Image sensor pixel structure, image sensor, and electronic device

Abstract

The application provides an image sensor pixel structure, an image sensor and an electronic device. The image sensor pixel structure comprises a photoelectric conversion circuit, a transfer circuit, a first reset circuit, a second reset circuit, a source follower circuit and a row selection circuit; one end of the photoelectric conversion circuit is grounded, and the other end is connected between a first end of the transfer circuit and a first end of the first reset circuit; second ends of the transfer circuit, the second reset circuit and the source follower circuit are all connected with a floating diffusion node; a second end of the first reset circuit is connected with a first end of the second reset circuit and a first end of the source follower circuit, and then connected with a power supply node; a third end of the source follower circuit is connected with a first end of the row selection circuit; and a second end of the row selection circuit is connected with a column bit line. The application can reduce the smear phenomenon of the image sensor, improve the signal-to-noise ratio of the image sensor, make the image sensor more suitable for use in a dark environment, and improve the applicability of the image sensor.

Description

Technical Field

[0001] The present invention relates to the technical field of solid-state image sensors, and in particular to an image sensor pixel structure, an image sensor, and an electronic device. Background Art

[0002] Image sensors, a high-end technology component that converts light signals into electrical signals using optoelectronic devices, are widely used in security, photography, autonomous driving, healthcare, and other fields. When imaging equipment is used at night, image sensors must have an extremely high signal-to-noise ratio and high consistency between individual pixel units.

[0003] Currently, CMOS image sensors generally use a 4-pixel structure, such as Figure 1 As shown, the four-transistor pixel structure includes: a photodiode PD1, a charge transfer transistor Q10, a reset transistor Q20, a source follower transistor Q30, and a selection transistor Q40. During operation, the selection transistor Q40 is first turned on under the control of the selection signal Sel, and the corresponding pixel structure is selected. At the same time, the reset transistor Q20 is turned on under the control of the reset signal Reset, and the floating diffusion node (Floating Diffusing, FD) is reset to VDD. At the same time, the photodiode PD1 also continuously generates photogenerated charges under exposure conditions. When the exposure is completed, the charge transfer transistor Q10 is turned on under the control of the transmission signal Tx, and the photogenerated charges accumulated by the photodiode PD1 during the exposure process are transferred to the reset floating diffusion node FD. Then, the voltage change of the floating diffusion node FD is reflected to the output terminal Vout of the pixel structure through the source follower transistor Q30, thereby reflecting the voltage change during the exposure process.

[0004] However, since the PD area of ​​the photodiode is relatively large, when the charge transfer transistor is turned on, the photogenerated charges formed in the PD area of ​​the photodiode cannot be completely transferred to the floating diffusion node through the charge transfer transistor. As a result, when the next exposure is performed, the photogenerated charges of the previous exposure are stored in the PD area of ​​the photodiode, resulting in a smear phenomenon, which reduces the signal-to-noise ratio of the image sensor and affects the performance of the image sensor. Summary of the Invention

[0005] The embodiments of the present invention provide an image sensor pixel structure, an image sensor, and an electronic device to solve the problem that the pixel structure of the existing image sensor may produce a smear phenomenon and the performance needs to be improved.

[0006] In a first aspect, an embodiment of the present application provides an image sensor pixel structure, comprising: a photoelectric conversion circuit, a transfer circuit, a first reset circuit, a second reset circuit, a source follower circuit and a row selection circuit;

[0007] The photoelectric conversion circuit has one end grounded and the other end connected between the first end of the transfer circuit and the first end of the first reset circuit, and is configured to accumulate photo-generated charges based on an illumination condition during exposure;

[0008] The transfer circuit has a second end connected to a floating diffusion node, and is configured to, after exposure, transmit the accumulated photo-generated charges to the floating diffusion node under the control of a transfer signal, so that the voltage of the floating diffusion node changes from a first voltage after reset to a second voltage;

[0009] The first reset circuit has a second end connected to the first end of the second reset circuit and the first end of the source follower circuit, and is configured to, before exposure, reset the voltage of the photoelectric conversion circuit under the control of a reset signal;

[0010] The second reset circuit has a second end connected to the floating diffusion node, and is configured to, before exposure, reset the voltage of the floating diffusion node to the first voltage under the control of the reset signal;

[0011] The source follower circuit has a second end connected to the floating diffusion node and a third end connected to the first end of the row selection circuit, and is configured to amplify and output the first voltage or the second voltage;

[0012] The row selection circuit has a second end connected to a column bit line, and is configured to output the amplified first voltage or the discharged second voltage to the column bit line under the control of a row selection signal.

[0013] In a possible implementation, the first reset circuit comprises a first reset transistor.

[0014] The first reset transistor has a source connected between the other end of the photoelectric conversion circuit and the first end of the transfer circuit, a drain connected to the first end of the second reset circuit and the first end of the source follower circuit after connecting to a power supply node, and a gate configured to input the reset signal.

[0015] In a possible implementation, the image sensor pixel structure further comprises a negative feedback circuit.

[0016] The negative feedback circuit is connected between the second end of the row selection circuit and the column bit line, and the output end is connected with the second end of the first reset circuit, the first end of the second reset circuit and the first end of the source follower circuit respectively, and the non-inverting input end is used for inputting a reference voltage, and under the control of the reset signal, the amplified first voltage output to the column bit line is controlled as the reference voltage before exposure.

[0017] In a possible implementation, the negative feedback circuit comprises a third reset transistor and an operational amplifier.

[0018] The third reset transistor is connected between the second end of the row selection circuit and the column bit line, and the drain electrode is connected with the inverting input end of the operational amplifier, and the gate electrode is used for inputting the reset signal.

[0019] The operational amplifier is used for inputting a reference voltage at the non-inverting input end, and the output end is connected with the second end of the first reset circuit, the first end of the second reset circuit and the first end of the source follower circuit respectively.

[0020] In a possible implementation, the transmission circuit comprises a charge transmission transistor.

[0021] The charge transmission transistor is connected with the other end of the photoelectric conversion circuit at the source electrode, and connected with the floating diffusion node at the drain electrode, and the gate electrode is used for inputting a transmission signal.

[0022] In a possible implementation, the second reset circuit comprises a second reset transistor.

[0023] The second reset transistor is connected with the floating diffusion node at the source electrode, and connected with the second end of the first reset circuit and the first end of the source follower circuit at the drain electrode, and then connected with a power supply node, and the gate electrode is used for inputting the reset signal.

[0024] In a possible implementation, the source follower circuit comprises a source follower transistor.

[0025] The source follower transistor is connected with the floating diffusion node at the gate electrode, and connected with the second end of the first reset circuit and the first end of the second reset circuit at the drain electrode, and then connected with a power supply node, and the source electrode is connected with the first end of the row selection circuit.

[0026] In a possible implementation, the row selection circuit comprises a row selection transistor.

[0027] The row selection transistor is connected with the third end of the source follower circuit at the drain electrode, and connected with the column bit line at the source electrode, and the gate electrode is used for inputting the row selection signal.

[0028] In a second aspect, an embodiment of the present application provides an image sensor, comprising the image sensor pixel structure as described in the first aspect or any possible implementation of the first aspect.

[0029] In a third aspect, an embodiment of the present application provides an electronic device, comprising the image sensor as described in the second aspect.

[0030] The image sensor pixel structure, the image sensor and the electronic device provided by the embodiments of the present application have the advantages that, compared with the prior art, the image sensor pixel structure adds the first reset circuit at the other end of the photoelectric conversion circuit, so that the voltage of the floating diffusion node and the voltage of the photoelectric conversion circuit can be reset simultaneously under the control of the reset signal. Resetting the voltage of the photoelectric conversion circuit can clear the photo-generated charge stored in the photoelectric conversion circuit in the last exposure process, thereby reducing the smear phenomenon of the image sensor, improving the signal-to-noise ratio of the image sensor, improving the performance of the image sensor, making the image sensor more suitable for use in dark environments, and improving the applicability of the image sensor. BRIEF DESCRIPTION OF DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0032] Figure 1 is a schematic diagram of the 4-pixel structure in the prior art provided by the embodiments of the present application;

[0033] Figure 2 is a schematic diagram of the image sensor pixel structure provided by the embodiments of the present application;

[0034] Figure 3 is a schematic diagram of the image sensor pixel structure provided by another embodiment of the present application;

[0035] Figure 4 is a schematic diagram of the image sensor pixel structure provided by yet another embodiment of the present application;

[0036] Figure 5 is a timing diagram of the control signals of the image sensor pixel structure provided by the embodiments of the present application. DETAILED DESCRIPTION

[0037] In the following description, for purposes of explanation and not limitation, specific details are set forth such as particular architectures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. However, it will be apparent to those skilled in the art that the present application can be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known methods, devices, circuits, and

[0038] In order to make the objects, technical solutions and advantages of the present application clearer, the following will be described in conjunction with the accompanying drawings and specific embodiments.

[0039] Embodiment one

[0040] Referring to Figure 2 The image sensor pixel structure provided by the embodiments of the present application can include a photoelectric conversion circuit 10, a transfer circuit 20, a first reset circuit 60, a second reset circuit 30, a source follower circuit 40 and a row selection circuit 50.

[0041] The photoelectric conversion circuit 10 has one end grounded and the other end connected between the first end of the transfer circuit 20 and the first end of the first reset circuit 60, and is used to accumulate photo-generated charges based on light conditions during exposure.

[0042] The transfer circuit 20 has a second end connected with a floating diffusion node FD, and is used to, after exposure, transfer the accumulated photo-generated charges to the floating diffusion node FD under the control of a transfer signal Tx, so that the voltage of the floating diffusion node FD changes from the first voltage after reset to the second voltage.

[0043] The first reset circuit 60 has a second end connected with the first end of the second reset circuit 30 and the first end of the source follower circuit 40 and then connected with a power supply node VDD, and is used to, before exposure, reset the voltage of the photoelectric conversion circuit 10 under the control of a reset signal Reset.

[0044] The second reset circuit 30 has a second end connected with the floating diffusion node FD, and is used to, before exposure, reset the voltage of the floating diffusion node FD under the control of the reset signal Reset.

[0045] The source follower circuit 40 has a second end connected with the floating diffusion node FD and a third end connected with the first end of the row selection circuit 50, and is used to amplify and output the first voltage or the second voltage.

[0046] The row selection circuit 50 has a second end connected with a column bit line, and is used to, under the control of a row selection signal Sel, output the amplified first voltage or the discharged second voltage to the column bit line.

[0047] In conjunction with Figure 2As shown, the second end of the row selection circuit 50 is also connected to one end of a bias current source ibias, and the other end of the bias current source ibias is grounded, so as to form a source follower readout circuit based on the source follower circuit 40, the row selection circuit 50 and the bias current source ibias, and under the control of the row selection signal Sel, the amplified first voltage or the discharged second voltage is output to the column bit line.

[0048] In combination Figure 5 , the image sensor pixel structure of the embodiment of the present application works as follows. First, the potential of the row selection signal Sel changes from low to high, controls the row selection circuit 50 in the image sensor pixel structure to be turned on, and then selects the image sensor pixel structure in which the row selection circuit 50 is located, so as to output the output result to the column bit line when there is an output at the output end Vout of the image sensor pixel structure. At the same time, the potential of the reset signal Reset changes from low to high, controls the first reset circuit 60 and the second reset circuit 30 to be turned on, and then simultaneously resets the voltage of the negative end of the photoelectric conversion circuit 10 and the floating diffusion node FD. Since the voltage of the photoelectric conversion circuit 10 negative end and the floating diffusion node FD is simultaneously reset, the photoelectric conversion circuit 10 can clear the photo-generated charge stored in the last exposure process while resetting the voltage of the floating diffusion node FD to the first voltage. At this time, since the potential of the row selection signal Sel is always high, after the voltage of the floating diffusion node FD is reset to the first voltage, the source follower circuit 40 will amplify and output the first voltage, and then output the amplified first voltage (which can also be referred to as the initial voltage) to the column bit line through the row selection circuit 50. Referring back to Figure 4 , for a period of time after the reset (which can also be referred to as the exposure process), the photoelectric conversion circuit 10 accumulates photo-generated charges based on the light conditions. Then the potential of the transmission signal Tx changes from low to high, the transmission circuit 20 is turned on, and then the accumulated photo-generated charges are transmitted to the floating diffusion node FD, and at this time the voltage of the floating diffusion node FD changes from the first voltage after the reset to the second voltage. At this time, since the potential of the row selection signal Sel is always high, the source follower circuit 40 will amplify and output the second voltage, and then output the amplified second voltage (which can also be referred to as the initial voltage) to the column bit line through the row selection circuit 50. The difference between the amplified second voltage and the initial voltage is the electrical signal converted by the photoelectric conversion circuit from the optical signal corresponding to the light conditions in the exposure process.

[0049] The embodiment of the present application adds the first reset circuit at the other end of the photoelectric conversion circuit, and can reset the voltage of the floating diffusion node and the voltage of the photoelectric conversion circuit under the control of the reset signal.

[0050] Optionally, in combination with Figure 2 and Figure 3 As shown in the figure, the first reset circuit 60 can include a first reset transistor Q5.

[0051] The first reset transistor Q5 is connected between the other end of the photoelectric conversion circuit 10 and the first end of the transmission circuit 20, and the drain is connected to the first end of the second reset circuit 30 and the first end of the source follower circuit 40 after being connected to the power supply node VDD, and the gate is used to input the reset signal Reset.

[0052] Optionally, the second reset circuit 30 can include a second reset transistor Q2.

[0053] The source of the second reset transistor Q2 is connected to the floating diffusion node FD, the drain is connected to the second end of the first reset circuit 60 and the first end of the source follower circuit 40 after being connected to the power supply node VDD, and the gate is used to input the reset signal Reset.

[0054] The photoelectric conversion circuit 10 can include a photodiode FD, and the drain of the first reset transistor Q5 can be connected together with the first end of the second reset circuit 30 and the first end of the source follower circuit 40 to connect the common power supply node VDD, or can be separated and connected to the required power supply node.

[0055] The first reset transistor Q5 and the second reset transistor Q2 of the embodiment can be turned on at the same time under the action of the reset signal Reset, and then reset the voltages of the negative end of the photoelectric conversion circuit 10 and the floating diffusion node FD. At the same time of resetting the voltage of the floating diffusion node FD to the first voltage, the photo-generated charge stored in the photoelectric conversion circuit 10 during the last exposure process is cleared, thereby reducing the image sensor's trailing phenomenon, reducing noise, improving the image sensor's signal-to-noise ratio, and improving the image sensor's performance.

[0056] Optionally, the transmission circuit 20 can include a charge transfer transistor Q1.

[0057] The charge transfer transistor Q1 has its source connected to the other end of the photoelectric conversion circuit 10, its drain connected to the floating diffusion node FD, and its gate used for inputting a transfer signal Tx.

[0058] The charge transfer transistor Q1 in this embodiment functions as a switch. Before exposure, that is, during reset, the charge transfer transistor is turned off under the action of the transfer signal Tx. After exposure is completed, the charge transfer transistor Q1 is turned on under the action of the transfer signal Tx, thereby transferring the photo-generated charges accumulated in the photoelectric conversion circuit during the entire exposure process to the floating diffusion node FD.

[0059] Optionally, the source follower circuit 40 can include a source follower transistor Q3.

[0060] The source follower transistor Q3 has its gate connected to the floating diffusion node FD, its drain connected to the second end of the first reset circuit 60 and the first end of the second reset circuit 30 after being connected to the power supply node VDD, and its source connected to the first end of the row selection circuit 50.

[0061] Optionally, the row selection circuit 50 can include a row selection transistor Q4.

[0062] The row selection transistor Q4 has its drain connected to the third end of the source follower circuit 40, its source connected to the column bit line, and its gate used for inputting a row selection signal Sel.

[0063] In this embodiment, the source follower circuit 40, the row selection circuit 50, and the bias current source ibias can constitute a source follower readout circuit, so as to output the amplified first voltage or the discharged second voltage to the column bit line under the control of the row selection signal Sel.

[0064] As another embodiment of the present application, referring to Figure 4 , the image sensor pixel structure can further include a negative feedback circuit 70.

[0065] The negative feedback circuit 70 has its inverting input end connected between the second end of the row selection circuit 50 and the column bit line, its output end connected to the second end of the first reset circuit 60, the first end of the second reset circuit 30, and the first end of the source follower circuit 40, and its non-inverting input end used for inputting a reference voltage Vref. The negative feedback circuit 70 is used to control the amplified first voltage output to the column bit line to be the reference voltage Vref under the control of a reset signal Reset before exposure.

[0066] Optionally, as shown in Figure 4 , the negative feedback circuit 70 can include a third reset transistor Q6 and an operational amplifier U1.

[0067] The third reset transistor Q6 has a source connected between the second end of the row selection circuit 50 and the column bit line, a drain connected to the inverting input end of the operational amplifier U1, and a gate for inputting a reset signal Reset.

[0068] The operational amplifier U1 has a non-inverting input end for inputting a reference voltage Vref, and an output end connected to the second end of the first reset circuit 60, the first end of the second reset circuit 30, and the first end of the source follower circuit 40, respectively.

[0069] In the prior art, when an image sensor is formed by image sensor pixel structures, even if the same power supply node VDD is input to each image sensor pixel structure in the image sensor during reset, due to differences in manufacturing processes, environments, etc., the initial voltage output at the output end Vout of each image sensor pixel structure can be different, which results in poor consistency among the image sensor pixel structures in the image sensor and affects the use of the image sensor in a dark environment.

[0070] In this embodiment, the reset signal Reset is used to control the first reset circuit 60, the second reset circuit 30, and the negative feedback circuit 70. Figure 4 It can be seen that the negative feedback circuit 70 in the image sensor pixel structure is also controlled by the reset signal Reset. That is, during operation of the image sensor pixel structure of this embodiment, the first reset circuit 60, the second reset circuit 30, and the negative feedback circuit 70 are simultaneously turned on under the control of the reset signal Reset. At this time, since the inverting input end of the negative feedback circuit 70 is connected between the second end of the row selection circuit 50 and the column bit line (i.e., connected to the output end Vout), and the non-inverting input end of the negative feedback circuit 70 is used to input the reference voltage Vref, the initial voltage output to the column bit line can be controlled to be the reference voltage Vref by the negative feedback circuit 70. When the image sensor pixel structure of this embodiment is used to form an image sensor by being arranged in rows and columns, if the reference voltage Vref input to each image sensor pixel structure is the same, then during reset, the output at the output end Vout of each image sensor pixel structure in the image sensor is the reference voltage Vref. This improves the consistency among the image sensor pixel structures and makes the formed image sensor more suitable for use in a dark environment, thereby improving the applicability of the image sensor.

[0071] Embodiment Two

[0072] The present application also includes an image sensor comprising image sensor pixel structures according to any one of the above embodiments arranged in rows and columns, and having the same beneficial effects as the image sensor pixel structures according to any one of the above embodiments.

[0073] Embodiment Three

[0074] The application also includes an electronic device comprising the image sensor of the above-mentioned embodiments and having the same advantages as the image sensor of the above-mentioned embodiments.

[0075] In the above-mentioned embodiments, the description of each embodiment has its own focus, and the parts not described or recorded in detail in a certain embodiment can be referred to the relevant description of other embodiments.

[0076] The above embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can still be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. An image sensor pixel structure, characterized in that: include: A photoelectric conversion circuit, a transmission circuit, a first reset circuit, a second reset circuit, a source follower circuit, and a row selection circuit; The photoelectric conversion circuit has one end grounded and the other end connected between the first end of the transmission circuit and the first end of the first reset circuit, and is used to accumulate photogenerated charges based on illumination conditions during exposure; The transmission circuit has a second end connected to the floating diffusion node and is configured to transmit the accumulated photogenerated charge to the floating diffusion node under the control of a transmission signal after exposure is completed, so that the voltage of the floating diffusion node changes from a reset first voltage to a second voltage; The first reset circuit has a second end connected to the first end of the second reset circuit and the first end of the source follower circuit and then connected to a power supply node, and is used to reset the voltage of the photoelectric conversion circuit under the control of a reset signal before exposure; The second reset circuit has a second end connected to the floating diffusion node, and is configured to reset the voltage of the floating diffusion node to the first voltage under the control of the reset signal before exposure; The source follower circuit has a second terminal connected to the floating diffusion node and a third terminal connected to the first terminal of the row selection circuit, and is configured to amplify and output the first voltage or the second voltage; The row selection circuit has a second end connected to the column bit line, and is configured to output the amplified first voltage or the amplified second voltage to the column bit line under the control of the row selection signal; During operation, the potential of the row selection signal changes from low to high and is kept high, thereby controlling the row selection circuit to be turned on. Simultaneously, the potential of the reset signal changes from low to high, thereby controlling the first reset circuit and the second reset circuit to be turned on, thereby simultaneously resetting the voltage of the photoelectric conversion circuit and the voltage of the floating diffusion node. The source follower circuit amplifies and outputs the first voltage after the floating diffusion node is reset, and the row selection circuit outputs the amplified first voltage to the column bit line. During the exposure process after reset, the photoelectric conversion circuit accumulates photogenerated charges based on the lighting conditions. After the exposure is completed, the potential of the transmission signal changes from low to high, and the transmission circuit is controlled to be turned on to transfer the accumulated photogenerated charges to the floating diffusion node, so that the voltage of the floating diffusion node changes from the first voltage after reset to the second voltage. At the same time, when the potential of the row selection signal is always high, the source follower circuit amplifies and outputs the second voltage, and the row selection circuit outputs the amplified second voltage to the column bit line.

2. The image sensor pixel structure according to claim 1, wherein: The first reset circuit includes: a first reset transistor; The first reset transistor has a source connected between the other end of the photoelectric conversion circuit and the first end of the transmission circuit, a drain connected to the first end of the second reset circuit and the first end of the source follower circuit and then connected to the power supply node, and a gate used to input the reset signal.

3. The image sensor pixel structure according to claim 1, wherein: Also includes: Negative feedback circuit; The negative feedback circuit has an inverting input end connected between the second end of the row selection circuit and the column bit line, an output end connected to the second end of the first reset circuit, the first end of the second reset circuit and the first end of the source follower circuit respectively, and a non-inverting input end for inputting a reference voltage, and is used to control the amplified first voltage output to the column bit line to the reference voltage under the control of the reset signal before exposure.

4. The image sensor pixel structure according to claim 3, wherein: The negative feedback circuit includes: a third reset transistor and an operational amplifier; The third reset transistor has a source connected between the second end of the row selection circuit and the column bit line, a drain connected to the inverting input terminal of the operational amplifier, and a gate for inputting the reset signal; The operational amplifier has a non-inverting input terminal for inputting a reference voltage, and an output terminal respectively connected to the second terminal of the first reset circuit, the first terminal of the second reset circuit, and the first terminal of the source follower circuit.

5. The image sensor pixel structure according to any one of claims 1 to 4, characterized in that: The transmission circuit includes: a charge transfer transistor; The charge transfer transistor has a source connected to the other end of the photoelectric conversion circuit, a drain connected to the floating diffusion node, and a gate for inputting a transfer signal.

6. The image sensor pixel structure according to any one of claims 1 to 4, characterized in that: The second reset circuit includes: a second reset transistor; The second reset transistor has a source connected to the floating diffusion node, a drain connected to the second end of the first reset circuit and the first end of the source follower circuit respectively and then connected to the power supply node, and a gate for inputting the reset signal.

7. The image sensor pixel structure according to any one of claims 1 to 4, characterized in that: The source follower circuit includes: a source follower transistor; The source follower transistor has a gate connected to the floating diffusion node, a drain connected to the second end of the first reset circuit and the first end of the second reset circuit respectively and then connected to a power supply node, and a source connected to the first end of the row selection circuit.

8. The image sensor pixel structure according to any one of claims 1 to 4, wherein: The row selection circuit includes: a row selection transistor; The row selection transistor has a drain connected to the third terminal of the source follower circuit, a source connected to the column bit line, and a gate for inputting the row selection signal.

9. An image sensor, characterized in that: The image sensor comprises the pixel structure of any one of claims 1 to 8 arranged in rows and columns.

10. An electronic device, characterized in that: Comprising an image sensor as claimed in claim 9.

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