Substrate processing equipment

Abstract

A substrate processing device comprises a process chamber and a substrate carrier. The process chamber has a plasma inlet wall and a surrounding wall. The plasma inlet wall is configured to receive output from a remote plasma source. The surrounding wall forms an inner surface of the chamber, and the inner surface defines an internal space to receive a substrate. The substrate carrier can be raised and lowered in the internal space of the process chamber and has a substrate supporting surface facing the plasma inlet wall. The surrounding wall has a first section and a second section in a cross section of the process chamber. The first section corresponds to a process area of ​​the substrate carrier and has a first width. The second section is farther away from the plasma inlet wall than the first section and has a width greater than the first width.

Description

Technical Field

[0001] The present disclosure relates to process equipment, and in particular to substrate processing equipment utilizing a remote plasma source. Background Art

[0002] The International Technology Roadmap for Semiconductors (ITRS) pointed out that the traditional CMOS process has reached its limit, and the continued industry growth and the continuous reduction of the cost per unit function will require new device types, new packaging architectures and new materials to cope with it. Especially when Moore's Law may come to an end, heterogeneous integration has officially become the development direction of the semiconductor industry. The system in a package (SiP) using the packaging process will be the most critical technology. It is the best solution to balance performance diversity and cost. In response to this new architecture, printed circuits, thinner wafers, and active / passive embedded devices will rise, and then the production equipment and process materials used in packaging will also change rapidly to meet the needs of the new architecture. In the next 15 years, the layout of heterogeneous integration will focus on assembly and packaging, testing, and interconnection technology.

[0003] Advanced packaging technologies such as embedded die in substrate (EDS), embedded passive in substrate (EPS), and fan-out panel level package (FOPLP) generally use composite substrates containing dielectric insulation materials, semiconductor component chips, and metal wires (interconnection). In some manufacturing processes using EDS, EPS, or FOPLP packaging technologies, the cut semiconductor components, passive components, or metal bumps (such as copper pillars) are arranged and buried in large organic insulating substrates or build-up materials (such as molding compounds, copper clad laminates (CCL), ABF build-up films (Ajinomoto Build-up Films), or dry film resists); then the unnecessary organic insulating substrates or materials are thinned by grinding to selectively expose chip components or metal wires. However, during the grinding process, the chips, components, or copper pillars may be damaged by external stress. Summary of the invention

[0004] One aspect of the present disclosure provides a substrate processing device, which includes a process chamber and a substrate carrier. The process chamber has a plasma inlet wall and a surrounding wall. The plasma inlet wall is configured to receive an output from a remote plasma source. The surrounding wall has an inner surface, and the inner surface defines an internal space to receive a substrate. The substrate carrier can be raised and lowered in the internal space of the process chamber and has a substrate supporting surface facing the plasma inlet wall. The surrounding wall has a first section and a second section in a cross section of the process chamber. The first section corresponds to a process area of ​​the substrate carrier and has a first width. The second section is farther away from the plasma inlet wall than the first section and has a width greater than the first width.

[0005] One aspect of the present disclosure provides a substrate processing device, comprising a process chamber and a substrate carrier. The process chamber defines an internal space for receiving a substrate. The process chamber has a base, a plasma inlet wall and a baffle ring. The plasma inlet wall is configured to enclose the base and receive an output from a remote plasma source. The baffle ring is disposed between the base and the plasma inlet wall. The substrate carrier is movably disposed in the internal space of the process chamber and has a substrate supporting surface facing the plasma inlet wall. In a cross section of the process chamber, the width of the substrate carrier processing area defined by the inner surface of the baffle ring is narrower than the inner wall spacing width of the base. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] In order to understand the features of the present invention described above, a more specific description of the present invention described above can be provided with reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate typical embodiments of the present invention and are therefore not to be considered as limiting the scope of the present invention, as the present invention may admit other equivalent embodiments.

[0007] Figure 1 shows a cross-sectional schematic diagram of a substrate processing apparatus according to some embodiments of the present disclosure;

[0008] Figure 2 shows an enlarged view of a region of a substrate processing apparatus according to some embodiments of the present disclosure;

[0009] Figure 3A A three-dimensional schematic diagram of a substrate processing device according to some embodiments of the present disclosure is shown;

[0010] Figure 3B and 3C Schematic diagrams of three-dimensional substrate carriers according to some embodiments of the present disclosure are respectively shown;

[0011] Figure 4 shows a bottom schematic diagram of a plasma inlet wall according to some embodiments of the present disclosure;

[0012] Figure 5 shows a schematic cross-sectional view of a plasma inlet wall according to some embodiments of the present disclosure;

[0013] Figure 6 A partial cross-sectional schematic diagram of a plasma inlet wall according to some embodiments of the present disclosure is shown;

[0014] Figure 7 shows experimental data according to some embodiments of the present disclosure; and

[0015] Figure 8 A schematic top view of a substrate processing apparatus according to some embodiments of the present disclosure is shown.

[0016] It is to be noted, however, that the appended drawings illustrate only exemplary embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

[0017] It should be noted that these drawings are intended to illustrate the general characteristics of methods, structures and / or materials used in certain example embodiments and to supplement the written description provided below. However, these drawings are not drawn to scale and may not accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be interpreted as defining or limiting the range of values ​​or characteristics covered by the example embodiments. For example, the relative thicknesses and positions of layers, regions and / or structural elements may be reduced or exaggerated for clarity. The use of similar or identical reference numerals in the various drawings is intended to indicate the presence of similar or identical elements or features. DETAILED DESCRIPTION

[0018] The following description will refer to the accompanying drawings to more fully describe the present disclosure. Illustrated in the accompanying drawings are exemplary embodiments of the present disclosure. However, the present disclosure can be implemented in many different forms and should not be construed as being limited to the exemplary embodiments set forth herein. These exemplary embodiments are provided to make the present disclosure thorough and complete and to fully convey the scope of the present disclosure to those skilled in the art. Similar reference numerals represent identical or similar elements.

[0019] The terms used herein are only used for the purpose of describing specific exemplary embodiments and are not intended to limit the present disclosure. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to also include plural forms. In addition, when used herein, "include" and / or "comprise" or "include" and / or "includes" or "have" and / or "have", integers, steps, operations, elements and / or elements, but do not exclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, elements and / or groups thereof.

[0020] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. In addition, unless explicitly defined herein, terms such as those defined in common dictionaries should be interpreted as having a meaning consistent with their meaning in the relevant art and the present disclosure, and will not be interpreted as an idealized or overly formal meaning.

[0021] Will combine Figures 1 to 8 The exemplary embodiments are described in the drawings in the accompanying drawings. DETAILED DESCRIPTION OF THE DRAWINGS The present invention will be described in detail with reference to the drawings, wherein the depicted elements are not necessarily shown to scale and the same or similar reference numerals represent the same or similar elements through the several views.

[0022] Figure 1A cross-sectional schematic diagram of a substrate processing apparatus according to some embodiments of the present disclosure is shown. For simplicity and clarity of illustration, some details / subcomponents of the exemplary system are not explicitly labeled / shown in this figure.

[0023] The substrate processing apparatus 100 may be operated to perform a variety of plasma-applied processes, such as etching and / or thinning dielectric insulating materials using plasma. Taking EDS, EPS, or FOPLP packaging technology as an example, sometimes it is necessary to thin the dielectric insulating material (such as epoxy molding compound (EMC), ABF build-up film (ABF) and dry film photoresist) to achieve the effect of planarization and / or exposing the grain, or exposing the copper pillar. In addition to being used in the thinning process of the above-mentioned insulating materials, the substrate processing equipment 100 can also be used for removing organic or inorganic residues on the surface, photoresist stripping and ash (Ashing), surface modification (Modification) hydrophilicity or hydrophobicity, surface cleaning (Cleaning), surface activation (Activation), desmear (Desmear), descum (Descum), titanium film etching, SiO2 or Si3N4 film etching, metal oxide film plasma reduction (Plasma Reduction) and other process fields.

[0024] The substrate processing equipment 100 includes a process chamber 110, a substrate carrier 120, and a remote plasma source (RPS) 130. The process chamber 110 defines an internal space V to receive a workpiece to be processed (shown in the current figure). In some embodiments, the workpiece to be processed may be a plate-like object generally referred to as a substrate, which provides mechanical support for electrical components subsequently formed thereon. In some applications, the substrate may be a semiconductor chip (semiconductorwafer). In certain applications, such as panel-level processes (such as the aforementioned FOPLP packaging applications or IC carriers for advanced fine lines), the substrate may be large-size glass, epoxy molding compound (Epoxy Molding Compound, EMC), copper clad laminate (Copper Clad Laminate, CCL), coreless substrate, etc. The exemplary process chamber 110 has a base 111 and a plasma inlet wall 112. The base 111 has a bottom wall 113 and a side wall 114 that together define the internal space V. The plasma inlet wall 112 is configured to enclose the pedestal and receive the product from the remote plasma source 130. In some embodiments, the product from the remote plasma source 130 may be highly active free radicals that are electrically neutral. In the illustrated embodiment, the substrate processing apparatus 100 includes a baffle ring 140. The baffle ring 140 is configured to be fixed between the pedestal 111 and the plasma inlet wall 112.

[0025] The substrate carrier 120 is movably disposed in the internal space V of the process chamber 110 and has a substrate supporting surface 121 facing the plasma inlet wall 112. The substrate carrier 120 (or pedestal) is suitable for supporting the substrate on the top surface (e.g., substrate supporting surface 121) during the process. In some embodiments, the apparatus 100 further comprises one or more lifting devices coupled to the substrate carrier 120, the lifting devices being suitable for moving the substrate carrier 120 at least in a vertical direction (e.g., z direction) to facilitate loading and unloading of the substrate and / or adjusting the distance between the substrate and the plasma inlet wall 112 (the nozzle component). When the substrate carrier 120 is lowered, the lifting pins 150 disposed in the chamber can prop up the substrate, which is convenient for loading and unloading operations of the substrate between the workpiece transfer system and the machine. In some embodiments, the substrate carrier 120 also has an exhaust structure (e.g., a fluid exhaust channel 123). As shown in this embodiment, the exhaust structure 123 is arranged near the outer edge area of ​​the carrier 120, and one or more lateral edges of the carrier are maintained at a position very close to the inner side wall of the corresponding part of the inner cavity (for example, the upper half of the inner cavity wall). When the exhaust / gas extraction device (not shown) is activated, the process byproducts (usually in the form of fine particles or gas) can be moved to the space below the substrate carrier 120 through the exhaust structure 123 arranged at the edge of the substrate carrier 120. As shown in this embodiment, the positioning ring (or cover ring) 129 is arranged around the substrate support surface 121 and is located between the substrate support surface 121 and the exhaust structure 123. In some embodiments, the material of the positioning ring 129 includes insulating materials, such as Al2O3, ZrO2, Si3N4, AlN, machinable ceramics (such as Macro), Quartz, glass, Teflon.

[0026] The plasma inlet wall 112 is configured to close the base 111 having a groove-like structure, thereby sealing the interior space V of the process chamber 110. The plasma inlet wall 112 is in fluid communication with the remote plasma source 130 through an inlet 117 located above the central region of the stage 120, so that the output from the remote plasma source 130 can be guided into the chamber 110. In the illustrated embodiment, the plasma inlet wall 112 includes a cover 115 and a plasma distribution component 116 located between the inlet 117 and the substrate support surface 121. The outer periphery of the cover 115 (or chamber cover) is configured to be sealedly engaged with the top of the surrounding wall of the base 111. The plasma distribution component 116 (or showerhead component, showerhead) is configured to uniformly supply free radicals from the remote plasma source 130 into the process volume. The showerhead component 116 is shown to be disposed in a substantially parallel relationship relative to the substrate stage 120 to facilitate uniform distribution of free radicals on the workpiece. However, the distribution of free radicals is affected by various factors, such as the geometry of the internal space V, the distance between the plasma distribution component 116 and the substrate stage 120, etc. In some embodiments, the distance between the plasma distribution component 116 and the substrate stage 120 is approximately in the range of 10 to 200 mm, such as 30 or 90 mm. In some embodiments, the plasma distribution component 116 and the cover 115 can be made of conductive materials (such as aluminum) and electrically connected to each other. The base 111 can also be made of conductive materials (such as aluminum) and electrically connected to the plasma distribution component 116 and the cover 115.

[0027] The substrate processing apparatus 100 also includes an exhaust / pumping system (not shown) configured to apply a vacuum to the internal space V (or process volume). In some operating scenarios, the operating pressure may be controlled to be between 50 mTorr and 5000 mTorr.

[0028] In some application scenarios, the use of a remote plasma source allows the ions and electrons in the plasma it generates to be blocked outside the process chamber (e.g., the internal space V), allowing free radicals to reach the process chamber through an inlet element (e.g., the plasma inlet wall 112). Free radicals can be used in lower temperature process scenarios. In some application scenarios, when the gas from the gas source 160 reaches a high gas flow rate of several standard liters per minute (SLM), the remote plasma source can achieve a dissociation degree of 95% or more for the process gas. Therefore, in some application scenarios, the remote plasma source can also be regarded as a radical plasma source. In plasma etching, the etching rate of the substrate is proportional to the density of free radicals in the process chamber. Since the free radicals generated by the remote plasma source mainly undergo chemical reactions on the substrate surface, the low heat load and ion bombardment brought about by such processes can reduce the physical damage to the substrate / workpiece during high-speed etching, ashing, desmearing, residual glue removal, surface cleaning or modification or activation treatment.

[0029] The remote plasma source is configured to receive various process gases (e.g., from a gas source 160), such as a fluorine-containing gas (e.g., CF4, CxFy, SF6, NF3, CHF3, or a mixture thereof) and a cleaning gas used for purification (e.g., O2, O3, H2O, H2, He, N2, Ar, or a mixture thereof). Adding N2 can increase the plasma density and extend the radical lifetime. The gas source 160 can controllably provide the gas in an adjustable manner; when the fluorine-containing gas is provided to the remote plasma source, its flow rate can be roughly controlled in the range of 10 to 6000 sccm, for example, between 10 to 3000 sccm, 10 to 2000 sccm, or 10 to 1000 sccm. Similarly, when the cleaning gas is provided to the RPS, its flow rate may be controlled to be approximately in the range of 10 to 6000 sccm, such as 10 to 5000 sccm, 10 to 4000 sccm, 10 to 3000 sccm, 10 to 2000 sccm, or 10 to 1000 sccm.

[0030] The remote plasma source may be an inductively-coupled plasma (ICP) remote plasma source, a capacitively coupled plasma (CCP) remote plasma source, a microwave remote plasma source (Microwave RPS) or a combination thereof. In an embodiment using an inductively coupled remote plasma source (ICP RPS), the driving frequency is approximately 0.4 to 13.56 MHz. In an embodiment using a very high frequency (VHF) capacitively coupled remote plasma source, the driving frequency is approximately 40 to 100 MHz. In an embodiment using a microwave remote plasma source (Microwave RPS), the driving frequency is approximately 900 to 6000 MHz. In an embodiment using an RPS, the output power may be 1 to 3 kW, 1 to 6 kW, 1 to 8 kW, 1 to 10 kW, or 1 to 15 kW.

[0031] In some operating conditions, free radicals from the RPS will undergo a recombination reaction (exothermic reaction) in the delivery pipeline (connected to the RPS and the inlet), raising the temperature of the pipeline. In some cases, a significant increase in the temperature state of the pipeline will excessively wear out the device hardware. For example, overheating will cause damage to the connecting pipe and the vacuum sealing unit (such as an O-ring). In some embodiments, the device is further configured with a cooling structure 180. The cooling structure may include a liquid cooling channel, which is configured to receive a low-temperature fluid (such as water, other liquids or gases) from a fluid supply system. In some embodiments, the delivery pipeline also includes a valve body configured to regulate the gas flow of the pipeline. In some embodiments, the cooling structure 180 may further include or be implemented as a refrigeration chip that contacts the valve body.

[0032] In some embodiments, in addition to the first plasma generating device (including the remote plasma source 130), the apparatus 100 may further include a second plasma generating device (including the intracavity plasma generator described below) disposed in the cavity. In terms of configuration, in some embodiments, the substrate carrier 120 may be configured to be coupled to an electrode member 122 (such as a cable or an electrode rod) and a radio frequency (RF) power source connected thereto. At the same time, the showerhead component (such as the plasma distribution component 116) may be configured to be electrically connected, thereby forming two opposing electrodes of a built-in / intracavity plasma generator with the substrate carrier 120.

[0033] In an embodiment having both the first and second plasma sources, the remote plasma source may be at least one of an inductively coupled remote plasma source (ICP RPS), a capacitively coupled remote plasma source (CCP RPS), and a microwave remote plasma source (Microwave RPS). On the other hand, the aforementioned RF plasma source (i.e., the aforementioned second plasma source) may be a capacitively coupled device. Such plasma generating devices may be used to perform processes such as reactive-ion etching (RIE). In terms of exemplary applications, reactive ion etching may be applied to photoresist ashing, desmearing, desmearing, surface cleaning, modification or activation treatment, copper film nitrogen or argon plasma or its mixed plasma treatment process to remove copper surface oxides and fluorides, or copper surface micro-roughening. In this embodiment, a high-density active free radical is generated by a remote plasma source (first plasma generating device), and a high-frequency bias is applied to the substrate carrier (second plasma generating device). Under the dual effects of chemical etching and physical etching, the etching or plasma processing rate can be greatly improved.

[0034] Generally speaking, in reactive ion etching equipment that only uses a second plasma generating device, it is impossible to adjust the plasma density and ion bombardment energy at the same time. By increasing the RF power, the plasma density and the dissociation rate of the process gas can be increased, thereby increasing the etching rate. However, when the RF power is set too high, the ion bombardment energy will be too large, causing the substrate material to be damaged due to excessive temperature or abnormal arc discharge. In order to avoid damage to the substrate, the setting of the RF power is limited, so that the etching rate of insulating dielectric organic substrates (such as epoxy molding compounds or ABF build-up materials) is only about 0.5 to 1um / min. In contrast, if a composite process equipment including a remote plasma source is used, the plasma density of the free radicals and the energy of the ion bombardment can be adjusted simultaneously. Through the optimization of process parameters, the etching rate can be increased by 100% to 400%.

[0035] In addition, compared to the reactive ion etching equipment that only uses the second plasma source, the composite plasma equipment that uses a remote plasma source can adjust the ion bombardment energy according to the process requirements (for example, as small as no ion bombardment, as large as hundreds of volts of bias), so that the process temperature can be rationalized (reduced). Taking the application of packaging substrates as an example, the application of remote plasma sources can make the temperature of the substrate carrier less than 100°C. In some scenarios, the operating temperature state can be maintained at no more than 50°C. In some scenarios, it is even no more than 30°C. With the miniaturization and high-frequency and high-speed requirements of electronic components, 5G substrate materials, the requirements for temperature control of tiny circuit technology process materials, and the increase in the size of the substrate (such as the aforementioned panel-level process) have made the requirements for plasma uniformity more stringent, making the process more difficult. However, with the high etching performance and appropriate substrate temperature provided by the substrate processing equipment 100 described in the embodiment of the present case, it is beneficial to control the size of fine lines and blind holes, and can replace traditional wet etching and / or grinding processes in many applications, thereby avoiding the problem of chip damage. The high-density free radicals generated by high-density plasma can also increase the etching rate, thereby improving production capacity and yield.

[0036] Figure 2 An enlarged view of a region of a substrate processing apparatus according to some embodiments of the present disclosure is shown. For simplicity and clarity of illustration, some details / subcomponents of the exemplary system are not explicitly labeled / shown in this figure. In some embodiments, Figure 2 for Figure 1 The enlarged view of the part circled by the dotted box (B1).

[0037] In some embodiments, a baffle ring 240 of a substrate processing device has two parts, a partition wall 241 and a flange 242. As shown in the figure, the flange 242 generally extends in a transverse direction (e.g., along the xy plane) and is configured to be fixed between the base 111 and the plasma inlet wall 112. In the illustrated embodiment, the transversely extending surface of the flange provides a close interface between the baffle ring 240 and the chamber 110. The partition wall 241 generally extends in a longitudinal direction (e.g., along the z direction) and is disposed between the side wall 114 of the base 111 and the substrate carrier 120. In the illustrated embodiment, a gap is maintained between the partition wall 241 extending downward from the baffle ring and the inner wall surface of the chamber 110. Overall, the inner side surfaces of the side wall 114 and the baffle ring 240 respectively form "surrounding walls / side ring walls" of different height sections in the chamber of the illustrated process chamber 110 (as shown by sections S1 and S2 in the figure). The inner surface of the surrounding wall defines an inner space V, which has two or more width sections (W1, W2). Figure 2In the cross-sectional schematic diagram of the process chamber 110, the surrounding wall (including the side wall 114 and the baffle ring 240) includes a first section S1 and a second section S2 of unequal widths. The first section S1 is relatively close to the plasma inlet wall 112, and its inner diameter (i.e., the first width W1 shown in the figure) is designed to be slightly larger than the width of the substrate carrier 120 to allow the substrate carrier 120 to enter the range of the first section S1. In some embodiments, the upper chamber area corresponding to the first section S1 forms the process area P of the substrate carrier 120, and the wider and lower subspace corresponding to the second section S2 forms the loading area of ​​the internal space V.

[0038] In one embodiment, the inner surface of the surrounding wall is continuously arranged in the circumferential direction in the first section S1 to substantially prevent the working gas or / and plasma from passing / leaking out of the aforementioned process area P (through the gap between the baffle ring 240 and the edge of the stage 120). When the substrate stage 120 is located in the process area P (for example, in the position shown in FIG. 2 ), after the working gas from the remote plasma source enters the process area P through the plasma distribution component 116, the working gas or / and plasma will be confined in the process area P. In this way, the working gas or / and plasma can be prevented from flowing into the lower subspace below the substrate stage 120, thereby being kept in the process area P. In the illustrated embodiment, the baffle ring 240 / 340 continuously surrounds the outer periphery of the substrate stage 120 to substantially prevent the working gas or / and plasma from passing through the baffle ring 240 / 340. In some embodiments, the longitudinal length (for example, in the z direction) of the first section S1 is not less than 200 mm. This arrangement allows the height of the process area P (i.e., the distance from the substrate support surface to the spray head 116) to reach at least 200 mm. In the illustrated embodiment, the inner diameter W1 is substantially maintained at a predetermined value within the first section S1. Figure 2 In the schematic cross-sectional view of the process chamber 110 described, the inner surface of the partition wall 241 of the retaining ring 240 (as part of the inner surface of the surrounding wall) defines the first section S1, whose longitudinal (eg z-direction) length is set to be greater than 200 mm (eg 220 mm).

[0039] In some embodiments, a port (e.g. Figure 3AThe port 318 of the cavity is disposed in the second section S2 of the surrounding wall. When the substrate carrier 120 moves downward to the range of the second section S2, the operation of loading and / or unloading the substrate can be performed. The inner diameter of the second section S2 (i.e., the second width W2) is greater than the inner diameter W1 of the first section S1. Such a narrow top and wide bottom design is conducive to the operation of loading and / or unloading the substrate. In the illustrated embodiment, the inner diameter difference of the inner side wall of the cavity is formed by an external retaining ring 240 with a different (narrower) inner diameter. In other embodiments, the inner diameter difference between the first section and the second section of the surrounding wall can also be achieved by an integrally formed cavity setting.

[0040] In some embodiments, the substrate stage 120 further includes a fluid channel structure (eg, Figure 3B Exhaust structure 223 / 323 shown). Please also refer to Figure 3B , 3C , the exhaust structure 223 / 323 includes a perforated plate 225 / 325 and exhaust ports 224 / 324 distributed in the edge area of ​​the carrier and placed under the perforated plate 225 / 325. When the exhaust / vacuum device (not shown) is activated, the by-products can move to the space below the substrate carrier 120 (corresponding to the second section S2) through the exhaust structure 223. In some embodiments, the perforations of the perforated plate 225 / 325 are substantially uniformly distributed. The by-products generated after the reaction are able to flow evenly to the subspace below. In some embodiments, the aperture of the perforated plate is approximately in the range of 0.5 to 5 mm, for example 1 mm.

[0041] exist Figure 2 In the illustrated embodiment, the process chamber 110 further includes an exhaust port 213a. Byproducts can be exhausted from the chamber through the exhaust port 213a. The exhaust ports 213a are configured to be adjacent to two opposite sides of the process chamber 110. In the illustrated embodiment, the exhaust port 213a is located below the perforated plate 225 and overlaps with the projection of the perforated plate 224. In some embodiments, the diameter of the exhaust channel (e.g., the exhaust port 213a) is approximately in the range of 25 mm to 150 mm.

[0042] See also Figure 8 The number and location of the exhaust ports can influence / optimize the uniformity of the exhaust. Figure 8 In the illustrated embodiment (the aforementioned perforated plate is not shown), a baffle ring 840 is disposed on the exemplary process chamber 811, and the substrate stage 820 is disposed in the baffle ring 840. The process chamber 811 has four exhaust ports 813a, which are respectively arranged to overlap with the projections of four exhaust ports 824 located at the corners of the substrate stage 820. Such a symmetrical arrangement is conducive to uniform exhaust.

[0043] In the design of the stage position, if the edge of the substrate stage (e.g., the stage 120) is too close to the inner ring surface of the first section S1 (e.g., the inward surface 241 of the retaining ring 240) without maintaining an appropriate spacing, the outer edge of the substrate stage 120 may rub against the inner surface of the first section S1 of the annular wall during the lifting and lowering movement of the substrate stage 120. Such friction may reduce the life of the equipment and may also generate particles that pollute the environment in the chamber. In some embodiments, a gap of appropriate width is reserved between the inner surface of the first section S1 (e.g., the inner surface of the retaining ring 241) and the outer periphery of the substrate stage 120. In some embodiments, the width of the gap is approximately in the range of 0.2 to 0.8 mm, for example, 0.8 mm.

[0044] In some embodiments, the ratio of the hole width of the perforated plate to the width of the gap is approximately in the range of 0.6 to 25. However, if the gap is significantly larger than the aperture of the perforated hole, most of the working gas may flow into the gap, which may cause the uneven distribution of the reaction gas again. In addition, the impact of the operating temperature on the hardware during the operation of the device also needs to be included in the scope of design considerations. For example, the size of the gap between the hardware structures depends on the processing accuracy. However, if a too small gap design (for example, less than 0.8 mm) is adopted, the gap may disappear due to expansion due to the high temperature of the machine during operation. For example, when the device is used to perform some high-temperature processes, it is inevitable that the substrate carrier 120 expands due to the high temperature, so that its outer edge extends to the inner surface of the first section S1. It has been found through testing that the design of the gap size being roughly the same as the aperture size of the perforated hole is conducive to maintaining the uniform distribution of the reaction gas on the substrate carrier 120. In some embodiments, the ratio of the width of the perforated hole of the perforated plate 224 to the width of the gap is approximately in the range of 0.7 to 1.3, for example, 1.25. At the same time, a corresponding heat dissipation device is provided to keep the substrate on the substrate carrier below 140 degrees Celsius, which helps to ensure the quality of the process and maintain the normal operation of the machine.

[0045] On the other hand, the RF return path of the plasma generating device may be obstructed due to the aforementioned carrier gap. In some embodiments, the substrate carrier 120 may be electrically coupled to the process chamber 110 via one or more flexible conductive members (e.g., connector 270) to establish an RF return path. For example, in the illustrated embodiment, one end of the flexible conductive member 270 is electrically connected to the first section S1 of the surrounding wall, and the other end is connected to the substrate carrier 120. In some embodiments, the substrate carrier 120 is electrically coupled to the retaining ring 240 via a plurality of flexible conductive members 270. In some embodiments, the flexible conductive member 270 may be arranged to avoid the outer periphery of the substrate carrier 120 and the inner surface of the retaining ring 240. For example, Figure 2The partition wall 241 shown is spaced apart from the chamber side wall 114. One end of the flexible conductive member 270 is fixed to the wall surface of the partition wall 241 facing the outside of the chamber by a fixing member (e.g., a screw), and the other end is fixed to the surface of the exhaust port 225 at the edge area of ​​the substrate carrier 120. The flexible conductive member 270 has a sufficient length to maintain physical contact with the substrate carrier 120 during the lifting and lowering movement. When the substrate carrier 120 is in the position shown in the figure, the flexible conductive member 270 is suspended between the side wall 114 and the substrate carrier 120.

[0046] The flexible conductive member 270 may be a strip, wire, or cable that provides an RF conductive medium. In some embodiments, the flexible conductive member 270 may be implemented as a flexible strip made of a conductive material, or a flexible strip with a conductive coating. In some embodiments, the material of the flexible conductive member may be a metal, such as copper. In some embodiments, the flexible conductive member may be a composite structure, for example, a heterogeneous metal is plated on the surface of the strip, such as silver plating on a copper strip. In some embodiments, the thickness of the flexible conductive member is not greater than 1 mm, for example, less than 0.6 mm. In some embodiments, the thickness of the flexible conductive member is approximately 0.2 mm. The flexible conductive member 270 may establish an electrical connection between the RF power source and the chamber. The return path of the RF current may be determined based on the electrical properties (e.g., conductivity) and position of the flexible conductive member 270. In addition, the position or spacing distance of multiple flexible conductive members 270 may be further designed to optimize the uniformity of the electric field to improve the distribution uniformity of the process gas / plasma and the process stability.

[0047] Figure 3A A schematic perspective view of a substrate processing apparatus according to some embodiments of the present disclosure is shown. For simplicity and clarity of illustration, some details / subcomponents of the exemplary system are not explicitly labeled / shown in this figure, for example, a plasma inlet wall and a remote plasma source are not shown in this figure. Figure 3B and 3C Schematic diagrams of three-dimensional substrate carriers according to some embodiments of the present disclosure are respectively shown.

[0048] The illustrated base 311 is implemented as a rectangular trough having a rectangular bottom plate and four side walls, thereby defining an internal space V for accommodating the substrate carrier 320. In some embodiments, one of the four side walls of the base 311 is provided with an access port 318 for allowing the substrate to enter or move out of the internal space V. The side wall also has a valve configured to close the access port 318. Before using the device for thinning or plasma treatment (e.g., etching, cleaning, surface activation, etc.) processes, the substrate carrier 320 can be moved to a corresponding position (e.g., corresponding to Figure 2The second section S2 is shown, and the valve is opened to allow the substrate to enter the inner space V, so that the substrate can be placed on the substrate supporting surface 321 of the substrate carrier 320.

[0049] The illustrated substrate support surface 321 is generally rectangular. The substrate stage 320 in the figure is implemented as a rectangle with rounded corners. The substrate processing equipment using the substrate stage 320 is configured to use plasma to process a large area substrate that is generally rectangular. The substrate can include metal, dielectric insulating material, photoresist, silicon wafer, glass and composite materials thereof. The equipment can process rectangular substrates of different sizes, such as substrates with side lengths ranging from approximately 200 mm to 650 mm.

[0050] In some embodiments, the substrate stage 320 includes a channel structure 323 for the reaction gas to pass through. In some embodiments, the channel structure (e.g., exhaust structure) 323 extends along the side of the substrate stage 320 and has a ring-shaped plane pattern formed by a strip-shaped profile. The exhaust structure 323 has a plurality of exhaust ports 324 arranged along the side of the substrate stage 320, so that the substrate supporting surface 321 and the opposite surface thereof are fluidically connected. The exhaust structure 323 also includes a perforated plate 325 disposed above the exhaust ports 324.

[0051] The perforated plate 325 covers the exhaust port 324 and faces the plasma inlet wall (eg Figure 1 The perforated plate 325 is provided with a plurality of substantially uniformly distributed perforations. In some embodiments, the diameter of the perforations of the perforated plate 325 is approximately 0.5 to 5 mm, for example, 1 mm. In some embodiments, the exhaust structure 323 is distributed in a form that is roughly symmetrical to the geometric center of the substrate carrier 320. In some embodiments, the exhaust ports 324 can be equidistantly distributed on two opposite sides of the substrate carrier 320, or on four sides. The symmetrically arranged exhaust structure 323 is conducive to the uniformity of the distribution of free radicals / reactive gases. In the illustrated embodiment, the exhaust ports 324 are distributed not only on the four sides of the substrate carrier 320, but also on the four rounded corners of the substrate carrier 320. In other words, the exhaust structure 323 is arranged along the outer periphery of the substrate carrier 320 and surrounds the substrate supporting surface 321; such a configuration can further ensure the uniformity of the exhaust and reduce the phenomenon of free radicals / reactive gases gathering in the corners.

[0052] exist Figure 3AIn the illustrated embodiment, flexible conductive members 370 are disposed on all four sides of the substrate carrier 320, so that the potential distribution in the cavity can be relatively uniform. In some embodiments, the flexible conductive member 370 is not disposed on the front side / loading port side of the substrate carrier 320 (the side closest to the access port 318 in the x-direction), which is beneficial for the loading and / or unloading operation of the substrate. Figure 3C In the illustrated embodiment, the flexible conductive member 370 is also avoided from being provided on the rear side opposite to the front side, which is beneficial to the uniformity of potential distribution.

[0053] exist Figure 3C In the embodiment shown, the substrate carrier 320 is further provided with a flow channel structure 326 that is bent, extended and buried in the substrate support surface 321. The flow channel structure 326 is configured to receive a fluid (water or other working medium) from a fluid source so as to adjust the temperature state of the substrate located on the substrate support surface 321. For example, in a process using an apparatus for thinning or plasma treatment, the etching rate of the substrate is roughly proportional to the substrate temperature. In the silicon wafer photoresist ashing process, the temperature state of the substrate is, for example, between 250 and 300°C. In contrast, the glass transition temperature of the dielectric insulating material or photoresist of the packaging substrate is only about 150°C. The flow channel structure 321 of the substrate carrier 320 can be used to maintain the temperature state of the substrate to less than about 140°C.

[0054] exist Figure 3C In the embodiment shown, the substrate carrier 320 further includes a support plate 327, which is arranged in a manner substantially parallel to the spray head 116 and is configured to move up and down. The peripheral area of ​​the support plate 327 forms the exhaust port 324 array. The aforementioned multiple flexible conductive members 370 are respectively fixed at multiple exhaust ports surrounding the array. In some embodiments, the support plate 327 includes a conductive material, such as copper. The carrier plate 328 is arranged at the central part of the support plate 327 to form the substrate support surface 321 and the flow channel structure 326. The positioning ring (or cover ring) 329 is arranged around the substrate support surface 321 and is located between the carrier plate 328 and the exhaust port 324. In some embodiments, the positioning ring 329 includes an insulating material, such as Al2O3, ZrO2, Si3N4, AlN, machinable ceramics (such as Macro), Quartz, glass, Teflon. When the support plate 327 moves, the substrate support surface 321 , the exhaust structure 323 , and the flexible conductive member 370 will move synchronously therewith.

[0055] exist Figure 3AThe retaining ring 340 shown has an annular structure, and its inner surface 343 is generally (along the inner periphery) circumferentially continuously arranged. The top view profile of the inner surface 343 is generally rectangular with rounded corners. In some embodiments, the retaining ring 340 has a conductive material, such as aluminum. A sealing component (such as a sealing ring 344) is further arranged on the top surface of the flange 342 of the retaining ring 340 to maintain the airtightness of the cavity. An electromagnetic interference (EMI) shielding element (such as a conductive gasket 345) can also be arranged on the top surface of the flange 342 of the retaining ring 340. Similar or identical sealing components and EMI shielding elements can be selectively arranged at the contact interface between the base 311 and the flange 342. In this embodiment, the base is electrically connected to the cover body via the retaining ring, so that the base, the retaining ring and the cover body are all at ground potential. The ring-type compartment wall 341 shown in the figure is assembled in a sealed manner through multiple components, which is conducive to processing rounded corners at the corner position.

[0056] Figure 4 Schematic diagram of the bottom of the plasma inlet wall according to some embodiments of the present disclosure is shown. For simplicity and clarity of illustration, some details / subcomponents of the exemplary system are not explicitly labeled / shown in this figure. In some embodiments, Figure 4 Along parallel to Figure 1 Top view of section line IV-IV.

[0057] Figure 4 The plasma inlet wall 412 shown has a substantially rectangular cover 415 and a distribution component 416 disposed on the cover 415. The distribution component 416 is substantially rectangular with rounded corners. In some embodiments, the plasma distribution component 416 and the cover 415 can be made of conductive materials (e.g., aluminum) and are electrically connected to each other. The plasma inlet wall 412 has a distribution hole pattern 412a, which is directed toward the substrate carrier (e.g., Figure 1 The distribution hole pattern 412a has a substantially rectangular planar profile. In the illustrated embodiment, the distribution hole pattern 412a has a plurality of distribution holes arranged in rectangular circles, and the rectangular circles (e.g., the rectangular circles marked with dotted lines 417) are concentrically distributed. The distribution holes distributed in concentric rectangles are conducive to the uniform flow of process gases to a roughly rectangular substrate (e.g., a panel-level substrate). In some embodiments, in each circle of rectangularly arranged distribution holes, the spacing between adjacent distribution holes is approximately in the range of 10 to 25 mm. In some embodiments, the spacing is approximately in the range of 10.5 to 21.3 mm. A fixed spacing is conducive to the uniformity of process gases. In some embodiments, the aperture of the distribution hole is not greater than 2 mm, for example, 1.8 mm. The outlet angle / discharge direction of the distribution hole can be set to be parallel to the direction of the lifting and lowering movement of the substrate carrier (e.g., the Z direction).

[0058] In some embodiments, the distribution hole pattern 412a has a central region CR. The central region CR is configured to block ultraviolet light from a remote plasma source (e.g., remote plasma source 130) from directly irradiating the substrate, while preventing free radicals from directly passing through the central region CR to directly reach the substrate surface and etch. For example, in some embodiments, the size of the hole in the central region CR is smaller than the size of the hole in the peripheral region PR surrounding the central region CR to reduce the ultraviolet light and free radicals from the remote plasma source 130 from directly irradiating the substrate. In some embodiments, the hole width range in the central region CR is designed to be less than about 1 mm, such as 0.8 mm. In some embodiments, the hole width in the peripheral region PR may be greater than about 1.5 mm, such as 1.8 mm. In some embodiments, the density of the holes in the central region CR is lower than the density of the holes in the peripheral region. In some embodiments, the direction of the holes in the central region CR may be set to be inclined to the lifting direction (e.g., z direction) of the substrate carrier. In some embodiments, the central region CR is substantially rectangular. In some embodiments, the pattern area width WC accounts for about 8 to 10% of the total pattern area width W of the plasma distribution component 416. If the central region C is too large, it is not conducive to the uniformity of free radicals / process gases; if it is too small, it is not conducive to reducing the ultraviolet light directly irradiating the substrate and the local etching of the central region CR within the projection range of the substrate. In some embodiments, the ratio between the overall pattern coverage and the central pattern size is in the range of about 60 to 120.

[0059] Figure 5 Schematic cross-sectional view of a plasma inlet wall according to some embodiments of the present disclosure is shown. For simplicity and clarity of illustration, some details / subcomponents of the exemplary system are not explicitly labeled / shown in this figure. In some embodiments, Figure 5 Along parallel to Figure 1 Sectional view along section line VV.

[0060] exist Figure 5 The cover 515 of the plasma inlet wall is shown with an inlet 517 configured to receive process gases / radicals from the remote plasma source. In some embodiments, the inlet 517 is disposed in a central region of the cover 515. In some embodiments, the distribution hole pattern (e.g. Figure 4 The central area of ​​the distribution hole pattern 412a) (eg, corresponding to Figure 4The projection of the central region CR of the inlet 517 overlaps the inlet 517, so that the central pattern region CR can block the ultraviolet light directly projected from the remote plasma source. In some embodiments, the projection profile of the inlet 517 in the Z direction (for example, the profile projected on the XY plane) falls within the central region CR. In some embodiments, the inlet has a first geometric plane profile; the central region has a second geometric plane profile, and the first geometric plane profile is different from the second geometric plane profile. In some embodiments, the inlet 517 has a substantially circular plane profile, and the central region CR has a substantially rectangular plane profile.

[0061] In some embodiments, the cover 515 of the plasma inlet wall further includes a flow channel 519 disposed away from the central area of ​​the cover 515, and the flow channel 519 is configured to be fluidically connected to a fluid source 580. In some operating scenarios, when the temperature of the cover 515 is not high enough (e.g., below 30°C), byproducts (e.g., CxHyOz, CxFy) may condense on the cover 515 and / or the spray head (e.g., Figure 1 The formation of such condensate is not conducive to maintaining the cleanliness of the cavity and may also affect the service life of the components. By controlling the temperature setting of the fluid source 580, the temperature state of the cover 515 and / or the spray head can be adjusted to reduce the formation of the aforementioned condensate. For example, in a process of thinning using an apparatus, controlling the temperature setting of the fluid source 580 to maintain the temperature state of the cover 515 at approximately 30 to 100 degrees C can reduce the phenomenon of by-products being formed on the surface of the cover 515 and / or the spray head. The illustrated flow channel can be formed using drilling technology. In other embodiments, the flow channel 519 formed in the cover 515 can be made using a computer numerical control (CNC) process.

[0062] Figure 6 A partial cross-sectional schematic diagram of a plasma inlet wall according to some embodiments of the present disclosure is shown. For simplicity and clarity of illustration, some details / sub-elements of the exemplary system are not explicitly labeled / shown in this figure.

[0063] The plasma inlet wall 612 has a hollow structure that defines a plasma distribution space 619 that is in fluid communication with the inlet 617 and the distribution hole 616b. The output from a remote plasma source (not shown) can enter the plasma distribution space 619 through the inlet 617 and then enter the substrate carrier (e.g. Figure 1 In some embodiments, the hole wall S of the through hole 616b can be further adjusted. 22The top and / or bottom structures are designed to reduce gas turbulence, such as by providing chamfers.

[0064] In some embodiments, the apparatus further comprises a valve module 690, which is arranged in a pipeline connected between a remote plasma source (located upstream of the valve body 690, not shown) and the inlet 617. The valve module 690 is configured to control the fluid connection state between the working area P and the remote plasma source. In some operating conditions, the process of loading and / or unloading the substrate will destroy the vacuum of the working area. At this time, if the remote plasma source remains in a state of fluid connection with the working area, it is easily affected by frequent pressure changes and reduces the service life. By blocking the fluid connection state between the working area and the remote plasma source by the valve module 690, the service life of the remote plasma source can be extended. In some embodiments, the valve body 691 of the valve module 690 can include a metal material, such as aluminum or stainless steel. In some embodiments, the use of stainless steel (SUS) to make the valve body can obtain good material strength, but increase the recombination rate of fluorine radicals after dissociation. Such a recombination reaction (exothermic reaction) causes the valve body temperature to rise, making the seal in the SUS valve body more easily damaged due to being in a high temperature state. In some embodiments, in order to reduce the recombination of the dissociated fluorine free radicals after contact with the inner surface of the SUS valve body, the surface of the valve body and / or the connecting pipe exposed to the free radical environment (such as the inner surface 693) can be plated with a layer of Teflon (PTFE). This setting can help reduce the recombination rate of the dissociated fluorine free radicals and slow down the erosion of the valve body by the fluorine free radicals. In some embodiments, the valve body and the connecting pipe can be aluminum alloy, and the surface is further anodized. This surface treatment can help reduce the recombination rate of fluorine free radicals. In some embodiments, the valve body module further has a cooling structure. The cooling structure includes a flow channel 692 buried in the valve body 691, and the flow channel 692 is configured to receive a low-temperature fluid from a fluid source. In some embodiments, the cooling structure may further include a cooling chip contacting the valve body. In some embodiments, the valve body may be a vacuum valve such as a ball valve or a gate valve for regulating gas circulation (for example, shutting off the atmospheric environment and the vacuum environment).

[0065] In the illustrated embodiment, the plasma inlet wall 612 has a cover 615 and a plasma distribution component 616. The cover 615 is configured to establish a closed state of the process chamber. In the illustrated embodiment, a shower head (such as the plasma distribution component 616) is detachably mounted on the cover 615. The plasma distribution component 616 is formed with a distribution hole pattern 616a and is disposed in the flow path of the reaction gas (from the RPS), which is designed to uniformly guide the output of the RPS to the substrate surface. The plasma distribution component 616 can be configured between the inlet 617 and the substrate carrier. In the embodiment shown in the figure, the plasma distribution component 616 is configured on one side of the inlet 617 (i.e., facing the inner side of the plasma distribution space 619) and facing the substrate carrier (e.g. Figure 1 In the illustrated embodiment, the plasma distribution component 616 is narrower than the process area P. Thus, the boundary between the plasma distribution component 616 and the cover 615 (e.g., the side S11 of the spray head) falls within the projection range of the process area P. In some embodiments, the spray head 616 may be configured to be wider than the process area P so that the boundary between the spray head 616 and the cover 615 avoids the workpiece carrying area. Such a configuration can reduce the influence of dust generated between the hardware components of the device (e.g., the locking components used to hold the spray head 616 and the cover 615) on the substrate carrier. In the illustrated embodiment, the plasma inlet wall 612 adopts a two-piece design (i.e., the plasma distribution component 616 and the cover 615). In other embodiments, the plasma distribution component and the cover may be integrally formed.

[0066] In some embodiments, the surface of the spray head (e.g., the plasma distribution component 616) may have an oxide layer to inhibit the recombination of adjacent free radicals to maintain the activity of the free radicals. However, the oxide layer generally has a large surface resistance value and is not conducive to establishing an RF circuit. In some embodiments, the interface S1 between the plasma distribution component 616 and the cover body 615 is formed with a surface resistance value that is smaller than the surface area S2 of the plasma distribution component 616 exposed to the plasma distribution space. Such a design can establish an RF circuit through the spray head, the cover body, the surrounding wall (e.g., its retaining ring), the flexible conductive member, the substrate carrier, and the RF power supply. The illustrated interface S1 has a side portion S 11 And the top part S 12 In some embodiments, the surface area S2 of the plasma distribution component 616 exposed to the plasma distribution space 619 includes an area S2 of the top surface of the plasma distribution component 616 (not in contact with the cover 615). 21 , and the area S defining the wall of the distribution hole 616b 22In some embodiments, the surface resistance value of the surface area S3 of the plasma distribution component 616 facing the substrate carrier is also smaller than the surface resistance value of the surface area S2. This is more conducive to the establishment of the radio frequency circuit.

[0067] In some embodiments, the spray head 616 is made of a conductive material, such as metal. In some embodiments, the spray head 616 can be made of aluminum. In some methods of manufacturing a spray head, an aluminum plate can be anodized to form an oxide layer on the surface of the aluminum plate. Then, the aluminum plate having the oxide layer is anodized on the entire bottom surface (e.g., surface area S3) and the side surface (e.g., surface area S 11 ) and the peripheral portion of the top surface (e.g., surface area S 12 ) so that its surface resistance value is lower than the top surface of the aluminum plate (e.g., surface area S 21 For example, the oxide layer on the bottom, side and top edges can be reduced or removed by surface treatment such as grinding or etching, thereby forming a sprinkler head with different surface characteristics. In some embodiments, the entire bottom surface (e.g., surface area S3) and side surfaces (e.g., surface area S 11 ) has a metallic luster. In some embodiments, the peripheral portion of the top surface of the spray head 616 (e.g., the surface area S 12 ) has a metallic luster. In some embodiments, the portion surrounded by the peripheral portion (e.g., the surface area S 21 ) has no metallic luster and has a relatively dark color, such as earth tones.

[0068] Figure 7 The experimental data of some embodiments of the present disclosure are shown. The left figure (a) shows the process results produced by a spray head without surface treatment; the right figure (b) shows the process results produced by a spray head with surface treatment as described above (e.g. Figure 6 The process results obtained by using the spray head 616 of the left figure (a) or the right figure (b) correspond to the positions of the etching surface of the rectangular substrate. The relative ratio of the etching rate measured in the experiment is presented by filling each grid block with different gray levels. Specifically, Figure 7 The percentage range shown on the right represents the percentage range obtained relative to the reference etch rate (um / min), which is expressed in a manner corresponding to different grayscales. It can be observed in the data that compared to the aluminum sprinkler head without surface treatment, the sprinkler head with different surface characteristics (such as Figure 6The spray head 616 can significantly reduce the unevenness of the etching rate on the substrate surface. For example, the dotted box marked in the left figure (a) or the right figure (b) shows an area with a relatively small etching ratio range (0-20%, that is, an area with a relatively uniform etching rate distribution). As can be seen from the figure, the dotted box in the right figure (b) shows a larger area. After calculation, the use of the spray head disclosed in the embodiment of the present case (for example Figure 6 The spray head 616 can reduce the non-uniformity of the etching rate on the substrate surface to less than 15%, and further to less than 10%.

[0069] Thus, one aspect of the present disclosure provides a substrate processing device, which includes a process chamber and a substrate carrier. The process chamber has a plasma inlet wall and a surrounding wall. The plasma inlet wall is configured to receive free radicals from a remote plasma source. The surrounding wall has an inner surface, and the inner surface defines an internal space to receive a substrate. The substrate carrier can be raised and lowered in the internal space of the process chamber and has a substrate supporting surface facing the plasma inlet wall. The surrounding wall has a first section and a second section in a cross section of the process chamber. The first section corresponds to a process area of ​​the substrate carrier and has a first spacing width. The second section is farther away from the plasma inlet wall than the first section and has a spacing width greater than the first spacing width.

[0070] In some embodiments, the substrate stage includes an exhaust structure having a strip-shaped planar profile. The exhaust structure has a plurality of exhaust ports distributed along the outer periphery of the substrate stage so that the substrate supporting surface and the opposite surface thereof are fluidically connected; and a perforated plate facing the plasma inlet wall and disposed above the exhaust ports, the perforated plate having a plurality of substantially uniformly distributed perforations.

[0071] In some embodiments, when the substrate carrier is located in the process area, a gap is formed between the outer periphery of the substrate carrier and the first section of the surrounding wall. The width of the perforation of the perforated plate and the width of the gap are substantially the same.

[0072] In some embodiments, the substrate carrier is electrically coupled to the first section of the surrounding wall through a plurality of flexible conductive members.

[0073] In some embodiments, a retaining ring disposed between the process chamber and the substrate stage forms the first section, the retaining ring having an inner surface, and the inner surface of the retaining ring forms a portion of an inner surface of the surrounding wall.

[0074] In some embodiments, the plasma inlet wall has a distribution hole pattern facing the substrate stage, and the distribution hole pattern has a substantially rectangular planar profile.

[0075] In some embodiments, the plasma inlet wall has an inlet configured to receive free radicals from the remote plasma source and having a first geometric planar profile. A central area of ​​the distribution hole pattern is projected over the inlet, and the central area has a second geometric planar profile. The first geometric planar profile is different from the second geometric planar profile.

[0076] In some embodiments, the holes in the central region of the dispensing hole pattern are smaller in size than the holes in the peripheral region surrounding the central region.

[0077] In some embodiments, the plasma inlet wall has a hollow structure, and the hollow structure defines a plasma distribution space. The distribution hole pattern is formed in a plasma distribution component, and the plasma distribution component is arranged on one side of the inlet and faces the substrate carrier. The surface resistance value of the surface area of ​​the plasma distribution component exposed to the plasma distribution space is greater than the surface resistance value of the surface area of ​​the plasma distribution component facing the substrate carrier.

[0078] In some embodiments, the plasma inlet wall has a cover configured to establish a closed state of the process chamber. The plasma distribution component is detachably mounted on the cover. The surface resistance of the interface between the plasma distribution component and the cover is smaller than the surface resistance of the surface area of ​​the plasma distribution component exposed to the plasma distribution space.

[0079] One aspect of the present disclosure provides a substrate processing device, comprising a process chamber and a substrate carrier. The process chamber defines an internal space for receiving a substrate. The process chamber has a base, a plasma inlet wall and a baffle ring. The plasma inlet wall is configured to enclose the base and receive free radicals from a remote plasma source. The baffle ring is disposed between the base and the plasma inlet wall. The substrate carrier is movably disposed in the internal space of the process chamber and has a substrate supporting surface facing the plasma inlet wall. In a cross section of the process chamber, the width of the process area of ​​the substrate carrier defined by the inner surface of the baffle ring is narrower than the inner diameter width of the base.

[0080] In some embodiments, the substrate stage includes an exhaust structure configured to surround the substrate support surface and move synchronously with the substrate support surface. The exhaust structure has: a plurality of exhaust ports arranged along the outer periphery of the substrate stage to enable fluid communication between two opposite surfaces of the substrate support surface; and a perforated plate facing the plasma inlet wall and disposed above the exhaust ports, the perforated plate having a plurality of substantially uniformly distributed perforations.

[0081] In some embodiments, when the substrate carrier is located in the process area, a gap is formed between the outer periphery of the substrate carrier and the retaining ring. The width of the perforated plate and the width of the gap are substantially the same.

[0082] In some embodiments, the substrate carrier is electrically coupled to the retaining ring via a plurality of flexible conductive components.

[0083] In some embodiments, the plasma inlet wall has a distribution hole pattern facing the substrate stage, and the distribution hole pattern has a substantially rectangular planar profile.

[0084] In some embodiments, the plasma inlet wall has an inlet configured to receive output from the remote plasma source. The central region of the distribution hole pattern overlaps the inlet, and the holes in the central region are smaller in size than the holes in the peripheral region surrounding the central region.

[0085] In some embodiments, the central region has a generally rectangular planar profile. The inlet has a generally circular planar profile.

[0086] In some embodiments, the plasma inlet wall has a hollow structure, and the hollow structure defines a plasma distribution space. The distribution hole pattern is formed in a plasma distribution component, and the plasma distribution component is arranged on one side of the inlet and faces the substrate carrier. The surface resistance value of the surface area of ​​the plasma distribution component exposed to the plasma distribution space is greater than the surface resistance value of the surface area of ​​the plasma distribution component facing the substrate carrier.

[0087] In some embodiments, the plasma inlet wall has a cover configured to establish a closed state of the process chamber. The plasma distribution component is detachably mounted on the cover. The surface resistance of the interface between the plasma distribution component and the cover is smaller than the surface resistance of the surface area of ​​the plasma distribution component exposed to the plasma distribution space.

[0088] In some embodiments, the inlet is disposed in a central region of the cover. The cover of the plasma inlet wall further comprises a flow channel disposed away from the inlet.

[0089] However, what is described above is only an embodiment of the present invention and should not be used to limit the scope of implementation of the present invention. All simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still within the scope covered by the patent of the present invention.

[0090] Description of Reference Numerals

[0091] 100: Substrate manufacturing equipment

[0092] 110: Process chamber

[0093] 111, 311: base

[0094] 112, 412: Plasma inlet wall

[0095] 113: Bottom wall

[0096] 114: Sidewall

[0097] 115, 415, 615: Cover

[0098] 116, 416, 616: Plasma distribution components

[0099] 416a, 616a: Distribution hole pattern

[0100] 616b: Distribution hole

[0101] 117, 617: Entrance

[0102] 318: Inbound and Outbound Ports

[0103] 619: Plasma Distribution Space

[0104] 120: Substrate carrier

[0105] 121: Substrate support surface

[0106] 122: Electrode components

[0107] 123, 223, 323: Exhaust structure

[0108] 224, 324: Perforated plate

[0109] 225, 325: Exhaust port

[0110] 326: Runner structure

[0111] 327: Lifting platform

[0112] 328: Carrier board

[0113] 130: Remote Plasma Source

[0114] 140, 240, 340: retaining ring

[0115] 241, 341: Partition wall

[0116] 242, 342: flange

[0117] 343: Inner surface

[0118] 344: Sealing member

[0119] 345: EMI shielding components

[0120] 150: Lifting pin

[0121] 160: Gas source

[0122] 270: Flexible conductive parts

[0123] 180: Cooling element

[0124] 690: Valve body module

[0125] 691: Valve body

[0126] V: Internal space

[0127] P: Process area

[0128] CR: Central Region

[0129] PR: Surrounding area

[0130] S1: Surface

[0131] S 11 , S 12 :area

[0132] S2: Surface

[0133] S 21 , S 22 :area

[0134] S3: Surface.

Claims

1. A substrate processing equipment, characterized in that: Include: Process chamber with: a plasma inlet wall configured to receive output from a remote plasma source; a surrounding wall having an inner surface defining an interior space for receiving a substrate; and A substrate carrier, which is escalably disposed in the inner space of the process chamber and has a substrate supporting surface facing the plasma inlet wall; wherein the substrate carrier includes an exhaust structure having a planar profile; Wherein, the exhaust structure has: A plurality of exhaust ports are distributed along the outer periphery of the substrate stage to enable fluid communication between the substrate support surface and its opposite surface, and A perforated plate, disposed facing the plasma inlet wall and above the exhaust port, the perforated plate having a plurality of substantially evenly distributed perforations; Wherein, the surrounding wall has a cross section of the process chamber. A first section corresponds to a process area of ​​the substrate stage and has a first width, and A second section, which is further away from the plasma inlet wall than the first section and has a width greater than the first width; Wherein, when the substrate carrier is located in the process area, a gap is formed between the outer periphery of the substrate carrier and the first section of the surrounding wall; Wherein, the ratio of the width of the perforation of the perforated plate to the width of the gap is in the range of 0.7 to 1.3; The substrate carrier is electrically coupled to the first section of the surrounding wall through a plurality of flexible conductive members.

2. The substrate processing equipment according to claim 1, wherein: in, A retaining ring disposed between the process chamber and the substrate carrier forms the first section. The retaining ring has an inner surface, and the inner surface of the retaining ring forms a part of the inner surface of the surrounding wall.

3. The substrate processing equipment according to claim 1, characterized in that: in, The plasma inlet wall has a distribution hole pattern facing the substrate stage, and the distribution hole pattern has a substantially rectangular planar profile.

4. The substrate processing equipment according to claim 3, wherein: in, The plasma inlet wall has an inlet configured to receive output from the remote plasma source and having a first geometric planar profile; wherein a projection of a central region of the distribution hole pattern overlaps the inlet, and the central region has a second geometric plane profile; The first geometric plane profile is different from the second geometric plane profile.

5. The substrate processing equipment according to claim 4, wherein: in, The holes in the central region of the dispensing hole pattern have smaller sizes than the holes in the peripheral region surrounding the central region.

6. The substrate processing equipment according to claim 3, wherein: in, The plasma inlet wall has a hollow structure, and the hollow structure defines a plasma distribution space; Wherein, the distribution hole pattern is formed in a plasma distribution component, and the plasma distribution component is arranged on one side of the inlet and faces the substrate carrier; Wherein, a surface area of ​​the plasma distribution component exposed to the plasma distribution space has a larger surface resistance value than a surface area thereof facing the substrate carrier.

7. The substrate processing equipment according to claim 6, wherein: in, The plasma inlet wall has a cover, and the cover is configured to establish a closed state of the process chamber; Wherein, the plasma distribution component is detachably mounted on the cover; The surface resistance value of the interface between the plasma distribution component and the cover body is smaller than the surface resistance value of the surface area of ​​the plasma distribution component exposed to the plasma distribution space.

Images