Cured resin film, composite sheet, and method for manufacturing semiconductor chip

Abstract

The present invention provides a curable resin film capable of forming a protective film having excellent covering properties with respect to both the bump formation surface and the side surface of a semiconductor chip. As a curable resin film that solves this problem, a curable resin film for forming a protective film on both the bump formation surface and the side surface of a semiconductor chip having a bump formation surface provided with a bump satisfies the following condition (I). <Condition (I)> A test piece of the curable resin film having a diameter of 25 mm and a thickness of 1 mm is strained under conditions of a temperature of 90°C and a frequency of 1 Hz, and the storage modulus of the test piece is measured. When the storage modulus of the test piece at a strain of 1% of the test piece is set as Gc1, and the storage modulus of the test piece at a strain of 300% of the test piece is set as Gc300, the X value calculated by the following formula (i) is 19 or more and less than 10,000. X = Gc1 / Gc300 ··· (i)

Description

TECHNICAL FIELD

[0001] The present application relates to a curable resin film, a composite sheet, and a method for manufacturing a semiconductor chip. More specifically, the present application relates to a curable resin film and a composite sheet provided with the curable resin film, and a method for manufacturing a semiconductor chip provided with a cured resin film as a protective film by using these materials. BACKGROUND

[0002] In recent years, the manufacturing of semiconductor devices has been performed using a mounting method called a so-called flip-chip (face down) method. In the flip-chip method, a semiconductor chip provided with bumps on a circuit surface and a substrate for mounting the semiconductor chip are stacked in such a manner that the circuit surface of the semiconductor chip faces the substrate, and the semiconductor chip is mounted on the substrate.

[0003] Note that the semiconductor chip is generally obtained by singulating a semiconductor wafer provided with bumps on a circuit surface.

[0004] On a semiconductor wafer provided with bumps, a protective film is sometimes provided for the purpose of protecting the bumps and the junction portion of the semiconductor wafer (hereinafter also referred to as "bump neck portion").

[0005] For example, in Patent Literature 1 and Patent Literature 2, a laminate in which a support base material, an adhesive layer, and a thermosetting resin layer are sequentially stacked is pressed and attached to the bump formation surface of a semiconductor wafer provided with bumps with the thermosetting resin layer as the attachment surface, and then the thermosetting resin layer is heated to be cured, thereby forming a protective film.

[0006] PRIOR ART DOCUMENTS

[0007] PATENT LITERATURE

[0008] Patent Literature 1: Japanese Patent Application Publication No. 2015-092594

[0009] Patent Literature 2: Japanese Patent Application Publication No. 2012-169484 SUMMARY

[0010] PROBLEMS TO BE SOLVED BY THE INVENTION

[0011] In recent years, with the miniaturization and thinning of IC embedded products such as electronic devices, higher requirements for the thinning of semiconductor chips have been made. However, when the semiconductor chip is thinned, the strength of the semiconductor chip decreases. Therefore, for example, when the semiconductor chip is transported or subsequent processes for packaging the semiconductor chip are performed, there is a problem that the semiconductor chip is easily damaged.

[0012] To this end, it is conceivable to form a protective film on the bump formation surface of the semiconductor wafer to improve the strength of the semiconductor chip while protecting the bump necks. However, the improvement in the strength of the semiconductor chip cannot be sufficiently achieved by forming the protective film on the bump formation surface of the semiconductor wafer alone. In addition, peeling of the protective film sometimes occurs.

[0013] The present inventors have conceived that, by providing the protective film for the purpose of protecting the bump necks not only on the bump formation surface of the semiconductor chip but also on the side surface, the strength of the semiconductor chip can be improved while peeling of the protective film can be suppressed, and a very rational configuration can be constructed. Based on this idea, the present inventors have created a curable resin film capable of forming a protective film having excellent covering properties with respect to both the bump formation surface and the side surface of the semiconductor chip, as a result of intensive studies.

[0014] Therefore, the present application provides a curable resin film capable of forming a protective film having excellent covering properties with respect to both the bump formation surface and the side surface of the semiconductor chip, a composite sheet provided with the curable resin film, and a method for manufacturing a semiconductor chip using these materials (the curable resin film and the composite sheet).

[0015] Method for solving the problem

[0016] As a result of intensive studies, the present inventors have found that the above problem can be solved by focusing on a parameter calculated from a specific physical property value possessed by a curable resin film, and have completed the present application.

[0017] That is, the present application relates to the following [1] to

[14] .

[0018] [1] A curable resin film for forming a cured resin film as a protective film on both the bump formation surface and the side surface of a semiconductor chip having a bump formation surface provided with a bump, the curable resin film satisfying the following condition (I).

[0019] <Condition (I)>

[0020] A test piece of the above curable resin film having a diameter of 25 mm and a thickness of 1 mm is strained and the storage modulus of the test piece is measured under conditions of a temperature of 90°C and a frequency of 1 Hz, and when the storage modulus of the test piece at a strain of 1% of the test piece is set as Gc1 and the storage modulus of the test piece at a strain of 300% of the test piece is set as Gc300, the X value calculated by the following formula (i) is 19 or more and less than 10,000.

[0021] X = Gc1 / Gc300 (i)

[0022] [2] The curable resin film according to the above [1], wherein

[0023] In the above condition (I), Gc300 is lower than 15,000.

[0024] [3] A composite sheet for forming a curable resin film as a protective film on both of a bump formation surface and a side surface of a semiconductor chip having the bump formation surface provided with a bump,

[0025] The above composite sheet has a laminated structure in which the support sheet and the layer of the curable resin are laminated,

[0026] The above curable resin is the curable resin film according to the above [1] or [2].

[0027] [4] A use method, the method comprising:

[0028] The curable resin film according to the above [1] or [2] is used for forming a curable resin film as a protective film on both of a bump formation surface and a side surface of a semiconductor chip having the bump formation surface provided with a bump.

[0029] [5] A use method, the method comprising:

[0030] The composite sheet according to the above [3] is used for forming a curable resin film as a protective film on both of a bump formation surface and a side surface of a semiconductor chip having the bump formation surface provided with a bump.

[0031] [6] A manufacturing method of a semiconductor chip, the method sequentially comprising the following steps (S1) to (S4),

[0032] • Step (S1): a step of preparing a wafer for manufacturing a semiconductor chip in which a groove portion as a division predetermined line is formed on a bump formation surface of a semiconductor wafer having the bump formation surface provided with a bump, in a manner not reaching a back surface;

[0033] • Step (S2): a step of pressing and adhering a first curable resin (x1) to the bump formation surface of the wafer for manufacturing a semiconductor chip, while filling the first curable resin (x1) into the groove portion formed on the wafer for manufacturing a semiconductor chip, while covering the bump formation surface of the wafer for manufacturing a semiconductor chip with the first curable resin (x1);

[0034] • Step (S3): a step of curing the first curable resin (x1) to obtain a wafer for manufacturing a semiconductor chip with a first cured resin film (r1);

[0035] • Step (S4): a step of singulating the wafer with the semiconductor chip with the first cured resin film (rl) along the division predetermined line to obtain a semiconductor chip in which at least the bump formation surface and the side surface are covered with the first cured resin film (rl),

[0036] The method for manufacturing a semiconductor chip according to any one of [7] to [9] further includes the following step (S-BG) after the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or in the step (S4).

[0037] • Step (S-BG): a step of grinding the back surface of the wafer with the semiconductor chip.

[0038] As the first curable resin (xl), the curable resin film described in [1] or [2] is used.

[0039] [7] The method for manufacturing a semiconductor chip according to [6], wherein

[0040] The step (S2) is implemented by pressing and adhering the first composite sheet (al) having a laminated structure in which the first support sheet (Yl) and the layer (Xl) of the first curable resin (xl) are laminated to the bump formation surface of the wafer with the semiconductor chip with the layer (Xl) as the adhering surface.

[0041] [8] The method for manufacturing a semiconductor chip according to [7], wherein

[0042] The step (S-BG) is implemented by peeling the first support sheet (Yl) from the first composite sheet (al) after the back surface of the wafer with the semiconductor chip is ground in a state where the first composite sheet (al) is adhered.

[0043] The step (S-BG) is implemented by peeling the first support sheet (Yl) from the first composite sheet (al) after the back surface of the wafer with the semiconductor chip is ground in a state where the first composite sheet (al) is adhered.

[0044] The step (S4) is implemented by cutting the portion of the first cured resin film (rl) of the wafer with the semiconductor chip with the first cured resin film (rl) formed in the groove portion along the division predetermined line.

[0045] [9] The method for manufacturing a semiconductor chip according to [7], wherein

[0046] The step (S-BG) is implemented by peeling the first support sheet (Yl) from the first composite sheet (al) after the back surface of the wafer with the semiconductor chip is ground in a state where the first composite sheet (al) is adhered.

[0047] The process (S3) is performed without peeling the first support sheet (Y1) from the first composite sheet (al),

[0048] The process (S-BG) is performed by peeling the first support sheet (Y1) from the first composite sheet (al) after the back surface of the wafer for manufacturing semiconductor chips has been ground in a state where the first composite sheet (al) is attached,

[0049] The process (S4) is performed by cutting the portion of the first cured resin film (r1) of the wafer for manufacturing semiconductor chips with the first cured resin film (r1) along the division predetermined line.

[0050]

[10] The method for manufacturing semiconductor chips according to the above [7], wherein

[0051] The process (S-BG) is included in the process (S3),

[0052] The first support sheet (Y1) is peeled from the first composite sheet (al) after the process (S2) and before the process (S3),

[0053] The process (S-BG) is performed by attaching a back grinding sheet (b-BG) to the surface of the first cured resin film (r1) of the wafer for manufacturing semiconductor chips with the first cured resin film (r1), peeling the back grinding sheet (b-BG) from the wafer for manufacturing semiconductor chips with the first cured resin film (r1) after the back surface of the wafer for manufacturing semiconductor chips has been ground in a state where the back grinding sheet (b-BG) is attached,

[0054] The process (S4) is performed by cutting the portion of the first cured resin film (r1) of the wafer for manufacturing semiconductor chips with the first cured resin film (r1) along the division predetermined line.

[0055]

[11] The method for manufacturing semiconductor chips according to the above [7], wherein

[0056] The process (S-BG) is included in the process (S4),

[0057] The first support sheet (Y1) is peeled from the first composite sheet (al) after the process (S2) and before the process (S3),

[0058] The above process (S4) is implemented by cutting a notch in the portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove portion along the division predetermined line, or after a modified region is formed along the division predetermined line, as the process (S-BG), a back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) and the back surface of the wafer for manufacturing a semiconductor chip is ground in a state where the back grinding sheet (b-BG) is attached.

[0059]

[12] The method for manufacturing a semiconductor chip according to any one of the above [6] to

[11] , further comprising the following process (T).

[0060] • Process (T): a process of forming a second cured resin film (r2) on the back surface of the wafer for manufacturing a semiconductor chip

[0061]

[13] The method for manufacturing a semiconductor chip according to any one of the above [6] to

[12] , wherein the width of the groove portion is 10 μm to 2000 μm.

[0062]

[14] The method for manufacturing a semiconductor chip according to any one of the above [6] to

[13] , wherein the depth of the groove portion is 30 μm to 700 μm.

[0063] Effects of the Invention

[0064] According to the present application, it is possible to provide a cured resin film capable of forming a protective film with excellent covering properties with respect to both the bump forming surface and the side surface of a semiconductor chip, a composite sheet provided with the cured resin film, and a method for manufacturing a semiconductor chip using these materials (the cured resin film and the composite sheet). BRIEF DESCRIPTION OF DRAWINGS

[0065] Figure 1 is a schematic cross-sectional view of a first cured resin film (x1).

[0066] Figure 2 is a plan view for schematically illustrating the amount of resin film overflow when the planar shape of the resin film is circular.

[0067] Figure 3 is a cross-sectional diagram showing the configuration of a first composite sheet (α1) used in the manufacturing method of the present application.

[0068] Figure 4 is a cross-sectional diagram showing an example of the specific configuration of the first composite sheet (α1).

[0069] Figure 5is a cross-sectional diagram showing another other example of the detailed configuration of the first composite sheet (al).

[0070] Figure 6 is a cross-sectional diagram showing another other example of the detailed configuration of the first composite sheet (al).

[0071] Figure 7 is a process diagram of the manufacturing method of the semiconductor chip of the present application.

[0072] Figure 8 is a plan view showing an example of the wafer for manufacturing semiconductor chips prepared in the process (S1).

[0073] Figure 9 is a cross-sectional diagram showing an example of the wafer for manufacturing semiconductor chips prepared in the process (S1).

[0074] Figure 10 is a diagram showing an outline of the process (S2).

[0075] Figure 11 is a diagram showing an outline of the manufacturing method of the first embodiment.

[0076] Figure 12 is a diagram showing an outline of the manufacturing method of the second embodiment.

[0077] Figure 13 is a diagram showing an outline of the manufacturing method of the third embodiment.

[0078] Figure 14 is a diagram showing an outline of the manufacturing method of the fourth embodiment.

[0079] Figure 15 is a plan view schematically showing a laminate including the first thermosetting resin film (xl-1) prepared when measuring the overflow amount of the first thermosetting resin film (xl-1).

[0080] Figure 16 is a photograph for a substitute of the drawing showing the cross-sectional observation results of the filling property of the groove portion in Example 1, 2, and Comparative Example 1.

[0081] Symbol explanation

[0082] 10 wafer for manufacturing semiconductor chips

[0083] 11 wafer

[0084] 11a bump forming surface

[0085] 11b back surface

[0086] 12 bump

[0087] 13. Groove

[0088] 40 Semiconductor chips

[0089] x1 First Curing Resin

[0090] r1 First cured resin film

[0091] X1 layer

[0092] Y1 First Support Plate

[0093] α1 First composite film

[0094] x2 Second Curing Resin

[0095] r2 Second Curing Resin Film

[0096] X2 layer

[0097] Y2 Second Support Plate

[0098] α2 Second Composite Tablet

[0099] 51 Substrate

[0100] 61 Adhesive layer

[0101] 71 Intermediate Layer Detailed Implementation

[0102] In this specification, "active ingredient" refers to any component in the composition intended to be used, excluding diluents such as water and organic solvents.

[0103] In addition, in this specification, the weight-average molecular weight and number-average molecular weight are converted to polystyrene values ​​determined by gel permeation chromatography (GPC).

[0104] Furthermore, in this specification, the lower and upper limits of the preferred numerical ranges (e.g., the range of content, etc.) are described hierarchically and can be combined independently. For example, based on the description "preferred to be 10 to 90, more preferably 30 to 60", the "preferred lower limit (10)" and the "more preferably upper limit (60)" can be combined to obtain "10 to 60".

[0105] [Curing resin film (first curing resin film (x1))]

[0106] The curable resin film of the present invention is used to form a curable resin film as a protective film on both the bump forming surface and the side surface of a semiconductor chip having a bump forming surface, wherein the bump forming surface has bumps, and the curable resin film satisfies the following condition (I).

[0107] <Condition (I)>

[0108] The test piece of the above-mentioned curable resin film having a diameter of 25 mm and a thickness of 1 mm is strained at a temperature of 90°C and a frequency of 1 Hz, and the storage modulus of the test piece is measured. When the storage modulus of the test piece at a strain of 1% is set as Gc1, and the storage modulus of the test piece at a strain of 300% is set as Gc300, the X value calculated by the following formula (i) is 19 or more and less than 10,000.

[0109] X = Gc1 / Gc300 (i)

[0110] The test piece for which the storage modulus is measured is in a film shape, and the planar shape thereof is circular.

[0111] The test piece can also be a single layer of the above-mentioned curable resin film having a thickness of 1 mm, but from the viewpoint of easy production, it is preferable that the test piece be a laminated film composed of a plurality of single layers of the above-mentioned curable resin film having a thickness of less than 1 mm.

[0112] The thickness of the plurality of single layers of the above-mentioned curable resin film that constitute the above-mentioned laminated film can be all the same, all different, or only partially the same, but from the viewpoint of easy production, it is preferable that the thickness be all the same.

[0113] Note that in the present specification, the "storage modulus of a test piece" is not limited to Gc1 and Gc300, and refers to the "storage modulus of a test piece of a resin film having a diameter of 25 mm and a thickness of 1 mm when the test piece is strained at a temperature of 90°C and a frequency of 1 Hz".

[0114] The curable resin film of one embodiment of the present application can constitute a composite sheet having, for example, a laminated structure in which a support sheet and layers of the above-mentioned curable resin film are laminated.

[0115] In the present specification, the curable resin film (the curable resin film of the present application) for forming the cured resin film as a protective film on both the bump formation surface and the side surface of the semiconductor chip will also be referred to as "first curable resin film (xl)" or "first curable resin (xl)". Furthermore, the cured resin film formed by curing the "first curable resin film (xl)" or "first curable resin (xl)" will also be referred to as "first cured resin film (rl)". In addition, the curable resin film for forming the cured resin film as a protective film on the surface (back surface) of the semiconductor chip opposite to the bump formation surface will also be referred to as "second curable resin film (x2)" or "second curable resin (x2)". Furthermore, the cured resin film formed by curing the "second curable resin film (x2)" or "second curable resin (x2)" will also be referred to as "second cured resin film (r2)".

[0116] In addition, in the present specification, the composite sheet for forming the first cured resin film (rl) as a protective film on both the bump formation surface and the side surface of the semiconductor chip will also be referred to as "first composite sheet (al)". The "first composite sheet (al)" has a laminated structure in which the "first support sheet (Yl)" and the layer (Xl) of the "first curable resin (xl)" are laminated.

[0117] In addition, the composite sheet for forming the second cured resin film (r2) as a protective film on the back surface of the semiconductor chip will also be referred to as "second composite sheet (a2)". The "second composite sheet (a2)" has a laminated structure in which the "second support sheet (Y2)" and the layer (X2) of the "second curable resin (x2)" are laminated.

[0118] Figure 1 A cross-sectional schematic view of the first curable resin film (xl) is shown.

[0119] Note that in the drawings used in the following description, in order to make the features of the present application easy to understand, a portion that will become a main part is sometimes shown enlarged for convenience, and the dimensional ratios and the like of the respective constituent elements are not necessarily the same as in actuality.

[0120] Figure 1 The illustrated first curable resin film (xl) has a first release film 151 on one face (in the present specification, sometimes referred to as "first face") xla thereof, and a second release film 152 on the other face (in the present specification, sometimes referred to as "second face") xlb opposite to the above-mentioned first face xla.

[0121] The first curable resin film (xl) having such a constitution is suitable for storage in, for example, a roll shape.

[0122] The first release film 151 and the second release film 152 can each be publicly known.

[0123] The first release film 151 and the second release film 152 may be the same or different from each other. As an example of the case where the first release film 151 and the second release film 152 are different, the case where the peeling force required when peeling from the first curable resin film (x1) is different can be cited.

[0124] At once Figure 1 Regarding the first curable resin film (x1) shown, either the first release film 151 or the second release film 152 is removed, and the resulting exposed surface becomes the adhesive surface for the object to be adhered. Furthermore, the remaining one of the first release film 151 and the second release film 152 is removed, and the resulting exposed surface becomes the adhesive surface for the first support sheet (Y1) used to form the first composite sheet (α1) described later.

[0125] It should be noted that, Figure 1 An example is shown in which a release film is provided on both sides (first side x1a, second side x1b) of the first curable resin film (x1), but the release film may also be provided on only one side of the first curable resin film (x1), that is, it may be provided only on the first side x1a or only on the second side x1b.

[0126] The first curable resin film (x1) can be any film that is thermosetting or energy-curable, or it can have both thermosetting and energy-curable properties.

[0127] In this specification, "energy rays" refers to electromagnetic waves or beams of charged particles that contain energy quanta. Examples of energy rays include ultraviolet light, radiation, and electron beams. Ultraviolet light can be emitted by using high-pressure mercury lamps, fusion lamps, xenon lamps, black light, or LED lights as a source. Electron beams can be emitted by irradiating an electron beam generated by an electron beam accelerator, etc.

[0128] In addition, in this specification, "energy-ray curing property" means the property that cures when exposed to energy rays, and "non-energy-ray curing property" means the property that does not cure even when exposed to energy rays.

[0129] The first curable resin film (x1) contains resin components.

[0130] In addition, the first curable resin film (x1) may or may not contain components other than resin components while containing resin components.

[0131] As a preferred embodiment of the first curable resin film (x1), examples include: resin components, filler materials, and various additives that do not belong to any of these (resin components and filler materials) and have the effect of adjusting the storage modulus of the first curable resin film (x1).

[0132] As the above-mentioned additive having an adjusting effect on the storage modulus of the first curable resin film (x1), for example, a rheology modifier (thixotropic agent), a surfactant, a silicone oil, and the like can be given.

[0133] The first curable resin film (x1) is soft and is suitable for use in adhering to an adherend having a concave-convex surface such as a wafer for manufacturing a semiconductor chip having a bump-forming surface provided with bumps and a groove portion as a division intended line.

[0134] Note that, in the following description, the "wafer for manufacturing a semiconductor chip having a bump-forming surface provided with bumps and a groove portion as a division intended line" will be simply referred to as "wafer for manufacturing a semiconductor chip".

[0135] By pressing and adhering the first curable resin film (x1) against the bump-forming surface of the wafer for manufacturing a semiconductor chip, the first curable resin film (x1) can be filled in the groove portion with good filling property.

[0136] In addition, by pressing and adhering the first curable resin film (x1) against the bump-forming surface of the wafer for manufacturing a semiconductor chip, the bumps penetrate the first curable resin film (x1), and the head portions of the bumps protrude from the first curable resin film (x1). Further, the first curable resin film (x1) extends between the bumps in a manner to cover the bumps, and fills in the base portions of the bumps while being in close contact with the bump-forming surface, covering the surfaces of the bumps, particularly the surfaces of the vicinity of the bump-forming surface. In this state, the remaining of the first curable resin film (x1) is suppressed in the upper portions including the head portions of the bumps. Therefore, the attachment of the first cured resin film (r1) which is a cured product of the first curable resin film (x1) to the upper portions of the bumps is also naturally suppressed. Further, the first curable resin film (x1) is also likely to maintain the area of the first curable resin film (x1) as it was initially (before adhering) after being adhered to the adherend, and the phenomenon of the area of the first curable resin film (x1) after adhering expanding compared to the area of the first curable resin film (x1) as it was initially (before adhering) (hereinafter also referred to as "overflow") is suppressed. Therefore, when the first curable resin film (x1) is adhered against the bump-forming surface of the wafer for manufacturing a semiconductor chip, the filling failure into the groove portion, the base portions of the bumps, and the like is also suppressed.

[0137] Further, in the case where the first curable resin film (x1) is used, in a state where the first curable resin film (x1) and the first cured resin film (r1) which is a cured product thereof are provided on the bump-forming surface, unintended exposure (hereinafter also referred to as "undercut") of a region other than the upper portions of the bumps, or a region near the bumps of the bump-forming surface can be suppressed.

[0138] These effects can be achieved by setting the value of X defined in condition (I) above to be 19 or more and less than 10,000.

[0139] Note that whether or not the first curable resin film (x1) or the first cured resin film (r1) is present on the upper portion of the bump can be confirmed as follows: for example, observation using an optical microscope or SEM (scanning electron microscope) is performed, and photographic data is obtained, with respect to the upper portion of the bump.

[0140] In addition, whether or not the first curable resin film (x1) has overflowed can be observed by visual inspection or the like.

[0141] Further, whether or not the first curable resin film (x1) or the first cured resin film (r1) has shrinkage holes can be confirmed as follows: for example, observation using an optical microscope or SEM (scanning electron microscope) is performed, and photographic data is obtained, with respect to the bump formation surface.

[0142] Note that in the case where overflow has occurred when the resin film such as the first curable resin film (x1) is attached to the attachment target, the amount of overflow can be calculated by the following method.

[0143] That is, the resin film in the state where overflow has occurred is observed from above to below, and the maximum value of the length of a line segment between different two points on the outer periphery of the resin film at this time is found. Further, the value of the width of the resin film at the position coinciding with the above line segment showing the maximum value, at the initial time (i.e., before overflow has occurred), is found. Then, the maximum value of the length of the above line segment is subtracted from the value of the width of the resin film, and thus the amount of overflow of the resin film can be calculated.

[0144] Figure 2 is a plan view for schematically illustrating the amount of overflow of a resin film when the planar shape of the resin film is circular.

[0145] Figure 2 The resin film 101 shown is in a state where it is attached to the attachment target 102, and has formed a state where overflow has occurred with respect to the initial size. The resin film of the initial size is shown in the symbol 101', and is shown for the purpose of facilitating understanding of the amount of overflow. Here, the planar shape of the initial resin film 101' is circular, but the planar shape of the resin film 101 formed in the state of overflow is non-circular. Note, however, that this is only one example, and the planar shape of 101 formed in the state of overflow is not limited to the shape shown here.

[0146] To find the amount of overflow of the resin film 101, the maximum value of the length Dl of a line segment between one point 1010a on the outer circumference 1010 of the resin film 101 and another point 1010b different from the one point 1010a is found, and then the value D0 of the width of the original (i.e., before overflow) resin film 101' at the position coinciding with the above line segment showing the maximum value is found. The difference (Dl - D0) between Dl and D0 is the above amount of overflow.

[0147] In plan view, the above line segment showing the maximum value in the resin film 101 sometimes passes through the center of the circle in the original resin film 101', in which case the value of the width of the original resin film 101' at the position coinciding with the above line segment showing the maximum value is the diameter of the resin film 101'.

[0148] Note that, here, the amount of overflow of the resin film is explained when the planar shape of the resin film is circular, but the amount of overflow of the resin film can be calculated in the same way in cases other than when the planar shape is circular.

[0149] In the case of attaching the first curable resin film (xl) to the bump formation surface of the wafer for manufacturing a semiconductor chip, the degree of strain of the curable resin film is greatly different between the intermediate stage at which the first curable resin film (xl) starts to intrude into the groove portion while protruding through the first curable resin film (xl) on the upper portion of the bump, and the final stage at which the first curable resin film (xl) fills the groove portion while filling the base portion of the bump. More specifically, the strain of the first curable resin film (xl) is small in the above intermediate stage, and the strain of the first curable resin film (xl) is large in the above final stage.

[0150] For the first curable resin film (xl), by using Gcl as the storage modulus when the strain is small, and using Gc300 as the storage modulus when the strain is large, and making Gcl high and Gc300 low, the value X (= Gcl / Gc300) defined in the above condition (I) is limited to 19 or more and less than 10,000, whereby the excellent effects explained above can be achieved.

[0151] From the viewpoint of more easily exerting the effects of the present application, the upper limit of the value X of the first curable resin film (xl) defined in the above condition (I) is preferably 5000 or less, more preferably 2000 or less, further preferably 1000 or less, still further preferably 500 or less, further more preferably 300 or less, further preferably 100 or less, still further preferably 70 or less.

[0152] Further, from the viewpoint of making the filling property of the groove portion of the wafer for manufacturing a semiconductor chip in the effects of the present application more favorable, the value of X defined in the above condition (I) is preferably 25 or greater, more preferably 30 or greater, further preferably 40 or greater, still further preferably 50 or greater, further more preferably 60 or greater.

[0153] As for the first curable resin film (x1), Gc1 is not particularly limited as long as the value of X defined in the above condition (I) is 19 or greater and less than 10,000.

[0154] Further, from the viewpoint of making the filling property of the groove portion of the wafer for manufacturing a semiconductor chip in the effects of the present application more favorable, Gc1 is preferably 1 x 10 4 ~ 1 x 10 6 Pa, more preferably 3 x 10 4 ~ 7 x 10 5 Pa, further preferably 5 x 10 4 ~ 5 x 10 5 Pa.

[0155] As for the first curable resin film (x1), Gc300 is not particularly limited as long as the value of X is 19 or greater and less than 10,000.

[0156] Further, from the viewpoint of making the filling property of the groove portion of the wafer for manufacturing a semiconductor chip in the effects of the present application more favorable, Gc300 is preferably less than 15,000 Pa, more preferably 10,000 Pa or less, further preferably 5,000 Pa or less, still further preferably 4,000 Pa or less, further more preferably 3,500 Pa or less. Further, from the viewpoint of suppressing shrinkage holes of the first curable resin film (x1), Gc300 is preferably 100 Pa or greater, more preferably 500 Pa or greater, further preferably 1,000 Pa or greater.

[0157] For the first curable resin film (x1), it is preferable that one or both of Gc1 and Gc300 satisfy the above range while satisfying the value of X defined in the above condition (I).

[0158] The storage modulus of the first cured resin film (x1) is not limited to the case where Gc1 and Gc300 are adjusted, and can be easily adjusted by adjusting one or both of the kind and content of the contained components in the first cured resin film (x1). To this end, one or both of the kind and content of the contained components in the composition for forming the first cured resin film (x1) is adjusted. For example, in the case where the first thermosetting resin film-forming composition (x1-1-1) described later is used, the storage modulus of the first cured resin film (x1) can be easily adjusted by adjusting one or both of the kind and content of the main contained components such as the polymer component (A), the filler (D), and the like in the composition, and adjusting one or both of the kind and content of the additive (I) selected from one or more of a rheology modifier, a surfactant, and a silicone oil, or the like.

[0159] For example, when the content of one or both of the above-described filler (D) and the additive (I) in the first cured resin film (x1) and the first cured resin film-forming composition is increased, Gc1 is easily adjusted to a larger value, and as a result, X is easily adjusted to a larger value.

[0160] The first cured resin film (x1) can be composed of one layer (single layer), or can be composed of two or more layers (multiple layers). In the case where the first cured resin film (x1) is composed of multiple layers, the multiple layers can be the same as or different from each other, and the combination of the multiple layers is not particularly limited.

[0161] In the present specification, in the case where the first cured resin film (x1) is not limited, “the multiple layers can be the same as or different from each other” means “all the layers can be the same, all the layers can be different, or only some of the layers can be the same”, and further, “the multiple layers are different from each other” means “at least one of the constituent material and the thickness of each layer is different from each other”.

[0162] From the viewpoint of improving the coatability of the bump-forming surface of the semiconductor wafer for manufacturing semiconductor chips, and the viewpoint of making the filling property into the groove portion of the semiconductor wafer for manufacturing semiconductor chips more favorable, the thickness of the first cured resin film (x1) is preferably 10 μm or more, more preferably 20 μm or more, further preferably 30 μm or more, and more further preferably more than 30 μm. In addition, it is preferably 200 μm or less, more preferably 150 μm or less, further preferably 130 μm or less, more further preferably 100 μm or less, and further more preferably 80 μm or less.

[0163] Here, the “thickness of the layer (X1) of the first cured resin (x1)” refers to the thickness of the entire layer (X1), and for example, the thickness of the layer (X1) composed of multiple layers refers to the total thickness of all the layers constituting the layer (X1).

[0164] Here, the "thickness of the first curable resin film (x1)" refers to the thickness of the entire first curable resin film (x1), and, for example, in the case of a first curable resin film (x1) composed of a plurality of layers, the thickness refers to the total thickness of all the layers constituting the first curable resin film (x1).

[0165] <First curable resin film-forming composition>

[0166] The first curable resin film (x1) can be formed using a first curable resin film-forming composition containing the constituent materials thereof. For example, the first curable resin film (x1) can be formed by applying the first curable resin film-forming composition to the surface on which it is to be formed and drying it as necessary. The ratio of the contents of the components in the first curable resin film-forming composition that do not undergo vaporization at ordinary temperature is generally the same as the ratio of the contents of the components in the first curable resin film (x1). In the present specification, "ordinary temperature" refers to a temperature that is not particularly cooled or heated, i.e., an ordinary temperature, and, for example, temperatures of 15 to 25°C or the like can be mentioned.

[0167] The first thermosetting resin film (x1-1) can be formed using a first thermosetting resin film-forming composition (x1-1-1), and the first energy ray-curable resin film (x1-2) can be formed using a first energy ray-curable resin film-forming composition (x1-2-1). Note that, in the present specification, in the case where the first curable resin film (x1) has both thermosetting and energy ray-curing properties, and the contribution of the thermosetting of the first curable resin film (x1) is greater than the contribution of the energy ray-curing with respect to the first cured resin film (r1) formed by the curing thereof, the first curable resin film (x1) is handled as a thermosetting resin film. Conversely, in the case where the contribution of the energy ray-curing of the first curable resin film (x1) is greater than the contribution of the thermosetting with respect to the curing thereof, the first curable resin film (x1) is handled as an energy ray-curable resin film.

[0168] The application of the first curable resin film-forming composition can be performed using a publicly known method, and, for example, methods using various coaters such as spin coaters, spray coaters, air knife coaters, blade coaters, bar coaters, gravure coaters, roll coaters, knife-over-roll coaters, curtain coaters, die coaters, doctor blade coaters, screen coaters, Mayer rod coaters, and kiss coaters can be mentioned.

[0169] The drying conditions of the first curable resin film-forming composition are not particularly limited, regardless of whether the first curable resin film (x1) is a thermosetting resin film or an energy ray-curable resin film. Among them, in the case where the first curable resin film-forming composition contains a solvent described later, it is preferable to perform heat drying. Furthermore, it is preferable to perform heat drying of the curable resin film-forming composition containing a solvent under conditions of, for example, 70 to 130°C for 10 seconds to 5 minutes. Note that, for the first thermosetting resin film-forming composition (x1-1-1), it is preferable to perform heat drying in a manner that does not cause thermal curing of the composition itself and the first thermosetting resin film (x1-1) formed from the composition.

[0170] Hereinafter, the first thermosetting resin film (x1-1) and the first energy ray-curable resin film (x1-2) will be described in more detail.

[0171] <First thermosetting resin film (x1-1)>

[0172] In the case where the first thermosetting resin film (x1-1) is cured to form the first cured resin film (r1) as a cured product thereof, the curing conditions are not particularly limited as long as the cured product reaches a degree of curing that is sufficient for the function thereof to be exerted, and can be appropriately selected depending on the type of the first thermosetting resin film (x1-1), the use of the cured product, and the like.

[0173] The heating temperature at the time of curing of the first thermosetting resin film (x1-1) is preferably 100 to 200°C, more preferably 110 to 170°C, and particularly preferably 120 to 150°C. In addition, the heating time at the time of thermal curing is preferably 0.5 to 5 hours, more preferably 0.5 to 4 hours, and particularly preferably 1 to 3 hours.

[0174] <First thermosetting resin film-forming composition (x1-1-1)>

[0175] As the first thermosetting resin film-forming composition (x1-1-1), for example, a first thermosetting resin film-forming composition (x1-1-1) (hereinafter, sometimes referred to simply as “composition (x1-1-1)”) containing a polymer component (A), a thermosetting component (B), a filler material (D), and an additive (I) can be exemplified.

[0176] (Polymer component (A))

[0177] The polymer component (A) is a polymer compound for imparting film formability, flexibility, and the like to the first thermosetting resin film (x1-1). The polymer component (A) has thermoplasticity and does not have thermosetting properties. Note that, in the present specification, the polymer compound also includes the product of a condensation reaction.

[0178] The polymer component (A) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) can be only one or two or more. In the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0179] As the polymer component (A), for example, polyvinyl acetal, acrylic resin, urethane resin, phenoxy resin, silicone resin, saturated polyester resin, and the like can be exemplified.

[0180] Among these, the polymer component (A) is preferably polyvinyl acetal from the viewpoint of easily adjusting Gc300 to an appropriate value, thereby adjusting X to an appropriate value.

[0181] As the above polyvinyl acetal in the polymer component (A), publicly known ones can be exemplified.

[0182] Among these, as the preferred polyvinyl acetal, for example, polyvinyl formal, polyvinyl butyral, and the like can be exemplified, and polyvinyl butyral is more preferred.

[0183] As the polyvinyl butyral, polyvinyl butyral having structural units represented by the following formulae (i)-1, (i)-2, and (i)-3 can be exemplified.

[0184] [Chemical Formula 1]

[0185]

[0186] (In the formula, each of l, m, and n is independently an integer of 1 or more.)

[0187] The weight average molecular weight (Mw) of the polyvinyl acetal is preferably 5,000 to 200,000, and more preferably 8,000 to 100,000. By making the weight average molecular weight of the polyvinyl acetal in such a range, the effects of suppressing the remaining of the first thermosetting resin film (x1-1) on the upper portion of the bump when the first thermosetting resin film (x1-1) is attached to the bump forming surface of the wafer for manufacturing a semiconductor chip, the effects of suppressing the overflow of the first thermosetting resin film (x1-1), the effects of suppressing the shrinkage of the first thermosetting resin film (x1-1) and the cured product thereof on the bump forming surface, and the effects of improving the filling property of the first thermosetting resin film (x1-1) into the groove portion are further improved.

[0188] The glass transition temperature (Tg) of the polyvinyl acetal is preferably 40 to 80°C, more preferably 50 to 70°C. By having the Tg of the polyvinyl acetal in this range, the effects of suppressing the remaining of the first thermosetting resin film (x1-1) on the upper portion of the bump, the effect of suppressing the overflow of the first thermosetting resin film (x1-1), the effect of suppressing the shrinkage of the first thermosetting resin film (x1-1) and the cured product thereof on the bump-forming surface, and the effect of improving the filling property of the first thermosetting resin film (x1-1) into the groove portion are further improved when the first thermosetting resin film (x1-1) is attached to the bump-forming surface of the wafer for manufacturing a semiconductor chip.

[0189] The ratio of the three or more kinds of monomers constituting the polyvinyl acetal can be arbitrarily selected.

[0190] As the above-mentioned acrylic resin in the polymer component (A), a known acrylic polymer can be exemplified.

[0191] The weight average molecular weight (Mw) of the acrylic resin is preferably 5,000 to 1,000,000, more preferably 8,000 to 800,000. By having the weight average molecular weight of the acrylic resin in this range, the effects of suppressing the remaining of the first thermosetting resin film (x1-1) on the upper portion of the bump, the effect of suppressing the overflow of the first thermosetting resin film (x1-1), the effect of suppressing the shrinkage of the first thermosetting resin film (x1-1) and the cured product thereof on the bump-forming surface, and the effect of improving the filling property of the first thermosetting resin film (x1-1) into the groove portion are further improved when the first thermosetting resin film (x1-1) is attached to the bump-forming surface of the wafer for manufacturing a semiconductor chip.

[0192] The glass transition temperature (Tg) of the acrylic resin is preferably -50 to 70°C, more preferably -30 to 60°C. By having the Tg of the acrylic resin in this range, the effects of suppressing the remaining of the first thermosetting resin film (x1-1) on the upper portion of the bump, the effect of suppressing the overflow of the first thermosetting resin film (x1-1), the effect of suppressing the shrinkage of the first thermosetting resin film (x1-1) and the cured product thereof on the bump-forming surface, and the effect of improving the filling property of the first thermosetting resin film (x1-1) into the groove portion are further improved when the first thermosetting resin film (x1-1) is attached to the bump-forming surface of the wafer for manufacturing a semiconductor chip.

[0193] In the case where the acrylic resin has two or more kinds of structural units, the glass transition temperature (Tg) of the acrylic resin can be calculated using the Fox formula. As the Tg of the monomer from which the above-mentioned structural unit is derived, the value described in the Polymer Data Handbook or the Adhesion Handbook can be used.

[0194] The monomer constituting the acrylic resin can be only one, or two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

[0195] As the acrylic resin, for example, the following can be given:

[0196] a polymer of one or two or more (meth)acrylates;

[0197] a copolymer of two or more monomers selected from the group consisting of (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylol acrylamide, and the like;

[0198] a copolymer of one or two or more (meth)acrylates and one or two or more monomers selected from the group consisting of (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylol acrylamide, and the like.

[0199] In the present specification, "(meth)acrylic acid" is a concept including both "acrylic acid" and "methacrylic acid". The same applies to terms similar to (meth)acrylic acid, for example, "(meth)acrylate" is a concept including both "acrylate" and "methacrylate", and "(meth)acryloyl" is a concept including both "acryloyl" and "methacryloyl".

[0200] As the (meth)acrylate constituting the acrylic resin, for example, the following can be given: methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, t-butyl (meth)acrylate, amyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate ((meth)acrylate lauryl ester), tridecyl (meth)acrylate, myristyl (meth)acrylate ((meth)acrylate myristyl ester), pentadecyl (meth)acrylate, cetyl (meth)acrylate ((meth)acrylate cetyl ester), heptadecyl (meth)acrylate, stearyl (meth)acrylate ((meth)acrylate stearyl ester), and the like, in which the alkyl group constituting the alkyl ester is a chain structure having 1 to 18 carbon atoms;

[0201] isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, and the like (cycloalkyl (meth)acrylate);

[0202] benzyl (meth)acrylate, and the like (aralkyl (meth)acrylate);

[0203] dicyclopentenyl (meth)acrylate, and the like (cycloalkenyl (meth)acrylate);

[0204] dicyclopentenyl (meth)acrylate, and the like (cycloalkenyl (meth)acrylate);

[0205] (meth)acrylamide;

[0206] glycidyl (meth)acrylate, and the like (glycidyl group-containing (meth)acrylate);

[0207] glycidyl (meth)acrylate, and the like (glycidyl group-containing (meth)acrylate);

[0208] N-methylaminoethyl (meth)acrylate, and the like (substituted amino group-containing (meth)acrylate). Here, the "substituted amino group" means a group in which one or two hydrogen atoms of an amino group are substituted with a group other than a hydrogen atom.

[0209] The acrylic resin can also have a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxyl group, an isocyanate group, or the like, which is a functional group capable of bonding to another compound. The above-described functional group of the acrylic resin can be bonded to another compound via the crosslinking agent (F) described later, or can be directly bonded to another compound without the crosslinking agent (F). By bonding the acrylic resin to another compound via the above-described functional group, there is a tendency, for example, for the reliability of the package obtained using the first thermosetting resin film (x1-1) to be improved.

[0210] In the composition (x1-1-1), the proportion of the content of the polymer component (A) with respect to the total content of all components other than the solvent (i.e., the proportion of the content of the polymer component (A) with respect to the total mass of the first thermosetting resin film (x1-1) in the first thermosetting resin film (x1-1)) is preferably 5 to 25% by mass, more preferably 5 to 15% by mass, regardless of the kind of the polymer component (A).

[0211] (Thermosetting Component (B))

[0212] The thermosetting component (B) is preferably a component having thermosetting properties, which is used to thermally cure the first thermosetting resin film (x1-1) to form a hard cured product.

[0213] The thermosetting component (B) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) can be only one type or two or more types. If there are two or more types, their combination and ratio can be arbitrarily selected.

[0214] Examples of thermosetting components (B) include epoxy thermosetting resins, polyimide resins, and unsaturated polyester resins.

[0215] Of these, the thermosetting component (B) is preferably an epoxy thermosetting resin.

[0216] · Epoxy thermosetting resins

[0217] Epoxy thermosetting resins include epoxy resin (B1) and thermosetting agent (B2).

[0218] The epoxy thermosetting resin contained in the composition (x1-1-1) and the first thermosetting resin film may be only one type or two or more types. If there are two or more types, their combination and ratio can be arbitrarily selected.

[0219] ·Epoxy resin (B1)

[0220] As for epoxy resin (B1), known epoxy resins can be listed, such as: multifunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrides, o-cresol phenolic varnish epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, and other epoxy compounds with more than one function.

[0221] The epoxy resin (B1) can be an epoxy resin having unsaturated hydrocarbon groups. Compared to epoxy resins without unsaturated hydrocarbon groups, epoxy resins with unsaturated hydrocarbon groups have higher compatibility with acrylic resins. Therefore, by using an epoxy resin with unsaturated hydrocarbon groups, there is a tendency to improve the reliability of the encapsulation obtained, for example, by using a first thermosetting resin film (x1-1).

[0222] Examples of epoxy resins containing unsaturated hydrocarbon groups include compounds formed by converting a portion of the epoxy groups in a multifunctional epoxy resin into groups containing unsaturated hydrocarbon groups. Such compounds can be obtained, for example, by reacting (meth)acrylic acid or a derivative thereof with respect to the epoxy groups via an addition reaction.

[0223] In addition, examples of epoxy resins having unsaturated hydrocarbon groups include compounds in which groups having unsaturated hydrocarbon groups are directly bonded to the aromatic rings that constitute the epoxy resin.

[0224] The unsaturated hydrocarbon group is an unsaturated group having polymerizability, and as specific examples thereof, vinyl group, 2-propenyl group (allyl group), (meth)acryloyl group, (meth)acrylamide group, etc. can be exemplified, and an acryloyl group is preferable.

[0225] The number average molecular weight of the epoxy resin (B1) is not particularly limited, but from the viewpoint of the curability of the first thermosetting resin film (x1-1), and the strength and heat resistance of the cured product of the first thermosetting resin film (x1-1), it is preferably 300 to 30,000, more preferably 400 to 10,000, and particularly preferably 500 to 3,000.

[0226] The epoxy equivalent of the epoxy resin (B1) is preferably 100 to 1,000 g / eq, and more preferably 200 to 800 g / eq.

[0227] The epoxy resin (B1) can be used alone or in combination of two or more, and in the case of using two or more in combination, the combination and ratio thereof can be arbitrarily selected.

[0228] • Heat curing agent (B2)

[0229] The heat curing agent (B2) functions as a curing agent for the epoxy resin (B1).

[0230] As the heat curing agent (B2), a compound having two or more functional groups capable of reacting with an epoxy group in one molecule can be exemplified. As the above functional group, a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, a group obtained by anhydridizing an acid group, etc. can be exemplified, and a phenolic hydroxyl group, an amino group, or a group obtained by anhydridizing an acid group is preferable, and a phenolic hydroxyl group or an amino group is more preferable.

[0231] As the phenolic curing agent having a phenolic hydroxyl group in the heat curing agent (B2), a polyfunctional phenol novolac, a biphenyl phenol, a novolac type phenol resin, a dicyclopentadiene-based phenol resin, an aralkyl phenol resin, etc. can be exemplified.

[0232] As the amine curing agent having an amino group in the heat curing agent (B2), a dicyandiamide (hereinafter, sometimes abbreviated as "DICY"), etc. can be exemplified.

[0233] The heat curing agent (B2) can also have an unsaturated hydrocarbon group.

[0234] As the heat curing agent (B2) having an unsaturated hydrocarbon group, a compound in which a part of the hydroxyl group of a phenol resin is substituted with a group having an unsaturated hydrocarbon group, a compound in which a group having an unsaturated hydrocarbon group is directly bonded to the aromatic ring of a phenol resin, etc. can be exemplified.

[0235] The above unsaturated hydrocarbon group in the thermal curing agent (B2) is the same group as the unsaturated hydrocarbon group in the above epoxy resin having an unsaturated hydrocarbon group.

[0236] The number average molecular weight of the resin component such as a polyfunctional phenol aldehyde resin, a novolak type phenol aldehyde resin, a dicyclopentadiene type phenol aldehyde resin, an aralkyl type phenol aldehyde resin, and the like in the thermal curing agent (B2) is preferably 300 to 30,000, more preferably 400 to 10,000, particularly preferably 500 to 3,000.

[0237] The molecular weight of the non-resin component such as a biphenyl, a dicyandiamide, and the like in the thermal curing agent (B2) is not particularly limited, and is preferably, for example, 60 to 500.

[0238] The thermal curing agent (B2) can be used alone or in combination of two or more, and the combination and ratio thereof can be arbitrarily selected in the case of using two or more in combination.

[0239] In the composition (x1-1-1) and the first thermosetting resin film (x1-1), the content of the thermal curing agent (B2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, with respect to 100 parts by mass of the content of the epoxy resin (B1), and can be, for example, any of 5 to 150 parts by mass, 10 to 100 parts by mass, and 15 to 75 parts by mass. By making the above content of the thermal curing agent (B2) be equal to or more than the above lower limit value, the curing of the first thermosetting resin film (x1-1) becomes more easily performed. By making the above content of the thermal curing agent (B2) be equal to or less than the above upper limit value, the moisture absorption rate of the first thermosetting resin film (x1-1) decreases, and the reliability of, for example, a package obtained using the first thermosetting resin film (x1-1) is further improved.

[0240] In the composition (x1-1-1) and the first thermosetting resin film (x1-1), the content of the thermosetting component (B) (for example, the total content of the epoxy resin (B1) and the thermal curing agent (B2)) is preferably 600 to 1000 parts by mass, with respect to 100 parts by mass of the content of the polymer component (A). By making the above content of the thermosetting component (B) be in such a range, the effects of suppressing the remaining of the first thermosetting resin film (x1-1) on the upper portion of the bump, the effects of suppressing the overflow of the first thermosetting resin film (x1-1), the effects of suppressing the shrinkage cavity of the first thermosetting resin film (x1-1) and the cured product thereof on the bump forming surface, and the effects of improving the filling property of the first thermosetting resin film (x1-1) into the groove portion are further improved when the first thermosetting resin film (x1-1) is attached to the bump forming surface of the wafer for manufacturing a semiconductor chip, and a hard cured product can be formed.

[0241] Further, from the aspect of more significantly obtaining such an effect, the content of the thermosetting component (B) can also be appropriately adjusted depending on the kind of the polymer component (A).

[0242] For example, in the case where the polymer component (A) is the above-described polyvinyl acetal, in the composition (xl-1-1) and the first thermosetting resin film (xl-1), the content of the thermosetting component (B) is preferably 600 to 1,000 parts by mass, more preferably 650 to 1,000 parts by mass, and particularly preferably 650 to 950 parts by mass, with respect to 100 parts by mass of the content of the polymer component (A).

[0243] (Filler (D))

[0244] By adjusting the amount of the filler (D) in the composition (xl-1-1) and the first thermosetting resin film (xl-1), the above-described X value can be more easily adjusted. In addition, by adjusting the amount of the filler (D) in the composition (xl-1-1) and the first thermosetting resin film (xl-1), the coefficient of thermal expansion of the cured product of the first thermosetting resin film (xl-1) can be more easily adjusted, for example, by optimizing the coefficient of thermal expansion of the cured product of the first thermosetting resin film (xl-1) with respect to the object to be formed by the cured product, the reliability of the package obtained by using the first thermosetting resin film (xl-1) can be further improved. In addition, by using the first thermosetting resin film (xl-1) containing the filler (D), the moisture absorption rate of the cured product of the first thermosetting resin film (xl-1) can be reduced, or the heat dissipation property can be improved.

[0245] The filler (D) can be any of an organic filler and an inorganic filler, but is preferably an inorganic filler.

[0246] As a preferred inorganic filler, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, and the like; beads obtained by spheroidizing these inorganic fillers; surface-modified products of these inorganic fillers; single-crystal fibers of these inorganic fillers; glass fibers; and the like can be given.

[0247] Among these, the inorganic filler is preferably silica or alumina.

[0248] The filler (D) contained in the composition (xl-1-1) and the first thermosetting resin film (xl-1) can be only one kind, or can be two or more kinds, and in the case of two or more kinds, the combination and ratio thereof can be arbitrarily selected.

[0249] In the composition (x1-1-1), the proportion of the content of the filler material (D) with respect to the total content of all components excluding the solvent (i.e., the proportion of the content of the filler material (D) with respect to the total mass of the first thermosetting resin film (x1-1) in the first thermosetting resin film (x1-1)) is preferably 5 to 45% by mass, more preferably 5 to 40% by mass, and further preferably 5 to 30% by mass. By setting the above proportion within such a range, the effects of suppressing the remaining of the first thermosetting resin film (x1-1) on the upper portion of the bump when the first thermosetting resin film (x1-1) is attached to the bump formation surface of the wafer for manufacturing a semiconductor chip, the effect of suppressing the overflow of the first thermosetting resin film (x1-1), the effect of suppressing the shrinkage cavity of the first thermosetting resin film (x1-1) and the cured product thereof on the bump formation surface, and the effect of improving the filling property of the first thermosetting resin film (x1-1) into the groove portion are further improved, and at the same time, the above-mentioned coefficient of thermal expansion can be adjusted more easily.

[0250] (additive (I))

[0251] By adjusting the kind or amount of the additive (I) in the composition (x1-1-1) and the first thermosetting resin film (x1-1), Gc1 can be adjusted to be appropriate, and thus the above-mentioned X value can be adjusted more easily.

[0252] Among the additive (I) that is preferred in terms of being able to adjust the above-mentioned X value more easily, for example, a rheology modifier, a surfactant, a silicone oil, and the like can be given.

[0253] More specifically, as the above-mentioned rheology modifier, for example, a polyhydroxycarboxylate, a polycarboxylic acid, a polyamide resin, and the like can be given.

[0254] As the above-mentioned surfactant, for example, a modified silicone, an acrylic polymer, and the like can be given.

[0255] As the above-mentioned silicone oil, for example, an aralkyl-modified silicone oil, a modified polydimethylsiloxane, and the like can be given, and as the modification group, an aralkyl group, a polar group such as a hydroxyl group, a group having an unsaturated bond such as a vinyl group and a phenyl group can be given.

[0256] As the additive (I) other than the above-mentioned, for example, a plasticizer, an antistatic agent, an antioxidant, a getter, an ultraviolet absorber, an adhesion promoter, and the like can be given.

[0257] The additive (I) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) can be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof can be arbitrarily selected.

[0258] The content of the additive (I) in the composition (x1-1-1) and the first thermosetting resin film (x1-1) is not particularly limited and can be appropriately adjusted depending on the kind thereof and the purpose.

[0259] For example, in the case of adjusting the above-described X value, the proportion of the content of the additive (I) with respect to the total content of all components other than the solvent in the composition (x1-1-1) (i.e., the proportion of the content of the additive (I) with respect to the total mass of the first thermosetting resin film (x1-1) in the first thermosetting resin film (x1-1)) is preferably 0.5 to 10% by mass, more preferably 0.5 to 7% by mass, and further preferably 0.5 to 5% by mass.

[0260] (Curing accelerator (C))

[0261] The composition (x1-1-1) and the first thermosetting resin film (x1-1) can also contain a curing accelerator (C). The curing accelerator (C) is a component for adjusting the curing speed of the composition (x1-1-1).

[0262] As the preferred curing accelerator (C), for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol, and the like; imidazoles (imidazoles in which one or more hydrogen atoms are replaced with a group other than a hydrogen atom) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and the like; organophosphines (phosphines in which one or more hydrogen atoms are replaced with an organic group) such as tributylphosphine, diphenylphosphine, triphenylphosphine, and the like; tetraphenylborate salts such as tetraphenylborate, triphenylphosphine tetraphenylborate, and the like; and the like can be given. tetraphenylborate, triphenylphosphine tetraphenylborate, and the like.

[0263] The curing accelerator (C) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) can be only one or two or more. In the case of two or more, the combination and the ratio thereof can be arbitrarily selected.

[0264] In the case of using the curing accelerator (C), in the composition (x1-1-1) and the first thermosetting resin film (x1-1), the content of the curing accelerator (C) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the content of the thermosetting component (B). By making the above content of the curing accelerator (C) be equal to or greater than the above lower limit value, the effects brought about by using the curing accelerator (C) can be more remarkably obtained. By making the above content of the curing accelerator (C) be equal to or smaller than the above upper limit value, for example, the effect of suppressing the migration of a high-polarity curing accelerator (C) to the side of the adhesive interface with the adherend in the first thermosetting resin film (x1-1) under high-temperature / high-humidity conditions is improved, and, for example, the reliability of a package obtained using the first thermosetting resin film (x1-1) is further improved.

[0265] (Coupling agent (E))

[0266] The composition (x1-1-1) and the first thermosetting resin film (x1-1) can also contain a coupling agent (E). By using a component having a functional group capable of reacting with an inorganic compound or an organic compound as the coupling agent (E), the adhesiveness and the cohesiveness of the first thermosetting resin film (x1-1) with respect to the adherend can be further improved. In addition, by using the coupling agent (E), for the cured product of the first thermosetting resin film (x1-1), the water resistance can be improved without impairing the heat resistance.

[0267] The coupling agent (E) is preferably a compound having a functional group capable of reacting with the functional group possessed by the polymer component (A), the thermosetting component (B), or the like, and is more preferably a silane coupling agent.

[0268] As the preferred above-mentioned silane coupling agent, for example, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetyloxysilane, imidazole silane, and the like can be exemplified.

[0269] The coupling agent (E) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) can be only one or two or more. In the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0270] In the case of using the coupling agent (E), the content of the coupling agent (E) in the composition (x1-1-1) and the first thermosetting resin film (x1-1) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (A) and the thermosetting component (B). By making the above content of the coupling agent (E) be equal to or greater than the above lower limit value, the effects brought about by the use of the coupling agent (E), such as the improvement in the dispersibility of the filler material (D) in the resin, the improvement in the adhesion of the first thermosetting resin film (x1-1) to the adherend, and the like, can be more remarkably obtained. By making the above content of the coupling agent (E) be equal to or less than the above upper limit value, the occurrence of outgassing can be further suppressed.

[0271] (Crosslinking agent (F))

[0272] In the case of using, as the polymer component (A), a resin having a functional group such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxyl group, an isocyanate group, or the like, which is capable of bonding to other compounds, the composition (x1-1-1) and the first thermosetting resin film (x1-1) can also contain a crosslinking agent (F). The crosslinking agent (F) is a component for causing the above functional group in the polymer component (A) to bond to other compounds to cause crosslinking. By thus causing crosslinking, the initial adhesion and cohesion of the first thermosetting resin film (x1-1) can be adjusted.

[0273] As the crosslinking agent (F), for example, an organic polyisocyanate compound, an organic polyamine compound, a metal chelate-based crosslinking agent (a crosslinking agent having a metal chelate structure), an aziridine-based crosslinking agent (a crosslinking agent having an aziridine group), and the like can be exemplified.

[0274] As the organic polyisocyanate compound, for example, aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds, and alicyclic polyisocyanate compounds (hereinafter, these compounds are sometimes collectively referred to as "aromatic polyisocyanate compounds, etc.") can be given; trimers, isocyanurate bodies, and adducts of the above-described aromatic polyisocyanate compounds, etc.; terminal isocyanate urethane prepolymer, etc. obtained by reacting the above-described aromatic polyisocyanate compounds, etc. with a polyol compound. The above-described "adduct" indicates a reaction product of the above-described aromatic polyisocyanate compound, aliphatic polyisocyanate compound, or alicyclic polyisocyanate compound, and ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, or castor oil, etc. as a low-molecular weight active hydrogen-containing compound. As examples of the above-described adduct, trimethylolpropane xylene diisocyanate adduct, etc. described later can be given. In addition, the "terminal isocyanate urethane prepolymer" indicates a prepolymer having a urethane bond, and an isocyanate group at a terminal portion of a molecule.

[0275] As the organic polyisocyanate compound, more specifically, for example, 2,4-tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; a compound obtained by adding all or part of the hydroxyl groups of a polyol such as trimethylolpropane to any one or two or more of toluene diisocyanate, hexamethylene diisocyanate, and xylylene diisocyanate; lysine diisocyanate, etc. can be given.

[0276] As the organic polyisocyanate compound, more specifically, for example, 2,4-tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; a compound obtained by adding all or part of the hydroxyl groups of a polyol such as trimethylolpropane to any one or two or more of toluene diisocyanate, hexamethylene diisocyanate, and xylylene diisocyanate; lysine diisocyanate, etc. can be given.

[0277] In the case where the organic polyisocyanate compound is used as the crosslinking agent (F), as the polymer component (A), a hydroxyl group-containing polymer is preferably used. In the case where the crosslinking agent (F) has an isocyanate group, and the polymer component (A) has a hydroxyl group, a crosslinking structure can be introduced to the first thermosetting resin film (x1-1) simply by reacting the crosslinking agent (F) with the polymer component (A).

[0278] The crosslinking agent (F) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) can be only one or two or more. In the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0279] In the case of using the crosslinking agent (F), the content of the crosslinking agent (F) in the composition (x1-1-1) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the content of the polymer component (A). By making the above content of the crosslinking agent (F) be equal to or greater than the above lower limit value, the effects brought about by the use of the crosslinking agent (F) can be more remarkably obtained. By making the above content of the crosslinking agent (F) be equal to or less than the above upper limit value, excessive use of the crosslinking agent (F) can be suppressed.

[0280] (Energy ray-curable resin (G))

[0281] The composition (x1-1-1) and the first thermosetting resin film (x1-1) can also contain an energy ray-curable resin (G).

[0282] By making the first thermosetting resin film (x1-1) contain the energy ray-curable resin (G), the properties can be changed by irradiation of energy rays.

[0283] The energy ray-curable resin (G) is a resin obtained by polymerizing (curing) an energy ray-curable compound. As the energy ray-curable compound, for example, a compound having at least one polymerizable double bond in the molecule, preferably an acrylate compound having a (meth)acryloyl group, can be exemplified.

[0284] As the acrylate compound, for example, a (meth)acrylate containing a chain aliphatic skeleton such as trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate; a (meth)acrylate containing a cyclic aliphatic skeleton such as dicyclopentyl di(meth)acrylate; a polyalkylene glycol (meth)acrylate such as polyethylene glycol di(meth)acrylate; an oligoester (meth)acrylate; a urethane (meth)acrylate oligomer; an epoxy-modified (meth)acrylate; a polyether (meth)acrylate other than the above polyalkylene glycol (meth)acrylate; an itaconic acid oligomer, and the like can be exemplified.

[0285] The weight average molecular weight of the energy ray-curable compound is preferably 100 to 30,000, and more preferably 300 to 10,000.

[0286] The energy ray-curable compound used for polymerization can be used singly or in combination of two or more. In the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0287] In the case of using the energy ray-curable resin (G), the content of the energy ray-curable resin (G) is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, further preferably 10 to 85% by mass, based on the total amount of the effective ingredients of the composition (xl-1-1).

[0288] (Photo-polymerization initiator (H))

[0289] In the case where the composition (xl-1-1) and the first thermosetting resin film (xl-1) contain the energy ray-curable resin (G), in order to efficiently perform the polymerization reaction of the energy ray-curable resin (G), a photo-polymerization initiator (H) can be contained in the composition (xl-1-1) and the first thermosetting resin film (xl-1).

[0290] As the photo-polymerization initiator (H), for example, benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoate, benzoin benzoate methyl ester, benzoin dimethyl ether, 2,4-diethylthioxanthone, 1-hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzil, benzpinacol, butanedione, 1,2-diphenylmethane, 2-hydroxy-2-methyl-l-[4-(l-methylethenyl)phenyl]propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, and 2-chloroanthraquinone, and the like can be exemplified.

[0291] The photo-polymerization initiator (H) can be used singly or in combination of two or more. In the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0292] In the composition (xl-1-1), the content of the photo-polymerization initiator (H) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, further preferably 2 to 5 parts by mass, relative to 100 parts by mass of the content of the energy ray-curable resin (G).

[0293] (Other ingredients)

[0294] The composition (x1-1-1) and the first thermosetting resin film (x1-1) can also contain other components than any of the above-mentioned polymer component (A), thermosetting component (B), curing accelerator (C), filler (D), coupling agent (E), crosslinking agent (F), energy ray-curable resin (G), photopolymerization initiator (H), and additive (I) without impairing the effects of the present application.

[0295] The above-mentioned other components contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) can be only one, or two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

[0296] The content of the above-mentioned other components of the composition (x1-1-1) and the first thermosetting resin film (x1-1) is not particularly limited, and can be appropriately selected depending on the purpose.

[0297] (Solvent)

[0298] The composition (x1-1-1) preferably further contains a solvent. The handling property of the composition (x1-1-1) containing a solvent becomes good.

[0299] The above-mentioned solvent is not particularly limited, and as a preferable solvent, for example, hydrocarbons such as toluene, xylene, and the like; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropane-l-ol), 1-butanol, and the like; esters such as ethyl acetate, and the like; ketones such as acetone, methyl ethyl ketone, and the like; ethers such as tetrahydrofuran, and the like; amides (compounds having an amide bond) such as dimethylformamide, N-methylpyrrolidone, and the like, and the like can be exemplified.

[0300] The solvent contained in the composition (x1-1-1) can be only one, or two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

[0301] As a more preferable solvent among the solvents contained in the composition (x1-1-1), from the viewpoint of more uniformly mixing the contained components in the composition (x1-1-1), methyl ethyl ketone and the like can be exemplified.

[0302] The content of the solvent of the composition (x1-1-1) is not particularly limited, and for example, can be appropriately selected depending on the kind of the components other than the solvent.

[0303] <Method for producing the first thermosetting resin film-forming composition (x1-1-1)>

[0304] The first thermosetting resin film-forming composition (x1-1-1) can be obtained by compounding each component for constituting the composition.

[0305] The order of addition of the components is not particularly limited, and two or more components can be added at the same time.

[0306] The method of mixing the components is not particularly limited, and can be appropriately selected from known methods such as a method in which a stirrer or a stirring paddle is rotated to mix the components, a method in which a mixer is used to mix the components, and a method in which ultrasonic waves are applied to mix the components.

[0307] The temperature and the time during the addition and mixing of the components are not particularly limited as long as the components do not deteriorate, and can be appropriately adjusted. The temperature is preferably 15 to 30°C.

[0308] <First energy ray-curable resin film (x1-2)>

[0309] The curing conditions during the curing of the first energy ray-curable resin film (x1-2) to form the first cured resin film (r1) as a cured product thereof are not particularly limited as long as the cured product has a sufficient degree of curing to exhibit its function, and can be appropriately selected depending on the type of the first energy ray-curable resin film (x1-2), the use of the cured product, and the like.

[0310] For example, the intensity of the energy rays during the curing of the first energy ray-curable resin film (x1-2) is preferably 180 to 280 mW / cm 2 . In addition, the light amount of the energy rays during the curing is preferably 450 to 1000 mJ / cm 2 .

[0311] <First energy ray-curable resin film-forming composition (x1-2-1)>

[0312] As the first energy ray-curable resin film-forming composition (x1-2-1), for example, a first energy ray-curable resin film-forming composition (x1-2-1) (hereinafter, sometimes referred to simply as "composition (x1-2-1)") containing an energy ray-curable component (a), a filler, and an additive can be given.

[0313] (Energy ray-curable component (a))

[0314] The energy ray-curable component (a) is a component that is cured by irradiation of energy rays, and is a component for imparting film formability, flexibility, and the like to the first energy ray-curable resin film (x1-2).

[0315] The energy ray-curable component (a) is preferably uncured, preferably has adhesiveness, and more preferably is uncured and has adhesiveness.

[0316] As the energy ray-curable component (a), for example, a polymer (al) having an energy ray-curable group and having a weight average molecular weight of 80,000 to 2,000,000, and a compound (a2) having an energy ray-curable group and having a molecular weight of 100 to 80,000 can be exemplified. The above polymer (al) can be a polymer of which at least a part is crosslinked by a crosslinking agent, or can be a polymer which is not crosslinked.

[0317] • a polymer (al) having an energy ray-curable group and having a weight average molecular weight of 80,000 to 2,000,000

[0318] As the polymer (al) having an energy ray-curable group and having a weight average molecular weight of 80,000 to 2,000,000, for example, an acrylic resin (al-1) polymerized from an acrylic polymer (all) having a functional group capable of reacting with a group possessed by another compound, and an energy ray-curable compound (a12) having a group which reacts with the above functional group, and an energy ray-curable group such as an energy ray-curable double bond.

[0319] As the above functional group capable of reacting with a group possessed by another compound, for example, a hydroxyl group, a carboxyl group, an amino group, a substituted amino group (a group in which one or two hydrogen atoms of an amino group are substituted with a group other than a hydrogen atom), an epoxy group, and the like can be exemplified. Among them, from the viewpoint of preventing corrosion of a circuit of a semiconductor wafer, a semiconductor chip, or the like, it is preferable that the above functional group be a group other than a carboxyl group.

[0320] Among these, it is preferable that the above functional group be a hydroxyl group.

[0321] • an acrylic polymer (all) having a functional group

[0322] As the acrylic polymer (all) having the above functional group, for example, a polymer copolymerized from an acrylic monomer having the above functional group, and an acrylic monomer not having the above functional group, or a polymer further copolymerized with a monomer (a non-acrylic monomer) other than the above monomers can be exemplified.

[0323] In addition, the above acrylic polymer (all) can be a random copolymer, or can be a block copolymer.

[0324] As the acrylic monomer having the above functional group, for example, a hydroxyl group-containing monomer, a carboxyl group-containing monomer, an amino group-containing monomer, a substituted amino group-containing monomer, an epoxy group-containing monomer, and the like can be exemplified.

[0325] As the hydroxyl group-containing monomer, for example, (meth)acrylic acid hydroxyl methyl ester, (meth)acrylic acid 2-hydroxyethyl ester, (meth)acrylic acid 2-hydroxypropyl ester, (meth)acrylic acid 3-hydroxypropyl ester, (meth)acrylic acid 2-hydroxybutyl ester, (meth)acrylic acid 3-hydroxybutyl ester, (meth)acrylic acid 4-hydroxybutyl ester, and the like (hydroxyalkyl (meth)acrylate) ; vinyl alcohol, allyl alcohol, and the like (non-(meth)acrylic unsaturated alcohol (unsaturated alcohol not having a (meth)acryl skeleton) ) can be exemplified.

[0326] As the carboxyl group-containing monomer, for example, (meth)acrylic acid, crotonic acid, and the like (ethylenically unsaturated monocarboxylic acid (monocarboxylic acid having an ethylenic unsaturated bond) ) ; fumaric acid, itaconic acid, maleic acid, citraconic acid, and the like (ethylenically unsaturated dicarboxylic acid (dicarboxylic acid having an ethylenic unsaturated bond) ) ; anhydride of the above ethylenically unsaturated dicarboxylic acid; 2-carboxyethyl (meth)acrylate, and the like (carboxyalkyl (meth)acrylate) can be exemplified.

[0327] The acrylic monomer having the above functional group constituting the above acrylic polymer (a11) is preferably a hydroxyl group-containing monomer, a carboxyl group-containing monomer, and more preferably a hydroxyl group-containing monomer.

[0328] The acrylic monomer having the above functional group constituting the above acrylic polymer (a11) can be only one, or two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

[0329] As the acrylic monomer not having the above functional group, for example, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, t-butyl (meth)acrylate, amyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate ((meth)acrylate lauryl ester), tridecyl (meth)acrylate, myristyl (meth)acrylate ((meth)acrylate myristyl ester), pentadecyl (meth)acrylate, cetyl (meth)acrylate ((meth)acrylate cetyl ester), heptadecyl (meth)acrylate, stearyl (meth)acrylate ((meth)acrylate stearyl ester), and the like (alkyl (meth)acrylate in which alkyl constituting alkyl ester is a chain structure having 1 to 18 carbon atoms) can be exemplified.

[0330] As the acrylic monomer not having the above-mentioned functional group, there can be mentioned, for example, (meth)acrylic acid methoxymethyl ester, (meth)acrylic acid methoxyethyl ester, (meth)acrylic acid ethoxymethyl ester, (meth)acrylic acid ethoxyethyl ester and the like containing an alkoxyalkyl group; (meth)acrylic acid aryl esters such as (meth)acrylic acid phenyl ester and the like having an aromatic group; (meth)acrylamide and derivatives thereof which are not cross-linkable; (meth)acrylic acid N,N-dimethylaminoethyl ester, (meth)acrylic acid N,N-dimethylaminopropyl ester and the like having a non-cross-linkable tertiary amino group, and the like.

[0331] The acrylic monomer not having the above-mentioned functional group constituting the above-mentioned acrylic polymer (a11) can be only one, or two or more, and in the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0332] As the above-mentioned non-acrylic monomer, there can be mentioned, for example, olefins such as ethylene, norbornene and the like; vinyl acetate; styrene and the like.

[0333] The above-mentioned non-acrylic monomer constituting the above-mentioned acrylic polymer (a11) can be only one, or two or more, and in the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0334] In the above-mentioned acrylic polymer (a11), the proportion (content) of the amount of the structural unit derived from the acrylic monomer having the above-mentioned functional group with respect to the total amount of the structural units constituting the polymer is preferably 0.1 to 50% by mass, more preferably 1 to 40% by mass, particularly preferably 3 to 30% by mass. By making the above-mentioned proportion within such a range, the content of the energy ray-curable group in the above-mentioned acrylic resin (a1-1) obtained by copolymerizing the above-mentioned acrylic polymer (a11) and the above-mentioned energy ray-curable compound (a12) can easily adjust the degree of curing of the cured product of the first energy ray-curable resin film (x1-2) to a preferable range.

[0335] The above-mentioned acrylic polymer (a11) constituting the above-mentioned acrylic resin (a1-1) can be only one, or two or more, and in the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0336] In the composition (x1-2-1), the proportion of the content of the acrylic resin (a1-1) with respect to the total content of the components other than the solvent (i.e., the proportion of the content of the acrylic resin (a1-1) in the first energy ray-curable resin film (x1-2) with respect to the total mass of the above-mentioned film) is preferably 1 to 40% by mass, more preferably 2 to 30% by mass, particularly preferably 3 to 20% by mass.

[0337] • Energy ray-curable compound (a12)

[0338] The energy ray-curable compound (a12) is preferably a compound having one or two or more selected from the group consisting of isocyanate group, epoxy group and carboxyl group as a group capable of reacting with the functional group possessed by the aforementioned acrylic polymer (a11), and is more preferably a compound having isocyanate group as the aforementioned group. In the case where the aforementioned energy ray-curable compound (a12) has isocyanate group as the aforementioned group, for example, the isocyanate group easily reacts with the hydroxyl group of the acrylic polymer (a11) having hydroxyl group as the aforementioned functional group.

[0339] The aforementioned energy ray-curable compound (a12) preferably has one to five, and more preferably one to two of the aforementioned energy ray-curable groups in one molecule.

[0340] As the aforementioned energy ray-curable compound (a12), there can be mentioned, for example:

[0341] 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(bisacryloyloxymethyl)ethyl isocyanate;

[0342] diisocyanate compound or polyisocyanate compound, acryloyl monoisocyanate compound obtained by reacting with hydroxyethyl (meth)acrylate;

[0343] diisocyanate compound or polyisocyanate compound, polyol compound, and acryloyl monoisocyanate compound obtained by reacting with hydroxyethyl (meth)acrylate, and the like.

[0344] Among these, the aforementioned energy ray-curable compound (a12) is preferably 2-methacryloyloxyethyl isocyanate.

[0345] The aforementioned energy ray-curable compound (a12) constituting the aforementioned acrylic resin (a1-1) can be only one, or two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

[0346] In the above acrylic resin (a1-1), the ratio of the content of the energy ray-curable group derived from the above energy ray-curable compound (a12) to the content of the above functional group derived from the above acrylic polymer (a11) is preferably 20 to 120 mol%, more preferably 35 to 100 mol%, particularly preferably 50 to 100 mol%. By making the ratio of the above contents within such a range, the adhesion of the cured product of the energy ray-curable resin film (x1-2) becomes greater. Note that in the case where the above energy ray-curable compound (a12) is a monofunctional (one molecule has one of the above groups) compound, the upper limit of the ratio of the above contents is 100 mol%, but in the case where the above energy ray-curable compound (a12) is a polyfunctional (one molecule has two or more of the above groups) compound, the upper limit of the ratio of the above contents is sometimes more than 100 mol%.

[0347] The weight average molecular weight (Mw) of the above polymer (a1) is preferably 100,000 to 2,000,000, more preferably 300,000 to 1,500,000.

[0348] In the case where the above polymer (a1) is a polymer in which at least a part thereof has been crosslinked by a crosslinking agent, the above polymer (a1) can be a polymer polymerized from a monomer which does not belong to any of the above described monomers as constituting the acrylic polymer (a11) and which has a group which reacts with a crosslinking agent, and which has been crosslinked by the group which reacts with the above crosslinking agent, or can be a polymer which has been crosslinked by a group which reacts with the above functional group derived from the above energy ray-curable compound (a12).

[0349] The above polymer (a1) contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) can be only one kind, or can be two or more kinds, and in the case where there are two or more kinds, the combination and ratio thereof can be arbitrarily selected.

[0350] As the above energy ray-curable group in the compound (a2) having a molecular weight of 100 to 80,000, a group containing an energy ray-curable double bond can be exemplified, and as a preferred group, a (meth)acryloyl group, a vinyl group, and the like can be exemplified.

[0351] The above compound (a2) is not particularly limited as long as it is a compound satisfying the above conditions, and a low molecular weight compound having an energy ray-curable group, an epoxy resin having an energy ray-curable group, a phenol-aldehyde resin having an energy ray-curable group, and the like can be exemplified.

[0352] As the low-molecular-weight compound having an energy ray-curable group in the above compound (a2), for example, a multifunctional monomer or oligomer, etc. can be exemplified, and an acrylate compound having a (meth)acryloyl group is preferable.

[0353] As the above acrylate compound, for example, the following can be exemplified:

[0354] 2-hydroxy-3-(meth)acryloyloxypropyl methacrylate, polyethylene glycol di(meth)acrylate, propoxylated ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxypolyethoxy)phenyl]propane, ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxydiethoxy)phenyl]propane, 9,9-bis[4-(2-(meth)acryloyloxyethoxy)phenyl]fluorene, 2,2-bis[4-((meth)acryloyloxypolypropoxy)phenyl]propane, tricyclodecane dimethanol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, polytetramethylene glycol di(meth)acrylate, ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxyethoxy)phenyl]propane, neopentyl glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 2-hydroxy-1,3-bis(meth)acryloyloxypropane, and the like bifunctional (meth)acrylate;

[0355] tris(2-(meth)acryloyloxyethyl) isocyanurate, ε-caprolactone-modified tris(2-(meth)acryloyloxyethyl) isocyanurate, ethoxylated glycerol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, bis(trimethylolpropane) tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol poly(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and the like multifunctional (meth)acrylate;

[0356] multifunctional (meth)acrylate oligomer such as urethane (meth)acrylate oligomer, etc.

[0357] As the epoxy resin having an energy ray-curable group in the above-mentioned compound (a2), the phenol-aldehyde resin having an energy ray-curable group, those described in the paragraph 0043 and the like of "Japanese Patent Application Laid-Open No. 2013-194102" can be used, for example. Such resins also belong to the resins constituting the thermosetting component described later, but are handled as the above-mentioned compound (a2) in the present application.

[0358] The weight average molecular weight of the above-mentioned compound (a2) is preferably 100 to 30,000, more preferably 300 to 10,000.

[0359] The above-mentioned compound (a2) contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) can be only one, or two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

[0360] (Polymer (b) not having an energy ray-curable group)

[0361] In the case where the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) contain the above-mentioned compound (a2) as the above-mentioned energy ray-curable component (a), it is preferable to further contain a polymer (b) not having an energy ray-curable group.

[0362] The above-mentioned polymer (b) can be a polymer of which at least a part is crosslinked by a crosslinking agent, or a polymer not crosslinked.

[0363] As the polymer (b) not having an energy ray-curable group, for example, an acrylic polymer, a phenoxy resin, a urethane resin, a polyester, a rubber-based resin, an acrylic urethane resin, and the like can be exemplified.

[0364] Among these polymers, the above-mentioned polymer (b) is preferably an acrylic polymer (hereinafter, sometimes simply referred to as "acrylic polymer (b-1)").

[0365] The acrylic polymer (b-1) can be those known in the art, and for example, it can be a homopolymer of an acrylic monomer, a copolymer of two or more kinds of acrylic monomers, or a copolymer of one or two or more kinds of acrylic monomers and one or two or more kinds of monomers other than the acrylic monomers (non-acrylic monomers).

[0366] As the above-mentioned acrylic monomer constituting the acrylic polymer (b-1), for example, an alkyl (meth)acrylate, a (meth)acrylate having a cyclic skeleton, a glycidyl group-containing (meth)acrylate, a hydroxyl group-containing (meth)acrylate, a substituted amino group-containing (meth)acrylate, and the like can be exemplified. Here, the "substituted amino group" is as described above.

[0367] As the above-mentioned (meth)acrylic acid alkyl ester, for example, the same as the above-mentioned acrylic monomer (alkyl group constituting alkyl ester is (meth)acrylic acid alkyl ester having a chain structure of 1 to 18 carbon atoms, etc.) constituting the acrylic polymer (a11) described in the foregoing, which does not have the above-mentioned functional group, can be exemplified.

[0368] As the above-mentioned (meth)acrylic acid ester having a cyclic skeleton, for example, the following can be exemplified:

[0369] (meth)acrylic acid isobornyl ester, (meth)acrylic acid dicyclopentyl ester, and the like (meth)acrylic acid cycloalkyl ester;

[0370] (meth)acrylic acid benzyl ester, and the like (meth)acrylic acid aralkyl ester;

[0371] (meth)acrylic acid dicyclopentenyl ester, and the like (meth)acrylic acid cycloalkenyl ester;

[0372] (meth)acrylic acid dicyclopentenyloxyethyl ester, and the like (meth)acrylic acid cycloalkenyloxyalkyl ester, and the like.

[0373] As the above-mentioned glycidyl group-containing (meth)acrylic acid ester, for example, (meth)acrylic acid glycidyl ester, and the like can be exemplified.

[0374] As the above-mentioned hydroxyl group-containing (meth)acrylic acid ester, for example, (meth)acrylic acid hydroxymethyl ester, (meth)acrylic acid 2-hydroxyethyl ester, (meth)acrylic acid 2-hydroxypropyl ester, (meth)acrylic acid 3-hydroxypropyl ester, (meth)acrylic acid 2-hydroxybutyl ester, (meth)acrylic acid 3-hydroxybutyl ester, (meth)acrylic acid 4-hydroxybutyl ester, and the like can be exemplified.

[0375] As the above-mentioned substituted amino group-containing (meth)acrylic acid ester, for example, (meth)acrylic acid N-methylaminoethyl ester, and the like can be exemplified.

[0376] As the above-mentioned non-acrylic monomer constituting the acrylic polymer (b-1), for example, olefins such as ethylene, norbornene, and the like; vinyl acetate; styrene, and the like can be exemplified.

[0377] As the above-mentioned polymer (b) not having an energy ray-curable group, at least a part of which is crosslinked by a crosslinking agent, for example, a polymer obtained by reacting a reactive functional group in the above-mentioned polymer (b) with a crosslinking agent can be exemplified.

[0378] The reactive functional group is appropriately selected according to the type of the crosslinking agent, etc., and is not particularly limited. For example, in the case where the crosslinking agent is a polyisocyanate compound, as the reactive functional group, a hydroxyl group, a carboxyl group, an amino group, etc. can be listed, and among these, a hydroxyl group having high reactivity with an isocyanate group is preferred. In the case where the crosslinking agent is an epoxy compound, as the reactive functional group, a carboxyl group, an amino group, an amide group, etc. can be listed, and among these, a carboxyl group having high reactivity with an epoxy group is preferred. Note that, from the aspect of preventing corrosion of the circuit of the semiconductor wafer, the semiconductor chip, it is preferred that the reactive functional group be a group other than a carboxyl group.

[0379] As the polymer (b) having the above-described reactive functional group and not having an energy ray-curable group, a polymer obtained by polymerizing a monomer having at least the above-described reactive functional group can be listed. In the case of an acrylic polymer (b-1), a monomer having the above-described reactive functional group can be used as any one or both of the above-described acrylic monomer and the non-acrylic monomer listed as the monomer constituting the polymer. As the above-described polymer (b) having a hydroxyl group as the reactive functional group, a polymer obtained by polymerizing a hydroxyl group-containing (meth)acrylate can be listed, and in addition thereto, a polymer obtained by polymerizing a monomer in which one or two or more hydrogen atoms in one or two or more of the above-described acrylic monomers or non-acrylic monomers listed above are replaced with the above-described reactive functional group can be listed.

[0380] In the above-described polymer (b) having a reactive functional group, the proportion (content) of the amount of the structural unit derived from the monomer having a reactive functional group with respect to the total amount of the structural units constituting the polymer is preferably 1 to 20% by mass, and more preferably 2 to 10% by mass. By making the above-described proportion within this range, the degree of crosslinking in the above-described polymer (b) will be within a more preferable range.

[0381] The weight average molecular weight (Mw) of the polymer (b) not having an energy ray-curable group is preferably 10,000 to 2,000,000, and more preferably 100,000 to 1,500,000, from the aspect of making the film formability of the composition (x1-2-1) even better.

[0382] The polymer (b) not having an energy ray-curable group contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) can be only one, or two or more, and in the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0383] As the composition (x1-2-1), a composition containing any one or both of the above-mentioned polymer (a1) and the above-mentioned compound (a2) can be exemplified. Among them, in the case where the composition (x1-2-1) contains the above-mentioned compound (a2), it is preferable to further contain a polymer (b) having no energy ray-curable group, and in this case, it is preferable to further contain the above-mentioned polymer (a1). In addition, the composition (x1-2-1) can also contain none of the above-mentioned compound (a2) while containing the above-mentioned polymer (a1) and the polymer (b) having no energy ray-curable group.

[0384] In the case where the composition (x1-2-1) contains the above-mentioned polymer (a1), the above-mentioned compound (a2) and the polymer (b) having no energy ray-curable group, in the composition (x1-2-1), the content of the above-mentioned compound (a2) is preferably 10 to 400 parts by mass, more preferably 30 to 350 parts by mass, relative to 100 parts by mass of the total content of the above-mentioned polymer (a1) and the polymer (b) having no energy ray-curable group.

[0385] In the composition (x1-2-1), the proportion of the combined content of the above-mentioned energy ray-curable component (a) and the polymer (b) having no energy ray-curable group, relative to the total content of the components other than the solvent (i.e., the proportion of the combined content of the above-mentioned energy ray-curable component (a) and the polymer (b) having no energy ray-curable group in the first energy ray-curable resin film (x1-2), relative to the total mass of the film) is preferably 5 to 90% by mass, more preferably 10 to 80% by mass, particularly preferably 20 to 70% by mass. By making the above-mentioned proportion within such a range, the energy ray curability of the first energy ray-curable resin film (x1-2) becomes more excellent.

[0386] (Filling material)

[0387] By adjusting the amount of the filler material in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2), the above X value can be more easily adjusted. In addition, by adjusting the amount of the filler material in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2), the coefficient of thermal expansion of the cured product of the first energy ray-curable resin film (x1-2) can be more easily adjusted, for example, by optimizing the coefficient of thermal expansion of the cured product of the first energy ray-curable resin film (x1-2) with respect to the object on which the protective film is to be formed, the reliability of the package obtained using the first energy ray-curable resin film (x1-2) is further improved. In addition, by using the first energy ray-curable resin film (x1-2) containing the filler material, the moisture absorption rate of the cured product of the first energy ray-curable resin film (x1-2) can also be reduced, or the heat dissipation property can be improved.

[0388] The above filler material contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) is the same as the filler material (D) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) described in the foregoing.

[0389] The form of containing the filler material in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) can be the same as the form of containing the filler material (D) in the composition (x1-1-1) and the first thermosetting resin film (x1-1).

[0390] The filler material contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) can be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and ratio thereof can be arbitrarily selected.

[0391] In the composition (x1-2-1), the proportion of the content of the filler material with respect to the total content of all components other than the solvent (i.e., the proportion of the content of the filler material in the first energy ray-curable resin film (x1-2) with respect to the total mass of the first energy ray-curable resin film (x1-2)) can be, for example, 5 to 45% by mass. By having the above proportion in such a range, the effects of suppressing the remaining of the first energy ray-curable resin film (x1-2) on the upper part of the bump, the effect of suppressing the overflow of the first energy ray-curable resin film (x1-2), the effect of suppressing the shrinkage cavity of the first energy ray-curable resin film (x1-2) and the cured product thereof on the bump forming surface, and the improvement effect of the filling property of the first energy ray-curable resin film (x1-2) into the groove portion are further improved when the first energy ray-curable resin film (x1-2) is attached to the bump forming surface of the wafer for manufacturing a semiconductor chip, and the above coefficient of thermal expansion can be more easily adjusted.

[0392] (additives)

[0393] By adjusting the kind or amount of the additive in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2), the above X value can be more easily adjusted.

[0394] The above additive contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) is the same as the additive (I) contained in the composition (x1-1-1) and the first thermosetting resin film (x1-1) described in the foregoing.

[0395] For example, from the aspect that the above X value can be more easily adjusted, as the preferred additive, a rheology modifier, a surfactant, a silicone oil, and the like can be cited.

[0396] The form of containing the additive in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) can be the same as the form of containing the additive (I) in the composition (x1-1-1) and the first thermosetting resin film (x1-1).

[0397] The additive contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) can be only one, or two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

[0398] The content of the additive in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) is not particularly limited, and can be appropriately adjusted depending on the kind, purpose thereof.

[0399] For example, in the case of adjusting the above X value as the purpose, in the composition (x1-2-1), the proportion of the content of the additive with respect to the total content of all components other than the solvent (i.e., the proportion of the content of the additive in the first energy ray-curable resin film (x1-2) with respect to the total mass of the first energy ray-curable resin film (x1-2)) can be, for example, 0.5 to 10 mass%.

[0400] (other components)

[0401] The composition (x1-2-1) and the first energy ray-curable resin film (x1-2) can also contain other components that do not belong to the energy ray-curable component (a), the above filler, and the above additive, within a range that does not impair the effects of the present application.

[0402] As the above other components, for example, a thermosetting component, a photopolymerization initiator, a coupling agent, a crosslinking agent, and the like can be exemplified. For example, by using a composition (x1-2-1) containing the above energy ray-curable component (a) and a thermosetting component, the adhesion of the first energy ray-curable resin film (x1-2) to an adherend can be improved by heating, and the strength of the cured product of the first energy ray-curable resin film (x1-2) is also improved.

[0403] As the above thermosetting component, photopolymerization initiator, coupling agent, and crosslinking agent in the composition (x1-2-1), the same as the thermosetting component (B), photopolymerization initiator, coupling agent (E), and crosslinking agent (F) in the composition (x1-1-1) can be exemplified, respectively.

[0404] The above other components contained in the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) can be only one, or two or more, and in the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0405] The content of the above other components of the composition (x1-2-1) and the first energy ray-curable resin film (x1-2) is not particularly limited, and can be appropriately selected according to the purpose.

[0406] (Solvent)

[0407] The composition (x1-2-1) preferably further contains a solvent. The handleability of the composition (x1-2-1) containing a solvent becomes good.

[0408] As the solvent contained in the composition (x1-2-1), the same as the solvent contained in the aforementioned composition (x1-1-1) can be exemplified.

[0409] The solvent contained in the composition (x1-2-1) can be only one, or two or more, and in the case of two or more, the combination and ratio thereof can be arbitrarily selected.

[0410] The content of the solvent of the composition (x1-2-1) is not particularly limited, and can be appropriately selected according to the kind of the components other than the solvent, for example.

[0411] <Manufacturing method of first energy ray-curable resin film-forming composition>

[0412] The first energy ray-curable resin film-forming composition (x1-2-1) can be obtained by compounding each component for constituting the composition.

[0413] The first energy ray-curable resin film-forming composition (x1-2-1) can be produced by the same method as in the case of the aforementioned first thermosetting resin film-forming composition (x1-1-1), except for the kind of the components, for example.

[0414] [First composite sheet (α1)]

[0415] The first cured resin film (x1) can be laminated with the first support sheet (Y1) to constitute the first composite sheet (α1), as described above.

[0416] The first composite sheet (α1) can be constituted, for example, as shown in Figure 3

[0417] The first composite sheet (α1) can be constituted, for example, as shown in Figure 3 The first composite sheet (α1) can be constituted, for example, as shown in

[0418] The first composite sheet (α1) can be constituted, for example, as shown in Figures 4-6

[0419] The first composite sheet (α1) can be constituted, for example, as shown in Figure 4 The first composite sheet (α1) can be constituted, for example, as shown in

[0420] The first composite sheet (α1) can be constituted, for example, as shown in Figure 5 The first composite sheet (α1) can be constituted, for example, as shown in

[0421] The first composite sheet (α1) can be constituted, for example, as shown in Figure 6 The first composite sheet (α1) can be constituted, for example, as shown in Figure 6 ​​The first composite sheet (α1c) shown is suitable for use when performing thinning processing by grinding the back surface of the semiconductor chip-making wafer after the layer (X1) of the first curable resin (x1) of the first composite sheet (α1c) is attached to the bump formation surface of the semiconductor chip-making wafer, since it has a back grinding tape as the first support sheet (Y1).

[0422] Hereinafter, the first curable resin (x1) and the first support sheet (Y1) for the first composite sheet (α1) will be described.

[0423] <First support sheet (Y1)>

[0424] The first support sheet (Y1) functions as a support body for supporting the first curable resin (x1).

[0425] The first support sheet (Y1) can be composed only of the base material 51 as shown in Figure 4 , can be a laminate of the base material 51 and the adhesive layer 61 as shown in Figure 5 , or can be a laminate in which the base material 51, the intermediate layer 71, and the adhesive layer 61 are sequentially laminated as shown in Figure 6 . The laminate in which the base material 51, the intermediate layer 71, and the adhesive layer 61 are sequentially laminated is suitably used as a back grinding sheet (b-BG).

[0426] Hereinafter, the base material of the first support sheet (Y1), the adhesive layer and the intermediate layer that the first support sheet (Y1) can optionally have will be described.

[0427] (Base material)

[0428] The base material is in the form of a sheet or a film, and as a material constituting it, various resins such as the following can be listed.

[0429] As the resin constituting the base material, for example, the following resins can be mentioned: polyethylenes such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE); polyolefins other than polyethylenes such as polypropylene, polybutylene, polybutadiene, polymethylpentene, norbornene resin; ethylene-based copolymers (copolymers obtained using ethylene as a monomer) such as ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic ester copolymer, ethylene-norbornene copolymer; chloroethylenes such as polyvinyl chloride, chloroethylene copolymer (resin obtained using chloroethylene as a monomer); polystyrene; polycycloolefin; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene 2,6-naphthalate, wholly aromatic polyester having all structural units having aromatic ring groups; copolymers of two or more of the above polyesters; poly(meth)acrylate; polyurethane; polyurethane acrylate; polyimide; polyamide; polycarbonate; fluororesin; polyacetal; modified polyphenylene ether; polyphenylene sulfide; polysulfone; polyether ketone; and the like.

[0430] Further, as the resin constituting the base material, a polymer alloy such as a mixture of the above-described polyester and a resin other than the polyester can be mentioned. In the polymer alloy of the above-described polyester and a resin other than the polyester, the amount of the resin other than the polyester is preferably small.

[0431] Further, as the resin constituting the base material, a modified resin such as an ionomer using one or two or more of the above-described resins exemplified so far can be mentioned.

[0432] The resin constituting the base material can be used singly or in combination of two or more. In the case where two or more resins constitute the base material, the combination and ratio thereof can be arbitrarily selected.

[0433] The base material can be a single layer (monolayer) or a multilayer of two or more layers. In the case where the base material is a multilayer, the layers can be the same as or different from each other, and the combination of the layers is not particularly limited.

[0434] The thickness of the base material is preferably 5 μm to 1,000 μm, more preferably 10 μm to 500 μm, further preferably 15 μm to 300 μm, and more further preferably 20 μm to 150 μm.

[0435] Here, the "thickness of the base material" means the thickness of the entire base material, and for example, in the case of a base material composed of a plurality of layers, the thickness means the total thickness of all the layers constituting the base material.

[0436] The substrate is preferably a material having high thickness accuracy, i.e., a material in which the thickness deviation is preferably suppressed regardless of the position. Among the above-mentioned constituent materials, as a material having high thickness accuracy that can be used to constitute such a substrate, for example, polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, ethylene-vinyl acetate copolymer, and the like can be given.

[0437] In addition to the above-mentioned main constituent material such as a resin, the substrate can contain various known additives such as a filler, a colorant, an antistatic agent, an antioxidant, an organic lubricant, a catalyst, a softening agent (plasticizer), and the like.

[0438] The substrate can be transparent or non-transparent, can be colored according to the purpose, or can have other layers vapor-deposited thereon. In addition, in the case where the first curable resin film (x1) is a first energy ray-curable resin film (x1-2), and in the case where the adhesive layer is an energy ray-curable adhesive layer, the substrate is preferably a material that transmits energy rays.

[0439] The substrate can be manufactured using a known method. For example, a substrate containing a resin can be manufactured by molding a resin composition containing the above-mentioned resin.

[0440] (Adhesive layer)

[0441] The adhesive layer is in a sheet or film shape, and contains an adhesive.

[0442] As the adhesive, for example, an acrylic resin (an adhesive formed of a resin having a (meth)acryloyl group), a urethane resin (an adhesive formed of a resin having a urethane bond), a rubber resin (an adhesive formed of a resin having a rubber structure), a silicone resin (an adhesive formed of a resin having a siloxane bond), an epoxy resin (an adhesive formed of a resin having an epoxy group), a polyvinyl ether, a polycarbonate, and the like can be given. Among these, an acrylic resin is preferred.

[0443] Note that, in the present application, the "adhesive resin" is a concept including both a resin having adhesion and a resin having adhesiveness, for example, not only including a case where the resin itself has adhesion, but also including a resin that exhibits adhesion by being used in combination with other components such as an additive, a resin that exhibits adhesiveness by the presence of a trigger such as heat or water, and the like.

[0444] The adhesive layer can be only one layer (single layer), or can be a plurality of layers. In the case where the adhesive layer is a plurality of layers, the plurality of layers can be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.

[0445] The thickness of the adhesive layer is preferably 1 μm to 1000 μm, more preferably 5 μm to 500 μm, and further preferably 10 μm to 100 μm. Here, the "thickness of the adhesive layer" refers to the thickness of the entire adhesive layer, for example, the thickness of an adhesive layer composed of multiple layers refers to the total thickness of all the layers constituting the adhesive layer.

[0446] The adhesive layer can be a layer formed using an energy ray-curable adhesive, or a layer formed using a non-energy ray-curable adhesive. The adhesive layer formed using an energy ray-curable adhesive can easily be adjusted in physical properties before and after curing.

[0447] (intermediate layer)

[0448] The intermediate layer is in a sheet or film shape, and the constituent material thereof is not particularly limited as long as it is appropriately selected according to the purpose. For example, in the case where the purpose is to suppress deformation of the first cured resin film (rl) due to reflection of the shape of the bump present on the semiconductor surface in the protective film covering the semiconductor surface, as a preferred constituent material of the intermediate layer, from the viewpoint of high concave-convex followability and further improved adhesion of the intermediate layer, urethane (meth) acrylate and the like can be cited.

[0449] The intermediate layer can be a single layer (monolayer), or can be a multilayer of two or more layers. In the case where the intermediate layer is a multilayer, the plurality of layers can be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.

[0450] The thickness of the intermediate layer can be appropriately adjusted according to the height of the bump of the semiconductor surface to be protected, but from the viewpoint that the influence on the bump having a high height can also be easily absorbed, it is preferably 50 μm to 600 μm, more preferably 70 μm to 500 μm, and further preferably 80 μm to 400 μm. Here, the "thickness of the intermediate layer" refers to the thickness of the entire intermediate layer, for example, the thickness of an intermediate layer composed of multiple layers refers to the total thickness of all the layers constituting the intermediate layer.

[0451] Next, the manufacturing method of the first composite sheet (al) will be described.

[0452] [Manufacturing method of the first composite sheet (al)]

[0453] The first composite sheet (al) can be manufactured by sequentially stacking the above-described layers in a manner to form a corresponding positional relationship.

[0454] For example, in the case where the adhesive layer or the intermediate layer is to be layered on the base material in the production of the first support sheet (Y1), the adhesive layer or the intermediate layer can be layered by applying the adhesive composition or the composition for forming an intermediate layer on the base material, and drying, or irradiating energy rays as necessary.

[0455] As the application method, for example, spin coating, spray coating, bar coating, blade coating, roll coating, roll-knife coating, doctor blade coating, die coating, gravure coating, and the like can be mentioned.

[0456] On the other hand, for example, in the case where the first cured resin (x1) is to be further layered on the adhesive layer layered on the base material, the layer (X1) of the first cured resin (x1) can be directly formed by applying the thermosetting resin composition (x1-1-1) or the energy ray-curable resin composition (x1-2-1) on the adhesive layer.

[0457] Likewise, in the case where the adhesive layer is to be further layered on the intermediate layer layered on the base material, the adhesive layer can be directly formed by applying the adhesive composition on the intermediate layer.

[0458] In this way, in the case where a layered structure of two layers in succession is formed using an arbitrary composition, a layer can be newly formed by further applying the composition on the layer formed from the above composition. Among them, it is preferable to form the layered structure of two layers in succession by previously forming the later-layered layer of the two layers on another release film using the above composition, and then joining the exposed surface of the formed layer on the opposite side from the side in contact with the above release film to the exposed surface of the already-formed remaining layer. At this time, the above composition is preferably applied to the release-treated surface of the release film. The release film can be removed as necessary after the layered structure is formed.

[0459] [Second composite sheet (a2)]

[0460] The second composite sheet (a2) is not particularly limited as long as it is a configuration capable of forming a protective film on the back surface of the semiconductor wafer, and can adopt, for example, the same configuration as the first composite sheet (al).

[0461] Therefore, the second cured resin film (x2) possessed by the second composite sheet (a2) can be of the same material and configuration as the above first cured resin film (x1).

[0462] Note that, since the back surface of the semiconductor wafer is generally flat without bumps or groove portions, the second cured resin film (x2) is not required to satisfy the condition (I) of the first cured resin film (x1). Therefore, in the second cured resin film (x2), the value of X can be 18 or less, and can be 10,000 or more.

[0463] (Coloring agent(J))

[0464] Here, from the viewpoint of improving the visual recognizability of the printed characters formed by laser marking and improving the design of semiconductor chips by making the scratches on the back of semiconductor chips less observable, it is preferable that the second curable resin film (x2) and the composition for forming the second curable resin film (x2) contain a colorant (J).

[0465] As coloring agents (J), examples include known coloring agents such as inorganic pigments, organic pigments, and organic dyes.

[0466] Examples of organic pigments and dyes mentioned above include: ammonium pigments, anthocyanin pigments, terpinen pigments, coronium pigments, squaric acid-cyanine pigments, and azurite pigments. Pigments, polymethystyl pigments, naphthoquinone pigments, pyran Phthalocyanine pigments, phthalocyanine pigments, naphthyl phthalocyanine pigments, naphthyl imide pigments, azo pigments, condensed azo pigments, indigo pigments, pyrenone pigments, perylene pigments, di... Azide pigments, quinacridone pigments, isoindolineone pigments, quinolineone pigments, pyrrole pigments, thioindigo pigments, metal complex pigments (metal complex salt dyes), dithiol metal complex pigments, indophenol pigments, triallylmethane pigments, anthraquinone pigments, naphthol pigments, azomethyl alkaloid pigments, benzimidazole pigments, pinantrone pigments, and reducing pigments, etc.

[0467] Examples of inorganic pigments mentioned above include: carbon black, cobalt pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, ITO (indium tin oxide) pigments, and ATO (antimony tin oxide) pigments.

[0468] The colorant (J) contained in the second curable resin film (x2) and the composition for forming the second curable resin film can be only one type or two or more types. When there are two or more colorants (J), their combination and ratio can be arbitrarily selected.

[0469] In the case of using the colorant (J), the content of the colorant (J) in the second curable resin film (x2) is appropriately adjusted according to the purpose. For example, as described above, the second cured resin film (r2) which is a cured product formed by curing the second curable resin film (x2) is sometimes subjected to printing by laser irradiation, and by adjusting the content of the colorant (J) in the second curable resin (x2), the light transmittance of the protective film is adjusted, and thus the visual recognition of the printing can be adjusted. In addition, by adjusting the content of the colorant (J), the design property of the protective film can be improved, and thus the grinding marks on the back surface of the semiconductor wafer can be less likely to be observed. In view of these, in the second curable resin film-forming composition used for forming the second curable resin film (x2), the proportion of the content of the colorant (J) with respect to the total content of all components other than the solvent (also referred to as the total mass of the solid components of the second curable resin film-forming composition) (i.e., the content of the colorant (J) in the second curable resin film (x2)) is preferably 0.1 to 10% by mass, more preferably 0.1 to 7.5% by mass, and particularly preferably 0.1 to 5% by mass. By making the above content of the colorant (J) be equal to or greater than the above lower limit value, the effects brought about by using the colorant (J) can be more significantly obtained. In addition, by making the above content of the colorant (J) be equal to or less than the above upper limit value, the decrease in the light transmittance of the second curable resin film (x2) can be suppressed.

[0470] Note that the colorant (J) can also be contained in the above first curable resin film (x1) and the first curable resin film-forming composition. However, from the viewpoint of ensuring the visual recognition of the dicing intended lines of the wafer for manufacturing semiconductor chips, the content of the colorant (J) is preferably an amount within a range in which the transparency is at a level at which the visual recognition of the dicing intended lines can be ensured.

[0471] In addition, the second support sheet (Y2) possessed by the second composite sheet (α2) can have the same configuration as the above first support sheet (Y1). Specifically, the second support sheet (Y2) can be, like the first support sheet (Y1), Figure 4 a material composed only of the base material 51 as shown in FIG. 10, can be an adhesive sheet in which the base material 51 and the adhesive layer 61 are laminated as shown in FIG. 11, or can be an adhesive sheet in which the base material 51, the intermediate layer 71, and the adhesive layer 61 are laminated as shown in FIG. 12. Figure 5 Figure 6 a material composed only of the base material 51 as shown in FIG. 10, can be an adhesive sheet in which the base material 51 and the adhesive layer 61 are laminated as shown in FIG. 11, or can be an adhesive sheet in which the base material 51, the intermediate layer 71, and the adhesive layer 61 are laminated as shown in FIG. 12.

[0472] The base material, the intermediate layer, and the adhesive layer possessed by the second support sheet (Y2) can have the same configuration and material as the base material, the intermediate layer, and the adhesive layer possessed by the first support sheet (Y1).

[0473] [Method of using the first curable resin film (x1)] ​

[0474] The first curable resin film (x1) is used to form a cured resin film (first cured resin film (r1)) as a protective film on both the bump formation surface and the side surface of the semiconductor chip having a bump formation surface provided with a bump.

[0475] More specifically, the first curable resin film (x1) is used to form a cured resin film (first cured resin film (r1)) as a protective film on both the bump formation surface and the side surface of the semiconductor chip having a bump formation surface provided with a bump by a manufacturing method of a semiconductor chip described later using a wafer manufactured using a semiconductor chip having a bump formation surface provided with a bump and a groove portion as a division predetermined line.

[0476] [Method of using the second curable resin film (x2)]

[0477] The second curable resin film (x2) is used to form a cured resin film (second cured resin film (r2)) as a protective film on the back surface of the semiconductor chip having a bump formation surface provided with a bump.

[0478] More specifically, the first curable resin film (x1) is used to form a cured resin film (second cured resin film (r2)) as a protective film on the back surface of the semiconductor chip having a bump formation surface provided with a bump by a process (T) of a manufacturing method of a semiconductor chip described later using a wafer manufactured using a semiconductor chip having a bump formation surface provided with a bump and a groove portion as a division predetermined line.

[0479] [Method of using the first composite sheet (al)]

[0480] The first composite sheet (al) is used to form a cured resin film (first cured resin film (r1)) as a protective film on both the bump formation surface and the side surface of the semiconductor chip having a bump formation surface provided with a bump.

[0481] More specifically, the first composite sheet (al) is used to form a cured resin film (first cured resin film (r1)) as a protective film on both the bump formation surface and the side surface of the semiconductor chip having a bump formation surface provided with a bump by a manufacturing method of a semiconductor chip described later using a wafer manufactured using a semiconductor chip having a bump formation surface provided with a bump and a groove portion as a division predetermined line.

[0482] [Method of using the second composite sheet (a2)]

[0483] The second composite sheet (a2) is used to form a cured resin film (second cured resin film (r2)) as a protective film on the back surface of the semiconductor chip having a bump formation surface provided with a bump.

[0484] More specifically, the second composite sheet (a2) is used to form a cured resin film (second cured resin film (r2)) as a protective film on the back surface of the semiconductor chip having the bump-forming surface provided with the bumps by the process (T) of the manufacturing method of the semiconductor chip described later using a wafer for manufacturing a semiconductor chip having a bump-forming surface provided with bumps and a groove portion as a division predetermined line.

[0485] [Manufacturing method of semiconductor chip of the present application]

[0486] The process diagram of the manufacturing method of the semiconductor chip of the present application is shown in Figure 7

[0487] The manufacturing method of the semiconductor chip of the present application roughly includes a process (S1) of preparing a wafer for manufacturing a semiconductor chip, a process (S2) of sticking a first composite sheet (a1), a process (S3) of curing a first curable resin (x1), and a process (S4) of performing singulation, and further includes a process (S-BG) of polishing the back surface of the wafer for manufacturing a semiconductor chip.

[0488] In the manufacturing method of the semiconductor chip of one embodiment of the present application, the above-described first curable resin film (x1) can also be used, but from the viewpoint of improving the handling property and the like, it is preferable to use the above-described first composite sheet (a1).

[0489] More specifically, the manufacturing method of the semiconductor chip of one embodiment of the present application uses the above-described first composite sheet (a1) and sequentially includes the following processes (S1) to (S4).

[0490] • Process (S1): a process of preparing a wafer for manufacturing a semiconductor chip in which a groove portion as a division predetermined line is formed on a bump-forming surface of a semiconductor wafer having the bump-forming surface provided with a bump in a manner not reaching the back surface;

[0491] • Process (S2): a process of pressing and sticking a first curable resin (x1) to the above-described bump-forming surface of the above-described wafer for manufacturing a semiconductor chip, and filling the above-described first curable resin (x1) into the above-described groove portion formed on the above-described wafer for manufacturing a semiconductor chip while covering the above-described bump-forming surface of the above-described wafer for manufacturing a semiconductor chip with the first curable resin (x1);

[0492] • Process (S3): a process of curing the above-described first curable resin (x1) to obtain a wafer for manufacturing a semiconductor chip with a first cured resin film (r1);

[0493] ​• Step (S4): a step of singulating the semiconductor wafer with the first cured resin film (r1) formed on the bump-forming surface and the side surface of the semiconductor chip, thereby obtaining a semiconductor chip whose bump-forming surface and side surface are covered with the first cured resin film (r1),

[0494] After the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or in the step (S4), the following step (S-BG) is further included.

[0495] • Step (S-BG): a step of grinding the back surface of the semiconductor wafer

[0496] By the manufacturing method including the above steps, a semiconductor chip in which not only the bump-forming surface and the side surface but also the first cured resin film (r1) is covered, which is excellent in strength and in which peeling of the first cured resin film (r1) as a protective film is less likely to occur, can be obtained.

[0497] Note that the "covered" here means that the first cured resin film (r1) is formed on at least the bump-forming surface and the side surface of one semiconductor chip along the shape of the semiconductor chip. That is, the present application is clearly distinguished from a sealing technique in which a plurality of semiconductor chips are sealed in resin.

[0498] Hereinafter, the manufacturing method of the semiconductor chip of the present application will be described in detail with respect to each step.

[0499] Note that in the following description, the "semiconductor chip" is simply referred to as "chip" and the "semiconductor wafer" is simply referred to as "wafer".

[0500] [Step (S1)]

[0501] An example of the semiconductor wafer prepared in the step (S1) is illustrated in a plan view in Figure 8 and in a cross-sectional view in Figure 9 .

[0502] In the step (S1), a semiconductor wafer 10 for semiconductor chip is prepared, which is formed with a groove portion 13 as a division predetermined line on a bump-forming surface 11a of a semiconductor wafer 11 having the bump-forming surface 11a provided with a bump 12 in a manner not reaching a back surface 11b.

[0503] Note that in Figure 8 , the illustration of the bump is omitted.

[0504] The shape of the bump 12 is not particularly limited and can be any shape as long as it can be in contact with an electrode or the like on a substrate for mounting the chip to be fixed.

[0505] For example, in Figure 9 The bump 12 is formed in a spherical shape in this embodiment, but the bump 12 can be a spheroid. The spheroid can be, for example, a spheroid stretched in a direction perpendicular to the bump formation surface 11a of the wafer 11, or a spheroid stretched in a direction horizontal to the bump formation surface 11a of the wafer 11. Alternatively, the bump 12 can be a pillar shape.

[0506] The height of the bump 12 is not particularly limited and can be appropriately changed according to design requirements.

[0507] For example, 30 μm to 300 μm, preferably 60 μm to 250 μm, and more preferably 80 μm to 200 μm.

[0508] Note that the "height of the bump 12" refers to the height of the portion existing at the highest position from the bump formation surface 11a when one bump is focused on.

[0509] The number of the bumps 12 is not particularly limited and can be appropriately changed according to design requirements.

[0510] The wafer 11 is a semiconductor wafer on the surface of which a circuit such as a wiring, a capacitor, a diode, and a transistor is formed. The material of the wafer is not particularly limited and can be, for example, a silicon wafer, a silicon carbide wafer, a compound semiconductor wafer, a glass wafer, and a sapphire wafer.

[0511] The size of the wafer 11 is not particularly limited, and is typically 8 inches (200 mm in diameter) or more and preferably 12 inches (300 mm in diameter) or more from the viewpoint of improving the batch efficiency. Note that the shape of the wafer is not limited to a circular shape, and can be, for example, a square shape such as a square shape and a rectangular shape. In the case of a square wafer, the size of the wafer 11 is preferably the length of the longest side be the above size (diameter) or more from the viewpoint of improving the batch efficiency.

[0512] The thickness of the wafer 11 is not particularly limited, but is preferably 100 μm to 1,000 μm, more preferably 200 μm to 900 μm, and further preferably 300 μm to 800 μm from the viewpoint of easily suppressing warping caused by shrinkage when the first curable resin (x1) is cured and the viewpoint of suppressing the polishing amount of the back surface 11b of the wafer 11 in a subsequent step, thereby shortening the time required for back surface polishing.

[0513] The bump formation surface 11a of the semiconductor chip production wafer 10 prepared in the process (S1) is formed with a plurality of groove portions 13 in a lattice shape as a division predetermined line at the time of singulation of the semiconductor chip production wafer 10. The plurality of groove portions 13 are cut-in grooves formed at the time of dicing before grinding, and are formed to a depth shallower than the thickness of the wafer 11, so that the deepest portion of the groove portions 13 does not reach the back surface 11b of the wafer 11. The plurality of groove portions 13 can be formed by cutting using a wafer cutting device provided with a cutting blade and the like, which is publicly known. Note that the plurality of groove portions 13 can also be formed by cutting using a laser and the like without using a blade.

[0514] Note that the plurality of groove portions 13 can be formed in any shape as long as the semiconductor chips produced thereby are formed to a desired size and shape, and it is not necessary to form the groove portions 13 in a lattice shape as shown in the drawing. Also, the size of the semiconductor chips is generally about 0.5 mm x 0.5 mm to 1.0 mm x 1.0 mm, but is not limited to this size. Figure 8

[0515] The width of the groove portions 13 is preferably 10 μm to 2,000 μm, more preferably 30 μm to 1,000 μm, further preferably 40 μm to 500 μm, and still further preferably 50 μm to 300 μm, from the viewpoint of the filling property of the first curable resin (xl).

[0516] The depth of the groove portions 13 can be adjusted in accordance with the thickness of the wafer used and the required chip thickness, and is preferably 30 μm or more.

[0517] The aspect ratio of the groove portions 13 can be 2 to 6, 2.5 to 5, or 3 to 5.

[0518] The semiconductor chip production wafer 10 prepared in the process (S1) is supplied to the process (S2).

[0519] [Process (S2)]

[0520] Figure 10 An outline of the process (S2) is shown.

[0521] In the process (S2), the first curable resin (xl) is pressed and attached to the bump formation surface 11a of the semiconductor chip production wafer 10.

[0522] Here, the first curable resin (xl) is preferably used after being laminated on a support sheet, from the viewpoint of the handling property of the first curable resin (xl).

[0523] ​Therefore, in the step (S2), it is preferable to press and adhere the first composite sheet (al) having a laminated structure in which the first support sheet (Yl) and the layer (Xl) of the first curable resin (xl) are laminated, to the bump formation surface 11a of the semiconductor chip manufacturing wafer 10 with the layer (Xl) as the adhering surface.

[0524] By the step (S2), as shown in Figure 10 the bump formation surface 11a of the semiconductor chip manufacturing wafer 10 is covered with the first curable resin (xl), and the first curable resin (xl) is filled into the groove portion 13 formed in the semiconductor chip manufacturing wafer 10.

[0525] By filling the first curable resin (xl) into the groove portion 13 formed in the semiconductor chip manufacturing wafer 10, the portion that will become the side surface of the semiconductor chip when the semiconductor chip manufacturing wafer 10 is singulated in the step (S4) can be covered with the first curable resin (xl). That is, by the step (S2), a covering that is necessary for excellent strength of the semiconductor chip while suppressing peeling of the first cured resin film (rl) as a protective film, which is a precursor of the first cured resin film (rl) covering the side surface of the semiconductor chip, can be formed.

[0526] Note that, from the viewpoint of good filling of the first curable resin (xl) into the groove portion 13, the pressing force when the first composite sheet (al) is adhered to the semiconductor chip manufacturing wafer 10 is preferably 1 kPa to 200 kPa, more preferably 5 kPa to 150 kPa, and further preferably 10 kPa to 100 kPa.

[0527] Note that the pressing force when the first composite sheet (al) is adhered to the semiconductor chip manufacturing wafer 10 can be appropriately varied from the initial stage to the final stage of the adhesion. For example, from the viewpoint of further good filling of the first curable resin (xl) into the groove portion 13, it is preferable to set the pressing force at the initial stage of the adhesion to be low and to slowly increase the pressing force.

[0528] In addition, when the first composite sheet (al) is adhered to the semiconductor chip manufacturing wafer 10, in the case where the first curable resin (xl) is a thermosetting resin, from the viewpoint of further good filling of the first curable resin (xl) into the groove portion 13, heating is preferably performed. In the case where the first curable resin (xl) is a thermosetting resin, the first curable resin (xl) temporarily increases in flowability due to heating, and solidification occurs by continued heating. For this reason, by performing heating within the range in which the flowability of the first curable resin (xl) is increased, the first curable resin (xl) easily spreads throughout the entire groove portion 13, and the filling of the first curable resin (xl) into the groove portion 13 can be further improved.

[0529] As a specific heating temperature (bonding temperature), 50°C to 150°C is preferable, 60°C to 130°C is more preferable, and 70°C to 110°C is further preferable.

[0530] Note that the heating treatment of the first curable resin (x1) is not included in the curing treatment of the first curable resin (x1).

[0531] Further, when the first composite sheet (al) is bonded to the wafer 10 for manufacturing a semiconductor chip, it is preferable to perform the bonding under a reduced pressure environment. By this, the groove portion 13 becomes under a negative pressure, and the first curable resin (x1) is easily spread over the entire groove portion 13. As a result, the filling property of the first curable resin (x1) into the groove portion 13 becomes more favorable. As a specific pressure of the reduced pressure environment, 0.001 kPa to 50 kPa is preferable, 0.01 kPa to 5 kPa is more preferable, and 0.05 kPa to 1 kPa is further preferable.

[0532] In addition, from the viewpoint of making the filling property of the first curable resin (x1) into the groove portion 13 more favorable, the thickness of the layer (X1) of the first curable resin (x1) in the first composite sheet (al) is preferably greater than 30 μm and 200 μm or less, more preferably 60 μm to 150 μm, and further preferably 80 μm to 130 μm.

[0533] Further, since the layer (X1) of the first curable resin (x1) is formed of the first curable resin (x1), the above condition (I) is satisfied. Therefore, the value of X is 19 or greater and less than 10,000, and thus the effects of suppressing the remaining of the first curable resin (x1) on the upper portion of the bump 12, the effects of suppressing the overflow of the layer (X1) of the first curable resin (x1), and the effects of suppressing the shrinkage of the first cured resin film (rl) as the first curable resin (x1) and the cured product thereof on the bump forming surface 11a are excellent when the first composite sheet (al) is bonded to the bump forming surface 11a of the wafer 10 for manufacturing a semiconductor chip, and the filling property of the first curable resin (x1) into the groove portion 13 is also favorable.

[0534] Here, the first support sheet (Y1) possessed by the first composite sheet (al) preferably supports the first curable resin (x1) while also functioning as a back grinding sheet.

[0535] In this case, when the back surface 11b of the wafer 11 is ground in a state where the first composite sheet (al) is bonded, the first support sheet (Y1) functions as a back grinding sheet, and the implementation of the back grinding process becomes easy.

[0536] [Process (S3), Process (S4), and Process (S-BG)]

[0537] By the above-described steps up to the step (S2), a laminate in which the first composite sheet (al) is adhered and laminated on the wafer 10 for manufacturing semiconductor chips can be formed. The laminate is preferably subjected to the process involved in any of the first to fourth embodiments described below in correspondence with the timing of implementing the process (S-BG).

[0538] Hereinafter, the processes (S3) and (S4) will be described with interludes of the description on the timing of implementing the process (S-BG) with respect to the first to fourth embodiments.

[0539] <First Embodiment>

[0540] In the first embodiment, the process (S-BG) can be performed as shown in FIG. 1 after the step (S2) and before the step (S3). Figure 7

[0541] Figure 11 A diagram relating to the first embodiment is shown.

[0542] (First Embodiment: Process (S-BG))

[0543] In the first embodiment, the process (S-BG) is first implemented. Specifically, as shown in (1-a) of FIG. 1, the back surface 1 lb of the wafer 10 for manufacturing semiconductor chips is ground in a state where the first composite sheet (al) is adhered. Figure 11 "BG" in (1-a) of FIG. 1 indicates back grinding, which is also the same in the following drawings. Next, as shown in (1-b) of FIG. 1, the first support sheet (Yl) is peeled from the first composite sheet (al). Figure 11 Figure 11

[0544] The amount of grinding when the back surface 1 lb of the wafer 10 for manufacturing semiconductor chips is ground is only required to be an amount at least to expose the bottom of the groove portion 13 of the wafer 10 for manufacturing semiconductor chips, but the first solidifiable resin (xl) filled in the groove portion 13 can also be ground at the same time as the wafer 10 for manufacturing semiconductor chips is ground by further grinding.

[0545] In the first embodiment, since the first support sheet (Yl) is peeled before the process (S3) is implemented, even if the first solidifiable resin (xl) is a thermosetting resin and heating treatment for curing is to be implemented in the process (S3), the first support sheet (Yl) is not required to have heat resistance. Therefore, the first support sheet (Yl) has improved design freedom.

[0546] (First Embodiment: Process (S3)) ​​​

[0547] After the process (S-BG) is performed, the process (S3) is performed. Specifically, as shown in (1-c) of FIG. 1, the first curable resin (xl) is cured to obtain a semiconductor chip manufacturing wafer 10 with a first cured resin film (rl). Figure 11

[0548] The first cured resin film (rl) formed by curing the first curable resin (xl) is stronger than the first curable resin (xl) at normal temperature. Therefore, by forming the first cured resin film (rl), the bump neck portion can be well protected. In addition, in the process (S4) shown in (1-d) of FIG. 1, by singulating the semiconductor chip manufacturing wafer 10 with the first cured resin film (rl), a semiconductor chip whose side surface is also covered with the first cured resin film (rl) can be obtained, and thus a semiconductor chip with excellent strength can be obtained. Furthermore, peeling of the first cured resin film (rl) as a protective film can also be suppressed. Figure 11

[0549] (First Embodiment: Curing Method)

[0550] The curing of the first curable resin (xl) can be performed by any of heat curing and curing based on energy ray irradiation, in accordance with the kind of curable component contained in the first curable resin (xl).

[0551] As conditions in the case of performing heat curing, the curing temperature is preferably 100 to 200°C, more preferably 110 to 170°C, particularly preferably 120 to 150°C. In addition, the heating time at the time of the above heat curing is preferably 0.5 to 5 hours, more preferably 0.5 to 4 hours, particularly preferably 1 to 3 hours.

[0552] As conditions in the case of performing curing based on energy ray irradiation, they can be appropriately set in accordance with the kind of energy ray used, for example, in the case of using ultraviolet rays, the illuminance is preferably 180 to 280 mW / cm 2 , and the light amount is preferably 450 to 1000 mJ / cm 2 .

[0553] ​​Here, in the process of curing the first curable resin (x1) to form the first cured resin film (r1), from the viewpoint of removing bubbles and the like that are sometimes mixed in when the groove portion 13 is filled with the first curable resin (x1) in the step (S2), the first curable resin (x1) is preferably a thermosetting resin. That is, in the case where the first curable resin (x1) is a thermosetting resin, the first curable resin (x1) temporarily increases in flowability due to heating, and then cures by continued heating. By utilizing this phenomenon, not only can bubbles and the like that are sometimes mixed in when the groove portion 13 is filled with the first curable resin (x1) be removed when the flowability of the first curable resin (x1) increases, thereby achieving a more favorable state of filling of the first curable resin (x1) into the groove portion 13, but also the first curable resin (x1) can be cured.

[0554] In addition, from the viewpoint of shortening the curing time, the first curable resin (x1) is preferably an energy ray-curable resin.

[0555] Note that details regarding the first curable resin (x1) used to form the first cured resin film (r1) will be described later.

[0556] (First Embodiment: Step (S4))

[0557] After the step (S3) is performed, the step (S4) is performed. Specifically, as shown in (1-d) of FIG. 1, the portion of the first cured resin film (r1) of the wafer 10 in which the semiconductor chip with the first cured resin film (r1) is formed in the groove portion is cut along the division predetermined line. Figure 11

[0558] The cutting can be appropriately performed using a blade cutting method, a laser cutting method, or the like, which are conventionally known.

[0559] Thus, a semiconductor chip 40 in which at least the bump formation surface 11a and the side surface are covered with the first cured resin film (r1) can be obtained.

[0560] ​The semiconductor chip 40 has excellent strength because the bump-forming surface 11a and the side surface are covered with the first cured resin film (r1). In addition, because the bump-forming surface 11a and the side surface are continuously covered with the first cured resin film (r1) without a gap, the exposed portion of the interface between the bump-forming surface 11a and the first cured resin film (r1) does not appear on the side surface of the semiconductor chip 40. The exposed portion of the interface between the bump-forming surface 11a and the first cured resin film (r1) is likely to be the starting point of film peeling. The semiconductor chip 40 of the present application does not have such an exposed portion, and thus film peeling from the exposed portion is unlikely to occur during the process of cutting the semiconductor chip from the wafer 10 to produce the semiconductor chip 40, and after the production. Therefore, the semiconductor chip 40, in which peeling of the first cured resin film (r1) as a protective film is suppressed, can be obtained.

[0561] Note that, in the case where the portion of the first cured resin film (r1) of the semiconductor chip-equipped wafer 10 formed in the groove portion is cut along the division predetermined line in the process (S4), the first cured resin film (r1) is preferably transparent. By making the first cured resin film (r1) transparent, the semiconductor wafer 11 can be observed through the transparent first cured resin film (r1), and thus the visual recognition of the division predetermined line can be ensured. Thus, the cutting along the division predetermined line can be easily performed.

[0562] <Second Embodiment>

[0563] In the second embodiment, the process (S-BG) can be performed after the process (S3) and before the process (S4), as shown in Figure 7

[0564] Figure 12 A diagram relating to the second embodiment is shown.

[0565] (Second Embodiment: Process (S3))

[0566] In the second embodiment, the process (S3) is first performed. Specifically, as shown in Figure 12 (2-a), the first curable resin (x1) is cured in the state where the first composite sheet (al) is attached, and thus the semiconductor chip-equipped wafer 10 with the first cured resin film (r1) is obtained.

[0567] ​The first cured resin film (rl) formed by curing the first curable resin (xl) is stronger than the first curable resin (xl) at normal temperature. Therefore, by forming the first cured resin film (rl), the bump neck portion can be favorably protected. In addition, in the process (S4), by singulating the semiconductor chip with the first cured resin film (rl) as the wafer 10, a semiconductor chip whose side surface is also covered with the first cured resin film (rl) can be obtained, and thus a semiconductor chip excellent in strength can be obtained. Furthermore, peeling of the first cured resin film (rl) as a protective film can also be suppressed.

[0568] The curing method can be the same as the curing method described in the first embodiment.

[0569] By performing the heat curing treatment without peeling the first support sheet (Yl), the flow on the surface of the first curable resin (xl) that occurs temporarily when the first curable resin (xl) is cured can be suppressed using the first support sheet (Yl) at the time of heat curing, and thus the planarity of the first cured resin film (rl) on the bump formation surface can be improved. In addition, by curing the first curable resin (xl) before the back surface lib of the semiconductor chip with the wafer 10 is ground, warping of the semiconductor chip with the wafer 10 can be suppressed.

[0570] (Second Embodiment: Process (S-BG))

[0571] After the process (S3) is performed, the process (S-BG) is performed. As shown in (2-b) of FIG. 2, the back surface lib of the semiconductor chip with the wafer 10 is ground in a state where the first composite sheet (al) is attached. Figure 12

[0572] Note that the amount of grinding when the back surface lib of the semiconductor chip with the wafer 10 is ground is only an amount that at least exposes the bottom of the groove portion 13 of the semiconductor chip with the wafer 10, but the grinding can be further performed to grind the first cured resin film (rl) filled in the groove portion 13 at the same time as the semiconductor chip with the wafer 10 is ground.

[0573] Next, as shown in (2-c) of FIG. 2, the first support sheet (Yl) is peeled from the first composite sheet (al). Figure 12

[0574] (Second Embodiment: Process (S4))

[0575] After the process (S-BG) is performed, the process (S4) is performed as in the first embodiment. Specifically, as shown in (3) of FIG. 3, the semiconductor chip with the wafer 10 is singulated. Figure 12 ​​As shown in (2-d), the semiconductor chip with the first cured resin film (r1) is cut along the division line to separate the first cured resin film (r1) of the dicing groove portion from the wafer 10.

[0576] The cutting can be performed by a known method such as a blade cutting method or a laser cutting method.

[0577] Thus, the semiconductor chip 40 in which at least the bump-forming surface 11a and the side surface are covered with the first cured resin film (r1) can be obtained.

[0578] The semiconductor chip 40 has excellent strength because the bump-forming surface 11a and the side surface are covered with the first cured resin film (r1). In addition, the semiconductor chip 40 in which peeling of the first cured resin film (r1) as a protective film is suppressed can be obtained for the reasons described above.

[0579] <Third Embodiment>

[0580] In the third embodiment, the process (S-BG) is performed after the process (S3) and before the process (S4) as shown in Figure 7 But it is different from the second embodiment in that the back grinding sheet (b-BG) is used additionally.

[0581] Figure 13 A diagram relating to the third embodiment is shown.

[0582] (Third Embodiment: Process (S3))

[0583] In the third embodiment, the process (S3) is performed first, but before this, the first support sheet (Y1) is peeled from the first composite sheet (al) as shown in (3-a). The process (S3) is performed on this basis. Specifically, the first curable resin (xl) is cured to obtain the semiconductor chip with the first cured resin film (r1) as the wafer 10 as shown in (3-b). Figure 13 Figure 13

[0584] The curing method can be the same as the curing method described in the first embodiment.

[0585] Because the first support sheet (Y1) is peeled before the process (S3) is performed, even if the first curable resin (xl) is a thermosetting resin and heating treatment for curing is to be performed in the process (S3), the first support sheet (Y1) does not require heat resistance. Thus, the degree of freedom in design of the first support sheet (Y1) is improved.

[0586] ​​In addition, by curing the first curable resin (x1) before grinding the back surface 11b of the semiconductor-chip-manufacturing wafer 10, warping of the semiconductor-chip-manufacturing wafer 10 can be suppressed.

[0587] (Third Embodiment: Step (S-BG))

[0588] After the step (S3) is implemented, the step (S-BG) is implemented. Specifically, as shown in (3-c) of FIG. 3, a back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the semiconductor-chip-manufacturing wafer 10 with the first cured resin film (r1). Figure 13 Figure 13 After the back surface 11b of the semiconductor-chip-manufacturing wafer 10 is ground in the state where the back grinding sheet (b-BG) is attached, as shown in (3-d) of FIG. 3, the back grinding sheet (b-BG) is peeled from the semiconductor-chip-manufacturing wafer 10 with the first cured resin film (r1), as shown in (3-e) of FIG. 3. Figure 13

[0589] Since the back grinding sheet (b-BG) is not used in the step (S3), even if the first curable resin (x1) is a thermosetting resin and heating treatment for curing is to be implemented in the step (S3), the back grinding sheet (b-BG) is not required to have heat resistance. Therefore, the back grinding sheet (b-BG) has improved design freedom.

[0590] Note that the amount of grinding when the back surface 11b of the semiconductor-chip-manufacturing wafer 10 is ground is only required to be an amount that at least exposes the bottom of the groove portion 13 of the semiconductor-chip-manufacturing wafer 10, but the first cured resin film (r1) filled in the groove portion 13 can also be ground at the same time as the semiconductor-chip-manufacturing wafer 10 is ground.

[0591] (Third Embodiment: Step (S4))

[0592] After the step (S-BG) is implemented, the step (S4) is implemented as in the first embodiment and the second embodiment. Specifically, as shown in (3-f) of FIG. 3, the portion of the first cured resin film (r1) of the semiconductor-chip-manufacturing wafer 10 with the first cured resin film (r1) formed in the groove portion is cut along the division predetermined line. Figure 13

[0593] The cutting can be appropriately implemented using a blade cutting method, a laser cutting method, or the like, which are publicly known.

[0594] Thus, at least the semiconductor chip 40 in which the bump-forming surface 11a and the side surface are covered with the first cured resin film (r1) can be obtained. ​​​

[0595] The semiconductor chip 40 has excellent strength because the bump formation surface 11a and the side surface are covered with the first cured resin film (r1). In addition, based on the aforementioned reasons, the semiconductor chip 40 for which peeling of the first cured resin film (r1) as a protective film is inhibited can be obtained.

[0596] <Fourth Embodiment>

[0597] In the fourth embodiment, the process (S-BG) can be performed in the process (S4) as shown in Figure 7

[0598] Figure 14 A diagram relating to the fourth embodiment is shown.

[0599] (Fourth Embodiment: Process (S3))

[0600] In the fourth embodiment, the process (S3) is performed first, but before this, the first support sheet (Y1) is peeled from the first composite sheet (al) as shown in (4-a) of Figure 14 On this basis, the process (S3) is implemented. Specifically, the first curable resin (x1) is cured to obtain the semiconductor chip production wafer 10 with the first cured resin film (r1) as shown in (4-b) of Figure 14

[0601] The curing method can be the same as the curing method described in the first embodiment.

[0602] Because the first support sheet (Y1) is peeled before the process (S3) is implemented, even if the first curable resin (x1) is a thermosetting resin and heating treatment to cure is to be implemented in the process (S3), heat resistance is not required for the first support sheet (Y1). Therefore, the degree of freedom in design of the first support sheet (Y1) is improved.

[0603] In addition, by curing the first curable resin (x1) before the back surface 11b of the semiconductor chip production wafer 10 is ground, warping of the semiconductor chip production wafer 10 can be inhibited.

[0604] (Fourth Embodiment: Process (S4) Including Process (S-BG))

[0605] After the process (S3) is implemented, the process (S-BG) is performed as shown in Figure 14 ​​As shown in (4-c), a portion of the first cured resin film (r1) of the semiconductor-chip-prepared wafer 10 formed in the groove portion 13 is cut along the division- scheduled line to form a cut. From the viewpoint of easily performing singulation, the depth of the cut is preferably set to the depth reaching the deepest portion of the groove portion 13. Thus, in the process (S-BG) to be described later, the semiconductor-chip-prepared wafer 10 with the first cured resin film (r1) can be singulated along the cut.

[0606] Alternatively, although not shown, a modified region can be formed in the first cured resin film (r1) of the semiconductor-chip-prepared wafer 10 formed in the groove portion 13 along the division- scheduled line. The modified region can be formed by laser or plasma treatment, or the like. Thus, in the process (S-BG) to be described later, a crack can be generated from the modified region as a starting point, and the semiconductor-chip-prepared wafer 10 with the first cured resin film (r1) can be singulated along the modified region.

[0607] Next, the process (S-BG) is performed. Specifically, as shown in (4-d), a back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the semiconductor-chip-prepared wafer 10 with the first cured resin film (r1). Figure 14 Next, the process (S-BG) is performed. Specifically, as shown in (4-d), a back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the semiconductor-chip-prepared wafer 10 with the first cured resin film (r1). Figure 14 Next, the process (S-BG) is performed. Specifically, as shown in (4-d), a back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the semiconductor-chip-prepared wafer 10 with the first cured resin film (r1). Figure 14 Next, the process (S-BG) is performed. Specifically, as shown in (4-d), a back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the semiconductor-chip-prepared wafer 10 with the first cured resin film (r1).

[0608] Thus, the semiconductor chip 40 having the bump-forming surface 11a and the side surface covered with the first cured resin film (r1) can be obtained.

[0609] Note that the amount of grinding when the back surface 11b of the semiconductor-chip-prepared wafer 10 is ground is only an amount in which at least the bottom of the groove portion 13 of the semiconductor-chip-prepared wafer 10 is exposed, but the grinding can be further performed to grind the first cured resin film (r1) filled in the groove portion 13 at the same time as the semiconductor-chip-prepared wafer 10 is ground.

[0610] The semiconductor chip 40 has excellent strength because the bump-forming surface 11a and the side surface are covered with the first cured resin film (r1).

[0611] Note that since the back grinding sheet (b-BG) is not used in the step (S3), even if the first curable resin (x1) is a thermosetting resin and heating treatment for curing is to be performed in the step (S3), heat resistance is not required for the back grinding sheet (b-BG). Thus, the degree of freedom in designing of the back grinding sheet (b-BG) is increased.

[0612] Here, in the first to fourth embodiments, the case where the first support sheet (Y1) or the back grinding sheet (b-BG) is used in the step (S-BG) is described, but in one embodiment of the present application, a resin layer (Z1) for back grinding can be formed instead of the first support sheet (Y1) or the back grinding sheet (b-BG).

[0613] Specifically, after the surface of the first cured resin film (r1) and the bumps exposed from the first cured resin film (r1) are covered with the resin (z1) having fluidity, the resin (z1) can be cured to form the resin layer (Z1) for back grinding, thereby performing the grinding step instead of using the back grinding sheet.

[0614] Note that when the surface of the first cured resin film (r1) and the bumps exposed from the first cured resin film (r1) are covered with the resin (z1), the resin layer (Z1) for back grinding, which is no longer needed, can be easily peeled off after the step (S-BG) by covering with a resin film (z2) having softness capable of following the unevenness of the bumps.

[0615] [Step (T)]

[0616] In one embodiment of the method for manufacturing a semiconductor chip of the present application, the following step (T) is preferably further included.

[0617] • Step (T): a step of forming a second cured resin film (r2) on the back surface of the wafer for manufacturing a semiconductor chip

[0618] According to the manufacturing method of the above-described embodiment, a semiconductor chip 40 in which at least the bump formation surface 11a and the side surface are covered with the first cured resin film (r1) can be obtained. However, the back surface of the semiconductor chip 40 is exposed. For this reason, from the viewpoint of further increasing the strength of the semiconductor chip 40 for protecting the back surface of the semiconductor chip 40, the above-described step (T) is preferably performed.

[0619] More specifically, the above-described step (T) preferably includes the following step (T1) to the following step (T2) in this order.

[0620] • Step (T1): a step of sticking a second curable resin (x2) to the back surface of the wafer for manufacturing a semiconductor chip

[0621] • Step (T2): a step of curing the second curable resin (x2) to form a second curable resin film (r2)

[0622] In addition, in the step (T1), it is preferable to use the second composite sheet (a2) having a laminated structure in which the second support sheet (Y2) and the layer (X2) of the second curable resin (x2) are laminated. In detail, it is preferable to make the step (T1) a step of adhering the second composite sheet (a2) having a laminated structure in which the second support sheet (Y2) and the layer (X2) of the second curable resin (x2) are laminated to the back surface of the wafer for manufacturing semiconductor chips with the layer (X2) as the adhering surface.

[0623] In this case, the timing at which the second support sheet (Y2) is peeled from the second composite sheet (a2) can be between the step (T1) and the step (T2), or after the step (T2).

[0624] Here, in the case where the second composite sheet (a2) is used in the step (T1), the second support sheet (Y2) possessed by the second composite sheet (a2) preferably supports the second curable resin (x2) while also functioning as a dicing sheet.

[0625] In the case of the manufacturing method of the first to third embodiments, in the step (S4), the second composite sheet (a2) is adhered to the back surface 1 lb of the wafer for manufacturing semiconductor chips 10 with the first cured resin film (r1), and thus, when singulation based on dicing is performed, the second support sheet (Y2) functions as a dicing sheet, and dicing can be easily performed.

[0626] Here, in the case where the step (S3) is performed after the step (S-BG) as in the manufacturing method of the first embodiment, the above-described step (T1) can be performed before the step (S3) is performed, and then the step (S3) and the step (T2) can be performed simultaneously. That is, the first curable resin (x1) and the second curable resin (x2) can be simultaneously cured at once. Thus, the number of curing processes can be reduced.

[0627] In detail, in the manufacturing method of the first to third embodiments, the step (T) sequentially includes the following step (T1-1) and the following step (T1-2),

[0628] • Step (T1-1): a step of adhering the second curable resin (x2) to the back surface of the wafer for manufacturing semiconductor chips after the step (S-BG) and before the step (S4)

[0629] • Step (T2-2): a step of curing the second curable resin (x2) to form a second cured resin film (r2)

[0630] In the step (S4), when the portion of the first cured resin film (r1) formed in the groove portion is cut off along the division predetermined line to make the semiconductor chip with the first cured resin film (r1) into a wafer, it is preferable that the second curable resin (x2) or the second cured resin film (r2) is also cut off at one time.

[0631] In addition, in the manufacturing method of the fourth embodiment, the step (T) successively includes the following step (T2-1) and the following step (T2-2),

[0632] • Step (T2-1): a step of adhering the second curable resin (x2) to the back surface of the semiconductor chip wafer while maintaining the state where the back grinding sheet (b-BG) is adhered, after the step (S-BG) and after the step (S4)

[0633] • Step (T2-2): a step of curing the second curable resin (x2) to form a second cured resin film (r2)

[0634] It is preferable that the step (T) further includes the following step (T2-3) before or after the step (T2-2).

[0635] • Step (T2-3): a step of dividing the second curable resin layer (x2) or the second cured resin film (r2) along a curved line

[0636] [Other Steps]

[0637] In one mode of the manufacturing method of the semiconductor chip of the present application, other steps can also be included within the range not departing from the gist of the present application.

[0638] As such a treatment, for example, a wet etching treatment, a dry etching treatment, or the like performed on the bump formation surface after the protective film (the first cured resin film (r1)) is formed can be cited.

[0639] Examples

[0640] The present application will be described more specifically in connection with the following examples, but the present application is not limited to the following examples.

[0641] 1. Raw material for manufacturing the first thermosetting resin film forming composition (x1-1-1)

[0642] The raw material for manufacturing the first thermosetting resin film forming composition (x1-1-1) is as shown below.

[0643] (1) Polymer component (A)

[0644] (A)-1: Polyvinyl butyral having structural units represented by the following formulae (i)-1, (i)-2 and (i)-3 (S-LEC BL-10" manufactured by Sekisui Chemical Co., Ltd., weight average molecular weight 25,000, glass transition temperature 59°C).

[0645] (A)-2: Acrylic resin obtained by copolymerizing butyl acrylate (55 parts by mass), methyl acrylate (10 parts by mass), glycidyl methacrylate (20 parts by mass) and 2-hydroxyethyl acrylate (15 parts by mass) (weight average molecular weight 800,000, glass transition temperature -28°C).

[0646] [Chemical Formula 2]

[0647]

[0648] (In the formula, 11 is about 28, m1 is 1 to 3, and n1 is an integer of 68 to 74.)

[0649] (2) Epoxy resin (B1)

[0650] (B1)-1: Liquid modified bisphenol A type epoxy resin ("EPICLON EXA-4850-150" manufactured by DIC Corporation, molecular weight 900, epoxy equivalent 450 g / eq)

[0651] (B1)-2: Liquid bisphenol F type epoxy resin ("YL983U" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 165 to 175 g / eq)

[0652] (B1)-3: Polyfunctional aromatic type epoxy resin ("EPPN-502H" manufactured by nippon Kayaku Co., Ltd., epoxy equivalent 158 to 178 g / eq)

[0653] (B1)-4: Dicyclopentadiene type epoxy resin ("EPICLON HP-7200HH" manufactured by DIC Corporation, epoxy equivalent 254 to 264 g / eq)

[0654] (3) Thermal curing agent (B2)

[0655] (B2)-1: Novolak type phenol resin ("BRG-556" manufactured by Showa Denko K.K.)

[0656] (B2)-2: o-Cresol type novolak resin ("PHENOLITE KA-1160" manufactured by DIC Corporation)

[0657] (4) Curing accelerator (C)

[0658] (C)-1: 2-phenyl-4,5-dihydroxymethylimidazole ("Curezol 2PHZ-PW" manufactured by Shikoku Chemicals Corporation)

[0659] (5) Filler (D)

[0660] (D)-1: Spherical silica modified with an epoxy group ("Adamano YA050C-MKK" manufactured by Admatechs Co., Ltd., average particle diameter 50 nm)

[0661] (6) Additive (I)

[0662] (I)-1: Surfactant (acrylic polymer, "BYK-361N" manufactured by BYK

[0663] (I)-2: Silicone oil (aralkyl-modified silicone oil, "XF42-334" manufactured by Momentive Performance Materials Japan KK)

[0664] (I)-3: Rheology modifier (polyhydroxycarboxylate, "BYK-R606" manufactured by BYK

[0665] 2. Examples 1 to 2, Comparative Examples 1 to 3

[0666] 2-1. Example 1

[0667] (1) Production of the first thermosetting resin film-forming composition (x1-1-1)

[0668] The polymer component (A)-1 (100 parts by mass), the epoxy resin (B1)-1 (350 parts by mass), the epoxy resin (B1)-4 (270 parts by mass), the thermosetting agent (B2)-1 (190 parts by mass), the curing accelerator (C)-1 (2 parts by mass), the filler (D)-1 (90 parts by mass), and the additive (I)-3 (9 parts by mass) were dissolved or dispersed in methyl ethyl ketone, and stirring was performed at 23°C, whereby a thermosetting resin film-forming composition (x1-1-1) having a total concentration of 45% by mass of the components other than the solvent was obtained. Note that the amounts of the components other than the solvent shown here are all amounts of the target substances excluding the solvent.

[0669] (2) Production of the first thermosetting resin film (x1-1)

[0670] A release film (Lindner Corporation, "SP-PET381031", thickness 38 μm) whose one side was subjected to a release treatment using silicone treatment to form a polyethylene terephthalate film was coated with the obtained composition (x1-1) on the release-treated side, and was heated and dried at 120°C for 2 minutes, thereby forming a first thermosetting resin film (x1-1) having a thickness of 45 μm.

[0671] 2-2. Examples 2, Comparative Examples 1 to 3

[0672] Either or both of the kind and the amount of the component to be added in the preparation of the first thermosetting resin film-forming composition (x1-1-1) were changed so that the kind and the amount of the component contained in the first thermosetting resin film-forming composition (x1-1-1) would be as shown in Table 1 below, and otherwise, a first thermosetting resin film (x1-1) having a thickness of 45 μm was formed by the same method as in the case of Example 1.

[0673] Note that, in the column of the component contained in Table 1, "-" indicates that the first thermosetting resin film-forming composition (x1-1-1) does not contain the component.

[0674] 3. Evaluation

[0675] 3-1. Production of the first composite sheet (α1)

[0676] A back-grinding tape (Lindner Corporation, "E-8510HR") was used as the first support sheet (Y1), and the back-grinding tape was adhered to the first thermosetting resin film (x1-1) on the release film obtained in Examples 1 to 2 and Comparative Examples 1 to 3 above, respectively. Thus, a first composite sheet (α1) in which the first support sheet (Y1) and the first thermosetting resin film (x1-1) were laminated was obtained.

[0677] 3-2. Measurement of Gc1 and Gc300 of the first thermosetting resin film (x1-1) and calculation of X value

[0678] Twenty pieces of the first thermosetting resin film (x1-1) having a thickness of 50 μm were produced by the same method as above, except that the amount of the composition (x1-1-1) to be coated was changed. Then, these first thermosetting resin films (x1-1) were laminated, and the obtained laminated film was cut into a circular plate having a diameter of 25 mm, thereby producing a test piece of the first thermosetting resin film (x1-1) having a thickness of 1 mm.

[0679] The setting portion of a test piece in a viscoelasticity measuring device (MCR301 manufactured by Anton Paar) was previously kept at 90°C, and the test piece of the first thermosetting resin film (x1-1) obtained above was placed in the setting portion, and a measuring jig was pressed against the upper surface of the test piece, whereby the test piece was fixed to the setting portion.

[0680] Next, the strain generated by the test piece was increased in stages in the range of 0.01% to 1000% under the conditions of a temperature of 90°C and a measuring frequency of 1 Hz, and the storage modulus Gc of the test piece was measured. Then, the X value was calculated from the measured values of Gc1 and Gc300. The results are shown in Table 1.

[0681] 3-3. Measurement of the overflow amount of the first thermosetting resin film (x1-1)

[0682] A release film (SP-PET381031 manufactured by Lindal Corporation, thickness 38 μm) in which one side of a polyethylene terephthalate film was subjected to a release treatment by silicone treatment was used, and the composition (x1-1-1) obtained above was applied to the release-treated side thereof, and was heated and dried at 120°C for 2 minutes, whereby a first thermosetting resin film (x1-1) having a thickness of 30 μm was formed.

[0683] Next, the first thermosetting resin film (x1-1) was processed together with the release film into a circular shape having a diameter of 170 mm, whereby a test piece with a release film was produced.

[0684] The exposed surface of the test piece obtained (in other words, the surface on the side opposite to the side provided with the release film) was entirely adhered to the surface of a transparent back adhesive tape (E-8180 manufactured by Lindal Corporation) in a tape shape, whereby a laminate as shown in FIG. 1 was obtained. Figure 15 is a plan view schematically showing the state of the laminate obtained as viewed from the upper direction of the back adhesive tape side thereof. Figure 15 is a plan view schematically showing the state of the laminate obtained as viewed from the upper direction of the back adhesive tape side thereof.

[0685] As shown in the figure, the laminate 101 obtained was composed of the back adhesive tape 7, the test piece (first thermosetting resin film (x1-1)), and the release film, which were laminated in the thickness direction thereof in this order.

[0686] Next, the peel film was removed from the resulting laminate, and the exposed surface of the test piece (in other words, the surface of the test piece opposite the side provided with the back-grinding tape) was pressed against the one surface of a silicon wafer having a diameter of 12 inches, thereby adhering the test piece to the surface of the silicon wafer. At this time, the test piece was adhered using an adhering device (roll laminator, "RAD-3510F / 12" manufactured by Linde Co., Ltd.), under conditions of a stage temperature of 90°C, an adhering speed of 2 mm / sec, an adhering pressure of 0.5 MPa, and a roll adhering height of -200 μm, while heating the first thermosetting resin film (xl-1).

[0687] Next, the maximum value of the length of the line segment connecting different two points on the outer periphery of the test piece adhered to the silicon wafer was measured, and the measured value (the maximum value of the length of the line segment) was used to calculate the overflow amount (mm) of the test piece (in other words, the first thermosetting resin film (xl-1)) by combining the following formula (1) and the following formula (2). Figure 2 The method described above was used to calculate the overflow amount (mm) of the test piece (in other words, the first thermosetting resin film (xl-1)). The results are shown in Table 1.

[0688] Note that in the case where the overflow amount was 170 mm, it was determined that there was no change in shape relative to the original test piece, and no overflow had occurred. On the other hand, in the case where the overflow amount exceeded 170 mm, it was determined that there was a change in shape relative to the original test piece, and an overflow had occurred.

[0689] 3-4. Confirmation of the presence or absence of the residual first thermosetting resin film (xl-1) on the upper portion of the bump

[0690] The peel film was removed from the first composite sheet (al) obtained in "3-1. Production of the first composite sheet (al)", and the surface (exposed surface) of the first thermosetting resin film (xl-1) thus exposed was pressed against the bump formation surface of a semiconductor wafer having a diameter of 8 inches and provided with a bump, thereby adhering the first composite sheet (al) from which the peel film had been removed to the bump formation surface of the semiconductor wafer. At this time, as the semiconductor wafer, a semiconductor wafer having a bump height of 210 μm, a bump width of 250 μm, and a distance between bumps of 400 μm was used. In addition, the first composite sheet (al) was adhered using an adhering device (roll laminator, "RAD-3510F / 12" manufactured by Linde Co., Ltd.), under conditions of a stage temperature of 90°C, an adhering speed of 2 mm / sec, an adhering pressure of 0.5 MPa, and a roll adhering height of -200 μm, while heating the first composite sheet (al).

[0691] Next, the first support sheet (Y1) was removed from the first thermosetting resin film (x1-1) using a multi-chip mounter (Lindberg Corporation, "RAD-2700F / 12") to expose the first thermosetting resin film (x1-1).

[0692] Next, the surface of the bump of the semiconductor wafer was observed from a direction at an angle of 60° to a direction perpendicular to the bump formation surface of the semiconductor wafer using a scanning electron microscope (SEM, KEYENCE Corporation, "VE-9700") to confirm the presence or absence of residue of the first thermosetting resin film (x1-1) on the upper portion of the bump. In the case where residue was present on the upper portion of the bump, it was determined to be "residue present", and in the case where residue was not present on the upper portion of the bump, it was determined to be "residue not present". The results are shown in Table 1.

[0693] 3-5. Confirmation of the presence or absence of shrinkage holes of the first thermosetting resin film (x1-1) on the bump formation surface

[0694] The presence or absence of shrinkage holes caused by the cured product of the first thermosetting resin film (x1-1) on the surface of the semiconductor chip on the bump formation surface was investigated using a 12-inch semiconductor wafer on which no bump was formed.

[0695] Specifically, a 12-inch silicon wafer on which no bump was formed was used, the first composite sheet (α1) was attached using the same method as in the case of "3-4. Confirmation of the presence or absence of residue of the first thermosetting resin film (x1-1) on the upper portion of the bump" described above, and the first support sheet (Y1) was removed from the first thermosetting resin film (x1-1).

[0696] Next, the first thermosetting resin film attached to the semiconductor wafer was subjected to heat treatment under heating conditions of temperature: 130°C, time: 2h, and furnace internal pressure: 0.5 MPa using a pressure oven (Lindberg Corporation, "RAD-9100") to cause the first thermosetting resin film (x1-1) to thermally cure.

[0697] Next, the cured product of the first thermosetting resin film (x1-1) (first cured resin film (r1)) and the semiconductor wafer as a whole were observed from the cured product side using an optical microscope (KEYENCE Corporation, "VHX-1000"). In the case where an exposed area of the semiconductor wafer could be directly confirmed, it was determined to be "shrinkage hole present", and in the case where an exposed area of the semiconductor wafer could not be directly confirmed, it was determined to be "shrinkage hole not present".

[0698] 3-5. Evaluation of the filling property into the groove portion

[0699] (1) Preparation of a wafer for manufacturing a semiconductor chip

[0700] As a wafer for manufacturing semiconductor chips, a 12-inch silicon wafer (wafer thickness: 750 μm) which was half-cut along a division line was used. The width of the half-cut portion (width of the groove portion) of the silicon wafer was 60 μm, and the depth of the groove was 230 μm.

[0701] (2) Evaluation method

[0702] The first support sheet (Yl) was peeled from the first thermosetting resin film (xl-1), and the semiconductor chip manufacturing wafer to which the first thermosetting resin film (xl-1) was attached was heated at 130°C for 4 hours to cure the same, thereby forming a first cured resin film (rl). Then, the semiconductor chip manufacturing wafer was cut from the half-cut formation surface toward the back surface, and the filling property of the first cured resin film (rl) into the groove portion of the half-cut portion was observed using an optical microscope (VHX-1000, KEYENCE Corporation).

[0703] • Adhering device: full-automatic laminator (product name "RAD-3510", manufactured by Lindy Corporation)

[0704] • Roll pressure: 0.5 MPa

[0705] • Roll height: -400 μm

[0706] • Adhering speed: 5 mm / sec

[0707] • Adhering temperature: 90°C

[0708] Next, the first support sheet (Yl) was peeled from the first thermosetting resin film (xl-1), and the semiconductor chip manufacturing wafer to which the first thermosetting resin film (xl-1) was attached was heated at 130°C for 4 hours to cure the same, thereby forming a first cured resin film (rl). Then, the semiconductor chip manufacturing wafer was cut from the half-cut formation surface toward the back surface, and the filling property of the first cured resin film (rl) into the groove portion of the half-cut portion was observed using an optical microscope (VHX-1000, KEYENCE Corporation).

[0709] The evaluation criteria for the filling property are as follows.

[0710] S: No deformation in the shape of the first cured resin film (rl) was observed, and the filling property was the best.

[0711] A: Deformation in the shape of the first cured resin film (rl) was observed near the entrance of the groove portion, but the filling property was good.

[0712] B: The filling property was poor.

[0713] 4. Results

[0714] The components contained in the first thermosetting resin film-forming composition (xl-1-1) and the evaluation results are shown in Table 1.

[0715] In addition, the results of "3-5. Evaluation of the filling property into the groove" (photograph instead of the drawing) are as shown in Figure 16

[0716] [Table 1]

[0717]

[0718] The following matters were known from the results shown in Table 1.

[0719] It was known that in Embodiments 1 and 2 in which the X value was 19 or more and less than 10,000, no overflow was observed, no residue on the bump upper portion was observed, no shrinkage hole at the time of bonding was observed, and the groove filling property was also good.

[0720] On the other hand, it was known that when the X value was less than 19 as in Comparative Examples 1 and 3, any one or more of the following occurred: overflow occurred, residue was generated on the bump upper portion, and the filling property was poor.

[0721] In addition, it was known from the photograph instead of the drawing of Figure 16 that when overflow occurred as in Comparative Example 1, the groove filling property became poor. In addition, in Comparative Example 3, the first thermosetting resin film (xl-1) did not enter the groove.

[0722] Furthermore, it was known that when the X value was 10,000 or more as in Comparative Example 2, a shrinkage hole occurred in the bump formation surface.

[0723] From the above results, it was known that by using the semiconductor chip with the first cured resin film (rl) formed using the first thermosetting resin film (xl-1) of Embodiments 1 and 2 as a wafer for singulation in the above process (S4) and the above process (S-BG), a semiconductor chip in which the bump formation surface and the side surface were well covered with the first cured resin film (rl) could be obtained.​

Claims

1. A curable resin film for forming a cured resin film as a protective film on both of a bump forming surface and a side surface of a semiconductor chip having the bump forming surface provided with a bump, the curable resin film satisfying the following condition (I), <Condition (I)> a test piece of the curable resin film having a diameter of 25 mm and a thickness of 1 mm is strained and the storage modulus of the test piece is measured under a condition of a temperature of 90°C and a frequency of 1 Hz, when the storage modulus of the test piece at a strain of 1% of the test piece is set as Gcl, and the storage modulus of the test piece at a strain of 300% of the test piece is set as Gc300, an X value calculated by the following formula (i) is 19 or more and less than 10,000, X = Gcl / Gc300 (i), the curable resin film contains a polymer component (A), a thermosetting component (B), a filler material (D), and an additive (I), wherein the polymer component (A) is at least one selected from the group consisting of polyvinyl acetal, acrylic resin, urethane resin, phenoxy resin, silicone resin, and saturated polyester resin, the thermosetting component (B) is at least one selected from the group consisting of an epoxy-based thermosetting resin containing an epoxy resin and a thermosetting agent, polyimide resin, and unsaturated polyester resin, the filler material (D) is an inorganic filler material, the additive (I) is at least one selected from the group consisting of a rheology modifier, a surfactant, and silicone oil, the content of the additive (I) is 0.5 to 10% by mass with respect to the total mass of the curable resin film.

2. The curable resin film according to claim 1, wherein in the condition (I), Gc300 is less than 15,000.

3. The curable resin film according to claim 1, wherein the X value is 19 or more and 500 or less.

4. A composite sheet for forming a cured resin film as a protective film on both of a bump forming surface and a side surface of a semiconductor chip having the bump forming surface provided with a bump, the composite sheet has a laminated structure in which a support sheet and a layer of a curable resin are laminated, the curable resin is the curable resin film according to any one of claims 1 to 3.

5. Use of the curable resin film according to any one of claims 1 to 3, wherein the curable resin film according to any one of claims 1 to 3 is used for forming a cured resin film as a protective film on both of a bump forming surface and a side surface of a semiconductor chip having the bump forming surface provided with a bump.

6. Use of the composite sheet according to claim 4, wherein the composite sheet according to claim 4 is used for forming a cured resin film as a protective film on both of a bump forming surface and a side surface of a semiconductor chip having the bump forming surface provided with a bump.

7. A manufacturing method of a semiconductor chip, the method sequentially including the following steps (S1) to (S4), (S1) a step of preparing a semiconductor wafer, ​ ​ • Step (S1): a step of preparing a wafer for manufacturing a semiconductor chip by forming a groove portion as a division predetermined line on a bump formation surface of a semiconductor wafer having the bump formation surface provided with a bump in a manner not reaching a back surface; • Step (S2): a step of pressing and adhering a first curable resin (x1) to the bump formation surface of the wafer for manufacturing a semiconductor chip, while filling the first curable resin (x1) into the groove portion formed on the wafer for manufacturing a semiconductor chip, by covering the bump formation surface of the wafer for manufacturing a semiconductor chip with the first curable resin (x1); • Step (S3): a step of curing the first curable resin (x1) to obtain a wafer for manufacturing a semiconductor chip with a first cured resin film (r1); • Step (S4): a step of singulating the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) along the division predetermined line to obtain a semiconductor chip whose at least the bump formation surface and a side surface are covered with the first cured resin film (r1), after the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or in the step (S4), further includes a step (S-BG), • Step (S-BG): a step of grinding the back surface of the wafer for manufacturing a semiconductor chip, as the first curable resin (x1), the curable resin film described in any one of claims 1 to 3 is used.

8. The method of manufacturing a semiconductor chip according to claim 7, wherein the step (S2) is performed by pressing and adhering a first composite sheet (al) having a laminated structure in which a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) are laminated to each other with the layer (X1) as an adhering surface to the bump formation surface of the wafer for manufacturing a semiconductor chip.

9. The method of manufacturing a semiconductor chip according to claim 8, wherein the step (S-BG) is performed by peeling the first support sheet (Y1) from the first composite sheet (al) after the back surface of the wafer for manufacturing a semiconductor chip is ground in a state where the first composite sheet (al) is adhered, the step (S4) is performed by cutting a portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove portion along the division predetermined line.

10. The method of manufacturing a semiconductor chip according to claim 8, wherein the step (S-BG) is performed after the step (S3) and before the step (S4), the step (S3) is performed without peeling the first support sheet (Y1) from the first composite sheet (al), ​ The process (S-BG) is implemented by peeling the first support sheet (Y1) from the first composite sheet (α1) after the back surface of the semiconductor chip manufacturing wafer has been ground in a state where the first composite sheet (α1) is attached, The process (S4) is implemented by cutting the portion of the first cured resin film (r1) of the semiconductor chip manufacturing wafer with the first cured resin film (r1) formed in the groove portion along the division predetermined line.

11. The semiconductor chip manufacturing method according to claim 8, wherein The process (S-BG) is implemented by peeling the first support sheet (Y1) from the first composite sheet (α1) after the back surface of the semiconductor chip manufacturing wafer has been ground in a state where the first composite sheet (α1) is attached, The first support sheet (Y1) is peeled from the first composite sheet (α1) after the process (S2) and before the process (S3), The process (S-BG) is implemented by peeling the first support sheet (Y1) from the first composite sheet (α1) after the back surface of the semiconductor chip manufacturing wafer has been ground in a state where the first composite sheet (α1) is attached, The process (S4) is implemented by cutting the portion of the first cured resin film (r1) of the semiconductor chip manufacturing wafer with the first cured resin film (r1) formed in the groove portion along the division predetermined line.

12. The semiconductor chip manufacturing method according to claim 8, wherein The process (S-BG) is implemented in the process (S4), The first support sheet (Y1) is peeled from the first composite sheet (α1) after the process (S2) and before the process (S3), The process (S4) is implemented by cutting the portion of the first cured resin film (r1) of the semiconductor chip manufacturing wafer with the first cured resin film (r1) formed in the groove portion along the division predetermined line.

13. The semiconductor chip manufacturing method according to any one of claims 7 to 12, further comprising a process (T), • Process (T): a process of forming a second cured resin film (r2) on the back surface of the semiconductor chip manufacturing wafer.

14. The method of manufacturing a semiconductor chip according to any one of claims 7 to 12, wherein The width of the groove portion is 10 μm to 2000 μm.

15. The method of manufacturing a semiconductor chip according to any one of claims 7 to 12, wherein The depth of the groove portion is 30 μm to 700 μm.

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