Photoelectric detection devices

Abstract

The present invention provides a photodetector, belonging to the field of optoelectronic technology. It includes a transparent substrate, a conductive anode, a hole transport layer, a perovskite control layer, a visible light sensitive layer, an electron transport layer and a metal cathode, wherein the material of the perovskite control layer is (F‑NH3I)2PbI2, and the structure of F‑NH3I is: #imgabs0# The perovskite control layer can absorb light waves in the ultraviolet band, and the visible light sensitive layer can absorb light waves of 500nm‑730nm. The photodetector of the present invention utilizes the perovskite control layer to absorb light in the short-wave band, and utilizes the visible light sensitive layer to absorb light in the strong-wave band, so that only blue light and red light photons are converted into electrons and output circuits, realizing the dual-band response of the photodetector. At the same time, the photodetector of the present invention is a "sandwich" structure, which has the advantages of simple preparation process and low cost.

Description

Technical Field

[0001] The invention relates to a photoelectric detection device, belonging to the technical field of optoelectronics. Background Art

[0002] Photoelectric detection devices are sensors that can achieve photoelectric conversion using materials with photoelectric effect. Traditional photodetectors are made of semiconductor materials such as Si and Ge. Their manufacturing process is complex, the cost is high, and they are not suitable for large-area devices. Since materials such as perovskites and polymers have the characteristics of high light sensitivity, light weight, low price, and excellent processing performance, it is easier to prepare small-volume, low-power, and low-cost detection devices, which makes up for the shortcomings of expensive equipment and complex processes that are common in traditional inorganic photodetectors. The wide variety of perovskite and polymer semiconductor materials also provides a lot of options for the development and innovation of photoelectric detection devices. New materials with corresponding photoelectric properties can be synthesized as needed. Therefore, photoelectric detection devices will have greater research space and commercial value, such as applications in astronomy, environmental monitoring, spectroscopy, and medical detection instruments.

[0003] Most photodetectors have strong spectral selectivity due to the specific band gap of photoelectric materials, that is, different photodetectors respond to light of different wavelengths, for example, ultraviolet detectors that respond to ultraviolet light, visible light detectors that respond to visible light, infrared sensors that respond to infrared light, etc. These photodetectors are applicable to a limited spectral range and have a single spectral response range, which limits the scope of application. In particular, detectors used for image sensing require the use of multiple photodetectors in different spectral bands at the same time, resulting in cumbersome operation and complex structure.

[0004] In view of this, it is indeed necessary to propose a photoelectric detection device to solve the above problems. Summary of the invention

[0005] The object of the present invention is to provide a photoelectric detection device to solve the shortcomings of the existing photoelectric detection devices, such as single function and low integration.

[0006] To achieve the above object, the present invention provides a photodetector device, comprising a transparent substrate, a conductive anode, a hole transport layer, a perovskite control layer, a visible light sensitive layer, an electron transport layer and a metal cathode, wherein the material of the perovskite control layer is (F-NH3I)2PbI2, and the structure of F-NH3I is: The perovskite regulating layer can absorb light waves in the ultraviolet band, and the visible light sensitive layer can absorb light waves in the range of 500nm-730nm.

[0007] As a further improvement of the present invention, the visible light sensitive layer comprises a donor material and an acceptor material, the mass percentage of the donor material is 50-60%, and the mass percentage of the acceptor material is 40%-50%.

[0008] As a further improvement of the present invention, the donor material is one or more of PBDTTT-EFT and PPDT2FBT, wherein the structure of PBDTTT-EFT is: The structure of PPDT2FBT is:

[0009] As a further improvement of the present invention, the receptor material is PNNT, and the structural formula of PNNT is:

[0010] As a further improvement of the present invention, the material of the transparent substrate is any one or more of glass, transparent polymer flexible material and biodegradable flexible material; the transparent polymer flexible material is one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, chloroacetic acid resin and polyacrylic acid.

[0011] As a further improvement of the present invention, the material of the conductive anode is any one or more of indium tin oxide, graphene and carbon nanotubes.

[0012] As a further improvement of the present invention, the material of the hole transport layer is any one or more of molybdenum trioxide, PEDOT:PSS, CuI, CuSCN, CuPc, NiO, P3HT, Spiro-OMeTAD and PTAA.

[0013] As a further improvement of the present invention, the electron transport layer material is any one or more of TiO2, ZnO, PCBM, ICBA, Bis-C60, PFN and BCP.

[0014] As a further improvement of the present invention, the material of the metal cathode layer is a metal film or an alloy film, the metal film is any one of lithium, magnesium, calcium, strontium, aluminum and indium, and the alloy film is an alloy film made of any one of lithium, magnesium, calcium, strontium, aluminum and indium and any one of copper, gold and silver.

[0015] As a further improvement of the present invention, the thickness of the perovskite regulating layer is 250nm~300nm, the thickness of the visible light sensitive layer is 1μm~2μm, the thickness of the hole transport layer is 10nm, the thickness of the electron transport layer is 10nm, and the thickness of the metal cathode layer is 100nm.

[0016] The beneficial effects of the present invention are as follows: the photoelectric detection device of the present invention utilizes the perovskite regulating layer to absorb light in the short-wave band, and utilizes the visible light sensitive layer to absorb light in the strong-wave band, so that only blue light and red light photons are converted into electrons and output to the circuit, thereby realizing the dual-band response of the photoelectric detection device. At the same time, the photoelectric detection device of the present invention is a "sandwich" structure, which has the advantages of simple preparation process and low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic structural diagram of a photoelectric detection device according to a preferred embodiment of the present invention.

[0018] Figure 2 This is a spectral response diagram of the perovskite regulation layer in the present invention.

[0019] Figure 3 It is the spectral response diagram of the visible light sensitive layer in the present invention.

[0020] Figure 4 It is a spectrum response diagram of the photoelectric detection device in the present invention. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention is described in detail below with reference to the accompanying drawings and specific embodiments.

[0022] See also Figure 1 As shown, the present invention discloses a photoelectric detection device, including a transparent substrate 1, a conductive anode 2, a hole transport layer 3, a perovskite regulation layer 4, a visible light sensitive layer 5, an electron transport layer 6 and a metal cathode 7 arranged in sequence from bottom to top.

[0023] Specifically, the material of the transparent substrate 1 is any one or more of glass, transparent polymer flexible material and biodegradable flexible material; wherein the transparent polymer flexible material includes any one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, chloroacetic acid resin and polyacrylic acid.

[0024] The material of the conductive anode 2 is any one or more of indium tin oxide (ITO), graphene and carbon nanotube.

[0025] The material of the hole transport layer 3 is any one or more of molybdenum trioxide, PEDOT:PSS, CuI, CuSCN, CuPc, NiO, P3HT, Spiro-OMeTAD and PTAA. Preferably, the thickness of the hole transport layer 3 is 10 nm.

[0026] The molecular formula of the material of the perovskite control layer 4 is (F-NH3I)2PbI2, wherein the structural formula of F-NH3I is Preferably, the thickness of the perovskite regulating layer is 250nm to 300nm. This setting, on the one hand, prevents the inability to completely filter the ultraviolet light waves due to the perovskite regulating layer being too thin, and on the other hand, avoids the complicated preparation and increased cost due to the perovskite regulating layer being too thick. The perovskite regulating layer is within the thickness range of 250nm to 300nm, which can not only filter the ultraviolet light waves well, but also reduce the preparation cost. Of course, in other embodiments, the thickness of the perovskite regulating layer can also be enlarged or reduced according to actual conditions.

[0027] See also Figure 2 As shown, the perovskite regulation layer 4 has a strong absorption peak for light waves less than 400nm, that is, the perovskite regulation layer can effectively absorb short light bands, but has weak absorption for bands around 450nm.

[0028] The material of the visible light sensitive layer 5 is composed of a full polymer donor material and an acceptor material. Specifically, the donor material is any one or a combination of polymers PBDTTT-EFT and PPDT2FBT, wherein the molecular structure of PBDTTT-EFT is: The molecular structure of PPDT2FBT is The receptor material is polymer PNNT, and the molecular structure is During the preparation process, the acceptor material and the donor material can be successively evaporated or spin-coated on the perovskite regulating layer 4, or the acceptor material and the donor material can be first mixed and then evaporated or spin-coated on the perovskite regulating layer, which is not limited by the present invention.

[0029] See also Figure 3 As shown, the visible light sensitive layer 5 has a strong absorption peak between greater than 500nm and less than 730nm, that is, the visible light sensitive layer can effectively absorb light waves from 500nm to 730nm, so that photons less than 500nm and greater than 730nm can pass through the visible light sensitive layer.

[0030] The mass percentages of the donor material and the acceptor material are: 50-60% of the donor material, 40%-50% of the acceptor material; preferably, the thickness of the visible light sensitive layer 5 is 1 μm-2 μm.

[0031] The material of the electron transport layer 6 is any one or more of TiO2, ZnO, PCBM, ICBA, Bis-C60, PFN, and BCP. Preferably, the thickness of the electron transport layer 6 is 10 nm.

[0032] The material of the metal cathode 7 is a metal film or an alloy film. The metal film can be a metal film of lithium, magnesium, calcium, strontium, aluminum, indium, etc., or an alloy film of them with copper, gold, silver, etc. Preferably, the thickness of the metal cathode is 100nm.

[0033] See also Figure 4 As shown, the normalized response values ​​of the photodetector device near 450nm and 750nm are relatively high, that is, the photodetector device has a relatively strong response to the blue light band near 450nm and the red light band near 750nm, but has a relatively poor response to light waves in other bands. In other words, the photodetector device of the present invention can achieve dual-band response.

[0034] The following are specific embodiments of the photoelectric detection device in the present invention:

[0035] Embodiment 1:

[0036] The substrate composed of a transparent substrate and a conductive anode ITO was cleaned and dried with nitrogen after cleaning; molybdenum trioxide was evaporated on the surface of the conductive anode ITO to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 was prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 was 1.2 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 250nm, and it was baked at 120°C for 15 minutes; spin-coated on the perovskite control layer The visible light sensitive layer PBDTTT-EFT: PNNT (50%: 50%; 25mg / ml; 300rpm; 1μm) was prepared by mixing PBDTTT-EFT and PNNT at a mass ratio of 50%: 50% to prepare a 25mg / ml solution, and the spin coating speed was 300rpm. The thickness of the formed visible light sensitive layer was 1.5μm; a 10nm thick electron transport layer ZnO was prepared on the surface of the visible light sensitive layer by evaporation; and a metal anode Ag with a thickness of 100nm was evaporated on the electron transport layer. Under standard test conditions, that is, under -1V and visible light illumination, the responsivity of the photodetector at a wavelength of 450nm was measured to be 0.3A / W; the responsivity at a wavelength of 750nm was 0.65A / W.

[0037] Embodiment 2:

[0038] The substrate composed of a transparent substrate and a conductive anode ITO / Graphene was cleaned and dried with nitrogen after cleaning; PEDOT:PSS was spin-coated on the surface of the conductive anode ITO / Graphene to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 was prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 was 1.4 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 280 nm, and the layer was baked at 120°C for 15 minutes; A visible light sensitive layer PBDTTT-EFT: PNNT (60%: 40%; 26 mg / ml; 300 rpm; 1.5 μm) was prepared on the perovskite control layer by spin coating, that is, PBDTTT-EFT and PNNT were mixed at a mass ratio of 60%: 40% to prepare a 26 mg / ml solution, the spin coating speed was 300 rpm, and the thickness of the formed visible light sensitive layer was 1.5 μm; a 10 nm thick electron transport layer PCBM was spin coated on the surface of the visible light sensitive layer, and a metal anode Al with a thickness of 100 nm was evaporated on the electron transport layer. Under standard test conditions: that is, under -1 V and visible light illumination, the responsivity of the photodetector at a wavelength of 450 nm was measured to be 0.43 A / W; the responsivity at a wavelength of 750 nm was 0.8 A / W.

[0039] Embodiment 3:

[0040] The substrate composed of a transparent substrate and a conductive anode ITO is cleaned and dried with nitrogen after cleaning; PTAA is spin-coated on the surface of the conductive anode ITO to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 is prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 is 1.6 mol / L, the spin coating speed is 1000 rpm / 60s, the thickness of the formed perovskite control layer is 300 nm, and it is baked at 120°C for 15 minutes; spin-coated on the perovskite control layer The visible light sensitive layer PBDTTT-EFT: PNNT (50%: 50%; 30 mg / ml; 300 rpm; 2 μm) was prepared by the following method: PBDTTT-EFT and PNNT were mixed at a mass ratio of 50%: 50% to prepare a 25 mg / ml solution, and the spin coating speed was 300 rpm. The thickness of the formed visible light sensitive layer was 2 μm; a 10 nm thick electron transport layer ICBA was prepared on the surface of the visible light sensitive layer by spin coating, and a metal anode Cu with a thickness of 100 nm was evaporated on the electron transport layer. Under standard test conditions, i.e., under -1 V and visible light illumination, the responsivity of the photodetector at a wavelength of 450 nm was measured to be 0.5 A / W; and the responsivity at a wavelength of 750 nm was 0.92 A / W.

[0041] Embodiment 4:

[0042] The substrate composed of a transparent substrate and a conductive anode Graphene was cleaned and dried with nitrogen after cleaning; P3HT was spin-coated on the surface of the conductive anode Graphene to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 was prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 was 1.5 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 300 nm, and it was baked at 120°C for 15 minutes; The visible light sensitive layer PBDTTT-EFT:PNNT (55%:45%; 25mg / ml; 250rpm; 1.8μm) was prepared by spin coating, that is, PBDTTT-EFT and PNNT were mixed at a mass ratio of 55%:45% to prepare a 25mg / ml solution, the spin coating speed was 250rpm, and the thickness of the formed visible light sensitive layer was 1.8μm; a 10nm thick electron transport layer Bis-C60 / BCP was spin coated on the surface of the visible light sensitive layer, and a metal anode Cu with a thickness of 100nm was evaporated on the electron transport layer. Under standard test conditions, that is, under -1V and visible light illumination, the responsivity of the photodetector at a wavelength of 450nm was measured to be 0.65A / W; the responsivity at a wavelength of 750nm was 0.86A / W.

[0043] Embodiment 5:

[0044] The substrate composed of a transparent substrate and a conductive anode ITO was cleaned and dried with nitrogen after cleaning; a hole transport layer was prepared by evaporating molybdenum trioxide on the surface of the conductive anode ITO; a perovskite control layer (F-NH3I)2PbI2 was prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 was 1.2 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 250nm, and it was baked at 120°C for 15 minutes; The visible light sensitive layer PPDT2FBT:PNNT (50%:50%; 25mg / ml; 300rpm; 1μm) was prepared by spin coating, that is, PPDT2FBT and PNNT were mixed at a mass ratio of 50%:50% to prepare a 25mg / ml solution, the spin coating speed was 300rpm, and the thickness of the formed visible light sensitive layer was 1.0μm; an electron transport layer ZnO with a thickness of 10nm was prepared by evaporation on the surface of the visible light sensitive layer, and a metal anode Ag with a thickness of 100nm was evaporated on the electron transport layer. Under standard test conditions, that is, under -1V and visible light illumination, the responsivity of the photodetector at a wavelength of 450nm was measured to be 0.4A / W; the responsivity at a wavelength of 750nm was 0.78A / W.

[0045] Embodiment 6:

[0046] The substrate composed of a transparent substrate and a conductive anode ITO / Graphene was cleaned and dried with nitrogen after cleaning; PEDOT:PSS was spin-coated on the surface of the conductive anode ITO / Graphene to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 was prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 was 1.4 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 280 nm, and the layer was baked at 120°C for 15 minutes; A visible light sensitive layer PPDT2FBT:PNNT (60%:40%; 26mg / ml; 300rpm; 1.5μm) was prepared on the perovskite control layer by spin coating, that is, PPDT2FBT and PNNT were mixed at a mass ratio of 60%:40% to prepare a 26mg / ml solution, the spin coating speed was 300rpm, and the thickness of the formed visible light sensitive layer was 1.5μm; an electron transport layer PCBM with a thickness of 10nm was prepared on the surface of the visible light sensitive layer by spin coating, and a metal anode Al with a thickness of 100nm was evaporated on the electron transport layer. Under standard test conditions, that is, under -1V and visible light illumination, the responsivity of the photodetector at a wavelength of 450nm was measured to be 0.62A / W; the responsivity at a wavelength of 750nm was 1.1A / W.

[0047] Embodiment 7:

[0048] The substrate composed of a transparent substrate and a conductive anode ITO was cleaned and dried with nitrogen after cleaning; PTAA was spin-coated on the surface of the conductive anode ITO to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 was prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 was 1.6 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 300 nm, and it was baked at 120°C for 15 minutes; The visible light sensitive layer PPDT2FBT:PNNT (50%:50%; 30mg / ml; 300rpm; 2μm) was prepared by coating, that is, PPDT2FBT and PNNT were mixed at a mass ratio of 50%:50% to prepare a 30mg / ml solution, the spin coating speed was 300rpm, and the thickness of the formed visible light sensitive layer was 2.0μm; an electron transport layer ICBA with a thickness of 10nm was prepared on the surface of the visible light sensitive layer by spin coating, and a metal anode Cu with a thickness of 100nm was evaporated on the electron transport layer. Under standard test conditions, that is, under -1V and visible light illumination, the responsivity of the photodetector at a wavelength of 450nm was measured to be 0.58A / W; the responsivity at a wavelength of 750nm was 0.52A / W.

[0049] Embodiment 8:

[0050] The substrate composed of a transparent substrate and a conductive anode graphene was cleaned and dried with nitrogen after cleaning; P3HT was spin-coated on the surface of the conductive anode graphene to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 was spin-coated on the hole transport layer, wherein the molar concentration of (F-NH3I)2PbI2 was 1.5 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 300 nm, and it was baked at 120°C for 15 minutes; and a P3HT was spin-coated on the perovskite control layer. Prepare a visible light sensitive layer PPDT2FBT: PNNT (55%: 45%; 25 mg / ml; 250 rpm; 1.8 μm), that is, PPDT2FBT and PNNT are mixed at a mass ratio of 55%: 45% to prepare a 25 mg / ml solution, the spin coating speed is 250 rpm, and the thickness of the formed visible light sensitive layer is 1.8 μm; prepare an electron transport layer Bis-C60 / BCP with a thickness of 10 nm on the surface of the visible light sensitive layer by spin coating, and evaporate a metal anode Cu with a thickness of 100 nm on the electron transport layer. Under standard test conditions, that is, under -1 V and visible light illumination, the responsivity of the photodetector at a wavelength of 450 nm is measured to be 0.6 A / W; the responsivity at a wavelength of 750 nm is 0.76 A / W.

[0051] Embodiment 9:

[0052] The substrate composed of a transparent substrate and a conductive anode ITO was cleaned and dried with nitrogen after cleaning; Spiro-OMeTAD was spin-coated on the surface of the conductive anode ITO to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 was prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 was 1.4 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 280 nm, and the layer was baked at 120°C for 15 minutes; a visible light sensitive layer P was prepared on the perovskite control layer by spin coating BDTTT-EFT: PPDT2FBT: PNNT (30%: 30%: 40%; 26 mg / ml; 300 rpm; 1.6 μm), that is, PBDTTT-EFT, PPDT2FBT and PNNT are mixed in a mass ratio of 30%: 30%: 40% to prepare a 26 mg / ml solution, the spin coating speed is 300 rpm, and the thickness of the formed visible light sensitive layer is 1.6 μm; an electron transport layer PCBM with a thickness of 10 nm is prepared on the surface of the visible light sensitive layer by spin coating, and a metal anode Cu with a thickness of 100 nm is evaporated on the electron transport layer. Under standard test conditions, that is, under -1 V and visible light illumination, the responsivity of the photodetector at a wavelength of 450 nm is measured to be 1.2 A / W; the responsivity at a wavelength of 750 nm is 1.8 A / W.

[0053] Embodiment 10:

[0054] The substrate composed of a transparent substrate and a conductive anode ITO was cleaned and dried with nitrogen after cleaning; PTAA was spin-coated on the surface of the conductive anode ITO to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 was prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 was 1.6 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 300 nm, and it was baked at 120°C for 15 minutes; a visible light sensitive layer PBDTTT was spin-coated on the perovskite control layer -EFT: PPDT2FBT: PNNT (25%: 25%: 50%; 30mg / ml; 320rpm; 2μm), that is, PBDTTT-EFT, PPDT2FBT and PNNT are mixed in a mass ratio of 25%: 25%: 50% to prepare a 30mg / ml solution, the spin coating speed is 320rpm, and the thickness of the formed visible light sensitive layer is 2.0μm; an electron transport layer ICBA with a thickness of 10nm is prepared on the surface of the visible light sensitive layer by spin coating, and a metal anode Cu with a thickness of 100nm is evaporated on the electron transport layer. Under standard test conditions, that is, under -1V and visible light illumination, the responsivity of the photodetector at a wavelength of 450nm is measured to be 1.4A / W; the responsivity at a wavelength of 750nm is 2.1A / W.

[0055] Embodiment 11:

[0056] The substrate composed of a transparent substrate and a conductive anode Graphene was cleaned and dried with nitrogen after cleaning; P3HT was spin-coated on the surface of the conductive anode Graphene to prepare a hole transport layer; a perovskite control layer (F-NH3I)2PbI2 was prepared on the hole transport layer by spin coating, wherein the molar concentration of (F-NH3I)2PbI2 was 1.5 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 300 nm, and it was baked at 120°C for 15 minutes; a visible light sensitive layer PBD was spin-coated on the perovskite control layer TTT-EFT: PPDT2FBT: PNNT (20%: 35%: 45%; 26 mg / ml; 250 rpm; 2 μm), that is, PBDTTT-EFT, PPDT2FBT and PNNT are mixed in a mass ratio of 20%: 35%: 45% to prepare a 26 mg / ml solution, the spin coating speed is 250 rpm, and the thickness of the formed visible light sensitive layer is 2.0 μm; an electron transport layer PCBM / BCP with a thickness of 10 nm is prepared on the surface of the visible light sensitive layer by spin coating, and a metal anode Cu with a thickness of 100 nm is evaporated on the electron transport layer. Under standard test conditions, that is, under -1 V and visible light illumination, the responsivity of the photodetector at a wavelength of 450 nm is measured to be 1.6 A / W; the responsivity at a wavelength of 750 nm is 1.8 A / W.

[0057] Embodiment 12:

[0058] The substrate composed of a transparent substrate and a conductive anode Graphene was cleaned and dried with nitrogen after cleaning; P3HT was spin-coated on the surface of the conductive anode Graphene to prepare a hole transport layer; a perovskite control layer (C4H9-NH3I)2PbI2 was prepared by spin coating on the hole transport layer, wherein the molar concentration of (C4H9-NH3I)2PbI2 was 1.5 mol / L, the spin coating speed was 1000 rpm / 60s, the thickness of the formed perovskite control layer was 300 nm, and it was baked at 120°C for 15 minutes; a visible light sensitive layer PBDT was spin-coated on the perovskite control layer TT-EFT: PPDT2FBT: PNNT (20%: 35%: 45%; 26 mg / ml; 250 rpm; 2 μm), that is, PBDTTT-EFT, PPDT2FBT and PNNT are mixed in a mass ratio of 20%: 35%: 45% to prepare a 26 mg / ml solution, the spin coating speed is 250 rpm, and the thickness of the formed visible light sensitive layer is 2.0 μm; an electron transport layer PCBM / BCP with a thickness of 10 nm is prepared on the surface of the visible light sensitive layer by spin coating, and a metal anode Cu (100 nm) with a thickness of 100 nm is evaporated on the electron transport layer. Under standard test conditions, that is, under -1 V and visible light illumination, only a single response is measured at a wavelength of 750 nm, and the responsivity is 0.8 A / W.

[0059] Embodiment 12 is a method for preparing an existing photoelectric detection device, that is, the photoelectric detection devices prepared in Embodiments 1 to 11 respond at wavelengths of 450nm and 750nm, that is, the photoelectric detection devices prepared by the present invention can achieve dual-band response. In the field of image sensing and imaging, multiple photoelectric detection devices are usually used to respond to light, with many components and low integration, which is extremely inconvenient when used. The photoelectric detection device of the present invention can achieve dual-band response, which can improve integration in the field of image sensing and imaging, making it have great application prospects in the field of image sensing and imaging.

[0060] In summary, the photoelectric detection device of the present invention utilizes the perovskite regulating layer to absorb light in the short-wave band, and utilizes the visible light sensitive layer to absorb light in the strong-wave band, so that only blue light and red light photons are converted into electrons and output to the circuit, thereby realizing the dual-band response of the photoelectric detection device. At the same time, the photoelectric detection device of the present invention has a "sandwich" structure, and all materials are formed into films by evaporation or spin coating, which has the advantages of simple preparation process, low equipment requirements, short preparation time, less time consumption and low cost; in addition, the photoelectric detection device has great application prospects in the fields of image sensing and imaging.

[0061] The above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention.

Claims

1. A photoelectric detection device, characterized in that: It includes a transparent substrate, a conductive anode, a hole transport layer, a perovskite regulation layer, a visible light sensitive layer, an electron transport layer and a metal cathode, wherein the material of the perovskite regulation layer is (F-NH3I)2PbI2, and the structure of F-NH3I is: The visible light sensitive layer includes a donor material and an acceptor material, wherein the mass percentage of the donor material is 50% to 60%, and the mass percentage of the acceptor material is 40% to 50%; the donor material is one or more of PBDTTT-EFT and PPDT2FBT, wherein the structure of PBDTTT-EFT is: The structure of PPDT2FBT is: The receptor material is PNNT, and the structural formula of PNNT is: The perovskite regulating layer can absorb light waves in the ultraviolet band, the visible light sensitive layer can absorb light waves in the range of 500nm-730nm, the thickness of the perovskite regulating layer is 250nm-300nm, and the thickness of the visible light sensitive layer is 1μm-2μm.

2. The photoelectric detection device according to claim 1, characterized in that: The material of the transparent substrate is any one or more of glass, transparent polymer flexible material and biodegradable flexible material; the transparent polymer flexible material is one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, chloroacetic acid resin and polyacrylic acid.

3. The photoelectric detection device according to claim 1, characterized in that: The material of the conductive anode is any one or more of indium tin oxide, graphene and carbon nanotubes.

4. The photoelectric detection device according to claim 1, characterized in that: The material of the hole transport layer is any one or more of molybdenum trioxide, PEDOT:PSS, CuI, CuSCN, CuPc, NiO, P3HT, Spiro-OMeTAD and PTAA.

5. The photoelectric detection device according to claim 1, characterized in that: The electron transport layer material is any one or more of TiO2, ZnO, PCBM, ICBA, Bis-C60, PFN and BCP.

6. The photoelectric detection device according to claim 1, characterized in that: The material of the metal cathode is a metal film or an alloy film, the metal film is any one of lithium, magnesium, calcium, strontium, aluminum and indium, and the alloy film is an alloy film made of any one of lithium, magnesium, calcium, strontium, aluminum and indium and any one of copper, gold and silver.

7. The photoelectric detection device according to claim 1, characterized in that: The thickness of the hole transport layer is 10 nm, the thickness of the electron transport layer is 10 nm, and the thickness of the metal cathode is 100 nm.

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