Deposition mask

Abstract

The present invention relates to a deposition mask including: a metal plate for deposition of an organic material of an organic light emitting diode pixel pattern; a plurality of small surface holes formed on one surface of the metal plate; a plurality of large surface holes formed on the other surface opposite to the one surface of the metal plate; and a plurality of through holes communicating the small surface holes and the large surface holes; wherein a height in a cross section of the small surface holes in a longitudinal direction of the metal plate is different from a height in a cross section of the small surface holes in a lateral direction of the metal plate.

Description

[0001] This application is a divisional application of the invention patent application with the application date of August 24, 2018 (entered into the Chinese national phase on March 6, 2020), the national application number of 201880058019.8 (the international application number of PCT / KR2018 / 009806), and the invention name of "Metal material deposition mask for OLED pixel deposition and manufacturing method thereof". TECHNICAL FIELD

[0002] Embodiments relate to a metal material deposition mask for organic light emitting diode (OLED) pixel deposition and a manufacturing method thereof. In particular, the deposition mask according to the embodiments is used to produce an OLED panel having a high resolution of 500 PPI or more. BACKGROUND

[0003] As display devices having high resolution and low power consumption are required, various display devices such as liquid crystal display devices and electroluminescent display devices have been developed.

[0004] As electroluminescent display devices have more excellent characteristics than liquid crystal display devices, such as lower light emission, lower power consumption, and higher resolution, etc., electroluminescent display devices have been attracting attention as next-generation display devices.

[0005] Among electric field display devices, there are organic light emitting display devices and inorganic light emitting display devices. That is, electric field display devices can be classified into organic light emitting display devices and inorganic light emitting display devices according to the material of the light emitting layer.

[0006] Among them, organic light emitting display devices have been attracting attention as they have a wide viewing angle, have a fast response speed, and need to have low power consumption.

[0007] An organic material constituting such a light emitting layer can be formed to have a pattern for forming a pixel on a substrate by a fine metal mask method.

[0008] In this case, the fine metal mask, that is, the deposition mask, can have a via hole corresponding to a pattern to be formed on the substrate, and patterns of red (R), green (G), and blue (B) forming a pixel can be formed by depositing an organic material after aligning the fine metal mask to the substrate.

[0009] Recently, various electronic devices such as virtual reality (VR) devices require display devices having ultra high definition (UHD). Therefore, a fine metal mask having a size-fine via hole capable of forming an ultra-high resolution (UHD level) pattern is required.

[0010] On a metal plate that can be used as a deposition mask, a plurality of via holes can be formed by an etching process.

[0011] At this time, when the surface roughness in the longitudinal direction of the metal plate is different from the surface roughness in the lateral direction of the metal plate, the adhesion of the photoresist layer disposed on the surface of the metal plate can be different from each other according to the direction. That is, when the deviation between the surface roughness in the longitudinal direction of the metal plate and the surface roughness in the lateral direction of the metal plate is large, a difference in the degree of etching according to the direction can occur due to the difference in the adhesion of the photoresist layer. Thus, it is not possible to form a via hole having a desired size, and thus there is a problem in that the uniformity of the aperture of the via hole can be reduced. In addition, in the deposition mask, the disappearance and non-uniformity of the island-shaped portion can occur due to the difference in the adhesion of the photoresist layer, and thus non-uniformity can occur between the via holes during the tension process before the pixel deposition, and thus there is a problem in that it is difficult to deposit the pixel at a target position using the deposition mask.

[0012] Therefore, there is a need for a deposition mask having a new structure capable of uniformly forming a high-resolution or ultra-high-resolution (UHD level) pattern having 500 PPI or more without deposition failure, and a method of manufacturing the same. SUMMARY

[0013] TECHNICAL PROBLEM

[0014] The embodiments are directed to providing a deposition mask capable of uniformly forming a high-resolution pattern having about 500 PPI or more or an ultra-high-resolution (UHD level) pattern having about 800 PPI or more without deposition failure, and a method of manufacturing the same.

[0015] In addition, the embodiments are directed to providing a metal plate capable of minimizing a warping phenomenon caused by internal stress.

[0016] In addition, the embodiments are directed to providing a method capable of effectively measuring the residual stress of a metal plate used in a process of manufacturing a deposition mask having a high resolution of 400 PPI or more. In detail, the embodiments are directed to providing a measurement method capable of measuring residual stress regardless of the thickness of a metal plate.

[0017] In addition, the embodiments are directed to providing a deposition mask capable of improving the uniformity of the position, shape, etc. of a via hole formed on a metal plate by minimizing internal stress.

[0018] In addition, the embodiments are directed to providing a deposition mask capable of minimizing length deformation such as total pitch deformation or relaxation during tension by securing rigidity.

[0019] Furthermore, the embodiments are directed to providing a deposition mask capable of uniformly depositing an OLED pixel pattern regardless of the position of a via hole while securing rigidity.

[0020] The technical problems to be solved by the proposed embodiments are not limited to the above technical problems, and other technical problems not mentioned can be clearly understood by those skilled in the art from the embodiments proposed from the following description.

[0021] Technical solutions

[0022] In a metal material deposition mask for OLED pixel deposition according to the embodiments of the present application, the deposition mask includes a deposition area for forming a deposition pattern and a non-deposition area other than the deposition area, wherein the deposition area includes a plurality of effective parts spaced apart in a longitudinal direction and a non-effective part other than the effective parts, wherein the effective parts include: a plurality of small surface holes formed on one surface; a plurality of large surface holes formed on another surface opposite to the one surface; through holes communicating the small surface holes and the large surface holes; and island-shaped parts located between the plurality of through holes, wherein the deposition mask has a resolution of 500 PPI or more, wherein the diameter of the through holes is 33 μm or less and the distance between the respective centers of two adjacent through holes in the through holes is 48 μm or less, the inclination angle of the large surface holes with respect to the other surface is 40 degrees to 55 degrees, the average center line average surface roughness in the longitudinal direction and the average center line average surface roughness in the lateral direction of the non-deposition area is 0.1 μm to 0.3 μm, the average 10-point average surface roughness Rz in the longitudinal direction and the average 10-point average surface roughness in the lateral direction of the non-deposition area is 0.5 μm to 2.0 μm, the value of the average center line average surface roughness in the longitudinal direction is less than 50% with respect to the average center line average surface roughness in the lateral direction, and the value of the average 10-point average surface roughness in the longitudinal direction is less than 50% with respect to the average 10-point average surface roughness in the lateral direction.

[0023] In addition, in the metal material deposition mask for OLED pixel deposition according to the embodiment of the present application, the deposition mask includes a deposition area for forming a deposition pattern and a non-deposition area other than the deposition area, wherein the deposition area includes a plurality of effective portions spaced apart in a longitudinal direction and a non-effective portion other than the effective portions, wherein the effective portions include: a plurality of small surface holes formed on one surface; a plurality of large surface holes formed on another surface opposite to the one surface; through holes communicating the small surface holes and the large surface holes; and island portions located between the plurality of through holes, wherein the deposition mask has a resolution of 500 PPI or more, wherein a diameter of the through holes is 33 μm or less and a distance between respective centers of two adjacent through holes among the through holes is 48 μm or less, an inclination angle of the large surface holes with respect to the another surface is 40 degrees to 55 degrees, an average centerline average surface roughness in the longitudinal direction and an average centerline average surface roughness in a lateral direction of the island portions are 0.1 μm to 0.3 μm, and an average 10-point average surface roughness Rz in the longitudinal direction and an average 10-point average surface roughness in the lateral direction of the non-deposition area are 0.5 μm to 2.0 μm, and a deviation of a value of the average centerline average surface roughness in the longitudinal direction with respect to the average centerline average surface roughness in the lateral direction is less than 50%, and a deviation of a value of the average 10-point average surface roughness in the longitudinal direction with respect to the average 10-point average surface roughness in the lateral direction is less than 50%.

[0024] In addition, a method of manufacturing a metal material deposition mask for OLED pixel deposition includes: a first step of preparing a metal plate on which rolling and annealing are performed and which has a predetermined thickness, wherein an average centerline average surface roughness and an average 10-point average surface roughness in a rolling direction are less than an average centerline average surface roughness and an average 10-point average surface roughness in a lateral direction; a second step of performing surface treatment on the metal plate such that the average centerline average surface roughness in the rolling direction and the average centerline average surface roughness in the lateral direction are in a range of 0.1 μm to 0.3 μm, respectively, and the average 10-point average surface roughness in the rolling direction and the average 10-point average surface roughness in the lateral direction are in a range of 0.5 μm to 2.0 μm, respectively; and a third step of forming a plurality of large surface holes, a plurality of small surface holes, and a plurality of through holes formed by the large surface holes and the small surface holes by coating and developing a patterned photoresist layer on a surface of the metal plate and etching the metal plate.

[0025] Advantageous Effects

[0026] According to embodiments, a deposition mask can be provided which can minimize deposition defects in a deposition mask made of a metal material for OLED pixel deposition having a resolution of 500 PPI or more.

[0027] According to embodiments, the roughness of a metal plate for manufacturing a deposition mask can have a deviation of 50% or less in a longitudinal direction and a lateral direction. Accordingly, the metal plate can improve adhesion to a photoresist layer regardless of the direction. Accordingly, the deposition mask according to embodiments can improve uniformity of an island-shaped portion and uniformity of a via size.

[0028] In addition, according to embodiments, a large surface hole of a via has a first cross-sectional inclination angle in a longitudinal direction and a second cross-sectional inclination angle greater than the first cross-sectional inclination angle in a lateral direction. Accordingly, in the deposition mask of embodiments, the thickness of a central portion of a rib arranged along the longitudinal direction can be increased by the difference between the first cross-sectional inclination angle and the second cross-sectional inclination angle. Accordingly, in embodiments, the rigidity of the deposition mask can be ensured. In addition, in embodiments, since the rigidity of the deposition mask is ensured, length distortion can be minimized. Furthermore, in embodiments, since the rigidity of the deposition mask is ensured, the uniformity of a shape of a mask pattern and the uniformity of a position of a via can be increased. Furthermore, in embodiments, due to the increase in uniformity, the pattern deposition efficiency of the deposition mask can be improved.

[0029] In addition, according to embodiments, the inclination angle of a large surface hole of a via arranged in a direction perpendicular to a moving direction of an organic material deposition vessel is reduced. Accordingly, the deposition mask according to embodiments can uniformly deposit an OLED pixel pattern in all regions regardless of the position of a via. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 FIG. 1 is a perspective view illustrating an organic material deposition apparatus including a deposition mask according to embodiments.

[0031] Figures 2 to 4 FIG. 2 is a conceptual view describing a process of depositing an organic material on a substrate using a deposition mask according to embodiments.

[0032] Figure 5 FIG. 3 is a view illustrating a plan view of a deposition mask according to embodiments.

[0033] Figure 6a FIG. 4 is a view illustrating a plan view of an effective portion of a deposition mask.

[0034] Figure 6b FIG. 5 is a photograph illustrating a plan view of an effective portion of a deposition mask.

[0035] Figure 6c is a cross-sectional view taken along line A-A' and a view in which cross-sectional views taken along lines B-B' overlap. Figure 6a or Figure 6b is a view in which cross-sectional views taken along lines A-A' and B-B' overlap.

[0036] Figure 7 is a view showing another plan view of a deposition mask according to an embodiment.

[0037] Figure 8 is a cross-sectional view taken along line B-B' of the deposition mask according to an embodiment. Figure 6a or Figure 6b is a cross-sectional view taken along line B-B' of the deposition mask according to an embodiment.

[0038] Figure 9 is a view showing a rolling step of a metal material.

[0039] Figure 10 and Figure 11 is a view showing a metal plate having a predetermined thickness after rolling and annealing of Figure 9 .

[0040] Figure 12 and Figure 13 are SEM photographs of a metal plate according to Figure 11 .

[0041] Figure 14 is a view showing steps of preparing a metal plate having a predetermined thickness and etching the metal plate to be thinner than the predetermined thickness to have a surface roughness of an embodiment.

[0042] Figure 15 and Figure 16 are SEM photographs of a non-deposition area of a deposition mask according to an embodiment.

[0043] Figure 17 is a view showing a manufacturing process of a deposition mask according to an example.

[0044] Figure 18 is a graph showing measured values of roughness of a non-deposition area of a deposition mask according to an example in a longitudinal direction, a diagonal direction, and a lateral direction.

[0045] Figure 19 is a view showing adhesion of a photoresist layer depending on surface roughness of a non-deposition area of a deposition mask according to an example.

[0046] Figure 20 is a view showing a shape obtained by performing semi-etching on one surface of a metal plate to evaluate a shape of an island-shaped portion of a deposition mask according to an example.

[0047] Figure 21is a graph showing measured values of roughness in a longitudinal direction, a diagonal direction, and a lateral direction of a non-deposited region of a deposition mask according to a comparative example.

[0048] Figure 22 is a view showing adhesion of a photoresist layer depending on surface roughness of a non-deposited region of a deposition mask according to a comparative example.

[0049] Figure 23 is a view showing a shape obtained by performing semi-etching on one surface of a metal plate to evaluate a shape of an island-shaped portion of a deposition mask according to a comparative example.

[0050] Figure 24 is a view showing a metal plate that has been wound as a raw material of a deposition mask.

[0051] Figure 25 is a view for describing a conventional residual stress measurement method.

[0052] Figure 26 is a view for describing a sample metal plate manufactured from a metal plate according to an example.

[0053] Figure 27 is a view for describing a residual stress measurement method according to an example.

[0054] Figure 28 and Figure 29 is a view showing a deposition pattern formed by a deposition mask according to an embodiment.

[0055] Figure 30 is a view showing a plan view of an effective portion of a deposition mask according to another embodiment of the present application.

[0056] Figure 31 is a view in which respective cross sections overlap so as to describe a height difference and a dimension between a cross section taken along line A-A’ in Figure 30 and a cross section taken along line B-B’ in Figure 30 .

[0057] Figure 32 is a view showing a cross-sectional view along line B-B’ in Figure 30 .

[0058] Figure 33 is a view showing a cross-sectional view along line C-C’ in Figure 30 .

[0059] Figure 34 is a view showing a cross-sectional view along line D-D’ in Figure 30 .

[0060] Figure 35 is a view showing a plan view of an effective portion of a deposition mask according to still another embodiment of the present application.

[0061] Figure 36 is a cross-sectional view showing a second via hole in Figure 35 .

[0062] Figure 37 is a cross-sectional view showing a third via hole in Figure 35 . DETAILED DESCRIPTION

[0063] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings.

[0064] However, the spirit and scope of the present application are not limited to a part of the described embodiments, and can be implemented in various other forms, and one or more elements in the embodiments can be selectively combined and replaced within the spirit and scope of the present application.

[0065] In addition, unless explicitly defined and described otherwise, the terms used in the embodiments of the present application, including technical terms and scientific terms, can be interpreted the same as the meanings commonly understood by those having ordinary knowledge in the art to which the present application pertains, and such terms as defined in a generally used dictionary can be interpreted as having meanings consistent with the meanings in the context of the relevant technology. Also, the terms used in the embodiments of the present application are used to describe the embodiments and not intended to limit the present application.

[0066] In this specification, unless specifically stated otherwise in the wording, the singular form can also include the plural form, and can include at least one of all combinations when described in "at least one of A (and), B, and C" or the like. Also, in describing elements of the embodiments of the present application, terms such as first, second, A, B, (a), and (b) can be used.

[0067] These terms are used only to distinguish elements from other elements, and the terms are not limited to the essence, order, or sequence of the elements. In addition, when an element is described as being "connected", "coupled", or "connected" to another element, it can not only include the case where the element is directly "connected", "coupled", or "connected" to the other element, but also include the case where the element is "connected", "coupled", or "connected" to the other element through another element between the element and the other element.

[0068] Further, when described as being formed or disposed "on (above)" or "under (below)" each element, "on (above)" or "under (below)" can include not only a case where two elements are directly connected to each other, but also a case where one or more other elements are formed or disposed between the two elements. Further, when indicated as "on (above)" or "under (below)", it can include not only an upward direction but also a downward direction based on one element.

[0069] A process of depositing an organic material on a substrate using a deposition mask according to an embodiment will be described with reference to Figures 1 to 4

[0070] Referring to Figures 1 to 4 , the organic material deposition apparatus can include a deposition mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

[0071] The deposition mask 100 can include a metal. For example, the deposition mask can include iron (Fe) and nickel (Ni). The deposition mask 100 can include a plurality of through holes TH at an effective portion for deposition. The deposition mask 100 can be a substrate for a deposition mask including a plurality of through holes TH. At this time, the through holes can be formed to correspond to a pattern to be formed on the substrate. The deposition mask 100 can include a non-effective portion in addition to the effective portion including a deposition area.

[0072] The mask frame 200 can include an opening 205. The plurality of through holes of the deposition mask 100 can be disposed on an area corresponding to the opening 205. Accordingly, the organic material supplied to the organic material deposition container 400 can be deposited on the substrate 300. The deposition mask can be drawn and fixed on the mask frame 200, for example, by welding.

[0073] That is, the mask frame 200 includes a plurality of frames 201, 202, 203, and 204 surrounding the opening 205. The plurality of frames 20, 202, 203, and 204 can be connected to each other. The mask frame 200 faces each other in the x direction and includes a first frame 201 and a second frame 202 extending in the y direction. Further, the mask frame 200 faces each other in the y direction and includes a third frame 203 and a fourth frame 204 extending in the x direction. The first frame 201, the second frame 202, the third frame 203, and the fourth frame 204 can be rectangular frames connected to each other. The mask frame 200 can be made of a material that is less deformed during welding of the deposition mask 130, for example, a metal having high rigidity.

[0074] Referring to Figure 2 and Figure 3 ​During the deposition process, the deposition mask 100 can be pulled in opposite directions at the ends provided on the outermost portion of the deposition mask 100. In the deposition mask 100, one end and the other end opposite to the one end of the deposition mask 100 can be pulled in opposite directions in the longitudinal direction of the deposition mask 100. As an example, the stretching direction, the x-axis direction, and the longitudinal direction of the deposition mask 100 can all be the same direction. The one end and the other end of the deposition mask 100 can face each other and be provided in parallel. The one end of the deposition mask 100 can be one of the end portions forming the four side surfaces provided on the outermost portion of the deposition mask 100. For example, the deposition mask 100 can be pulled with a tension of 0.1 kgf to 2 kgf. In particular, the deposition mask 100 can be pulled with a tension of 0.4 kgf to 1.5 kgf to be fixed to the mask frame 200. Accordingly, the stress of the deposition mask 100 can be reduced. However, embodiments are not limited thereto, and the deposition mask 100 can be pulled by various tensions that can reduce the stress thereof to be fixed to the mask frame 200.

[0075] Then, the deposition mask 100 can be fixed to the mask frame 200 by welding the non-active portion of the deposition mask 100. Subsequently, the portion of the deposition mask 100 provided outside the mask frame 200 can be removed by a method such as cutting.

[0076] The substrate 300 can be a substrate for manufacturing a display device. For example, the substrate 300 can be a substrate 300 for depositing an organic material for an OLED pixel pattern. Patterns of red (R), green (G), and blue (B) can be formed on the substrate 300 to form pixels that are three primary colors of light. That is, an RGB pattern can be formed on the substrate 300.

[0077] The organic material deposition vessel 400 can be a crucible. An organic material can be provided inside the crucible. The organic material deposition vessel 400 can move in the vacuum chamber 500. That is, the organic material deposition vessel 400 can move in the vacuum chamber 500 in the y-axis direction. That is, the organic material deposition vessel 400 can move in the vacuum chamber 500 in the lateral direction of the deposition mask 100. That is, the organic material deposition vessel 400 can move in the vacuum chamber 500 in a direction perpendicular to the stretching direction of the deposition mask 100.

[0078] When a heat source and / or an electric current are supplied to the crucible that is the organic deposition vessel 400 in the vacuum chamber 500, an organic material can be deposited on the substrate 100.

[0079] Figure 4 is a view illustrating that a plurality of deposition patterns are formed on the substrate 300 through a plurality of through-holes of the deposition mask 100.

[0080] The deposition mask 100 can include a first surface 101 and a second surface 102 facing the first surface.

[0081] The first surface 101 of the deposition mask 100 can include a small surface hole V1, and the second surface 102 of the deposition mask 100 can include a large surface hole V2. The through hole can be communicated by a communication part CA to which the boundary of the small surface hole V1 and the large surface hole V2 is connected.

[0082] The deposition mask 100 can include a first etching surface ES1 in the small surface hole V1. The deposition mask 100 can include a second etching surface ES2 in the large surface hole V2. The through hole can be formed by communicating the first etching surface ES1 in the small surface hole V1 with the second etching surface ES2 in the large surface hole V2. For example, the first etching surface ES1 in one small surface hole V1 can be communicated with the second etching surface ES2 in one large surface hole V2 to form one through hole.

[0083] The width of the large surface hole V2 can be greater than the width of the small surface hole V1. At this time, the width of the small surface hole V1 can be measured at the first surface 101, and the width of the large surface hole V2 can be measured at the second surface 102.

[0084] The small surface hole V1 can be disposed toward the substrate 300. The small surface hole V1 can be disposed close to the substrate 300. Accordingly, the small surface hole V1 can have a shape corresponding to the deposition material, that is, the deposition pattern DP.

[0085] The large surface hole V2 can be disposed toward the organic material deposition container 400. Accordingly, the large surface hole V2 can accommodate the organic material supplied from the organic material deposition container 400 with a wide width, and can rapidly form a fine pattern on the substrate 300 through the small surface hole V1 having a width smaller than the width of the large surface hole V2.

[0086] Figure 5 is a view showing a plan view of a deposition mask according to an embodiment. Referring to Figure 5 The deposition mask according to an embodiment can include a deposition area DA and a non-deposition area NDA.

[0087] The deposition area DA can be an area for forming a deposition pattern. One deposition mask can include a plurality of deposition areas DA. For example, the deposition area DA of the embodiment can include a plurality of active parts AA1, AA2, and AA3 capable of forming a plurality of deposition patterns.

[0088] The plurality of active parts can include a first active part AA1, a second active part AA2, and a third active part AA3. One deposition area DA can be any one of the first active part AA1, the second active part AA2, and the third active part AA3.

[0089] In the case of a small display device such as a smart phone, the active part of any one of the plurality of deposition areas included in the deposition mask can be an active part for forming one display device. Accordingly, one deposition mask can include a plurality of active parts to simultaneously form a plurality of display devices. Accordingly, the deposition mask according to the embodiment can improve processing efficiency.

[0090] Alternatively, in the case of a large display device such as a television, the plurality of active parts included in one deposition mask can be a part for forming one display device. In this case, the plurality of active parts can be used to prevent deformation due to the load of the mask.

[0091] The deposition area DA can include a plurality of isolation areas IA1 and IA2 included in one deposition mask. The isolation areas IA1 and IA2 can be disposed between adjacent active parts. The isolation areas IA1 and IA2 can be spacing areas between the plurality of active parts. For example, the first isolation area IA1 can be disposed between the first active part AA1 and the second active part AA2. For example, the second isolation area IA2 can be disposed between the second active part AA2 and the third active part AA3. The isolation areas can distinguish adjacent active areas, and the plurality of active parts can be supported by one deposition mask.

[0092] The isolation areas IA1 and IA2 can have the same height as the island-shaped part, the non-deposition area, or the non-active area. The isolation areas IA1 and IA2 can be areas that are not etched when a via hole is formed.

[0093] The deposition mask can include a non-deposition area NDA on both sides in the longitudinal direction of the deposition area DA. The deposition mask according to the embodiment can include a non-deposition area NDA on both sides in the horizontal direction of the deposition area DA.

[0094] The non-deposition area NDA of the deposition mask can be an area that does not participate in deposition. The non-deposition area NDA can include frame fixing areas FA1 and FA2 for fixing the deposition mask to a mask frame. For example, the non-deposition area NDA of the deposition mask can include a first frame fixing area FA1 on one side of the deposition area DA, and can include a second frame fixing area FA2 on the other side opposite to the one side of the deposition area DA. The first frame fixing area FA1 and the second frame fixing area FA2 can be areas fixed to the mask frame by welding.

[0095] The non-deposition area NDA can include the half-etching portions HF1 and HF2. For example, the non-deposition area NDA of the deposition mask can include the first half-etching portion HF1 at one side of the deposition area DA, and can include the second half-etching portion HF2 at the other side opposite to the one side of the deposition area DA. The first half-etching portion HF1 and the second half-etching portion HF2 can be areas in which grooves are formed in a depth direction of the deposition mask. The first half-etching portion HF1 and the second half-etching portion HF2 can have grooves with a thickness of about 1 / 2 of the deposition mask, thereby dispersing stress when the deposition mask is pulled.

[0096] The half-etching portions can be simultaneously formed when forming the small surface holes or the large surface holes. Accordingly, the processing efficiency can be improved.

[0097] A surface treatment layer different from a material of the metal plate can be formed in the deposition area DA of the deposition mask, and the surface treatment layer can not be formed in the non-deposition area NDA. Alternatively, the surface treatment layer different from the material of the metal plate can be formed only on one surface of the deposition mask or the other surface opposite to the one surface. Alternatively, the surface treatment layer different from the material of the metal plate can be formed only on a part of one surface of the deposition mask. For example, one surface and / or the other surface of the deposition mask, and the entire portion and / or the part of the deposition mask can include the surface treatment layer having an etching rate lower than that of the material of the metal plate, thereby improving an etching factor. Accordingly, the deposition mask of the embodiment can efficiently form a via hole having a fine size. As an example, the deposition mask of the embodiment can efficiently form a deposition pattern having a high resolution of 500 PPI or more. Here, the surface treatment layer can include a material different from the material of the metal plate, or can include a metal material having a different composition of the same element.

[0098] The half-etching portions can be formed in the non-active portion UA of the deposition area DA. The half-etching portions can be dispersed in all or a part of the non-active portion UA to be arranged as a plurality in order to disperse stress when the deposition mask is pulled.

[0099] In addition, the half-etching portions can be formed in the frame fixing area and / or the outer circumferential area of the frame fixing area. Accordingly, stress of the deposition mask generated when the deposition mask is fixed to the mask frame and / or when a deposition material is deposited after the deposition mask is fixed to the mask frame can be uniformly dispersed. Accordingly, the deposition mask can be maintained to have uniform via holes.

[0100] The frame fixing regions FA1 and FA2 of the mask frame for fixing to the non-deposition region NDA can be disposed between the half-etching portions HF1 and HF2 of the non-deposition region NDA and the active portions of the deposition region DA adjacent to the half-etching portions HF1 and HF2. For example, the first frame fixing region FA1 can be disposed between the first half-etching portion HF1 of the non-deposition region NDA and the first active portion AA1 of the deposition region DA adjacent to the first half-etching portion HF1. For example, the second frame fixing region FA2 can be disposed between the second half-etching portion HF2 of the non-deposition region NDA and the third active portion AA3 of the deposition region DA adjacent to the second half-etching portion HF2. Accordingly, a plurality of deposition pattern portions can be fixed at the same time.

[0101] The deposition mask can include a semi-circular opening portion at both ends in the horizontal direction X. The non-deposition region NDA of the deposition mask can include one semi-circular opening portion at each of both ends in the horizontal direction. For example, the non-deposition region NDA of the deposition mask can include an opening portion whose center in the vertical direction Y is open on one side in the horizontal direction. For example, the non-deposition region NDA of the deposition mask can include an opening portion whose center in the vertical direction is open on the other side opposite to one side in the horizontal direction. That is, both ends of the deposition mask can include an opening portion at a point of 1 / 2 of the length in the vertical direction. For example, both ends of the deposition mask can be shaped like a horse's hoof.

[0102] The half-etching portion included in the deposition mask of the embodiment can be formed in various shapes. The half-etching portion can include a semi-circular groove portion. The groove can be formed on at least one of one surface of the deposition mask and the other surface opposite to the one surface. Preferably, the half-etching portion can be formed on a surface (a surface side to be deposited) corresponding to a small surface hole. Accordingly, the half-etching portion can be simultaneously formed to have a small surface hole, thereby improving the processing efficiency. In addition, the half-etching portion can disperse stress that can be generated due to a size difference between large surface holes.

[0103] Alternatively, a half-etching portion can be formed at both sides of the deposition mask to disperse stress of the deposition mask. In this case, a half-etching area of the half-etching portion can be widened in a plane corresponding to the first surface hole (a surface side to be deposited). That is, the deposition mask according to the embodiment can include the half-etching portion because the grooves are respectively formed on the first surface and the second surface of the deposition mask. In detail, the depth of the groove of the half-etching portion formed on the first surface can be greater than the depth of the groove of the half-etching portion formed on the second surface. Accordingly, the half-etching portion can disperse stress that can occur due to a size difference between the small surface hole and the large surface hole. The formation of the small surface hole, the large surface hole, and the half-etching portion can make the surface areas on the first surface and the second surface of the deposition mask similar to each other, thereby preventing the via hole from being shifted.

[0104] In addition, the grooves formed on the first surface and the second surface can be formed to be shifted with respect to each other. Accordingly, the half-etching portion can not pass through.

[0105] The half-etching portion can include a curved surface and a flat surface. The flat surface of the first half-etching portion HF1 can be disposed adjacent to the first active area AA1, and the flat surface can be horizontally disposed to have an end in a longitudinal direction of the deposition mask. The curved surface of the first half-etching portion HF1 can have a convex shape toward one end in the longitudinal direction of the deposition mask. For example, the curved surface of the first half-etching portion HF1 can be formed such that a 1 / 2 point of a length in a vertical direction of the deposition mask corresponds to a radius of a semicircle.

[0106] The flat surface of the second half-etching portion HF2 can be disposed adjacent to the third active area AA3, and the flat surface can be horizontally disposed to have an end in a longitudinal direction of the deposition mask. The curved surface of the second half-etching portion HF2 can have a convex shape toward the other end in the longitudinal direction of the deposition mask. For example, the curved surface of the second half-etching portion HF2 can be formed such that a 1 / 2 point of a length in a vertical direction of the deposition mask corresponds to a radius of a semicircle.

[0107] Meanwhile, the curved surfaces of the opening portions positioned at both ends of the deposition mask can be directed toward the half-etching portion. Accordingly, the opening portions at both ends of the deposition mask can have the shortest separation distance at the 1 / 2 point of the length in the vertical direction of the deposition mask and the first or second half-etching portion.

[0108] Although not shown in the drawings, the half-etching portion can have a quadrilateral shape. The first half-etching portion HF1 and the second half-etching portion HF2 can have a rectangular or square shape.

[0109] The deposition mask according to the embodiments can include a plurality of semi-etching portions. The deposition mask according to the embodiments can include a plurality of semi-etching portions in at least one of the deposition area DA and the non-deposition area NDA. The deposition mask according to the embodiments can include semi-etching portions only in the unactive portion UA. The unactive portion UA can be an area other than the active portion AA.

[0110] The deposition mask according to the embodiments can include two semi-etching portions. Although not shown in the drawings, the deposition mask according to the embodiments can include four semi-etching portions. For example, the semi-etching portions can include an even number of semi-etching portions, thereby effectively dispersing stress. The deposition mask according to the embodiments can be disposed only in the non-deposition area NDA.

[0111] It is preferable to form the semi-etching portions to be symmetrical in the X-axis direction or the Y-axis direction with respect to the center of the mask. By so doing, the tensile forces in both directions can be equalized.

[0112] The length d1 in the vertical direction of the first semi-etching portion HF1 or the second semi-etching portion HF2 can correspond to the length d2 in the vertical direction of the opening portion. Thus, when the deposition mask is drawn, stress can be uniformly dispersed, thereby reducing deformation (wave deformation) of the deposition mask. Accordingly, the deposition mask according to the embodiments can have a uniform through-hole, thereby improving the deposition efficiency of a pattern. Preferably, the length d1 in the vertical direction of the first semi-etching portion HF1 or the second semi-etching portion HF2 can be about 80% to 200% of the length d2 in the vertical direction of the opening portion (d1:d2=0.8 to 2:1). The length d1 in the vertical direction of the first semi-etching portion HF1 or the second semi-etching portion HF2 can be about 90% to about 150% of the length d2 in the vertical direction of the opening portion (d1:d2=0.9 to 1.5:1). The length d1 in the vertical direction of the first semi-etching portion HF1 or the second semi-etching portion HF2 can be about 95% to about 110% of the length d2 in the vertical direction of the opening portion (d1:d2=0.95 to 1.1:1).

[0113] The deposition mask can include a plurality of active portions AA1, AA2, and AA3 spaced apart in the longitudinal direction and an unactive portion UA other than the active portions.

[0114] The effective portions AA1, AA2, and AA3 of the deposition mask can include a plurality of through holes TH and island-shaped portions IS supported between the plurality of through holes TH. The island-shaped portion IS can refer to a portion that is not etched in one surface or the other surface of the effective portion of the deposition mask when the through hole is formed. In detail, the island-shaped portion IS can be an unetched area between the through holes on the other surface of the large surface hole on which the effective portion of the deposition mask is formed. Accordingly, the island-shaped portion IS can be disposed in parallel to one surface of the deposition mask.

[0115] The island-shaped portion IS can be disposed in parallel to the other surface of the deposition mask. Accordingly, the island-shaped portion IS can have the same thickness as at least a portion of the non-effective portion on the other surface of the deposition mask. In detail, the island-shaped portion IS can have the same thickness as the unetched portion of the non-effective portion on the other surface of the deposition mask. Accordingly, the deposition uniformity of the sub-pixel can be improved by the deposition mask.

[0116] Alternatively, the island-shaped portion IS can be disposed in a flat surface in parallel to the other surface of the deposition mask. Here, the flat surface in parallel can include that, by the etching process around the island-shaped portion IS, the height difference of the other surface of the deposition mask on which the island-shaped portion IS and the non-effective portion are disposed and the other surface of the unetched deposition mask is ±1 µm or less.

[0117] The island-shaped portion IS can be located between adjacent through holes of the plurality of through holes. That is, the area other than the through hole can be the island-shaped portion IS in the effective portions AA1, AA2, and AA3 of the deposition mask 100.

[0118] The effective portions AA1, AA2, and AA3 can include a plurality of small surface holes V1 formed on one surface of the deposition mask 100, a plurality of large surface holes V2 formed on the other surface opposite to the one surface, and a through hole TH formed by a communication portion CA in which a boundary between the small surface hole and the large surface hole is connected.

[0119] The deposition mask 100 can include a non-effective portion UA disposed at the outer periphery of the effective area.

[0120] The effective portion AA can be an inner area to which the outer periphery of the through hole for depositing the organic material located at the outermost portion among the plurality of through holes is connected. The non-effective portion UA can be an outer area to which the outer periphery of the through hole for depositing the organic material located at the outermost portion among the plurality of through holes is connected.

[0121] The non-effective portion UA is an area other than the effective area of the deposition area DA and the non-deposition area NDA. The non-effective portion UA can include outer areas OA1, OA2, and OA3 surrounding the outer periphery of the effective portions AA1, AA2, and AA3.

[0122] The deposition mask according to the embodiments can include a plurality of outer areas OA1, OA2, and OA3. The number of outer areas can correspond to the number of active parts. That is, one active part can include one outer area spaced apart from an end of one active part by a predetermined distance in a horizontal direction and a vertical direction.

[0123] The first active part AA1 can be included in the first outer area OA1. The first active part AA1 can include a plurality of through holes for forming a deposition material. The first outer area OA1 surrounding an outer periphery of the first active part AA1 can include a plurality of through holes.

[0124] The shape of the through hole TH of the first active part AA1 can correspond to the shape of the through hole of the first outer area OA1. Accordingly, uniformity of the through hole included in the first active part AA1 can be improved. For example, the shape of the through hole TH of the first active part AA1 and the shape of the through hole of the first outer area OA1 can be circular. However, the embodiments are not limited thereto, and the through hole can have various shapes such as a diamond pattern, an elliptical pattern, etc.

[0125] The plurality of through holes included in the first outer area OA1 serve to reduce etching failure of the through hole located at an outermost portion of the active part. Accordingly, the deposition mask according to the embodiments can improve uniformity of the plurality of through holes located in the active part, and can improve the quality of a deposition pattern formed by the deposition mask.

[0126] The shape of the through hole included in the active part can partially correspond to the shape of the through hole included in the non-active part. As an example, the through hole included in the active part can have a shape different from the shape of the through hole located at an edge portion of the non-active part. Accordingly, a stress difference can be adjusted according to the position of the deposition mask.

[0127] The second active part AA2 can be included in the second outer area OA2. The second active part AA2 can have a shape corresponding to the first active part AA1. The second outer area OA2 can have a shape corresponding to the first outer area OA1.

[0128] The second outer area OA2 can further include two vias in the horizontal direction and the vertical direction, respectively, from a via located at the outermost portion of the second active portion AA2. For example, in the second outer area OA2, two vias can be arranged in a row in the horizontal direction at the upper and lower portions of the via located at the outermost portion of the second active portion AA2, respectively. For example, in the second outer area OA2, two vias can be arranged in a row in the vertical direction at the left and right sides of the via located at the outermost portion of the second active portion AA2, respectively. The plurality of vias included in the second outer area OA2 serves to reduce etching failure of the via located at the outermost portion of the active portion. Accordingly, the deposition mask according to the embodiment can improve the uniformity of the plurality of vias in the active portion, and can improve the quality of the deposition pattern manufactured by the deposition mask.

[0129] The third active portion AA3 can be included in the third outer area OA3. The third active portion AA3 can include a plurality of vias for forming a deposition material. The third outer area OA3 surrounding the outer periphery of the third active portion AA3 can include a plurality of vias.

[0130] The third active portion AA3 can have a shape corresponding to the shape of the first active portion AA1. The third outer area OA3 can have a shape corresponding to the shape of the first outer area OA1.

[0131] The value of the surface roughness measured in the non-deposition area NDA of the deposition mask according to the embodiment, except for the half-etching portions HF1 and HF2, can have a predetermined range in a diagonal direction located at about 45 degrees on the longitudinal direction (x direction) and the lateral direction (y direction). The diagonal direction can be an inclined direction of about +45 degrees or about -45 degrees, and can refer to the angle between the x direction and the y direction. The diagonal direction can include an angle between +40 degrees and +50 degrees or between -40 degrees and -50 degrees.

[0132] In the non-deposited area DA, the average center line average surface roughness in the longitudinal direction, the average center line average surface roughness in the about +45 degree direction on the diagonal, the average center line average surface roughness in the about -45 degree direction on the diagonal, and the average center line average surface roughness in the lateral direction can be 0.1 pm to 0.3 pm, and in the non-deposited area DA, the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the about +45 degree direction on the diagonal, the average 10-point average surface roughness in the about -45 degree direction on the diagonal, and the average 10-point average surface roughness in the lateral direction can be 0.5 pm to 2.0 pm. For example, in the non-deposited area DA, the average center line average surface roughness in the longitudinal direction, the average center line average surface roughness in the about +45 degree direction on the diagonal, the average center line average surface roughness in the about -45 degree direction on the diagonal, and the average center line average surface roughness in the lateral direction can be 0.1 pm to 0.2 pm, and in the non-deposited area DA, the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the about +45 degree direction on the diagonal, the average 10-point average surface roughness in the about -45 degree direction on the diagonal, and the average 10-point average surface roughness in the lateral direction can be 0.5 pm to 1.5 pm. For example, in the non-deposited area DA, the average center line average surface roughness in the longitudinal direction, the average center line average surface roughness in the about +45 degree direction on the diagonal, the average center line average surface roughness in the about -45 degree direction on the diagonal, and the average center line average surface roughness in the lateral direction can be 0.1 pm to 0.15 pm, and in the non-deposited area DA, the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the about +45 degree direction on the diagonal, the average 10-point average surface roughness in the about -45 degree direction on the diagonal, and the average 10-point average surface roughness in the lateral direction can be 0.5 pm to 1.0 pm.

[0133] In an OLED deposition mask of an embodiment having a Quad High Definition (QHD)-level resolution of 500 PPI or more, a diameter of the through-hole can be 33 pm or less, a distance between each center of two adjacent through-holes of the plurality of through-holes can be 48 pm or less, an inclination angle of the large surface hole with respect to the other surface can be 40 degrees to 55 degrees, a deviation of a value of an average center line's average surface roughness in a longitudinal direction (Ra(RD)) with respect to an average center line's average surface roughness in a lateral direction (Ra(TD)) ((|(Ra(RD)-Ra(TD))| / Ra(TD) x 100(%))) can be less than 50%, and a deviation of a value of an average 10-point's average surface roughness in the longitudinal direction (Rz(RD)) with respect to an average 10-point's average surface roughness in the lateral direction (Rz(TD)) ((|(Rz(RD)-Rz(TD))| / Rz(TD) x 100(%))) can be less than 50%.

[0134] In an OLED deposition mask of an embodiment having a UHD-level resolution of 800 PPI or more, a diameter of the through-hole can be 20 pm or less, an inclination angle of the large surface hole with respect to the other surface can be 45 degrees to 55 degrees, a distance between each center of two adjacent through-holes of the plurality of through-holes can be 32 pm or less, a deviation of a value of an average center line's average surface roughness in a longitudinal direction (Ra(RD)) with respect to an average center line's average surface roughness in a lateral direction (Ra(TD)) ((|(Ra(RD)-Ra(TD))| / Ra(TD) x 100(%))) can be 30% or less, and a deviation of a value of an average 10-point's average surface roughness in the longitudinal direction (Rz(RD)) with respect to an average 10-point's average surface roughness in the lateral direction (Rz(TD)) ((|(Rz(RD)-Rz(TD))| / Rz(TD) x 100(%))) can be 30% or less. For example, the deviation of the value of the average center line's average surface roughness in the longitudinal direction (Ra(RD)) with respect to the average center line's average surface roughness in the lateral direction (Ra(TD)) ((|(Ra(RD)-Ra(TD))| / Ra(TD) x 100(%))) can be 15% or less, and the deviation of the value of the average 10-point's average surface roughness in the longitudinal direction (Rz(RD)) with respect to the average 10-point's average surface roughness in the lateral direction (Rz(TD)) ((|(Rz(RD)-Rz(TD))| / Rz(TD) x 100(%))) can be 15% or less.

[0135] For example, the value of the average surface roughness (Ra(RD)) of the average center line in the longitudinal direction can have a deviation ((|(Ra(RD)-Ra(TD))| / Ra(TD) x 100(%)) of 13% or less with respect to the average surface roughness (Ra(TD)) of the average center line in the lateral direction, and the value of the average 10-point average surface roughness (Rz(RD)) in the longitudinal direction can have a deviation ((|(Rz(RD)-Rz(TD))| / Rz(TD) x 100(%)) of 10% or less with respect to the average 10-point average surface roughness (Rz(TD)) in the lateral direction.

[0136] The deposition area can include a non-effective portion in a region other than the effective portion, and in the surface roughness of the island-shaped portion in the non-effective portion, the average center line average surface roughness in the longitudinal direction, the average center line average surface roughness in the diagonal direction, and the average center line average surface roughness in the lateral direction can be 0.1 μm to 0.3 μm, and the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction can be 0.5 μm to 2.0 μm, the value of the average surface roughness (Ra(RD)) of the average center line in the longitudinal direction can have a deviation ((|(Ra(RD)-Ra(TD))| / Ra(TD) x 100(%)) of less than 50% with respect to the average surface roughness (Ra(TD)) of the average center line in the lateral direction, and the value of the average 10-point average surface roughness (Rz(RD)) in the longitudinal direction can have a deviation ((|(Rz(RD)-Rz(TD))| / Rz(TD) x 100(%)) of less than 50% with respect to the average 10-point average surface roughness (Rz(TD)) in the lateral direction.

[0137] Alternatively, in the surface roughness of the island portion in the non-effective portion, the average center line average surface roughness in the longitudinal direction, the average center line average surface roughness in the diagonal direction, and the average center line average surface roughness in the lateral direction can be 0.1 to 0.2 μm, and the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction can be 0.5 to 1.5 μm, the value of the average center line average surface roughness in the longitudinal direction (Ra(RD)) can deviate from the average center line average surface roughness in the lateral direction (Ra(TD)) by less than 30% ((|(Ra(RD)-Ra(TD))| / Ra(TD) x 100(%))), and the value of the average 10-point average surface roughness in the longitudinal direction (Rz(RD)) can deviate from the average 10-point average surface roughness in the lateral direction (Rz(TD)) by less than 30% ((|(Rz(RD)-Rz(TD))| / Rz(TD) x 100(%))).

[0138] Alternatively, in the surface roughness of the island portion in the non-effective portion, the average center line average surface roughness in the longitudinal direction, the average center line average surface roughness in the diagonal direction, and the average center line average surface roughness in the lateral direction can be 0.1 to 0.15 μm, and the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction can be 0.5 to 1.0 μm, the value of the average center line average surface roughness in the longitudinal direction (Ra(RD)) can deviate from the average center line average surface roughness in the lateral direction (Ra(TD)) by less than 15% ((|(Ra(RD)-Ra(TD))| / Ra(TD) x 100(%))), and the value of the average 10-point average surface roughness in the longitudinal direction (Rz(RD)) can deviate from the average 10-point average surface roughness in the lateral direction (Rz(TD)) by less than 15% ((|(Rz(RD)-Rz(TD))| / Rz(TD) x 100(%))).

[0139] In the isolation regions IA1 and IA2 located between the adjacent effective portions AA1, AA2, and AA3, the average center line average surface roughness in the longitudinal direction, the average center line average surface roughness in the diagonal direction, and the average center line average surface roughness in the lateral direction can be 0.1 µm to 0.3 µm, and in the non-effective portion, the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction can be 0.5 µm to 2.0 µm.

[0140] Figure 6a , Figure 6b and Figure 7 are views and photographs showing plan views of the effective portions of the deposition mask. Figure 6a , Figure 6b and Figure 7 are plan views or photographs of the effective portion of any one of the first effective portion AA1, the second effective portion AA2, and the third effective portion AA3. Figure 6a , Figure 6b and Figure 7 are views for describing the shape of the through holes and the arrangement between the through holes, and of course, the deposition mask according to the embodiments is not limited to the number of through holes in the drawings.

[0141] Referring to Figure 6a and Figure 6b , the deposition mask 100 can include a plurality of through holes. The plurality of through holes can have a circular shape. Accordingly, the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of the through holes can correspond to each other.

[0142] Alternatively, referring to Figure 7The through-holes can have an elliptical shape. Accordingly, the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of the through-holes can be different from each other. For example, the diameter Cx in the horizontal direction of the through-holes can be greater than the diameter Cy in the vertical direction. However, embodiments are not limited thereto, and of course, the through-holes can have a rectangular shape, an octagonal shape, or a circular octagonal shape. As an example, in the case of measuring the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of a reference hole that is any one of the through-holes, the deviation between the diameters Cx in the horizontal direction and the deviation between the diameters Cy in the vertical direction of each hole adjacent to the reference hole can be implemented to be 2% to 10%. That is, when the dimensional deviation between the adjacent holes of one reference hole is implemented to be 2% to 10%, the deposition uniformity can be ensured. The dimensional deviation between the reference hole and the adjacent hole can be 4% to 9%. For example, the dimensional deviation between the reference hole and the adjacent hole can be 5% to 7%. For example, the dimensional deviation between the reference hole and the adjacent hole can be 2% to 5%. When the dimensional deviation between the reference hole and the adjacent hole is less than 2%, the occurrence rate of moire in the OLED panel after deposition can increase. When the dimensional deviation between the reference hole and the adjacent hole is greater than 10%, the occurrence rate of color non-uniformity in the OLED panel after deposition can increase. The average deviation of the diameter of the through-holes can be ±5 µm. For example, the average deviation of the diameter of the through-holes can be ±3 µm. For example, the average deviation of the diameter of the through-holes can be ±1 µm. In embodiments, the deposition efficiency can be improved by implementing the dimensional deviation between the reference hole and the adjacent hole to be within ±3 µm.

[0143] The through-holes can be arranged in rows or can be arranged to cross each other according to directions. Referring to Figure 6a and Figure 6b The through-holes can be arranged in rows along a vertical axis and can be arranged in rows along a horizontal axis.

[0144] The first through-holes TH1 and the second through-holes TH2 can be arranged in rows along a horizontal axis. Also, the third through-holes TH1 and the fourth through-holes TH4 can be arranged in rows along a horizontal axis.

[0145] The first through-holes TH1 and the third through-holes TH3 can be arranged in rows along a vertical axis. Also, the second through-holes TH2 and the fourth through-holes TH4 can be arranged in rows along a vertical axis.

[0146] When the through-holes are arranged in rows along the vertical axis and the horizontal axis, the island-shaped portion is placed between two through-holes adjacent to each other in a diagonal direction in which the vertical axis and the horizontal axis intersect. That is, the island-shaped portion can be located between two adjacent through-holes positioned with respect to each other in the diagonal direction.

[0147] The island-shaped portion IS can be disposed between the first through-hole TH1 and the fourth through-hole TH4. Also, the island-shaped portion IS can be disposed between the second through-hole TH2 and the third through-hole TH3. The island-shaped portion IS can be disposed in a direction of an inclination angle of about +45 degrees and a direction of an inclination angle of about -45 degrees with respect to a horizontal axis that crosses two adjacent through-holes, respectively. Here, the direction of the inclination angle of about ±45 degrees can mean a diagonal direction between the horizontal axis and the vertical axis, and the diagonal inclination angle is measured on the same plane as the horizontal axis and the vertical axis.

[0148] Referring to Figure 7 , the through-holes are disposed in a row in any one of the vertical axis or the horizontal axis, and can be disposed in a crossing manner with each other in one axis.

[0149] The first through-hole TH1 and the second through-hole TH2 can be disposed in a row in the horizontal axis. The third through-hole TH1 and the fourth through-hole TH4 can be disposed to pass through the first through-hole TH1 and the second through-hole TH2, respectively, in the vertical axis.

[0150] When the through-holes are disposed in a row in any one of the vertical axis and the horizontal axis and pass through the other direction, the island-shaped portion can be positioned between two adjacent through-holes in the other direction of the vertical axis and the horizontal axis. Alternatively, the island-shaped portion can be positioned between three through-holes adjacent to each other. Two of the three adjacent through-holes are the through-holes disposed in a row, and the remaining one through-hole can refer to a through-hole that can be disposed between two through-holes at adjacent positions in a region in a direction corresponding to the direction of the row. The island-shaped portion IS can be disposed between the first through-hole TH1, the second through-hole TH2, and the third through-hole TH3. Alternatively, the island-shaped portion IS can be disposed between the second through-hole TH2, the third through-hole TH3, and the fourth through-hole TH4.

[0151] Figure 6a , Figure 6b and Figure 7 The island-shaped portion IS can refer to an un-etched surface between the through-holes in the other surface of the large surface hole of the formed active portion AA of the deposition mask. In detail, the island-shaped portion IS can be the un-etched other surface of the deposition mask except for the second etched surface ES2 and the through-holes TH in the large surface hole in the active portion AA of the deposition mask. The deposition mask of the embodiment can be used to deposit an OLED pixel having a high resolution to a super-high resolution of 500 PPI to 800 PPI or more.

[0152] For example, the deposition mask of the embodiment can be used to form a high-resolution deposition pattern of Quad High Definition (QHD) having a resolution of 500 PPI or more. For example, the deposition mask of the embodiment can be used to deposit an OLED pixel having a pixel number of 2560*1440 or more in a horizontal direction and a vertical direction and a resolution of 530 PPI or more. According to the deposition mask of the embodiment, the number of pixels per inch can be 530 PPI or more based on a 5.5-inch OLED panel. That is, one effective portion included in the deposition mask of the embodiment can be used to form a pixel number having a resolution of 2560*1440 or more.

[0153] For example, the deposition mask of the embodiment can be used to form a high-resolution deposition pattern of Ultra High Definition (UHD) having a resolution of 700 PPI or more. For example, the deposition mask of the embodiment can be used to form a deposition pattern having a resolution of the UHD level to be used for depositing an OLED pixel having a pixel number of 3840*2160 or more in a horizontal direction and a vertical direction and a resolution of 794 PPI (800 PPI level) or more.

[0154] The diameter of one through-hole can be the width between the communication portions CA. In detail, the diameter of one through-hole can be measured at a point where the end of the inner side surface in the small surface hole intersects with the end of the inner side surface in the large surface hole. The measurement direction of the diameter of the through-hole can be any one of a horizontal direction, a vertical direction, and a diagonal direction. The diameter of the through-hole measured in the horizontal direction can be 33 µm or less. Alternatively, the diameter of the through-hole measured in the horizontal direction can be 33 µm or less. Alternatively, the diameter of the through-hole can be an average of values measured in the horizontal direction, the vertical direction, and the diagonal direction, respectively.

[0155] Accordingly, the deposition mask according to the embodiment can implement a resolution of the QHD level.

[0156] For example, the diameter of the through-hole in the horizontal direction can be 20 µm or less. Accordingly, the deposition mask according to the embodiment can implement a resolution of the UHD level.

[0157] For example, the diameter of the through-hole can be 15 µm to 33 µm. For example, the diameter of the through-hole can be 19 µm to 33 µm. For example, the diameter of the through-hole can be 20 µm to 17 µm. When the diameter of the through-hole exceeds 33 µm, it can be difficult to implement a resolution of 500 PPI or more. On the other hand, when the diameter of the through-hole is less than 15 µm, deposition malfunctions can occur.

[0158] The diameter of the through hole can be measured based on the green (G) pattern. This is because, since the G pattern among the R, G, and B patterns has a low recognition rate in vision, a larger number than the R and B patterns is required, and the interval between the through holes can be narrower than the R and B patterns.

[0159] The measurement direction of the diameter of the through hole and the measurement direction of the interval between two through holes can be the same. The interval of the through hole can be a value measured for the interval between two adjacent through holes in a horizontal direction or a vertical direction.

[0160] Referring to Figure 6a and Figure 6b , the interval between two adjacent through holes among the plurality of through holes in the horizontal direction can be 48 µm or less. For example, the interval between two adjacent through holes among the plurality of through holes in the horizontal direction can be 20 µm to 48 µm. For example, the interval between two adjacent through holes among the plurality of through holes in the horizontal direction can be 30 µm to 35 µm.

[0161] Here, the interval can refer to an interval P1 between the center of the first through hole TH1 and the center of the second through hole TH2 adjacent in the horizontal direction.

[0162] Alternatively, here, the interval can refer to an interval P2 between the center of the first island-shaped portion and the center of the second island-shaped portion adjacent in the horizontal direction. Here, the center of the island-shaped portion can be a center of another unetched surface between four adjacent through holes in the horizontal direction and the vertical direction. For example, based on the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction, the center of the island-shaped portion can refer to a point at which a horizontal axis and a vertical axis connecting edges of one island-shaped portion IS positioned in an area between a third through hole TH3 vertically adjacent to the first through hole TH1 and a fourth through hole TH4 vertically adjacent to the second through hole TH2 intersect.

[0163] Alternatively, the interval can refer to an interval P2 between the center of the first island-shaped portion among three adjacent through holes in the horizontal direction and the center of the second island-shaped portion adjacent to the first island-shaped portion.

[0164] Referring to Figure 7 , the interval can refer to an interval P2 between the center of the first island-shaped portion and the center of the second island-shaped portion adjacent in the horizontal direction. Here, the center of the island-shaped portion can be a center of another unetched surface between one through hole and two adjacent through holes in the vertical direction. Alternatively, here, the center of the island-shaped portion can be a center at another unetched surface between two through holes and one through hole adjacent in the vertical direction. That is, the center of the island-shaped portion is a center of an unetched surface between three adjacent through holes, and the three adjacent through holes can refer to a triangle that can be formed when the centers are connected.

[0165] For example, the center of the island-shaped portion can be a center at another surface, which is not etched, between the third through-hole TH3 and the first through-hole TH1 and the second through-hole TH2, wherein the third through-hole TH3 is positioned at least partially or entirely in a region between a vertical direction of each of the first through-hole TH1 and the second through-hole TH2, which are adjacent to each other in a horizontal direction.

[0166] In the deposition mask according to the embodiment, the diameter of the through-hole is 33 μm or less, and the pitch between the through-holes is 48 μm or less, and thus an OLED pixel of a resolution of 500 PPI or more can be deposited. That is, a QHD level resolution can be implemented using the deposition mask according to the embodiment.

[0167] The diameter of the through-hole and the pitch between the through-holes can be a size for forming a green sub-pixel. The deposition mask can be an OLED deposition mask for realizing quad high display pixels.

[0168] For example, the deposition mask can be used to deposit at least one sub-pixel of red R, first green G1, blue B, and second green G2. In detail, the deposition mask can be used to deposit a red R sub-pixel. Alternatively, the deposition mask can be used to deposit a blue B sub-pixel. Alternatively, the deposition mask can be used to form a first green G1 sub-pixel and a second green G2 sub-pixel at the same time.

[0169] The pixel arrangement of the organic light emitting display device can be disposed in the order of "red R - first green G1 - blue B - second green G2". In this case, the red R - first green G1 can form one pixel RG, and the blue B - second green G2 can form another pixel BG. In the organic light emitting display device having this arrangement, since the deposition interval of the green light emitting organic material is narrower than the deposition interval of the red light emitting organic material and the blue light emitting organic material, a form of the deposition mask like the present disclosure can be required.

[0170] In the deposition mask according to the embodiment, the diameter of the through-hole is 20 μm or less, and the pitch between the through-holes is 32 μm or less, and thus an OLED pixel of a resolution of 800 PPI level or more can be deposited. That is, a UHD level resolution can be implemented using the deposition mask according to the embodiment.

[0171] The diameter of the through-hole and the pitch between the through-holes can be a size for forming a green sub-pixel. The deposition mask can be an OLED deposition mask for realizing ultra high display pixels.

[0172] Referring to Figure 6a , respectively, a description is made of Figure 6b andFigure 7 a cross section along the A-A' direction and a cross section along the B-B' direction.

[0173] Figure 6a are views showing respective cross sections, the respective cross sections being overlapped for describing Figure 6b and Figure 8 a height difference and a size between the cross section along the A-A' direction and the cross section along the B-B' direction.

[0174] First, a cross section along the A-A' direction of Figure 6a and Figure 6b will be described. The A-A' direction is a cross section intersecting a central region between the first through hole TH1 and the third through hole TH3 adjacent in the vertical direction. That is, the cross section along the A-A' direction can not include a through hole.

[0175] An etching surface ES2 in the large surface hole and an island-shaped portion IS which is another surface of the deposition mask not etched, and the etching surface ES2 in the large surface hole can be positioned in the cross section along the A-A' direction. Accordingly, the island-shaped portion IS can include a surface parallel to one unetched surface of the deposition mask. Alternatively, the island-shaped portion IS can include a surface identical to or parallel to another unetched surface of the deposition mask.

[0176] Next, a cross section along the B-B' direction of Figure 6c and Figure 4 will be described. The B-B' direction is a cross section intersecting a center of each of the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction. That is, the cross section along the direction B-B' can include a plurality of through holes.

[0177] One rib can be positioned between the third through hole TH3 and the fourth through hole TH4 adjacent in the direction B-B'. Another rib can be positioned between the fourth through hole TH4 and a fifth through hole adjacent to the fourth through hole in the horizontal direction but positioned in a direction opposite to the third through hole TH3. One through hole can be positioned between the one rib and the other rib. That is, one through hole can be positioned between two ribs adjacent in the horizontal direction.

[0178] In the cross section along the B-B' direction, a rib RB which is a region in which the etching surface ES2 in the large surface hole and the etching surface ES2 in an adjacent large surface hole are connected to each other can be positioned. Here, the rib RB can be a region in which boundaries of two adjacent large surface holes are connected. Since the rib RB is an etching surface, the rib RB can have a smaller thickness than the island-shaped portion IS.

[0179] For example, the island-shaped portion can have a width of 2 μm or more. That is, the width in a direction parallel to another surface on which a portion remains unetched can be 2 μm or less. When the width of one end portion and the width of the other end portion of one island-shaped portion are 2 μm or more, the total volume of the deposition mask can be increased. The deposition mask having such a structure ensures sufficient rigidity against a pulling force applied to an organic material deposition process or the like, and thus is advantageous for maintaining the uniformity of the through hole.

[0180] Referring to Figure 6a will be described Figure 6b and Figures 9 to 13 B-B' cross sections and enlarged cross sections of the ribs RB located in the effective area and the through hole between the ribs according to Figure 9 In the deposition mask of this embodiment, the thickness of the effective portion AA in which the through hole is formed by etching can be different from the thickness of the unetched non-effective portion UA. In detail, the thickness of the rib RB can be smaller than the thickness in the unetched non-effective portion UA.

[0181] In the deposition mask of this embodiment, the thickness of the non-effective portion can be greater than the thickness of the effective portion. For example, in the deposition mask of this embodiment, the maximum thickness of the non-effective portion or the non-deposition area can be 30 μm or less. For example, in the deposition mask of this embodiment, the maximum thickness of the non-effective portion or the non-deposition area can be 25 μm or less. For example, in the deposition mask of this embodiment, the maximum thickness of the non-effective portion or the non-deposition area can be 15 μm to 25 μm. When the maximum thickness of the non-effective portion or the non-deposition area of the deposition mask according to this embodiment is greater than 30 μm, it can be difficult to form a through hole having a fine size because the thickness of the metal plate material is thick. When the maximum thickness of the non-effective portion or the non-deposition area of the deposition mask according to this embodiment is less than 15 μm, it can be difficult to form a through hole having a uniform size because the thickness of the metal plate material is thin.

[0182] The maximum thickness T3 measured at the center of the rib RB can be 15 μm or less. For example, the maximum thickness T3 measured at the center of the rib RB can be 7 μm to 10 μm. For example, the maximum thickness T3 measured at the center of the rib RB can be 6 μm to 9 μm. When the maximum thickness T3 measured at the center of the rib RB is greater than 15 μm, it can be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or more. When the maximum thickness T3 measured at the center of the rib RB is less than 6 μm, it can be difficult to uniformly form a deposition pattern.

[0183] The height H1 of the small surface hole of the deposition mask can be 0.2 to 0.4 times the maximum thickness T3 measured at the center of the rib RB. For example, the maximum thickness T3 measured at the center of the rib RB can be 7 to 9 pm, and the height H1 between one surface of the deposition mask and the communicating portion can be 1.4 to 3 pm. The height H1 of the small surface hole of the deposition mask can be 3.5 pm or less. For example, the height of the small surface hole can be 0.1 to 3.2 pm. For example, the height of the small surface hole of the deposition mask can be 0.5 to 3.5 pm. For example, the height of the small surface hole of the deposition mask can be 2 to 3.2 pm. Here, the height can be measured in the thickness measurement direction of the deposition mask, that is, in the depth direction, and the height can be the height measured from one surface of the deposition mask to the communicating portion. In detail, the height can be measured in the z-axis direction that forms 90 degrees with the above horizontal direction (x-direction) and the vertical direction (y-direction) in the plane of Figure 10 , Figure 11 or Figure 12 is measured.

[0184] When the height between one surface of the deposition mask and the communicating portion is greater than 3.5 pm, deposition failure can occur due to the following shadow effect in which the deposition material diffuses to an area larger than the area of the through hole during OLED deposition.

[0185] The aperture W1 at one surface of the deposition mask at which the small surface hole V1 is formed and the aperture W2 at the communicating portion that is the boundary between the small surface hole V1 and the large surface hole V2 can be similar to or different from each other. The aperture W1 at one surface of the deposition mask at which the small surface hole V1 is formed can be greater than the aperture W2 at the communicating portion.

[0186] For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the communicating portion can be 0.01 to 1.1 pm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the communicating portion can be 0.03 to 1.1 pm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the communicating portion can be 0.05 to 1.1 pm.

[0187] When the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the communicating portion is greater than 1.1 pm, deposition failure can occur due to the shadow effect.

[0188] The inclination angle of the small surface hole measured on one surface of the deposition mask can be 89 degrees or less. The inclination angle of the small surface hole can refer to that which is measured at the rib RB. The inclination angle of one end E1 of the small surface hole to one end E2 of the communication portion located between the small surface hole and the large surface hole with respect to one surface of the deposition mask can be 89 degrees or less. For example, the inclination angle of one end E1 of the small surface hole to one end E2 of the communication portion located between the small surface hole and the large surface hole with respect to one surface of the deposition mask can be 75 degrees to 89 degrees. For example, the inclination angle of one end E1 of the small surface hole to one end E2 of the communication portion located between the small surface hole and the large surface hole with respect to one surface of the deposition mask can be 78 degrees to 89 degrees. For example, the inclination angle of one end E1 of the small surface hole to one end E2 of the communication portion located between the small surface hole and the large surface hole with respect to one surface of the deposition mask can be 85 degrees to 89 degrees.

[0189] In other words, the inclination angle can be defined as follows. The inclination angle of the large surface hole can be an internal angle between a virtual first straight line corresponding to the other flat surface of the deposition mask and a virtual second straight line connecting one end of the large surface hole and one end of the communication portion. In addition, the inclination angle of the small surface hole can be an internal angle between a virtual third straight line corresponding to the other flat surface of the deposition mask and a virtual fourth straight line connecting one end of the small surface hole and one end of the communication portion.

[0190] Here, the small surface hole V1 can be formed on one surface of the deposition mask, and the large surface hole V2 can be formed on the other surface of the deposition mask. In addition, one surface of the deposition mask serves as a reference for measuring the inclination angle of the small surface hole, and the other surface of the deposition mask serves as a reference for measuring the inclination angle of the large surface hole.

[0191] When the inclination angle connecting one end E1 of the small surface hole located on one surface of the deposition mask and one end E2 of the communication portion located between the small surface hole and the large surface hole exceeds 89 degrees, the shadow effect can be prevented, but the problem that the organic material remains in the through hole during deposition can occur. Accordingly, it can be difficult to form a deposition pattern having a uniform size.

[0192] When the inclination angle connecting one end E1 of the small surface hole located on one surface of the deposition mask and one end E2 of the communication portion located between the small surface hole and the large surface hole is less than 70 degrees, deposition failure can occur due to the shadow effect.

[0193] The inclination angle of the large surface hole V2 can be 55 degrees or less. The inclination angle of the large surface hole can mean that the inclination angle is measured at the rib RB. The inclination angle of one end E3 of the large surface hole V2 connected to one end E2 of the communication portion between the small surface hole and the large surface hole with respect to the other surface opposite to the one surface of the deposition mask can be 40 to 55 degrees. Accordingly, a deposition pattern having a high resolution of 500 PPI or more can be formed, and at the same time, island portions can exist on the other surface of the deposition mask.

[0194] The inclination angle of one end E3 of the large surface hole V2 connected to one end E2 of the communication portion between the small surface hole and the large surface hole with respect to the other surface opposite to the one surface of the deposition mask can be 45 to 55 degrees. Accordingly, a deposition pattern having a high resolution of 800 PPI or more can be formed, and at the same time, island portions can exist on the other surface of the deposition mask.

[0195] Referring to Figure 13 A step of processing a metal plate for manufacturing a deposition mask according to an embodiment will be described.

[0196] Referring to Figure 12 A rolled metal plate will be described. The thickness of the metal plate for manufacturing a deposition mask can be reduced by passing between a plurality of rollers disposed above and below. For example, the metal plate of the present embodiment can be thinner than the metal plate before being rolled by cold rolling.

[0197] Referring to Figure 13 Cutting of the rolled metal plate will be described. For storage convenience, the metal plate for manufacturing a deposition mask can be rolled up. At this time, the direction in which the metal plate is rolled or the rolling direction can be denoted as RD, and the direction perpendicular to the rolling direction (the direction in which it is rolled) can be denoted as TD. The rolling direction of the metal plate is the same as the longitudinal direction of the metal plate. The rolled metal plate can be cut into a length suitable for manufacturing a deposition mask.

[0198] Referring to Figure 14 The shape of the grains on the surface of the rolled metal plate will be described. On the rolled metal plate, the grains can be stretched in the rolling direction RD. Accordingly, the metal plate can include a striated texture in the rolling direction. In detail, the surface of the rolled metal plate can be formed with a striated irregular portion along the rolling direction. That is, in the rolled metal plate, the component of the rolling texture is visualized on the surface. Here, the texture can mean a selective arrangement state of the grains. For example, the surface of the rolled metal plate can include a texture component having a repetitive striated shape.

[0199] Here, the size of the grains can be non-uniform according to the direction. That is, the grain boundaries positioned on the surface of the rolled metal plate can have anisotropy.

[0200] For example, the length r1 of the grains in the rolling direction RD can be greater than the length r2 of the grains in the direction TD perpendicular to the rolling direction. For example, the length r1 of the grains in the rolling direction RD: the length r2 of the grains in the transverse direction TD perpendicular to the rolling direction can be 50: 1 to 150: 1. The specific grain size can vary depending on the recrystallization temperature, the thickness of the metal plate, and the rolling process.

[0201] When forming a via hole on the rolled metal plate, the deviation of the grain size is greatly different between the rolling direction RD and the transverse direction TD, and thus there is a problem in that the via hole diameter can be different according to the direction. That is, there can be a problem in that it is difficult to uniformly etch in the rolling direction RD and the transverse direction TD due to the anisotropy of the grains.

[0202] The rolled metal plate can have an average center line average surface roughness Ra and an average 10-point average surface roughness Rz in the rolling direction RD that are less than the values of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the transverse direction TD. That is, the surface roughness can be different according to whether the rolled metal plate is in the rolling direction RD or in the transverse direction TD. Here, the average center line average surface roughness Ra and the average 10-point average surface roughness Rz can be used as a method of measuring the surface roughness. For example, since the cold-rolled stainless metal plate has an average center line average surface roughness Ra and an average 10-point average surface roughness Rz in the rolling direction RD that are less than the values of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the transverse direction TD, the adhesion of the photoresist layer can be different according to the direction. Therefore, when forming a via hole by depositing a patterned photoresist layer on the rolled metal plate, it can be difficult to form a via hole having a uniform hole diameter. In addition, due to the difference in the adhesion of the photoresist layer according to the direction, delamination of the photoresist layer can occur, and thus it can be difficult to manufacture a deposition mask including an island-shaped portion having a uniform area.

[0203] The shape of the grains due to surface treatment of the surface of the rolled metal plate can change. The rolled metal plate can be surface-treated by etching to reduce the thickness and reduce the anisotropy of the grains.

[0204] The surface of the surface-treated metal plate after rolling can include protrusions having various shapes, for example, a circular shape, an elliptical shape, a rectangular shape, and a random shape. Among the plurality of protrusions on the surface of the surface-treated metal plate after rolling, the length r1 of the grains in the rolling direction RD can be the same as or different from the length r2 of the grains in the transverse direction TD.

[0205] In the case where a via hole is formed using the surface-processed metal plate after rolling in the present embodiment, since the size of the crystal grains in the rolling direction RD and the size of the crystal grains in the transverse direction TD are similar to each other, the diameter of the via hole can be formed uniformly regardless of the direction. That is, in order to solve the etching unevenness according to the anisotropy of the crystal grains, in the present embodiment, the via hole is formed by using a metal plate whose surface is surface-processed, thereby improving the consistency of the shape and diameter of the via hole and the consistency of the area of the island-shaped portion.

[0206] The surface-processed metal plate after rolling in the present embodiment can have values in the following ranges: the average center line average surface roughness Ra in the rolling direction RD and the average center line average surface roughness Ra in the transverse direction TD correspond to each other.

[0207] The surface-processed metal plate after rolling in the present embodiment can have values in the following ranges: the average 10-point average surface roughness Rz in the rolling direction RD and the average 10-point average surface roughness Rz in the transverse direction TD correspond to each other. That is, in the rolled metal plate, the range of the surface roughness can be the same or similar regardless of the rolling direction RD, the transverse direction TD, or the diagonal direction.

[0208] For example, although the cold-rolled stainless metal plate has values of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the rolling direction RD that are smaller than the average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the transverse direction TD before the surface treatment, the stainless metal plate can have values of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the predetermined range regardless of the direction after the surface treatment by etching. Therefore, in the surface-processed metal plate after rolling, the adhesion of the photoresist layer can be uniform regardless of the direction. Therefore, when a via hole is formed by depositing a patterned photoresist layer on the metal plate after rolling and surface treatment by etching, a via hole having a uniform hole diameter can be formed at a high yield. In addition, since the adhesion of the photoresist layer can be uniform regardless of the direction, peeling of the photoresist layer can be prevented, so that a deposition mask having an island-shaped portion with a uniform area can be manufactured. Therefore, the deposition mask manufactured using the metal plate of the present embodiment can form a fine and uniform via hole at a high yield.

[0209] In the metal plate, the average center line average surface roughness in the rolling direction RD, the average center line average surface roughness in the transverse direction TD, and the average center line average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be 0.1 μm to 0.3 μm, respectively.

[0210] For example, in the metal sheet, the average center line average surface roughness in the rolling direction RD, the average center line average surface roughness in the transverse direction TD, and the average center line average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be 0.1 μm to 0.2 μm, respectively.

[0211] For example, in the metal sheet, the average center line average surface roughness in the rolling direction RD, the average center line average surface roughness in the transverse direction TD, and the average center line average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be 0.1 μm to 0.15 μm, respectively.

[0212] In the metal sheet, the average 10-point average surface roughness in the rolling direction RD, the average 10-point average surface roughness in the transverse direction TD, and the average 10-point average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be 0.5 μm to 2.0 μm, respectively.

[0213] For example, in the metal sheet, the average 10-point average surface roughness in the rolling direction RD, the average 10-point average surface roughness in the transverse direction TD, and the average 10-point average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be 0.5 μm to 1.5 μm, respectively.

[0214] For example, in the metal sheet, the average 10-point average surface roughness in the rolling direction RD, the average 10-point average surface roughness in the transverse direction TD, and the average 10-point average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be 0.5 μm to 1.0 μm, respectively.

[0215] Figure 15 and Figure 16 is an SEM photograph of a metal sheet having a predetermined thickness after rolling and annealing.

[0216] Figure 15 is an SEM photograph of a first test piece of invar that has been rolled and annealed, magnified by 5,000 times.

[0217] Figure 16 is an SEM photograph of a second test piece of invar that has been rolled and annealed, magnified by 5,000 times.

[0218] The surface roughness of the rolled and annealed invar steel before the surface treatment can have the following values. In the first test piece and the second test piece, the center line average surface roughness measured over the entire area having the first horizontal length and the second vertical length (average center line average surface roughness Ra in the entire area) can be 0.06 μm to 0.1 μm. In the first test piece and the second test piece, the 10-point average surface roughness measured over the entire area having the first horizontal length and the second vertical length (average 10-point average surface roughness Rz in the entire area) can be 0.8 μm to 1.5 μm.

[0219] Next, the following steps will be described: preparing a test piece of the metal plate BM that has been rolled and annealed as shown in FIGS. 1A and 1B, then etching the test piece and processing the test piece into a test piece as shown in FIGS. 2A and 2B. Figure 15 Figure 11 Figure 16

[0220] The predetermined thickness T0 of the rolled and annealed metal plate BM can be 30 μm or more. For example, the predetermined thickness T0 of the rolled and annealed metal plate BM can be 25 μm or more.

[0221] One side and / or both sides of the metal plate can be etched to produce a metal plate having a thickness T1 that is thinner than the predetermined thickness T0. After being rolled and annealed, the thickness of the metal plate that has undergone the etching step can be a thickness T1 of 20 μm to 30 μm. A rolled and annealed metal plate having a predetermined thickness of 30 μm or more can have a thickness T1 of 20 μm to 30 μm through the etching step of the surface of the metal plate.

[0222] A rolled and annealed metal plate having a predetermined thickness T0 of 25 μm or more can have a thickness T1 of 15 μm to 25 μm through the etching step. Here, the etching can include electro-etching or chemical etching.

[0223] The thickness T1 of the metal plate after the etching step can be 60% to 90% of the predetermined thickness T0 of the metal plate. Preferably, the thickness T1 of the metal plate after the etching step can be 70% to 80% of the predetermined thickness T0 of the metal plate.

[0224] Figure 12 Figure 14 are SEM photos of the non-deposition area of the deposition mask according to the embodiments.

[0225] Figure 17 are SEM photos of the first test piece of Figure 14 , where the deviation of the surface roughness is improved after the surface treatment of etching the rolled and annealed invar steel, the SEM photos are magnified by 5,000 times.​​​​Figure 14 is Figure 17 a SEM photograph of a second test piece, in which the deviation of the surface roughness is improved after surface treatment by etching the rolled and annealed invar, which is magnified by 5,000 times.

[0226] The surface roughness of the etched invar after rolling and annealing can have the following values. In the first test piece, the center line average surface roughness measured over the entire area having the first horizontal length and the second vertical length (average center line average surface roughness in the entire area) can be 0.14 μm to 0.15 μm. In the second test piece, the center line average surface roughness measured over the entire area having the first horizontal length and the second vertical length (average center line average surface roughness in the entire area) can be 0.14 μm to 0.15 μm.

[0227] In the first test piece, the 10-point average surface roughness measured over the entire area having the first horizontal length and the second vertical length (10-point average surface roughness in the entire area) can be 3.8 μm to 4.5 μm.

[0228] In the second test piece, the 10-point average surface roughness measured over the entire area having the first horizontal length and the second vertical length (10-point average surface roughness in the entire area) can be 3.8 μm to 4.5 μm.

[0229] Referring to Figure 15 and Figure 16 , a manufacturing process of a deposition mask according to an embodiment will be described.

[0230] In a method of producing a metal material deposition mask for OLED pixel deposition, the deposition mask can be manufactured by the following steps: a first step of preparing a metal plate for rolling and annealing and having a predetermined thickness, in which the average center line average surface roughness and the average 10-point average surface roughness in a rolling direction are less than the average center line average surface roughness and the average 10-point average surface roughness in a transverse direction; a second step of etching the metal plate into a metal plate thinner than the predetermined thickness such that the average center line average surface roughness in the rolling direction and the average center line average surface roughness in the transverse direction are in the range of 0.1 μm to 0.3 μm, respectively, and the average 10-point average surface roughness in the rolling direction and the average 10-point average surface roughness in the transverse direction are in the range of 0.5 μm to 2.0 μm, respectively; and a third step of forming a plurality of large surface holes, a plurality of small surface holes, and a plurality of through holes formed by the large surface holes and the small surface holes by coating a patterned photoresist layer on a surface of the metal plate and developing the patterned photoresist layer and etching the metal plate.

[0231] First, a first step of preparing a metal plate BM for rolling and annealing and having a predetermined thickness T0 will be described with reference to FIG. 1. Figure 15 The first step of preparing a metal plate BM for rolling and annealing and having a predetermined thickness T0 will be described with reference to FIG. 1.

[0232] Here, the rolling can include cold rolling. The annealing can include continuous annealing.

[0233] The base metal plate BM can include a metal material. The base metal plate BM can include a nickel alloy. For example, the base metal plate BM can be an alloy of nickel and iron. At this time, the nickel can be about 35 to 37% by weight, and the iron can be about 63 to 65% by weight. For example, the base metal plate BM can include hastelloy including about 35 to 37% by weight of nickel, about 63 to 65% by weight of iron, and trace amounts of at least one of C, Si, S, P, Cr, Mo, Mn, Ti, Co, Cu, Fe, Ag, Nb, V, In, and Sb. Here, a small amount can mean not more than 1% by weight. Specifically, here, a trace amount can mean 0.5% by weight or less. However, the base metal plate BM is not limited thereto, and can obviously include various metal materials.

[0234] Since a nickel alloy such as hastelloy has a small coefficient of thermal expansion, it has an advantage that the life of a deposition mask can be increased.

[0235] In the metal plate prepared in the first step, the average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the rolling direction RD are smaller than the average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the transverse direction TD.

[0236] Next, a second step of etching the metal plate to be thinner than the predetermined thickness will be described with reference to FIG. 2. Figure 16 The second step of etching the metal plate to be thinner than the predetermined thickness will be described with reference to FIG. 2.

[0237] One side and / or both sides of the metal plate can be etched to produce a metal plate having a thickness T1 thinner than the predetermined thickness T0. That is, the second step can include a step of isotropically etching the rolled and annealed metal plate.

[0238] The metal plate having undergone the second step can include a step of etching the metal plate to be thinner than the predetermined thickness such that the average center line average surface roughness Ra in the rolling direction RD and the average center line average surface roughness Ra in the transverse direction TD are in the range of 0.1 to 0.3 μm, respectively, and the average 10-point average surface roughness Rz in the rolling direction RD and the average 10-point average surface roughness Rz in the transverse direction TD are in the range of 0.5 to 2.0 μm, respectively. The rolling direction RD is a longitudinal direction of the deposition mask. The transverse direction TD is a lateral direction perpendicular to the longitudinal direction of the deposition mask.

[0239] Optionally, the metal plate BM can include a step of forming an etching control layer.

[0240] For example, there is a problem in that it is difficult to uniformly etch a nickel alloy such as invar. That is, in a nickel alloy such as invar, an etching rate increases in an initial stage of etching. Thus, there is a problem in that an etching factor of a small surface hole can decrease. When the etching factor of the small surface hole decreases, there can be a problem in that a deposition mask in which deposition is poorly performed due to a shadow effect is formed. Alternatively, due to side etching of a large surface hole, peeling of a photoresist layer can occur. In addition, as the size of a via hole increases, it can be difficult to form a via hole having a fine size. Furthermore, the via hole is formed non-uniformly, such that a yield of a deposition mask decreases.

[0241] Thus, in embodiments, an etching control layer for surface modification can be disposed on a surface of a base metal plate with different compositions, contents, crystal structures, and etching rates. Here, surface modification can refer to a layer made of various materials disposed on a surface to increase an etching factor.

[0242] That is, the etching control layer can be an etching barrier layer having a lower etching rate than that of the metal plate. The etching control layer can have a different crystal plane and crystal structure from those of the metal layer. For example, the crystal plane and crystal structure can be different from each other because the etching control layer includes different elements from those of the metal layer.

[0243] In the same etching environment, the etching control layer can have a different etching potential from that of the base metal plate. For example, when the same etchant is applied at the same temperature for the same time, the etching control layer can have a different etching current or etching potential from those of the base metal plate.

[0244] The metal plate BM can include the etching control layer on one surface and / or both surfaces, the entire surface and / or an effective area of the metal plate BM. The etching control layer can include different elements from those of the metal plate, or can include a larger content of a metal element having a slow etching rate than the metal plate.

[0245] For example, the etching control layer can include at least one metal of nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al), and alloys thereof, and the content of at least one metal of nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al), and alloys thereof can be greater than the content of these metals included in the base metal plate. Preferably, the etching control layer can include nickel (Ni). That is, after the second step, the third step is performed after further performing a step of forming a nickel deposition layer having a sub-micron thickness on a metal plate having a thickness thinner than a predetermined thickness.

[0246] In the case of further including such a surface treatment step, the etching control layer can be provided on the surface of the metal plate according to the embodiment. In the surface treatment step, the etching control layer of an element different from the metal plate BM is provided so that the etching rate on the surface can be lower than the etching rate of the raw material of the metal plate BM. Accordingly, the etching factor of the deposition mask according to the embodiment can be increased. In addition, since the deposition mask according to the embodiment can uniformly form a plurality of through-holes, the deposition efficiency of the R, G, and B patterns can be improved. Here, the inclusion of a different element can mean that the metal plate BM and the etching control layer include at least one different element, or even if all elements are the same, an alloy having a different content is included.

[0247] Next, a step of forming a plurality of through-holes will be described with reference to FIGS. 6A to 6C. Figure 12 A third step of forming a plurality of through-holes will be described.

[0248] A step of providing a patterned photoresist layer P1 on one surface of the metal plate will be described. The patterned photoresist layer P1 can be applied to one surface of the base metal plate and developed to form small surface holes. An etching barrier layer such as a coating layer or a film layer for preventing etching can be provided on the other surface opposite to one surface of the base metal plate.

[0249] Next, a step of forming a groove on one surface of the metal plate by semi-etching the opening part of the photoresist layer P1 will be described.

[0250] The opening part of the photoresist layer P1 can be exposed to an etchant or the like, and thus etching can occur in the opening part of one surface of the metal plate on which the photoresist layer P1 is not provided.

[0251] For example, a metal plate having a thickness T1 of 20 to 30 μm can be etched until a groove having a thickness of about 1 / 2 of the thickness of the metal plate is formed. In detail, the small surface hole can be formed by half-etching. The depth of the groove formed by the half-etching can be about 10 to 15 μm.

[0252] For example, a metal plate having a thickness T1 of 15 to 25 μm can be etched until a groove having a thickness of about 1 / 2 of the thickness of the metal plate is formed. In detail, the small surface hole can be formed by half-etching. The depth of the groove formed by the half-etching can be about 7.5 to 12.5 μm.

[0253] The step of forming a groove on one surface of the metal plate can be anisotropic etching or a semi-additive process (SAP). Accordingly, in the groove formed by the half-etching, the etching rate in the depth direction (b direction) can be greater than the etching rate of the side surface etching (a direction) compared to isotropic etching.

[0254] The etching factor of the small surface hole can be 2.0 to 3.0. For example, the etching factor of the small surface hole can be 2.1 to 3.0. For example, the etching factor of the small surface hole can be 2.2 to 3.0.

[0255] Here, the etching factor can refer to the depth B of the etched small surface hole divided by the width A of the photoresist layer protruding from the island-shaped portion on the small surface hole and toward the center of the through hole (etching factor = B / A). A can represent the average of the width of one side of the photoresist layer protruding on one surface hole and the width of the other side opposite to the one side.

[0256] Next, a step of providing a patterned photoresist layer P2 on the other surface opposite to the one surface of the metal plate will be described. The patterned photoresist layer P2 having an opening portion can be provided on the other surface opposite to the one surface of the base metal plate so as to form a large surface hole. An etching barrier layer such as a coating layer or a film layer for preventing etching can be provided on one surface of the base metal plate.

[0257] The opening portion of the photoresist layer P2 can be exposed to an etchant, and thus etching can occur in the opening portion of the other surface of the metal plate on which the photoresist layer P1 is not provided. The other surface of the metal plate can be etched by anisotropic etching or isotropic etching.

[0258] The opening portion of the photoresist layer is etched, and thus the groove on one surface of the metal plate can be connected to the large surface hole to form a through hole.

[0259] In the third step, 1) a patterned photoresist layer P1 is disposed on one surface of the metal plate, and a patterned photoresist layer P2 is disposed on the other surface of the metal plate. Then, 2) the through holes can be formed by etching both the one surface and the other surface of the metal plate at the same time.

[0260] Alternatively, in the third step, 1) a patterned photoresist layer P1 can be disposed on one surface of the metal plate, and 2) the grooves can be formed on only one surface of the metal plate by performing a half-etching on the open portion of the photoresist layer P1. Then, 3) a patterned photoresist layer P2 can be disposed on the other surface of the metal plate. Then 4) the through holes can be formed on the other surface of the metal plate by etching the open portion of the photoresist layer P2.

[0261] Alternatively, in the second step, 1) a patterned photoresist layer P2 can be disposed on the other surface of the metal plate, and 2) the large surface holes can be formed on only the other surface of the metal plate by etching the open portion of the photoresist layer P2. Then, 3) a patterned photoresist layer P1 can be disposed on one surface of the metal plate. Then 4) the through holes connected to the large surface holes can be formed on one surface of the metal plate by performing a half-etching on the open portion of the photoresist layer P1.

[0262] Next, the photoresist layer is removed, and the deposition mask can be formed by the third step of forming a plurality of large surface holes, a plurality of small surface holes, and a plurality of through holes formed by the large surface holes and the small surface holes. For example, the through holes can be formed by anisotropic etching.

[0263] The plurality of large surface holes are formed on one surface at the same time, the plurality of small surface holes are formed on the other surface opposite to the one surface at the same time, and the plurality of through holes are formed at the same time by the communication portion, the boundary between the large surface holes and the small surface holes is connected to the communication portion, and thus, the deposition mask can be manufactured.

[0264] The deposition mask can contain the same material as the metal plate. For example, the deposition mask can include a material having the same composition as the metal plate. For example, the island portion of the deposition mask can include the etching control layer described above. In detail, the surface of the island portion of the deposition mask or the non-deposition area can include a nickel deposition layer. That is, nickel can remain on the surface of the non-deposition area or the island portion of the metal plate which is not etched.

[0265] In the deposition mask, the maximum thickness at the center of the island-shaped portion can be less than the maximum thickness T1 of the non-deposition region not subjected to etching to form a semi-etching portion. For example, the maximum thickness at the center of the island-shaped portion can be less than 15㎛. For example, the maximum thickness at the center of the island-shaped portion can be less than 10㎛. However, the maximum thickness T1 in the non-deposition region of the deposition mask can be 20㎛ to 30㎛ or 15㎛ to 25㎛. The maximum thickness in the non-deposition region of the deposition mask can be equal to the thickness of the metal plate prepared in the second step. Since the surfaces of the non-effective portion and the effective portion are completely etched in the second step, the thickness of the non-effective portion can be less than the predetermined thickness measured in the first step of the metal plate.

[0266] To manufacture a deposition mask having a high resolution of UHD and QHD levels, it is necessary to use a thin metal plate. Accordingly, a deposition mask can be manufactured using a metal plate rolled to have a thin thickness. However, it has been determined that the uniformity of a via is reduced in a deposition mask manufactured by such a method. That is, the density of the via becomes higher due to the need for high resolution, and thus it is necessary to form a via having a fine and uniform size.

[0267] The inventors of the present application have determined the surface characteristics to determine the problem of the uniformity reduction of a via of a rolled metal plate, and thus determined that a rolled metal plate has different surface roughness values in a rolling direction and a transverse direction. Since the surface roughness of a rolled metal plate is a factor that determines the adhesion of a photoresist layer, it can be determined that the uniformity is reduced when a via is directly manufactured using a rolled metal plate. That is, in the case of manufacturing a deposition mask using a rolled metal plate, it can be determined that a uniform via is not formed because the etching rate in a specific direction is higher.

[0268] Accordingly, the inventors of the present application have obtained a deposition mask including a via having a uniform size and a manufacturing method thereof after performing a processing step of controlling the surface roughness of a rolled metal plate to be within a predetermined range.

[0269] When the roughness is reduced to a predetermined range or less by etching as a surface treatment, there can be a problem of a reduction in the adhesion of a photoresist layer. In addition, when a metal plate is etched to a thickness of 10㎛ to 12㎛, there is a problem that a structure is deformed due to low rigidity when a deposition mask is drawn.

[0270] Accordingly, the deposition mask according to the embodiment has a thickness of 20 to 30 μm, or 15 to 25 μm in a portion in which a half-etching portion is not formed in a non-deposition region thereof, an average center line average surface roughness in a longitudinal direction and an average center line average surface roughness in a lateral direction of the non-deposition region are 0.1 to 0.3 μm, an average 10-point average surface roughness in the longitudinal direction and an average 10-point average surface roughness in the lateral direction are 0.5 to 2.0 μm, a value of the average center line average surface roughness Ra(RD) in the longitudinal direction has a deviation of less than 50% with respect to the average center line average surface roughness Ra(TD) in the lateral direction, and a value of the average 10-point average surface roughness Rz(RD) in the longitudinal direction can have a deviation of less than 50% with respect to the average 10-point average surface roughness Rz(TD) in the lateral direction.

[0271] Thereby, it is possible to manufacture a deposition mask including fine through-holes having uniform sizes.

[0272] The deposition mask according to the embodiment can be used to deposit an OLED pixel having a high resolution of 500 PPI or more and 800 PPI or more at a high yield. In addition, it is possible to improve the consistency and accuracy of positions between the through-holes and the OLED pattern.

[0273] Hereinafter, the present application will be described in more detail with reference to examples and comparative examples. The examples are merely exemplary to describe the present application in more detail. Accordingly, the present application is not limited to the examples.

[0274] In the comparative example, a metal plate is rolled and annealed. In the example, a surface of the rolled and annealed metal plate is treated with a ferric chloride-based acidic etchant.

[0275] <Experimental Example 1: SEM Measurement Results>

[0276] Figure 13 and Figure 21 An SEM photograph of a surface of an acid-treated metal plate according to the example after rolling and annealing is shown.

[0277] Referring to Figure 18 and Figure 21 It can be seen that the stripe shape in the rolling direction disappears or is reduced on the surface of the metal plate of the example. It can be seen that the grains on the surface of the metal plate are arranged in the same or different directions. That is, it can be seen that the grains on the surface of the metal plate are arranged in random directions.

[0278] Figure 19 and Figure 22 An SEM photograph of a surface of a steel metal plate according to the comparative example after rolling and annealing is shown.

[0279] Referring to Figure 20 It can be determined that the surface of the metal plate of the comparative example has a striped grain in the rolling direction.

[0280] In this embodiment, the surface of the metal plate can be processed to have a grain independent of the direction by surface treatment. In the experimental example, only an acidic etching agent is described, but it goes without saying that an alkaline etching agent can be used.

[0281] <Experimental Example 2: Measurement Results of Ra and Rz in RD Direction, TD Direction, and Diagonal Direction>

[0282] The roughness measurement results of the example, which were measured using a roughness measuring device (NanoView, manufacturer: Nanosystem, product name: NV-E1000), are shown in Figure 23 , Table 1 and Table 2, and the roughness measurement results of the comparative example are shown in Figure 24 , Table 3 and Table 4.

[0283] The average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the example were measured in a region of the test piece having a first horizontal length and a second vertical length, and the average values measured by a plurality of lines (lines 1 to 40) in the lateral direction, the longitudinal direction, the first diagonal direction, and the second diagonal direction, respectively, are shown.

[0284] Table 1 shows individual values and average values of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz measured by ten lines of the example in the lateral direction and the longitudinal direction, respectively.

[0285] Table 2 shows individual values and average values of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz measured by ten lines of the embodiment in the first diagonal direction and the second diagonal direction, respectively.

[0286] |RD-TD| / TD*100(%) is a calculated value of the deviation ratio (%) of RD to TD.

[0287] [Table 1]

[0288]

[0289]

[0290] [Table 2]

[0291]

[0292]

[0293] The average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the comparative example were measured in a region of the test piece having a first horizontal length and a second vertical length, and show the average values measured by a plurality of lines (lines 1 to 40) in the lateral direction, the longitudinal direction, the first diagonal direction, and the second diagonal direction, respectively.

[0294] Table 3 shows the individual values and average values of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz measured by ten lines of the comparative example in the lateral direction and the longitudinal direction, respectively.

[0295] Table 4 shows the individual values and average values of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz measured by ten lines of the comparative example in the first diagonal direction and the second diagonal direction, respectively.

[0296] |RD-TD| / TD*100(%) is a calculated value of the deviation ratio (%) of RD to TD.

[0297] [Table 3]

[0298]

[0299]

[0300] [Table 4]

[0301]

[0302]

[0303] In the metal sheet according to the example, it is determined that the average center line average surface roughness Ra in the rolling direction RD and the transverse direction TD is 0.1 μm to 0.3 μm.

[0304] In the metal sheet according to the example, it is determined that the average 10-point average surface roughness Rz in the rolling direction RD and the transverse direction TD is 0.5 μm to 2.0 μm. That is, in the example, it is determined that the metal sheet has the same or similar range of roughness values for the same roughness evaluation item regardless of the direction.

[0305] In this case, the length in the first horizontal direction and the length in the second vertical direction can correspond to each other or can be different from each other.

[0306] Specifically, after the roughness measuring device is set to 20 times magnification, an arbitrary point on the metal sheet is selected, and the surface roughness can be measured in a region of 232 μm * 309 μm.

[0307] The specific method of measuring surface roughness of the example is to measure the surface roughness on an arbitrary straight line in the TD direction and the RD direction in a region having a length in the first horizontal direction and a length in the second vertical direction, and the length of the straight line can be the same as the length in the first horizontal direction or the length in the second vertical direction. The example shows the values of Ra and Rz measured at an arbitrary point of the metal test piece in the longitudinal direction, the diagonal direction, and the lateral direction after the surface treatment, and shows the average derived values obtained by measuring Ra and Rz on 10 straight lines in the TD direction, 10 straight lines in the RD direction, 10 straight lines in the 45-degree direction, and 10 straight lines in the -45-degree direction, respectively, by changing the position.

[0308] The comparative example shows the values of Ra and Rz measured at an arbitrary point of the metal test piece in the longitudinal direction, the diagonal direction, and the lateral direction before the surface treatment, and shows the average derived values obtained by measuring Ra and Rz on 10 straight lines in the TD direction, 10 straight lines in the RD direction, 10 straight lines in the 45-degree direction, and 10 straight lines in the -45-degree direction, respectively, by changing the position.

[0309] On the metal plate according to the comparative example, it was determined that the average center line average surface roughness Ra in the rolling direction RD was 0.0431 μm, and the average center line average surface roughness Ra in the transverse direction TD was 0.103 μm. In the metal plate according to the comparative example, it was determined that the average 10-point average surface roughness Rz in the rolling direction RD was 0.1862 μm, and the average 10-point average surface roughness Rz in the transverse direction TD was 0.4222 μm. That is, in the comparative example, it was determined that the average center line average surface roughness differed depending on the direction. In addition, in the comparative example, it was determined that the average 10-point average surface roughness differed depending on the direction.

[0310] In the case of the example, the total average center line average surface roughness measured in a region of 232 μm * 309 μm was 0.14 μm to 0.15 μm, and the total average 10-point average surface roughness measured in a region of 232 μm * 309 μm was 3.8 μm to 4.5 μm. On the other hand, in the comparative example, the total average center line average surface roughness measured in a region of 232 μm * 309 μm was 0.06 μm to 0.1 μm, and the total average 10-point average surface roughness measured in a region of 232 μm * 309 μm was 0.8 μm to 1.5 μm.

[0311] Therefore, when the surface roughness increases, it is considered that the adhesion is improved, but before obtaining the example, the test piece in which the total average center line average surface roughness measured in a region of 232 μm * 309 μm is 0.05 μm to 0.5 μm and the total average 10-point average surface roughness measured in a region of 232 μm * 309 μm is 1.0 μm to 3.0 μm was used to evaluate the etching shape, but the desired shape did not occur.

[0312] As a result of the cause of the inspection, the average surface roughness in the entire region of 232 μm * 309 μm increased, but an undesirable etching shape occurred due to the deviation of the surface roughness in the longitudinal direction (rolling direction) and the lateral direction (transverse direction). Based on this, the example of the present application can be obtained.

[0313] In addition, it can be seen that the value of the average center line average surface roughness Ra(RD) in the longitudinal direction of the non-deposition region or island portion of the deposition mask according to the present embodiment is less than 50% deviated from the average center line average surface roughness Ra(TD) in the lateral direction, and the value of the average 10-point average surface roughness Rz(RD) in the longitudinal direction is less than 50% deviated from the average 10-point average surface roughness Rz(TD) in the lateral direction. In detail, it can be seen that the value of the average center line average surface roughness Ra(RD) in the longitudinal direction of the non-deposition region or island portion of the deposition mask according to the present embodiment is 30% or less deviated from the average center line average surface roughness Ra(TD) in the lateral direction, and the value of the average 10-point average surface roughness Rz(RD) in the longitudinal direction is 30% or less deviated from the average 10-point average surface roughness Rz(TD) in the lateral direction. In more detail, it can be seen that the value of the average center line average surface roughness Ra(RD) in the longitudinal direction of the non-deposition region or island portion of the deposition mask according to the present embodiment is 15% or less deviated from the average center line average surface roughness Ra(TD) in the lateral direction, and the value of the average 10-point average surface roughness Rz(RD) in the longitudinal direction is 15% or less deviated from the average 10-point average surface roughness Rz(TD) in the lateral direction.

[0314] On the other hand, in the test piece of the metal plate according to the comparative example, it can be seen that the value of the average center line average surface roughness Ra(RD) in the longitudinal direction is more than 50% deviated from the average center line average surface roughness Ra(TD) in the lateral direction, and the value of the average 10-point average surface roughness Rz(RD) in the longitudinal direction is more than 50% deviated from the average 10-point average surface roughness Rz(TD) in the lateral direction.

[0315] <Experimental Example 3: Measurement of adhesion of a photoresist layer in the RD direction and the TD direction>

[0316] Figure 24 is a graph illustrating a correlation between a surface roughness according to a direction of a metal plate and adhesion of a photoresist layer according to an example. In the example, since the range of roughness at the surface of the metal plate has a constant value regardless of the direction, the adhesion of the photoresist layer can be constant.

[0317] Figure 24 is a graph illustrating a correlation between a surface roughness according to a direction of a metal plate and adhesion of a photoresist layer according to a comparative example. In the comparative example, since the roughness is different according to the direction at the surface of the metal plate, the adhesion of the photoresist layer is not uniform. Accordingly, the photoresist layer can be lifted or delaminated.

[0318] An etching surface was formed to evaluate the etching characteristics of the metal plate of the above-described example and comparative example.

[0319] <Experimental Example 4: Shape of an etching surface according to an example and a comparative example>

[0320] is a photograph illustrating the shape of an etching surface after a metal plate according to an example and a comparative example was prepared, respectively, and etching was performed for forming a large surface hole. At this time, the large surface hole can have been formed by half-etching.

[0321] Figure 25 is a photograph illustrating a half-etching shape of one surface of a metal plate to evaluate the shape of an island-shaped portion IS of a deposition mask manufactured by a method according to an example. In the deposition mask formed based on the manufacturing method of the example, the shapes of the through hole and the island-shaped portion can be uniform.

[0322] Figure 25 is a photograph illustrating a half-etching shape of one surface of a metal plate to evaluate the shape of an island-shaped portion IS of a deposition mask manufactured using a metal plate of a comparative example. In the deposition mask formed based on the manufacturing method of the comparative example, the boundary between the island-shaped portion and the through hole can not be clear. Accordingly, it can be difficult to manufacture a deposition mask having a through hole of a uniform size.

[0323] Meanwhile, a deposition mask for implementing a high-resolution pattern as described above requires a metal plate of 30 μm or less, and as the PPI value to be implemented increases, a thinner metal plate and a more precise through hole are required.

[0324] Generally, a metal plate is manufactured through a rolling process, and can have a rectangular shape including a long axis and a short axis. The metal plate can include residual stress due to the rolling process, and the residual stress included in the metal plate can increase as a force applied during rolling increases.

[0325] Due to the residual stress, a warping phenomenon (wave deformation) can occur in the metal plate, and the residual stress of the metal plate can increase as the thickness of the metal plate is thinned to achieve high resolution.

[0326] Due to the residual stress, the size and position of a via formed on the metal plate can not be uniform. Therefore, when a deposition mask is manufactured using the metal plate, deposition malfunctions can occur.

[0327] In addition, when a deposition mask is manufactured using the metal plate, alignment malfunctions can occur due to a warping phenomenon of the deposition mask. Specifically, when an organic substance is deposited, the deposition mask can be placed in a deposition apparatus. At this time, due to the warping phenomenon of the deposition mask, adhesion to a substrate can be reduced. Therefore, the organic substance can not be uniformly deposited on the substrate, and adjacent organic substances can mix with each other to cause deposition malfunctions.

[0328] To prevent such a situation, residual stress of a base metal plate, which is a base material of a metal plate, can be measured in advance. In detail, a sample metal plate can be manufactured using the base metal plate to measure residual stress, and the residual stress characteristics of the base metal plate can be grasped.

[0329] Hereinafter, a metal plate according to an embodiment and a method of measuring residual stress of the metal plate will be described.

[0330] Figure 25 is a view showing that a metal plate, which is a raw material of a deposition mask, has been wound.

[0331] Referring to Figure 25, the metal plate 10 according to the embodiment can include a metal material. For example, the metal plate 10 can include nickel (Ni). In detail, the metal plate 10 can include iron (Fe) and nickel (Ni). In further detail, the metal plate 10 can include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). In addition, the metal plate 10 can further include a small amount of at least one element among carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). Invar is an alloy including iron and nickel, and is a low thermal expansion alloy having a thermal expansion coefficient close to zero. That is, since the thermal expansion coefficient of invar is very small, invar can be used for precision parts such as a mask and a precision device. Accordingly, the deposition mask manufactured using the metal plate 10 can have improved reliability, thereby preventing deformation and increasing lifespan.

[0332] The metal plate 10 can include about 60% to about 65% by weight of iron, and can include about 35% to about 40% by weight of nickel. In detail, the metal plate 10 can include about 63.5% to about 64.5% by weight of iron, and can include about 35.5% to about 36.5% by weight of nickel. In addition, the metal plate 10 can further include about 1% or less by weight of at least one element among carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). The composition, content, and % by weight of the metal plate 10 can be determined by detecting the % by weight of each composition by selecting a specific area a*b on a plane of the metal plate 10, sampling a test piece (a*b*t) corresponding to the thickness t of the metal plate 10, and dissolving the test piece in a strong acid or the like. However, the embodiment is not limited thereto, and the content can be determined by various methods.

[0333] The metal plate 10 can be manufactured by a cold rolling method. For example, the metal plate 10 can be formed through a process of melting, forging, hot rolling, normalizing, first cold rolling, first annealing, second cold rolling, and second annealing, and can have a thickness of about 30 μm or less through the above process. Alternatively, after the above process, the thickness of the metal plate 10 can be about 30 μm or less through an additional thickness reduction process.

[0334] The metal plate 10 can be wound as shown in FIG. 1B. Figure 26 For example, the metal plate 10 can be manufactured by a cold rolling method, and the manufactured metal plate 10 can be wound using a winding roller or the like. In detail, the manufacturing method of the deposition mask 100 can be performed through a roll-to-roll process, and the metal plate 10 can be continuously supplied using the wound metal plate 10.

[0335] The metal plate 10 can have a quadrilateral shape. For example, the metal plate 10 can have a rectangular shape including a long axis and a short axis. In detail, the metal plate 10 can have a first direction as a rolling direction RD, and can have a second direction as a transverse direction TD intersecting the rolling direction. The first direction can correspond to a long axis direction of the metal plate, and the second direction can correspond to a short axis direction of the metal plate.

[0336] When the metal plate 10 is manufactured through a rolling process, a warping phenomenon can occur in the metal plate 10. In detail, the metal plate 10 can include internal stress during the rolling process, and the warping phenomenon can occur in the metal plate 10 due to the internal stress, i.e., residual stress.

[0337] The above-described residual stress can be an important factor when the metal plate 10 is used to manufacture the deposition mask 100. Therefore, it can be desirable to measure the residual stress of the metal plate 10 before the deposition mask 100 is manufactured. In detail, since the residual stress can cause a defect such as a warping phenomenon in the metal plate 10, and since the defect can occur in the manufactured deposition mask 100 due to the defect, it can be desirable to measure the residual stress of the metal plate 10 in advance.

[0338] Figure 27 is a diagram illustrating a method of measuring residual stress of a metal plate according to a comparative example. First, reference will be made to Figure 26 The comparative example will be described.

[0339] Referring to Figure 27 , a sample metal plate 15 extracted from the metal plate can be prepared to measure the residual stress of the metal plate. The sample metal plate 15 can have a long axis and a short axis, and the sample metal plate 15 can be manufactured by etching a region other than a region within a predetermined distance from both ends in the long axis direction. The etching is a half-etching of one surface of the sample metal plate 15, and the half-etching can be performed until the thickness of the one surface of the sample metal plate 15 becomes about 30% to 70% of the total thickness of the sample metal plate 15.

[0340] Subsequently, the sample metal plate 15 can be seated on a horizontal workbench to measure the residual stress. In this case, the sample metal plate 15 seated on the horizontal workbench can be seated as facing the upper surface of the horizontal workbench as in (b) of Figure 26

[0341] ​As described above, in the sample metal plate 15 disposed on the horizontal workbench, warping (wave deformation) can occur due to internal stress, and the residual stress can be calculated based on data obtained by measuring the warping. However, when the thickness of the metal plate is thin, it can be difficult to accurately measure the residual stress by the above-described method. For example, a deposition mask for implementing a high-resolution pattern of 400 PPI or more is manufactured by a metal plate having a thickness of about 30 μm or less, and the side surface of the metal plate having the thickness as described above can not be disposed parallel to the horizontal workbench. That is, when the thickness of the metal plate is thin, it can be difficult to stand the metal plate on the horizontal workbench due to its thickness, and thus it can be difficult to measure the residual stress.

[0342] In other words, conventionally, a sample metal plate is manufactured by performing half-etching on regions other than partial regions of both end portions of one surface of the sample metal plate. Subsequently, the sample metal plate is placed on a flat horizontal workbench, and the warping of the sample metal plate is measured to measure the residual stress thereof. However, in such a sample metal plate, both end portion regions in the longitudinal direction are left unetched. In addition, when the sample metal plate is placed on the flat horizontal workbench, all four corners are not etched and thus not lifted, making it difficult to measure the residual stress in the horizontal state, due to the above-described reasons.

[0343] In addition, in a metal plate for implementing a high-resolution pattern, the metal plate is difficult to stand on a horizontal workbench due to its very thin thickness. In detail, when the thickness of the metal plate is thin, the sample metal plate to be manufactured also has a thin thickness, and thus it is difficult to make the side surface of the sample metal plate stand facing the upper surface of the horizontal workbench. Accordingly, there is a problem in that it is difficult to measure the residual stress of the thin metal plate, and in a deposition mask manufactured using the metal plate, uniformity of a via to be formed and adhesion to a substrate can be reduced due to internal stress, and problems such as a reduction in deposition efficiency and deposition failure can occur.

[0344] On the contrary, in this embodiment, the residual stress can be measured regardless of the thickness of the metal plate 10.

[0345] Figure 27 FIG. 1 is a view for describing a sample metal plate manufactured using a metal plate according to an example. Example 1 FIG. 2 is a view for describing a method of measuring residual stress according to an example. Referring to Example 2 and Example 3 A residual stress characteristic and a measurement method of a metal plate according to an example will be described. Referring to Example 4 The metal plate 10 can be a metal plate for manufacturing a deposition mask 100 for implementing a high resolution of 400 PPI or more, and can have a thickness of about 30 μm or less.

[0346] The metal plate 10 can be formed by rolling a base metal plate that is a base material. The base metal plate can include a metallic material. The base metal plate can include about 60% to about 65% by weight of iron, and can include about 35% to about 40% by weight of nickel. In detail, the base metal plate can include about 63.5% to about 64.5% by weight of iron, and can include about 35.5% to about 36.5% by weight of nickel. In addition, the base metal plate can further include at least one of the following elements in an amount of about 1% by weight or less: carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). That is, the base metal plate and the metal plate 10 can include the same material.

[0347] Subsequently, a step of forming a sample metal plate 15 using the metal plate 10 can be performed. The sample metal plate 15 can be used to measure residual stress of the metal plate 10. The sample metal plate 15 can be a sample collected at an arbitrary point on the metal plate 10. In this case, the sample metal plate 15 can be at least one sample collected at an arbitrary point on the metal plate 10, and the at least one sample can be used to measure residual stress.

[0348] The step of forming the sample metal plate 15 can include a step of extracting the sample metal plate 15 from the metal plate 10 and a step of etching the sample metal plate 15.

[0349] The step of extracting the sample metal plate 15 is a step of extracting a sample metal plate in a bar shape having a width greater than a height at an arbitrary point on the metal plate 10, and the step of extracting the sample metal plate 15 can be a step of extracting a first sample metal plate extracted to have a width in a first direction and extracting a second sample metal plate extracted to have a width in a second direction. For example, the sample metal plate 15 can include a first sample metal plate extracted in a first direction that is a rolling direction RD of the metal plate 10 and a second sample metal plate extracted in a second direction that is a transverse direction TD of the metal plate 10.

[0350] The sample metal plate 15 can be a sample having a size of about 200 mm * 30 mm (width * length). In detail, a first sample metal plate can have a length of about 200 mm in a first direction and a length of 30 mm in a second direction. That is, a long axis of the first sample metal plate can extend in the rolling direction RD. In addition, a second sample metal plate can have a length of about 30 mm in the first direction and a length of about 200 mm in the second direction. That is, a long axis of the second sample metal plate can extend in the transverse direction TD.

[0351] Subsequently, a step of etching the sample metal plate 15 can be performed. In detail, the step of etching the sample metal plate 15 can be a step of performing semi-etching on one surface of the sample metal plate 15. For example, the etching step can be a step of performing semi-etching on one surface of each of the first sample metal plate and the second sample metal plate.

[0352] The step of etching the sample metal plate 15 can be a step in which a region of about 150 mm * 30 mm (width * length) that is a region of more than 50 mm is semi-etched while a region of 50 mm from one end in a long axis that is a horizontal direction of the sample metal plate 15 is left. Also, the step of etching the sample metal plate 15 can be a step of semi-etching such that the thickness of the region of 150 mm * 30 mm becomes about 30% to about 70% of the thickness of the metal plate 10.

[0353] Next, a step of measuring the residual stress of the sample metal plate can be performed. In detail, the step of measuring the residual stress can be a step of measuring the residual stress of the first sample metal plate and the second sample metal plate that are semi-etched, respectively.

[0354] Referring to Comparative Example 1 The step of measuring the residual stress of the sample metal plate 15 can include a step of disposing the sample metal plate 15 on a horizontal workbench. For example, the disposing step can be a step of arranging at least one of the first sample metal plate and the second sample metal plate 15 that are subjected to semi-etching on the horizontal workbench.

[0355] The sample metal plate 15 can include one surface and another surface. In detail, the sample metal plate 15 can include one surface on which semi-etching is performed and another surface on which semi-etching is not performed. The step of disposing the sample metal plate 15 can be a step in which the other surface of the sample metal plate 15 is arranged to face the upper surface of the horizontal workbench.

[0356] Subsequently, a first residual stress rate and a second residual stress rate can be measured. The first residual stress rate can be a residual stress rate of the first sample metal plate, and the second residual stress rate can be a residual stress rate of the second sample metal plate. In detail, the first residual stress rate can be a residual stress rate of the first sample metal plate having a size of about 200 mm * 30 mm (width * length) in a first direction that is a horizontal direction, and the second residual stress rate is a residual stress rate of the second sample metal plate having a size of about 200 mm * 30 mm (width * length) in a second direction that is a horizontal direction. The sample metal plate 15 disposed on the horizontal workbench can be warped due to internal stress caused by a rolling process. In detail, one end of at least one of the etched regions of the sample metal plate 15 can be warped in a direction away from the upper surface of the horizontal workbench.

[0357] More specifically, at least one end portion of one surface of the half-etched sample metal plate 15 can be warped toward the center of the sample metal plate 15 while being separated from the upper surface of the horizontal stage. That is, one end portion of the sample metal plate 15 can be warped in a direction away from the horizontal stage due to internal stress, and the one end portion can be warped into a roll shape according to the magnitude of the internal stress.

[0358] That is, the residual stress rate of the sample metal plate 15 can be calculated by measuring the height of the half-etched region of the sample metal plate 15 spaced apart from the upper surface of the horizontal stage, and can satisfy the following [Equation].

[0359] [Equation]

[0360] Residual stress rate = H / L

[0361] (H: the maximum height by which the etched region of the sample metal plate is lifted and warped from the upper surface of the horizontal stage, L: the length in the horizontal direction in which the etched region of the sample metal plate is formed)

[0362] The residual stress rate of the sample metal plate 15 can be measured by the above-described method. At this time, the residual stress rate can be a value obtained by using a plurality of sample metal plates 15. For example, the first residual stress rate of the first sample metal plate can be a value derived from the average of a plurality of first sample metal plates measured by the above-described method. In addition, the second residual stress rate of the second sample metal plate can be a value derived from the average of a plurality of second sample metal plates measured by the above-described method. That is, the residual stress rate can be an average residual stress rate.

[0363] The residual stress rate of the sample metal plate 15 can be about 0.06 or less. In detail, the residual stress rate of the sample metal plate 15 can be about 0.0333 (5 / 150) or less. For example, the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate can be about 0.06 or less. Preferably, the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate can be about 0.0333 (5 / 150) or less.

[0364] When the residual stress rate of the sample metal plate 15 exceeds about 0.06, a warping phenomenon (a wave deformation) can occur in the metal plate 10, and a process failure can occur during the manufacturing of the deposition mask 100 using the metal plate. In addition, when the deposition mask 100 manufactured by using the metal plate 10 deposits an organic material, a deposition failure can occur. In detail, due to the warping phenomenon, the position, shape, etc. of the through hole TH formed in the deposition mask 100 can not be uniform, and thus the deposition efficiency can be reduced and a deposition failure can occur. Therefore, it is preferable that the residual stress rate of the metal plate 10 satisfies the above range, and it is more preferable that the residual stress rate is close to zero. That is, when the residual stress rate of the metal plate 10 exceeds the above range, the metal plate 10 can not be suitable as a metal plate for manufacturing the deposition mask 100.

[0365] The residual stress rates of the first and second sample metal plates can be different from each other. For example, the first residual stress rate of the first sample metal plate extending in the rolling direction RD can be less than the second residual stress rate of the second sample metal plate extending in the transverse direction TD.

[0366] In this case, the first sample metal plate can be warped in the second direction, and the second sample metal plate can be warped in the second direction. In detail, two corners extending in the long axis direction in the first sample metal plate can tend to be warped and curled toward the central portion of the first sample metal plate due to internal stress. In addition, one corner of the two corners extending in the short axis direction in the second sample metal plate, which is located in the etching area, can tend to be warped and curled toward the central portion of the second sample metal plate due to internal stress.

[0367] The difference between the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate can be about 0.0333 (5 / 150). In more detail, the difference between the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate can be about 0.02 (3 / 150). When the difference between the residual stress rates exceeds about 0.0333 (5 / 150), the warping phenomenon can be concentrated in the first direction, which is the rolling direction RD, or the second direction, which is the transverse direction TD, of the metal plate 10, and a process failure can occur when the metal plate 10 is used to manufacture the deposition mask 100. Therefore, it is preferable that the difference between the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate is within the above range, and it is more preferable that the difference between the residual stress rates is close to zero and small.

[0368] However, examples are not limited thereto, and within the range of the residual stress ratio described above, the first residual stress ratio of the first sample metal plate can be greater than the second residual stress ratio of the second sample metal plate. Also, within the range of the difference in the residual stress ratio described above, the first residual stress ratio of the first sample metal plate can be greater than the second residual stress ratio of the second sample metal plate. In this case, the first sample metal plate can be warped in the first direction, and the second sample metal plate can be warped in the first direction. In detail, one of the two corners located in the etching region among the two corners extending in the short axis direction in the first sample metal plate can tend to be warped and curled toward the central portion of the first sample metal plate. Also, the two corners extending in the long axis direction in the second sample metal plate can tend to be warped and curled toward the central portion of the second sample metal plate.

[0369] The deposition mask 100 can be manufactured by supplying the metal plate 10 in a roll-to-roll method. In this case, the metal plate 10 can be supplied in the long axis direction of the metal plate 10, and can be supplied while a predetermined amount of tension is applied in the long axis direction of the metal plate by the roll-to-roll method. That is, the metal plate 10 can be supplied while tension is applied in the rolling direction RD of the metal plate 10.

[0370] Also, in the manufacturing process of the deposition mask 100 for forming a via hole or the like on the metal plate 10, a separate tension can be further applied to the metal plate 10 in the long axis direction of the metal plate 10. That is, a separate tension can be further applied in the rolling direction RD of the metal plate 10.

[0371] Accordingly, the metal plate 10 can be pulled in the rolling direction RD. Therefore, it is preferable that the residual stress ratio in the rolling direction RD of the metal plate 10 is less than the residual stress ratio in the transverse direction TD. In detail, it can be preferable that the first residual stress ratio of the metal plate 10 is less than the second residual stress ratio thereof. That is, it can be preferable that the residual stress ratio of the first sample metal plate extracted from the metal plate 10 in the first direction which is the rolling direction RD is less than the residual stress ratio of the second sample metal plate extracted in the second direction which is the transverse direction TD.

[0372] As an example, when the first residual stress ratio of the metal plate 10 is greater than the second residual stress ratio, many warping phenomena can occur in the first direction of the metal plate 10, and thus many deformations can occur. Therefore, when the metal plate 10 is supplied by the roll-to-roll method, the length of the supplied metal plate 10 can not be uniform due to the deformations. Also, in the process of forming a via hole or the like on the metal plate 10, the uniformity of the position and shape of the formed via hole can be reduced due to the deformations caused by the warping phenomena.

[0373] Therefore, it can be preferable that the first residual stress rate of the metal plate 10 be lower than the second residual stress rate of the metal plate 10 than that the first residual stress rate of the metal plate 10 be higher than the second residual stress rate of the metal plate 10. Therefore, even if the metal plate 10 is pulled in the rolling direction RD during the manufacturing process of the deposition mask 100, a uniform and precise pattern can be formed.

[0374] Hereinafter, the operation and effects of the present application will be described in more detail with reference to examples and comparative examples.

[0375] Comparative Example 2

[0376] A sample metal plate having a thickness of about 25 μm and containing about 63.5% to about 64.5% by weight of iron and about 35.5% to about 36.5% by weight of nickel was extracted from the metal plate.

[0377] The size of the sample metal plate was 200 mm * 30 mm (width * length), and a first sample metal plate was extracted in the rolling direction RD of the metal plate, and a second sample metal plate was extracted in the transverse direction TD.

[0378] The length in the horizontal direction of the first sample metal plate can be 200 mm, and the horizontal direction of the first sample metal plate can be the rolling direction RD. Also, the length in the horizontal direction of the second sample metal plate can be 200 mm, and the horizontal direction of the second sample metal plate can be the transverse direction TD.

[0379] Subsequently, a region of about 150 mm * 30 mm (width * length), which is a region of more than 50 mm, was half-etched while leaving a region of 50 mm from one end in the horizontal direction of the sample metal plate. The half-etching was performed until the thickness of the etched region became about 30% to about 70% of the thickness of the region which was not etched.

[0380] The sample metal plate after the half-etching process was disposed on a horizontal workbench. In this case, the other surface of the sample metal plate opposite the half-etched surface was disposed to face the upper surface of the horizontal workbench.

[0381] Three of each of the first sample metal plate and the second sample metal plate were manufactured in the above-described method, the average value in each direction was derived by measuring the maximum height at which the end of each sample metal plate disposed on the horizontal workbench was spaced apart from the horizontal workbench, and the residual stress rate was calculated based on the average value.

[0382] Figure 28

[0383] Three sample metal sheets were manufactured in the same manner as in Example 1 for each of the rolling direction RD and the transverse direction TD, except that the sample metal sheets were extracted from a metal sheet having a thickness of about 30 μm and containing about 63.5% to about 64.5% by weight of iron and about 35.5% to about 36.5% by weight of nickel.

[0384] Subsequently, the sample metal sheets were arranged on a horizontal workbench, and an average value of each direction was derived by measuring a maximum height at which the end of each sample metal sheet disposed on the horizontal workbench was spaced apart from the horizontal workbench, and a residual stress rate was calculated based on the average value.

[0385] Figure 29

[0386] Three sample metal sheets were manufactured in the same manner as in Example 1 for each of the rolling direction RD and the transverse direction TD, except that the sample metal sheets were extracted from a metal sheet having a thickness of about 30 μm and containing about 63.5% to about 64.5% by weight of iron and about 35.5% to about 36.5% by weight of nickel.

[0387] Subsequently, the sample metal sheets were arranged on a horizontal workbench, and an average value of each direction was derived by measuring a maximum height at which the end of each sample metal sheet disposed on the horizontal workbench was spaced apart from the horizontal workbench, and a residual stress rate was calculated based on the average value.

[0388] Figure 28

[0389] Three sample metal sheets were manufactured in the same manner as in Example 1 for each of the rolling direction RD and the transverse direction TD, except that the sample metal sheets were extracted from a metal sheet having a thickness of about 30 μm and containing about 63.5% to about 64.5% by weight of iron and about 35.5% to about 36.5% by weight of nickel.

[0390] Subsequently, the sample metal sheets were arranged on a horizontal workbench, and an average value of each direction was derived by measuring a maximum height at which the end of each sample metal sheet disposed on the horizontal workbench was spaced apart from the horizontal workbench, and a residual stress rate was calculated based on the average value.

[0391] Figure 29

[0392] Three sample metal sheets were manufactured in the same manner as in Example 1, except that the sample metal sheets were extracted from a metal sheet having a thickness of about 30 μm and containing about 63.5% to about 64.5% by weight of iron and about 35.5% to about 36.5% by weight of nickel, for each of the rolling direction RD and the transverse direction TD.

[0393] Subsequently, the sample metal sheets were arranged on a horizontal workbench, and the average value of each direction was derived by measuring the maximum height at which the end of each sample metal sheet disposed on the horizontal workbench was spaced apart from the horizontal workbench, and the residual stress rate was calculated based on the average value.

[0394] Figure 30

[0395] Three sample metal sheets were manufactured in the same manner as in Example 1, except that the sample metal sheets were extracted from a metal sheet having a thickness of about 25 μm and containing about 63.5% to about 64.5% by weight of iron and about 35.5% to about 36.5% by weight of nickel, for each of the rolling direction RD and the transverse direction TD.

[0396] Subsequently, the sample metal sheets were arranged on a horizontal workbench, and the average value of each direction was derived by measuring the maximum height at which the end of each sample metal sheet disposed on the horizontal workbench was spaced apart from the horizontal workbench, and the residual stress rate was calculated based on the average value.

[0397] [Table 5]

[0398]

[0399] Referring to Table 5, it can be seen that the residual stress rate of a thin metal sheet can be measured. In detail, it can be seen that the residual stress rate of a metal sheet having a thickness of about 30 μm or less can be measured, and the residual stress rate of a metal sheet having a thickness of about 20 μm can be measured.

[0400] In addition, referring to Table 5, in the residual stress rates of the sample metal sheets according to the examples and the comparative examples, it can be seen that the residual stress rate of the first sample metal sheet extending in the rolling direction RD is less than the residual stress rate of the second sample metal sheet extending in the transverse direction TD. In addition, it can be seen that the residual stress rate of the sample metal sheet according to the examples is 0.06 or less. In detail, it can be seen that the residual stress rate of each of the first and second sample metal sheets according to the examples is 0.06 or less. That is, the metal sheet according to the examples can have a low residual stress rate, thereby minimizing a warping phenomenon. When a metal sheet is used to manufacture a deposition mask, the position and shape of a via hole can be accurately formed on the metal sheet.

[0401] On the other hand, in the case of Comparative Example 1, the residual stress ratio of the first sample metal plate extending in the rolling direction RD is 0.06 or less, whereas the residual stress ratio of the second sample metal plate extending in the transverse direction TD exceeds 0.06. Thus, the sample metal plate of Comparative Example 1 is likely to warp in the transverse direction TD. In the case of Comparative Example 2, the residual stress ratio of the first sample metal plate extending in the rolling direction RD exceeds 0.06, and since the second sample metal plate extending in the transverse direction TD warps and curls in the transverse direction TD, it cannot be measured. That is, in the metal plate according to the comparative example, both the residual stress ratio in the rolling direction RD and the residual stress ratio in the transverse direction TD are large. In particular, since the residual stress ratio in the transverse direction TD is very large, the metal plate of the comparative example tends to warp in the transverse direction TD. Thus, when a deposition mask is manufactured using the metal plate of the comparative example, the positions and shapes of the through-holes formed in the metal plate can not be uniform.

[0402] In the example, the residual stress of the metal plate 10 manufactured in a thin manner by a rolling process can be effectively measured. In detail, the residual stress of the metal plate 10 having a thickness of about 30 μm or less can be measured. More in detail, the residual stress can be measured without being affected by the thickness of the metal plate 10.

[0403] In addition, the metal plate 10 measured by the above-described method can have a residual stress ratio of about 0.06 or less. In detail, the residual stress ratio of the metal plate in the rolling direction RD and the residual stress ratio in the transverse direction TD can be about 0.06 or less. Thus, in the example, the metal plate 10 can be used to manufacture a deposition mask 100 having a more precise pattern.

[0404] Figure 30 and Figure 6a are views showing a deposition pattern formed via a deposition mask according to an embodiment.

[0405] Referring to Figure 6a In the deposition mask 100 according to the embodiment, a height H1 between one surface of the deposition mask 100 in which the small surface hole V1 is formed and the communication portion can be about 3.5 μm or less. For example, the height H1 can be about 0.1 μm to about 3.4 μm. For example, the height H1 can be about 0.5 μm to about 3.2 μm. For example, the height H1 can be about 1 μm to about 3 μm.

[0406] Accordingly, the distance between one surface of the deposition mask 100 and the substrate on which the deposition pattern is disposed can be short, and thus, a deposition defect due to a shadow effect can be reduced. For example, by using the deposition mask 100 according to the embodiment, a defect in which different deposition materials are deposited in the area between two adjacent patterns when forming R, G, and B patterns can be prevented. In particular, as shown in FIG. 1, when the above-described patterns are formed in the order of R, G, and B from the left, the R pattern and the G pattern can be prevented from being deposited in the area between the R pattern and the G pattern by the shadow effect. Figure 30

[0407] In addition, the deposition mask 100 according to the embodiment can be manufactured using a metal plate having a residual stress rate of 0.06 or less. In detail, the deposition mask 100 can be manufactured using a metal plate having a residual stress rate in a rolling direction RD and a residual stress rate in a transverse direction TD of 0.06 or less. Accordingly, the occurrence of a warping phenomenon in the metal plate 10 can be minimized when manufacturing the deposition mask 100. Thus, the small surface hole V1, the large surface hole V2, and the through hole TH can be uniformly and precisely formed on the metal plate 10.

[0408] In addition, since the deposition mask 100 according to the embodiment is manufactured by using a metal plate in which a residual stress is measured in advance, a high resolution pattern having 400 PPI or more, and further 800 PPI or more, can be precisely implemented, and when an organic material is deposited on the substrate 300 using the deposition mask 100, the deposition efficiency of the organic material can be improved.

[0409] Meanwhile, the inclination angle of the large surface hole formed in the deposition mask affects the height or thickness of the central portion of the rib. That is, when the inclination angle of the large surface hole is less than a predetermined range, the thickness of the central portion of the rib connected between the through holes becomes thin. In addition, when the thickness of the central portion of the rib becomes thin, the rigidity of the deposition mask is reduced, thereby causing length deformation of the deposition mask such as tensile deformation, total pitch deformation, and sagging. Further, with the length deformation, the uniformity of the shape of the mask pattern and the position of the through hole can be reduced. Furthermore, when the diameter of the through hole is not uniform, the pattern deposition efficiency can be reduced, thereby causing a deposition defect.

[0410] In addition, when the inclination angle of the large surface hole formed in the deposition mask is greater than a predetermined range, there is a problem in that a portion of the organic material does not pass through the through hole when the organic material is deposited on the substrate. In detail, in an area in which the through hole positioned in a direction perpendicular to the moving direction of the organic material deposition container or does not overlap the organic material deposition container, the moving distance of the organic material is longer, and thus, there is a problem in that a portion of the organic material cannot pass through the through hole and is deposited on an island-shaped portion formed between adjacent through holes or on the inner surface of the large surface hole of the through hole.​

[0411] Thus, in this embodiment, it is possible to provide a deposition mask that can uniformly form a high-resolution or ultra-high-resolution (UHD level) pattern without deposition failure and can prevent various length distortions.

[0412] Figure 6a is a view showing a plan view of an effective portion of a deposition mask 100A according to another embodiment of the present application.

[0413] As Figure 30 indicated, the large surface hole V2 can include a plurality of etching surfaces. That is, in Figure 30 , it has been described that the large surface hole V2 includes the second etching surface ES2. At this time, Figure 30 , the large surface hole V2 etching surface also substantially includes a plurality of etching surfaces, but the plurality of etching surfaces are formed under the same conditions. On the other hand, Figure 30 , the deposition mask 100A in

[0414] That is, in the deposition mask 100 of Figure 31 , the large surface hole V2 is formed at the same time as having the second etching surface ES2 under the same conditions in general, but in the deposition mask 100A in Figure 30 , the large surface hole V2 can be formed at the same time as having the second etching surface ES2 and the third etching surface ES3 under different conditions.

[0415] Here, Figure 32 , the large surface hole V2 and the small surface hole V1 of the deposition mask in the embodiment are arranged to be aligned with each other. In other words, the center of the small surface hole V1 and the center of the large surface hole V2 formed in all regions of the deposition mask are aligned. For example, the center of the small surface hole V1 and the center of the large surface hole V2 formed in all regions of the deposition mask can be positioned on the same vertical line.

[0416] Meanwhile, the etching surface can also be referred to as the inner surface of the large surface hole V2.

[0417] As Figure 30 indicated, as in another embodiment of the present disclosure, the large surface hole V2 can include the second etching surface ES2 and the third etching surface ES3. The large surface hole is formed by connecting a plurality of second etching surfaces ES2 with a plurality of third etching surfaces ES3. Preferably, the plurality of second etching surfaces ES2 and the plurality of third etching surfaces ES3 form one large surface hole.

[0418] The second etching surface ES2 of the large surface hole is an inner surface positioned in a horizontal direction with respect to the center of the large surface hole of the through hole. Preferably, the second etching surface ES2 is an inner surface positioned at both sides in a longitudinal direction with respect to the center of the large surface hole. The second etching surface ES2 is an inner surface positioned at both sides in a stretching direction with respect to the center of the large surface hole. The second etching surface ES2 is an inner surface positioned at both sides in an X-axis direction with respect to the center of the large surface hole. Accordingly, the second etching surface ES2 includes a first secondary second etching surface ES2-1 positioned in a first longitudinal direction with respect to the center of the large surface hole of the through hole and a second secondary second etching surface ES2-2 in a second longitudinal direction opposite to the first longitudinal direction. Meanwhile, in the other surface of the deposition mask, the cross-sectional inclination angle of the first secondary second etching surface ES2-1 can correspond to the cross-sectional inclination angle of the second secondary second etching surface ES2-2. That is, the cross-sectional inclination angle θ of the first secondary second etching surface ES2-1 and the cross-sectional inclination angle θ of the second secondary second etching surface ES2-2 can be the same.

[0419] The third etching surface ES3 of the large surface hole is an inner surface positioned in a vertical direction with respect to the center of the large surface hole of the through hole. Preferably, the third etching surface ES3 is an inner surface positioned at both sides in a lateral direction with respect to the center of the large surface hole. The third etching surface ES3 is an inner surface positioned at both sides in a direction perpendicular to the stretching direction with respect to the center of the large surface hole. The third etching surface ES3 is an inner surface positioned at both sides in a Y-axis direction with respect to the center of the large surface hole. Accordingly, the third etching surface ES3 includes a first secondary third etching surface ES3-1 positioned in a first lateral direction with respect to the center of the large surface hole of the through hole and a second secondary third etching surface ES3-2 positioned in a second lateral direction opposite to the first lateral direction. Meanwhile, the cross-sectional inclination angle of the first secondary third etching surface ES3-1 can correspond to the cross-sectional inclination angle of the second secondary third etching surface ES3-2. That is, the inclination angle θ of the first secondary third etching surface ES3-1 and the inclination angle θ of the second secondary third etching surface ES3-2 can be the same.

[0420] Meanwhile, the cross-sectional inclination angle θ of the second etching surface ES2 can be different from the cross-sectional inclination angle θ of the third etching surface ES3. That is, the cross-sectional inclination angle θ of the second etching surface ES2 can be smaller than the cross-sectional inclination angle θ of the third etching surface ES3. That is, in the large surface hole of the through hole, the cross-sectional inclination angle θ of the etching surface in the lateral direction intersecting the longitudinal direction can be greater than the cross-sectional inclination angle θ of the etching surface in the longitudinal direction.

[0421] The second etching surface ES2 and the third etching surface ES3 can be surfaces formed by an etching factor during an etching process. The second etching surface ES2 and the third etching surface ES3 can be inner surfaces extending from the through holes TH to the other surface 102 of the deposition mask 100. For example, the second etching surface ES2 and the third etching surface ES3 can extend from the end portions of the through holes TH toward the adjacent through holes TH, and can extend toward the island-shaped portions IS. In addition, the second etching surface ES2 and the third etching surface ES3 can extend in the direction of the unactive portion UA. That is, the second etching surface ES2 and the third etching surface ES3 can extend in the direction in which the non-etching surfaces are formed in the other surface 102 of the deposition mask 100.

[0422] The ribs RB1 and RB can be positioned between the through holes TH. For example, referring to FIG. 1, one second rib RB2 can be formed between the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction. In addition, another first rib RB1 can be formed between the first through hole TH1 and the third through hole TH3 adjacent in the vertical direction. Figure 33

[0423] The first rib RB1 is arranged to extend in the longitudinal direction on the deposition mask 100. The first rib RB1 is positioned in the longitudinal direction between the plurality of through holes arranged on the deposition mask 100 in the lateral direction. The first rib RB1 is connected between the plurality of island-shaped portions IS arranged on the deposition mask 100 in the longitudinal direction.

[0424] The second rib RB2 is provided to extend in the lateral direction on the deposition mask 100. The second rib RB2 is formed in the lateral direction between the plurality of through holes arranged on the deposition mask 100 in the longitudinal direction. The second rib RB2 is connected between the plurality of island-shaped portions IS arranged on the deposition mask 100 in the lateral direction.

[0425] That is, the ribs RB1 and RB2 can be positioned between the through holes TH adjacent to each other. In detail, the ribs RB1 and RB2 can be positioned between the large surface holes V2 adjacent to each other. In more detail, the second rib RB2 can be positioned in an area in which the respective second etching surfaces ES2 of the large surface holes V2 adjacent to each other are connected to each other. In more detail, the first rib RB1 can be positioned in an area in which the respective third etching surfaces ES3 of the large surface holes V2 adjacent to each other are connected to each other. That is, the ribs RB1 and RB2 can be areas in which the boundaries of the large surface holes V2 adjacent to each other are connected.

[0426] ​A central portion of the first rib RB1 can have a first thickness T1. Also, a central portion of the second rib RB2 can have a second thickness T2 different from the first thickness T1. The thickness of the central portion of the first rib RB1 can be different from the thickness of the central portion of the second rib RB2. In detail, the thickness of the central portion of the first rib RB1 can be greater than the thickness of the central portion of the second rib RB2. That is, the first rib RB1 is positioned in a region where the third etching surface ES3 connecting adjacent through holes is positioned, and the second rib RB2 is positioned in a region where the second etching surface ES2 connecting adjacent through holes is positioned. In this case, the cross-sectional inclination angle of the third etching surface ES3 is greater than the cross-sectional inclination angle of the second etching surface ES2. Accordingly, the thickness of the central portion of the first rib RB1 positioned in a region connecting the second etching surface ES2 having a greater cross-sectional inclination angle can be greater than the thickness of the central portion of the second rib RB2 positioned in a region connecting the third etching surface ES3 having a smaller cross-sectional inclination angle. Meanwhile, the cross-sectional inclination angle will be described below.

[0427] Figure 30 is a view showing various cross sections overlapped for description of Figure 34 a height difference and a size between a cross section in the A-A' direction and a cross section in the B-B' direction.

[0428] First, a cross section in the A-A' direction will be described. The A-A' direction is a cross section crossing a central region between the first through hole TH1 and the third through hole TH3 adjacent in the vertical direction. That is, the cross section in the A-A' direction can not include the through holes TH.

[0429] An island-shaped portion IS of another surface not etched between the third etching surface ES3 in the large surface hole and the third etching surface ES3 in the large surface hole as a deposition mask can be positioned in the cross section in the A-A' direction. Accordingly, the island-shaped portion IS can include a surface parallel to one unetched surface of the deposition mask. Alternatively, the island-shaped portion IS can include a surface identical to or parallel to another unetched surface of the deposition mask.

[0430] Next, a cross section in the B-B' direction will be described. The B-B' direction is a cross section crossing a center of each of the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction. That is, the cross section in the B-B' direction can include a plurality of through holes TH.

[0431] One second rib RB2 can be positioned between the third through-hole TH3 and the fourth through-hole TH4 adjacent in the B-B' direction. Another second rib RB2 can be positioned between the fourth through-hole TH4 and the fifth through-hole adjacent to the fourth through-hole in the horizontal direction, but in the opposite direction to the third through-hole TH3. One through-hole TH can be positioned between one rib and another rib. That is, one through-hole TH can be positioned between two ribs RB adjacent in the horizontal direction.

[0432] Further, the first rib RB1 can be positioned in a cross-section in the A-A' direction, in which the first rib RB1 is a region connecting the etching surface ES3 in the large surface hole and the etching surface ES3 in the adjacent large surface hole to each other. Here, the first rib RB1 can be a region in which the boundaries of two adjacent large surface holes are connected.

[0433] Since the first rib RB1 and the second rib RB2 are etching surfaces, the thickness thereof can be smaller than the island-shaped portion IS. For example, the island-shaped portion can have a width of about 2 μm or more. That is, the width in a direction parallel to another surface on which a portion remains unetched can be about 2 μm or less. When one end portion and the other end portion of one island-shaped portion IS have a width of 2 μm or more, the total volume of the deposition mask 100 can increase. The deposition mask 100 having such a structure ensures sufficient rigidity against a pulling force applied to an organic material deposition process or the like, and thus is advantageous for maintaining the uniformity of the through-holes.

[0434] Figure 30 is a view showing a cross-sectional view taken along a line B-B' of Figures 32 to 34 is a view showing a cross-sectional view taken along a line C-C' of Figures 32 to 34 is a view showing a cross-sectional view taken along a line D-D' of Figures 32 to 34 is a view showing a cross-sectional view taken along a line C-C' of Figures 32 to 34 is a view showing a cross-sectional view taken along a line D-D' of Figures 32 to 34 is a view showing a cross-sectional view taken along a line D-D' of

[0435] Figures 32 to 34 differences between a cross-sectional inclination angle of the second etching surface ES2 and a cross-sectional inclination angle of the third etching surface ES3 in the through-hole are shown. Figure 35 differences between a thickness of the second rib RB2 positioned in a region connecting the second etching surface ES2 and a thickness of the first rib RB1 positioned in a region connecting the third etching surface ES3 are shown. Figure 36 differences between a height between one surface of the deposition mask 100 on which the small surface hole V1 is formed and the communication portion and a height between one surface of the deposition mask 100 on which the small surface hole V1 is formed and the communication portion in the second rib RB2 are shown.

[0436] Referring toFigure 35 A cross section along the B-B' direction, a cross section along the C-C' direction, and a vertical cross section and a horizontal cross section along the D-D' direction will be described. In addition, ribs RB1 and RB2 according to the embodiment and a through-hole TH between the ribs RB1 and RB2 located in the active area will be described. Figure 37

[0437] Referring to FIG. 1, the deposition mask 100 according to the embodiment includes a metal plate 10, a first rib RB1, a second rib RB2, and a through-hole TH. Figure 35 In the deposition mask 100 according to the embodiment, a thickness of the active portion AA in which the through-hole is formed by etching can be different from a thickness of the unactive portion UA which is not etched. In detail, a thickness of a central portion of the first rib RB1 and a central portion of the second rib RB2 can be smaller than a thickness of the unactive portion UA which is not etched.

[0438] In the deposition mask 100 according to the embodiment, a thickness of the unactive portion UA can be greater than thicknesses of the active portions AA1, AA2, and AA3. For example, in the deposition mask 100, a maximum thickness of the unactive portion UA or the non-deposition area NDA can be 30 µm or less. For example, in the deposition mask 100, a maximum thickness of the unactive portion UA or the non-deposition area NDA can be 25 µm or less. For example, in the deposition mask of the embodiment, a maximum thickness of the unactive portion or the non-deposition area can be 15 µm to 25 µm. When the maximum thickness of the unactive portion or the non-deposition area of the deposition mask according to the embodiment is greater than 30 µm, it can be difficult to form the through-hole TH having a fine size due to a thick thickness of the metal plate 10 which is a raw material of the deposition mask 100. In addition, when the maximum thickness of the unactive portion UA or the non-deposition area NDA of the deposition mask 100 is less than 15 µm, it can be difficult to form the through-hole having a uniform size due to a thin thickness of the metal plate.

[0439] A maximum thickness T1 and T2 measured at the central portions of the first rib RB1 and the second rib RB2 can be about 15 µm or less. For example, the maximum thickness T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 can be about 7 µm to about 10 µm. For example, the maximum thickness T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 can be about 6 µm to about 9 µm. When the maximum thickness T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 is greater than about 15 µm, it can be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or more. In addition, when the maximum thickness T1 and T2 measured at the center of the first rib RB1 and the second rib RB2 is less than about 6 µm, it can be difficult to uniformly form the deposition pattern.

[0440] ​Meanwhile, the maximum thicknesses T1 and T2 measured at the center of each of the first and second ribs RB1 and RB2 can be different from each other. In detail, the maximum thicknesses T1 and T2 measured at the center of each of the first and second ribs RB1 and RB2 can have different values while satisfying the above-described range. In more detail, the maximum thickness T1 measured at the center of the first rib RB1 can be greater than the maximum thickness T2 measured at the center of the second rib RB2. Within the above-described range, the maximum thickness T1 measured at the center of the first rib RB1 can have a greater value than the maximum thickness T2 measured at the center of the second rib RB2. In other words, the maximum thickness T1 measured at the center of the first rib RB1 can have a predetermined difference (Δ) from the maximum thickness T2 measured at the center of the second rib RB2.

[0441] The height of the small surface hole of the deposition mask 100 can be about 0.2 times to about 0.4 times the maximum thicknesses T1 and T2 of the second ribs RB1 and RB2. Accordingly, the height of the small surface hole formed on the first rib RB1 can be different from the height of the small surface hole formed on the second rib RB2. In other words, among the small surface holes of the through hole, the height of the small surface hole in the first direction (specifically, the longitudinal direction) can be different from the height of the small surface hole in the second direction (specifically, the lateral direction). In detail, the height H2 of the small surface hole formed on the first rib RB1 can be greater than the height H1 of the small surface hole formed on the second rib RB2.

[0442] As an example, the maximum thickness measured at the center of the first or second rib RB1 or RB2 can be about 7 μm to about 9 μm, and the height of the small surface hole between one surface of the deposition mask 100 and the communication portion can be about 1.4 μm to about 3.5 μm.

[0443] The height H2 of the small surface hole at the first rib RB1 of the deposition mask 100 can be about 4.0 μm or less. The height H1 of the small surface hole at the second rib RB2 of the deposition mask 100 can be about 3.5 μm or less.

[0444] Preferably, the height H2 of the small surface hole at the first rib RB1 of the deposition mask 100 can be about 3.5 μm or less. The height H1 of the small surface hole at the second rib RB2 of the deposition mask 100 can be about 2.5 μm or less.

[0445] Preferably, the height H2 of the small surface hole at the first rib RB1 can be about 0.1 pm to about 3.4 pm. The height H1 of the small surface hole at the second rib RB2 can be about 0.1 pm to about 2.4 pm. For example, the height of the small surface hole V1 at the first rib RB1 of the deposition mask 100 can be about 0.5 pm to about 3.2 pm. For example, the height of the small surface hole V1 at the second rib RB1 of the deposition mask 100 can be about 0.5 pm to about 2.2 pm. For example, the height of the small surface hole at the first rib RB1 of the deposition mask 100 can be about 1 pm to about 3 pm. For example, the height of the small surface hole at the second rib RB2 of the deposition mask 100 can be about 1 pm to about 2 pm. Here, the height can be measured in the thickness measurement direction of the deposition mask 100, that is, in the depth direction, and the height can be the height measured from one surface of the deposition mask 100 to the communication portion.

[0446] When the height between one surface of the deposition mask 100 and the communication portion is greater than about 3.5 pm, deposition failure can occur due to a shadow effect in which the deposition material diffuses to an area greater than the area of the through hole during OLED deposition. Accordingly, the height of the small surface hole at the first rib RB1 is set to 3.5 pm or less, and the height of the small surface hole at the second rib RB2 is set to 3.0 pm or less. Meanwhile, the height of the small surface hole at the first rib RB1 and the height of the small surface hole at the second rib RB2 can have a predetermined difference (D).

[0447] In addition, the aperture W3 at one surface of the deposition mask 100 in which the small surface hole V1 is formed and the aperture W4 at the communication portion which is the boundary between the small surface hole V1 and the large surface hole V2 can be similar to or different from each other. The aperture W3 at one surface of the deposition mask 100 can be greater than the aperture W4 at the communication portion. For example, the difference between the aperture W3 at one surface of the deposition mask 100 and the aperture W4 at the communication portion can be about 0.01 pm to about 1.1 pm. For example, the difference between the aperture W3 at one surface of the deposition mask 100 and the aperture W4 at the communication portion can be about 0.03 pm to about 1.1 pm. For example, the difference between the aperture W3 at one surface of the deposition mask 100 and the aperture W4 at the communication portion can be about 0.05 pm to about 1.1 pm.

[0448] When the difference between the aperture W1 at one surface of the deposition mask 100 and the aperture W2 at the communication portion is greater than about 1.1 pm, deposition failure can occur due to a shadow effect.

[0449] In addition, on a central portion of the second rib RB2, a cross-sectional inclined angle θ corresponding to an internal angle between a virtual first straight line corresponding to the other surface of the deposition mask 100 and a virtual second straight line connecting one end E1 of the second etching surface ES2 of the large surface hole V2 and one end E2 of the communication portion located between the small surface hole V1 and the large surface hole V2 can be 35 degrees to 45 degrees. On a central portion of the first rib RB1, a cross-sectional inclined angle θ corresponding to an internal angle between the virtual first straight line corresponding to the other surface of the deposition mask 100 and a virtual third straight line connecting one end E3 of the third etching surface ES3 of the large surface hole V2 and one end E4 of the communication portion can be 45 degrees to 55 degrees.

[0450] In other words, the cross-sectional inclined angle of the large surface hole can be defined as follows. The cross-sectional inclined angle of the large surface hole can be an internal angle between a virtual first straight line and a virtual second straight line. In this case, the first straight line can refer to the other surface of the deposition mask corresponding to the second etching surface or the third etching surface of the large surface hole V2. In this case, the other surface can be a surface of the deposition mask that is unetched in a flat state. In addition, the virtual second straight line can be a straight line connecting one end of the etching surface of the large surface hole V2 and one end of the communication portion.

[0451] Accordingly, a deposition pattern having a high resolution of 400 PPI or more, particularly 500 PPI or more, can be formed, and at the same time, the island-shaped portion IS can exist on the other surface of the deposition mask 100.

[0452] According to the embodiment, the large surface hole of the through hole has a first cross-sectional inclined angle in a longitudinal direction and a second cross-sectional inclined angle greater than the first cross-sectional inclined angle in a lateral direction, and the thickness of the rib arranged in the longitudinal direction can be increased by a difference between the first cross-sectional inclined angle and the second cross-sectional inclined angle, thereby securing the rigidity of the deposition mask. In addition, since the rigidity of the deposition mask is secured, the length deformation can be minimized, and thus, the pattern deposition efficiency can be improved by increasing uniformity of the shape of the mask pattern and the position of the through hole.

[0453] In addition, according to the embodiment, the OLED pixel pattern can be uniformly deposited in all regions regardless of the position of the through hole by reducing the inclined angle of the large surface hole of the through hole in a direction perpendicular to the moving direction of the organic deposition container.

[0454] Figure 30 FIG. 1 is a plan view showing an effective portion of a deposition mask according to an embodiment of the present application, Figure 35 FIG. 1 is a plan view showing an effective portion of a deposition mask according to an embodiment of the present application, Figure 35a cross-sectional view of the second via hole in the deposition mask, Figure 30 is a cross-sectional view of the third via hole in the deposition mask. Figure 35

[0455] compared to the deposition mask in Figures 31 to 34 ​ The deposition mask in has a difference in the via hole arranged at the outermost portion of the effective portion. Accordingly, hereinafter, only the via hole arranged at the outermost portion of the effective portion in ​ ​ is described in contrast to

[0456] Referring to ​ , the effective portion of the deposition mask can include a plurality of via holes. The plurality of via holes can include a first via hole VH1 arranged in an inner region of the effective portion, a second via hole VH2 arranged in a first outermost portion of the effective portion, and a third via hole VH3 arranged in a second outermost portion of the effective portion.

[0457] The first via hole VH1 is the same as the via hole described in ​ . That is, the first via hole VH1 includes a second etching surface ES2 and a third etching surface ES3. The second etching surface ES2 includes a first secondary second etching surface ES2-1 and a second secondary second etching surface ES2-2 facing each other in a longitudinal direction and having the same first cross-sectional inclination angle.

[0458] In addition, the third etching surface ES3 includes a first secondary third etching surface ES3-1 and a second secondary third etching surface ES3-2 facing each other in a lateral direction and having the same second cross-sectional inclination angle. Further, the first cross-sectional inclination angle of the first via hole VH1 is smaller than the second cross-sectional inclination angle of the first via hole VH1.

[0459] Meanwhile, the second via hole VH2 can be provided at the first outermost portion of the effective portion, and the third via hole VH3 can be provided at the second outermost portion opposite to the first outermost portion. In detail, the first outermost portion can be an outermost region of a first longitudinal direction in the effective portion. In this case, the first longitudinal direction can be a left direction. Accordingly, the first outermost portion can be a region positioned at the leftmost side in the effective portion. The second outermost portion can be an outermost region of a second longitudinal direction in the effective portion. In this case, the second longitudinal direction can be a right direction. Accordingly, the second outermost portion can be a region positioned at the rightmost side in the effective portion.

[0460] The second via hole VH2 is provided in the first outermost portion, and the third via hole VH3 is provided in the second outermost portion.

[0461] ​​​Like the first via hole VH1, the large surface hole of the second via hole VH2 includes the second etching surface ES2 and the third etching surface ES3. In this case, the third etching surface ES3 of the large surface hole of the second via hole VH2 can have the same cross-sectional inclination angle as the third etching surface ES3 of the large surface hole of the first via hole VH1. However, the cross-sectional inclination angle of the second etching surface ES2 of the large surface hole of the second via hole VH2 can be different from the cross-sectional inclination angle of the second etching surface ES2 of the large surface hole of the first via hole VH1.

[0462] The second etching surface ES2 of the large surface hole of the second via hole VH2 has a third secondary second etching surface ES2-3 and a fourth secondary second etching surface ES2-4 facing each other in the longitudinal direction.

[0463] In this case, the third secondary second etching surface ES2-3 is positioned in a region adjacent to the non-active part UA, and the fourth secondary second etching surface ES2-4 is positioned in a region adjacent to an inner region (which can refer to a central region) of the active part.

[0464] In addition, the third secondary second etching surface ES2-3 has a third cross-sectional inclination angle, and the fourth secondary second etching surface ES2-4 has a fourth cross-sectional inclination angle. In this case, the third cross-sectional inclination angle and the fourth cross-sectional inclination angle can be different from each other. That is, the third secondary second etching surface ES2-3 can have a cross-sectional inclination angle different from that of the fourth secondary second etching surface ES2-4. Preferably, the cross-sectional inclination angle of the third secondary second etching surface ES2-3 can be greater than the cross-sectional inclination angle of the fourth secondary second etching surface ES2-4.

[0465] In addition, the thickness of the third rib connected to the third secondary second etching surface ES2-3 and the thickness of the fourth rib connected to the fourth secondary second etching surface ES2-4 can also be different from each other. That is, the thickness of the third rib connected to the third secondary second etching surface ES2-3 can be thicker than the thickness of the fourth rib connected to the fourth secondary second etching surface ES2-4.

[0466] The maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can be about 15 μm or less. For example, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can be from about 7 μm to about 10 μm. For example, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can be from about 6 μm to about 9 μm. When the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs exceed about 15 μm, it may be difficult to form OLED deposition patterns with a high resolution of 500 PPI or higher. Additionally, when the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs are less than about 6 μm, it may be difficult to form deposition patterns uniformly.

[0467] Furthermore, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can be different from each other. Specifically, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can have different values ​​while satisfying the above-mentioned range. More specifically, the maximum thickness T4 measured at the center of the fourth rib can be smaller than the maximum thickness T3 measured at the center of the third rib. Within the above-mentioned range, the maximum thickness T4 measured at the center of the fourth rib can have a smaller value than the maximum thickness T3 measured at the center of the third rib.

[0468] The height of the small surface aperture in the second via VH2 of the deposition mask 100 can be approximately 0.2 to approximately 0.4 times the maximum thicknesses T3 and T4 measured at the centers of the third and fourth ribs. Therefore, the height of the small surface aperture formed on the central portion of the fourth rib can differ from the height of the small surface aperture formed on the central portion of the third rib. Specifically, the height H4 of the small surface aperture formed on the central portion of the fourth rib can be less than the height H3 of the small surface aperture formed on the central portion of the third rib.

[0469] As an example, the maximum thickness measured at the center of the third or fourth rib is about 7 μm to about 9 μm, and the height of the small surface hole located between a surface of the second through hole of the deposition mask 100 and the connecting portion is about 1.4 μm to about 3.5 μm.

[0470] The height H4 of the small surface aperture located at the center of the third rib of the deposition mask 100 can be about 4.0 μm or less. The height H1 of the small surface aperture located at the center of the fourth rib of the deposition mask 100 can be about 3.5 μm or less.

[0471] Preferably, the height H3 of the small surface hole located at the center of the third rib of the second through-hole of the deposition mask 100 can be about 3.5 μm or less. The height H4 of the small surface hole located at the center of the fourth rib of the second through-hole of the deposition mask 100 can be about 2.5 μm or less.

[0472] Preferably, the height H3 of the small surface hole located at the third rib can be about 0.1 μm to about 3.4 μm. The height H4 of the small surface hole located at the fourth rib can be about 0.1 μm to about 2.4 μm. For example, the height of the small surface hole V1 located at the third rib of the deposition mask 100 can be about 0.5 μm to about 3.2 μm. For example, the height of the small surface hole V1 located at the fourth rib of the deposition mask 100 can be about 0.5 μm to about 2.2 μm. For example, the height of the small surface hole located at the central portion of the third rib of the deposition mask 100 can be about 1 μm to about 3 μm. For example, the height of the small surface hole located at the central portion of the fourth rib of the deposition mask 100 can be about 1 μm to about 2 μm. Here, the height can be measured in the thickness measurement direction of the deposition mask 100, i.e., in the depth direction, and the height from one surface of the deposition mask 100 to the communication portion can be measured. When the height between one surface of the deposition mask 100 and the communication portion exceeds about 3.5 μm, a poor deposition can occur due to a shadow effect in which the deposition material diffuses to an area larger than the area of the through hole during OLED deposition. Accordingly, the height of the small surface hole located at the central portion of the third rib is set to 3.5 μm or less, and the height of the small surface hole located at the central portion of the fourth rib is set to 3.0 μm or less.

[0473] In addition, on the central portion of the third rib, the cross-sectional inclination angle θ corresponding to the internal angle between the flat virtual first straight line corresponding to the other surface of the deposition mask 100 and the virtual second straight line connecting one end E5 of the third secondary second etching surface ES2-3 of the large surface hole V2 and one end E6 of the communication portion can be 45 degrees to 55 degrees. On the central portion of the fourth rib, the cross-sectional inclination angle θ corresponding to the internal angle between the flat virtual first straight line corresponding to the other surface of the deposition mask 100 and the virtual third straight line connecting one end E7 of the fourth secondary second etching surface ES2-4 of the large surface hole V2 and one end E8 of the communication portion can be 35 degrees to 45 degrees.

[0474] Meanwhile, like the first through hole VH1, the large surface hole of the third through hole VH3 includes a second etching surface ES2 and a third etching surface ES3. In this case, the third etching surface ES3 of the large surface hole of the third through hole VH3 can have the same cross-sectional inclination angle as that of the third etching surface ES3 of the large surface hole of the first through hole VH1. However, the cross-sectional inclination angle of the second etching surface ES2 of the large surface hole of the third through hole VH3 can be different from that of the second etching surface ES2 of the large surface hole of the first through hole VH1.

[0475] The second etching surface ES2 of the large surface hole of the third via hole VH3 includes a fifth secondary second etching surface ES2-5 and a sixth secondary second etching surface ES2-6 facing each other in the longitudinal direction.

[0476] In this case, the fifth secondary second etching surface ES2-5 is positioned in a region adjacent to the non-active part UA, and the sixth secondary second etching surface ES2-5 is positioned in a region adjacent to an inner region (which can be referred to as a central region) of the active part.

[0477] In addition, the fifth secondary second etching surface ES2-5 has a fifth cross-sectional inclination angle, and the sixth secondary second etching surface ES2-6 has a sixth cross-sectional inclination angle. In this case, the fifth cross-sectional inclination angle and the sixth cross-sectional inclination angle can be different from each other. That is, the fifth secondary second etching surface ES2-5 can have a cross-sectional inclination angle different from that of the sixth secondary second etching surface ES2-6. Preferably, the cross-sectional inclination angle of the fifth secondary second etching surface ES2-5 can be greater than the cross-sectional inclination angle of the sixth secondary second etching surface ES2-6.

[0478] In addition, the thickness of the central portion of the fifth rib connected to the fifth secondary second etching surface ES2-5 and the thickness of the central portion of the sixth rib connected to the sixth secondary second etching surface ES2-6 can also be different from each other. That is, the thickness of the central portion of the fifth rib connected to the fifth secondary second etching surface ES2-5 can be thicker than the thickness of the central portion of the sixth rib connected to the sixth secondary second etching surface ES2-6.

[0479] The maximum thickness T5 and T6 measured at the center of each of the fifth rib and the sixth rib can be about 15 µm or less. For example, the maximum thickness T5 and T6 measured at the center of each of the fifth rib and the sixth rib can be about 7 µm to about 10 µm. For example, the maximum thickness T5 and T6 measured at the center of each of the fifth rib and the sixth rib can be about 6 µm to about 9 µm. When the maximum thickness T5 and T6 measured at the center of each of the fifth rib and the sixth rib exceeds about 15 µm, it can be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or more. In addition, when the maximum thickness T5 and T6 measured at the center of each of the fifth rib and the sixth rib is less than about 6 µm, it can be difficult to uniformly form a deposition pattern.

[0480] Meanwhile, the maximum thickness T5 and T6 measured at the center of each of the fifth rib and the sixth rib can be different from each other. In detail, the maximum thickness T5 and T6 measured at the center of each of the fifth rib and the sixth rib can have different values while satisfying the above-described range. In more detail, the maximum thickness T6 measured at the center of the sixth rib can be smaller than the maximum thickness T5 measured at the center of the fifth rib. Within the above-described range, the maximum thickness T6 measured at the center of the sixth rib can have a value smaller than the maximum thickness T5 measured at the center of the fifth rib.

[0481] The height of the small surface hole in the third through-hole VH3 of the deposition mask 100 can be about 0.2 times to about 0.4 times of the maximum thickness T5 and T6 measured at the center of the fifth and sixth ribs. Accordingly, the height of the small surface hole formed on the sixth rib can be different from the height of the small surface hole formed on the fifth rib. In detail, the height H6 of the small surface hole formed on the sixth rib can be smaller than the height H5 of the small surface hole formed on the fifth rib.

[0482] As an example, the maximum thickness measured at the center of the fifth rib or the sixth rib is about 7 μm to about 9 μm, and the height of the small surface hole located between one surface of the third through-hole of the deposition mask 100 and the communication portion is about 1.4 μm to about 3.5 μm.

[0483] The height H5 of the small surface hole located at the central portion of the fifth rib of the deposition mask 100 can be about 4.0 μm or less. The height H6 of the small surface hole located at the central portion of the sixth rib of the deposition mask 100 can be about 3.5 μm or less. Preferably, the height H5 of the small surface hole located in the central portion of the fifth rib of the third through-hole of the deposition mask 100 can be about 3.5 μm or less. The height H6 of the small surface hole located in the central portion of the sixth rib of the third through-hole of the deposition mask 100 can be about 2.5 μm or less.

[0484] Preferably, the height H5 of the small surface hole located in the central portion of the fifth rib can be about 0.1 μm to about 3.4 μm. The height H6 of the small surface hole located in the central portion of the sixth rib can be 0.1 μm to about 2.4 μm. For example, the height of the small surface hole V1 located at the central portion of the fifth rib of the deposition mask 100 can be about 0.5 μm to about 3.2 μm. For example, the height of the small surface hole V1 located at the central portion of the sixth rib of the deposition mask 100 can be about 0.5 μm to about 2.2 μm. For example, the height of the small surface hole located at the central portion of the fifth rib of the deposition mask 100 can be about 1 μm to about 3 μm. For example, the height of the small surface hole located at the central portion of the sixth rib of the deposition mask 100 can be about 1 μm to about 2 μm. Here, the height can be measured in the thickness measurement direction of the deposition mask 100, i.e., in the depth direction, and the height from one surface of the deposition mask 100 to the communication portion can be measured. When the height between one surface of the deposition mask 100 and the communication portion exceeds about 3.5 μm, deposition failure can occur due to a shadow effect in which the deposition material diffuses to an area larger than the area of the through hole during OLED deposition. Accordingly, the height of the small surface hole located at the central portion of the fifth rib is set to 3.5 μm or less, and the height of the small surface hole located at the central portion of the sixth rib is set to 3.0 μm or less.

[0485] In addition, on the central portion of the fifth rib, the cross-sectional inclined angle θ corresponding to the internal angle located between the virtual first straight line and the virtual fourth straight line, which connects one end E9 of the fifth secondary second etching surface ES2-5 of the large surface hole V2 and one end E10 of the communication portion, can be 45 degrees to 55 degrees. On the central portion of the sixth rib, the cross-sectional inclined angle θ corresponding to the internal angle located between the virtual first straight line and the virtual fifth straight line, which connects one end E11 of the sixth secondary second etching surface ES2-6 of the large surface hole V2 and one end E12 of the communication portion, can be 35 degrees to 45 degrees.

[0486] According to the embodiment, the large surface hole of the through hole has a first cross-sectional inclined angle in the longitudinal direction and a second cross-sectional inclined angle greater than the first cross-sectional inclined angle in the lateral direction, and the thickness of the rib arranged in the longitudinal direction can be increased by the difference between the first cross-sectional inclined angle and the second cross-sectional inclined angle, thereby being able to secure the rigidity of the deposition mask. In addition, since the rigidity of the deposition mask is secured, the length deformation can be minimized, and thus, the pattern deposition efficiency can be improved by increasing the uniformity of the shape of the mask pattern and the position of the through hole.

[0487] Additionally, according to the implementation, OLED pixel patterns can be uniformly deposited in all areas, regardless of the location of the vias, by reducing the tilt angle of the large surface apertures of the vias in a direction perpendicular to the moving direction of the organic deposition container.

[0488] The features, structures, effects, etc., described in the above embodiments are included in at least one embodiment of the present invention, but are not limited to only one embodiment. Furthermore, those skilled in the art can combine or modify the features, structures, and effects shown in each embodiment for other embodiments. Therefore, it should be understood that such combinations and modifications are included within the scope of the present invention.

[0489] Furthermore, the above description has focused on embodiments, but is merely illustrative and does not limit the invention. It will be apparent to those skilled in the art that various modifications and applications not shown above are possible without departing from the essential characteristics of these embodiments. For example, elements of the embodiments described herein can be modified and implemented. Moreover, it should be understood that differences relating to such variations and applications are included within the scope of the invention as defined in the appended claims.

Claims

1. A deposition mask comprising: a metal plate for deposition of an organic material of an organic light emitting diode pixel pattern; a plurality of small surface holes formed on one surface of the metal plate; a plurality of large surface holes formed on another surface opposite to the one surface of the metal plate; and a plurality of through holes communicating the small surface holes and the large surface holes; wherein a height in a cross section of the small surface hole in a longitudinal direction of the metal plate crossing a central portion of the small surface hole is less than a height in a cross section of the small surface hole in a lateral direction of the metal plate perpendicular to the longitudinal direction crossing the central portion of the small surface hole. the metal plate comprises a deposition area and a non-deposition area, 2. The deposition mask of claim 1, wherein, wherein the deposition area comprises: a plurality of effective portions spaced apart from each other; and a non-effective portion other than the effective portions. a height in a cross section of the small surface hole in the longitudinal direction of the metal plate is 0.1 μm to 2.4 μm, and 3. The deposition mask according to any of claims 1 to 2, wherein, wherein a height in a cross section of the small surface hole in the lateral direction of the metal plate is 0.1 μm to 3.4 μm. the longitudinal direction of the metal plate is a direction perpendicular to a moving direction of an organic material deposition container for the deposition of the organic material of the organic light emitting diode pixel pattern, and 4. The deposition mask according to any of claims 1 to 2, wherein, wherein the lateral direction is the moving direction of the organic material deposition container. a width in the longitudinal direction of the large surface hole on the another surface of the metal plate is greater than a width in the lateral direction of the large surface hole on the another surface of the metal plate.

5. The deposition mask of any of claims 1-2, wherein, 6.The deposition mask according to any one of claims 1 to 2, further comprising: an island portion positioned between a plurality of through holes spaced apart in a diagonal direction among the plurality of through holes; and wherein a width in the longitudinal direction of the island portion is different from a width in the lateral direction of the island portion. the width in the longitudinal direction of the island portion is greater than the width in the lateral direction of the island portion. 8.The deposition mask according to claim 1, further comprising:

7. The deposition mask of claim 6, wherein, a plurality of ribs provided between a plurality of the large surface holes or a plurality of the small surface holes, wherein the plurality of ribs comprises: a plurality of first ribs spaced apart from each other in the lateral direction of the metal plate; and a plurality of second ribs spaced apart from each other in the longitudinal direction of the metal plate, and wherein a thickness of a central portion of the first rib is different from a thickness of a central portion of the second rib. the thickness of the central portion of the first rib is greater than the thickness of the central portion of the second rib. the first rib is provided long in the longitudinal direction of the metal plate, and 9. The deposition mask of claim 8, wherein, wherein the second rib is provided long in the lateral direction of the metal plate.

10. The deposition mask of claim 8, wherein, ​ ​ 11. The deposition mask of claim 8, wherein, A first inclination angle at which one end and the other end of the large surface hole are connected with respect to the one surface in a cross section in the longitudinal direction of the metal plate is different from a second inclination angle at which one end and the other end of the large surface hole are connected with respect to the one surface in a cross section in the lateral direction of the metal plate.

12. The deposition mask of claim 11, wherein, Each of the first inclination angle and the second inclination angle has a range of 35° to 55°.

13. The deposition mask of claim 11, wherein, The first inclination angle is smaller than the second inclination angle.

14. The deposition mask of any one of claims 1, 2, 12, and 13, wherein, A spacing between centers of the plurality of through holes is 48 µm or less.

15. The deposition mask of claim 14, wherein, A diameter of the through hole in the longitudinal direction or in the lateral direction is 33 µm or less.

16. The deposition mask of claim 14, wherein, The through hole is a hole for depositing a green pixel pattern.

17. The deposition mask of any of claims 1-2, wherein, A difference between a width of the small surface hole in the longitudinal direction on the one surface of the metal plate and a width of the through hole is 0.01 µm to 1.1 µm.

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