Method for manufacturing organic EL device and apparatus for forming thin film sealing structure

Abstract

The present invention discloses a manufacturing method of an organic EL device and a thin film sealing structure forming apparatus. The manufacturing method of the organic EL device includes a step of forming a driving circuit layer on a substrate; a step of forming an inorganic protective layer on the driving circuit substrate; and a step of forming an organic planarization layer on the inorganic protective layer.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing an organic EL device (for example, an organic EL display device and an organic EL lighting device) and a thin film sealing structure forming apparatus. Background Art

[0002] Organic EL (Electro Luminescence) display devices have started to be put into practical use. One of the characteristics of an organic EL display device is that a flexible display device can be obtained. An organic EL display device includes at least one organic EL element (Organic Light Emitting Diode: OLED) per pixel and at least one TFT (Thin Film Transistor) that controls the current supplied to each OLED. Hereinafter, the organic EL display device will be referred to as an OLED display device. An OLED display device that includes a switching element such as a TFT for each OLED is called an active matrix type OLED display device. Further, a substrate on which a TFT and an OLED have been formed is called an element substrate.

[0003] OLEDs (especially an organic light emitting layer and a cathode electrode material) are liable to deteriorate due to the influence of moisture and are liable to cause display unevenness. As a technique for providing a sealing structure that protects an OLED from moisture and does not impair flexibility, a thin film encapsulation (TFE) technique has been developed. The thin film encapsulation technique laminates an inorganic barrier layer and an organic barrier layer with each other, thereby attempting to obtain sufficient water vapor barrier properties with a thin film. From the viewpoint of the moisture resistance reliability of an OLED display device, as the WVTR (Water Vapor Transmission Rate: WVTR) of the thin film sealing structure, typically, 1×10 -4 g / m 2 / day or less is pursued.

[0004] The thin film sealing structure used in currently commercially available OLED display devices includes an organic barrier layer (a polymer barrier layer) having a thickness of about 5 μm to about 20 μm. Such a relatively thick organic barrier layer serves to planarize the surface of the element substrate. However, there is a problem that the flexibility of the OLED display device is more restricted as the organic barrier layer becomes thicker.

[0005] In addition, there is also a problem of low mass productivity. The relatively thick organic barrier layer described above is formed using printing techniques such as inkjet printing and microjet printing. On the other hand, the inorganic barrier layer is formed in a vacuum (e.g., 1 Pa or less) or air using thin film deposition techniques. The formation of the organic barrier layer using printing techniques is carried out in the atmosphere or nitrogen atmosphere, and the formation of the inorganic barrier layer is carried out in a vacuum. Therefore, in the process of forming the thin film sealing structure, the component substrate is taken out of the vacuum chamber and put in, resulting in low mass productivity.

[0006] Further, for example, as disclosed in Patent Document 1, a film forming apparatus capable of continuously manufacturing an inorganic barrier layer and an organic barrier layer has been developed.

[0007] In addition, in Patent Document 2, a thin film sealing structure is disclosed. When a first inorganic material layer, a first resin material, and a second inorganic material layer are formed in this order from the component substrate side, the first resin material is offset to the periphery of the convex portion of the first inorganic material layer (the first inorganic material layer covering the convex portion). According to Patent Document 2, the first resin material is offset to the periphery of the convex portion where there is a risk of insufficient coverage by the first inorganic material layer, thereby suppressing the intrusion of moisture and oxygen from this portion. In addition, the first resin material functions as a base layer for the second inorganic material layer, whereby the second inorganic material layer can be appropriately formed, and the side surface of the first inorganic material layer can be appropriately covered with a desired film thickness. The first resin material is formed as follows. The atomized organic material that has been heated and vaporized is supplied to the component substrate that has been maintained at a temperature below room temperature, and the organic material condenses and forms water droplets on the substrate. The water droplet-shaped organic material moves on the substrate by capillary action or surface tension and is offset to the boundary portion between the side surface of the convex portion of the first inorganic material layer and the substrate surface. Thereafter, the organic material is cured, thereby forming the first resin material at the boundary portion. An OLED display device including the same thin film sealing structure is disclosed in Patent Document 3. In addition, Patent Document 4 discloses a film forming apparatus used in the manufacture of an OLED display device.

[0008] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2013 - 186971.

[0009] Patent Document 2: International Publication No. 2014 / 196137.

[0010] Patent Document 3: Japanese Unexamined Patent Application Publication No. 2016 - 39120.

[0011] Patent Document 4: Japanese Unexamined Patent Application Publication No. 2013 - 64187. Summary of the Invention

[0012] In the thin film sealing structure described in Patent Document 2 or 3, a thick organic barrier layer is not included, and thus the bendability of the OLED display device can be considered to be improved. In addition, the inorganic barrier layer and the organic barrier layer can be formed continuously, and thus the mass productivity is also improved.

[0013] However, according to the study by the present inventors, when the organic barrier layer is formed by the method described in Patent Document 2 or 3, there may be a problem that sufficient moisture resistance reliability cannot be obtained.

[0014] In the case of forming the organic barrier layer by a printing method such as an inkjet method, the organic barrier layer can be formed only in the active region (active region, which may also be referred to as "element formation region" or "display region") on the element substrate, and is not formed in the region outside the active region. Therefore, in the periphery (outer side) of the active region, there is a region where the first inorganic material layer and the second inorganic material layer are in direct contact, and the organic barrier layer is completely surrounded by the first inorganic material layer and the second inorganic material layer and is isolated from the surroundings.

[0015] In contrast, in the method for forming the organic barrier layer described in Patent Document 2 or 3, a resin (organic material) is supplied to the entire surface of the element substrate, and the resin is biased to the boundary portion between the side surface of the convex portion on the surface of the element substrate and the substrate surface by the surface tension of the liquid resin. Therefore, in the region outside the active region (which may also be referred to as "peripheral region"), that is, in the terminal region where a plurality of terminals are arranged and in the pull-out wiring region where the pull-out wiring extending from the active region to the terminal region is formed, the organic barrier layer may also be formed. Specifically, for example, the resin is biased to the boundary portion between the side surfaces of the pull-out wiring and the terminals and the substrate surface. In this way, the end portions of the portion of the organic barrier layer formed along the pull-out wiring are not surrounded by the first inorganic barrier layer and the second inorganic barrier layer and are exposed to the atmosphere (peripheral air).

[0016] The organic barrier layer has a lower water vapor barrier property than the inorganic barrier layer, and thus the organic barrier layer formed along the pull-out wiring becomes a passage for guiding water vapor in the atmosphere into the active region.

[0017] Here, the problems of the thin film sealing structure suitably used for the flexible organic EL display device have been described, but the thin film sealing structure is not limited to the organic EL display device and is also used in other organic EL devices such as organic EL lighting devices.

[0018] The present invention is made to solve the above problems, and an object thereof is to provide a method for manufacturing an organic EL device and a thin film sealing structure forming apparatus, the organic EL device including a thin film sealing structure including a thin organic barrier layer with improved mass productivity and moisture resistance reliability.

[0019] The present invention relates to a method for manufacturing an organic EL device according to an embodiment of the present invention, wherein the organic EL device comprises: a substrate; a driving circuit layer comprising a plurality of TFTs formed on the substrate, a plurality of gate buses and a plurality of source buses respectively connected to any one of the plurality of TFTs, a plurality of terminals, and a plurality of lead-out wirings connecting the plurality of terminals and any one of the plurality of gate buses or the plurality of source buses; an inorganic protective layer formed on the driving circuit layer to expose at least the plurality of terminals; an organic planarization layer formed on the inorganic protective layer; an organic EL element layer formed on the organic planarization layer and comprising a plurality of organic EL elements respectively connected to any one of the plurality of TFTs; and a thin film sealing structure formed in a manner covering the organic EL element layer and comprising a first inorganic barrier layer, an organic barrier layer in contact with an upper surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with an upper surface of the organic barrier layer, wherein the organic barrier layer is formed The invention relates to a method for manufacturing a thin film sealing structure ...

[0020] The organic planarization layer is formed of, for example, a photosensitive resin, and preferably, is formed of polyimide.

[0021] The manufacturing method of a certain embodiment also includes: after the process of forming the organic EL element layer, the process of selectively forming the first inorganic barrier layer in the active area where the multiple organic EL elements are formed; after the process of forming the first inorganic barrier layer, the process of placing the substrate in a chamber and supplying vapor or mist-like photocurable resin into the chamber; the process of condensing the photocurable resin on the first inorganic barrier layer in such a way that the photocurable resin does not exist on a portion of the first inorganic barrier layer where the cone angle is less than 90°; and the process of irradiating the condensed photocurable resin with light to form the organic barrier layer composed of the photocurable resin.

[0022] The manufacturing method of a certain embodiment also includes: after the process of forming the organic EL element layer, the process of selectively forming the first inorganic barrier layer in the active area where the multiple organic EL elements are formed; after the process of forming the first inorganic barrier layer, the process of placing the substrate in a chamber and supplying vapor or mist of photocurable resin into the chamber; the process of condensing the photocurable resin on the first inorganic barrier layer to form a liquid film; the process of irradiating the liquid film of the photocurable resin with light to form a photocurable resin layer; and the process of ashing the photocurable resin layer to form the organic barrier layer around the protrusions on the first inorganic barrier layer.

[0023] A film sealing structure forming apparatus according to an embodiment of the present invention is used for manufacturing an organic EL device, and the organic EL device includes: a substrate; a driving circuit layer including a plurality of TFTs formed on the substrate, a plurality of gate buses respectively connected to any one of the plurality of TFTs, a plurality of source buses, a plurality of terminals, and a plurality of pull-out wirings connecting any one of the plurality of terminals and any one of the plurality of gate buses or the plurality of source buses; an inorganic protective layer formed on the driving circuit layer, at least exposing the plurality of terminals; an organic planarization layer formed on the inorganic protective layer; an organic EL element layer formed on the organic planarization layer and including a plurality of organic EL elements respectively connected to any one of the plurality of TFTs; and a film sealing structure formed so as to cover the organic EL element layer and including a first inorganic barrier layer, an organic barrier layer in contact with the upper surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with the upper surface of the organic barrier layer, the organic barrier layer being formed in a region surrounded by an inorganic barrier layer joint directly contacted by the first inorganic barrier layer and the second inorganic barrier layer. When viewed from the normal direction of the substrate, in the region where the inorganic protective layer is formed, the organic planarization layer is formed, and the plurality of organic EL elements are arranged in the region where the organic planarization layer is formed. The outer edge of the film sealing structure intersects the plurality of pull-out wirings and exists between the outer edge of the organic planarization layer and the outer edge of the inorganic protective layer. In a portion where the inorganic protective layer and the first inorganic barrier layer are in direct contact above the plurality of pull-out wirings, the conical angle of the side surface in the shape of a cross section of the first inorganic barrier layer parallel to the line width direction of the plurality of pull-out wirings is less than 90°. The film sealing structure forming apparatus includes a film forming apparatus and a CVD apparatus. The film forming apparatus includes: a chamber; a stage disposed in the chamber and accommodating an element substrate having the driving circuit layer, the inorganic protective layer, the organic planarization layer, the organic EL element layer, and the first inorganic barrier layer on the stage, and the temperature of the upper surface of the stage accommodating the element substrate can be cooled to -20°C to -15°C; a raw material supply device capable of supplying vapor or mist of a photocurable resin into the chamber; and an ultraviolet irradiation device capable of irradiating ultraviolet rays onto the element substrate. Above the first inorganic barrier layer, ultraviolet rays are irradiated onto the photocurable resin that has been condensed in a state where the photocurable resin does not exist above the portion of the first inorganic barrier layer where the conical angle is less than 90°, thereby forming an organic film as the organic barrier layer. The CVD apparatus is disposed in the subsequent stage of the film forming apparatus and forms an inorganic film as the second inorganic barrier layer.

[0024] A thin-film sealing structure forming apparatus according to an embodiment of the present invention is used for manufacturing an organic EL device, and the organic EL device includes: a substrate; a driving circuit layer including a plurality of TFTs formed on the substrate, a plurality of gate buses respectively connected to any one of the plurality of TFTs, a plurality of source buses, a plurality of terminals, and a plurality of pull-out wirings connecting any one of the plurality of terminals and any one of the plurality of gate buses or the plurality of source buses; an inorganic protective layer formed on the driving circuit layer and at least exposing the plurality of terminals; an organic planarization layer formed on the inorganic protective layer; an organic EL element layer formed on the organic planarization layer and including a plurality of organic EL elements respectively connected to any one of the plurality of TFTs; and a thin-film sealing structure formed to cover the organic EL element layer and including a first inorganic barrier layer, an organic barrier layer in contact with the upper surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with the upper surface of the organic barrier layer, wherein the organic barrier layer is formed in a region surrounded by an inorganic barrier layer joint directly contacted by the first inorganic barrier layer and the second inorganic barrier layer. When viewed from the normal direction of the substrate, the organic planarization layer is formed in the region where the inorganic protective layer is formed, and the plurality of organic EL elements are arranged in the region where the organic planarization layer is formed. The outer edge of the thin-film sealing structure intersects the plurality of pull-out wirings and exists between the outer edge of the organic planarization layer and the outer edge of the inorganic protective layer; in a portion where the inorganic protective layer and the first inorganic barrier layer are in direct contact above the plurality of pull-out wirings, the conical angle of the side surface in the shape of the cross-section of the first inorganic barrier layer parallel to the line width direction of the plurality of pull-out wirings is less than 90°. The thin-film sealing structure forming apparatus includes a film forming apparatus, an ashing apparatus, and a CVD apparatus. The film forming apparatus includes: a chamber; a stage disposed in the chamber and accommodating an element substrate having the driving circuit layer, the inorganic protective layer, the organic planarization layer, the organic EL element layer, and the first inorganic barrier layer on the stage, and the temperature of the upper surface of the stage accommodating the element substrate can be cooled to -20°C to -15°C; a raw material supply device capable of supplying vapor or mist-like photocurable resin into the chamber; and an ultraviolet irradiation device capable of irradiating ultraviolet rays onto the element substrate. Above the first inorganic barrier layer, a photocured resin layer is formed by irradiating ultraviolet rays onto a liquid film formed by condensing the photocurable resin. The ashing apparatus is disposed at the rear stage of the film forming apparatus, and an organic film serving as the organic barrier layer is formed by performing plasma ashing on the organic film on the element substrate using N2O gas; the CVD apparatus is disposed at the subsequent stage of the ashing apparatus and forms an inorganic film serving as the second inorganic barrier layer.

[0025] According to an embodiment of the present invention, a method for manufacturing an organic EL display device including a thin film sealing structure including a thin organic barrier layer with improved mass productivity and moisture resistance reliability and a thin film sealing structure forming apparatus are provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 (a) is a schematic partial cross-sectional view of an active region of an OLED display device 100 according to an embodiment of the present invention. Figure 1 (b) is a partial cross-sectional view of the TFE structure 10 formed on the OLED 3.

[0027] Figure 2 FIG. 1 is a schematic top view of an OLED display device 100 according to an embodiment of the present invention.

[0028] Figure 3 (a) and (b) are schematic cross-sectional views of the OLED display device 100. Figure 3 (a) is along Figure 2 The cross-sectional view of line 3A-3A' in Figure 3 (b) is along Figure 2 The cross-sectional view of line 3B-3B' in Figure 3 (c) is a cross-sectional view showing the taper angle θ of the side surface of each layer.

[0029] Figure 4 (a) to (d) are schematic cross-sectional views of the OLED display device 100. Figure 4 (a) is along Figure 2 The cross-sectional view of line 4A-4A' in Figure 4 (b) is along Figure 2 The cross-sectional view of line 4B-4B' in Figure 4 (c) is along Figure 2 The cross-section of line 4C-4C' in Figure 4 (d) is along Figure 2 Cross-sectional view of line 4D-4D'.

[0030] Figure 5 (a) and (b) are the comparison examples of the OLED display devices 100B1 and 100B2. Figure 4 (b) Corresponding schematic cross-sectional view.

[0031] Figure 6 100C is a schematic top view of an OLED display device 100C according to a comparative example.

[0032] Figure 7 (a) and (b) are schematic cross-sectional views of an OLED display device 100C. Figure 7 (a) is along Figure 6Cross-sectional view along line 7A-7A' in Figure 7 (b) is a cross-sectional view along Figure 6 line 7B-7B' in

[0033] Figure 8 (a)-(c) are schematic cross-sectional views of the OLED display device 100C, Figure 8 (a) is a cross-sectional view along Figure 6 line 8A-8A' in Figure 8 (b) is a cross-sectional view along Figure 6 line 8B-8B' in Figure 8 (c) is a cross-sectional view along Figure 6 line 8C-8C' in

[0034] Figure 9 (a) and (b) are schematic cross-sectional views respectively showing examples of TFTs that the OLED display device of the embodiment may include.

[0035] Figure 10 (a)-(c) are schematic cross-sectional views of other OLED display devices of the embodiment, corresponding respectively to Figure 4 (b)-(d).

[0036] Figure 11 (a) and (b) are diagrams schematically showing the configuration of the film forming apparatus 200, Figure 11 (a) shows the state of the film forming apparatus 200 in the process of condensing the photocurable resin on the first inorganic barrier layer, Figure 11 (b) shows the state of the film forming apparatus 200 in the process of curing the photocurable resin. Detailed Embodiments

[0037] Hereinafter, with reference to the drawings, an OLED display device and a manufacturing method thereof according to an embodiment of the present invention will be described. Hereinafter, an OLED display device including a flexible substrate is exemplified, but the embodiments of the present invention are not limited to organic EL display devices, and may also be other organic devices such as organic EL lighting devices, and are not limited to the embodiments exemplified below.

[0038] First, with reference to Figure 1 (a) and (b), the basic configuration of the OLED display device 100 according to an embodiment of the present invention will be described. Figure 1 (a) is a schematic partial cross-sectional view of the active region of the OLED display device 100 according to an embodiment of the present invention, Figure 1 (b) is a partial cross-sectional view of the TFE structure 10 formed on the OLED3.

[0039] The OLED display device 100 includes a plurality of pixels, and each pixel includes at least one organic EL element (OLED). Here, for simplicity, the structure corresponding to one OLED is described.

[0040] As Figure 1 (a) shows, the OLED display device 100 includes a flexible substrate (hereinafter, sometimes only referred to as "substrate") 1, a circuit including TFTs (sometimes referred to as "driver circuit" or "backplane circuit") 2 formed on the substrate 1, an inorganic protective layer 2Pa formed on the circuit 2, an organic planarization layer 2Pb formed on the inorganic protective layer 2Pa, an OLED 3 formed on the organic planarization layer 2Pb, and a TFE structure 10 formed on the OLED 3. The OLED 3 is, for example, a top emission type. The uppermost part of the OLED 3 is, for example, an upper electrode or a cover layer (refractive index adjustment layer). Sometimes, the layer in which a plurality of OLEDs 3 are arranged is called an OLED layer 3. An optional polarizing plate 4 is disposed above the TFE structure 10. In addition, the circuit 2 and the OLED layer 3 may also share some components. Additionally, for example, a layer having a touch panel function may be disposed between the TFE structure 10 and the polarizing plate 4. That is, the OLED display device 100 can be changed into a display device with an on-cell type touch panel.

[0041] The substrate 1 is, for example, a polyimide film with a thickness of 15 μm. The thickness of the circuit 2 including TFTs is, for example, 4 μm. The inorganic protective layer 2Pa is, for example, a SiN x layer (500 nm) / SiO2 layer (100 nm) (upper layer / lower layer). The inorganic protective layer 2Pa may alternatively be a three-layer structure of SiO2 layer / SiN x layer / SiO2 layer, and the thickness of each layer is, for example, 200 nm / 300 nm / 100 nm. The organic planarization layer 2Pb is, for example, a photosensitive acrylic resin layer or a photosensitive polyimide layer with a thickness of 4 μm. The thickness of the OLED 3 is, for example, 1 μm. The thickness of the TFE structure is, for example, 2.5 μm or less.

[0042] Figure 1 (b) is a partial cross-sectional view of the TFE structure 10 formed on the OLED 3. A first inorganic barrier layer (for example, a SiN x layer) 12 is formed directly above the OLED 3, an organic barrier layer (for example, an acrylic resin layer) 14 is formed on the first inorganic barrier layer 12, and a second inorganic barrier layer (for example, a SiN x layer) 16 is formed on the organic barrier layer 14.

[0043] For example, the first inorganic barrier layer 12 is a SiN with a thickness of, for example, 1.5 μmx layer, and the second inorganic barrier layer 16 is, for example, a SiN layer with a thickness of 800 nm x layer, and the organic barrier layer 14 is, for example, an acrylic resin layer with a thickness of less than 100 nm. The thicknesses of the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are each independently 200 nm or more and 1500 nm or less, and the thickness of the organic barrier layer 14 is 50 nm or more and less than 200 nm. The thickness of the TFE structure 10 is preferably 400 nm or more and less than 3 μm, and more preferably 400 nm or more and 2.5 μm or less.

[0044] The TFE structure 10 is formed so as to protect the active region (refer to the active region R1 in Figure 2 ) of the OLED display device 100. At least in the active region R1, as described above, the first inorganic barrier layer 12, the organic barrier layer 14, and the second inorganic barrier layer 16 are included in this order from the side closer to the OLED 3. In addition, the organic barrier layer 14 does not exist as a film covering the entire surface of the active region R1 and includes an opening. The portion where the organic film actually exists within the organic barrier layer 14, excluding the opening, is called the "solid portion". The organic barrier layer 14 can be formed, for example, by the method described in Patent Document 1 or 2, or by the film forming apparatus 200 described later.

[0045] In addition, the "opening" (in some cases, also referred to as the "non-solid portion") does not need to be surrounded by the solid portion and includes a notch or the like. In the opening, the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact. Hereinafter, the portion where the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact is called the "inorganic barrier layer joint portion".

[0046] Hereinafter, with reference to Figure 2 and Figure 3 , the OLED display device 100 according to the embodiment of the present invention and its manufacturing method will be described.

[0047] Figure 2 FIG. shows a schematic top view of the OLED display device 100 according to the embodiment of the present invention. In addition, with reference to Figure 3 (a) to (c) and Figure 4 (a) to (d), the cross-sectional structure of the OLED display device 100 will be described. Figure 3 (a) and (b) are schematic cross-sectional views of the OLED display device 100. Figure 3 (a) is a cross-sectional view along the line 3A - 3A' in Figure 2 , and Figure 3 (b) is a cross-sectional view along the line 3B - 3B' in Figure 2 . Figure 3 (c) is a cross-sectional view showing the conical angle θ of the side surfaces of each layer.Figure 4 (a) to (d) are schematic cross-sectional views of the OLED display device 100. Figure 4 (a) is along Figure 2 The cross-sectional view of line 4A-4A' in Figure 4 (b) is along Figure 2 The cross-sectional view of line 4B-4B' in Figure 4 (c) is along Figure 2 The cross-section of line 4C-4C' in Figure 4 (d) is along Figure 2 Cross-sectional view of line 4D-4D'.

[0048] First, refer to Figure 2 The circuit 2 formed on the substrate 1 includes a plurality of TFTs (not shown), a plurality of gate bus lines (not shown) and a plurality of source bus lines (not shown) connected to any one of the plurality of TFTs (not shown). The circuit 2 may also be a known circuit for driving the plurality of OLEDs 3. The plurality of OLEDs 3 are connected to any one of the plurality of TFTs included in the circuit 2. The OLEDs 3 may also be known OLEDs.

[0049] The circuit 2 further comprises an active area (with a plurality of OLEDs 3) configured Figure 2 Multiple terminals 34 are arranged in the peripheral region R2 outside the active region R1 (the region surrounded by the dotted line in the figure), and multiple lead wirings 32 connect the multiple terminals 34 to either the multiple gate bus lines or the multiple source bus lines. The circuit 2 including the multiple TFTs, the multiple gate bus lines, the multiple source bus lines, the multiple lead wirings 32, and the multiple terminals 34 may be referred to as the entirety of the drive circuit layer 2. Furthermore, within the drive circuit layer 2, the portion formed within the active region R1 is designated as the drive circuit layer 2A.

[0050] In addition, Figure 2 In the drawings, only the lead wiring 32 and / or the terminal 34 are shown as components of the driving circuit layer 2. However, the driving circuit layer 2 includes not only the conductive layer including the lead wiring 32 and the terminal 34, but also one or more conductive layers, one or more insulating layers, and one or more semiconductor layers. The conductive layer, insulating layer, and semiconductor layer included in the driving circuit layer 2 are formed, for example, by Figure 9 The TFT configurations exemplified in (a) and (b) can be modified. Furthermore, an insulating film (base coat) may be formed on the substrate 1 as a base film for the driving circuit layer 2 .

[0051] When viewed from the normal direction of the substrate 1, an organic planarization layer 2Pb is formed within the region where the inorganic protective layer 2Pa is formed, and an active region R1 (2A, 3) is disposed within the region where the organic planarization layer 2Pb is formed. The outer edge of the film sealing structure 10 intersects with a plurality of extraction wirings 32 and exists between the outer edge of the organic planarization layer 2Pb and the outer edge of the inorganic protective layer 2Pa. Therefore, the organic planarization layer 2Pb and the OLED layer 3 are surrounded by a joint portion in direct contact with the inorganic protective layer 2Pa and the first inorganic barrier layer 12 (see Figure 3 (b) and Figure 4 (b)). The inorganic protective layer 2Pa is formed so as to expose at least a plurality of terminals 34. Once the inorganic protective film is formed so as to cover the terminals 34, the inorganic protective layer 2Pa including an opening for exposing the terminals 34 can also be formed by a photolithography process.

[0052] The inorganic protective layer 2Pa protects the drive circuit layer 2. The organic planarization layer 2Pb planarizes the surface forming the bottom of the OLED layer 3. The organic planarization layer 2Pb, like the organic barrier layer 14, has a lower water vapor barrier property than the inorganic protective layer 2Pa, the inorganic barrier layers 12, 16. Therefore, like the organic planarization layer 2Pbc of the OLED display device 100C of the comparative example shown in Figures 6 - 8 , if a part of it is exposed to the atmosphere (surrounding air), it absorbs moisture therefrom. As a result, the organic planarization layer 2Pbc becomes a passage for guiding water vapor in the atmosphere into the active region R1. As described above, in the OLED display device 100 of the embodiment, the organic planarization layer 2Pb is surrounded by a joint portion in direct contact with the inorganic protective layer 2Pa and the first inorganic barrier layer 12, so that the situation where moisture is guided from the organic planarization layer 2Pb into the active region R1 is prevented.

[0053] The organic planarization layer 2Pb is preferably formed from a photosensitive resin. The organic planarization layer 2Pb is formed using various coating methods and printing methods. In addition, if it has photosensitivity, the organic planarization layer 2Pb can be easily formed only in a predetermined region by a photolithography process. The photosensitive resin can be either positive type or negative type. A photosensitive acrylic resin or polyimide resin can be suitably used. Of course, if another photoresist is used, the organic planarization layer 2Pb can be formed using a resin that does not have photosensitivity.

[0054] In order to remove moisture contained in the organic planarization layer 2Pb before forming the OLED layer 3 on the organic planarization layer 2Pb, it is preferably heated (baked). The heating temperature is preferably 200°C or higher (for example, for at least 1 hour), more preferably 300°C or higher (for example, for at least 15 minutes). The air pressure can be atmospheric pressure. To prevent thermal degradation during this heating (baking) process, a highly heat-resistant resin material is preferably used, such as polyimide.

[0055] Furthermore, after the organic planarization layer 2Pb is formed, the device substrate may be stored or transported until the OLED layer 3 is formed. Specifically, after the device substrate with the drive circuit layer 2, inorganic protective layer 2Pa, and organic planarization layer 2Pb formed thereon is produced, and before the OLED layer 3 is formed, there may be a period of time (e.g., storage for a period of one day or more, ranging from several days) or it may be moved to another factory. During this period, as a method to prevent the surface of the organic planarization layer 2Pb from being contaminated or dust from adhering during transport, a positive photoresist film may be formed to cover the organic planarization layer 2Pb. This photoresist film is preferably formed by applying a photoresist solution and then pre-baking (to remove the volatilization of the solvent: for example, heating at a temperature range of approximately 90°C to 110°C for approximately 5 to 30 minutes). By removing the photoresist film after storage or transport, and before the OLED layer 3 is formed, a clean surface of the organic planarization layer 2Pb can be obtained. The removal of the photoresist film is preferably performed by exposing the entire surface of the photoresist film without performing a conventional post-bake and developing. As a material for forming a positive-type photoresist film, for example, OFPR-800 manufactured by Tokyo Ohka Co., Ltd. can be suitably used.

[0056] Next, refer to Figure 3 (a) to (c) and Figure 4 (a) to (d) further illustrate the cross-sectional structure of the OLED display device 100 in detail.

[0057] like Figure 3 (a), (b) and Figure 4 As shown in (a) and (b), the TFE structure 10 includes a first inorganic barrier layer 12 formed on the OLED 3, an organic barrier layer 14 connected to the first inorganic barrier layer 12, and a second inorganic barrier layer 16 connected to the organic barrier layer 14. The first inorganic barrier layer 12 and the second inorganic barrier layer 16 are, for example, SiN x The layer is selectively formed only in a predetermined region by a plasma CVD method using a mask so as to cover the active region R1.

[0058] The organic barrier layer 14 can be formed, for example, by the method described in Patent Document 2 or 3 above. For example, in a chamber, a vapor or mist of an organic material (such as an acrylic monomer) is supplied onto a device substrate maintained at a temperature below room temperature and condensed on the device substrate. Due to the capillary action or surface tension of the liquefied organic material, it is biased at the boundary between the side surface of the convex portion of the first inorganic barrier layer 12 and the flat portion. Subsequently, ultraviolet rays are irradiated onto the organic material, for example, to form a solid portion of the organic barrier layer (such as an acrylic resin layer) 14 at the boundary around the convex portion. In the organic barrier layer 14 formed by this method, there is substantially no solid portion in the flat portion. Regarding the method for forming the organic barrier layer, the disclosures of Patent Documents 2 and 3 are incorporated herein by reference.

[0059] In addition, the organic barrier layer 14 can also be formed by adjusting the initial thickness of the resin layer formed using the film-forming apparatus 200 (for example, setting it to less than 100 nm) and / or by ashing the once-formed resin layer. The ashing treatment can be performed, for example, by plasma ashing using at least one gas among N2O, O2, and O3, as described later.

[0060] Figure 3 (a) is a cross-sectional view along the Figure 2 line 3A - 3A' in, showing the portion containing the particle P. The particle P is a fine impurity generated in the manufacturing process of the OLED display device. For example, it is a fine fragment of glass, a metal particle, or an organic particle. When the mask evaporation method is used, particles are particularly likely to be generated.

[0061] As Figure 3 (a) shows, the organic barrier layer (solid portion) 14 can be formed only around the particle P. This is because the acrylic monomer applied after the formation of the first inorganic barrier layer 12 is condensed and biased around the surface of the first inorganic barrier layer 12a on the particle P (the conical angle θ is 90° or more). On the flat portion of the first inorganic barrier layer 12, an opening (non-solid portion) of the organic barrier layer 14 is formed.

[0062] If there is a particle (for example, with a diameter of about 1 μm or more) P, there may be a case where a crack (notch) 12c is formed in the first inorganic barrier layer 12. This is considered to be caused by the conflict (impact, impinge) between the SiN x layer 12a growing from the surface of the particle P and the SiN x layer 12b growing from the flat portion of the surface of the OLED 3. If such a crack 12c exists, the barrier property of the TFE structure 10 is reduced.

[0063] In the TFE structure 10 of the OLED display device 100, as Figure 3 shown in (a), the organic barrier layer 14 is formed so as to fill the cracks 12c of the first inorganic barrier layer 12, and the surface of the organic barrier layer 14 continuously and smoothly connects the surface of the first inorganic barrier layer 12a on the particle P and the surface of the first inorganic barrier layer 12b on the flat portion of the OLED 3. Therefore, defects are not formed in the first inorganic barrier layer 12 on the particle P and the second inorganic barrier layer 16 formed on the organic barrier layer 14, and a dense film is formed. In this way, by means of the organic barrier layer 14, even if there are particles P, the barrier property of the TFE structure 10 can be maintained.

[0064] Next, with reference to Figure 3 (b) and Figure 4 (a) to (d), the cross-sectional structure on the pull-out wiring 32 and the terminal 34 will be described.

[0065] As Figure 3 shown in (b), the pull-out wiring 32 and the terminal 34 are integrally formed on the substrate 1 so as to expose the terminal 34, and an inorganic protective layer 2Pa is formed on the pull-out wiring 32. An organic planarization layer 2Pb is formed on the inorganic protective layer 2Pa, and an OLED layer 3 is formed on the organic planarization layer 2Pb. The TFE structure 10 is formed so as to cover the OLED layer 3 and the organic planarization layer 2Pb, and the OLED layer 3 and the organic planarization layer 2Pb are surrounded by the joint where the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact. In addition, the organic barrier layer (solid portion) 14 between the first inorganic barrier layer 12 and the second inorganic barrier layer 16 of the TFE structure 10 is formed only around the convex portions such as particles, and thus is not shown here. The organic barrier layer (solid portion) 14 is surrounded by the inorganic barrier layer joint where the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact.

[0066] As Figure 4 shown in (a), in the region near the active region R1 (the cross-section along the Figure 2 4A - 4A' line in), an inorganic protective layer 2Pa, an organic planarization layer 2Pa, and the TFE structure 10 are formed on the pull-out wiring 32.

[0067] As Figure 4 shown in (b), in the cross-section along the Figure 2 4B - 4B' line in, the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact, and the organic planarization layer 2Pb is surrounded by the joint where the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact (refer to Figure 2 , Figure 3 (b)).

[0068] As shown in Figure 4 (c), in the region near the terminal 34, only the inorganic protective layer 2Pa is formed on the pull-out wiring 32.

[0069] As shown in Figure 4 (d), the terminal 34 also protrudes from the inorganic protective layer 2Pa and is used for electrical connection with an external circuit (e.g., FPC (Flexible Printed Circuits)).

[0070] The regions including Figure 4 (b) to (d) are not covered with the organic planarization layer 2Pb. Therefore, in the process of forming the organic barrier layer 14 of the TFE structure 10, the organic barrier layer (solid part) can be formed. For example, if the side surface in the cross-sectional shape parallel to the line width direction of the pull-out wiring 32 includes a conical angle θ of 90° or more, the organic barrier layer can be formed along the side surface of the pull-out wiring 32. However, as shown in Figure 4 (b) to (d), in the OLED display device 100 of the embodiment, at least in these regions, the conical angle θ of the side surface in the cross-sectional shape of the pull-out wiring 32 and the terminal 34 is set to less than 90°, and there will be no situation of light-curable resin biasing. Therefore, there will be no situation of forming the organic barrier layer (solid part) along the side surfaces of the pull-out wiring 32 and the terminal 34.

[0071] Here, referring to Figure 3 (c), the conical angle θ of the side surface of each layer will be described. Figure 3 (c) is a cross-sectional view showing the conical angle θ of the side surface of each layer. For example, it corresponds to the cross-sectional view shown in Fig. (b). As shown in Figure 3 (c), the conical angle θ of the side surface in the cross-sectional shape parallel to the width direction of the pull-out wiring 32 is expressed as θ(32), and the same as the conical angle θ of the side surfaces of other layers, it is expressed as θ (reference numeral of the component).

[0072] In this way, for the inorganic protective layer 2Pa formed on the pull-out wiring 32, and the conical angles θ of the first inorganic barrier layer 12 and the second inorganic barrier layer 16 of the TFE structure 10 formed on the inorganic protective layer 2Pa, the relationship of θ(32)≥θ(2Pa)≥θ(12)≥θ(16) is satisfied. Therefore, if the conical angle θ(32) of the side surface of the pull-out wiring 32 is less than 90°, the conical angle θ(2Pa) of the side surface of the inorganic protective layer 2Pa and the conical angle θ(12) of the side surface of the first inorganic barrier layer 12 will also be less than 90°.

[0073] If the side taper angle θ is greater than 90°, the organic barrier layer formation methods described in Patent Documents 2 or 3 cause vapor or mist of the organic material (e.g., acrylic monomer) to condense along the boundary between the side and the flat surface (where the angle is less than 90°), forming the organic barrier layer (solid portion). This results in the organic barrier layer (solid portion) formed along the lead-out wiring serving as a path for guiding water vapor from the atmosphere into the active area.

[0074] For example, Figure 5 (a) The OLED display device 100B1 of the comparative example Figure 4 As shown in the schematic cross-sectional view corresponding to (b), if the side taper angle θ(32B1) of the lead wiring 32B1 and the side taper angle θ(12B1) of the first inorganic barrier layer 12B1 are 90° or greater, an organic barrier layer (solid portion) 14B1 is formed along the side of the first inorganic barrier layer 12B1 of the TFE structure 10B1 and between the first inorganic barrier layer 12B1 and the second inorganic barrier layer 16B1. Furthermore, the OLED display device 100B1 may also be configured such that the inorganic protective layer Pa in the OLED display device 100 of the embodiment is omitted, and the taper angle θ(32) of the side taper angle of the lead wiring 32 and the taper angle θ(12) of the side taper angle of the first inorganic barrier layer 12 are changed to 90° or greater.

[0075] In addition, if Figure 5 (b) The OLED display device 100B2 of the comparative example Figure 4 As shown in the schematic cross-sectional view corresponding to (b), if the taper angles θ(32B2), θ(2PaB2), and θ(12B1) of the side surfaces of the lead wiring 32B2, the inorganic protective layer 2PaB2, and the first inorganic barrier layer 12B2 are 90° or greater, an organic barrier layer (solid portion) 14B2 is formed along the side surface of the first inorganic barrier layer 12B2 of the TFE structure 10B2 and between the first inorganic barrier layer 12B2 and the second inorganic barrier layer 16B2. Furthermore, the OLED display device 100B2 may also be configured such that the taper angles θ(32) of the side surfaces of the lead wiring 32 and θ(12) of the side surfaces of the first inorganic barrier layer 12 in the OLED display device 100 of the embodiment are changed to 90° or greater.

[0076] The OLED display device 100B2 is different from the OLED display device 100B1 and includes an inorganic protective layer 2PaB2. Therefore, the cone angle θ(12B2) of the side surface of the first inorganic barrier layer 12B2 is likely to be smaller than the cone angle θ(12B1) of the side surface of the first inorganic barrier layer 12B1 of the OLED display device 100B1.

[0077] Figure 4(b)–(d) show that any of the taper angles θ(32), θ(2Pa), and θ(12) of the extraction wiring 32, the inorganic protective layer 2Pa, and the side surface of the first inorganic barrier layer 12 in the OLED display device 100 according to the embodiment of the present invention is less than 90°, and there is no case where the organic barrier layer 14 is formed along these side surfaces. Therefore, there is no case where moisture in the atmosphere reaches the active region R1 via the organic barrier layer (solid portion) 14, and excellent moisture resistance reliability can be achieved. Here, an example is shown where any of the taper angles θ(32), θ(2Pa), and θ(12) is less than 90°, but it is not limited thereto. If at least the taper angle θ(12) of the side surface of the first inorganic barrier layer 12 that constitutes the surface directly below the organic barrier layer 14 is less than 90°, then Figure 4 The laminated structure shown in (b) (the portion where the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact (the organic planarization layer 2Pa does not exist), and the portion where the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact (the organic barrier layer 14 does not exist)) is formed. Therefore, it is possible to suppress / prevent moisture in the atmosphere from invading the active region R1 via the organic planarization layer 2Pa or the organic barrier layer 14. In addition, by including the inorganic protective layer 2Pa, the taper angle θ(12) of the first inorganic barrier layer 12 can be reduced. Therefore, even if the taper angle θ(32) of the extraction wiring 32 is large (for example, 90°), the taper angle θ(12) of the first inorganic barrier layer 12 can be set to less than 90°. That is, the taper angle θ(32) of the extraction wiring 32 can be set to 90° or close to 90°. Therefore, the advantage of being able to reduce the L / S of the extraction wiring 32 can be obtained.

[0078] In addition, in the range where the taper angle θ of the side surface is 70° or more and less than 90°, there is a case where the organic barrier layer (solid portion) 14 is formed along the side surface. Of course, if the ashing process is performed, the offset resin can be removed along the inclined side surface, but the time required for the ashing process becomes longer. For example, even after removing the resin formed on the flat surface, a long ashing process is also required. Or, as a result of the organic barrier layer (solid portion) formed around the particle P being overly ashed (removed), there may be a problem that the effect of forming the organic barrier layer is not fully exerted. To suppress / prevent this situation, the taper angle θ(12) of the first inorganic barrier layer 12 is preferably less than 70°, and more preferably less than 60°.

[0079] Next, with reference to Figures 6 to 8 , the structure of the OLED display device 100C of the comparative example will be described. Figure 6 Fig. shows a schematic plan view of the OLED display device 100C. Figure 7 (a) and (b) are schematic cross-sectional views of the OLED display device 100C, Figure 7(a) is a cross-sectional view taken along line 7A - 7A' in Figure 6 , and Figure 7 (b) is a cross-sectional view taken along line 7B - 7B' in Figure 6 . Figure 8 (a) - (c) are schematic cross-sectional views of the OLED display device 100C, Figure 8 (a) is a cross-sectional view taken along line 8A - 8A' in Figure 6 , Figure 8 (b) is a cross-sectional view taken along line 8B - 8B' in Figure 6 , Figure 8 (c) is a cross-sectional view taken along line 8C - 8C' in Figure 6 .

[0080] The OLED display device 100C is different from the OLED display device 100 of the embodiment at the point where the inorganic protective layer 2Pa is not included, and at the point where the organic planarization layer 2Pbc is extended to a region not covered by the TFE structure 10. In addition, for components substantially the same as those included in the OLED display device 100, the same reference numerals are attached, and the description is omitted.

[0081] For example, as is clear from Figure 6 , Figure 7 (b), and Figure 8 (b), a part of the organic planarization layer 2Pbc is exposed to the atmosphere (surrounding air). In this way, the organic planarization layer 2Pbc absorbs moisture from the exposed part and becomes a path for guiding water vapor in the atmosphere into the active region R1. In contrast, in the OLED display device 100 of the embodiment, as shown in Figure 3 (b) and Figure 4 (b), the organic planarization layer 2Pb and the OLED layer 3 are surrounded by the joint where the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact. Therefore, the above problems of the OLED display device 100C of the comparative example can be solved.

[0082] Next, with reference to Figure 9 and Figure 10 , examples of TFTs used in the OLED display device 100, and examples of pull-out wirings and terminals formed using the gate metal layer and the source metal layer when manufacturing the TFTs are described. In the following description, the structures of the TFTs, pull-out wirings, and terminals can be used in the OLED display device 100 of the above-described embodiment.

[0083] In a high-precision OLED display device for small and medium-sized applications, low-temperature polysilicon (abbreviated as "LTPS") TFTs or oxide TFTs (for example, quaternary (In-Ga-Zn-O system) oxide TFTs containing In (indium), Ga (gallium), Zn (zinc), and O (oxygen)) with high mobility can be suitably used. Since the structures and manufacturing methods of LTPS-TFTs and In-Ga-Zn-O system TFTs are well-known, simple descriptions are retained below.

[0084] Figure 9 (a) is a schematic cross-sectional view of LTPS-TFT2 P T, and TFT2 P T can be included in the circuit 2 of the OLED display device 100. LTPS-TFT2 P T is a top-gate type TFT.

[0085] TFT2 P T is formed on the undercoat 2 P p on the substrate (for example, polyimide film) 1. In the above description, it is omitted, and preferably, an undercoat formed of an inorganic insulator is formed on the substrate 1.

[0086] TFT2 P T includes a polysilicon layer 2 P se formed on the undercoat 2 P se, a gate insulating layer 2 P gi formed on the polysilicon layer 2 P gi, a gate electrode 2 P g formed on the gate insulating layer 2 P g, an interlayer insulating layer 2 P i formed on the gate electrode 2 P i, and a source electrode 2 P i formed on the interlayer insulating layer 2 P ss and a drain electrode 2 P sd. The source electrode 2 P ss and the drain electrode 2 P sd are formed in the contact holes of the interlayer insulating layer 2 P i and the gate insulating layer 2 P gi and are respectively connected to the source region and the drain region of the polysilicon layer 2 P se.

[0087] The gate electrode 2 P g is included in the same gate metal layer as the gate bus, and the source electrode 2 P ss and the drain electrode 2 PThe sd is included in the same source metal layer as the source bus. Using the gate metal layer and the source metal layer, the pull-out wiring and terminals are formed (refer to Figure 10 and described later).

[0088] TFT2 P T, for example, is fabricated as follows.

[0089] As the substrate 1, for example, a polyimide film with a thickness of 15 μm is prepared.

[0090] The undercoat 2 P p(SiO2 film: 250 nm / SiN x film: 50 nm / SiO2 film: 500 nm (upper layer / middle layer / lower layer)) and an a-Si film (40 nm) are formed by plasma chemical vapor deposition.

[0091] The dehydrogenation treatment of the a-Si film is performed (e.g., annealing at 450 °C for 180 minutes).

[0092] The a-Si film is polycrystallized by excimer-laser annealing (ELA).

[0093] The a-Si film is patterned by a photolithography process to form the active layer (semiconductor island).

[0094] The gate insulating film (SiO2 film: 50 nm) is formed by plasma chemical vapor deposition.

[0095] Doping (B+) is performed in the channel region of the active layer.

[0096] The gate metal (Mo: 250 nm) is formed by sputtering and patterned by a photolithography process (including a dry etching process) (to form the gate electrode 2 P g and the gate bus, etc.).

[0097] Doping (P+) is performed in the source region and the drain region of the active layer.

[0098] Activation annealing is performed (e.g., annealing at 450 °C for 45 minutes). In this way, the polysilicon layer 2 P se can be obtained.

[0099] The interlayer insulating film (SiO2 film: 300 nm / SiN x film: 300 nm (upper layer / lower layer)) is formed by plasma chemical vapor deposition.

[0100] Contact holes are formed in the gate insulating film and the interlayer insulating film by dry etching. In this way, the interlayer insulating film 2 can be obtained. P i and the gate insulating film 2 P gi.

[0101] The source metal (Ti film: 100 nm / Al film: 300 nm / Ti film: 30 nm) is formed by sputtering and patterned (to form the source electrode 2 P ss, the drain electrode 2 P sd and the source bus, etc.) through a photolithography process (including a dry etching process).

[0102] Thereafter, the above-mentioned inorganic protective layer 2Pa is formed (refer to Figure 2 and Figure 3 ).

[0103] Figure 9 (b) is a schematic cross-sectional view of an In-Ga-Zn-O-based TF2 O T, and the TFT2 O T can be included in the circuit 2 of the OLED display device 100A. The TFT2 O T is a bottom-gate type TFT.

[0104] The TFT2 O T is formed on the undercoat 2 O p on the substrate (e.g., polyimide film) 1. The TFT2 O T includes a gate electrode 2 O p formed on the undercoat 2 O g, a gate insulating layer 2 O gi formed on the gate electrode 2 O g, an oxide semiconductor layer 2 O gi formed on the gate insulating layer 2 O se, a source electrode 2 O se respectively connected to the source region and the drain region of the oxide semiconductor layer 2 O ss and a drain electrode 2 O sd. The source electrode 2 O ss and the drain electrode 2 O sd are covered by the interlayer insulating layer 2 O i.

[0105] The gate electrode 2 O g is included in the same gate metal layer as the gate bus, and the source electrode 2 O ss and the drain electrode 2 O sd are included in the same source metal layer as the source bus. Using the gate metal layer and the source metal layer, pull-out wirings and terminals are formed, refer to Figure 10Instead, the structure described below may be included.

[0106] TFT2 O T is produced, for example, as follows.

[0107] As the substrate 1 , for example, a polyimide film having a thickness of 15 μm is prepared.

[0108] Apply primer 2 O p(SiO2 film: 250nm / SiN x Film: 50nm / SiO2 film: 500nm (upper layer / middle layer / lower layer)) was formed by plasma chemical vapor deposition.

[0109] The gate metal (Cu film: 300 nm / Ti film: 30 nm (upper layer / lower layer)) was deposited by sputtering and patterned by photolithography (including dry etching) to form the gate electrode 2 O g and gate bus, etc.).

[0110] The gate insulating film (SiO2 film: 30nm / SiN x Film: 350 nm (upper layer / lower layer) was formed by plasma chemical vapor deposition.

[0111] An oxide semiconductor film (In—Ga—Zn—O-based semiconductor film: 100 nm) was deposited by sputtering and patterned by a photolithography process (including a dry etching process) to form an active layer (semiconductor island).

[0112] The source metal (Ti film: 100 nm / Al film: 300 nm / Ti film: 30 nm (upper layer / middle layer / lower layer)) was deposited by sputtering and patterned by photolithography (including dry etching) to form the source electrode 2 O ss, drain electrode 2 P sd and source bus, etc.).

[0113] Activation annealing is performed (for example, annealing at 300° C. for 120 minutes). In this way, the oxide semiconductor layer 2 can be obtained. O se.

[0114] Thereafter, the interlayer insulating film 2 is formed as a protective film. O i (e.g., SiN x Film: 300nm / SiO2 film: 300nm (upper layer / lower layer)) is formed by plasma chemical vapor deposition. O i, can also serve as the above-mentioned inorganic protective layer 2Pa (refer to Figure 2 as well as Figure 3 ). Of course, in the interlayer insulating film 2 OOn top of i, an inorganic protective layer 2Pa may further be formed.

[0115] Next, referring to Figure 10 (a) to (c), the structure of another OLED display device according to the embodiment will be described. The circuit (backplane) 2 of this OLED display device includes Figure 9 the TFT2 shown in (a) P T or Figure 9 the TFT2 shown in (b) O T. The pull-out wiring 32A and the terminal 34A are formed using the gate metal layer and the source metal layer when manufacturing the TFT2 P T or TFT2 O T. Figure 10 (a) to (c) respectively correspond to Figure 4 (b) to (d). The reference numerals of the corresponding components are appended with "A". Additionally, Figure 10 the undercoat 2p in Figure 9 corresponds to the undercoat 2 p p and Figure 9 the undercoat 2 O p in (a), Figure 10 the gate insulating layer 2gi in Figure 9 corresponds to the gate insulating layer 2 P gi and Figure 9 the gate insulating layer 2 O gi in (a), Figure 10 the interlayer insulating layer 2i in Figure 9 corresponds to the interlayer insulating layer 2 P i and Figure 9 the interlayer insulating layer 2 O i in (a).

[0116] As Figure 10 shown in (a) to (c), the gate metal layer 2g and the source metal layer 2s are formed on the undercoat 2p already formed on the substrate 1. In Figure 3 and Figure 4 are omitted, but it is preferable to form an undercoat 2p made of an inorganic insulator on the substrate 1.

[0117] As Figure 10As shown in (a) to (c), the pull-out wiring 32A and the terminal 34A are formed as a laminate of the gate metal layer 2g and the source metal layer 2s. The portion of the pull-out wiring 32A and the terminal 34A formed of the gate metal layer 2g, for example, has the same cross-sectional shape as the gate bus, and the portion of the pull-out wiring 32A and the terminal 34A formed of the source metal layer 2s, for example, has the same cross-sectional shape as the source bus. For example, in the case of a 5.7-inch display device with 500 ppi, the line width of the portion formed of the gate metal layer 2g is, for example, 10 μm, and the adjacent distance is 16 μm (L / S = 10 / 16). The line width of the portion formed of the source metal layer 2s is, for example, 16 μm, and the adjacent distance is 10 μm (L / S = 16 / 10). The conical angles θ are all less than 90°, preferably less than 70°, and more preferably 60° or less. In addition, the conical angle of the portion formed under the organic planarization layer Pb may be 90° or more.

[0118] Next, with reference to Figure 11 (a) and (b), a film forming apparatus 200 used for forming an organic barrier layer and a film forming method using the same will be described. Figure 11 (a) and (b) are diagrams schematically showing the configuration of the film forming apparatus 200. Figure 11 (a) shows the state of the film forming apparatus 200 in the process of condensing a photocurable resin on the first inorganic barrier layer in a chamber containing a vapor or mist of the photocurable resin. Figure 11 (b) shows the state of the film forming apparatus 200 in the process of irradiating the photocurable resin with photosensitive light to cure the photocurable resin.

[0119] The film forming apparatus 200 includes a chamber 210 and a partition wall 234 that divides the interior of the chamber 210 into two spaces. In one space separated by the partition wall 234 inside the chamber 210, a stage 212 and a shower plate 220 are arranged. In the other space separated by the partition wall 234, an ultraviolet irradiation device 230 is arranged. The chamber 210 controls the internal space to a predetermined pressure (vacuum degree) and temperature. The stage 212 includes an upper surface that accommodates the element substrate 20 including a plurality of OLEDs 3 on which the first inorganic barrier layer has been formed, and the upper surface can be cooled to, for example, -20°C.

[0120] The shower plate 220 is arranged to form a gap 224 between the shower plate 220 and the partition wall 234, and includes a plurality of through holes 222. The vertical dimension of the gap 224 can be, for example, greater than 100 mm and less than 1000 mm. The acrylic monomer (vapor or mist) supplied to the gap 224 is supplied to the space on the side of the carrier 212 in the chamber 210 from the plurality of through holes 222 of the shower plate 220. The acrylic monomer is heated as required. The vapor or mist acrylic monomer 26p adheres to or contacts the first inorganic barrier layer of the element substrate 20. The acrylic monomer 26 is supplied from the container 202 to the chamber 210 at a predetermined flow rate. The acrylic monomer 26 is supplied to the container 202 via the pipe 206, and nitrogen is supplied from the pipe 204. The flow rate of the acrylic monomer to the container 202 is controlled by a mass flow controller 208. The raw material supply device is composed of a shower plate 220 , a container 202 , pipes 204 and 206 , and a mass flow controller 208 .

[0121] The ultraviolet irradiation device 230 includes an ultraviolet light source and optional optical elements. The ultraviolet light source can be, for example, an ultraviolet lamp (e.g., a mercury lamp (including high-pressure and ultra-high-pressure), a mercury xenon arc lamp, or a metal halide lamp). The optical elements can be, for example, reflectors, prisms, lenses, and diffraction elements.

[0122] When the ultraviolet irradiation device 230 is placed at a predetermined position, light having a predetermined wavelength and intensity is emitted toward the upper surface of the stage 212. The partition wall 234 and the shower plate 220 are preferably formed of a material with high ultraviolet transmittance, such as quartz.

[0123] The organic barrier layer 14 can be formed, for example, as follows using the film forming apparatus 200. Here, an example in which an acrylic monomer is used as the photocurable resin will be described.

[0124] Acrylic monomer 26p is supplied to chamber 210. Element substrate 20 is cooled to, for example, -15°C on stage 212. Acrylic monomer 26p condenses on first inorganic barrier layer 12 of element substrate 20. By controlling the conditions at this time, the liquid acrylic monomer can be concentrated only around the protrusions of first inorganic barrier layer 12. Alternatively, the conditions can be controlled so that the condensed acrylic monomer forms a liquid film on first inorganic barrier layer 12.

[0125] Adjust the viscosity and / or surface tension of the liquid photocurable resin, whereby the thickness of the liquid film and the shape (concave shape) of the portion in contact with the convex portion of the first inorganic barrier layer 12 can be controlled. For example, the viscosity and surface tension depend on temperature, so by adjusting the temperature of the element substrate, it can be controlled. For example, the size of the solid portion on the flat portion, the shape (concave shape) of the portion in contact with the convex portion of the first inorganic barrier layer 12D of the liquid film, and the conditions of the ashing process performed later can be controlled thereby.

[0126] Next, using an ultraviolet irradiation device 230U, typically, ultraviolet rays 232 are irradiated to the entire upper surface of the element substrate 20, whereby the acrylic monomer on the first inorganic barrier layer 12 is cured. As the ultraviolet light source, for example, a high-pressure mercury lamp having a main peak at 365 nm is used. As the ultraviolet light source, for example, it is irradiated at 12 mW / cm 2 , for about 10 seconds.

[0127] The organic barrier layer 14 made of an acrylic resin is thus formed. The operation time (tact time) of the forming process of this organic barrier layer 14 is, for example, less than about 30 seconds, and the mass productivity is very high.

[0128] After curing the liquid film-like photocurable resin, through an ashing process, an organic barrier layer 14 can also be formed only around the convex portion. In addition, when the offset photocurable resin is cured to form the organic barrier layer 14, an ashing process can also be applied. By the ashing process, the adhesiveness between the organic barrier layer 14 and the second inorganic barrier layer 16 can be improved. That is, the ashing process is not only for removing the excess portion of the once-formed organic barrier layer, but can also be used to modify (hydrophilize) the surface of the organic barrier layer 14.

[0129] Ashing can be performed using a known plasma ashing device, photoexcitation ashing device, or UV ozone ashing device. For example, plasma ashing using at least one gas among N2O, O2, and O3, or these can be further combined with ultraviolet irradiation for performing. In the case where the SiN x film is formed by chemical vapor deposition as the first inorganic barrier layer 12 and the second inorganic barrier layer 16, N2O is used as the source gas. Therefore, if N2O is used for ashing, the advantage of simplifying the device can be obtained.

[0130] When ashing is performed, the surface of the organic barrier layer 14 is oxidized and modified to be hydrophilic. In addition, the surface of the organic barrier layer 14 is almost uniformly cut, and extremely fine irregularities are formed, increasing the surface area. The surface area increasing effect during ashing is larger for one of the surfaces of the organic barrier layer 14 than for the inorganic material, that is, the first inorganic barrier layer 12. Therefore, the surface of the organic barrier layer 14 is modified to be hydrophilic and the surface area is increased, thus improving the adhesion to the second inorganic barrier layer 16.

[0131] Thereafter, it is transferred to a chemical vapor deposition chamber for forming the second inorganic barrier layer 16. For example, under the same conditions as the first inorganic barrier layer 12, the second inorganic barrier layer 16 is formed. Since the second inorganic barrier layer 16 is formed in the region where the first inorganic barrier layer 12 is formed, an inorganic barrier layer joint where the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact is formed in the non-solid portion of the organic barrier layer 14. Therefore, as described above, the state where water vapor in the atmosphere reaches the active region through the organic barrier layer is suppressed / prevented.

[0132] In addition, the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are formed as follows, for example. In plasma chemical vapor deposition using SiH4 and N2O gases, for example, in a state where the temperature of the substrate (OLED3) to be film-formed is controlled below 80°C, an inorganic barrier layer with a thickness of 400 nm can be formed at a film-forming rate of 400 nm / min. The refractive index of the inorganic barrier layer thus obtained is 1.84, and the transmittance of visible light of 400 nm is 90% (thickness 400 nm). In addition, the absolute value of the film stress is 50 MPa.

[0133] In addition, as the inorganic barrier layer, in addition to the SiN x layer, a SiO2 layer, SiO x N y (x > y) layer, SiN x O y (x > y) layer, Al2O3 layer, etc. can also be used. The photocurable resin contains, for example, a vinyl-containing monomer. Among them, acrylic monomers are suitably used. If necessary, a photoinitiator can be mixed into the acrylic monomer. Various known acrylic monomers can be used. Multiple acrylic monomers can also be mixed. For example, a bifunctional monomer and a polyfunctional monomer with three or more functions can be mixed. In addition, an oligomer can also be mixed. The viscosity of the photocurable resin at room temperature (e.g., 25°C) before curing is preferably not more than 10 Pa·s, and particularly preferably 1 to 100 mPa·s. If the viscosity is high, it will be difficult to form a thin liquid film with a thickness of 500 nm or less.

[0134] In the above, embodiments of an OLED display device including a flexible substrate and a method for manufacturing the same have been described. However, the embodiments of the present invention are not limited to those illustrated, and can be widely applied to an organic EL device (for example, an organic EL lighting device) including an organic EL element formed on a substrate that does not have flexibility (for example, a glass substrate) and a thin film encapsulation structure formed on the organic EL element.

[0135] Industrial Applicability

[0136] Embodiments of the present invention are used in an organic EL device and a method for manufacturing the same. Embodiments of the present invention are particularly suitably used in a flexible organic EL display device and a method for manufacturing the same.

[0137] Explanation of Reference Numerals

[0138] 1 Flexible substrate

[0139] 2 Backplane (circuit)

[0140] 3 Organic EL element

[0141] 4 Polarizing plate

[0142] 10 Thin film encapsulation structure (TFE structure)

[0143] 12 First inorganic barrier layer (SiN x layer)

[0144] 14 Organic barrier layer (acrylic resin layer)

[0145] 16 Second inorganic barrier layer (SiN x layer)

[0146] 20 Element substrate

[0147] 26 Acrylic monomer

[0148] 26p Vapor or mist of acrylic monomer

[0149] 100, 100C Organic EL display device

[0150] 200 Film forming apparatus

Claims

1. A method for manufacturing an organic EL device, characterized in that: The organic EL device has: A substrate; A driving circuit layer, which includes a plurality of TFTs formed on the substrate, a plurality of gate buses and a plurality of source buses respectively connected to any one of the plurality of TFTs, a plurality of terminals, and a plurality of pull-out wirings connecting any one of the plurality of terminals and any one of the plurality of gate buses or the plurality of source buses; An inorganic protective layer, which is formed on the driving circuit layer and at least exposes the plurality of terminals; An organic planarization layer, which is formed on the inorganic protective layer; An organic EL element layer, which is formed on the organic planarization layer and includes a plurality of organic EL elements respectively connected to any one of the plurality of TFTs; And A thin film encapsulation structure, which is formed so as to cover the organic EL element layer and includes a first inorganic barrier layer, an organic barrier layer in contact with the upper surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with the upper surface of the organic barrier layer, and the organic barrier layer is formed in an area surrounded by an inorganic barrier layer joint where the first inorganic barrier layer and the second inorganic barrier layer are in direct contact; wherein When viewed from the normal direction of the substrate, in the area where the inorganic protective layer is formed, the organic planarization layer is formed, in the area where the organic planarization layer is formed, the plurality of organic EL elements are arranged, the outer edge of the thin film encapsulation structure intersects with the plurality of pull-out wirings, and exists between the outer edge of the organic planarization layer and the outer edge of the inorganic protective layer; In a part where the inorganic protective layer and the first inorganic barrier layer are in direct contact above the plurality of pull-out wirings, the conical angle of the side surface in the shape of the cross section of the first inorganic barrier layer parallel to the line width direction of the plurality of pull-out wirings is less than 90°; The manufacturing method includes: A step of forming the driving circuit layer on the substrate; A step of forming the inorganic protective layer on the driving circuit layer; A step of forming the organic planarization layer on the inorganic protective layer; A step of forming the organic EL element layer on the organic planarization layer.

2. The manufacturing method according to claim 1, characterized in that, The manufacturing method includes: After the step of forming the organic EL element layer, a step of selectively forming the first inorganic barrier layer in the active region where the plurality of organic EL elements are formed; After the step of forming the first inorganic barrier layer, a step of disposing the substrate in a chamber and supplying vapor or mist of a photocurable resin into the chamber; A step of condensing the photocurable resin on the first inorganic barrier layer so that the photocurable resin does not exist on a part of the first inorganic barrier layer where the conical angle is less than 90°; A step of irradiating light on the condensed photocurable resin to form the organic barrier layer composed of the photocurable resin.

3. The manufacturing method according to claim 1, characterized in that, The manufacturing method includes: After the step of forming the organic EL element layer, a step of selectively forming the first inorganic barrier layer in the active region where the plurality of organic EL elements are formed; After the step of forming the first inorganic barrier layer, a step of disposing the substrate in a chamber and supplying vapor or mist of a photocurable resin into the chamber; A step of condensing the photocurable resin on the first inorganic barrier layer to form a liquid film; A step of irradiating light to the liquid film of the photocurable resin to form a photocured resin layer; A step of ashing the photocured resin layer to form the organic barrier layer around the convex portion on the first inorganic barrier layer.

4. A thin film encapsulation structure forming apparatus for manufacturing an organic EL device, the organic EL device having: A substrate; A driving circuit layer including a plurality of TFTs formed on the substrate, a plurality of gate buses respectively connected to any one of the plurality of TFTs, a plurality of source buses, a plurality of terminals, and a plurality of pull-out wirings connecting any one of the plurality of terminals and any one of the plurality of gate buses or the plurality of source buses; An inorganic protective layer formed on the driving circuit layer, at least exposing the plurality of terminals; An organic planarization layer formed on the inorganic protective layer; An organic EL element layer formed on the organic planarization layer and including a plurality of organic EL elements respectively connected to any one of the plurality of TFTs; And A thin film encapsulation structure formed to cover the organic EL element layer and including a first inorganic barrier layer, an organic barrier layer in contact with the upper surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with the upper surface of the organic barrier layer, the organic barrier layer being formed in a region surrounded by an inorganic barrier layer joint where the first inorganic barrier layer and the second inorganic barrier layer are in direct contact, wherein When viewed from the normal direction of the substrate, in the region where the inorganic protective layer is formed, the organic planarization layer is formed, and in the region where the organic planarization layer is formed, the plurality of organic EL elements are disposed, the outer edge of the thin film encapsulation structure intersects the plurality of pull-out wirings and exists between the outer edge of the organic planarization layer and the outer edge of the inorganic protective layer; In a portion where the inorganic protective layer and the first inorganic barrier layer are in direct contact above the plurality of pull-out wirings, the conical angle of the side in the shape of a cross-section of the first inorganic barrier layer parallel to the line width direction of the plurality of pull-out wirings is less than 90°; The thin film encapsulation structure forming apparatus is characterized in that it includes a film forming apparatus and a CVD apparatus; The film forming apparatus includes: A chamber; A stage disposed in the chamber and accommodating an element substrate having the driving circuit layer, the inorganic protective layer, the organic planarization layer, the organic EL element layer, and the first inorganic barrier layer on the stage, and the temperature of the upper surface of the stage accommodating the element substrate can be cooled to -20°C to -15°C; A raw material supply device capable of supplying vapor or mist of a photocurable resin into the chamber; and An ultraviolet irradiation device that can irradiate ultraviolet rays onto the element substrate and, above the first inorganic barrier layer, irradiate the ultraviolet rays onto the photocurable resin in a state where the photocurable resin is condensed such that the photocurable resin does not exist above a portion of the first inorganic barrier layer having a cone angle of less than 90°, thereby forming an organic thin film as the organic barrier layer. The CVD device is arranged in the subsequent stage of the film forming device and forms an inorganic thin film as the second inorganic barrier layer.

5. A film sealing structure forming device for manufacturing an organic EL device, the organic EL device having: a substrate; a driving circuit layer including a plurality of TFTs formed on the substrate, a plurality of gate buses and a plurality of source buses respectively connected to any one of the plurality of TFTs, a plurality of terminals, and a plurality of pull-out wirings connecting any one of the plurality of terminals and any one of the plurality of gate buses or the plurality of source buses; an inorganic protective layer formed on the driving circuit layer and at least exposing the plurality of terminals; an organic planarization layer formed on the inorganic protective layer; an organic EL element layer formed on the organic planarization layer and including a plurality of organic EL elements respectively connected to any one of the plurality of TFTs; and a film sealing structure formed to cover the organic EL element layer and including a first inorganic barrier layer, an organic barrier layer in contact with the upper surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with the upper surface of the organic barrier layer, the organic barrier layer being formed in a region surrounded by an inorganic barrier layer joint where the first inorganic barrier layer and the second inorganic barrier layer are in direct contact, wherein when viewed from the normal direction of the substrate, in the region where the inorganic protective layer is formed, the organic planarization layer is formed, in the region where the organic planarization layer is formed, the plurality of organic EL elements are arranged, the outer edge of the film sealing structure intersects the plurality of pull-out wirings, and exists between the outer edge of the organic planarization layer and the outer edge of the inorganic protective layer; in a portion where the inorganic protective layer and the first inorganic barrier layer are in direct contact above the plurality of pull-out wirings, the cone angle of the side in the shape of the cross-section of the first inorganic barrier layer parallel to the line width direction of the plurality of pull-out wirings is less than 90°; the film sealing structure forming device is characterized in that it includes a film forming device, an ashing device, and a CVD device; the film forming device includes: a chamber; a stage arranged in the chamber and accommodating an element substrate having the driving circuit layer, the inorganic protective layer, the organic planarization layer, the organic EL element layer, and the first inorganic barrier layer on the stage, and the temperature of the upper surface of the stage accommodating the element substrate can be cooled to -20°C to -15°C; a raw material supply device capable of supplying vapor or mist-like photocurable resin into the chamber; and An ultraviolet irradiation device that can irradiate ultraviolet rays onto the element substrate, and above the first inorganic barrier layer, a photocurable resin layer is formed by irradiating ultraviolet rays onto a liquid film that causes the photocurable resin to coagulate. The ashing device is arranged at the rear stage of the film forming device, and an organic thin film serving as the organic barrier layer is formed by performing plasma ashing on the organic thin film on the element substrate using N2O gas. The CVD device is arranged at the subsequent stage of the ashing device to form an inorganic thin film serving as the second inorganic barrier layer.

Images