference between the layers of the wafer causes stress and vibration, resulting in warping, which seriously affects the reliability and quality of the product. It is indeed necessary to improve it.

[0006] To solve the above technical problems, the present invention provides a method for suppressing the warping of materials by increasing the gas density, and the steps thereof include:

[0007] (a) Placing a plurality of semiconductor components into a processing chamber;

[0008] (b) Raising the temperature in the processing chamber from an initial temperature to a first predetermined temperature, and simultaneously inputting at least one gas into the processing chamber, so that the pressure in the processing chamber rises from an initial pressure to a predetermined pressure, and the processing chamber is shrouded in a high-temperature and high-pressure working environment. Under the state of the first predetermined temperature and the predetermined pressure, an isothermal and isobaric treatment process is performed on each of the semiconductor components for a predetermined time, and the uniformity of the gas temperature distribution in the processing chamber is effectively improved by the high-pressure gas. The initial temperature in the processing chamber is room temperature, and the initial pressure is atmospheric pressure (1 atm);

[0009] (c) Lowering the temperature in the processing chamber from the first predetermined temperature to a second predetermined temperature at a predetermined rate, and simultaneously continuing to input at least one of the gases into the processing chamber, so that the processing chamber is maintained at the predetermined pressure. After a predetermined time, a temperature-lowering and isobaric treatment process is performed on each of the semiconductor components. By increasing the number of gas molecules in the processing chamber, the processing chamber is maintained at the predetermined pressure. The increased gas molecules in the processing chamber contribute to improving the uniformity of the gas temperature distribution. In addition, the processing chamber is maintained at the predetermined pressure (maintaining an isobaric state), which can reduce the stress and vibration phenomena generated between the layers of materials of each of the semiconductor components due to the pressure difference. Generally speaking, the warping of the semiconductor components can be effectively suppressed. Finally, the temperature in the processing chamber is returned from the second predetermined temperature to the initial temperature, and the pressure is returned from the predetermined pressure to the initial pressure to complete a set processing process.

[0010] Preferably, at least one of the gases is air and / or nitrogen.

[0011] Preferably, in step (b), at least one of the gases has a predetermined number of gas molecules, and the predetermined number of gas molecules keeps the processing chamber at the predetermined pressure, and the uniformity of the gas temperature distribution in the processing chamber can be more accurately controlled by the predetermined number of gas molecules.

[0012] Preferably, the first predetermined temperature is set in the range of 60°C to 1500°C.

[0013] Preferably, the second predetermined temperature is set in the range greater than 25°C and equal to 100°C, and the second predetermined temperature is less than the first predetermined temperature.

[0014] Preferably, the preset pressure is set in the range greater than 1.3 atmospheres (atm) to less than 100 atmospheres (atm).

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0016] By increasing the number of gas molecules in the processing chamber, the present invention effectively improves the uniformity of the gas temperature distribution in the processing chamber; the uniformity of the gas temperature distribution in the processing chamber can be more precisely controlled by the predetermined number of gas molecules; on the one hand, by increasing the number of gas molecules in the processing chamber, the uniformity of the gas temperature distribution is improved, and on the other hand, the processing chamber is maintained at the predetermined pressure (maintaining an isobaric state), which can avoid stress and vibration phenomena caused by pressure differences between layers of materials of each semiconductor component, and effectively achieve the effect of suppressing warping of each semiconductor component. Description of the Drawings

[0017] Figure 1 It is a flowchart of a method for suppressing material warping by increasing gas density in an embodiment of the present invention.

[0018] Figure 2 It is a diagram showing the change relationship among temperature, pressure and time during the processing in an embodiment of the present invention.

[0019] Symbol Explanation:

[0020] Step 201

[0021] Step 202

[0022] Step 203 Detailed Description of the Invention

[0023] The present invention will be further described below in conjunction with specific embodiments, and the advantages and features of the present invention will become clearer as the description progresses. However, these embodiments are exemplary only and do not constitute any limitation to the scope of the present invention. Those skilled in the art should understand that modifications or substitutions can be made to the details and forms of the technical solutions of the present invention without departing from the spirit and scope of the present invention, but these modifications and substitutions all fall within the protection scope of the present invention.

[0024] Referring to Figures 1 to 2 As shown, the present invention provides a method for suppressing material warping by increasing gas density, and its steps include:

[0025] (a) (Step 201) Placing a plurality of semiconductor components into a processing chamber;

[0026] (b) (Step 202) Raise the temperature in the processing chamber from an initial temperature to a first predetermined temperature, and at the same time input at least one gas into the processing chamber to raise the pressure in the processing chamber from an initial pressure to a predetermined pressure, so that the processing chamber is shrouded in a high-temperature and high-pressure working environment. Under the state of the first predetermined temperature and the predetermined pressure, perform an isothermal and isobaric treatment process on each of the semiconductor components for a predetermined time. Since high-pressure gas has a higher gas density, it means there are more gas molecules. Since each gas molecule is a carrier of heat transfer and the heat conduction ability of each gas is certain, if the number of gas molecules can be increased in a fixed space (the processing chamber), the uniformity of the gas temperature distribution in the processing chamber can be improved (in other words, the uniformity of the gas temperature distribution in the processing chamber can be effectively improved through high-pressure gas). The initial temperature in the processing chamber is room temperature, the first predetermined temperature is set in the range of 60°C to 1500°C, the initial pressure is atmospheric pressure (1 atm), and the predetermined pressure is set in the range greater than 1.3 atmospheres (atm) and less than 100 atmospheres (atm).

[0027] (c) (Step 203) Lower the temperature in the processing chamber from the first predetermined temperature at at least one predetermined rate to a second predetermined temperature, and at the same time continue to input at least one of the gases into the processing chamber to keep the processing chamber at the predetermined pressure. Perform a temperature-lowering and isobaric treatment process on each of the semiconductor components for a predetermined time. From the ideal gas state equation P = ρRT (P represents gas pressure, ρ represents gas density, R represents the gas constant, T represents gas temperature) or PV = NMRT (P represents gas pressure, V represents gas volume, N represents the number of gas molecules, M represents the molecular weight of the gas, R represents the gas constant, T represents gas temperature), it can be known that since R, V, and M are all fixed values, when the temperature decreases, gas must be input into the processing chamber to keep the processing chamber at the predetermined pressure (in other words, by increasing the number of gas molecules in the processing chamber, the processing chamber is kept at the predetermined pressure). The increased gas molecules in the processing chamber help to improve the uniformity of the gas temperature distribution. In addition, keeping the processing chamber at the predetermined pressure (maintaining an isobaric state) can reduce the stress and vibration phenomena generated between the layers of materials of each semiconductor component due to the pressure difference. Overall, it can effectively inhibit the warping of the semiconductor components. Finally, return the temperature in the processing chamber from the second predetermined temperature to the initial temperature, and at the same time return the pressure from the predetermined pressure to the initial pressure to complete a set processing process. The second predetermined temperature is set in the range greater than 25°C and equal to 100°C, and the second predetermined temperature is less than the first predetermined temperature.

[0028] Wherein, at least one of the gases is air and / or nitrogen.

[0029] Among them, in step 202, at least one of the gases has a predetermined number of gas molecules, and the predetermined number of gas molecules keeps the processing chamber at the predetermined pressure. Through the predetermined number of gas molecules, the uniformity of the gas temperature distribution in the processing chamber can be more precisely controlled.

[0030] Refer to Figure 2 As shown, in an embodiment of the present invention, a set processing process lasts for 145 minutes. The temperature in a processing chamber rises from an initial temperature (25 °C) to a first predetermined temperature (160 °C) and remains at 160 °C for a predetermined time (60 minutes); then, after a predetermined time (30 minutes), it drops from the first predetermined temperature (160 °C) to a second predetermined temperature (60 °C) at a predetermined rate (3.3 °C / min), and finally drops from the second predetermined temperature (60 °C) to the initial temperature (25 °C). At the same time, the pressure in the processing chamber rises from an initial pressure (1 atm) to a predetermined pressure (6 atm) and remains at the predetermined pressure for a predetermined time (125 minutes), and finally drops from the predetermined pressure (6 atm) to the initial pressure (1 atm). The above changes in temperature, pressure, and time can all be adjusted as necessary according to the requirements of the processing process.

[0031] Among them, in this embodiment, the size specifications of the processing chamber are: diameter 600 mm, length 530 mm.

[0032] Among them, in the isothermal and isobaric processing process (60 minutes) of this embodiment, when the first predetermined temperature is 160 °C and the predetermined pressure is 6 atm, the average temperature uniformity of the gas temperature distribution is within ±3 °C.

[0033] Among them, in the cooling and isobaric processing process (30 minutes) of this embodiment, when the first predetermined temperature is 160 °C, the second predetermined temperature is 60 °C, and the predetermined pressure is 6 atm, the average temperature uniformity of the gas temperature distribution is within ±5 °C.

[0034] In the method for suppressing material warping by increasing gas density according to the present invention, in step 202, the processing chamber is shrouded in a high-temperature and high-pressure working environment. By increasing the number of gas molecules in the processing chamber, the uniformity of the gas temperature distribution in the processing chamber is effectively improved.

[0035] In the method for suppressing material warping by increasing gas density according to the present invention, in step 202, the uniformity of the gas temperature distribution in the processing chamber can be more precisely controlled through the predetermined number of gas molecules.

[0036] The method for suppressing the warping of a material by increasing the gas density according to the present invention continues to input gas into the processing chamber in step 203 to maintain the processing chamber at the predetermined pressure. On the one hand, by increasing the number of gas molecules in the processing chamber, the uniformity of the gas temperature distribution is improved. On the other hand, maintaining the processing chamber at the predetermined pressure (maintaining an isobaric state) can avoid stress and vibration phenomena caused by pressure differences between the layers of materials of each semiconductor component. The above effects are superimposed to effectively achieve the effect of suppressing the warping of the semiconductor component.

Claims

1. A method for suppressing warping of a material by increasing gas density, characterized in that The steps include: (a) Placing a plurality of semiconductor components into a processing chamber; (b) Raising the temperature in the processing chamber to a first predetermined temperature, while introducing at least one gas into the processing chamber to raise the pressure in the processing chamber to a predetermined pressure, so that the processing chamber is shrouded in a high-temperature and high-pressure working environment. Under the state of the first predetermined temperature and the predetermined pressure, an isothermal and isobaric treatment process is performed on each of the semiconductor components, and the uniformity of the gas temperature distribution in the processing chamber is improved by the high-pressure gas; (c) Lowering the temperature in the processing chamber from the first predetermined temperature to a second predetermined temperature at at least one predetermined rate, while continuing to introduce at least one of the gases into the processing chamber to maintain the processing chamber at the predetermined pressure, and performing a temperature-lowering and isobaric treatment process on each of the semiconductor components. By improving the uniformity of the gas temperature distribution and reducing the stress and vibration phenomena generated between the layers of materials of each of the semiconductor components due to the pressure difference, the warping of each of the semiconductor components can be suppressed.

2. The method for suppressing warping of a material by increasing gas density according to claim 1, characterized in that, At least one of the gases is air and / or nitrogen.

3. The method for suppressing warping of a material by increasing gas density according to claim 1, characterized in that, In step (b), at least one of the gases has a predetermined number of gas molecules, and the predetermined number of gas molecules keeps the processing chamber at the predetermined pressure, and controls the uniformity of the gas temperature distribution in the processing chamber through the predetermined number of gas molecules.

4. The method for suppressing warping of a material by increasing gas density as claimed in claim 1, wherein The setting of the first predetermined temperature in the processing chamber ranges from 60°C to 1500°C.

5. The method for suppressing warping of a material by increasing gas density according to claim 1, characterized in that The setting of the second predetermined temperature in the processing chamber ranges from greater than 25°C to equal to 100°C, and the second predetermined temperature is less than the first predetermined temperature.

6. The method for suppressing warping of a material by increasing gas density as claimed in claim 1, wherein The setting of the predetermined pressure in the processing chamber ranges from greater than 1.3 atmospheres to less than 100 atmospheres.

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