Bonding method for deep pad wafer and application thereof

Abstract

The application provides a bonding process of a deep pad wafer and application thereof. The bonding process first contacts a glass substrate with bonding glue and a wafer, then performs pretreatment, and finally fills the bonding glue on the glass substrate into a pad pit of the wafer under the condition of temperature rise and solidifies, so as to complete the bonding of the deep pad wafer. Through limiting the pretreatment to include twice vacuum extraction and once vacuum breaking, air remaining in the pad pit is effectively removed before solidification, the problems of holes and residual glue in the wafer after solidification are fundamentally avoided, the defective rate of the deep pad bonded wafer product is reduced, the stability of the bonding process is improved, and a new process method is provided for the bonding of the deep pad wafer.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor process, and particularly relates to a bonding process of deep Pad wafer and application thereof. BACKGROUND

[0002] The miniaturization and multi-functional integration of integrated circuit process and electronic components promote the development of micro-electro-mechanical system technology. Among them, the three-dimensional integration technology based on through silicon via can greatly reduce the chip size, improve the interconnection density and electrical performance by making vertical three-dimensional integration, and has a broad application prospect in the fields of network big data and memory manufacturing, and MEMS system. Permanent wafer bonding is a key technology for three-dimensional stacking and interconnection in three-dimensional electronic packaging. Permanent bonding process reduces the occupied area and greatly improves the product performance. Wafer level adhesive bonding belongs to wafer bonding with an intermediate layer, and the bonding quality will directly determine whether the subsequent process will appear corrosion and over-etching phenomenon.

[0003] However, at present, the bonding process between wafer level packaging glass and CIS wafer still has difficulties and challenges. Wafer level CIS adhesive bonding process is facing challenges brought by CIS front-end manufacturing process. In the CIS wafer, the logic chip circuit and storage circuit are prepared beside and below the photosensitive area, and are led out to the metal Pad beside the photosensitive area through the metal interconnection line. The depth of the Pad manufactured by different front-end processes is not the same.

[0004] The existing wafer-level adhesive bonding technical solution is mainly based on the traditional technology of preheating the product, vacuumizing, increasing temperature and pressure, then holding temperature and pressure, and finally decreasing temperature and pressure. CN106298452A discloses a wafer bonding method based on array point pressure, which comprises: based on the traditional wafer bonding method, a point pressure device is used to change the simultaneous bonding mode of each point in the plane of the traditional wafer bonding method into an asynchronous bonding mode of each point in the plane. The point pressure bonding method disclosed in the invention comprises: using a thermal pressure bonding method to prepare the wafer to be bonded, selecting the size of the single bonding point of the point pressure device, dividing the bonding area into equal array points according to the size of the single bonding, and using the point pressure device to implement bonding at a certain temperature and pressure according to the array points in the actual bonding process. The point pressure bonding device used in the invention has low manufacturing cost and simple operation, and the point pressure bonding method has the characteristics of selectivity of the bonding area, which can meet the needs in some specific application fields. Although the one-step temperature increasing direct bonding method used in this technology rarely causes voids, bubbles and other phenomena in the permanent bonding adhesive layer of the wafer Pad with a depth of <1 μm, when the depth of the wafer Pad is >1 μm, the bubbles in the deep Pad cavity are difficult to control, and it is difficult to fill the Pad recess with the bonding adhesive before the bonding adhesive is solidified within the limited bonding time, which may cause abnormal product quality after bonding, such as bubbles, residues or seepage, and seriously affect the yield of the product.

[0005] Therefore, it is an urgent technical problem in the field to develop a bonding process suitable for deep Pad wafers. SUMMARY

[0006] In view of the deficiencies of the prior art, the purpose of the present application is to provide a bonding process for deep Pad wafers and its application. The bonding process effectively removes the air in the Pad recess through two vacuumizing operations and one vacuum breaking operation, fundamentally avoids the problems of voids and residue adhesive in the solidified bonding adhesive, and has high stability, thereby providing a new process method for adhesive bonding of deep Pad wafers.

[0007] To achieve the purpose of the invention, the following technical solutions are adopted:

[0008] In a first aspect, the present application provides a bonding process for deep Pad wafers, which comprises: contacting a glass substrate with bonding adhesive and a wafer, pretreating, filling the bonding adhesive on the glass substrate into the Pad recess of the wafer under the condition of increasing temperature and solidifying, and completing the bonding of the deep Pad wafer.

[0009] The pretreatment method comprises: sequentially performing first vacuumizing, vacuum breaking and second vacuumizing on the system to complete the pretreatment.

[0010] The bonding process provided by the present application first contacts the glass substrate with bonding glue and the wafer (for example, the contact can be selected in the bonding cavity of the bonding machine, and the "system" in the subsequent vacuumizing refers to the bonding cavity), and the structure schematic diagram of the glass substrate with bonding glue and the wafer before pretreatment in the bonding process provided by the present application is shown in Figure 1 , wherein 1 represents the glass substrate, 2 represents the dam glue, the dam glue 2 is generally photoresist, 3 represents the bonding glue, 4 represents the wafer substrate, 5 represents the Pad layer, 6 represents the photosensitive area, and 7 represents the Pad pit. After the contact, the pretreatment is performed, and the pretreatment is mainly to remove the air in the Pad pit of the wafer, to prevent the subsequent bonding glue from being filled into the Pad pit and to prevent the air bubbles from being generated in the curing process. For the deep Pad wafer, a single vacuumizing cannot achieve the effect of completely removing the air bubbles, and thus two vacuumizings and one vacuum breaking are required. The first vacuumizing makes the system (bonding cavity) in a certain vacuum state, and also makes the Pad pit of the wafer in a vacuum state. Since the Pad pit is sealed, the vacuum degree changes slowly, which is helpful to expel the air bubbles in the pit. Subsequently, the vacuum is broken to quickly restore the bonding cavity to the atmospheric pressure, while the Pad pit of the wafer is still in the vacuum state. By using the pressure difference, the wafer glue can reach the Pad pit under the pressure, so that the volume of the Pad pit is reduced, and the air in the Pad pit can be further squeezed out. Finally, the second vacuumizing is helpful to further expel the squeezed air bubbles, so as to fundamentally reduce or even eliminate the generation of the Pad air bubbles in the subsequent bonding process, and thus the yield of the bonded wafer product is reduced. After the pretreatment is completed, the system is directly kept in the vacuum condition for further heating, so as to further fill the bonding glue on the glass substrate into the Pad pit of the wafer and to cure, so as to complete the bonding of the deep Pad wafer. The structure schematic diagram of the glass substrate with bonding glue and the wafer after the bonding process provided by the present application is completed is shown in Figure 2 , wherein 1 represents the glass substrate, 2 represents the dam glue, the dam glue 2 is generally photoresist, 3 represents the bonding glue, 4 represents the wafer substrate, 5 represents the Pad layer, 6 represents the photosensitive area, and 7 represents the Pad pit. Figure 2 It can be seen that the bonding glue 3 has been completely filled into the Pad pit of the wafer substrate 2.

[0011] It should be noted that the "bonding process of the deep Pad wafer" in the present application refers to the wafer with the Pad pit depth > 1 μm.

[0012] Preferably, the bonding glue comprises two-component epoxy resin glue.

[0013] Preferably, the wafer comprises a wafer substrate and a Pad layer deposited in the pit of the wafer substrate.

[0014] Preferably, the wafer substrate comprises a silicon substrate, a ceramic substrate, a glass substrate or an integrated circuit chip substrate.

[0015] Preferably, the material of the Pad layer comprises a metal material or an alloy material.

[0016] Preferably, the metal comprises any one of gold, copper, aluminum or nickel.

[0017] Preferably, the vacuum degree of the system after the first vacuumization is 1-200 Pa, such as 20 Pa, 40 Pa, 60 Pa, 80 Pa, 100 Pa, 120 Pa, 140 Pa, 160 Pa or 180 Pa, etc.

[0018] Preferably, the vacuum degree of the system after the second vacuumization is 0.01-1 Pa, such as 0.05 Pa, 0.1 Pa, 0.2 Pa, 0.3 Pa, 0.4 Pa, 0.5 Pa, 0.6 Pa, 0.7 Pa, 0.8 Pa or 0.9 Pa, etc.

[0019] Preferably, the pre-treatment is performed under heating.

[0020] Preferably, the temperature of the heating is 30-35℃, such as 30.5℃, 31℃, 31.5℃, 32℃, 32.5℃, 33℃, 33.5℃, 34℃ or 34.5℃, etc.

[0021] As a preferred technical solution of the present application, performing the pre-treatment under the condition of a temperature of 30-35℃ helps to further extrude the bubbles in the Pad pits, and also makes the bonding glue keep low viscosity to offset the residual glue caused by the pressure difference after breaking the vacuum.

[0022] Preferably, the method of the temperature rising is stage-wise temperature rising.

[0023] Preferably, the method of the stepwise temperature rising specifically comprises: first heating the system to 60-70℃ (for example, 61℃, 62℃, 63℃, 64℃, 65℃, 66℃, 67℃, 68℃ or 69℃, etc.), keeping the temperature for 1-3 min (for example, 1.2 min, 1.4 min, 1.6 min, 1.8 min, 2 min, 2.2 min, 2.4 min, 2.6 min or 2.8 min, etc.), and then second heating the system to no less than 90℃ (for example, 91℃, 92℃, 93℃, 94℃, 95℃, 96℃, 97℃, 98℃ or 99℃, etc.), keeping the temperature for no less than 15 min (for example, 16 min, 17 min, 18 min, 19 min, 20 min, 21 min, 22 min, 23 min, 24 min or 25 min, etc.), to complete the stepwise temperature rising.

[0024] As the preferred technical solution of the present application, the step of filling the bonding glue into the Pad recess and curing is completed under the stepwise temperature rising and vacuum condition. The bonding is carried out under vacuum, which can promote the bubble in the recess position of the Pad in the wafer to be discharged, and can prevent other additional chemical reactions from occurring during the bonding of the glue. Meanwhile, the stepwise temperature rising is adopted to complete the bonding. The first temperature rising makes the system reach 60-70℃, at which the flowability and activity of the bonding glue are best, which is beneficial to the bonding machine to fill the bonding glue into the Pad recess. The time of controlling the system at 60-70℃ is 1-3 min, which can avoid the problem that the flow rate of the bonding glue is too high at this temperature, and then flows into the photosensitive area on the wafer, affecting the imaging of the chip, and can also ensure that the bonding glue is completely filled into the Pad recess, without cavity.

[0025] Preferably, the temperature rising rate of the first temperature rising is 10-20℃ / min, for example, 11℃ / min, 12℃ / min, 13℃ / min, 14℃ / min, 15℃ / min, 16℃ / min, 17℃ / min, 18℃ / min or 19℃ / min, etc.

[0026] As the preferred technical solution of the present application, the temperature rising rate of the first temperature rising is 10-20℃ / min, which can ensure that the bonding glue flows smoothly into the Pad recess, while avoiding the situation that the bonding glue on the entire coffer flows into the photosensitive area due to the too high flow rate of the bonding glue, and then causes pollution.

[0027] Preferably, the second temperature rising rate is 30-40℃ / min, for example, 31℃ / min, 32℃ / min, 33℃ / min, 34℃ / min, 35℃ / min, 36℃ / min, 37℃ / min, 38℃ / min or 39℃ / min, etc.

[0028] As a preferred technical solution, the bonding process comprises: contacting the glass substrate with the bonding glue and the wafer, and then pre-treating, wherein the pre-treating comprises: first vacuumizing the system to a vacuum degree of 1-200 Pa, breaking the vacuum to restore the system to atmospheric pressure, and second vacuumizing the system to a vacuum degree of 0.01-1 Pa, completing the pre-treating; then filling the bonding glue on the glass substrate into the Pad recess in the wafer and solidifying under the conditions of stepwise temperature rising and a vacuum degree of 0.01-1 Pa, wherein the stepwise temperature rising method comprises: first temperature rising the system to 60-70℃, keeping warm for 1-3 min, and then second temperature rising the system to not less than 90℃, keeping warm for not less than 15 min, completing the stepwise temperature rising, and completing the bonding of the deep Pad wafer.

[0029] In the second aspect, the application provides an application of the bonding process of the deep Pad wafer in chip manufacturing.

[0030] Compared with the prior art, the application has the following beneficial effects:

[0031] (1) The bonding process of the deep Pad wafer provided by the application firstly contacts the glass substrate with the bonding glue and the wafer, then pre-treats, and finally fills the bonding glue on the glass substrate into the Pad recess in the wafer and solidifies under the condition of temperature rising, and completes the bonding of the deep Pad wafer; by limiting the pre-treating to comprise the steps of twice vacuumizing and once breaking the vacuum, the problems of holes and residual glue in the wafer after solidification are fundamentally eliminated, the stability of the bonding process is higher, and the operation is simple and convenient, which can meet the large-scale production demand.

[0032] (2) As a preferred technical solution of the application, the bonding process adopts the stepwise temperature rising mode in combination with the pre-treating step, changes the traditional one-step temperature rising bonding process, solves the problems of glue overflow, residual glue and bubbles (holes) that are prone to occur in the bonding process, can make the glue overflow rate of the obtained bonded wafer product be as low as 0-2%, the residual glue rate be as low as 0-2%, and the bubble rate be as low as 1-4%, effectively improves the yield of the product, and provides a new idea for the bonding process of the deep Pad wafer (Pad depth >1 μm). BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1A structure schematic diagram of a glass substrate with bonding glue and a wafer in contact before a bonding process provided by the present application;

[0034] Figure 2 A structure schematic diagram of a glass substrate with bonding glue and a wafer in contact after a bonding process provided by the present application;

[0035] Wherein, 1-glass substrate, 2-dam glue, 3-bonding glue, 4-wafer substrate, 5-pad layer, 6-photosensitive area, 7-pad pit. DETAILED DESCRIPTION

[0036] The technical solutions of the present application will be further described by specific embodiments. Those skilled in the art should understand that the embodiments are only to help understand the present application, and should not be regarded as specific limitations of the present application.

[0037] Unless otherwise specified, the specifications and parameters of the devices such as glass substrate and wafer used in the specific embodiment part are the same.

[0038] Embodiment 1

[0039] A bonding process of a deep pad wafer, specifically comprising the following steps:

[0040] (1) Contact the glass substrate with epoxy resin bonding glue and the wafer in the bonding cavity of the bonding machine, with the glass substrate with epoxy resin bonding glue on the lower side, directly contacting the lower disc of the bonding machine, and then pre-treating in the bonding cavity. The pre-treatment specific operation includes: setting the lower disc temperature to 33℃, first vacuumizing the bonding cavity to a vacuum degree of 100 Pa, breaking the vacuum to restore the bonding cavity to standard atmospheric pressure, and then second vacuumizing the bonding cavity to a vacuum degree of 0.5 Pa, completing the pre-treatment;

[0041] (2) Keep the vacuum degree at 0.5 Pa, and fill the epoxy resin glue on the glass substrate into the pad pit in the wafer (push the lower disc to the upper disc) and solidify under the condition of stepwise temperature rise. The stepwise temperature rise method includes: first heating the system to 65℃ at a heating rate of 15℃ / min, and keeping warm for 2 min, and then second heating the system to 90℃ at a heating rate of 35℃ / min, and keeping warm for 15 min, completing the bonding of the deep pad wafer.

[0042] Embodiment 2

[0043] A bonding process of a deep pad wafer, specifically comprising the following steps:

[0044] (1) the glass substrate with epoxy bonding glue and wafer are contacted in the bonding cavity of the bonding machine, the glass substrate with epoxy bonding glue is located at the lower side, directly contacted with the lower disc of the bonding machine, the wafer is clamped on the clamp of the upper disc, and then pretreatment is carried out, the pretreatment specifically comprises: setting the temperature of the lower disc to 30 DEG C, first vacuumizing the bonding cavity to a vacuum degree of 200 Pa, breaking the vacuum to restore the standard atmospheric pressure of the bonding cavity, and second vacuumizing the bonding cavity to a vacuum degree of 1 Pa, completing the pretreatment;

[0045] (2) the vacuum degree is kept at 1 Pa, and the epoxy resin glue on the glass substrate is filled into the Pad pits in the wafer (the lower disc is pushed to the upper disc) and solidified under the condition of stepwise temperature rise, the stepwise temperature rise method comprises: first heating the system to 60 DEG C at a heating rate of 10 DEG C / min, keeping for 3 min, and then second heating the system to 90 DEG C at a heating rate of 30 DEG C / min, keeping for 15 min, completing the bonding of the deep Pad wafer.

[0046] Example 3

[0047] A bonding process of a deep Pad wafer, specifically comprising the following steps:

[0048] (1) the glass substrate with epoxy bonding glue and wafer are contacted in the bonding cavity of the bonding machine, the glass substrate with epoxy bonding glue is located at the lower side, directly contacted with the lower disc of the bonding machine, the wafer is clamped on the clamp of the upper disc, and then pretreatment is carried out, the pretreatment specifically comprises: setting the temperature of the lower disc to 30 DEG C, first vacuumizing the bonding cavity to a vacuum degree of 200 Pa, breaking the vacuum to restore the standard atmospheric pressure of the bonding cavity, and second vacuumizing the bonding cavity to a vacuum degree of 1 Pa, completing the pretreatment;

[0049] (2) the vacuum degree is kept at 1 Pa, and the epoxy resin glue on the glass substrate is filled into the Pad pits in the wafer (the lower disc is pushed to the upper disc) and solidified under the condition of stepwise temperature rise, the stepwise temperature rise method comprises: first heating the system to 60 DEG C at a heating rate of 10 DEG C / min, keeping for 3 min, and then second heating the system to 90 DEG C at a heating rate of 30 DEG C / min, keeping for 15 min, completing the bonding of the deep Pad wafer.

[0050] Example 4

[0051] A bonding process of a deep Pad wafer, which is only different from example 1 in that the temperature of the lower disc is set to room temperature in the pretreatment process of step (1), and other conditions and steps are the same as those of example 1.

[0052] Example 5

[0053] A bonding process of deep Pad wafer, step (1) is same as example 1, the difference is only in step (2) using one-step heating instead of phase heating method, the one-step heating method specifically includes: the system is directly heated to 90℃ at a heating rate of 35℃ / min, and the bonding of the deep Pad wafer is completed after 15 min of holding.

[0054] Example 6

[0055] A bonding process of deep Pad wafer, step (1) is same as example 1, step (2) specifically includes: keeping the vacuum degree at 0.5 Pa, and making the epoxy resin glue on the glass substrate fill into the Pad pit in the wafer and solidify under the condition of stepwise heating, the stepwise heating method includes: the system is first heated to 65℃ at a heating rate of 35℃ / min, and then the system is secondly heated to 90℃ at a heating rate of 35℃ / min, and the bonding of the deep Pad wafer is completed after 15 min of holding.

[0056] Example 7

[0057] A bonding process of deep Pad wafer, step (1) is same as example 1, the difference is only in step (2) phase heating under standard atmospheric pressure, without keeping the vacuum degree at 0.5 Pa, and other conditions and steps are same as example 1.

[0058] Comparative example 1

[0059] A bonding process of deep Pad wafer, the bonding process specifically includes: the glass substrate with epoxy resin bonding glue and the wafer are contacted in the bonding cavity of the bonding machine, the glass substrate with epoxy resin bonding glue is located at the lower side and directly contacted with the lower disc of the bonding machine, the temperature of the lower disc is set to 55℃, the preheating of the machine model is then performed, and then the vacuum is extracted to make the vacuum degree at 0.5 Pa, and the epoxy resin glue on the glass substrate is filled into the Pad pit in the wafer and solidified under the condition of stepwise heating, the stepwise heating method includes: the system is first heated to 65℃ at a heating rate of 15℃ / min, and then the system is secondly heated to 90℃ at a heating rate of 35℃ / min, and the bonding of the deep Pad wafer is completed after 15 min of holding.

[0060] Comparative example 2

[0061] A bonding process of deep Pad wafer, specifically includes the following steps:

[0062] (1) the glass substrate with epoxy bonding glue and wafer in the bonding cavity of the bonding machine, with epoxy bonding glue glass substrate in the lower side, directly and the lower plate contact, then set the temperature of the lower plate to 33℃, the bonding cavity is vacuumed to 0.5 Pa;

[0063] (2) keep the vacuum degree to 0.5 Pa, and make the epoxy resin glue on the glass substrate fill into the pad pit in the wafer and solidify under the condition of stepwise temperature rise, the stepwise temperature rise method comprises the following steps: first temperature rise to 65℃ at the temperature rise rate of 15℃ / min, and keep warm for 2 min, then second temperature rise to 90℃ at the temperature rise rate of 35℃ / min, and keep warm for 15 min, to complete the bonding of the deep pad wafer.

[0064] Comparative example 3

[0065] A bonding process of deep pad wafer, comprising the following steps:

[0066] (1) the glass substrate with epoxy bonding glue and wafer in the bonding cavity of the bonding machine, with epoxy bonding glue glass substrate in the lower side, directly and the lower plate contact, then set the temperature of the lower plate to 33℃, the bonding cavity is vacuumed to 100 Pa;

[0067] (2) keep the vacuum degree to 100 Pa, and make the epoxy resin glue on the glass substrate fill into the pad pit in the wafer and solidify under the condition of stepwise temperature rise, the stepwise temperature rise method comprises the following steps: first temperature rise to 65℃ at the temperature rise rate of 15℃ / min, and keep warm for 2 min, then second temperature rise to 90℃ at the temperature rise rate of 35℃ / min, and keep warm for 15 min, to complete the bonding of the deep pad wafer.

[0068] Comparative example 4

[0069] A bonding process of deep pad wafer, comprising: the glass substrate with epoxy bonding glue and wafer in the bonding cavity of the bonding machine, with epoxy bonding glue glass substrate in the lower side, directly and the lower plate contact, then vacuum to make the vacuum degree to 0.5 Pa, and the system is secondly heated to 90℃ at the temperature rise rate of 35℃ / min, and keep warm for 15 min, to complete the bonding of the deep pad wafer.

[0070] Performance test:

[0071] (1) glue overflow, glue residue and bubble condition: the notch of the wafer is detected in the 6 o'clock direction, 9 regions are selected, 16 chips are selected in each region, a total of 9x144 samples, a polarized low-power microscope (0.75X) is used to observe the chips with glue overflow, glue residue and bubbles, and the proportion is calculated.

[0072] The bonding wafer products prepared by the bonding processes provided in Examples 1-7 and Comparative Examples 1-4 are tested according to the above test method, and the test results are shown in Table 1:

[0073] Table 1

[0074]

[0075] According to the data in Table 1, it can be seen that:

[0076] The bonding products obtained by the bonding process provided by the present application have a very small proportion of glue overflow, glue residue and bubbles, effectively improving the yield of the product. Specifically, the glue overflow rate of the bonding wafer products prepared by the bonding processes provided in Examples 1-7 is 0-8%, the glue residue rate is 0-10%, and the bubble rate is 1-50%.

[0077] Comparing Example 1 and Comparative Example 1, it can be seen that the glue overflow rate and glue residue rate of the bonding wafer products obtained without the pretreatment step are increased, and the bubble rate is greatly increased.

[0078] Comparing Example 1 and Comparative Examples 2-3, it can be seen that the bubble rate of the bonding wafer products obtained by only one vacuum pumping is also greatly increased.

[0079] Comparing Example 1 and Comparative Example 4, it can be seen that the glue residue rate of the bonding wafer products obtained by the conventional bonding process is high, and the bubble rate is as high as 100%, indicating that the product yield is very low.

[0080] Further comparing Example 1 and Example 4, it can be found that not performing heating treatment in the pretreatment process will cause the bubble rate of the obtained product to increase slightly.

[0081] Further comparing Example 1 and Example 5, it can be seen that bonding by one-step heating after pretreatment will cause the glue overflow rate, glue residue rate and bubble rate of the obtained wafer product to increase slightly.

[0082] Further comparing Example 1 and Example 6, it can be seen that bonding by the first heating with too high a heating rate in the stage heating will cause the glue overflow rate and glue residue rate of the obtained wafer product to increase.

[0083] Finally, comparing example 1 and example 7, it can be found that the stage heating process without maintaining vacuum will cause the glue overflow rate, glue residue rate and bubble rate of the final bonded wafer product to increase, especially affecting the bubble rate.

[0084] In summary, the bonding process provided by the present application effectively eliminates the problems of holes and glue residue in the cured wafer, and by further limiting the bonding process to use stage heating to match the pretreatment step, the glue overflow rate of the obtained bonded wafer product can be as low as 0-2%, the glue residue rate can be as low as 0-2%, and the bubble rate can be as low as 1-4%.

[0085] The applicant declares that the present application illustrates a bonding process for deep Pad wafers and its application through the above examples, but the present application is not limited to the above process steps, that is, it does not mean that the present application must rely on the above process steps to be implemented. Those skilled in the art should understand that any improvement on the present application, equivalent replacement of the materials selected by the present application, addition of auxiliary ingredients, selection of specific methods, etc. fall within the scope of protection and disclosure of the present application.

Claims

1. A method for bonding a deep pad wafer, the method comprising: The bonding method comprises: contacting the glass substrate with the bonding glue and the wafer, pre-treating, filling the bonding glue on the glass substrate into the Pad recess of the wafer under the condition of temperature rising and solidifying to complete the bonding of the deep Pad wafer. The pre-treating method comprises: sequentially performing first vacuumizing, vacuum breaking and second vacuumizing to complete the pre-treating. The vacuum degree of the system after the first vacuumizing is 1-200 Pa. The vacuum degree of the system after the second vacuumizing is 0.01-1 Pa. The pre-treating is performed under heating. The heating temperature is 30-35℃.

2. The bonding method according to claim 1, wherein The bonding glue comprises two-component epoxy resin glue.

3. The bonding method according to claim 1, wherein The wafer comprises a wafer substrate and a Pad layer deposited in the recess of the wafer substrate.

4. The bonding method according to claim 3, wherein The wafer substrate comprises a ceramic substrate, a glass substrate or an integrated circuit chip substrate.

5. The bonding method according to claim 3, wherein The material of the Pad layer comprises metal material.

6. The bonding method according to claim 5, wherein The metal comprises any one of gold, copper, aluminum or nickel.

7. The bonding method according to claim 1, wherein The temperature rising method is stepwise temperature rising.

8. The bonding method according to claim 7, wherein The stepwise temperature rising method specifically comprises: first rising the system to 60-70℃ at a rising rate of 10-20℃ / min, keeping for 1-3 min, then second rising the system to not less than 90℃ at a rising rate of 30-40℃ / min, keeping for not less than 15 min to complete the stepwise temperature rising.

9. The bonding method according to claim 8, wherein The rising rate of the first rising is 10-20℃ / min.

10. The bonding method according to claim 8, wherein The rising rate of the second rising is 30-40℃ / min.

11. The bonding method according to claim 1, wherein The bonding method comprises: contacting the glass substrate with the bonding glue and the wafer, pre-treating, filling the bonding glue on the glass substrate into the Pad recess of the wafer under the condition of temperature rising and solidifying to complete the bonding of the deep Pad wafer.

12. Application of the bonding method of the deep Pad wafer according to any one of claims 1-11 in chip manufacturing.

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