Reaction chamber and semiconductor process apparatus

Abstract

This invention discloses a reaction chamber and semiconductor process equipment. The reaction chamber includes a chamber body, an electrostatic chuck, position detection components, and a correction mechanism. The electrostatic chuck is located within the chamber body and is used to hold a wafer. An air inlet is provided on the electrostatic chuck for blowing air onto the wafer. Multiple position detection components are spaced apart circumferentially along the electrostatic chuck and are used to detect whether the wafer deviates from a preset position on the electrostatic chuck when air is blown onto the wafer through the air inlet. The correction mechanism includes multiple drive components spaced apart circumferentially along the electrostatic chuck. These drive components cooperate with each other when the position detection components detect that the wafer has deviated from the preset position to adjust the wafer to the preset position. This solution addresses the problem of poor safety and reliability in reaction chambers.

Description

Technical Field

[0001] This invention relates to the field of semiconductor chip technology, and in particular to a reaction chamber and semiconductor process equipment. Background Technology

[0002] With the rapid development of technology, smartphones, tablets, and other electronic products have become indispensable in modern life. These electronic products contain many semiconductor chips, and the main material for manufacturing semiconductor chips is wafers. During the wafer processing, circuit patterns need to be etched, and this process is usually completed using semiconductor (etching or deposition) process equipment.

[0003] In related technologies, semiconductor process equipment includes a reaction chamber, in which an electrostatic chuck is installed. The electrostatic chuck is used to support the wafer and can also electrostatically attract the wafer, thereby fixing the wafer's support position and preventing the wafer from shifting during the process.

[0004] To determine whether the wafer has successfully adsorbed or desorbed, the relevant technology involves providing a vent hole on the bearing surface of the electrostatic chuck. When the wafer is placed on the electrostatic chuck, the vent hole is connected to the gap between the electrostatic chuck and the wafer, and helium gas is introduced through the vent hole. The flow rate of the introduced helium gas is used to determine whether the wafer has successfully adsorbed or desorbed.

[0005] However, during the process of determining desorption or adsorption, improper helium flow rate settings can easily cause the wafer to tilt. Inaccurate wafer positioning during transport can also lead to wafer damage, thus compromising the safety and reliability of the reaction chamber. Summary of the Invention

[0006] This invention discloses a reaction chamber and semiconductor process equipment to solve the problem of poor safety and reliability of reaction chambers.

[0007] To solve the above problems, the present invention adopts the following technical solution:

[0008] A reaction chamber, comprising:

[0009] chamber body;

[0010] An electrostatic chuck is located within the chamber body and is used to carry a wafer; the electrostatic chuck is provided with an air inlet for blowing air onto the wafer;

[0011] Multiple position detection elements are distributed at intervals along the circumference of the electrostatic chuck to detect whether the wafer deviates from a preset position on the electrostatic chuck when the air inlet blows air onto the wafer.

[0012] The correction mechanism includes a plurality of drive components spaced circumferentially along the electrostatic chuck. The plurality of drive components cooperate with each other to adjust the wafer to the preset position when the position detection device detects that the wafer has deviated from the preset position.

[0013] A semiconductor process apparatus, comprising the reaction chamber described above.

[0014] The technical solution adopted in this invention can achieve the following beneficial effects:

[0015] In the reaction chamber disclosed in this invention, multiple position detection devices can detect the position of the wafer on the electrostatic chuck. When the position detection devices detect a positional deviation of the wafer, the correction mechanism can adjust the position of the wafer relative to the electrostatic chuck to correct the wafer's position on the electrostatic chuck. In this solution, the position detection devices can promptly detect wafer positional deviations, and the correction mechanism can correct the wafer's position on the electrostatic chuck. Therefore, the wafer's transport position is more accurate, reducing the risk of wafer damage and improving the safety and reliability of the reaction chamber. Attached Figure Description

[0016] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0017] Figure 1 This is a schematic diagram of the structure of the reaction chamber disclosed in an embodiment of the present invention;

[0018] Figure 2 This is a top view of the reaction chamber disclosed in an embodiment of the present invention;

[0019] Figure 3 This is a cross-sectional view of some components of the reaction chamber disclosed in an embodiment of the present invention;

[0020] Figure 4 for Figure 2 A magnified view of a portion of the image;

[0021] Figure 5 This is a cross-sectional view of some components of the reaction chamber disclosed in an embodiment of the present invention.

[0022] Explanation of reference numerals in the attached figures:

[0023] 100-Cavity body, 200-Electrostatic chuck, 210-Air inlet, 300-Position detection element, 401-First drive mechanism, 402-Second drive mechanism, 403-Third drive mechanism, 404-Fourth drive mechanism, 411-Drive source, 412-Connecting rod, 413-Push block, 500-Focusing ring, 510-Receiving groove, 600-Wafer, 700-Chuck electrode, 800-Helium gas pipeline. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0025] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0026] like Figures 1 to 5 As shown, this embodiment of the invention discloses a reaction chamber used in semiconductor process equipment. The disclosed reaction chamber includes a chamber body 100, an electrostatic chuck 200, and a position detection element 300.

[0027] The chamber body 100 is the basic component of the reaction chamber, and it provides a mounting base for other components of the reaction chamber. Specifically, the chamber body 100 has a reaction chamber in which the wafer 600 is processed.

[0028] An electrostatic chuck 200 is located within the chamber body 100, specifically within the reaction chamber. The electrostatic chuck 200 is used to support the wafer 600 and to fix it during processing. Specifically, the electrostatic chuck 200 is connected to a chuck electrode 700, which provides an adsorption voltage to the chuck 200, enabling it to adsorb the wafer 600 and ultimately fix it in place. In the above embodiment, the electrostatic chuck 200 has an air inlet 210 for blowing air onto the wafer 600. Specifically, the air inlet 210 is connected to a helium gas pipeline 800. During the processing of the wafer 600, the helium gas introduced through the helium gas pipeline 800 cools the wafer 600. Additionally, the introduction of helium gas into the helium line 800 can also determine whether the wafer 600 has been successfully adsorbed onto the electrostatic chuck 200, or whether the wafer 600 has successfully desorbed from the electrostatic chuck 200. The method for determining whether the wafer 600 has been adsorbed or desorbed from the electrostatic chuck 200 is explained in detail below and will not be repeated here.

[0029] Multiple position detection elements 300 are distributed circumferentially along the electrostatic chuck 200 to detect whether the wafer 600 deviates from a preset position on the electrostatic chuck 200 when air is blown onto the wafer 600 through the air inlet 210. Here, whether the wafer deviates from the preset position on the electrostatic chuck refers to the preset radial position of the wafer on the electrostatic chuck.

[0030] The correction mechanism includes multiple drive components spaced circumferentially along the electrostatic chuck 200. These drive components cooperate with each other to adjust the wafer 600 to the preset position when the position detection element 300 detects that the wafer 600 has deviated from the preset position. The preset position mentioned above refers to the radial preset position; therefore, the correction mechanism is used to adjust the radial position of the wafer 600 relative to the electrostatic chuck 200.

[0031] When the position detection unit 300 detects a positional deviation of the wafer 600, the correction mechanism can adjust the radial position of the wafer 600 relative to the electrostatic chuck 200 to correct the radial position of the wafer 600 on the electrostatic chuck 200. In other words, when the position detection unit 300 issues an alarm, the correction mechanism can center the position of the wafer 600 on the electrostatic chuck 200.

[0032] Optionally, when the radial position of wafer 600 on electrostatic chuck 200 is not offset, the central axis of wafer 600 may coincide with the central axis of electrostatic chuck 200, or the center of wafer 600 may be within the allowable deviation range from the center of electrostatic chuck 200. Therefore, wafer 600 is in a preset position, that is, wafer 600 is centered on the electrostatic chuck. When the radial position of wafer 600 on electrostatic chuck 200 is offset, the central axis of wafer 600 may not coincide with the central axis of electrostatic chuck 200, or the center of wafer 600 may exceed the allowable deviation range from the center of electrostatic chuck 200. Therefore, wafer 600 is not in the preset position.

[0033] In the specific operation process, when the wafer 600 is offset, the position detection unit 300 is triggered and sends an alarm signal. After receiving the alarm signal, the correction mechanism adjusts the radial position of the wafer 600 relative to the electrostatic chuck 200 to correct the radial position of the wafer 600 on the electrostatic chuck 200.

[0034] Optionally, the position detection element 300 can be a pressure sensor. When the wafer 600 shifts, the wafer 600 comes into contact with the position detection element 300, thereby generating pressure on the position detection element 300, and the position detection element 300 can output an offset signal. Alternatively, the position detection element 300 can be a photoelectric sensor. When the wafer 600 shifts, the wafer 600 blocks the light signal of the photoelectric sensor, thereby causing the photoelectric sensor to generate a photoelectric signal, and the position detection element 300 can output an offset signal. The position sensor can also be a distance sensor. When the wafer 600 shifts, the relative distance between the wafer 600 and the distance sensor changes, thereby causing the distance sensor to generate an alarm signal, and the position detection element 300 can output an offset signal. Of course, the position detection element 300 can also have other structures, which are not limited herein.

[0035] In the embodiments disclosed in this application, the position detection device 300 can detect the radial offset of the wafer 600 in a timely manner, and at the same time, the radial position of the wafer 600 on the electrostatic chuck 200 can be corrected by the correction mechanism. Therefore, the transmission position of the wafer 600 is accurate, and the wafer 600 is not easily damaged, thereby improving the safety and reliability of the reaction chamber.

[0036] In addition, multiple drive components are arranged in multiple positions on the electrostatic chuck 200, thus enabling multi-directional adjustment of the wafer 600 and improving the spin correction effect of the wafer 600.

[0037] Furthermore, when the position detection unit 300 detects a positional shift in the wafer 600, multiple drive components work together to correct the preset position of the wafer 600 on the electrostatic chuck 200. In other words, when the wafer 600 shifts position, multiple drive components move together to correct the preset position of the wafer 600. This approach improves the correction efficiency and accuracy of the wafer 600 compared to individual drive component movements.

[0038] Specifically, the drive assembly includes a drive source 411, a connecting rod 412, and a pusher block 413. The drive source 411 can be located outside the chamber body 100. A through hole can be formed in the side wall of the chamber body 100. One end of the connecting rod 412 can be connected to the drive source 411, and the other end of the connecting rod 412 can pass through the through hole and be connected to the pusher block 413. Multiple pushers 413 are distributed circumferentially around the electrostatic chuck 200. The drive source 411 can be used to drive the pushers 413 to move radially along the electrostatic chuck 200 via the connecting rod 412.

[0039] When the position detection unit 300 detects that the wafer 600 deviates from the preset position, multiple drive sources 411 can drive their corresponding push blocks 413 to move, so that multiple push blocks 413 move together toward the electrostatic chuck 200 to correct the preset position of the wafer 600 on the electrostatic chuck 200.

[0040] In this design, the number of components in the drive assembly is small, and the transmission method is simple. Furthermore, during the process within the reaction chamber, the process gas needs to be ionized. The ionized process gas can easily damage the internal structure of the drive source 411. Therefore, placing the drive source 411 outside the chamber body 100 can prevent damage to the drive source 411, thereby improving its service life.

[0041] Optionally, the drive source 411 can be a cylinder, a hydraulic cylinder, or a linear motor. Of course, the drive source 411 can also be other structures, which are not limited in this article.

[0042] The driving mechanism in this embodiment is not limited to an electric structure. The driving component can be a manual push rod, with one end inside the chamber body 100 and the other end outside the chamber body 100. When the position detection element 300 is triggered, the manual push rod can be pushed inward to move, thereby driving the wafer 600 to center.

[0043] In the above embodiments, a sealing ring may be provided between the drive source 411 or the connecting rod 412 and the reaction chamber to prevent leakage from the reaction chamber.

[0044] In the above embodiment, the wafer 600 is located within the space formed by multiple push blocks 413. When the position detection unit 300 detects that the wafer 600 deviates from the preset position, the drive source 411 on the side of the wafer that exceeds the preset position drives the corresponding connecting rod 412 to extend, or each drive source 411 drives the corresponding connecting rod 412 to extend. The connecting rod 412 drives its corresponding push block 413 to move toward the electrostatic chuck 200. During the correction process, multiple push blocks 413 can cooperate to push the wafer 600 toward the center of the electrostatic chuck 200, thereby achieving the centering of the wafer 600. After the wafer 600 is corrected to the preset position, the drive source 411 drives the corresponding connecting rod 412 to retract, and the connecting rod 412 drives its corresponding push block 413 to move away from the electrostatic chuck 200, causing the push block 413 to move away from the electrostatic chuck 200.

[0045] To further improve the spin correction accuracy of wafer 600, in another optional embodiment, multiple push blocks 413 can be located on the same circumference, and the circumference of the multiple push blocks 413 is concentric with the electrostatic chuck 200. In this scheme, the relative distance between each push block 413 and the electrostatic chuck 200 is the same, so the moving distance of each push block 413 is the same, and each push block 413 pushes the wafer 600 to move the same distance. Therefore, the adjustment distance of wafer 600 in each direction is the same, and over-adjustment of wafer 600 in one direction is less likely to occur, thereby further improving the spin correction accuracy of wafer 600.

[0046] In another optional embodiment, the plurality of driving components may respectively include a first driving component 401, a second driving component 402, a third driving component 403, and a fourth driving component 404. The first driving component 401 and the third driving component 403 may be distributed along a first radial direction of the electrostatic chuck 200, and the first driving component 401 and the third driving component 403 may drive the wafer 600 to move along the first radial direction. The second driving component 402 and the fourth driving component 404 may be distributed along a second radial direction of the electrostatic chuck 200, and the second driving component 402 and the fourth driving component 404 may drive the wafer 600 to move along the second radial direction. The first radial direction may be perpendicular to the second radial direction.

[0047] At this time, since the four driving components are distributed circumferentially around the electrostatic chuck 200, two driving components distributed in the same radial direction are located on opposite sides of the wafer 600. Therefore, the first driving component 401 and the third driving component 403 are located on opposite sides of the wafer 600 in the radial direction, and the second driving component 402 and the fourth driving component 404 can be located on opposite sides of the wafer 600 in the radial direction. The first driving component 401 can drive the wafer 600 to move in the positive direction of the first radial direction, and the third driving component 403 can drive the wafer 600 to move in the negative direction of the first radial direction. The second driving component 402 can drive the wafer 600 to move in the positive direction of the second radial direction, and the fourth driving component 404 can drive the wafer 600 to move in the negative direction of the second radial direction. The positive and negative directions are opposite. Here, the positive and negative directions refer to the direction of the corresponding driving component toward the central axis of the electrostatic chuck 200, specifically, the direction of the corresponding push block 413 of each driving component toward the central axis of the electrostatic chuck 200.

[0048] In this design, drive components are installed at four 90° positions distributed around the circumference of the electrostatic chuck 200, thereby further improving the correction accuracy of the wafer 600.

[0049] In addition, drive components are installed at four 90° positions distributed around the circumference of the electrostatic chuck 200, which can cover the entire circumferential range of the wafer 600 while keeping the number of drive components relatively small.

[0050] In the above embodiments, the reaction chamber may further include a focusing ring 500, which may surround the electrostatic chuck 200. The focusing ring 500 can improve the uniformity of the plasma on the surface of the wafer 600 and limit the position of the wafer 600. Since the focusing ring 500 is located on the outside of the electrostatic chuck 200, the connecting rod 412 of the drive mechanism needs to be higher than the top of the focusing ring 500. If the connecting rod 412 of the drive mechanism is too high in the reaction chamber, it may interfere with components such as the transfer robot.

[0051] Based on this, in another optional embodiment, the focusing ring 500 may have a radially extending through hole, through which the connecting rod 412 can pass and connect to the pushing block 413. The pushing block 413 may be located on one side of the inner wall of the focusing ring 500, specifically, between the focusing ring 500 and the electrostatic chuck 200. In this case, one end of the connecting rod 412 passing through the through hole can be connected to the pushing block 413.

[0052] In this design, the connecting rod 412 passes through the hole in the focusing ring 500. Therefore, the connecting rod 412 does not need to be positioned at the top of the focusing ring 500. As a result, the connecting rod 412 is installed at a lower position in the reaction chamber, making it less likely to interfere with components such as the transfer robot, thereby further improving the safety and reliability of the reaction chamber.

[0053] In the above embodiment, the push block 413 can be located between the focusing ring 500 and the electrostatic chuck 200. In this case, a large gap needs to be reserved between the focusing ring 500 and the electrostatic chuck 200 to meet the installation and movement requirements of the push block 413. However, if the gap between the focusing ring 500 and the electrostatic chuck 200 is too large, more plasma can easily enter the gap, resulting in excessive etching of the edge of the wafer 600, and the focusing ring cannot limit the position of the wafer 600.

[0054] Therefore, in another alternative embodiment, the inner sidewall of the focusing ring 500 may be provided with a receiving groove 510, where the inner sidewall refers to the sidewall facing the electrostatic chuck 200. A perforation may penetrate the sidewall of the receiving groove 510, and at least a portion of the push block 413 may be located within the receiving groove 510.

[0055] At this time, when the connecting rod 412 of the drive mechanism retracts, at least a portion of the push block 413 can be located within the receiving groove 510. When the connecting rod 412 of the drive mechanism extends, at least a portion of the push block 413 can extend into the receiving groove 510 to drive the wafer 600 to move.

[0056] In this design, the inner wall of the focusing ring 500 is provided with a receiving groove 510 to accommodate the push block 413. This results in a smaller gap between the focusing ring and the electrostatic chuck 200. With a smaller gap, less plasma enters the gap, making it less likely that the edge of the wafer 600 will be over-etched. This also helps to limit the wafer 600, thereby improving the yield of the wafer 600.

[0057] In the above embodiment, when the wafer 600 is skewed, the wafer 600 is likely to overlap with the focusing ring 500. At this time, when the top surface of the focusing ring 500 is higher than the top surface of the pushing block 413, the edge of the wafer 600 is likely to be higher than the top surface of the pushing block 413, making it difficult for the pushing block 413 to push the wafer 600 to move, thus making it difficult for the wafer 600 to be corrected.

[0058] Therefore, in another alternative embodiment, the top surface of the push block 413 can protrude beyond the top surface of the focusing ring 500. This solution can prevent the wafer 600 from deviating too much from the preset position, and the edge of the wafer 600 rests on the top surface of the push block 413, thus further improving the correction range of the correction mechanism.

[0059] In the above embodiments, when the top surface of the push block 413 protrudes significantly beyond the top surface of the focusing ring 500, it can easily affect the airflow field within the reaction chamber, thus impacting the process uniformity of the wafer 600. When the top surface of the push block 413 protrudes only slightly beyond the top surface of the focusing ring 500, the edge of the wafer 600 can easily protrude above the top surface of the push block 413, making it difficult to achieve wafer 600 correction.

[0060] Based on this, in another optional embodiment, the distance between the top surfaces of the push blocks 413 can be greater than or equal to 4 mm and less than or equal to 6 mm. This solution can ensure that the edge of the wafer 600 does not easily protrude from the top surface of the push blocks 413, and it is also less likely to affect the flow field of the process gas in the reaction chamber, thereby making the process uniformity of the wafer 600 better.

[0061] Optionally, the distance between the top surface of the push block 413 and the top surface of the gathering ring can be 5mm, or other sizes, which are not limited in this article.

[0062] In another optional embodiment, the number of position detection elements 300 can be three. The three position detection elements 300 can be disposed on the electrostatic chuck 200 and evenly spaced along the circumference of the electrostatic chuck 200.

[0063] In the specific working process, the position detection component 300 is a photoelectric sensor. When the gas blown out of the air inlet 210 deflects the wafer 600, the wafer blocks the light of at least one photoelectric sensor. The blocked photoelectric sensor emits an alarm signal, thereby outputting the offset signal of the wafer 600.

[0064] In this scheme, the photoelectric sensor has the advantages of high sensitivity and detection accuracy, thus further improving the safety and reliability of the reaction chamber.

[0065] Optionally, the number of position detection elements 300 can be three, and the angle between two adjacent position detection elements 300 can be 120°. In this case, the three position detection elements 300 are evenly distributed on the circumference of the electrostatic chuck 200.

[0066] In another alternative embodiment, at least one position detection element 300 is provided between two adjacent driving components. When at least one position detection element 300 detects a preset position offset of the wafer 600, multiple driving components jointly drive the wafer 600 to move so that the wafer 600 is aligned.

[0067] In the above embodiments, each position detection element 300 needs to be connected to multiple driving components. At this time, the position detection element 300 needs to lead out multiple lines, and the driving components also need to lead out multiple lines, so the circuit structure is relatively complex.

[0068] Based on this, in another alternative embodiment, the reaction chamber may further include a controller, which may be connected to multiple position detection elements 300 and to a correction mechanism. Specifically, the controller may be connected to multiple drive sources.

[0069] When the controller receives offset information measured by at least one position detector 300, it controls multiple drive components of the correction mechanism to cooperate with each other to adjust the wafer 600 to a preset position.

[0070] In this scheme, multiple position detection units 300 can be connected to the correction mechanism via a controller. The position detection units 300 transmit the detected offset information to the controller, which then controls the correction mechanism to correct the preset position of the wafer 600. In this case, there is no need for multiple position detection units 300 to be connected to the correction mechanism, thus simplifying the circuit structure of the correction mechanism and the position detection units 300.

[0071] Optionally, the controller can be a main controller for the reaction chamber or a separate controller for the correction mechanism and the position detection element 300.

[0072] The specific operation process of the reaction chamber disclosed in this application is as follows:

[0073] The first step is to insert wafer 600 into the reaction chamber and transfer wafer 600 onto the electrostatic chuck 200.

[0074] The second step involves applying an adsorption voltage to the electrostatic chuck 200 to adsorb the wafer 600.

[0075] The third step is to introduce helium gas to determine if wafer 600 has been successfully adsorbed. Set the helium pressure value. If the helium flow rate is less than or equal to the preset flow rate at the preset pressure, wafer 600 has been successfully adsorbed. If the helium flow rate is greater than the preset flow rate at the preset pressure, wafer 600 has not been successfully adsorbed.

[0076] The fourth step is to begin the wafer 600 processing technology once the wafer 600 has been successfully adsorbed.

[0077] The fifth step is to complete the processing of wafer 600 and desorb it.

[0078] Step 6: Determine if desorption of wafer 600 was successful. The method for determining this is the same as the method for determining desorption of wafer 600. Set a helium pressure value. If the helium flow rate is less than or equal to the preset flow rate at the preset pressure, it can be determined that desorption of wafer 600 was unsuccessful. If the helium flow rate is greater than the preset flow rate at the preset pressure, it can be determined that desorption of wafer 600 was successful.

[0079] Step 7: If wafer 600 is successfully desorbed, determine whether wafer 600 has shifted. When the position detection unit 300 issues an alarm, indicating a radial position shift of wafer 600, the correction mechanism will correct the radial position of wafer 600.

[0080] The eighth step is to transfer wafer 600 out of the reaction chamber, completing the wafer 600 processing technology.

[0081] Based on the reaction chamber of any of the above embodiments of the present invention, the embodiments of the present invention may further include a semiconductor process apparatus, wherein the disclosed semiconductor process apparatus has the reaction chamber of any of the above embodiments. This semiconductor process apparatus may be an etching machine or other wafer 600 processing equipment, and is not limited thereto.

[0082] The above embodiments of the present invention focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0083] The above description is merely an embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A reaction chamber, characterized in that, include: Chamber body(100); An electrostatic chuck (200) is located inside the chamber body (100) and is used to carry a wafer (600). An air inlet (210) is provided on the electrostatic chuck (200) for blowing air onto the wafer (600). Multiple position detection elements (300) are spaced apart and evenly distributed along the circumference of the electrostatic chuck (200) to detect whether the wafer (600) deviates from a preset position on the electrostatic chuck (200) when the air inlet (210) blows air onto the wafer (600). The correction mechanism includes multiple drive components spaced circumferentially along the electrostatic chuck (200). These drive components cooperate to adjust the wafer (600) to the preset position when the position detection element (300) detects that the wafer (600) has deviated from the preset position. Each drive component includes a drive source (411), a connecting rod (412), and a pusher block (413). The drive source (411) is located outside the chamber body (100). The side wall of the chamber body (100) is provided with a through hole. One end of the connecting rod (412) is connected to the driving source (411), and the other end of the connecting rod (412) passes through the through hole and is connected to the pushing block (413). A plurality of the pushing blocks (413) are distributed circumferentially along the electrostatic chuck (200). The driving source (411) is used to drive the pushing blocks (413) to move in the radial direction of the electrostatic chuck (200) through the connecting rod (412).

2. The reaction chamber according to claim 1, characterized in that, The plurality of push blocks (413) are located on the same circumference, and the circumference of the plurality of push blocks (413) is concentric with the electrostatic chuck (200).

3. The reaction chamber according to claim 1, characterized in that, The reaction chamber also includes a focusing ring (500) which surrounds the electrostatic chuck (200). The focusing ring (500) has a through hole extending radially therefrom. The connecting rod (412) passes through the through hole and is connected to the push block (413). The push block (413) is located on one side of the inner wall of the focusing ring (500).

4. The reaction chamber according to claim 3, characterized in that, The inner sidewall of the focusing ring (500) is provided with a receiving groove (510), the perforation penetrates the sidewall of the receiving groove (510), and at least a portion of the pushing block (413) can be located in the receiving groove (510).

5. The reaction chamber according to claim 3, characterized in that, The top surface of the push block (413) protrudes from the top surface of the focusing ring (500), and the distance between the top surface of the focusing ring (500) and the top surface of the push block (413) is greater than or equal to 4 mm and less than or equal to 6 mm.

6. The reaction chamber according to claim 1, characterized in that, The plurality of driving components include a first driving component (401), a second driving component (402), a third driving component (403), and a fourth driving component (404), wherein the first driving component (401) and the third driving component (403) are distributed along a first radial direction of the electrostatic chuck (200), and the first driving component (401) and the third driving component (403) drive the wafer (600) to move along the first radial direction; The second driving component (402) and the fourth driving component (404) are distributed along the second radial direction of the electrostatic chuck (200), and the second driving component (402) and the fourth driving component (404) drive the wafer (600) to move along the second radial direction; Wherein, the first radial direction is perpendicular to the second radial direction.

7. The reaction chamber according to claim 1, characterized in that, The number of position detection elements (300) is three. The three position detection elements (300) are disposed on the electrostatic chuck (200) and are evenly distributed at intervals along the circumference of the electrostatic chuck (200).

8. The reaction chamber according to claim 1, characterized in that, The reaction chamber also includes a controller, which is connected to a plurality of the position detection elements (300) and the correction mechanism. When the controller receives offset information measured by at least one of the position detection elements (300), it controls a plurality of the drive components of the correction mechanism to cooperate with each other to adjust the wafer (600) to the preset position.

9. A semiconductor process apparatus, characterized in that, The reaction chamber includes any one of claims 1 to 8.

Images