Sputtering deposition equipment and method

Abstract

Certain examples described herein relate to a sputter deposition apparatus that includes a substrate holding device, a target loading device, a plasma source for generating a plasma, and a magnet arrangement. The substrate holding device is configured to position a substrate in a sputter deposition zone for sputter depositing target material from a first target onto the substrate in use. The target loading device is configured to move a second target from a target activation zone to the sputter deposition zone for sputter depositing target material from the second target onto the substrate in use. The magnet arrangement is configured to confine the plasma within the apparatus to the target activation zone and the sputter deposition zone. Within the target activation zone, the respective target is exposed to the plasma in use. The sputter deposition zone provides for sputter deposition of the target material.

Description

Technical Field

[0001] The present invention relates to deposition, and more particularly (although not exclusively) to sputter depositing a target material onto a substrate. Background Art

[0002] Deposition is a process by which a target material is deposited onto a substrate. An example of deposition is thin film deposition, in which a thin layer (typically from about nanometers or even fractions of a nanometer to several micrometers or even tens of micrometers) is deposited onto a substrate such as a silicon wafer or web. Example techniques of thin film deposition are physical vapor deposition (PVD), in which a target material in a condensed phase is vaporized to produce a vapor which is then condensed onto the substrate surface. An example of PVD is sputter deposition, in which particles are ejected from the target due to being bombarded by high energy particles such as ions. In an example of sputter deposition, the sputter gas may be an inert gas such as argon, which is introduced into a vacuum chamber at low pressure and the sputter gas is ionized using high energy electrons to produce a plasma. Bombardment of the target by the ions of the plasma ejects the target material which can then be deposited onto the substrate surface. Sputter deposition has advantages over other thin film deposition methods such as evaporation in that the target material can be deposited without the need to heat the target material, which can in turn reduce or prevent thermal damage to the substrate. Summary of the Invention

[0003] According to a first aspect of the present invention, there is provided a sputter deposition apparatus comprising:

[0004] a substrate holding device for positioning a substrate in a sputter deposition zone for sputter depositing a target material from a first target onto the substrate in use;

[0005] a target loading device for moving a second target from a target priming zone into the sputter deposition zone so as to sputter deposit a target material from the second target onto the substrate in use;

[0006] a plasma source for generating a plasma;

[0007] a magnet arrangement configured to confine the plasma within the apparatus:

[0008] a target priming zone in which a corresponding target is exposed to the plasma in use; and a sputter deposition zone for sputter deposition of the target material.

[0009] Confining the generated plasma to the target initiation zone and the sputter deposition zone in this way allows for a more efficient use of the generated plasma. Further, a more energy-efficient sputter deposition process can be obtained compared to known devices and processes. For example, performing sputter deposition using the present device can mean that the target can be initiated by the generated plasma before being installed in the deposition zone. Thus, this can reduce the delay during the sputter deposition process, which would otherwise be caused by replacing and then initiating a new target in the deposition zone. Given the control provided by the magnet arrangement that confines the plasma, the present device can also offer improved space efficiency compared to known sputter deposition devices that use, for example, separate plasma sources.

[0010] In some examples, the target loading device is arranged to move a second target into the sputter deposition zone to replace the first target. Thus, a new target can replace the "used" target in situ, for example, when more than a predetermined amount of target material has been sputtered from it.

[0011] In some examples, the target loading device is arranged to move a second target into the sputter deposition zone for sputter depositing target material from the first target and the second target onto a substrate during use. Thus, multiple targets can be located in the sputter deposition zone for sputter depositing target material. Different targets can include different target materials, for example, such that a mixture of target materials can be sputtered and deposited onto the substrate.

[0012] In some examples, the target loading device is arranged to move the first target out of the sputter deposition zone when moving the second target into the sputter deposition zone. Thus, the first target can be completely replaced in situ by the second target entering the sputter deposition zone. In other examples mentioned above, for example, the first target can remain in the deposition zone after the second target has been moved into the deposition zone. In some cases, for example, after moving the first target out of the sputter deposition zone and moving the second target into the sputter deposition zone, the target loading device is arranged to remove the second target from the sputter deposition zone and return the first target to the sputter deposition zone. In this way, different target materials can be alternately deposited onto the substrate, for example, by alternately the targets in the sputter deposition zone.

[0013] In some cases, the target loading device is arranged to move a third target out of the sputter deposition zone when moving the second target into the sputter deposition zone. In this way, the target loading device can position more than one target (e.g., the first target and the second target) in the deposition zone while removing another potentially used target (e.g., the third target).

[0014] In some examples, the magnet arrangement is configured to confine the plasma within the target initiation zone to interact with at least a portion of the surface of the corresponding target during use. This interaction can provide treatment of the surface of the target before the target enters the sputter deposition zone, which can improve the deposition of target material onto the substrate during deposition.

[0015] In some examples, in use, within a target initiation zone, a plasma interacts with a corresponding target during an ablation process. Target ablation can allow for an increase in the homogeneity and / or roughness of the target surface prior to deposition. This can improve the uniformity and / or control of the crystallinity of depositing the target material onto a substrate during a sputter deposition process.

[0016] In an example, the sputter deposition zone includes a sputter deposition chamber. In an example, the target initiation zone includes a target initiation chamber. The target initiation chamber can be under at least partial vacuum in use.

[0017] In some examples, the target loading device includes a target transporter to transport a second target between the target initiation zone and the sputter deposition zone in a first transport direction. The substrate holding device can be arranged to guide a substrate through the sputter deposition zone in a second transport direction.

[0018] In an example, the first transport direction and the second transport direction are substantially parallel to each other, substantially orthogonal to each other, or the first transport direction can be rotational.

[0019] In an example, the target loading device is configured to move the second target into the sputter deposition zone after the second target has been in the target initiation zone for at least a predetermined amount of time. This can allow for a corresponding predetermined amount of initiation of the target, such as an amount of surface ablation.

[0020] In an example, the apparatus includes means having a sensor to detect the surface homogeneity of the second target. The target loading device can be configured to move the second target into the sputter deposition zone based on sensor data output by the sensor. This can allow a target having at least a predetermined level of surface homogeneity to enter the sputter deposition zone, which can in turn improve the uniformity and / or control of the crystallinity of the target material deposited onto a substrate during the sputter deposition process.

[0021] In an example, the substrate holding device includes a bending member. The bending member can include rollers.

[0022] In an example, the magnet arrangement is configured to confine the plasma in the form of a sheet.

[0023] In an example, the magnet arrangement includes one or more magnetic elements. The apparatus can include a magnetic controller to control the magnetic field strength of the one or more magnetic elements. This can allow for adjustment of the plasma density at the substrate and / or the target material within the deposition zone, and thus allow for improved control of sputter deposition. This can in turn allow for improved flexibility in the operation of the sputter deposition apparatus. Additionally, the ability to control the magnetic field strength can similarly allow for adjustment of the plasma density at the substrate within the target initiation zone. This can in turn allow for improved control of the target initiation process and increased flexibility in the operation of the sputter deposition apparatus, which means that different types of substrates and / or target materials can be used.

[0024] In an example, the plasma source is an inductively coupled plasma source. The plasma source may include one or more elongate antennas.

[0025] According to a second aspect of the present invention, there is provided a sputtering deposition method, comprising:

[0026] positioning a substrate in a sputtering deposition zone using a substrate holding device for sputtering depositing a target material from a first target onto the substrate;

[0027] moving a second target from a target initiation zone to the sputtering deposition zone using a target loading device for sputtering depositing a target material from the second target onto the substrate;

[0028] generating a plasma using a plasma source;

[0029] using a magnet arrangement to confine the plasma to:

[0030] the target initiation zone where the respective target is exposed to the plasma in use; and the sputtering deposition zone for sputtering deposition of the target material.

[0031] In an example, the method comprises:

[0032] moving the second target into the sputtering deposition zone to replace the first target;

[0033] moving the second target into the sputtering deposition zone for sputtering the target material from the first and second targets onto the substrate; or

[0034] when moving the second target to the sputtering deposition zone, moving the first target from the sputtering deposition zone.

[0035] Other features and advantages of the present invention will become apparent from the following description, which is given by way of example only with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 A schematic diagram of an apparatus according to an example is shown;

[0037] Figure 2 is a Figure 1 schematic diagram of an exemplary apparatus including illustrative magnetic field lines;

[0038] Figure 3 is a Figure 1 and 2 schematic plan view of a part of an exemplary apparatus,

[0039] Figure 4 is a Figure 3 schematic plan view of a part of an exemplary apparatus including illustrative magnetic field lines;

[0040] Figure 5is a schematic cross-sectional view of a magnetic component according to an example; and

[0041] Figure 6 is a schematic flow chart of a method according to an example. Detailed implementation

[0042] According to an example, with reference to the accompanying drawings, the details of the device and method according to the example will become apparent. In this specification, for purposes of explanation, many specific details of certain examples are set forth. References in the specification to "an example" or similar language mean that a particular feature, structure, or characteristic described in connection with that example is included at least in one example, but not necessarily in other examples. It should also be noted that some examples are schematically described, where some features are omitted and / or necessarily simplified for ease of explanation and understanding of the concepts underlying the examples.

[0043] Refer to Figures 1 to 5 , an example sputtering deposition apparatus 100 is shown. The apparatus 100 is used to sputter deposit a target material 108 onto a substrate 116. Thus, the apparatus 100 can be applied in many industrial applications, such as those utilizing thin film deposition. Industrial applications include, for example, the production of optical coating films, magnetic recording media, electronic semiconductor devices, LEDs, energy generation devices (such as thin film solar cells), and energy storage devices (such as thin film batteries). Thus, although the context of the present disclosure may in some cases relate to the production of energy storage devices or parts thereof, it should be understood that the sputtering deposition apparatus 100 and sputtering deposition method described herein are not limited to their production.

[0044] Although not shown in the drawings for clarity, in some examples, it should be understood that the apparatus 100 generally includes an outer shell (not shown), which is evacuated to a low pressure suitable for sputtering deposition, such as 3x10 -3 torr, during use. Such an outer shell can be evacuated to a suitable pressure (e.g., less than 1x10 -5 torr) by a pumping system (not shown). During use, a process or sputtering gas (such as argon or nitrogen) is introduced into the outer shell by a gas supply system (not shown) to an extent such that a pressure suitable for sputtering deposition, such as 3x10 -3 torr, is achieved.

[0045] Returning to Figures 1 to 5 the example shown in, generally, the apparatus 100 includes a substrate holding device 118, a target loading device 106, a plasma source 102, and a magnet arrangement 104.

[0046] The substrate holding device 118 is arranged to position the substrate 116 in the sputter deposition region 114. The substrate holding device 118 can guide the substrate 116 in the substrate transfer direction 115, such as a substrate web. The substrate holding device 118 can include a bending member 118 to guide the substrate 116 along, for example, a bending path (indicated by the arrow C in Figure 1 and Figure 2 ).

[0047] The bending member 118 can be arranged to rotate about an axis 120, such as the axis provided by the shaft 120. In the Figure 3 example shown, the axis 120 is also the longitudinal axis of the bending member 118. In some examples, the bending member 118 is a roller. In certain cases, the bending member 118 is provided by a generally cylindrical roller or drum 118 of the integral substrate supply assembly 119. The substrate supply assembly 119 can be arranged to supply the substrate 116 onto the drum 118 or from the drum 118, such that the substrate 116 is carried by at least a portion of the curved surface of the drum 118. In some examples, the substrate supply assembly includes: a first drum 110a arranged to supply the substrate 116 onto the roller 118; and a second drum 110b arranged to supply the substrate 116 from the roller 118 after the substrate 116 has followed the bending path C. The substrate supply assembly 119 can be part of a "roll-to-roll" process arrangement (not shown), where the substrate 116 is supplied from a first reel or spool (not shown) of the substrate 116, passes through the device 100, and is then supplied onto a second reel or spool (not shown) to form a loaded reel (not shown) of the processed substrate.

[0048] In some examples, the substrate 116 is or at least includes silicon or a polymer. In some examples, such as for the production of energy storage devices, the substrate 116 is or at least includes a nickel foil. However, it should be understood that any suitable metal can be used instead of nickel, such as aluminum, copper, or steel, or a metallized material including metallized plastic, such as aluminum on polyethylene terephthalate (PET).

[0049] A plasma source 102, which can also be referred to as a "plasma generation arrangement", is arranged to generate a plasma 112.

[0050] The plasma source 102 can be an inductively coupled plasma source, such as arranged to produce an inductively coupled plasma 112. Figure 1 and Figure 2The plasma source 102 shown in FIG. includes antennas 102a, 102b, and a radio frequency power supply system (not shown) can drive appropriate radio frequency (RF) power through the antennas to generate an inductively coupled plasma 112 from a process gas or a sputtering gas in a housing (not shown). In some examples, the plasma 112 is generated by driving an RF current through one or more antennas 102a, 102b, such as at a frequency between 1 MHz and 1 GHz; at a frequency between 1 MHz and 100 MHz; at a frequency between 10 MHz and 40 MHz; or in some examples, at a frequency of about 13.56 MHz or a multiple thereof. The RF power causes the process gas or the sputtering gas to ionize to generate the plasma 112. Tuning the RF power driven through one or more antennas 102a, 102b can affect the plasma density of the plasma 112 in the pretreatment zone. Therefore, by controlling the RF power at the plasma source 102, the pretreatment process can be controlled. This in turn can allow for improved flexibility in the operation of the sputtering deposition apparatus 100.

[0051] In some examples, the plasma source 102 is disposed away from the substrate holding device 118. For example, the plasma source 102 can be disposed at a distance radially away from the curved member 118. In this case, the plasma 112 is generated away from the substrate holding device 118.

[0052] One or more antennas 102a, 102b of the plasma source 102 can be elongated antennas and are in some examples substantially linear. In some examples, one or more antennas 102a, 102b are elongated antennas and extend in a direction substantially parallel to the longitudinal axis 120 of the curved member 108 (e.g., the axis 120 of the roller 118 passing through the origin of the radius of curvature of the roller 118). In Figure 1 an example, the longitudinal axis 120 of the roller 118 is also the rotational axis of the roller 118. One or more elongated antennas 102a, 102b can be curved. For example, such curved elongated antennas 102a, 102b can follow the curvature at the curved surface of the curved member 118. In some cases, one or more curved elongated antennas 102a, 102b extend in a plane substantially perpendicular to the longitudinal axis 120 of the curved member 118.

[0053] In some examples, the plasma source 102 includes two antennas 102a, 102b for generating the inductively coupled plasma 112. In some examples (e.g., as Figure 3As shown, antennas 102a, 102b are slender and substantially linear, and extend parallel to the longitudinal axis 120 (which may also be the rotational axis 120) of the bending member 118. Antennas 102a, 102b may extend substantially parallel to each other and may be laterally disposed with respect to each other. This can allow for the precise generation of an elongated region of plasma 112 between the two antennas 102a, 102b, which in turn helps to precisely confine the generated plasma 112 to at least the deposition region 114, which will be described in more detail below. In some examples, the length of antennas 120a, 120b is similar to that of the substrate holding device 118, and thus similar to the width of the substrate 116 guided by the substrate holding device 118. The slender antennas 102a, 102b can provide for the generation of plasma 112 within a region whose length corresponds to the length of the substrate guide 118 (and thus to the width of the substrate 116), and can thus allow for a uniform or consistent plasma 112 to be obtained across the width of the substrate 116. As described in more detail below, this can in turn help to provide a uniform or consistent sputter deposition.

[0054] The magnet arrangement 104 is configured to confine the plasma 112 within the device 100 (e.g., the plasma generated by the plasma generation arrangement 102) to the sputter deposition region 114 in order to provide for the sputter deposition of the target material 108 onto the substrate 116 during use. In an example, the sputter deposition region 114 includes a sputter deposition chamber (e.g., the “enclosure” described above; not shown in the figures). For example, the sputter deposition chamber may be under at least partial vacuum. In some cases, an inert gas (e.g., argon) is introduced into the sputter deposition chamber at low pressure and may be ionized. Bombardment of the target by the ions of the plasma can eject the target material 108 for deposition onto the substrate 116.

[0055] The substrate holding device 118 is arranged to position the substrate 116 within the sputter deposition region 114 for sputter depositing target material from the first target 108a onto the substrate 116. The target loading device 106 is arranged to move the second target 108b from the target activation region 113 into the sputter deposition region 114 for sputter depositing target material from the second target 108b onto the substrate 116.

[0056] The magnet arrangement 104 is also configured to confine the plasma 112 within the device 100 to the target activation region 113, within which the respective target is exposed to the plasma 112 during use. In some examples, the target activation region 113 includes a target activation chamber (similar to the “enclosure” described; not shown in the figures). During use, the target activation chamber is typically under at least partial vacuum. In Figure 1 and Figure 2In [the figure], in the target transfer direction 113, the sputter deposition region 114 is located after the target activation region 117. In use, this can allow the targets 108a, 108b, 108c to be processed before deposition occurs, for example as a “pre-treatment” or “activation” of the respective targets. This activation of the targets 108 generally involves removing material from the surface of the target 108 to sputter the material from the surface of the target 108 and deposit it onto the substrate 116 during sputter deposition. The sputter deposition process can be improved by treating or “activating” the target with the plasma 112 before deposition. For example, during the deposition process within the sputter deposition region 114, activating the target 108 can promote better adhesion of the target material 108 to the substrate 116. Thus, sputter deposition can be carried out more consistently. For example, this can improve the consistency of the processed substrate and, for example, reduce the need for quality control. In addition, this arrangement can allow for more efficient use of the generated plasma 112 and thus allow for a more efficient sputter deposition process, but also in a space-saving manner. For example, the same plasma source 102 can be used to activate the targets 108a, 108b, 108c and provide the sputter deposition of the target material onto the substrate 116.

[0057] In use, the magnet arrangement 104 can confine the plasma 112 within the target activation region 117 to interact with at least a portion of the surface of the respective targets 108a, 108b, 108c. The interaction between the plasma 112 and the surface of the respective targets 108a, 108b, 108c can process the targets 108a, 108b, 108c before they enter the sputter deposition region 114. This can improve the deposition of the target material 108 onto the substrate 116. In some cases, for example, during the ablation process within the target activation region 117, the plasma 112 interacts with the respective targets 108a, 108b, 108c in use. The plasma 112 can ablate the target surface as part of its processing, for example to remove material from the surface of the target 108, which can include impurities such as oxides and / or other inhomogeneities. This inhomogeneity can originate during the manufacture of the target. Thus, this activation of the target 108 can increase the homogeneity of the target surface. Further, when the target 108 reaches the sputter deposition region 114, this activation can allow the target material 108 to be deposited more uniformly onto the substrate 116. Thus, sputter deposition can be carried out more consistently. This can improve the consistency of the processed substrate and reduce the need for quality control.

[0058] Ablation as a target activation (or “roughening”) approach generally depends on exceeding the sputter threshold of the target. For example, the sputter threshold of the target can be a minimum energy threshold defined corresponding to the target material.

[0059] The sputtering threshold can be a limited amount of energy at which the energy transfer from plasma ions to atoms of the target material equals the binding energy of the surface atoms of the target material. In other words, sputtering (or ablation) of the target occurs when plasma ions transfer more energy into the target material than is required to detach atoms from the surface of the target material. However, below the sputtering threshold of the target material, target initiation or roughening can occur through reorganization of the target material. For example, at a plasma energy below the sputtering threshold of the target material, the energy transfer from plasma ions to the target material can cause bond breakage and reformation, such as the breaking and reformation of chemical bonds between atoms of the substrate material. This can result in activation or roughening of the target surface without ablation.

[0060] In Figure 1 and Figure 2 In the example of, the magnet arrangement 104 includes magnetic elements 104a, 104b, 104c, which are arranged to provide a confinement magnetic field to confine (e.g., direct in some examples) the plasma to the target initiation and sputter deposition zones 114, 117. The magnet arrangement 104 (e.g., magnetic elements 104a, 104b, 104c) can be disposed outside the curve of the curved member 118.

[0061] It should be understood that magnetic field lines can be used to form the arrangement or geometry of a magnetic field. In Figure 2 and Figure 4 An exemplary magnetic field provided by exemplary magnetic elements 104a, 104b, 104c is schematically shown, where magnetic field lines (conventionally indicated by arrow lines) are used to describe the magnetic field provided in use.

[0062] Magnetic field lines arranged to impinge on the target initiation and sputter deposition zones 114, 117 confine the generated plasma 112 to the target initiation and sputter deposition zones 114, 117. This occurs because the generated plasma 112 tends to follow the magnetic field lines. For example, ions of the plasma 112 within the confinement magnetic field and having a certain initial velocity will be subject to the Lorentz force, which causes the ions to move in a periodic motion around the magnetic field lines. If the initial motion is not strictly perpendicular to the magnetic field, the ions follow a helical path centered on the magnetic field lines. Thus, a plasma containing such ions tends to follow the magnetic field lines and can therefore be confined to (e.g., directed along) the path defined by them. Accordingly, since the magnetic field lines are arranged to enter the target initiation and sputter deposition zones 114, 117, the plasma 112 will thus be confined to (e.g., directed to) the target initiation and sputter deposition zones 114, 117.

[0063] In some examples, the plasma 112 substantially conforms to the curvature of at least a portion of the curved surface of the curved member 118. For example, as Figure 2 and Figure 4As shown, the magnetic field lines that describe the confinement magnetic field are curved so as to substantially conform to the curvature of at least a portion of the curved surface of the curved member 118, e.g., so as to substantially follow the curve of the curved path C. In such an example, it should be understood that, in principle, the entire or all of the magnetic field provided by the magnetic elements 104a, 104b, 104c generally includes a portion described by magnetic field lines that are not arranged to conform to the curvature of at least a portion of the curved surface of the curved member 118 (e.g., follow the curve of the curved path C). However, in such an example, the provided confinement magnetic field (i.e., the portion of the entire or whole magnetic field provided by the magnetic elements 104a, 104b, 104c that confines the plasma 112 to the target initiation region 114) is described by magnetic field lines that substantially conform to the curvature of at least a portion of the curved surface of the curved member 118.

[0064] In some examples, the magnetic field lines that describe the confinement magnetic field are arranged to conform to (e.g., follow) the curve of the curved member 118 or the drum around most or a significant segment or a portion of the curved member 118. For example, in use, the magnetic field lines can conform to the curve of the curved member 118 over all or most of a fictional segment of the curved member 118 that bears on or contacts the substrate 116. For example, the shape of the curved member 118 is generally substantially cylindrical, and the magnetic field lines that describe the confinement magnetic field can be arranged to follow the curve of the curved member 118 around at least about 1 / 16 or at least about 1 / 8 or at least about 1 / 4 or at least about 1 / 2 of the circumference of the curved member 118. For example, Figure 2 the magnetic field lines that describe the confinement magnetic field in follow a curved path that is approximately around at least 1 / 4 of the circumference of the curved member 118. Thus, in the example, the plasma 112 substantially conforms to the curve of at least about 1 / 16 or at least about 1 / 8 or at least about 1 / 4 or at least about 1 / 2 of the curved surface (e.g., the circumference) around the curved member 118.

[0065] In the example, one or more of the magnetic elements 104a, 104b, 104c are arranged such that the plasma source 102 separates a first subset of the magnetic elements 104a, 104b, 104c from a second subset of the magnetic elements 104a, 104b, 104c. For example, Figure 1FIG. 104c shows one of the magnetic elements 104c, which is separated from the other magnetic elements 104a, 104b by a plasma source 102 located therebetween. For example, a first subset 104c of the magnetic elements 104a, 104b, 104c is configured to confine the plasma 112 from the plasma source 102 to the target initiation region 117. For example, a second subset 104a, 104b of the magnetic elements 104a, 104b, 104c is configured to confine the plasma 112 from the plasma source 102 to the sputter deposition region 114. The magnetic elements 104a, 104b, 104c together are configured to confine the plasma 112 to the target initiation region 114 and the sputter deposition region 117 as described herein.

[0066] In certain examples, in the case of referring to the curve of the curved path C, this can be understood as the degree to which the substrate guide 118 carrying the substrate 116 bends along the path. For example, the bending member 118 (such as a roller or a drum) carries the substrate 116 along the curved path C. In such an example, the curve of the curved path C is generated by the degree (e.g., deviation from a plane) of bending of the curved surface of the bending member 118 carrying the substrate 116. In other words, the curve of the curved path C can be understood as the degree to which the bending member 118 causes the substrate 116 to follow the curve of the curved path C. Substantially following the curve of the curved path C can be understood as substantially conforming to or replicating the curved shape of the curved path C. For example, the magnetic field lines can follow a curved path having a common center of curvature with the curved path C, but having a different (in the illustrated example, larger) radius of curvature from the curved path C. For example, the magnetic field lines can follow a curved path that is substantially parallel (but radially offset) to the curved path C of the substrate 116. In an example, the magnetic field lines follow a curved path that is substantially parallel (but radially offset) to the curved surface of the bending member 118. For example, Figure 2 It is described that the magnetic field lines restricting the magnetic field follow a curved path at least in the sputter deposition region 114, which is substantially parallel (but radially offset) to the curved path C, and thus the magnetic field lines substantially follow the curve of the curved path C.

[0067] It is described that the magnetic field lines restricting the magnetic field can be arranged to follow the curve of the curved path C around most or a significant segment or a part of the curved path C. For example, the magnetic field lines can follow the curve of the bending member 118 over all or a significant part of a hypothetical segment of the curved path C, where the substrate 116 is guided by the bending member 118 over all or a significant part of the hypothetical segment of the curved path C. In an example, the curved path C represents a part of the circumference of a hypothetical circle, and it is characterized that the magnetic field lines restricting the magnetic field are arranged to follow the curve of the curved path C around at least about 1 / 16 or at least about 1 / 8 or at least about 1 / 4 or at least about 1 / 2 of the circumference of the hypothetical circle.

[0068] Restricting the generated plasma 112 to a curve that substantially conforms to at least a portion of the curved surface of the bending member 118, such as a curve following the bending path C, can allow for a more uniform distribution of the plasma density at the substrate 116 at least in the direction around the curved surface of the bending member 118 (e.g., the curve of the bending path C). This can in turn allow for a more uniform sputter deposition onto the substrate 116 in the direction around the bending member 118 (e.g., the bending path C). Furthermore, the sputter deposition can thus be performed more consistently. This can improve the consistency of the processed substrate and, for example, reduce the need for quality control compared to a magnetron sputter deposition apparatus, in which magnetic field lines describing the generated magnetic field tightly loop into and out of the substrate and thus do not allow for a uniform distribution of plasma density at the substrate.

[0069] Alternatively or additionally, restricting the generated plasma 112 to a curve that substantially conforms to at least a portion of the curved surface of the bending member 118, such as a curve following the bending path C, can allow for an increase in the area of the substrate 116 exposed to the plasma 112 and thus allow for an increase in the area in which sputter deposition can be achieved. For a given degree of deposition, this can allow the substrate 116 to be fed through a roll-to-roll apparatus at a faster rate and thus allow for a more efficient sputter deposition.

[0070] In some examples, the magnet arrangement (or "magnetic confinement arrangement") 104 includes at least two magnetic elements 104a, 104b arranged to provide a magnetic field. In some cases, the at least two magnetic elements 104a, 104b are arranged such that the region of relatively high magnetic field strength defined between the at least two magnetic elements 104a, 104b is in the form of a sheet. The magnet arrangement 104 can thus be configured to confine the plasma 112 in the form of a sheet, i.e., a form in which the depth (or thickness) of the plasma 112 is significantly less than its length or width. The thickness of the sheet of the plasma 112 can be substantially constant along the length and width of the sheet. The density of the sheet of the plasma 112 can be substantially uniform in one or both of its width and length directions.

[0071] In some examples, the region of relatively high magnetic field strength provided between the at least two magnetic elements 104a, 104b substantially conforms to a curve of at least a portion of the curved surface of the bending member 118, such as a curve substantially following the bending path C.

[0072] In Figure 1 and Figure 2 the example schematically shown in, the two magnetic elements 104a, 104b are located on opposite sides of the roller 118 and are both provided above the lowermost part of the roller 118 (in Figure 1(in the sense of). Two magnetic elements 104a, 104b confine the plasma 112 on both sides of the bending member 118 to conform to the curve of at least a portion of the curved surface of the bending member 118, for example, following the curve of the bending path C. For example, the plasma 112 follows the curve of the bending path C on the feed side and the discharge side. On the feed side, the substrate 116 is supplied onto the bending member 118, and on the discharge side, the substrate 116 is discharged from the bending member 118. Thus, having at least two magnetic elements can provide an (additional) increase in the area of the substrate 116 exposed to the plasma 112 in the sputter deposition region 114, and thus an increase in the area where sputter deposition can be achieved. For example, for a given degree of deposition, this can allow the substrate 116 to be fed through the roll-to-roll device at a (still) faster rate and thus allow for more efficient sputter deposition.

[0073] As described, in some examples, a first subset of the magnetic elements 104a, 104b, 104c can be arranged on a side of the plasma source 102 opposite to a second subset of the magnetic elements 104a, 104b, 104c. For example, the magnet arrangement 104 can include at least three magnetic elements 104a, 104b, 104c arranged to provide a magnetic field. In an example, at least two of the at least three magnetic elements 104a, 104b, 104c (shown as two magnetic elements 104a, 104b in the figure) are arranged to provide a magnetic field that impinges on the sputter deposition region 114, as described in the above example. At least one of the at least three magnetic elements 104a, 104b, 104c (shown as the magnetic element 104c in the figure) is arranged to provide a magnetic field that impinges on the target initiation region 117. Thus, at least two of the at least three magnetic elements 104a, 104b, 104c, the magnetic elements 104a, 104b, can be configured to confine the plasma 112 to at least the sputter deposition region 114, while at least one of the at least three magnetic elements 104a, 104b, 104c, the magnetic element 104c, can be configured to confine the plasma 112 to at least the target initiation region 117. The at least three magnetic elements 104a, 104b, 104c together are configured to confine the plasma 112 to the target initiation region 114 and the sputter deposition region 117 as described herein.

[0074] In some examples, one or more magnetic elements 104a, 104b, 104c are electromagnets 104a, 104b, 104c. The apparatus 100 may include a magnetic controller (not shown) for controlling, for example, the magnetic field strength provided by one or more of the electromagnets 104a, 104b, 104c. This may allow control of the arrangement of magnetic field lines that define the confinement magnetic field. In turn, the plasma density at the substrate 116 and / or the target material 108 within the sputter deposition zone 114 may be adjusted, and thus control of sputter deposition may be improved. This may in turn allow for improved flexibility in the operation of the sputter deposition apparatus 100. Additionally, controlling the magnetic field strength provided by the magnet arrangement 104 may similarly allow adjustment of the plasma density at the substrate 116 within the target initiation zone 117. This may in turn allow for improved control of the target initiation process (such as the amount of ablation) and increased flexibility in the operation of the sputter deposition apparatus 100 such that different types of substrates and / or target materials may be used. Controlling the arrangement of magnetic field lines that define the confinement magnetic field provided by the magnet arrangement 104 allows control of the shape of the plasma 112 within the target initiation zone 117 as well as the plasma density within the target initiation zone 117. This may in turn allow adjustment of the size of the target initiation zone 117, e.g., the size of the region where the substrate 116 is exposed to the plasma during use. Thus, further flexibility may be provided in the operation of the sputter deposition apparatus 100 such that different types of substrates and / or target materials may be used.

[0075] In some examples, one or more magnetic elements 104a, 104b, 104c are provided by solenoids 104a, 104b, 104c. In an example, the cross-section of the solenoids 104a, 104b, 104c is elongate. For example, the cross-section of the solenoids 104a, 104b, 104c may be elongate in a direction substantially parallel to the axis of rotation of the bending member 118 (such as the roller 118). Each solenoid 104a, 104b, 104c may define an opening through which the plasma 112 passes (is confined) during use. According Figure 1 and Figure 2 to the example schematically illustrated in, there are three solenoids 104a, 104b, 104c and each solenoid 104a, 104b, 104c is angled such that a region of relatively high magnetic field strength is provided between the solenoids 104a, 104b, 104c, e.g., substantially following a curved path C. In this way, as Figure 1 shown, in one direction, the generated plasma 112 passes through the first solenoid 104a of the solenoids, beneath the roller 118 ( Figure 1enters the deposition region 114 (as shown), and travels upward toward and through the second solenoid 104b in the solenoid. In the other direction, the generated plasma 112 passes through the first solenoid 104a in the solenoid, away from the roller 118, toward and through the third solenoid 104c in the solenoid, and enters the target activation region 117.

[0076] Although Figure 1 and 2 only three magnetic elements 104a, 104b, and 104c are shown in [figures], it should be understood that more magnetic elements (not shown), such as more such solenoids, may be placed along the path of the plasma 112. This can strengthen the confinement magnetic field, thereby precisely confining the plasma. Additionally, or alternatively, this can allow for more degrees of freedom in the control of the confinement magnetic field.

[0077] As Figure 1 and Figure 2 shown, and as described above, the sputter deposition apparatus 100 includes a target loading device 106 that is arranged to move the second target 108b from the target activation region 117 to the sputter deposition region 114 to sputter deposit target material from the second target 108b onto the substrate 116 during use. In this case, the deposition region 114 is typically located between a portion of the target loading device 106 and the substrate holding device 118. For example, this portion of the target loading device 106 and the substrate holding device 118 are spaced apart from each other to form the deposition region 114 therebetween. The deposition region 114 can be regarded as a region or volume in the apparatus 100, such as the region or volume between the substrate holding device 118 and this portion of the target loading device 106, in which sputter deposition from the target material 108 to the substrate 116 occurs during use.

[0078] In the example, the target loading device 106 includes a target transporter 107 to transport the second target 108b between the target activation region 117 and the sputter deposition region 114 in the target transport direction 113. The target material 108 can be the material based on which sputter deposition is performed on the substrate 116. For example, the target material 108 is or includes the material deposited onto the substrate 116 by sputter deposition.

[0079] In an example, the target loading device 106 is arranged to move the second target 108b into the sputter deposition area 114 to replace the first target 108a, such as the first target already in the sputter deposition area 114. For example, the second target 108b is loaded on top of the first target 108a to effectively replace the first target 108a for sputtering. Alternatively, both the first and second targets 108a, 108b can be positioned in the sputter deposition area 114 for simultaneous sputtering of the two targets 108a, 108b. For example, the target loading device 106 is arranged to move the second target 108b into the sputter deposition area 114 for sputter depositing target material from the first and second targets 108a, 108b onto the substrate 116 during use.

[0080] In some examples, the target loading device 106 is arranged to move the first target 108a out of the sputter deposition area 114 when moving the second target 108b into the sputter deposition area 114. For example, when the target loading device 106 loads a new target 108b into the deposition area 114, the target 108a already in the deposition area 114 is removed from the deposition area 114. In certain cases, the target loading device is arranged to remove the second target 108b from the sputter deposition area 114 and return the first target 108a to the sputter deposition area 114. For example, this involves alternating deposition of different target materials, such as by alternating deposition of the first and second targets 108a, 108b.

[0081] In an example, the target loading device 106 is arranged to move the third target 108c out of the sputter deposition area 114 when moving the second target 108b into the sputter deposition area 114. For example, more than one target (e.g., the first and second targets 108a, 108b) is positioned in the deposition area by the target loading device 106 while another target (e.g., the used target 108c) is removed therefrom.

[0082] In an example, the target loading device 106 is configured to move the second target 108b into the sputter deposition area 114 after the second target 108b has been in the target activation area 117 for at least a predetermined amount of time. The amount of time the target 108 spends in the target activation area 117 can correspond to the amount of activation of the target 108 obtained, such as the amount of surface ablation. Thus, the predetermined amount of time can correspond to the desired amount of activation of the second target 108b.

[0083] In an example, the apparatus 100 includes means 108b having a sensor to detect the surface homogeneity of the second target. The target loading device 106 can be configured to move the second target 108b into the sputter deposition area 114 based on sensor data output by the sensor.

[0084] In an example, the target transfer direction 113 and the substrate transfer direction 115 are substantially parallel to each other. For example, as Figure 1 and Figure 2As shown, the target transporter 107 transports targets 108a, 108b, 108c in a direction parallel to the direction in which the substrate holding device 118 transports the substrate 116. In other examples, the target and substrate transport directions (or first and second transport directions) 113, 115 are substantially orthogonal to each other. For example, in Figure 1 , instead of the target transport direction 113 being from right to left, the target transport direction 113 can enter or leave the page. Alternatively, Figure 1 and Figure 2 the substrate supply assembly 119 can be rearranged so that the substrate transport direction 115 enters or leaves the page while the target transport direction 113 continues to be from left to right.

[0085] In some cases, the target transport direction 113 is rotational. For example, the target loading device 106 includes a rotating target transporter 107 that is arranged to transport targets 108a, 108b, 108c in an elliptical (e.g., circular) path. For example, an elliptical path can be formed in a plane below the substrate holding device 108. Alternatively, the target transporter 107 describes an elliptical path and transports targets 108a, 108b, 108c without rotating about an axis. For example, the target conveyor belt 107 travels in an elliptical path described in a plane below the substrate holding device 108.

[0086] In some examples, such as for producing an energy storage device, the target material 108 is or includes (or is or includes a precursor material for) the cathode layer of the energy storage device, such as a material suitable for storing lithium ions, such as lithium cobalt oxide, lithium iron phosphate, or an alkali metal polysulfide salt. Additionally, or alternatively, the target material 108 is or includes (or is or includes a precursor material for) the anode layer of the energy storage device, such as lithium metal, graphite, silicon, or indium tin oxide. Additionally, or alternatively, the target material 108 is or includes (or is or includes a precursor material for) the electrolyte layer for the energy storage device, such as a material that is ion-conductive but also an electrical insulator, such as lithium phosphorus oxynitride (LiPON). For example, the target material 108 is or includes LiPO, which is used as a precursor material for depositing LiPON onto the substrate 116, such as by reaction with nitrogen in the region of the target material 108.

[0087] In some examples, the magnet arrangement 104 (e.g., including one or more magnetic elements 104a, 104b, 104c) is configured to confine the plasma 112 in the form of a thin sheet. For example, the magnet arrangement 104 is arranged to provide a magnetic field to confine the plasma 112 in the form of a thin sheet. In some examples, the magnet arrangement 104 is configured to confine the plasma 112 in the form of a thin sheet having a substantially uniform density, e.g., at least in the deposition region 114 and / or the target activation region 117. In some cases, the magnet arrangement 104 is configured to confine the plasma 112 in the form of a curved thin sheet.

[0088] For example, as Figure 4 and Figure 5 shown, in some examples, one or more of the solenoids 104a, 104b, 104c are elongated in a direction substantially perpendicular to the direction of the magnetic field lines generated therein during use. For example, as Figures 3 to 5 may best be shown, the solenoids 104a, 104b, 104c each have an opening through which the plasma 112 is confined (the plasma 112 passes through this opening) during use, where the opening is elongated in a direction substantially parallel to the longitudinal axis 120 of the curved member 118. As Figure 3 and Figure 4 may best be shown, the elongated antennas 102a, 102b extend parallel to and in line with the solenoids 104a, 104b, 104c. As described above, the plasma 112 can be generated along the lengths of the elongated antennas 102a, 102b, and the elongated solenoids 104a, 104c confine (e.g., direct) the plasma 112 away from the elongated antennas 102a, 102b and through their respective elongated solenoids 104a, 104c.

[0089] The plasma 112 can be confined (e.g., directed) by the elongated solenoids 104a, 104c from the elongated antennas 102a, 102b in the form of a sheet. That is, in a form where the depth (or thickness) of the plasma 112 is significantly less than its length or width. The thickness of the plasma sheet 112 can be substantially constant along the length and width of the sheet. The density of the plasma 112 in the sheet can be substantially uniform in one or both of its width and length directions. The plasma 112 in the form of a sheet can be confined by the magnetic field provided by the solenoids 104a, 104b, 104c around the curved member 118 so as to substantially conform to the curve of the curved surface of the curved member 118, e.g., follow the curve of the curved path C into the deposition zone 114. Thus, as referred to above, in certain cases, the plasma 112 can be confined in the form of a curved sheet. The thickness of such a curved sheet of plasma 112 can be substantially constant along the length and width of the curved sheet. The plasma 112 in the form of a curved sheet can have a substantially uniform density, e.g., the density of the plasma 112 in the form of a curved sheet is substantially uniform in one or both of its length and width.

[0090] Confining the plasma in the form of a curved sheet can allow an increase in the area of the substrate 116 carried by the curved member 118 that is exposed to the plasma 112, thereby allowing an increase in the area where sputter deposition can be achieved. For example, for a given degree of deposition, this can allow the substrate 116 to be fed through the roll-to-roll device at a (still) faster rate and thus allow for more efficient sputter deposition.

[0091] Confining the plasma to the form of a curved sheet (e.g., a curved sheet having a substantially uniform density, e.g., at least in the sputter deposition zone 114) can alternatively or additionally allow for a more uniform distribution of the plasma density at the substrate 116, e.g., both in the direction around the curve of the curved member 118 and along the length of the curved member 118. This, in turn, can allow for a more uniform sputter deposition on the substrate 116, e.g., in the direction around the surface of the curved member 118 and across the width of the substrate 116. Thus, the sputter deposition can be carried out more consistently. Accordingly, for example, compared to a magnetron sputter deposition apparatus, the consistency of the processed substrate can be improved and the need for quality control can be reduced, in which the magnetic field lines characterizing the magnetic field generated thereby tightly loop into and out of the substrate and thus do not allow for a uniform distribution of the plasma density at the substrate.

[0092] In some examples, the confined plasma 112 is a high-density plasma in at least the deposition zone 114. For example, the confined plasma 112 (in the form of a curved sheet or other form) has a density of 10 11 cm -3 or greater in at least the deposition zone 114. The high-density plasma 112 in the deposition zone 114 can allow for efficient and / or high-speed sputter deposition.

[0093] Reference Figure 6 shows an example sputter deposition method 600 in a flow chart. In method 600, a substrate is positioned in a sputter deposition zone using a substrate holding device for sputter depositing target material from a first target onto the substrate. A second target is moved from a target initiation zone to the sputter deposition zone using a target loading device for sputter depositing target material from the second target onto the substrate. A plasma is generated using a plasma source and the plasma is confined to the target initiation and sputter deposition zones by a magnet arrangement. In the target initiation zone, the respective target is exposed to the plasma, and in the sputter deposition zone, e.g., behind the target initiation zone in the target transfer direction, sputter deposition of the target material (onto the substrate) is provided.

[0094] The first and second targets, the target material, the substrate, the substrate holding device, the plasma source, the magnet arrangement, the target initiation zone, and the sputter deposition zone can be any of the examples of the above reference Figures 1 to 5 In some examples, the method can be performed by the device 100 described in reference Figures 1 to 5 .

[0095] In step 602, the method involves positioning a substrate in a sputter deposition zone using a substrate holding device for sputter depositing target material from a first target onto the substrate. For example, the substrate is guided by the substrate holding device (e.g., the curved member 118) of the above reference Figures 1 to 5 .

[0096] In step 604, the method involves using a target loading device to move a second target from a target start region to a sputter deposition region for sputter depositing target material from the second target onto a substrate. For example, the second target is moved by the target loading device 106 of the above reference Figures 1 to 5 .

[0097] In step 606, the method includes generating a plasma using a plasma source. For example, the plasma is generated by the plasma generation arrangement 102 of the above reference Figures 1 to 5 .

[0098] In step 608, the method includes using a magnet arrangement to confine the plasma to the target start region and the sputter deposition region. For example, the plasma is confined by the magnet arrangement 104 of the above reference Figures 1 to 5 . Within the target start region, the corresponding target is exposed to the plasma. The sputter deposition region provides for sputter deposition of the target material onto the substrate.

[0099] As described above, confining the generated plasma in this manner can allow for more efficient use of the generated plasma, thus enabling a more efficient sputter deposition process, but also in a space-saving manner. For example, confining the generated plasma in this manner allows the same plasma source to be used to initiate the target and provide for sputter deposition of the target material 108 onto the substrate.

[0100] In some cases, method 600 involves moving the second target to the sputter deposition region in place of the first target. Alternatively, the second target is moved into the sputter deposition region so that the target material is sputter deposited from the first and second targets onto the substrate, for example simultaneously from both targets. As another alternative, when the second target is moved into the sputter deposition region, the first target can be moved from the sputter deposition region. Such examples have been described in more detail above with reference to Figures 1 to 5 .

[0101] The above examples should be understood as illustrative examples of the present invention. Further embodiments are envisioned. For example, many of the described examples use a bending member to guide the substrate. The bending member, such as a roller or a wheel, can form part of or work with a roll-to-roll system for transporting the substrate. In some cases, the bending member itself may not be a roller, but can still define a curved path along which the substrate can be transported. However, although in some cases a curved substrate holding device is preferred, embodiments are also envisioned where this is not the case, for example, in the absence of a roll-to-roll system. Thus, for example, such embodiments of a sputter deposition apparatus or method can be implemented in a system using the wafer-to-wafer and / or substrate support laser lift-off techniques of KR20130029488.

[0102] It should be understood that any feature described with respect to any one example can be used alone or in combination with other features described, and can also be combined with one or more features of any other example or any combination of other examples. In addition, equivalents and modifications not described above can also be employed without departing from the scope of the invention as defined in the appended claims.

Claims

1. A sputtering deposition apparatus, comprising: a substrate holding device for positioning a substrate in a sputtering deposition zone for sputter depositing a target material from a first target onto the substrate in use; a target loading device for moving a second target from a target initiation zone into the sputtering deposition zone for sputter depositing a target material from the second target onto the substrate in use; a plasma source for generating a plasma; a magnet arrangement configured to confine the plasma within the apparatus to: a target initiation zone where a corresponding target is exposed to the plasma in use to ablate the surface of the corresponding target without sputter depositing onto the substrate; and a sputtering deposition zone for sputter depositing the target material.

2. The sputtering deposition apparatus according to claim 1, wherein, The target loading device is arranged to move the second target into the sputtering deposition zone to replace the first target.

3. The sputtering deposition apparatus according to claim 1, wherein, The target loading device is arranged to move the second target into the sputtering deposition zone for sputter depositing the target material from the first target and the second target onto the substrate in use.

4. The sputtering deposition apparatus according to claim 1, wherein The target loading device is arranged to move the first target out of the sputtering deposition zone when moving the second target into the sputtering deposition zone.

5. The sputtering deposition apparatus according to claim 4, wherein, The target loading device is arranged to remove the second target from the sputtering deposition zone and return the first target to the sputtering deposition zone.

6. The sputtering deposition apparatus according to any one of the preceding claims, wherein, The target loading device is arranged to move a third target out of the sputtering deposition zone when moving the second target into the sputtering deposition zone.

7. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The magnet arrangement is configured to confine the plasma within the target initiation zone to interact with at least a portion of the surface of the corresponding target in use.

8. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, Within the target initiation zone, the plasma interacts with the corresponding target during ablation in use.

9. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The sputtering deposition zone includes a sputtering deposition chamber.

10. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The target initiation zone includes a target initiation chamber.

11. The sputtering deposition apparatus according to claim 10, wherein, The target initiation chamber is under at least partial vacuum in use.

12. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The target loading device includes a target transporter for transporting the second target in a first transport direction between the target initiation zone and the sputtering deposition zone.

13. The sputtering deposition apparatus according to claim 12, wherein, The substrate holding device is arranged to guide the substrate through the sputtering deposition zone in a second transport direction.

14. The sputtering deposition apparatus according to claim 13, wherein: the first transport direction and the second transport direction are substantially parallel to each other; the first transport direction and the second transport direction are substantially orthogonal to each other; or the first transport direction is rotational.

15. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The target loading device is configured to move the second target into the sputtering deposition zone after the second target has spent at least a predetermined amount of time within the target initiation zone.

16. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The apparatus includes means having a sensor for detecting the surface homogeneity of the second target, wherein the target loading device is configured to move the second target into the sputtering deposition zone based on sensor data output by the sensor.

17. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The substrate holding device includes a bending member.

18. The sputtering deposition apparatus according to claim 17, wherein, The bending member includes rollers.

19. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The magnet arrangement is configured to confine the plasma in the form of a sheet.

20. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The magnet arrangement includes one or more magnetic elements.

21. The sputtering deposition apparatus according to claim 20, wherein, The apparatus includes a magnetic controller for controlling the magnetic field strength of the one or more magnetic elements.

22. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The plasma source is an inductively coupled plasma source.

23. The sputtering deposition apparatus according to any one of claims 1 to 5, wherein, The plasma source includes one or more elongated antennas.

24. A sputter deposition method, comprising: positioning a substrate in a sputter deposition zone using a substrate holding device for sputter depositing target material from a first target onto the substrate; moving a second target from a target activation zone to the sputter deposition zone using a target loading device for sputter depositing target material from the second target onto the substrate; generating a plasma using a plasma source; using a magnet arrangement to confine the plasma to: a target activation zone, in which a corresponding target is exposed to the plasma in use to ablate the surface of the corresponding target without sputter depositing onto the substrate; and a sputter deposition zone for sputter deposition of target material.

25. The sputter deposition method according to claim 24, comprising: moving the second target to the sputter deposition zone to replace the first target; moving the second target to the sputter deposition zone for sputter depositing target material from the first target and the second target onto the substrate; or when moving the second target to the sputter deposition zone, moving the first target from the sputter deposition zone.

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