Metal plate for manufacturing organic light emitting diode deposition mask

Abstract

The invention relates to a metal sheet for manufacturing an organic light emitting diode deposition mask, the metal sheet comprising: a first surface and a second surface, the second surface being opposite to the first surface, wherein each of an average center line average surface roughness in a longitudinal direction and an average center line average surface roughness in a lateral direction of the first surface or the second surface of the metal sheet is 0.1 pm to 0.3 pm, wherein an average center line average surface roughness in a diagonal direction between the longitudinal direction and the lateral direction of the first surface or the second surface of the metal sheet is 0.1 pm to 0.3 pm, wherein the longitudinal direction is a rolling direction of the metal sheet, wherein the lateral direction is a direction perpendicular to the rolling direction of the metal sheet, and wherein the diagonal direction is a +45 degree direction or a -45 degree direction between the longitudinal direction and the lateral direction.

Description

[0001] This application is a divisional application of the invention patent application filed on August 24, 2018 (entered the Chinese national phase on March 6, 2020), with national application number 201880058019.8 (international application number PCT / KR2018 / 009806) and entitled "Metal Material Deposition Mask for OLED Pixel Deposition and Manufacturing Method Thereof". Technical Field

[0002] The embodiments relate to a metal material deposition mask for organic light-emitting diode (OLED) pixel deposition and a method for manufacturing the same. Specifically, the deposition mask according to the embodiments is used to produce OLED panels with a high resolution of 500 PPI or higher. Background Technology

[0003] Due to the need for display devices with high resolution and low power consumption, various display devices have been developed, such as liquid crystal displays and electroluminescent displays.

[0004] Electroluminescent displays have gained attention as the next generation of display devices due to their superior characteristics compared to liquid crystal displays, such as lower light emission, lower power consumption, and higher resolution.

[0005] Electric field display devices include organic light-emitting display devices and inorganic light-emitting display devices. That is to say, electric field display devices can be divided into organic light-emitting display devices and inorganic light-emitting display devices according to the material of the light-emitting layer.

[0006] Organic light-emitting display devices have attracted attention due to their wide viewing angle, fast response speed, and low power consumption.

[0007] The organic material constituting this light-emitting layer can be formed into a pattern that is used to form pixels on a substrate using a fine metal mask method.

[0008] In this case, a fine metal mask, i.e. a deposition mask, can have through-holes corresponding to the pattern to be formed on the substrate, and the pattern of red (R), green (G) and blue (B) pixels can be formed by depositing organic material after aligning the fine metal mask with the substrate.

[0009] Recently, various electronic devices, such as virtual reality (VR) devices, require ultra-high definition (UHD) display devices. Therefore, there is a need for fine metal masks with precisely sized through-holes capable of forming ultra-high resolution (UHD) patterns.

[0010] Multiple through-holes can be formed on a metal plate that can be used as a deposition mask through an etching process.

[0011] At this point, when the surface roughness in the longitudinal direction of the metal plate differs from that in the lateral direction, the adhesion force of the photoresist layer disposed on the surface of the metal plate can vary depending on the direction. That is, when the deviation between the surface roughness in the longitudinal and lateral directions of the metal plate is large, differences in the degree of etching may occur depending on the direction due to the difference in the adhesion force of the photoresist layer. Therefore, it is impossible to form vias of the desired size, resulting in a potential decrease in the uniformity of the via diameter. Furthermore, in the deposition mask, the difference in the adhesion force of the photoresist layer may lead to the disappearance and inhomogeneity of island-like portions. Therefore, inhomogeneities may occur between vias during the tensioning process before pixel deposition, making it difficult to deposit pixels at the target location using the deposition mask.

[0012] Therefore, there is a need for a deposition mask with a novel structure and a method for manufacturing it, which can uniformly form high-resolution or ultra-high-resolution (UHD) patterns with 500 PPI or higher without deposition defects. Summary of the Invention

[0013] Technical issues

[0014] The embodiments aim to provide a deposition mask and a method for manufacturing the same, which can uniformly form patterns with a high resolution of about 500 PPI or higher or an ultra-high resolution (UHD) of about 800 PPI or higher without deposition defects.

[0015] In addition, the implementation aims to provide a metal plate that minimizes warping caused by internal stress.

[0016] Furthermore, the embodiments aim to provide a method for efficiently measuring the residual stress of a metal plate used in the manufacture of a high-resolution deposition mask with 400 PPI or higher. Specifically, the embodiments aim to provide a measurement method capable of measuring residual stress regardless of the thickness of the metal plate.

[0017] In addition, the implementation aims to provide a deposition mask that can improve the uniformity of the location, shape, etc. of vias formed on a metal plate by minimizing internal stress.

[0018] Additionally, the implementation aims to provide a deposition mask that can minimize length deformation such as total pitch deformation or relaxation during stretching by ensuring rigidity.

[0019] Furthermore, the implementation aims to provide a deposition mask that can uniformly deposit OLED pixel patterns while ensuring rigidity, regardless of the location of vias.

[0020] The technical problems to be solved by the proposed embodiments are not limited to the above-described technical problems, and other technical problems not mentioned can be clearly understood by those skilled in the art to which the embodiments described below pertain.

[0021] Technical solution

[0022] In a metal material deposition mask for OLED pixel deposition according to an embodiment of the present invention, the deposition mask includes a deposition region for forming a deposition pattern and a non-deposition region other than the deposition region. The deposition region includes a plurality of effective portions spaced apart along a longitudinal direction and non-effective portions other than the effective portions. The effective portions include: a plurality of small surface holes formed on one surface; a plurality of large surface holes formed on another surface opposite to the first surface; through-holes connecting the small surface holes and the large surface holes; and island-like portions located between the multiple through-holes. The deposition mask has a resolution of 500 PPI or higher, and the diameter of the through-holes is 33 μm or less, and the distance between the centers of two adjacent through-holes is 48 μm. m or smaller, the tilt angle of the large surface hole relative to the other surface is 40 degrees to 55 degrees, the average centerline surface roughness in the longitudinal direction and the average centerline surface roughness in the lateral direction of the non-deposited area are 0.1 μm to 0.3 μm, the average 10-point average surface roughness Rz in the longitudinal direction and the average 10-point average surface roughness in the lateral direction of the non-deposited area are 0.5 μm to 2.0 μm, the value of the average centerline surface roughness in the longitudinal direction deviates from the average centerline surface roughness in the lateral direction by less than 50%, and the value of the average 10-point average surface roughness in the longitudinal direction deviates from the average 10-point average surface roughness in the lateral direction by less than 50%.

[0023] Furthermore, in a metal material deposition mask for OLED pixel deposition according to an embodiment of the present invention, the deposition mask includes a deposition region for forming a deposition pattern and a non-deposition region other than the deposition region. The deposition region includes a plurality of effective portions spaced apart along a longitudinal direction and non-effective portions other than the effective portions. The effective portions include: a plurality of small surface holes formed on one surface; a plurality of large surface holes formed on another surface opposite to one surface; through-holes connecting the small surface holes and the large surface holes; and island-like portions located between the plurality of through-holes. The deposition mask has a resolution of 500 PPI or higher, and the diameter of the through-holes is 33 μm or less, and the distance between the corresponding centers of two adjacent through-holes is 48 μm. m or smaller, the tilt angle of the large surface hole relative to the other surface is 40 degrees to 55 degrees, the average centerline surface roughness of the island portion in the longitudinal direction and the average centerline surface roughness in the lateral direction are 0.1 μm to 0.3 μm, and the average 10-point average surface roughness Rz in the longitudinal direction and the average 10-point average surface roughness in the lateral direction of the non-deposited area are 0.5 μm to 2.0 μm, and the value of the average centerline surface roughness in the longitudinal direction deviates from the average centerline surface roughness in the lateral direction by less than 50%, and the value of the average 10-point average surface roughness in the longitudinal direction deviates from the average 10-point average surface roughness in the lateral direction by less than 50%.

[0024] Additionally, a method for manufacturing a metal material deposition mask for OLED pixel deposition includes: a first step: preparing a metal plate, rolling and annealing the metal plate, and the metal plate having a predetermined thickness, wherein the average centerline average surface roughness and the average 10-point average surface roughness in the rolling direction are less than the average centerline average surface roughness and the average 10-point average surface roughness in the transverse direction; a second step: surface treating the metal plate such that the average centerline average surface roughness in the rolling direction and the average centerline average surface roughness in the transverse direction are in the range of 0.1 μm to 0.3 μm, respectively, and the average 10-point average surface roughness in the rolling direction and the average 10-point average surface roughness in the transverse direction are in the range of 0.5 μm to 2.0 μm, respectively; a third step: forming a plurality of large surface holes, a plurality of small surface holes, and a plurality of through holes formed by the large surface holes and small surface holes by coating and developing a patterned photoresist layer on the surface of the metal plate and etching the metal plate.

[0025] Beneficial effects

[0026] According to an embodiment, a deposition mask can be provided that minimizes deposition defects in a deposition mask made of metallic material for OLED pixel deposition with a resolution of 500 PPI or higher.

[0027] According to an embodiment, the metal plate used to manufacture the deposition mask can have a roughness deviation of 50% or less in both the longitudinal and lateral directions. Therefore, the metal plate can improve adhesion to the photoresist layer regardless of orientation. Thus, the deposition mask according to the embodiment can improve the uniformity of island portions and the uniformity of via sizes.

[0028] Furthermore, according to the embodiment, the large surface aperture of the through-hole has a first cross-sectional tilt angle in the longitudinal direction and a second cross-sectional tilt angle greater than the first cross-sectional tilt angle in the lateral direction. Therefore, in the deposition mask of the embodiment, the thickness of the central portion of the ribs arranged in the longitudinal direction can be increased by the difference between the first and second cross-sectional tilt angles. Therefore, in the embodiment, the rigidity of the deposition mask can be ensured. In addition, in the embodiment, since the rigidity of the deposition mask is ensured, length deformation can be minimized. Furthermore, in the embodiment, since the rigidity of the deposition mask is ensured, the uniformity of the mask pattern shape and the uniformity of the through-hole position can be increased. Furthermore, in the embodiment, due to the increase in uniformity, the pattern deposition efficiency of the deposition mask can be improved.

[0029] Furthermore, according to the embodiment, the tilt angle of the large surface holes of the vias arranged in a direction perpendicular to the moving direction of the organic material deposition container is reduced. Therefore, the deposition mask according to the embodiment can uniformly deposit OLED pixel patterns in all areas regardless of the location of the vias. Attached Figure Description

[0030] Figure 1 This is a perspective view showing an organic material deposition apparatus including a deposition mask according to an embodiment.

[0031] Figures 2 to 4 This is a conceptual diagram illustrating the process of depositing organic materials on a substrate using a deposition mask according to an embodiment.

[0032] Figure 5 This is a plan view showing the deposition mask according to an embodiment.

[0033] Figure 6a This is a plan view showing the effective portion of the deposition mask.

[0034] Figure 6b It is a photograph showing a plan view of the effective portion of the deposition mask.

[0035] Figure 6c Is Figure 6a or Figure 6b A view showing the overlap of a cross-sectional view taken along line A-A' and a cross-sectional view taken along line B-B'.

[0036] Figure 7 This is a view showing another plan view of the deposition mask according to an embodiment.

[0037] Figure 8 It is along the deposition mask according to the implementation method Figure 6a or Figure 6b The cross-sectional view taken by line B-B' in the diagram.

[0038] Figure 9 This is a view showing the rolling process of a metallic material.

[0039] Figure 10 and Figure 11 It is shown in Figure 9 A view of a metal sheet with a predetermined thickness after rolling and annealing.

[0040] Figure 12 and Figure 13 It is based on Figure 11 SEM image of the metal plate.

[0041] Figure 14 This is a view showing the steps of preparing a metal plate with a predetermined thickness and etching the metal plate to be thinner than the predetermined thickness to have the surface roughness of the embodiment.

[0042] Figure 15 and Figure 16 These are SEM images of the non-deposition areas of the deposition mask according to the implementation method.

[0043] Figure 17 This is a view showing the manufacturing process of a deposition mask according to an example.

[0044] Figure 18 It is a graph showing the measured roughness values ​​of the non-deposition area of ​​the deposition mask according to the example in the longitudinal, diagonal and lateral directions.

[0045] Figure 19 This is a view showing the adhesion of the photoresist layer depending on the surface roughness of the non-deposited area of ​​the deposition mask according to the example.

[0046] Figure 20 This is a view showing the shape obtained by half-etching one surface of a metal plate to evaluate the shape of an island portion of a deposition mask according to an example.

[0047] Figure 21It is a graph showing the measured roughness values ​​of the non-deposition area of ​​the deposition mask according to the comparative example in the longitudinal, diagonal and lateral directions.

[0048] Figure 22 This is a view showing the adhesion of the photoresist layer depending on the surface roughness of the non-deposited area of ​​the deposition mask according to the comparative example.

[0049] Figure 23 This is a view showing the shape obtained by half-etching one surface of a metal plate to evaluate the shape of the island portion of a deposition mask according to a comparative example.

[0050] Figure 24 This is a view showing a metal plate that has been wound around the raw material used as a deposition mask.

[0051] Figure 25 This is a view used to describe conventional methods for measuring residual stress.

[0052] Figure 26 This is a view used to describe a sample metal sheet manufactured from the metal sheet shown in the example.

[0053] Figure 27 This is a view used to describe the residual stress measurement method according to the example.

[0054] Figure 28 and Figure 29 This is a view showing a deposition pattern formed by a deposition mask according to an embodiment.

[0055] Figure 30 This is a plan view showing an effective portion of a deposition mask according to another embodiment of the present invention.

[0056] Figure 31 The various cross sections overlap to describe the direction along the curve. Figure 30 The cross section intercepted by line A-A' in the middle and along Figure 30 A view showing the height difference and dimensions between the cross sections cut by line B-B'.

[0057] Figure 32 It shows along Figure 30 The view of the cross section taken by line B-B' in the diagram.

[0058] Figure 33 It shows along Figure 30 The view of the cross section taken by line C-C' in the diagram.

[0059] Figure 34 It shows along Figure 30 The view of the cross section cut by line D-D' in the diagram.

[0060] Figure 35 This is a plan view showing an effective portion of a deposition mask according to yet another embodiment of the present invention.

[0061] Figure 36 It shows Figure 35 Cross-sectional view of the second through hole.

[0062] Figure 37 It shows Figure 35 Cross-sectional view of the third through hole. Detailed Implementation

[0063] In the following description, embodiments will be described in detail with reference to the accompanying drawings.

[0064] However, the spirit and scope of the invention are not limited to the described embodiments and can be implemented in various other forms. Furthermore, one or more elements in the embodiments can be selectively combined and substituted within the spirit and scope of the invention.

[0065] Furthermore, unless explicitly defined and described otherwise, the terms (including technical and scientific terms) used in embodiments of the present invention may be interpreted as having the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains, and terms such as those defined in common dictionaries may be interpreted as having a meaning consistent with their meaning in the context of the relevant art. Moreover, the terminology used in embodiments of the present invention is for describing embodiments and is not intended to limit the invention.

[0066] In this specification, unless specifically stated in the wording, the singular form may also include the plural form, and may include at least one combination of all combinations that can be combined with A, B, and C when described in “at least one (or more) of A, B, and C”. Furthermore, when describing elements of embodiments of the invention, terms such as first, second, A, B, (a), and (b) may be used.

[0067] These terms are used only to distinguish an element from other elements, and these terms are not limited to the nature, order, or sequence of the elements. In addition, when an element is described as “connected,” “linked,” or “connected” to another element, it can include not only cases where the element is directly “connected,” “linked,” or “connected” to other elements, but also cases where the element is “connected,” “linked,” or “connected” to another element through another element between the element and other elements.

[0068] Furthermore, when described as being formed or arranged "above" or "below" in each element, "above" or "below" can include not only cases where two elements are directly connected to each other, but also cases where one or more other elements are formed or arranged between the two elements. Additionally, when expressed as "above" or "below," it can be based on an element in a direction that includes both upward and downward directions.

[0069] Reference Figures 1 to 4 This describes the process of depositing organic materials on a substrate using a deposition mask according to an embodiment.

[0070] Reference Figures 1 to 4 The organic material deposition apparatus may include a deposition mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

[0071] The deposition mask 100 may include a metal. For example, the deposition mask may include iron (Fe) and nickel (Ni). The deposition mask 100 may include a plurality of vias TH in the effective portion for deposition. The deposition mask 100 may be a substrate for a deposition mask including a plurality of vias TH. In this case, vias may be formed to correspond to a pattern to be formed on the substrate. In addition to the effective portion including the deposition area, the deposition mask 100 may also include non-effective portions.

[0072] The mask frame 200 may include openings 205. Multiple through-holes of the deposition mask 100 may be provided in regions corresponding to the openings 205. Therefore, organic material supplied to the organic material deposition container 400 can be deposited on the substrate 300. The deposition mask can be deposited and fixed to the mask frame 200. For example, the deposition mask can be drawn and fixed to the mask frame 200 by soldering.

[0073] That is, the mask frame 200 includes multiple frames 201, 202, 203, and 204 surrounding the opening 205. The multiple frames 20, 202, 203, and 204 can be connected to each other. The mask frame 200 faces each other in the x-direction and includes a first frame 201 and a second frame 202 extending in the y-direction. Furthermore, the mask frame 200 faces each other in the y-direction and includes a third frame 203 and a fourth frame 204 extending in the x-direction. The first frame 201, the second frame 202, the third frame 203, and the fourth frame 204 can be rectangular frames connected to each other. The mask frame 200 can be made of a material that deforms little during the welding of the deposition mask 130, for example, a metal with high rigidity.

[0074] Reference Figure 2 and Figure 3During the deposition process, the deposition mask 100 can be pulled in opposite directions at its outermost end. In the deposition mask 100, one end and the opposite end can be pulled in opposite directions along the longitudinal direction of the deposition mask 100. As an example, the stretching direction, x-axis direction, and longitudinal direction of the deposition mask 100 can all be the same. One end and the other end of the deposition mask 100 can face each other and be arranged parallel to each other. One end of the deposition mask 100 can be one of the end portions forming the four side surfaces of the outermost portion of the deposition mask 100. For example, the deposition mask 100 can be pulled with a tensile force of 0.1 kgf to 2 kgf. Specifically, the deposition mask 100 can be pulled with a tensile force of 0.4 kgf to 1.5 kgf to be fixed to the mask frame 200. Therefore, the stress on the deposition mask 100 can be reduced. However, the implementation is not limited to this, and the deposition mask 100 can be pulled out by various tensile forces that can reduce its stress in order to be fixed to the mask frame 200.

[0075] Then, the deposition mask 100 can be fixed to the mask frame 200 by welding the non-functional parts of the deposition mask 100. Subsequently, the portion of the deposition mask 100 located outside the mask frame 200 can be removed by, for example, cutting.

[0076] The substrate 300 can be a substrate used to manufacture a display device. For example, the substrate 300 can be a substrate 300 used to deposit organic materials for OLED pixel patterns. Patterns of red (R), green (G), and blue (B) can be formed on the substrate 300 to form pixels that are the three primary colors of light. That is, RGB patterns can be formed on the substrate 300.

[0077] The organic material deposition container 400 can be a crucible. Organic material can be disposed inside the crucible. The organic material deposition container 400 can move within the vacuum chamber 500. That is, the organic material deposition container 400 can move within the vacuum chamber 500 along the y-axis. That is, the organic material deposition container 400 can move within the vacuum chamber 500 along the lateral direction of the deposition mask 100. That is, the organic material deposition container 400 can move within the vacuum chamber 500 in a direction perpendicular to the stretching direction of the deposition mask 100.

[0078] When a heat source and / or current is supplied to a crucible in a vacuum chamber 500 that serves as an organic deposition container 400, organic materials can be deposited on a substrate 100.

[0079] Figure 4 This is a view showing multiple deposition patterns formed on a substrate 300 through multiple through-holes of a deposition mask 100.

[0080] The deposition mask 100 may include a first surface 101 and a second surface 102 facing the first surface.

[0081] The first surface 101 of the deposition mask 100 may include a small surface aperture V1, and the second surface 102 of the deposition mask 100 may include a large surface aperture V2. The vias may be connected by a connecting portion CA, to which the boundary between the small surface aperture V1 and the large surface aperture V2 is connected.

[0082] The deposition mask 100 may include a first etched surface ES1 in the small surface aperture V1. The deposition mask 100 may include a second etched surface ES2 in the large surface aperture V2. A through-hole can be formed by connecting the first etched surface ES1 in the small surface aperture V1 with the second etched surface ES2 in the large surface aperture V2. For example, the first etched surface ES1 in a small surface aperture V1 may be connected with the second etched surface ES2 in a large surface aperture V2 to form a through-hole.

[0083] The width of the large surface hole V2 can be greater than the width of the small surface hole V1. In this case, the width of the small surface hole V1 can be measured at the first surface 101, and the width of the large surface hole V2 can be measured at the second surface 102.

[0084] The small surface hole V1 can be disposed facing the substrate 300. The small surface hole V1 can be disposed close to the substrate 300. Therefore, the small surface hole V1 can have a shape corresponding to the deposited material, i.e., the deposited pattern DP.

[0085] The large surface aperture V2 can be arranged toward the organic material deposition container 400. Therefore, the large surface aperture V2 can accommodate organic material supplied from the organic material deposition container 400 with a wide width, and fine patterns can be quickly formed on the substrate 300 through the small surface aperture V1 with a width smaller than that of the large surface aperture V2.

[0086] Figure 5 This is a plan view showing a deposition mask according to an embodiment. (Refer to...) Figure 5 The deposition mask according to the embodiment may include a deposition region DA and a non-deposition region NDA.

[0087] The deposition region DA can be a region used to form a deposition pattern. A deposition mask can include multiple deposition regions DA. For example, the deposition region DA in an embodiment can include multiple effective portions AA1, AA2, and AA3 capable of forming multiple deposition patterns.

[0088] Multiple effective portions may include a first effective portion AA1, a second effective portion AA2, and a third effective portion AA3. A depositional region DA may be any one of the first effective portion AA1, the second effective portion AA2, and the third effective portion AA3.

[0089] In the case of small display devices such as smartphones, an effective portion of any one of the multiple deposition regions included in the deposition mask can be an effective portion for forming a display device. Therefore, a deposition mask can include multiple effective portions to simultaneously form multiple display devices. Thus, the deposition mask according to the embodiment can improve processing efficiency.

[0090] Alternatively, in the case of large display devices such as televisions, multiple effective portions included in a deposition mask can be used to form part of a display device. In this case, the multiple effective portions can be used to prevent deformation due to loads on the mask.

[0091] The deposition region DA may include multiple isolation regions IA1 and IA2 contained within a deposition mask. Isolation regions IA1 and IA2 may be positioned between adjacent effective portions. Isolation regions IA1 and IA2 may also be spacers between multiple effective portions. For example, a first isolation region IA1 may be positioned between a first effective portion AA1 and a second effective portion AA2. Similarly, a second isolation region IA2 may be positioned between a second effective portion AA2 and a third effective portion AA3. The isolation regions distinguish adjacent effective regions, and multiple effective portions may be supported by a single deposition mask.

[0092] Isolation regions IA1 and IA2 can have the same height as the island portion, non-deposited area, or ineffective area. Isolation regions IA1 and IA2 can be areas that were not etched during via formation.

[0093] The deposition mask may include non-deposition regions NDA on both sides of the deposition region DA in the longitudinal direction. According to an embodiment, the deposition mask may include non-deposition regions NDA on both sides of the deposition region DA in the horizontal direction.

[0094] The non-deposition region NDA of the deposition mask can be a region that does not participate in deposition. The non-deposition region NDA may include frame fixing regions FA1 and FA2 for securing the deposition mask to the mask frame. For example, the non-deposition region NDA of the deposition mask may include a first frame fixing region FA1 on one side of the deposition region DA, and a second frame fixing region FA2 on the opposite side. The first frame fixing region FA1 and the second frame fixing region FA2 may be regions fixed to the mask frame by welding.

[0095] The non-deposition region NDA may include half-etched portions HF1 and HF2. For example, the non-deposition region NDA of the deposition mask may include a first half-etched portion HF1 on one side of the deposition region DA, and may include a second half-etched portion HF2 on the opposite side of the deposition region DA. The first half-etched portion HF1 and the second half-etched portion HF2 may be regions in which grooves are formed in the depth direction of the deposition mask. The first half-etched portion HF1 and the second half-etched portion HF2 may have grooves with a thickness of approximately 1 / 2 of the deposition mask, thereby dispersing stress when the deposition mask is pulled out.

[0096] The semi-etched portion can be formed simultaneously with the formation of small or large surface holes. Therefore, processing efficiency can be improved.

[0097] A surface treatment layer, different from the material of the metal substrate, can be formed in the deposition region DA of the deposition mask, and the surface treatment layer may not be formed in the non-deposition region NDA. Alternatively, the surface treatment layer, different from the material of the metal substrate, can be formed only on one surface of the deposition mask or on the opposite surface. Alternatively, the surface treatment layer, different from the material of the metal substrate, can be formed only on a portion of one surface of the deposition mask. For example, one surface and / or another surface of the deposition mask, and an entire portion and / or a portion of the deposition mask, may include a surface treatment layer having an etch rate lower than that of the material of the metal substrate, thereby improving the etch factor. Therefore, the deposition mask of the embodiment can efficiently form vias with fine dimensions. As an example, the deposition mask of the embodiment can efficiently form deposition patterns with a high resolution of 500 PPI or higher. Here, the surface treatment layer may include a material different from the material of the metal substrate, or may include a metallic material with a different composition having the same elements.

[0098] The semi-etched portions can be formed in the ineffective portion UA ​​of the deposition region DA. The semi-etched portions can be distributed throughout or in part of the ineffective portion UA ​​and arranged in multiple ways to distribute the stress when the deposition mask is pulled out.

[0099] Additionally, the semi-etched portion can be formed in the frame fixing region and / or the outer peripheral region of the frame fixing region. Therefore, the stress on the deposition mask generated when the deposition mask is fixed to the mask frame and / or when the deposition material is deposited after the deposition mask is fixed to the mask frame can be uniformly distributed. Thus, the deposition mask can be maintained with uniform vias.

[0100] The frame fixing regions FA1 and FA2 for fixing the mask frame to the non-deposited region NDA can be disposed between the half-etched portions HF1 and HF2 of the non-deposited region NDA and the effective portions of the deposited region DA adjacent to the half-etched portions HF1 and HF2. For example, the first frame fixing region FA1 can be disposed between the first half-etched portion HF1 of the non-deposited region NDA and the first effective portion AA1 of the deposited region DA adjacent to the first half-etched portion HF1. ​​For example, the second frame fixing region FA2 can be disposed between the second half-etched portion HF2 of the non-deposited region NDA and the third effective portion AA3 of the deposited region DA adjacent to the second half-etched portion HF2. Therefore, multiple deposited pattern portions can be fixed simultaneously.

[0101] The deposition mask may include semi-circular openings at both ends in the horizontal direction X. The non-deposition area NDA of the deposition mask may include a semi-circular opening at each of the two ends in the horizontal direction. For example, the non-deposition area NDA of the deposition mask may include an opening whose center in the vertical direction Y opens to one side in the horizontal direction. Alternatively, the non-deposition area NDA of the deposition mask may include an opening whose center in the vertical direction opens to the opposite side. That is, the two ends of the deposition mask may include openings at half the length in the vertical direction. For example, the two ends of the deposition mask may be shaped like a horseshoe.

[0102] The semi-etched portions included in the deposition mask of the embodiment can be formed in various shapes. The semi-etched portions may include semi-circular groove portions. The grooves may be formed on at least one of a surface of the deposition mask and another surface opposite to that surface. Preferably, the semi-etched portions may be formed on the surface corresponding to the small surface apertures (the surface side to be deposited). Therefore, the semi-etched portions can be formed simultaneously with small surface apertures, thereby improving processing efficiency. Additionally, the semi-etched portions can disperse stress that may arise due to dimensional differences between large surface apertures.

[0103] Alternatively, half-etched portions can be formed on both sides of the deposition mask to disperse stress on the deposition mask. In this case, the half-etched area of ​​the half-etched portion can widen in the plane corresponding to the first surface aperture (the surface side to be deposited). That is, the deposition mask according to the embodiment can include half-etched portions because grooves are formed on the first and second surfaces of the deposition mask, respectively. Specifically, the depth of the groove of the half-etched portion formed on the first surface can be greater than the depth of the groove of the half-etched portion formed on the second surface. Therefore, the half-etched portions can disperse stress that may occur due to the size difference between the small and large surface apertures. The formation of the small surface aperture, the large surface aperture, and the half-etched portions can make the surface areas on the first and second surfaces of the deposition mask similar to each other, thereby preventing via displacement.

[0104] Furthermore, the grooves formed on the first and second surfaces can be configured to be displaced relative to each other. Therefore, the half-etched portion may not pass through.

[0105] The semi-etched portion may include a curved surface and a flat surface. The flat surface of the first semi-etched portion HF1 may be arranged adjacent to the first effective region AA1, and the flat surface may be arranged horizontally with an end in the longitudinal direction of the deposition mask. The curved surface of the first semi-etched portion HF1 may have a convex shape with one end facing the longitudinal direction of the deposition mask. For example, the curved surface of the first semi-etched portion HF1 may be formed such that half a point of its length in the vertical direction of the deposition mask corresponds to the radius of a semicircle.

[0106] The flat surface of the second half-etched portion HF2 can be arranged adjacent to the third effective region AA3, and the flat surface can be arranged horizontally with an end in the longitudinal direction of the deposition mask. The curved surface of the second half-etched portion HF2 can have a convex shape toward the other end in the longitudinal direction of the deposition mask. For example, the curved surface of the second half-etched portion HF2 can be formed such that half a point of its length in the vertical direction of the deposition mask corresponds to the radius of a semicircle.

[0107] Simultaneously, the curved surfaces of the openings located at both ends of the deposition mask can point towards the half-etched portions. Therefore, the openings at both ends of the deposition mask can have the shortest separation distance at the point where the first or second half-etched portion and the deposition mask's vertical length are at 1 / 2.

[0108] Although not shown in the accompanying drawings, the half-etched portions can have a quadrilateral shape. The first half-etched portion HF1 and the second half-etched portion HF2 can have a rectangular or square shape.

[0109] The deposition mask according to an embodiment may include multiple half-etched portions. The deposition mask according to an embodiment may include multiple half-etched portions in at least one of the deposition region DA and the non-deposition region NDA. The deposition mask according to an embodiment may include half-etched portions only in the ineffective portion UA. The ineffective portion UA ​​may be a region other than the effective portion AA.

[0110] The deposition mask according to an embodiment may include two half-etched portions. Although not shown in the figures, the deposition mask according to an embodiment may include four half-etched portions. For example, the half-etched portions may include an even number of half-etched portions, thereby effectively dispersing stress. The deposition mask according to an embodiment may be disposed only in the non-deposition region NDA.

[0111] Preferably, the semi-etched portion is formed symmetrically with respect to the center of the mask in the X-axis or Y-axis direction. This ensures that the tension in both directions is equal.

[0112] The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 can correspond to the vertical length d2 of the opening portion. Therefore, when the deposition mask is pulled, the stress can be uniformly distributed, thereby reducing the deformation (wave deformation) of the deposition mask. Thus, the deposition mask according to the embodiment can have uniform vias, thereby improving the pattern deposition efficiency. Preferably, the vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 can be about 80% to 200% of the vertical length d2 of the opening portion (d1:d2 = 0.8 to 2:1). The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 can be about 90% to about 150% of the vertical length d2 of the opening portion (d1:d2 = 0.9 to 1.5:1). The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 can be about 95% to about 110% of the vertical length d2 of the opening portion (d1:d2 = 0.95 to 1.1:1).

[0113] The deposition mask may include multiple effective portions AA1, AA2 and AA3 spaced apart in the longitudinal direction, and ineffective portions UA in addition to the effective portions.

[0114] The effective portions AA1, AA2, and AA3 of the deposition mask may include multiple vias TH and island portions IS supported between the multiple vias TH. The island portion IS may refer to a portion of the effective portion of the deposition mask that was not etched when the vias were formed. Specifically, the island portion IS may be an unetched area between vias on another surface where large surface holes of the effective portion of the deposition mask are formed. Therefore, the island portion IS may be arranged parallel to one surface of the deposition mask.

[0115] The island portion IS can be coplanar with another surface of the deposition mask. Therefore, the island portion IS can have the same thickness as at least a portion of the ineffective portion on the other surface of the deposition mask. Specifically, the island portion IS can have the same thickness as the unetched portion of the ineffective portion on the other surface of the deposition mask. Therefore, the deposition uniformity of sub-pixels can be improved by using the deposition mask.

[0116] Alternatively, the island portion IS can be disposed in a flat surface parallel to the other surface of the deposition mask. Here, the parallel flat surface can include a height difference of ±1 μm or less between the other surface of the deposition mask containing the island portion IS and the other surface of the unetched deposition mask containing the ineffective portion, achieved by an etching process around the island portion IS.

[0117] The island-shaped portion IS can be located between adjacent vias in a plurality of vias. That is, the area other than the vias can be the island-shaped portion IS in the effective portions AA1, AA2 and AA3 of the deposition mask 100.

[0118] The effective portions AA1, AA2 and AA3 may include a plurality of small surface holes V1 formed on one surface of the deposition mask 100, a plurality of large surface holes V2 formed on another surface opposite to one surface, and a through hole TH formed by a connecting portion CA, wherein the boundary between the small surface holes and the large surface holes is connected in the connecting portion CA.

[0119] The deposition mask 100 may include an ineffective portion UA ​​disposed at the periphery of the effective area.

[0120] The effective portion AA can be the internal region connected to the outer periphery of the outermost through-hole used for depositing organic material among multiple through-holes. The ineffective portion UA ​​can be the external region connected to the outer periphery of the outermost through-hole used for depositing organic material among multiple through-holes.

[0121] The ineffective region UA ​​is the region outside the effective regions of the sedimentary region DA and the non-sedimentary region NDA. The ineffective region UA ​​may include the outer regions OA1, OA2, and OA3 surrounding the effective regions AA1, AA2, and AA3.

[0122] The deposition mask according to the embodiment may include multiple outer regions OA1, OA2, and OA3. The number of outer regions may correspond to the number of effective portions. That is, an effective portion may include an outer region spaced apart from the end of an effective portion by a predetermined distance in both the horizontal and vertical directions.

[0123] A first effective portion AA1 may be included in a first outer region OA1. The first effective portion AA1 may include a plurality of through-holes for forming deposited material. The first outer region OA1 surrounding the outer periphery of the first effective portion AA1 may include a plurality of through-holes.

[0124] The shape of the through-hole TH in the first effective portion AA1 can correspond to the shape of the through-hole in the first outer region OA1. Therefore, the uniformity of the through-holes included in the first effective portion AA1 can be improved. For example, the shape of the through-hole TH in the first effective portion AA1 and the shape of the through-hole in the first outer region OA1 can be circular. However, the implementation is not limited to this, and the through-holes can have various shapes, such as rhomboid patterns, elliptical patterns, etc.

[0125] Multiple vias included in the first outer region OA1 are used to reduce etching defects of vias located at the outermost portion of the effective portion. Therefore, the deposition mask according to the embodiment can improve the uniformity of the multiple vias located in the effective portion and can improve the quality of the deposition pattern formed by the deposition mask.

[0126] The shape of the through-hole included in the effective portion can partially correspond to the shape of the through-hole included in the ineffective portion. As an example, the through-hole included in the effective portion can have a different shape than the through-hole located at the edge of the ineffective portion. Therefore, the stress difference can be adjusted according to the position of the deposition mask.

[0127] The second effective portion AA2 may be included in the second outer region OA2. The second effective portion AA2 may have a shape corresponding to the first effective portion AA1. The second outer region OA2 may have a shape corresponding to the first outer region OA1.

[0128] The second outer region OA2 may also include two through-holes in both the horizontal and vertical directions, starting from the through-hole located at the outermost portion of the second effective portion AA2. For example, in the second outer region OA2, two through-holes may be arranged in a row in the horizontal direction at the upper and lower portions of the through-hole located at the outermost portion of the second effective portion AA2. For example, in the second outer region OA2, two through-holes may be arranged in a row in the vertical direction at the left and right sides of the through-hole located at the outermost portion of the second effective portion AA2. The multiple through-holes included in the second outer region OA2 are used to reduce etching defects of the through-holes located at the outermost portion of the effective portion. Therefore, the deposition mask according to the embodiment can improve the uniformity of the multiple through-holes located in the effective portion and can improve the quality of the deposition pattern manufactured by the deposition mask.

[0129] The third effective portion AA3 may be included in the third outer region OA3. The third effective portion AA3 may include multiple through-holes for forming the deposited material. The third outer region OA3 surrounding the outer periphery of the third effective portion AA3 may include multiple through-holes.

[0130] The third effective portion AA3 may have a shape corresponding to the shape of the first effective portion AA1. The third outer region OA3 may have a shape corresponding to the shape of the first outer region OA1.

[0131] The surface roughness value measured in the non-deposition area NDA of the deposition mask according to the embodiment, excluding the semi-etched portions HF1 and HF2, can have a predetermined range in a diagonal direction located at approximately 45 degrees in both the longitudinal (x-direction) and lateral (y-direction) directions. The diagonal direction can be an angle of approximately +45 degrees or approximately -45 degrees, and can refer to the angle between the x and y directions. The diagonal direction can include an angle between +40 and +50 degrees or between -40 and -50 degrees.

[0132] In the non-deposition region DA, the average centerline surface roughness in the longitudinal direction, the average centerline surface roughness in the diagonal direction at approximately +45 degrees, the average centerline surface roughness in the diagonal direction at approximately -45 degrees, and the average centerline surface roughness in the lateral direction can be from 0.1 μm to 0.3 μm, and in the non-deposition region DA, the average 10-point surface roughness in the longitudinal direction, the average 10-point surface roughness in the diagonal direction at approximately +45 degrees, the average 10-point surface roughness in the diagonal direction at approximately -45 degrees, and the average 10-point surface roughness in the lateral direction can be from 0.5 μm to 2.0 μm. For example, in the non-deposition region DA, the average centerline surface roughness in the longitudinal direction, the average centerline surface roughness in the diagonal direction at approximately +45 degrees, the average centerline surface roughness in the diagonal direction at approximately -45 degrees, and the average centerline surface roughness in the lateral direction can be from 0.1 μm to 0.2 μm, and in the non-deposition region DA, the average 10-point surface roughness in the longitudinal direction, the average 10-point surface roughness in the diagonal direction at approximately +45 degrees, the average 10-point surface roughness in the diagonal direction at approximately -45 degrees, and the average 10-point surface roughness in the lateral direction can be from 0.5 μm to 1.5 μm. For example, in the non-deposition region DA, the average centerline surface roughness in the longitudinal direction, the average centerline surface roughness in the diagonal direction at approximately +45 degrees, the average centerline surface roughness in the diagonal direction at approximately -45 degrees, and the average centerline surface roughness in the lateral direction can be from 0.1 μm to 0.15 μm, and in the non-deposition region DA, the average 10-point surface roughness in the longitudinal direction, the average 10-point surface roughness in the diagonal direction at approximately +45 degrees, the average 10-point surface roughness in the diagonal direction at approximately -45 degrees, and the average 10-point surface roughness in the lateral direction can be from 0.5 μm to 1.0 μm.

[0133] In the OLED deposition mask with a resolution of 500 PPI or higher, which is four times higher than that of QHD, the diameter of the vias can be 33 μm or less, the distance between the centers of two adjacent vias in a plurality of vias can be 48 μm or less, the tilt angle of the large surface vias relative to another surface can be 40 degrees to 55 degrees, the deviation of the average surface roughness (Ra(RD)) of the average centerline in the longitudinal direction relative to the average surface roughness (Ra(TD)) of the average centerline in the lateral direction ((|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be less than 50%, and the deviation of the average surface roughness (Rz(RD)) of the average 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average 10 points in the lateral direction ((|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be less than 50%.

[0134] In the OLED deposition mask with a UHD resolution of 800 PPI or higher in the embodiment, the diameter of the via can be 20 μm or less, the tilt angle of the large surface via relative to another surface can be 45 degrees to 55 degrees, the distance between the centers of two adjacent vias in a plurality of vias can be 32 μm or less, the deviation of the average surface roughness (Ra(RD)) of the average centerline in the longitudinal direction relative to the average surface roughness (Ra(TD)) of the average centerline in the lateral direction ((|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be 30% or less, and the deviation of the average surface roughness (Rz(RD)) of the average 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average 10 points in the lateral direction ((|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be 30% or less. For example, the deviation of the average surface roughness (Ra(RD)) of the average centerline in the longitudinal direction relative to the average surface roughness (Ra(TD)) of the average centerline in the lateral direction ((|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be 15% or less, and the deviation of the average surface roughness (Rz(RD)) of the average 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average 10 points in the lateral direction ((|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be 15% or less.

[0135] For example, the deviation of the average surface roughness (Ra(RD)) of the average centerline in the longitudinal direction relative to the average surface roughness (Ra(TD)) of the average centerline in the lateral direction ((|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be 13% or less, and the deviation of the average surface roughness (Rz(RD)) of the average 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average 10 points in the lateral direction ((|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be 10% or less.

[0136] The deposition region may include ineffective portions in areas other than the effective portions, and the surface roughness of the island-like portions within the ineffective portions may be as follows: the average centerline surface roughness in the longitudinal direction, the average centerline surface roughness in the diagonal direction, and the average centerline surface roughness in the lateral direction may be 0.1 μm to 0.3 μm; and the average 10-point surface roughness in the longitudinal direction, the average 10-point surface roughness in the diagonal direction, and the average 10-point surface roughness in the lateral direction may be 0.5 μm to 2.0 μm. The deviation of the average surface roughness (Ra(RD)) of the average centerline relative to the average surface roughness (Ra(TD)) of the average centerline in the lateral direction ((|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be less than 50%, and the deviation of the average surface roughness (Rz(RD)) of the average 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average 10 points in the lateral direction ((|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be less than 50%.

[0137] Alternatively, in the surface roughness of the island-shaped portions in the ineffective portion, the average centerline surface roughness in the longitudinal direction, the average centerline surface roughness in the diagonal direction, and the average centerline surface roughness in the lateral direction can be 0.1 μm to 0.2 μm, and the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction can be 0.5 μm to 1.5 μm, and the average surface roughness of the average centerline in the longitudinal direction... The deviation of the roughness (Ra(RD)) value relative to the average surface roughness (Ra(TD)) of the average centerline in the lateral direction ((|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be less than 30%, and the deviation of the average surface roughness (Rz(RD)) of the average 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average 10 points in the lateral direction ((|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be less than 30%.

[0138] Alternatively, in the surface roughness of the island-shaped portions in the non-effective portion, the average centerline surface roughness in the longitudinal direction, the average centerline surface roughness in the diagonal direction, and the average centerline surface roughness in the lateral direction can be from 0.1 μm to 0.15 μm, and the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction can be from 0.5 μm to 1.0 μm, and the average surface roughness of the average centerline in the longitudinal direction... The deviation of the roughness (Ra(RD)) value relative to the average surface roughness (Ra(TD)) of the average centerline in the lateral direction ((|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be less than 15%, and the deviation of the average surface roughness (Rz(RD)) of the average 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average 10 points in the lateral direction ((|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be less than 15%.

[0139] In the isolation regions IA1 and IA2 located between adjacent effective portions AA1, AA2 and AA3, the average surface roughness along the centerline in the longitudinal direction, the average surface roughness along the centerline in the diagonal direction, and the average surface roughness along the centerline in the lateral direction can be from 0.1 μm to 0.3 μm, and in the non-effective portion, the average surface roughness at 10 points in the longitudinal direction, the average surface roughness at 10 points in the diagonal direction, and the average surface roughness at 10 points in the lateral direction can be from 0.5 μm to 2.0 μm.

[0140] Figure 6a , Figure 6b and Figure 7 These are plan views and photographs showing the effective portion of the deposition mask. Figure 6a , Figure 6b and Figure 7 It is a plan view or photograph of the effective portion of any one of the first effective portion AA1, the second effective portion AA2, and the third effective portion AA3. Figure 6a , Figure 6b and Figure 7 These are views used to describe the shape of the vias and the arrangement of the vias, and of course, the deposition mask according to the embodiment is not limited to the number of vias shown in the figures.

[0141] Reference Figure 6a and Figure 6b The deposition mask 100 may include multiple vias. These vias may have a circular shape. Therefore, the horizontal diameter Cx and the vertical diameter Cy of the vias may correspond to each other.

[0142] Alternatively, refer to Figure 7The through-hole can be elliptical in shape. Therefore, the horizontal diameter Cx and the vertical diameter Cy of the through-hole can be different from each other. For example, the horizontal diameter Cx of the through-hole can be larger than the vertical diameter Cy. However, the implementation is not limited to this; of course, the through-hole can have a rectangular shape, an octagonal shape, or a circular octagonal shape. As an example, when measuring the horizontal diameter Cx and the vertical diameter Cy of a reference hole that is any of the through-holes, the deviation between the horizontal diameter Cx and the vertical diameter Cy of each hole adjacent to the reference hole can be achieved to be 2% to 10%. That is, when the dimensional deviation between adjacent holes of a reference hole is achieved to be 2% to 10%, deposition uniformity can be ensured. The dimensional deviation between the reference hole and adjacent holes can be 4% to 9%. For example, the dimensional deviation between the reference hole and adjacent holes can be 5% to 7%. For example, the dimensional deviation between the reference hole and adjacent holes can be 2% to 5%. When the dimensional deviation between the reference aperture and adjacent apertures is less than 2%, the incidence of moiré patterns in the deposited OLED panel can be increased. When the dimensional deviation between the reference aperture and adjacent apertures is greater than 10%, the incidence of color inhomogeneity in the deposited OLED panel can be increased. The average deviation of the via diameter can be ±5 μm. For example, the average deviation of the via diameter can be ±3 μm. For example, the average deviation of the via diameter can be ±1 μm. In this embodiment, deposition efficiency can be improved by achieving a dimensional deviation between the reference aperture and adjacent apertures within ±3 μm.

[0143] Through holes can be arranged in rows or intersected according to their direction. (See reference) Figure 6a and Figure 6b Through holes can be arranged in rows along the vertical axis or in rows along the horizontal axis.

[0144] The first through hole TH1 and the second through hole TH2 can be arranged in a row along the horizontal axis. In addition, the third through hole TH1 and the fourth through hole TH4 can be arranged in a row along the horizontal axis.

[0145] The first through hole TH1 and the third through hole TH3 can be arranged in a row along the vertical axis. In addition, the second through hole TH2 and the fourth through hole TH4 can be arranged in a row along the vertical axis.

[0146] When through holes are arranged in a row along the vertical and horizontal axes, the island-shaped portion is placed between two adjacent through holes along the diagonal direction, where the vertical and horizontal axes intersect. That is, the island-shaped portion can be located between two adjacent through holes positioned relative to each other in the diagonal direction.

[0147] The island-shaped portion IS can be positioned between the first through-hole TH1 and the fourth through-hole TH4. Furthermore, the island-shaped portion IS can be positioned between the second through-hole TH2 and the third through-hole TH3. The island-shaped portion IS can be positioned accordingly at an angle of approximately +45 degrees and approximately -45 degrees relative to the horizontal axis traversing the two adjacent through-holes. Here, the approximately ±45 degree angle of inclination can represent the diagonal direction between the horizontal axis and the vertical axis, and the diagonal inclination angle is measured on the same plane as the horizontal axis and the vertical axis.

[0148] Reference Figure 7 Through holes are arranged in rows on either the vertical or horizontal axis, and may intersect each other on one axis.

[0149] The first through hole TH1 and the second through hole TH2 can be arranged in a row on the horizontal axis. The third through hole TH1 and the fourth through hole TH4 can be arranged to pass through the first through hole TH1 and the second through hole TH2 respectively on the vertical axis.

[0150] When through holes are arranged in a row in either the vertical or horizontal axis and extend through the other direction, the island portion can be positioned between two adjacent through holes in the other direction of the vertical or horizontal axis. Alternatively, the island portion can be positioned between three adjacent through holes. Two of the three adjacent through holes are arranged in a row, and the remaining through hole can refer to a through hole located in the region between two adjacent through holes in a direction corresponding to the direction of the row. The island portion IS can be positioned between the first through hole TH1, the second through hole TH2, and the third through hole TH3. Alternatively, the island portion IS can be positioned between the second through hole TH2, the third through hole TH3, and the fourth through hole TH4.

[0151] Figure 6a , Figure 6b and Figure 7 The island portion IS can refer to the unetched surface between the vias in the other surface of the large surface aperture of the effective portion AA of the deposition mask. Specifically, the island portion IS can be the other surface of the unetched deposition mask, excluding the second etched surface ES2 and the via TH located in the large surface aperture of the effective portion AA of the deposition mask. The deposition mask of this embodiment can be used to deposit high-resolution to ultra-high-resolution OLED pixels with a resolution of 500 PPI to 800 PPI or higher.

[0152] For example, the deposition mask of the embodiment can be used to form a high-resolution deposition pattern with a resolution of 500 PPI or higher, which is four times higher than QHD. For example, the deposition mask of the embodiment can be used to deposit OLED pixels with a pixel count of 2560*1440 or higher in both the horizontal and vertical directions and a resolution of 530 PPI or higher. According to the deposition mask of the embodiment, based on a 5.5-inch OLED panel, the number of pixels per inch can be 530 PPI or more. That is, an effective portion of the deposition mask included in the embodiment can be used to form a pixel count of 2560*1440 or higher.

[0153] For example, the deposition mask of the embodiment can be used to form an ultra-high resolution deposition pattern with a resolution of 700 PPI or higher. For example, the deposition mask of the embodiment can be used to form a deposition pattern with UHD-level resolution for depositing OLED pixels with a pixel count of 3840*2160 or greater in both the horizontal and vertical directions and a resolution of 794 PPI (800 PPI level) or higher.

[0154] The diameter of a through-hole can be the width between the connected portions CA. Specifically, the diameter of a through-hole can be measured at the point where the end of the inner surface in the smaller surface hole intersects with the end of the inner surface in the larger surface hole. The measurement direction of the through-hole diameter can be any of the horizontal, vertical, and diagonal directions. The diameter of a through-hole measured in the horizontal direction can be 33 μm or less. Alternatively, the diameter of a through-hole measured in the horizontal direction can be 33 μm or less. Alternatively, the diameter of the through-hole can be the average of the values ​​measured in the horizontal, vertical, and diagonal directions, respectively.

[0155] Therefore, the deposition mask according to the implementation method can achieve QHD resolution.

[0156] For example, the diameter of the via in the horizontal direction can be 20 μm or less. Therefore, the deposition mask according to the embodiment can achieve UHD resolution.

[0157] For example, the diameter of the via can be from 15 μm to 33 μm. Alternatively, the diameter can be from 19 μm to 33 μm. Or, the diameter can be from 20 μm to 17 μm. When the diameter of the via exceeds 33 μm, it may be difficult to achieve a resolution of 500 PPI or higher. On the other hand, when the diameter of the via is less than 15 μm, poor deposition may occur.

[0158] The diameter of the vias can be measured based on the green (G) pattern. This is because the G pattern in the R, G, and B patterns has a lower visual recognition rate, thus requiring a larger number of vias than the R and B patterns, and the spacing between vias may be narrower than in the R and B patterns.

[0159] The measurement direction of the diameter of a through hole and the measurement direction of the distance between two through holes can be the same. The distance between through holes can be a value measured between two adjacent through holes in the horizontal or vertical direction.

[0160] Reference Figure 6a and Figure 6b The spacing between two adjacent through holes in a plurality of through holes in the horizontal direction can be 48 μm or less. For example, the spacing between two adjacent through holes in a plurality of through holes in the horizontal direction can be from 20 μm to 48 μm. For example, the spacing between two adjacent through holes in a plurality of through holes in the horizontal direction can be from 30 μm to 35 μm.

[0161] Here, the spacing can refer to the distance P1 between the center of the first through hole TH1 and the center of the second through hole TH2 in the horizontal direction.

[0162] Alternatively, here, the spacing can refer to the distance P2 between the centers of the first and second island portions that are adjacent in the horizontal direction. Here, the center of an island portion can be the center of another unetched surface between four adjacent vias in the horizontal and vertical directions. For example, based on the first via TH1 and the second via TH2 that are adjacent in the horizontal direction, the center of an island portion can refer to the point where the horizontal and vertical axes intersect, connecting the edges of an island portion IS located between a third via TH3, which is vertically adjacent to the first via TH1, and a fourth via TH4, which is vertically adjacent to the second via TH2.

[0163] Alternatively, the spacing can refer to the distance P2 between the center of the first island portion and the center of the second island portion adjacent to the first island portion in the horizontal direction.

[0164] Reference Figure 7 The spacing can refer to the distance P2 between the centers of the first and second adjacent island portions in the horizontal direction. Here, the center of an island portion can be the center of an unetched surface between a via and two adjacent vias in the vertical direction. Alternatively, the center of an island portion can be the center of an unetched surface between two vias and an adjacent via in the vertical direction. That is, the center of an island portion is the center of the unetched surface between three adjacent vias, and these three adjacent vias can refer to those that form a triangle when connected at their centers.

[0165] For example, the center of the island-shaped portion may be the center of another surface that is not etched between the third via TH3 and the first via TH1 and the second via TH2, wherein the third via TH3 is at least partially or completely located in the region between the vertical direction of each of the first via TH1 and the second via TH2 that are adjacent to each other in the horizontal direction.

[0166] In the deposition mask according to the embodiment, the diameter of the vias is 33 μm or less, and the spacing between the vias is 48 μm or less, thus allowing the deposition of OLED pixels with a resolution of 500 PPI or greater. In other words, QHD resolution can be implemented using the deposition mask according to the embodiment.

[0167] The diameter of the vias and the spacing between them can be the dimensions used to form the green subpixels. The deposition mask can be an OLED deposition mask used to achieve four times the display pixels (quad high display pixels).

[0168] For example, a deposition mask can be used to deposit at least one sub-pixel of red (R), first green (G1), blue (B), and second green (G2). Specifically, the deposition mask can be used to deposit the red (R) sub-pixel. Alternatively, the deposition mask can be used to deposit the blue (B) sub-pixel. Alternatively, the deposition mask can be used to simultaneously form the first green (G1) sub-pixel and the second green (G2) sub-pixel.

[0169] The pixel arrangement of an organic light-emitting display device can be configured in the order of "red R - first green G1 - blue B - second green G2". In this case, red R - first green G1 can form one pixel RG, and blue B - second green G2 can form another pixel BG. In an organic light-emitting display device with this arrangement, since the deposition spacing of the green light-emitting organic material is narrower than that of the red and blue light-emitting organic materials, a deposition mask as described in this invention may be required.

[0170] In the deposition mask according to the embodiment, the diameter of the vias is 20 μm or less, and the spacing between the vias is 32 μm or less, and therefore, OLED pixels with a resolution of 800 PPI can be deposited. That is, UHD resolution can be achieved using the deposition mask according to the embodiment.

[0171] The diameter of the vias and the spacing between them can be the dimensions used to form the green subpixels. The deposition mask can be an OLED deposition mask used to achieve ultra-high display pixel density.

[0172] Reference Figure 6c Describe respectively Figure 6a and Figure 6b The cross-section along the A-A' direction and the cross-section along the B-B' direction.

[0173] Figure 6c This is a view showing the various cross-sections, which are overlapped for description. Figure 6a and Figure 6b The height difference and dimensions between the cross-section along the A-A' direction and the cross-section along the B-B' direction.

[0174] First, the description Figure 6a and Figure 6b The cross-section along the A-A' direction. The A-A' direction is the cross-section that intersects the central region between the first through hole TH1 and the third through hole TH3, which are adjacent in the vertical direction. That is to say, the cross-section along the A-A' direction may not include the through holes.

[0175] The etched surface ES2 in the large surface aperture and the island portion IS, which serves as another surface of the unetched deposition mask, can be positioned in a cross-section along the A-A' direction. Therefore, the island portion IS can include a surface parallel to one of the unetched surfaces of the deposition mask. Alternatively, the island portion IS can include a surface that is the same as or parallel to another unetched surface of the deposition mask.

[0176] Next, we will describe Figure 6a and Figure 6b The cross-section along the B-B' direction. The B-B' direction is the cross-section that intersects the center of each of the first through-hole TH1 and the second through-hole TH2 that are adjacent in the horizontal direction. That is, the cross-section along the B-B' direction can include multiple through-holes.

[0177] A rib can be positioned between the third through hole TH3 and the fourth through hole TH4, which are adjacent in the direction B-B'. Another rib can be positioned between the fourth through hole TH4 and the fifth through hole, which is adjacent to the fourth through hole in the horizontal direction but positioned in the opposite direction to the third through hole TH3. A through hole can be positioned between the first rib and the second rib. In other words, a through hole can be positioned between two adjacent ribs in the horizontal direction.

[0178] In a cross-section along the B-B' direction, a rib RB can be positioned as a region in which the etched surface ES2 in a large surface hole connects to the etched surface ES2 in an adjacent large surface hole. Here, the rib RB can be a region that connects the boundaries of two adjacent large surface holes. Since the rib RB is an etched surface, it can have a smaller thickness than the island portion IS.

[0179] For example, the island-shaped portion can have a width of 2 μm or greater. That is, the width in the direction parallel to the other surface where the unetched portion remains on another surface can be 2 μm or less. When the width of one end of an island-shaped portion and the width of the other end are 2 μm or greater, the overall volume of the deposition mask can be increased. Deposition masks with this structure ensure sufficient stiffness to resist tensile forces applied to processes such as organic material deposition, and are therefore advantageous for maintaining the uniformity of vias.

[0180] Reference Figure 8 , will describe Figure 6a and Figure 6b The B-B' cross section and located according to Figure 6c The enlarged cross-section of the effective region ribs RB and the vias between these ribs. In the deposition mask of this embodiment, the thickness of the effective portion AA formed by etching the vias can be different from the thickness of the unetched ineffective portion UA. Specifically, the thickness of the ribs RB can be less than the thickness in the unetched ineffective portion UA.

[0181] In the deposition mask of this embodiment, the thickness of the non-effective portion can be greater than the thickness of the effective portion. For example, in the deposition mask of this embodiment, the maximum thickness of the non-effective portion or non-deposition region can be 30 μm or less. For example, in the deposition mask of this embodiment, the maximum thickness of the non-effective portion or non-deposition region can be 25 μm or less. For example, in the deposition mask of this embodiment, the maximum thickness of the non-effective portion or non-deposition region can be 15 μm to 25 μm. When the maximum thickness of the non-effective portion or non-deposition region of the deposition mask according to this embodiment is greater than 30 μm, it may be difficult to form vias with fine dimensions because the metal plate material is thicker. When the maximum thickness of the non-effective portion or non-deposition region of the deposition mask according to this embodiment is less than 15 μm, it may be difficult to form vias with uniform dimensions because the metal plate material is thinner.

[0182] The maximum thickness T3 measured at the center of the rib RB can be 15 μm or less. For example, the maximum thickness T3 measured at the center of the rib RB can be 7 μm to 10 μm. For example, the maximum thickness T3 measured at the center of the rib RB can be 6 μm to 9 μm. When the maximum thickness T3 measured at the center of the rib RB is greater than 15 μm, it may be difficult to form OLED deposition patterns with a high resolution of 500 PPI or greater. When the maximum thickness T3 measured at the center of the rib RB is less than 6 μm, it may be difficult to form deposition patterns uniformly.

[0183] The height H1 of the small surface apertures of the deposition mask can be 0.2 to 0.4 times the maximum thickness T3 measured at the center of the rib RB. For example, the maximum thickness T3 measured at the center of the rib RB can be 7 μm to 9 μm, and the height H1 between one surface of the deposition mask and the connecting portion can be 1.4 μm to 3 μm. The height H1 of the small surface apertures of the deposition mask can be 3.5 μm or less. For example, the height of the small surface apertures can be 0.1 μm to 3.2 μm. For example, the height of the small surface apertures of the deposition mask can be 0.5 μm to 3.5 μm. For example, the height of the small surface apertures of the deposition mask can be 2 μm to 3.2 μm. Here, the height can be measured along the thickness measurement direction of the deposition mask, i.e., along the depth direction, and the height can be the height measured from one surface of the deposition mask to the connecting portion. In detail, the height can be along the thickness measurement direction of the deposition mask, i.e., along the depth direction. Figure 4 , Figure 6a or Figure 6b The above-mentioned horizontal direction (x-direction) and vertical direction (y-direction) in the plane form a 90-degree z-axis direction measurement.

[0184] When the height between one surface of the deposition mask and the connected portion is greater than 3.5 μm, poor deposition may occur due to the following shadowing effect: in this shadowing effect, the deposited material diffuses into an area larger than the area of ​​the via during OLED deposition.

[0185] The aperture W1 at one surface of the small surface aperture V1 on which the deposition mask is formed and the aperture W2 at the connecting portion that serves as the boundary between the small surface aperture V1 and the large surface aperture V2 can be similar to or different from each other. The aperture W1 at one surface of the small surface aperture V1 on which the deposition mask is formed can be larger than the aperture W2 at the connecting portion.

[0186] For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion can be from 0.01 μm to 1.1 μm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion can be from 0.03 μm to 1.1 μm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion can be from 0.05 μm to 1.1 μm.

[0187] When the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion is greater than 1.1 μm, poor deposition may occur due to the shadowing effect.

[0188] The tilt angle of a small surface aperture, measured on one surface of the deposition mask, can be 89 degrees or less. The tilt angle of the small surface aperture may refer to the angle measured at rib RB. The tilt angle connecting one end E1 of the small surface aperture to one end E2 of the connecting portion between the small and large surface apertures can be 89 degrees or less relative to one surface of the deposition mask. For example, the tilt angle connecting one end E1 of the small surface aperture to one end E2 of the connecting portion between the small and large surface apertures can be between 75 and 89 degrees relative to one surface of the deposition mask. For example, the tilt angle connecting one end E1 of the small surface aperture to one end E2 of the connecting portion between the small and large surface apertures can be between 78 and 89 degrees relative to one surface of the deposition mask. For example, the tilt angle connecting one end E1 of the small surface aperture to one end E2 of the connecting portion between the small and large surface apertures can be between 85 and 89 degrees relative to one surface of the deposition mask.

[0189] In other words, the tilt angle can be defined as follows: The tilt angle of a large surface aperture can be an interior angle between a virtual first straight line corresponding to another flat surface of the deposition mask and a virtual second straight line connecting one end of the large surface aperture and one end of the connecting portion. Additionally, the tilt angle of a small surface aperture can be an interior angle between a virtual third straight line corresponding to another flat surface of the deposition mask and a virtual fourth straight line connecting one end of the small surface aperture and one end of the connecting portion.

[0190] Here, a small surface aperture V1 can be formed on one surface of the deposition mask, and a large surface aperture V2 can be formed on the other surface of the deposition mask. Additionally, one surface of the deposition mask serves as a reference for measuring the tilt angle of the small surface aperture, and the other surface of the deposition mask serves as a reference for measuring the tilt angle of the large surface aperture.

[0191] When the tilt angle connecting one end E1 of a small surface hole on one surface of the deposition mask to one end E2 of the connecting portion between the small and large surface holes exceeds 89 degrees, shading effects can be prevented, but problems may arise due to organic matter remaining in the through-holes during deposition. Therefore, it may be difficult to form a deposition pattern with uniform size.

[0192] When the tilt angle connecting one end E1 of a small surface hole on one surface of a deposition mask to one end E2 of the connecting portion between the small surface hole and the large surface hole is less than 70 degrees, poor deposition may occur due to the shadowing effect.

[0193] The tilt angle of the large surface aperture V2 can be 55 degrees or less. The tilt angle of the large surface aperture can refer to the angle measured at rib RB. The tilt angle connecting one end E3 of the large surface aperture V2 to one end E2 of the connecting portion between the small surface aperture and the large surface aperture can be 40 to 55 degrees relative to the other surface opposite to one surface of the deposition mask. Therefore, a high-resolution deposition pattern with 500 PPI or higher can be formed, and simultaneously, island-like portions can exist on the other surface of the deposition mask.

[0194] The tilt angle connecting one end E3 of the large surface aperture V2 to one end E2 of the connecting portion between the small surface aperture and the large surface aperture can be 45 to 55 degrees relative to the other surface opposite to the one surface of the deposition mask. Therefore, a deposition pattern with a high resolution of 800 PPI or higher can be formed, and simultaneously, island-like portions can exist on the other surface of the deposition mask.

[0195] Reference Figures 9 to 13 The steps for processing the metal plate used to manufacture the deposition mask according to the embodiment will be described.

[0196] Reference Figure 9 The following describes the rolling of a metal sheet. By passing the sheet between multiple rolls arranged above and below, the thickness of the metal sheet used to manufacture a deposition mask can be reduced. For example, the metal sheet of this embodiment can be thinner than the metal sheet before it was rolled by cold rolling.

[0197] Reference Figure 10 This section describes the cutting of rolled metal sheets. For ease of storage, the metal sheet used to manufacture the deposition mask can be rolled up. In this case, the direction in which the metal sheet is rolled, or the rolling direction, can be represented as RD, and the direction perpendicular to the rolling direction (the direction being rolled) can be represented as TD. The rolling direction of the metal sheet is the same as the longitudinal direction of the metal sheet. The rolled metal sheet can be cut to a length suitable for manufacturing the deposition mask.

[0198] Reference Figure 11 This describes the shape of grains on the surface of a rolled metal sheet. On the rolled metal sheet, grains can be stretched along the rolling direction RD. Therefore, the metal sheet can include striped textures along the rolling direction. Specifically, the surface of the rolled metal sheet can have striped irregularities formed along the rolling direction. That is, in the rolled metal sheet, components of the rolling texture are developed on the surface. Here, texture can refer to the selective arrangement of grains. For example, the surface of the rolled metal sheet can include texture components with repeating stripe shapes.

[0199] Here, the grain size may be non-uniform depending on the orientation. That is, the grain boundaries located on the surface of the rolled metal sheet may be anisotropic.

[0200] For example, the length r1 of the grain in the rolling direction RD can be greater than the length r2 of the grain in the direction TD perpendicular to the rolling direction. For example, the ratio of the length r1 of the grain in the rolling direction RD to the length r2 of the grain in the transverse direction TD perpendicular to the rolling direction can be 50:1 to 150:1. Specific grain sizes can vary depending on the recrystallization temperature, the thickness of the metal sheet, and the rolling process.

[0201] When forming through holes in a rolled metal sheet, the grain size deviation varies significantly between the rolling direction RD and the transverse direction TD, resulting in potentially different through hole diameters depending on the direction. In other words, the anisotropy of the grains may make it difficult to achieve uniform etching in both the rolling direction RD and the transverse direction TD.

[0202] Rolled metal sheets can have average centerline surface roughness Ra and average 10-point surface roughness Rz along the rolling direction RD that are less than those along the transverse direction TD. That is, the surface roughness can vary depending on whether the rolled metal sheet is along the rolling direction RD or the transverse direction TD. Here, the average centerline surface roughness Ra and average 10-point surface roughness Rz can be used as methods for measuring surface roughness. For example, since cold-rolled Invar metal sheets have average centerline surface roughness Ra and average 10-point surface roughness Rz along the rolling direction RD that are less than those along the transverse direction TD, the adhesion of the photoresist layer may vary depending on the direction. Therefore, when forming through-holes by depositing a patterned photoresist layer on the rolled metal sheet, it may be difficult to form through-holes with uniform apertures. In addition, due to the difference in adhesion of the photoresist layer depending on the direction, the photoresist layer may peel off, and therefore it may be difficult to manufacture a deposition mask including island-shaped portions with uniform area.

[0203] The grain shape can be altered due to surface treatments applied to the surface of rolled metal sheets. Surface treatments on rolled metal sheets can be performed by etching to reduce thickness and decrease grain anisotropy.

[0204] The surface of the rolled and surface-treated metal sheet may include protrusions of various shapes, such as circular, elliptical, rectangular, and random shapes. Among the multiple protrusions on the surface of the rolled and surface-treated metal sheet, the length r1 of the grain in the rolling direction RD may be the same as or different from the length r2 of the grain in the transverse direction TD.

[0205] When forming through-holes using a surface-treated metal sheet after rolling as described in this embodiment, since the grain size in the rolling direction RD and the grain size in the transverse direction TD are similar to each other, the diameter of the through-hole can be formed uniformly regardless of the direction. In other words, in order to solve the etching inhomogeneity due to the anisotropy of the grains, in this embodiment, the through-holes are formed using a surface-treated metal sheet, thereby improving the consistency of the shape and diameter of the through-holes and the consistency of the area of ​​the island-like portions.

[0206] In this embodiment, the rolled and surface-treated metal sheet can have values ​​within the following range: the average centerline surface roughness Ra in the rolling direction RD corresponds to the average centerline surface roughness Ra in the transverse direction TD.

[0207] In this embodiment, the rolled and surface-treated metal sheet can have values ​​within the following range: the average surface roughness Rz at 10 points along the rolling direction RD corresponds to the average surface roughness Rz at 10 points along the transverse direction TD. That is, in the rolled metal sheet, the range of surface roughness can be the same or similar regardless of whether it is along the rolling direction RD, the transverse direction TD, or the diagonal direction.

[0208] For example, although cold-rolled Invar sheet metal has average centerline surface roughness Ra and average 10-point surface roughness Rz values ​​smaller in the rolling direction RD than in the transverse direction TD, after surface treatment by etching, the Invar sheet metal can have average centerline surface roughness Ra and average 10-point surface roughness Rz values ​​within a predetermined range, independent of direction. Therefore, in the surface-treated sheet after rolling, the adhesion of the photoresist layer can be uniform and independent of direction. Thus, when forming through-holes by depositing a patterned photoresist layer on the surface-treated sheet after rolling and etching, through-holes with uniform apertures can be formed with high yield. Furthermore, since the adhesion of the photoresist layer can be uniform and independent of direction, photoresist layer delamination can be prevented, allowing the fabrication of deposition masks with island-like portions of uniform area. Therefore, the deposition mask made using the metal plate of the embodiment can form fine and consistent vias with high yield.

[0209] In a metal sheet, the average surface roughness along the centerline in the rolling direction RD, the average surface roughness along the centerline in the transverse direction TD, and the average surface roughness along the centerline in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be from 0.1 μm to 0.3 μm, respectively.

[0210] For example, in a metal sheet, the average centerline surface roughness along the rolling direction RD, the average centerline surface roughness along the transverse direction TD, and the average centerline surface roughness along the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be from 0.1 μm to 0.2 μm, respectively.

[0211] For example, in a metal sheet, the average surface roughness along the centerline in the rolling direction RD, the average surface roughness along the centerline in the transverse direction TD, and the average surface roughness along the centerline in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be from 0.1 μm to 0.15 μm, respectively.

[0212] In a metal sheet, the average surface roughness of 10 points along the rolling direction RD, the average surface roughness of 10 points along the transverse direction TD, and the average surface roughness of 10 points along the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be from 0.5 μm to 2.0 μm, respectively.

[0213] For example, on a metal plate, the average surface roughness of 10 points on the rolling direction RD, the average surface roughness of 10 points on the transverse direction TD, and the average surface roughness of 10 points on the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be from 0.5 μm to 1.5 μm, respectively.

[0214] For example, on a metal plate, the average surface roughness of 10 points on the rolling direction RD, the average surface roughness of 10 points on the transverse direction TD, and the average surface roughness of 10 points on the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be from 0.5 μm to 1.0 μm, respectively.

[0215] Figure 12 and Figure 13 These are SEM images of metal sheets with a predetermined thickness after rolling and annealing.

[0216] Figure 12 This is a SEM image of the first test piece of Invar steel, which has been rolled and annealed, magnified 5,000 times.

[0217] Figure 13 This is a SEM image of the second test piece of Invar steel, which has been rolled and annealed, magnified 5,000 times.

[0218] The surface roughness of rolled and annealed Invar steel prior to surface treatment can have the following values. In the first and second test specimens, the centerline average surface roughness (average centerline surface roughness Ra over the entire region), measured over the entire region having a first horizontal length and a second vertical length, can be from 0.06 μm to 0.1 μm. In the first and second test specimens, the 10-point average surface roughness (average 10-point average surface roughness Rz over the entire region), measured over the entire region having a first horizontal length and a second vertical length, can be from 0.8 μm to 1.5 μm.

[0219] The following steps will be described next: Prepare as follows Figure 14 The test piece shown is a rolled and annealed metal sheet BM, which is then etched and processed as follows. Figure 15 and Figure 16 The test piece shown.

[0220] The predetermined thickness T0 of the rolled and annealed metal sheet BM can be 30 μm or greater. For example, the predetermined thickness T0 of the rolled and annealed metal sheet BM can be 25 μm or greater.

[0221] One and / or both sides of a metal sheet can be etched to produce a metal sheet with a thickness T1 that is thinner than a predetermined thickness T0. After rolling and annealing, the thickness of the metal sheet that has undergone the etching step can be 20 μm to 30 μm. A rolled and annealed metal sheet with a predetermined thickness of 30 μm or greater can have a thickness T1 of 20 μm to 30 μm through an etching step on the surface of the metal sheet.

[0222] A rolled and annealed metal sheet having a predetermined thickness T0 of 25 μm or greater can have a thickness T1 of 15 μm to 25 μm by an etching step. Here, etching can include electro-etching or chemical etching.

[0223] The thickness T1 of the metal plate after the etching step can be 60% to 90% of the predetermined thickness T0 of the metal plate. Preferably, the thickness T1 of the metal plate after the etching step can be 70% to 80% of the predetermined thickness T0 of the metal plate.

[0224] Figure 15 and Figure 16 These are SEM images of the non-deposition areas of the deposition mask according to the implementation method.

[0225] Figure 15 yes Figure 11 The SEM image of the first test piece, in which the deviation in surface roughness was improved after a surface treatment involving etching of rolled and annealed Invar steel, was magnified 5,000 times. Figure 16 yes Figure 12 The SEM image of the second test piece, in which the deviation in surface roughness was improved after surface treatment by etching the rolled and annealed Invar steel, was magnified 5,000 times.

[0226] The surface roughness of etched Invar steel after rolling and annealing can have the following values. In the first test piece, the centerline average surface roughness (average centerline average surface roughness over the entire region), measured over the entire region having a first horizontal length and a second vertical length, can be 0.14 μm to 0.15 μm. In the second test piece, the centerline average surface roughness (average centerline average surface roughness over the entire region), measured over the entire region having a first horizontal length and a second vertical length, can be 0.14 μm to 0.15 μm.

[0227] In the first test piece, the 10-point average surface roughness (10-point average surface roughness over the entire area) measured over the entire area having a first horizontal length and a second vertical length can be from 3.8 μm to 4.5 μm.

[0228] In the second test piece, the 10-point average surface roughness (10-point average surface roughness over the entire area) measured over the entire area having a first horizontal length and a second vertical length can be between 3.8 μm and 4.5 μm.

[0229] Reference Figure 14 and Figure 17 The manufacturing process of the deposition mask according to the embodiments will be described.

[0230] In a method for producing a metal material deposition mask for OLED pixel deposition, the deposition mask can be manufactured by the following steps: a first step, preparing a metal plate for rolling and annealing and having a predetermined thickness, wherein the average centerline surface roughness and the average 10-point surface roughness in the rolling direction are less than the average centerline surface roughness and the average 10-point surface roughness in the transverse direction; a second step, etching the metal plate to a thickness thinner than the predetermined thickness, such that the average centerline surface roughness in the rolling direction and the average centerline surface roughness in the transverse direction are in the range of 0.1 μm to 0.3 μm, and the average 10-point surface roughness in the rolling direction and the average 10-point surface roughness in the transverse direction are in the range of 0.5 μm to 2.0 μm, respectively; and a third step, forming a plurality of large surface holes, a plurality of small surface holes, and a plurality of through holes formed by the large surface holes and small surface holes by coating a patterned photoresist layer on the surface of the metal plate, developing the patterned photoresist layer, and etching the metal plate.

[0231] First, refer to Figure 14 The first step describes the preparation of a metal sheet BM with a predetermined thickness T0 for rolling and annealing.

[0232] Here, rolling can include cold rolling. Annealing can include continuous annealing.

[0233] The base metal sheet BM can contain metallic materials. The base metal sheet BM can contain a nickel alloy. For example, the base metal sheet BM can be an alloy of nickel and iron. In this case, nickel can be about 35% to 37% by weight, and iron can be about 63% to 65% by weight. For example, the base metal sheet BM can contain Invar, which contains about 35% to 37% by weight of nickel, about 63% to 65% by weight of iron, and trace amounts of at least one of C, Si, S, P, Cr, Mo, Mn, Ti, Co, Cu, Fe, Ag, Nb, V, In, and Sb. Here, "trace amount" may mean no more than 1% by weight. Specifically, here, "trace amount" may refer to 0.5% by weight or less. However, the base metal sheet BM is not limited to this and can obviously contain a variety of metallic materials.

[0234] Nickel alloys such as Invar have a small coefficient of thermal expansion, which has the advantage of increasing the lifespan of deposition masks.

[0235] In the metal sheet prepared in the first step, the average centerline surface roughness Ra and the average 10-point surface roughness Rz on the rolling direction RD are less than the average centerline surface roughness Ra and the average 10-point surface roughness Rz on the transverse direction TD.

[0236] Next, we will refer to Figure 14 The second step describes etching a metal plate to a thickness thinner than a predetermined thickness.

[0237] One and / or both sides of the metal sheet can be etched to produce a metal sheet with a thickness T1 that is thinner than a predetermined thickness T0. That is, the second step may include isotropic etching of the rolled and annealed metal sheet.

[0238] The metal plate that has undergone the second step may include the following steps: etching the metal plate to a thickness thinner than a predetermined thickness, such that the average centerline surface roughness Ra on the rolling direction RD and the average centerline surface roughness Ra on the transverse direction TD are both in the range of 0.1 μm to 0.3 μm, and the average 10-point average surface roughness Rz on the rolling direction RD and the average 10-point average surface roughness Rz on the transverse direction TD are both in the range of 0.5 μm to 2.0 μm. The rolling direction RD is the longitudinal direction of the deposition mask. The transverse direction TD is the lateral direction perpendicular to the longitudinal direction of the deposition mask.

[0239] Optionally, the metal plate BM may include the step of forming an etching control layer.

[0240] For example, there is a problem with uniform etching of nickel alloys such as Invar. That is, in nickel alloys such as Invar, the etching rate increases in the initial stage of etching. Therefore, there is a problem that the etching factor for small surface holes may decrease. When the etching factor for small surface holes decreases, the following problems may occur: poor deposition mask formation may result due to shading effects. Alternatively, photoresist layer stripping may occur due to side etching of large surface holes. Furthermore, as the via size increases, it may become difficult to form vias with fine dimensions. In addition, non-uniform via formation reduces the yield of the deposition mask.

[0241] Therefore, in embodiments, the etching control layer for surface modification can be disposed on the surface of the base metal plate with different compositions, contents, crystal structures, and erosion rates. Here, surface modification can refer to layers made of various materials disposed on the surface to improve the etching factor.

[0242] In other words, the etch control layer can be an etch barrier layer with an etch rate lower than that of the metal plate. The etch control layer can have different crystal planes and crystal structures than the metal layer. For example, because the etch control layer contains elements different from those in the metal layer, its crystal planes and crystal structures can be different from each other.

[0243] In the same etching environment, the etching control layer can have an etching potential different from that of the base metal plate. For example, when the same etchant is applied at the same temperature for the same duration, the etching control layer can have a different etching current or etching potential than the base metal plate.

[0244] The metal plate BM may include an etching control layer on one and / or both surfaces, the entire surface, and / or the effective area of ​​the metal plate BM. The etching control layer may contain elements different from those in the metal plate, or may contain a higher concentration of metallic elements with slow erosion rates than the metal plate.

[0245] For example, the etching control layer may contain at least one metal selected from nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al), and alloys thereof, and the content of at least one metal selected from nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al), and alloys thereof may be greater than the content of these metals contained in the base metal plate. Preferably, the etching control layer may contain nickel (Ni). That is, after the second step, the third step is performed after further performing the step of forming a nickel deposition layer with a submicron thickness on a metal plate having a thickness thinner than a predetermined thickness.

[0246] In cases where a surface treatment step is further included, an etching control layer can be formed on the surface of the metal plate according to the embodiment. In the surface treatment step, an etching control layer of a different element from the metal plate BM is formed, such that the erosion rate on the surface can be lower than the erosion rate of the raw material of the metal plate BM. Therefore, the etch factor of the deposition mask according to the embodiment can be increased. Furthermore, since the deposition mask according to the embodiment can uniformly form multiple vias, the deposition efficiency of the R, G, and B patterns can be improved. Here, including different elements can mean that the metal plate BM and the etching control layer contain at least one different element, or that even if all elements are the same, they contain alloys with different contents.

[0247] Next, we will refer to Figure 17 The third step in forming multiple through holes is described.

[0248] The steps for setting a patterned photoresist layer P1 on one surface of a metal plate will be described. The patterned photoresist layer P1 can be applied to one surface of a base metal plate and developed to form small surface holes. An etch-blocking layer, such as a coating or film, for preventing etching can be set on another surface opposite to one surface of the base metal plate.

[0249] Next, the steps of forming a groove on a surface of a metal plate by half-etching the opening portion of the photoresist layer P1 will be described.

[0250] The opening portion of the photoresist layer P1 can be exposed to etchants, etc., and therefore etching can occur in the opening portion of a surface of the metal plate where the photoresist layer P1 is not provided.

[0251] For example, a metal plate with a thickness T1 of 20 μm to 30 μm can be etched until a groove with a thickness of approximately half the thickness of the metal plate is formed. Specifically, small surface holes can be formed by half-etching. The depth of the groove formed by half-etching can be approximately 10 μm to 15 μm.

[0252] For example, a metal plate with a thickness T1 of 15 μm to 25 μm can be etched until a groove with a thickness of approximately half the thickness of the metal plate is formed. Specifically, small surface holes can be formed by half-etching. The depth of the groove formed by half-etching can be approximately 7.5 μm to 12.5 μm.

[0253] The step of forming a groove on a surface of a metal plate can be anisotropic etching or a semi-additive process (SAP). Therefore, in a groove formed by semi-etching, the etching rate in the depth direction (b direction) can be faster than that in isotropic etching (a direction).

[0254] The etch factor for small surface holes can be between 2.0 and 3.0. For example, the etch factor for small surface holes can be between 2.1 and 3.0. For example, the etch factor for small surface holes can be between 2.2 and 3.0.

[0255] Here, the etching factor can be the depth B of the etched small surface hole divided by the width A of the photoresist layer extending from the island-like portion on the small surface hole and protruding toward the center of the via (etch factor = B / A). A can represent the average of the width of one side of the photoresist layer protruding on a surface hole and the width of the opposite side.

[0256] Next, the steps of setting a patterned photoresist layer P2 on a surface opposite to the one surface of the base metal plate will be described. The patterned photoresist layer P2 with openings can be set on the surface opposite to the one surface of the base metal plate to form large surface holes. An etch-blocking layer, such as a coating or film, can be set on one surface of the base metal plate to prevent etching.

[0257] The openings in the photoresist layer P2 can be exposed to the etchant, and therefore etching can occur in the openings on the other surface of the metal plate where the photoresist layer P1 is not located. This other surface of the metal plate can be etched using either anisotropic or isotropic etching.

[0258] The opening portion of the photoresist layer is etched, and thus a groove on one surface of the metal plate can be connected to a large surface hole to form a through-hole.

[0259] In the third step, 1) a patterned photoresist layer P1 is disposed on one surface of the metal plate, and a patterned photoresist layer P2 is disposed on the other surface of the metal plate. Then, 2) a via can be formed by simultaneously etching one surface and the other surface of the metal plate.

[0260] Alternatively, in the third step, 1) a patterned photoresist layer P1 can be disposed on one surface of the metal plate, and 2) a groove can be formed on only one surface of the metal plate by half-etching the opening portion of the photoresist layer P1. Then, 3) a patterned photoresist layer P2 can be disposed on another surface of the metal plate. Then, 4) a via can be formed on another surface of the metal plate by etching the opening portion of the photoresist layer P2.

[0261] Alternatively, in the second step, 1) a patterned photoresist layer P2 can be disposed on another surface of the metal plate, and 2) a large surface hole can be formed on only the other surface of the metal plate by etching the opening portion of the photoresist layer P2. Then, 3) a patterned photoresist layer P1 can be disposed on one surface of the metal plate. Then, 4) a through-hole connected to the large surface hole can be formed on one surface of the metal plate by half-etching the opening portion of the photoresist layer P1.

[0262] Next, the photoresist layer is removed, and the deposition mask can be formed by a third step of forming multiple large surface holes, multiple small surface holes, and multiple vias formed by the large and small surface holes. For example, the vias can be formed by anisotropic etching.

[0263] The plurality of large surface holes are simultaneously formed on one surface, the plurality of small surface holes are simultaneously formed on another surface opposite to the one surface, and the plurality of through holes are simultaneously formed through a connecting portion, the boundary between the large surface holes and the small surface holes is connected to the connecting portion, and thus, a deposition mask can be manufactured.

[0264] The deposition mask may contain the same material as the metal plate. For example, the deposition mask may include a material having the same composition as the metal plate. For example, the island-shaped portions of the deposition mask may include the aforementioned etching control layer. Specifically, the surface of the island-shaped portions or non-deposition areas of the deposition mask may include a nickel deposition layer. That is, nickel may remain on the surface of the non-deposition areas or on the unetched island-shaped portions of the metal plate.

[0265] In the deposition mask, the maximum thickness at the center of the island-shaped portion can be less than the maximum thickness T1 of the non-depositional region that is not etched, to form a semi-etched portion. For example, the maximum thickness at the center of the island-shaped portion can be less than 15 μm. For example, the maximum thickness at the center of the island-shaped portion can be less than 10 μm. However, the maximum thickness T1 of the non-depositional region of the deposition mask can be 20 μm to 30 μm or 15 μm to 25 μm. The maximum thickness of the non-depositional region of the deposition mask can be equal to the thickness of the metal plate prepared in the second step. Since the surfaces of the ineffective and effective portions are completely etched in the second step, the thickness of the ineffective portion can be less than the predetermined thickness measured in the first step of the metal plate.

[0266] To fabricate high-resolution deposition masks with UHD and QHD resolutions, thin metal sheets are required. Therefore, metal sheets rolled to have a relatively thin thickness can be used to fabricate deposition masks. However, it has been determined that the uniformity of vias is reduced in deposition masks fabricated using this method. That is, the density of vias becomes higher due to the need for high resolution, and therefore requires the formation of vias with fine and uniform dimensions.

[0267] The inventors of this invention have determined surface characteristics to identify the problem of reduced uniformity in through-holes of rolled metal sheets, and therefore determined that the rolled metal sheets have different surface roughness values ​​in the rolling direction and the transverse direction. Since the surface roughness of the rolled metal sheet is a factor determining the adhesion of the photoresist layer, it can be determined that uniformity is reduced when through-holes are fabricated directly using the rolled metal sheet. In other words, when using the rolled metal sheet to fabricate a deposition mask, it can be determined that uniform through-holes are not formed because the etching rate is higher in a particular direction.

[0268] Therefore, after performing a processing step to control the surface roughness of the rolled metal sheet within a predetermined range, the inventors of the present invention obtained a deposition mask including through holes with uniform size and a method for manufacturing the same.

[0269] When the roughness is reduced to a predetermined range or smaller by etching as a surface treatment, the adhesion of the photoresist layer may be reduced. In addition, when the metal plate is etched to a thickness of 10 μm to 12 μm, the following problem exists: when the deposition mask is pulled out, structural deformation occurs due to low rigidity.

[0270] Therefore, the deposition mask according to the embodiment has a thickness of 20 μm to 30 μm or 15 μm to 25 μm in the portion of the non-deposition region where no half-etched portion is formed. The average centerline surface roughness in the longitudinal direction and the average centerline surface roughness in the lateral direction of the non-deposition region are 0.1 μm to 0.3 μm, the average 10-point surface roughness in the longitudinal direction and the average 10-point surface roughness in the lateral direction are 0.5 μm to 2.0 μm, the value of the average centerline surface roughness Ra(RD) in the longitudinal direction deviates from the average centerline surface roughness Ra(TD) in the lateral direction by less than 50%, and the value of the average 10-point surface roughness Rz(RD) in the longitudinal direction deviates from the average 10-point surface roughness Rz(TD) in the lateral direction by less than 50%.

[0271] This allows for the fabrication of deposition masks that include finely perforated holes of uniform size.

[0272] The deposition mask according to the embodiment can be used to deposit OLED pixels with high resolution of 500 PPI or higher and 800 PPI or higher in high yield. Additionally, the consistency and accuracy of the position between vias and OLED patterns can be improved.

[0273] The invention will be described in more detail below with reference to examples and comparative examples. These examples are merely exemplary to illustrate the invention in more detail. Therefore, the invention is not limited to these examples.

[0274] In the comparative example, the metal sheet was rolled and annealed. In the example, the surface of the rolled and annealed metal sheet was treated with a ferric chloride-based acidic etchant.

[0275] <Experimental Example 1: SEM Measurement Results>

[0276] Figure 15 and Figure 16 SEM images of the surface of an acid-treated metal sheet after rolling and annealing, according to an example, are shown.

[0277] Reference Figure 15 and Figure 16 It can be seen that on the surface of the example metal sheet, the stripe shape in the rolling direction disappears or decreases. It can also be seen that the grains on the surface of the metal sheet are arranged in the same or different directions. In other words, it can be seen that the grains on the surface of the metal sheet are arranged in random directions.

[0278] Figure 12 and Figure 13 SEM images of the surface of an Invar sheet after rolling and annealing, based on a comparative example, are shown.

[0279] Reference Figure 21 It can be determined that the surface of the metal plate in the comparative example has striped grains in the rolling direction.

[0280] In this embodiment, the surface of the metal plate can be processed to have orientation-independent grains through surface treatment. In the experimental example, only acidic etchants are described, but it goes without saying that alkaline etchants can also be used.

[0281] <Experimental Example 2: Measurement Results of Ra and Rz in the RD, TD, and Diagonal Directions>

[0282] Example roughness measurement results—these roughness measurements were obtained using a roughness measuring device (NanoView, manufacturer: Nanosystem, product name: NV-E1000)—results in Figure 18 The roughness measurement results are shown in Tables 1 and 2, and the comparison examples are in... Figure 21 As shown in Tables 3 and 4.

[0283] The average centerline average surface roughness Ra and the average 10-point average surface roughness Rz in the example were measured in a region of the test piece with a first horizontal length and a second vertical length, and the average values ​​measured by multiple lines (line 1 to line 40) in the lateral direction, longitudinal direction, first diagonal direction and second diagonal direction are shown respectively.

[0284] Table 1 shows the individual values ​​and average values ​​of the average centerline average surface roughness Ra and the average 10-point average surface roughness Rz, measured by ten lines in the lateral and longitudinal directions, respectively.

[0285] Table 2 shows the individual values ​​and average values ​​of the average centerline average surface roughness Ra and the average 10-point average surface roughness Rz, measured by ten lines in the first and second diagonal directions respectively.

[0286] |RD-TD| / TD*100(%) is the calculated value of the deviation ratio (%) between RD and TD.

[0287] [Table 1]

[0288]

[0289]

[0290] [Table 2]

[0291]

[0292]

[0293] The average centerline average surface roughness Ra and the average 10-point average surface roughness Rz in the comparative example were measured in a region of the test piece with a first horizontal length and a second vertical length, and the average values ​​measured by multiple lines (line 1 to line 40) in the lateral direction, longitudinal direction, first diagonal direction and second diagonal direction are shown respectively.

[0294] Table 3 shows the individual values ​​and average values ​​of the average centerline average surface roughness Ra and the average 10-point average surface roughness Rz, measured by ten lines in the lateral and longitudinal directions respectively, using comparative examples.

[0295] Table 4 shows the individual values ​​and average values ​​of the average centerline average surface roughness Ra and the average 10-point average surface roughness Rz measured by ten lines in the first and second diagonal directions, respectively, using the comparative example.

[0296] |RD-TD| / TD*100(%) is the calculated value of the deviation ratio (%) between RD and TD.

[0297] [Table 3]

[0298]

[0299]

[0300] [Table 4]

[0301]

[0302]

[0303] In the metal sheet according to the example, it is determined that the average surface roughness Ra of the average centerline on the rolling direction RD and the transverse direction TD is 0.1 μm to 0.3 μm.

[0304] In the example metal sheet, it is determined that the average surface roughness Rz at 10 points on the rolling direction RD and the transverse direction TD is between 0.5 μm and 2.0 μm. That is, in the example, it is determined that, regardless of the orientation, the metal sheet has the same or similar range of roughness values ​​for the same roughness evaluation item.

[0305] In this case, the lengths in the first horizontal direction and the lengths in the second vertical direction can correspond to each other or can be different from each other.

[0306] Specifically, after setting the roughness measuring device to a magnification of 20x, any point on the metal plate can be selected, and the surface roughness can be measured in an area of ​​232μm*309μm.

[0307] The specific method for measuring surface roughness in the example is to measure the surface roughness along arbitrary straight lines in the TD and RD directions within a region having a length in a first horizontal direction and a length in a second vertical direction, wherein the length of the straight line can be the same as the length in the first horizontal direction or the length in the second vertical direction. The example shows the values ​​of Ra and Rz measured at arbitrary points on a metal test piece after surface treatment, based on arbitrary straight lines in the longitudinal, diagonal, and lateral directions, and shows the average derived values ​​obtained by measuring Ra and Rz along 10 straight lines in the TD direction, 10 straight lines in the RD direction, 10 straight lines in the 45-degree direction, and 10 straight lines in the -45-degree direction, respectively, by changing the position.

[0308] The comparative examples show the values ​​of Ra and Rz measured at any point on a metal test piece prior to surface treatment, based on arbitrary straight lines in the longitudinal, diagonal, and lateral directions. The average derived values ​​are shown by measuring Ra and Rz on 10 straight lines in the TD direction, 10 straight lines in the RD direction, 10 straight lines in the 45-degree direction, and 10 straight lines in the -45-degree direction, respectively, by changing the position.

[0309] In the metal sheet according to the comparative example, the average surface roughness Ra along the centerline in the rolling direction RD is determined to be 0.0431 μm, and the average surface roughness Ra along the centerline in the transverse direction TD is determined to be 0.103 μm. In the metal sheet according to the comparative example, the average surface roughness Rz at 10 points along the rolling direction RD is determined to be 0.1862 μm, and the average surface roughness Rz at 10 points in the transverse direction TD is determined to be 0.4222 μm. That is, in the comparative example, the average surface roughness along the centerline is determined to vary depending on the direction. Furthermore, in the comparative example, the average surface roughness at 10 points is determined to vary depending on the direction.

[0310] In the example case, the overall average centerline surface roughness measured in the 232μm*309μm region is 0.14μm to 0.15μm, and the overall average 10-point surface roughness measured in the 232μm*309μm region is 3.8μm to 4.5μm. On the other hand, in the comparative example, the overall average centerline surface roughness measured in the 232μm*309μm region is 0.06μm to 0.1μm, and the overall average 10-point surface roughness measured in the 232μm*309μm region is 0.8μm to 1.5μm.

[0311] Therefore, it is assumed that adhesion is improved when surface roughness increases. However, before obtaining an example, the etched shape was evaluated using test pieces with a total average centerline surface roughness of 0.05 μm to 0.5 μm measured in a 232 μm × 309 μm region and a total average 10-point surface roughness of 1.0 μm to 3.0 μm measured in a 232 μm × 309 μm region, but the expected shape did not appear.

[0312] As a result of the inspection, the average surface roughness of the entire 232μm*309μm region increased, but undesirable etched shapes appeared due to the deviation of surface roughness in the longitudinal direction (rolling direction) and the lateral direction (transverse direction). Based on this, an example of the present invention can be obtained.

[0313] Furthermore, it can be seen that the value of the average centerline surface roughness Ra(RD) in the longitudinal direction of the non-deposition region or island-shaped portion of the deposition mask according to this embodiment deviates by less than 50% from the average centerline surface roughness Ra(TD) in the lateral direction, and the value of the average 10-point average surface roughness Rz(RD) in the longitudinal direction deviates by less than 50% from the average 10-point average surface roughness Rz(TD) in the lateral direction. More specifically, it can be seen that the value of the average centerline surface roughness Ra(RD) in the longitudinal direction of the non-deposition region or island-shaped portion of the deposition mask according to this embodiment deviates by 30% or less from the average centerline average surface roughness Ra(TD) in the lateral direction, and the value of the average 10-point average surface roughness Rz(RD) in the longitudinal direction deviates by 30% or less from the average 10-point average surface roughness Rz(TD) in the lateral direction. More specifically, it can be seen that the value of the average centerline average surface roughness Ra(RD) in the longitudinal direction of the non-deposition area or island portion of the deposition mask according to this embodiment deviates by 15% or less from the average centerline average surface roughness Ra(TD) in the transverse direction, and the value of the average 10-point average surface roughness Rz(RD) in the longitudinal direction deviates by 15% or less from the average 10-point average surface roughness Rz(TD) in the lateral direction.

[0314] On the other hand, in the test piece of the metal plate according to the comparative example, it can be seen that the value of the average centerline surface roughness Ra (RD) in the longitudinal direction deviates by more than 50% from the average centerline surface roughness Ra (TD) in the lateral direction, and the value of the average 10-point average surface roughness Rz (RD) in the longitudinal direction deviates by more than 50% from the average 10-point average surface roughness Rz (TD) in the lateral direction.

[0315] <Experimental Example 3: Measurement of the adhesion of photoresist layers in the RD and TD directions>

[0316] Figure 19 This is a graph illustrating the correlation between surface roughness of the metal plate and the adhesion of the photoresist layer according to an example. In the example, since the roughness at the surface of the metal plate has a constant value regardless of direction, the adhesion of the photoresist layer can be constant.

[0317] Figure 22 This is a graph illustrating the correlation between surface roughness of the metal plate and the adhesion of the photoresist layer according to a comparative example. In the comparative example, the adhesion of the photoresist layer is uneven because the roughness varies with the surface of the metal plate according to the direction. Therefore, the photoresist layer can be lifted or peeled off.

[0318] An etched surface is formed to evaluate the etching characteristics of the metal plates in the above examples and comparative examples.

[0319] <Experimental Example 4: Shape of the etched surface based on the example and comparison example>

[0320] It shows a photograph of the shape of the etched surface after metal plates according to the example and comparative example have been prepared and etched to form large surface holes. At this point, the large surface holes may have already been formed by semi-etching.

[0321] Figure 20 This is a photograph showing a half-etched shape of one surface of a metal plate to evaluate the shape of the island portion IS of a deposition mask manufactured according to the example method. In the deposition mask formed by the example manufacturing method, the shapes of the vias and island portions can be uniform.

[0322] Figure 23 This is a photograph showing a half-etched shape of one surface of a metal plate to evaluate the shape of the island portion IS in a deposition mask fabricated using the metal plate of the comparative example. In the deposition mask formed by the fabrication method based on the comparative example, the boundary between the island portion and the via may be unclear. Therefore, it may be difficult to fabricate a deposition mask with vias of uniform size.

[0323] Meanwhile, the deposition mask used to achieve the high-resolution pattern described above requires a metal plate of 30 μm or smaller, and due to the increased PPI value to be achieved, a thinner metal plate and more precise vias are required.

[0324] Typically, metal sheets are manufactured through a rolling process and can have a rectangular shape including a major axis and a minor axis. Metal sheets may contain residual stress due to the rolling process, and the residual stress included in the metal sheet increases with the force applied during rolling.

[0325] Due to residual stress, warping (wave deformation) may occur in the metal sheet, and the residual stress in the metal sheet increases as the thickness of the metal sheet decreases to achieve high resolution.

[0326] Due to residual stress, the size and location of vias formed on the metal plate may be non-uniform. Therefore, poor deposition may occur when using a metal plate to fabricate a deposition mask.

[0327] Furthermore, when using metal plates to fabricate deposition masks, misalignment may occur due to mask warping. Specifically, during organic material deposition, the deposition mask may be placed within the deposition equipment. In this case, mask warping may reduce adhesion to the substrate. Consequently, the organic material may not be deposited uniformly on the substrate, and adjacent organic materials may mix, leading to poor deposition.

[0328] To prevent this, the residual stress of the base metal plate, which serves as the base material for the metal sheet, can be measured beforehand. Specifically, a sample metal sheet can be fabricated using the base metal plate to measure the residual stress and to understand the residual stress characteristics of the base metal plate.

[0329] The following will describe a metal plate according to an embodiment and a method for measuring the residual stress of the metal plate.

[0330] Figure 24 This is a view showing the metal plate, which serves as the raw material for the deposition mask, already wound up.

[0331] Reference Figure 24The metal plate 10 according to the embodiment may contain a metallic material. For example, the metal plate 10 may contain nickel (Ni). More specifically, the metal plate 10 may contain iron (Fe) and nickel (Ni). More specifically, the metal plate 10 may contain iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). In addition, the metal plate 10 may also contain small amounts of at least one element selected from carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). Invar is an alloy containing iron and nickel and is a low thermal expansion alloy with a coefficient of thermal expansion close to zero. That is, because Invar has a very small coefficient of thermal expansion, it can be used for precision components, such as masks and precision equipment. Therefore, deposition masks manufactured using the metal plate 10 can have improved reliability, thereby preventing deformation and increasing lifespan.

[0332] The metal plate 10 may contain about 60% to about 65% by weight of iron and about 35% to about 40% by weight of nickel. Specifically, the metal plate 10 may contain about 63.5% to about 64.5% by weight of iron and about 35.5% to about 36.5% by weight of nickel. Additionally, the metal plate 10 may contain about 1% by weight or less of at least one element selected from carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). The composition, content, and weight percentage of the metal plate 10 can be determined by methods such as selecting a specific region a*b on the plane of the metal plate 10 to detect the weight percentage of each component, sampling a test piece (a*b*t) corresponding to the thickness t of the metal plate 10, and dissolving the test piece in a strong acid. However, the embodiments are not limited to these methods, and the content can be determined by various other methods.

[0333] The metal sheet 10 can be manufactured by cold rolling. For example, the metal sheet 10 can be formed by melting, forging, hot rolling, normalizing, first cold rolling, first annealing, second cold rolling, and second annealing, and can have a thickness of about 30 μm or less through the above processes. Alternatively, after the above processes, the thickness of the metal sheet 10 can be about 30 μm or less through an additional thickness reduction process.

[0334] Metal plate 10 can be as Figure 24 As shown, the metal sheet 10 can be wound as described. For example, the metal sheet 10 can be manufactured by cold rolling, and the manufactured metal sheet 10 can be wound using winding rolls or the like. In detail, the deposition mask 100 can be manufactured by a roll-to-roll process, and the metal sheet 10 can be continuously supplied using wound metal sheets 10.

[0335] The metal sheet 10 can have a quadrilateral shape. For example, the metal sheet 10 can have a rectangular shape including a major axis and a minor axis. In detail, the metal sheet 10 can have a first direction as the rolling direction RD, and can have a second direction as a transverse direction TD intersecting the rolling direction. The first direction can correspond to the major axis direction of the metal sheet, and the second direction can correspond to the minor axis direction of the metal sheet.

[0336] When the metal sheet 10 is manufactured by a rolling process, warping may occur in the metal sheet 10. Specifically, the metal sheet 10 may include internal stress during the rolling process, and warping may occur in the metal sheet 10 due to internal stress, i.e., residual stress.

[0337] The aforementioned residual stress may be a significant factor when manufacturing the deposition mask 100 using the metal plate 10. Therefore, it may be desirable to measure the residual stress of the metal plate 10 before manufacturing the deposition mask 100. Specifically, residual stress can cause defects such as warping in the metal plate 10, and these defects can lead to problems in the manufactured deposition mask 100. Therefore, it may be desirable to measure the residual stress of the metal plate 10 in advance.

[0338] Figure 25 This is a diagram illustrating a method for measuring the residual stress of a metal plate according to a comparative example. First, refer to... Figure 25 Describe the comparison example.

[0339] Reference Figure 25 A sample metal plate 15 extracted from a metal plate can be prepared to measure the residual stress of the metal plate. The sample metal plate 15 may have a major axis and a minor axis, and the sample metal plate 15 can be manufactured by etching a region other than the area within a predetermined distance from both ends in the direction of the major axis. Etching is a partial etching of one surface of the sample metal plate 15, and the partial etching can be performed until the thickness of one surface of the sample metal plate 15 becomes approximately 30% to 70% of the total thickness of the sample metal plate 15.

[0340] Subsequently, the sample metal plate 15 can be placed on a horizontal worktable to measure the residual stress. In this case, the sample metal plate 15 placed on the horizontal worktable can be as follows: Figure 25 As in (b), it is positioned facing the upper surface of the horizontal worktable.

[0341] As described above, in the sample metal plate 15 placed on a horizontal worktable, warping (wave deformation) may occur due to internal stress, and residual stress can be calculated based on data obtained by measuring the warping. However, when the metal plate is thin, it may not be possible to accurately measure the residual stress using the above method. For example, a deposition mask for achieving a high-resolution pattern of 400 PPI or higher may be fabricated using a metal plate with a thickness of about 30 μm or less, and the side surface of the metal plate with the thickness described above may not be placed parallel to the horizontal worktable. That is, when the metal plate is thin, it may be difficult to stand the metal plate upright on the horizontal worktable due to its thickness, and therefore it may not be possible to measure the residual stress.

[0342] In other words, conventionally, a sample metal plate is manufactured by partially etching the areas at both ends of one surface of the sample metal plate, excluding certain regions. The sample metal plate is then placed on a flat, horizontal worktable, and its warpage is measured to determine its residual stress. However, in such a sample metal plate, the two end regions in the longitudinal direction remain unetched. Furthermore, due to the aforementioned reasons, when the sample metal plate is placed on a flat, horizontal worktable, all four vertices are not etched and therefore not raised, making it difficult to measure the residual stress in the horizontal state.

[0343] Furthermore, in metal plates used to achieve high-resolution patterns, the plates are very thin, making it difficult to stand them upright on a horizontal worktable. Specifically, when the metal plate is thin, the sample metal plate to be manufactured is also thin, making it difficult to position the sample metal plate with its side surface facing the upper surface of the horizontal worktable. Therefore, it is difficult to measure the residual stress of the thin metal plate, and in deposition masks manufactured using this metal plate, internal stress reduces the uniformity of the vias to be formed and the adhesion to the substrate, leading to problems such as reduced deposition efficiency and poor deposition.

[0344] Conversely, in this embodiment, residual stress can be measured regardless of the thickness of the metal plate 10.

[0345] Figure 26 This is a view used to describe a sample metal sheet manufactured using the metal sheet shown in the example. Figure 27 This is a view used to describe the method for measuring residual stress according to the example. (Refer to...) Figure 26 and Figure 27 This will describe the residual stress characteristics and measurement methods for a metal plate based on an example. (Refer to...) Figure 26 The metal plate 10 may be a metal plate used to manufacture a deposition mask 100 for achieving a high resolution of 400 PPI or higher, and may have a thickness of about 30 μm or less.

[0346] Metal sheet 10 can be formed by rolling a base metal sheet as the base material. The base metal sheet can contain metallic materials. The base metal sheet can include about 60% to about 65% by weight of iron and about 35% to about 40% by weight of nickel. More specifically, the base metal sheet can contain about 63.5% to about 64.5% by weight of iron and about 35.5% to about 36.5% by weight of nickel. In addition, the base metal sheet can also contain at least one element selected from the following elements in a content of about 1% by weight or less: carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). That is, the base metal sheet and metal sheet 10 can contain the same material.

[0347] Subsequently, the step of forming a sample metal plate 15 using the metal plate 10 can be performed. The sample metal plate 15 can be used to measure the residual stress of the metal plate 10. The sample metal plate 15 can be a sample collected at any point on the metal plate 10. In this case, the sample metal plate 15 can be at least one sample collected at any point on the metal plate 10, and the at least one sample can be used to measure the residual stress.

[0348] The steps of forming the sample metal plate 15 may include the steps of extracting the sample metal plate 15 from the metal plate 10 and etching the sample metal plate 15.

[0349] The step of extracting the sample metal plate 15 is to extract a strip-shaped sample metal plate whose width is greater than its height at any point on the metal plate 10, and the step of extracting the sample metal plate 15 may be the following steps: extracting a first sample metal plate having a width in a first direction and extracting a second sample metal plate having a width in a second direction. For example, the sample metal plate 15 may include a first sample metal plate extracted in a first direction of the metal plate 10 as the rolling direction RD and a second sample metal plate extracted in a second direction of the metal plate 10 as the transverse direction TD.

[0350] The sample metal plate 15 can be a sample with dimensions of approximately 200mm x 30mm (width x length). Specifically, the first sample metal plate can have a length of approximately 200mm in a first direction and a length of approximately 30mm in a second direction. That is, the long axis of the first sample metal plate can extend along the rolling direction RD. Additionally, the second sample metal plate can have a length of approximately 30mm in the first direction and a length of approximately 200mm in the second direction. That is, the long axis of the second sample metal plate can extend along the transverse direction TD.

[0351] Subsequently, the step of etching the sample metal plate 15 can be performed. Specifically, the step of etching the sample metal plate 15 can be a step of partially etching one surface of the sample metal plate 15. For example, the etching step can be a step of partially etching one surface of each of the first and second sample metal plates.

[0352] The etching step of the sample metal plate 15 can be as follows: in this step, a region of approximately 150mm * 30mm (width * length) – which is a region exceeding 50mm – is partially etched, while retaining a region extending from one end to 50mm along the long axis, which is the horizontal direction of the sample metal plate 15. Alternatively, the etching step of the sample metal plate 15 can be a partial etching step, such that the thickness of the 150mm * 30mm region becomes approximately 30% to approximately 70% of the thickness of the metal plate 10.

[0353] Next, the step of measuring the residual stress of the sample metal plates can be performed. Specifically, the step of measuring the residual stress can be the step of measuring the residual stress of the first sample metal plate and the second sample metal plate that have been partially etched, respectively.

[0354] Reference Figure 27 The step of measuring the residual stress of the sample metal plate 15 may include the step of placing the sample metal plate 15 on a horizontal worktable. For example, the placement step may be the step of arranging at least one of the first and second sample metal plates that have undergone half-etching on the horizontal worktable.

[0355] The sample metal plate 15 may include one surface and another surface. Specifically, the sample metal plate 15 may include one surface on which a partial etching is performed and another surface on which no partial etching is performed. The step of positioning the sample metal plate 15 may involve arranging the other surface of the sample metal plate 15 facing the upper surface of a horizontal worktable.

[0356] Subsequently, a first residual stress rate and a second residual stress rate can be measured. The first residual stress rate can be the residual stress rate of a first sample metal plate, and the second residual stress rate can be the residual stress rate of a second sample metal plate. Specifically, the first residual stress rate can be the residual stress rate of a first sample metal plate with dimensions of approximately 200 mm * 30 mm (width * length) in a first direction horizontal, and the second residual stress rate is the residual stress rate of a second sample metal plate with dimensions of approximately 200 mm * 30 mm (width * length) in a second direction horizontal. The sample metal plate 15, placed on a horizontal worktable, may warp due to internal stress caused by the rolling process. Specifically, at least one end of at least one etched region in the etched area of ​​the sample metal plate 15 may warp in a direction away from the upper surface of the horizontal worktable.

[0357] More specifically, at least one end of one surface of the semi-etched sample metal plate 15 may warp toward the center of the sample metal plate 15 while separating from the upper surface of the horizontal worktable. That is, one end of the sample metal plate 15 may warp away from the horizontal worktable due to internal stress, and this end may warp into a coiled shape depending on the magnitude of the internal stress.

[0358] That is, the residual stress rate of the sample metal plate 15 can be calculated by measuring the height of the half-etched area of ​​the sample metal plate 15 spaced apart from the upper surface of the horizontal worktable, and can satisfy the following [equation].

[0359] [Equation]

[0360] Residual stress rate = H / L

[0361] (H: The maximum height by which the etched area of ​​the sample metal plate is lifted and warped from the upper surface of the horizontal worktable; L: The length of the etched area of ​​the sample metal plate in the horizontal direction)

[0362] The residual stress rate of the sample metal plate 15 can be measured using the method described above. In this case, the residual stress rate can be a value obtained by using multiple sample metal plates 15. For example, the first residual stress rate of the first sample metal plate can be a value obtained from the average of multiple first sample metal plates measured using the method described above. Similarly, the second residual stress rate of the second sample metal plate can be a value obtained from the average of multiple second sample metal plates measured using the method described above. That is, the residual stress rate can be the average residual stress rate.

[0363] The residual stress rate of the sample metal plate 15 can be about 0.06 or less. More specifically, the residual stress rate of the sample metal plate 15 can be about 0.0333 (5 / 150) or less. For example, the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate can be about 0.06 or less. Preferably, the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate can be about 0.0333 (5 / 150) or less.

[0364] When the residual stress rate of the sample metal plate 15 exceeds approximately 0.06, warping (wave deformation) may occur in the metal plate 10, and process defects may occur during the fabrication of the deposition mask 100 using the metal plate. Furthermore, when depositing organic materials using the deposition mask 100 fabricated using the metal plate 10, deposition defects may occur. Specifically, due to warping, the position, shape, etc., of the vias TH formed in the deposition mask 100 may be non-uniform, which may reduce deposition efficiency and cause deposition defects. Therefore, it is preferable that the residual stress rate of the metal plate 10 meets the above-mentioned range, and more preferably, the residual stress rate is close to zero. That is, when the residual stress rate of the metal plate 10 exceeds the above-mentioned range, the metal plate 10 may not be suitable as a metal plate for fabricating the deposition mask 100.

[0365] The residual stress rates of the first sample metal plate and the second sample metal plate can be different from each other. For example, the first residual stress rate of the first sample metal plate extending along the rolling direction RD can be less than the second residual stress rate of the second sample metal plate extending along the transverse direction TD.

[0366] In this configuration, both the first and second sample metal plates can warp along the second direction. Specifically, the two corners extending along the long axis of the first sample metal plate may tend to warp and curl towards the central portion of the first sample metal plate due to internal stress. Additionally, one of the two corners extending along the short axis of the second sample metal plate, located within the etched area, may tend to warp and curl towards the central portion of the second sample metal plate due to internal pressure.

[0367] The difference between the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate can be approximately 0.0333 (5 / 150). More specifically, the difference between the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate can be approximately 0.02 (3 / 150). When the difference in residual stress rates exceeds approximately 0.0333 (5 / 150), warping may be concentrated in the first direction of the metal plate 10 as the rolling direction RD or in the second direction as the transverse direction TD, and process defects may occur when the metal plate 10 is used to manufacture the deposition mask 100. Therefore, it is preferable that the difference between the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate is within the above-mentioned range, and more preferably, the difference in residual stress rates is close to zero and small.

[0368] However, the examples are not limited to this, and within the aforementioned range of residual stress rates, the first residual stress rate of the first sample metal plate may be greater than the second residual stress rate of the second sample metal plate. Furthermore, within the aforementioned range of the difference in residual stress rates, the first residual stress rate of the first sample metal plate may be greater than the second residual stress rate of the second sample metal plate. In this case, the first sample metal plate may warp in the first direction, and the second sample metal plate may also warp in the first direction. Specifically, one of the two corners extending along the minor axis in the first sample metal plate, located in the etched region, may tend to warp and curl towards the central portion of the first sample metal plate. Additionally, the two corners extending along the major axis in the second sample metal plate may tend to warp and curl towards the central portion of the second sample metal plate.

[0369] The deposition mask 100 can be manufactured by supplying the metal sheet 10 using a roll-to-roll method. In this case, the metal sheet 10 can be supplied in the long axis direction of the metal sheet 10, and can be supplied while a predetermined amount of tension is applied in the long axis direction of the metal sheet using a roll-to-roll method. That is, the metal sheet 10 can be supplied while tension is applied along the rolling direction RD of the metal sheet 10.

[0370] Furthermore, during the manufacturing process of the deposition mask 100 used to form through holes, etc., on the metal plate 10, a separate tension can be applied to the metal plate 10 in the long axis direction. That is, a separate tensile force can be applied to the rolling direction RD of the metal plate 10.

[0371] Therefore, the metal sheet 10 can be drawn in the rolling direction RD. Preferably, the residual stress rate of the metal sheet 10 in the rolling direction RD is less than the residual stress rate in the transverse direction TD. More specifically, it is preferable that the first residual stress rate of the metal sheet 10 is less than its second residual stress rate. That is, it is preferable that the residual stress rate of the first sample metal sheet extracted from the metal sheet 10 along the first direction, which is the rolling direction RD, is less than the residual stress rate of the second sample metal sheet extracted along the second direction, which is the transverse direction TD.

[0372] As an example, when the first residual stress rate of the metal plate 10 is greater than the second residual stress rate, a lot of warping may occur in the first direction of the metal plate 10, and thus a lot of deformation may occur. Therefore, when the metal plate 10 is supplied by a roll-to-roll method, the length of the supplied metal plate 10 may be uneven due to deformation. In addition, during the process of forming through holes or the like on the metal plate 10, deformation caused by warping may reduce the uniformity of the position and shape of the formed through holes.

[0373] Therefore, it is preferable that the first residual stress rate of the metal plate 10 is lower than the second residual stress rate of the metal plate 10, rather than the first residual stress rate of the metal plate 10 being higher than the second residual stress rate of the metal plate 10. Thus, even if the metal plate 10 is pulled along the rolling direction RD during the manufacturing process of the deposition mask 100, a uniform and precise pattern can be formed.

[0374] The operation and effects of the invention will be described in more detail below with reference to examples and comparative examples.

[0375] Example 1

[0376] A sample metal plate was extracted from a metal plate having a thickness of about 25 μm and containing about 63.5 wt% to about 64.5 wt% iron and about 35.5 wt% to about 36.5 wt% nickel.

[0377] The sample metal plate has dimensions of 200mm*30mm (width*length), and the first sample metal plate is extracted in the rolling direction RD, and the second sample metal plate is extracted in the transverse direction TD.

[0378] The first sample metal plate can have a horizontal length of 200 mm, and the horizontal direction of the first sample metal plate can be the rolling direction RD. Additionally, the second sample metal plate can have a horizontal length of 200 mm, and the horizontal direction of the second sample metal plate can be the transverse direction TD.

[0379] Subsequently, an area of ​​approximately 150mm x 30mm (width x length) – which is an area exceeding 50mm – is partially etched, while preserving an area extending from one end to 50mm in the horizontal direction of the sample metal plate. Partial etching is performed until the thickness of the etched area becomes approximately 30% to approximately 70% of the thickness of the unetched area.

[0380] The sample metal plate after the semi-etching process is placed on a horizontal worktable. In this case, the other surface of the sample metal plate, opposite to the semi-etched surface, is arranged to face the upper surface of the horizontal worktable.

[0381] Three sample metal plates, one first and one second, were manufactured using the method described above. The average value in each direction was obtained by measuring the maximum height—at which the ends of each sample metal plate, set on the horizontal worktable, were spaced apart from the horizontal worktable—and the residual stress rate was calculated based on the average value.

[0382] Example 2

[0383] In addition to extracting sample metal plates from a metal plate having a thickness of about 25 μm and containing about 63.5% to about 64.5% iron and about 35.5% to about 36.5% nickel, three sample metal plates were manufactured in the same manner as in Example 1 for each of the rolling direction RD and the transverse direction TD.

[0384] Subsequently, the sample metal plates are arranged on a horizontal worktable, and the average value in each direction is obtained by measuring the maximum height—at which the ends of each sample metal plate set on the horizontal worktable are spaced apart from the horizontal worktable—and the residual stress rate is calculated based on the average value.

[0385] Example 3

[0386] In addition to extracting sample metal plates from a metal sheet having a thickness of about 30 μm and containing about 63.5% to about 64.5% iron and about 35.5% to about 36.5% nickel, three sample metal plates were manufactured in the same manner as in Example 1 for each of the rolling direction RD and the transverse direction TD.

[0387] Subsequently, the sample metal plates were arranged on a horizontal worktable, and the average value in each direction was obtained by measuring the maximum height—at which the ends of each sample metal plate set on the horizontal worktable were spaced apart from the horizontal worktable—and the residual stress rate was calculated based on the average value.

[0388] Example 4

[0389] In addition to extracting sample metal plates from a metal plate having a thickness of about 20 μm and containing about 63.5% to about 64.5% iron and about 35.5% to about 36.5% nickel, three sample metal plates were manufactured in the same manner as in Example 1 for each of the rolling direction RD and the transverse direction TD.

[0390] Subsequently, the sample metal plates were arranged on a horizontal worktable, and the average value in each direction was obtained by measuring the maximum height—at which the ends of each sample metal plate set on the horizontal worktable were spaced apart from the horizontal worktable—and the residual stress rate was calculated based on the average value.

[0391] Comparison Example 1

[0392] In addition to extracting sample metal plates from a metal plate having a thickness of about 30 μm and containing about 63.5% to about 64.5% iron and about 35.5% to about 36.5% nickel, three sample metal plates were manufactured in the same manner as in Example 1 for each of the rolling direction RD and the transverse direction TD.

[0393] Subsequently, the sample metal plates were arranged on a horizontal worktable, and the average value in each direction was obtained by measuring the maximum height—at which the ends of each sample metal plate set on the horizontal worktable were spaced apart from the horizontal worktable—and the residual stress rate was calculated based on the average value.

[0394] Comparison Example 2

[0395] In addition to extracting sample metal plates from a metal plate having a thickness of about 25 μm and containing about 63.5% to about 64.5% iron and about 35.5% to about 36.5% nickel, three sample metal plates were manufactured in the same manner as in Example 1 for each of the rolling direction RD and the transverse direction TD.

[0396] Subsequently, the sample metal plates were arranged on a horizontal worktable, and the average value in each direction was obtained by measuring the maximum height—at which the ends of each sample metal plate set on the horizontal worktable were spaced apart from the horizontal worktable—and the residual stress rate was calculated based on the average value.

[0397] Table 5

[0398]

[0399] Referring to Table 5, it can be seen that the residual stress rate of thin metal plates can be measured. Specifically, it can be seen that the residual stress rate of metal plates with a thickness of about 30 μm or less can be measured, and the residual stress rate of metal plates with a thickness of about 20 μm can also be measured.

[0400] Furthermore, referring to Table 5, it can be seen from the residual stress rates of the sample metal plates according to the example and comparative examples that the residual stress rate of the first sample metal plate extending in the rolling direction RD is less than the residual stress rate of the second sample metal plate extending in the transverse direction TD. Additionally, it can be seen that the residual stress rate of the sample metal plate according to the example is 0.06 or less. Specifically, it can be seen that the residual stress rate of each of the first and second sample metal plates according to the example is 0.06 or less. That is, the metal plate according to the example can have a low residual stress rate, thereby minimizing warpage. When using the metal plate to manufacture a deposition mask, the position and shape of the vias can be precisely formed on the metal plate.

[0401] On the other hand, in the case of Comparative Example 1, the residual stress rate of the first sample metal plate extending along the rolling direction RD is 0.06 or less, while the residual stress rate of the second sample metal plate extending along the transverse direction TD exceeds 0.06. Therefore, the sample metal plate of Comparative Example 1 is prone to warping in the transverse direction TD. In the case of Comparative Example 2, the residual stress rate of the first sample metal plate extending along the rolling direction RD exceeds 0.06, and because the second sample metal plate extending along the transverse direction TD warps and curls in the transverse direction TD, it cannot be measured. That is, in the metal plates according to the comparative examples, both the residual stress rate in the rolling direction RD and the residual stress rate in the transverse direction TD are large. In particular, because the residual stress rate in the transverse direction TD is very large, the metal plates of the comparative examples tend to warp in the transverse direction TD. Therefore, when using the metal plates of the comparative examples to manufacture a deposition mask, the position and shape of the vias formed on the metal plates may be non-uniform.

[0402] In the example, the residual stress of a metal sheet 10 manufactured thinly through a rolling process can be effectively measured. Specifically, the residual stress of a metal sheet 10 with a thickness of approximately 30 μm or less can be measured. Even more specifically, the residual stress can be measured regardless of the thickness of the metal sheet 10.

[0403] Furthermore, the metal plate 10 measured by the above method can have a residual stress rate of about 0.06 or less. Specifically, the residual stress rate of the metal plate in the rolling direction RD and the residual stress rate in the transverse direction TD can be about 0.06 or less. Therefore, in this example, the metal plate 10 can be used to fabricate a deposition mask 100 with a more precise pattern.

[0404] Figure 28 and Figure 29 This is a view showing a deposition pattern formed via a deposition mask according to an embodiment.

[0405] Reference Figure 28 In the deposition mask 100 according to the embodiment, the height H1 between a surface of the deposition mask 100 in which the small surface holes V1 are formed and the communicating portion can be about 3.5 μm or less. For example, the height H1 can be about 0.1 μm to about 3.4 μm. For example, the height H1 can be about 0.5 μm to about 3.2 μm. For example, the height H1 can be about 1 μm to about 3 μm.

[0406] Therefore, the distance between one surface of the deposition mask 100 and the substrate on which the deposition pattern is arranged can be short, and thus deposition defects due to shading effects can be reduced. For example, by using the deposition mask 100 according to the embodiment, defects such as depositing different deposition materials in the region between two adjacent patterns during the formation of R, G, and B patterns can be prevented. Specifically, as Figure 29 As shown, when the above pattern is formed from left to right in the order of R, G and B, the shading effect can prevent the R pattern and G pattern from being deposited in the area between the R pattern and G pattern.

[0407] Alternatively, a metal sheet with a residual stress rate of 0.06 or less can be used to manufacture the deposition mask 100 according to the embodiment. Specifically, the deposition mask 100 can be manufactured using a metal sheet with a residual stress rate of 0.06 or less in the rolling direction RD and in the transverse direction TD. Therefore, warping in the metal sheet 10 can be minimized during the manufacture of the deposition mask 100. Consequently, small surface holes V1, large surface holes V2, and through holes TH can be formed uniformly and precisely on the metal sheet 10.

[0408] Furthermore, since the deposition mask 100 according to the embodiment is manufactured by using a metal plate in which residual stress is pre-measured, high-resolution patterns with 400 PPI or higher, and further 800 PPI or higher, can be accurately achieved, and the deposition efficiency of organic materials can be improved when organic materials are deposited on the substrate 300 using the deposition mask 100.

[0409] Meanwhile, the tilt angle of the large surface apertures formed in the deposition mask affects the height or thickness of the central portion of the ribs. That is, when the tilt angle of the large surface apertures is less than a predetermined range, the thickness of the central portion of the ribs connecting the vias becomes thinner. Furthermore, when the thickness of the central portion of the ribs becomes thinner, the rigidity of the deposition mask decreases, leading to length deformation of the deposition mask, such as stretching deformation, total spacing deformation, and sagging. In addition, with length deformation, the uniformity of the mask pattern shape and the position of the vias may decrease. Moreover, when the diameter of the vias is non-uniform, the pattern deposition efficiency may decrease, resulting in poor deposition.

[0410] Furthermore, when the tilt angle of the large surface apertures formed in the deposition mask is greater than a predetermined range, the following problem arises: when organic material is deposited on the substrate, a portion of the organic material does not pass through the vias. Specifically, in areas where the vias do not overlap with the organic material deposition container or are positioned in a direction perpendicular to the movement direction of the organic material deposition container, the organic material travels a longer distance, and therefore the following problem arises: a portion of the organic material cannot pass through the vias and is deposited on island-like portions formed between adjacent vias or on the inner surface of the large surface apertures of the vias.

[0411] Therefore, in this embodiment, a deposition mask can be provided that can uniformly form high-resolution or ultra-high-resolution (UHD) patterns without deposition defects and can prevent various length deformations.

[0412] Figure 30 This is a plan view showing the effective portion of a deposition mask 100A according to another embodiment of the present invention.

[0413] like Figure 30 As shown, the large surface aperture V2 can include multiple etched surfaces. That is, in Figure 6a In the previous section, it was described that the large surface hole V2 includes a second etched surface ES2. At this point, Figure 6a The large surface aperture V2 etched surface in the image also essentially comprises multiple etched surfaces, but these multiple etched surfaces are formed under the same conditions. On the other hand, Figure 30 The deposition mask 100A is formed under the following conditions: wherein, in a large surface hole V2, the etched surfaces in the vertical direction and the etched surfaces in the horizontal direction are different from each other.

[0414] In other words, Figure 6a In the deposition mask 100, a large surface hole V2 is formed while having a second etched surface ES2 under generally the same conditions, but in Figure 30 In the deposition mask 100A, a large surface hole V2 can be formed simultaneously with a second etched surface ES2 and a third etched surface ES3 under different conditions.

[0415] Here, Figure 30 In this embodiment, the large surface aperture V2 and the small surface aperture V1 of the deposition mask are arranged to be aligned with each other. In other words, the center of the small surface aperture V1 and the center of the large surface aperture V2 formed in all regions of the deposition mask are aligned. For example, the center of the small surface aperture V1 and the center of the large surface aperture V2 formed in all regions of the deposition mask can be positioned on the same vertical line.

[0416] Meanwhile, the etched surface can also be referred to as the inner surface of the large surface hole V2.

[0417] like Figure 30 As shown, in another embodiment of this disclosure, the large surface aperture V2 may include a second etched surface ES2 and a third etched surface ES3. The large surface aperture is formed by connecting a plurality of second etched surfaces ES2 and a plurality of third etched surfaces ES3. Preferably, the plurality of second etched surfaces ES2 and the plurality of third etched surfaces ES3 form a large surface aperture.

[0418] The second etched surface ES2 of the large surface hole is an inner surface positioned horizontally relative to the center of the large surface hole in the through-hole. Preferably, the second etched surface ES2 is an inner surface positioned on both sides in the longitudinal direction relative to the center of the large surface hole. The second etched surface ES2 is an inner surface positioned on both sides in the tensile direction relative to the center of the large surface hole. The second etched surface ES2 is an inner surface positioned on both sides in the X-axis direction relative to the center of the large surface hole in the through-hole. Therefore, the second etched surface ES2 includes a first-stage second etched surface ES2-1 positioned in the first longitudinal direction relative to the center of the large surface hole in the through-hole and a second-stage second etched surface ES2-2 positioned in the second longitudinal direction opposite to the first longitudinal direction. Meanwhile, in another surface of the deposition mask, the cross-sectional tilt angle of the first-stage second etched surface ES2-1 can correspond to the cross-sectional tilt angle of the second-stage second etched surface ES2-2. That is, the cross-sectional tilt angle θ of the first-stage second etched surface ES2-1 and the cross-sectional tilt angle θ of the second-stage second etched surface ES2-2 can be the same.

[0419] The third etched surface ES3 of the large surface hole is an inner surface positioned vertically relative to the center of the large surface hole in the through hole. Preferably, the third etched surface ES3 is an inner surface positioned on both sides in the lateral direction relative to the center of the large surface hole. The third etched surface ES3 is an inner surface positioned on both sides in a direction perpendicular to the stretching direction relative to the center of the large surface hole. The third etched surface ES3 is an inner surface positioned on both sides in the Y-axis direction relative to the center of the large surface hole. Therefore, the third etched surface ES3 includes a first-stage third etched surface ES3-1 positioned in a first lateral direction relative to the center of the large surface hole in the through hole and a second-stage third etched surface ES3-2 positioned in a second lateral direction opposite to the first lateral direction. Simultaneously, the cross-sectional inclination angle of the first-stage third etched surface ES3-1 can correspond to the cross-sectional inclination angle of the second-stage third etched surface ES3-2. That is, the inclination angle θ of the first-stage third etched surface ES3-1 and the inclination angle θ of the second-stage third etched surface ES3-2 can be the same.

[0420] Meanwhile, the cross-sectional tilt angle θ of the second etched surface ES2 can be different from that of the third etched surface ES3. That is, the cross-sectional tilt angle θ of the second etched surface ES2 can be smaller than that of the third etched surface ES3. In other words, in the large surface hole of the through hole, the cross-sectional tilt angle θ of the etched surface in the lateral direction intersecting the longitudinal direction can be greater than the cross-sectional tilt angle θ of the etched surface in the longitudinal direction.

[0421] The second etched surface ES2 and the third etched surface ES3 can be surfaces formed by etch factors during the etching process. The second etched surface ES2 and the third etched surface ES3 can be inner surfaces extending from the via TH to another surface 102 of the deposition mask 100. For example, the second etched surface ES2 and the third etched surface ES3 can extend from the end of the via TH toward an adjacent via TH, and can extend toward the island portion IS. Additionally, the second etched surface ES2 and the third etched surface ES3 can extend along the direction of the non-effective portion UA. That is, the second etched surface ES2 and the third etched surface ES3 can extend along the direction along which non-etched surfaces are formed in the other surfaces 102 of the deposition mask 100.

[0422] Ribs RB1 and RB can be positioned between through holes TH. For example, refer to... Figure 30 A second rib RB2 can be formed between adjacent first through holes TH1 and second through holes TH2 in the horizontal direction. Additionally, another first rib RB1 can be formed between adjacent first through holes TH1 and third through holes TH3 in the vertical direction.

[0423] The first rib RB1 is arranged to extend longitudinally on the deposition mask 100. The first rib RB1 is positioned longitudinally between a plurality of through-holes arranged laterally on the deposition mask 100. The first rib RB1 connects between a plurality of island-shaped portions IS arranged longitudinally on the deposition mask 100.

[0424] The second rib RB2 is configured to extend laterally on the deposition mask 100. The second rib RB2 is formed laterally between a plurality of through holes arranged longitudinally on the deposition mask 100. The second rib RB2 connects between a plurality of island-shaped portions IS arranged laterally on the deposition mask 100.

[0425] That is, ribs RB1 and RB2 can be positioned between adjacent vias TH. More specifically, ribs RB1 and RB2 can be positioned between adjacent large surface vias V2. More specifically, the second rib RB2 can be positioned in the region where the respective second etched surfaces ES2 of adjacent large surface vias V2 are connected. More specifically, the first rib RB1 can be positioned in the region where the respective third etched surfaces ES3 of adjacent large surface vias V2 are connected. That is, ribs RB1 and RB2 can be in the region where the boundaries of adjacent large surface vias V2 are connected.

[0426] The central portion of the first rib RB1 may have a first thickness T1. Additionally, the central portion of the second rib RB2 may have a second thickness T2, different from the first thickness T1. The thickness of the central portion of the first rib RB1 may differ from the thickness of the central portion of the second rib RB2. Specifically, the thickness of the central portion of the first rib RB1 may be greater than the thickness of the central portion of the second rib RB2. That is, the first rib RB1 is located in the region connecting the third etched surface ES3 of the adjacent via, and the second rib RB2 is located in the region connecting the second etched surface ES2 of the adjacent via. In this case, the cross-sectional tilt angle of the third etched surface ES3 is greater than the cross-sectional tilt angle of the second etched surface ES2. Therefore, the thickness of the central portion of the first rib RB1 located in the region connecting the second etched surface ES2 with a larger cross-sectional tilt angle may be greater than the thickness of the central portion of the second rib RB2 located in the region connecting the third etched surface ES3 with a smaller cross-sectional tilt angle. The cross-sectional tilt angle will be described below.

[0427] Figure 31 It shows the overlapping of various cross sections for description. Figure 30 A view showing the height difference and dimensions between the cross section in the A-A' direction and the cross section in the B-B' direction.

[0428] First, the cross-section along the A-A' direction will be described. The A-A' direction is the cross-section that intersects the central region between the first through hole TH1 and the third through hole TH3, which are adjacent in the vertical direction. That is, the cross-section along the A-A' direction may not include the through hole TH.

[0429] An island-like portion IS of the third etched surface ES3 in the large surface aperture and another unetched surface of the deposition mask within the third etched surface ES3 in the large surface aperture can be positioned in a cross-section along the A-A' direction. Therefore, the island-like portion IS can include a surface parallel to one of the unetched surfaces of the deposition mask. Alternatively, the island-like portion IS can include a surface that is the same as or parallel to another unetched surface of the deposition mask.

[0430] Next, the cross-section along the B-B' direction will be described. The B-B' direction is the cross-section that intersects the center of each of the first through-hole TH1 and the second through-hole TH2 that are adjacent in the horizontal direction. That is, the cross-section along the B-B' direction may include multiple through-holes TH.

[0431] A second rib RB2 can be positioned between adjacent third through-hole TH3 and fourth through-hole TH4 in the B-B' direction. Another second rib RB2 can be positioned between the fourth through-hole TH4 and a fifth through-hole adjacent to the fourth through-hole in the horizontal direction, but in the opposite direction to the third through-hole TH3. A through-hole TH can be positioned between one rib and another. That is, a through-hole TH can be positioned between two adjacent ribs RB in the horizontal direction.

[0432] Furthermore, the first rib RB1 can be positioned in the cross-section along the A-A' direction, wherein the first rib RB1 is the region connecting the etched surface ES3 in the large surface hole and the etched surface ES3 in the adjacent large surface hole to each other. Here, the first rib RB1 can be the region where the boundaries of two adjacent large surface holes are connected.

[0433] Since the first rib RB1 and the second rib RB2 are etched surfaces, their thickness can be smaller than that of the island portion IS. For example, the island portion can have a width of about 2 μm or more. That is, the width in the direction parallel to the other surface where the unetched portion remains on the other surface can be about 2 μm or less. When the width of one end and the other end of an island portion IS is 2 μm or more, the overall volume of the deposition mask 100 can be increased. The deposition mask 100 with this structure ensures sufficient stiffness to resist tensile forces applied to organic material deposition processes, and is therefore advantageous for maintaining the uniformity of the vias.

[0434] Figure 32 It shows along Figure 30 A view of the cross-section taken by line B-B' in the diagram. Figure 33 It shows along Figure 30 A view of the cross-section taken by line C-C' in the diagram, and Figure 34 It shows along Figure 30 The view of the cross section cut by line D-D' in the diagram.

[0435] Figures 32 to 34 The difference between the cross-sectional tilt angle of the second etched surface ES2 and the cross-sectional tilt angle of the third etched surface ES3 in the through-hole is shown. Figures 32 to 34 The difference between the thickness of the second rib RB2 located in the region connecting the second etched surface ES2 and the thickness of the first rib RB1 located in the region connecting the third etched surface ES3 is shown. Figures 32 to 34 The difference between the height between a surface of a deposition mask 100 with a small surface hole V1 formed on the first rib RB1 and the height between a surface of a deposition mask 100 with a small surface hole V1 formed on the second rib RB2 and the connecting portion is shown.

[0436] Reference Figures 32 to 34 This will describe the cross-sections along the B-B' direction, the cross-sections along the C-C' direction, and the vertical and horizontal cross-sections along the D-D' direction. Additionally, it will describe the cross-sections based on... Figures 32 to 34 The ribs RB1 and RB2, as well as the through hole TH between ribs RB1 and RB2 located in the effective area, are described.

[0437] Reference Figures 32 to 34 In the deposition mask 100 according to the embodiment, the thickness of the effective portion AA formed by etching the via can be different from the thickness of the ineffective portion UA ​​that is not etched. Specifically, the thickness of the central portion of the first rib RB1 and the central portion of the second rib RB2 can be less than the thickness of the ineffective portion UA ​​that is not etched.

[0438] In the deposition mask 100 according to the embodiment, the thickness of the non-effective portion UA ​​can be greater than the thickness of the effective portions AA1, AA2, and AA3. For example, in the deposition mask 100, the maximum thickness of the non-effective portion UA ​​or the non-deposition region NDA can be 30 μm or less. For example, in the deposition mask 100, the maximum thickness of the non-effective portion UA ​​or the non-deposition region NDA can be 25 μm or less. For example, in the deposition mask of the embodiment, the maximum thickness of the non-effective portion or the non-deposition region can be from 15 μm to 25 μm. When the maximum thickness of the non-effective portion or the non-deposition region of the deposition mask according to this embodiment is greater than 30 μm, it may be difficult to form vias TH with fine dimensions because the metal plate 10, which is the raw material of the deposition mask 100, is relatively thick. In addition, when the maximum thickness of the non-effective portion UA ​​or the non-deposition region NDA of the deposition mask 100 is less than 15 μm, it may be difficult to form vias with uniform dimensions because the metal plate is relatively thin.

[0439] The maximum thicknesses T1 and T2 measured at the central portions of the first rib RB1 and the second rib RB2 can be about 15 μm or less. For example, the maximum thicknesses T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 can be about 7 μm to about 10 μm. For example, the maximum thicknesses T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 can be about 6 μm to about 9 μm. When the maximum thicknesses T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 are greater than about 15 μm, it may be difficult to form OLED deposition patterns with a high resolution of 500 PPI or higher. Additionally, when the maximum thicknesses T1 and T2 measured at the center of the first rib RB1 and the second rib RB2 are less than about 6 μm, it may be difficult to form deposition patterns uniformly.

[0440] Meanwhile, the maximum thicknesses T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 can be different from each other. Specifically, the maximum thicknesses T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 can have different values ​​while satisfying the above-described range. More specifically, the maximum thickness T1 measured at the center of the first rib RB1 can be greater than the maximum thickness T2 measured at the center of the second rib RB2. Within the above-described range, the maximum thickness T1 measured at the center of the first rib RB1 can have a larger value than the maximum thickness T2 measured at the center of the second rib RB2. In other words, the maximum thickness T1 measured at the center of the first rib RB1 can have a predetermined difference (Δ) with the maximum thickness T2 measured at the center of the second rib RB2.

[0441] The height of the small surface holes in the deposition mask 100 can be approximately 0.2 to 0.4 times the maximum thicknesses T1 and T2 of the second ribs RB1 and RB2. Therefore, the height of the small surface holes formed on the first rib RB1 can differ from the height of the small surface holes formed on the second rib RB2. In other words, in the small surface holes of the through-hole, the height of the small surface holes in the first direction (specifically, the longitudinal direction) can differ from the height of the small surface holes in the second direction (specifically, the lateral direction). Specifically, the height H2 of the small surface holes formed on the first rib RB1 can be greater than the height H1 of the small surface holes formed on the second rib RB2.

[0442] As an example, the maximum thickness measured at the center of the first rib RB1 or the second rib RB2 can be from about 7 μm to about 9 μm, and the height of the small surface hole between a surface of the deposition mask 100 and the connecting portion can be from about 1.4 μm to about 3.5 μm.

[0443] The height H2 of the small surface aperture at the first rib RB1 of the deposition mask 100 can be about 4.0 μm or less. The height H1 of the small surface aperture at the second rib RB2 of the deposition mask 100 can be about 3.5 μm or less.

[0444] Preferably, the height H2 of the small surface aperture at the first rib RB1 of the deposition mask 100 can be about 3.5 μm or less. The height H1 of the small surface aperture at the second rib RB2 of the deposition mask 100 can be about 2.5 μm or less.

[0445] Preferably, the height H2 of the small surface aperture at the first rib RB1 can be from about 0.1 μm to about 3.4 μm. The height H1 of the small surface aperture at the second rib RB2 can be from about 0.1 μm to about 2.4 μm. For example, the height of the small surface aperture V1 at the first rib RB1 of the deposition mask 100 can be from about 0.5 μm to about 3.2 μm. For example, the height of the small surface aperture V1 at the second rib RB1 of the deposition mask 100 can be from about 0.5 μm to about 2.2 μm. For example, the height of the small surface aperture at the first rib RB1 of the deposition mask 100 can be from about 1 μm to about 3 μm. For example, the height of the small surface aperture at the second rib RB2 of the deposition mask 100 can be from about 1 μm to about 2 μm. Here, the height can be measured in the thickness measurement direction of the deposition mask 100, i.e., in the depth direction, and the height can be the height measured from one surface of the deposition mask 100 to the connected portion.

[0446] When the height between a surface of the deposition mask 100 and the connected portion is greater than approximately 3.5 μm, poor deposition may occur due to a shadowing effect, in which the deposited material diffuses into a region larger than the area of ​​the via during OLED deposition. Therefore, the height of the small surface hole at the first rib RB1 is set to 3.5 μm or less, and the height of the small surface hole at the second rib RB2 is set to 3.0 μm or less. Simultaneously, the heights of the small surface holes at the first rib RB1 and the second rib RB2 can have a predetermined difference (Δ).

[0447] Furthermore, the aperture W3 at one surface of the small surface aperture V1 in which the deposition mask 100 is formed and the aperture W4 at the connecting portion, which serves as the boundary between the small surface aperture V1 and the large surface aperture V2, can be similar to or different from each other. The aperture W3 at one surface of the small surface aperture V1 in which the deposition mask 100 is formed can be larger than the aperture W4 at the connecting portion. For example, the difference between the aperture W3 at one surface of the deposition mask 100 and the aperture W4 at the connecting portion can be from about 0.01 μm to about 1.1 μm. For example, the difference between the aperture W3 at one surface of the deposition mask and the aperture W4 at the connecting portion can be from about 0.03 μm to about 1.1 μm. For example, the difference between the aperture W3 at one surface of the deposition mask and the aperture W4 at the connecting portion can be from about 0.05 μm to about 1.1 μm.

[0448] When the difference between the aperture W1 at one surface of the deposition mask 100 and the aperture W2 at the connected portion is greater than about 1.1 μm, poor deposition may occur due to the shadowing effect.

[0449] Additionally, on the central portion of the second rib RB2, the cross-sectional inclination angle θ corresponding to the interior angle between the virtual first line and the virtual second line can be 35 degrees to 45 degrees. The virtual first line corresponds to another surface of the deposition mask 100, and the virtual second line connects one end E1 of the second etched surface ES2 of the large surface hole V2 to one end E2 of the connecting portion located between the small surface hole V1 and the large surface hole V2. On the central portion of the first rib RB1, the cross-sectional inclination angle θ corresponding to the interior angle between the virtual first line and the virtual third line can be 45 degrees to 55 degrees. The virtual first line corresponds to another surface of the deposition mask 100, and the virtual third line connects one end E3 of the third etched surface ES3 of the large surface hole V2 to one end E4 of the connecting portion.

[0450] In other words, the cross-sectional inclination angle of the large surface aperture can be defined as follows. The cross-sectional inclination angle of the large surface aperture can be an interior angle between a virtual first straight line and a virtual second straight line. In this case, the first straight line can refer to another surface of the deposition mask corresponding to the second or third etched surface of the large surface aperture V2. In this case, the other surface can be an unetched, flat surface of the deposition mask. Additionally, the virtual second straight line can be a straight line connecting one end of the etched surface of the large surface aperture V2 to one end of the connected portion.

[0451] Therefore, high-resolution deposition patterns with 400 PPI or greater, especially 500 PPI or greater, can be formed, and at the same time, island-shaped portions IS can exist on another surface of the deposition mask 100.

[0452] According to the embodiment, the large surface aperture of the via has a first cross-sectional tilt angle in the longitudinal direction and a second cross-sectional tilt angle in the lateral direction that is larger than the first cross-sectional tilt angle. Furthermore, the thickness of the ribs arranged in the longitudinal direction can be increased by the difference between the first and second cross-sectional tilt angles, thereby ensuring the rigidity of the deposition mask. In addition, since the rigidity of the deposition mask is ensured, length deformation can be minimized, and therefore, pattern deposition efficiency can be improved by increasing the uniformity of the mask pattern shape and the position of the vias.

[0453] Additionally, according to the implementation, OLED pixel patterns can be uniformly deposited in all areas, regardless of the location of the vias, by reducing the tilt angle of the large surface apertures of the vias in a direction perpendicular to the moving direction of the organic deposition container.

[0454] Figure 35 This is a plan view showing the effective portion of a deposition mask according to yet another embodiment of the present invention. Figure 36 It shows Figure 35Cross-sectional view of the second through hole, and Figure 37 It shows Figure 35 Cross-sectional view of the third through hole.

[0455] and Figure 30 Compared to the deposition mask in the middle, Figure 35 The deposition masks differ in the vias arranged in the outermost part of the effective portion. Therefore, in the following text, only those arranged in... Figure 35 The outermost part of the effective part is at the same as Figure 30 The through holes that form a contrast are described.

[0456] Reference Figure 35 The effective portion of the deposition mask may include multiple vias. The multiple vias may include: a first via VH1 disposed in the inner region of the effective portion, a second via VH2 disposed in the first outermost portion of the effective portion, and a third via VH3 disposed in the second outermost portion of the effective portion.

[0457] First through hole VH1 and Figures 31 to 34 The vias described herein are identical. That is, the first via VH1 includes a second etched surface ES2 and a third etched surface ES3. The second etched surface ES2 includes a first-stage second etched surface ES2-1 and a second-stage second etched surface ES2-2 that face each other in the longitudinal direction and have the same first cross-sectional inclination angle.

[0458] Additionally, the third etched surface ES3 includes a first-stage third etched surface ES3-1 and a second-stage third etched surface ES3-2 that face each other in the lateral direction and have the same second cross-sectional tilt angle. Furthermore, the first cross-sectional tilt angle of the first through-hole VH1 is smaller than the second cross-sectional tilt angle of the first through-hole VH1.

[0459] Simultaneously, the second through-hole VH2 can be disposed at the first outermost portion of the effective portion, and the third through-hole VH3 can be disposed at the second outermost portion opposite to the first outermost portion. Specifically, the first outermost portion can be the outermost region in the first longitudinal direction of the effective portion. In this case, the first longitudinal direction can be the leftward direction. Therefore, the first outermost portion can be the region located at the leftmost position in the effective portion. The second outermost portion can be the outermost region in the second longitudinal direction of the effective portion. In this case, the second longitudinal direction can be the rightward direction. Therefore, the second outermost portion can be the region located at the rightmost position in the effective portion.

[0460] The second through hole VH2 is disposed in the first outermost portion, and the third through hole VH3 is disposed in the second outermost portion.

[0461] Similar to the first via VH1, the large surface aperture of the second via VH2 includes a second etched surface ES2 and a third etched surface ES3. In this case, the third etched surface ES3 of the large surface aperture of the second via VH2 can have the same cross-sectional tilt angle as the third etched surface ES3 of the large surface aperture of the first via VH1. However, the cross-sectional tilt angle of the second etched surface ES2 of the large surface aperture of the second via VH2 can be different from that of the second etched surface ES2 of the large surface aperture of the first via VH1.

[0462] The second etched surface ES2 of the large surface hole of the second through hole VH2 has a third secondary etched surface ES2-3 and a fourth secondary etched surface ES2-4 facing each other in the longitudinal direction.

[0463] In this case, the third-stage second etched surface ES2-3 is located in the region adjacent to the non-effective portion UA, and the fourth-stage second etched surface ES2-4 is located in the region adjacent to the inner region (which may refer to the central region) of the effective portion.

[0464] Furthermore, the third-stage second etched surface ES2-3 has a third cross-sectional tilt angle, and the fourth-stage second etched surface ES2-4 has a fourth cross-sectional tilt angle. In this case, the third and fourth cross-sectional tilt angles can be different from each other. That is, the third-stage second etched surface ES2-3 can have a cross-sectional tilt angle different from that of the fourth-stage second etched surface ES2-4. Preferably, the cross-sectional tilt angle of the third-stage second etched surface ES2-3 can be greater than that of the fourth-stage second etched surface ES2-4.

[0465] Furthermore, the thickness of the third rib connected to the third-stage second etch surface ES2-3 and the thickness of the fourth rib connected to the fourth-stage second etch surface ES2-4 can also be different from each other. That is, the thickness of the third rib connected to the third-stage second etch surface ES2-3 can be thicker than the thickness of the fourth rib connected to the fourth-stage second etch surface ES2-4.

[0466] The maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can be about 15 μm or less. For example, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can be from about 7 μm to about 10 μm. For example, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can be from about 6 μm to about 9 μm. When the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs exceed about 15 μm, it may be difficult to form OLED deposition patterns with a high resolution of 500 PPI or higher. Additionally, when the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs are less than about 6 μm, it may be difficult to form deposition patterns uniformly.

[0467] Furthermore, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can be different from each other. Specifically, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs can have different values ​​while satisfying the above-mentioned range. More specifically, the maximum thickness T4 measured at the center of the fourth rib can be smaller than the maximum thickness T3 measured at the center of the third rib. Within the above-mentioned range, the maximum thickness T4 measured at the center of the fourth rib can have a smaller value than the maximum thickness T3 measured at the center of the third rib.

[0468] The height of the small surface aperture in the second via VH2 of the deposition mask 100 can be approximately 0.2 to approximately 0.4 times the maximum thicknesses T3 and T4 measured at the centers of the third and fourth ribs. Therefore, the height of the small surface aperture formed on the central portion of the fourth rib can differ from the height of the small surface aperture formed on the central portion of the third rib. Specifically, the height H4 of the small surface aperture formed on the central portion of the fourth rib can be less than the height H3 of the small surface aperture formed on the central portion of the third rib.

[0469] As an example, the maximum thickness measured at the center of the third or fourth rib is about 7 μm to about 9 μm, and the height of the small surface hole located between a surface of the second through hole of the deposition mask 100 and the connecting portion is about 1.4 μm to about 3.5 μm.

[0470] The height H4 of the small surface aperture located at the center of the third rib of the deposition mask 100 can be about 4.0 μm or less. The height H1 of the small surface aperture located at the center of the fourth rib of the deposition mask 100 can be about 3.5 μm or less.

[0471] Preferably, the height H3 of the small surface hole located at the center of the third rib of the second through-hole of the deposition mask 100 can be about 3.5 μm or less. The height H4 of the small surface hole located at the center of the fourth rib of the second through-hole of the deposition mask 100 can be about 2.5 μm or less.

[0472] Preferably, the height H3 of the small surface aperture located at the third rib can be from about 0.1 μm to about 3.4 μm. The height H4 of the small surface aperture located at the fourth rib can be from about 0.1 μm to about 2.4 μm. For example, the height of the small surface aperture V1 located at the third rib of the deposition mask 100 can be from about 0.5 μm to about 3.2 μm. For example, the height of the small surface aperture V1 located at the fourth rib of the deposition mask 100 can be from about 0.5 μm to about 2.2 μm. For example, the height of the small surface aperture located at the central portion of the third rib of the deposition mask 100 can be from about 1 μm to about 3 μm. For example, the height of the small surface aperture located at the central portion of the fourth rib of the deposition mask 100 can be from about 1 μm to about 2 μm. Here, the height can be measured in the thickness measurement direction of the deposition mask 100, i.e., in the depth direction, and the height from one surface of the deposition mask 100 to the connected portion can be measured. When the height between a surface of the deposition mask 100 and the connected portion exceeds approximately 3.5 μm, poor deposition may occur due to a shadowing effect, in which the deposited material diffuses into an area larger than the via area during OLED deposition. Therefore, the height of the small surface aperture located at the central portion of the third rib is set to 3.5 μm or less, and the height of the small surface aperture located at the central portion of the fourth rib is set to 3.0 μm or less.

[0473] Additionally, on the central portion of the third rib, the cross-sectional inclination angle θ corresponding to the interior angle between the flat virtual first line and the virtual second line can be 45 degrees to 55 degrees. The flat virtual first line corresponds to another surface of the deposition mask 100, and the virtual second line connects one end E5 of the third-stage second etched surface ES2-3 of the large surface hole V2 to one end E6 of the connecting portion. On the central portion of the fourth rib, the cross-sectional inclination angle θ corresponding to the interior angle between the flat virtual first line and the virtual third line can be 35 degrees to 45 degrees. The flat virtual first line corresponds to another surface of the deposition mask 100, and the virtual third line connects one end E7 of the fourth-stage second etched surface ES2-4 of the large surface hole V2 to one end E8 of the connecting portion.

[0474] Similarly, like the first via VH1, the large surface aperture of the third via VH3 includes a second etched surface ES2 and a third etched surface ES3. In this case, the third etched surface ES3 of the large surface aperture of the third via VH3 can have the same cross-sectional inclination angle as the third etched surface ES3 of the large surface aperture of the first via VH1. However, the cross-sectional inclination angle of the second etched surface ES2 of the large surface aperture of the third via VH3 can be different from that of the second etched surface ES2 of the large surface aperture of the first via VH1.

[0475] The second etched surface ES2 of the large surface hole of the third through hole VH3 includes a fifth secondary second etched surface ES2-5 and a sixth secondary second etched surface ES2-6 facing each other in the longitudinal direction.

[0476] In this case, the fifth secondary second etched surface ES2-5 is located in the region adjacent to the non-effective portion UA, and the sixth secondary second etched surface ES2-5 is located in the region adjacent to the inner region (which may be referred to as the central region) of the effective portion.

[0477] Furthermore, the fifth secondary second etched surface ES2-5 has a fifth cross-sectional tilt angle, and the sixth secondary second etched surface ES2-6 has a sixth cross-sectional tilt angle. In this case, the fifth and sixth cross-sectional tilt angles can be different from each other. That is, the fifth secondary second etched surface ES2-5 can have a cross-sectional tilt angle different from that of the sixth secondary second etched surface ES2-6. Preferably, the cross-sectional tilt angle of the fifth secondary second etched surface ES2-5 can be greater than that of the sixth secondary second etched surface ES2-6.

[0478] Furthermore, the thickness of the central portion of the fifth rib connected to the fifth secondary second etch surface ES2-5 and the thickness of the central portion of the sixth rib connected to the sixth secondary second etch surface ES2-6 can also be different from each other. That is, the thickness of the central portion of the fifth rib connected to the fifth secondary second etch surface ES2-5 can be greater than the thickness of the central portion of the sixth rib connected to the sixth secondary second etch surface ES2-6.

[0479] The maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs can be about 15 μm or less. For example, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs can be from about 7 μm to about 10 μm. For example, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs can be from about 6 μm to about 9 μm. When the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs exceed about 15 μm, it may be difficult to form OLED deposition patterns with a high resolution of 500 PPI or higher. Additionally, when the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs are less than about 6 μm, it may be difficult to form deposition patterns uniformly.

[0480] Furthermore, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs can be different from each other. Specifically, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs can have different values ​​while satisfying the above-mentioned range. More specifically, the maximum thickness T6 measured at the center of the sixth rib can be smaller than the maximum thickness T5 measured at the center of the fifth rib. Within the above-mentioned range, the maximum thickness T6 measured at the center of the sixth rib can have a smaller value than the maximum thickness T5 measured at the center of the fifth rib.

[0481] The height of the small surface aperture in the third via VH3 of the deposition mask 100 can be approximately 0.2 to approximately 0.4 times the maximum thicknesses T5 and T6 measured at the centers of the fifth and sixth ribs. Therefore, the height of the small surface aperture formed on the sixth rib can differ from the height of the small surface aperture formed on the fifth rib. Specifically, the height H6 of the small surface aperture formed on the sixth rib can be less than the height H5 of the small surface aperture formed on the fifth rib.

[0482] As an example, the maximum thickness measured at the center of the fifth or sixth rib is about 7 μm to about 9 μm, and the height of the small surface hole between a surface of the third through hole of the deposition mask 100 and the connecting portion is about 1.4 μm to about 3.5 μm.

[0483] The height H5 of the small surface aperture located in the central portion of the fifth rib of the deposition mask 100 can be about 4.0 μm or less. The height H6 of the small surface aperture located in the central portion of the sixth rib of the deposition mask 100 can be about 3.5 μm or less. Preferably, the height H5 of the small surface aperture located in the central portion of the fifth rib of the third via of the deposition mask 100 can be about 3.5 μm or less. The height H6 of the small surface aperture located in the central portion of the sixth rib of the third via of the deposition mask 100 can be about 2.5 μm or less.

[0484] Preferably, the height H5 of the small surface aperture located in the central portion of the fifth rib can be from about 0.1 μm to about 3.4 μm. The height H6 of the small surface aperture located in the central portion of the sixth rib can be from about 0.1 μm to about 2.4 μm. For example, the height of the small surface aperture V1 located in the central portion of the fifth rib of the deposition mask 100 can be from about 0.5 μm to about 3.2 μm. For example, the height of the small surface aperture V1 located in the central portion of the sixth rib of the deposition mask 100 can be from about 0.5 μm to about 2.2 μm. For example, the height of the small surface aperture located in the central portion of the fifth rib of the deposition mask 100 can be from about 1 μm to about 3 μm. For example, the height of the small surface aperture located in the central portion of the sixth rib of the deposition mask 100 can be from about 1 μm to about 2 μm. Here, the height can be measured in the thickness measurement direction of the deposition mask 100, i.e., in the depth direction, and the height from one surface of the deposition mask 100 to the connected portion can be measured. When the height between a surface of the deposition mask 100 and the connected portion exceeds approximately 3.5 μm, poor deposition may occur due to a shadowing effect, in which the deposited material diffuses into an area larger than the via area during OLED deposition. Therefore, the height of the small surface aperture located at the central portion of the fifth rib is set to 3.5 μm or less, and the height of the small surface aperture located at the central portion of the sixth rib is set to 3.0 μm or less.

[0485] Additionally, on the central portion of the fifth rib, the cross-sectional inclination angle θ corresponding to the interior angle between the virtual first line and the virtual fourth line can be between 45 degrees and 55 degrees, wherein the virtual fourth line connects one end E9 of the fifth secondary second etched surface ES2-5 of the large surface hole V2 to one end E10 of the connecting portion. On the central portion of the sixth rib, the cross-sectional inclination angle θ corresponding to the interior angle between the virtual first line and the virtual fifth line can be between 35 degrees and 45 degrees, wherein the virtual fifth line connects one end E11 of the sixth secondary second etched surface ES2-6 of the large surface hole V2 to one end E12 of the connecting portion.

[0486] According to the embodiment, the large surface aperture of the via has a first cross-sectional tilt angle in the longitudinal direction and a second cross-sectional tilt angle in the lateral direction that is greater than the first cross-sectional tilt angle. Furthermore, the thickness of the ribs arranged in the longitudinal direction can be increased by the difference between the first and second cross-sectional tilt angles, thereby ensuring the rigidity of the deposition mask. In addition, since the rigidity of the deposition mask is ensured, length deformation can be minimized, and therefore, pattern deposition efficiency can be improved by increasing the uniformity of the mask pattern shape and the position of the vias.

[0487] Additionally, according to the implementation, OLED pixel patterns can be uniformly deposited in all areas, regardless of the location of the vias, by reducing the tilt angle of the large surface apertures of the vias in a direction perpendicular to the moving direction of the organic deposition container.

[0488] The features, structures, effects, etc., described in the above embodiments are included in at least one embodiment of the present invention, but are not limited to only one embodiment. Furthermore, those skilled in the art can combine or modify the features, structures, and effects shown in each embodiment for other embodiments. Therefore, it should be understood that such combinations and modifications are included within the scope of the present invention.

[0489] Furthermore, the above description has focused on embodiments, but is merely illustrative and does not limit the invention. It will be apparent to those skilled in the art that various modifications and applications not shown above are possible without departing from the essential characteristics of these embodiments. For example, elements of the embodiments described herein can be modified and implemented. Moreover, it should be understood that differences relating to such variations and applications are included within the scope of the invention as defined in the appended claims.

Claims

1. A metal plate for manufacturing an organic light-emitting diode deposition mask, the metal plate comprising: A first surface and a second surface, wherein the second surface is opposite to the first surface. The metal plate includes: a plurality of through holes, the plurality of through holes including small surface holes formed from the first surface along the depth direction and large surface holes formed from the second surface along the depth direction and communicating with the small surface holes; and island-shaped portions located on the second surface between the plurality of large surface holes. Wherein, the average centerline surface roughness of the first surface or the second surface of the metal plate in the longitudinal direction and the average centerline surface roughness in the lateral direction are both 0.1 μm to 0.3 μm. The average surface roughness of the first or second surface of the metal plate along the diagonal direction between the longitudinal and lateral directions is 0.1 μm to 0.3 μm. Wherein, the longitudinal direction is the rolling direction of the metal plate. Wherein, the lateral direction is a direction perpendicular to the rolling direction of the metal plate, and The diagonal direction is either the +45-degree direction or the -45-degree direction between the longitudinal direction and the lateral direction.

2. The metal plate according to claim 1, wherein, The average surface roughness along the centerline of the first surface of the metal plate is 0.1 μm to 0.3 μm in both the longitudinal direction and the lateral direction. The average surface roughness of the second surface of the metal plate along the centerline in the longitudinal direction and the average surface roughness along the centerline in the lateral direction are both 0.1 μm to 0.3 μm.

3. The metal plate according to claim 1, wherein, The average surface roughness of the first or second surface of the metal plate at 10 points in the longitudinal direction, the average surface roughness at 10 points in the lateral direction, and the average surface roughness at 10 points in the diagonal direction is between 0.5 μm and 1.5 μm.

4. The metal plate according to any one of claims 1 to 3, wherein, The deviation of the average centerline average surface roughness of the first or second surface of the metal plate in the longitudinal direction from the average centerline average surface roughness in the lateral direction is less than 50%.

5. The metal plate according to claim 4, wherein, The deviation of the average centerline average surface roughness of the first or second surface of the metal plate in the longitudinal direction from the average centerline average surface roughness in the lateral direction is less than 30%.

6. The metal plate according to claim 5, wherein, The deviation of the average surface roughness of the first or second surface of the metal plate along the average centerline in the longitudinal direction from the average surface roughness along the average centerline in the lateral direction is less than 15%.

7. The metal plate according to any one of claims 1 to 3, wherein, The deviation of the average 10-point surface roughness of the first or second surface of the metal plate in the longitudinal direction from the average 10-point surface roughness in the lateral direction is less than 50%.

8. A metal plate for manufacturing an organic light-emitting diode deposition mask, said metal plate comprising: A first surface and a second surface, wherein the second surface is opposite to the first surface. The metal plate includes: a plurality of through holes, the plurality of through holes including small surface holes formed from the first surface along the depth direction and large surface holes formed from the second surface along the depth direction and communicating with the small surface holes; and island-shaped portions located on the second surface between the plurality of large surface holes. Wherein, the deviation of the average centerline average surface roughness of the first surface or the second surface of the metal plate in the longitudinal direction from the average centerline average surface roughness in the lateral direction is less than 50%. Wherein, the longitudinal direction is the rolling direction of the metal plate. Wherein, the lateral direction is a direction perpendicular to the rolling direction of the metal plate, and The diagonal direction is either the +45-degree direction or the -45-degree direction between the longitudinal direction and the lateral direction.

9. The metal plate according to claim 8, wherein, The average centerline surface roughness of each of the first and second surfaces of the metal plate deviates by less than 50% from the average centerline surface roughness in the longitudinal direction relative to the average centerline surface roughness in the lateral direction.

10. The metal plate according to claim 8, wherein, The average surface roughness of the first or second surface of the metal plate is from 0.1 μm to 0.3 μm in each of the average centerline average surface roughness in the longitudinal direction, the average centerline average surface roughness in the lateral direction, and the average centerline average surface roughness in the diagonal direction.

11. The metal plate according to claim 10, wherein, The average surface roughness of the first or second surface of the metal plate at 10 points in the longitudinal direction, the average surface roughness at 10 points in the lateral direction, and the average surface roughness at 10 points in the diagonal direction is between 0.5 μm and 1.5 μm.

12. The metal plate according to any one of claims 8 to 11, wherein, The deviation of the average centerline average surface roughness of the first or second surface of the metal plate in the longitudinal direction from the average centerline average surface roughness in the lateral direction is less than 30%.

13. The metal plate according to any one of claims 8 to 11, wherein, The deviation of the average surface roughness of the first or second surface of the metal plate along the average centerline in the longitudinal direction from the average surface roughness along the average centerline in the lateral direction is less than 15%.

14. The metal plate according to any one of claims 8 to 11, wherein, The deviation of the average 10-point surface roughness of the first or second surface of the metal plate in the longitudinal direction from the average 10-point surface roughness in the lateral direction is less than 50%.

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