Design Method and System of Bounded-Wave Electromagnetic Pulse Simulator

Abstract

An embodiment of the present invention provides a design method and system for a bounded-wave electromagnetic pulse simulator, belonging to the field of electromagnetic technology. The bounded-wave electromagnetic pulse simulator includes a pulse source, a front transition section, a parallel plate section, a rear transition section, and a terminal load along the x-axis. The method includes: obtaining the impedance matching value of the terminal load; obtaining the structural parameters of the bounded-wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map; and performing simulation construction of the bounded-wave electromagnetic pulse simulator based on the structural parameters, and correspondingly outputting a simulation construction scheme. The solution of the present invention realizes the idea of accurately inferring the structural parameters of the bounded-wave electromagnetic pulse simulator based on user requirements, and realizes the precise reproduction of the electromagnetic environment in the disconnector operation scenario.

Description

Technical Field

[0001] The present invention relates to the field of electromagnetic technology, and in particular, to a design method for a bounded-wave electromagnetic pulse simulator and a design system for a bounded-wave electromagnetic pulse simulator. Background Art

[0002] With the development of power equipment towards the direction of intelligence, in-situ and miniaturization, the distance between secondary power equipment and primary power equipment such as transformers and disconnectors is getting shorter and shorter. The electromagnetic environment where secondary equipment is located has become extremely complex, and higher requirements for the anti-electromagnetic interference of secondary equipment are also put forward. According to statistics, accidents of damage to secondary equipment in substations caused by disconnector operations occur frequently, causing heavy losses to the country's economic construction and the safety of people's lives and property. Therefore, it is of great research value to reproduce the electromagnetic environment in the disconnector operation scenario.

[0003] A bounded-wave electromagnetic pulse simulator is often used to reproduce a transient electric field with a relatively large amplitude. Its typical structure consists of a pulse source, a front transition section, a parallel plate section (transmission line), a rear transition section, and a terminal load. Usually, the geometric size of the pulse source is much smaller than the working interval composed of the parallel plate section, resulting in a conical front transition section, a rectangular middle parallel plate section, and a conical rear transition section at the tail connecting the parallel plate section and the terminal load. In the process of designing the structure of the simulator, in order to ensure that the electromagnetic wave excited by the pulse source propagates between each part without reflection and loss, it is required to achieve impedance matching of the terminal load. The existing methods are to first design the structural dimensions of the simulator according to the object to be measured and the size of the site space, and then perform impedance calculation to obtain the impedance matching value of the terminal load. However, in the actual use process, it is often necessary to design a corresponding bounded-wave electromagnetic pulse simulator based on the user's test requirements under the premise of the target impedance matching value. The existing methods obviously cannot meet the requirements. Based on this problem, a new design method for a bounded-wave electromagnetic pulse simulator is needed. Summary of the Invention

[0004] The purpose of the embodiments of the present invention is to provide a design method and system for a bounded-wave electromagnetic pulse simulator, so as to at least solve the problem that the existing methods cannot design a bounded-wave electromagnetic pulse simulator based on user requirements.

[0005] To achieve the above object, in the first aspect of the present invention, a design method for a bounded-wave electromagnetic pulse simulator is provided. The bounded-wave electromagnetic pulse simulator includes a pulse source, a front transition section, a parallel plate section, a rear transition section, and a terminal load along the x-axis. The method includes: obtaining the impedance matching value of the terminal load; obtaining the structural parameters of the bounded-wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map; and performing simulation construction of the bounded-wave electromagnetic pulse simulator based on the structural parameters, and correspondingly outputting a simulation construction plan.

[0006] Optionally, the structural parameters of the bounded-wave electromagnetic pulse simulator include: a first structural parameter α and a second structural parameter β; wherein, the first structural parameter α is the expansion angle of the front transition section of the bounded-wave electromagnetic pulse simulator along the x-axis; the second structural parameter β is the expansion angle of the front transition section of the bounded-wave electromagnetic pulse simulator along the z-axis.

[0007] Optionally, the method further includes: constructing a characteristic impedance curve, including: within the adjustable range of the impedance matching value, simulating and determining an impedance matching value; based on the impedance matching value, gradually adjusting the second structural parameter β within a preset adjustable range; for each completion of the adjustment of the second structural parameter β, based on the impedance matching value and the adjusted second structural parameter β, calculating the corresponding first structural parameter α; constructing the characteristic impedance curve with the adjusted second structural parameter β and the corresponding first structural parameter α.

[0008] Optionally, the method further includes: constructing a preset characteristic impedance map, including: for each obtained characteristic impedance curve, adjusting the impedance matching value within the adjustable range of the impedance matching value, and obtaining a corresponding characteristic impedance curve based on the adjusted impedance matching value; repeating the adjustment of the impedance matching value and the obtaining of the characteristic impedance curve until the adjustable range of the impedance matching value is traversed and adjusted, outputting the obtained multiple characteristic impedance curves; obtaining the characteristic impedance map based on all the obtained characteristic impedance curves.

[0009] Optionally, for each completion of the adjustment of the second structural parameter β, based on the impedance matching value and the adjusted second structural parameter β, calculating the corresponding first structural parameter α includes: obtaining elliptic integral characteristic parameters according to the impedance matching value and the adjusted second structural parameter β; based on the elliptic integral characteristic parameters, obtaining the calculation characteristic value of the first structural parameter α; based on the calculation characteristic value of the first structural parameter α, calculating the corresponding first structural parameter α; the calculation relationship is:

[0010]

[0011] wherein, α is the first structural parameter α; R is the calculation characteristic value of the first structural parameter α.

[0012] Optionally, the elliptic integral characteristic parameters include a characteristic value n and a characteristic value m; wherein, the calculation formula of the characteristic value m is:

[0013]

[0014] wherein, Z c is the impedance matching value; m1 = 1 - m is the complementary parameter of m; n0 is the intrinsic wave impedance of free space.

[0015] Optionally, the calculation formula for the eigenvalue n is:

[0016]

[0017] where sn is the Jacobian elliptic function, K(m) is the complete elliptic integral of the first kind.

[0018] Optionally, the expression for the complete elliptic integral of the first kind is:

[0019]

[0020] where, is the calculation intermediate value; where, is the incomplete elliptic integral of the first kind, and its expression is:

[0021]

[0022] Optionally, obtaining the calculation eigenvalue of the first structural parameter α based on the elliptic integral characteristic parameter includes: obtaining a first intermediate eigenvalue according to the elliptic integral characteristic parameter based on the calculation formula of the first intermediate eigenvalue; calculating a second intermediate eigenvalue based on the calculation formula of the second intermediate eigenvalue according to the first intermediate eigenvalue; calculating a third intermediate eigenvalue based on the calculation formula of the third intermediate eigenvalue according to the second intermediate eigenvalue; calculating the calculation eigenvalue of the first structural parameter α according to the calculation formula of the calculation eigenvalue of the first structural parameter α based on the third intermediate eigenvalue; where, the calculation formula of the first intermediate eigenvalue is:

[0023]

[0024] where A is the first intermediate eigenvalue; the calculation formula of the second intermediate eigenvalue is:

[0025]

[0026] where B is the second intermediate eigenvalue; the calculation formula of the third intermediate eigenvalue is:

[0027]

[0028] where G is the third intermediate eigenvalue; the calculation formula of the calculation eigenvalue of the first structural parameter α is:

[0029]

[0030] where, is the elliptic integral of the third kind.

[0031] Optionally, the expression for the elliptic integral of the third kind is:

[0032]

[0033] Optionally, obtaining the structural parameters of the bounded-wave electromagnetic pulse simulator based on the impedance matching value and the preset characteristic impedance map includes: retrieving the corresponding characteristic impedance curve in the preset characteristic impedance map according to the impedance matching value; based on the principle of material saving, finding the corresponding points of the first structural parameter α and the second structural parameter β in the retrieved characteristic impedance curve; determining the values of the corresponding first structural parameter α and the second structural parameter β based on the corresponding points; and taking the values of the first structural parameter α and the second structural parameter β as the structural parameters of the bounded-wave electromagnetic pulse simulator.

[0034] The second aspect of the present invention provides a design system for a bounded-wave electromagnetic pulse simulator. The system includes: an acquisition unit for obtaining the impedance matching value of the terminal load; a processing unit for obtaining the structural parameters of the bounded-wave electromagnetic pulse simulator based on the impedance matching value and the preset characteristic impedance map; and a simulation unit for performing a simulation construction of the bounded-wave electromagnetic pulse simulator based on the structural parameters and correspondingly outputting a simulation construction scheme.

[0035] Optionally, the processing unit is further configured to: construct a characteristic impedance curve, including: simulating and determining an impedance matching value within the adjustable range of the impedance matching value; gradually adjusting the second structural parameter β within the preset adjustable range based on the impedance matching value; for each completion of the adjustment of the second structural parameter β, calculating and obtaining the corresponding first structural parameter α based on the impedance matching value and the adjusted second structural parameter β; and constructing the characteristic impedance curve with the adjusted second structural parameter β and the corresponding first structural parameter α.

[0036] On the other hand, the present invention provides a computer-readable storage medium, on which instructions are stored, and when the instructions run on a computer, the computer is caused to execute the above-mentioned method for designing a bounded-wave electromagnetic pulse simulator.

[0037] Through the above technical solutions, on the premise of understanding the user's needs, a corresponding bounded-wave electromagnetic pulse simulator is designed based on the user's needs, the corresponding characteristic impedance map is matched through the specific impedance matching value, the structural parameters of the bounded-wave electromagnetic pulse simulator under the corresponding impedance matching value are found, and a corresponding construction scheme is generated based on the structural parameters. The finally obtained bounded-wave electromagnetic pulse simulator meets the user's use and has significant significance for accurately reproducing the electromagnetic environment in the disconnector operation scenario.

[0038] Other features and advantages of the embodiments of the present invention will be described in detail in the subsequent specific embodiment part. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The accompanying drawings are used to provide a further understanding of the embodiments of the present invention and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the embodiments of the present invention, but do not constitute a limitation to the embodiments of the present invention. In the accompanying drawings:

[0040] Figure 1 is a flowchart of the steps of a design method for a bounded-wave electromagnetic pulse simulator provided by an embodiment of the present invention;

[0041] Figure 2 is a flowchart of the steps of generating a characteristic impedance map provided by an embodiment of the present invention;

[0042] Figure 3 is a schematic structural diagram of a bounded-wave electromagnetic pulse simulator provided by an embodiment of the present invention;

[0043] Figure 4 is a schematic diagram of the structural parameters of a bounded-wave electromagnetic pulse simulator provided by an embodiment of the present invention;

[0044] Figure 5 is a schematic diagram of a characteristic impedance map provided by an embodiment of the present invention;

[0045] Figure 6 is a system structure diagram of a design system for a bounded-wave electromagnetic pulse simulator provided by an embodiment of the present invention. Specific Embodiments

[0046] The following will describe in detail the specific embodiments of the present invention with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention and are not used to limit the present invention.

[0047] With the development of power equipment towards the direction of intelligence, in-situ and miniaturization, the distance between secondary power equipment and primary power equipment such as transformers and disconnectors is getting shorter and shorter. The electromagnetic environment where secondary equipment is located has become extremely complex, and higher requirements for the anti-electromagnetic interference of secondary equipment are also put forward. According to statistics, accidents of damage to secondary equipment in substations caused by disconnector operations occur frequently, causing heavy losses to the country's economic construction and the safety of people's lives and property. Therefore, it has important research value to reproduce the electromagnetic environment in the disconnector operation scenario.

[0048] Such as Figure 3, the bounded-wave electromagnetic pulse simulator is often used to reproduce a transient electric field with a relatively large amplitude. Its typical structure consists of a pulse source, a front transition section, a parallel plate section (transmission line), a rear transition section, and a terminal load. Usually, the geometric size of the pulse source is much smaller than the working interval formed by the parallel plate section, resulting in a conical front transition section, a rectangular middle parallel plate section, and a conical rear transition section at the tail that connects the parallel plate section and the terminal load. During the structural design process of the simulator, to ensure that the electromagnetic wave excited by the pulse source propagates between each part without reflection and loss, impedance matching of the terminal load is required. The existing simulator design method is to first design the structural dimensions of the simulator according to the object under test and the size of the site space, and then perform impedance calculations to obtain the impedance matching value of the terminal load.

[0049] The present invention proposes a method for inversely calculating the first structural parameter α and the second structural parameter β of the simulator under the condition of a limited impedance matching value, carrying out the structural design of the simulator, and forming a two-dimensional impedance matching table with the first structural parameter α and the second structural parameter β as variables to assist engineers in quickly finding the impedance matching value of the terminal load. As Figure 4 shown, the first structural parameter α is the expansion angle of the front transition section of the bounded-wave electromagnetic pulse simulator along the x-axis; the second structural parameter β is the expansion angle of the front transition section phase of the bounded-wave electromagnetic pulse simulator along the z-axis.

[0050] Figure 6 is the system structure diagram of a bounded-wave electromagnetic pulse simulator design system provided by an embodiment of the present invention. As Figure 6 shown, the system includes: an acquisition unit for obtaining the impedance matching value of the terminal load; a processing unit for obtaining the structural parameters of the bounded-wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map; a simulation unit for performing simulation construction of the bounded-wave electromagnetic pulse simulator based on the structural parameters and correspondingly outputting a simulation construction plan.

[0051] Optionally, the processing unit is further configured to: construct a characteristic impedance curve, including: simulating and determining an impedance matching value within the adjustable range of the impedance matching value; gradually adjusting the second structural parameter β within the preset adjustable range based on the impedance matching value; for each adjustment of the second structural parameter β, calculating and obtaining the corresponding first structural parameter α based on the impedance matching value and the adjusted second structural parameter β; constructing the characteristic impedance curve with the adjusted second structural parameter β and the corresponding first structural parameter α.

[0052] Figure 1 is the method flow chart of a bounded-wave electromagnetic pulse simulator design method provided by an embodiment of the present invention. As Figure 1 shown, the method includes:

[0053] Step S10: Obtain the impedance matching value of the load of the terminal to be measured.

[0054] Specifically, for the existing bounded-wave electromagnetic pulse simulator, the structural dimensions are first designed according to the object to be measured and the size of the site space, and then the impedance calculation is performed to obtain the impedance matching value of the terminal load. This design method cannot meet the simulator design with restricted conditions for the impedance matching value. For the simulator design with special requirements for the impedance matching value in the present invention, the values of the first structural parameter α and the second structural parameter β of the bounded-wave electromagnetic pulse simulator are calculated in reverse through the known impedance matching value, so as to guide the design of the structural dimensions of the simulator. Based on this, the solution of the present invention is for the simulator design with special requirements for the impedance matching value. Therefore, it is necessary to first obtain the impedance matching value of this special requirement. The required impedance matching value can be the impedance matching value of the simulation device, or the impedance matching value of the real terminal load, or even the impedance matching value required by the user. As long as it is a determined impedance matching value, an applicable bounded-wave electromagnetic pulse simulator can be specified based on this known impedance matching value.

[0055] Step S20: Obtain the structural parameters of the bounded-wave electromagnetic pulse simulator based on the impedance matching value and the preset characteristic impedance map.

[0056] Specifically, as Figure 4 , when constructing a bounded-wave electromagnetic pulse simulator, there are two main structural parameters, which are directly related to the working performance of the bounded-wave electromagnetic pulse simulator, namely the first structural parameter α and the second structural parameter β. Among them, the first structural parameter α is the expansion angle of the front transition section of the bounded-wave electromagnetic pulse simulator along the x-axis; the second structural parameter β is the expansion angle of the front transition section phase of the bounded-wave electromagnetic pulse simulator along the z-axis. The solution of the present invention performs reverse inference on the result parameters based on the determined impedance matching value, that is, it is necessary to infer and obtain the first structural parameter α and the second structural parameter β, and determine the corresponding first structural parameter α and the second structural parameter β corresponding to each impedance matching value. In the solution of the present invention, mainly by comparing the determined impedance matching value with the preset characteristic impedance map, the corresponding curves of the first structural parameter α and the second structural parameter β under the corresponding values are found, and then the best construction determination rule is selected, for example, determining the corresponding first structural parameter α and the second structural parameter β on the premise of using less material. Here, the characteristic impedance map is a preset rule. When used later, only by referring to this preset rule can the corresponding characteristic curve be quickly extracted. For the convenience of the solution, the present invention first needs to formulate this preset rule, that is, obtain this preset characteristic impedance map. Specifically, as Figure 2 , it includes the following steps:

[0057] Step S201: Construct the first characteristic impedance curve.

[0058] Specifically, in the preset characteristic impedance map, there are multiple characteristic impedance curves. Each characteristic curve represents the corresponding relationship between the first structural parameter α and the second structural parameter β under a determined impedance matching value. Therefore, when forming the characteristic impedance map, it is necessary to obtain all the characteristic impedance curves separately and then integrate all the characteristic impedance curves to obtain the corresponding characteristic impedance map. Therefore, based on the common usage rules, determine the adjustable range of the impedance matching value, and then adjust the impedance matching value step by step within this range. After each adjustment, obtain the characteristic impedance curve corresponding to the impedance matching value.

[0059] Determine the first impedance matching value within the adjustable range of the first characteristic impedance matching value. Preferably, this first impedance matching value is the maximum or minimum value of the adjustable range, so as to facilitate subsequent step-by-step reduction or increase of the impedance matching value and avoid omission. After determining the first impedance matching value, based on this impedance matching value, adjust the second structural parameter β step by step within the preset adjustable range. After each adjustment of the second structural parameter β, calculate the corresponding first structural parameter α based on the impedance matching value and the adjusted second structural parameter β, so as to obtain the corresponding relationship between multiple second structural parameters β and multiple first structural parameters α, and construct the characteristic impedance curve with the adjusted second structural parameter β and the corresponding first structural parameter α.

[0060] The steps of calculating the corresponding first structural parameter α based on the impedance matching value and the second structural parameter β adjusted at each level include: obtaining the elliptic integral characteristic parameter according to the impedance matching value and the adjusted second structural parameter β; obtaining the calculated eigenvalue of the first structural parameter α based on the elliptic characteristic parameter; calculating the corresponding first structural parameter α based on the calculated eigenvalue of the first structural parameter α; where the calculation relationship is:

[0061]

[0062] Among them, α is the first structural parameter α; R is the calculated eigenvalue of the first structural parameter α. The elliptic integral characteristic parameter includes eigenvalue n and eigenvalue m; where the calculation formula for eigenvalue m is:

[0063]

[0064] Among them, Z c is the impedance matching value; m1 = 1 - m is the complementary parameter of m; n0 is the intrinsic wave impedance of free space, which often takes the value of 376.7Ω. The calculation formula for eigenvalue n is:

[0065]

[0066] Among them, sn is the Jacobian elliptic function K(m) is the first kind of complete elliptic integral. The expression of the first kind of complete elliptic integral is:

[0067]

[0068] where, is the calculation intermediate value; where, is the first kind of incomplete elliptic integral, and its expression is:

[0069] Specifically, obtaining the calculation eigenvalue of the first structure parameter α based on the elliptical characteristic parameter includes: obtaining the first intermediate eigenvalue according to the elliptical characteristic parameter based on the calculation formula of the first intermediate eigenvalue; calculating and obtaining the second intermediate eigenvalue according to the first intermediate eigenvalue based on the calculation formula of the second intermediate eigenvalue; calculating and obtaining the third intermediate eigenvalue according to the second intermediate eigenvalue based on the calculation formula of the third intermediate eigenvalue; calculating and obtaining the calculation eigenvalue of the first structure parameter α according to the three intermediate eigenvalues based on the calculation formula of the calculation eigenvalue of the first structure parameter α; where, the calculation formula of the first intermediate eigenvalue is:

[0070]

[0071] where, A is the first intermediate eigenvalue; the calculation formula of the second intermediate eigenvalue is:

[0072]

[0073] where, B is the second intermediate eigenvalue; the calculation formula of the third intermediate eigenvalue is:

[0074]

[0075] where, G is the third intermediate eigenvalue; the calculation formula of the calculation eigenvalue of the first structure parameter α is:

[0076]

[0077] where, is the third kind of elliptic integral, and its expression is:

[0078]

[0079] Step S202: Within the adjustable range of the impedance matching value, correct the first impedance matching value, and determine a new characteristic impedance curve based on the corrected impedance matching value.

[0080] Specifically, after the construction of the first characteristic impedance curve is completed, the value of the impedance matching is changed. On the premise of this new impedance matching value, the step of calculating the corresponding relationship between the second structural parameter β and the first structural parameter α in step S201 is executed again to obtain a new characteristic impedance curve.

[0081] Step S203: Complete the traversal correction of the adjustable range of the impedance matching value to obtain the characteristic impedance curves corresponding to all impedance matching correction values.

[0082] Specifically, repeat step S202 until the adjustable range of the impedance matching value is traversed to obtain the characteristic impedance curves under each adjustment value. For example, if there are 100 levels of preset adjustments, 100 characteristic impedance curves can be obtained correspondingly.

[0083] Step S204: Integrate all the characteristic impedance curves to obtain a characteristic impedance map.

[0084] Specifically, as Figure 5 , in one implementation, with the first structural parameter α as the abscissa and the second structural parameter β as the ordinate, all the characteristic impedance curves are integrated into the same two-dimensional coordinate system. There are multiple characteristic impedance curves in this coordinate system, and each characteristic impedance curve corresponds to the characteristic impedance curve of an impedance matching value. This integrated two-dimensional coordinate system is used as the characteristic impedance map.

[0085] After the characteristic impedance map is completed, first perform a matching search in the corresponding characteristic impedance map based on the impedance matching value obtained in step S10 to find the characteristic impedance curve corresponding to this impedance matching value. Extract the corresponding characteristic impedance curve. There are multiple corresponding points of the first structural parameter α and the second structural parameter β on this characteristic curve. In theory, any point on this curve can meet the user's requirements. However, for the sake of construction economy, the construction materials for different expansion angle requirements may be different. Therefore, in order to find the most optimal solution, preferably, after the characteristic impedance curve is extracted, the processing unit performs a bounded-wave electromagnetic pulse simulator simulation construction based on each characteristic point and obtains the consumable material amount under each construction result respectively. Finally, the characteristic point with the smallest consumable material amount is selected, and the corresponding first structural parameter α and second structural parameter β of this characteristic point are obtained as the structural parameters of the bounded-wave electromagnetic pulse simulator.

[0086] Step S30: Perform a simulation construction of the bounded-wave electromagnetic pulse simulator based on the structural parameters and output the corresponding simulation construction plan.

[0087] Specifically, to facilitate subsequent rapid construction of a bounded-wave electromagnetic pulse simulator by relevant personnel based on the output structure parameters, preferably, the processing unit performs simulation construction of the bounded-wave electromagnetic pulse simulator based on the determined first structure parameter α and second structure parameter β. This simulation construction process includes the complete construction process of the bounded-wave electromagnetic pulse simulator. The simulation unit records in detail the parameters of the construction process for relevant personnel to use as a reference during subsequent construction. After completing the simulation construction, the simulation unit organizes the simulation process into a construction plan for output.

[0088] In the embodiments of the present invention, the solution of the present invention is different from the existing method of calculating the corresponding impedance matching value based on a built bounded-wave electromagnetic pulse simulator. There is a mature calculation method for this calculation process. Only by collecting the structure parameters of the built bounded-wave electromagnetic pulse simulator can the corresponding impedance matching value be accurately calculated. However, the solution of the present invention is based on the design requirements of the bounded-wave electromagnetic pulse simulator. In the design stage, the structure parameters of the bounded-wave electromagnetic pulse simulator are unknown, and the only known value is the user's required impedance matching value. To accurately conduct simulation experiments, the designed and built bounded-wave electromagnetic pulse simulator needs to meet the user's requirements, that is, it is necessary to perform reverse inference on the structure parameters of the bounded-wave electromagnetic pulse simulator based on the impedance matching value provided by the user to obtain a bounded-wave electromagnetic pulse simulator that can generate the corresponding impedance matching value. The solution of the present invention can accurately reproduce the electromagnetic environment in the disconnector operation scenario.

[0089] The embodiments of the present invention also provide a computer-readable storage medium. Instructions are stored on this computer-readable storage medium, and when running on a computer, they cause the computer to execute the above-mentioned bounded-wave electromagnetic pulse simulator design method.

[0090] Those skilled in the art can understand that all or part of the steps in the methods of the above embodiments can be completed by instructing relevant hardware through a program. This program is stored in a storage medium and includes several instructions to cause a single-chip microcomputer, chip, or processor to execute all or part of the steps of the methods described in various embodiments of the present invention. The aforementioned storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), magnetic disks, or optical discs that can store program codes.

[0091] The optional embodiments of the present invention have been described in detail above in conjunction with the accompanying drawings. However, the embodiments of the present invention are not limited to the specific details in the above embodiments. Within the scope of the technical concept of the embodiments of the present invention, various simple modifications can be made to the technical solutions of the embodiments of the present invention, and these simple modifications all fall within the protection scope of the embodiments of the present invention. Additionally, it should be noted that in the above specific embodiments, the various specific technical features described can be combined in any suitable manner without conflict. To avoid unnecessary repetition, the embodiments of the present invention will not separately describe various possible combination methods.

[0092] In addition, any combination can be made among the various different embodiments of the present invention as long as it does not violate the idea of the embodiments of the present invention, and it should also be regarded as the content disclosed by the embodiments of the present invention.

Claims

1. A design method of a bounded-wave electromagnetic pulse simulator, the bounded-wave electromagnetic pulse simulator includes a pulse source, a front transition section, a parallel plate section, a rear transition section, and a terminal load along the x-axis direction, and is characterized in that, The method includes: Obtaining the impedance matching value of the terminal load; Based on the impedance matching value and a preset characteristic impedance map, obtaining the structural parameters of the bounded-wave electromagnetic pulse simulator; wherein, The structural parameters of the bounded-wave electromagnetic pulse simulator include: a first structural parameter α and a second structural parameter β; wherein, the first structural parameter α is the expansion angle of the front transition section of the bounded-wave electromagnetic pulse simulator along the x-axis; the second structural parameter β is the expansion angle of the front transition section of the bounded-wave electromagnetic pulse simulator along the z-axis; The construction of the preset characteristic impedance map includes: within the adjustable range of the impedance matching value, simulating and determining an impedance matching value; based on the impedance matching value, gradually adjusting the second structural parameter β within a preset adjustable range; every time the adjustment of the second structural parameter β is completed, based on the impedance matching value and the adjusted second structural parameter β, calculating and obtaining the corresponding first structural parameter α; constructing a characteristic impedance curve with the adjusted second structural parameter β and the corresponding first structural parameter α; every time a characteristic impedance curve is obtained, correcting the impedance matching value within the adjustable range of the impedance matching value, and obtaining a corresponding characteristic impedance curve based on the corrected impedance matching value; repeating the correction of the impedance matching value and the obtaining of the characteristic impedance curve until the adjustable range of the impedance matching value is traversed and adjusted, and outputting the obtained multiple characteristic impedance curves; based on all the obtained characteristic impedance curves, obtaining the preset characteristic impedance map; According to the impedance matching value, retrieving the corresponding characteristic impedance curve in the preset characteristic impedance map; based on the principle of the most material-saving, finding the corresponding points of the first structural parameter α and the second structural parameter β in the retrieved characteristic impedance curve; based on the corresponding points, determining the values of the corresponding first structural parameter α and the second structural parameter β; taking the values of the first structural parameter α and the second structural parameter β as the structural parameters of the bounded-wave electromagnetic pulse simulator.

2. The method according to claim 1, characterized in that Every time the adjustment of the second structural parameter β is completed, based on the impedance matching value and the adjusted second structural parameter β, calculating and obtaining the corresponding first structural parameter α, including: Obtaining elliptic integral characteristic parameters according to the impedance matching value and the adjusted second structural parameter β; Based on the elliptic integral characteristic parameters, obtaining the calculation characteristic value of the first structural parameter α; Based on the calculation characteristic value of the first structural parameter α, calculating and obtaining the corresponding first structural parameter α; the calculation relationship is: Among them, is the first structural parameter α; The calculated eigenvalue for the first structural parameter α.

3. The method according to claim 2, wherein The elliptic integral characteristic parameters include a characteristic value n and a characteristic value m; Wherein, the calculation formula of the characteristic value m is: Among them, is the impedance matching value; is a complementary parameter of m; is the intrinsic wave impedance of free space; The first kind of complete elliptic integral of m1; The first kind of elliptic integral of m.

4. The method according to claim 3, characterized in that, The calculation formula of the characteristic value n is: wherein, is the Jacobian elliptic function, ; is the first kind of complete elliptic integral; To calculate the intermediate value; The upper limit of integration of the first kind of complete elliptic integral of m.

5. The method according to claim 4, characterized in that, The expression of the first kind of complete elliptic integral is: Among them, is for calculating the intermediate value; is the independent variable; among them, is the first kind of incomplete elliptic integral, and its expression is: 。 6. The method according to claim 2, characterized in that The obtaining of the calculation characteristic value of the first structural parameter α based on the elliptic integral characteristic parameters includes: Based on the calculation formula of the first intermediate characteristic value, obtaining the first intermediate characteristic value according to the elliptic integral characteristic parameters; Based on the calculation formula of the second intermediate characteristic value, calculating and obtaining the second intermediate characteristic value according to the first intermediate characteristic value; Based on the calculation formula of the third intermediate characteristic value, calculating and obtaining the third intermediate characteristic value according to the second intermediate characteristic value; The calculation formula for calculating the eigenvalue based on the first structural parameter α, and the calculated eigenvalue of the first structural parameter α is obtained according to the third intermediate eigenvalue; wherein, The calculation formula for the first intermediate eigenvalue is: where A is the first intermediate eigenvalue; The calculation formula for the second intermediate eigenvalue is: where B is the second intermediate eigenvalue; The calculation formula for the third intermediate eigenvalue is: where G is the third intermediate eigenvalue; The calculation formula for the calculated eigenvalue of the first structural parameter α is: Among them, is the third kind of elliptic integral.

7. The method according to claim 6, wherein The expression for the third kind of elliptic integral is: 。 8. A bounded wave electromagnetic pulse simulator design system, characterized in that, The system includes: An acquisition unit for obtaining the impedance matching value of the terminal load; A processing unit for obtaining the structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map; wherein, The structural parameters of the bounded wave electromagnetic pulse simulator include: a first structural parameter α and a second structural parameter β; wherein, the first structural parameter α is the expansion angle of the front transition section of the bounded wave electromagnetic pulse simulator along the x-axis; the second structural parameter β is the expansion angle of the front transition section of the bounded wave electromagnetic pulse simulator along the z-axis; The processing unit is further configured to construct a preset characteristic impedance map, including: simulating and determining an impedance matching value within the adjustable range of the impedance matching value; based on the impedance matching value, gradually adjusting the second structural parameter β within the preset adjustable range; every time the adjustment of the second structural parameter β is completed, calculating the corresponding first structural parameter α based on the impedance matching value and the adjusted second structural parameter β; constructing a characteristic impedance curve with the adjusted second structural parameter β and the corresponding first structural parameter α; For each obtained characteristic impedance curve, correcting the impedance matching value within the adjustable range of the impedance matching value, and obtaining a corresponding characteristic impedance curve based on the corrected impedance matching value; repeating the correction of the impedance matching value and the obtaining of the characteristic impedance curve until the adjustable range of the impedance matching value is traversed and adjusted, and outputting the obtained multiple characteristic impedance curves; obtaining the preset characteristic impedance map based on all the obtained characteristic impedance curves; A simulation unit for retrieving the corresponding characteristic impedance curve in the preset characteristic impedance map according to the impedance matching value; based on the principle of the most material-saving, finding the corresponding points of the first structural parameter α and the second structural parameter β in the retrieved characteristic impedance curve; based on the corresponding points, determining the values of the corresponding first structural parameter α and the second structural parameter β; taking the values of the first structural parameter α and the second structural parameter β as the structural parameters of the bounded wave electromagnetic pulse simulator.

9. A computer-readable storage medium, on which instructions are stored, and when the instructions run on a computer, the computer is caused to execute the bounded wave electromagnetic pulse simulator design method according to any one of claims 1-7.

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