Substrate processing device, semiconductor device manufacturing method and program

Abstract

The present invention provides a substrate processing device, a method for manufacturing a semiconductor device, and a program. In a substrate processing device having a vacuum transfer chamber, the purpose is to reduce the amount of moisture in the low-temperature area of ​​the transfer chamber. The device comprises: a processing chamber having a heater; a load lock chamber; a transfer chamber disposed between the processing chamber and the load lock chamber, having a first region on the processing chamber side and a second region located closer to the load lock chamber than the first region and having a lower temperature than the first region; a detection unit that detects the amount of moisture in the transfer chamber; and an inert gas supply unit that can supply an inert gas from the interior of the transfer chamber toward the second region.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] Some semiconductor device manufacturing equipment includes a processing chamber for processing substrates and a transfer chamber equipped with a robot for transporting the substrates to the processing chamber. The presence of substances unrelated to substrate processing, such as moisture, in the transfer chamber can lead to a decrease in yield. Therefore, there is a need to reduce foreign matter in the transfer chamber. For example, Patent Document 1 describes a method for this purpose. In this method, the entire transfer chamber is heated to remove moisture.

[0003] Prior art literature

[0004] Patent Document 1: Japanese Patent Application Laid-Open No. 2001-338967

[0005] Moisture is sometimes generated in large quantities in the low temperature region of the transport chamber. Thus, when the entire transport chamber is to be treated as in the past, it is sometimes impossible to completely remove the moisture. Summary of the Invention

[0006] The present technology aims to reduce the amount of moisture in a low-temperature region in a substrate processing apparatus having a transfer chamber.

[0007] The present invention provides a technology comprising: a processing chamber having a heater; a load lock chamber; a transfer chamber, which is arranged between the above-mentioned processing chamber and the above-mentioned load lock chamber, and has a first area on the side of the above-mentioned processing chamber and a second area which is closer to the above-mentioned load lock chamber side than the above-mentioned first area and has a lower temperature than the above-mentioned first area; a detection unit, which detects the amount of moisture in the above-mentioned transfer chamber; and an inert gas supply unit, which can supply inert gas toward the above-mentioned second area inside the above-mentioned transfer chamber.

[0008] The effects of the present invention are as follows.

[0009] An object of the present invention is to reduce the amount of moisture in a low-temperature region in a substrate processing apparatus having a transfer chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is an explanatory diagram for explaining the substrate processing apparatus according to the first embodiment.

[0011] Figure 2 It is an explanatory diagram for explaining the substrate processing apparatus according to the first embodiment.

[0012] Figure 3 It is an explanatory diagram for explaining the dispersion unit according to the first embodiment.

[0013] Figure 4It is an explanatory diagram for explaining RC according to the first embodiment.

[0014] Figure 5 It is an explanatory diagram for explaining the gas supply unit according to the first embodiment.

[0015] Figure 6 It is an explanatory diagram for explaining the controller of the substrate processing apparatus according to the first embodiment.

[0016] Figure 7 It is an explanatory diagram for explaining a substrate processing apparatus according to a second embodiment.

[0017] Figure 8 It is an explanatory diagram for explaining a substrate processing apparatus according to a second embodiment.

[0018] Figure 9 It is an explanatory diagram for explaining a substrate processing apparatus according to a third embodiment.

[0019] Figure 10 It is an explanatory diagram for explaining a substrate processing apparatus according to a fourth embodiment.

[0020] Figure 11 It is an explanatory diagram for explaining a substrate processing apparatus according to a fourth embodiment. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments will be described with reference to the drawings.

[0022] [First embodiment]

[0023] A first embodiment will be described.

[0024] (1) Structure of substrate processing apparatus

[0025] use Figures 1 to 6 The structure of the substrate processing apparatus will be described.

[0026] In addition, the drawings used in the following description are schematic, and the relationship between the dimensions of the elements and the ratio of the elements in the drawings may not necessarily be consistent with reality. In addition, the relationship between the dimensions of the elements and the ratio of the elements may not necessarily be consistent between multiple drawings.

[0027] Figure 1 、 Figure 2 is an explanatory diagram schematically illustrating a substrate processing apparatus. Figure 3 It is an explanatory diagram for explaining the dispersing portion of the inert gas supply portion provided in the transfer chamber. Figure 4 、 Figure 5 It is an explanatory diagram for explaining an RC (reactor) included in the substrate processing apparatus. Figure 6 1 is an explanatory diagram for explaining a controller of a substrate processing apparatus.

[0028] use Figure 1 、 Figure 2 The schematic structure of the substrate processing apparatus will be described. Figure 1 It is a cross-sectional view showing a structural example of a substrate processing apparatus. Figure 2 yes Figure 1 Longitudinal cross-sectional view along α-α'.

[0029] The substrate processing apparatus 200 processes the substrate 100 and mainly comprises an IO stage 110, an atmospheric transfer chamber 120, a load lock chamber 130, a vacuum transfer chamber 140, a process module PM (hereinafter referred to as PM), and a controller 400. Next, each component will be described in detail.

[0030] (Atmospheric conveying room / IO workbench)

[0031] An IO stage (load port) 110 is provided in front of the substrate processing apparatus 200. A plurality of wafer cassettes 111 are mounted on the IO stage 110. The wafer cassettes 111 are used as carriers for conveying substrates 100 such as silicon (Si) substrates.

[0032] A plurality of substrates 100 that are batch-managed are stored in the wafer cassette 111. For example, n substrates 100 are stored.

[0033] The wafer cassette 111 is provided with a lid 112, which is opened and closed by a wafer cassette opener 121. The wafer cassette opener 121 opens and closes the lid 112 of the wafer cassette 111 placed on the IO table 110, opening and closing the substrate access port, thereby allowing the substrates 100 to be transported in and out of the wafer cassette 111. The wafer cassette 111 is supplied to and discharged from the IO table 110 by an AMHS (Automated Material Handling System) (not shown).

[0034] The IO stage 110 is adjacent to an atmospheric transfer chamber 120. A load lock chamber 130, described later, is connected to the atmospheric transfer chamber 120 on a different surface from the IO stage 110. An atmospheric robot 122 for transferring the substrate 100 is provided in the atmospheric transfer chamber 120.

[0035] A communication hole 128 and a cassette opener 121 are provided on the front side of the housing 127 of the atmospheric transfer chamber 120 for transferring substrates 100 into and out of the atmospheric transfer chamber 120. A communication hole 129 is provided on the rear side of the housing 127 of the atmospheric transfer chamber 120 for transferring substrates 100 into and out of the load lock chamber 130. Communication hole 129 is opened and closed by a gate valve 133, allowing the substrates 100 to be transferred in and out.

[0036] (Load Lock Chamber)

[0037] The load lock chamber 130 is adjacent to the atmospheric transfer chamber 120. A vacuum transfer chamber 140, which will be described later, is arranged on a surface of a housing 131 constituting the load lock chamber 130 that is different from the atmospheric transfer chamber 120.

[0038] A substrate mounting table 136 having at least two mounting surfaces 135 for mounting substrates 100 is provided in the load lock chamber 130. The distance between the substrate mounting surfaces 135 is set according to the distance between the end effectors of the arms of the robot 170 described later.

[0039] (Vacuum conveying chamber)

[0040] The substrate processing apparatus 200 includes a vacuum transfer chamber (transfer module) 140, which serves as a transfer chamber serving as a transfer space for transferring the substrate 100 under negative pressure. The vacuum transfer chamber 140 may also be simply referred to as a transfer chamber. The frame 141 constituting the vacuum transfer chamber 140 is formed into a pentagon when viewed from above, and the modules PM1 to PM4 (hereinafter referred to as PMs) serving as the load lock chamber 130 and processing the substrate 100 are connected to each side of the pentagon. A robot 170 serving as a transfer unit for transferring (transferring) the substrate 100 under negative pressure is provided approximately in the center of the vacuum transfer chamber 140, with a flange 144 serving as a base.

[0041] The load lock chamber 130 and the vacuum transfer chamber 140 are communicated with each other via a communication hole 142 . The communication hole 142 is opened and closed by a gate valve 134 .

[0042] The robot 170 installed in the vacuum transfer chamber 140 is configured to be able to maintain the airtightness of the vacuum transfer chamber 140 and to be able to be raised and lowered by using the lift 145 and the flange 144. The two arms 172 of the robot 170 are configured to be able to be raised and lowered. Figure 2 In FIG. 1 , for convenience of explanation, the end effector of the arm 172 is shown, and the link structure between the end effector and the flange 144 and the like are omitted.

[0043] Reactors (hereinafter referred to as RCs) are installed at PM1, PM2, PM3, and PM4, which are adjacent to vacuum transfer chamber 142. Specifically, RC1 and RC2 are installed at PM1. RC3 and RC4 are installed at PM2. RC5 and RC6 are installed at PM3. RC7 and RC8 are installed at PM4.

[0044] A communication hole 148 is provided on the side wall of the frame 141 facing each RC. Figure 2As described above, a connecting hole 148 (5) is provided on the wall opposite to RC5. Furthermore, a gate valve 149 is provided on each RC. For example, a gate valve 149 (5) is provided on RC5. RC1 to RC4 and RC6 to RC8 also have the same structure as RC5, so their description is omitted here.

[0045] An arm control unit 171 for controlling the lifting and rotation of an arm 172 is built into the elevator 145. The arm control unit 171 mainly includes a support shaft 171a that supports the axis of the arm 172 and an actuator 171b that lifts or rotates the support shaft 171a.

[0046] The actuator 171b includes, for example, a lifting mechanism 171c including a motor for lifting and lowering, and a rotating mechanism 171d, such as a gear, for rotating the support shaft 171a. Furthermore, within the elevator 145, an indicator 171e for lifting and rotating the support may be provided on the actuator 171b as part of the arm control unit 171. The indicator 171e is electrically connected to the controller 400. The indicator 171e controls the actuator 171b based on instructions from the controller 400.

[0047] The arm 172 can rotate and extend around the axis. As mentioned above, the axis of the robot 170 is arranged at the approximate center of the frame 140, but the distance from the center of the axis to the substrate mounting table 212 (described later) of each RC may vary due to structural constraints. For example, Figure 1 In the example, the distance L1 from the axis center of the robot 170 to the substrate mounting table 212 of RC8 (or RC7) is configured to be shorter than the distance L2 from the axis center of the robot 170 to the substrate mounting table 212 of RC4 (or RC3).

[0048] The robot 170 rotates and extends, and can transport substrates 100 to and from RCs having different distances between their axes. The robot 170 can, for example, convey wafers to the RCs based on instructions from the controller 400 .

[0049] Next, the exhaust section 160 will be described. The exhaust section 160 is provided below the frame 241. Specifically, for example, an exhaust pipe 161 is connected to the bottom wall of the frame 241. An APC (Auto Pressure Controller) 162 is provided on the exhaust pipe 161 as a pressure controller for controlling the environment in the frame 241 to a predetermined pressure. The APC 162 has a valve core (not shown) capable of adjusting the opening, and adjusts the conductance of the exhaust pipe 161 according to instructions from the controller 400. In addition, a valve 163 is provided on the exhaust pipe 161. The exhaust pipe 161, the APC 162, and the valve 163 are collectively referred to as the conveying chamber exhaust section.

[0050] Furthermore, a DP (Dry Pump) (not shown) is provided downstream of the exhaust pipe 271 . The DP exhausts the environment of the housing 241 through the exhaust pipe 271 .

[0051] A moisture detection unit 146 is provided in the housing 141 that constitutes the vacuum transfer chamber 140. The moisture detection unit 146 is electrically connected to the controller 400. The moisture detection unit 146 has the function of detecting the amount of moisture in the vacuum transfer chamber 140 and transmitting the detected amount of moisture to the controller 400. The moisture detection unit 146 is also simply referred to as a detection unit.

[0052] For reasons described below, the moisture detector 146 is installed in a location where it can detect the amount of moisture in the vacuum transfer chamber 140. The location where the moisture can be detected is a low-temperature portion, such as the ceiling 147 of the housing 141 or near the sidewall 141a (described below) on the load lock chamber 130 side.

[0053] A window 151 is provided on the ceiling 147. Window 151 is used to confirm whether the robot 170 is operating normally. An O-ring 152, serving as a sealing member, is placed between the window 151 and the wall 147a forming the ceiling 147. The O-ring 152 is made of, for example, rubber. This seals the environment within the vacuum transfer chamber 140. A cover 153 is provided on the window 151.

[0054] The housing 141 may be provided with a cooling device (medium) for adjusting the temperature of the housing 141 and a flow path 154 for flowing cooling water. This structure can suppress excessive temperature rise even when the housing 141 is affected by the heater 213 in the RC.

[0055] The frame 141 is provided with an inert gas supply unit 180 capable of supplying an inert gas to a low temperature portion described later. Figure 2 The inert gas supply unit 180 is provided, for example, on the ceiling 147. The inert gas supply unit 180 includes an inert gas supply pipe 181. In the inert gas supply pipe 181, there are, from upstream, an inert gas source 182, a mass flow controller (MFC) 183 serving as a flow controller (flow control unit), and a valve 184 serving as an on-off valve. A heating unit 185 may also be provided to heat the inert gas supplied to the inert gas supply pipe 181.

[0056] A dispersion unit 186 is provided at the front end of the inert gas supply pipe 181 . The dispersion unit 186 disperses and supplies the inert gas into the housing 141 .

[0057] The inert gas supply unit 180 is mainly composed of an inert gas supply pipe 181, an MFC 183, a valve 184, and a dispersion unit 186. A heater 185 may also be included in the inert gas supply unit 180. Furthermore, the inert gas supply unit 180 also supplies inert gas to the transfer chamber 140 and is therefore also referred to as a transfer chamber-based gas supply unit.

[0058] Next, the low-temperature portion and the high-temperature portion will be described.

[0059] The high-temperature portion is, for example, wall 141b adjacent to the RC. When processing substrate 100, heater 213 within the RC heats substrate 100. Consequently, wall 141b adjacent to the RC is affected by heater 213 and reaches a higher temperature than the other walls. Thus, the portion that reaches a higher temperature due to the influence of the heating element of the RC, such as heater 213, is referred to as a high-temperature portion. The region containing the high-temperature portion is also referred to as a high-temperature region or a first region.

[0060] The low-temperature portion refers to a portion having a lower temperature than the high-temperature portion. The region having the low-temperature portion is also referred to as a low-temperature region or a second region. The low-temperature portion is, for example, the ceiling 147 and the wall 141a of the conveying chamber 140 constituting the connecting hole 142, and is the region constituting them. In addition, the region where the O-ring 152 is arranged is also referred to as a low-temperature region. Since they are located away from the RC, they are not easily affected by the heater 213 provided in the RC. Therefore, the temperature is lower than that of the wall 141b. Moreover, since the outer contours of the low-temperature portion such as the ceiling 147 are exposed to the atmosphere, they are close to room temperature, to which moisture easily adheres. In other words, it is a structure in which moisture easily adheres.

[0061] The high-temperature portion can be said to exist between a heating portion within the processing chamber, such as heater 213, and a low-temperature portion. Alternatively, the low-temperature portion can be said to exist between the high-temperature portion and the load-lock chamber 130. In this embodiment, the low temperature refers to a temperature (e.g., less than 100°C) at which moisture easily adheres to the transfer chamber 140.

[0062] In addition, the horizontal center of the ceiling 147 is far away from each RC and is therefore less susceptible to the heat of the heater 213. The vicinity of the communication hole 142 is also less susceptible to the heat of the heater 213. Therefore, these structures achieve low temperatures.

[0063] Furthermore, when the cooling device is operated, the frame 141 is maintained at a temperature (eg, room temperature) at which maintenance personnel can work.

[0064] In such a low-temperature portion, there is a problem of increased moisture content. Moisture deposited in the low-temperature portion adheres to the substrate 100, particularly to a processed substrate 100 that has been heated during substrate processing. This may lead to the formation of a natural oxide film on the substrate 100 and undesirable modifications caused by the moisture components (hydrogen (H) and oxygen (O)).

[0065] As described above, the distances to the RC and the axis of the robot 170 vary, and thus the transport distance of the substrate 100 also varies. Therefore, the formation of natural oxide films, undesirable film modifications, and other conditions vary for each RC that processes the substrate, which may result in a decrease in yield.

[0066] On the other hand, it is also conceivable to heat the frame 141 to remove moisture as in the conventional art, but in this case, for example, the O-ring 152 of the ceiling portion and components constituting the robot 170 may be degraded by the heat. Therefore, it is difficult to heat the transfer chamber.

[0067] Therefore, in this embodiment, each low-temperature portion is maintained at a low temperature and moisture is removed. To achieve this, an inert gas is locally supplied to the low-temperature portion. Specifically, the inert gas is locally supplied to the low-temperature portion using the dispersion portion 186 .

[0068] Next, use Figure 3 The detailed structure of the dispersion unit 186 will be described. Figure 3 In the figure, (a) is a diagram of the dispersion portion 186 viewed from the robot 170 toward the wall 141b, and (b) is a cross-sectional view taken along line AA' of (a).

[0069] Distributor 186 is primarily composed of a cylindrical main body 186a. An inert gas supply pipe 181 is connected to main body 186a. A hole 186b, serving as an inert gas supply port, is provided on the side of main body 186a, facing robot 170. A hole 186c, serving as an inert gas supply port, may also be provided below main body 186a.

[0070] The height position of the hole 186 b is such that the inert gas discharged from the hole 186 b can collide with the ceiling 147 , and is set, for example, at a height position between the highest arm 172 of the robot 170 and the ceiling 147 .

[0071] Hole 186b may also be opened in the direction in which the inert gas collides with the inner wall of ceiling 147. By supplying inert gas toward the ceiling, moisture adhering to inner wall 147a of ceiling 147 collides with the inert gas, thereby physically removing the moisture. Consequently, moisture adhering to inner wall 147a can be removed while maintaining the low temperatures of inner wall 147 and robot 170.

[0072] Hole 186b is configured to have a horizontal width sufficient to supply inert gas to O-ring 152, for example. Specifically, the width is equal to or greater than the diameter of O-ring 152. This allows moisture adhering to the periphery of O-ring 152 to collide with the inert gas, physically stripping the moisture away. Consequently, moisture can be removed without thermally deforming O-ring 152. While hole 186b is described herein as a slit, this is not limiting and may be configured with multiple holes. In the case of a configuration comprising multiple holes, the distance between the outermost holes is equal to or greater than the diameter of O-ring 152.

[0073] Hole 186c is provided below the main body 186a. The inert gas supplied from hole 186c is directed toward wall 141a adjacent to the load lock chamber 130. Here, the reason for supplying inert gas to wall 141a is explained. Unprocessed substrates 100 stored in a wafer cassette are moved around various locations within the factory, and thus may accumulate moisture before reaching the substrate processing apparatus 200. This moisture, when transferred from the load lock chamber 130 to the vacuum transfer chamber 140, diffuses into the vacuum transfer chamber 140. In particular, the inert gas is more likely to accumulate on wall 141a located near the connecting hole 142.

[0074] In contrast, by supplying inert gas to wall 141a through hole 186c, moisture adhering to wall 141a collides with the inert gas and is physically removed. Thus, while maintaining the low temperatures of wall 147a and robot 170, moisture adhering to wall 147a, which has a high moisture content, can be efficiently removed.

[0075] The width of one side of hole 186c parallel to wall 141 is preferably equal to or greater than the width of communication hole 142. Moisture adhering to the unprocessed substrate 100 passing through load-lock chamber 130 diffuses around communication hole 142. Therefore, by making the width of hole 186c equal to the width of communication hole 142, inert gas can be reliably supplied to moisture adhering to the wall surrounding communication hole 142 in wall 141a. Furthermore, by making the width of communication hole 142 greater than the width of communication hole 142, inert gas can be reliably supplied to moisture adhering to the wall lateral to communication hole 141 in wall 141a.

[0076] The maximum width of the hole 186c in the direction parallel to the wall 141a is the distance between the opposing walls of the transfer chamber 140 adjacent to the wall 141a, and more preferably the width of the wall 141a.

[0077] The inert gas supplied from the dispersing section 186 is preferably heated by the heater 185. By heating the inert gas, the efficiency of water removal can be improved. Furthermore, the supply of the inert gas can be repeatedly started and stopped. By repeatedly causing the water to collide with the inert gas, it can be physically removed more efficiently.

[0078] (Process Module)

[0079] Next, PM will be described with RC as the center. PM1 to PM4 have the same structure and are therefore described as PM. RC1 to RC8 also have the same structure and are therefore described as RC.

[0080] A partition wall is provided between the two RCs provided in the PM so that the environments of the processing spaces 205 described later are not mixed, and each processing space 205 is configured as an independent environment.

[0081] use Figure 4 、 Figure 5 The details of RC are described below. Since adjacent RCs have the same structure, one RC is described here. Figure 4 As shown, the RC includes a container 202. The container 202 is, for example, a sealed container having a circular and flat cross-section. Furthermore, the container 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS). Within the container 202 are formed: a processing chamber 201, which constitutes a processing space 205 for processing a substrate 100 such as a silicon wafer; and a transport chamber 206, which has a transport space through which the substrate 100 passes when being transported to the processing space 205. The container 202 is composed of an upper container 202a and a lower container 202b. A partition 208 is provided between the upper container 202a and the lower container 202b.

[0082] A communication hole 148 adjacent to the gate valve 149 is provided on the side of the lower container 202b, and the substrate 100 moves between the vacuum transfer chamber 140 via the communication hole 148. A plurality of lift pins 207 are provided on the bottom of the lower container 202b.

[0083] A substrate support unit 210 for supporting the substrate 100 is disposed in the processing space 205. The substrate support unit 210 primarily includes a substrate mounting surface 211 on which the substrate 100 is mounted, a substrate mounting table 212 having the substrate mounting surface 211 on its surface, and a heater 213 serving as a heating unit disposed within the substrate mounting table 212. Through holes 214 for the lift pins 207 to pass through are provided in the substrate mounting table 212 at positions corresponding to the lift pins 207.

[0084] A wiring 222 for supplying power is connected to the heater 213. The wiring 222 is connected to a heater control unit 223. The heater control unit 223 is electrically connected to the controller 400. The controller 400 controls the heater control unit 223 to operate the heater 213.

[0085] The substrate mounting table 212 is supported by a shaft 217. The shaft 217 passes through the bottom of the container 202 and is connected to a lifting unit 218 outside the container 202.

[0086] By operating the lifting unit 218 to lift and lower the shaft 217 and the substrate mounting table 212 , the substrate mounting table 212 can lift and lower the substrate 100 mounted on the mounting surface 211 .

[0087] The processing chamber 201 is composed of, for example, a buffer structure 230 described later and a substrate mounting table 212. The processing chamber 201 only needs to ensure a processing space 205 for processing the substrate 100, and may be composed of other structures.

[0088] When the substrate 100 is transported, the substrate mounting table 212 is lowered to the transport position P0 where the substrate mounting surface 211 faces the communication hole 148. When the substrate 100 is processed, as shown in FIG. Figure 1 As shown, the substrate 100 is raised to the processing position in the processing space 205.

[0089] A buffer structure 230 for gas diffusion is provided at the upper portion (upstream side) of the processing space 205. The buffer structure 230 is mainly composed of a cover 231. The first gas supply unit 240 and the second gas supply unit 250 described later are connected to the cover 231 in a manner that is connected to the gas inlet hole 231a provided in the cover 231. Figure 4 Although only one gas introduction hole 231 a is shown in the figure, a gas introduction hole may be provided in each gas supply portion.

[0090] (Exhaust section)

[0091] Next, the exhaust section 271 will be described. The exhaust pipe 272 is in communication with the processing space 205. The exhaust pipe 272 is connected to the upper container 202a in a manner that is in communication with the processing space 205. The exhaust pipe 272 is provided with an APC 273 as a pressure controller that controls the pressure in the processing space 205 to a predetermined pressure. The APC 273 has a valve core (not shown) that can adjust the opening, and adjusts the conductance of the exhaust pipe 272 according to instructions from the controller 400. In addition, a valve 274 is provided on the upstream side of the APC 273 in the exhaust pipe 272. The exhaust pipe 272, the valve 274, and the APC 273 are collectively referred to as the exhaust section.

[0092] In addition, a DP (Dry Pump) 275 is provided downstream of the exhaust pipe 272 . The DP 275 exhausts the atmosphere of the processing space 205 through the exhaust pipe 272 .

[0093] Next, use Figure 5 The gas supply unit for supplying gas to the processing chamber 201 will be described. In addition, in order to distinguish it from the aforementioned gas supply unit for the transport chamber, Figure 5 The gas supply unit described in the above description is also referred to as a processing chamber gas supply unit.

[0094] The first gas supply unit 240 will be described. A first gas supply pipe 241 is provided with, in order from upstream, a first gas source 242, an MFC 243 as a flow controller (flow control unit), and a valve 244 as an on-off valve.

[0095] The first gas source 242 is a source of a first gas containing a first element (also referred to as a "first-element-containing gas"). The first-element-containing gas is a source gas, i.e., a type of process gas. Here, the first element is, for example, silicon (Si). That is, the first-element-containing gas is, for example, a silicon-containing gas. Specifically, monosilane (SiH4) gas is used as the silicon-containing gas.

[0096] The first gas supply unit 240 is mainly composed of a first gas supply pipe 241 , an MFC 243 , and a valve 244 .

[0097] Next, the second gas supply unit 250 will be described. The second gas supply pipe 251 is provided with a second gas source 252, an MFC 253 as a flow controller (flow control unit), and a valve 254 as an on-off valve in this order from the upstream direction.

[0098] The second gas source 252 is a source of a second gas containing a second element (hereinafter also referred to as "second-element-containing gas"). The second-element-containing gas is one type of processing gas. Furthermore, the second-element-containing gas can also be considered a reaction gas or a reforming gas.

[0099] Here, the second element-containing gas contains a second element different from the first element. The second element is, for example, any one of oxygen (O), nitrogen (N), and carbon (C). Here, the second element-containing gas is described as an oxygen-containing gas, for example. Specifically, oxygen (O2) is used as the oxygen-containing gas.

[0100] The second gas supply unit 250 is mainly composed of the second gas supply pipe 251 , the MFC 253 , and the valve 254 .

[0101] In addition, when a film is formed on the substrate 100 using the first gas alone, the second gas supply unit 250 may not be provided.

[0102] (Controller)

[0103] Next, use Figure 6 The controller 400 will be described.

[0104] The substrate processing apparatus 200 includes a controller 400 for controlling the operation of each unit.

[0105] The controller 400, serving as a control unit (control unit), is configured as a computer including a CPU (Central Processing Unit) 401, a RAM (Random Access Memory) 402, a storage unit 403 serving as a storage device, and an I / O port 404. The RAM 402, storage unit 403, and I / O port 404 are configured to exchange data with the CPU 401 via an internal bus 405. Data transmission and reception within the substrate processing apparatus 200 is performed by instructions from a transmission / reception instruction unit 406, which is a function of the CPU 401.

[0106] The CPU 401 further includes a determination unit 407 . The determination unit 407 has a function of analyzing the relationship between the table stored in the storage unit 403 and the moisture content measured by the moisture detection unit 146 .

[0107] A network transceiver 283 connected via a network is provided in the host device 270. The network transceiver 283 can receive information on the processing history and processing schedule of the substrates 100 in a batch.

[0108] The storage unit 403 is composed of, for example, a flash memory or an HDD (Hard Disk Drive). The storage unit 403 readablely stores a recipe 409, which includes a process recipe describing substrate processing steps and conditions, and a control program 410 for controlling the operation of the substrate processing apparatus. Furthermore, the storage unit 403 includes a moisture information storage unit 411 capable of recording data detected by the moisture detection unit 146 and reading out the temperature data.

[0109] In addition, the process is a combination of processes that enable the controller 400 to execute the various steps in the substrate processing process described later and to obtain a predetermined result, and functions as a program. Hereinafter, the process, control program, etc. are collectively referred to as a program. In addition, when the term "program" is used in this specification, it may include only the process alone, only the control program alone, or both. In addition, the RAM 402 is configured as a memory area (work area) that temporarily stores programs, data, etc. read by the CPU 401.

[0110] The I / O port 404 is connected to various components of the PM, such as the gate valve 149 , the lifting mechanism 218 , various pressure regulators, various pumps, and the heater control unit 223 .

[0111] The CPU 401 is configured to read and execute a control program from the storage unit 403, and to read a process recipe from the storage unit 403 in response to input of an operation command from the input / output device 281. Furthermore, the CPU 401 is configured to control the opening and closing operations of the gate valve 149, the lifting and lowering operations of the lifting mechanism 218, the moisture detector 146, the heater control unit 223, the opening and closing control of each pump, the flow rate adjustment operation of the MFC, valves, and the like in accordance with the contents of the read process recipe.

[0112] In addition, the controller 400 can constitute the controller 400 of the present technology by installing the program in the computer using an external storage device (such as a magnetic disk such as a hard disk, an optical disk such as a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 282 that stores the above-mentioned program. In addition, the unit for supplying the program to the computer is not limited to the case where the supply is performed via the external storage device 282. For example, a communication unit such as the Internet or a dedicated line can also be used to supply the program without passing through the external storage device 282. In addition, the storage unit 403 and the external storage device 282 are configured as a computer-readable recording medium. Hereinafter, they are also collectively referred to as recording media. In addition, in this specification, when the term recording medium is used, in the case of including only the storage unit 403 alone, there is sometimes a case where only the external storage device 282 alone is included or a case where both are included.

[0113] (2) Substrate processing

[0114] Next, as one process of the substrate processing apparatus, a film processing process and a maintenance process for forming a film on the substrate 100 using the substrate processing apparatus 200 having the above configuration will be described.

[0115] Here, a substrate processing method in the vacuum transfer chamber 140 and one RC is described as an example.

[0116] (Membrane treatment process)

[0117] The substrate transfer process, one of the film processing steps, will now be described. The atmospheric robot 122 unloads the substrate 100 from the wafer cassette 111. The atmospheric robot 122 then transfers the substrate 100 to the load lock chamber 130. If a processed substrate 100 is already in the load lock chamber 130, the atmospheric robot 122 transfers the processed substrate 100 to the wafer cassette 111.

[0118] Once the load lock chamber 130 is set to a negative pressure, reaching the same level as the vacuum transfer chamber 140, the gate valve 134 is opened. The robot 170 picks up the unprocessed substrate 100 in the load lock chamber 130 and transfers it to each RC. At this point, moisture adhering to the unprocessed substrate 100 diffuses into the vacuum transfer chamber 140.

[0119] In each RC, after processing the substrate 100 for a predetermined time, the gate valve 149 is opened. The robot 170 replaces the processed substrate 100 in the RC with the unprocessed substrate 100 supported by the robot 170 and loads the unprocessed substrate into the RC.

[0120] The robot 170 carries the processed substrate 100 into the load lock chamber 130 .

[0121] During this time, the moisture detector 146 detects the moisture content in the vacuum transfer chamber 140. If the moisture content exceeds a predetermined value, maintenance is performed before the next substrate or batch is processed. If the moisture content is less than the predetermined value, the substrate 100 continues to be processed.

[0122] Next, the operation in the RC when processing the substrate 100 will be described.

[0123] The substrate stage 212 is lowered to the transfer position (transfer position P0) for the substrate 100, and the lift pins 207 are inserted through the through-holes 214 of the substrate stage 212. As a result, the lift pins 207 protrude a predetermined height from the surface of the substrate stage 212. Simultaneously with these operations, the atmosphere of the transfer chamber 206 is evacuated to a pressure equal to or lower than that of the adjacent vacuum transfer chamber 140.

[0124] Next, the gate valve 149 is opened to connect the transfer chamber 206 with the adjacent vacuum transfer chamber 140 . Then, the robot 170 carries the substrate 100 from the vacuum transfer chamber 140 into the transfer chamber 206 and places it on the lift pins 207 .

[0125] When the substrate 100 is placed on the lift pins 207, the substrate mounting table 212 is raised to place the substrate 100 on the substrate mounting surface 211, and then Figure 1 As shown, it rises to the substrate processing position.

[0126] When the substrate 100 is placed on the substrate placement surface 211, power is supplied to the heater 213, and the surface of the substrate 100 is controlled to reach a predetermined temperature. The temperature of the substrate 100 is, for example, between room temperature and 800°C, preferably between room temperature and 500°C. At this time, the wall 141b is also heated.

[0127] Next, the process gas supply step, one of the film processing steps, will be described. After the substrate 100 is heated to a desired temperature, the first gas and the second gas are supplied to the processing chamber 201. The supply method can be, for example, simultaneous or alternating supply of the first and second gases to form the desired film. The desired film herein is, for example, a silicon oxide film.

[0128] When a desired film is formed on the substrate 100, the substrate 100 is unloaded from the processing chamber in the reverse order of when it was brought in. In the transfer chamber 140, since the amount of water is less than a predetermined value, a decrease in yield can be suppressed.

[0129] (Maintenance process)

[0130] Next, the maintenance process will be described.

[0131] If the determination unit 407 determines that the moisture content detected by the moisture detection unit 146 is greater than a predetermined value, the process shifts to the maintenance step. The maintenance step is performed with the substrate 100 not present in the transport chamber 140 and with all operations related to processing the substrate 100 stopped. For example, the gas supply to the processing chamber 201 and the transport of the substrate 100 are stopped.

[0132] During the maintenance process, the inert gas supply unit 180 and exhaust unit 160 are operated. By supplying inert gas into the housing 141, moisture adhering to the low-temperature portion of the housing 141 is removed. In this embodiment, inert gas is supplied from the holes 186b of the dispersion unit 186 to the wall 147a, which serves as the low-temperature portion, to remove moisture adhering to the wall 147a. Specifically, inert gas is supplied to the wall 147a, which forms the ceiling of the low-temperature area. After a predetermined period of time, the supply of inert gas is stopped.

[0133] Furthermore, when the holes 186 c are provided in the dispersion portion 186 , an inert gas may be supplied toward the wall 141 a to remove moisture adhering to the wall 141 a .

[0134] In this process, the inert gas supply rate can also be controlled based on the moisture content detected by moisture detector 146. For example, if determination unit 407 determines that the moisture content detected by moisture detector 146 is greater than a predetermined value, it can be determined that the amount of moisture adhering to the low-temperature portion is high, and the inert gas supply rate can be increased. This ensures reliable moisture removal.

[0135] Furthermore, for example, if the determination unit 407 determines that the amount of moisture detected by the moisture detection unit 146 is less than a predetermined value, it may be determined that the amount of moisture adhering to the low-temperature portion is small, and the amount of inert gas supplied may be reduced. In this case, the amount of inert gas supplied can be suppressed, thereby reducing the cost associated with the amount of inert gas used.

[0136] When the inert gas supply rate is controlled based on the moisture content information detected by the moisture detection unit 146, a table that associates the moisture content and the inert gas supply rate may be provided in the moisture information storage unit 411. In this case, the determination unit 407 compares the detected moisture content data with the table to determine the inert gas supply rate.

[0137] In the present embodiment, the supply of the inert gas is stopped after a predetermined time has elapsed. However, the present invention is not limited thereto and the supply of the inert gas may be stopped when it is determined that the amount of moisture detected by the moisture detector 146 is equal to or less than a predetermined value.

[0138] [Second embodiment]

[0139] Next, use Figure 7 、 Figure 8 The second embodiment will now be described. The second embodiment differs from the first embodiment in the structure of the dispersion section 186. In this embodiment, the dispersion section 186 is further provided with a nozzle 187 as an extension. The following description will focus on the dispersion section 186 and the nozzle 187. The remaining structures are the same as those of the first embodiment, and therefore their description will be omitted. The low-temperature region (second region) in this embodiment is the central region of the wall 147a, described later.

[0140] In this embodiment, the dispersion unit 186 is replaced with Figure 3 A nozzle 187 is provided in the hole 186b. The nozzle 187 is connected to the supply pipe 181 via the dispersion unit 186. The nozzle 187 has a hole 187a for ejecting the inert gas. The hole 187a opens toward the wall 147a. The nozzle 187 extends along the ceiling.

[0141] Nozzle 187 can supply inert gas to at least the central portion (central area) of wall 147a. As mentioned above, the central portion of wall 147a is far from the RCs, so its temperature tends to drop, making it more likely for moisture to adhere. In contrast, this structure reliably supplies inert gas to the center of wall 147a, thereby removing moisture adhering to the central portion of wall 147a.

[0142] [Third embodiment]

[0143] Next, use Figure 9The third embodiment will be described. The third embodiment is different from the first embodiment in the structure of the dispersion portion 186. In this embodiment, the opening direction of the holes in the dispersion portion 186 is different. The following description will focus on the dispersion portion 186. In addition, the other structures are the same as those in the first embodiment, so the description will be omitted. In addition, the low-temperature region (second region) in this embodiment refers to a region composed of walls between multiple processing chambers or walls between a load lock chamber and a processing chamber as described later.

[0144] like Figure 9 As shown, in this embodiment, the dispersion portion 186 is provided with holes 186d, 186e, 186f, 186g, and 186h. Next, the opening directions of holes 186d through 186h will be described. As indicated by the arrows, each hole 186d through 186h is opened so as to supply inert gas to walls 191, 192, 193, 194, and 195, which serve as the low-temperature portion.

[0145] Next, walls 191, 192, 193, 194, and 195 will be described. As described above, the area near the RC in housing 141 reaches a high temperature due to the influence of heater 213. In particular, the temperature rises in connecting hole 148 and wall 141b, which form connecting hole 148 between the RC and the housing. However, walls 191, 192, 193, 194, and 195 between adjacent RCs or between an RC and the load lock chamber 130 are less susceptible to the influence of heater 213 and therefore have lower temperatures than those near connecting hole 148. In particular, when a cooler or cooling water flows through housing 141, the temperature between adjacent RCs or between an RC and the load lock chamber 130 reaches an even lower temperature. This makes it easier for moisture to adhere to these walls.

[0146] Therefore, in this embodiment, an inert gas is supplied to the portion so that moisture adhering to the wall between adjacent RCs or between the RC and the load lock chamber 130 can be removed.

[0147] Specifically, hole 186d is configured to face wall 191 adjacent to load lock chamber 130 and RC1 so that an inert gas can be supplied to wall 191. Hole 186e is configured to face wall 192 adjacent to RC2 and RC3 so that an inert gas can be supplied to wall 192. Hole 186f is configured to face wall 193 adjacent to RC4 and RC5 so that an inert gas can be supplied to wall 193. Hole 186g is configured to face wall 194 adjacent to RC6 and RC7 so that an inert gas can be supplied to wall 194. Hole 186h is configured to face wall 195 adjacent to load lock chamber 130 and RC8 so that an inert gas can be supplied to wall 195.

[0148] In dispersing section 186, surfaces opposing walls 191, 192, 193, 194, and 195 are provided so that holes 186d can form a section 186h. Holes 186d through 186h are provided on these surfaces. This structure reliably removes moisture adhering to the walls between adjacent RCs or between an RC and load-lock chamber 130. Furthermore, since walls 192, 193, 194, and 195 are located between the communicating holes, they are also referred to as "walls between communicating holes."

[0149] [Fourth embodiment]

[0150] Next, use Figure 10 、 Figure 11 The fourth embodiment is described. The fourth embodiment is different from the third embodiment in the structure of the dispersion portion 186. In this embodiment, a plurality of nozzles 188 (1) to 188 (3) are further provided in the dispersion portion 186 as extension portions. The following description will focus on the dispersion portion 186 and the nozzle 188. In addition, the other structures are the same as those in the third embodiment, so the description is omitted. In addition, the low-temperature region (second region) in this embodiment, as described later, represents a region composed of walls between a plurality of processing chambers or a wall between a load lock chamber and a processing chamber.

[0151] The dispersion portion 186 in this embodiment is provided with holes 186d and 186h as in the third embodiment. As in the third embodiment, the holes 186d can supply the inert gas to the wall 191 , and the holes 186h can supply the inert gas to the wall 195 .

[0152] Furthermore, a nozzle 188(1) is provided in place of the hole 186e, a nozzle 188(2) is provided in place of the hole 186f, and a nozzle 188(3) is provided in place of the hole 186g. Figure 11As shown, a hole 188b is provided at the tip of each nozzle 188. The hole 188b is arranged near the wall 192, the wall 193, and the wall 194, and is configured to supply the inert gas to the wall 192, the wall 193, and the wall 194.

[0153] By adopting such a structure, the inert gas can be reliably fed to the walls 192, 193, and 194. Therefore, the inert gas adhering to the low-temperature portion between the RCs can be removed more reliably.

[0154] In addition, if Figure 11 As described above, in each nozzle 188, a hole 188a may be provided between the hole 188b and the dispersion portion 186. Figure 8 The holes 187a described in the same manner are supplied to the wall 147a. By setting it as such a structure, it is possible to remove the moisture attached to the wall 147a.

[0155] In this embodiment, the inert gas is delivered from the wall 192 to the wall 194 using the nozzle 188. However, the present invention is not limited thereto. For example, the inert gas may be directly supplied from the wall 147a to the respective spaces. For example, the ceiling 147 may be provided with inert gas supply holes capable of supplying the inert gas to the upper portion of the respective spaces, and the inert gas may be supplied to the respective spaces from these inert gas supply holes.

[0156] [Other embodiments]

[0157] As mentioned above, although embodiment was demonstrated concretely, this technology is not limited to each embodiment mentioned above, Various changes are possible without departing from the range which concerns.

[0158] For example, in each of the above-mentioned embodiments, an example is shown in which monosilane gas is used as a gas containing a first element (first processing gas) and O2 gas is used as a gas containing a second element (second processing gas) to form a film in a film forming process performed by a substrate processing device, but the invention is not limited to this, and other types of gases can also be used to form other types of thin films.

[0159] In addition, although the example of supplying two gases is used here, the present invention is not limited to this, and a film may be formed by supplying one gas or three or more gases.

[0160] Explanation of symbols

[0161] 100—substrate, 130—load lock chamber, 140—transfer chamber, 146—moisture detection unit, 180—inert gas supply unit, PM—module, RC—reactor, 200—substrate processing apparatus, 201—processing chamber, 213—heater, RC—reactor, 400—controller.

Claims

1. A substrate processing device, characterized in that: have: a processing chamber having a heater; load lock chamber; a transfer chamber formed of a frame and disposed between the processing chamber and the load lock chamber, comprising a first region and a second region, the first region being located on the processing chamber side and disposed on a wall constituting the frame, the second region being disposed in a region of the wall constituting the frame that is different from the first region, being located closer to the load lock chamber than the first region, and having a lower temperature than the first region; a detection unit for detecting the amount of water in the transport chamber; and The inert gas supply unit can locally supply the inert gas toward the second region within the transfer chamber when the moisture content is equal to or greater than a predetermined value.

2. The substrate processing apparatus according to claim 1, wherein: The second area is an area constituting the ceiling of the transport chamber. The inert gas supply unit includes a supply hole capable of supplying the inert gas toward the second region of the transfer chamber.

3. The substrate processing apparatus according to claim 1, wherein: The ceiling of the transport chamber is provided with a window and a sealing member disposed between a wall constituting the ceiling and the window. The second area is the area constituting the ceiling. The inert gas supply unit includes a supply hole capable of supplying the inert gas to the wall constituting the ceiling.

4. The substrate processing apparatus according to claim 1, wherein: The ceiling of the transport chamber is provided with a window and a sealing member disposed between a wall constituting the ceiling and the window. The second area is an area where the sealing member is disposed. The inert gas supply portion includes a supply hole capable of supplying the inert gas to the sealing member.

5. The substrate processing apparatus according to claim 1, wherein The inert gas supply unit is provided with an extension unit that is connected to the inert gas supply unit and extends along the ceiling. The second area is the area constituting the ceiling. The extension portion has a supply hole capable of supplying an inert gas.

6. The substrate processing apparatus according to claim 1, wherein: The inert gas supply unit is provided with an extension unit which is connected to the inert gas supply unit and extends along the ceiling. The second area is the area constituting the ceiling. The extension portion has a supply hole capable of supplying the inert gas toward the ceiling.

7. The substrate processing apparatus according to claim 1, wherein: The inert gas supply unit is provided with an extension unit that is connected to the inert gas supply unit and extends along the ceiling. The second area is a central portion of the ceiling.

8. The substrate processing apparatus according to claim 1, wherein: The second region is a region constituting a wall adjacent to the load-lock chamber among the side walls of the housing constituting the transfer chamber.

9. The substrate processing apparatus according to claim 1, wherein: The second region is a region constituting a communication hole connecting the load lock chamber and the transfer chamber. The inert gas supply portion includes a supply hole capable of supplying the inert gas toward the communication hole.

10. The substrate processing apparatus according to claim 9, wherein: The supply hole is configured to have a width wider than that of the communication hole.

11. The substrate processing apparatus according to claim 10, wherein: The second region is a region formed by walls between the plurality of process chambers or a wall between the load lock chamber and the process chamber.

12. The substrate processing apparatus according to claim 1, wherein: The second region is a region formed by walls between a plurality of communication holes that connect the transfer chamber and the processing chamber.

13. The substrate processing apparatus according to claim 1, wherein The second region is a region formed by walls between a plurality of communication holes that connect the transfer chamber and the processing chamber. The inert gas supply unit is provided with supply holes above the wall so as to be able to supply the inert gas to the wall between the communication holes.

14. The substrate processing apparatus according to claim 1, wherein The second region is a region formed by the walls between the plurality of process chambers or the wall between the load lock chamber and the process chamber. The inert gas supply portion is provided with an extension portion which is communicated with the inert gas supply portion and extends toward the second region. The extending portion can supply an inert gas to the second region.

15. The substrate processing apparatus according to claim 1, wherein The inert gas supply unit includes a heater for heating the inert gas.

16. The substrate processing apparatus according to claim 1, wherein: The inert gas supply unit is controlled to alternately repeat supply and stop of the inert gas.

17. The substrate processing apparatus according to claim 1, wherein: The inert gas supply unit supplies the inert gas to the transfer chamber in a state where no substrate is present.

18. The substrate processing apparatus according to claim 1, wherein The inert gas supply unit stops supplying the inert gas to the transfer chamber if the amount of moisture detected by the detection unit becomes equal to or less than a predetermined value after the inert gas supply unit starts supplying the inert gas to the transfer chamber.

19. The substrate processing apparatus according to claim 1, wherein: A temperature adjustment medium is supplied to the wall of the transfer chamber.

20. A method for manufacturing a semiconductor device, characterized in that: The process includes the following steps: A step in which a moisture detection unit detects the amount of moisture in a transfer chamber formed of a frame and adjacent to the load lock chamber; a step of heating the substrate by a heater in a processing chamber adjacent to the transport chamber; A process of supplying an inert gas to a second area of ​​the wall constituting the frame body, which is different from the first area and has a lower temperature in the transfer chamber than a first area of ​​the wall constituting the frame body on the side of the processing chamber when the moisture content is greater than a predetermined value.

21. A recording medium recording a program to be executed by a computer in a substrate processing apparatus, characterized in that: The following steps are involved: The step of detecting the amount of moisture in a transfer chamber adjacent to the load lock chamber and formed of a frame, provided on a wall forming the frame; After the heater heats the substrate in the processing chamber adjacent to the above-mentioned conveying chamber, when the above-mentioned moisture content is greater than a predetermined value, a step of supplying an inert gas to a second area in the wall constituting the above-mentioned frame body, which is different from the above-mentioned first area and has a temperature lower than a first area on the processing chamber side of the wall constituting the above-mentioned frame body.

22. A processing method, characterized in that: The following steps are involved: The moisture detection unit detects the amount of moisture in a transfer chamber adjacent to the load lock chamber and formed of a frame; After the heater heats the substrate in the processing chamber adjacent to the above-mentioned conveying chamber, when the above-mentioned moisture content is greater than a predetermined value, a step of supplying an inert gas to a second area in the wall constituting the above-mentioned frame body, which is different from the above-mentioned first area and has a temperature lower than a first area on the processing chamber side of the wall constituting the above-mentioned frame body.

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