Method for manufacturing semiconductor device, substrate processing apparatus, recording medium, and substrate processing method

Abstract

The present invention relates to a semiconductor device manufacturing method, a substrate processing apparatus, a recording medium, and a substrate processing method. The processing uniformity and throughput per substrate are improved. The method includes: (a) a step of carrying a substrate into a processing container; (b) a step of supplying a first gas, which is heated by passing through a first heating section provided in a first gas supply line, to the substrate via a gas supply section to heat the substrate; (c) a step of supplying a second gas, which is a gas flowing through a second gas supply line different from the first gas supply line, to the substrate placed on a substrate placement section in the processing container via the gas supply section; and (d) a step of supplying a third gas, which is lower in temperature than the first gas, to the gas supply section to lower the temperature of the gas supply section between the steps (b) and (c).

Description

Technical Field

[0001] This disclosure relates to methods for manufacturing semiconductor devices, substrate processing apparatus, recording media, and substrate processing methods. Background Technology

[0002] Using a monolithic device that processes substrates one by one, as a step in the manufacturing process of semiconductor devices, the process of supplying gas to the substrate and forming a film on the substrate is sometimes performed (see, for example, Patent Document 1).

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2017-183575 Summary of the Invention

[0004] The purpose of this disclosure is to improve the processing uniformity and throughput of each substrate.

[0005] According to one aspect of this disclosure, the following technology is provided, including:

[0006] (a) The process of transferring a substrate into a processing container;

[0007] (b) A process of heating the substrate by supplying the substrate with a first gas that has been heated by passing through a first heating section provided in a first gas supply line via a gas supply section;

[0008] (c) A process of supplying a second gas to the substrate placed on the substrate mounting section within the processing container via the gas supply section, wherein the second gas is a gas flowing through a second gas supply line different from the first gas supply line.

[0009] (d) Between (b) and (c), a process of supplying a third gas with a temperature lower than that of the first gas to the gas supply unit, thereby reducing the temperature of the gas supply unit.

[0010] According to this disclosure, the processing uniformity and throughput of each substrate can be improved. Attached Figure Description

[0011] Figure 1 This is a schematic configuration diagram of a substrate processing apparatus preferably used in one aspect of this disclosure, and is a diagram showing the processing furnace section in longitudinal cross-section.

[0012] Figure 2 This is a schematic configuration diagram of the controller 280 of the substrate processing apparatus preferred in one aspect of this disclosure, and is a block diagram showing the control system of the controller 280.

[0013] Figure 3 This is a schematic configuration diagram of the main components of a substrate processing apparatus preferably used in a variation of this disclosure, 1.

[0014] Figure 4 This is a schematic configuration diagram of the main components of a substrate processing apparatus that is preferably used in other embodiments of this disclosure.

[0015] Figure 5 This is a schematic configuration diagram of the main components of a substrate processing apparatus that is preferably used in other embodiments of this disclosure.

[0016] Explanation of reference numerals in the attached figures

[0017] 280 Controller (Control Unit)

[0018] 200 wafers (substrates)

[0019] 202 Processing Container

[0020] 212 Substrate mounting stage

[0021] 213, 248e, 259e heaters

[0022] 234 Gas Supply Department

[0023] 248 Gas Supply System No. 1

[0024] 243, 244 Second Gas Supply System Detailed Implementation

[0025] <One way of disclosing this content>

[0026] The following is mainly based on Figure 1 This is one way of explaining the contents of this disclosure. It should be noted that the accompanying drawings used in the following description are all schematic diagrams, and the dimensional relationships and ratios of the elements in the drawings may not necessarily correspond to the actual situation. Furthermore, the dimensional relationships and ratios of elements in multiple drawings may also not be consistent with each other.

[0027] (1) Composition of substrate processing device

[0028] like Figure 1As shown, the substrate processing apparatus 100 includes a processing container 202. The processing container 202 is configured as a closed container, for example, with a circular and flat cross-section. The processing container 202 consists of an upper container 2021 made of a non-metallic material, such as quartz or ceramic, and a lower container 2022 made of a metallic material, such as aluminum (Al) or stainless steel (SUS). Inside the processing container 202, a processing chamber (processing space) 201 is formed on the upper side (the space above the substrate mounting stage 212, which is described later as a substrate mounting section) for processing wafers 200, such as silicon wafers, which serve as substrates. A transfer chamber (transfer space) 203 for transferring wafers 200 is formed in the space surrounded by the lower container 2022 on the lower side. A transfer container 700 is provided adjacent to the lower container 2022 in the processing container 202. The transfer container 700 is provided with a transfer chamber (transfer space) 600 for transferring the wafer 200, and a transfer mechanism 500 such as a transfer robot is provided in the transfer chamber 600.

[0029] A substrate inlet / outlet 206 is provided on the side of the lower container 2022. The substrate inlet / outlet 206 is configured to be opened and closed by a gate valve 205. By opening the gate valve 205, communication can be established between the processing container 202 (transfer space 203) and the transfer container 700 (transfer chamber 600), allowing the wafer 200 to be moved in and out of the transfer space 203 via the transfer mechanism 500. Multiple lifting pins 207 for temporarily supporting the wafer 200 are provided at the bottom of the lower container 2022.

[0030] The processing chamber 201 is equipped with a substrate support (supporter) 210 for supporting the wafer 200. The substrate support 210 mainly includes a substrate mounting surface (substrate mounting plate) 211 for mounting the wafer 200, a substrate mounting stage 212 having the substrate mounting surface 211 on its surface, and a heater 213 serving as a second heating unit disposed within the substrate mounting stage 212. The substrate support 210 also has a temperature measuring terminal 216 for measuring the temperature of the heater 213. The temperature measuring terminal 216 is connected to the temperature measuring unit 221 via wiring 220. It should be noted that the substrate mounting surface (substrate mounting plate) 211 is sometimes referred to as a support.

[0031] On the substrate mounting stage 212, through holes 214 are provided at positions corresponding to the lifting pins 207, allowing the lifting pins 207 to pass through. Wiring 222 for supplying power is connected to the heater 213. The wiring 222 is connected to the heater power control unit 223.

[0032] Temperature measurement unit 221 and heater power control unit 223 are electrically connected to controller 280 (described later). Controller 280 sends control information to heater power control unit 223 based on temperature information measured by temperature measurement unit 221. Heater power control unit 223 controls heater 213 according to the received control information.

[0033] The substrate stage 212 is supported by a shaft 217. The shaft 217 passes through the bottom of the processing container 202 and is connected to the lifting part 218 outside the processing container 202.

[0034] The lifting unit 218 mainly includes a support shaft 218a that supports the shaft 217 and an actuating unit 218b that lifts and / or rotates the support shaft 218a. The actuating unit 218b includes, for example, a lifting mechanism 218c including a motor for lifting and lowering, and a rotating mechanism 218d such as a gear for rotating the support shaft 218a. These components are coated with a lubricant such as grease to ensure smooth operation. It should be noted that if rotation of the support shaft 218a is not required, the rotating mechanism 218d can be omitted. In this case, the actuating unit 218b is configured to lift and lower the support shaft 218a.

[0035] Alternatively, an indicator 218e for instructing the lifting and / or rotation of the actuator 218b can be provided on the lifting section 218 as part of the lifting section 218. In this case, the indicator 218e is electrically connected to the controller 280. Furthermore, in this case, the indicator 218e controls the actuator 218b based on the instructions of the controller 280. Regarding the actuator 218b, as described later, the lifting and lowering movement of the support shaft 218a is controlled so that the substrate stage 212 moves to the wafer transport position ( Figure 1 The dashed lines indicate the location of the substrate stage 212 and the wafer processing location. Figure 1 The position of the substrate stage 212 in the middle.

[0036] By actuating the lifting unit 218, the shaft 217 and the substrate stage 212 are raised and lowered, thereby enabling the substrate stage 212 to raise and lower the wafer 200 placed on the substrate mounting surface 211. It should be noted that the lower end of the shaft 217 is covered by a bellows 219, thereby keeping the processing chamber 201 airtight.

[0037] When the wafer 200 is being transported, the substrate mounting stage 212 lowers the substrate mounting surface 211 to the position of the substrate loading / unloading outlet 206 (wafer transport position). When the wafer 200 is being processed, the wafer 200 is raised to the processing position in the processing chamber 201 (wafer processing position).

[0038] When the substrate stage 212 is lowered to the wafer transport position, the upper end of the lifting pin 207 protrudes from the upper surface of the substrate mounting surface 211, so that the lifting pin 207 can support the wafer 200 from below (see reference). Figure 1 (The dashed line indicates the substrate stage 212 and the dotted line indicates the wafer 200). Furthermore, when the substrate stage 212 is raised to the wafer processing position while the wafer 200 is supported by the lifting pin 207, the lifting pin 207 is buried relative to the upper surface of the substrate mounting surface 211 during the raising of the substrate stage 212, so that the substrate mounting surface 211 supports the wafer 200 from below.

[0039] A cluster nozzle 230, serving as a gas dispersion mechanism, is provided at the upper part (upstream side of the airflow) of the processing chamber 201, opposite to the substrate mounting surface 211. The cover 231 of the cluster nozzle 230 is, for example, made of a metal with electrical and thermal conductivity. It should be noted that, for ease of explanation in the following description, the upstream side of the airflow in the gas-flowable space will also be simply referred to as the upstream side. Furthermore, for ease of explanation in the following description, the downstream side of the airflow in the gas-flowable space will also be simply referred to as the downstream side.

[0040] Furthermore, a through hole 231a is provided in the cover 231 of the cluster nozzle. A gas supply pipe 241 is inserted into the through hole 231a. The gas supply pipe 241 inserted into the through hole 231a has a tip portion 241a inserted into the cluster nozzle 230 and a flange 241b fixed to the cover 231. The gas supply pipe 241 has the function of dispersing the gas supplied to the space formed in the cluster nozzle 230, i.e., the cluster nozzle buffer chamber 232. The tip portion 241a of the gas supply pipe 241 is configured as, for example, cylindrical, and a dispersion hole is provided on the side of the cylinder. The gas supplied from the gas supply pipe 241 is supplied into the cluster nozzle buffer chamber 232 through the dispersion hole provided in the tip portion 241a.

[0041] Furthermore, the cluster ejector 230 has a gas supply section 234 for supplying gas from the gas supply system described later to the wafer 200. The cluster ejector buffer chamber 232 is located upstream of the gas supply section 234, and the processing chamber 201 is located downstream of the gas supply section 234. The gas supply section 234 is disposed above the substrate mounting surface 211, opposite to the substrate mounting surface 211. The gas supply section 234 has a plurality of through holes 234b serving as second gas supply ports. Each through hole 234b is formed by a cylindrical structure (cylindrical portion) 234d. Each cylindrical structure 234d is provided to penetrate the upper wall 234e of the gas supply section 234. The upstream side of the cylindrical structure 234d communicates with the cluster ejector buffer chamber 232, and the downstream side communicates with the processing chamber 201. Therefore, the cluster head buffer chamber 232 is connected to the processing chamber 201 through a plurality of through holes 234b provided in the gas supply section 234.

[0042] The region enclosed by the upper wall 234e and the side wall 234f, which are opposite to the substrate mounting surface 211, constitutes the gas supply section 234 and forms a buffer space 233. The buffer space 233 is configured as part of the gas supply section 234.

[0043] The gas supply section 234 has a plurality of through holes 234a serving as first gas supply ports, adjacent to the through holes 234b. Each through hole 234a is composed of a cylindrical structure (cylindrical portion) 234g. Each cylindrical structure 234g is arranged to protrude into the buffer space 233. The upstream side of the cylindrical structure 234g communicates with the buffer space 233, and the downstream side communicates with the processing chamber 201. Therefore, the buffer space 233 communicates with the processing chamber 201 through the through holes 234a provided in the gas supply section 234.

[0044] A common gas supply pipe 242 is connected to the gas supply pipe 241 inserted into the through hole 231a. The interiors of the gas supply pipe 241 and the common gas supply pipe 242 are in communication with each other. And, through these structures, the gas supplied from the common gas supply pipe 242 is supplied to the cluster head 230 through the gas supply pipe 241 and the through hole 231a.

[0045] Gas supply pipes 243a, 244a, and 245a are connected to the common gas supply pipe 242. Among them, gas supply pipe 244a is connected to the common gas supply pipe 242 via a remote plasma unit (RPU) 244e, which serves as a plasma generator (plasma source).

[0046] In gas supply pipes 243a, 244a, and 245a, gas supply sources 243b, 244b, and 245b are provided in sequence from the upstream side of the gas flow, MFC (mass flow controller) 243c, 244c, and 245c as flow controllers, and valves 243d, 244d, and 245d as on / off valves.

[0047] The downstream ends of gas supply pipes 246a and 247a are connected to the downstream sides of the valves 243d and 244d of gas supply pipes 243a and 244a, respectively. Gas supply sources 246b and 247b, MFCs 246c and 247c, and valves 246d and 247d (acting as on / off valves) are sequentially provided on the upstream side of gas supply pipes 246a and 247a, respectively. Gas supply pipes 243a to 247a are, for example, made of a metal material such as SUS.

[0048] Raw material gas is supplied from gas supply source 243b to cluster nozzle 230 via MFC 243c, valve 243d, gas supply pipe 243a, common gas supply pipe 242, gas supply pipe 241, and through hole 231a.

[0049] Reactant gas is supplied from gas supply source 244b to cluster head 230 via MFC 244c, valve 244d, gas supply pipe 244a, RPU 244e, common gas supply pipe 242, gas supply pipe 241, and through hole 231a. At this time, the reactant gas is excited into a plasma state by RPU 244e and supplied to the wafer 200 in processing chamber 201 via common gas supply pipe 242, gas supply pipe 241, through hole 231a, and cluster head 230.

[0050] Inactive gas and cleaning gas are supplied to the cluster nozzle 230 from gas supply source 245b via MFC 245c, valve 245d, gas supply pipe 245a, common gas supply pipe 242, gas supply pipe 241, and through hole 231a. When processing wafer 200, inactive gas is mainly supplied from gas supply source 245b; when cleaning the cluster nozzle 230 and processing chamber 201, cleaning gas is mainly supplied from gas supply source 245b. The inactive gas functions as a purge gas to remove gases and residual gases retained in processing container 202 (processing chamber 201) and cluster nozzle 230. Furthermore, the inactive gas sometimes also functions as a dilution gas to dilute other gases and as a carrier gas to facilitate gas flow. Halogen-based gases, such as fluorine (F)-containing gases, can be used as cleaning gases.

[0051] Inactive gas is supplied from gas supply source 246b to the cluster nozzle 230 via MFC 246c, valve 246d, gas supply pipe 246a, common gas supply pipe 242, gas supply pipe 241, and through hole 231a. The inactive gas functions as a purge gas, carrier gas, dilution gas, etc.

[0052] Inactive gas is supplied from gas supply source 247b to the cluster nozzle 230 via MFC 247c, valve 247d, gas supply pipe 247a, RPU 244e, common gas supply pipe 242, gas supply pipe 241, and through hole 231a. The inactive gas functions as a purge gas, carrier gas, dilution gas, etc.

[0053] The raw material gas supply system 243 mainly consists of gas supply pipe 243a, MFC 243c, and valve 243d. Gas supply source 243b can be considered as an integral part of the raw material gas supply system 243. The first inactive gas supply system mainly consists of gas supply pipe 246a, MFC 246c, and valve 246d. Gas supply source 246b can be considered as an integral part of the first inactive gas supply system. The reaction gas supply system 244 mainly consists of gas supply pipe 244a, MFC 244c, and valve 244d. Gas supply source 244b can be considered as an integral part of the reaction gas supply system 244. The second inactive gas supply system mainly consists of gas supply pipe 247a, MFC 247c, and valve 247d. Gas supply source 247b can be considered as an integral part of the second inactive gas supply system. The gas supply system 245 mainly consists of gas supply pipe 245a, MFC 245c, and valve 245d. The gas supply source 245b can be considered as being included in the gas supply system 245.

[0054] It should be noted that the first inactive gas supply system, gas supply pipe 241, and common gas supply pipe 242 can be considered as included in the raw material gas supply system 243. Furthermore, the second inactive gas supply system, RPU 244e, gas supply pipe 241, and common gas supply pipe 242 can be considered as included in the reaction gas supply system 244.

[0055] The raw material gas and the reactant gas, or both of them, are also referred to as the processing gas or the second gas. Similarly, the raw material gas supply system 243 and the reactant gas supply system 244, or both of them, are also referred to as the processing gas supply system, the second gas supply system, or the second gas supply line. It should be noted that inactive gases are non-reactive gases, while the processing gases (raw material gas and reactant gas) are reactive gases; therefore, the processing gas is also referred to as the reactive gas. Furthermore, in the case where a film is formed by the processing gas, the processing gas is also referred to as the film-forming gas.

[0056] A gas inlet hole for supplying gas into the buffer space 233 is provided on the upper wall 234e of the gas supply section 234. A gas supply pipe 236 is connected to the gas inlet hole. A gas supply pipe 248a is connected to the gas supply pipe 236. From the upstream side of the airflow, a gas supply source 248b, an MFC 248c, a valve 248d, and a heater 248e, which serves as the first heating section, are sequentially provided on the gas supply pipe 248a.

[0057] The first gas is supplied from gas supply source 248b to buffer space 233 via MFC 248c, valve 248d, gas supply pipe 248a, heater 248e, and gas supply pipe 236. The heater 248e is configured to heat the passing first gas to a predetermined temperature according to the instruction of controller 280. Hereinafter, for ease of explanation, such heated gas will also be referred to as heated gas. As the first gas, at least one of the following can be used, for example, nitrogen (N2) gas, inert gas such as helium (He) gas, and hydrogen (H2) gas. In this embodiment, the use of, for example, an inert gas as the first gas will be described.

[0058] The first gas supply system 248 mainly consists of gas supply pipe 248a, MFC 248c, and valve 248d. The gas supply source 248b, heater 248e, and gas supply pipe 236 can be considered as included within the first gas supply system 248. The first gas supply system 248 is also referred to as the first gas supply line.

[0059] A temperature measuring unit 249 is provided in the heater 248e to measure the temperature of the heater 248e. Furthermore, a heater control unit 250 is connected to the heater 248e to control the heater 248e. The heater 248e is controlled by a controller 280 via the heater control unit 250.

[0060] A gas inlet hole for supplying gas into the buffer space 233 is provided on the side wall 234f of the gas supply section 234. A gas supply pipe 258a is connected to the gas inlet hole. A gas supply source 258b, an MFC 258c, and a valve 258d are provided on the gas supply pipe 258a from the upstream side of the airflow.

[0061] A third gas is supplied from gas supply source 258b to buffer space 233 via MFC 258c, valve 258d, gas supply pipe 258a, etc. The third gas can be at least one of the following: inert gas such as N2 gas, He gas, H2 gas, diluted H2 gas, or activated H2 gas. In this embodiment, the use of, for example, an inert gas as the third gas will be described.

[0062] The third gas supply system 258 mainly consists of gas supply pipe 258a, MFC 258c, and valve 258d. The gas supply source 258b can be considered as an integral part of the third gas supply system 258. The third gas supply system 258 is also referred to as the third gas supply pipeline.

[0063] A gas inlet hole for supplying gas to the transfer space 203 is provided on the side of the lower container 2022. A gas supply pipe 256 is connected to the gas inlet hole. A gas supply pipe 259a is connected to the gas supply pipe 256. A gas supply source 259b, an MFC 259c, a valve 259d, and a heater 259e serving as a fourth heating unit are provided on the gas supply pipe 259a from the upstream side of the airflow.

[0064] A fourth gas is supplied from gas supply source 259b into transfer space 203 via MFC 259c, valve 259d, gas supply pipe 259a, heater 259e, and gas supply pipe 256. The fourth gas can be at least one of the following: inert gas such as N2, He, H2, diluted H2, or activated H2. In this embodiment, the use of, for example, an inert gas as the fourth gas will be described. The heater 259e is configured to heat the passing inert gas to a predetermined temperature according to the instruction of controller 280.

[0065] The fourth gas supply system 259 mainly consists of gas supply pipe 259a, MFC 259c, and valve 259d. The gas supply source 259b, heater 259e, and gas supply pipe 256 can be considered as included within the fourth gas supply system 259. The fourth gas supply system 259 is also referred to as the fourth gas supply line.

[0066] The exhaust section for venting the atmosphere inside the processing container 202 has multiple exhaust pipes connected to the processing container 202. Specifically, the exhaust section has an exhaust pipe 261 connected to the transfer space 203, an exhaust pipe 262 connected to the processing chamber 201, and an exhaust pipe 263 connected to the buffer space 233. In addition, an exhaust pipe 264 is connected to the downstream end of each of the exhaust pipes 261, 262, and 263.

[0067] An exhaust port for venting the atmosphere within the transfer space 203 is provided on the side of the lower container 2022. An exhaust pipe 261 is connected to this exhaust port. A TMP (Turbo Molecular Pump) 265 is connected to the exhaust pipe 261 as a vacuum pump to achieve high vacuum or ultra-high vacuum. Valves 266 and 267, serving as on / off valves, are respectively provided on the upstream and downstream sides of the TMP 265 in the exhaust pipe 261.

[0068] An exhaust vent is provided on the side of the processing chamber 201 to exhaust the atmosphere inside the processing chamber 201. An exhaust pipe 262 is connected to this exhaust port. An APC (Auto Pressure Controller) 276, which acts as a pressure controller to maintain a specified pressure inside the processing chamber 201, is provided on the exhaust pipe 262. The APC 276 has an adjustable valve body, configured to adjust the flow within the exhaust pipe 262 by adjusting the opening of the valve body according to an instruction from the controller 280. Furthermore, valves 275 and 277, which act as on / off valves, are provided on the upstream and downstream sides of the APC 276 in the exhaust pipe 262, respectively.

[0069] An exhaust port for venting the atmosphere in the buffer space 233 is provided on the upper wall 234e of the gas supply section 234. An exhaust pipe 263 is connected to the exhaust port. A TMP 295 is provided in the exhaust pipe 263. Valves 296 and 297, which serve as on / off valves, are provided on the upstream and downstream sides of the TMP 295 in the exhaust pipe 263, respectively.

[0070] A DP (Dry Pump) 278 is connected to exhaust pipe 264. More specifically, exhaust pipes 263, 262, and 261 are connected upstream of exhaust pipe 264, and DP 278 is connected downstream. DP 278 exhausts the atmosphere from buffer space 233, processing chamber 201, and transfer space 203 via the respective exhaust pipes of exhaust pipes 263, 262, and 261. Furthermore, DP 278 also functions as an auxiliary pump when TMPs 265 and 295 are operating. That is, since TMPs 265 and 295, as high vacuum (or ultra-high vacuum) pumps, cannot easily exhaust to atmospheric pressure on their own, DP 278 is used as an auxiliary pump for exhausting to atmospheric pressure.

[0071] like Figure 1 As shown, the substrate processing apparatus 100 has a controller 280 that controls the operation of each part of the substrate processing apparatus 100.

[0072] like Figure 2 As shown, the controller 280, which serves as the control unit (control component), is configured as a computer equipped with a CPU (Central Processing Unit) 280a, RAM (Random Access Memory) 280b, a storage device 280c, and an I / O port 280d. The RAM 280b, storage device 280c, and I / O port 280d are configured to exchange data with the CPU 280a via an internal bus 280e. The controller 280 is configured to allow connection to input / output devices such as a touch panel 289 and an external storage device 288.

[0073] The storage device 280c is composed of, for example, flash memory, HDD (Hard Disk Drive), or SSD (Solid State Drive). Within the storage device 280c, a control program that controls the operation of the substrate processing apparatus 100, and a processing procedure that describes the substrate processing steps and conditions (described later), are stored in a readable manner. The processing procedure is a combination of steps in the substrate processing described later, executed by the controller 280, to obtain a predetermined result, and functions as a program. Hereinafter, the processing procedure, control program, etc., will also be referred to simply as a program. Furthermore, the processing procedure will be referred to simply as a process. In this specification, the term "program" is used in cases where only a process is included, cases where only a control program is included, or cases where both are included. RAM 280b is configured as a memory area (working area) that temporarily holds programs, data, etc., read by the CPU 280a.

[0074] I / O port 280d connects to gate valve 205, conveying mechanism 500, lifting unit 218, APC276, TMP265, 295, DP278, RPU244e, MFC243c, 244c, 245c, 246c, 247c, 248c, 258c, 259c, valves 243d, 244d, 245d, 246d, 247d, 248d, 258d, 259d, 266, 267, 275, 277, 296, 297, heaters 213, 248e, 259e, etc.

[0075] CPU 280a is configured to read and execute control programs from storage device 280c, and to read process data from storage device 280c based on input commands from input / output device 289. CPU 280a is configured to control the following actions according to the read process data: opening and closing of gate valve 205, wafer 200 transport using transport mechanism 500, lifting of substrate stage 212 using lifting unit 218, pressure regulation within processing chamber 201 based on APC 276, opening and closing control of TMP 265 and 295, opening and closing control of DP 278, and opening and closing control of plasma based on RPU 244e. Various gas flow regulation actions using MFC243c, 244c, 245c, 246c, 247c, 248c, 258c, and 259c; opening and closing control of valves 243d, 244d, 245d, 246d, 247d, 248d, 258d, 259d, 266, 267, 275, 277, 296, and 297; opening and closing control and temperature regulation actions of heaters 213, 248e, and 259e, etc.

[0076] The controller 280 is configured to install the aforementioned program stored in the external storage device 288 into a computer. The external storage device 288 includes, for example, a hard disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, a USB memory, and a semiconductor memory such as an SSD. The storage device 280c and the external storage device 288 are configured in the form of a recording medium that can be read by a computer. Hereinafter, they will also be referred to collectively as recording media. In this specification, the term "recording medium" includes cases where only the storage device 280c is included, cases where only the external storage device 288 is included, or cases where both are included. It should be noted that the program can also be provided to the computer without using the external storage device 288, but using communication means such as the Internet or a dedicated line.

[0077] (2) Substrate treatment

[0078] Using the substrate processing apparatus 100 described above, the process sequence for forming a thin film on a wafer 200, which serves as a substrate, within a processing container 202 will be explained as a step in the manufacturing process of a semiconductor device. In the following description, the operation of each part constituting the substrate processing apparatus 100 is controlled by a controller 280.

[0079] The processing sequence in this method includes the following steps:

[0080] Step a: The wafer 200 is moved into the processing container 202;

[0081] Step b involves supplying a first gas to the wafer 200 via the gas supply unit 234 and heating the wafer 200. The first gas is a gas that is heated by passing through a heater 248e provided in the first gas supply system 248.

[0082] Step c, a second gas, which flows through a second gas supply system different from the first gas supply system 248, is supplied to the wafer 200 mounted on the substrate stage 212 within the processing container 202 via the gas supply unit 234.

[0083] Step d: Between steps b and c, a third gas with a temperature lower than that of the first gas is supplied to the gas supply unit 234, thereby reducing the temperature of the gas supply unit 234.

[0084] In the processing sequence of this method, as an example, step e is performed: before step c, the wafer 200 is held in a state on the substrate stage 212, and the wafer 200 is heated from the back side by heat conduction from the substrate stage 212 heated by the heater 213.

[0085] Furthermore, in the processing sequence of this method, as an example, step f is performed: before step a, the gas supply section 234 is heated by radiation (also called emission) from the substrate stage 212 heated by the heater 213. It should be noted that when the substrate stage 212 is made of quartz, ceramic, or the like, which are transparent to light (electromagnetic waves), the radiation from the heater 213 passes through the substrate stage 212 and is conducted to the gas supply section 234, thus heating the gas supply section 234. Therefore, in this case, the gas supply section 234 is heated by radiation from the heater 213, radiation from the substrate stage 212 heated by the heater 213, etc.

[0086] Furthermore, in the processing sequence of this method, as an example, step g is performed: between step a and step b, with the wafer 200 contained in the transfer space 203 provided in the processing container 202, a fourth gas that has been heated by passing through the heater 259e provided in the fourth gas supply system 259 is supplied to the wafer 200, thereby heating the wafer 200.

[0087] Furthermore, in the processing sequence of this method, as an example, step h is performed: after step c, a third gas is supplied to the wafer 200 to cool the wafer 200.

[0088] It should be noted that the following explanation focuses on examples of forming nitride films. Here, nitride films include not only silicon nitride films (SiN films) but also nitride films containing carbon (C), oxygen (O), boron (B), etc. Specifically, nitride films include: silicon nitride films (SiN films), silicon carbonitride films (SiCN films), silicon oxynitride films (SiON films), silicon oxygen carbonitride films (SiOCN films), silicon boron carbonitride films (SiBCN films), silicon boron nitride films (SiBN films), silicon boron oxygen carbonitride films (SiBOCN films), and silicon boron oxynitride films (SiBON films). The following explanation focuses on examples of SiN films formed as nitride films.

[0089] Hereinafter, as described above, the raw material gas and the reactant gas are sometimes referred to as the second gas. Furthermore, in step b, an example will be described where the cycle of supplying the raw material gas to the wafer 200 and the reactant gas to the wafer 200 is performed a predetermined number of times (m times, where m is an integer greater than or equal to 1). It should be noted that the steps of supplying the raw material gas and the steps of supplying the reactant gas can be performed alternately, i.e., not simultaneously; alternatively, these steps can be performed simultaneously. An example of alternating these steps will be described below. In this specification, for ease of explanation, such a gas supply sequence is shown below. The same description will also be used in the following descriptions of other methods, variations, etc.

[0090] (raw material gas → reactant gas) × m

[0091] In this specification, the term "wafer" is used to refer to both the wafer itself and a laminate of the wafer with a specified layer or film formed on its surface. The term "surface of the wafer" is used to refer to both the surface of the wafer itself and the surface of a specified layer, etc., formed on the wafer. The phrase "forming a specified layer on the wafer" includes both forming the specified layer directly on the surface of the wafer itself and forming the specified layer on top of a layer, etc., formed on the wafer. The term "substrate" is used in the same way as "wafer."

[0092] (Heating process in the gas supply department: step f)

[0093] Heaters 213, 248e, and 259e are turned off, and heating and temperature control of the object using heaters 213, 248e, and 259e begins. Here, the set temperature of heaters 248e and 259e is, for example, 50 to 500°C, preferably in the range of 100 to 400°C. Furthermore, the set temperature of heater 213 is, for example, 10 to 500°C, preferably in the range of 20 to 300°C. After the temperatures of heaters 213, 248e, and 259e stabilize, the substrate stage 212 is lowered to the wafer 200 transport position (wafer transport position), and the lifting pin 207 passes through the through hole 214 of the substrate stage 212. In parallel with these actions, the atmosphere in the transfer space 203 is vented, so that the pressure in the transfer space 203 is the same as or lower than the pressure in the transfer chamber 600. At this time, the gas supply section 234 is heated from below by radiation from the heater 213 and radiation from the substrate stage 212 after it has been heated by the heater 213. Since the gas supply section 234 has a large heat capacity and requires time to reach the required temperature, it is preferable to preheat it before step a described later. It should be noted that in step f, the temperatures of the heaters 213, 248e, and 259e after heating are maintained in the subsequent steps. Furthermore, it is preferable that the distance between the gas supply section 234 and the substrate stage 212 in step f is closer (shorter) than the distance between the gas supply section 234 and the substrate stage 212 in step c described later. It should be noted that shortening the distance between the gas supply section 234 and the substrate stage 212 results in a configuration where... Figure 1The substrate stage 212 shown has an outer periphery that does not contact the components inside the processing container 202. It should be noted that in step f, an inactive gas, the first gas, and the fourth gas can be supplied from the gas supply system 245, the first gas supply system 248, and the fourth gas supply system 259 to the processing chamber 201 and the transfer space 203, respectively. Furthermore, step f can be performed with one of the heaters 248e and 259e turned off. For example, processing can be performed with heater 248e on and heater 259e off.

[0094] (Substrate transfer process: Step a)

[0095] Next, the gate valve 205 is opened to connect the transfer space 203 with the transport chamber 600. Then, the wafer 200 is moved from the transport chamber 600 into the transfer space 203 using the transport mechanism 500 located in the transport chamber 600.

[0096] (Substrate heating process: step g)

[0097] Subsequently, an inactive gas, a first gas, and a fourth gas are supplied to the processing chamber 201 and the transfer space 203, respectively, from the gas supply system 245, the first gas supply system 248, and the fourth gas supply system 259. In parallel with this, the atmosphere in the processing chamber 201 and the transfer space 203 is exhausted through the exhaust pipe 261. The first gas and the fourth gas supplied from the first gas supply system 248 and the fourth gas supply system 259 are heated by heaters 248e and 259e, respectively, and supplied to the processing chamber 201 and the transfer space 203, and exhausted through the exhaust pipe 261. At this time, the heated first gas and the fourth gas are supplied to the wafer 200 in the transfer space 203, and these gases come into contact with the wafer 200. Thus, the wafer 200 in the transfer space 203 is heated (preheated). Here, the set temperature of heaters 248e and 259e when heating the wafer 200 is, for example, 50 to 500°C, preferably in the range of 100 to 400°C. It should be noted that step g is not necessarily required and can be omitted. For example, if it is desired to shorten the heating (preheating) time required for the wafer 200, step g can be performed before step b. Furthermore, the supply amount (supply flow rate) of the inactive gas from the gas supply system 245 only needs to be sufficient to suppress the intrusion of other gases from the processing chamber 201 into the gas supply system 245.

[0098] (Substrate heating / substrate radiation heating process: step b)

[0099] The wafer 200 is moved into the transfer space 203 by the transfer mechanism 500 and held above the lifting pin 207. Then, the transfer mechanism 500 is lowered, thereby placing the wafer 200 on the lifting pin 207. Subsequently, the transfer mechanism 500 is moved out of the transfer space 203, and the substrate inlet / outlet 206 is closed by the gate valve 205. Thus, the wafer 200 is held on the lifting pin 207 within the transfer space 203.

[0100] In step b, following step g, the supply of inactive gas from the gas supply system 245 continues, but the supply of inactive gas from the gas supply system 245 is stopped after the substrate is moved into the loading outlet 206 by the gate valve 205.

[0101] Furthermore, in step b, following step g, the supply of the first gas and the fourth gas from the first gas supply system 248 and the fourth gas supply system 259 to the wafer 200 in the transfer space 203 continues. Additionally, the atmosphere in the processing chamber 201 and the transfer space 203 is continuously vented through the exhaust pipe 261.

[0102] Specifically, in step b, valves 248d and 259d are kept open, and the first gas and the fourth gas flow into gas supply pipes 248a and 259a, respectively. The flow rates of the first gas and the fourth gas are regulated by MFCs 248c and 259c, respectively, and heated by heaters 248e and 259e. They are then supplied to the processing chamber 201 and the transfer space 203 via gas supply pipes 236 and 256, and exhausted through exhaust pipe 261. At this time, the heated first gas and the heated fourth gas are supplied to the wafer 200 in the transfer space 203, and these gases come into contact with the wafer 200. Thus, the wafer 200 in the transfer space 203 is heated. Here, the set temperature of the heaters 248e and 259e for heating the wafer 200 is, for example, 50 to 500°C, preferably in the range of 100 to 400°C.

[0103] As an example of the processing condition for step b, see below:

[0104] Processing temperature: 10–500℃, preferably 20–300℃

[0105] Processing pressure: 10–13333 Pa, preferably 100–10000 Pa

[0106] The first gas supply flow rate is 0.0001–100 slm, preferably 0.001–10 slm.

[0107] First gas supply time: 1–300 seconds, preferably 5–60 seconds.

[0108] The fourth gas supply flow rate is 0.0001–100 slm, preferably 0.001–5 slm.

[0109] The fourth gas supply time is 0.1–300 seconds, preferably 5–60 seconds.

[0110] Inactive gas supply flow rate: 0.0001–100 slm, preferably 0.001–5 slm.

[0111] Inactive gas supply time: 0.1–150 seconds, preferably 2–30 seconds.

[0112] The processing temperature shown here refers to the temperature of wafer 200, that is, the preheating target temperature of wafer 200.

[0113] It should be noted that the numerical range expressions such as "10~500℃" in this specification include both the lower and upper limits. Therefore, for example, "10~500℃" means "above 10℃ and below 500℃". The same applies to other numerical ranges. Furthermore, the processing temperature in this specification refers to the temperature of the wafer 200 or the temperature inside the processing chamber 201, and the processing pressure refers to the pressure inside the processing chamber 201. Additionally, a gas supply flow rate of 0 slm indicates that the gas is not supplied. These same points apply in the following descriptions.

[0114] Examples of rare gases that can be used as the first gas, fourth gas, or inert gas include nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe). More than one of these can be used as the first gas, fourth gas, or inert gas. It should be noted that the types of inert gases used in other steps can also be the same as those described herein.

[0115] In step b, the first gas supplied from the first gas supply system 248 is heated by the heater 248e and supplied to the wafer 200 via the buffer space 233 (gas supply section 234), contacting the surface of the wafer 200. Thus, the wafer 200 is heated from above (surface side). Furthermore, the wafer 200 is held in a floating state on the lifting pin 207, not on the substrate stage 212, and is therefore heated by radiation from the heater 213 built into the substrate stage 212, and from the substrate stage 212 heated by the heater 213. Thus, the wafer 200 is also heated from below (back side). Furthermore, since the wafer 200 is placed on the lifting pin 207, the fourth gas supplied from the fourth gas supply system 259 and heated by the heater 259e also detours into the space between the wafer 200 and the substrate stage 212, contacting the back side of the wafer 200. Thus, the wafer 200 is further heated from below (back side). In this way, the wafer 200 is heated from both sides. In addition, at this time, the gas supply section 234 is also heated from below by radiation from the heater 213, radiation from the substrate stage 212 heated by the heater 213, radiation from the heated wafer 200, etc.

[0116] (Substrate thermal conduction heating process: step e)

[0117] Subsequently, the substrate stage 212 is raised, and the wafer 200 placed on the lifting pin 207 is lifted by the substrate stage 212 and placed on the substrate mounting surface 211. The substrate stage 212 is then raised to the wafer processing position (wafer processing position) shown in the figure. During the period from the wafer transport position to the wafer processing position, a heated first gas is continuously supplied from the first gas supply system 248 to heat the wafer 200 from above (surface side). At this time, a heated fourth gas is also continuously supplied from the fourth gas supply system 259. Furthermore, since the wafer 200 is placed on the substrate mounting surface 211, it is heated from below (back side) through heat conduction from the substrate stage 212 heated by the heater 213.

[0118] (Cooling process in the gas supply department: step d)

[0119] After step b and before step c (film formation process) described later, a third gas with a temperature lower than that of the first gas is supplied from the third gas supply system 258 into the buffer space 233.

[0120] Specifically, valve 258d is opened, allowing the third gas to flow into the gas supply pipe 258a. The flow rate of the third gas is regulated by MFC 258c and supplied to the buffer space 233, where it is then exhausted through the exhaust pipe 263. At this time, the third gas diffuses within the buffer space 233, coming into contact with the upper wall 234e, side walls 234f, and other components constituting the buffer space 233.

[0121] As an example of a processing condition in step d, the following is an example:

[0122] Processing temperature: 50–1000℃, preferably 300–600℃

[0123] Processing pressure: 10–13333 Pa, preferably 20–1000 Pa

[0124] The third gas supply flow rate is 0.0001–100 slm, preferably 0.001–10 slm.

[0125] The third gas supply time is 0.1–300 seconds, preferably 1–60 seconds.

[0126] The processing temperature here refers to the temperature of wafer 200, that is, the temperature of wafer 200 when step d is performed after steps g, b, and e. It can be set to a temperature close to the processing temperature in step c (film formation process) described later, or the same as the processing temperature in step c.

[0127] Under the aforementioned processing conditions, a third gas with a temperature lower than that of the first gas is supplied to the buffer space 233, thereby reducing the temperature of the gas supply section 234. Therefore, in step c (film formation process) described later, it is possible to prevent the second gas from being overheated by the gas supply section 234, thus preventing unexpected decomposition. Here, the temperature of the gas supply section 234 is reduced to a temperature range where the properties of the second gas do not change significantly. The lower limit of the temperature range can be set to a temperature at which the second gas is less likely to condense, liquefy (solidify), etc. The upper limit of the temperature range can be set to a temperature at which the second gas is less likely to decompose. For example, in step d, the gas supply section 234 can be cooled to a temperature range of 100–600°C, preferably 200–400°C. By cooling the gas supply section 234 to such a temperature, it is possible to suppress significant changes in the properties (reactivity) of the second gas due to unexpected decomposition, condensation, liquefaction (solidification), etc.

[0128] It should be noted that in step d, it is preferable to exhaust the atmosphere in the buffer space 233 using the exhaust pipe 263 in parallel with the supply of the third gas into the buffer space 233. This avoids supplying the low-temperature third gas to the preheated wafer 200, thus preventing the temperature of the preheated wafer 200 from dropping.

[0129] (Film formation treatment: step c)

[0130] Subsequently, as step c, steps c1 and c2 are executed sequentially.

[0131] [Step c1]

[0132] In step c1, a raw material gas, which serves as the second gas, is supplied to the wafer 200 in the processing chamber 201.

[0133] Specifically, valve 243d is opened, allowing raw material gas to flow into gas supply pipe 243a. The flow rate of the raw material gas is regulated by MFC 243c and supplied to processing chamber 201 via common gas supply pipe 242, gas supply pipe 241, cluster head buffer chamber 232, and gas supply section 234 (through hole 234b), and is exhausted through exhaust pipe 262. At this time, raw material gas is supplied to wafer 200 (raw material gas supply). At this time, valves 246d and 247d can be opened to supply inactive gas into processing chamber 201 from gas supply pipes 246a and 247a, respectively.

[0134] As an example of the processing condition in step c1, the following is an example:

[0135] Processing temperature: 50–1000℃, preferably 300–800℃

[0136] Processing pressure: 10–1000 Pa, preferably 20–100 Pa

[0137] Raw material gas supply flow rate: 0.0001~100 slm, preferably 0.001~10 slm

[0138] Raw material gas supply time: 0.1–120 seconds, preferably 1–60 seconds, more preferably 1–30 seconds.

[0139] Inactive gas supply flow rate (per gas supply tube): 0–100 slm, preferably 0.0001–20 slm, more preferably 0.01–10 slm

[0140] Under the aforementioned processing conditions, a chlorosilane-based gas is supplied to the wafer 200 as a raw material gas to form a Si-containing layer containing Cl on the outermost surface of the wafer 200, which serves as a substrate. The Si-containing layer containing Cl is formed through physical adsorption and chemisorption of molecules of the chlorosilane-based gas on the outermost surface of the wafer 200; physical adsorption and chemisorption of molecules of substances obtained from the partial decomposition of the chlorosilane-based gas; and deposition of Si due to the thermal decomposition of the chlorosilane-based gas. The Si-containing layer containing Cl can be an adsorption layer (physical adsorption layer, chemisorption layer) of molecules of the chlorosilane-based gas and molecules of substances obtained from the partial decomposition of the chlorosilane-based gas, or it can be a deposited layer of Si containing Cl. In this specification, the Si-containing layer containing Cl is also simply referred to as a Si-containing layer.

[0141] After the Si-containing layer is formed, valve 243d is closed to stop the supply of raw material gas to the processing chamber 201. Then, a vacuum is applied to the processing chamber 201 to remove any remaining gases (purge). At this time, valve 245d can be opened to supply inactive gas to the processing chamber 201. When inactive gas is supplied to the processing chamber 201, it acts as a purging gas.

[0142] For example, a silane-based gas containing silicon (Si), which is the main element constituting the film formed on the wafer 200, can be used as the feed gas. For example, a gas containing Si and a halogen element, i.e., a halosilane-based gas, can be used as the silane-based gas. Halogen elements include chlorine (Cl), fluorine (F), bromine (Br), iodine (I), etc. For example, the aforementioned chlorosilane-based gas containing Si and Cl can be used as the halosilane-based gas.

[0143] As feedstock gases, chlorosilane-based gases such as monochlorosilane (SiH3Cl, abbreviated as MCS), dichlorosilane (SiH2Cl2, abbreviated as DCS), trichlorosilane (SiHCl3, abbreviated as TCS), tetrachlorosilane (SiCl4, abbreviated as STC), hexachlorosilane (Si2Cl6, abbreviated as HCDS), and octachlorotrisilane (Si3Cl8, abbreviated as OCTS) can be used. One or more of these can be used as feedstock gases.

[0144] In addition to chlorosilane-based gases, other gaseous raw materials include fluorosilane-based gases such as silicon tetrafluoride (SiF4) and silicon difluoride (SiH2F2), bromosilane-based gases such as tetrabromosilane (SiBr4) and dibromosilane (SiH2Br2), and iodosilane-based gases such as tetraiodosilane (SiI4) and diiodosilane (SiH2I2). One or more of these gases may be used as raw material gases.

[0145] In addition to the above, gases containing Si and amino groups, i.e., aminosilane-based gases, can be used as feedstock gases. An amino group is a monovalent functional group obtained by removing hydrogen (H) from ammonia, primary amines, or secondary amines, and can be represented as -NH2, -NHR, or -NR2. It should be noted that R represents an alkyl group, and the two Rs in -NR2 can be the same or different.

[0146] As feedstock gases, aminosilane-based gases such as tetra(dimethylamino)silane (Si[N(CH3)2]4, abbreviated as 4DMAS), tri(dimethylamino)silane (Si[N(CH3)2]3H, abbreviated as 3DMAS), bis(diethylamino)silane (Si[N(C2H5)2]2H2, abbreviated as BDEAS), bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, abbreviated as BTBAS), and diisopropylaminosilane (SiH3[N(C3H7)2], abbreviated as DIPAS) can also be used. One or more of the above-mentioned gases can be used as feedstock gases.

[0147] [Step c2]

[0148] After step c1 is completed, a reaction gas as the second gas is supplied to the wafer 200 in the processing chamber 201, that is, the Si-containing layer formed on the wafer 200.

[0149] Specifically, valve 244d is opened, allowing reactive gas to flow into gas supply pipe 244a. The reactive gas, with flow regulation by MFC 244c, is supplied to processing chamber 201 via common gas supply pipe 242, gas supply pipe 241, cluster head buffer chamber 232, and gas supply section 234 (through hole 234b), and is exhausted through exhaust pipe 262. At this time, reactive gas is supplied to wafer 200 (reactive gas supply). Alternatively, valves 246d and 247d can be opened, supplying inactive gas into processing chamber 201 through gas supply pipes 246a and 247a respectively. It should be noted that, at this time, the reactive gas can be excited into a plasma state by RPU 244e for supply. In this case, the reaction gas excited into a plasma state by RPU244e is supplied to the wafer 200 in the processing chamber 201 via the common gas supply pipe 242, gas supply pipe 241, cluster head buffer chamber 232, and gas supply section 234 (through hole 234b).

[0150] As an example of the processing condition in step c2, the following is an example:

[0151] Processing temperature: 50–1000℃, preferably 300–800℃

[0152] Processing pressure: 10–3000 Pa, preferably 20–1000 Pa

[0153] The flow rate of the reactant gas supply is 0.0001–100 slm, preferably 0.001–10 slm.

[0154] The reaction gas supply time is 0.1 to 120 seconds, preferably 1 to 60 seconds, and more preferably 1 to 30 seconds.

[0155] High-frequency power (plasma power): 10-1000W

[0156] High frequency: 400kHz~60MHz

[0157] Other processing conditions can be the same as those in step c1. It should be noted that the high-frequency power and high-frequency frequency refer to the conditions used to generate plasma when the reactant gas is excited into a plasma state by the RPU244e.

[0158] Under the aforementioned processing conditions, a gas containing, for example, nitrogen (N) and hydrogen (H) is supplied to the wafer 200 as a reaction gas, thereby nitriding (modifying) at least a portion of the Si-containing layer formed on the wafer 200. As a result, a silicon nitride layer (SiN layer) containing Si and N is formed on the outermost surface of the wafer 200, which serves as the substrate. During the formation of the SiN layer, impurities such as Cl contained in the Si-containing layer are converted into a gaseous substance containing at least Cl during the modification reaction of the Si-containing layer using a gas containing N and H, and are discharged from the processing chamber 201. Thus, the SiN layer becomes a layer with fewer impurities such as Cl compared to the Si-containing layer formed in step c1.

[0159] After the SiN layer is formed, valve 244d is closed to stop the supply of reaction gas to the processing chamber 201. Then, the gas and other gases remaining in the processing chamber 201 are removed from the processing chamber 201 through the same processing steps as in step c1 (purging).

[0160] For example, a nitriding gas (nitriding agent, nitrogen source) can be used as the reactant gas. Gases containing N and H, such as those described above, can be used as the nitriding gas. The gas containing N and H can be either an N-containing gas or an H-containing gas. Preferably, the gas containing N and H has N-H bonds.

[0161] Hydrogen nitride gases such as ammonia (NH3), diazepines (N2H2), hydrazine (N2H4), and N3H8 can be used as reactants. One or more of these gases can be used as reactants.

[0162] In addition to those mentioned above, gases containing nitrogen (N), carbon (C), and hydrogen (H) can also be used as reactant gases. For example, amine gases and organohydrazine gases can be used as gases containing N, C, and H. The gas containing N, C, and H can be a nitrogen-containing gas, a carbon-containing gas, or a hydrogen-containing gas. Furthermore, the gas containing N, C, and H can be a gas containing N and C, a gas containing N and H, or a gas containing C and H.

[0163] For example, ethylamine gases such as monoethylamine (C2H5NH2, abbreviated as MEA), diethylamine ((C2H5)2NH, abbreviated as DEA), and triethylamine ((C2H5)3N, abbreviated as TEA) can be used as reactants; methylamine gases such as monomethylamine (CH3NH2, abbreviated as MMA), dimethylamine ((CH3)2NH, abbreviated as DMA), and trimethylamine ((CH3)3N, abbreviated as TMA) can be used; and organohydrazine gases such as monomethylhydrazine ((CH3)HN2H2, abbreviated as MMH), dimethylhydrazine ((CH3)2N2H2, abbreviated as DMH), and trimethylhydrazine ((CH3)2N2(CH3)H, abbreviated as TMH) can be used as reactants. One or more of the above can be used as reactants.

[0164] [Perform the prescribed number of cycles]

[0165] By performing the above steps c1 and c2 asynchronously a predetermined number of times (m times, where m is an integer greater than or equal to 1), a SiN film of a predetermined thickness can be formed on the surface of the wafer 200 as a substrate. It is preferable to repeat the above cycle multiple times. That is, it is preferable to repeat the above cycle multiple times, ensuring that the thickness of the SiN layer formed in each cycle is less than the desired film thickness, until the thickness of the SiN film formed by stacking the SiN layers reaches the desired thickness. It should be noted that when a gas containing N, C, and H is used as the reactant gas, a silicon carbonitride layer (SiCN layer) can be formed through the above cycle. By performing the above cycle a predetermined number of times, a silicon carbonitride film (SiCN film) can be formed as a film on the surface of the wafer 200.

[0166] (Post-purge)

[0167] After the process of forming a SiN film of the desired thickness on the wafer 200 is completed, inert gases are supplied as purge gases into the processing chamber 201 from gas supply pipes 246a, 247a, and 245a, and exhaust gases are discharged from the exhaust pipe 262. This purges the processing chamber 201, removing residual gases and reaction byproducts (post-purge). Subsequently, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement).

[0168] (Substrate cooling process: step h)

[0169] Subsequently, the third gas is supplied from the third gas supply system 258 into the buffer space 233.

[0170] Specifically, valve 258d is opened, allowing the third gas to flow into the gas supply pipe 258a. The flow rate of the third gas is regulated by MFC 258c and supplied to the buffer space 233, and then supplied to the processed wafer 200 via the through hole 234a and the processing chamber 201.

[0171] As an example of a processing condition in step h, the following is an example:

[0172] Processing temperature: 50–650℃, preferably 20–300℃

[0173] Processing pressure: 10–13333 Pa, preferably 100–10000 Pa

[0174] The third gas supply flow rate is 0.0001–100 slm, preferably 0.001–10 slm.

[0175] The third gas supply time is 0.1–300 seconds, preferably 1–60 seconds.

[0176] Under the aforementioned processing conditions, a third gas is supplied to the processed wafer 200, thereby enabling the processed wafer 200 to be cooled within the processing container 202, i.e., the processing chamber 201.

[0177] It should be noted that in step h, the substrate stage 212 may be lowered to place the processed wafer 200 on the lifting pin 207, and the processed wafer 200 may be cooled while separated from the substrate stage 212. For example, in step h, the processed wafer 200 may be cooled while the substrate stage 212 is lowered to the wafer transport position. Furthermore, for example, in step h, the processed wafer 200 may be cooled while the substrate stage 212 is positioned between the wafer processing position and the wafer transport position, and is maintained in a position that allows the processed wafer 200 to be separated from the substrate stage 212. In these cases, by separating the processed wafer 200 from the substrate stage 212, heat conduction from the substrate stage 212 heated by the heater 213 to the processed wafer 200 can be interrupted, further improving the cooling efficiency of the wafer 200.

[0178] (Substrate removal process)

[0179] Subsequently, the substrate stage 212 is lowered to the wafer transfer position, and the processed wafer 200 is transferred from the substrate stage 212 to the lifting pin 207, thus placing the processed wafer 200 on the lifting pin 207. This allows the processed wafer 200 to be held on the lifting pin 207 within the transfer space 203. It should be noted that in step h, this operation is performed while the substrate stage 212 is lowered to the wafer transfer position. After adjusting the pressure in the processing chamber 201 and the transfer space 203 to a predetermined level, the gate valve 205 is released. Then, within the transfer space 203, the processed wafer 200 placed on the lifting pin 207 is moved out of the transfer space 203 by the transfer mechanism 500. That is, the processed wafer 200 is transferred from the transfer space 203 to the transfer chamber 600 by the transfer mechanism 500.

[0180] (3) The effect of this method

[0181] According to this method, one or more of the following effects can be obtained.

[0182] (a) By performing step d, between steps b and c, a third gas with a temperature lower than that of the heated first gas is supplied to the gas supply section 234, thereby lowering the temperature of the gas supply section 234. This cools the gas supply section 234, which was heated in step b, and prevents the second gas supplied in step c from being overheated by the gas supply section 234. As a result, in step c, changes in the reaction characteristics of the second gas and unexpected decomposition can be suppressed, improving the processing uniformity of each wafer.

[0183] In step b, the wafer 200 is preheated before step c, thereby shortening the time it takes for the wafer 200 to reach the processing temperature in step c. As a result, processing time is shortened, high throughput is achieved, and productivity is improved.

[0184] (b) In step b, the wafer 200 is heated from both sides of the back surface, thereby increasing the heating rate of the wafer 200 and shortening the preheating time of the wafer 200. In addition, by heating the wafer 200 from both sides of the back surface, the temperature difference between the front and back surfaces of the wafer 200 can be reduced, and the warping of the wafer 200 caused by the temperature difference between the front and back surfaces of the wafer 200 can be suppressed.

[0185] In step b, with the wafer 200 held on the lifting pin 207, the wafer 200 is heated from the back side by radiation from the heater 213 provided on the substrate stage 212, radiation from the substrate stage 212 heated by the heater 213, etc., thereby suppressing the rapid temperature rise of the back side of the wafer 200 and reducing the temperature difference between the front and back sides of the wafer 200. This suppresses the warping of the wafer 200 caused by the temperature difference between the front and back sides of the wafer 200, i.e., the temperature on the back side of the wafer 200 being higher than the temperature on the front side.

[0186] By performing step b while the wafer 200 is held on the lifting pin 207, the temperature difference between the front and back sides of the wafer 200 can be reduced, thus suppressing the warping of the wafer 200 caused by the temperature difference. Specifically, in step b, for example, the substrate stage 212 is raised or lowered using the lifting part 218 on the fixed lifting pin 207, thereby adjusting the positional relationship between the wafer 200 and the substrate stage 212 (heater 213) on the lifting pin 207, i.e., the distance between the wafer 200 and the substrate stage 212. This allows for fine temperature adjustment of the back side of the wafer 200, achieving micro-control of temperature uniformity between the front and back sides of the wafer 200.

[0187] (c) By performing step e, the wafer 200 is held in a state on the substrate stage 212 before step c, and the wafer 200 is heated from the back side by heat conduction from the substrate stage 212 heated by the heater 213, thereby enabling direct heating of the wafer 200 and thus further shortening the preheating time.

[0188] (d) In step b, the gas supply section 234 is heated by radiation from the heater 213 provided on the substrate stage 212, radiation from the substrate stage 212 heated by the heater 213, radiation from the heated wafer 200, etc., thereby suppressing the deterioration of the film properties of the film formed on the wafer 200 and the interface properties at the interface between the film and the wafer 200 in step c. Specifically, for example, by heating the wafer 200 in step b, gas (e.g., H2O gas) that escapes from the wafer 200 may sometimes be adsorbed onto the gas supply section 234. In this case, in step c, the gas may escape from the gas supply section 234 and sometimes be supplied to the wafer 200, which may cause the film properties of the film formed on the wafer 200 and the interface properties at the interface between the film and the wafer 200 to deteriorate. It should be noted that, initially in step c, the gas detaching from the gas supply section 234 affects the interfacial properties at the interface between the film formed on the wafer 200 and the wafer 200. After the initial stage of step c, the gas detaching from the gas supply section 234 affects the film properties formed on the wafer 200. In step b, by heating the gas supply section 234 as described above, the adsorption of gas detached from the wafer 200 onto the gas supply section 234 can be suppressed, thereby preventing the deterioration of the aforementioned film and interfacial properties.

[0189] Furthermore, in step b, the gas supply section 234 can be heated using the first gas supplied from the first gas supply system 248 and heated by the heater 248e. Therefore, in step c, the deterioration of the film properties formed on the wafer 200 and the interface properties at the interface between the film and the wafer 200 can be further suppressed. That is, in step b, by heating the gas supply section 234 as described above, the adsorption of gas detached from the wafer 200 onto the gas supply section 234 can be suppressed, thereby suppressing the aforementioned deterioration of the film properties and interface properties.

[0190] (e) By performing step f before step a: heating the gas supply section 234 by radiation from the heater 213 provided on the substrate stage 212, radiation from the substrate stage 212 heated by the heater 213, etc., the gas supply section 234 can be preheated. In the early stage of step b, the wafer 200 is heated, thereby preventing gas detached from the wafer 200 from adsorbing onto the gas supply section 234.

[0191] Furthermore, in step f, the gas supply section 234 can be heated using the first gas supplied from the first gas supply system 248 and heated by the heater 248e, and the gas supply section 234 can be heated using the fourth gas supplied from the fourth gas supply system 259 and heated by the heater 259e. Thus, in the initial stage of step b, the wafer 200 is heated, thereby preventing the gas detached from the wafer 200 from adsorbing onto the gas supply section 234.

[0192] (f) By making the distance (distance A) between the gas supply section 234 and the substrate stage 212 in step f closer (shorter) than the distance (distance B) between the gas supply section 234 and the substrate stage 212 in step c, the heating time of the gas supply section 234 can be shortened. That is, by making distance A shorter than distance B, the heating efficiency of the gas supply section 234 achieved by utilizing radiation from the heater 213 inside the substrate stage 212, radiation from the substrate stage 212 heated by the heater 213, etc., can be improved, and the heating time of the gas supply section 234 can be shortened. It should be noted that in step f, the substrate stage 212 is kept in a state of being heated by the heater 213, so even if the heat of the substrate stage 212 is taken away by the gas supply section 234, the temperature of the substrate stage 212 can be suppressed from changing drastically.

[0193] (g) In step d, a third gas is supplied to the gas supply unit 234 from a third gas supply system 258 that is different from the first gas supply system 248, thereby enabling the unheated third gas to be supplied to the gas supply unit 234 efficiently and shortening the cooling time of the gas supply unit 234.

[0194] (h) In step d, the third gas is supplied to the gas supply unit 234 without passing through the first gas supply system 248, thereby enabling the unheated third gas to be supplied to the gas supply unit 234 efficiently and shortening the cooling time of the gas supply unit 234.

[0195] (i) In step d, by maintaining the temperature of the heater 248e, which was set to a predetermined temperature in step b, it is possible to maintain a stable supply of the heated first gas under the same conditions. Thus, for example, when the wafer 200 is being continuously processed, the heated first gas can be rapidly and stably supplied under the same conditions when needed.

[0196] (j) In step b, the heated first gas supplied to the buffer space 233 is supplied to the wafer 200 via the buffer space 233. In step d, the unheated third gas supplied to the buffer space 233 is not supplied to the wafer 200 but is exhausted from the exhaust pipe 263 provided in the gas supply section 234. Thus, in step d, it is possible to avoid cooling the wafer 200 while cooling the buffer space 233 (gas supply section 234).

[0197] (k) By performing step g between step a and step b: while the wafer 200 is contained in the transfer space 203, a heated fourth gas is supplied to the wafer 200 to heat the wafer 200, thereby advancing the timing of the preheating of the wafer 200 and shortening the heating time of the wafer 200.

[0198] (l) By performing step h after step c: supplying a third gas to the wafer 200 to cool the wafer 200, the wafer 200 after film deposition can be cooled within the processing container 202. This shortens the time it takes for the processed wafer 200 to reach a transferable temperature, allowing it to be quickly removed from the processing container 202 (transfer space 203) after film deposition. It should be noted that in step h, preferably, the substrate stage 212 is lowered, the processed wafer 200 is placed on the lifting pin 207, and the processed wafer 200 is cooled while separated from the substrate stage 212. This further improves the cooling efficiency of the wafer 200.

[0199] (m) Inactive gases are used as the first and third gases, and a processing gas (reactive gas) is used as the second gas. Thus, in step c, unexpected decomposition of the processing gas by the gas supply unit 234 can be suppressed, and the film thickness uniformity of each wafer can be improved.

[0200] (4) Variations

[0201] The configuration of the substrate processing apparatus 100 of this method can be modified as shown in the following variations.

[0202] (Variation Example 1)

[0203] Figure 3 This is a schematic configuration diagram of the main components of the substrate processing apparatus 100 in Modification 1. Unless otherwise specified, the configuration of the substrate processing apparatus 100 in Modification 1 is the same as that of the substrate processing apparatus 100 described above, and the same reference numerals are used to denote the constituent elements with the same functions and configurations, and repeated descriptions are omitted.

[0204] Figure 3The substrate processing apparatus in Modified Example 1 differs from the substrate processing apparatus 100 described above mainly in the following three aspects. In the above-described method, the gas supply pipe 241 is configured such that its top end 241a extends into the cluster head buffer chamber 232, while in Modified Example 1, the gas supply pipe 240 is configured such that its downstream end is connected to the gas guide 237. Furthermore, in the above-described method, multiple through holes 234a are provided adjacent to through holes 234b, while in Modified Example 1, multiple through holes 234h are provided circumferentially on the structure 235 disposed on the lower wall 234i of the gas supply section 234. Furthermore, in the above-described method, the gas supply pipe 236 is configured such that its downstream end is connected to a gas inlet hole provided on the upper wall 234e of the gas supply section 234, while in Modified Example 1, the gas supply pipe 238 is configured such that its downstream end is connected to the structure 235.

[0205] Specifically, such as Figure 3 As shown, a gas guide 237 is connected to the downstream end of the gas supply pipe 240 in Modified Example 1. The gas guide 237 guides the second gas supplied from the gas supply pipe 240 into the through hole 234b. Thus, the gas supply pipe 240 is connected to the through hole 234b via the gas guide 237. The second gas supplied from the gas supply pipe 240 is supplied into the through hole 234b via the gas guide 237, and is supplied to the wafer 200 through the through hole 234b.

[0206] In addition, such as Figure 3 As shown, a structure 235 is connected to the downstream end of the gas supply pipe 238. The structure 235 supplies the first gas (heating gas) supplied from the gas supply pipe 238 into the through-hole 234h, without releasing it into the buffer space 233. Thus, the gas supply pipe 238 is connected to the through-hole 234h via the structure 235. The first gas (heating gas) supplied from the gas supply pipe 238 is supplied into the through-hole 234h via the structure 235, and then supplied to the wafer 200 through the through-hole 234h.

[0207] Thus, by separating the supply path of the second gas from the supply path of the heated first gas, it is possible to prevent the heated first gas from heating the supply path of the second gas. This reduces the processing time of step d.

[0208] Furthermore, the through holes 234h are simply multiple through holes arranged in a circumferential shape on the structure 235 disposed on the lower wall 234i of the gas supply section 234, and the number of through holes 234h provided on the center side and the outer peripheral side of the wafer 200 differs. Specifically, the number of through holes 234h provided on the outer peripheral side of the wafer 200 is greater than the number of through holes 234h provided on the center side of the wafer 200. With this configuration, more heated first gas is supplied to the outer peripheral side compared to the center side of the wafer 200. In addition, the first gas (heated gas) supplied to the outer peripheral side of the wafer 200 may sometimes reach the center side of the wafer 200 after diffusion, and the temperature of the first gas supplied to the outer peripheral side of the wafer 200 is more likely to become higher than the temperature of the first gas supplied to the center side of the wafer 200. Generally, in the substrate mounting stage 212, due to heat conduction, the temperature on the outer periphery of the substrate mounting stage 212 tends to be lower than the temperature on the center side of the stage 212. If the wafer 200 is heated under these conditions, a temperature difference will occur between the center and the outer periphery of the wafer 200, potentially causing the wafer 200 to warp. However, since the temperature of the first gas supplied to the outer periphery of the wafer 200 is higher than the temperature of the first gas supplied to the center of the wafer 200, the temperature within the wafer surface can be made uniform, preventing the wafer 200 from warping. It should be noted that the through-holes 234h can be provided on the center side relative to the wafer 200. The above-mentioned effect can be obtained if the number of through-holes 234h on the outer periphery of the wafer 200 is greater than the number of through-holes 234h on the center side. Furthermore, the above-mentioned effect can also be obtained if the size of the through-holes 234h on the outer periphery of the wafer 200 is larger than the size of the through-holes 234h on the center side relative to the wafer 200.

[0209] In this variation, it goes without saying that the same effect as the above method can be achieved.

[0210] <Other ways of disclosing this information>

[0211] The above details the manner in which this disclosure is made. However, this disclosure is not limited to the manner described above and may be modified in various ways without departing from its essence.

[0212] The above description illustrates an example where the third gas supply system 258 is completely independent of the first gas supply system 248, supplying the third gas to the gas supply unit 234 without passing through the first gas supply system 248. However, this disclosure is not limited to this. For example, as... Figure 4As shown, the third gas supply system 260 can be connected to the gas supply pipe 236 (the first gas supply system 248), and the third gas can be supplied from the third gas supply system 260 to the gas supply unit 234 via the first gas supply pipe. In this case, at least some of the effects described above can be achieved.

[0213] In the above-described method, there are no specific limitations on the types of the first and third gases, allowing for various processing methods. For example, the first and third gases can be the same gas, meaning they can be of the same type. That is, the first and third gases can be gases with the same molecular structure. For example, when using inert gases as the first and third gases, the same inert gas can be used, meaning inert gases with the same molecular structure. This facilitates gas replacement within the processing container 202, increasing throughput. Furthermore, the first and third gases can be different gases, meaning they can be different types, meaning they can be gases with different molecular structures. For example, when using inert gases as the first and third gases, different inert gases can be used, meaning inert gases with different molecular structures. This allows for the selection of appropriate gases as the first and third gases based on the objective, increasing the degree of freedom in each step of the process.

[0214] In the above description, the case where an inert gas is used as the first gas has been explained. It was explained that in this case, rare gases such as N2, Ar, He, Ne, and Xe can be used as the inert gas. Furthermore, it was explained that H2 gas can be used as the first gas.

[0215] Preferably, the first gas is at least one of N2, H2, and He. These gases have relatively high thermal conductivity. By using such a high-thermal-conductivity gas as the first gas, the heating time of the wafer 200 in steps g, b, and e can be shortened, i.e., the temperature rise time can be shortened, thereby achieving a more uniform in-plane temperature distribution of the wafer 200 in a shorter time. It should be noted that the thermal conductivity of the gases decreases in the order of H2, He, and N2 (H2 has the highest thermal conductivity), with H2 and He having significantly higher thermal conductivity than N2. Therefore, considering thermal conductivity, at least one of H2 and He is more preferably used as the first gas. Using at least one of H2 and He as the first gas shortens the temperature rise time of the wafer 200 in steps g, b, and e compared to using N2, resulting in a more uniform in-plane temperature distribution of the wafer 200 in a shorter time.

[0216] Furthermore, by using a reducing gas such as H2 as the first gas, steps g, b, and e not only shorten the heating time of the wafer 200, but also effectively remove the natural oxide film formed on the surface of the wafer 200, as well as impurities such as organic matter present on the surface of the wafer 200. In other words, by using a reducing gas such as H2 as the first gas, the wafer 200 before film formation can be pre-treated (pre-trimmed), i.e., pre-cleaned. This improves the interfacial characteristics at the interface between the film formed on the wafer 200 and the wafer 200, resulting in improved electrical characteristics. Moreover, in step f, by supplying a reducing gas such as H2 to the processing chamber 201 via the buffer space 233 as the first gas, contaminants such as organic matter adhering to the buffer space 233 and the processing chamber 201 can be removed, and the buffer space 233 and the processing chamber 201 can be cleaned. It should be noted that, in the case of these treatments, reducing gases such as H2 can be activated, for example, excited into a plasma state for supply, which can improve the effectiveness of the above-mentioned treatments.

[0217] Furthermore, the above method describes the use of an inert gas as the third gas. It explains that in this case, rare gases such as N₂, Ar, He, Ne, and Xe can be used as the inert gas. It also explains that H₂ can be used as the third gas.

[0218] The third gas is preferably at least one of N2, H2, and He. These gases have relatively high thermal conductivity, and by using such a high-thermal-conductivity gas as the third gas, the cooling time of the gas supply section 234 in step d can be shortened. Furthermore, the cooling time of the wafer 200 in step h can be shortened. It should be noted that, considering thermal conductivity, at least one of H2 and He is more preferably used as the third gas. Using at least one of H2 and He as the third gas shortens the cooling time of the gas supply section 234 in step d compared to using N2. Moreover, using at least one of H2 and He as the third gas shortens the cooling time of the wafer 200 in step h compared to using N2.

[0219] Furthermore, by using a reducing gas such as H2 as the third gas, not only is the cooling time of the wafer 200 reduced in step h, but residual impurities such as those remaining on the surface of the film formed on the wafer 200 can also be effectively removed. In other words, by using a reducing gas such as H2 as the third gas, the wafer 200 after film formation can be post-processed (post-trimmed). This improves the film properties of the film formed on the wafer 200, and consequently, also improves the electrical properties. It should be noted that in this case, the reducing gas such as H2 can be activated, for example, excited into a plasma state for supply, which can further enhance the effects of the aforementioned processes.

[0220] Furthermore, the above method describes the use of an inert gas as the fourth gas. It was explained that in this case, rare gases such as N₂, Ar, He, Ne, and Xe can be used as the inert gas. Additionally, it was explained that H₂ can be used as the fourth gas.

[0221] The fourth gas is preferably at least one of N2, H2, and He. These gases have relatively high thermal conductivity. By using such a high-thermal-conductivity gas as the fourth gas, the heating time of the wafer 200 in steps g, b, and e can be shortened, i.e., the temperature rise time can be shortened, thereby achieving a more uniform in-plane temperature distribution of the wafer 200 in a shorter time. It should be noted that, considering thermal conductivity, at least one of H2 and He is more preferably used as the fourth gas. When at least one of H2 and He is used as the fourth gas, compared to using N2 as the fourth gas, the temperature rise time of the wafer 200 in steps g, b, and e can be shortened, and a more uniform in-plane temperature distribution of the wafer 200 can be achieved in a shorter time.

[0222] Furthermore, by using a reducing gas such as H2 as the fourth gas, the heating time of the wafer 200 can be shortened in steps g, b, and e, and impurities such as the natural oxide film formed on the surface of the wafer 200 and organic matter present on the surface of the wafer 200 can be effectively removed. That is, by using a reducing gas such as H2 as the fourth gas, the wafer 200 before film formation can be pre-treated (pre-trimmed), i.e., pre-cleaned. As a result, the interfacial characteristics at the interface between the film formed on the wafer 200 and the wafer 200 can be improved, and consequently, the electrical characteristics can also be improved. Moreover, in step f, by supplying a reducing gas such as H2 as the fourth gas into the processing chamber 201 through the buffer space 233, contaminants such as organic matter attached to the buffer space 233 and the processing chamber 201 can be removed, and the buffer space 233 and the processing chamber 201 can also be cleaned. It should be noted that, in the case of these treatments, reducing gases such as H2 can be activated, for example, excited into a plasma state for supply, which can improve the effectiveness of the above-mentioned treatments.

[0223] The above description illustrates an example where multiple through holes 234a and 234b are provided, but this disclosure is not limited to this. For example, each of the through holes 234a and 234b may be provided as one. In this case, at least some of the effects described above can still be achieved.

[0224] Furthermore, the above-described method illustrates an example where silane-based gases are primarily used as feedstock gases, but this disclosure is not limited thereto. For example, a raw material gas containing metallic elements such as aluminum (Al), titanium (Ti), hafnium (Hf), zirconium (Zr), tantalum (Ta), molybdenum (Mo), and tungsten (W) can be used as the raw material gas. Following the film formation sequence described above, films containing the following metallic elements can be formed on the substrate: aluminum nitride film (AlN film), titanium nitride film (TiN film), hafnium nitride film (HfN film), zirconium nitride film (ZrN film), tantalum nitride film (TaN film), molybdenum nitride film (MoN), tungsten nitride film (WN), aluminum oxide film (AlO film), titanium oxide film (TiO film), hafnium oxide film (HfO film), zirconium oxide film (ZrO film), tantalum oxide film (TaO film), molybdenum oxide film (MoO), tungsten oxide film (WO), titanium oxynitride film (TiON film), titanium aluminum carbonitride film (TiAlCN film), titanium aluminum carbide film (TiAlC film), and titanium carbonitride film (TiCN film). In this case, at least some of the effects described above can be achieved.

[0225] Furthermore, the above-described method illustrates an example of using a nitriding gas as the reactant gas to form a silicon nitride film, but this disclosure is not limited to this. For example, an O-containing gas such as O2 or a C-containing gas such as propylene (C3H6) can be used as the reactant gas to form a Si-containing film such as a silicon oxide film (SiO film), a silicon carbide film (SiC film), or a silicon carbide oxide film (SiOC film) on a substrate through the above-described film formation sequence. In this case, at least some of the effects described above can also be achieved.

[0226] The above method illustrates an example where the temperature of the gas supply unit 234 is adjusted by pre-setting processing conditions, including gas supply flow rate, supply time, and temperature, without measuring the temperature of the gas supply unit 234. However, this disclosure is not limited to this. For example, as... Figure 1 As shown, a thermocouple 290 can be embedded in the gas supply section 234, and the temperature of the gas supply section 234 can be measured by a temperature measuring unit 291 connected to the thermocouple 290. This configuration allows for the measurement of the temperature of the gas supply section 234 and feedback control of each component based on the measured temperature data. Through this feedback control, the temperature of the gas supply section 234 can be precisely controlled. Furthermore, this control can suppress situations where the temperature settling time becomes excessive due to overheating of the gas supply section 234.

[0227] The above description illustrates that the buffer space 233 can be supplied with one or more of the following: a heated inert gas, a reducing gas, and a gas with high thermal conductivity; however, this disclosure is not limited to these. For example, as... Figure 5 As shown, the gas supply pipe 236 can be connected to the common gas supply pipe 242. This configuration achieves at least some of the effects described above. Furthermore, it simplifies the structure of the substrate processing apparatus, simplifies maintenance, and consequently reduces apparatus costs.

[0228] The above description illustrates the film-forming process, but this disclosure is not limited to this. For example, a portion of the above method can also be applied when cleaning the processing container 202. During cleaning, it is not necessary to place the product wafer 200 into the processing container 202; steps g, b, and d can be performed before cleaning, and step h can be performed after cleaning. It should be noted that during cleaning, a gas containing fluorine (F2) can be supplied from the gas supply pipe 245a as a cleaning gas. In this case, at least some of the effects described above can be achieved. It should be noted that step d, performed before cleaning, can also suppress corrosion and cleaning damage to the gas supply section 234. Furthermore, step h, performed after cleaning, can remove residual fluorine from the processing container 202.

[0229] <Preferred method of this disclosure>

[0230] The following are preferred methods of describing the contents of this disclosure.

[0231] (Postscript 1)

[0232] Methods for manufacturing semiconductor devices or methods for processing substrates include:

[0233] (a) The process of transferring a substrate into a processing container;

[0234] (b) A process of heating the substrate by supplying the substrate with a first gas that has been heated by passing through a first heating section provided in a first gas supply line via a gas supply section;

[0235] (c) A process of supplying a second gas to the substrate placed on the substrate mounting section within the processing container via the gas supply section, wherein the second gas is a gas flowing through a second gas supply line different from the first gas supply line.

[0236] (d) Between (b) and (c), a process of supplying a third gas with a temperature lower than that of the first gas to the gas supply unit, thereby reducing the temperature of the gas supply unit.

[0237] (Postscript 2)

[0238] In the method described in Appendix 1, wherein,

[0239] In (b), the substrate is not placed on the substrate mounting portion but is held in a floating state, and the substrate is heated from the back side by a second heating portion provided on the substrate mounting portion.

[0240] (Note 3)

[0241] In the method described in Appendix 1 or 2, the following steps are also included:

[0242] (e) Prior to (c), the substrate is held in a state on the substrate mounting portion, and the substrate is heated from the back side by heat conduction from the substrate mounting portion heated by the second heating portion.

[0243] (Postscript 4)

[0244] In any one of the methods described in Appendices 1 to 3, wherein,

[0245] In (b), the gas supply section is heated by the second heating section provided in the substrate mounting section.

[0246] (Note 5)

[0247] In any one of the methods described in Appendices 1 to 4, the method further comprises the following steps:

[0248] (f) Prior to (a), the gas supply section is heated by the second heating section provided in the substrate mounting section.

[0249] (Note 6)

[0250] In the method described in Appendix 5, wherein,

[0251] The distance between the gas supply section and the substrate mounting section in (f) is closer (shorter) than the distance between the gas supply section and the substrate mounting section in (c).

[0252] (Note 7)

[0253] In any one of the methods described in Appendices 1 to 6, wherein,

[0254] In (d), the third gas is supplied to the gas supply unit from a third gas supply line different from the first gas supply line.

[0255] (Postscript 8)

[0256] In any one of the methods described in Appendix 1 to 7, wherein,

[0257] In (d), the third gas is supplied from the third gas supply line to the gas supply unit via the first gas supply line.

[0258] (Note 9)

[0259] In any one of the methods described in Appendices 1 to 8, wherein,

[0260] In (d), the third gas is supplied to the gas supply unit from the third gas supply line without passing through the first gas supply line.

[0261] (Postscript 10)

[0262] In any one of the methods described in Appendices 1 to 9, wherein,

[0263] In (d), the temperature state of the first heating element, which was set to a predetermined temperature in (b), is maintained.

[0264] (Postscript 11)

[0265] In any one of the methods described in Appendices 1 to 10, wherein,

[0266] In (b), the first gas, which is supplied to a buffer space located in the gas supply section, is supplied to the substrate via the buffer space.

[0267] In (d), the third gas supplied to the buffer space is not supplied to the substrate but is exhausted from the exhaust section provided in the gas supply section.

[0268] (Postscript 12)

[0269] In any one of the methods described in Appendices 1 to 11, wherein,

[0270] In (b), the first gas is supplied to the substrate via a first gas supply port located in the gas supply section and connected to the first gas supply pipeline.

[0271] In (c), the second gas is supplied to the substrate via a second gas supply port provided in the gas supply section and connected to the second gas supply pipeline.

[0272] (Postscript 13)

[0273] In any one of the methods described in Appendices 1 to 12, the method further comprises the following steps:

[0274] (g) Between (a) and (b), with the substrate contained in the transfer chamber provided in the processing container, a fourth gas that is heated by passing through the fourth heating section provided in the fourth gas supply line is supplied to the substrate to heat the substrate.

[0275] (Postscript 14)

[0276] In any one of the methods described in Appendices 1 to 13, the method further comprises the following steps:

[0277] (h) After (c), the third gas is supplied to the substrate to cool the substrate.

[0278] (Postscript 15)

[0279] In any one of the methods described in Appendices 1 to 14, wherein,

[0280] The gas supply section is configured to face the upper surface of the substrate.

[0281] In (b), the temperature of the first gas supplied to the outer periphery of the substrate is higher than the temperature of the first gas supplied to the center of the substrate.

[0282] (Postscript 16)

[0283] In any one of the methods described in Appendices 1 to 15, wherein,

[0284] The gas supply section is provided with a supply port through which the first gas passes and is supplied to the substrate.

[0285] In (b), the first gas is supplied to the substrate via the gas supply section configured in a manner different from at least one of the number and size of the supply ports on the central and peripheral sides relative to the substrate.

[0286] (Postscript 17)

[0287] In any one of the methods described in Appendices 1 to 16, wherein,

[0288] In (b), at least one of N2 gas, H2 gas, and He gas is used as the first gas.

[0289] (Postscript 18)

[0290] In any one of the methods described in Appendices 14 to 17, wherein,

[0291] In (h), at least one of N2 gas, H2 gas, He gas, diluted H2 gas, and activated H2 gas is used as the third gas.

[0292] (Postscript 19)

[0293] In any one of the methods described in Appendices 1 to 18, wherein,

[0294] The first and third gases are inactive gases, and the second gas is a processing gas (reactive gas).

[0295] (Postscript 20)

[0296] In any one of the methods described in Appendices 1 to 19, wherein,

[0297] The first gas and the third gas are the same gas (gas of the same type and with the same molecular structure).

[0298] (Postscript 21)

[0299] According to another aspect of this disclosure, a substrate processing apparatus is provided, comprising:

[0300] A processing container for housing substrates;

[0301] A conveying mechanism for transporting the substrate into the processing container;

[0302] A substrate mounting section that holds the substrate within the processing container;

[0303] A gas supply unit that supplies gas to the substrate within the processing container;

[0304] A first gas supply line having a first heating section and supplying a first gas via the gas supply section;

[0305] A second gas supply pipeline that supplies the second gas via the gas supply unit;

[0306] A third gas supply pipeline that supplies the third gas to the gas supply unit; and

[0307] The control unit is configured to control the conveying mechanism, the first gas supply line, the second gas supply line and the third gas supply line to perform the processes (steps) described in Appendix 1 within the processing container.

[0308] (Postscript 22)

[0309] According to another aspect of this disclosure, a program or a computer-readable recording medium containing the program is provided, the program causing the substrate processing apparatus to perform the steps (processes) of Appendix 1 via a computer.

Claims

1. A substrate processing method comprising: (a) a process of carrying a substrate into a processing chamber of a processing vessel; (b) a process of supplying a first gas, which is heated by passing through a first heating section provided in a first gas supply line, to the substrate via a gas supply section, and heating the substrate; (c) a process of supplying a second gas, which is a gas flowing through a second gas supply line different from the first gas supply line, to the substrate placed on a substrate placing section in the processing chamber via a buffer chamber provided above the gas supply section; (d) a process of supplying a third gas, which is lower in temperature than the first gas, to a buffer space provided in the gas supply section and communicating with the processing chamber, and lowering the temperature of the buffer space, between (b) and (c).

2. The substrate processing method according to claim 1, wherein in (b), the substrate is not placed on the substrate placing section but is held in a floating state, and the substrate is heated from a back surface side by a second heating section provided in the substrate placing section.

3. The substrate processing method according to claim 1, wherein Further comprising a process of: (e) before (c), holding the substrate in a state of being placed on the substrate placing section, and heating the substrate from a back surface side by heat conduction from the substrate placing section heated by a second heating section provided in the substrate placing section.

4. The substrate processing method according to claim 1, wherein in (b), the gas supply section is heated by a second heating section provided in the substrate placing section.

5. The substrate processing method according to claim 1, wherein Further comprising a process of: (f) before (a), heating the gas supply section by a second heating section provided in the substrate placing section.

6. The substrate processing method according to claim 5, wherein the distance between the gas supply section and the substrate placing section in (f) is closer than the distance between the gas supply section and the substrate placing section in (c).

7. The substrate processing method according to claim 1, wherein in (d), the third gas is supplied to the gas supply section from a third gas supply line different from the first gas supply line.

8. The substrate processing method according to claim 1, wherein in (d), the third gas is supplied to the gas supply section from a third gas supply line different from the first gas supply line via the first gas supply line.

9. The substrate processing method according to claim 1, wherein in (d), the third gas is supplied to the gas supply section from a third gas supply line different from the first gas supply line without passing through the first gas supply line.

10. The substrate processing method according to claim 1, wherein in (d), the temperature state of the first heating section set to a prescribed temperature in (b) is maintained.

11. The substrate processing method according to claim 1, wherein in (b), the first gas is supplied to the substrate via the buffer space, and the buffer space and the substrate are heated.

12. The substrate processing method according to claim 1, wherein In (d), the third gas supplied into the buffer space is not supplied to the substrate and is exhausted from the gas supply part.

13. The substrate processing method according to claim 1, wherein In (b), the first gas is supplied to the substrate via a first gas supply port provided in the gas supply part and communicating with the first gas supply line. In (c), the second gas is supplied to the substrate via a second gas supply port provided in the gas supply part and communicating with the second gas supply line.

14. The substrate processing method according to claim 1, wherein, Further comprising the following process: (g) between (a) and (b), the substrate is heated by supplying a fourth gas, which is heated by passing through a fourth heating part provided in a fourth gas supply line, to the substrate while the substrate is housed in a transfer chamber provided in the processing container.

15. The substrate processing method according to claim 1, wherein, Further comprising the following process: (h) after (c), the substrate is cooled by supplying the third gas to the substrate.

16. The substrate processing method according to claim 1, wherein The gas supply part is configured in opposition to an upper surface of the substrate, In (b), the temperature of the first gas supplied to the peripheral side of the substrate is higher than the temperature of the first gas supplied to the central side of the substrate.

17. The substrate processing method according to claim 1, wherein A supply port through which the first gas passes and is supplied to the substrate is provided in the gas supply part, In (b), the first gas is supplied to the substrate via the gas supply part configured in such a manner that at least either the number or the size of the supply ports differs with respect to the central side and the peripheral side of the substrate.

18. The substrate processing method according to claim 1, wherein In (b), at least either of N2 gas, H2 gas, and He gas is used as the first gas.

19. The substrate processing method according to claim 15, wherein In (h), at least either of N2 gas, H2 gas, He gas, diluted H2 gas, and activated H2 gas is used as the third gas.

20. The substrate processing method according to claim 1, wherein Non-active gas is used as the first gas and the third gas, and processing gas is used as the second gas.

21. The substrate processing method according to claim 1, wherein The first gas and the third gas are the same gas.

22. A substrate processing apparatus comprising: a processing container that houses a substrate; a conveyance mechanism that conveys the substrate into the processing container; a substrate placement part that places the substrate in the processing container; a gas supply part that supplies a gas to the substrate in the processing container; a first gas supply line that has a first heating part and supplies a first gas via the gas supply part; a second gas supply line that supplies a second gas via the gas supply part; a third gas supply line that supplies a third gas to the gas supply part; and a fourth gas supply line that supplies a fourth gas to the gas supply part. a control unit configured to control the conveyance mechanism, the first gas supply line, the second gas supply line, and the third gas supply line to perform, in the processing vessel, processing of: (a) conveying a substrate into a processing chamber of a processing vessel; (b) supplying, to the substrate via a gas supply unit, a first gas that has passed through a first heating unit provided in the first gas supply line and has been heated, to heat the substrate; (c) supplying, to the substrate that is placed on a substrate placement unit in the processing chamber via a buffer chamber provided above the gas supply unit, a second gas that flows through a second gas supply line different from the first gas supply line, to the substrate; (d) between (b) and (c), supplying, to a buffer space provided in the gas supply unit and communicating with the processing chamber, a third gas having a lower temperature than the first gas, to lower the temperature of the buffer space.

23. A substrate processing apparatus comprising: a processing chamber provided in a processing vessel that accommodates a substrate; a conveyance mechanism that conveys the substrate into the processing chamber; a substrate placement unit that places the substrate in the processing chamber; a gas supply unit that supplies a gas to the substrate in the processing chamber; a first gas supply line having a first heating unit and supplying a heated first gas via the gas supply unit; a second gas supply line that supplies a second gas via a buffer chamber provided above the gas supply unit; a third gas supply line that supplies a third gas having a lower temperature than the first gas to a buffer space provided in the gas supply unit and communicating with the processing chamber; a first gas supply port provided in the gas supply unit and communicating with the first gas supply line; and a second gas supply port provided in the gas supply unit and communicating with the second gas supply line.

24. A recording medium recording a program for causing a substrate processing apparatus to execute the following steps by a computer: (a) a step of conveying a substrate into a processing chamber of a processing vessel; (b) a step of supplying, to the substrate via a gas supply unit, a first gas that has passed through a first heating unit provided in a first gas supply line and has been heated, to heat the substrate; (c) a step of supplying, to the substrate that is placed on a substrate placement unit in the processing chamber via a buffer chamber provided above the gas supply unit, a second gas that flows through a second gas supply line different from the first gas supply line, to the substrate; (d) a step of, between (b) and (c), supplying, to a buffer space provided in the gas supply unit and communicating with the processing chamber, a third gas having a lower temperature than the first gas, to lower the temperature of the buffer space.

25. A method of manufacturing a semiconductor device, comprising: (a) a process of conveying a substrate into a processing chamber of a processing vessel; (b) a process of supplying, to the substrate via a gas supply unit, a first gas that has passed through a first heating unit provided in a first gas supply line and has been heated, to heat the substrate; (c) a step of supplying a second gas to the substrate placed on a substrate placing portion in the processing chamber via a buffer chamber provided above the gas supply portion, the second gas being a gas flowing through a second gas supply line different from the first gas supply line; (d) a step of supplying a third gas lower in temperature than the first gas to a buffer space provided in the gas supply portion and communicating with the processing chamber, to lower the temperature of the buffer space, between (b) and (c).

Images