A plasma jet electromagnetic control system

Abstract

The present invention discloses a plasma jet electromagnetic control system, comprising: a generating module for generating and emitting a plasma jet; a processing module, provided with a processing chamber for receiving the plasma jet, and configured to form a first magnetic field in the same direction as the plasma jet direction in the processing chamber, a first electric field whose direction can be switched forward and backward and parallel to the plasma jet direction, and a second magnetic field whose direction is perpendicular to the first electric field direction, and a second electric field whose direction can be switched forward and backward and perpendicular to the first electric field direction; an exhaust part for discharging plasma and a window part for taking and placing a processed object are provided at the wall surface of the processing chamber; and a control module, which is electrically connected to the generating module and the processing module respectively. In the present invention, the first magnetic field increases the axial propagation intensity of the plasma jet, the first electric field controls the propagation length, the second electric field controls the offset in the front-rear direction, and the second magnetic field controls the offset in the left-right direction, and the electromagnetic fields do not interfere with each other.

Description

Technical Field

[0001] The invention relates to the field of plasma technology, and in particular to a plasma jet electromagnetic control system. Background Art

[0002] Atmospheric pressure cold plasma jets are rich in high-energy electrons, free radicals and other reactive substances, and have strong physical, chemical and biological functions and activities. Plasma jets are conducive to the transfer of active substances, and the treated objects are not restricted by geometric shape and size, making plasma jets effective in the fields of material surface modification, water treatment, sterilization and disinfection.

[0003] In the prior art, after the plasma jet is ejected from the dielectric tube, it is impossible to control the propagation direction of the plasma jet and its horizontal displacement, resulting in the inability of the plasma jet to deflect. Due to the volume of the discharge device, after the plasma jet is ejected from the dielectric tube, its processing area is only a few square millimeters. Such a small processing area is difficult to cover the surface of the treated object, reducing the uniformity and efficiency of the surface treatment. Increasing the number of plasma jets will greatly increase the process cost.

[0004] Therefore, how to flexibly control the propagation direction and length of the plasma jet according to the actual size of the object being processed, improve the processing flexibility and increase the processing area, is a key technical issue in the field of plasma. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the purpose of the present invention is to provide a plasma jet electromagnetic control system to solve the problems of poor adjustability and low processing flexibility of the plasma jet during propagation in the prior art.

[0006] In order to achieve the above object, the present invention adopts the following technical scheme:

[0007] The present application provides a plasma jet electromagnetic control system, which is characterized by comprising:

[0008] A generating module, used for generating and emitting a plasma jet;

[0009] A processing module is provided with a processing chamber for receiving the plasma jet, and is configured to form a first magnetic field in the same direction as the plasma jet direction, a first electric field whose direction can be switched forward and reverse and parallel to the plasma jet direction, a second magnetic field whose direction is perpendicular to the first electric field direction, and a second electric field whose direction can be switched forward and reverse and perpendicular to the first electric field direction in the processing chamber; an exhaust portion for discharging the plasma and a window portion for taking and placing a processed object are provided on the wall surface of the processing chamber;

[0010] The control module is electrically connected to the generating module and the processing module respectively.

[0011] In some embodiments, at least one heat source and a temperature sensor are further disposed in the processing chamber, and the heat source and the temperature sensor are electrically connected to the control module respectively.

[0012] In some embodiments, the process chamber is between ninety-five percent and ninety-nine percent airtight.

[0013] In some embodiments, at least a portion of the wall of the processing chamber constitutes a first wall, a second wall, a third wall, a fourth wall, a fifth wall, and a sixth wall;

[0014] The first wall surface and the second wall surface are parallel and respectively located at the upper side and the lower side of the processing chamber, and the first wall surface and the second wall surface are used to form the first magnetic field and the first electric field;

[0015] The third wall surface and the fourth wall surface are parallel and respectively located at the front side and the rear side of the processing chamber, the third wall surface and the fourth wall surface are perpendicular to the first wall surface and the second wall surface, and the third wall surface and the fourth wall surface are used to form the second magnetic field and the second electric field;

[0016] The fifth wall surface and the sixth wall surface are parallel and respectively located at the left and right sides of the processing chamber. The fifth wall surface and the sixth wall surface are perpendicular to the first wall surface and the second wall surface. The fifth wall surface is provided with an exhaust portion, and the sixth wall surface is provided with a window portion.

[0017] In some embodiments, the first wall is provided with a connecting through hole, at least a portion of the generating module is inserted into the connecting through hole, and a first spiral coil is embedded in the hole wall of the connecting through hole;

[0018] The inner surface or outer surface of the first wall is tightly connected with a first metal plate electrode layer, the first metal plate electrode layer has an opening in a region corresponding to the connecting through hole, and the inner surface or outer surface of the second wall is tightly connected with a second metal plate electrode layer.

[0019] In some embodiments, the outer surfaces of the third wall and the fourth wall are provided with horizontal magnetron modules, and the horizontal magnetron modules are sequentially stacked with a heating wire layer, a second insulating film layer, a third metal plate electrode layer, a third insulating film layer and a second spiral coil from the inside to the outside, and the third wall and the fourth wall are made of insulating medium, and the heating wire layer, the third metal plate electrode layer and the second spiral coil are electrically connected to the control module respectively.

[0020] In some embodiments, a yoke unit is provided in the second spiral coil.

[0021] In some embodiments, the second wall surface, the third wall surface, and the fourth wall surface are respectively movably connected to the first wall surface.

[0022] In some embodiments, the generating module includes a gas storage tank, a flow controller, an insulating medium tube and at least one high-voltage electrode, the gas storage tank is connected to the flow controller via an air pipe, the flow controller is connected to the tube wall of the insulating medium tube, at least a portion of the insulating medium tube is inserted into the connecting through hole, and the high-voltage electrode is connected to the insulating medium tube and electrically connected to the control module.

[0023] In some embodiments, the high-voltage electrode is a metal electrode needle inserted into the insulating medium tube and coincident with its central axis, or a metal electrode ring tightly fitted to the outer wall of the insulating medium tube, or a combination of the metal electrode needle and the metal electrode ring.

[0024] Compared with the prior art, the present invention has at least the following beneficial effects:

[0025] The plasma jet electromagnetic control system provided in the embodiment of the present application generates and emits a plasma jet by a generating module, and the plasma jet is vertically injected into the processing chamber. Through a first magnetic field in the same direction as the plasma jet, the electrons are constrained in the axial magnetic field lines by the Lorentz force, thereby reducing the collision and recombination of the electrons with the circumferential insulating medium tube, and increasing the axial propagation intensity of the plasma jet.

[0026] By switching the positive and negative directions of the first electric field, the propagation length of the plasma jet is controlled in a dimension parallel to the direction of the plasma jet;

[0027] In the horizontal direction, a second magnetic field and a second electric field perpendicular to the direction of the first electric field are formed respectively. By adjusting the direction of the positive pole in the second electric field, the offset of the plasma jet in the front-to-back direction is controlled. By adjusting the positions of the N and S poles in the second magnetic field, the offset of the plasma jet in the left-to-right direction is controlled.

[0028] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The present invention is further described using the accompanying drawings, but the embodiments in the accompanying drawings do not constitute any limitation to the present invention. A person skilled in the art can obtain other drawings based on the following drawings without creative work.

[0030] Figure 1 The present invention is a schematic diagram of the system structure of a surface discharge plasma magnetron system in one embodiment.

[0031] Figure 2 It is a schematic diagram of the structure of a guide magnetic field generating module in one embodiment.

[0032] Figure 3 The present invention is a schematic diagram of the structure of a ground electrode layer in a dielectric barrier surface discharge component in one embodiment.

[0033] Figure 4 yes Figure 1 The illustrated embodiment is a graph showing the change in magnetic field strength over time during application.

[0034] Figure 5 yes Figure 1 A schematic diagram of the change in magnetic field strength value of the illustrated embodiment during application.

[0035] Figure 6 yes Figure 1 A schematic diagram of the self-induced current distribution generated by the illustrated embodiment in application. DETAILED DESCRIPTION

[0036] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0038] In the description of the present invention, when it is described that a specific device is located between a first device and a second device, there may or may not be an intermediate device between the specific device and the first device or the second device. When it is described that a specific device is connected to other devices, the specific device may be directly connected to the other devices without an intermediate device, or may not be directly connected to the other devices but have an intermediate device.

[0039] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered part of the specification.

[0040] The inventors have discovered that when a processed object is subjected to plasma jet treatment, since the sizes of the processed objects vary and the processing cross-sectional area of ​​the plasma jet is only a few square millimeters, the prior art cannot adapt to processed objects of different sizes by controlling the direction and length of propagation of a single plasma jet.

[0041] In view of this, refer to Figure 1 This embodiment provides a plasma jet electromagnetic control system, characterized in that it includes:

[0042] A generating module 10 is used to generate and emit a plasma jet. The generating module 10 includes an insulating medium tube 13. The plasma jet is generated and emitted in the insulating medium tube 13;

[0043] The processing module 20 is provided with a processing chamber 21 for receiving a plasma jet, at least a portion of the insulating medium tube 13 is inserted into the processing chamber 21, and the plasma jet is vertically injected into the processing chamber 21. The processing module 20 is configured to form a first magnetic field in the same direction as the plasma jet direction, a first electric field whose direction can be switched forward and reverse and parallel to the plasma jet direction, a second magnetic field whose direction is perpendicular to the first electric field direction, and a second electric field whose direction can be switched forward and reverse and perpendicular to the first electric field direction in the processing chamber 21; an exhaust portion for discharging plasma and a window portion 22 for taking in and placing a processed object are provided on the wall surface of the processing chamber 21;

[0044] The control module 30 is electrically connected to the generating module 10 and the processing module 20 respectively. The control module 30 can input different types of power, including direct current and alternating current, into the generating module 10 and the processing module 20 respectively.

[0045] It should be noted that the window portion 22 can be opened and closed. After the window portion 22 is opened, the object to be processed is placed into the processing chamber 21 from the window portion 22, and then the window portion 22 is closed. The control module 30 is used to control the generating module 10 to be energized and generate a plasma jet. The plasma jet is vertically injected into the processing chamber 21 from the insulating medium tube 13. In the processing chamber 21, the electrons are constrained in the axial magnetic field lines by the Lorentz force through the first magnetic field in the same direction as the plasma jet direction, thereby reducing the collision and recombination of the electrons with the circumferential insulating medium tube 13 and increasing the axial propagation intensity of the plasma jet. The coverage range of the first magnetic field can be that it only exists in the processing chamber 21 and constrains the electron propagation convergence in the part of the insulating medium tube 13 extending into the processing chamber 21, or it can cover the entire insulating medium tube 13, so that the plasma is constrained to the axial magnetic field lines after being formed in the insulating medium tube 13. In short, the axial convergence and propagation intensity of the plasma jet in the insulating medium tube 13 can be controlled by the first magnetic field.

[0046] By switching the positive and negative directions of the first electric field, the propagation length of the plasma jet is controlled in the dimension parallel to the direction of the plasma jet. If the direction of the first electric field is the same as the direction of the plasma jet, the electrons in the plasma jet are affected by the positive voltage electrode located above, reducing the propagation length of the plasma jet. Conversely, if the direction of the first electric field is opposite to the direction of the plasma jet, the electrons in the plasma jet are affected by the positive voltage electrode located below, increasing the propagation length of the plasma jet. Therefore, by changing the direction of the current, the positive and negative directions of the first electric field are changed, thereby affecting the force on the electrons in the plasma jet and further controlling the propagation length.

[0047] No matter how the current of the first electric field changes, its direction is parallel to the direction of the plasma jet. In this embodiment, for the convenience of explanation, the direction of the plasma jet is designated as the vertical direction, and in the horizontal direction, the processing module 20 forms a second magnetic field and a second electric field perpendicular to the direction of the first electric field, respectively. Obviously, in the horizontal direction, there are multiple angles at which the second magnetic field and the second electric field can be set, such as in the front-to-back direction, the left-to-right direction, the oblique 45° direction, etc. For the convenience of explanation, the direction of the second electric field is designated as the front-to-back direction. By adjusting the direction of the positive pole in the second electric field, the displacement of the plasma jet in the front-to-back direction is controlled. When the front side is a positive voltage electrode, the electrons in the plasma jet are affected by the positive voltage electrode located on the front side, and the plasma jet is controlled to be deflected forward. Conversely, when the back side is a positive voltage electrode, the electrons in the plasma jet are affected by the positive voltage electrode located on the back side, and the plasma jet is controlled to be deflected backward.

[0048] By adjusting the positions of N and S levels in the second magnetic field, the left-right deviation of the plasma jet is controlled. When the front side is N level and the back side is S level, and the direction of the first electric field is the same as the direction of the plasma jet, under the action of the E×B electromagnetic field, according to the left-hand rule, the plasma jet is forced to the right, thereby controlling the plasma jet to deviate to the right. Conversely, when the front side is S level and the back side is N level, and the direction of the first electric field is the same as the direction of the plasma jet, the plasma jet is forced to the left, thereby controlling the plasma jet to deviate to the left.

[0049] The control module 30 controls the intensity and direction of the first magnetic field, the first electric field, the second magnetic field and the second electric field by controlling the magnitude and direction of the output voltage. The electromagnetic fields do not interfere with each other. Through the mutual cooperation of the electromagnetic fields, the plasma jet is adjusted up and down, front and back, left and right in all directions, and the full-angle control is completed. In particular, according to the shape and size of the processed object, the control module 30 can be manually set or automatically identified to divide the height of the processed object into several layers, first through the joint action of the first magnetic field and the first electric field, the propagation length of the plasma jet is constrained to be in the highest layer, and then through the sequential power-on action of the second magnetic field and the second electric field, the plasma jet is first offset forward and backward, and then offset left and right; after the set processing time, the propagation length of the plasma jet is switched to the second layer through the first magnetic field and the first electric field, and then the front and back and left and right directions are offset successively, and this is repeated until the bottom layer.

[0050] In this embodiment, in order to control the temperature in the processing chamber 21 and ensure the processing effect, at least one heat source and a temperature sensor are further provided in the processing chamber 21. The heat source and the temperature sensor are electrically connected to the control module 30 respectively. The control module 30 controls the output of the heat source according to the feedback value of the temperature sensor, and then controls the temperature in the processing chamber 21 within a set range. Furthermore, the heat source can be set on the top of the processing chamber 21, or on the front, back, left and right sides of the processing chamber 21. That is, the heat source on the top radiates the entire processing chamber 21 from top to bottom, which belongs to the vertical dimension. The heat source on the side radiates the entire processing chamber 21 from front to back or left to right, which belongs to the horizontal dimension. There are at least two vertical heat sources, so that when the object to be processed is processed from top to bottom using a plasma jet, the processing temperature of each layer height can be adjusted by segmented control of the side heat source, and the two vertical heat sources can better control the temperature in the processing chamber 21 and reduce the gradient attenuation of the temperature.

[0051] In this embodiment, since the plasma jet needs to process the object to be processed in the processing chamber 21, the sealing performance of the processing chamber 21 is good, and the plasma jet will continuously be injected into the processing chamber 21. Therefore, according to the flow rate of the plasma jet, the airtightness of the processing chamber 21 is between ninety-five percent and ninety-nine percent, and the gas in the processing chamber 21 mainly flows out from the exhaust part, thereby ensuring the concentration and pressure balance of the plasma in the processing chamber 21, wherein the exhaust part is a structure form of a gas nozzle for gas leakage.

[0052] As an embodiment, at least a portion of the wall surface of the processing chamber 21 constitutes a first wall surface 41, a second wall surface 42, a third wall surface 43, a fourth wall surface, a fifth wall surface, and a sixth wall surface 46;

[0053] The first wall 41 and the second wall 42 are parallel and respectively located at the upper side and the lower side of the processing chamber 21. The first wall 41 and the second wall 42 are used to form a first magnetic field and a first electric field. The insulating medium tube 13 of the generating module 10 is inserted into the first wall 41 from top to bottom. The directions of the first magnetic field and the first electric field are parallel to the direction of the plasma jet.

[0054] The third wall 43 and the fourth wall are parallel and are located at the front and rear sides of the processing chamber 21 respectively. The third wall 43 and the fourth wall are perpendicular to the first wall 41 and the second wall 42. The third wall 43 and the fourth wall are used to form a second magnetic field and a second electric field.

[0055] The fifth wall surface and the sixth wall surface 46 are parallel and are respectively located on the left and right sides of the processing chamber 21. The fifth wall surface and the sixth wall surface 46 are perpendicular to the first wall surface 41 and the second wall surface 42, and the fifth wall surface and the sixth wall surface 46 are perpendicular to the third wall surface 43 and the fourth wall surface. The fifth wall surface is provided with an exhaust portion, and the sixth wall surface 46 is provided with a window portion 22.

[0056] Of course, in other embodiments, the third wall 43 and the fourth wall for forming the second magnetic field and the second electric field can be located on the left and right sides of the processing chamber 21, while the fifth wall and the sixth wall 46 provided with the exhaust portion and the window portion 22 are located on the front and rear sides of the processing chamber 21.

[0057] Furthermore, the first wall 41 is provided with a connecting through hole 411, and at least a part of the generating module 10 is inserted into the connecting through hole 411, and the inserted part is the insulating medium tube 13. A first spiral coil 412 is embedded in the hole wall of the connecting through hole 411. After the DC power supply is passed through, the first spiral coil 412 forms a first magnetic field and a first thermal field; wherein, the connecting through hole 411 can be a through hole opened at the wall thickness of the first wall 41, and the wall thickness of the first wall 41 at the corresponding position can be a normal thickness or thickened, that is, a circular tube protrusion is provided at the connecting through hole 411, and the length of the circular tube protrusion is greater than the wall thickness of the first wall 41, so as to increase the setting length of the first spiral coil 412, and then control the intensity of the first magnetic field and the first thermal field from the hardware.

[0058] The inner surface or outer surface of the first wall 41 is tightly connected with the first metal plate electrode layer 413, and the first metal plate electrode layer 413 has an opening in the area corresponding to the connecting through hole 411. The inner surface or outer surface of the second wall 42 is tightly connected with the second metal plate electrode layer 421. When the first metal plate electrode layer 413 is connected to a positive voltage and the second metal plate electrode layer 421 is grounded, the direction of the first electric field formed is the same as the direction of the plasma jet, thereby reducing the axial propagation length of the plasma jet; when the first metal plate electrode layer 413 is grounded and the second metal plate electrode layer 421 is connected to a positive voltage, the direction of the first electric field formed is opposite to the direction of the plasma jet, thereby increasing the axial propagation length of the plasma jet.

[0059] In this embodiment, the outer surfaces of the third wall 43 and the fourth wall are both provided with a horizontal magnetron module 47, and the horizontal magnetron module 47 is stacked with a heating wire layer 471, a second insulating film layer 472, a third metal plate electrode layer 473, a third insulating film layer 474 and a second spiral coil 475 from the inside to the outside. The third wall 43 and the fourth wall are made of insulating medium, and the heating wire layer 471, the third metal plate electrode layer 473 and the second spiral coil 475 are respectively electrically connected to the control module 30, wherein the front and rear two heating wire layers 471 are used to form a second thermal field, the front and rear two third metal plate electrode layers 473 are used to form a second electric field, and the front and rear two second spiral coils 475 are used to form a second magnetic field, and the front and rear and left and right deviations of the plasma jet are controlled by changing the input voltage and current direction of the second electric field and the second magnetic field.

[0060] As an implementation manner, a yoke unit 476 is provided in the second spiral coil 475. The yoke unit 476 may be pure iron, which can better gather magnetic lines of force and enhance the magnetic field strength of the second magnetic field.

[0061] The fifth wall surface and the sixth wall surface 46 may be made of wave-transmitting and light-transmitting materials such as quartz glass, and are used to monitor the processing process of the plasma jet and measure and analyze the discharge products.

[0062] The first spiral coil 412 of the first wall 41, the third wall 43 and the heating wire layer 471 of the fourth wall are electrically connected to the control module 30, respectively. According to the intra-cavity temperature and the plasma jet temperature detected by the temperature sensor, under the control of the control module 30, the temperature of the plasma jet is controlled by adjusting the current of the first spiral coil 412, and the temperature of the processing chamber 21 is controlled by adjusting the current of the heating wire layer 471.

[0063] In this embodiment, the second wall 42, the third wall 43, and the fourth wall are respectively movably connected to the first wall 41. In the up and down directions, the distance between the first wall 41 and the second wall 42 can be adjusted, and in the front and back directions, the distance between the third wall 43 and the fourth wall can be adjusted, so as to adjust the field strengths of the first electric field, the second magnetic field, and the second electric field. Moreover, as the second wall 42 moves downward, the processing height of the plasma jet can be adjusted to adapt to processed objects of different sizes.

[0064] As an embodiment, the first wall 41, the second wall 42, the third wall 43, the fourth wall, the fifth wall and the sixth wall 46 together form a rectangular box-like structure, and the first wall 41, the second wall 42, the third wall 43, the fourth wall, the fifth wall and the sixth wall 46 constitute all the walls of the processing chamber 21.

[0065] As another embodiment, the first wall 41, the second wall 42, the third wall 43, the fourth wall, the fifth wall and the sixth wall 46 are only a part of the entire wall of the processing chamber 21. Different opposite walls are connected by a retractable and adjustable connecting part. The relative positions of different walls are adjusted by pulling and squeezing different walls. The connecting part can be a telescopic tube or a soft metal. All walls are part of a spherical sealing cover. Adjacent different walls are connected by a sealing cover to ensure the sealing of the outer surface.

[0066] In this embodiment, the generating module 10 includes a gas storage tank 11, a flow controller 12, an insulating medium tube 13 and at least one high-voltage electrode. The gas storage tank 11 is connected to the flow controller 12 through a gas pipe. The flow controller 12 is connected to the tube wall of the insulating medium tube 13. The flow controller 12 is used to control the gas flow input into the insulating medium tube 13. At least a portion of the insulating medium tube 13 is inserted into the connecting through hole 411. The insulating medium tube 13 is rigid and can be made of a quartz tube or a ceramic tube. The high-voltage electrode is connected to the insulating medium tube 13 and is electrically connected to the control module 30. The control module 30 outputs any one of a DC power supply, an AC power supply, and a pulse power supply to the high-voltage electrode. Under the control of the control module 30, the high-voltage electrode generates a plasma jet in the insulating medium tube 13. The structural form of the high-voltage electrode can be the following embodiments:

[0067] As an implementation mode, the high-voltage electrode is a metal electrode needle 141 inserted into the insulating medium tube 13 and coincident with the central axis thereof. The high-voltage electrode adopts a single-needle electrode structure, and the metal electrode needle 141 is used to ionize plasma.

[0068] As another embodiment, the high voltage electrode is a metal electrode ring 142 that fits tightly to the outer wall of the insulating medium tube 13 . The number of the metal electrode rings 142 can be greater than one. When power is supplied to the metal electrode rings 142 , plasma is ionized in the insulating medium tube 13 .

[0069] As another embodiment, the high voltage electrode is a combination of a metal electrode needle 141 and a metal electrode ring 142 , and both the metal electrode needle 141 and the metal electrode ring 142 exist at the same time.

[0070] Compared with the prior art, the above embodiment provides a plasma jet electromagnetic control system, in which a plasma jet is generated and emitted by a generating module 10, and the plasma jet is vertically injected into a processing chamber 21, and a first magnetic field in the same direction as the plasma jet is used to constrain electrons in the axial magnetic field lines by means of the Lorentz force, thereby reducing the collision and recombination of electrons with the circumferential insulating medium tube 13, and increasing the axial propagation intensity of the plasma jet;

[0071] By switching the positive and negative directions of the first electric field, the propagation length of the plasma jet is controlled in a dimension parallel to the direction of the plasma jet;

[0072] In the horizontal direction, a second magnetic field and a second electric field perpendicular to the direction of the first electric field are formed respectively. By adjusting the direction of the positive pole in the second electric field, the offset of the plasma jet in the front-to-back direction is controlled. By adjusting the positions of the N and S poles in the second magnetic field, the offset of the plasma jet in the left-to-right direction is controlled.

[0073] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0074] The above embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for those of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A plasma jet electromagnetic control system, characterized in that: include: A generating module, used for generating and emitting a plasma jet; A processing module is provided with a processing chamber for receiving the plasma jet, and is configured to form a first magnetic field in the same direction as the plasma jet direction, a first electric field whose direction can be switched forward and reverse and parallel to the plasma jet direction, a second magnetic field whose direction is perpendicular to the first electric field direction, and a second electric field whose direction can be switched forward and reverse and perpendicular to the first electric field direction in the processing chamber; an exhaust portion for discharging the plasma and a window portion for taking and placing a processed object are provided on the wall surface of the processing chamber; A control module, electrically connected to the generating module and the processing module respectively; At least a portion of the wall surface of the processing chamber constitutes a first wall surface, a second wall surface, a third wall surface, a fourth wall surface, a fifth wall surface and a sixth wall surface; The first wall surface and the second wall surface are parallel and respectively located at the upper side and the lower side of the processing chamber, and the first wall surface and the second wall surface are used to form the first magnetic field and the first electric field; The third wall surface and the fourth wall surface are parallel and respectively located at the front side and the rear side of the processing chamber, the third wall surface and the fourth wall surface are perpendicular to the first wall surface and the second wall surface, and the third wall surface and the fourth wall surface are used to form the second magnetic field and the second electric field; The fifth wall surface and the sixth wall surface are parallel and respectively located on the left and right sides of the processing chamber, the fifth wall surface and the sixth wall surface are perpendicular to the first wall surface and the second wall surface, the fifth wall surface is provided with an exhaust portion, and the sixth wall surface is provided with a window portion; The first wall surface is provided with a connecting through hole, at least a portion of the generating module is inserted into the connecting through hole, and a first spiral coil is embedded in the hole wall of the connecting through hole; The inner surface or outer surface of the first wall surface is closely connected with a first metal plate electrode layer, the first metal plate electrode layer has an opening in a region corresponding to the connecting through hole, and the inner surface or outer surface of the second wall surface is closely connected with a second metal plate electrode layer; The outer surfaces of the third wall and the fourth wall are both provided with horizontal magnetron modules, and the horizontal magnetron modules are sequentially stacked with a heating wire layer, a second insulating film layer, a third metal plate electrode layer, a third insulating film layer and a second spiral coil from the inside to the outside. The third wall and the fourth wall are made of insulating medium, and the heating wire layer, the third metal plate electrode layer and the second spiral coil are electrically connected to the control module respectively.

2. A plasma jet electromagnetic control system according to claim 1, characterized in that: At least one heat source and a temperature sensor are also disposed in the processing chamber, and the heat source and the temperature sensor are electrically connected to the control module respectively.

3. A plasma jet electromagnetic control system according to claim 1, characterized in that: The air tightness of the processing chamber is between 95 percent and 99 percent.

4. A plasma jet electromagnetic control system according to claim 1, characterized in that: A yoke unit is provided in the second spiral coil.

5. A plasma jet electromagnetic control system according to claim 1, characterized in that: The second wall surface, the third wall surface, and the fourth wall surface are respectively movably connected to the first wall surface.

6. A plasma jet electromagnetic control system according to claims 1 to 5, characterized in that: The generating module comprises a gas storage tank, a flow controller, an insulating medium tube and at least one high-voltage electrode. The gas storage tank is connected to the flow controller via an air pipe. The flow controller is connected to the tube wall of the insulating medium tube. At least a portion of the insulating medium tube is inserted into the connecting through hole. The high-voltage electrode is connected to the insulating medium tube and is electrically connected to the control module.

7. A plasma jet electromagnetic control system according to claim 6, characterized in that: The high-voltage electrode is a metal electrode needle inserted into the insulating medium tube and coincident with the central axis thereof, or a metal electrode ring tightly fitted to the outer wall of the insulating medium tube, or a combination of the metal electrode needle and the metal electrode ring.

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